A non-destructive measurement method of response time of MEMS infrared detector

CN121163687BActive Publication Date: 2026-07-21ZHONGBEI UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ZHONGBEI UNIV
Filing Date
2025-09-09
Publication Date
2026-07-21

AI Technical Summary

Technical Problem

Existing MEMS infrared detector response time testing requires opening the cap to measure the absorption area, resulting in large testing errors, long testing time, and non-reusability. Furthermore, national standards require destructive operations.

Method used

By testing the output voltage of a MEMS infrared detector in its packaged state, the response time can be obtained using the frequency response. A test system can be built and the amplitude-frequency curve can be fitted to calculate the cutoff frequency without opening the cap.

Benefits of technology

It enables non-destructive testing of MEMS infrared detectors, accurately obtains response time, simplifies operation procedures, reduces errors, ensures the structural integrity and reusability of detectors, and meets national standards.

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Abstract

The present application relates to the technical field of infrared detector detection, and in the prior art, for the packaged detector, if strictly according to the national standard, the cap needs to be opened, the absorption zone width is measured, and the corresponding index test is carried out, after the cap is opened, the device cannot be packaged again, and cannot be reused;The present application provides a kind of MEMS infrared detector response time non-destructive measurement method, in the state that the cap structure of the detector to be tested is not destroyed, the output voltage of the packaged detector to be tested is directly tested, the response time of the detector to be tested is obtained by the frequency response obtained by testing, the structure of the detector is kept complete and can be reused, while ensuring the measurement accuracy, the operation process is significantly simplified, and the intervention degree to the sensor body is reduced.
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