Diamond intelligent manufacturing system and manufacturing method

Abstract

The invention discloses an intelligent diamond manufacturing system and method. The intelligent manufacturing system comprises a control unit, a microwave synthesis assembly, a laser machining assembly and an ion beam machining assembly. The microwave synthesis assembly, the laser processing assembly and the ion beam processing assembly are electrically connected with the control unit and receive instructions of the control unit. The control unit comprises a conveying device, a monitoring module, a human-computer interface and a controller; the conveying device is used for conveying a workpiece to be machined into the microwave synthesis assembly, the laser machining assembly and the ion beam machining assembly. The monitoring module is used for monitoring the states of the microwave synthesis assembly, the laser processing assembly and / or the ion beam processing assembly and generating a feedback signal; the controller is electrically connected with the microwave synthesis assembly, the laser processing assembly and the ion beam processing assembly and outputs a control instruction according to information input by a user and a feedback signal of the monitoring module. Compared with the prior art, automatic one-stop manufacturing of the diamond is achieved.

Description

Technical Field

[0001] This invention relates to the field of materials processing technology, specifically to an intelligent diamond manufacturing system and its usage method. Background Technology

[0002] Currently, the materials processing field typically employs single-process equipment to complete specific steps. For example, microwave beam synthesis chamber equipment is used for depositing thin films such as diamond and silicon carbide, but subsequent transfer to other equipment for surface treatment is required. Ion beam processing equipment is used for surface modification or etching, but requires a separate vacuum environment. Laser lift-off / thinning equipment is used to separate thin films from substrates, but requires additional clamping and positioning. Furthermore, laser processing is usually only used for lift-off / thinning or single-precision processing, lacking the synergistic control to achieve rough / fine / ultra-fine processing and high-precision thinning / lift-off / thinning within the same equipment, resulting in limited processing efficiency.

[0003] Chemical vapor deposition (CVD) diamond technology is an advanced material preparation method that uses a mixture of carbon-containing gases (such as methane, carbon dioxide, etc.) and hydrogen under certain pressure and temperature to excite and decompose them, forming active diamond carbon atoms, which are then deposited and intergrown on a substrate to form polycrystalline diamond or single-crystal diamond. Compared with traditional high-temperature and high-pressure synthesis methods, CVD diamond can produce large-area, high-quality diamond films or bulk materials, and the products do not contain any metal catalysts, making their thermal stability close to that of natural diamond. However, the manufacturing of existing diamond devices requires multiple pieces of equipment. Multiple processes require multiple workpiece transfers, which is time-consuming and prone to introducing contamination; the cost is high: multiple independent machines need to be purchased, requiring a large floor space; and the process compatibility is poor, with difficulty in matching parameters between different machines, affecting processing accuracy.

[0004] Therefore, the existing manufacturing system needs to be improved and integrated. Summary of the Invention

[0005] The first technical problem to be solved by the present invention is to provide a one-stop intelligent diamond manufacturing system in response to the above-mentioned technical status quo.

[0006] The second technical problem to be solved by the present invention is to provide a method for manufacturing diamond with ultra-precision precision and high production efficiency, in light of the above-mentioned technical status.

[0007] The technical solution adopted by the present invention to solve the first technical problem mentioned above is: an intelligent diamond manufacturing system, characterized in that: it includes a control unit, a microwave synthesis component for depositing diamond, a laser processing component for processing and stripping diamond, and an ion beam processing component for processing diamond; the microwave synthesis component, the laser processing component, and the ion beam processing component are all electrically connected to the control unit and receive instructions from the control unit;

[0008] The control unit includes

[0009] A conveying device for transporting workpieces to be processed into microwave synthesis components, laser processing components, and ion beam processing components;

[0010] The monitoring module is used to monitor the status of the microwave synthesis component, the laser processing component, and / or the ion beam processing component, and generate feedback signals;

[0011] The human-machine interface (HMI) is used to receive user input and display the status information of the intelligent diamond manufacturing system based on feedback signals from the monitoring module; and,

[0012] The controller is electrically connected to the microwave synthesis component, laser processing component, and ion beam processing component, and outputs control commands based on user input and feedback signals from the monitoring module.

[0013] To generate microwaves and produce diamond, preferably, the microwave synthesis assembly includes...

[0014] The first workshop has a storage cavity for placing parts to be processed;

[0015] An electromagnetic field generator, connected to a control unit, is used to generate microwaves;

[0016] A processing column, located at the top of the first working chamber, contains a synthesis chamber communicating with the placement chamber; and,

[0017] A waveguide, one end of which is mounted on an electromagnetic field generator and connected to a processing column, is used to transmit microwaves generated by the electromagnetic field generator to the synthesis cavity.

[0018] For processing diamonds, preferably, the laser processing assembly includes...

[0019] The second studio is located on one side of the first studio and contains a laser processing cavity for placing the workpieces to be processed.

[0020] A laser, connected to a control unit, is used to generate a five-axis laser beam;

[0021] A laser transmission device includes a reflector and an adjustment device connected to a control unit for adjusting the position and angle of the reflector, thereby controlling the direction of the laser beam;

[0022] A focusing device, connected to a control unit, is used to focus the laser beam onto the workpiece; and

[0023] An annular nozzle is located on the outer periphery of the laser focusing device and is used to deliver inert gas and is electrically connected to the control unit; the size of the annular nozzle is adjustable so that the outlet diameter of the annular nozzle is 0.5-2mm.

[0024] An oxygen concentration sensor, located in the second working chamber and electrically connected to the control unit, is used to detect the oxygen concentration within the second working chamber. When the detected oxygen concentration exceeds the limit, the control unit receives the signal and controls the annular nozzle to increase the flow rate of inert gas, ensuring that the processing area is always in an inert atmosphere; thereby avoiding oxidation reactions during laser cutting and reducing surface defects (such as pits, impurities, etc.). Various inert gases can be selected; preferably, argon gas with a purity >99.999% is used. The annular nozzle delivers the inert gas, forming a "localized gas curtain," which can control the oxygen concentration in the second working chamber to <10 ppm.

[0025] Diamond exhibits strong anisotropy, and different crystal facets require bombardment with ion beams at different angles. Preferably, the ion beam processing assembly includes...

[0026] The third workshop is located on one side of the second workshop and contains an ion beam processing chamber for placing the workpiece to be processed.

[0027] An ion source, connected to a control unit and used to generate a six-axis ion beam, is equipped with a laser positioning device at the bottom.

[0028] An accelerator focusing device, connected to a control unit, is used to accelerate a six-axis ion beam;

[0029] A thinning detector, electrically connected to the control unit, is used to detect the thickness and thinning state of the diamond; and,

[0030] The scanning device is connected to the control unit and is used to control the direction of the ion beam.

[0031] Preferably, the control unit includes a ventilation device for venting and filling the synthesis cavity, laser processing cavity, and / or ion beam processing cavity.

[0032] To provide power, the intelligent diamond manufacturing system preferably also includes electrical control components that provide power to the control unit, microwave synthesis assembly, laser processing assembly, and ion beam processing assembly. The electrical control components are connected to an external power source.

[0033] To facilitate the transfer of the workpiece, preferably, the transfer device includes...

[0034] Conveyor belt;

[0035] The substrate stage is vertically mounted on the conveyor belt and has its top for placing the workpiece to be processed. The conveyor belt transports the substrate stage to the microwave synthesis assembly, laser processing assembly, and ion beam processing assembly.

[0036] The technical solution adopted by the present invention to solve the second technical problem mentioned above is: a method for manufacturing diamond, characterized in that: the intelligent diamond manufacturing system described above is used.

[0037] Preferably, the process includes the following steps:

[0038] ① Place the raw materials:

[0039] Synthetic diamond: The conveying device transports the workpiece to be processed into the microwave synthesis assembly, where the microwave synthesis assembly forms diamond on the surface of the workpiece;

[0040] ③ Laser roughing: The conveying device transports the workpiece to be processed into the laser processing assembly, and the laser processing assembly performs laser processing on the surface of the diamond film to obtain the rough-processed diamond film;

[0041] ④ Ion beam finishing: The conveying device transports the workpiece to be processed to the ion beam processing assembly, which performs a planarization treatment on the surface of the rough-processed diamond film.

[0042] ⑤ Peeling and primary thinning: The conveying device transports the workpiece back to the laser processing assembly. The laser processing assembly performs laser peeling at the connection between the diamond film and the workpiece and thins the diamond to obtain high-precision diamond.

[0043] ⑥ Secondary thinning with ion beam: The conveying device transports the diamond obtained by stripping back into the ion beam processing assembly. The ion beam processing assembly performs a second planarization treatment on the surface of the rough-processed diamond, that is, performs secondary thinning on the diamond to obtain an ultra-thin and ultra-precise diamond.

[0044] The purpose of roughing is to remove graphite phase impurities deposited on the diamond surface and reduce its surface roughness. Finishing uses an ion beam to polish the diamond again to further improve surface finish to nanometer-level precision, while removing micron-level defects remaining from roughing. Roughing cannot be performed after peeling, as its mechanical action can easily damage the peeled / thinned free-state diamond film; finishing must be completed before peeling to ensure the final surface quality meets the requirements of the device application.

[0045] Preferably, in step ②, a reaction gas is introduced into the first working chamber, wherein the reaction gas is CH4 and H2.

[0046] Compared with existing technologies, the advantages of this invention are as follows: The intelligent diamond manufacturing system includes a control unit, a microwave synthesis component, a laser processing component, and an ion beam processing component, enabling one-stop diamond manufacturing. The processing parts are transported via a conveying device, eliminating the need for manual transfer of intermediate diamond processing products. The microwave synthesis component, laser processing component, and ion beam processing component are all electrically connected to the control unit and receive instructions from it. Therefore, the processing progress of the manufacturing system is controlled by the control unit, achieving automated diamond manufacturing. The control unit includes a conveying device, a monitoring module, a human-machine interface, and a controller. It can receive user input information through the human-machine interface and control the manufacturing status of the intelligent diamond manufacturing system through the controller. Furthermore, the monitoring module can query the diamond processing status. The laser processing component and the ion beam processing component are connected, allowing for laser roughing before ion beam processing and laser stripping and primary thinning after ion beam processing, followed by secondary thinning in the ion beam processing component. This eliminates the need for separate stripping and thinning devices, resulting in high production efficiency, low manufacturing cost, and the production of high-precision and ultra-thin diamonds. Attached Figure Description

[0047] Figure 1 This is a schematic diagram of the structure of an embodiment;

[0048] Figure 2 This is a schematic diagram of the structure from another direction of the embodiment;

[0049] Figure 3 This is a three-dimensional sectional view of the processed column for an example. Detailed Implementation

[0050] The present invention will be further described in detail below with reference to the accompanying drawings and embodiments.

[0051] like Figure 1-3 The diagram shows a preferred embodiment of the present invention. The intelligent diamond manufacturing system includes an electrical control unit, a control unit 1, a microwave synthesis component 2, a laser processing component 3, an ion beam processing component 4, and a baffle 5.

[0052] The microwave synthesis component 2, the laser processing component 3, and the ion beam processing component 4 are all electrically connected to the control unit 1 and receive instructions from the control unit 1.

[0053] The control unit 1 includes a ventilation device, a conveying device 11, a monitoring module, a human-machine interface 12, and a controller 13. The conveying device 11 transports the workpiece 1a to be processed into the microwave synthesis assembly 2, the laser processing assembly 3, and the ion beam processing assembly 4. The monitoring module monitors the status of the microwave synthesis assembly 2, the laser processing assembly 3, and the ion beam processing assembly 4 and generates feedback signals. The human-machine interface 12 receives user input and displays the status information of the diamond intelligent manufacturing system based on the feedback signals from the monitoring module. The controller 13 is electrically connected to the microwave synthesis assembly 2, the laser processing assembly 3, and the ion beam processing assembly 4 and outputs control commands based on user input and the feedback signals from the monitoring module. The ventilation device vents and purifies the synthesis chamber, the laser processing chamber, and / or the ion beam processing chamber. During processing, the ventilation device discharges waste gas and introduces protective gas.

[0054] The microwave synthesis assembly 2 includes a first working chamber 21, an electromagnetic field generator 22, a processing column 23, a waveguide 24, and a cooling device. The first working chamber 21 contains a placement cavity 2a for placing the workpiece 1a to be processed; the electromagnetic field generator 22 is connected to the control unit 1 and is used to generate microwaves; the processing column 23 is located at the top of the first working chamber 21 and contains a synthesis cavity 2b communicating with the placement cavity 2a; the processing column 23 has multiple observation windows 25 for observing the synthesis cavity 2b, facilitating user observation of the processing status. One end of the waveguide 24 is located on the electromagnetic field generator 22 and connected to the processing column 23, and is used to transmit the microwaves generated by the electromagnetic field generator 22 to the synthesis cavity 2b; cooling water circulates within the cooling device.

[0055] The laser processing assembly 3 includes a second working chamber 31, a laser 32, a laser transmission device, a focusing device, an annular nozzle, and an oxygen concentration sensor (the annular nozzle, oxygen concentration sensor, laser transmission device, and focusing device are not shown in the figure). The second working chamber 31 is located on one side of the first working chamber 21 and contains a laser processing cavity 3a for placing the workpiece 1a to be processed. The laser 32 is connected to the control unit and is used to generate a five-axis laser beam. The laser transmission device includes a reflector and an adjustment device connected to the control unit for adjusting the position and angle of the reflector, thereby controlling the direction of the laser beam. The focusing device is connected to the control unit and is used to focus the laser beam onto the workpiece. The annular nozzle is located on the outer periphery of the laser focusing device and is used to deliver inert gas and is electrically connected to the control unit. The size of the annular nozzle is adjustable, so that the outlet diameter of the annular nozzle is 0.5-2 mm. The oxygen concentration sensor is located inside the second working chamber 31 and is electrically connected to the control unit, used to detect the oxygen concentration inside the second working chamber 31.

[0056] The ion beam processing assembly 4 includes a third working chamber 41, an ion source 42, an accelerating and focusing device, a thinning detector 43, and a scanning device. The third working chamber 41 is located to one side of the second working chamber 31 and contains an ion beam processing cavity 4a for placing the workpiece 1a. The ion source 42 is connected to the control unit and is used to generate a six-axis ion beam. The accelerating and focusing device is connected to the control unit and is used to accelerate the six-axis ion beam. The scanning device is connected to the control unit and is used to control the direction of the ion beam. The thinning detector 43 is located on the outer periphery of the ion source 42 and is electrically connected to the control unit, and is used to detect the thickness and thinning status of the diamond.

[0057] The electrical control unit is connected to an external power source and provides power to the control unit, microwave synthesis assembly, laser processing assembly, and ion beam processing assembly.

[0058] The conveying device 11 includes a conveyor belt 111 and a substrate stage 112 capable of heating and cooling. The substrate stage 112 is vertically mounted on the conveyor belt 111, with its top for placing the workpiece 1a to be processed. The conveyor belt 111 conveys the substrate stage 112, thereby transporting the workpiece 1a to the microwave synthesis assembly 2, the laser processing assembly 3, and the ion beam processing assembly 4. The conveying device 11 also includes a first positioning point 33 and a second positioning point 44. When the substrate stage 112 is located at the first positioning point 33, it is in the second working chamber 31; when the substrate stage 112 is located at the second positioning point 44, it is in the third working chamber 41.

[0059] The baffle 5 is a movable partition plate, and there are multiple baffles 5. Each baffle 5 is respectively disposed between the first working chamber 21, the second working chamber 31 and the third working chamber 41 to separate the various working chambers, and seals the first working chamber 21, the second working chamber 31 and the third working chamber 41 to prevent air leakage. The baffle 5 has various forms. In this embodiment, the baffle 5 is pulled out and disposed between the first working chamber 21, the second working chamber 31 and the third working chamber 41. In other embodiments, the baffle 5 can also be telescopic, flip-top, etc. The specific structure of the baffle 5 is prior art, and will not be described in detail in this invention.

[0060] This embodiment also provides a method for manufacturing diamond, using the aforementioned intelligent diamond manufacturing system; the method includes the following steps:

[0061] ①Placing raw materials: Place the workpiece 1a, which serves as a substrate, onto the conveying device 11;

[0062] ② Microwave synthesis: In the first working chamber 21, the conveying device 11 transports the substrate 1a to be processed to the microwave synthesis assembly 2. The substrate stage 112 rises so that the substrate 1a enters the synthesis chamber 2b. The microwave synthesis assembly 2 forms a diamond film on the surface of the substrate 1a. The substrate 1a is a single-crystal silicon substrate (50.8 mm in diameter and 525 μm in thickness). The gas exchange device introduces the reaction gas, which is CH4 / H2 = 1.5% / 98.5%. The working pressure of the chamber is 120 Torr. The cooling water temperature is 14.5-15.5℃. The surface temperature of the substrate stage 112 is 850±10℃. The microwave power of the electromagnetic field generator 22 is 8-10 kW. The microwave frequency is 2.45 GHz. After a deposition time of about 10 hours, the target thickness of diamond deposition of 100 μm is achieved on the surface of the single-crystal silicon substrate.

[0063] ③ Rough machining: In the second working chamber 31, the conveying device 11 transports the workpiece 1a to be processed to the laser processing assembly 3. The laser 32 of the laser processing assembly 3 generates a five-axis laser beam. The five-axis laser beam is transmitted by the laser transmission device and focused by the focusing device to perform laser processing on the surface of the diamond film, obtaining a rough-machined diamond film; the laser 32 emits a five-axis laser beam; the power density of the laser beam is 5-10×10 7 W / cm 2 The spot size is 150-300μm, the speed is 1-2m / s, and the processing time is 25-40min.

[0064] ④ Finishing: In the third working chamber 41, the conveying device 11 transports the workpiece 1a to be processed to the ion beam processing assembly 4. The ion source 42 of the ion beam processing assembly 4 generates an ion beam. The ion beam is accelerated and focused by a focusing device to form a high-energy focused ion beam to perform nanoscale finishing and smoothing treatment (surface polishing and microstructure etching, etc.) on the rough-processed diamond surface. The ion source 42 emits an ion beam with a beam energy of 30-50 keV and a beam density of 200-500 mA / cm². 2 Beam spot focusing Φ10.0-40.0mm.

[0065] ⑤ Peeling and One-Time Thinning: Inside the second working chamber 31, the conveying device 11 transports the workpiece 1a back to the laser processing assembly 3. The controller 13 controls the laser processing assembly 3 to be in peeling / thinning mode. The laser processing assembly 3 performs laser peeling at the junction of the diamond film and the workpiece 1a, and performs micron-level thinning on the resulting diamond. The laser mode is picosecond ultraviolet laser (355nm); energy density 0.35J / cm². 2 The light spot size is 3μm.

[0066] ⑥ Secondary thinning: The diamond obtained in step ⑤ is transported to the third working chamber 41, where an ion source 42 emits an ion beam to perform nanoscale thinning, resulting in an ultrathin, ultra-precise diamond with good dimensional accuracy and surface quality; the ion beam current energy is 1-5 keV, and the maximum beam current density can reach 2-10 mA / cm². 2 The beam size is Φ1.0-5.0mm.

Claims

1. A diamond intelligent manufacturing system, characterized in that: It includes a control unit (1), a microwave synthesis component (2) for depositing diamond, a laser processing component (3) for processing and stripping diamond, and an ion beam processing component (4) for processing diamond; the microwave synthesis component (2), the laser processing component (3), and the ion beam processing component (4) are all electrically connected to the control unit (1) and receive instructions from the control unit (1); The control unit (1) includes A conveying device (11) is used to convey the workpiece (1a) to be processed into the microwave synthesis assembly (2), the laser processing assembly (3) and the ion beam processing assembly (4); The monitoring module is used to monitor the status of the microwave synthesis component (2), the laser processing component (3) and / or the ion beam processing component (4) and generate feedback signals; Human-machine interface (12), used to receive user input and display the status information of the diamond intelligent manufacturing system based on feedback signals from the monitoring module; and, The controller (13) is electrically connected to the microwave synthesis component (2), the laser processing component (3) and the ion beam processing component (4) and outputs control commands based on the information input by the user and the feedback signal from the monitoring module.

2. The intelligent diamond manufacturing system according to claim 1, characterized in that: The microwave synthesis component (2) includes The first workshop (21) has a placement cavity (2a) for placing the workpiece (1a) to be processed; An electromagnetic field generator (22) is connected to a control unit (1) and is used to generate microwaves; A processing column (23) is located at the top of the first working chamber (21), and contains a synthesis chamber (2b) communicating with the placement chamber (2a); and, A waveguide (24) is mounted on an electromagnetic field generator (22) and connected to a processing column (23) to transmit microwaves generated by the electromagnetic field generator (22) into a synthesis cavity (2b).

3. The intelligent diamond manufacturing system according to claim 2, characterized in that: The laser processing component (3) includes The second studio (31) is located on one side of the first studio (21) and has a laser processing cavity (3a) for placing the workpiece (1a) to be processed. A laser (32) is connected to a control unit and is used to generate a five-axis laser beam; A laser transmission device includes a reflector and an adjustment device connected to a control unit for adjusting the position and angle of the reflector, thereby controlling the direction of the laser beam; A focusing device, electrically connected to the control unit (1) and used to focus the laser beam onto the workpiece; An annular nozzle is located on the outer periphery of the laser focusing device and is used to deliver inert gas and is electrically connected to the control unit; the size of the annular nozzle is adjustable so that the outlet diameter of the annular nozzle is 0.5-2mm. as well as An oxygen concentration sensor is located in the second chamber (31) and electrically connected to the control unit (1) to detect the oxygen concentration in the second chamber (31).

4. The intelligent diamond manufacturing system according to claim 3, characterized in that: The ion beam processing assembly (4) includes The third working room (41) is located on one side of the second working room (31) and has an ion beam processing chamber (4a) for placing the workpiece (1a) to be processed. An ion source (42) is connected to a control unit and used to generate a six-axis ion beam; An accelerator focusing device, connected to a control unit, is used to accelerate a six-axis ion beam; as well as, The scanning device is connected to the control unit and is used to control the direction of the ion beam.

5. The intelligent diamond manufacturing system according to claim 4, characterized in that: The control unit includes a ventilation device for venting and filling the synthesis cavity, laser processing cavity, and / or ion beam processing cavity.

6. The intelligent diamond manufacturing system according to claim 1, characterized in that: The intelligent diamond manufacturing system also includes electrical controls that provide power to the control unit, microwave synthesis component, laser processing component, and ion beam processing component.

7. The intelligent diamond manufacturing system according to claim 1, characterized in that: The conveying device (11) includes Conveyor belt (111); The substrate stage (112) is mounted on the conveyor belt (111) and the top is used to place the workpiece (1a) to be processed. The conveyor belt (111) transports the substrate stage (112) to the microwave synthesis assembly (2), the laser processing assembly (3) and the ion beam processing assembly (4).

8. A method for manufacturing diamond, characterized in that: The intelligent diamond manufacturing system described in any one of claims 1 to 7 is adopted.

9. The manufacturing method according to claim 8, characterized in that: Includes the following steps: ①Place raw materials: Place the workpiece (1a) to be processed on the conveyor (11); ②Preparation of diamond film: The conveying device (11) transports the workpiece (1a) to the microwave synthesis component (2), and the microwave synthesis component (2) forms diamond on the surface of the workpiece (1a); ③ Laser roughing: The conveying device (11) transports the workpiece (1a) to the laser processing assembly (3), and the laser processing assembly (3) performs laser processing on the surface of the diamond film to obtain the rough-processed diamond; ④ Ion beam finishing: The conveying device (11) transports the workpiece (1a) to the ion beam processing assembly (4), and the ion beam processing assembly (4) performs a smoothing treatment on the rough-machined diamond surface; ⑤ Peeling and one-time thinning: The conveying device (11) transports the workpiece (1a) back into the laser processing assembly (3). The laser processing assembly (3) performs laser peeling on the connection between the diamond and the workpiece (1a) and thins the diamond to obtain the diamond. ⑥ Secondary thinning: The diamond obtained in step ⑤ is transported to the third working chamber (41) of the ion beam processing component (4), and the ion source (42) emits a six-axis ion beam to perform secondary thinning on the diamond.

10. The manufacturing method according to claim 9, characterized in that: Step ② introduces a reaction gas into the first working chamber (21), the reaction gas being CH4 and H2.

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