An adjustable-precision wideband temperature compensation circuit based on gallium arsenide process

Abstract

The application discloses a precision-adjustable wideband temperature compensation circuit based on a gallium arsenide process and relates to the technical field of integrated circuits.The circuit comprises a temperature compensation driving module, a temperature compensation attenuation module and a temperature compensation precision control logic module.The temperature compensation driving module senses environmental temperature changes through a clamping circuit and a differential network and outputs an analog control voltage.The temperature compensation attenuation module comprises a plurality of parallel controllable attenuation units, each of which comprises two series-connected transistors, and the on-off of each controllable attenuation unit is controlled by a switch signal of the control logic module and the attenuation amount of each controllable attenuation unit is controlled by an analog voltage of the driving module.The control logic module controls the conduction of different numbers of attenuation units by receiving an external TTL signal, so that the multi-gear adjustment of the overall temperature compensation precision is realized.The application overcomes the shortcomings of the traditional temperature compensation circuit, such as unadjustable precision and narrow frequency band, and has the advantages of wide working frequency band, adjustable temperature compensation precision, compact structure and easy integration, and is suitable for high-performance millimeter wave communication systems.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of integrated circuits, in particular to a wideband temperature compensation circuit with adjustable precision based on a gallium arsenide process. BACKGROUND

[0002] In a wireless communication system, the change of ambient temperature has a significant impact on the performance of the transmitter and receiver. Due to the temperature characteristics of transistors, the gain of the amplifier in the transceiver will decrease in a high-temperature environment and increase in a low-temperature environment, resulting in a large fluctuation of the output power, gain, noise figure and other key characteristics of the system with the change of ambient temperature. In order to improve the reliability and stability of the wireless communication system, cope with different ambient temperatures and improve the environmental adaptability of the product, a temperature compensation circuit needs to be added to the temperature-sensitive system to keep the link gain within a desired range and maintain the stability of the system.

[0003] The commonly used temperature compensation methods currently face many limitations in system applications. For example, the thermistor voltage division compensation method has a large device volume, a small compensation range and low precision; the bias circuit compensation method is based on the temperature characteristics of diodes and transistors to improve the fluctuation of the gain of the amplifier with temperature, but the temperature compensation precision is uncontrollable and the working frequency band range is small; the operational amplifier control voltage compensation method performs closed-loop feedback through the sampling signal at the output end to compensate the gain, but this method has high cost and long response time. With the rapid development of wireless communication technology, high-reliability wireless transceivers need to flexibly adjust the system gain according to the environmental temperature and the application requirements of the system to adapt to complex application environments. Therefore, a wideband temperature compensation circuit with adjustable precision is urgently needed. SUMMARY

[0004] In view of the above deficiencies in the prior art, the present application provides a wideband temperature compensation circuit with adjustable precision based on a gallium arsenide process.

[0005] In order to achieve the above-mentioned application purposes, the technical solution adopted by the present application is as follows:

[0006] A wideband temperature compensation circuit with adjustable precision based on a gallium arsenide process, comprising a temperature compensation driving module, at least one temperature compensation attenuation module and a temperature compensation precision control logic module.

[0007] The temperature compensation driving module is connected to the temperature compensation attenuation module. The temperature compensation driving module is used to generate an analog control voltage according to the change of ambient temperature and transmit it to the temperature compensation attenuation module.

[0008] The temperature compensation attenuation module is connected in series between the radio frequency input port and the radio frequency output port. The temperature compensation attenuation module is used to generate a temperature-modulated attenuation of the passing radio frequency signal according to the analog control voltage.

[0009] The warm-up attenuation module comprises one or more controllable attenuation units connected in parallel, each controllable attenuation unit comprising a first transistor and a second transistor; the gate of the first transistor is connected to the output terminal of the warm-up precision control logic module to receive a switching control signal for controlling the on-off of the attenuation unit; the gate of the second transistor is connected to the output terminal of the warm-up drive module to receive an analog control voltage; the source and the drain of the second transistor are connected in series in the radio frequency path, and the on-resistance of the second transistor is modulated by the analog control voltage to determine the attenuation amount.

[0010] The warm-up precision control logic module is used for receiving an external digital control signal and generating a corresponding switching control signal, and transmitting the switching control signal to the warm-up attenuation module to control the number of controllable attenuation units turned on to adjust the warm-up precision.

[0011] Further, the warm-up drive module comprises a clamping circuit and a differential amplification network; one end of the clamping circuit is connected to an external voltage source, and the other end of the clamping circuit is connected to one end of the differential network; the clamping circuit is used for filtering the fluctuation of the external voltage source to transmit a stable reference voltage to the differential amplification network; the differential amplification network is used for receiving the stable reference voltage and sensing temperature changes by using an element with temperature-sensitive characteristics to output an analog control voltage.

[0012] Further, the element with temperature-sensitive characteristics adopts a diode.

[0013] Further, in the warm-up precision control logic module, the external digital control signal is received and the corresponding switching control signal is generated, both of which are TTL levels.

[0014] Further, the warm-up precision control logic module comprises resistors R10, R11, R12, R13, a transistor T9 and a transistor T10; one end of the resistor R10 is connected to a logic control level AT1, the other end of the resistor R10 is connected to one end of the resistor R11 and the gate of the transistor T9, the other end of the resistor R11, the drain of the transistor T9 and the drain of the transistor T10 are all connected to the ground, the source of the transistor T9 is connected to one end of the resistor R12 and the gate of the transistor T10, the other end of the resistor R12 and one end of the resistor R13 are both connected to an external voltage source, and the other end of the resistor R13 and the source of the transistor T10 are both connected to the warm-up attenuation module.

[0015] Further, the warm-up drive module, the warm-up attenuation module and the warm-up precision control logic module are all manufactured by using a gallium arsenide process.

[0016] The present application has the following beneficial effects:

[0017] (1) The temperature compensation driving module in the application comprises a clamping circuit and a differential network, the clamping circuit can reduce the influence of reference voltage fluctuation on the performance of the temperature compensation circuit, and the differential network utilizes the change of the on-voltage drop of the diode with temperature to change the output voltage of the differential amplification circuit, thereby controlling the transistor gate bias of the temperature compensation attenuation module and adjusting the attenuation amount of the temperature compensation attenuation module, which can effectively expand the voltage adjustment range and widen the temperature compensation range;

[0018] (2) The temperature compensation attenuation module in the application mainly adopts a transistor parallel network, each parallel branch comprises two series-connected transistors, the gate of the first transistor is connected to the temperature compensation precision control logic module, the output voltage of the temperature compensation precision control logic module is used to control the on and off of the transistor, the series impedance of the second transistor in the on state can realize the attenuation function of the radio frequency signal, and the second transistor in the off state does not attenuate; the gate of the second transistor is connected to the temperature compensation driving module, the temperature compensation driving module changes the output voltage when the ambient temperature changes, adjusts the gate bias of the transistor, thereby changing the series impedance of the transistor and realizing the change of the attenuation amount. The temperature compensation attenuation circuit proposed in the application is of a parallel structure, the number of parallel branches can be flexibly adjusted according to the need of temperature compensation precision, the structure is simple, the working frequency band range is wider, and it is more suitable for high-frequency applications;

[0019] (3) The temperature compensation precision control logic module in the application has a simple structure and can realize the high-low conversion function of the output voltage through TTL high-low level switching, thereby controlling the on and off of the temperature compensation attenuation module and realizing the temperature compensation precision adjustment function. The temperature compensation precision control logic module does not need negative voltage as the reference voltage, the structure is simpler, the power supply requirement of the system is lower, and the application range is wider;

[0020] (4) The precision-adjustable wideband temperature compensation circuit proposed in the application is designed by using a gallium arsenide process, and is convenient for gallium arsenide multifunction chip integration. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 It is a structure schematic diagram of an adjustable precision wideband temperature compensation circuit based on a gallium arsenide process.

[0022] Figure 2 It is a principle schematic diagram of a three-gear adjustable precision wideband temperature compensation circuit. DETAILED DESCRIPTION

[0023] The specific embodiments of the application are described below to facilitate those skilled in the art to understand the application, but it should be clear that the application is not limited to the scope of the specific embodiments, and for those skilled in the art, it is obvious that various changes are within the spirit and scope of the application defined and determined by the appended claims, and all the application and creation utilizing the concept of the application are within the scope of protection.

[0024] AsFigure 1 As shown, a precision-adjustable wideband temperature compensation circuit based on a gallium arsenide process includes a temperature compensation drive module, at least one temperature compensation attenuation module, and a temperature compensation precision control logic module, wherein:

[0025] The temperature compensation attenuation module is connected in series between the radio frequency input port and the radio frequency output port; the temperature compensation attenuation module is configured to generate temperature-modulated attenuation on the passing radio frequency signal according to the analog control voltage;

[0026] The temperature compensation drive module includes a clamping circuit and a differential amplification network; one end of the clamping circuit is connected to an external voltage source, and the other end of the clamping circuit is connected to one end of the differential network; the clamping circuit is configured to filter fluctuations in the external voltage source to transmit a stable reference voltage to the differential amplification network; the differential amplification network is configured to receive the stable reference voltage and use elements with temperature-sensitive characteristics to sense temperature changes to output an analog control voltage, wherein the input end of the clamping circuit is connected to the external voltage source. Specifically:

[0027] The clamping circuit includes diodes D1-D10 and resistors R14-R18, wherein the anode of diode D1 is connected to the external voltage source Vd, and the cathode is connected to ground through diodes D2, D3, and D4 and resistor R18 in sequence; resistor R14 is a bias resistor, one end of which is connected to the external voltage source Vd, and the other end is connected to the connection point of resistor R18 and diode D4 through a series circuit composed of diodes D5, D6, and D7 and a series circuit composed of diodes D8, D9, D10, and R17; one end of resistor R15 is connected to the connection point of diodes D6 and D7, and the other end is connected to the connection point of diode D4 and resistor R18 through resistor R16.

[0028] The differential amplification network includes a differential pair of transistors T12 and T13, transistor T11, and resistors R19-R22, wherein the gate of transistor T12 is connected to the connection point of resistors R15 and R16, the source is connected to the system voltage source Vd through resistor R21, and the drain is connected to the source of transistor T11; the gate of transistor T13 is connected to the connection point of diode D10 and resistor R17, and the source is connected to the external voltage source Vd through resistor R22; the gate and drain of transistor T11 are connected to ground through resistors R20 and R19, respectively.

[0029] The warm-up attenuation module comprises one or more controllable attenuation units connected in parallel, each controllable attenuation unit comprising a first transistor and a second transistor; the gate of the first transistor is connected to the output terminal of the warm-up precision control logic module to receive a switching control signal for controlling the on-off of the attenuation unit; the gate of the second transistor is connected to the output terminal of the warm-up driving module to receive an analog control voltage; the source and the drain of the second transistor are connected in series in the radio frequency path; and the on-resistance of the second transistor is modulated by the analog control voltage to determine the attenuation amount.

[0030] The warm-up precision control logic module comprises resistors R10, R11, R12, R13, a transistor T9 and a transistor T10; one end of the resistor R10 is connected to a logic control level AT1; the other end of the resistor R10 is connected to one end of the resistor R11 and the gate of the transistor T9; the other end of the resistor R11, the drain of the transistor T9 and the drain of the transistor T10 are all connected to the ground; the source of the transistor T9 is connected to one end of the resistor R12 and the gate of the transistor T10; the other end of the resistor R12 and one end of the resistor R13 are both connected to an external voltage source; the other end of the resistor R13 and the source of the transistor T10 are both connected to the warm-up attenuation module.

[0031] The technical principle of this invention is as follows: Capacitors C1 and C2 are DC blocking capacitors, and resistor R1 is used to prevent the radio frequency signal from leaking into the DC power supply network. The radio frequency signal enters the temperature compensation attenuation module through the RFin input terminal. The gate bias of transistors T1, T3, T5, and T7 in the temperature compensation attenuation module is determined by the voltage output from the temperature compensation accuracy control logic module to resistors R2, R4, R6, and R8. When the control level AT1 of the temperature compensation accuracy control logic module is TTL low, the logic module outputs 0V, and transistors T1, T3, T5, and T7 in the temperature compensation attenuation module are in the off state. At this time, the temperature compensation attenuation module has no attenuation function, and the radio frequency signal is directly output through the RFout port without temperature compensation. When the control level AT1 of the temperature compensation accuracy control logic module is TTL high, the logic module outputs 5V. Transistors T1, T3, T5, and T7 of the temperature compensation attenuation module are turned on. The series impedances R3, R5, R7, and R9 of transistors T2, T4, T6, and T8 absorb the RF signal, and the circuit enters the temperature compensation attenuation mode. The attenuation amount is determined by the gate bias of transistors T2, T4, T6, and T8, which in turn is determined by the output voltage of the temperature compensation drive module. The temperature compensation drive module consists of a clamping circuit and a differential network. The diodes in the clamping circuit effectively reduce the impact of reference voltage fluctuations on the performance of the temperature compensation circuit. The differential network utilizes the change in diode forward voltage drop with temperature to change the output voltage of the differential amplifier circuit, thereby causing the series impedance of transistors T2, T4, T6, and T8 to change with temperature, achieving different attenuation amounts under different ambient temperatures and thus achieving the effect of temperature compensation. The number of parallel branches of the controllable attenuation unit in the temperature-compensated attenuation module is not fixed. During circuit design, the temperature-compensated attenuation accuracy can be changed by increasing or decreasing the number of parallel branches of the controllable attenuation unit according to the specific application requirements of the system. For example... Figure 1 As shown in the figure, the present invention provides a schematic diagram of a broadband temperature compensation circuit with a temperature compensation accuracy of 4dB.

[0032] The broadband temperature compensation circuit design method proposed in this invention is not limited to a single temperature compensation accuracy value. For complex multifunctional systems facing complex and ever-changing application environments, different levels of temperature compensation accuracy may be required. This invention can... Figure 1 Based on the temperature compensation circuit shown, a controllable attenuation unit and a corresponding temperature compensation accuracy control logic module are added to the temperature compensation attenuation module. Through this method, a broadband temperature compensation circuit with adjustable accuracy can be realized. This invention illustrates a design method for a broadband temperature compensation circuit with multi-level adjustable accuracy. Figure 1 Based on the above, add two controllable temperature-compensated attenuation units, such as Figure 2As shown, the temperature compensation attenuation module 1 is a 4dB temperature compensation attenuation position, the temperature compensation attenuation module 2 and the temperature compensation attenuation module 3 are both 2dB temperature compensation attenuation positions, the temperature compensation attenuation module 1 is in an open state, and the temperature compensation attenuation module 2 and the temperature compensation attenuation module 3 are determined to be turned on or turned off by the temperature compensation precision control logic module. When the logic control levels AT1 and AT2 of the temperature compensation precision control logic module are both low levels, the temperature compensation attenuation module 2 and the temperature compensation attenuation module 3 are both in a turned-off state, only the temperature compensation attenuation module 1 of the circuit works, and the temperature compensation precision is 4dB; when one of AT1 and AT2 is a high level and the other is a low level, the temperature compensation precision of the circuit is 6dB; when AT1 and AT2 are both high levels, the three temperature compensation attenuation modules of the circuit are all in a turned-on state, and the temperature compensation precision is 8dB.

[0033] In an optional embodiment of the present application, a temperature compensation drive module is connected with the temperature compensation attenuation module; the temperature compensation drive module is used to generate an analog control voltage according to the change of the ambient temperature and transmit the analog control voltage to the temperature compensation attenuation module.

[0034] In an optional embodiment of the present application, the temperature compensation attenuation module is connected in series between a radio frequency input port and a radio frequency output port; the temperature compensation attenuation module is used to generate a temperature-modulated attenuation on the passing radio frequency signal according to the analog control voltage; the temperature compensation attenuation module contains one or more parallel controllable attenuation units, each controllable attenuation unit includes a first transistor and a second transistor; the gate of the first transistor is connected to the output end of the temperature compensation precision control logic module to receive a switch control signal, and is used to control the on-off of the attenuation unit; the gate of the second transistor is connected to the output end of the temperature compensation drive module to receive the analog control voltage, the source and the drain of the second transistor are connected in series in the radio frequency channel, and the on-resistance of the second transistor is modulated by the analog control voltage to determine the attenuation amount.

[0035] In an optional embodiment of the present application, the temperature compensation precision control logic module is used to receive an external digital control signal and generate a corresponding switch control signal, and transmit the switch control signal to the temperature compensation attenuation module to control the number of turned-on controllable attenuation units to adjust the temperature compensation precision.

[0036] In the temperature compensation precision control logic module, receiving an external digital control signal and generating a corresponding switch control signal are both TTL levels.

[0037] The warm-up precision control logic module comprises resistors R10, R11, R12, R13, transistor T9 and transistor T10; one end of the resistor R10 is connected with the logic control level AT1, the other end of the resistor R10 is connected with one end of the resistor R11 and the gate of the transistor T9, the other end of the resistor R11, the drain of the transistor T9 and the drain of the transistor T10 are all grounded, the source of the transistor T9 is connected with one end of the resistor R12 and the gate of the transistor T10, the other end of the resistor R12 and one end of the resistor R13 are both connected with an external voltage source, the other end of the resistor R13 and the source of the transistor T10 are both connected with the warm-up attenuation module.

[0038] The warm-up driving module, the warm-up attenuation module and the warm-up precision control logic module are all manufactured by using a gallium arsenide process, so as to facilitate gallium arsenide multifunctional chip integration.

[0039] The present application is described with reference to flowcharts and / or block diagrams of the methods, devices (systems) and computer program products according to embodiments of the present application. It should be understood that each flow and / or block in the flowcharts and / or block diagrams, and the combination of flows and / or blocks in the flowcharts and / or block diagrams can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor or other programmable data processing device to produce a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate a device that implements the flow Figure 1 The function specified in one flow or multiple flows and / or blocks. Figure 1 The function specified in one block or multiple blocks.

[0040] These computer program instructions can also be stored in a computer readable memory capable of guiding a computer or other programmable data processing device to work in a specific way, so that the instructions stored in the computer readable memory produce a product comprising instruction devices, which implement the flow Figure 1 The function specified in one flow or multiple flows and / or blocks. Figure 1 The function specified in one block or multiple blocks.

[0041] These computer program instructions can also be loaded into a computer or other programmable data processing device, so that a series of operation steps are performed on the computer or other programmable device to produce a computer-implemented process, so that the instructions executed on the computer or other programmable device provide a process for implementing the flow Figure 1 The function specified in one flow or multiple flows and / or blocks. Figure 1 The function specified in one block or multiple blocks.

[0042] The principles and implementation manners of the present application are described by using specific examples in the present application, and the above examples are only used for helping to understand the method of the present application and its core idea; meanwhile, for the ordinary skilled in the art, according to the idea of the present application, the specific implementation manners and application ranges can be changed, and the above description should not be understood as the limitation of the present application.

[0043] Those skilled in the art will appreciate that the examples described herein are presented for purposes of aiding the reader in understanding the principles of the present application and are not intended to limit the scope of the present application to just such specifically recited examples and embodiments. Various modifications and alterations of the present application are possible and within the scope of the present application as would be understood by those skilled in the art, and it is intended to encompass all such modifications and alterations as fall within the scope of the present application.

Claims

1. A precision adjustable wideband temperature compensation circuit based on gallium arsenide process, characterized in that, The temperature compensation driving module, the at least one temperature compensation attenuation module and the temperature compensation precision control logic module are connected in series. The temperature compensation driving module is connected with the temperature compensation attenuation module, and is configured to generate an analog control voltage according to the change of the ambient temperature and transmit the analog control voltage to the temperature compensation attenuation module. The temperature compensation attenuation module is connected in series between the radio frequency input port and the radio frequency output port. The temperature compensation attenuation module is configured to generate a temperature-modulated attenuation on the passing radio frequency signal according to the analog control voltage. The temperature compensation attenuation module comprises one or more controllable attenuation units connected in parallel, each controllable attenuation unit comprising a first transistor and a second transistor; the gate of the first transistor is connected to the output of the temperature compensation precision control logic module to receive a switch control signal for controlling the on-off of the attenuation unit; the gate of the second transistor is connected to the output of the temperature compensation driving module to receive the analog control voltage; the source and the drain of the second transistor are connected in series between the first transistor and an external voltage source Vd; the on-resistance of the second transistor is modulated by the analog control voltage to determine the attenuation amount, wherein the temperature compensation driving module comprises a clamping circuit and a differential amplification network; one end of the clamping circuit is connected to the external voltage source, and the other end of the clamping circuit is connected to one end of the differential network; the clamping circuit is configured to filter the fluctuation of the external voltage source to transmit a stable reference voltage to the differential amplification network; the differential amplification network is configured to receive the stable reference voltage and use elements with temperature-sensitive characteristics to sense the temperature change to output the analog control voltage, in particular: The clamping circuit comprises diodes D1-D10 and resistors R14-R18, wherein the anode of the diode D1 is connected to the external voltage source Vd, and the cathode is connected to the ground through diodes D2, D3 and D4 and resistor R18 in sequence; resistor R14 is a bias resistor, one end of which is connected to the external voltage source Vd, and the other end is connected to the connection point of resistor R18 and diode D4 through a series circuit composed of diodes D5, D6 and D7 and a series circuit composed of diodes D8, D9, D10 and R17; one end of resistor R15 is connected to the connection point of diodes D6 and D7, and the other end is connected to the connection point of diode D4 and resistor R18 through resistor R16; The differential amplification network comprises a differential pair of transistors T12 and T13, transistor T11 and resistors R19-R22, wherein the gate of transistor T12 is connected to the connection point of resistors R15 and R16, the source is connected to the system power supply Vd through resistor R21, and the drain is connected to the source of transistor T11; the gate of transistor T13 is connected to the connection point of diode D10 and resistor R17, and the source is connected to the external voltage source Vd through resistor R22; the gate and the drain of transistor T11 are connected to the ground through resistor R20 and resistor R19, respectively; The temperature compensation precision control logic module is configured to receive an external digital control signal and generate a corresponding switch control signal, and transmit the switch control signal to the temperature compensation attenuation module to control the number of controllable attenuation units turned on to adjust the temperature compensation precision, in particular: The warm-up precision control logic module comprises resistors R10, R11, R12, R13, a transistor T9 and a transistor T10; one end of the resistor R10 is connected with a logic control level AT1, the other end of the resistor R10 is connected with one end of the resistor R11 and the gate of the transistor T9, the other end of the resistor R11, the drain of the transistor T9 and the drain of the transistor T10 are all grounded, the source of the transistor T9 is connected with one end of the resistor R12 and the gate of the transistor T10, the other end of the resistor R12 and one end of the resistor R13 are both connected with an external voltage source, the other end of the resistor R13 and the source of the transistor T10 are both connected with the warm-up attenuation module.

2. The adjustable precision wideband temperature compensation circuit based on GaAs process according to claim 1, characterized in that, The element with the temperature sensitive characteristic adopts a diode.

3. The adjustable precision wideband temperature compensation circuit based on GaAs process according to claim 1, characterized in that, In the warm-up precision control logic module, receiving an external digital control signal and generating a corresponding switch control signal are both TTL levels.

4. The adjustable precision wideband temperature compensation circuit based on GaAs process of claim 1, wherein, The warm-up drive module, the warm-up attenuation module and the warm-up precision control logic module are all manufactured by using a gallium arsenide process.

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