Method and system for detecting pv and pi regions of a silicon wafer

Abstract

The application provides a method and system for detecting PV and PI regions of a silicon wafer, and belongs to the technical field of defect detection of silicon wafers. The method for detecting the PV and PI regions of the silicon wafer specifically comprises the following steps: firstly, performing copper decoration treatment on the surface of a silicon wafer sample to mark vacancy-type defects of the silicon wafer sample, so as to obtain a to-be-detected silicon wafer sample; then, immersing the to-be-detected silicon wafer sample, a counter electrode and a reference electrode in a hydrofluoric acid electrolyte, so that the to-be-detected silicon wafer sample serves as a working electrode and the working electrode, the counter electrode and the reference electrode jointly construct a three-electrode electrochemical system; subsequently, applying a constant anodic bias to the working electrode and keeping the constant anodic bias for a predetermined time, so that the marked vacancy-type defect region and the unmarked gap-type defect region are subjected to differential corrosion, the PV and PI regions are exposed, and the originally invisible micro defects are converted into macro and micro morphology differences which are clearly distinguishable.

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