A plasma desmearing machine for wafer processing and its processing method

Abstract

This invention relates to the field of environmentally friendly desmearing technology in wafer processing, specifically to a plasma desmearing machine and its processing method for wafer processing. The machine includes a body, a vacuum pump, and a flow guide shroud. A lower cavity is located at the top of the body, and an upper cavity is hinged to the top of the body. A lower cavity groove is formed on the inner side of the bottom end of the upper cavity, and a second circular gas distribution plate is installed at the top of the lower cavity groove. An upper cavity groove is formed on the inner side of the top end of the upper cavity, and a first circular gas distribution plate is installed on the inner side of the upper cavity groove. A process gas inlet pipe is connected to the top of the upper cavity. This invention employs a specially designed drive motor to rotate a driven gear ring, which in turn rotates a circular water-cooled electrode plate. This allows for adjustment of the working position of the circular water-cooled electrode plate when it carries the wafer. The low-speed rotation (5-10 rpm) causes the gas to form a thin layer of flow on the wafer surface, improving local uniformity. Combined with circumferential exhaust, this further enhances the uniformity of airflow and ensures a uniform gas distribution.

Description

Technical Field

[0001] This invention relates to the field of environmentally friendly desmearing technology in wafer processing, and particularly to a plasma desmearing machine for wafer processing and its processing method. Background Technology

[0002] Wafer fabrication is a core step in semiconductor manufacturing, encompassing a series of precision processes such as photolithography, etching, deposition, and doping. Photoresist removal is a crucial auxiliary step throughout this process, primarily used to remove residual photoresist (such as pattern transfer residue after photolithography and protective adhesive residue after etching). If these layers are not removed promptly, they will affect the precision of subsequent processes and the cleanliness of the wafer surface. In practice, plasma photoresist removal technology is the mainstream approach. High-purity reactive gases are introduced into a vacuum chamber, and high-frequency, high-voltage discharge ionizes them to form plasma. The high-energy active particles in plasma disrupt the chemical structure of the photoresist layer, decomposing it into small-molecule contaminants, which are then exhausted through an exhaust system. This ensures thorough removal of the photoresist layer and leaves the wafer surface undamaged, laying the foundation for subsequent wafer dicing, packaging, and other processes.

[0003] In wafer fabrication, resist removal is a crucial auxiliary step, primarily used to remove residual photoresist. Existing resist removal methods often employ wet methods, such as oxidation or solvent removal. However, these methods suffer from incomplete removal and low efficiency, requiring additional cleaning steps to adapt to the wafer fabrication process. In contrast, plasma resist removal can improve efficiency. However, during plasma resist removal, the plasma may not completely react with the colloidal material, potentially leading to the release and adhesion of organic contaminants. Over time, this accumulation can affect the cleanliness of the resist removal chamber, impacting exhaust pollution, subsequent resist removal, and maintenance frequency. Furthermore, the fixed introduction of reaction gas can result in uneven gas distribution between the wafer and the wafer. The uniformity of process gas intake and the temperature control of the electrode plates during processing significantly affect the final plasma etching effect, further impacting the wafer fabrication process. Based on these considerations, a plasma resist removal machine and its processing method for wafer fabrication are proposed. Summary of the Invention

[0004] The purpose of this invention is to solve the problems in the background art by proposing a plasma desmearing machine for wafer processing and its processing method.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A plasma desmearing machine for wafer processing includes a body, a vacuum pump, and a flow guide shroud. A lower cavity is located at the top of the body, and an upper cavity is hinged to the top of the body. A lower cavity groove is formed on the inner side of the bottom end of the upper cavity, and a second circular gas distribution plate is installed at the top of the lower cavity groove. An upper cavity groove is formed on the inner side of the top end of the upper cavity, and a first circular gas distribution plate is installed on the inner side of the upper cavity groove. A process gas inlet pipe is connected to the top of the upper cavity, and a branch pipe is connected to the outer side of the process gas inlet pipe. Both the gas inlet pipe and the branch pipe are equipped with solenoid valves. A mounting slot is installed on the front of the upper cavity. Several flow dividers are fixedly installed at the bottom of the lower cavity. A water-cooled electrode holder is installed on the top of each flow divider. A double-vortex guide channel is fixedly installed on the top of the water-cooled electrode holder. A circular water-cooled electrode plate is movably sleeved on the outside of the water-cooled electrode holder. Sealing rings are installed on opposite sides of the outer edges of the circular water-cooled electrode plate and the water-cooled electrode holder. The opposite surfaces of the water-cooled electrode holder and the circular water-cooled electrode plate... A sealing ring three is provided on the outer side. The input and output ends of the double vortex guide channel are both connected to a circulating water channel. The bottom of the circulating water channel is connected to a water channel circulation component. A sealing ring four is provided on the opposite side of the water channel circulation component and the water-cooled electrode seat. The bottom of the lower cavity is connected to a gas collection channel. The bottom of the gas collection channel is connected to a connecting pipe. A driven gear ring is fixedly sleeved on the outer side of the circular water-cooled electrode plate through an insulating component. A drive gear meshes on the outer side of the driven gear ring. A special drive motor is driven and connected to the bottom of the drive gear. A diverter pipe is connected to one side of the connecting pipe. The bottom of the diverter pipe is connected to a plasma reaction vessel. An annular electrode plate is fixedly installed inside the plasma reaction vessel. A spare electrode head is provided in the middle of the plasma reaction vessel. A connecting pipe is connected to the bottom of the plasma reaction vessel. A filter canister is connected to the bottom of the connecting pipe. An activated carbon filter layer is provided inside the filter canister. An outlet pipe is connected to the bottom of the filter canister. A vacuum pumping component is connected to the bottom of the connecting pipe.

[0007] A mounting plate is fixedly installed on one side of the flow guide, a cross-flow fan is rotatably installed inside the flow guide, an air intake duct is connected to the back of the flow guide, and an electric valve is installed inside the air intake duct.

[0008] Preferably, the upper cavity groove is located at the top of the lower cavity groove, the first circular gas distribution plate is located at the top of the second circular gas distribution plate, the input end of the process gas inlet pipe and the top end of the upper cavity are concentric circles, the lower cavity groove, the second circular gas distribution plate, the upper cavity groove and the first circular gas distribution plate are all concentric circles, a gap is left between the first circular gas distribution plate and the upper cavity groove, a gap is left between the first circular gas distribution plate and the second circular gas distribution plate, and ventilation micropores are opened inside the second circular gas distribution plate and the first circular gas distribution plate. The ventilation micropores are evenly distributed in a circle, and the pore diameter is 0.5-1mm, and the porosity is 30%-50%. The pore diameter of the ventilation micropores in the first circular gas distribution plate is larger than that in the second circular gas distribution plate, and the porosity of the ventilation micropores in the second circular gas distribution plate is smaller than that in the first circular gas distribution plate.

[0009] Preferably, the flow divider is evenly distributed in a circular pattern at the bottom of the lower cavity, and the flow divider and the gas collection channel are concentric circles. One side of the connecting pipe is connected to a vacuum gauge. An electrode connector is provided at the bottom of the lower cavity. The outer side of the flow divider is the same size as the outer side of the circular water-cooled electrode plate. The circular water-cooled electrode plate is electrically connected to the plasma generator power supply through the electrode connector.

[0010] Preferably, the top of the double-vortex guide channel is in sliding contact with the top of the inner cavity of the circular water-cooled electrode plate through a thermally conductive silicone pad. The water circulation assembly is fixedly inserted through the diverter block and extends to the top of the inner cavity of the machine body. The specially designed drive motor is fixedly installed at the bottom of the lower cavity, and the connection between the specially designed drive motor and the lower cavity is insulated.

[0011] Preferably, the plasma reaction vessel and the filter canister are fixedly connected by bolts and flanges. The end of the outlet pipe away from the filter canister is connected to the bottom end of the connecting pipe. Solenoid valve three is installed inside both the diversion pipe and the outlet pipe. Two solenoid valve two are installed inside the connecting pipe. The two solenoid valve two are located on opposite sides of the diversion pipe and the outlet pipe. The plasma reaction vessel and the filter canister are fixed inside the machine body by brackets. The input end of the vacuum pump is connected to the output end of the vacuum pumping assembly through a pipe.

[0012] Preferably, the dimensions of the mounting plate are adapted to the dimensions of the mounting slot, the mounting plate is connected to the outside of the mounting slot by a sealing ring and bolts, and an airflow guide plate assembly is provided on the outside of the cross-flow fan.

[0013] Preferably, a sealing ring is fixedly installed on the outer side of the top of the lower cavity, and the upper cavity is rotatably installed on the top of the machine body through a gas strut and a hinge seat. The specifications and dimensions of the lower cavity are adapted to those of the upper cavity.

[0014] Preferably, an operation interface is installed at the top of the front of the machine body, and maintenance doors are installed on both sides of the machine body.

[0015] In the above-mentioned plasma resist removal method for wafer processing, a plasma resist removal machine for wafer processing as described above is used, including the following steps:

[0016] S1. During operation, connect the process gas inlet pipe to the process reaction gas outlet pipe, and connect the branch pipe to the high-purity nitrogen outlet pipe (purity ≥99.999%). Install the flow guide on the outside of the mounting slot using the mounting plate and bolts. Then, connect the inlet pipe to the high-purity nitrogen outlet pipe in the same way. Connect the input end of the vacuum pump to the output end of the vacuum pumping assembly. Connect the water circulation assembly to the water cooling circulation equipment. After the setup is complete, place the wafer to be processed on top of the circular water-cooled electrode plate.

[0017] S2. Next, the upper cavity is closed, locking the upper and lower cavities together. A sealing ring seals the opposite sides of the upper and lower cavities. Then, the process reaction gas enters the upper cavity through the process gas inlet pipe. First, it is uniformly guided through the micropores of circular gas distributor plate one, and then further uniformly guided through the micropores of circular gas distributor plate two. The gas is then evenly distributed around the wafer. Simultaneously, the circular water-cooled electrode plate performs plasma ionization, etching the wafer with plasma resist removal. When the gas is discharged, it flows into the space of the distribution block through the outer side of the circular water-cooled electrode plate, and then... The flow block's circumferential limiting guides the gas into the gas collecting channel, and under the vacuum operation of the vacuum pump and vacuum assembly, the gas is discharged through the connecting pipe, increasing the overall uniformity. The flip-top inner circular cavity upper cavity is equipped with a double-layer circular gas inlet plate with two circular gas distribution plates, allowing the process gas to diffuse twice. The gas distribution plate's hole layout, with sparse holes in the middle and dense holes around the edges, makes the gas intake more uniform. The process gas is dispersed by the upper cavity gas distribution plate, and the lower cavity's internal flow block and gas collecting channel surround the gas, making the gas intake in the entire cavity more uniform, indirectly improving the efficiency of plasma ionization.

[0018] S3. During etching, the circulating water from the water circulation component flows into the input end of the double vortex guide channel through the circulating water channel. After undergoing double vortex guidance inside the double vortex guide channel, it is then introduced into the water circulation component through the circulating water channel at the output end for water circulation. The vortex-shaped circulation guide of the water flow improves the cooling efficiency of water cooling. The circular water-cooled electrode plate, combined with the vortex-type water channel design and the circulating cold water channel, ensures the uniformity of the electrode plate surface temperature and ensures the uniformity of the plasma density generated by the discharge, achieving better etching rate and uniformity, and indirectly improving the wafer processing efficiency.

[0019] S4. During the operation, if the colloid on the wafer is thick and the debinding process generates a lot of contaminants, the gas is discharged through the shunt pipe by closing solenoid valve two and opening solenoid valve three. The gas is then powered by the plasma generator to supply power to the annular electrode plate. If there are some complex organic pollutants in the gas inside the plasma reactor, further plasma decomposition is performed. Through secondary plasma discharge, the organic pollutants are decomposed into harmless small molecules such as CO2 and H2O, while the chemical structure of corrosive gases is destroyed. After further plasma decomposition, the gas is introduced into the filter canister through the connecting pipe. The activated carbon filter layer adsorbs the small organic molecules using the porous structure of the activated carbon and intercepts some small particulate matter, thereby reducing the emissions from the debinding process and increasing environmental friendliness.

[0020] S5. After prolonged operation, if it is necessary to purge the lower and upper chambers, close the solenoid valve and the gas enters the guide hood through the air inlet duct. At this time, the cross-flow fan rotates and causes the airflow to blow into the lower and upper chambers. In conjunction with the opening of the solenoid valve inside the branch pipe, the gas purges the lower and upper chambers at a flow rate of 5-10L / min for 3-5 minutes, removing residual impurities and trace amounts of moisture, thereby increasing cleanliness, reducing the impact of heavy wafer desmearing operations on subsequent processes, and indirectly increasing the cleanliness of the wafer desmearing process.

[0021] S6. Finally, during operation, the process gas flow splitting and wafer contact and cleaning process can be activated by a specially designed drive motor. The drive motor drives the drive gear to rotate, which in turn drives the driven gear ring to rotate, thereby driving the circular water-cooled electrode plate to rotate. This allows the circular water-cooled electrode plate to be adjusted in position when carrying the wafer, and rotates at a low speed of 5-10 rpm, causing the gas to flow in a thin layer on the wafer surface, improving local uniformity. This, combined with the circumferential exhaust, further increases the uniformity of the airflow, ensuring a uniform gas distribution.

[0022] Compared with existing technologies, the advantages of the plasma desmearing machine and its processing method for wafer processing provided by this invention are as follows:

[0023] 1. During operation, the wafer to be processed is placed on top of the circular water-cooled electrode plate. Then, the upper cavity is closed. The process reaction gas enters the interior of the upper cavity through the process gas inlet pipe. First, it is uniformly guided through the micropores of the first circular gas distribution plate, and then further uniformly guided through the micropores of the second circular gas distribution plate. Then, the gas is evenly distributed around the wafer. At the same time, the circular water-cooled electrode plate performs plasma ionization to perform plasma resist removal and etching on the wafer. When the gas is discharged, it flows evenly into the interior of the gas collection channel through the circumferential limiting guide of the flow divider block, which increases the overall uniformity. The flip-type inner circular cavity upper cavity is equipped with a double-layer circular gas inlet plate with the second and first circular gas distribution plates, allowing the process gas to diffuse twice. The layout of the gas distribution plate holes is sparse in the middle and dense around the edges for diffusion, making the gas intake more uniform. The process gas is dispersed by the gas distribution plate in the upper cavity, and the gas is drawn around by the flow divider block and the gas collection channel in the lower cavity, making the gas intake in the entire cavity more uniform and indirectly improving the efficiency of plasma ionization.

[0024] 2. During etching, the circulating water from the water circulation component flows into the input end of the double vortex guide channel through the circulating water channel. After undergoing double vortex guidance inside the double vortex guide channel, it is then introduced into the water circulation component through the circulating water channel at the output end for water circulation. The vortex-shaped circulation guide improves the cooling efficiency of water cooling. The circular water-cooled electrode plate, combined with the vortex-type water circuit design and the circulating cold water channel, ensures the uniformity of the electrode plate surface temperature and guarantees the uniform density of plasma generated by discharge, achieving better etching rate and uniformity, and indirectly improving wafer processing efficiency.

[0025] 3. During the process gas flow splitting and wafer contact and cleaning process, a special drive motor is started to cause the driven gear ring to rotate, which in turn drives the circular water-cooled electrode plate to rotate. This allows the circular water-cooled electrode plate to be adjusted in position when carrying the wafer. It rotates at a low speed of 5-10 rpm, causing the gas to flow in a thin layer on the wafer surface, improving local uniformity. This, combined with the circumferential exhaust, increases the uniformity of the airflow and further ensures the uniformity of gas distribution. Attached Figure Description

[0026] Figure 1 This is a front-view stereoscopic appearance structural diagram of the present invention;

[0027] Figure 2 This is a rear-view stereoscopic appearance structural diagram of the present invention;

[0028] Figure 3 This is a front-view schematic diagram of the three-dimensional structure of the concealed circular water-cooled electrode plate of the present invention;

[0029] Figure 4 This is a schematic diagram of the right-side cross-sectional structure of the present invention;

[0030] Figure 5This is a schematic diagram of the three-dimensional structure of the air guide cover of the present invention;

[0031] Figure 6 This is a schematic diagram of the external structure of the circular air distribution plate of the present invention;

[0032] Figure 7 This is a schematic diagram of the external structure of the circular air distribution plate of the present invention;

[0033] Figure 8 This is a top-view cross-sectional view of the lower cavity structure of the present invention;

[0034] Figure 9 This is the present invention. Figure 3 Enlarged schematic diagram of the structure at point A in the middle;

[0035] Figure 10 This is the present invention. Figure 4 Enlarged schematic diagram of the structure at point B;

[0036] Figure 11 This is the present invention. Figure 4 Enlarged schematic diagram of the structure at point C;

[0037] Figure 12 This is the present invention. Figure 4 Enlarged schematic diagram of the structure at point D.

[0038] In the diagram: 1. Main body; 2. Maintenance door; 3. Operating interface; 4. Lower cavity; 401. Sealing ring one; 5. Upper cavity; 6. Process gas inlet pipe; 7. Mounting slot; 8. Branch pipe; 9. Solenoid valve one; 10. Lower cavity slot; 11. Circular gas distribution plate two; 12. Upper cavity slot; 13. Circular gas distribution plate one; 14. Vacuum pump; 15. Vacuuming assembly; 16. Connecting pipe; 17. Diverter block; 18. Circulating water channel; 19. Gas collecting channel; 20. Double vortex guide channel; 21. Driven gear ring; 22. Drive gear; 23. 24. Water-cooled electrode holder; 25. Circular water-cooled electrode plate; 26. Special drive motor; 27. Water circulation assembly; 28. Sealing ring II; 29. ​​Sealing ring III; 30. Sealing ring IV; 31. Solenoid valve II; 32. Diverter pipe; 33. Solenoid valve III; 34. Plasma reaction vessel; 35. Ring electrode plate; 36. Spare electrode head; 37. Filter canister; 38. Activated carbon filter layer; 39. Air outlet pipe; 40. Connecting pipe; 41. Flow guide hood; 42. Air inlet duct; 43. Electric valve; 44. Mounting plate; 45. Cross-flow fan. Detailed Implementation

[0039] The technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0040] In the description of this invention, it should be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0041] Reference Figures 1-12 A plasma desmearing machine for wafer processing includes a body 1, a vacuum pump 14, and a flow guide shroud 40. A lower cavity 4 is located at the top of the body 1, and an upper cavity 5 is hinged to the top of the body 1. A lower cavity groove 10 is formed on the inner side of the bottom end of the upper cavity 5, and a circular gas distribution plate 11 is installed at the top of the lower cavity groove 10. An upper cavity groove 12 is formed on the inner side of the top end of the upper cavity 5, and a circular gas distribution plate 13 is installed on the inner side of the upper cavity groove 12. A process gas inlet pipe 6 is connected to the top of the upper cavity 5, and a branch pipe 8 is connected to the outer side of the process gas inlet pipe 6. Both the manifold 8 and the branch pipe 8 are equipped with solenoid valves 9. The upper cavity 5 has a mounting slot 7 on its front. Several flow dividers 17 are fixedly installed at the bottom of the lower cavity 4. A water-cooled electrode seat 23 is installed on the top of the flow divider 17. A double vortex guide channel 20 is fixedly installed on the top of the water-cooled electrode seat 23. A circular water-cooled electrode plate 24 is movably sleeved on the outside of the water-cooled electrode seat 23. A sealing ring 27 is provided on the opposite sides of the outer edges of the circular water-cooled electrode plate 24 and the water-cooled electrode seat 23. A sealing ring 27 is provided on the outer sides of the opposite surfaces of the water-cooled electrode seat 23 and the circular water-cooled electrode plate 24. The input and output ends of the double-vortex guide channel 20 are both connected to the circulation channel 18. The bottom of the circulation channel 18 is connected to the water circulation component 26. The water circulation component 26 and the water-cooled electrode base 23 are provided with sealing rings 29 on opposite sides. The bottom of the lower cavity 4 is connected to the gas collection channel 19. The bottom of the gas collection channel 19 is connected to the connecting pipe 16. The outer side of the circular water-cooled electrode plate 24 is fixedly sleeved with a driven gear ring 21 by an insulating component. The outer side of the driven gear ring 21 is meshed with a drive gear 22. The bottom of the drive gear 22 is connected to a specially designed transmission connection. The drive motor 25 is connected to a shunt pipe 31 on one side of the connecting pipe 16. The bottom of the shunt pipe 31 is connected to a plasma reaction vessel 33. An annular electrode plate 34 is fixedly installed inside the plasma reaction vessel 33. A spare electrode head 35 is provided in the middle of the plasma reaction vessel 33. A connecting pipe 39 is connected to the bottom of the plasma reaction vessel 33. A filter canister 36 is connected to the bottom of the connecting pipe 39. An activated carbon filter layer 37 is provided inside the filter canister 36. An exhaust pipe 38 is connected to the bottom of the filter canister 36. A vacuum assembly 15 is connected to the bottom of the connecting pipe 16.

[0042] A mounting plate 43 is fixedly installed on one side of the flow guide 40, a cross-flow fan 44 is rotatably installed inside the flow guide 40, and an air intake duct 41 is connected to the back of the flow guide 40. An electric valve 42 is installed inside the air intake duct 41.

[0043] In this embodiment, during operation, the wafer to be processed is placed on top of the circular water-cooled electrode plate 24. Then, the upper cavity 5 is closed, locking the upper cavity 5 and lower cavity 4 together. A sealing ring seals the opposite sides of the lower cavity 4 and upper cavity 5. The process reaction gas then enters the interior of the upper cavity 5 through the process gas inlet pipe 6. First, it is uniformly guided through the micropores of the circular gas distribution plate 13, and then further uniformly guided through the micropores of the circular gas distribution plate 11. The gas is then evenly distributed around the wafer. Simultaneously, the circular water-cooled electrode plate 24 performs plasma ionization, etching the wafer with plasma resist removal. When the gas is discharged, it flows through the outer side of the circular water-cooled electrode plate 24 into the space of the distribution block 17, and is uniformly guided into the gas collection channel 19 through the circumferential limiting of the distribution block 17. Under the vacuum operation of the vacuum pump 14 and the vacuum pumping assembly 15, the gas is discharged through the connecting pipe 16, increasing the overall uniformity. The flip-type inner circular cavity upper cavity 5 is paired with a circular... The double-layered circular gas inlet plates 11 and 13 allow the process gas to diffuse twice. The perforation layout of the gas plates, with sparser holes in the center and denser holes around the edges, ensures more uniform gas intake. The process gas is dispersed by the gas plate in the upper cavity 5, and drawn in by the flow divider block 17 and gas collecting channel 19 in the lower cavity 4, making the gas intake more uniform throughout the cavity and indirectly improving the efficiency of plasma ionization. During etching, the circulating water from the water circulation component 26 flows through the circulating water channel 18 into the double vortex guide. The water flows through the input end of the flow channel 20 and is guided by a double vortex inside the double vortex guide channel 20. The water then flows through the circulation channel 18 at the output end and is introduced into the water circulation component 26 for water circulation. The water flow vortex circulation guide improves the cooling efficiency of water cooling. The circular water-cooled electrode plate 24 is equipped with a vortex-type water circuit design and a circulating cold water channel to ensure the uniformity of the electrode plate surface temperature and ensure the uniformity of the plasma density generated by the discharge, thereby achieving better etching rate and uniformity and indirectly improving the wafer processing efficiency.

[0044] The upper cavity groove 12 is located at the top of the lower cavity groove 10, and the first circular gas distribution plate 13 is located at the top of the second circular gas distribution plate 11. The input end of the process gas inlet pipe 6 is concentric with the top of the upper cavity 5. The lower cavity groove 10, the second circular gas distribution plate 11, the upper cavity groove 12, and the first circular gas distribution plate 13 are all concentric circles. There is a gap between the first circular gas distribution plate 13 and the upper cavity groove 12, and there is a gap between the first circular gas distribution plate 13 and the second circular gas distribution plate 11. Both the second circular gas distribution plate 11 and the first circular gas distribution plate 13 have ventilation micropores inside. These ventilation micropores are evenly distributed around the circumference, with a diameter of 0.5–1 mm and a porosity of 30%–50%. The diameter of the ventilation micropores on the first circular gas distribution plate 13 is larger than that on the second circular gas distribution plate 11, and the porosity of the ventilation micropores on the second circular gas distribution plate 11 is smaller than that on the first circular gas distribution plate 13.

[0045] In this embodiment, during the etching and resist removal process, the airflow is uniformly guided through the micropores of the circular gas distribution plate 13, and then further uniformly guided through the micropores of the circular gas distribution plate 11. The gas is then uniformly distributed around the wafer. When the gas is discharged, it flows into the space of the distribution block 17 through the outer side of the circular water-cooled electrode plate 24, and flows into the gas collection channel 19 uniformly through the circumferential limiting guidance of the distribution block 17, which increases the overall uniformity. The flip-type inner circular cavity upper cavity 5, together with the double-layer circular gas inlet distribution plates of the circular gas distribution plate 11 and the circular gas distribution plate 13, allows the process gas to diffuse twice. The hole layout of the distribution plate is sparse in the middle and dense around the perimeter for diffusion, making the gas intake more uniform. The process gas is dispersed by the gas distribution plate of the upper cavity 5, and the surrounding gas extraction of the distribution block 17 and the gas collection channel 19 in the lower cavity 4 makes the gas intake in the entire cavity more uniform, indirectly improving the efficiency of plasma ionization. By combining the design of the air intake structure, control of gas parameters, and optimization of the chamber environment, the gas enters the wafer desmearing chamber more uniformly and flows better.

[0046] The flow divider 17 is evenly distributed in a circle at the bottom of the lower cavity 4. The flow divider 17 and the gas collection channel 19 are concentric circles. One side of the connecting pipe 16 is connected to a vacuum gauge. An electrode connector is provided at the bottom of the lower cavity 4. The outer side of the flow divider 17 is the same size as the outer side of the circular water-cooled electrode plate 24. The circular water-cooled electrode plate 24 is electrically connected to the plasma generator power supply through the electrode connector.

[0047] In this embodiment, during the etching and resist removal operation, the airflow is uniformly guided through the micropores of the circular gas distribution plate 13, and then further uniformly guided through the micropores of the circular gas distribution plate 11, so that the gas is evenly distributed around the wafer. At the same time, the circular water-cooled electrode plate 24 performs plasma ionization to etch and remove the resist from the wafer. When the gas is discharged, it flows into the space of the diversion block 17 through the outside of the circular water-cooled electrode plate 24, and flows evenly to the gas collection channel 19 through the circumferential limiting and guiding of the diversion block 17, which increases the overall uniformity. The surrounding air extraction of the diversion block 17 and the gas collection channel 19 makes the air intake in the entire cavity more uniform, indirectly improving the efficiency of plasma ionization.

[0048] The top of the double vortex guide channel 20 is in sliding contact with the top of the inner cavity of the circular water-cooled electrode plate 24 through a thermally conductive silicone pad. The water circulation component 26 is fixedly inserted through the diverter block 17 and extends to the top of the inner cavity of the body 1. The specially designed drive motor 25 is fixedly installed at the bottom of the inner cavity of the lower cavity 4, and the connection between the specially designed drive motor 25 and the lower cavity 4 is insulated.

[0049] In this embodiment, the water circulation component 26 facilitates the circulation of water into the double vortex guide channel 20. The circulating water from the water circulation component 26 flows into the input end of the double vortex guide channel 20 through the circulating water channel 18, and after undergoing double vortex guidance inside the double vortex guide channel 20, it is introduced into the water circulation component 26 through the circulating water channel 18 at the output end for water circulation. The vortex-shaped circulation guide improves the cooling efficiency of water cooling. The circular water-cooled electrode plate 24, combined with the vortex-shaped water circuit design and the circulating cold water channel, ensures the uniformity of the electrode plate surface temperature, ensures the uniformity of the plasma density generated by the discharge, achieves better etching rate and uniformity, and indirectly improves the wafer processing efficiency. The top of the double-vortex guide channel 20 is connected to the circular water-cooled electrode plate 24 via a fixedly installed thermally conductive silicone pad, which restricts the water flow inside the double-vortex guide channel 20. Heat is conducted through the thermally conductive silicone pad and the circular water-cooled electrode plate 24. This design features a smooth, temperature-resistant surface and a thermal conductivity that can be improved from 0.2 W / (m²) for pure silicone. K) increased to 0.8–10 W / (m K) Adjustable according to filler type and content, without affecting insulation performance and surface smoothness. Applicable scenarios include anti-slip insulation layers for wafer carriers, heat dissipation pads for semiconductor devices, and insulating and thermally conductive components for electronic component packaging. During the process gas flow splitting and wafer contact and cleaning process, a special drive motor 25 is activated, which drives the drive gear 22 to rotate, causing the driven gear ring 21 to rotate, which in turn drives the circular water-cooled electrode plate 24 to rotate. This allows the circular water-cooled electrode plate 24 to be adjusted in position when carrying the wafer, and rotates at a low speed of 5-10 rpm, causing the gas to form a thin layer flow on the wafer surface, improving local uniformity. This, combined with circumferential exhaust, further increases the uniformity of airflow and ensures a uniform gas distribution.

[0050] The plasma reaction vessel 33 and the filter vessel 36 are fixedly connected by bolts and flanges. The end of the outlet pipe 38 away from the filter vessel 36 is connected to the bottom end of the connecting pipe 16. Solenoid valve 32 is installed inside both the diversion pipe 31 and the outlet pipe 38. Two solenoid valves 30 are installed inside the connecting pipe 16. The two solenoid valves 30 are located on opposite sides of the diversion pipe 31 and the outlet pipe 38. The plasma reaction vessel 33 and the filter vessel 36 are fixed inside the body 1 by brackets. The input end of the vacuum pump 14 is connected to the output end of the vacuum pumping assembly 15 through a pipe.

[0051] In this embodiment, if the colloid on the wafer is thick and the removal of the colloid generates a large amount of pollutants, the solenoid valve 30 is closed and the solenoid valve 32 is opened. The discharged gas is introduced into the plasma reaction tank 33 through the diversion pipe 31 and powered by the plasma generator to the annular electrode plate 34. If the gas in the plasma reaction tank 33 contains some complex organic pollutants, it undergoes further plasma decomposition. Through secondary plasma discharge, the organic pollutants are decomposed into harmless small molecules such as CO2 and H2O, while the chemical structure of corrosive gases is destroyed. After further plasma decomposition, the gas is introduced into the filter tank 36 through the connecting pipe 39. After being adsorbed by the activated carbon filter layer 37, the porous structure of the activated carbon is used to physically adsorb the small organic molecules and intercept some tiny particulate matter, thereby reducing the emissions from the removal of the colloid and increasing environmental friendliness.

[0052] The mounting plate 43 is adapted to the size of the mounting slot 7. The mounting plate 43 is connected to the outside of the mounting slot 7 by a sealing ring and bolts. An airflow guide plate assembly is installed on the outside of the cross-flow fan 44.

[0053] In this implementation scheme, if it is necessary to purge the chambers of the lower cavity 4 and the upper cavity 5, the solenoid valve 9 is closed, and gas enters the interior of the guide shroud 40 through the air inlet duct 41. At this time, the cross-flow fan 44 rotates, causing the airflow to blow into the interior of the chambers of the lower cavity 4 and the upper cavity 5. Simultaneously, the solenoid valve 9 inside the branch pipe 8 is opened, and the gas purges the interior of the lower cavity 4 and the upper cavity 5 at a flow rate of 5-10 L / min for 3-5 minutes, removing residual impurities and trace amounts of moisture, thereby increasing cleanliness and reducing the impact of heavy wafer desmearing operations on subsequent processes, indirectly increasing the cleanliness of the wafer desmearing process. The airflow guide plate assembly of the cross-flow fan 44 is a structural component that includes an active airflow adjustment scheme and a closed-off effect, facilitating uniform purging of the interior of the lower cavity 4 and the upper cavity 5, similar to an air conditioning vent. Combined with the closed-off structure, it reduces the impact on the operation and enhances the structural effectiveness.

[0054] Among them, a sealing ring 401 is fixedly installed on the outer side of the top of the lower cavity 4, and the upper cavity 5 is rotatably installed on the top of the machine body 1 through a gas strut and a hinge seat. The specifications and dimensions of the lower cavity 4 are compatible with those of the upper cavity 5.

[0055] In this embodiment, sealing ring 401 seals the opposite sides of the upper cavity 5 and the lower cavity 4, thereby ensuring the stability of the structure. The upper cavity 5, through gas struts and hinge seats, adopts existing technology and can be opened and closed stably, making it convenient for operators to open and place, indirectly increasing the effectiveness of use.

[0056] The machine body 1 has an operating interface 3 installed at the top front, and maintenance doors 2 installed on both sides of the machine body 1.

[0057] In this implementation scheme, the output end of the operation interface 3 is electrically connected to the input ends of the solenoid valve 1 9, vacuum pump 14, vacuum assembly 15, circular water-cooled electrode plate 24, special drive motor 25, solenoid valve 2 30, solenoid valve 32, annular electrode plate 34, spare electrode head 35, electric valve 42 and cross-flow fan 44 via wires. The input end of the operation interface 3 is connected to the vacuum gauge via wires. The operation interface 3 device adopts PLC control for equipment operation and functions such as ion power supply triggering, vacuum pump 14 start and stop. The touch screen can set and change relevant parameters. The maintenance door 2 facilitates the inspection and maintenance of the inner wall structure of the machine body 1, and is easy to clean and replace.

[0058] A plasma resist removal method for wafer fabrication, comprising the following steps, using a plasma resist removal machine for wafer fabrication:

[0059] S1. During operation, connect the process gas inlet pipe 6 to the process reaction gas outlet pipe, and connect the branch pipe 8 to the high-purity nitrogen outlet pipe with a purity ≥99.999%. Install the flow guide shroud 40 on the outside of the mounting slot 7 using the mounting plate 43 and bolts. Then, connect the inlet pipe 41 to the high-purity nitrogen outlet pipe. Connect the input end of the vacuum pump 14 to the output end of the vacuum assembly 15. Connect the water circulation assembly 26 to the water cooling circulation equipment. After the setup is complete, place the wafer to be processed on top of the circular water-cooled electrode plate 24.

[0060] S2. Next, the upper cavity 5 is closed, and the upper cavity 5 and lower cavity 4 are locked together. The opposite sides of the lower cavity 4 and upper cavity 5 are sealed by a sealing ring. Then, the process reaction gas enters the interior of the upper cavity 5 through the process gas inlet pipe 6. First, it is uniformly guided through the micropores of the circular gas distribution plate 13, and then further uniformly guided through the micropores of the circular gas distribution plate 11. Then, the gas is evenly distributed around the wafer. At the same time, the circular water-cooled electrode plate 24 performs plasma ionization to perform plasma resist removal and etching on the wafer. When the gas is discharged, it flows into the space of the distribution block 17 through the outside of the circular water-cooled electrode plate 24 and passes through the distribution block. The gas flows evenly into the gas collecting channel 19 through the circumferential limiting guide of 17. Under the vacuum operation of vacuum pump 14 and vacuum pumping assembly 15, the gas is discharged through connecting pipe 16, which increases the overall uniformity. The upper cavity 5 of the flip-top inner circular cavity, together with the double-layer circular gas inlet plate of circular gas distribution plate 2 11 and circular gas distribution plate 13, allows the process gas to diffuse twice. The hole layout of the gas distribution plate is sparse in the middle and dense around the perimeter for diffusion, making the gas intake more uniform. The process gas is dispersed by the gas distribution plate of the upper cavity 5. The surrounding gas extraction of the flow block 17 and gas collecting channel 19 in the lower cavity 4 makes the gas intake in the entire cavity more uniform, indirectly improving the efficiency of plasma ionization.

[0061] S3. During etching, the circulating water from the water circulation component 26 flows into the input end of the double vortex guide channel 20 through the circulating water channel 18. After undergoing double vortex guidance inside the double vortex guide channel 20, it is introduced into the water circulation component 26 through the circulating water channel 18 at the output end for water circulation. The vortex-shaped circulation guide improves the cooling efficiency of water cooling. The circular water-cooled electrode plate 24, combined with the vortex-type water circuit design and the circulating cold water channel, ensures the uniformity of the electrode plate surface temperature and ensures the uniformity of the plasma density generated by the discharge, achieving better etching rate and uniformity, and indirectly improving the wafer processing efficiency.

[0062] S4. During the operation, if the colloid on the wafer is thick and the desmearing process generates a lot of contaminants, the solenoid valve 2 (30) is closed and the solenoid valve 32 (32) is opened. The discharged gas is introduced into the plasma reaction tank 33 through the diverter pipe 31 and powered by the plasma generator to the annular electrode plate 34. If there are some complex organic pollutants in the gas inside the plasma reaction tank 33, further plasma decomposition is performed. Through secondary plasma discharge, the organic pollutants are decomposed into harmless small molecules such as CO2 and H2O, while destroying the chemical structure of corrosive gases. After further plasma decomposition, the gas is introduced into the filter tank 36 through the connecting pipe 39. After being adsorbed by the activated carbon filter layer 37, the porous structure of the activated carbon is used to physically adsorb the small organic molecules and intercept some tiny particles, thereby reducing the emissions from the desmearing process and increasing environmental friendliness.

[0063] S5. After long-term operation, if it is necessary to purge the chambers of the lower cavity 4 and the upper cavity 5, the solenoid valve 9 is closed, and the gas enters the guide shroud 40 through the air inlet duct 41. At this time, the cross-flow fan 44 rotates and causes the airflow to blow into the chambers of the lower cavity 4 and the upper cavity 5. In conjunction with the opening of the solenoid valve 9 inside the branch pipe 8, the gas purges the chambers of the lower cavity 4 and the upper cavity 5 at a flow rate of 5-10L / min for 3-5 minutes, removing residual impurities and trace amounts of moisture, thereby increasing cleanliness, reducing the impact of heavy wafer desmearing operations on subsequent processes, and indirectly increasing the cleanliness of the wafer desmearing process.

[0064] S6. Finally, during operation, the process gas flow splitting and wafer contact and cleaning process can be activated by a special drive motor 25. The special drive motor 25 drives the drive gear 22 to rotate, causing the driven gear ring 21 to rotate, which in turn drives the circular water-cooled electrode plate 24 to rotate. This allows the circular water-cooled electrode plate 24 to be adjusted in position when carrying the wafer, and rotates at a low speed of 5-10 rpm, causing the gas to form a thin layer flow on the wafer surface, improving local uniformity. This, combined with the circumferential exhaust, increases the uniformity of the airflow, further ensuring the uniformity of gas distribution.

[0065] To further clarify, the aforementioned fixed connection should be interpreted broadly unless otherwise explicitly specified and limited. For example, it may be welding, gluing, or integral molding, or other conventional methods well known to those skilled in the art.

[0066] The above description is only a preferred embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention, based on the technical solution and inventive concept of the present invention, should be covered within the scope of protection of the present invention.

Claims

1. A plasma desmearing machine for wafer processing, comprising a body (1), a vacuum pump (14), and a flow guide (40), characterized in that: The top of the body (1) is provided with a lower cavity (4), and the top of the body (1) is hinged to an upper cavity (5). A lower cavity groove (10) is opened on the inner side of the bottom end of the upper cavity (5). A circular gas distribution plate II (11) is installed at the top of the lower cavity groove (10). An upper cavity groove (12) is opened on the inner side of the top end of the upper cavity (5). A circular gas distribution plate I (13) is installed on the inner side of the upper cavity groove (12). The top of the upper cavity (5) is connected to a process gas inlet pipe (6). A gas filler is installed on the front of the upper cavity (5). The slot (7) is filled with a plurality of diverter blocks (17) fixedly installed at the bottom of the inner cavity of the lower cavity (4). A water-cooled electrode seat (23) is provided on the top of the diverter block (17). A double vortex guide channel (20) is fixedly installed on the top of the water-cooled electrode seat (23). A circular water-cooled electrode plate (24) is movably sleeved on the outer side of the water-cooled electrode seat (23). A sealing ring II (27) is provided on the opposite side of the outer edge of the circular water-cooled electrode plate (24) and the water-cooled electrode seat (23). The input end and output end of the double vortex guide channel (20) are connected to the slot (7). All ends are connected to a circulating water channel (18), the bottom of which is connected to a water circulation component (26). The bottom of the inner cavity of the lower cavity (4) is connected to an air collection channel (19), the bottom of which is connected to a connecting pipe (16). The outer side of the circular water-cooled electrode plate (24) is fixedly sleeved with a driven gear ring (21) by an insulating component. The outer side of the driven gear ring (21) is meshed with a drive gear (22). The bottom of the drive gear (22) is connected to a special drive motor (25). One side of the connector (16) is connected to a shunt pipe (31), the bottom of the shunt pipe (31) is connected to a plasma reaction vessel (33), an annular electrode plate (34) is fixedly installed inside the plasma reaction vessel (33), a spare electrode head (35) is provided in the middle part of the plasma reaction vessel (33), a connecting pipe (39) is connected to the bottom end of the plasma reaction vessel (33), a filter canister (36) is connected to the bottom end of the connecting pipe (39), and an activated carbon filter layer (37) is provided inside the filter canister (36). A mounting plate (43) is fixedly installed on one side of the flow guide (40), a cross-flow fan (44) is rolled inside the flow guide (40), an air intake duct (41) is connected to the back of the flow guide (40), and an electric valve (42) is installed inside the air intake duct (41).

2. The plasma desmearing machine for wafer processing according to claim 1, characterized in that: The process gas inlet pipe (6) is connected to a branch pipe (8) on the outside. Solenoid valve 1 (9) is installed inside both the process gas inlet pipe (6) and the branch pipe (8). The upper cavity groove (12) is located at the top of the lower cavity groove (10). The circular gas distribution plate 1 (13) is located at the top of the circular gas distribution plate 2 (11). The input end of the process gas inlet pipe (6) and the top end of the upper cavity (5) are concentric circles. The lower cavity groove (10), the circular gas distribution plate 2 (11), the upper cavity groove (12), and the circular gas distribution plate 1 (13) are all concentric circles. The circular gas distribution plate 1 (12) is located at the top of the lower cavity groove (10), the circular gas distribution plate 2 (11), the upper cavity groove (12), and the circular gas distribution plate 1 (13) are all concentric circles. 3) A gap is left between the upper cavity groove (12) and the circular air distribution plate one (13) and the circular air distribution plate two (11). Both the circular air distribution plate two (11) and the circular air distribution plate one (13) are provided with ventilation micro-holes. The ventilation micro-holes are evenly distributed in a circle, and the diameter is 0.5-1mm. The porosity is 30%-50%. The diameter of the ventilation micro-holes in the circular air distribution plate one (13) is larger than that in the circular air distribution plate two (11). The porosity of the ventilation micro-holes in the circular air distribution plate two (11) is smaller than that in the circular air distribution plate one (13).

3. The plasma desmearing machine for wafer processing according to claim 1, characterized in that: A sealing ring (28) is provided on the outer side of the opposite face of the water-cooled electrode holder (23) and the circular water-cooled electrode plate (24). The diverter block (17) is evenly distributed in a circle at the bottom of the inner cavity of the lower cavity (4). The diverter block (17) and the gas collection channel (19) are concentric circles. A vacuum gauge is connected to one side of the connecting pipe (16). An electrode connector is provided at the bottom of the lower cavity (4). The outer side of the diverter block (17) is the same size as the outer side of the circular water-cooled electrode plate (24). The circular water-cooled electrode plate (24) is electrically connected to the plasma generator power supply through the electrode connector.

4. The plasma desmearing machine for wafer processing according to claim 1, characterized in that: The water circulation assembly (26) and the water-cooled electrode seat (23) are provided with sealing rings four (29) on opposite sides. The top of the double vortex guide channel (20) slides in contact with the top of the inner cavity of the circular water-cooled electrode plate (24) through a thermally conductive silicone pad. The water circulation assembly (26) is fixedly inserted through the diverter block (17) and extends to the top of the inner cavity of the body (1). The special drive motor (25) is fixedly installed at the bottom of the inner cavity of the lower cavity (4), and the connection between the special drive motor (25) and the lower cavity (4) is insulated.

5. A plasma desmearing machine for wafer processing according to claim 2, characterized in that: The bottom of the filter canister (36) is connected to the outlet pipe (38), and the bottom of the connecting pipe (16) is connected to the vacuum assembly (15). The plasma reaction tank (33) and the filter canister (36) are fixedly connected by bolts and flanges. The end of the outlet pipe (38) away from the filter canister (36) is connected to the bottom of the connecting pipe (16). Solenoid valve three (32) is installed inside the diversion pipe (31) and the outlet pipe (38). Two solenoid valve two (30) is installed inside the connecting pipe (16). The two solenoid valve two (30) are located on opposite sides of the diversion pipe (31) and the outlet pipe (38). The plasma reaction tank (33) and the filter canister (36) are fixed inside the body (1) by brackets. The input end of the vacuum pump (14) is connected to the output end of the vacuum assembly (15) through a pipe.

6. The plasma desmearing machine for wafer processing according to claim 1, characterized in that: The mounting plate (43) is adapted to the size of the mounting slot (7). The mounting plate (43) is connected to the outside of the mounting slot (7) by a sealing ring and bolts. An airflow guide plate assembly is provided on the outside of the cross-flow fan (44).

7. A plasma desmearing machine for wafer processing according to claim 1, characterized in that: A sealing ring (401) is fixedly installed on the outer side of the top of the lower cavity (4). The upper cavity (5) is rotatably installed on the top of the machine body (1) through a gas strut and a hinge seat. The specifications and dimensions of the lower cavity (4) are compatible with those of the upper cavity (5).

8. A plasma desmearing machine for wafer processing according to claim 1, characterized in that: An operating interface (3) is installed on the top of the front of the body (1), and maintenance doors (2) are installed on both sides of the body (1).

9. A plasma resist removal method for wafer processing, characterized in that: The application of a plasma desmearing machine for wafer processing as described in claim 5 includes the following steps: S1. During operation, connect the process gas inlet pipe (6) to the process reaction gas outlet pipe, connect the branch pipe (8) to the high-purity nitrogen outlet pipe, install the flow guide (40) on the outside of the mounting slot (7), then connect the inlet pipe (41) to the nitrogen outlet pipe, connect the input end of the vacuum pump (14) to the output end of the vacuum assembly (15), connect the water circulation assembly (26) to the water cooling circulation equipment, and after the layout is completed, place the wafer to be processed on the top of the circular water-cooled electrode plate (24). S2. Then the upper cavity (5) and lower cavity (4) are closed and locked. Then the process reaction gas enters the interior of the upper cavity (5). First, it is uniformly guided through the micro-holes of the first circular gas distribution plate (13). Then it is further uniformly guided through the micro-holes of the second circular gas distribution plate (11). Then the gas is uniformly distributed on the periphery of the wafer. At this time, the circular water-cooled electrode plate (24) performs plasma ionization operation to perform plasma desmearing and etching on the wafer. When the gas is discharged, it flows into the space of the distribution block (17) through the outside of the circular water-cooled electrode plate (24) and flows into the interior of the gas collection channel (19) through the circumferential limiting guidance of the distribution block (17). Under the vacuum operation, the gas is discharged through the connecting pipe (16). The double-layer circular gas inlet plates of the second circular gas distribution plate (11) and the first circular gas distribution plate (13) allow the process gas to diffuse twice. The hole layout of the gas distribution plate is sparse in the middle and dense around the periphery for diffusion, making the gas intake more uniform and the gas intake in the entire cavity more uniform. S3. During etching, the circulating water of the water circulation component (26) flows into the input end of the double vortex guide channel (20) through the circulating water channel (18), and after double vortex guidance inside the double vortex guide channel (20), it is introduced into the water circulation component (26) through the circulating water channel (18) at the output end for water circulation. The cooling efficiency of water cooling is improved by the vortex-shaped circulation guidance of water flow. The circular water-cooled electrode plate (24) is equipped with a vortex-type water circuit design and a circulating cold water channel to ensure the uniformity of the electrode plate surface temperature and ensure the uniform density of plasma generated by discharge. S4. During the operation, if the colloid on the wafer is thick and generates a lot of contaminants, close the second solenoid valve (30) and open the third solenoid valve (32). The discharged gas is introduced into the plasma reaction tank (33) through the diversion pipe (31) and powered by the plasma generator to the ring electrode plate (34). The plasma reaction tank (33) further decomposes the organic contaminants through the secondary plasma discharge. The gas is introduced into the filter tank (36) through the connecting pipe (39) and adsorbed by the activated carbon filter layer (37). The porous structure of the activated carbon will be used to physically adsorb small organic molecules and intercept some small particles. S5. After long-term operation, if it is necessary to purge the chambers of the lower cavity (4) and the upper cavity (5), close the solenoid valve (9), and the gas enters the guide hood (40) through the air inlet pipe (41). At this time, the cross-flow fan (44) rotates and causes the airflow to blow into the chambers of the lower cavity (4) and the upper cavity (5). In conjunction with the opening of the solenoid valve (9) inside the branch pipe (8), the gas purges the chambers of the lower cavity (4) and the upper cavity (5) at a flow rate of 5-10L / min for 3-5 minutes to remove residual impurities and trace amounts of water vapor, thereby improving cleanliness. S6. Finally, during the operation, the process gas flow splitting and wafer contact and cleaning process, the special drive motor (25) is started. The special drive motor (25) drives the drive gear (22) to rotate, causing the driven gear ring (21) to rotate, which in turn drives the circular water-cooled electrode plate (24) to rotate. This makes it convenient for the circular water-cooled electrode plate (24) to adjust the working position when carrying the wafer, and rotates at a low speed of 5-10 rpm, causing the gas to form a thin layer flow on the wafer surface, improving local uniformity, and increasing the uniformity of airflow in conjunction with the circumferential exhaust.

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