Display panel and display device

Abstract

The invention relates to the technical field of display, and discloses a display panel and a display device. The display panel comprises a substrate and at least three sub-pixels, the at least three sub-pixels are arranged on one side of the substrate, each sub-pixel comprises a first electrode, each first electrode comprises a reflection conducting layer, a dielectric layer and a transparent conducting layer which are sequentially arranged in a stacked mode, the difference value of the thicknesses of the first electrodes of every two adjacent sub-pixels is smaller than or equal to 200 angstroms, and the refractive indexes of the dielectric layers of the at least three sub-pixels are different from one another. The display panel improves the purity of the spectrum, and improves the color gamut and the display effect.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of display, in particular, to a display panel and a display device. BACKGROUND

[0002] Silicon-based organic light-emitting diode (OLED) has the characteristics of high contrast, high response speed and high PPI, and can be applied in the fields of physics, chemistry, materials science, optoelectronics, microelectronics, electronic information and optics.

[0003] However, the optical purity of the silicon-based organic light-emitting diode display panel is low, and the color gamut is low.

[0004] It should be noted that the information disclosed in the above background section is only used to strengthen the understanding of the background of the present disclosure, and therefore can include information that does not constitute prior art known to those of ordinary skill in the art. SUMMARY

[0005] The purpose of the present disclosure is to overcome the shortcomings of the prior art and provide a display panel and a display device.

[0006] According to one aspect of the present disclosure, a display panel is provided, comprising:

[0007] a substrate substrate;

[0008] at least three sub-pixels arranged on one side of the substrate substrate, the sub-pixel comprising a first electrode, the first electrode comprising a reflective conductive layer, a dielectric layer and a transparent conductive layer arranged in sequence, the difference between the thicknesses of the first electrodes of two adjacent sub-pixels being less than or equal to 200 angstroms, and the refractive indexes of the dielectric layers of the at least three sub-pixels being different from each other.

[0009] In an exemplary embodiment of the present disclosure, the thicknesses of the first electrodes of the at least three sub-pixels are the same.

[0010] In an exemplary embodiment of the present disclosure, the thicknesses of the dielectric layers of the at least three sub-pixels are the same, the thicknesses of the reflective conductive layers of the at least three sub-pixels are the same, and the thicknesses of the transparent conductive layers of the at least three sub-pixels are the same.

[0011] In an exemplary embodiment of the present disclosure, the thickness of the dielectric layer is greater than or equal to 500 angstroms and less than or equal to 2000 angstroms.

[0012] In an example embodiment of the present disclosure, at least three sub-pixels include a first sub-pixel, a second sub-pixel, and a third sub-pixel; a first electrode of the first sub-pixel is a first pixel electrode, a first electrode of the second sub-pixel is a second pixel electrode, and a first electrode of the third sub-pixel is a third pixel electrode; the first pixel electrode, the second pixel electrode, and the third pixel electrode are insulatively and spacedly arranged; the first pixel electrode includes a first reflective conductive layer, a first dielectric layer, and a first transparent conductive layer which are sequentially stacked; the second pixel electrode includes a second reflective conductive layer, a second dielectric layer, and a second transparent conductive layer which are sequentially stacked; and the third pixel electrode includes a third reflective conductive layer, a third dielectric layer, and a third transparent conductive layer which are sequentially stacked.

[0013] In an example embodiment of the present disclosure, the sub-pixel further includes:

[0014] a light-emitting layer group arranged on a side of the first pixel electrode, the second pixel electrode, and the third pixel electrode away from the substrate;

[0015] a second electrode arranged on a side of the light-emitting layer group away from the substrate;

[0016] In the third direction, a first optical cavity is between a side of the second electrode close to the substrate and a side of the first reflective conductive layer away from the substrate, a second optical cavity is between a side of the second electrode close to the substrate and a side of the second reflective conductive layer away from the substrate, and a third optical cavity is between a side of the second electrode close to the substrate and a side of the third reflective conductive layer away from the substrate;

[0017] An optical path H1 of the first optical cavity satisfies:

[0018]

[0019] wherein m1 is a positive integer, n1 i is a refractive index of each film layer in the first optical cavity, d1 i is a thickness of each film layer in the first optical cavity, and λ1 is a center wavelength of the first sub-pixel;

[0020] An optical path H2 of the second optical cavity satisfies:

[0021]

[0022] wherein m2 is a positive integer, n2 i is a refractive index of each film layer in the second optical cavity, d2 i is a thickness of each film layer in the second optical cavity, and λ2 is a center wavelength of the second sub-pixel.

[0023] An optical path H3 of the third optical cavity satisfies:

[0024]

[0025] wherein m3 is a positive integer, n3 i is a refractive index of each film layer in the third optical cavity, d3i is a thickness of each film layer in the third optical cavity, and λ3 is a center wavelength of the third sub-pixel.

[0026] In an example embodiment of the present disclosure, the m1 is equal to the m3, and the m2 is greater than the m1; the wavelength of the third sub-pixel is greater than the wavelength of the first sub-pixel, and the wavelength of the first sub-pixel is greater than the wavelength of the second sub-pixel.

[0027] In an example embodiment of the present disclosure, a difference between the optical path of the second optical cavity and the optical path of the first optical cavity is greater than or equal to 500 angstroms and less than or equal to 1000 angstroms, and an absolute value of a difference between the optical path of the third optical cavity and the optical path of the first optical cavity is greater than or equal to 200 angstroms and less than or equal to 700 angstroms.

[0028] In an example embodiment of the present disclosure, the optical path of the first optical cavity is greater than or equal to 5200 angstroms and less than or equal to 5400 angstroms, the optical path of the second optical cavity is greater than or equal to 5800 angstroms and less than or equal to 6000 angstroms, and the optical path of the third optical cavity is greater than or equal to 5750 angstroms and less than or equal to 5950 angstroms.

[0029] In an example embodiment of the present disclosure, the refractive index of the first dielectric layer is greater than or equal to 1.3 and less than or equal to 1.6, the refractive index of the second dielectric layer is greater than or equal to 1.73 and less than or equal to 2.03, and the refractive index of the third dielectric layer is greater than or equal to 1.71 and less than or equal to 2.01.

[0030] In an example embodiment of the present disclosure, a thickness of the light-emitting layer group is greater than or equal to 1200 angstroms and less than or equal to 3000 angstroms.

[0031] In an example embodiment of the present disclosure, the light-emitting layer group comprises:

[0032] a first light-emitting structure disposed on a side of the first electrode away from the substrate;

[0033] a charge generation layer disposed on a side of the first light-emitting structure away from the substrate;

[0034] a second light-emitting structure disposed on a side of the charge generation layer away from the substrate;

[0035] The display panel further comprises:

[0036] An undercut structure is arranged on the side of the first pixel electrode, the second pixel electrode and the third pixel electrode away from the substrate, and is located between two adjacent sub-pixels. The light-emitting layer group is arranged on the side of the undercut structure away from the substrate, and the undercut structure is used to separate the charge generation layers of two adjacent sub-pixels.

[0037] In an exemplary embodiment of the present disclosure, the first dielectric layer is provided with a first via hole, and the first transparent conductive layer is connected to the first reflective conductive layer through the first via hole; the second dielectric layer is provided with a second via hole, and the second transparent conductive layer is connected to the second reflective conductive layer through the second via hole; and the third dielectric layer is provided with a third via hole, and the third transparent conductive layer is connected to the third reflective conductive layer through the third via hole.

[0038] In an exemplary embodiment of the present disclosure, the display panel further comprises:

[0039] An insulating isolation structure is arranged between adjacent first pixel electrodes, second pixel electrodes and third pixel electrodes to insulate and separate the first pixel electrodes, the second pixel electrodes and the third pixel electrodes.

[0040] The substrate includes a plurality of arrayed driving circuits, and the first pixel electrode, the second pixel electrode and the third pixel electrode are electrically connected to the driving circuits one by one.

[0041] According to another aspect of the present disclosure, a display device is provided, characterized in that comprising the display panel of any one of the above.

[0042] The display panel of the present disclosure, on the one hand, the difference between the thicknesses of the first electrodes of two adjacent sub-pixels is less than or equal to 200 angstroms, thereby reducing the height of the difference on the side of the first electrode away from the substrate, and further reducing the difference in the light-emitting layer group, reducing or even avoiding the difference in the light-emitting layer group extending to the display area of each sub-pixel, reducing or even avoiding the difference in the light spectrum of the light-emitting layer group, improving the purity of the spectrum, improving the color gamut and display effect. On the other hand, the refractive indexes of the dielectric layers of the at least three sub-pixels are different from each other, and in the case that the thicknesses of the first electrodes of the three sub-pixels are not much different, the optical path lengths in the optical cavities of the three sub-pixels are different, so as to match the spectral peaks of the red, green and blue light, so that the coupling of the three colors of light of the three sub-pixels can meet the requirement of high efficiency.

[0043] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present disclosure. BRIEF DESCRIPTION OF DRAWINGS

[0044] The accompanying drawings, which are incorporated herein and constitute part of the specification, illustrate embodiments consistent with the present disclosure and, together with the description, further serve to explain the principles of the present disclosure. It is to be understood that the drawings are only schematic, and that they do not purport to be to scale with respect to one another. The embodiments will be described with reference to the drawings in conjunction with a detailed description as follows.

[0045] Figure 1 A schematic diagram of a structure of a display panel in the related art.

[0046] Figure 2 A schematic diagram of a comparison between a center wavelength at a step and a center wavelength at a middle position of a blue sub-pixel.

[0047] Figure 3 A schematic diagram of a structure of an example embodiment of a display panel of the present disclosure.

[0048] Figure 4 A schematic diagram of a structure of a display panel of the present disclosure. Figure 3 A schematic diagram of a structure of a substrate.

[0049] Figure 5 A schematic diagram of a structure of a display panel of the present disclosure. Figure 3 A schematic diagram of a structure of a light-emitting layer group.

[0050] Figure 6 A schematic diagram of a structure of a display panel of the present disclosure. Figure 3 A schematic diagram of a structure of a light-emitting layer group of the present disclosure.

[0051] Explanation of reference signs:

[0052] 1, substrate; T, transistor; 11, active region; 12, gate electrode; 13, source electrode; 14, drain electrode; 15, gate electrode connection portion; 16, source electrode connection portion; 17, drain electrode connection portion; 18, tungsten via;

[0053] 2, sub-pixel; 21, first electrode; 211, reflective conductive layer; 212, dielectric layer; 213, transparent conductive layer; 22, light-emitting layer group; 221, first light-emitting structure; 2211, first hole injection layer; 2212, first hole transport layer; 2213, first light-emitting layer; 2214, second light-emitting layer; 2215, first electron transport layer; 222, charge generation layer; 223, second light-emitting structure; 2231, second hole injection layer; 2232, second hole transport layer; 2233, third light-emitting layer; 2234, second electron transport layer; 2235, electron injection layer; 23, second electrode;

[0054] 2G, first sub-pixel; 2G1, first pixel electrode; 2G11, first reflective conductive layer; 2G12, first dielectric layer; 2G121, first via hole; 2G13, first transparent conductive layer;

[0055] 2B, second sub-pixel; 2B1, second pixel electrode; 2B11, second reflective conductive layer; 2B12, second dielectric layer; 2B121, second via hole; 2B13, second transparent conductive layer;

[0056] 2R, third sub-pixel; 2R1, third pixel electrode; 2R11, third reflective conductive layer; 2R12, third dielectric layer; 2R121, third via hole; 2R13, third transparent conductive layer;

[0057] Q1, first optical cavity; Q2, second optical cavity; Q3, third optical cavity;

[0058] 3, insulating isolation structure; 31, first part; 32, second part;

[0059] 4, undercut structure; 41, first film layer; 42, second film layer;

[0060] 5, encapsulation layer;

[0061] 6, color filter layer; 61, black matrix; 62R, red color filter; 62G, green color filter; 62B, blue color filter;

[0062] 7, cover plate;

[0063] Z, third direction. DETAILED DESCRIPTION

[0064] Example embodiments now will be described more fully hereinafter with reference to the accompanying drawings. Example embodiments, may, however, be implemented in many different forms and should not be construed as limited to the implementations set forth herein; rather, these implementations are provided so that this disclosure will be thorough and complete, and will fully convey the scope of example embodiments to those skilled in the art. Like reference numerals refer to like elements throughout the description. Additionally, the figures are not necessarily drawn to scale.

[0065] Although relative terms are used herein, such as "upper", "lower", to describe one component's relationship to another component of the icon, these terms are used herein solely for convenience, e.g., with reference to the example shown in the drawings. It will be understood that if the icon device is turned over so that the upper becomes the lower, as recited, the components recited as "upper" will become the components recited as "lower". When a structure is "on" another structure, it can mean that the structure is formed integrally with the other structure, or that the structure is "directly" on the other structure, or that the structure is "indirectly" on the other structure via another structure.

[0066] The terms "one", "a", "an", "the", and "at least one" are used to mean that "one or more" of something is present; the terms "comprising", "having", and "including" are used to mean "including, but not limited to"; and the term "consisting essentially of" means "including at least the recited elements, and any additional elements as are necessary to practice the described concepts.

[0067] In the present application, unless specifically defined otherwise and limited, the term "connected" should be understood broadly, for example, "connected" can be fixedly connected, or detachably connected, or integrated; can be directly connected, or indirectly connected through an intermediate medium. "And / or", is only a description of the relationship between the associated objects, which means that there can be three kinds of relationships, for example, A and / or B, which can represent: A exists alone, A and B exist together, B exists alone. In addition, the character " / " in this paper generally represents that the front and rear associated objects are a "or" relationship.

[0068] The example embodiments of the present disclosure provide a display panel, referring to Figures 3-6 The display panel can include a substrate 1 and at least three sub-pixels 2, the at least three sub-pixels 2 are arranged on one side of the substrate 1, the sub-pixel 2 can include a first electrode 21, the first electrode 21 can include a reflective conductive layer 211, a dielectric layer 212 and a transparent conductive layer 213 which are sequentially stacked, the difference between the thicknesses of the first electrodes 21 of two adjacent sub-pixels 2 is less than or equal to 200 angstroms, and the refractive indexes of the dielectric layers 212 of the at least three sub-pixels 2 are different from each other.

[0069] The display panel of the present disclosure, on the one hand, reduces the height of the difference in the thickness of the first electrode 21 of the two adjacent sub-pixels 2, thereby reducing the difference in the first electrode 21 away from the substrate 1, and further reducing the difference in the light-emitting layer group 22, reducing or even avoiding the difference in the light-emitting layer group 22 extending to the display area of each sub-pixel 2, reducing or even avoiding the difference in the light spectrum of the light-emitting layer group 22, improving the purity of the spectrum, improving the color gamut and display effect. On the other hand, the refractive index of the dielectric layer 212 of at least three sub-pixels 2 is different from each other, and the thickness of the first electrode 21 of the three sub-pixels 2 is not much different, so that the optical path in the optical cavity of the three sub-pixels 2 is different, so as to match the spectral peak of the red, green and blue light, so that the coupling of the three colors of light of the three sub-pixels 2 can meet the requirement of high efficiency.

[0070] In the present example embodiment, the substrate 1 can be a silicon substrate 1, and the silicon substrate 1 can be a wafer. The embodiments of the present disclosure include but are not limited to this. For example, the semiconductor manufacturing process adopted by the silicon substrate 1 is mature and stable in performance, which is conducive to the manufacture of micro display devices; for example, some circuit structures (such as driving integrated circuits and pixel circuits) can be integrated on the silicon substrate 1, thereby improving the integration of the display panel. In addition, the silicon substrate 1 has excellent thermal stability, mechanical strength and chemical stability, which can effectively improve the stability and reliability of the silicon-based OLED display panel. At the same time, the silicon substrate 1 also has good heat conduction performance, which can effectively reduce the temperature of the silicon-based OLED display panel and improve its service life. Compared with conventional OLED display panels, the silicon-based OLED display panel can also have a more compact pixel arrangement, so the silicon-based OLED display panel can achieve higher resolution and fineness. Specifically, the resolution of the silicon-based OLED display panel can generally reach more than 3000ppi (pixels per inch).

[0071] The above advantages of the silicon-based OLED display panel are conducive to the application of the silicon-based OLED display panel in the display field of virtual reality (VR), augmented reality (AR) and mixed reality (MR).

[0072] This also brings great challenges to the OLED display panel, because the fine metal mask (FMM) can only reach about 800 ppi, and the fine metal mask is limited, so it is difficult to achieve high image resolution. This means that the silicon-based OLED is difficult to use the side-by-side single-color device (Side by Side, SBS) method for OLED evaporation, and needs to use OLED full-area evaporation.

[0073] The silicon-based OLED display panel can only use white light sub-pixels 2. Generally, the silicon-based OLED display panel uses a single light-emitting layer device structure to achieve white light emission. The light-emitting layer uses a combination of multiple different light-emitting materials to achieve white light. The display brightness is generally between 80 nits and 600 nits, which belongs to a low-mid brightness display. If a single layer structure is used to achieve high brightness (greater than 1000 nits), the power consumption and service life will be sacrificed.

[0074] In order to improve the performance, brightness and service life of the silicon-based OLED display panel, a tandem OLED with two or more light-emitting layers is introduced. The tandem OLED device uses a CGL (charge generation layer 222) to connect the upper and lower light-emitting layers in series, and realizes the effect of light-emitting superposition on the display device, thereby improving important optoelectronic properties such as current efficiency, brightness, operating life, etc. While the CGL is connected in series with the upper and lower light-emitting layers, due to its high conductivity, it will cause horizontal crosstalk between the sub-pixels 2 of the display device. This horizontal crosstalk is particularly severe at low gray levels, resulting in leakage and light leakage between sub-pixels 2.

[0075] In order to block the horizontal crosstalk caused by the charge generation layer 222, as shown in Figure 1 , an undercut structure 4 needs to be provided. The undercut structure 4 can block the charge generation layer 222 and reduce the horizontal crosstalk between the sub-pixels 2.

[0076] In addition, by adjusting the thickness of the dielectric layer 212 of the first electrode 21 of different sub-pixels 2, the optical path of the optical cavity can be changed, so that the RGB sub-pixels 2 in the white light OLED device have their own optical path of the optical cavity, realizing the light modulation effect of a single sub-pixel 2 monomer under strong optical cavity conditions, so that the white light OLED + color film structure can obtain high color gamut and high brightness.

[0077] In combination with the color film layer 6, the passing light can be filtered, so that only red light passes through the red color film 62R, only green light passes through the green color film 62G, and only blue light passes through the blue color film 62B. On the one hand, the color coordinates of the single-color point are improved, and on the other hand, the brightness of the light wave length adjustment device can be matched, thereby obtaining a higher color gamut and higher brightness.

[0078] However, referring to Figure 1 As shown in FIG. 2, due to the different thicknesses of the dielectric layer 212 of the first electrode 21 of different sub-pixels 2 and the undercut structure 4, there are many discontinuities on the side of the first electrode 21 away from the substrate 1, and the height of the discontinuities is large. The evaporation of the light-emitting layer group 22 is full-area evaporation, and after evaporation, the light-emitting layer group 22 also has many discontinuities, and due to the large height of the discontinuities, the discontinuities extend to the display area of each sub-pixel 2, so that the optical path at the discontinuities is different from that at the central position, resulting in different light spectrum of the light-emitting layer group 22. For example, referring to FIG. 3, the vertical coordinate intesnity is light intensity, the central wavelength of the blue sub-pixel 2 at the discontinuity is about 450 nm, and the central wavelength at the central position is about 460 nm. This will seriously affect the purity of the spectrum, reduce the color gamut, and reduce the display effect of the product. Figure 2

[0079] As shown in FIG. 4 and FIG. 5, the silicon-based substrate 1 can include a driving circuit electrically connected to the sub-pixel 2 for driving the sub-pixel 2 to emit light. Figure 3 Figure 4 As shown in FIG. 6, the driving circuit can include a transistor T. It should be noted that the specific circuit structure of the driving circuit can be set according to actual needs. Figure 4 The driving circuit is not shown in its entirety in FIG. 6, and the driving circuit can further include, for example, other transistors T, and for example, storage capacitors, and the like, and embodiments of the present disclosure do not limit this. Figure 4

[0080] The transistor T can include an active region 11, a gate electrode 12, a source electrode 13, and a drain electrode 14. The source electrode 13 and the drain electrode 14 can be disposed on opposite sides of the active region 11, and the gate electrode 12 can be disposed opposite the active region 11. The three electrodes correspond to three electrode connection portions, respectively. Specifically, the gate electrode 12 is electrically connected to the gate electrode connection portion 15, the source electrode 13 is electrically connected to the source electrode connection portion 16, and the drain electrode 14 is electrically connected to the drain electrode connection portion 17. The three electrodes are all electrically connected to the three electrode connection portions through tungsten vias 18.

[0081] The materials of the gate electrode connection portion 15, the source electrode connection portion 16, and the drain electrode connection portion 17 can include metal materials. For example, an oxidation-resistant layer can be disposed on at least one side (for example, the upper side and / or the lower side) of each of the gate electrode connection portion 15, the source electrode connection portion 16, and the drain electrode connection portion 17, which can effectively prevent these electrode connection portions from being oxidized and improve their conductivity.

[0082] ​​​The source electrode connection portion 16 is electrically connected to the first electrode 21 of the sub-pixel 2 through a tungsten via 18. Specifically, the source electrode connection portion 16 is electrically connected to the reflective conductive layer 211 of the first electrode 21 through the tungsten via 18. Simultaneously, in the first electrode 21, the transparent conductive layer 213 is electrically connected to the reflective conductive layer 211 through a via in the dielectric layer 212. When the transistor T is in the on state, the electrical signal provided by the power line can be transmitted to the transparent conductive layer 213 through the source electrode 13, the source electrode connection portion 16, and the reflective conductive layer 211 of the transistor T. Due to the voltage difference formed between the transparent conductive layer 213 and the second electrode 23, an electric field is formed between them. Holes and electrons are injected into the light-emitting functional layer, and the light-emitting functional layer emits light under the action of this electric field.

[0083] It should be noted that when using transistors T with opposite polarities or when the current direction changes during circuit operation, the positions of the source electrode 13 and the drain electrode 14 in transistor T can be interchanged (correspondingly, the positions of the source electrode connection portion 16 and the drain electrode connection portion 17 can also be interchanged). That is, one of the source electrode 13 and the drain electrode 14 of transistor T (i.e., the source electrode 13 or the drain electrode 14) can be electrically connected to the first electrode 21.

[0084] In this example implementation, refer to Figure 3 As shown, at least three types of sub-pixels 2 are disposed on one side of the substrate 1. For example, three types of sub-pixels 2 can be disposed on one side of the substrate 1. The three types of sub-pixels 2 can include a first sub-pixel 2G, a second sub-pixel 2B, and a third sub-pixel 2R. The first sub-pixel 2G can be a green sub-pixel, the second sub-pixel 2B can be a blue sub-pixel, and the third sub-pixel 2R can be a red sub-pixel, such that the wavelength of the third sub-pixel 2R is greater than the wavelength of the first sub-pixel 2G, and the wavelength of the first sub-pixel 2G is greater than the wavelength of the second sub-pixel 2B. Four types of sub-pixels can also be disposed on one side of the substrate 1. The four types of sub-pixels can include a first sub-pixel 2G, a second sub-pixel 2B, a third sub-pixel 2R, and a fourth sub-pixel. The first sub-pixel 2G can be a green sub-pixel, the second sub-pixel 2B can be a blue sub-pixel, the third sub-pixel 2R can be a red sub-pixel, and the fourth sub-pixel can be a white sub-pixel.

[0085] The sub-pixel 2 may include a first electrode 21, a light-emitting layer group 22 and a second electrode 23 stacked in sequence; the first electrode 21 of the sub-pixel 2 is closer to the substrate 1 than the second electrode 23 of the sub-pixel 2. Specifically, the first electrode 21 is disposed on one side of the substrate 1, the light-emitting layer group 22 is disposed on the side of the first electrode 21 away from the substrate 1, and the second electrode 23 is disposed on the side of the light-emitting layer group 22 away from the substrate 1.

[0086] The first electrode 21 can include a reflective conductive layer 211, a dielectric layer 212 and a transparent conductive layer 213 which are sequentially stacked, the reflective conductive layer 211 is closer to the substrate 1 relative to the transparent conductive layer 213, specifically, the reflective conductive layer 211 is arranged on one side of the substrate 1, the dielectric layer 212 is arranged on the side of the reflective conductive layer 211 away from the substrate 1, and the transparent conductive layer 213 is arranged on the side of the dielectric layer 212 away from the substrate 1.

[0087] The difference between the thicknesses of the first electrodes 21 of the two adjacent sub-pixels 2 is less than or equal to 200 angstroms, that is, the difference between the distances between the side of the first electrode 21 of the two adjacent sub-pixels 2 away from the substrate 1 and the substrate 1 is less than or equal to 200 angstroms, for example, the difference between the thicknesses of the first electrodes 21 of the two adjacent sub-pixels 2 can be 0, 20 angstroms, 50 angstroms, 70 angstroms, 100 angstroms, 130 angstroms, 150 angstroms, 170 angstroms, 190 angstroms, etc.

[0088] In this way, the height of the difference in level of the side of the first electrode 21 away from the substrate 1 can be reduced, and the difference in level of the light-emitting layer group 22 can be reduced, and the difference in light spectrum of the light-emitting layer group 22 can be reduced or even avoided, the purity of the spectrum can be improved, the color gamut and the display effect can be improved. Moreover, the refractive indexes of the dielectric layers 212 of the three sub-pixels 2 are different from each other, and the thicknesses of the first electrodes 21 of the three sub-pixels 2 are not significantly different, so that the optical path lengths in the optical cavities of the three sub-pixels 2 are different, so as to match the spectral peaks of the light of the RGB three colors, and the coupling of the light of the three colors of the three sub-pixels 2 can meet the requirement of high efficiency.

[0089] In the example embodiment, the thicknesses of the first electrodes 21 of the at least three sub-pixels 2 are the same, that is, the difference between the thicknesses of the first electrodes 21 of the two adjacent sub-pixels 2 is substantially 0, and the difference between the distances between the side of the first electrode 21 of the two adjacent sub-pixels 2 away from the substrate 1 and the substrate 1 is substantially 0. Specifically, the thicknesses of the dielectric layers 212 of the at least three sub-pixels 2 are the same, the thicknesses of the reflective conductive layers 211 of the at least three sub-pixels 2 are the same, and the thicknesses of the transparent conductive layers 213 of the at least three sub-pixels 2 are the same, so that the thicknesses of the first electrodes 21 of the at least three sub-pixels 2 are the same.

[0090] It should be noted that "the same thickness" not only includes the same, but also can have a certain error, according to the equipment and preparation process, the error range is different, therefore, within the error range of the equipment and preparation process, it is considered to be the same; the difference between the thicknesses of the first electrodes 21 of the two adjacent sub-pixels 2 is within the error range, and it is considered to be substantially 0; similarly, the distance between the side of the first electrode 21 of the two adjacent sub-pixels 2 away from the substrate 1 and the substrate 1 is within the error range, and it is also considered to be substantially 0.

[0091] Of course, in some other example embodiments of the present disclosure, the thickness of the dielectric layer 212 can also be increased by reducing the thickness of the transparent conductive layer 213 and the thickness of the reflective conductive layer 211 of part of the sub-pixel 2; the thickness of the dielectric layer 212 can also be increased by reducing the thickness of the transparent conductive layer 213 or the thickness of the reflective conductive layer 211 of part of the sub-pixel 2.

[0092] The following is described by taking three sub-pixels 2 as an example.

[0093] Referring to Figure 3 As shown in the figure, the first electrode 21 of the first sub-pixel 2G is the first pixel electrode 2G1, the first electrode 21 of the second sub-pixel 2B is the second pixel electrode 2B1, and the first electrode 21 of the third sub-pixel 2R is the third pixel electrode 2R1. The first pixel electrode 2G1 can include a first reflective conductive layer 2G11, a first dielectric layer 2G12, and a first transparent conductive layer 2G13 which are sequentially stacked, and the first reflective conductive layer 2G11 is closer to the substrate 1 than the first transparent conductive layer 2G13; the second pixel electrode 2B1 can include a second reflective conductive layer 2B11, a second dielectric layer 2B12, and a second transparent conductive layer 2B13 which are sequentially stacked, and the second reflective conductive layer 2B11 is closer to the substrate 1 than the second transparent conductive layer 2B13; the third pixel electrode 2R1 can include a third reflective conductive layer 2R11, a third dielectric layer 2R12, and a third transparent conductive layer 2R13 which are sequentially stacked, and the third reflective conductive layer 2R11 is closer to the substrate 1 than the third transparent conductive layer 2R13.

[0094] Furthermore, the first dielectric layer 2G12 is provided with a first via hole 2G121, and the first transparent conductive layer 2G13 is connected to the first reflective conductive layer 2G11 through the first via hole 2G121; the second dielectric layer 2B12 is provided with a second via hole 2B121, and the second transparent conductive layer 2B13 is connected to the second reflective conductive layer 2B11 through the second via hole 2B121; the third dielectric layer 2R12 is provided with a third via hole 2R121, and the third transparent conductive layer 2R13 is connected to the third reflective conductive layer 2R11 through the third via hole 2R121.

[0095] In addition, a metal layer is arranged in the first via hole 2G121, the second via hole 2B121, and the third via hole 2R121, and the metal layer can ensure the connection effect between the first transparent conductive layer 2G13 and the first reflective conductive layer 2G11, the connection effect between the second transparent conductive layer 2B13 and the second reflective conductive layer 2B11, and the connection effect between the third transparent conductive layer 2R13 and the third reflective conductive layer 2R11.

[0096] The first pixel electrode 2G1, the second pixel electrode 2B1, and the third pixel electrode 2R1 are insulatively and separately arranged, and specifically, the display panel can further include an insulating isolation structure 3 arranged between adjacent first pixel electrodes 2G1, second pixel electrodes 2B1, and third pixel electrodes 2R1, so that the first pixel electrode 2G1, the second pixel electrode 2B1, and the third pixel electrode 2R1 are insulatively and separately arranged. The insulating isolation structure 3 can include a first portion 31 arranged between adjacent first reflective conductive layers 2G11, second reflective conductive layers 2B11, and third reflective conductive layers 2R11, and a second portion 32 arranged between adjacent first dielectric layers 2G12, second dielectric layers 2B12, and third dielectric layers 2R12, and extending to between adjacent first transparent conductive layers 2G13, second transparent conductive layers 2B13, and third transparent conductive layers 2R13.

[0097] The first pixel electrode 2G1, the second pixel electrode 2B1, and the third pixel electrode 2R1 are insulatively and separately arranged by the insulating isolation structure 3, so that the individual control of different sub-pixels 2 can be realized.

[0098] The first reflective conductive layer 2G11, the second reflective conductive layer 2B11, and the third reflective conductive layer 2R11 are made of a high-reflectivity metal, for example, titanium, platinum, silver, or the like.

[0099] The first transparent conductive layer 2G13, the second transparent conductive layer 2B13, and the third transparent conductive layer 2R13 can be made of ITO (indium tin oxide), IZO (indium zinc oxide), or the like.

[0100] In the example embodiment, the light-emitting layer group 22 is arranged as a whole layer, and thus the light-emitting layer group 22 is arranged on the side of the first pixel electrode 2G1, the second pixel electrode 2B1, and the third pixel electrode 2R1 away from the substrate 1, and the second electrode 23 is arranged on the side of the light-emitting layer group 22 away from the substrate 1.

[0101] In the third direction Z, the first optical cavity Q1 is between the second electrode 23 and the first reflective conductive layer 2G11, that is, between the side of the second electrode 23 close to the substrate 1 and the side of the first reflective conductive layer 2G11 away from the substrate 1; the second optical cavity Q2 is between the second electrode 23 and the second reflective conductive layer 2B11, that is, between the side of the second electrode 23 close to the substrate 1 and the side of the second reflective conductive layer 2B11 away from the substrate 1; and the third optical cavity Q3 is between the second electrode 23 and the third reflective conductive layer 2R11, that is, between the side of the second electrode 23 close to the substrate 1 and the side of the third reflective conductive layer 2R11 away from the substrate 1.

[0102] The optical path H1 of the first optical cavity Q1 substantially satisfies:

[0103]

[0104] wherein m1 is a positive integer, which can be the mode number of the first optical cavity Q1; n1 i is the refractive index of each film layer in the first optical cavity Q1, d1 i is the thickness of each film layer in the first optical cavity Q1, and λ1 is the center wavelength of the first sub-pixel 2G; in this way, the outgoing light of the center wavelength λ1 of the first sub-pixel 2G is enhanced due to constructive interference, that is, the brightness is improved, thereby improving the brightness of the display panel and reducing power consumption.

[0105] The optical path H2 of the second optical cavity Q2 substantially satisfies:

[0106]

[0107] wherein m2 is a positive integer, which can be the mode number of the second optical cavity Q2; n2 i is the refractive index of each film layer in the second optical cavity Q2, d2 i is the thickness of each film layer in the second optical cavity Q2, and λ2 is the center wavelength of the second sub-pixel 2B; in this way, the outgoing light of the center wavelength λ2 of the second sub-pixel 2B is enhanced due to constructive interference, that is, the brightness is improved, thereby improving the brightness of the display panel and reducing power consumption.

[0108] The optical path H3 of the third optical cavity Q3 substantially satisfies:

[0109]

[0110] wherein m3 is a positive integer, which can be the mode number of the third optical cavity Q3; n3 in3i is the refractive index of each film layer in the third optical cavity Q3, d3i is the thickness of each film layer in the third optical cavity Q3, and λ3 is the center wavelength of the third sub-pixel 2R. In this way, the outgoing light of the third sub-pixel 2R with the center wavelength λ3 is enhanced due to constructive interference, that is, the brightness is improved, thereby improving the brightness of the display panel and reducing power consumption.

[0111] In the example embodiment, m1 is equal to m3, and m2 is greater than m1. In this way, the thickness of the second dielectric layer 2B12 of the second sub-pixel 2B can be set to be relatively thick, thereby avoiding that the thickness of the second dielectric layer 2B12 is too thin, that is, the thickness of the dielectric layer of the blue sub-pixel is close to the thickness of the dielectric layer of the red sub-pixel, so that it is easy to realize in the preparation process.

[0112] Of course, in some other example embodiments of the present disclosure, m1 can be equal to m3, and m2 can be equal to m1, that is, m1 = m2 = m3. In this case, the refractive index of the first dielectric layer 2G12, the refractive index of the second dielectric layer 2B12, and the refractive index of the third dielectric layer 2R12 are related to the wavelength of the sub-pixel 2, that is, the longer the wavelength of the sub-pixel 2, the greater the refractive index of the dielectric layer 212, so that the optical path is realized under the condition that the thickness of the dielectric layer 212 is the same, and it meets the above optical path requirement. Specifically, the refractive index of the third dielectric layer 2R12 is greater than the refractive index of the first dielectric layer 2G12, and the refractive index of the first dielectric layer 2G12 is greater than the refractive index of the third dielectric layer 2R12. It can also be that m1, m2, and m3 are all different, and the refractive index of the dielectric layer 212 is adjusted to make the optical path of the optical cavities of the three sub-pixels meet the above requirement, and the distance between the side of the first electrode 21 of the adjacent two sub-pixels 2 and the substrate 1 is less than or equal to 200 angstroms.

[0113] The difference between the optical path of the second optical cavity Q2 and the optical path of the first optical cavity Q1 is greater than or equal to 500 angstroms and less than or equal to 1000 angstroms, for example, the difference between the optical path of the second optical cavity Q2 and the optical path of the first optical cavity Q1 can be 550 angstroms, 600 angstroms, 650 angstroms, 700 angstroms, 750 angstroms, 800 angstroms, 850 angstroms, 900 angstroms, 950 angstroms, etc. In this way, the difference between the second pixel electrode 2B1 and the first pixel electrode 2G1 is avoided to be too large due to the need to meet the difference between the optical path of the second optical cavity Q2 and the optical path of the first optical cavity Q1, that is, the difference between the second pixel electrode 2B1 and the first pixel electrode 2G1 is minimized, thereby reducing the evaporation distortion of the light-emitting layer group 22, so that the light emission is less affected by stray light, and the single-color light emission can be better.

[0114] The difference between the optical path of the third optical cavity Q3 and the optical path of the first optical cavity Q1 is greater than or equal to 200 angstroms and less than or equal to 700 angstroms, for example, the difference between the optical path of the third optical cavity Q3 and the optical path of the second optical cavity Q2 can be 250 angstroms, 300 angstroms, 350 angstroms, 400 angstroms, 450 angstroms, 500 angstroms, 550 angstroms, 600 angstroms, 650 angstroms, etc. In this way, the difference between the third pixel electrode 2R1 and the first pixel electrode 2G1 is avoided to be too large due to the need to meet the difference between the optical path of the third optical cavity Q3 and the optical path of the first optical cavity Q1, that is, the difference between the third pixel electrode 2R1 and the first pixel electrode 2G1 is minimized, thereby reducing the evaporation distortion of the light-emitting layer group 22, so that the light emission is less affected by stray light, and the single-color light emission can be better guaranteed.

[0115] Specifically, the optical path of the first optical cavity Q1 is greater than or equal to 5200 angstroms and less than or equal to 5400 angstroms, for example, the optical path of the first optical cavity Q1 can be 5220 angstroms, 5250 angstroms, 5274 angstroms, 5300 angstroms, 5333 angstroms, 5350 angstroms, 5380 angstroms, etc. The optical path of the second optical cavity Q2 is greater than or equal to 5800 angstroms and less than or equal to 6000 angstroms, for example, the optical path of the second optical cavity Q2 can be 5820 angstroms, 5862 angstroms, 5870 angstroms, 5900 angstroms, 5933 angstroms, 5950 angstroms, 5980 angstroms, etc. The optical path of the third optical cavity Q3 is greater than or equal to 5750 angstroms and less than or equal to 5850 angstroms, for example, the optical path of the third optical cavity Q3 can be 5780 angstroms, 5800 angstroms, 5834 angstroms, 5850 angstroms, 5874 angstroms, 5700 angstroms, 5730 angstroms, etc.

[0116] The thickness of the first dielectric layer 2G12, the thickness of the second dielectric layer 2B12, and the thickness of the third dielectric layer 2R12 are the same, and the thickness of the dielectric layer 212 is greater than or equal to 500 angstroms and less than or equal to 2000 angstroms, that is, the thickness of the first dielectric layer 2G12, the thickness of the second dielectric layer 2B12, and the thickness of the third dielectric layer 2R12 are all greater than or equal to 500 angstroms and less than or equal to 2000 angstroms, for example, the thickness of the dielectric layer 212 can be 550, 600, 650, 700, 750, 800, 850, 900, 950, 1000, 1050, 1100, 1150, 1200, 1250, 1300, 1350, 1400, 1450, 1500, 1550, 1600, 1650, 1700, 1750, 1800, 1850, 1900, 1950 (all in angstroms), etc.

[0117] If the thickness of the dielectric layer 212 is too small, it cannot meet the requirement of the optical path of the optical cavity. If the thickness of the dielectric layer 212 is too large, it is not conducive to the thin and light setting of the display panel. The above numerical range not only meets the requirement of the optical path of the optical cavity, but also is conducive to the thin and light setting of the display panel.

[0118] The material of the first dielectric layer 2G12, the second dielectric layer 2B12 and the third dielectric layer 2R12 can be silicon oxynitride (SION). The content of O (oxygen) and N (nitrogen) in the film layer can be controlled by controlling the proportion of the reaction gas, and the higher the content of O, the lower the refractive index.

[0119] The refractive index of the first dielectric layer 2G12, the refractive index of the second dielectric layer 2B12 and the refractive index of the third dielectric layer 2R12 are different from each other. Specifically, the refractive index of the first dielectric layer 2G12 is greater than or equal to 1.3 and less than or equal to 1.6, for example, the refractive index of the first dielectric layer 2G12 can be 1.32, 1.35, 1.37, 1.4, 1.42, 1.44, 1.46, 1.48, 1.5, 1.53, 1.55, 1.58, etc. The refractive index of the second dielectric layer 2B12 is greater than or equal to 1.73 and less than or equal to 2.03, for example, the refractive index of the second dielectric layer 2B12 can be 1.75, 1.78, 1.8, 1.83, 1.85, 1.88, 1.9, 1.92, 1.95, 1.97, 2, etc. The refractive index of the third dielectric layer 2R12 is greater than or equal to 1.71 and less than or equal to 2.01, for example, the refractive index of the third dielectric layer 2R12 can be 1.75, 1.78, 1.8, 1.82, 1.84, 1.86, 1.9, 1.92, 1.95, 1.97, 2, etc.

[0120] In addition, the refractive index of the first dielectric layer 2G12, the refractive index of the second dielectric layer 2B12 and the refractive index of the third dielectric layer 2R12 can also be obtained according to the corresponding relationship of the present application and related technologies. Specifically, since it is necessary to ensure that the optical path of the first dielectric layer 2G12 in the third direction Z is unchanged, the optical path of the second dielectric layer 2B12 in the third direction Z is unchanged, and the optical path of the third dielectric layer 2R12 in the third direction Z is unchanged, the refractive index of the first dielectric layer 2G12, the refractive index of the second dielectric layer 2B12 and the refractive index of the third dielectric layer 2R12 can be obtained through the corresponding relationship in Table 1.

[0121] Table 1

[0122] First dielectric layer 2G12 Second dielectric layer 2B12 Third dielectric layer 2R12 Thickness in the related art K1 K2 K3 Refractive index in the related art nx nx nx Thickness in the present application D D D Refractive index in the present application nG nB nR Corresponding relationship K1*nx=D*nG K2*nx=D*nB K3*nx=D*nR

[0123] Referring to Figure 5 As shown in FIG. 2, the light-emitting layer group 22 can include a first light-emitting structure 221, a charge generation layer 222 and a second light-emitting structure 223 which are sequentially stacked, specifically, the first light-emitting structure 221 is arranged on the side of the first electrode 21 away from the substrate 1; the charge generation layer 222 is arranged on the side of the first light-emitting structure 221 away from the substrate 1; and the second light-emitting structure 223 is arranged on the side of the charge generation layer 222 away from the substrate 1.

[0124] The first light-emitting structure 221 can include a first hole injection layer 2211, a first hole transport layer 2212, a first light-emitting layer 2213, a second light-emitting layer 2214, and a first electron transport layer 2215 which are sequentially stacked, and the second light-emitting structure 223 can include a second hole injection layer 2231, a second hole transport layer 2232, a third light-emitting layer 2233, a second electron transport layer 2234, and an electron injection layer 2235 which are sequentially stacked.

[0125] The wavelength of light emitted by the first light-emitting layer 2213, the wavelength of light emitted by the second light-emitting layer 2214, and the wavelength of light emitted by the third light-emitting layer 2233 decrease in turn. Optionally, the first light-emitting layer 2213 can be a red light-emitting layer, the second light-emitting layer 2214 can be a green light-emitting layer, and the third light-emitting layer 2233 can be a blue light-emitting layer. That is, RGB three-color light-emitting layers are in the same pixel opening, a structure of a white light OLED device is realized, white light is emitted, and each pixel opening adopts a stacked device type to meet the requirements of brightness and color gamut.

[0126] The thickness of the light-emitting layer group 22 is greater than or equal to 1200 angstroms and less than or equal to 3000 angstroms, for example, the thickness of the light-emitting layer group 22 can be 1500 angstroms, 1700 angstroms, 2000 angstroms, 2300 angstroms, 2500 angstroms, 2800 angstroms, etc.

[0127] If the thickness of the light-emitting layer group 22 is too thin, it cannot meet the requirements of setting the above-mentioned multi-layer film. If the thickness of the light-emitting layer group 22 is too thick, it is not conducive to the thin and light setting of the display panel. The above-mentioned numerical range not only meets the requirements of setting the above-mentioned multi-layer film, but also is conducive to the thin and light setting of the display panel.

[0128] The refractive index of the light-emitting layer group 22 is about 1.9.

[0129] The display panel can further include an undercut structure 4 disposed on the side of the first pixel electrode 2G1, the second pixel electrode 2B1, and the third pixel electrode 2R1 away from the substrate 1, and located between the adjacent two sub-pixels 2.

[0130] Specifically, the undercut structure 4 can include a first film layer 41 and a second film layer 42 which are sequentially stacked, the first film layer 41 is disposed on the side of the first pixel electrode 2G1, the second pixel electrode 2B1, and the third pixel electrode 2R1 away from the substrate 1, and the second film layer 42 is disposed on the side of the first film layer 41 away from the substrate 1; and the orthographic projection of the first film layer 41 on the substrate 1 is located within the orthographic projection of the second film layer 42 on the substrate 1, and there is a certain spacing between the edge of the orthographic projection of the first film layer 41 on the substrate 1 and the edge of the orthographic projection of the second film layer 42 on the substrate 1, so that the undercut structure 4 forms a structure with a small bottom and a large top.

[0131] Referring to Figure 6 As shown in FIG. 1, the light-emitting layer group 22 is arranged on the side of the undercut structure 4 away from the substrate 1, and the undercut structure 4 is used to separate the charge generation layers 222 of two adjacent sub-pixels 2, i.e., the charge generation layers 222 of two adjacent sub-pixels 2 can be separated by the undercut structure 4, thereby reducing the lateral crosstalk between the sub-pixels 2.

[0132] Of course, a third film layer 43 can also be arranged between the first film layer 41 and the first pixel electrode 2G1, the second pixel electrode 2B1 and the third pixel electrode 2R1.

[0133] Referring to Figure 3 As shown in FIG. 1, the display panel can further include an encapsulation layer 5 arranged on the side of the second electrode 23 away from the substrate 1; the encapsulation layer 5 can be a polymer and a ceramic thin film encapsulation layer 5.

[0134] The display panel can further include a color filter layer 6 arranged on the side of the encapsulation layer 5 away from the substrate 1, and the color filter layer 6 can include a black matrix 61 and color filter parts, the black matrix 61 is arranged in a grid shape and forms a plurality of pixel openings, and one color filter part is arranged in each pixel opening.

[0135] The color filter parts can include a plurality of color filters (such as a red color filter 62R, a green color filter 62G and a blue color filter 62B) of different colors, and each color filter is arranged in a corresponding pixel opening. The optical path of the white light OLED device is adjusted by the dielectric layer 212, and the passing light is filtered by cooperating with the color filter parts, so that only red light passes through the red color filter 62R, only green light passes through the green color filter 62G, and only blue light passes through the blue color filter 62B, which can improve the color coordinates of the single color point on the one hand, and can match the brightness of the light wavelength adjusting device on the other hand, thereby obtaining a higher color gamut and a higher brightness.

[0136] The display panel can further include a cover plate 7 arranged on the side of the color filter layer 6 away from the substrate 1, and the cover plate 7 can be a glass cover plate 7.

[0137] Within the same inventive concept, the display device provided by the example embodiments of the present disclosure can include the display panel of any one of the above-mentioned display panels, and the specific structure of the display panel has been described in detail above, and thus will not be described again here.

[0138] The specific type of the display device is not particularly limited, and any type of display device commonly used in the art can be used, such as a mobile device such as a mobile phone, a vehicle-mounted display device, a VR device, etc., and a person skilled in the art can select a corresponding display device according to the specific use of the display device, which will not be described again here.

[0139] Compared with the prior art, the display device provided by the example embodiments of the present application has the same beneficial effects as the display panel provided by the example embodiments described above, and thus will not be described herein.

[0140] Other embodiments of the present disclosure will be apparent to those skilled in the art from consideration of the specification and practice of the features disclosed herein. It is intended that the present disclosure cover any and all variations of the present disclosure including combinations of features falling within the general scope of the disclosure and including equivalents thereof. The specification and examples are to be regarded as exemplary only, and the true scope and spirit of the present disclosure shall be indicated by the appended claims.

Claims

1. A display panel, characterized by, The application relates to a substrate, at least three sub-pixels arranged on one side of the substrate, the sub-pixels comprising a first electrode, the first electrode comprising a reflective conductive layer, a dielectric layer and a transparent conductive layer arranged in sequence, the thickness difference of the first electrode of adjacent two sub-pixels being less than or equal to 200 angstroms, and the refractive index of the dielectric layer of the at least three sub-pixels being different from each other. The thickness of the first electrode of the at least three sub-pixels is the same. The thickness of the dielectric layer of the at least three sub-pixels is the same, the thickness of the reflective conductive layer of the at least three sub-pixels is the same, and the thickness of the transparent conductive layer of the at least three sub-pixels is the same.

2. The display panel of claim 1, wherein, The thickness of the dielectric layer is greater than or equal to 500 angstroms and less than or equal to 2000 angstroms.

3. The display panel of claim 2, wherein, The at least three sub-pixels comprise a first sub-pixel, a second sub-pixel and a third sub-pixel, the first electrode of the first sub-pixel is a first pixel electrode, the first electrode of the second sub-pixel is a second pixel electrode, the first electrode of the third sub-pixel is a third pixel electrode, the first pixel electrode, the second pixel electrode and the third pixel electrode are arranged in insulation and spacing, the first pixel electrode comprises a first reflective conductive layer, a first dielectric layer and a first transparent conductive layer arranged in sequence, the second pixel electrode comprises a second reflective conductive layer, a second dielectric layer and a second transparent conductive layer arranged in sequence, and the third pixel electrode comprises a third reflective conductive layer, a third dielectric layer and a third transparent conductive layer arranged in sequence.

4. The display panel of claim 3, wherein, The sub-pixel further comprises:

5. The display panel of claim 1, wherein, a light-emitting layer group arranged on the side of the first pixel electrode, the second pixel electrode and the third pixel electrode away from the substrate; 6. The display panel of claim 5, wherein, a second electrode arranged on the side of the light-emitting layer group away from the substrate; in a third direction, the first optical cavity is between the side of the second electrode close to the substrate and the side of the first reflective conductive layer away from the substrate, the second optical cavity is between the side of the second electrode close to the substrate and the side of the second reflective conductive layer away from the substrate, and the third optical cavity is between the side of the second electrode close to the substrate and the side of the third reflective conductive layer away from the substrate; the optical path H1 of the first optical cavity satisfies: the optical path H2 of the second optical cavity satisfies: the optical path H3 of the third optical cavity satisfies: wherein m1 is a positive integer, n1 i n1is the refractive index of each film layer in the first optical cavity, d1 i n1is the refractive index of each film layer in the first optical cavity, d1 m1 is equal to m3, and m2 is greater than m1; the wavelength of the third sub-pixel is greater than the wavelength of the first sub-pixel, and the wavelength of the first sub-pixel is greater than the wavelength of the second sub-pixel. wherein m2 is a positive integer, n2 i n2i is the refractive index of each film layer in the second optical cavity, d2 i n2i is the refractive index of each film layer in the second optical cavity, d2 The difference between the optical path of the second optical cavity and the optical path of the first optical cavity is greater than or equal to 500 angstroms and less than or equal to 1000 angstroms, and the absolute value of the difference between the optical path of the third optical cavity and the optical path of the first optical cavity is greater than or equal to 200 angstroms and less than or equal to 700 angstroms. wherein m3 is a positive integer, n3 i are the refractive indices of the individual layers in the third optical cavity, d3i are the thicknesses of the individual layers in the third optical cavity, and λ3 is the center wavelength of the third sub-pixel.

7. The display panel of claim 6, wherein, ​ 8. The display panel of claim 7, wherein, ​ 9. The display panel of claim 8, wherein, An optical path of the first optical cavity is greater than or equal to 5200 angstroms and less than or equal to 5400 angstroms, an optical path of the second optical cavity is greater than or equal to 5800 angstroms and less than or equal to 6000 angstroms, and an optical path of the third optical cavity is greater than or equal to 5750 angstroms and less than or equal to 5950 angstroms.

10. The display panel of claim 7, wherein, A refractive index of the first dielectric layer is greater than or equal to 1.3 and less than or equal to 1.6, a refractive index of the second dielectric layer is greater than or equal to 1.73 and less than or equal to 2.03, and a refractive index of the third dielectric layer is greater than or equal to 1.71 and less than or equal to 2.

01.

11. The display panel of claim 6, wherein, A thickness of the light-emitting layer group is greater than or equal to 1200 angstroms and less than or equal to 3000 angstroms.

12. The display panel of claim 6, wherein, The light-emitting layer group comprises: a first light-emitting structure disposed on a side of the first electrode facing away from the substrate; a charge generation layer disposed on a side of the first light-emitting structure facing away from the substrate; a second light-emitting structure disposed on a side of the charge generation layer facing away from the substrate; The display panel further comprises: an undercut structure disposed on a side of the first pixel electrode, the second pixel electrode, and the third pixel electrode facing away from the substrate and located between two adjacent sub-pixels, and the light-emitting layer group is disposed on a side of the undercut structure facing away from the substrate, and the undercut structure is used to separate the charge generation layers of the two adjacent sub-pixels.

13. The display panel of claim 5, wherein, The first dielectric layer is provided with a first via hole, and the first transparent conductive layer is connected to the first reflective conductive layer through the first via hole; the second dielectric layer is provided with a second via hole, and the second transparent conductive layer is connected to the second reflective conductive layer through the second via hole; and the third dielectric layer is provided with a third via hole, and the third transparent conductive layer is connected to the third reflective conductive layer through the third via hole.

14. The display panel of claim 5, wherein, The display panel further comprises: an insulating isolation structure disposed between adjacent first pixel electrodes, second pixel electrodes, and third pixel electrodes to insulate and separate the first pixel electrodes, the second pixel electrodes, and the third pixel electrodes; The substrate comprises a plurality of arrayed driving circuits, and the first pixel electrode, the second pixel electrode, and the third pixel electrode are one-to-one electrically connected to the driving circuits.

15. A display device comprising: The display panel comprises: The display panel of any one of claims 1-14. The display panel of any one of claims 1-14.

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