N-type diamond material and method of making the same

By injecting metallic lithium into diamond and using N2 plasma co-doping and liquid nitrogen cooling, the preparation problem of N-type diamond materials was solved, achieving stable doping distribution and lattice repair, thus promoting the large-scale application of diamond.

CN121377007BActive Publication Date: 2026-06-09INNER MONGOLIA JUNRUI TECHNOLOGY CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
INNER MONGOLIA JUNRUI TECHNOLOGY CO LTD
Filing Date
2025-10-29
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

Existing technologies struggle to prepare stable, low-resistivity N-type diamond materials. Carrier concentration and mobility fall far short of theoretical expectations, and issues such as low deep-level impurity activation rate and high defect recombination center density hinder the large-scale application of diamond.

Method used

Under pressure, metallic lithium is injected into diamond, and co-doping is performed through an N2 plasma environment. Combined with liquid nitrogen cooling, a stable distribution of lithium and nitrogen elements is formed, thus realizing the preparation of N-type diamond.

Benefits of technology

Breaking through the high-energy damage bottleneck of traditional ion implantation, promoting the uniform distribution of doped particles and lattice self-repair, N-type semiconductor diamond that can exist stably at room temperature and pressure was realized, laying the material foundation for diamond electronic devices.

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Abstract

The application provides an N-type diamond material and a preparation method thereof, and belongs to the technical field of semiconductor materials.The crystal lattice structure of the N-type diamond material comprises lithium atoms and nitrogen atoms, and the preparation method comprises the following steps: mixing an original diamond sheet with lithium carbonate powder, performing pressure annealing treatment to obtain lithium-doped diamond, performing N2 plasma treatment on the lithium-doped diamond to obtain lithium-nitrogen-doped diamond, and cooling the lithium-nitrogen-doped diamond in liquid nitrogen.The N-type semiconductor diamond is stable at normal temperature and pressure, and lays a material foundation for practical application of diamond electronic devices.
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Claims

1. A method for preparing N-type diamond material, characterized in that, Includes the following steps: The original diamond sheet was mixed with lithium carbonate powder and subjected to pressure annealing to obtain lithium-filled diamond. The lithium-filled diamond was then subjected to N2 plasma treatment to obtain lithium- and nitrogen-filled diamond. The lithium- and nitrogen-filled diamond was then placed in liquid nitrogen for cooling to finally obtain the N-type diamond material. The pressure annealing treatment is performed at a temperature of 200-600℃ and a pressure of 1-50 MPa. The voltage for the N2 plasma treatment is 50-200 V, and the treatment time is 1-20 h.

2. The method for preparing N-type diamond material according to claim 1, characterized in that, The average particle size of the lithium carbonate powder is 5 μm.

3. The method for preparing N-type diamond material according to claim 1, characterized in that, The original diamond sheet is further subjected to a double-sided grinding and polishing process before being mixed with lithium carbonate powder.

4. The method for preparing N-type diamond material according to claim 1, characterized in that, The original diamond sheet is a single-crystal diamond sheet or a nitrogen-doped conductive single-crystal diamond sheet.

5. An N-type diamond material, characterized in that, It is prepared according to any one of claims 1-4.

6. The N-type diamond material according to claim 5, characterized in that, The N-type diamond material contains lithium atoms and nitrogen atoms in its crystal lattice structure, and the N-type diamond material is a single-crystal diamond.