Illuminating lamp related to red light wave band and light emitting method related to red light wave band

Abstract

The invention provides an illumination lamp related to a red light wave band and a light emitting method related to the red light wave band. The illumination lamp related to the red light wave band has a continuous light emitting spectrum at the wave band of 650-810 nm. The illumination lamp comprises a chip or a chip and fluorescent powder which have emission peaks in the wave band range of 650-680 nm, the wave band range of 680-730 nm, the wave band range of 730-770 nm and the wave band range of 770-810 nm, so that the spectrum in the red light wave band is complemented, the actual light emitting effect of the illumination lamp related to the red light wave band is closer to the effect of sunlight, and the illumination effect of the illumination lamp related to the red light wave band is improved. And the healthy lighting requirement of people is met.

Description

Technical Field

[0001] This invention relates to the field of lighting, and in particular to a lighting fixture and a method for emitting light in the red light band. Background Technology

[0002] With the continuous development of LED lighting technology, lighting not only needs to be highly efficient and energy-saving, but also increasingly focuses on healthy and comfortable light quality. In response to the emergence of new technologies, people have placed higher demands on the quality and comfort of lighting, especially regarding healthy lighting. Sunlight plays a vital role in human health, but due to changes in modern lifestyles and production patterns, people are increasingly relying on artificial lighting, leading to a strong desire for artificial lighting to produce effects similar to sunlight.

[0003] Since the visible light wavelength for humans is 400nm-750nm, most current lighting fixtures only meet illumination needs, and their corresponding emission wavelengths are concentrated within the visible light range, completely lacking the spectrum outside the visual range. Figure 1 The image shows a comparison between the emission spectrum of an existing high color rendering index LED light source and the solar spectrum. As can be seen from the image, the existing LED light source has a severe spectral deficiency in the wavelength range greater than 650nm.

[0004] However, besides its illumination function in the visible light spectrum, natural sunlight has positive effects on human visual health, physiological health, and comfort. It influences not only human circadian rhythms but also plays a crucial role in the development of emmetropia (normal vision). For example, infrared radiation can enhance the body's immunity, improve microcirculation, promote metabolism, accelerate wound healing, and improve skin health. Current lighting fixtures lack the red light spectrum, and their actual luminous effect cannot compare to sunlight. Prolonged reliance on artificial lighting may lead to physiological disorders in modern people. Summary of the Invention

[0005] One object of the present invention is to provide a lighting fixture and a method for emitting light in the red light band, wherein the emission spectrum of the lighting fixture in the red light band is capable of involving the red light band and highly reproducing the solar spectrum in the red light band to provide healthy lighting.

[0006] Another object of the present invention is to provide a lighting fixture and a method for emitting light in the red light band, wherein the lighting fixture in the red light band complements the spectrum in the red light band of existing lighting fixtures, so that the actual emitting effect of the lighting fixture in the red light band is closer to that of sunlight, and meets people's health lighting needs.

[0007] Another object of the present invention is to provide a lighting fixture and a method for emitting light in the red light band, wherein the lighting fixture in the red light band has high spectral continuity in the red light band, thereby being able to better reproduce the solar spectrum and provide a luminous effect comparable to sunlight.

[0008] Another objective of this invention is to provide an illumination fixture and a light emission method for the red light band. This invention identifies absorption peaks in the solar spectrum that meet certain energy change requirements in a band greater than 650nm. Multiple bands are divided based on the wavelength of the absorption peaks, and chips or matching chips and phosphors with emission peaks in the corresponding bands are selected for each band to better reproduce the solar spectrum.

[0009] Another object of the present invention is to provide an infrared-band lighting fixture and an infrared-band emission method, wherein, based on the identification of absorption peaks in the solar spectrum that meet certain energy change requirements, the wavelengths of the absorption peaks are used to divide the wavelength ranges into 650nm-680nm, 680nm-730nm, 730nm-770nm, and 770nm-810nm. The infrared-band lighting fixture, based on the chip configuration or the chip and phosphor configuration, has emission peaks in the 650nm-680nm range, the 680nm-730nm range, the 730nm-770nm range, and the 770nm-810nm range, respectively. This satisfies the corresponding spectral settings based on a reasonable selection of the chip or the chip and phosphor, thereby better reproducing the spectrum of sunlight in the infrared band.

[0010] Another object of the present invention is to provide an infrared-band lighting fixture and an infrared-band light emission method, wherein the infrared-band lighting fixture includes four types of chips with emission peak wavelengths of 666nm±5nm, 710nm±5nm, 753nm±5nm, and 786nm±5nm, respectively, and are sequentially named chip L1, chip L2, chip L3, and chip L4, that is, the chip with emission peak wavelength of 666nm±5nm is named chip L1, the chip with emission peak wavelength of 710nm±5nm is named chip L2, the chip with emission peak wavelength of 753nm±5nm is named chip L3, and the chip with emission peak wavelength of 786nm±5nm is named chip L4, so that the emission peak of the infrared-band lighting fixture in the infrared band spectrum can be close to the peak of the solar spectrum in the infrared band, thereby better reproducing the solar spectrum in the infrared band.

[0011] Another objective of this invention is to provide an infrared-involved lighting fixture and an infrared-involved light emission method, wherein the emission peaks of at least two types of chips located in different wavelength ranges have a half-wavelength greater than or equal to 30 nm, so as to ensure the spectral continuity of the infrared-involved lighting fixture in the red light band, effectively reduce gaps and peaks in the spectrum, and thus better reproduce the spectrum of the corresponding sunlight in the red light band.

[0012] Another object of the present invention is to provide an illumination fixture and a method for emitting light in the red light band, wherein the half-wavelength of the chips L2 and L3 is greater than or equal to 30 nm, so as to ensure the spectral continuity of the illumination fixture in the red light band, effectively reduce gaps and peaks in the spectrum, and thus better reproduce the spectrum of the corresponding sunlight in the red light band.

[0013] Another object of the present invention is to provide a lighting fixture in the red light band and a method for emitting light in the red light band, wherein the half-width of the chips L2 and L3 is greater than or equal to 45 nm, thereby improving the continuity between the emission peaks formed by the chips L1, L2, L3 and L4, avoiding gaps in the emission spectrum of the lighting fixture in the red light band, and improving the degree of reproduction of the solar spectrum in the red light band by the lighting fixture in the red light band.

[0014] Another object of the present invention is to provide an illumination fixture and a method for emitting light in the red light band, wherein the illumination fixture in the red light band is further based on the chip configuration or the chip and phosphor configuration to have an emission peak in the band greater than 810 nm, so that the illumination fixture in the red light band can supplement the red light band of 650 nm-1050 nm, so that its illumination source can be closer to sunlight.

[0015] Another object of the present invention is to provide an infrared-influenced lighting fixture and an infrared-influenced light emission method, wherein the infrared-influenced lighting fixture includes at least one first-band chip having an emission peak in the 420nm-580nm band range, so as to satisfy the coverage of the infrared-influenced lighting fixture in the visible light band and ensure the lighting effect of the infrared-influenced lighting fixture.

[0016] Another object of the present invention is to provide an infrared-influenced lighting fixture and an infrared-influenced light emission method, wherein the emission peak wavelength of the first band chip is selected from one of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm to match the peak distribution of the solar spectrum in the visible light band, thereby ensuring the lighting effect of the infrared-influenced lighting fixture.

[0017] Another object of the present invention is to provide an infrared-influenced lighting fixture and an infrared-influenced light emission method, wherein the infrared-influenced lighting fixture includes at least four first-band chips and has emission peak wavelengths of the four first-band chips in the band range of 425nm±5nm, 445nm±5nm, 455nm±5nm, and 470nm±5nm, thereby enabling the emission spectrum of the infrared-influenced lighting fixture to approach the solar spectrum, so as to better reproduce the corresponding solar spectrum.

[0018] Another object of the present invention is to provide an infrared-band lighting fixture and an infrared-band light emission method, wherein the infrared-band lighting fixture uses phosphors with emission peak wavelengths at 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm, and 655nm±5nm to simultaneously perform wavelength conversion matching on the first band chip, so as to further match the corresponding solar spectrum, thereby providing an illumination effect comparable to sunlight.

[0019] Another object of the present invention is to provide an infrared-inducing lighting fixture and an infrared-inducing light emission method, wherein the infrared-inducing light emission method identifies absorption peaks in the solar spectrum that meet certain energy change requirements, and divides the wavelength of the absorption peaks into four bands: 650nm to 680nm, 680nm to 730nm, 730nm to 770nm, and 770nm to 810nm. Based on the divided bands, a chip or matching arrangement of a chip and phosphor is selected to have emission peaks in the 650nm to 680nm band, the 680nm to 730nm band, the 730nm to 770nm band, and the 770nm to 810nm band. The selection of the emission peaks of the chip is reasonable to meet the corresponding spectral settings and is beneficial to improving the continuity of the spectrum.

[0020] According to one aspect of the present invention, the present invention provides an infrared-band lighting fixture, wherein the infrared-band lighting fixture is divided into bands of 650nm-680nm, 680nm-730nm, 730nm-770nm, and 770nm-810nm based on the identification of absorption peaks in the solar spectrum that meet certain energy change requirements, with the wavelength of the absorption peaks as the boundary. The infrared-band lighting fixture, based on the chip configuration or the chip and phosphor configuration, has emission peaks in the 650nm-680nm band, the 680nm-730nm band, the 730nm-770nm band, and the 770nm-810nm band.

[0021] In one embodiment, the lighting fixture in the red light band further has an emission peak in a band greater than 810 nm based on the chip configuration or the chip and phosphor configuration.

[0022] In one embodiment, the lighting fixture in the red light band includes four chips with emission peak wavelengths of 666nm±5nm, 710nm±5nm, 753nm±5nm and 786nm±5nm, respectively, and are named chip L1, chip L2, chip L3 and chip L4, respectively, wherein the half-wavelength of chip L2 and chip L3 is greater than or equal to 30nm.

[0023] In one embodiment, the half-wavelength of the chips L2 and L3 is greater than or equal to 45 nm.

[0024] In one embodiment, the peak emission wavelength of chip L1 is 666nm, the peak emission wavelength of chip L2 is 710nm, the peak emission wavelength of chip L3 is 755nm, and the peak emission wavelength of chip L4 is 783nm.

[0025] In one embodiment, the half-wavelength of chip L1 is 14nm, the half-wavelength of chip L2 is 49nm, the half-wavelength of chip L3 is 51nm, and the half-wavelength of chip L4 is 19nm.

[0026] In one embodiment, the peak emission wavelength of chip L1 is 670nm, the peak emission wavelength of chip L2 is 710nm, the peak emission wavelength of chip L3 is 755nm, and the peak emission wavelength of chip L4 is 783nm.

[0027] In one embodiment, the half-wavelength of chip L1 is 14nm, the half-wavelength of chip L2 is 49nm, the half-wavelength of chip L3 is 71nm, and the half-wavelength of chip L4 is 19nm.

[0028] In one embodiment, the lighting fixture in the red light band includes at least one first band chip having an emission peak in the band range of 420nm-580nm.

[0029] In one embodiment, the lighting fixture in the red light band includes at least four types of first band chips, wherein the emission peak wavelengths of the four types of first band chips are respectively in the band ranges of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm.

[0030] In one embodiment, the lighting fixtures in the red light band simultaneously perform wavelength conversion matching on the first band chip using phosphors with emission peak wavelengths of 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm, and 655nm±5nm, respectively.

[0031] In one embodiment, the phosphor is mixed in transparent silicone or silicone resin, and the ratio of the phosphor with the corresponding emission peak wavelength to AB silicone within an error range of ±15% is A:B:494nm:535nm:495nm:525nm:655nm=0.35:3.5:0.03:0.764:0.03:0.123:0.19, wherein A and B are two-component silicone or silicone resin.

[0032] According to another aspect of the present invention, the present invention provides a method for emitting light in the red light band, wherein the method for emitting light in the red light band includes the steps of:

[0033] A. Based on the identification of absorption peaks in the solar spectrum that meet certain energy change requirements, the wavelengths of the absorption peaks are used to divide the spectrum into four bands: 650nm to 680nm, 680nm to 730nm, 730nm to 770nm, and 770nm to 810nm.

[0034] B. Select chips or match chips and phosphors based on the divided wavelength range to have emission peaks in the wavelength range of 650nm to 680nm, 680nm to 730nm, 730nm to 770nm, and 770nm to 810nm.

[0035] In one embodiment, in step B, a chip is further selected or a matching chip and phosphor are configured to have an emission peak in a band greater than 810 nm.

[0036] The further objects and advantages of the invention will become fully apparent from the following description and accompanying drawings. Attached Figure Description

[0037] Figure 1 This is a comparison chart of the emission spectrum of an existing high color rendering index LED light source and the solar spectrum.

[0038] Figure 2 The spectrum of sunlight with a color temperature of 5600k in the 350nm-810nm wavelength range.

[0039] Figure 3 This is a schematic diagram of the emission spectrum of a lighting fixture in the red light band according to a first embodiment of the present invention.

[0040] Figure 4 This is a schematic diagram comparing the emission spectrum of the red-light band lighting fixture according to the first embodiment of the present invention with the solar spectrum at a color temperature of 5600k.

[0041] Figure 5 This is a schematic diagram of the emission spectrum of a lighting fixture in the red light band according to a second embodiment of the present invention.

[0042] Figure 6 This is a schematic diagram comparing the emission spectrum of the red-light band lighting fixture according to the second embodiment of the present invention with the spectrum of sunlight at a color temperature of 5600k.

[0043] Figure 7 This is a schematic diagram comparing the emission spectrum of a red-light band lighting fixture according to a preferred embodiment of the present invention with the spectrum of sunlight at a color temperature of 5600k. Detailed Implementation

[0044] The following description is intended to disclose the present invention and enable those skilled in the art to implement it. The preferred embodiments described below are merely examples, and other obvious variations will occur to those skilled in the art. The basic principles of the invention defined in the following description can be applied to other embodiments, modifications, improvements, equivalents, and other technical solutions that do not depart from the spirit and scope of the invention.

[0045] Those skilled in the art should understand that, in the disclosure of this invention, the terms "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, the above terms should not be construed as limiting this invention.

[0046] It is understood that the term "a" should be understood as "at least one" or "one or more", that is, in one embodiment, the number of an element can be one, while in another embodiment, the number of the element can be multiple, and the term "a" should not be understood as a limitation on the number.

[0047] Referring to the accompanying drawings of this invention Figures 2 to 7 This invention identifies absorption peaks in the solar spectrum (650nm-1050nm) that meet certain energy change requirements, divides the spectrum into multiple bands based on these absorption peaks, and provides a red-light-involving lighting fixture. Its emission spectrum matches the aforementioned multiple bands, thus encompassing the red light band. This fills the gap in the red light band of existing lighting fixtures and highly replicates the solar spectrum in the red light band. This makes the actual luminous effect of the red-light-involving lighting fixture more closely resemble that of sunlight, providing artificial lighting comparable to sunlight. This reduces health problems caused by reduced outdoor activities and lack of sunlight exposure in modern society, thus providing healthy lighting.

[0048] Specifically, this invention divides the wavelength range of emission peak wavelength from 650nm to 1050nm into multiple bands with the wavelength of absorption peak as the boundary, and selects chips with emission peaks in the corresponding band or sets up matching chips and phosphors for each band, so as to generate a light emission spectrum close to the spectrum of sunlight in the 650nm to 1050nm wavelength range, thereby making up for the lack of red light in the light emission spectrum of existing lamps and providing healthy lighting.

[0049] In detail, this invention identifies absorption peaks in the solar spectrum that meet certain energy change requirements. It then divides the spectrum into bands with wavelengths of 650nm and 680nm, 730nm and 770nm, and 810nm, using the wavelength of these absorption peaks as boundaries. Chips are selected or matched with phosphors for each band to achieve the desired spectral settings, thereby better reproducing the solar spectrum in the red light band. It is understood that the red-light band lighting fixtures can also have multiple chips with emission peaks in the same band; that is, the number of each type of chip can be set as needed, either multiple or a single chip.

[0050] Specifically, the lighting fixtures in the red light band have emission peaks in the 650nm-680nm band, the 680nm-730nm band, the 730nm-770nm band, and the 770nm-810nm band, based on the chip settings or the chip and phosphor settings, to meet the corresponding spectral settings based on the reasonable selection of the chip or the chip and phosphor, thereby better restoring the spectrum of sunlight in the red light band.

[0051] In this embodiment of the invention, the red-light band lighting fixture includes four types of chips with emission peak wavelengths of 666nm±5nm, 710nm±5nm, 753nm±5nm, and 786nm±5nm, respectively, and are named chip L1, chip L2, chip L3, and chip L4, respectively. That is, the chip with emission peak wavelength of 666nm±5nm is named chip L1, the chip with emission peak wavelength of 710nm±5nm is named chip L2, the chip with emission peak wavelength of 753nm±5nm is named chip L3, and the chip with emission peak wavelength of 786nm±5nm is named chip L4, so that the emission peak of the red light band lighting fixture in the red light band spectrum can be close to the peak of the solar spectrum in the red light band, thereby better reproducing the solar spectrum in the red light band.

[0052] Preferably, the lighting fixture in the red light band further has an emission peak in the band greater than 810nm based on the chip setting or the chip and phosphor setting, so that the lighting fixture in the red light band can supplement the red light band of 650nm-1050nm, making its lighting source closer to sunlight.

[0053] It is worth mentioning that the half-wavelength of the chips L2 and L3 is greater than or equal to 30nm, so as to ensure the spectral continuity of the red light band lighting fixtures in the red light band, effectively reduce the gaps and peaks in the spectrum, and thus better reproduce the spectrum of the corresponding sunlight in the red light band.

[0054] Preferably, the half-wavelength of the chips L2 and L3 is greater than or equal to 45nm, thereby improving the continuity between the emission peaks formed by the chips L1, L2, L3 and L4, avoiding gaps in the emission spectrum of the red-light band lighting fixture, and improving the degree of reproduction of the solar spectrum in the red-light band by the red-light band lighting fixture.

[0055] In particular, the present invention also selects a first-band chip with an emission peak wavelength located in the visible light band, wherein the first-band chip has an emission peak in the band range of 420nm to 580nm, so as to satisfy the coverage of the infrared-involved lighting fixture in the visible light band and ensure the lighting effect of the infrared-involved lighting fixture.

[0056] For details, please refer to Figure 3 and Figure 4 The emission spectrum of the infrared-band lighting fixture according to a first embodiment of the present invention, and its comparison with the spectrum of sunlight at a color temperature of 5600K, are illustrated respectively. Specifically, in the first embodiment of the present invention, the emission peak wavelength of chip L1 is 666nm, the emission peak wavelength of chip L2 is 710nm, the emission peak wavelength of chip L3 is 755nm, and the emission peak wavelength of chip L4 is 783nm.

[0057] Specifically, in the first embodiment of the present invention, the half-wavelength of chip L1 is 14 nm, the half-wavelength of chip L2 is 49 nm, the half-wavelength of chip L3 is 51 nm, and the half-wavelength of chip L4 is 19 nm. This improves the continuity between the emission peaks of two adjacent chips, avoids gaps in the emission spectrum of the red-light luminaire in the red light band, and ensures that the red-light luminaire has a continuous emission spectrum in the 650 nm-810 nm band, thereby improving the degree of reproduction of the solar spectrum in the red light band. It is understood that the half-wavelength of each chip is allowed to have a reasonable fluctuation range of ±5 nm.

[0058] It is worth mentioning that, in the first embodiment of the present invention, the emission peak wavelength of the first band chip is selected from one of 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm, so as to match the peak distribution of the solar spectrum in the visible light band, thereby ensuring the lighting effect of the lighting fixture in the red light band.

[0059] Specifically, the red-light band lighting fixture includes at least four types of first-band chips, and the emission peak wavelengths of the four types of first-band chips are in the band range of 425nm±5nm, 445nm±5nm, 455nm±5nm, and 470nm±5nm. That is to say, the red-light band lighting fixture has four types of first-band chips with emission peak wavelengths located in the bands of 425nm±5nm, 445nm±5nm, 455nm±5nm, and 470nm±5nm, respectively. This enables the emission spectrum of the red-light band lighting fixture to approach the solar spectrum, so as to better reproduce the corresponding solar spectrum.

[0060] It is worth mentioning that at least one of the first band chips has a half-wave width greater than or equal to 17nm. Based on the wide half-wave setting of at least one first band chip, the continuity of the spectrum is improved, so that the red light band has a continuous emission spectrum in the band range of 420nm-580nm, thereby improving the matching degree between the lighting fixtures in the red light band and the solar spectrum.

[0061] Specifically, to optimize the matching between the emission spectrum of the lighting fixtures in the red-light band and the solar spectrum, the present invention also performs wavelength conversion matching on the first band chip using the transparent silicone or silicone resin and phosphor ratios shown in the table below:

[0062] A B Phosphor 494nm Phosphor 535nm Phosphor 495nm Phosphor 655nm Phosphor 525nm 0.35 3.5 0.03 0.764 0.03 0.123 0.19

[0063] In the table above, the emission peak wavelength of the phosphors is allowed to fluctuate within a range of ±5nm, and the corresponding phosphor ratio is allowed to fluctuate within a range of ±15% based on the values ​​exemplified in the table. This invention does not limit these variations. Specifically, in this embodiment of the invention, phosphors with emission peak wavelengths at 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm, and 655nm±5nm are used simultaneously for wavelength conversion matching of the first band chip. Here, A and B are two-component silicone or silicone resin.

[0064] It is worth mentioning that, in the first embodiment of the present invention, the radiation power of the lighting fixture in the red light band is approximately 2000mW. After selecting the aforementioned chip and the first band chip, and through simulation calculation and actual measurement optimization, the radiation power of the first band chip accounts for 1600mW to 1800mW. The radiation power of chip L1 is approximately 11.5mW, the radiation power of chip L2 is approximately 150mW, the radiation power of chip L3 is approximately 165mW, the radiation power of chip L4 is approximately 55mW, and the total radiated luminous flux is 2081.5mW.

[0065] refer to Figure 3 and Figure 4 It is understood that the emission spectrum of the red-light band lighting fixture in this embodiment of the present invention can present the distribution and composition pattern of the corresponding peak of the solar spectrum with a color temperature of 5600k, making up for the lack of existing lighting fixtures in the red light band. This allows the emission spectrum of the red-light band lighting fixture to better reproduce the corresponding solar spectrum, reducing the health problems caused by the reduced outdoor activities and lack of sunlight exposure in modern society, and providing healthy lighting.

[0066] Further, refer to Figure 5 and Figure 6 The emission spectrum of the infrared-band lighting fixture according to a second embodiment of the present invention, and its comparison with the spectrum of sunlight at a color temperature of 5600K, are illustrated respectively. Specifically, in the second embodiment of the present invention, the emission peak wavelength of chip L1 is 670nm, the emission peak wavelength of chip L2 is 710nm, the emission peak wavelength of chip L3 is 755nm, and the emission peak wavelength of chip L4 is 783nm.

[0067] Specifically, in this embodiment, the half-wavelength of chip L1 is 14 nm, the half-wavelength of chip L2 is 49 nm, the half-wavelength of chip L3 is 71 nm, and the half-wavelength of chip L4 is 19 nm. This improves the continuity between the emission peaks of two adjacent chips, avoids gaps in the emission spectrum of the red-light band lighting fixture, and enhances the reproduction of the sunlight spectrum in the red-light band. It is understood that the half-wavelength of each chip is allowed to have a reasonable fluctuation range of ±5 nm.

[0068] It is worth mentioning that, in the second embodiment of the present invention, the lighting fixture in the red-light band also uses at least four first-band chips with emission peak wavelengths in the band ranges of 425nm±5nm, 445nm±5nm, 455nm±5nm, and 470nm±5nm respectively to match the peak distribution of the solar spectrum in the visible light band. That is, the lighting fixture in the red-light band has four first-band chips with emission peak wavelengths in the band ranges of 425nm±5nm, 445nm±5nm, 455nm±5nm, and 470nm±5nm respectively, thereby enabling the emission spectrum of the lighting fixture in the red-light band to approach the solar spectrum, so as to better reproduce the corresponding solar spectrum.

[0069] Specifically, at least one of the first-band chips has a half-wave width greater than or equal to 17 nm, so as to improve the continuity of the spectrum and enhance the matching degree between the lighting fixtures in the red light band and the solar spectrum based on the wide half-wave setting of at least one first-band chip.

[0070] Similarly, to optimize the matching between the emission spectrum of the lighting fixtures in the red-light band and the solar spectrum, the present invention also performs wavelength conversion matching on the first band chip using the transparent silicone or silicone resin and phosphor ratios shown in the table below:

[0071] A B Phosphor 494nm Phosphor 535nm Phosphor 495nm Phosphor 655nm Phosphor 525nm 0.35 3.5 0.03 0.764 0.03 0.123 0.19

[0072] In the table above, the emission peak wavelength of the phosphors is allowed to fluctuate within a range of ±5nm, and the corresponding phosphor ratio is allowed to fluctuate within a range of ±15% based on the values ​​exemplified in the table. This invention does not limit these variations. Specifically, in this embodiment of the invention, phosphors with emission peak wavelengths at 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm, and 655nm±5nm are used simultaneously for wavelength conversion matching of the first band chip. Here, A and B are two-component silicone or silicone resin.

[0073] It is worth mentioning that, in the second embodiment of the present invention, the radiation power of the lighting fixture in the red light band is about 2000mW. After the selection of the chip and the first band chip in the second embodiment, and after simulation calculation and actual measurement optimization, the radiation power of the first band chip accounts for 1600mW to 1800mW. The radiation power of chip L1 is about 16mW, the radiation power of chip L2 is about 150mW, the radiation power of chip L3 is about 220mW, the radiation power of chip L4 is about 38mW, and the total radiated luminous flux is 2124mW.

[0074] refer to Figure 5 and Figure 6 It is understood that the emission spectrum of the red-light band lighting fixture in the second embodiment can present the distribution pattern of the corresponding peak of the solar spectrum with a color temperature of 5600k, making up for the lack of existing lighting fixtures in the red light band. This allows the emission spectrum of the red-light band lighting fixture to better reproduce the corresponding solar spectrum, reducing the health problems caused by the lack of sunlight exposure due to reduced outdoor activities in modern society, and providing healthy lighting.

[0075] To further understand the present invention, the present invention also provides a method for emitting light in the red light band, wherein the method for emitting light in the red light band includes the following steps:

[0076] A. Based on the identification of absorption peaks in the solar spectrum that meet certain energy change requirements, the wavelengths of the absorption peaks are used to divide the spectrum into four bands: 650nm to 680nm, 680nm to 730nm, 730nm to 770nm, and 770nm to 810nm.

[0077] B. Select chips or match chips and phosphors based on the divided wavelength range to have emission peaks in the wavelength range of 650nm to 680nm, 680nm to 730nm, 730nm to 770nm, and 770nm to 810nm.

[0078] It is worth mentioning that the method for emitting light in the red light band includes step C, selecting at least one first-band chip with an emission peak in the band range of 420nm to 580nm to match the peak distribution of the solar spectrum in the visible light band, thereby ensuring the lighting effect of the lighting fixtures in the red light band.

[0079] Preferably, in step B, a chip or a matching chip and phosphor are further selected to have an emission peak in a wavelength band greater than 810nm, so that the red-light luminaire can supplement the red light band of 650nm-1050nm, making its lighting source closer to sunlight. Specifically, refer to Figure 7 As shown, the emission spectrum of the red-light band lighting fixture of the present invention exhibits a distribution pattern of the corresponding peaks of the solar spectrum. In particular, it can approach the solar spectrum in the wavelength range greater than 650nm, which can better reproduce the corresponding solar spectrum and reduce the health problems caused by the lack of sunlight exposure due to reduced outdoor activities in modern society, so as to provide healthy lighting.

[0080] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0081] Those skilled in the art should understand that the embodiments of the present invention described above and shown in the accompanying drawings are merely examples and do not limit the present invention. The objectives of the present invention have been fully and effectively achieved. The functions and structural principles of the present invention have been demonstrated and explained in the embodiments, and any variations or modifications may be made to the implementation of the present invention without departing from the stated principles.

Claims

1. A lighting fixture that operates in the red light band, characterized in that, Based on the identification of absorption peaks in the solar spectrum that meet certain energy change requirements, the wavelengths of the absorption peaks are used to divide the wavelength ranges into 650nm-680nm, 680nm-730nm, 730nm-770nm, and 770nm-810nm. The lighting fixtures in the red light band, based on the chip configuration or the chip and phosphor configuration, have emission peaks in the 650nm-680nm wavelength range, the 680nm-730nm wavelength range, the 730nm-770nm wavelength range, and the 770nm-810nm wavelength range.

2. The lighting fixture in the red light band according to claim 1, wherein the lighting fixture in the red light band further has an emission peak in a band greater than 810 nm based on the chip configuration or the chip and phosphor configuration.

3. The lighting fixture in the red light band according to claim 2, wherein the lighting fixture in the red light band comprises four chips with emission peak wavelengths of 666nm±5nm, 710nm±5nm, 753nm±5nm and 786nm±5nm respectively, and are named chip L1, chip L2, chip L3 and chip L4 respectively, wherein the half-wavelength of chip L2 and chip L3 is greater than or equal to 30nm.

4. The lighting fixture in the red light band according to claim 3, wherein the half-wavelength of the chip L2 and the chip L3 is greater than or equal to 45nm.

5. The lighting fixture in the red light band according to claim 3, wherein the peak emission wavelength of chip L1 is 666nm, the peak emission wavelength of chip L2 is 710nm, the peak emission wavelength of chip L3 is 755nm, and the peak emission wavelength of chip L4 is 783nm.

6. The lighting fixture in the red light band according to claim 5, wherein the half-wavelength of chip L1 is 14nm, the half-wavelength of chip L2 is 49nm, the half-wavelength of chip L3 is 51nm, and the half-wavelength of chip L4 is 19nm.

7. The lighting fixture in the red light band according to claim 3, wherein the peak emission wavelength of chip L1 is 670nm, the peak emission wavelength of chip L2 is 710nm, the peak emission wavelength of chip L3 is 755nm, and the peak emission wavelength of chip L4 is 783nm.

8. The lighting fixture in the red light band according to claim 7, wherein the half-wavelength of chip L1 is 14nm, the half-wavelength of chip L2 is 49nm, the half-wavelength of chip L3 is 71nm, and the half-wavelength of chip L4 is 19nm.

9. The lighting fixture in the red light band according to any one of claims 1 to 8, wherein the lighting fixture in the red light band includes at least one first band chip having an emission peak in the band range of 420nm-580nm.

10. The lighting fixture in the red light band according to claim 9, wherein the lighting fixture in the red light band includes at least four types of first band chips, wherein the emission peak wavelengths of the four types of first band chips are 425nm±5nm, 445nm±5nm, 455nm±5nm and 470nm±5nm respectively.

11. The lighting fixture in the red light band according to claim 10, wherein the lighting fixture in the red light band uses phosphors with emission peak wavelengths of 494nm±5nm, 535nm±5nm, 495nm±5nm, 525nm±5nm and 655nm±5nm to simultaneously perform wavelength conversion matching on the first band chip.

12. The lighting fixture for the infrared light band according to claim 11, wherein the phosphor is mixed in transparent silicone or silicone resin, and the ratio of the phosphor with the corresponding emission peak wavelength to the AB silicone within an error range of ±15% is A:B:494nm:535nm:495nm:525nm:655nm=0.35:3.5:0.03:0.764:0.03:0.123:0.19, wherein A and B are two-component silicone or silicone resin.

13. A method for emitting light in the red light band, characterized in that, Including the following steps: A. Based on the identification of absorption peaks in the solar spectrum that meet certain energy change requirements, the wavelengths of the absorption peaks are used to divide the spectrum into four bands: 650nm to 680nm, 680nm to 730nm, 730nm to 770nm, and 770nm to 810nm. B. Select chips or match chips and phosphors based on the divided wavelength range to have emission peaks in the wavelength range of 650nm to 680nm, 680nm to 730nm, 730nm to 770nm, and 770nm to 810nm.

14. The method for emitting light in the red light band according to claim 13, wherein in step B, a chip is further selected or a matching chip and phosphor are configured to have an emission peak in a band greater than 810 nm.

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