Two-dimensional code coding method and system for DRAM particle repair mapping

Abstract

The invention relates to the technical field of semiconductor memory repair, in particular to a two-dimensional code encoding method and system for DRAM particle repair mapping. Comprising the following steps: determining a total block number and an allowable damaged block number, and setting a coding rule containing block state information and verification information; the to-be-tested particles are tested, and the positions of damaged blocks are identified; generating repair data according to a coding rule, and calculating a check byte by adopting an extended Hamming code; coding information is converted into two-dimensional codes and the two-dimensional codes are printed on the surfaces of the particles through laser; performing code scanning and reading on a production line, performing verification and error correction, automatically correcting a single-bit error, prompting a double-bit error to re-scan the code, and writing the code into a storage area; and reading the repair data from the storage area during application, performing verification and error correction again, and executing block mapping. Through a double-stage error correction protection mechanism, reliable transmission of repair data is ensured, and the particle utilization rate is remarkably improved.

Description

TECHNICAL FIELD

[0001] The application relates to the field of semiconductor memory repair technology, in particular to a two-dimensional code encoding method and system for DRAM particle repair mapping. BACKGROUND

[0002] Chip marking technology forms permanent marks on the surface of products by means of laser and the like, and the core goal thereof is to realize high-precision, high-durability and key information-containing marking. The technology is widely applied in the semiconductor industry and is of great significance to the traceability management and function repair of chips.

[0003] With the increasing smallness of chip area, the surface area of a packaged DRAM particle is also increasingly small, and the area available for laser printing is limited. The more detailed the repair data is, the larger the data volume is, and the higher the repair rate is, but a large data volume can result in excessively small size of a single code element of a two-dimensional code. Since the surface of the particle is usually black, the excessively small code element can make the image unclear and difficult to identify. In addition, in the process of code scanning reading and data transmission, factors such as photoelectric conversion error and electromagnetic interference can easily cause data error codes, affecting the accuracy of repair information. In the prior art, only basic information such as a serial number is usually printed on the surface of the particle, and repair data content is lacking, resulting in that a large number of particles with partially failed blocks cannot be effectively utilized and are discarded. SUMMARY

[0004] The application provides a two-dimensional code encoding method and system for DRAM particle repair mapping, which solves the problems of limited surface space of the particle and easy data transmission error, and improves the utilization rate of the particle.

[0005] To achieve the above-mentioned purpose, the application provides the following technical solution: The application provides a two-dimensional code encoding method for DRAM particle repair mapping, which comprises the following steps: S100: determining the total number of blocks of a DRAM particle, the number of allowed damaged blocks, and setting an encoding rule containing block state information and check information; S200: testing the DRAM particle to be tested and identifying the positions of damaged blocks; S300: generating repair data according to the encoding rule and the identified positions of the damaged blocks, and calculating check bytes of the repair data by using extended Hamming code; S400: converting the encoding information containing the repair data and the check bytes into a two-dimensional code, and printing the two-dimensional code on the surface of the DRAM particle by means of laser; S500: reading the two-dimensional code on the surface of the DRAM particle by means of a code scanning device on a production line, checking and correcting the read data, automatically correcting single-bit errors and writing the corrected data into a storage area, prompting to re-scan when double-bit errors are detected, and writing correct data into the storage area until correct data is obtained; S600: reading the repair data from the storage area, checking and correcting the repair data, and performing block mapping according to the corrected repair data.

[0006] As a preferred technical solution of the present application, the encoding rule comprises: The first byte is the total number of blocks; The second byte is the number of allowed damaged blocks; The third byte to the Nth byte constitute a block state byte group, each bit in the block state byte group corresponds to the state of a block; The N+1th byte is a check byte.

[0007] As a preferred technical solution of the present application, each bit in the block state byte group is represented by binary to indicate the pass or fail state of the corresponding block.

[0008] As a preferred technical solution of the present application, the extended Hamming code is a SECDED code.

[0009] As a preferred technical solution of the present application, the step of calculating the check byte of the repair data using the extended Hamming code comprises: Performing extended Hamming code encoding operation on the first byte to the Nth byte to generate the check byte.

[0010] As a preferred technical solution of the present application, the step of performing block mapping according to the corrected repair data comprises: Parsing the block state byte group in the corrected repair data to determine the state of each block; Identifying the position of the failed block according to the block state; Masking or redirecting the access to the failed block when accessing the address.

[0011] The present application also includes a two-dimensional code encoding system for DRAM particle repair mapping, comprising: A rule definition module for determining the total number of blocks of a DRAM particle, the number of allowed damaged blocks, and setting an encoding rule containing block state information and check information; A defect detection module for testing a to-be-tested DRAM particle to identify the position of the damaged block; A data encoding module for generating repair data according to the encoding rule and the identified damaged block position, and calculating a check byte of the repair data using an extended Hamming code; A laser marking module for converting the encoding information containing the repair data and the check byte into a two-dimensional code, and printing the two-dimensional code on the surface of the DRAM particle by laser; The code scanning writing module is configured to read a two-dimensional code on the surface of a DRAM particle through a code scanning device on a production line, check and correct the read data, write the data into a storage area after automatic correction when a single-bit error is detected, and prompt to rescan the code when a double-bit error is detected until correct data is obtained and written into the storage area. The mapping repair module is configured to read repair data from the storage area when the repair data is applied, check and correct the repair data, and perform block mapping according to the corrected repair data.

[0012] The application also includes a computer device including a memory, a processor, and a computer program stored on the memory and executable on the processor, and the processor implements the DRAM particle repair mapping two-dimensional code encoding method described above when executing the computer program.

[0013] The application also includes a readable storage medium having a computer program stored thereon, and the computer program implements the DRAM particle repair mapping two-dimensional code encoding method described above when executed by a processor.

[0014] The application has the following beneficial effects: 1. The application effectively controls the amount of repair data by designing a compact encoding structure containing block state byte groups and check bytes, so that the two-dimensional code can be clearly printed and recognized on the limited surface of the particle, and the contradiction between limited surface space and repair information integrity is solved.

[0015] 2. The application uses SECDED extended Hamming code to check and correct in two stages of code scanning writing and running reading, respectively, to build a double error protection mechanism, to specifically deal with photoelectric conversion error codes and electromagnetic interference error codes, and to ensure reliable transmission of repair data throughout the process.

[0016] 3. The application records the repair data in the form of a two-dimensional code on the surface of the particle and combines two-stage error correction protection, so that the DRAM particle originally discarded due to partial block failure can be reused through block mapping technology, significantly improving the utilization rate and economic value of the particle. BRIEF DESCRIPTION OF DRAWINGS

[0017] The accompanying drawings are included to provide a further understanding of the application, and constitute a part of the specification, illustrate the application, and are used to explain the application together with embodiments of the application, and do not constitute a limitation on the application. In the drawings: Figure 1 is a flowchart of a DRAM particle repair mapping two-dimensional code encoding method of the application; Figure 2 is a structural diagram of a DRAM particle repair mapping two-dimensional code encoding system of the application; Figure 3This is a schematic diagram of the DRAM chip test results of the present invention; Figure 4 This is the data encoding table for repair in this invention; Figure 5 This is a QR code identification image on the surface of the particles of this invention; Figure 6 This is a physical image of the PCBA board of this invention. Detailed Implementation

[0018] The preferred embodiments of the present invention will be described below with reference to the accompanying drawings. It should be understood that the preferred embodiments described herein are for illustration and explanation only and are not intended to limit the present invention.

[0019] Example 1: As Figure 1 As shown, the present invention provides a QR code encoding method for DRAM chip repair mapping, comprising: S100: Determine the total number of DRAM chips, the number of allowed damaged blocks, and set encoding rules that include block status information and verification information; Furthermore, the encoding rules include: The first byte indicates the total number of blocks; The second byte indicates the number of allowed corrupted blocks; The third byte to the Nth byte constitute the block status byte group, and each bit in the block status byte group corresponds to the status of a block; The (N+1)th byte is the check byte.

[0020] Furthermore, each bit in the block status byte group uses a binary value to represent the pass or fail status of the corresponding block.

[0021] Specifically, in order to rationally plan the data structure of the mapping table and balance the amount of data written with the effective repair rate, the encoding rules set by this invention adopt the following byte structure: Byte0 (first byte): The total number of blocks, i.e., the total number of blocks in the DRAM chip.

[0022] Byte1 (second byte): How many blocks are allowed to be corrupted, i.e., records the number of allowed corrupted blocks.

[0023] Byte2 to ByteN (third byte to Nth byte): constitute a block state byte group, a total of N-1 bytes, record the pass / fail situation of each Block. Each bit (bit) in the block state byte group represents the state of a Block, using binary representation: 0=pass (pass), 1=fail (failure). In the block state mapping, the Block number starts from 1, and bit 0 of the block state byte group corresponds to Block 1, bit 1 corresponds to Block 2, bit 2 corresponds to Block 3, and so on.

[0024] ByteN+1 (N+1th byte): is a check byte, which is generated by SECDED (extended hamming code) encoding operation on Byte0 to ByteN. The check byte can correct any 1-bit error and detect any 2-bit error.

[0025] The entire encoded data structure contains a total of N+1 bytes.

[0026] Through the above encoding rule, the number of supported repairs can be flexibly defined, so that the mapping two-dimensional code can be clearly and easily read by the code gun and written into the storage area. The design of this data structure controls the data volume while ensuring the integrity of the repair information, avoiding the problem of unclear and difficult to identify image due to the too small size of a single code element of the two-dimensional code.

[0027] S200: Test the to-be-tested DRAM particle to identify the location of the damaged block; Specifically, the to-be-tested DRAM particle is placed on the FT (Final Test) machine for testing, and the test program performs function testing on each Block of the particle to identify the location of the defective Block. During the testing process, read and write verification is performed on each Block, and the Block that fails the test is marked as a damaged block, and its location information is recorded.

[0028] Through the FT test, the complete Block state information of the to-be-tested particle can be obtained, including which Block is pass (pass) and which Block is fail (failure), which provides a basis for the generation of subsequent repair data.

[0029] S300: Generate repair data according to the encoding rule and the identified damaged block location, and calculate a check byte for the repair data using an extended hamming code; Further, the extended hamming code is SECDED encoding.

[0030] Further, the step of calculating a check byte for the repair data using an extended hamming code comprises: The first byte to the Nth byte are subjected to an extended Hamming code encoding operation to generate the check byte.

[0031] Specifically, according to the encoding rule set in step S100, in combination with the damaged block position information identified in step S200, the repair data is generated in the following manner: First, the total number of blocks is filled in the first byte (Byte0), and the allowed number of damaged blocks is filled in the second byte (Byte1).

[0032] Then, according to the identified damaged block position, a block status byte group (Byte2 to ByteN) is constructed. In the block status byte group, each bit corresponds to the status of a Block, and the bit corresponding to the Block that passes the test is set to 0, and the bit corresponding to the damaged Block is set to 1.

[0033] Next, the extended Hamming code is used to calculate the check byte of the repair data. Specifically, the extended Hamming code is SECDED (Single Error Correction Double Error Detection) encoding. The steps of calculating the check byte include: taking the first byte to the Nth byte (Byte0 to ByteN) as data bits, performing SECDED encoding operation on these data bits to generate a check byte, and filling the check byte into the N+1th byte (ByteN+1).

[0034] SECDED encoding realizes single-bit error correction and double-bit error detection by calculating multiple check bits. For data bits containing multiple bytes, they are unfolded by bit, and the position number starts from 1 and increases sequentially. The calculation of the check bits is based on the Hamming code principle, and each check bit covers the data bits at a certain position: The check bit P1 covers all data bits whose position number is true when performing bitwise AND operation with 0x01; The check bit P2 covers all data bits whose position number is true when performing bitwise AND operation with 0x02; The check bit P4 covers all data bits whose position number is true when performing bitwise AND operation with 0x04; The check bit P8 covers all data bits whose position number is true when performing bitwise AND operation with 0x08; The check bit P16 covers all data bits whose position number is true when performing bitwise AND operation with 0x10; The check bit P32 covers all data bits whose position number is true when performing bitwise AND operation with 0x20; The check bit P0 is the total parity check bit, which is exclusive-ORed with all data bits and the above six check bits P1, P2, P4, P8, P16, P32.

[0035] The value of each check bit is the result of exclusive or operation of all data bits covered by the check bit, and the calculated check bits are assembled into a check byte.

[0036] In the error correction stage, the above-mentioned six Hamming check bits P1, P2, P4, P8, P16 and P32 are recalculated for the received data, the calculation result is subjected to exclusive or operation with the received corresponding check bits to obtain a companion formula, and the total parity check bit is combined to judge the error type: if the companion formula is 0 and the total parity check passes, there is no error; if the companion formula is not 0 and the total parity check fails, it is a single-bit error, and the value of the companion formula indicates the position of the error bit, which can be corrected by flipping the bit; if the companion formula is not 0 but the total parity check passes, it is a double-bit error, which can only be detected and cannot be corrected.

[0037] The generated check byte can correct any 1-bit error and detect any 2-bit error in the subsequent data transmission and reading process, thereby providing reliable error protection for repairing data.

[0038] At this point, the complete repair data encoding is generated, and a total of N+1 bytes are included.

[0039] S400: converting the encoding information containing the repair data and the check byte into a two-dimensional code, and printing the two-dimensional code on the surface of the DRAM particle by laser; Specifically, the complete repair data encoding (including the first byte to the N+1th byte, i.e., Byte0 to ByteN+1) generated in step S300 is converted into a two-dimensional code format. The two-dimensional code encoding adopts a standard two-dimensional code generation algorithm to convert the repair data encoding into a visual two-dimensional code pattern.

[0040] Then, the two-dimensional code is printed on the surface of the DRAM particle using laser marking technology. Laser marking uses a high-energy-density laser beam to perform micron-level engraving or annealing on the surface of the chip to form a recessed or discolored mark. This technology has the characteristics of non-contact processing, no consumables, high contrast, etc., and can form a permanent and clearly identifiable mark on the surface of the particle.

[0041] During the laser marking process, the energy density and average power of the laser are adjusted to ensure that a clear two-dimensional code pattern is formed on the surface of the DRAM particle. Since the encoding rule adopted by the present application effectively controls the data volume, the size of a single code element of the two-dimensional code is moderate. Even in the case that the surface of the particle is black, the laser-printed two-dimensional code image can still maintain sufficient clarity, which is convenient for subsequent code scanning equipment to recognize and read.

[0042] The repair data two-dimensional code is printed on the surface of the particle by laser, which fully utilizes the spare area on the surface of the particle to record repair information, thereby providing a reliable repair data carrier for the subsequent production and application stages.

[0043] S500: reading the two-dimensional code on the surface of the DRAM particle through a code scanning device on the production line, checking and correcting the read data, automatically correcting when a single-bit error is detected, writing into the storage area, prompting to re-scan when a double-bit error is detected, until the correct data is obtained and written into the storage area; Specifically, after the DRAM particle is pasted on the PCB to form the PCBA, a code scanning station is arranged on the production line, and a code scanning device (such as a code scanning gun) is used to read the repair data two-dimensional code on the surface of the DRAM particle.

[0044] The code scanning device reads the two-dimensional code information through photoelectric conversion, and obtains complete encoding data containing repair data and check bytes. Since the code scanning process is read in the air, there may be errors in the photoelectric conversion process, so the read data needs to be checked and corrected.

[0045] Specifically, the first byte to the Nth byte (Byte0 to ByteN) read is checked by SECDED using the check byte of the N+1th byte (ByteN+1). The checking process is as follows: When a single-bit error is detected, the SECDED error correction function is used to locate the error bit position according to the check byte, and the bit is flipped (0 to 1 or 1 to 0), thereby automatically correcting the error and writing the corrected data into the storage area. The entire error correction process is user-agnostic.

[0046] When a double-bit error is detected, the SECDED error detection function is used to identify that the data read this time has an error but cannot be automatically corrected. At this time, the code scanning interface prompts "code scanning error" or similar error information, and the user is prompted to scan again. The above checking and correction process is repeated until the correct data is read and successfully written into the storage area.

[0047] Through the above checking and correction mechanism, the data error problem caused by photoelectric conversion, laser printing not clear enough or scanning light not equal in the code scanning process is effectively solved, and the repair data written into the storage area is accurate and correct.

[0048] S600: When applied, read the repair data from the storage area, check and correct the repair data, and perform block mapping according to the corrected repair data.

[0049] Further, the step of performing block mapping according to the corrected repair data comprises: parsing the block state byte group in the corrected repair data to determine the state of each block; identifying the position of the failed block according to the block state; masking or redirecting access to the failed block when accessing the address.

[0050] Specifically, after the mainboard is normally powered on, the SOC (System on Chip) reads the repair data from the storage area. Due to the influence of electromagnetic interference or voltage fluctuation during reading in the storage area, the read data may have error codes, so it is necessary to check and correct the repair data again.

[0051] Specifically, the first byte to the Nth byte (Byte0 to ByteN) read is checked by SECDED using the check byte of the N+1th byte (ByteN+1). The checking process is similar to step S500: When a single-bit error is detected, the SECDED error correction function is used to locate the error bit position according to the check byte, and the bit is flipped to automatically correct the error and correct the data to the correct data, which is not perceived by the user.

[0052] When a double-bit error is detected, the SECDED error detection function is used to identify that the data read this time has an error but cannot be automatically corrected. At this time, the "data read error" or similar error information is prompted through the serial port or other ways, and the user is required to re-scan the code and write the correct data to the storage area.

[0053] After completing the check and correction, the block mapping is performed according to the corrected repair data. The steps of block mapping include: First, parse the block state byte group (Byte2 to ByteN) in the corrected repair data to determine the state of each Block. By reading each bit in the block state byte group, identify which Block is passed (bit=0) and which Block is failed (bit=1).

[0054] Then, identify the position of the failed block according to the block state. Mark the Block with bit=1 in the block state byte group as a failed block and record its position information.

[0055] Finally, the access to the failed block is shielded or redirected when accessing the address. When the system access address is mapped to the failed block, the access is shielded or redirected to other available blocks through the block mapping mechanism, thereby avoiding the use of failed blocks and achieving the repair of DRAM particles.

[0056] Through the above checking and correction and block mapping process, the error code problem caused by electromagnetic interference or voltage fluctuation during operation is effectively addressed, ensuring accurate execution of repair mapping, so that the DRAM particles with failed blocks can be normally used.

[0057] Example two: In the DRAM chip manufacturing process, due to process defects or material problems, some particles may have individual block failure. These particles are usually determined as waste and directly scrapped, causing significant economic loss. As the chip area becomes smaller and smaller, the surface area of the packaged particle also becomes smaller and smaller. How to record the repair data in the limited surface space while ensuring the reliability of the data in the transmission and reading process has become a key technical problem to improve the utilization of particles.

[0058] The embodiment aims at the above problems, and adopts a two-dimensional code encoding method and system for DRAM particle repair mapping of the application. As shown in the figure, Figure 2 The system includes a rule definition module, a defect detection module, a data encoding module, a laser marking module, a code scanning and writing module, and a mapping repair module. The technical solutions of the application are shown through specific examples.

[0059] The first part is the test and encoding process. A certain 4GB DRAM particle adopts an 8-division block mode, allowing a maximum of 2 damaged blocks.

[0060] The rule definition module determines that the total number of blocks of the particle is 8, and the number of allowed damaged blocks is 2. The encoding rule is set as: Byte0 = 0x08 (total number of blocks); Byte1 = 0x02 (allowed number of damaged blocks); Byte2: 8 bits corresponding to the state of 8 blocks; Byte3: check byte (SECDED encoding).

[0061] As shown in the figure, Figure 3 The defect detection module tests a plurality of particles in the FT test. For the 1st particle, it is found that Block 2 is damaged (marked in red), and the remaining blocks pass; for the 2nd particle, it is found that Block 7 is damaged (marked in red), and the remaining blocks pass. The data encoding module generates repair data according to the test results.

[0062] As shown in the figure, Figure 4 For the 1st particle, the damaged block is Block 2, the total number of damaged blocks is 1, and the generated complete repair data is encoded as: 08 02 02 00 38. For the 2nd particle, the damaged block is Block 7, the total number of damaged blocks is 1, and the generated complete repair data is encoded as: 08 02 40 00 32.

[0063] As shown in the figure, Figure 5 The laser marking module converts the repair data into a two-dimensional code and prints it on the surface of the DRAM particle. Since the amount of encoded data is reasonably controlled, the size of the two-dimensional code is moderate, and it can be clearly identified even on a black packaging surface.

[0064] As shown in Figure 6 , the DRAM particles are pasted onto the PCB to form a PCBA. On the production line, the code scanning and writing module reads the two-dimensional code on the surface of the particles through a code scanning device.

[0065] To further illustrate the two-stage error correction protection mechanism of the present application, the following will demonstrate by assuming a scenario.

[0066] Suppose the repair data of a certain particle is encoded as 0802020038. During the code scanning process, due to photoelectric conversion error, Byte0 has a single-bit error, and the actual read data becomes: 1802020038 (error data). The code scanning and writing module uses the check byte 0x38 to perform SECDED checking, detects the single-bit error and locates the error position, automatically flips the bit to correct it, restores it to the correct data: 0802020038, and then writes it to the storage area. The entire error correction process is user-agnostic.

[0067] Suppose the repair data of another particle is encoded as 0802400032. During the code scanning, due to unclear laser printing or incorrect scanning light, the actual read data is: 1812400032 (Byte0 and Byte1 each have 1 bit error, a total of 2 bit errors). The code scanning and writing module detects double-bit errors through SECDED and prompts "code scanning error" through the code scanning interface, requiring the operator to rescan until the correct data is read and written to the storage area.

[0068] After the motherboard is powered on, the mapping repair module reads the repair data from the storage area. Suppose that when reading the repair data encoded as 0802020038, due to electromagnetic interference, Byte0 has a single-bit error, and the read data becomes: 1802020038. The mapping repair module uses the check byte 0x38 to perform SECDED checking again, detects the single-bit error and automatically corrects it, restores it to the correct data: 0802020038, and the user is unaware.

[0069] Then, the mapping repair module parses the repair data: the total block number is 8, and the allowed damaged block number is 2. Taking the encoded 0802020038 as an example, Byte2 = 0x02, binary is 00000010, bit 1 is 1, indicating that Block 2 is invalid. Since the actual number of damaged blocks (1) does not exceed the allowed value (2), the particle can be repaired and used. The mapping repair module will shield or redirect access to Block 2 when accessing the address, thereby avoiding the invalid block and enabling the DRAM particle to work normally.

[0070] It can be seen from the embodiment that the application repairs the data two-dimensional code on the particle surface by laser printing, fully utilizes the free area of the particle surface to record the repair information, and repairs the originally unusable particles into usable particles. The SECDED encoding is used to generate the check bytes, and the check and error correction are performed in the two stages of code scanning and writing and mapping repair, so that the data error problems caused by photoelectric conversion, laser printing definition, electromagnetic interference, voltage fluctuation and the like are effectively solved, and the reliable transmission and accurate execution of the repair data are ensured. The small data amount and strong fault tolerance of the encoding structure make the two-dimensional code easy to print and identify on the particle surface, single-bit error can be automatically corrected without user awareness, double-bit error is detected in time and prompts the reoperation, and the utilization rate of the particles is significantly improved, and considerable economic value is generated.

[0071] Embodiment three The third embodiment of the application is based on the same inventive concept, and the application provides a computer readable storage medium storing a computer program, and the computer program is executed by a processor to realize the steps of the DRAM particle repair mapping two-dimensional code encoding method of the above-mentioned embodiment.

[0072] Embodiment four The fourth embodiment of the application is based on the same inventive concept, and the application provides a computer device, which comprises a processor and a memory, the processor and the memory communicate with each other, the memory is used for storing instructions, and the processor is used for executing the instructions in the memory to execute the DRAM particle repair mapping two-dimensional code encoding method of the above-mentioned embodiment.

[0073] Finally, it should be noted that: the above only describes the preferred embodiments of the application and is not used to limit the application, although the application has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions recorded in the foregoing embodiments or make equivalent replacement for part of the technical features. Any modification, equivalent replacement, improvement and the like made within the spirit and principles of the application shall be included in the protection scope of the application.

Claims

1. A QR code encoding method for DRAM chip repair mapping, characterized in that, The method comprises the following steps: S100: determining the total number of blocks of a DRAM particle, the number of allowed damaged blocks, and setting an encoding rule containing block state information and check information; S200: testing the DRAM particle to be tested to identify the positions of damaged blocks; S300: generating repair data according to the encoding rule and the identified positions of damaged blocks, and calculating check bytes of the repair data by using an extended Hamming code; S400: converting the encoding information containing the repair data and the check bytes into a two-dimensional code, and printing the two-dimensional code on the surface of the DRAM particle by laser; S500: reading the two-dimensional code on the surface of the DRAM particle by a code scanning device on a production line, checking and correcting the read data, automatically correcting and writing into a storage area when a single-bit error is detected, and prompting to rescan when a double-bit error is detected, until correct data is obtained and written into the storage area; S600: reading the repair data from the storage area when in use, checking and correcting the repair data, and performing block mapping according to the corrected repair data.

2. The method of claim 1, wherein the DRAM chip repair map is encoded in a two-dimensional code. The encoding rule comprises: a first byte is the total number of blocks; a second byte is the number of allowed damaged blocks; third to Nth bytes constitute a block state byte group, and each bit in the block state byte group corresponds to the state of a block; an (N+1)th byte is a check byte.

3. The method of claim 2, wherein the DRAM chip repair map is encoded in a two-dimensional code. Each bit in the block state byte group uses binary representation to represent the pass or failure state of the corresponding block.

4. The method of claim 1, wherein the DRAM chip repair map is encoded in a two-dimensional code. The extended Hamming code is a SECDED code.

5. The method of claim 2, wherein the DRAM chip repair map is encoded in a two-dimensional code. The step of calculating the check byte of the repair data by using the extended Hamming code comprises: performing extended Hamming code encoding operation on the first to Nth bytes to generate the check byte.

6. The method of claim 2, wherein the 2D code is encoded with a DRAM chip repair map, and The step of performing block mapping according to the corrected repair data comprises: analyzing the block state byte group in the corrected repair data to determine the state of each block; identifying the positions of failed blocks according to the block state; masking or redirecting the access to the failed blocks when accessing the addresses.

7. A DRAM die repair mapping two-dimensional code encoding system, characterized by, The method comprises the following steps: a rule definition module for determining the total number of blocks of a DRAM particle, the number of allowed damaged blocks, and setting an encoding rule containing block state information and check information; a defect detection module for testing the DRAM particle to be tested to identify the positions of damaged blocks; a data encoding module for generating repair data according to the encoding rule and the identified positions of damaged blocks, and calculating check bytes of the repair data by using an extended Hamming code; a laser marking module for converting the encoding information containing the repair data and the check bytes into a two-dimensional code, and printing the two-dimensional code on the surface of the DRAM particle by laser; a code scanning and writing module for reading the two-dimensional code on the surface of the DRAM particle by a code scanning device on a production line, checking and correcting the read data, automatically correcting and writing into a storage area when a single-bit error is detected, and prompting to rescan when a double-bit error is detected, until correct data is obtained and written into the storage area; a mapping repair module for reading the repair data from the storage area when in use, checking and correcting the repair data, and performing block mapping according to the corrected repair data.

8. A computer device comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, characterized in that, The processor implements the DRAM chip repair mapping two-dimensional code encoding method of any one of claims 1 to 6 when executing the computer program.

9. A readable storage medium, characterized by, The readable storage medium stores the computer program, and the computer program is executed by the processor to implement the DRAM chip repair mapping two-dimensional code encoding method of any one of claims 1 to 6.

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