Millimeter wave high-gain polarization reconfigurable meopole antenna

By integrating an extended semi-ellipsoidal lens and a pin diode switch control structure into a millimeter-wave antenna, dynamic switching of three polarization modes is achieved, solving the problems of insufficient gain and high-frequency loss in traditional millimeter-wave antennas, and improving the anti-interference capability and spectrum utilization of the communication system.

CN121460939BActive Publication Date: 2026-06-19ANHUI AGRICULTURAL UNIVERSITY

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
ANHUI AGRICULTURAL UNIVERSITY
Filing Date
2025-12-29
Publication Date
2026-06-19

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Abstract

This invention discloses a millimeter-wave high-gain polarization reconfigurable magnetoelectric dipole antenna, relating to the field of wireless communication technology. The antenna includes a semi-ellipsoidal lens, a rectangular patch, a Γ-shaped feed stub, a pin diode switch, a first metal substrate, a first dielectric substrate, a second metal substrate, a second dielectric substrate, a third dielectric substrate, a grounded coplanar waveguide feed port, and a microstrip line. The semi-ellipsoidal lens and the rectangular patch are fixed to the upper surface of the first dielectric substrate. One end of the grounded coplanar waveguide feed port is connected to the microstrip line, and the other end is connected to the third dielectric substrate, feeding the rectangular patch through the Γ-shaped feed stub. The pin diode switch is disposed on the upper surface of the first dielectric substrate, with one end connected to the Γ-shaped feed stub and the other end connected to the Γ-shaped branch line. The antenna proposed in this invention features efficient polarization switching, significant gain, and low transmission loss, effectively solving the technical bottlenecks of traditional millimeter-wave antennas.
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Description

Technical Field

[0001] This invention relates to the field of wireless communication technology, and in particular to a millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna. Background Technology

[0002] In recent years, the iterative upgrades of wireless communication technology have placed higher demands on the performance indicators of antenna systems. Traditional millimeter-wave antennas mostly adopt fixed polarization modes, and their parameter configurations cannot be dynamically adjusted according to application scenarios, resulting in poor environmental adaptability and limited performance potential. Magnetoelectric dipole antennas, with their outstanding characteristics such as wide bandwidth response, low backlobe radiation, and cross-polarization suppression, have become the preferred solution for modern communication systems. Against this backdrop, research on reconfigurable magnetoelectric dipole antennas for the millimeter-wave band has gradually become a hot topic.

[0003] Polarization is a core characteristic of antennas, directly determining the spatial propagation characteristics of electromagnetic waves. By dynamically adjusting the polarization mode, effective transmission and reception of multi-polarized signals can be achieved, significantly improving the anti-interference capability and spectrum utilization of communication systems. Polarization reconfiguration technology, through dynamically matching the signal polarization direction, can effectively solve the polarization mismatch problem and suppress multipath fading effects, thereby improving the stability of communication links. Current research focuses on achieving mode switching between linear polarization (horizontal / vertical) and circular polarization (left-handed / right-handed), but existing solutions are all based on microwave frequency band designs, making it difficult to directly adapt to the application requirements of millimeter-wave bands.

[0004] Currently, traditional low-frequency polarization reconfigurable solutions face significant technical challenges in the millimeter-wave band: schemes using PIN diode switches suffer from parasitic effects leading to a sharp increase in high-frequency losses, while complex reconfigurable feed networks result in excessive space occupation and reduced transmission efficiency. Furthermore, traditional antenna gain enhancement relies heavily on array structures, increasing design complexity and manufacturing costs, and potentially introducing mutual coupling interference. Dielectric lens gain enhancement technology, by controlling the electromagnetic wave propagation path and phase distribution, can optimize the antenna radiation pattern, achieving gain enhancement, sidelobe suppression, and improved cross-polarization ratio, providing an effective way to overcome these limitations. Therefore, designing a millimeter-wave magnetoelectric dipole antenna integrating a dielectric lens and possessing both high gain and polarization reconfigurability is crucial to meeting the application requirements of millimeter-wave communication systems, possessing significant technical value and broad application prospects. Summary of the Invention

[0005] The purpose of this invention is to propose a millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna. By constructing an antenna with an integrated extended semi-ellipsoidal lens and pin diode switching control structure on two dielectric substrates, the problem of fixed polarization mode, high high-frequency loss, and high cost due to complex array dependence for gain improvement in traditional millimeter-wave antennas is solved.

[0006] To achieve the above objectives, this invention proposes a millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna, comprising, from top to bottom, a semi-ellipsoidal lens, a rectangular patch, a Γ-shaped feed stub, a metal via, a first metal pillar, a second metal pillar, a third metal pillar, a pin diode switch, a first metal substrate, a first dielectric substrate, a second metal substrate, a second dielectric substrate, a third dielectric substrate, a grounded coplanar waveguide feed port, a microstrip line, and a branch bias line; the first metal substrate is disposed above the first dielectric substrate, the second metal substrate is disposed below the first dielectric substrate, the second dielectric substrate is disposed below the second metal substrate, and the third dielectric substrate is disposed below the second dielectric substrate; the semi-ellipsoidal lens is located on the upper surface of the first dielectric substrate. The rectangular patches are fixedly connected to the upper surface of the first dielectric substrate. Four rectangular patches are fixed to the upper surface of the first dielectric substrate, and the four rectangular patches are centrally symmetrically distributed about the long and short sides of the first dielectric substrate. One end of the grounded coplanar waveguide feed port is connected to the microstrip line, and the other end is connected to the third dielectric substrate, and the rectangular patches are fed through the Γ-shaped feed branch. A pin diode switch is disposed on the upper surface of the first dielectric substrate, one end of the pin diode switch is connected to the Γ-shaped feed branch, and the other end is connected to the Γ-shaped branch line. The first metal pillar, the second metal pillar, and the third metal pillar pass through the first dielectric substrate, the second metal substrate, and the second dielectric substrate sequentially from top to bottom. Preferably, the metal via passes through the first dielectric substrate from top to bottom, and the metal via and the rectangular patches together form a magnetoelectric dipole structure.

[0007] Preferably, the first dielectric substrate and the second dielectric substrate are made of the same material, but their height dimensions are different.

[0008] Preferably, the first metal column, the second metal column, and the third metal column are all the same size, and the diameter and height of the first metal column, the second metal column, and the third metal column are different from those of the metal through hole; the height of the first metal column, the second metal column, and the third metal column is greater than the height of the metal through hole, and the diameter is smaller than the diameter of the metal through hole.

[0009] Preferably, the antenna controls the Γ-shaped branch line and the Γ-shaped feed section through the pin diode switch to achieve switching between the three polarization states of the antenna:

[0010] When the pin diode switch S1 is turned on and S2 and S3 are turned off, the excitation generates a linearly polarized LP wave;

[0011] When the pin diode switch S2 is turned on and S1 and S3 are turned off, the excitation generates a right-hand circularly polarized RHCP wave;

[0012] When the pin diode switch S3 is turned on and S1 and S2 are turned off, the excitation generates a left-hand circularly polarized LHCP wave.

[0013] Preferably, the third metal pillar is disposed on one side of the microstrip line.

[0014] Preferably, the top layer transmission line of the grounded coplanar waveguide feed port adopts a ground-signal-ground GSG structure, the middle layer is a dielectric layer, the bottom layer is a ground layer, and the top and bottom layers are interconnected through electroplated through-holes (PTH).

[0015] Therefore, this invention proposes a millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna, which has the following advantages:

[0016] (1) The present invention controls the connection state of the Γ-shaped branch line and the Γ-shaped feed branch by using a pin diode switch, which can quickly realize the dynamic switching of three polarization modes: linear polarization, left-hand circular polarization, and right-hand circular polarization, effectively improving the anti-interference capability and spectrum utilization of the communication system and adapting to the requirements of complex channel environment.

[0017] (2) The present invention integrates an extended semi-ellipsoidal lens, which can improve antenna gain without relying on a complex array structure, while stabilizing the radiation pattern within the bandwidth, optimizing sidelobe suppression and cross-polarization ratio, solving the problem of insufficient gain of traditional millimeter-wave antennas, and avoiding the complexity and cost increase brought about by array structure.

[0018] (3) The present invention adopts a grounded coplanar waveguide transmission line structure, which has the characteristics of low loss and wide bandwidth, and is suitable for the signal transmission requirements of millimeter wave band. At the same time, the overall antenna is built on two layers of dielectric substrate, which has a compact structure and simple manufacturing process, effectively overcoming the bottleneck of high high-frequency loss and large space occupation of traditional low-frequency reconfigurable schemes in millimeter wave band, and has both low cost and high practicality.

[0019] The technical solution of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0020] Figure 1 This is an overall structural diagram of a millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna according to the present invention.

[0021] Figure 2 This is a top view schematic diagram of the structure of a millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna according to the present invention;

[0022] Figure 3 This is a side view schematic diagram of a millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna according to the present invention.

[0023] Figure 4This is a schematic diagram of the grounded coplanar waveguide feed port of a millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna according to the present invention;

[0024] Figure 5 This is a top-view diagram illustrating the dimensions of a millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna according to an embodiment of the present invention.

[0025] Figure 6 This is a schematic diagram showing the dimensions of a millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna in a side view according to an embodiment of the present invention;

[0026] Figure 7 This is a graph showing the reflection coefficient and gain results of a millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna in linear polarization and right-hand circular polarization states, according to an embodiment of the present invention.

[0027] Figure 8 This is a radiation pattern of the E-plane and H-plane of a millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna at 25 GHz, as shown in an embodiment of the present invention.

[0028] Figure 9 This is a radiation pattern of the E-plane and H-plane of a millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna at 25 GHz with left-hand circular polarization, as shown in an embodiment of the present invention.

[0029] Figure 10 The image shows the E-plane and H-plane radiation patterns of a millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna at 25 GHz with right-hand circular polarization, according to an embodiment of the present invention. Attached Figure Description

[0031] 1. Semi-ellipsoidal lens; 2. First metal substrate; 3. First dielectric substrate; 4. Second metal substrate; 5. Second dielectric substrate; 6. Third dielectric substrate; 7. First metal pillar; 8. Second metal pillar; 9. Third metal pillar; 10. Metal via; 201. Rectangular patch; 202. U-shaped feed branch; 203. Pin diode switch; 204. Grounded coplanar waveguide feed port; 205. Microstrip line; 206. Branch bias line; 207. U-shaped branch line. Detailed Implementation

[0032] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0033] In the description of this invention, it should be understood that the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.

[0034] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0035] In the embodiments of this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0036] Example

[0037] like Figures 1-4 As shown, the present invention provides a millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna, comprising, from top to bottom, a semi-ellipsoidal lens 1, a rectangular patch 201, a Γ-shaped feed stub 202, a metal through-hole 10, a first metal pillar 7, a second metal pillar 8, a third metal pillar 9, a pin diode switch 203, a first metal substrate 2, a first dielectric substrate 3, a second metal substrate 4, a second dielectric substrate 5, a third dielectric substrate 6, a grounded coplanar waveguide feed port 204, a microstrip line 205, and a branch bias line 206.

[0038] A first metal substrate 2 is disposed above the first dielectric substrate 3, a second metal substrate 4 is disposed below the first dielectric substrate 3, a second dielectric substrate 5 is disposed below the second metal substrate 4, and a third dielectric substrate 6 is disposed below the second dielectric substrate 5; the first dielectric substrate 3 and the second dielectric substrate 5 are made of the same material, but their height dimensions are different; a semi-ellipsoidal lens 1 is located on the upper surface of the first dielectric substrate 3 and is fixedly connected to the upper surface of the first dielectric substrate 3; the semi-ellipsoidal lens 1 has a special focusing capability, which can effectively focus the electromagnetic beam on the transmitting or receiving element, thereby increasing the antenna gain by 8-9 dB.

[0039] Four rectangular patches 201 are fixed to the upper surface of the first dielectric substrate 3, and the four rectangular patches are centrally symmetrical about the long and short sides of the first dielectric substrate 3. One end of the grounded coplanar waveguide feed port 204 is connected to the microstrip line 205, and the other end is connected to the third dielectric substrate 6, and the rectangular patches 201 are fed through the U-shaped feed stub 202. The top layer transmission line of the grounded coplanar waveguide feed port 204 adopts a ground-signal-ground (GSG) structure, the middle layer is a dielectric layer, and the bottom layer is a ground layer. The top and bottom layers are interconnected through electroplated vias PTH. The third metal post 9 on one side of the microstrip line 205 is used to adjust the impedance matching of the antenna.

[0040] A pin diode switch 203 is disposed on the upper surface of the first dielectric substrate 3. One end of the pin diode switch 203 is connected to the Γ-shaped feed stub 202, and the other end is connected to the Γ-shaped branch line 207. The pin diode switch 203 controls the Γ-shaped feed stub 202 and the Γ-shaped branch line 207 to switch between the three polarization states of the antenna.

[0041] When pin diode switch 203 S1 is turned on and S2 and S3 are turned off, the excitation generates a linearly polarized LP wave.

[0042] When pin diode switch 203 S2 is turned on and S1 and S3 are turned off, the excitation generates a right-hand circularly polarized RHCP wave.

[0043] When pin diode switch 203 is turned on (S3) and S1 and S2 are turned off, a left-hand circularly polarized LHCP wave is generated.

[0044] The first metal pillar 7, the second metal pillar 8, and the third metal pillar 9 pass through the first dielectric substrate 3, the second metal substrate 4, and the second dielectric substrate 5 sequentially from top to bottom. The first metal pillar 7, the second metal pillar 8, and the third metal pillar 9 are all identical in size, but their diameters and heights differ from those of the metal through-hole 10. The height of the first metal pillar 7, the second metal pillar 8, and the third metal pillar 9 is greater than the height of the metal through-hole 10, and their diameters are smaller than the diameter of the metal through-hole 10. The metal through-hole 10 passes through the first dielectric substrate 3 from top to bottom, and the metal through-hole 10 and the rectangular patch 201 together form a magnetoelectric dipole structure.

[0045] The following section provides further explanation of this application in conjunction with specific experiments.

[0046] like Figures 5-6 As shown, taking a millimeter-wave polarized reconfigurable magnetoelectric dipole antenna with a center frequency of 25 GHz as an example, the optimized dimensions are as follows: the thickness of the extended semi-ellipsoidal lens is H1=23 mm; the thickness of the first dielectric substrate 3 is H2=1.575 mm, and its dielectric constant is 2.20; the thickness of the second dielectric substrate 5 is H3=0.254 mm, and its dielectric constant is 2.20; the length and width of the second metal substrate 4 are La=29 mm and Lb=25 mm, respectively; the diameter of the first metal pillar 7, the second metal pillar 8, and the third metal pillar 9 is R1=0.15 mm, and the height is H4=1.929 mm; the diameter of the metal through-hole 10 is R2=0.2 mm, and the height is H5=1.575 mm; the length and width of the rectangular patch 201 are both Ld=6.2 mm; the length of the pin diode switch 203 is 0.35 mm, and the width is 0.075 mm.

[0047] like Figure 7 As shown, due to the symmetry of the antenna structure, the left-hand and right-hand circular polarization states exhibit the same simulation results. The results in the figure show that the simulated -10dB impedance bandwidth of this antenna is 7.8GHz, ranging from 22-29.8GHz. Within the operating frequency band, the simulated gain for all three polarization states is greater than 16.8dBi. Compared to an antenna without a lens, this antenna shows an 8-9dB gain improvement, demonstrating the advantage of high gain.

[0048] like Figures 8-10 The figure shows the E-plane and H-plane radiation patterns of the millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna in three polarization states at 25 GHz according to an embodiment of the present invention. It can be seen from the figure that the millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna proposed in this application has good radiation characteristics.

[0049] As demonstrated by the experiments above, the millimeter-wave high-gain polarization-reconfigurable magnetoelectric dipole antenna proposed in this invention utilizes pin diodes to control the connection or disconnection of the Γ-shaped branch line to the Γ-shaped feed section to achieve polarization reconfiguration, enabling switching between three polarization states. To improve the gain performance of the polarization-reconfigurable magnetoelectric dipole antenna element, an extended semi-ellipsoidal lens is added to the antenna. The introduction of the dielectric lens can regulate the antenna's radiation characteristics by altering the propagation path and phase distribution of electromagnetic waves. Specifically, the addition of the dielectric lens can optimize the antenna's radiation pattern, increase antenna gain, reduce sidelobe levels, and suppress cross-polarization, thereby improving the overall performance of the antenna. The lens introduced in this invention increases the antenna gain by approximately 8-9 dB. The gain-enhanced polarization-reconfigurable antenna possesses advantages such as high gain, low cost, and stable radiation pattern, making it an ideal choice for low-cost millimeter-wave applications in fifth-generation (5G) communication technology, suitable for various wireless systems such as satellite communication and mobile communication.

[0050] It is worth noting that all contents not described in detail in this invention are existing technologies and are well known to those skilled in the art.

[0051] Therefore, this invention provides a millimeter-wave high-gain polarization reconfigurable magnetoelectric dipole antenna, which achieves flexible switching between three polarization modes through pin diode switching and improves the gain by 8-9 dB with the help of an extended semi-ellipsoidal lens. At the same time, it adopts a grounded coplanar waveguide (GCPW) structure and is built on a two-layer dielectric substrate, which has the advantages of high polarization switching efficiency, significant gain, low transmission loss, compact structure and low cost, effectively solving the technical bottlenecks of traditional millimeter-wave antennas.

[0052] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention and not to limit them. Although the present invention has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can still be made to the technical solutions of the present invention, and these modifications or equivalent substitutions cannot cause the modified technical solutions to deviate from the spirit and scope of the technical solutions of the present invention.

Claims

1. A millimeter-wave high-gain polarization reconfigurable magnetoelectric dipole antenna, characterized in that, It includes a semi-ellipsoidal lens extending from top to bottom, a rectangular patch, a Γ-shaped feed stub, a metal via, a first metal pillar, a second metal pillar, a third metal pillar, a pin diode switch, a first metal substrate, a first dielectric substrate, a second metal substrate, a second dielectric substrate, a third dielectric substrate, a grounded coplanar waveguide feed port, a microstrip line, and a DC bias line. A first metal substrate is disposed above the first dielectric substrate, a second metal substrate is disposed below the first dielectric substrate, and a second dielectric substrate is disposed below the second metal substrate. A third dielectric substrate is disposed below the second dielectric substrate. A semi-ellipsoidal lens is located on the upper surface of the first dielectric substrate and is fixedly connected to the upper surface of the first dielectric substrate. Four rectangular patches are fixed to the upper surface of the first dielectric substrate, and the four rectangular patches are centrally symmetrically distributed about the long and short sides of the first dielectric substrate. A metal via extends vertically from the upper surface of the first dielectric substrate to the lower surface and is located below the rectangular patches, forming a magnetoelectric dipole structure together with the rectangular patches. One end of the grounded coplanar waveguide feed port is connected to the microstrip line. The other end is connected to the third dielectric substrate and feeds the rectangular patch through the Γ-shaped feed branch; there are three pin diode switches, which are disposed on the upper surface of the first dielectric substrate and are named S1, S2 and S3 respectively. One end of the pin diode switch is connected to the Γ-shaped feed branch and the other end is connected to the Γ-shaped branch line; there are three Γ-shaped branch lines, which are disposed on the upper surface of the first dielectric substrate and the other end of the Γ-shaped branch lines is connected to the second metal pillar; the DC bias line is disposed on the lower surface of the second dielectric substrate and is connected to the Γ-shaped branch line through the second metal pillar; the first metal pillar, the second metal pillar and the third metal pillar pass through the first dielectric substrate, the second metal substrate and the second dielectric substrate from top to bottom.

2. The millimeter-wave high-gain polarization reconfigurable meopolarimetric dipole antenna according to claim 1, wherein, The metal via extends from top to bottom through the first dielectric substrate, and the metal via and the rectangular patch together form a magnetoelectric dipole structure. 3.The millimeter-wave high-gain polarization reconfigurable meopolarimetric dipole antenna according to claim 1, wherein, The first dielectric substrate and the second dielectric substrate are made of the same material, but their height dimensions are different.

4. The millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna according to claim 1, characterized in that, The first metal column, the second metal column, and the third metal column are all the same size, and their diameter and height are different from those of the metal through hole; the height of the first metal column is greater than the height of the metal through hole, and its diameter is smaller than the diameter of the metal through hole.

5. A millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna according to claim 1, characterized in that, The antenna controls the Γ-shaped branch line and the Γ-shaped feed section through the pin diode switch, realizing the switching of the antenna's three polarization states: When the pin diode switch S1 is turned on and S2 and S3 are turned off, the excitation generates a linearly polarized LP wave; When the pin diode switch S2 is turned on and S1 and S3 are turned off, the excitation generates a right-hand circularly polarized RHCP wave; When the pin diode switch S3 is turned on and S1 and S2 are turned off, the excitation generates a left-hand circularly polarized LHCP wave.

6. A millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna according to claim 1, characterized in that, The third metal pillar is disposed on one side of the microstrip line.

7. A millimeter-wave high-gain polarized reconfigurable magnetoelectric dipole antenna according to claim 1, characterized in that, The top layer transmission line of the grounded coplanar waveguide feed port adopts a ground-signal-ground GSG structure, with a dielectric layer in the middle and a ground layer at the bottom. The top and bottom layers are interconnected through electroplated through-holes (PTH).