Light-emitting element transfer apparatus and method of transferring light-emitting element

Abstract

The invention relates to a light-emitting element transfer apparatus and a method of transferring a light-emitting element. The light-emitting element transfer apparatus includes: a first transfer head; the second transfer head is arranged below the first transfer head; the stamp is arranged below the second transfer head; a tilt adjustment member that adjusts the tilt of the second transfer head; and a buffer member disposed below the second transfer head to be adjacent to the stamp and protruding in a downward direction to be lower than the stamp, in which the buffer member includes an elastic material, and in which a thickness of the buffer member is greater than a sum of a thickness of the stamp and a thickness of the light emitting element.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to and all benefits derived therefrom of Korean Patent Application No. 10-2024-0102855, filed on August 2, 2024, the contents of which are incorporated herein by reference in their entirety. Technical Field

[0003] Embodiments of this disclosure relate to a transfer apparatus for a light-emitting element and a method for transferring a light-emitting element using the transfer apparatus. Background Technology

[0004] With the development of multimedia, the importance of display devices is increasing. As a result, various types of display devices, such as organic light-emitting diode (OLED) displays and liquid crystal display (LCD) displays, are widely used in various fields.

[0005] Display panels, such as light-emitting display panels or liquid crystal display panels, are typically included in electronic devices or display equipment that display images. Among various types of display panels, light-emitting display panels can include light-emitting diodes (LEDs), and organic LEDs using organic materials as fluorescent materials or inorganic LEDs using inorganic materials as fluorescent materials can be used as LEDs. Summary of the Invention

[0006] When manufacturing display panels that use inorganic light-emitting diodes (LEDs) as LEDs, manufacturing equipment for arranging micro-LEDs on the substrate of the display panel can be used.

[0007] The embodiments and features of this disclosure provide a light-emitting element transfer device capable of effectively transferring light-emitting elements and a transfer method using the light-emitting element transfer device.

[0008] According to an embodiment, the light-emitting element transfer device includes: a first transfer head; a second transfer head disposed below the first transfer head; a stamp disposed below the second transfer head; a tilt adjustment member for adjusting the tilt of the second transfer head; and a buffer member disposed below the second transfer head adjacent to the stamp and protruding in a downward direction below the stamp, wherein the buffer member comprises an elastic material and the thickness of the buffer member is greater than the sum of the thickness of the stamp and the thickness of the light-emitting element.

[0009] In an embodiment, the light-emitting element transfer device may further include: a gas flow path disposed in the second transfer head to supply gas to the buffer member; and a gas supply member that supplies gas to the buffer member through the gas flow path.

[0010] In one embodiment, the first transfer head may define a cavity having an opening in the downward direction, and the width of the opening may be less than the width of the cavity.

[0011] In one embodiment, the second transfer head can be divided into a first part disposed in the cavity, a third part disposed outside the first transfer head, and a second part disposed between the first part and the third part, and the width of the second part can be narrower than the width of the first part and the width of the third part.

[0012] In an embodiment, the tilt adjustment member may include a first permanent magnet disposed on the first transfer head and a second permanent magnet disposed on the first part of the second transfer head, facing the first permanent magnet and having a repulsive force with the first permanent magnet.

[0013] In one embodiment, the second transfer head may include a chuck on one side and absorb the stamp through the chuck.

[0014] In one embodiment, the second transfer head may be divided into a first part disposed in the cavity, a third part disposed outside the first transfer head, a second part disposed between the first part and the third part, and an inclined part disposed between the first part and the second part, and the width of the second part may be narrower than the width of the first part and the width of the third part.

[0015] In an embodiment, the tilt adjustment member may include a plurality of second permanent magnets disposed on the first part and the tilted part, and a plurality of first permanent magnets disposed on the first transfer head corresponding to the plurality of second permanent magnets.

[0016] In one embodiment, the light-emitting element transfer device may further include a pressure member disposed within the cavity of the first transfer head between the first transfer head and the second transfer head, wherein the pressure member can press the second transfer head in a downward direction.

[0017] In some embodiments, the pressure component may include a spring.

[0018] In one embodiment, the pressure member may include: an elastic membrane disposed within the cavity of the first transfer head on the second transfer head; a gas conduit for supplying gas to the space between the elastic membrane and the first transfer head; and a gas supply member for supplying gas to the gas conduit.

[0019] In this implementation, the first transfer head, the second transfer head, and the tilt adjustment member can collectively define the air gyroscope.

[0020] In this implementation, the buffer members may be discontinuously arranged around the stamp in the plan view.

[0021] In this implementation, the buffer member can be continuously arranged around the stamp.

[0022] In some implementations, the buffer member may include a diaphragm.

[0023] In one embodiment, the second transfer head may include a chuck disposed at its lower portion, and the stamp is adsorbed through the chuck.

[0024] According to an embodiment, the method for transferring a light-emitting element includes: disposing a transfer device including a buffer member and a stamp on a substrate; lowering the transfer device to contact the lower surface of the buffer member with the substrate, wherein the thickness of the buffer member is thicker than the sum of the thickness of the stamp and the thickness of the light-emitting element; adjusting the flatness of the transfer device to the flatness of the substrate; and pressing the buffer member to contact the substrate and transfer the light-emitting element onto the substrate, wherein the buffer member is made of an elastic material and its thickness decreases when the buffer member is pressed.

[0025] In one embodiment, placing the transfer device on the substrate may include aligning the light-emitting element disposed on the stamp with the substrate based on a first alignment mark disposed on one side of the stamp and a second alignment mark disposed on the substrate.

[0026] In an embodiment, the transfer device may include a first transfer head, a second transfer head disposed below the first transfer head, and a tilt adjustment member for adjusting the tilt of the second transfer head. Adjusting the flatness of the transfer device to match the flatness of the substrate may be achieved by adjusting the flatness of the second transfer head through the tilt adjustment member while the second transfer head is not in contact with the first transfer head.

[0027] In one embodiment, the transfer device may include a gas supply member for supplying gas to the buffer member and a gas flow path connecting the gas supply member and the buffer member, and the method may further include supplying gas to the buffer member before lowering the transfer device to bring the lower surface of the buffer member into contact with the substrate.

[0028] According to an embodiment of the method for manufacturing a display panel, high-precision alignment can be performed by ensuring the relative flatness of the substrate when the light-emitting element is not in contact with the substrate. Therefore, for example, when transferring the light-emitting element onto a large-size substrate, the product quality of the display panel can be improved and the production volume can be increased by reducing defects in the light-emitting element.

[0029] However, the effects of the embodiments of this disclosure are not limited to the effects described above, and various other effects are included in this specification. Attached Figure Description

[0030] The above and other features of the embodiments of this disclosure will become more apparent from the detailed description of the embodiments with reference to the accompanying drawings.

[0031] Figure 1This is a plan view showing a display device according to an embodiment.

[0032] Figure 2 It is shown Figure 1 A planar diagram of example pixels.

[0033] Figure 3 It is shown Figure 1 Another example of a planar view of pixels.

[0034] Figure 4 It shows along Figure 2 A cross-sectional view of an example display panel, taken by line A-A'.

[0035] Figure 5 This is a schematic diagram illustrating a light-emitting element transfer device according to an embodiment.

[0036] Figure 6 This is a schematic diagram illustrating a transfer device according to an embodiment.

[0037] Figures 7 to 10 It is a plan view showing the number and shape of the buffer components.

[0038] Figure 11 This diagram illustrates the operation of a light-emitting element transfer device without tilt adjustment components and buffer components.

[0039] Figure 12 This is a schematic diagram illustrating a transfer device according to another embodiment.

[0040] Figure 13 This is a schematic diagram illustrating a transfer device according to another embodiment.

[0041] Figure 14 This is a schematic diagram illustrating a transfer device according to another embodiment.

[0042] Figure 15 This is a schematic diagram illustrating a transfer device according to another embodiment.

[0043] Figure 16 This is a schematic diagram illustrating a transfer device according to another embodiment.

[0044] Figure 17 This is a schematic diagram illustrating a transfer device according to another embodiment.

[0045] Figure 18 This is a flowchart illustrating a light-emitting element transfer method according to an embodiment.

[0046] Figures 19 to 23 This is a cross-sectional view illustrating an embodiment of the light-emitting element transfer method.

[0047] Figure 24 This is a block diagram of an electronic device according to one embodiment of the present disclosure.

[0048] Figure 25 This is a schematic diagram of an electronic device according to various embodiments of the present disclosure. Detailed Implementation

[0049] The invention will now be described more fully below with reference to the accompanying drawings, in which various embodiments are illustrated. However, the invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. The same reference numerals throughout denote the same elements.

[0050] In order to describe embodiments of this disclosure, some parts that are not related to the description may be omitted.

[0051] It will also be understood that when a layer is referred to as being "on" another layer or substrate, it can be directly on the other layer or substrate, or an intermediary layer may be present. Conversely, when an element is referred to as being "directly" on another element, an intermediary element may not be present.

[0052] Furthermore, the phrase "in a plan view" means when viewing a portion of the object from above, and the phrase "in a schematic sectional view" means when viewing a schematic section taken by vertically cutting the portion of the object from the side. The terms "overlap" or "overlapped" mean that the first object may be above or below the second object, or to one side of the second object, and vice versa. Additionally, the term "overlap" can include layer, stack, face or facing, extend over, cover or partially cover, or any other suitable term as will be understood and appreciated by one of ordinary skill in the art. The expression "not overlap" can include meanings such as "spaced apart" or "separated" or "offset," and any other suitable equivalent as will be understood and appreciated by one of ordinary skill in the art. The terms "face" and "facing" can mean that the first object may be directly opposite or indirectly opposite the second object. In the case of a third object inserted between the first and second objects, the first and second objects can be understood as indirectly opposite each other, although still facing each other.

[0053] For ease of description, spatial relative terms such as “below,” “under,” “down,” “above,” “up,” etc., may be used herein to describe the relationship between one element or component and another element or component as shown in the figures. It will be understood that, in addition to the orientation depicted in the figures, spatial relative terms are intended to encompass different orientations of the device in use or operation. For example, in the case where the device shown in the figures is flipped, a device located “below” or “under” another device may be placed “above” another device. Therefore, the descriptive term “below” can include both a lower position and an upper position. The device may also be oriented in other directions, and thus the spatial relative terms may be interpreted differently depending on the orientation.

[0054] When an element is referred to as being “connected” or “coupled” to another element, the element may be “directly connected” or “directly coupled” to the other element or “electrically connected” or “electrically coupled” to the other element, with one or more intermediary elements inserted between them. It will be further understood that when the terms “comprises,” “comprising,” “has,” “have,” “having,” “includes,” and / or “including” are used, they may specify the presence of the stated feature, integral, step, operation, element, and / or component, but do not exclude the presence or addition of other features, integrals, steps, operations, elements, components, and / or any combination thereof.

[0055] It will be understood that although the terms “first,” “second,” “third,” etc., may be used herein to describe various elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another, or for the convenience of describing and explaining the elements. For example, when “first element” is discussed in the specification, it may be referred to as “second element” or “third element,” and “second element” and “third element” may be named in a similar manner without departing from the teachings herein.

[0056] Given the measurements discussed and the errors associated with the measurement of a particular quantity (e.g., limitations of the measurement system), the terms “about” or “approximately” as used herein include the value and mean within an acceptable deviation of the particular value as determined by one of ordinary skill in the art. For example, “about” may mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the value.

[0057] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, “a,” “an,” “the,” and “at least one” do not indicate a limitation of quantity and are intended to include both singular and plural forms unless the context clearly indicates otherwise. Thus, reference to “the” element following “a” element in a claim includes one element and multiple elements. For example, “a element” has the same meaning as “at least one element” unless the context clearly indicates otherwise. “At least one” should not be construed as limiting “a” or “an.” “Or” means “and / or.” As used herein, for the purposes of its meaning and interpretation, the term “and / or” is intended to include any combination of the terms “and” and “or.” For example, “A and / or B” can be understood to mean “A, B, or A and B.” The terms “and” and “or” can be used in a combined or separate sense and can be understood as equivalent to “and / or.” In the specification and claims, for the purposes of its meaning and interpretation, the phrase “at least one of…” is intended to include the meaning of “at least one selected from…”. For example, "at least one of A and B" can be understood as "A, B or A and B".

[0058] Unless otherwise defined or implied, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. It will also be understood that terms (such as those defined in common dictionaries) shall be interpreted as having a meaning consistent with their meaning in the context of the relevant field, and shall not be interpreted in an idealized or overly formalized sense unless expressly defined in the specification.

[0059] Embodiments are described herein with reference to cross-sectional views as schematic representations of idealized embodiments. Thus, variations in the illustrated shapes should be anticipated, for example, due to manufacturing techniques and / or tolerances. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions shown herein, but should include, for example, deviations in shape due to manufacturing processes. For instance, regions shown or described as flat may generally have rough and / or non-linear characteristics. Furthermore, sharp corners shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to represent the precise shapes of the regions, nor are they intended to limit the scope of the claims.

[0060] In the following, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings.

[0061] Figure 1 This is a plan view showing a display device according to an embodiment. Figure 2 It is shown Figure 1 A planar diagram of example pixels. Figure 3 It is shown Figure 1 Another example of a planar view of pixels.

[0062] refer to Figures 1 to 3 The implementation of the display device 10 can be a device for displaying video or still images, such as portable electronic devices (such as mobile phones, smartphones, tablet PCs, smartwatches, watch phones, mobile communication terminals, e-notebooks, e-books, portable multimedia players (PMPs), navigation systems, and ultra-mobile PCs (UMPCs)), as well as displays that can be used as screens for various products (such as televisions, laptops, monitors, billboards, and Internet of Things (IoT) devices).

[0063] The display device 10 may include a display panel 100. The display panel 100 may be formed in a rectangular planar shape, having a long side in a first direction DR1 and a short side in a second direction DR2 intersecting the first direction DR1. The corner where the long side in the first direction DR1 intersects the short side in the second direction DR2 may be rounded with a predetermined curvature or formed as a right angle. The planar shape of the display panel 100 is not limited to a rectangle and may be formed in other polygonal, circular, or elliptical shapes. The display panel 100 may be formed flat, but is not limited thereto. In embodiments, for example, the display panel 100 may be formed curved at the left and right ends and may include curved portions with constant or varying curvature. In embodiments, the display panel 100 may be formed flexible, enabling it to be bent, curved, folded, or rolled.

[0064] The display panel 100 may further include pixels PX for displaying images, scan lines extending in a first direction DR1, and data lines extending in a second direction DR2. The pixels PX may be arranged in a matrix configuration on the first direction DR1 and the second direction DR2. In an embodiment, the third direction DR3 may be the thickness direction of the display device 10.

[0065] like Figure 2 and Figure 3 As shown, each of pixels PX can include multiple subpixels RP, GP, and BP. In an implementation, as... Figure 2 and Figure 3 As shown, each of the pixels PX includes three sub-pixels RP, GP, and BP (i.e., the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP), but the embodiments of this disclosure are not limited thereto.

[0066] Each of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can be connected to one of the data lines and at least one of the scan lines.

[0067] Each of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can have a rectangular, square, or rhomboid planar shape. In an implementation, for example, as shown... Figure 2 As shown, each of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can have a rectangular planar shape, the rectangle having a short side in the first direction DR1 and a long side in the second direction DR2. Alternatively, as... Figure 3 As shown, each of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can have a square or rhomboid planar shape, which includes sides of equal length in the first direction DR1 and the second direction DR2.

[0068] In the implementation method, such as Figure 2 As shown, the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can be disposed on the first direction DR1. Alternatively, one of the second sub-pixel GP and the third sub-pixel BP and the first sub-pixel RP can be disposed on the first direction DR1, and the other of the second sub-pixel GP and the first sub-pixel RP can be disposed on the second direction DR2. In another embodiment, for example, as shown... Figure 3 As shown, the first sub-pixel RP and the second sub-pixel GP can be set on the first direction DR1, and the first sub-pixel RP and the third sub-pixel BP can be set on the second direction DR2.

[0069] Alternatively, one of the first sub-pixel RP and the third sub-pixel BP, and the second sub-pixel GP, can be located on the first direction DR1, and the other of the second sub-pixel GP can be located on the second direction DR2. Alternatively, one of the first sub-pixel RP and the second sub-pixel GP, and the third sub-pixel BP, can be located on the first direction DR1, and the remaining one of the second sub-pixel RP and the third sub-pixel BP can be located on the second direction DR2.

[0070] The first sub-pixel RP may include a first light-emitting element that emits a first light, the second sub-pixel GP may include a second light-emitting element that emits a second light, and the third sub-pixel BP may include a third light-emitting element that emits a third light. Here, the first light may be light in the red wavelength band, the second light may be light in the green wavelength band, and the third light may be light in the blue wavelength band. The red wavelength band may be a wavelength band of about 600 nanometers (nm) to 750 nm, the green wavelength band may be a wavelength band of about 480 nm to 560 nm, and the blue wavelength band may be a wavelength band of about 370 nm to 460 nm, but the embodiments of this disclosure are not limited thereto.

[0071] Each of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP may include an inorganic light-emitting element having an inorganic semiconductor as the light-emitting element. In an embodiment, for example, the inorganic light-emitting element may be a flip-chip micro-light-emitting diode (LED), but the embodiments of this disclosure are not limited thereto.

[0072] In the implementation method, such as Figure 2 and Figure 3 As shown, the areas of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can be substantially the same as each other, but the embodiments of this disclosure are not limited thereto. At least one of the areas of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can be different from the other one. Alternatively, any two of the areas of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can be substantially the same as each other, and the remaining one can be different from the other two. Alternatively, the areas of the first sub-pixel RP, the second sub-pixel GP, and the third sub-pixel BP can be different from each other.

[0073] Figure 4 It shows along Figure 2 A cross-sectional view of an example display panel, taken by line A-A'.

[0074] refer to Figure 4 The display panel 100 may include a thin-film transistor layer (TFTL) and a light-emitting element (LE) disposed on a substrate SUB. The TFTL may be a layer in which thin-film transistors (TFTs) are disposed.

[0075] The thin-film transistor layer (TFTL) may include an active layer (ACT), a first gate layer (GTL1), a second gate layer (GTL2), a first data metal layer (DTL1), a second data metal layer (DTL2), a third data metal layer (DTL3), and a fourth data metal layer (DTL4). Furthermore, the TFTL includes a buffer film (BF), a gate insulating film (130), a first interlayer insulating film (141), a second interlayer insulating film (142), a first planarization film (160), a first insulating film (161), a second planarization film (180), a second insulating film (181), and a third planarization film (190).

[0076] The substrate SUB can be a base substrate or base component used to support a display device. The substrate SUB can be a rigid substrate comprising or made of glass, but embodiments of this disclosure are not limited thereto. The substrate SUB can be a flexible substrate capable of being bent, folded, rolled, etc. In this case, the substrate SUB can include an insulating material such as a polymer resin (e.g., polyimide (PI)).

[0077] A buffer film (BF) can be disposed on one surface of the substrate (SUB). The buffer film (BF) can be a membrane used to prevent the penetration of air or moisture. The buffer film (BF) can be defined by or formed from a plurality of alternately stacked inorganic films. In one embodiment, for example, the buffer film (BF) can be formed as a multilayer comprising one or more of the following: silicon nitride layer, silicon oxynitride layer, silicon oxide layer, titanium oxide layer, and aluminum oxide layer. In another embodiment, the buffer film (BF) can be omitted.

[0078] The active layer ACT can be disposed on the buffer film BF. The active layer ACT may include silicon semiconductors, such as polycrystalline silicon, monocrystalline silicon, low-temperature polycrystalline silicon, and amorphous silicon, or may include oxide semiconductors.

[0079] The active layer ACT may include a channel TCH of a thin-film transistor (TFT), a first electrode TS, and a second electrode TD. The channel TCH of the TFT may be a region on a third-direction DR3, which is the thickness direction of the substrate SUB, that overlaps with the gate electrode TG of the TFT. The first electrode TS of the TFT may be disposed on one side of the channel TCH, and the second electrode TD may be disposed on the other side of the channel TCH. The first electrode TS and the second electrode TD of the TFT may be regions on the third-direction DR3 that do not overlap with the gate electrode TG. The first electrode TS and the second electrode TD of the TFT may be regions in which ions are doped in silicon semiconductor or oxide semiconductor to achieve conductivity.

[0080] The gate insulating film 130 may be disposed on the active layer ACT. The gate insulating film 130 may include or be formed of an inorganic film, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0081] The first gate layer GTL1 may be disposed on the gate insulating film 130. The first gate layer GTL1 may include the gate electrode TG of the thin-film transistor TFT and the first capacitor electrode CAE1 of the storage capacitor Cst. The first gate layer GTL1 may be formed as a single layer or multiple layers, wherein each layer includes at least one selected from molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or an alloy thereof.

[0082] The first interlayer insulating film 141 may be disposed on the first gate layer GTL1. The first interlayer insulating film 141 may include or be formed of an inorganic film, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0083] The second gate layer GTL2 may be disposed on the first interlayer insulating film 141. The second gate layer GTL2 may include a second capacitor electrode CAE2. The second gate layer GTL2 may be formed as a single layer or multiple layers, wherein each layer includes at least one selected from molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or an alloy thereof.

[0084] The second interlayer insulating film 142 may be disposed on the second gate layer GTL2. The second interlayer insulating film 142 may include or be formed of an inorganic film, such as a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer.

[0085] A first data metal layer DTL1, including a first connecting electrode CE1, a first sub-pad, and a data line, can be disposed on the second interlayer insulating film 142. The data line can be integrally formed with the first sub-pad, but embodiments of this disclosure are not limited thereto. The first data metal layer DTL1 can be formed as a single layer or multiple layers, wherein each layer includes at least one selected from molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0086] The first connection electrode CE1 can be connected to the first electrode TS or the second electrode TD of the thin-film transistor TFT through a first contact hole CT1 defined or formed in the gate insulating film 130, the first interlayer insulating film 141 and the second interlayer insulating film 142.

[0087] A first planarization film 160 may be disposed on the first data metal layer DTL1 to planarize the steps (or step structures) caused by the active layer ACT, the first gate layer GTL1, the second gate layer GTL2, and the first data metal layer DTL1. The first planarization film 160 may include or be formed of an organic film, such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc. A first insulating film 161 may be disposed on the first planarization film 160.

[0088] A second data metal layer DTL2 may be disposed on the first insulating film 161. The second data metal layer DTL2 may include a second connection electrode CE2 and a second sub-pad. The second connection electrode CE2 may be connected to the first connection electrode CE1 through a second contact hole CT2 defined or formed in the first insulating film 161 and the first planarization film 160. The second data metal layer DTL2 may be formed as a single layer or multiple layers, wherein each layer includes at least one selected from molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0089] The second planarization film 180 can be disposed on the second data metal layer DTL2. The second planarization film 180 can be formed of an organic film, such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc. The second insulating film 181 can be disposed on the second planarization film 180.

[0090] A third data metal layer DTL3 may be disposed on the second insulating film 181. The third data metal layer DTL3 may include a third connection electrode CE3 and a third sub-pad. The third connection electrode CE3 may be connected to the second connection electrode CE2 through a third contact hole CT3 passing through the second insulating film 181 and the second planarization film 180. The third data metal layer DTL3 may be formed as a single layer or multiple layers, wherein each layer includes at least one selected from molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0091] The third planarization film 190 may be disposed on the third data metal layer DTL3. The third planarization film 190 may include or be formed of an organic film, such as acrylic resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, etc.

[0092] A fourth data metal layer DTL4 may be disposed on the third planarization film 190. The fourth data metal layer DTL4 may include an anode pad electrode APD, a cathode pad electrode CPD, and a fourth sub-pad. The anode pad electrode APD may be connected to the third connection electrode CE3 through a fourth contact hole CT4 defined or formed in the third planarization film 190. The cathode pad electrode CPD may be provided with a first power supply voltage as a low potential voltage. The fourth data metal layer DTL4 may be formed as a single layer or multiple layers, wherein each layer includes at least one selected from molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof.

[0093] The light-emitting element LE is exemplified as a flip-chip microLED, wherein the first contact electrode CTE1 and the second contact electrode CTE2 are arranged facing the anode pad electrode APD and the cathode pad electrode CPD, but are not limited thereto. The light-emitting element LE can be an inorganic light-emitting element comprising an inorganic material such as GaN or made of an inorganic material such as GaN. The light-emitting element LE can have lengths in a first direction DR1, a second direction DR2, and a third direction DR3, respectively, ranging from a few micrometers to several hundred micrometers (μm). In embodiments, for example, the light-emitting element LE can have lengths in the first direction DR1, the second direction DR2, and the third direction DR3, respectively, of approximately 100 μm or less.

[0094] In this embodiment, light-emitting elements (LEs) can be grown and formed on a semiconductor substrate such as a silicon wafer. Each of the light-emitting elements (LEs) can be directly transferred from the silicon wafer to the anode pad electrode (APD) and cathode pad electrode (CPD) of the substrate SUB. In such an embodiment, the first contact electrode (CTE1) and the anode pad electrode (APD) can be bonded to each other via a bonding process. Furthermore, the second contact electrode (CTE2) and the cathode pad electrode (CPD) can be bonded to each other via a bonding process. The first contact electrode (CTE1) and the anode pad electrode (APD) can be electrically connected to each other via a bonding electrode (23). Furthermore, the second contact electrode (CTE2) and the cathode pad electrode (CPD) can be electrically connected to each other via the bonding electrode (23).

[0095] In an embodiment, for example, the bonding electrode 23 may be disposed on one side of the light-emitting element LE. The bonding electrode 23 may be a bonding product using laser for pressure fusion bonding. Here, pressure fusion bonding refers to a state in which the bonding electrode 23 is heated and melted, and the light-emitting element LE, the anode pad electrode APD, and the cathode pad electrode CPD melt and mix, and then cool and solidify when the laser supply is terminated. Since the conductivity of the light-emitting element LE, the anode pad electrode APD, and the cathode pad electrode CPD is maintained while being cooled and solidified into a molten and mixed state, the anode pad electrode APD, the cathode pad electrode CPD, and the light-emitting element LE can be electrically and physically connected to each other, respectively. Therefore, the bonding electrode 23 may be disposed on the first contact electrode CTE1 and the second contact electrode CTE2 of the light-emitting element LE.

[0096] The bonding electrode 23 may include, for example, Au, AuSn, PdIn, InSn, NiSn, Au-Au, AgIn, AgSn, Al, Ag, or carbon nanotubes. Each of these materials may be used alone or in combination of two or more.

[0097] Each of the light-emitting elements (LEs) can be a light-emitting structure comprising a base substrate SPUB, an n-type semiconductor NSEM, an active layer MQW, a p-type semiconductor PSEM, a first contact electrode CTE1, and a second contact electrode CTE2.

[0098] The base substrate SPUB can be a sapphire substrate, but the embodiments disclosed herein are not limited to this.

[0099] The n-type semiconductor NSEM can be disposed on one surface of the base substrate SPUB. In an embodiment, for example, the n-type semiconductor NSEM can be disposed on the bottom surface of the base substrate SPUB. The n-type semiconductor NSEM can include GaN doped with or made therefrom an n-type conductive dopant (such as Si, Ge, Sn, etc.).

[0100] An active quantum well (MQW) layer can be disposed on a portion of a surface of an n-type semiconductor NSEM. The active MQW layer can comprise materials having a single quantum well structure or a multiple quantum well structure. In embodiments where the active MQW layer comprises materials having a multiple quantum well structure, it can have a structure in which multiple well layers and barrier layers are alternately stacked. In this case, the well layers can be formed of InGaN, and the barrier layers can be formed of GaN or AlGaN, but are not limited thereto. Alternatively, the active MQW layer can have a structure in which semiconductor materials with large band gaps and semiconductor materials with small band gaps are alternately stacked, and can comprise different group III to group V semiconductor materials depending on the wavelength of the emitted light.

[0101] In embodiments of this disclosure, a flip-chip type light-emitting element is described as an example, but it is not limited thereto, and a vertical type light-emitting element can also be used.

[0102] Figure 5 This is a schematic diagram illustrating a light-emitting element transfer device LTD according to an embodiment.

[0103] The light-emitting element transfer device LTD according to the embodiment is a device for transferring light-emitting elements LE.

[0104] like Figure 5 As shown, the implementation of the light-emitting element transfer device LTD includes a drive unit DU, a transfer device TDU, a stage STG, and a controller CTU.

[0105] The drive unit DU enables the transfer device TDU to move up, down, left, and right. The drive unit DU may include an XY drive unit DU-1 and a Z drive unit DU-2.

[0106] The XY drive unit DU-1 moves the transfer device TDU above the stage STG on which the light-emitting element LE is placed.

[0107] The Z-drive unit DU-2 lowers the transfer device TDU to a predetermined distance from the light-emitting element LE to be picked up.

[0108] The transfer device (TDU) is a device used to pick up light-emitting elements (LEs).

[0109] The transfer device TDU can include, for example, one of an electrostatic chuck, an adhesive chuck, a vacuum chuck, and a porous vacuum chuck. The transfer device TDU can lift the light-emitting element (LE) by using the chuck to pick it up. Figure 5The diagram illustrates an embodiment of a transfer device TDU for transferring a light-emitting element (LE) to a substrate TS, but is not limited thereto. The transfer device TDU can be applied to soy flip-chip mounting in which flip chips are attached to bumps arranged in an array on the substrate TS, and the transfer device TDU can also be applied to so-called die bonding in which the light-emitting element (LE) is bonded to the substrate TS.

[0110] Please refer to later Figure 6 The structure of the transfer device TDU is described in more detail.

[0111] In the implementation method, such as Figure 5 As shown, the STG supports the substrate TS. The STG can be mounted at the center of the XY drive unit DU-1. In an embodiment, the STG can be mounted to move in the Y direction, but is not limited thereto.

[0112] The controller CTU is connected to the drive unit DU and the transfer device TDU, and is configured to perform the transfer process by controlling the operation of these components. For example, the controller CTU has an interface (not shown) that transmits and receives signals between the aforementioned components, such as the drive unit DU and the transfer device TDU. The controller CTU is configured to use feedback from detection results from a camera or sensor, etc., for the aforementioned combined process. In one embodiment, for example, the controller CTU identifies the markings on the stamp 230 and the substrate TS based on an image captured by a camera, detects the position, and controls the XY drive unit DU-1 and the Z drive unit DU-2 based on the detection results to perform control related to the transfer operation of aligning the position of the light-emitting element LE.

[0113] Next, the configuration of the implementation method of the transfer device TDU will be described.

[0114] Figure 6 This is a schematic diagram illustrating a transfer device TDU according to an embodiment.

[0115] refer to Figure 6 The implementation of the transfer device TDU may include a first transfer head 210, a second transfer head 220, a stamp 230, a tilt adjustment member 240, and a buffer member 250.

[0116] The first transfer head 210 is connected to the Z drive unit DU-2 and configured to support the second transfer head 220.

[0117] The first transfer head 210 defines a cavity having an opening in the downward direction. The width of the opening may be smaller than the width of the cavity.

[0118] The second transfer head 220 can be positioned below the first transfer head 210.

[0119] The second transfer head 220 can be divided into a first part 220-a, a second part 220-b, and a third part 220-c. The first part 220-a is disposed inside the cavity of the first transfer head 210, the third part 220-c is disposed outside the first transfer head 210, and the second part 220-b is disposed between the first part 220-a and the third part 220-c.

[0120] The second portion 220-b can be formed to have a width narrower than that of the first portion 220-a and the third portion 220-c, such that the first portion 220-a can be formed to be inserted into the cavity of the first transfer head 210. The first portion 220-a can have a shape corresponding to the shape of the cavity of the first transfer head 210.

[0121] The second transfer head 220 may include a chuck 221 on one side, and the chuck 221 is one of an electrostatic chuck, an adhesive chuck, a vacuum chuck, and a porous vacuum chuck. In an embodiment, for example, the chuck 221 may be disposed on one side of the third portion 220-c. The stamp 230 can be adsorbed onto one side of the second transfer head 220 via the chuck 221.

[0122] The stamp 230 can be set on the lower part of the second transfer head 220.

[0123] The stamp 230 may include multiple layers. In an embodiment, for example, the stamp 230 may include a base layer and a stamp layer.

[0124] The base layer can support the stamp layer. The base layer may include, for example, polyethylene terephthalate (PET), polyurethane (PU), polyimide (PI), polycarbonate (PC), polyethylene (PE), polypropylene (PP), polysulfone (PSF), polymethyl methacrylate (PMMA), triacetyl cellulose (TAC), cyclic olefin polymer (COP), or made thereof.

[0125] A stamp layer is disposed on one side of the base layer. The stamp layer includes multiple protrusions and allows the light-emitting element (LE) to adhere or bond to it. The stamp layer may include or be made of an adhesive or adhesive material, and the adhesive may include, for example, optically clear adhesive (OCA), pressure-sensitive adhesive (PSA), etc., and the adhesive material may include, for example, acrylic-based, urethane-based, or silicone-based adhesive materials. In an embodiment, one end of the multiple protrusions is flat, and the shape of the protrusions may be a polygonal pillar or a cylinder.

[0126] The tilt adjustment member 240 can adjust the relative flatness between the stamp 230 and the substrate TS by adjusting the tilt of the second transfer head 220.

[0127] The tilt adjustment member 240 may include a plurality of permanent magnets. The tilt adjustment member 240 may include a plurality of first permanent magnets 241 and a plurality of second permanent magnets 242. The plurality of first permanent magnets 241 may be attached to a first transfer head 210. The plurality of second permanent magnets 242 may be attached to a second transfer head 220. In an embodiment, for example, the plurality of first permanent magnets 241 may be attached to a cavity of the first transfer head 210 (i.e., the inner surface of the first transfer head 210 defining the cavity), and the plurality of second permanent magnets 242 may be attached to a first side 220-a1, a second side 220-a2, a third side 220-a3, and a fourth side 220-a4 of a first portion 220-a of the second transfer head 220. The number of first permanent magnets 241 and the number of second permanent magnets 242 are the same as each other.

[0128] The first permanent magnet 241 and the second permanent magnet 242 are arranged facing each other, and the polarities of the facing first permanent magnet 241 and the second permanent magnet 242 are the same. In one embodiment, for example, the S pole of the first permanent magnet 241 and the S pole of the second permanent magnet 242 face each other. The repulsive force between the facing magnetic poles of the first permanent magnet 241 and the second permanent magnet 242 is balanced, so that the first permanent magnet 241 and the second permanent magnet 242 do not contact each other, and the second transfer head 220 floats in the cavity.

[0129] In the implementation method, such as Figure 6 As shown, a total of five pairs of first permanent magnets 241 and second permanent magnets 242 can be set, but the number or position of the first permanent magnets 241 and second permanent magnets 242 is not limited to this.

[0130] In this embodiment, the magnetic force between the first permanent magnet 241 and the second permanent magnet 242 is used to return the second transfer head 220 to its original position even if the second transfer head 220 is tilted due to the external force when the external force is removed.

[0131] In this embodiment, since the second transfer head 220 is floated due to the repulsive force of the first permanent magnet 241 and the second permanent magnet 242, the first transfer head 210 can remain stationary even if the second transfer head 220 is tilted. In this embodiment, the second transfer head 220 can be tilted according to the flatness of the underlying substrate TS.

[0132] A buffer member 250 may be disposed on one side of the second transfer head 220 around the stamp 230. The buffer member 250 may protrude lower than the stamp 230. That is, the lower end of the buffer member 250 is positioned below the lower end of the stamp 230. In an embodiment, for example, the thickness of the buffer member 250 may be greater than the sum of the thickness of the stamp 230 and the thickness of the light-emitting element LE. Therefore, when the second transfer head 220 descends, the buffer member 250 may first contact the upper surface of the substrate TS.

[0133] The cushioning member 250 may include or be composed of a material that can be elastically deformed. In embodiments, for example, the cushioning member 250 may be formed of a multilayer silicone, a silicone-PET (polyethylene terephthalate) laminate, etc. However, it is not limited to these. In embodiments, for example, the cushioning member 250 may be a diaphragm.

[0134] The light-emitting element transfer device LTD may also include a gas flow path 255 and a gas supply component 260.

[0135] The gas flow path 255 is a path for supplying gas to the buffer member 250 and can be set or limited in the second transfer head 220.

[0136] The gas supply component 260 can supply gas to the buffer component 250 through the gas flow path 255 to cause the buffer component 250 to expand.

[0137] The gas supply component 260 can supply inert or very low chemical reactivity gases (such as nitrogen (N2), helium (He), neon (Ne), argon (Ar), carbon dioxide (CO2), or mixtures thereof) to the interior space. In the following text, such inert or very low chemical reactivity gases are collectively referred to as neutral gases.

[0138] The gas supply component 260 may include a gas storage container, a gas pump for pressurizing and supplying the gas, a gas valve for controlling the flow of the gas, etc. Furthermore, the gas supply component 260 can discharge gas that has already expanded the buffer component 250 through the gas flow path 255.

[0139] The gas valve can be closed to stop the gas supply and maintain the internal pressure of the buffer member 250 when the pressure inside the buffer member 250 is sufficiently high. The gas valve can be, for example, a ball valve, a gate valve, a control valve, etc., and is not particularly limited thereto.

[0140] Figures 7 to 10 It is a plan view showing the number and shape of the buffer components.

[0141] refer to Figures 7 to 10 In implementation, the number and shape of the buffer components can be changed in various ways.

[0142] refer to Figures 7 to 10The stamp 230 may have a shape (planar shape) corresponding to the shape of the second transfer head 220. In an embodiment, for example, if the second transfer head 220 has a square shape, the stamp 230 may also have a square shape, but is not limited thereto. In an embodiment, for example, the second transfer head 220 and the stamp 230 may have a circular shape in a planar view.

[0143] In the plan view, the buffer member 250 may be disposed on one side of the second transfer head 220 around the stamp 230. The buffer member 250 does not overlap with the stamp 230 in the plan view.

[0144] refer to Figure 7 and Figure 8 Multiple buffer components 250 can be circular in the plan view.

[0145] In implementation, for example, refer to Figure 7 (a) Multiple buffer components 250 can be respectively set at the four corners of the second transfer head 220.

[0146] In another embodiment, reference Figure 7 (b) Multiple buffer members 250 may be respectively disposed at the center of each side of the second transfer head 220.

[0147] In another embodiment, reference Figure 8 (a) Multiple buffer members 250 may be respectively disposed at the four corners of the second transfer head 220 and at the center of each side.

[0148] In another embodiment, reference Figure 8 (b) In addition to the four corners of the second transfer head 220, a plurality of buffer members 250 may be respectively provided on each side of the second transfer head 220. In an embodiment, for example, three buffer members 250 may be provided on each side.

[0149] In another embodiment, reference Figure 8 (c) Multiple buffer members 250 may be provided at the four corners of the second transfer head 220 and at each side of the second transfer head 220. Each of the buffer members 250 may be provided at equal intervals, but is not limited thereto.

[0150] refer to Figure 9 Multiple buffer members 250 can be polygons with corners in a plan view.

[0151] refer to Figure 9(a) In one embodiment, a plurality of buffer members 250 may be arranged around the corners of the stamp 230 at the four corners of the second transfer head 220. In another embodiment, for example, the buffer members 250 may be in the shape of the letters “ㄱ” or “ㄴ”.

[0152] refer to Figure 9 (b) In another embodiment, a plurality of buffer members 250 may be arranged in a rectangular shape at the center of each side of the second transfer head 220.

[0153] refer to Figure 9 (c) In another embodiment, the plurality of buffer members 250 may have different shapes. In an embodiment, for example, the plurality of buffer members 250 may be arranged around the corners of the stamp 230 at the four corners of the second transfer head 220, and may also be arranged in a rectangular shape at the center of each side of the second transfer head 220.

[0154] refer to Figures 7 to 9 The buffer member 250 may be discontinuously arranged around the stamp 230.

[0155] refer to Figure 10 In the plan view, the buffer member 250 may be continuously arranged around the stamp 230. In an embodiment, for example, the buffer member 250 may be a single square ring shape surrounding the stamp 230 at the second transfer head 220.

[0156] refer to Figures 7 to 10 In this embodiment, the number and shape of the buffer members 250 can be varied.

[0157] Figure 11 This diagram illustrates the operation of a light-emitting element transfer device without tilt adjustment components and buffer components.

[0158] Excluding tilt adjustment components ( Figure 6 240) and buffer components ( Figure 6 In a conventional light-emitting element transfer device (250), the light-emitting element LE attached to the stamp 230 can rotate after contacting the surface of the substrate TS due to bending or tilting of the substrate TS. Therefore, a change in planar position can occur due to the rotation of the stamp 230. Consequently, the light-emitting element LE that first contacts the surface of the substrate TS may fall off or become misaligned due to the force applied in the planar direction on the surface of the substrate TS. In this case, the aforementioned problem can occur more extensively due to the frequent bending or tilting of the substrate TS (especially in the case of large-sized substrate TS).

[0159] Figure 12 This is a schematic diagram illustrating a transfer device TDU according to another embodiment.

[0160] In addition to the pressure member 270 included in the transfer device TDU between the first transfer head 210 and the second transfer head 220, Figure 12 The transfer device TDU shown is Figure 6 The transfer device TDU shown is essentially the same. Figure 6 The above description can be applied equally to configurations other than pressure member 270, and the following description will focus on pressure member 270.

[0161] In one embodiment, a pressure member 270 is disposed in the cavity of the first transfer head 210 and between the first transfer head 210 and the second transfer head 220, such that the second transfer head 220 can be pressurized while maintaining the space between the first transfer head 210 and the second transfer head 220.

[0162] In such an embodiment, the pressure member 270 may include, for example, a spring, but is not limited thereto. In an embodiment where the pressure member 270 is formed as a spring, the pressure member 270 can effectively prevent sudden transfer of pressure when pressure is applied from the top to the bottom of the first transfer head 210.

[0163] In the implementation method, such as Figure 12 As shown, a single pressure member 270 may be disposed between the first transfer head 210 and the second transfer head 220, but the number of pressure members 270 is not limited. In another embodiment, for example, multiple springs may be disposed between the first transfer head 210 and the second transfer head 220.

[0164] Figure 13 This is a schematic diagram illustrating a transfer device TDU according to another embodiment.

[0165] In addition to the pressure member 270 between the first transfer head 210 and the second transfer head 220 included in the transfer device TDU Figure 13 The transfer device TDU shown is Figure 6 The transfer device TDU shown is essentially the same. Figure 6 The above description can be applied equally to configurations other than pressure member 270, and the following description will focus on pressure member 270.

[0166] In one embodiment, the pressure member 270 is disposed in the cavity of the first transfer head 210 and between the first transfer head 210 and the second transfer head 220, thereby maintaining the space between the first transfer head 210 and the second transfer head 220.

[0167] In an embodiment, the pressure member 270 may be a member for preventing sudden pressure transfer when pressure is applied from the top direction to the bottom direction of the first transfer head 210.

[0168] In the implementation method, such as Figure 13 As shown, the pressure member 270 may include an elastic membrane 271, a gas conduit 272, and a gas supply member 273.

[0169] The elastic membrane 271 may include or be formed of an elastic material such as an elastomer.

[0170] The space S can be set or limited between the elastic membrane 271 and the first transfer head 210.

[0171] Gas conduit 272 can supply gas into the space S between the elastic membrane 271 and the first transfer head 210, causing the elastic membrane 271 to expand downward. When the elastic membrane 271 expands, the second transfer head 220 is pressurized.

[0172] Gas supply component 273 supplies gas to space S through gas conduit 272. Gas supply component 273 controls the expansion force of elastic membrane 271, thereby effectively controlling the pressure applied to second transfer head 220.

[0173] Gas supply component 273 can supply inert or very low chemical reactivity gases, such as nitrogen (N2), helium (He), neon (Ne), argon (Ar), carbon dioxide (CO2), or mixtures thereof, to the internal space. In the following text, such inert or very low chemical reactivity gases are collectively referred to as neutral gases.

[0174] Figure 14 This is a schematic diagram illustrating a transfer device TDU according to another embodiment.

[0175] In addition to the transfer device TDU, it also includes a tilting portion 220-ab between the first portion 220-a and the second portion 220-b, and provides a relatively small number of tilt adjustment members 240. Figure 14 The transfer device TDU shown is Figure 6 The transfer device TDU shown is essentially the same.

[0176] In one embodiment, the inclined portion 220-ab is disposed between the first portion 220-a having a first width Wa and the second portion 220-b having a second width Wb, and connects one end of the first portion 220-a and one end of the second portion 220-b, and has an inclination angle with respect to the side parallel to the first side 220-a1 of the first portion 220-a, that is, it has an inclined surface that is inclined with respect to the side parallel to the first side 220-a1 of the first portion 220-a.

[0177] The tilt adjustment member 240 can be disposed on the first side 220-a1 and the tilt portion 220-ab of the second transfer head 220, and can include a total of three pairs of first permanent magnets 241 and second permanent magnets 242.

[0178] Figure 15 This is a schematic diagram illustrating a transfer device TDU according to another embodiment.

[0179] In addition to the pressure member 270 included in the transfer device TDU between the first transfer head 210 and the second transfer head 220, Figure 15 The transfer device TDU shown is Figure 14 The transfer device TDU shown is essentially the same. Figure 14 The above description can be applied equally to configurations other than pressure member 270, and the following description will focus on pressure member 270.

[0180] In one embodiment, a pressure member 270 is disposed in the first transfer head 210 and between the first transfer head 210 and the second transfer head 220, such that the second transfer head 220 can be pressurized while maintaining the space between the first transfer head 210 and the second transfer head 220.

[0181] In some embodiments, the pressure member 270 may include, for example, a spring, but is not limited thereto. In this embodiment where the pressure member 270 is formed as a spring, the pressure member 270 can effectively prevent sudden pressure transfer when pressure is applied from the top to the bottom of the first transfer head 210.

[0182] In the implementation method, such as Figure 15 As shown, a single pressure member 270 is disposed between the first transfer head 210 and the second transfer head 220, but the number of pressure members 270 is not limited.

[0183] Figure 16 This is a schematic diagram illustrating a transfer device TDU according to another embodiment.

[0184] In addition to the pressure member 270 included in the transfer device TDU between the first transfer head 210 and the second transfer head 220, Figure 16 The transfer device TDU shown is Figure 14 The transfer device TDU shown is essentially the same. Figure 14 The above description can be applied equally to configurations other than pressure member 270, and the following description will focus on pressure member 270.

[0185] In one embodiment, the pressure member 270 is disposed in the cavity of the first transfer head 210 and between the first transfer head 210 and the second transfer head 220, thereby maintaining the space between the first transfer head 210 and the second transfer head 220.

[0186] In an embodiment, the pressure member 270 may be a member for preventing sudden pressure transfer when pressure is applied from the top direction to the bottom direction of the first transfer head 210.

[0187] In the implementation method, such as Figure 16 As shown, the pressure member 270 may include an elastic membrane 271, a gas conduit 272, and a gas supply member 273.

[0188] The elastic membrane 271 may include or be formed of an elastic material such as an elastomer.

[0189] The space S can be set or limited between the elastic membrane 271 and the first transfer head 210.

[0190] Gas conduit 272 can supply gas into the space S between the elastic membrane 271 and the first transfer head 210, causing the elastic membrane 271 to expand downward. When the elastic membrane 271 expands, the second transfer head 220 is pressurized.

[0191] Gas supply component 273 supplies gas to space S through gas pipe 272.

[0192] Gas supply component 273 can supply inert or very low chemical reactivity gases, such as nitrogen (N2), helium (He), neon (Ne), argon (Ar), carbon dioxide (CO2), or mixtures thereof, to the internal space. In the following text, such inert or very low chemical reactivity gases are collectively referred to as neutral gases.

[0193] Figure 17 This is a schematic diagram illustrating a transfer device TDU according to another embodiment.

[0194] Except for the first transfer head 210, the second transfer head 220, and the tilt adjustment member 240, which are formed or defined by the air gyroscope AG. Figure 17 The transfer device TDU shown is Figure 14 The transfer device TDU shown is essentially the same.

[0195] In this embodiment, when the buffer member 250 contacts the substrate TS, the air gyroscope AG can adjust the relative flatness between the stamp 230 and the substrate TS. The relative flatness between the stamp 230 and the substrate TS can be adjusted more precisely by the air gyroscope AG.

[0196] Figure 18This is a flowchart illustrating a light-emitting element transfer method according to an embodiment. Figures 19 to 23 This is a cross-sectional view illustrating an embodiment of the light-emitting element transfer method. Figures 19 to 23 A cross-sectional view of the structure of the transfer device TDU according to the transfer order of the light-emitting elements LE is shown. Figures 19 to 23 The main components shown are the transfer device TDU and the light-emitting element LE, which can be roughly corresponding to the reference. Figures 6 to 10 A sectional view or plan view of the transfer unit (TDU) described below. Figure 18 describe Figures 19 to 23 The light-emitting element transfer method shown in the figure.

[0197] In an embodiment of the light-emitting element transfer method, the transfer device TDU is disposed on the substrate TS. Figure 18 (S110 in the middle).

[0198] refer to Figure 19 The light-emitting element LE and the first alignment mark AM1 can be attached to the stamp 230 of the transfer device TDU.

[0199] The second alignment mark AM2 can be set on the substrate TS.

[0200] As per the above reference Figure 5 As described, the transfer device TDU can be positioned at the desired location by means of the XY drive unit DU-1 and Z drive unit DU-2 of the light-emitting element transfer device LTD.

[0201] In an implementation, for example, the transfer device TDU can place the stamp 230 on the substrate TS by checking the first alignment mark AM1 and the second alignment mark AM2 set on the stamp 230.

[0202] In an embodiment of the light-emitting element transfer method, the transfer device TDU can be reduced so that the lower surface of the buffer member 250 can contact the substrate TS. Figure 18 (S120 in the middle).

[0203] In implementation methods, for example, such as Figure 20 As shown, when the transfer device TDU can be lowered and the substrate TS tilts or bends, some of the buffer members 250-2 in the buffer members 250 can first contact the substrate TS. Then, when the transfer device TDU is lowered further, the remaining buffer members 250-1 can contact the substrate TS.

[0204] Before the lower surfaces of buffer members 250-1 and 250-2 come into contact with the substrate TS, gas is supplied to buffer members 250-1 and 250-2. Since the thickness of buffer members 250-1 and 250-2 to which gas is supplied is greater than the sum of the thickness of the stamp 230 and the thickness of the light-emitting element LE, the light-emitting element LE may not come into contact with the substrate TS while buffer members 250-1 and 250-2 are in contact with the substrate TS.

[0205] In an embodiment of the light-emitting element transfer method, the flatness of the second transfer head 220 is adjusted to the flatness of the substrate TS by the tilt adjustment member 240. Figure 18 (S130 in the middle).

[0206] In implementation methods, for example, such as Figure 21 As shown, for example, while the light-emitting element LE is in a non-contact state with the substrate TS, the relative flatness of the second transfer head 220 and the substrate TS can be adjusted. In this way, since the alignment of the light-emitting element LE is not interfered with while adjusting the relative flatness of the second transfer head 220 and the substrate TS, high precision of the light-emitting element LE can be ensured.

[0207] In an embodiment of the light-emitting element transfer method, the second transfer head 220 is pressed and the light-emitting element LE is transferred. Figure 18 (S140 in the middle).

[0208] In implementation methods, for example, such as Figure 22 As shown, the second transfer head 220 can be further lowered to pressurize the buffer member 250, thereby bringing the light-emitting element LE into contact with the substrate TS. When the buffer member 250 contracts due to the pressure, the light-emitting element LE can contact the substrate TS.

[0209] The buffer member 250 can reach its maximum contraction length due to pressure and limit the descent position of the light-emitting element LE. Once the buffer member 250 has reached its maximum contraction length, it can effectively prevent excessive descent of the second transfer head 220 by ceasing to contract. The buffer member 250 can contract to its maximum contraction length while pressing and deforming the substrate TS. Because the descent position is limited by the buffer member 250, damage to the light-emitting element LE can be effectively prevented.

[0210] In an implementation of the light-emitting element transfer method, reference is made to... Figure 23 The transfer device TDU can be lifted to separate the light-emitting element LE from the stamp 230.

[0211] The display device according to one embodiment of the present disclosure can be applied to various electronic devices. The electronic device according to one embodiment of the present disclosure includes the aforementioned display device, and may further include modules or devices with additional functions besides the display device.

[0212] Figure 24 This is a block diagram of an electronic device according to one embodiment of the present disclosure.

[0213] refer to Figure 24 An electronic device 1 according to one embodiment of the present disclosure may include a display module 11, a processor 12, a memory 13 and a power module 14.

[0214] The processor 12 may include at least one of a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0215] The memory 13 can store the data information required for the operation of the processor 12 or the display module 11. When the processor 12 executes the application stored in the memory 13, image data signals and / or input control signals are transmitted to the display module 11, and the display module 11 can process the received signals and output image information through the display screen.

[0216] The power module 14 may include a power supply module such as a power adapter or battery, and a power conversion module that converts the power supplied by the power supply module to generate the power required for the operation of the electronic device 1.

[0217] At least one of the components of an electronic device 1 according to one embodiment of the present disclosure may be included in a display device 10 according to an embodiment of the present disclosure. Furthermore, some modules that are functionally included in a single module may be included in the display device 10, while other modules may be disposed separately from the display device 10. For example, the display device 10 may include a display module 11, and the processor 12, memory 13, and power module 14 may be disposed as other devices within the electronic device 1 besides the display device 10.

[0218] Figure 25 This is a schematic diagram of an electronic device according to various embodiments of the present disclosure.

[0219] refer to Figure 25The various electronic devices that can be used in the display device 10 according to the embodiments of the present disclosure include not only image display electronic devices, but also wearable electronic devices including display modules and vehicle electronic devices 10_3 including display modules. Image display electronic devices include, for example, smartphones 10_1a, tablet PCs (personal computers) 10_1b, laptop computers 10_1c, TVs 10_1d and desktop monitors 10_1e. Wearable electronic devices include, for example, smart glasses 10_2a, head-mounted displays 10_2b and smartwatches 10_2c. Vehicle electronic devices 10_3 include, for example, CID (central information display) arranged on the central dashboard and dashboard of a vehicle, as well as interior mirror displays.

[0220] This invention should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art.

[0221] Although the invention has been specifically shown and described with reference to embodiments thereof, those skilled in the art will understand that various changes in form and detail may be made therein without departing from the spirit or scope of the invention as defined by the appended claims.

Claims

1. A light emitting element transfer apparatus comprising: a first transfer head; a second transfer head disposed below the first transfer head; a stamp disposed below the second transfer head; a tilt adjustment member that adjusts a tilt of the second transfer head; and a buffer member disposed below the second transfer head so as to be adjacent to the stamp and to project in a downward direction so as to be lower than the stamp, wherein the buffer member includes an elastic material, wherein a thickness of the buffer member is greater than a sum of a thickness of the stamp and a thickness of a light emitting element.

2. The light emitting element transfer apparatus according to claim 1, further comprising: a gas flow path disposed in the second transfer head so as to supply a gas to the buffer member; and a gas supply member that supplies the gas to the buffer member through the gas flow path. The first transfer head defines a cavity having an opening in the downward direction, and a width of the opening is smaller than a width of the cavity.

4. The light emitting element transfer apparatus according to claim 3, 3. The light emitting element transfer apparatus according to claim 1, wherein the second transfer head is divided into a first portion disposed in the cavity, a third portion disposed outside the first transfer head, and a second portion disposed between the first portion and the third portion, and wherein a width of the second portion is narrower than a width of the first portion and a width of the third portion. wherein The tilt adjustment member includes a first permanent magnet disposed on the first transfer head and a second permanent magnet disposed on the first portion of the second transfer head so as to face the first permanent magnet and have a repulsive force with the first permanent magnet. The second transfer head includes a chuck on one side and sucks the stamp through the chuck.

5. The light-emitting element transfer apparatus according to claim 4, wherein The second transfer head is divided into a first portion disposed in the cavity, a third portion disposed outside the first transfer head, a second portion disposed between the first portion and the third portion, and a tilt portion disposed between the first portion and the second portion, 6. The light emitting element transfer apparatus according to claim 1, wherein wherein a width of the second portion is narrower than a width of the first portion and a width of the third portion.

7. The light emitting element transfer apparatus according to claim 3, wherein The tilt adjustment member includes a plurality of second permanent magnets disposed on the first portion and the tilt portion and a plurality of first permanent magnets corresponding to the plurality of second permanent magnets and disposed on the first transfer head.

9. The light emitting element transfer apparatus according to claim 1, further comprising:

8. The light-emitting element transfer apparatus according to claim 7, wherein a pressure member disposed between the first transfer head and the second transfer head within a cavity of the first transfer head, wherein the pressure member presses the second transfer head in the downward direction. The pressure member includes a spring. The pressure member includes:

10. The light-emitting element transfer apparatus according to claim 9, wherein an elastic film disposed on the second transfer head within the cavity of the first transfer head; 11. The light-emitting element transfer apparatus according to claim 9, wherein a gas duct that supplies a gas to a space between the elastic film and the first transfer head; and a gas supply member that supplies the gas to the gas duct. The first transfer head, the second transfer head, and the tilt adjustment member collectively define an air gyroscope.

13. The light emitting element transfer apparatus according to claim 1, 12. The light emitting element transfer apparatus according to claim 1, wherein the buffer member is discontinuously disposed around the stamp in a plan view. ​ wherein ​ 14. The light emitting element transfer apparatus according to claim 1, wherein The cushioning member is continuously disposed around the stamp in a plan view.

15. The light emitting element transfer apparatus according to claim 1, wherein The cushioning member includes a diaphragm.

16. The light-emitting element transfer apparatus according to claim 1, wherein The second transfer head includes a chuck disposed at a lower portion of the second transfer head, and the stamp is sucked by the chuck.

17. A method of transferring a light emitting element, the method comprising: disposing a transfer apparatus including a cushioning member and a stamp on a substrate; lowering the transfer apparatus to bring a lower surface of the cushioning member into contact with the substrate, wherein a thickness of the cushioning member is thicker than a sum of a thickness of the stamp and a thickness of the light emitting element; adjusting flatness of the transfer apparatus to flatness of the substrate; and pressing the cushioning member to contact the substrate and transfer the light emitting element onto the substrate, wherein the cushioning member includes an elastic material, and the thickness of the cushioning member is thinned when the cushioning member is pressed.

18. The method of claim 17, disposing the transfer apparatus on the substrate includes aligning the light emitting element disposed on the stamp with the substrate based on a first alignment mark disposed on a side of the stamp and a second alignment mark disposed on the substrate.

19. The method of claim 17, wherein, the transfer apparatus includes a first transfer head, a second transfer head disposed below the first transfer head, and a tilt adjustment member that adjusts a tilt of the second transfer head, and wherein adjusting the flatness of the transfer apparatus to the flatness of the substrate includes adjusting a flatness of the second transfer head by the tilt adjustment member while the second transfer head is not in contact with the first transfer head.

20. The method of claim 17, wherein, the transfer apparatus includes a gas supply member that supplies a gas to the cushioning member and a gas flow path connected between the gas supply member and the cushioning member, wherein the method further includes supplying the gas to the cushioning member before lowering the transfer apparatus to bring the lower surface of the cushioning member into contact with the substrate.

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