A device structure for connecting a diamond member with a package can

Abstract

The application relates to the technical field of electronic device packaging, and discloses a device structure for connecting a diamond component and a packaging tube shell, which comprises a diamond component, a gradient intermediate layer, an elastic pre-tightening component and a packaging tube shell; the diamond component is embedded into the shell of the packaging tube shell; the gradient intermediate layer is arranged between the diamond component and the packaging tube shell; the gradient intermediate layer comprises a buffer layer and an active metal bonding layer in sequence from the diamond component to the packaging tube shell; the elastic pre-tightening component is fixedly connected with the diamond component and the shell of the packaging tube shell respectively, and is used for realizing fastening and clamping between the diamond component, the gradient intermediate layer and the packaging tube shell. The scheme aims to ensure that the interface between the diamond component and the packaging tube shell is kept close for a long time under the dual action of chemical / metallurgical combination and mechanical pre-tightening through the composite gradient intermediate layer; and the scheme can be adapted to various chip types with high heat dissipation requirements.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of electronic device packaging, in particular to a device structure for connecting a diamond component and a packaging tube shell. BACKGROUND

[0002] In high-power electronic devices, high-frequency devices and harsh environment applications, diamond is an ideal heat dissipation window, heat path or structural component due to its extremely high thermal conductivity, excellent mechanical strength and chemical inertness. Embedding the diamond component into the packaging tube shell and achieving low thermal resistance and long-term stable interface connection are important means to improve the power density and reliability of the device. However, there are significant differences in chemical compatibility, surface chemical activity and coefficient of thermal expansion (CTE) between diamond itself and common packaging materials (such as metals or ceramics), and direct bonding often faces problems such as poor interface wetting, low interface bonding strength, peeling or cracking caused by thermal cycling, and substandard air tightness.

[0003] The prior art usually uses adhesives, thermal conductive glue, mechanical clamps, brazing or glass frit sealing to realize the combination of diamond and packaging materials. Adhesives and thermal conductive glue are convenient to assemble at room temperature, but they are prone to thermal aging, softening or interface cracking under high temperature or long-term thermal cycling conditions, resulting in increased thermal resistance and loose contact; mechanical clamps are easy to replace, but they may lose preload under long-term vibration or thermal stress. High-temperature brazing and active metalization processes can obtain high metallurgical bonding strength and low thermal resistance, but the high-temperature process required may damage sensitive devices inside the packaging, and simple metallurgical bonding may still cause stress concentration and interface failure in repeated thermal cycling in systems with strict thermal expansion mismatch. Glass or metal-based packaging materials have poor wettability for diamond, resulting in mechanical engagement as the main mode and weak chemical bonding, resulting in low joint strength. SUMMARY

[0004] To solve the existing problems, the present application provides a device structure for connecting a diamond component and a packaging tube shell, which aims to ensure that the interface between the diamond component and the packaging tube shell remains tight in daily applications through the dual action of chemical / metallurgical bonding and mechanical pre-tightening of the composite gradient intermediate layer; it can be adapted to various chip types with high heat dissipation requirements, improving the heat dissipation requirements while still being suitable for existing traditional processes, without high costs, providing a low-cost, compatible and high-performance heat dissipation structure for the current semiconductor, AI, communication and unmanned driving fields.

[0005] To achieve the above-mentioned purposes, the present application provides the following technical solutions.

[0006] The device structure for connecting the diamond component and the encapsulation tube shell comprises a diamond component, a gradient intermediate layer, an elastic pre-tightening component and an encapsulation tube shell; the diamond component is embedded into the shell of the encapsulation tube shell; the gradient intermediate layer is arranged between the diamond component and the encapsulation tube shell; the gradient intermediate layer comprises a buffer layer and an active metal bonding layer in sequence from the diamond component to the encapsulation tube shell; the elastic pre-tightening component is fixedly connected with the diamond component and the shell of the encapsulation tube shell respectively, and is used for realizing the fastening clamping between the diamond component, the gradient intermediate layer and the encapsulation tube shell.

[0007] As a further improvement of the present application, the elastic pre-tightening component applies a radial or axial fastening force to the diamond component.

[0008] As a further improvement of the present application, the encapsulation tube shell is provided with a groove or a heat dissipation hole at a device mounting position; the diamond component extends into the groove or the heat dissipation hole.

[0009] As a further improvement of the present application, the gradient intermediate layer further comprises a top layer metal welding layer arranged on the side of the active metal bonding layer away from the buffer layer.

[0010] As a further improvement of the present application, the gradient intermediate layer further comprises an active solder layer arranged on the side of the top layer metal welding layer away from the active metal bonding layer.

[0011] As a further improvement of the present application, the gradient intermediate layer further comprises a glass frit layer arranged on the side of the active solder layer away from the top layer metal welding layer.

[0012] As a further improvement of the present application, the elastic pre-tightening component is a metal corrugated ring, a wave spring ring or a micro round ring spring, and the material thereof is stainless steel, nickel-based alloy or beryllium copper alloy.

[0013] As a further improvement of the present application, the contact pressure between the elastic pre-tightening component and the diamond component is between 0.05 MPa and 10 MPa.

[0014] As a further improvement of the present application, the buffer layer is one or more of SiO2, Al2O3 and TiO2, and the thickness of the buffer layer is between 5 nm and 200 nm.

[0015] As a further improvement of the present application, the active metal bonding layer is made of Ti, Zr or a Ti-containing alloy, and the thickness of the active metal bonding layer is between 5 nm and 500 nm.

[0016] The present application has the following beneficial effects:

[0017] By the combination design of gradient interlayer and elastic pre-tightening component, the tight holding of diamond component and packaging tube shell is realized, while the mechanical stress buffering and thermal expansion matching are also considered. The buffer layer can absorb the stress generated by the difference in thermal expansion coefficient between diamond and tube shell, avoiding interface cracking; the active metal bonding layer provides high-strength metallurgical bonding, ensuring long-term reliability; the elastic pre-tightening component compensates the micro-displacement caused by thermal expansion or vibration through continuous pressure, further enhancing the stability of the interface connection, and the service life of the elastic pre-tightening component is longer. The overall structure significantly improves the heat dissipation efficiency and thermal shock resistance of the packaging body.

[0018] The elastic pre-tightening component exerts radial or axial fastening force on the diamond component. The diamond component may expand or deform radially due to centrifugal force, and the elastic pre-tightening component limits its radial displacement by exerting radial pressure, maintaining geometric precision. In a composite structure with a large difference in thermal expansion coefficient, axial pre-tightening force can compensate for the difference in thermal expansion, ensuring continuous close contact of the contact surface and preventing cracking or delamination due to thermal stress; the axial pre-tightening force can offset the axial force fluctuation, avoiding excessive or insufficient gap between the diamond component and the device inside the packaging tube shell.

[0019] Preferably, a heat dissipation hole or groove is opened at the heat dissipation position of the packaging tube shell, and the diamond component is inserted into it, directly shortening the heat conduction path and reducing the thermal resistance. Diamond, as a high thermal conductivity material, maximizes its thermal conductivity performance by directly contacting the inner wall of the heat dissipation hole or groove, allowing heat to be transferred more quickly from the device interior to the external environment, especially suitable for the heat dissipation needs of high-power density electronic devices. The gradient interlayer is arranged between the diamond component and the inner wall of the heat dissipation hole or groove, further optimizing the heat conduction interface. The gradient interlayer, through the layered design of buffer layer and active metal bonding layer, not only ensures the physical contact tightness of diamond and tube shell, but also reduces the interface thermal resistance through material gradient transition, while relieving local stress concentration caused by machining errors or thermal deformation, improving the long-term thermal cycle reliability of the packaging structure.

[0020] Preferably, the addition of a top metal welding layer can form a multi-level metallurgical bonding interface, enhancing the connection strength of the gradient interlayer and the packaging tube shell; the metal welding layer is combined with the tube shell through a fusion welding process, significantly improving the interface shear and peel resistance compared to simply relying on the bonding layer or mechanical pressing, especially suitable for harsh application scenarios in high-temperature or vibration environments.

[0021] Preferably, through the chemical reaction between active elements (such as Ti, Zr) in the filler metal and the diamond surface, a chemical bond is formed, significantly improving the interface bonding strength. The active filler metal layer has excellent wettability after melting at high temperature, can fill micron-level pores, and its thermal conductivity is better than glass, further optimizing the heat conduction path of the packaging structure.

[0022] Preferably, a glass frit layer is introduced between the top metal solder layer and the package can, taking advantage of the high-temperature fluidity of glass materials to fill microscopic gaps and form a dense and pore-free sealing interface, thereby enhancing airtightness and improving thermal expansion matching; such materials can be molten and solidified at low temperatures, avoiding thermal damage to the diamond or the can, while their chemical stability and insulation can prevent electrochemical corrosion and extend the service life of the package.

[0023] Preferably, a metal corrugated ring, a wave spring ring, or a micro round spring is selected as the elastic pre-tightening component, and the material is limited to stainless steel, nickel-based alloy, or beryllium copper alloy, taking into account both elastic performance and corrosion resistance. Such components can provide stable and adjustable pre-tightening force in a compressed state, adapting to the holding needs of diamond components of different sizes; high-strength alloy materials ensure long-term service capability in high-temperature or corrosive environments, with a service life of several years or even decades, avoiding the risk of elastic failure.

[0024] Preferably, the contact pressure of the elastic pre-tightening component and the diamond component is limited to the range of 0.05 MPa to 10 MPa, which not only ensures sufficient pre-tightening force to maintain the tightness of the interface contact and prevent separation caused by thermal expansion, but also avoids excessive pressure causing mechanical damage to the diamond or the can. This pressure range is determined through experiments to balance structural reliability and material safety.

[0025] Preferably, the buffer layer is limited to one of SiO2, Al2O3, or TiO2 or a combination thereof, and the thickness is controlled to be 5 nm to 200 nm, achieving fine regulation of interface stress. Such oxide materials have high elastic modulus and chemical stability, and a nanoscale thickness can form a flexible transition layer that effectively absorbs stress caused by thermal expansion differences; at the same time, their thermal conductivity is better than that of polymer materials, avoiding the introduction of additional thermal resistance by the buffer layer.

[0026] Optionally, Ti, Zr, or Ti-containing alloy is selected as the active metal bonding layer, and the thickness is controlled to be 5 nm to 500 nm, taking advantage of the high reactivity of these metals with diamond and can materials to form strong metallurgical bonding. The nanoscale to microscale thickness design not only ensures sufficient reaction layer thickness to achieve reliable bonding, but also avoids material waste and excessive thermal influence; the excellent oxidation resistance of Ti / Zr-based alloys further improves the stability of the packaging structure in high-temperature environments. BRIEF DESCRIPTION OF DRAWINGS

[0027] The drawings described herein are for illustrative purposes only and are not intended to limit the scope of the present disclosure in any way. In addition, the shapes and proportions of the components in the drawings are only illustrative and are used to help understand the present invention, and are not specific limitations on the shapes and proportions of the components of the present invention. In the drawings:

[0028] Figure 1A cross-sectional view of a device structure for connecting a diamond member and a package can according to Example 1;

[0029] Figure 2 A top view of a device structure for connecting a diamond member and a package can according to Example 1;

[0030] Figure 3 A cross-sectional view of a device structure for connecting a diamond member and a package can according to Example 2;

[0031] Figure 4 A top view of a device structure for connecting a diamond member and a package can according to Example 2;

[0032] Figure 5 A cross-sectional view of a device structure for connecting a diamond member and a package can according to Example 3;

[0033] Figure 6 A top view of a device structure for connecting a diamond member and a package can according to Example 3;

[0034] Figure 7 A cross-sectional view of a device structure for connecting a diamond member and a package can according to Example 4;

[0035] Figure 8 A top view of a device structure for connecting a diamond member and a package can according to Example 4;

[0036] Figure 9 A cross-sectional view of another alternative embodiment of a device structure for connecting a diamond member and a package can according to Example 4;

[0037] Figure 10 A top view of another alternative embodiment of a device structure for connecting a diamond member and a package can according to Example 4;

[0038] Wherein, 1, diamond member; 2, elastic pre-tightening member; 3, package can; 4, gradient intermediate layer; 5, buffer layer; 6, active metal bonding layer; 7, top layer metal solder layer; 8, active solder layer; 9, glass frit layer; 10, heat-conducting elastic pad layer. DETAILED DESCRIPTION

[0039] In order to make the technical scheme in the present application better understood, the technical scheme in the embodiments of the present application will be described clearly and completely below with reference to the accompanying drawings of the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present application.

[0040] It should be noted that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements can also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements can also be present. The terms "vertical", "horizontal", "left", "right" and similar expressions as used herein are for illustrative purposes only and are not intended to be limiting.

[0041] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0042] Embodiment 1

[0043] As shown in Figure 1 and Figure 2 A packaging structure for tightly holding a diamond component and a packaging shell 3, including a diamond component 1, a gradient intermediate layer 4 and a packaging shell 3; the diamond component 1 corresponds to a device mounting position in the packaging shell 3; the device is one or more of a chip, a heat generating element, a PCB board and an FPGA board.

[0044] The heat dissipation position on the packaging shell 3 is provided with an annular groove; the thickness of the packaging shell 3 at the groove can be 10 nm, or even thinner; the diamond component 1 is embedded on the annular groove of the packaging shell 3 through the gradient intermediate layer 4; the gradient intermediate layer 4, from the diamond component 1 to the packaging shell 3, includes a buffer layer 5 and an active metal bonding layer 6 in sequence.

[0045] The buffer layer 5 is one or a combination of SiO2, Al2O3 or TiO2, and the thickness is 5 nm to 200 nm. The buffer oxide or nitride film is prepared by atomic layer deposition (ALD) or chemical vapor deposition (CVD), and the thickness is preferably 10 nm to 50 nm.

[0046] The active metal bonding layer 6 is made of Ti, Zr or Ti-containing alloy, and has a thickness of 5 nm to 500 nm.

[0047] Optionally, the embodiment further comprises elastic pre-tightening members 2, which are respectively fixedly connected with two opposite positions of the package tube shell 3 (two positions on the edge of the groove are collinear), and are fixedly connected with the diamond member 1, so as to realize the fastening and clamping between the diamond member 1, the gradient intermediate layer 4 and the package tube shell 3 in which the diamond member 1 and the gradient intermediate layer 4 are embedded.

[0048] Embodiment 2

[0049] As shown in Figure 3 and Figure 4 The difference between the embodiment and embodiment 1 is that:

[0050] 1) further comprising elastic pre-tightening members 2; the elastic pre-tightening members 2 are used to fixedly connect the diamond member 1 and the gradient intermediate layer 4 on the package tube shell 3.

[0051] 2) the package tube shell 3 is provided with a heat dissipation hole at a heat dissipation position; the diamond member 1 extends into the heat dissipation hole.

[0052] 3) the gradient intermediate layer 4 is arranged between the diamond member 1 and the inner wall of the heat dissipation hole.

[0053] 4) the elastic pre-tightening members 2 are metal bellows rings, wave spring rings or micro round spring rings, and are made of stainless steel, nickel-based alloy or beryllium copper alloy.

[0054] 5) the contact pressure between the elastic pre-tightening members 2 and the diamond member 1 is 0.05 MPa to 10 MPa.

[0055] As shown in Figure 4 , the elastic pre-tightening members 2 are arranged on the vertical surface of the diamond member 1 and are staggered, so as to facilitate the smoothness of the heat dissipation channel; a stable preload is applied to the interface between the diamond member 1 and the package tube shell 3 during assembly or later use to compensate for thermal cycling and thermal expansion mismatch, so as to ensure that the package tube shell 3 tightly holds the diamond member 1. The elastic pre-tightening members 2 are metal bellows rings, wave spring rings or micro round spring rings, wherein the service life of the metal welded bellows can reach several years or even longer, and the reference service life of the wave spring ring can reach about 10,000 times; if the compression amount is reduced, the theoretical service life can be improved to 1,000,000 times; and the micro spring can work continuously for ten years or even longer; the material of the elastic pre-tightening members 2 is stainless steel, nickel-based alloy or beryllium copper alloy, and a contact pressure of 0.05 MPa to 10 MPa, preferably 0.1 MPa to 2 MPa, is applied to the interface between the diamond and the tube shell in the assembled state.

[0056] Example 3

[0057] like Figure 5 and Figure 6 As shown, the difference between this embodiment and Embodiment 2 is that:

[0058] 1) The gradient intermediate layer 4 further includes a top metal solder layer 7, which is disposed on the side of the active metal adhesive layer 6 away from the buffer layer 5;

[0059] 2) The gradient intermediate layer 4 also includes an active solder layer 8, which is disposed on the side of the top metal solder layer 7 away from the active metal bonding layer 6.

[0060] 3) The gradient intermediate layer 4 also includes a glass frit layer 9, which is disposed on the side of the active solder layer 8 away from the top metal solder layer 7.

[0061] Specifically, such as Figure 5 As shown, the gradient intermediate layer 4, from the diamond component 1 toward the encapsulation shell 3, sequentially includes a buffer layer 5, an active metal bonding layer 6, a top metal solder layer 7, an active solder layer 8, and a glass frit layer 9.

[0062] The glass frit layer 9 is formed by mixing raw materials such as quartz sand, feldspar, and borate in a specific ratio, melting them at high temperatures (usually exceeding 1000℃), and then rapidly cooling them. Its chemical composition is similar to ordinary glass, but due to differences in the melting and cooling processes, the frit has a finer crystal structure and more stable physical properties, providing insulation and sealing performance while meeting environmental protection requirements. The glass frit layer 9 can be replaced by a low-temperature molten glaze layer, composed of SiO2, B2O3, and Al2O3, which can also provide insulation and sealing performance.

[0063] The top metal solder layer 7 is Au, Ni, Cu or any combination thereof, with a thickness of 20 nm to 3 μm.

[0064] The active solder layer 8 is annular or strip-shaped, forming a heat-treated metallurgical bonding layer after brazing. The active solder contains at least one active element, such as titanium or zirconium, preferably a silver-copper-titanium alloy or a copper-titanium alloy, and the brazing temperature is between 600°C and 950°C, followed by cooling after a holding time of 10 to 60 minutes. Optionally, the solder is an Ag-based alloy (containing Cu and Ti, with a Ti content of 1–3 wt%); the active solder layer 8 has a cross-sectional thickness of approximately 200 μm. To improve wettability, the inner side of the encapsulation shell 3 is pre-plated with a 1 μm thick Ni or a 100 nm thick Au in the active solder layer 8 region.

[0065] Wherein, the glass frit layer 9 forms a continuous and dense hermetic sealing layer after heat treatment to improve the interface air tightness and structural support and improve the thermal expansion matching.

[0066] Embodiment 4

[0067] As shown in Figure 7 and Figure 8 , the difference between this embodiment and embodiment 3 is:

[0068] 1) The elastic pre-tightening member 2 is located in the axial position of the diamond member 1;

[0069] 2) The elastic pre-tightening member 2 includes a top connecting member and a spring part, and the top connecting member is fixedly connected with the heat-conducting elastic pad layer 10 arranged on the packaging tube shell 3, and the heat-conducting elastic pad layer 10 is arranged in a ring shape on the packaging tube shell 3;

[0070] The elastic pre-tightening member 2 includes a top connecting member and a spring part, and specifically, the top connecting member can be circular, square or other regular or irregular shapes for full or partial heat dissipation holes, as shown in Figure 7 , which is a circular full coverage, and the circular top connecting member is uniformly provided with ventilation holes; as shown in Figure 7 , the heat-conducting elastic pad layer 10 has four ring-shaped intervals arranged on the packaging tube shell 3, and the material is selected from silver-filled silica gel, carbon-filled elastic pad or heat-conducting phase change material (TIM), and the thickness is 20μm to 2mm.

[0071] As another embodiment of this embodiment, as shown in Figure 9 and Figure 10 , the diamond member 1 is in the shape of thin outside and thick inside, and since the force direction and gradient of the elastic pre-tightening member 2 to the outside of the packaging tube shell 3 and the self-weight direction of the gradient intermediate layer 4 are opposite, the gradient intermediate layer 4 forms a extrusion force perpendicular to the wall surface of the heat dissipation hole when it contacts the diamond member 1; the top of the diamond is connected with the top connecting member of the elastic pre-tightening member 2, and the top connecting member of the elastic pre-tightening member 2 is in a strip shape, which reduces the shielding area of the heat dissipation hole and is conducive to air convection heat dissipation.

[0072] In this embodiment, the glass frit layer 9 can be replaced by a low-temperature melting glaze layer.

[0073] This embodiment also discloses a specific preparation method for embedding a single crystal / multicrystal diamond member 1 (thickness 0.5mm, outer diameter according to packaging) through a metal tube shell center and maintaining the interface tightly under daily use conditions for a long time, and the steps are as follows:

[0074] A CVD polycrystalline diamond member 1 (thickness 1mm) and a copper alloy tube shell (as a packaging tube shell 3, thickness 1mm, inner diameter according to design) are used;

[0075] Next, the pre-treatment and the gradient interlayer 4 preparation are implemented;

[0076] The diamond component 1 is ultrasonically cleaned (acetone cleaning for 5 min, isopropanol cleaning for 5 min, deionized water DI flushing), and activated in O2 plasma for 10 min (power setting is 50 w, pressure setting is 0.2 mbar);

[0077] An Al2O3 film 20 nm (as a buffer layer 5) is deposited in an ALD system;

[0078] A Ti layer 50 nm (as an active metal bonding layer 6) is sputtered in a vacuum sputtering system, followed by sputtering of an Au layer 200 nm (as a top metal solder layer 7);

[0079] Then, the solder prepositioning and the package tube 3 preparation are implemented;

[0080] A preformed solder ring is embedded at the corresponding position on the inside of the tube, and the solder is an Ag-based alloy (containing Cu and Ti, and the Ti content is 1-3 wt%); the cross-sectional thickness of the solder ring is about 200 μm;

[0081] The inside of the tube is pre-plated with 1 μm thick Ni or 100 nm thick Au in the solder area to improve wettability;

[0082] Then, the assembly of the elastic pre-tightening structure is started;

[0083] The diamond component 1 is positioned at the stop position of the package tube 3, and the solder ring is aligned; a stainless steel corrugated spring ring (as an elastic pre-tightening component 2, the material is 301 stainless steel) is embedded on the outer periphery of the diamond component 1, and the free height and cross section are designed to provide a contact pressure of about 0.5 MPa after compression;

[0084] A 100 μm thick heat-conducting silicone pad filled with silver (as a heat-conducting elastic pad layer 10) is placed between the contact surface of the corrugated spring ring and the diamond component 1 to reduce the contact thermal resistance and protect the interface;

[0085] Then, soldering / heat treatment is implemented;

[0086] The assembly is placed in a vacuum furnace (evacuated to an air pressure <1×10 -3 Pa), or treated in a flowing high-purity argon atmosphere (O2 concentration <10 ppm); the temperature is raised to 800°C at a rate of 10°C / min, and held for 20 min, and then cooled to room temperature at a rate of 5°C / min. This process melts and wets the solder with the gradient interlayer 4, and the Ti element chemically reacts with the buffer layer / diamond at the interface to form a bonding layer;

[0087] The brazed sample is subjected to the following tests: shear strength test, thermal interface thermal resistance measurement, air tightness (He leakage rate), thermal cycle (temperature range from 40℃ to +125℃, 100 cycles), etc.

[0088] Performance test results: lap shear strength ≥10MPa; thermal interface thermal resistance ≤0.2K·cm 2 / w; He leakage rate ≤1×10 -8 mbar·L / s; lap shear strength retention after thermal cycle ≥80% of initial value; elastic preload member 2 preload retention ≥90% of initial preload.

[0089] Advantages of the present application:

[0090] The chemical / metallurgical bonding method is combined with the mechanical preload / elastic compensation structure, a gradient intermediate layer is designed to improve wetting and adhesion, a stable metallurgical joint is formed by active filler, and elastic preload and heat-conducting pad are supplemented to compensate thermal stress and maintain contact pressure, which is expected to improve interface reliability and thermal performance in many aspects at the same time, so as to meet the comprehensive requirements of high-power devices and severe working conditions on the packaging interface.

[0091] The above embodiment is only one of the implementation manners capable of realizing the technical scheme of the present application, and the scope of the present application is not limited to the above embodiment only, but also includes any changes, substitutions and other implementation manners easily thought of by those skilled in the art within the technical scope disclosed by the present application. Although the embodiments of the present application have been shown and described, it can be understood by those skilled in the art that various changes, modifications, substitutions and variations can be made to the embodiments without departing from the principles and spirit of the present application, and the scope of the present application is defined by the appended claims and their equivalents.

Claims

1. A device structure for connecting a diamond member with an encapsulation can, characterized by, The diamond component (1), the gradient intermediate layer (4), the elastic pre-tightening component (2) and the encapsulation tube shell (3) are included. The diamond component (1) is embedded in the shell of the encapsulation tube shell (3). The gradient intermediate layer (4) is arranged between the diamond component (1) and the encapsulation tube shell (3). The gradient intermediate layer (4) includes a buffer layer (5) and an active metal bonding layer (6) in sequence from the diamond component (1) to the encapsulation tube shell (3). The elastic pre-tightening component (2) is fixedly connected with the diamond component (1) and the shell of the encapsulation tube shell (3) respectively, and is used for realizing the fastening clamping between the diamond component (1), the gradient intermediate layer (4) and the encapsulation tube shell (3).

2. A device structure for connecting a diamond member to an encapsulation can, according to claim 1, characterized in that The elastic pre-tightening component (2) applies a radial or axial fastening force to the diamond component (1).

3. A device structure for connecting a diamond member to an encapsulation can, according to claim 1, characterized in that The encapsulation tube shell (3) is provided with a groove or a heat dissipation hole corresponding to a device mounting position, and the diamond component (1) extends into the groove or the heat dissipation hole.

4. A device structure for connecting a diamond member to an encapsulation can, according to claim 1, characterized in that, The gradient intermediate layer (4) further includes a top metal welding layer (7) arranged on the side of the active metal bonding layer (6) away from the buffer layer (5).

5. A device structure for connecting a diamond member to an encapsulation can, according to claim 4, characterized in that The gradient intermediate layer (4) further includes an active filler layer (8) arranged on the side of the top metal welding layer (7) away from the active metal bonding layer (6).

6. A device structure for connecting a diamond member to an encapsulation can, according to claim 4, characterized in that The gradient intermediate layer (4) further includes a glass frit layer (9) arranged on the side of the active filler layer (8) away from the top metal welding layer (7).

7. A device structure for connecting a diamond member to an encapsulation package according to claim 1, wherein The elastic pre-tightening component (2) is a metal corrugated ring, a wave spring ring or a micro circular ring spring, and is made of stainless steel, nickel-based alloy or beryllium copper alloy.

8. A device structure for connecting a diamond member to an encapsulation can, according to claim 7, characterized in that The contact pressure of the elastic pre-tightening component (2) and the diamond component (1) is between 0.05 MPa and 10 MPa.

9. A device structure for connecting a diamond member to an encapsulation can, according to claim 1, wherein, The buffer layer (5) is one or more of SiO2, Al2O3 and TiO2, and the thickness of the buffer layer (5) is 5 nm to 200 nm.

10. A device structure for connecting a diamond member to an encapsulation can, according to claim 1, wherein, The active metal bonding layer (6) is made of Ti, Zr or a Ti-containing alloy, and the thickness of the active metal bonding layer (6) is 5 nm to 500 nm.

Images