Broadband dual-polarization high-dynamic transmit-receive front-end SiP module

Abstract

The invention discloses a broadband dual-polarization high-dynamic transceiving front-end SiP module which comprises a power amplification and transceiving polarization control unit, an amplitude limiting unit, a receiving amplification blocking unit, a ceramic packaging substrate and a heat dissipation carrier. The power amplification and transmit-receive polarization control unit comprises a power amplifier, a transmit-receive switch and a polarization switch; the amplitude limiting unit can bear high-power signal input, limits the amplitude of an output signal under the condition of large signal input, and keeps a low insertion loss characteristic under the condition of normal small signal input; the receiving, amplifying and blocking unit is used for performing linear amplification and programmable attenuation on the amplitude of a received signal, selecting a reference state under the condition of normal small signal input, and selecting a blocking attenuation state under the condition of large signal input; the heat dissipation carrier is embedded in the ceramic packaging substrate and is used for shortening the heat dissipation path of the high-power device. According to the invention, the multi-mode and high-dynamic range of the transceiving front end can be realized, the heat dissipation efficiency of the module is improved, and broadband, miniaturized and high-power output is realized.

Description

TECHNICAL FIELD

[0001] The application belongs to the field of phased array radio frequency microsystem transceiver front end, and particularly relates to a wideband dual-polarized high-dynamic transceiver front end SiP module. BACKGROUND

[0002] The phased array system is widely applied to the fields of modern communication system, radar, seeker, etc. due to its rapid scanning, high gain, flexible beam pointing, strong anti-interference ability and other advantages. In recent years, the equipment such as radar and seeker develops towards the integration of detection, jamming, exploration and communication, various electronic devices and antennas work simultaneously and the distance between them changes constantly, so that the electromagnetic environment of the whole system is complex and changeable, which puts forward higher requirements on the frequency bandwidth, working mode and anti-interference ability of the phased array system. The wideband phased array can realize the functions of countermeasure, communication and detection at the same time, effectively solve the problems of target identification and multi-target resolution, and can significantly improve the anti-interference ability of the radar. As the core component of the phased array system, the existing transceiver front end is difficult to design compatibly in the indicators such as ultra-wideband, multi-function, integration, miniaturization and dynamic range, and at the same time, the problem of heat dissipation of high power under small package size needs to be solved. SUMMARY

[0003] The application aims to provide a wideband dual-polarized high-dynamic transceiver front end SiP module, which can realize multi-mode and high dynamic range of the transceiver front end, improve the module heat dissipation efficiency, and realize wideband, miniaturization and high power output.

[0004] In order to achieve the above-mentioned purpose, one aspect of the application provides a wideband dual-polarized high-dynamic transceiver front end SiP module, which comprises a power amplification and transceiver polarization control unit, an amplitude limiting unit, a receiving amplification blocking unit, a ceramic packaging substrate and a heat dissipation carrier. The power amplification and transceiver polarization control unit comprises a power amplifier, a transceiver switch and a polarization switch, the power amplifier is used for saturated amplification of the input transmission excitation signal, the transceiver switch is used for mode switching of the transmission mode and the receiving mode, and the polarization switch is used for selecting the polarization channel of the receiving and transmission link. The amplitude limiting unit is used for limiting the amplitude of the receiving signal output by the power amplification and transceiver polarization control unit, the amplitude limiting unit can withstand the input of high-power signal, limit the amplitude of the output signal in the case of high-power signal input, and maintain low insertion loss characteristics in the case of normal small signal input. The receiving amplification and blocking unit includes a first-stage low-noise amplifier, a blocking attenuator, and a second-stage low-noise amplifier connected in sequence. The first-stage low-noise amplifier is used to amplify the received signal output by the limiting unit with low noise. The blocking attenuator is used to programmatically attenuate the amplitude of the received signal, selecting the reference state under normal small signal input and the attenuation state under large signal input. The second-stage low-noise amplifier is used to compensate for the gain and noise of the received signal. The ceramic packaging substrate is used to integrate the power amplifier and transceiver polarization control unit, the limiting unit, and the receiving amplifier blocking unit. The heat sink is embedded in the ceramic packaging substrate. The heat sink adopts an irregular structure that is larger at the top and smaller at the bottom to shorten the heat dissipation path of high-power devices and improve thermal conductivity. The power amplifier and transceiver polarization control unit is attached to the heat sink.

[0005] According to the broadband dual-polarization high dynamic range transceiver front-end SiP module of the present invention described above, it is possible to realize multi-mode and high dynamic range of the transceiver front-end, while improving the heat dissipation efficiency of the module and realizing broadband, miniaturization and high power output. Attached Figure Description

[0006] To more clearly illustrate the technical solutions of the present invention, the accompanying drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort: Figure 1 This is a schematic diagram of the principle structure of a transceiver front-end SiP module according to an embodiment of the present invention; Figure 2 This is a schematic diagram of the surface layer of a ceramic packaging substrate according to an embodiment of the present invention; Figure 3 This is a cross-sectional view of a ceramic packaging substrate according to an embodiment of the present invention. Detailed Implementation

[0007] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this invention, and not all embodiments. Based on the embodiments of this invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this invention.

[0008] One embodiment of the present invention provides a broadband dual-polarization high dynamic range transceiver front-end SiP module, such as... Figures 1-3As shown, the broadband dual-polarization high dynamics transceiver front-end SiP module of this embodiment includes a power amplification and transceiver polarization control unit 5, a limiting unit 6, a receiving amplification blocking unit 7, a ceramic packaging substrate 1, and a heat dissipation carrier 2.

[0009] The power amplification and transceiver polarization control unit 5 is used to saturate amplify the input transmit excitation signal, switch between transmit and receive operating states, and select the transmit and receive polarization channels. The limiting unit 6 limits the received signal output from the power amplification and transceiver polarization control unit 5 to prevent high-power received signals from compressing the receive link to saturation or burning it out. The receive amplification blocking unit 7 is used to amplify the weak received RF signal output from the limiting unit with low noise, and also has a blocking attenuation function to ensure linear output of the receive circuit when a large signal is input, thus improving the system's receive dynamic range.

[0010] The ceramic packaging substrate 1 is formed by high-temperature sintering of a multilayer alumina ceramic substrate, comprising 6 dielectric layers and 7 metal layers. The dielectric layers 1, 2, 5, and 6 are 0.1 mm thick, while the dielectric layers 3 and 4 are 0.2 mm thick. The first metal layer serves as the device placement layer, the second metal layer as the ground shielding layer, the third, fifth, and sixth metal layers as the power and control transmission layers, the fourth metal layer as the RF stripline transmission layer, and the seventh metal layer as the device lead-out and soldering layer. The ceramic packaging substrate 1 integrates a heterogeneous heat sink. The top surface of the heat sink is flush with the first metal layer of the ceramic packaging substrate 1, the bottom surface is flush with the seventh metal layer, and the middle surface overlaps with the fourth metal layer. The heat sink and the ceramic packaging substrate 1 are integrally sintered using silver-copper soldering, which shortens the heat dissipation path for high-power devices and improves thermal conductivity.

[0011] Among them, such as Figure 1 As shown, the power amplification and transceiver polarization control unit 5 includes: a power amplifier A1 for saturating amplification of the input transmit excitation signal; a transceiver switch A2 for switching between the module's transmit and receive modes; and a polarization switch A3 for selecting the polarization channels of the receive and transmit links. Figure 1 In this embodiment, both the transceiver switch A2 and the polarization switch A3 are single-pole double-throw switches (SPDT).

[0012] In one embodiment, the power amplifier A1, transceiver switch A2, and polarization switch A3 are implemented on a single gallium nitride chip using an integrated process, achieving functional integration and miniaturization, improving performance consistency, and facilitating production and assembly.

[0013] like Figure 1As shown, the limiting unit is the limiter chip A4, which is used to limit the received signal. It can withstand high power input, and when a large signal is input, it limits the amplitude of the output signal to a low level. When a normal small signal is input, it maintains low insertion loss characteristics.

[0014] The receiving amplification blocking unit 7 includes: a first-stage low-noise amplifier A5, which is used to achieve low-noise amplification of the signal while having high P-1 input capability (1dB compression point input power); a blocking attenuator A6, which is used to programmatically attenuate the amplitude of the received signal; and a second-stage low-noise amplifier A7, which is used to compensate for the gain and noise of the received signal.

[0015] The receiving amplification blocking unit 7 is an amplification, attenuation, and amplification architecture. The performance parameters of the first-stage low-noise amplifier A5 and the second-stage low-noise amplifier A7 are different. The blocking attenuator A6 is a digitally controlled attenuator, which enables the module's receiving channel to have a blocking attenuation programmable function. When a normal small signal is input, the attenuation is in the reference state, and the channel works normally. When a large signal is input, the blocking is turned on and set to the attenuation state, so that the receiving link can still work normally when a large signal is input, significantly improving the dynamic range of the receiving channel.

[0016] In one embodiment, the first-stage low-noise amplifier A5, the blocking attenuator A6, and the second-stage low-noise amplifier A7 of the receiving amplification blocking unit 7 are implemented on a single gallium arsenide chip using an integrated process, achieving miniaturization and high integration.

[0017] Figure 1 and Figure 2 The transceiver front-end SiP module shown has two common ports TR1 and TR2, one receive output port Rout, and one transmit input port Tin. It can perform time-division dual-polarization output in transmit mode and time-division dual-polarization input in receive mode, realizing flexible and versatile working modes of the module.

[0018] like Figure 3 As shown, the ceramic packaging substrate 1 adopts a high-temperature co-fired multilayer ceramic process. The substrate has a total of 6 dielectric layers and 7 metal layers. The Kovar alloy frame 3 is welded to the multilayer ceramic packaging substrate 1 by silver-copper solder, and the cover plate 4 is parallelly sealed to the Kovar alloy frame 3.

[0019] The ceramic packaging substrate 1 integrates a heterogeneous heat dissipation carrier 2. The heat dissipation carrier 2 adopts an irregular structure with a larger top and a smaller bottom, and overlaps with the fourth layer of the ceramic packaging substrate 1. The heat dissipation carrier 2 and the ceramic packaging substrate 1 are embedded with silver-copper solder to ensure the heterogeneous integrated heat dissipation of the heat dissipation carrier 2 and the ceramic packaging substrate 1.

[0020] like Figure 3As shown, the high-power amplifier and transceiver polarization control unit 7 is attached to the heat dissipation carrier 2 with nano-silver conductive adhesive, which can efficiently conduct heat flow, shorten the heat dissipation path, and improve heat conduction efficiency. The limiting unit 6 and the receiving amplifier blocking unit 7 are attached to the ceramic packaging substrate 1 with H2OE conductive adhesive.

[0021] The bottom layer (7th metal layer) of the ceramic packaging substrate 1 serves as the packaging soldering and pin lead-out terminals, realizing the input and output of RF, power, and control signals. The top layer (1st metal layer) is the device placement layer, serving as the assembly layer for each functional unit and realizing the transmission of electrical signals. The ceramic packaging substrate 1 has four RF transmission ports TR1, TR2, Rout, and Tin. The transmit input port Tin has a "7-4 layer coaxial" - "4th layer stripline" - "4-1 layer coaxial" structure to realize the feeding of the transmit excitation signal. The receive output port Rout and the two common ports TR1 and TR2 adopt a "1-7 layer coaxial" structure to realize the transmission of RF signals from the top layer to the bottom layer. The remaining power and control pins are transmitted from the bottom layer to the respective placement and routing layers through vertical vias. The input terminal of the power amplifier A1 of the high-power amplification and transceiver polarization control unit 7 is connected to the top pad of the transmit input port Tin of the ceramic package substrate 1. The two sub-ports of the polarization switch A3 are connected to the top pads of the common ports TR1 and TR2, respectively. The receive output terminal of the transceiver switch A2 is connected to the input terminal of the limiting unit 6. The output terminal of the limiting unit 6 is connected to the input terminal of the first stage low-noise amplifier A5 of the receive amplification blocking unit 7. The second stage low-noise amplifier A7 of the receive amplification blocking unit 7 is connected to the top pad of the receive output port Rout of the ceramic package substrate 1.

[0022] The transceiver front-end SiP module of this embodiment may further include a driver and modulation chip 8, which processes externally input power and control signals to generate a high-voltage modulation signal, a low-voltage modulation signal, a gate voltage bias signal, a switch drive signal, and a blocking attenuation control signal. The high-voltage modulation signal and the gate voltage bias signal are input to the power amplifier A1, the low-voltage modulation signal is input to the first low-noise amplifier A5 and the second low-noise amplifier A7, the switch drive signal is input to the transceiver switch A2 and the polarization switch A3, and the blocking attenuation control signal is input to the blocking attenuator A6.

[0023] like Figure 2 and Figure 3 As shown, the power amplification and transceiver polarization control unit 5 is bonded to the heat dissipation carrier with nano silver paste, and the limiting unit 6, the receiving amplification blocking unit 7, and the driving and modulation chip 8 are bonded to the top layer (first metal layer) of the ceramic packaging substrate 1 with conductive adhesive, thereby realizing the integrated high-density integration of multiple functional units.

[0024] In transmit mode, the external transmit excitation signal is input from the bottom pin of the transmit input port Tin, and is input to the top pad of the transmit input port Tin of the ceramic package substrate 1 through the coaxial-strip-coaxial structure ("7-4 layer coaxial"-"4th layer stripline"-"4-1 layer coaxial" structure). The signal is connected to the input terminal of the power amplifier A1 through gold wire. After being amplified by the saturation power of the power amplifier A1, the transmit channel is selected by the transceiver switch A2, and then the polarization port is selected by the polarization switch A3. The two sub-ports of the transceiver switch A3 are connected to the top pads of the two common ports TR1 and TR2 of the ceramic package substrate 1 through gold wire bonding. The high-power transmit signal is transmitted directly from the top layer to the bottom pins of TR1 and TR2 through the "1-7 layer coaxial" structure on the ceramic package substrate 1. The driver and modulation chip 8 processes the externally input power and control signals to generate a high-voltage modulation signal, a gate voltage bias signal, and a switch drive signal. The high-voltage modulation signal and the gate voltage bias signal are input to the power amplifier A1, and the switch drive signal is input to the transceiver switch A2 and the polarization switch A3 to realize module transmission switching and polarization channel switching.

[0025] In normal receiving mode, the small received signal is input from the bottom pins of the two common ports TR1 and TR2. It is transmitted to the top pads of the two common ports through the "1-7 layer coaxial" structure. The received signal is connected to the two branch ports of polarization switch A3 through gold wire. After polarization input channel is selected by polarization switch A3, it is switched to the receiving channel by transceiver switch A2. The output of transceiver switch A2 is connected to limiter chip A4 through gold wire. After the limiting protection stage circuit, the output is sent to the first stage low noise amplifier A5. After low noise and high gain amplification, it is input to blocking attenuator A6. Blocking attenuator A6 operates in the reference state. After gain compensation by the second stage low noise amplifier A7, the output signal is amplified and output. The output signal is connected to the top pad of the receiving output port Rout through gold wire. Finally, it is transmitted from the top layer to the bottom pin of the receiving output port Rout through the "1-7 layer coaxial" structure. The driver and modulation chip 8 processes the externally input power and control signals to generate a low-voltage modulation signal, a switch drive signal, and a blocking attenuation control signal. The low-voltage modulation signal is input to the first low-noise amplifier A5 and the second low-noise amplifier A7, the blocking attenuation control signal is input to the blocking attenuator A6 to control the receiving channel to select the reference state, and the switch drive signal is input to the transceiver switch A2 and the polarization switch A3 to realize the module's receiving switching and polarization channel switching.

[0026] In the receive blocking attenuation mode, the received signal from the outside is input from the bottom pins of the two common ports TR1 and TR2, and transmitted through the "1-7 layer quasi-coaxial" structure to the top pads of the two common ports TR1 and TR2 of the ceramic package substrate 1. The received signal is connected to the two branch ports of polarization switch A3 through gold wires. After polarization input channel is selected by polarization switch A3, it is switched to the receive channel by transceiver switch A2. The output of transceiver switch A2 is connected to limiter chip A4 through gold wires. After the limiting protection stage circuit, the output is sent to the first stage low noise amplifier A5. After low noise and high gain amplification, it is input to blocking attenuator A6. Blocking attenuator A6 operates in attenuation mode, thereby attenuating the amplitude of the input signal and improving the dynamic range of the receiving link. The gain is then compensated by the second stage low noise amplifier A7 and amplified before output. The output signal is connected to the top pad of the receive output port Rout through gold wires, and finally transmitted from the top layer to the bottom pin of the receive output port Rout through the "1-7 layer quasi-coaxial" structure. The driver and modulation chip 8 processes the externally input power and control signals to generate a low-voltage modulation signal, a switch drive signal, and a blocking attenuation control signal. The low-voltage modulation signal is input to the first low-noise amplifier A5 and the second low-noise amplifier A7. The blocking attenuation control signal is input to the blocking attenuator A6 to control the receiving channel to select the attenuation state. The switch drive signal is input to the transceiver switch A2 and the polarization switch A3 to realize the module's receiving switching and polarization channel switching.

[0027] In summary, the transceiver front-end module of this invention has functions such as transmit / receive switching, power amplification, polarization switching, limiting, receive amplification, and blocking attenuation, enabling the module to have wide bandwidth and diverse operating modes. The high-power amplification, transmit / receive polarization control unit, limiting unit, and receive amplification blocking unit circuits are integrated into a single design, utilizing an HTCC packaging substrate for miniaturized packaging, thus improving the module's integration. A separate high-power amplification and receive link design is adopted, with the high-power amplifier bonded to a non-standard heat sink on a ceramic packaging substrate using nano-silver, shortening the heat dissipation path, improving thermal conductivity, and achieving high-power output. Furthermore, power expansion capabilities can be achieved by replacing heat sinks with different thermal conductivity and areas. The receive channel adopts an amplification-blocking attenuation-amplification circuit architecture, enabling the module to achieve multiple modes and a high dynamic range.

[0028] The broadband dual-polarization high-dynamic transceiver front-end SiP module of this invention solves the problems of large size, low integration, single working mode, small dynamic range, and narrow operating bandwidth of traditional transceiver front-end modules. It can output power of 10W in the X-Ku band with an efficiency of over 20%, a receiving gain of 23dB, a noise figure of 4dB, and polarization isolation of 25dB. The module package size is 10mm×7.5mm×2mm. It features diverse working modes, high dynamic range, broadband, miniaturization, and high power, and can meet the application requirements of broadband, multi-functional, and anti-jamming radar front-ends.

[0029] The foregoing has only described certain exemplary embodiments of the present invention by way of illustration. Undoubtedly, those skilled in the art can modify the described embodiments in various ways without departing from the spirit and scope of the present invention. Therefore, the foregoing drawings and descriptions are illustrative in nature and should not be construed as limiting the scope of protection of the claims of the present invention.

Claims

1. A broadband dual-polarization high-dynamic transceiver front-end SiP module, characterized in that, It includes a power amplification and transceiver polarization control unit, a limiting unit, a receiver amplification blocking unit, a ceramic packaging substrate, and a heat dissipation carrier; The power amplifier and transceiver polarization control unit includes a power amplifier, a transceiver switch, and a polarization switch. The power amplifier is used to saturate and amplify the input transmit excitation signal, the transceiver switch is used to switch between transmit and receive modes, and the polarization switch is used to select the polarization channel of the receive and transmit links. The limiting unit is used to limit the received signal output from the power amplifier and transceiver polarization control unit. The limiting unit can withstand high power signal input, limit the amplitude of the output signal under high power signal input, and maintain low insertion loss characteristics under normal small signal input. The receiving amplification and blocking unit includes a first-stage low-noise amplifier, a blocking attenuator, and a second-stage low-noise amplifier connected in sequence. The first-stage low-noise amplifier is used to amplify the received signal output by the limiting unit with low noise. The blocking attenuator is used to programmatically attenuate the amplitude of the received signal, selecting the reference state under normal small signal input and the attenuation state under large signal input. The second-stage low-noise amplifier is used to compensate for the gain and noise of the received signal. The ceramic packaging substrate is used to integrate the power amplifier and transceiver polarization control unit, the limiting unit, and the receiving amplifier blocking unit. The heat sink is embedded in the ceramic packaging substrate. The heat sink adopts an irregular structure that is larger at the top and smaller at the bottom to shorten the heat dissipation path of high-power devices and improve thermal conductivity. The power amplifier and transceiver polarization control unit is attached to the heat sink.

2. The broadband dual-polarization high dynamic range transceiver front-end SiP module according to claim 1, characterized in that, The ceramic packaging substrate includes 6 dielectric layers and 7 metal layers. The first metal layer serves as the device layout layer, the second metal layer serves as the ground shielding layer, the third, fifth, and sixth metal layers serve as power and control signal transmission layers, the fourth metal layer serves as the radio frequency stripline transmission layer, and the seventh metal layer serves as the device pin lead-out and soldering layer.

3. The broadband dual-polarization high dynamic range transceiver front-end SiP module according to claim 2, characterized in that, The limiting unit and the receiving amplification blocking unit are bonded to the first metal layer with conductive adhesive. The top surface of the heat dissipation carrier is flush with the first metal layer, the bottom surface is flush with the seventh metal layer, and the middle surface overlaps with the fourth metal layer.

4. The broadband dual-polarization high dynamic range transceiver front-end SiP module according to any one of claims 1-3, characterized in that, The ceramic packaging substrate has two common ports, one receive output port and one transmit input port; The transmit input port is a coaxial-strip-coaxial structure from the bottom to the top, used to feed in the transmit excitation signal; the receive output port and two common ports are a coaxial structure from the top to the bottom, used to transmit radio frequency signals from the top to the bottom. The input terminal of the power amplifier is connected to the top pad of the transmit input port. The two branch ports of the polarization switch are connected to the top pads of the two common ports respectively. The receive output terminal of the transceiver switch is connected to the input terminal of the limiting unit. The output terminal of the limiting unit is connected to the input terminal of the first-stage low-noise amplifier. The second-stage low-noise amplifier is connected to the top pad of the receive output port. The two separate ports of the polarization switch are connected to the top pads of the two common ports. High-power signals are transmitted from the bottom pins of the two common ports, and signals are received from the bottom pins of the two common ports. Transmission and reception are time-division multiplexed.

5. The broadband dual-polarization high dynamic range transceiver front-end SiP module according to any one of claims 1-3, characterized in that, The power amplifier, transceiver switch, and polarization switch of the power amplifier and transceiver polarization control unit are implemented on a single gallium nitride chip using integrated technology. The first-stage low-noise amplifier, blocking attenuator, and second-stage low-noise amplifier of the receiving amplification blocking unit are implemented on a single gallium arsenide chip using integrated technology.

6. The broadband dual-polarization high dynamic range transceiver front-end SiP module according to any one of claims 1-3, characterized in that, It also includes a Kovar alloy frame and a cover plate. The Kovar alloy frame is welded to the multilayer ceramic substrate by silver-copper solder, and the cover plate is sealed to the frame in parallel.

7. The broadband dual-polarization high dynamic range transceiver front-end SiP module according to any one of claims 1-3, characterized in that, The heat sink is embedded in the ceramic packaging substrate by silver-copper soldering, and the power amplification and transceiver polarization control unit is attached to the heat sink by nano-silver conductive adhesive.

8. The broadband dual-polarization high dynamic range transceiver front-end SiP module according to any one of claims 1-3, characterized in that, It also includes a driver and modulation chip, which is bonded to a ceramic package substrate with conductive adhesive. It is used to process externally input power and control signals to generate a high-voltage modulation signal, a low-voltage modulation signal, a gate voltage bias signal, a switch drive signal, and a blocking attenuation control signal. The high-voltage modulation signal and the gate voltage bias signal are input to the power amplifier, the low-voltage modulation signal is input to the first low-noise amplifier and the second low-noise amplifier, the switch drive signal is input to the transceiver switch and the polarization switch, and the blocking attenuation control signal is input to the blocking attenuator.

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