Quantitative analysis method for migration characteristics of indium component in epitaxial wafer

By quantitatively analyzing the migration characteristics of indium components in epitaxial wafers and combining multiple characterization techniques, the laser defect problem caused by indium atom migration was solved, thereby improving the performance and reliability of the laser.

CN121541015AActive Publication Date: 2026-02-17CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI +1
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Patent Information

Application Number
CN202511426307.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2025-09-30
Publication Date
2026-02-17
Estimated Expiration
2045-09-30

AI Technical Summary

Technical Problem

The high reactivity and mobility of indium atoms cause semiconductor lasers to experience current or voltage overload, thermal overload, and other phenomena after long-term operation, resulting in defects that affect device lifespan and performance. Existing technologies have not been able to effectively study the migration process and defect formation.

Method used

A quantitative analysis method for the migration characteristics of indium components in epitaxial wafers is provided, including non-destructive and destructive structural characterization, combined with techniques such as high-resolution X-ray diffraction, photoluminescence, cathodoluminescence, time-resolved photoluminescence spectroscopy, transmission electron microscopy, and secondary ion mass spectrometry, to quantitatively analyze the impact of indium component migration on laser performance.

Benefits of technology

This study enabled a detailed investigation into the microstructural changes and carrier dynamics of indium composition migration within the laser, providing optimization suggestions for device structure design and epitaxial growth conditions, thereby improving the performance and reliability of the laser.

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Abstract

The invention belongs to the technical field of reliability analysis of devices, and particularly relates to a quantitative analysis method for migration characteristics of an indium component in an epitaxial wafer. Comprising the following steps: providing epitaxial wafers with consistent initial characteristics, and carrying out uniform cleavage; taking one small block as a reference sample, and performing external disturbance treatment on other small blocks; the method comprises the following steps: respectively carrying out non-destructive structure characterization treatment on a reference sample and a sample subjected to external disturbance treatment, including high-resolution X-ray diffraction test, photoluminescence and cathode fluorescence combined test and time-resolved photoluminescence spectrum measurement; comprising high-resolution transmission electron microscope and EDS energy spectrum combined imaging and secondary ion mass spectrum; finally, FP lasers are prepared respectively, and electrical characterization processing is carried out. And quantitatively analyzing the influence of indium component migration on the electrical properties of the FP laser according to the result. The method has the advantages that the migration of indium atoms is analyzed according to a method for changing the microstructure in the quantum well and changing the dynamic behavior of a carrier.
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