Heterogeneous multichannel T / R assembly and phased array antenna

Abstract

The invention provides a heterogeneous multichannel T / R assembly and a phased array antenna, the T / R assembly comprises a microwave plate, the microwave plate is provided with a radio frequency link and a control circuit, the radio frequency link comprises a plurality of radio frequency transmit-receive channels, and the radio frequency link adopts a heterogeneous integrated architecture and comprises a silicon-based multifunctional chip and at least one gallium arsenide transmit-receive chip, a digital control circuit and a plurality of radio frequency transceiving channels are integrated in the silicon-based multifunctional chip, and each radio frequency transceiving channel is at least integrated with a numerical control attenuator, a numerical control phase shifter and a driving amplifier; the gallium arsenide transceiver chip is integrated with a power amplifier and a low noise amplifier corresponding to the radio frequency transceiver channel; wherein the radio frequency output end of the silicon-based multifunctional chip is connected with the radio frequency input end of the gallium arsenide transceiving chip, and the digital control circuit of the silicon-based multifunctional chip receives a control instruction and is used for performing transceiving switching, phase shifting, attenuation and amplification state control on a plurality of radio frequency transceiving channels. According to the invention, the assembly size is obviously reduced, and the cost is reduced.

Description

Technical Field

[0001] This invention relates to the field of phased array antenna technology, and in particular to a heterogeneous multi-channel T / R assembly and a phased array antenna. Background Technology

[0002] Each element of a typical active phased array antenna is connected to a T / R module. As phased arrays are used more widely on various platforms, T / R modules are becoming smaller and lighter, and the functions they need to perform are becoming more complex. Although T / R modules vary slightly depending on the system performance requirements, their overall structure is quite similar.

[0003] Each T / R module includes independent transmit and receive channels as well as a shared phase shifter. The T / R module is connected to both transmit and receive power supply networks. The transmit channel includes a power amplifier circuit, and the receive channel includes a low-noise amplifier circuit and a power limiting protection circuit. The shared components of the T / R module's transmit and receive channels mainly include a circulator, transceiver switch, and phase shifter. The power supply section includes power conversion, and beam control includes command reception, computation, logic output, drive, and detection feedback.

[0004] The T / R assembly determines the size and cost of the phased array antenna. Traditional hybrid integrated assemblies, with their numerous discrete components, increase assembly difficulty and result in excessive size. They are no longer suitable for the requirement of miniaturized T / R assemblies.

[0005] To reduce the size of transceiver (T / R) modules, CN112114290A proposes a miniaturized X-band four-channel T / R module. This module uses an LTCC (Low-Temperature Ceramic) circuit board, improving integration. However, the multi-functional chip it uses has limited integration capabilities, integrating a transceiver switch, a digitally controlled attenuator, and a digitally controlled phase shifter, and it only has one channel. While using an LTCC board increases the number of circuit board layers, it still contains a large number of discrete components. Furthermore, the multi-functional chip lacks integrated digital circuitry, requiring a serial-to-parallel converter chip for each channel, increasing cost to some extent. Moreover, LTCC technology itself is relatively expensive, limiting its application possibilities.

[0006] Furthermore, when amplitude and phase control and single-channel switching are required for phased arrays, each channel needs a serial-to-parallel converter chip. This design increases component size and cost. Currently, two solutions are adopted: Firstly, there's parallel control. For four-channel components, the advantage of parallel control is shorter coding time, but it increases the number of control connector pins. Currently, the 422 differential control method is commonly used, which further increases the number of differential chips required.

[0007] Secondly, there is serial control, where four channels use one serial data stream. This control method increases coding time and beam scanning time.

[0008] Both control methods require a serial-to-parallel converter chip for each channel, which increases the component size and cost.

[0009] In summary, existing T / R components have the following problems: a. Existing T / R components consist of multiple devices in the RF link, such as power amplifiers, driver amplifiers, digitally controlled phase shifters, and digitally controlled attenuators. The large number of discrete components in the link results in a large component size, which is difficult to assemble and has a high cost.

[0010] b. Existing T / R modules with phase shift attenuation function require a serial-to-parallel converter chip for each channel. The extensive use of serial-to-parallel converter chips in multi-channel modules will increase module cost and size. Summary of the Invention

[0011] The technical problem to be solved by this invention is how to reduce the size and cost of T / R components. This invention proposes a heterogeneous multi-channel T / R component and a phased array antenna.

[0012] According to an embodiment of the present invention, a heterogeneous multi-channel T / R component includes: a microwave board, wherein the microwave board is provided with a radio frequency link and a control circuit, the radio frequency link includes multiple radio frequency transceiver channels, and the radio frequency link adopts a heterogeneous integrated architecture, including: The silicon-based multifunctional chip integrates digital control circuitry and multiple radio frequency transceiver channels, each of which integrates at least a digitally controlled attenuator, a digitally controlled phase shifter, and a driver amplifier. At least one gallium arsenide transceiver chip, which integrates a power amplifier and a low-noise amplifier corresponding to the radio frequency transceiver channel; The RF output terminal of the silicon-based multifunctional chip is connected to the RF input terminal of the gallium arsenide transceiver chip. The digital control circuit of the silicon-based multifunctional chip receives control commands to control the transmit / receive switching, phase shifting, attenuation, and amplification states of the multiple RF transceiver channels.

[0013] According to some embodiments of the present invention, the control circuit includes a serial-to-parallel converter chip, the serial-to-parallel converter chip being configured as follows: Receive one serial control signal; The first part of the data in the serial control signal is converted into a parallel signal to control the transmit / receive switching of the gallium arsenide transceiver chip. The second part of the data in the serial control signal is output serially to the digital control circuit of the silicon-based multifunctional chip to control the phase shift and attenuation of multiple channels.

[0014] In some embodiments of the present invention, the control circuit further includes a logic gate circuit, wherein the first input terminal of the logic gate circuit is connected to the parallel output terminal of the serial-to-parallel converter chip, the second input terminal is connected to the silicon-based multifunctional chip, and receives the transmit / receive enable signal generated by the silicon-based multifunctional chip. The output of the logic gate circuit is connected to the transmit / receive control terminal of the gallium arsenide transceiver chip to generate the final transmit / receive switching control signal to prevent the transmit / receive channel from being accidentally opened.

[0015] According to some embodiments of the present invention, there are four radio frequency transceiver channels, the serial control signal is n bits, and the serial-to-parallel converter chip always maintains 8 bits of parallel data. When all n bits of data are shifted in, a latch signal triggers the silicon-based multifunctional chip to perform phase shift and attenuation control, and triggers the serial-to-parallel converter chip to output the parallel control signal.

[0016] In some embodiments of the present invention, the T / R component is used in the X-band, and a matching stub optimized for heterogeneous integration is provided on the radio frequency signal transmission path between the silicon-based multifunctional chip and the gallium arsenide transceiver chip. The matching stub is configured to optimize the VSWR of the T / R component in the operating frequency band to no more than 1.5.

[0017] According to some embodiments of the present invention, the silicon-based multifunctional chip is fabricated using a 28nm CMOS process.

[0018] In some embodiments of the present invention, the numerically controlled phase shifter integrated inside the silicon-based multifunctional chip is 6-bit, and the numerically controlled attenuator is 6-bit.

[0019] According to some embodiments of the present invention, the microwave board is a multilayer hybrid plate, and the silicon-based multifunctional chip and the gallium arsenide transceiver chip are assembled on the microwave board in bare chip form by a sintering process and interconnected by gold wire bonding.

[0020] In some embodiments of the present invention, the T / R assembly further includes: a housing, an upper cover plate and an inner cover plate. The T / R assembly has an overall flat cuboid structure, and the circulators and circuits corresponding to the multiple radio frequency transceiver channels are arranged in a one-dimensional linear arrangement on the microwave board.

[0021] The phased array antenna according to an embodiment of the present invention includes a plurality of heterogeneous four-channel X-band T / R components as described above.

[0022] The present invention has the following beneficial effects: The heterogeneous integrated T / R component of this invention reduces link complexity, shrinks component size, and lowers component cost by using heterogeneous integrated chips. The control circuit of the component employs a control method that reduces the number of serial-to-parallel converter chips used in multi-channel components, further reducing component size and cost. The use of AND gates also reduces power-on errors caused by bit errors. Attached Figure Description

[0023] Figure 1 This is a schematic diagram illustrating the working principle of a heterogeneous multichannel T / R component according to an embodiment of the present invention. Figure 2 This is a schematic diagram of the channel amplitude and phase control principle of a heterogeneous multi-channel T / R module according to an embodiment of the present invention; Figure 3 This is a structural diagram of a heterogeneous multichannel T / R assembly according to an embodiment of the present invention; Figure 4 This is a microwave board structure diagram of a heterogeneous multichannel T / R assembly according to an embodiment of the present invention.

[0024] Figure label: DC-DC power supply chip 1, serial-to-parallel converter chip 2, silicon-based multi-functional chip 3, gallium arsenide transceiver chip 4, matching stub 5, AND gate chip 6, negative voltage protection chip 7, gate voltage modulation chip 8, circulator 9, microwave board 10, top cover plate 11, inner cover plate 12, housing 13. Detailed Implementation

[0025] To further illustrate the technical means and effects of the present invention in achieving its intended purpose, the present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments.

[0026] The steps described in the specification and the flowcharts in the accompanying drawings of this invention are not necessarily to be strictly followed according to the step numbers; the execution order of the steps can be changed. Furthermore, certain steps can be omitted, multiple steps can be combined into one step, and / or one step can be broken down into multiple steps.

[0027] This invention designs a heterogeneous T / R module. The amplitude and phase control of the T / R module uses a highly integrated silicon-based multifunctional chip 3. This chip uses a mature 28nm CMOS process to integrate digital circuits, RF front-end, power amplifier and other functions into a single chip.

[0028] like Figures 1-4 As shown, the heterogeneous multi-channel T / R component according to an embodiment of the present invention includes: a microwave board 10, on which a radio frequency link and a control circuit are provided. The radio frequency link includes multiple radio frequency transceiver channels. The radio frequency link adopts a heterogeneous integrated architecture, including: a silicon-based multi-functional chip 3 and at least one gallium arsenide transceiver chip 4.

[0029] Among them, the silicon-based multi-functional chip 3 integrates digital control circuits and multiple radio frequency transceiver channels. Each radio frequency transceiver channel integrates at least a digitally controlled attenuator, a digitally controlled phase shifter, and a driver amplifier. The gallium arsenide transceiver chip 4 integrates a power amplifier and a low-noise amplifier corresponding to the radio frequency transceiver channel.

[0030] The RF output terminal of the silicon-based multi-function chip 3 is connected to the RF input terminal of the gallium arsenide transceiver chip 4. The digital control circuit of the silicon-based multi-function chip 3 receives control commands and is used to control the transmission and reception switching, phase shifting, attenuation and amplification states of multiple RF transceiver channels.

[0031] It should be noted that, to achieve higher transmit power and receive gain, this invention utilizes a gallium arsenide transceiver chip 4, which integrates a power amplifier chip for the transmit channel and a low-noise amplifier chip for the receive channel. This solves the problem of complex component links and reduces component size. Furthermore, compared to gallium arsenide chips, silicon has three times the thermal conductivity, resulting in superior heat dissipation performance.

[0032] The heterogeneous multi-channel T / R component according to embodiments of the present invention heterogeneously integrates the respective advantages of a silicon-based multifunctional chip 3 and a gallium arsenide transceiver chip 4, effectively solving the problems of link complexity and size. Chip control adopts an SPI communication interface, and the digital control circuit in the chip controls the chip's transmit / receive, phase shift, attenuation, and amplification states.

[0033] According to some embodiments of the present invention, the control circuit includes a serial-to-parallel converter chip 2, which is configured as follows: Receive one serial control signal; The first part of the serial control signal is converted into a parallel signal to control the transmit / receive switching of the gallium arsenide transceiver chip 4. The second part of the serial control signal is output serially to the digital control circuit of the silicon-based multi-function chip 3 to control the phase shift and attenuation of multiple RF transceiver channels.

[0034] It should be noted that the present invention uses a serial-to-parallel converter chip 2 with serial output function, combined with the digital circuit in the silicon-based multi-functional chip 3, to reduce the number of serial-to-parallel converter chips 2 used in the multi-channel T / R component from multiple to one, which greatly reduces the size of the T / R component and lowers the cost.

[0035] In some embodiments of the present invention, the control circuit further includes a logic gate circuit, the first input terminal of which is connected to the parallel output terminal of the serial-to-parallel converter chip 2, and the second input terminal is connected to the silicon-based multifunctional chip 3, and receives the transmit / receive enable signal generated by the silicon-based multifunctional chip 3.

[0036] The output of the logic gate circuit is connected to the transmit / receive control terminal of the gallium arsenide transceiver chip 4 to generate the final transmit / receive switching control signal, preventing accidental activation of the transmit / receive channel. This improves the reliability of the T / R component's transmit / receive control. Figure 2 and Figure 4 As shown, the logic gate circuit can use an AND gate chip 6. According to some embodiments of the present invention, there are four radio frequency transceiver channels, the serial control signal is n bits, the serial-to-parallel chip 2 always maintains 8 bits of parallel data, and when all n bits of data are shifted in, a latch signal triggers the silicon-based multi-functional chip 3 to perform phase shift and attenuation control, and triggers the serial-to-parallel chip 2 to output the parallel control signal.

[0037] It should be noted that this invention does not employ the "broadcast-addressing" method of setting a control chip for each channel in the prior art, but instead adopts a "data stream pipeline-allocation" method, and utilizes the special functions of two types of chips: A special "serial-to-parallel chip 2" not only converts serial data into parallel data, but also has a "serial output" pin. This pin allows unlatched data in the chip's internal shift register to continue passing forward, acting like a data pipeline.

[0038] A highly integrated "silicon-based multi-functional chip 3": This chip not only contains radio frequency circuits, but also integrates digital control circuits, which can directly receive and understand serial commands.

[0039] Taking a four-RF transceiver channel as an example, the serial-to-parallel converter chip 2 in this invention operates as follows: a) Data input: The main control computer sends a long string of serial data (assuming it is n bits) containing all control information into the only serial-to-parallel converter chip 2 in the T / R component.

[0040] b) Data offloading: Path A (GaAs transceiver chip 4): Serial-to-parallel chip 2 latches the last 8 bits of data in the serial data stream (used to control simple instructions such as transmit and receive switches) internally and converts them into parallel output.

[0041] Path B (to silicon-based multifunction chip 3): Meanwhile, serial-to-parallel chip 2 continues to transmit the preceding (n-8) bits of data (used to control the fine phase shift and attenuation of the four channels) in the data stream to the subsequent silicon-based multifunction chip 3 through its "serial output" pin.

[0042] c) Signal execution: Amplitude and phase control: The digital circuit inside the silicon-based multi-function chip 3 directly receives the (n-8) bits of serial data, decodes it, and then independently sets the phase shifters and attenuators of the four internal RF transceiver channels.

[0043] Transceiver control: The 8-bit signal output in parallel by the serial-to-parallel converter chip 2 and the transmit / receive enable signal generated by the silicon-based multi-functional chip 3 are logically verified by an AND gate to generate a final reliable transmit / receive switching signal, which controls the gallium arsenide transceiver chip 4.

[0044] d) Synchronous latch: After all n bits of data have been shifted in, a latch signal simultaneously triggers the serial-to-parallel converter chip 2 and the silicon-based multi-function chip 3, so that all control changes take effect at the same time.

[0045] In some embodiments of the present invention, the T / R component is used in the X-band, such as... Figure 1 As shown, a matching stub 5 optimized for heterogeneous integration is provided on the radio frequency signal transmission path between the silicon-based multifunctional chip 3 and the gallium arsenide transceiver chip 4. The matching stub 5 is configured to optimize the VSWR of the T / R component in the operating frequency band to no more than 1.5.

[0046] According to some embodiments of the present invention, the silicon-based multifunctional chip 3 is fabricated using a 28nm CMOS process.

[0047] In some embodiments of the present invention, the silicon-based multifunctional chip 3 integrates a 6-bit digitally controlled phase shifter and a 6-bit digitally controlled attenuator. For example, the silicon-based multifunctional chip 3 can integrate four radio frequency transceiver channels, each receiving channel integrating a 6-bit phase shifter and a 6-bit attenuator, and each transmitting channel integrating a 6-bit phase shifter.

[0048] According to some embodiments of the present invention, the microwave board 10 is a multilayer hybrid platen, and the silicon-based multifunctional chip 3 and the gallium arsenide transceiver chip 4 are assembled on the microwave board 10 in the form of bare chips through a sintering process and interconnected by gold wire bonding.

[0049] In some embodiments of the present invention, the T / R assembly further includes a housing 13, an upper cover plate 11, and an inner cover plate 12. The T / R assembly has an overall flat cuboid structure, and the circulators 9 and circuits corresponding to multiple RF transceiver channels are arranged in a one-dimensional linear fashion on the microwave board 10. For example, when there are four RF transceiver channels, a 1×4 structure can be used. On the microwave board 10, the circuits designed for channels 1, 2, 3, and 4 (including chip placement positions, transmission lines, matching circuits, etc.) can be arranged one after another side by side in a straight line.

[0050] According to an embodiment of the present invention, the phased array antenna includes a plurality of heterogeneous four-channel X-band T / R components as described above.

[0051] The present invention will now be described in detail with reference to the accompanying drawings and a specific embodiment. It should be understood that the following description is merely exemplary and should not be construed as a specific limitation of the present invention.

[0052] like Figure 1 As shown, the heterogeneous T / R component proposed in this invention includes four radio frequency transceiver channels, including a receiving channel and a transmitting channel, as well as functional circuits such as a silicon-based multifunctional chip 3, a gallium arsenide transceiver chip 4, negative voltage protection, and power modulation.

[0053] Among them, the silicon-based multi-functional chip 3 mainly integrates functions such as radio frequency signal attenuation, phase shifting, one-to-four power splitting, channel selection, and radio frequency signal amplification.

[0054] The serial-to-parallel converter chip 2 can not only output TTL signals in parallel to realize the transmit / receive control function of the gallium arsenide transceiver chip 4, but also, due to its serial signal output capability, its output serial signal enters the silicon-based multi-functional chip 3 to realize the attenuation, phase shift, and channel selection functions of the RF signal. The entire component RF link only requires five chips to meet the link design of a four-channel T / R component.

[0055] The silicon-based multi-functional chip 3 features extremely high integration, with four transceiver channels on a single chip. It integrates a 1-to-4 power divider, a 6-digit digitally controlled attenuator, a 6-digit digitally controlled phase shifter, a first-stage driver amplifier, a second-stage driver amplifier, and a final-stage power amplifier. The heterogeneous four-channel T / R module has five RF interfaces and one control power interface.

[0056] Furthermore, standing wave ratio (SWR) is an important indicator of the matching characteristics of a transceiver module (T / R). Poor SWR can reduce the module's transmit efficiency and receive sensitivity. In this invention, because the module has a wide operating bandwidth and uses heterogeneous integration of silicon and gallium arsenide, the SWR of its radio frequency signal was simulated and optimized. The simulation results are as follows: Figure 1 Matching stub 5 has a better standing wave ratio (SWR). Without matching stub 5, the SWR of the component is 1.8, and with matching stub 5, the SWR of the component is about 1.5.

[0057] Figure 2 This is a schematic diagram of the phase and amplitude control principle of a T / R module channel. The control port of this T / R module uses a single serial codeword to control the phase shift, attenuation, and channel selection of the module. When the serial codeword enters the T / R module, it first enters the serial-to-parallel converter chip 2. The serial codeword has n bits, with the control bits being high-first-in. After passing through the serial-to-parallel converter chip 2, it sequentially enters the silicon-based multifunction chip 3. The serial-to-parallel converter chip 2 always reserves 8 data bits. When all n bits of data have entered, since both the serial-to-parallel converter chip 2 and the silicon-based multifunction chip 3 have data latches that are active low-bit, the latch signal is pulled low. The silicon-based multifunction chip 3 then performs phase shift and attenuation control, while the serial-to-parallel converter chip 2 outputs the stored 8 bits of data in parallel.

[0058] To avoid the simultaneous opening of the transmit and receive channels due to errors or other reasons, this invention adds an AND gate chip 6 to the control link. The AND gate chip 6 performs a phase AND operation on the transmit and receive control signals T0 and R0 of the silicon-based multifunctional chip 3 with the 8-bit data output in parallel from the serial-to-parallel chip 2, and then outputs a control signal T / R. This signal is used to control the transmit and receive of the gallium arsenide transceiver chip 4.

[0059] The heterogeneous four-channel T / R module adopts a flat structure design, with the four T / R channels arranged in a 1×4 configuration. Figure 3 As shown. The component consists of an upper cover plate 11, an inner cover plate 12, a multi-layer microwave plate 10, and a box body 13.

[0060] like Figure 4 As shown, microwave board 10 is a microwave multilayer hybrid board, which contains four gallium arsenide transceiver chips 4, one silicon-based multifunctional chip 3, one negative voltage protection chip 7, four gate voltage modulation chips 8, and two AND gate chips. There are two DC-DC power supply chips 1.

[0061] To improve the integration of the components, all major components use bare chips. The assembly process of the entire heterogeneous four-channel T / R module is as follows: The first step is to sinter the microwave board 10 inside the housing 13. The microwave board 10 and the component housing 13 are tightly fitted. A pressure block is needed during sintering to prevent the printed circuit board from shifting during assembly inside the housing 13. At the same time as sintering the printed circuit board, the RF connector and the micro rectangular connector are sintered onto the component housing. The second step is to assemble the bare chip devices.

[0062] The third step is to assemble the circulator 9, which is then glued to the component housing.

[0063] The fourth step is to connect all the bare chips and the circulator pin 9 using gold wire bonding.

[0064] Step 5: Install the inner cover plate 12 using screws.

[0065] Step 6: Laser sealing of the outer cover plate.

[0066] In summary, this invention utilizes a combination of a silicon-based multifunctional chip 3 and a gallium arsenide transceiver chip 4, which achieves extremely high integration, reduces component size, simplifies the assembly process, and lowers component costs. Furthermore, simulations were performed to obtain a low VSWR matching stub 5 during heterogeneous chip integration.

[0067] The present invention discloses a channel control method for a T / R module. A serial-to-parallel converter chip 2 with serial output function is used in the front stage of the silicon-based multifunctional chip 3. This chip, combined with the transmit / receive control signals of the silicon-based multifunctional chip 3, improves the control accuracy of the module channel while reducing the number of serial-to-parallel converter chips 2 required, thus lowering the module cost and reducing the module size.

[0068] The present invention has the following beneficial effects: 1. The X-band heterogeneous integrated T / R module reduces link complexity, module size, and cost by using heterogeneous integrated chips. 2. In the control circuit, the control method adopted by the module reduces the number of serial-to-parallel converter chips 2 used in the multi-channel module, reducing the module size and cost. The use of AND gates reduces power-on errors caused by bit errors. 3. Simulations yielded the low VSWR matching stub 5 when using heterogeneous chip integration.

[0069] Through the description of specific embodiments, a more in-depth and specific understanding should be gained of the technical means and effects adopted by the present invention to achieve the intended purpose. However, the accompanying drawings are only provided for reference and illustration and are not intended to limit the present invention.

Claims

1. A heterogeneous multi-channel T / R assembly, characterized by, The T / R assembly comprises a microwave board, a radio frequency link and a control circuit, the radio frequency link comprises a plurality of radio frequency transceiver channels, the radio frequency link adopts a heterogeneous integrated architecture, and the radio frequency link comprises: a multifunctional silicon chip internally integrated with a digital control circuit and a plurality of radio frequency transceiver channels, each radio frequency transceiver channel is at least integrated with a digital controlled attenuator, a digital controlled phase shifter and a driver amplifier; at least one gallium arsenide transceiver chip integrated with a power amplifier and a low noise amplifier corresponding to the radio frequency transceiver channel; wherein the radio frequency output end of the multifunctional silicon chip is connected with the radio frequency input end of the gallium arsenide transceiver chip, and the digital control circuit of the multifunctional silicon chip receives a control instruction for controlling the radio frequency transceiver channel in the state of transceiving switching, phase shifting, attenuating and amplifying. The control circuit comprises a serial-to-parallel chip, and the serial-to-parallel chip is configured to:

2. The heteroform multi-channel T / R assembly of claim 1, wherein, receive a serial control signal; convert a first part of data in the serial control signal into a parallel signal for controlling the transceiving switching of the gallium arsenide transceiver chip; convert a second part of data in the serial control signal into a serial form and output to the digital control circuit of the multifunctional silicon chip for controlling the phase shifting and attenuating of the radio frequency transceiver channel. The control circuit further comprises a logic gate circuit, a first input end of the logic gate circuit is connected to a parallel output end of the serial-to-parallel chip, a second input end of the logic gate circuit is connected to the multifunctional silicon chip and receives a transceiving enable signal generated by the multifunctional silicon chip; 3. The heteroform multi-channel T / R assembly of claim 2, wherein, an output end of the logic gate circuit is connected to a transceiving control end of the gallium arsenide transceiver chip for generating a final transceiving switching control signal to prevent the radio frequency transceiver channel from being mistakenly opened. The radio frequency transceiver channel is four, the serial control signal is n bits, the serial-to-parallel chip always maintains 8-bit parallel data inside, and when all n-bit data are moved in, a latch signal triggers the multifunctional silicon chip to perform phase shifting and attenuating control and triggers the serial-to-parallel chip to output a parallel control signal.

4. The heteroform multi-channel T / R assembly of claim 2 or 3, wherein, The T / R assembly is used for X-band, and a matching branch optimized for heterogeneous integration is arranged on a radio frequency signal transmission path between the multifunctional silicon chip and the gallium arsenide transceiver chip, and the matching branch is configured to optimize the standing wave ratio of the T / R assembly in the working frequency band to not more than 1.

5.

5. The heteroform multi-channel T / R assembly of claim 4, wherein, The multifunctional silicon chip is made of 28 nm CMOS process.

6. The heterostructure multi-channel T / R module of claim 1, wherein, The digital controlled phase shifter integrated in the multifunctional silicon chip is 6-bit, and the digital controlled attenuator is 6-bit.

7. The heterostructure multi-channel T / R module of claim 1, wherein, The microwave board is a multi-layer mixed pressure board, the multifunctional silicon chip and the gallium arsenide transceiver chip are assembled on the microwave board in the form of a bare chip through a sintering process, and interconnection is realized through gold wire bonding.

8. The heterostructure multi-channel T / R module of claim 1, wherein, The T / R assembly further comprises a box body, an upper cover plate and an inner cover plate, the T / R assembly has a whole flat rectangular cuboid structure, and a plurality of circulators and circuits corresponding to the radio frequency transceiver channels are arranged in one-dimensional linear arrangement on the microwave board.

9. The heterostructure multi-channel T / R module of claim 1, wherein, A plurality of heterogeneous multi-channel T / R assemblies as claimed in any one of claims 1 to 9 are included.

10. A phased array antenna, characterized by ​

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