Tokamak device plasma discharge starting method and system

Abstract

The invention discloses a Tokamak device plasma discharge starting method and system, and relates to the technical field of magnetic confinement fusion. The method comprises the following steps: generating initial plasma through the plasma pre-ionization system; the neutral beam injection system injects neutral particles into the initial plasma, and the injection energy is dynamically adjusted according to the plasma density monitored in real time; the electron cyclotron wave heating system injects microwave energy to drive electrons to generate plasma current; the diagnosis system monitors plasma parameters and neutral beam penetration depth in real time, and feeds back the parameters to the injection system and the heating system to adjust the parameters; and after the plasma current reaches the standard and is stable, parameters are optimized to maintain steady-state operation. The system comprises a pre-ionization module, an injection module, a heating module, a diagnosis module and a control module. According to the invention, the volt-second consumption and construction cost are reduced, the starting efficiency and stability are improved, the device is prevented from being damaged, and various magnetic confinement fusion devices are adapted.

Description

Technical Field

[0001] This invention belongs to the field of magnetic confinement fusion technology, specifically relating to a plasma discharge start-up method and system for a tokamak device. Background Technology

[0002] Plasma establishment, current ramp-up, and configuration control are critical aspects of tokamak operation, directly impacting plasma current and run-time. Currently, tokamak startup primarily relies on the magnetic flux change of the central solenoid (CS coil) to induce a circumferential electric field in the vacuum chamber region, driving charged particles to move in a circumferential direction and thus establishing a plasma current. However, the size of the central solenoid and the magnetic field are limited by the device size and magnet coils, resulting in a limited magnetic flux available for establishing the plasma current and maintaining flat-top operation, especially in compact tokamak devices. To achieve high plasma current operation, large central solenoid coils must be designed, and electron cyclotron heating is introduced as an auxiliary startup method. Through microwave energy resonating with electrons in the plasma, pre-ionization-assisted startup is achieved. Continuous microwave heating increases electron energy and drives the circumferential current, effectively reducing magnetic flux consumption during startup and playing a crucial role in alleviating the volt-second requirements of the central solenoid. This method has been widely applied in tokamak device and even fusion reactor design. However, in the initial startup phase, the plasma density is low, limiting the effectiveness of electron cyclotron heating and resulting in a weak driving plasma current, making it difficult to quickly establish a stable plasma current. Neutral beam injection, as a highly efficient plasma heating and current-driven technology, is widely used in the steady-state operation phase of tokamak. However, due to the low plasma density in the initial startup phase, if the neutral beam energy is too high, it may penetrate the plasma and impact the first wall of the tokamak, causing damage to the device. Furthermore, traditional neutral beam injection systems typically use a fixed energy output, which cannot be dynamically adjusted according to changes in plasma density. This results in excessively high energy under low-density conditions and insufficient energy under high-density conditions, failing to effectively heat the plasma. Therefore, neutral beam injection has not yet been widely used in the startup phase.

[0003] Existing ohmic heating and electron cyclotron heating combined startup methods have limited energy transfer efficiency in the initial startup phase, making it difficult to quickly establish a stable plasma current. Furthermore, the application of neutral beam injection during startup is limited, primarily because under low-density plasma conditions, excessively high neutral beam energy may penetrate the plasma and damage the first wall of the device. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a plasma discharge start-up method and system for a tokamak device, which addresses the shortcomings of the prior art by combining neutral beam injection and electron cyclotron wave heating to dynamically adjust the neutral beam injection energy to adapt to changes in plasma density, thereby reducing volt-second consumption, improving start-up efficiency, enhancing plasma stability, and avoiding damage to the first wall of the device. This solves the technical problems of high volt-second consumption, low start-up efficiency, pulse running time, and maximum discharge current in existing tokamak start-up technologies.

[0005] The present invention adopts the following technical solution: A method for starting up plasma discharge in a tokamak device includes the following steps: Initial plasma is generated using a plasma pre-ionization system; Neutral particles are injected into the initial plasma using a neutral beam injection system, and the energy of the neutral beam injection is dynamically adjusted based on the real-time monitored plasma density. Microwave energy is injected into the plasma through an electron cyclotron wave heating system, driving electrons to move along the direction of the magnetic field to generate plasma current, thereby initiating plasma discharge.

[0006] Preferably, the plasma pre-ionization system generates the initial plasma using radio frequency pre-ionization or laser pre-ionization.

[0007] Preferably, the energy of the neutral beam injection is dynamically adjustable within the range of 20~40 keV.

[0008] Preferably, the injection angle of the neutral beam injection is 30°~45°.

[0009] Preferably, the injection power of the neutral beam injection is 0.5~2MW.

[0010] Preferably, the microwave frequency of the electron cyclotron wave heating is 105 GHz and 140 GHz, which is adjusted according to the plasma density and magnetic field strength.

[0011] Preferably, the microwave power of the electron cyclotron wave heating is 1~3MW.

[0012] Preferably, after the plasma discharge is initiated, the plasma parameters and the neutral beam penetration depth are monitored in real time by a diagnostic system, and the monitoring data is fed back to the neutral beam injection system and the electron cyclotron heating system. The neutral beam injection system adjusts the injection energy according to the feedback data, and the electron cyclotron heating system adjusts the heating parameters according to the feedback data.

[0013] Preferably, the plasma parameters include plasma density, and the plasma density monitoring range is 10. 18 m-3 ~10 20 m -3 .

[0014] Preferably, in step S4, the plasma parameters include plasma temperature, and the plasma temperature monitoring range is 1~10keV.

[0015] Preferably, once the plasma current reaches a preset value and the plasma parameters stabilize, the neutral beam injection system and the electron cyclotron wave heating system optimize and adjust their parameters according to operational requirements to maintain continuous and stable plasma operation.

[0016] In a second aspect, embodiments of the present invention provide a plasma discharge start-up system for a tokamak device, comprising: The pre-ionization module is used to generate initial plasma through the plasma pre-ionization system; An injection module is used to inject neutral particles into the initial plasma via a neutral beam injection system, wherein the energy of the neutral beam injection is dynamically adjusted according to the plasma density monitored in real time. The heating module is used to inject microwave energy into the plasma through an electron cyclotron wave heating system, driving electrons to move along the magnetic field direction to generate plasma current.

[0017] Preferably, the plasma pre-ionization system is a radio frequency pre-ionization system or a laser pre-ionization system, and the diagnostic system includes a density sensor, a temperature sensor, and a penetration depth detector.

[0018] Preferably, the injection energy of the neutral beam injection system is adjustable in the range of 20~40keV, the injection angle is adjustable in the range of 30°~45°, and the injection power is adjustable in the range of 0.5~2MW.

[0019] Preferably, the microwave frequency of the electron cyclotron wave heating system is 105 GHz or 140 GHz, and the injection power adjustment range is 1~3 MW.

[0020] Preferably, the system further includes: The diagnostic module is used to monitor plasma parameters and neutral beam penetration depth in real time through the diagnostic system, and to feed the monitoring data back to the neutral beam injection system and the electron cyclotron heating system. The control module is used to enable the neutral beam injection system to adjust the injection energy based on feedback data, and to enable the electron cyclotron wave heating system to adjust the heating parameters based on feedback data.

[0021] Preferably, the control module has a built-in preset low-density threshold, preset high-density threshold and preset target value, and can generate adjustment instructions based on the comparison results between the monitoring data of the diagnostic system and each preset value.

[0022] Preferably, once the plasma current reaches a preset value and the plasma parameters stabilize, the neutral beam injection system and the electron cyclotron wave heating system optimize and adjust their parameters according to operational requirements to maintain continuous and stable plasma operation.

[0023] Thirdly, a computer device includes a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the above-described tokamak device plasma discharge start-up method.

[0024] Fourthly, embodiments of the present invention provide a computer-readable storage medium including a computer program, which, when executed by a processor, implements the steps of the above-described tokamak device plasma discharge start-up method.

[0025] Fifthly, a chip includes a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the steps of the above-described tokamak device plasma discharge start-up method.

[0026] In a sixth aspect, embodiments of the present invention provide an electronic device including a computer program, which, when executed by the electronic device, implements the steps of the plasma discharge start-up method for the tokamak device described above.

[0027] Compared with the prior art, the present invention has at least the following beneficial effects: A plasma discharge start-up method for tokamak devices addresses the drawbacks of traditional start-up methods, namely high volt-second consumption and low efficiency, by combining heating and dynamic feedback mechanisms. The neutral beam injection energy is dynamically adjusted according to plasma density, and combined with the synergistic effect of electron cyclotron wave heating, it avoids neutral beam penetration and damage to the device at low densities while ensuring sufficient heating effect at high densities. Real-time monitoring and closed-loop control enable precise parameter adaptation, allowing the plasma current to be rapidly established and stabilized, significantly improving start-up reliability. This scheme eliminates the need for a large central solenoid, reducing device size and cost, while adapting to the start-up requirements of different tokamak devices, demonstrating both innovation and practicality.

[0028] Furthermore, radio frequency pre-ionization offers advantages such as good uniformity and low energy consumption, making it suitable for long-duration, stable startup scenarios; while laser pre-ionization boasts advantages such as fast ionization speed and concentrated density, meeting the requirements for short-pulse startup. Both methods can stably generate initial plasma that meets the requirements for subsequent heating, and the working gas pressure is controlled within a reasonable range to ensure ionization effectiveness. This design expands the applicable scenarios of the technical solution, allowing for flexible selection of different types of tokamak devices with varying operational requirements, thus improving the overall compatibility and feasibility of the solution.

[0029] Furthermore, precise energy control is achieved through linear adjustment of the accelerating electrode voltage, with a voltage regulation accuracy of 0.1kV, ensuring the timeliness and accuracy of energy adjustment. At low densities, energy is reduced to prevent penetration of the device, while at high densities, energy is increased to enhance heating efficiency, effectively solving the poor adaptability problem caused by traditional fixed energy injection. Simulation and experimental verification have shown that this range maximizes energy utilization efficiency and reduces energy waste, while laying the foundation for subsequent coordinated optimization of parameters such as power and angle, thus strengthening the stability and effectiveness of the overall technical solution.

[0030] Furthermore, the optimized angle design extends the path of neutral particles in the plasma, maximizing the collision probability and improving energy transfer efficiency. Simultaneously, it prevents neutral particles from directly impacting the vacuum chamber walls, reducing energy loss and the risk of device damage. This solves the problems of poor performance and safety hazards caused by unreasonable injection angles in traditional methods. The angle adjustment accuracy reaches 1°, allowing for fine-tuning according to specific device requirements and adapting to different vacuum chamber structures. This further enhances the adaptability and safety of the technical solution, ensuring a smooth start-up process.

[0031] Furthermore, the power is dynamically adjusted during the startup phase. In the initial pre-ionization stage, low power is used to match the energy absorption capacity of the low-density plasma, avoiding instability caused by excess energy. As the density increases, the power is increased to meet the heating and current-driven requirements, solving the problems of energy waste and insufficient effect associated with traditional fixed-power injection. This power range, along with energy and angle parameters, is optimized to ensure that the energy input adapts to the plasma state throughout the process, improving startup efficiency and stability while reducing energy consumption and lowering maintenance costs for long-term operation of the device.

[0032] Furthermore, frequency switching is achieved through resonant cavity adjustment, with a response time of less than 10ms, ensuring rapid adaptation to resonance conditions. 105GHz is suitable for low-density, low-magnetic-field scenarios, while 140GHz is suitable for high-density, high-magnetic-field scenarios, solving the problem that traditional single-frequency methods cannot fully match resonance requirements. This design maximizes microwave energy absorption efficiency, enhances electron cyclotron drive effect, accelerates plasma current build-up, and improves the adaptability of the heating system to different start-up conditions, strengthening the synergistic effect of the combined heating scheme.

[0033] Furthermore, the power is dynamically adjusted according to the plasma state. Low power is applied initially to avoid energy excess, while high power ensures continuous heating, resolving the poor adaptability issue caused by traditional fixed-power heating. This power range, in conjunction with frequency parameters, ensures efficient conversion of microwave energy into plasma energy, enhancing the current-driven effect while avoiding plasma fluctuations caused by sudden power changes. Precise power control improves the stability of the heating process, providing a guarantee for stable plasma establishment and further optimizing overall start-up efficiency.

[0034] Furthermore, the measurement accuracy reaches ±5%, and the sampling frequency is 100Hz, enabling real-time capture of dynamic density changes and providing reliable data support for neutral beam energy adjustment. This monitoring range fully covers the density change range throughout the entire startup process, solving the data loss problem caused by insufficient monitoring range in traditional methods. The sensor's installation position is optimized to avoid direct contact with plasma, improving its lifespan and measurement stability. Accurate density data is the core foundation of dynamic feedback control, ensuring precise adjustment of various parameters and providing a guarantee for closed-loop control during startup.

[0035] Furthermore, the measurement accuracy reaches ±5%, and the sampling frequency is 100Hz, enabling real-time capture of dynamic density changes and providing reliable data support for neutral beam energy adjustment. This monitoring range fully covers the density change range throughout the entire startup process, solving the data loss problem caused by insufficient monitoring range in traditional methods. The sensor's installation position is optimized to avoid direct contact with plasma, improving its lifespan and measurement stability. Accurate density data is the core foundation of dynamic feedback control, ensuring precise adjustment of various parameters and providing a guarantee for closed-loop control during startup.

[0036] It is understood that the beneficial effects of the second to sixth aspects mentioned above can be found in the relevant descriptions in the first aspect mentioned above, and will not be repeated here.

[0037] In summary, the method of the present invention dynamically adjusts the neutral beam injection energy by combining neutral beam injection and electron cyclotron wave heating to adapt to changes in plasma density, thereby reducing volt-second consumption, improving start-up efficiency, enhancing plasma stability, and avoiding damage to the first wall of the device.

[0038] The technical solution of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description

[0039] Figure 1 This is a flowchart illustrating the process of starting up a tokamak assisted by a combination of neutral beam injection and electron cyclotron waves, as described in this invention. Figure 2 A schematic diagram of a computer device provided in an embodiment of the present invention; Figure 3 This is a block diagram of a chip provided according to an embodiment of the present invention.

[0040] Among them, 60. Computer equipment; 61. Processor; 62. Memory; 63. Computer program; 600. Electronic device; 610. Processing unit; 620. Storage unit; 6201. Random access memory unit; 6202. Cache memory unit; 6203. Read-only memory unit; 6204. Program / utility; 6205. Program module; 630. Bus; 640. Display unit; 650. Input / output interface; 660. Network adapter; 700. External device. Detailed Implementation

[0041] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0042] In the description of this invention, it should be understood that the terms "comprising" and "including" indicate the presence of the described features, integrals, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.

[0043] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the invention. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.

[0044] It should also be further understood that the term "and / or" as used in this specification and the appended claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes such combinations. For example, A and / or B can represent three cases: A alone, A and B simultaneously, and B alone. Additionally, the character " / " in this invention generally indicates that the preceding and following objects have an "or" relationship.

[0045] It should be understood that although terms such as first, second, third, etc., may be used in the embodiments of the present invention to describe the preset range, these preset ranges should not be limited to these terms. These terms are only used to distinguish the preset ranges from one another. For example, without departing from the scope of the embodiments of the present invention, the first preset range may also be referred to as the second preset range, and similarly, the second preset range may also be referred to as the first preset range.

[0046] Depending on the context, the word "if" as used here can be interpreted as "when," "when," "in response to determination," or "in response to detection." Similarly, depending on the context, the phrase "if determination" or "if detection (of the stated condition or event)" can be interpreted as "when determination," "in response to determination," "when detection (of the stated condition or event)," or "in response to detection (of the stated condition or event)."

[0047] The accompanying drawings illustrate various structural schematic diagrams according to embodiments disclosed in this invention. These drawings are not to scale, and some details have been enlarged for clarity, and some details may have been omitted. The shapes of the various regions and layers shown in the drawings, as well as their relative sizes and positional relationships, are merely exemplary and may deviate from reality due to manufacturing tolerances or technical limitations. Furthermore, those skilled in the art can design regions / layers with different shapes, sizes, and relative positions as needed.

[0048] This invention provides a plasma discharge start-up method for a tokamak device. By monitoring parameters such as plasma density and temperature in real time, the energy of the neutral beam injection is dynamically adjusted to ensure that the neutral beam energy is not too high and penetrates the plasma under low-density conditions, while providing sufficient energy to effectively heat the plasma under high-density conditions. Through a combination of neutral beam injection and electron cyclotron wave heating, the neutral beam injection energy is dynamically adjusted to adapt to changes in plasma density. This combined start-up method not only improves energy transfer efficiency but also enhances plasma stability, significantly increasing the success rate and efficiency of tokamak start-up. Furthermore, by optimizing the dynamic adjustment of the neutral beam energy, this invention can effectively reduce damage to the first wall of the tokamak, extend the device's service life, and reduce the construction and maintenance costs of the fusion reactor.

[0049] The plasma pre-ionization system is the core device for generating the initial plasma. It employs either radio frequency (RF) pre-ionization equipment or laser pre-ionization equipment. The RF-100 RF pre-ionization generator is a suitable model, characterized by high ionization efficiency and strong stability, enabling rapid generation of initial plasma that meets startup requirements. In practical applications, other models can also be selected, and this application does not limit the choice. The neutral beam injection system uses the NBI-500 neutral beam injector, with an injection energy adjustment range covering 20~40keV. It can accurately respond to density feedback signals for dynamic adjustment, and the injection angle can be fixed at 30°~45° via a mechanical structure to ensure effective interaction between neutral particles and the plasma. In practical applications, other models can also be selected, and this application does not limit the choice. The electron cyclotron wave heating system uses the ECRH-800 microwave heating equipment, capable of outputting microwave energy at frequencies of 105GHz or 140GHz, with a power adjustment range of 1~3MW. It can drive electron motion through resonance effects. In practical applications, other models can also be selected, and this application does not limit the choice. The diagnostic system includes a density sensor, a temperature sensor, and a penetration depth detector, using a DENS-2000 density sensor (monitoring range 10). 18 m -3 ~10 20 m -3 The device uses a TEMP-3000 temperature sensor (monitoring range 1~10keV) and a PEN-1500 penetration depth detector. The sensor data sampling frequency is 100Hz to ensure real-time performance. In practical applications, other models of these components can also be selected, and this application embodiment does not limit this. The preset value is set according to the design requirements of the tokamak device. For example, the target plasma current preset value for a medium-sized tokamak device is 1mA, and the stability judgment criterion is that the plasma current fluctuation amplitude does not exceed ±5% within 30 seconds.

[0050] This invention discloses a plasma discharge startup method for a tokamak device. By synergistically utilizing neutral beam injection and electron cyclotron wave heating, the neutral beam injection energy is dynamically adjusted to adapt to changes in plasma density, thereby optimizing the startup process. The method includes the following steps: S1, Plasma pre-ionization In the initial stage of tokamak startup, an initial plasma is first generated through a pre-ionization system, and the target plasma current and density ramp-up trajectory are set. The initial plasma density range is 10. 17 ~10 18 m -3 The electron temperature is 0.1~1.0 keV, and the initial plasma is generated through a pre-ionization system.

[0051] The radio frequency (RF) pre-ionization method generates a 13.56MHz RF signal using an RF-100 RF generator, which is transmitted to the vacuum chamber via a coupling coil. This ionizes the working gas (such as hydrogen or deuterium) within the vacuum chamber, generating initial plasma. This method features good ionization uniformity and low energy consumption. In practical applications, other RF generator models can also be selected, and this application does not limit this choice. The laser pre-ionization method uses an LS-800 pulsed laser, outputting a 1064nm laser beam focused on the central region of the vacuum chamber. The working gas is ionized through photoionization. This method offers advantages such as fast ionization speed and concentrated initial plasma density. In practical applications, other laser models can also be selected, and this application does not limit this choice. The working gas pressure for both methods is controlled at 1×10⁻⁶. -3 Pa~5×10 -3 Pa ensures effective ionization.

[0052] Working principle: Radio frequency pre-ionization excites gas molecules with radio frequency energy, causing them to ionize into charged particles and form initial plasma; laser pre-ionization directly breaks the chemical bonds of gas molecules with a high-energy laser beam to generate initial plasma. Both methods can provide the basic plasma environment for subsequent neutral beam injection and electron cyclotron wave heating.

[0053] The specific implementation methods of the plasma pre-ionization system were clarified. Both methods can stably generate initial plasma to meet the start-up requirements of different tokamak devices. The uniformity and low energy consumption of radio frequency pre-ionization are suitable for long-term start-up scenarios, while the speed of laser pre-ionization is suitable for short-pulse start-up requirements, thus improving the adaptability and practicality of the technical solution.

[0054] S2, Neutral Beam Injection High-energy neutral particles are injected into the plasma using a neutral beam injection system. The energy of the neutral beam is dynamically adjusted based on real-time monitoring of the plasma density. When the plasma density is low, the system automatically reduces the neutral beam energy to prevent the beam from penetrating the plasma and impacting the first wall of the device; as the plasma density gradually increases, the system gradually increases the neutral beam energy to ensure effective heating of the plasma.

[0055] Parameter settings: Neutral beam energy range: In the initial stage of startup, the plasma is in a low-density state (<5×10). 18 m -3 The control unit sets the NBI energy to 20~40keV, monitors the plasma density in real time, and dynamically updates the NBI energy setpoint every 50ms. When the density rises to >2×10 19 m -3At the same time, the NBI energy can be gradually increased to 80~120keV, and the power can be increased to 2~5MW to enhance heating and current drive efficiency.

[0056] Injection angle: 30° to 45°, optimizing the interaction between the neutral beam and the plasma to avoid beam penetration.

[0057] Injection power: 0.5~2MW, adjusted according to the needs of the start-up phase.

[0058] The energy adjustment of the neutral beam injection system is achieved through the adjustment of the accelerating electrode voltage of the NBI-500 neutral beam injector. The accelerating electrode voltage has a linear relationship with the injected energy, with a voltage adjustment range of 40~120kV, corresponding to an injected energy of 20~40keV, and a voltage adjustment accuracy of 0.1kV, ensuring the precision of energy adjustment. In practical applications, other models of the neutral beam injector can also be selected, and this application embodiment does not limit this. The trigger signal for energy adjustment comes from the plasma density monitoring data of the diagnostic system. After the density data is transmitted to the control system, the control system calculates the target accelerating voltage through a PID algorithm and drives the high-voltage power supply to adjust the accelerating electrode voltage, thereby achieving a dynamic response of the injected energy.

[0059] The injection angle of the neutral beam injection is fixed by the mechanical structure of the injection port of the neutral beam injection system. The injection port forms an angle of 30° to 45° with the tangent direction of the tokamak vacuum chamber. The specific angle can be fixed by adjusting the angle scale on the support, with an adjustment accuracy of 1°. This angle range has been verified through simulation and experiments to ensure that the collision probability between neutral particles and plasma is maximized while avoiding direct impact on the vacuum chamber wall.

[0060] The injection power of the neutral beam injection is achieved by adjusting the beam current intensity of the NBI-500 neutral beam injector, with an adjustment range of 20A to 100A. Combined with the accelerating energy of 20 to 40 keV, the calculated injection power range is 0.5 to 2 MW (power = energy × beam current intensity), and the beam current adjustment accuracy is 0.1A, ensuring accurate power control. In practical applications, other models of the neutral beam injector can also be selected, and this application does not limit this. The injection power is dynamically adjusted according to the start-up phase, with an initial pre-ionization power of 1 to 2 MW, gradually increasing to 3 to 5 MW as the plasma density rises.

[0061] When the neutral beam injection system receives plasma density data from the diagnostic system, it adjusts the acceleration energy of neutral particles by modifying the accelerating electrode voltage based on the comparison between the density value and a preset threshold. This ensures the injected energy matches the plasma density, reducing energy at low densities to prevent penetration and increasing energy at high densities to enhance heating. The injection angle is set so that neutral particles enter the plasma region at an angle, extending their path and increasing the number of collisions with plasma particles, thus improving energy transfer efficiency. Simultaneously, it prevents direct impact of neutral particles on the device walls, reducing energy loss and the risk of wall damage. The injection power and energy work synergistically to provide energy for heating and current driving of the plasma. Low power adapts to the energy absorption capacity of the initial low-density plasma, while high power meets the energy demands of the later high-density plasma, ensuring a continuous and appropriate energy input to the plasma throughout the startup process.

[0062] S3, Electron Cyclone Wave Heating As the plasma density increases, the electron cyclotron wave heating system begins to operate, injecting microwave energy into the plasma. The microwave energy resonates with the electrons in the plasma, driving them to move along the magnetic field direction, thereby generating a plasma current.

[0063] When the plasma density reaches 1~2×10 19 m -3 The ECRH system is automatically started; the initial ECRH power is set to 0.5~1.5MW, and the frequency is selected according to the longitudinal field strength (such as 105GHz or 140GHz); as the plasma current and temperature increase, the ECRH power is gradually increased to 1~3MW to optimize the current drive profile and energy confinement.

[0064] Parameter settings: Microwave frequencies: 105 GHz and 140 GHz, adjusted according to plasma density and magnetic field strength.

[0065] Microwave power: 1MW to 3MW, ensuring sufficient heating effect.

[0066] Heating time: dynamically adjusted according to changes in plasma density and temperature.

[0067] The electron cyclotron wave heating system uses an ECRH-800 microwave generator, which can switch between 105GHz and 140GHz microwave frequencies. The switching is achieved through adjustment of the resonant cavity inside the generator, with a switching response time of less than 10ms. In practical applications, other models of this microwave generator can also be selected; this application does not limit this. When the plasma density is below 5×10... 19 m -3Furthermore, when the magnetic field strength is 2T, a frequency of 105GHz is selected; when the plasma density is higher than 5×10 19 m -3 Furthermore, when the magnetic field strength is 2T, the frequency is switched to 140GHz. When the magnetic field strength changes, the microwave frequency is adjusted synchronously according to the resonance condition (the electron cyclotron resonance frequency is proportional to the magnetic field strength).

[0068] The microwave power for electron cyclotron wave heating is adjusted by the power amplifier of an ECRH-800 microwave generator. The power amplifier's output power range is 1~3MW, with a power adjustment accuracy of 0.1MW, ensuring stable power output. In practical applications, other models of this microwave generator can also be selected, and this embodiment does not limit this. The microwave power is adjusted based on plasma density and temperature data fed back from the diagnostic system. In the initial stage, when the plasma density is low, the power is set to 1~1.5MW; as the plasma density and temperature increase, it is gradually increased to 2~3MW.

[0069] The microwave frequency for electron cyclotron wave heating needs to match the electron cyclotron resonance frequency in the plasma. The electron cyclotron resonance frequency varies under different plasma densities and magnetic field strengths. By switching between 105 GHz and 140 GHz frequencies, it is ensured that the microwave energy resonates with the electrons, maximizing energy absorption efficiency and driving the electrons to move along the magnetic field direction to generate plasma current. The microwave power determines the energy input intensity of electron cyclotron wave heating. Low power is suitable for the energy carrying capacity of the initial low-density plasma, avoiding plasma instability caused by excess energy. High power meets the energy demand of the later high-density plasma, ensuring continuous driving of electron movement and stabilizing the plasma current.

[0070] S4. Real-time monitoring and feedback control The system monitors plasma density, temperature, and neutral beam penetration depth in real time through a diagnostic system, and feeds the data back to the neutral beam injection system and the electron cyclotron wave heating system. When the plasma density is detected to be too low, the system automatically reduces the neutral beam energy to avoid penetration; when the plasma density reaches the preset target value, the system gradually increases the power of the electron cyclotron wave heating to ensure the stable establishment of the plasma current.

[0071] The diagnostic unit continuously monitors plasma density (10) 18 ~10 20 m -3 The system controls the electron temperature (0.1~10keV) and NBI beam penetration depth; the central control unit dynamically calculates the optimized setpoints of NBI energy and ECRH power based on real-time data to achieve millisecond-level feedback control; and establishes safety protection logic: when a sudden drop in density or penetration risk is detected, it automatically triggers the NBI energy reduction or ECRH power intervention.

[0072] Parameter settings: Plasma density is monitored using a DENS-2000 density sensor, which is based on the principle of microwave interferometry. It emits 10 GHz probe microwaves and calculates the density value by measuring the phase shift of the microwaves after they pass through the plasma. The monitoring range covers 10 GHz. 18 m -3 Up to 10 20 m -3 The measurement accuracy is ±5%, and the data sampling frequency is 100Hz to ensure real-time capture of density changes. In practical applications, other models of this density sensor can also be selected, but this application embodiment does not limit this. The sensor's probe is installed on the side wall of the tokamak vacuum chamber, and the distance between the probe and the plasma region is 0.5m to avoid damage caused by direct contact.

[0073] The density sensor continuously emits probe microwaves. As the microwaves pass through the plasma, their phase shifts with the change in plasma density. By detecting the phase shift and inputting it into a preset algorithm, the real-time plasma density value is calculated and fed back to the control system, providing a basis for adjusting the neutral beam injection energy and electron cyclotron heating parameters.

[0074] The plasma temperature is monitored using a TEMP-3000 temperature sensor. This sensor employs the Langmuir probe method, with a tungsten alloy probe (high temperature resistant and oxidation resistant), a diameter of 1 mm, and a length of 50 mm. The electron and ion temperatures are calculated by measuring the current-voltage characteristic curve between the probe and the plasma. The monitoring range is 1~10 keV, the measurement accuracy is ±3%, and the data sampling frequency is 100 Hz. In practical applications, other models of this temperature sensor can also be selected; this embodiment does not limit this choice. The probe is mounted on a retractable mechanism, extending into the vacuum chamber during startup to contact the plasma for measurement, and retracting after shutdown to avoid wear and tear caused by prolonged exposure.

[0075] After the Langmuir probe of the temperature sensor is inserted into the plasma, different bias voltages are applied, and the corresponding current response is measured. By analyzing the saturation segment and slope of the current-voltage curve, the electron temperature and ion temperature are calculated respectively. The temperature data is fed back to the control system, and works in conjunction with the density data to optimize the parameter adjustment of neutral beam injection and electron cyclotron heating.

[0076] S5, steady-state operation Once the plasma current reaches more than 95% of the target value and the density and temperature stabilize, the system automatically switches to steady-state operation mode. During the steady-state phase, the NBI and ECRH power are optimally allocated according to actual operating requirements to maintain current flat-top and energy balance.

[0077] Although the technical solution of this invention has significant innovation and practicality, there are still some technical means that can be circumvented or replaced: Alternative heating methods: Besides electron cyclotron wave heating, other heating methods (such as ion cyclotron heating or low-hybrid wave heating) can also be combined with neutral beam injection to achieve similar startup effects. Therefore, when drafting application documents, the scope of protection should be broadened as much as possible to cover combinations of multiple heating methods.

[0078] Alternative feedback control mechanisms: Although this invention employs a real-time feedback control mechanism to dynamically adjust the neutral beam energy, other control algorithms or adjustment methods (such as AI-based predictive control) may also achieve similar effects. Therefore, the claims should avoid limiting specific control algorithms as much as possible to broaden the scope of protection.

[0079] Alternative Neutral Beam Injection Techniques: Future advancements in neutral beam injection techniques may enable plasma penetration without relying on dynamic adjustment. Therefore, when drafting the application, the innovativeness of dynamically adjusting the neutral beam energy in this invention should be emphasized, rather than relying solely on the neutral beam injection technique itself.

[0080] This invention is the first to propose combining neutral beam injection and electron cyclotron wave heating for the startup phase of a tokamak device. This combination enables rapid establishment of plasma current through neutral beam injection in the initial startup phase, and further stabilization of the plasma through electron cyclotron wave heating as plasma density increases, significantly improving the startup efficiency and stability of the tokamak. A real-time feedback control mechanism dynamically adjusts the neutral beam injection energy to adapt to changes in plasma density. In the low-density startup phase, the system automatically reduces the neutral beam energy to prevent the neutral beam from penetrating the plasma and damaging the first wall of the device; in the high-density startup phase, the system gradually increases the neutral beam energy to ensure effective plasma heating. This dynamic adjustment mechanism is a key innovation of this invention. A diagnostic system monitors plasma density, temperature, and the penetration depth of the neutral beam in real time, feeding the data back to the neutral beam injection system and the electron cyclotron wave heating system for dynamic adjustment. This feedback control mechanism ensures the safety and efficiency of the startup process. By reducing dependence on CS coil flux changes, volt-second consumption is reduced, thereby significantly reducing the size of the CS coil. This innovation not only simplifies the structural design of future fusion reactors but also reduces their construction costs.

[0081] In another embodiment of the present invention, a plasma discharge start-up system for a tokamak device is provided. This system can be used to implement the above-mentioned plasma discharge start-up method for a tokamak device. Specifically, the plasma discharge start-up system for a tokamak device includes a pre-ionization module, an injection module, a heating module, a diagnostic module, and a control module.

[0082] The pre-ionization module is used to generate initial plasma through the plasma pre-ionization system. An injection module is used to inject neutral particles into the initial plasma via a neutral beam injection system, wherein the energy of the neutral beam injection is dynamically adjusted according to the plasma density monitored in real time. The heating module is used to inject microwave energy into the plasma through an electron cyclotron wave heating system, driving electrons to move along the magnetic field direction to generate plasma current. The diagnostic module is used to monitor plasma parameters and neutral beam penetration depth in real time through the diagnostic system, and to feed the monitoring data back to the neutral beam injection system and the electron cyclotron heating system. The control module is used to enable the neutral beam injection system to adjust the injection energy according to feedback data, and to enable the electron cyclotron heating system to adjust the heating parameters according to feedback data; When the plasma current reaches a preset value and the plasma parameters stabilize, the neutral beam injection system and the electron cyclotron wave heating system optimize and adjust the parameters according to the operational requirements to maintain the continuous and stable operation of the plasma.

[0083] Preferably, the plasma pre-ionization system is a radio frequency pre-ionization system or a laser pre-ionization system, and the diagnostic system includes a density sensor, a temperature sensor, and a penetration depth detector.

[0084] Preferably, the injection energy of the neutral beam injection system is adjustable in the range of 20~40keV, the injection angle is adjustable in the range of 30°~45°, and the injection power is adjustable in the range of 0.5~2MW.

[0085] Preferably, the microwave frequency of the electron cyclotron wave heating system is 105 GHz or 140 GHz, and the injection power adjustment range is 1~3 MW.

[0086] Preferably, the control module has a built-in preset low-density threshold, preset high-density threshold and preset target value, and can generate adjustment instructions based on the comparison results between the monitoring data of the diagnostic system and each preset value.

[0087] This invention provides a terminal device comprising a processor and a memory. The memory stores a computer program, which includes program instructions. The processor executes the program instructions stored in the computer storage medium. The processor may be a Central Processing Unit (CPU), or other general-purpose processors, graphics processing units (GPUs), tensor processing units (TPUs), digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. It is the computing and control core of the terminal, suitable for implementing one or more instructions, specifically suitable for loading and executing one or more instructions to achieve a corresponding method flow or corresponding function. The processor described in this embodiment can be used in the operation of a plasma discharge start-up method for a tokamak device, including: An initial plasma is generated through a plasma pre-ionization system. Neutral particles are injected into the initial plasma through a neutral beam injection system, the energy of which is dynamically adjusted based on real-time monitoring of the plasma density. Microwave energy is injected into the plasma through an electron cyclotron wave heating system to drive electrons to move along the magnetic field direction and generate a plasma current. The plasma parameters and neutral beam penetration depth are monitored in real time through a diagnostic system, and the monitoring data is fed back to the neutral beam injection system and the electron cyclotron wave heating system. The neutral beam injection system adjusts the injection energy based on the feedback data, and the electron cyclotron wave heating system adjusts the heating parameters based on the feedback data. When the plasma current reaches a preset value and the plasma parameters stabilize, the neutral beam injection system and the electron cyclotron wave heating system optimize and adjust the parameters according to operational requirements to maintain continuous and stable plasma operation.

[0088] Please see Figure 2The terminal device is a computer device. In this embodiment, the computer device 60 includes a processor 61, a memory 62, and a computer program 63 stored in the memory 62 and executable on the processor 61. When executed by the processor 61, the computer program 63 implements the method for estimating the concentration of radioactive iodine species in the containment vessel after an accident, as described in this embodiment. To avoid repetition, these details are not elaborated here. Alternatively, when executed by the processor 61, the computer program 63 implements the functions of each model / unit in the plasma discharge startup system of the tokamak device in this embodiment. To avoid repetition, these details are not elaborated here.

[0089] Computer device 60 can be a desktop computer, laptop, handheld computer, cloud server, or other computing device. Computer device 60 may include, but is not limited to, a processor 61 and a memory 62. Those skilled in the art will understand that... Figure 2 This is merely an example of computer device 60 and does not constitute a limitation on computer device 60. It may include more or fewer components than shown, or combine certain components, or different components. For example, computer device may also include input / output devices, network access devices, buses, etc.

[0090] The processor 61 may be a Central Processing Unit (CPU), or other general-purpose processors, graphics processing units (GPUs), tensor processing units (TPUs), digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor.

[0091] The memory 62 can be an internal storage unit of the computer device 60, such as a hard disk or RAM of the computer device 60. The memory 62 can also be an external storage device of the computer device 60, such as a plug-in hard disk, smart media card (SMC), secure digital (SD) card, flash card, etc., provided on the computer device 60.

[0092] Furthermore, the memory 62 may include both internal storage units of the computer device 60 and external storage devices. The memory 62 is used to store computer programs and other programs and data required by the computer device. The memory 62 can also be used to temporarily store data that has been output or will be output.

[0093] Please see Figure 3 The terminal device is an electronic device 600, which is manifested in the form of a general-purpose computing device. The components of the electronic device may include, but are not limited to: at least one processing unit 610, at least one storage unit 620, a bus 630 connecting different platform components (including storage unit 620 and processing unit 610), a display unit 640, etc.

[0094] The storage unit stores program code, which can be executed by the processing unit 610 to perform the steps described in the method section of this specification according to various exemplary embodiments of the present invention. For example, the processing unit 610 can perform actions such as... Figure 1 The steps are shown in the figure.

[0095] Storage unit 620 may include a readable medium in the form of a volatile storage unit, such as random access memory (RAM) 6201 and / or cache memory 6202, and may further include a read-only memory (ROM) 6203.

[0096] Storage unit 620 may also include a program / utility 6204 having a set (at least one) program module 6205, such program module 6205 including but not limited to: operating system, one or more application programs, other program modules and program data, each or some combination of these examples may include an implementation of a network environment.

[0097] Bus 630 can represent one or more of several types of bus structures, including a memory cell bus or memory cell controller, a peripheral bus, a graphics acceleration port, a processing unit, or a local bus using any of the multiple bus structures.

[0098] Electronic device 600 can also communicate with one or more external devices 700 (e.g., keyboard, pointing device, Bluetooth device, etc.), and with one or more devices that enable a user to interact with electronic device 600, and / or with any device that enables electronic device 600 to communicate with one or more other computing devices (e.g., router, modem). This communication can be performed via input / output interface 650. Furthermore, electronic device 600 can also communicate with one or more networks (e.g., local area network, wide area network, and / or public network, such as the Internet) via network adapter 660. Network adapter 660 can communicate with other modules of electronic device 600 via bus 630. It should be understood that, although not shown in the figures, other hardware and / or software modules can be used in conjunction with electronic device 600, including but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID systems, tape drives, and data backup storage platforms.

[0099] Example 4 This invention also provides a storage medium, specifically a computer-readable storage medium, which is a memory device in a terminal device for storing programs and data. It is understood that the computer-readable storage medium here can include both built-in storage media in the terminal device and extended storage media supported by the terminal device; it can be any tangible medium containing or storing a program that can be used by or in conjunction with an instruction execution system, apparatus, or device. The computer-readable storage medium provides storage space that stores the terminal's operating system. Furthermore, the storage space also stores one or more instructions suitable for loading and execution by a processor, which can be one or more computer programs (including program code). More specific examples of the computer-readable storage medium include: an electrical connection with one or more wires, a portable disk, a hard disk, random access memory, read-only memory, erasable programmable read-only memory, optical fiber, portable compact disk read-only memory, optical storage device, magnetic storage device, or any suitable combination thereof.

[0100] Computer-readable storage media also include data signals propagated in baseband or as part of a carrier wave, carrying readable program code. Such propagated data signals can take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. A readable storage medium can also be any readable medium other than a readable storage medium that can send, propagate, or transmit a program for use by or in connection with an instruction execution system, apparatus, or device. The program code contained on the readable storage medium can be transmitted using any suitable medium, including but not limited to wireless, wired, optical fiber, radio frequency, etc., or any suitable combination thereof.

[0101] Program code for performing the operations of this invention can be written in any combination of one or more programming languages, including object-oriented programming languages ​​such as Java and C++, and conventional procedural programming languages ​​such as C or similar languages. The program code can execute entirely on the user's computing device, partially on the user's computing device, as a standalone software package, partially on the user's computing device and partially on a remote computing device, or entirely on a remote computing device or server. In cases involving remote computing devices, the remote computing device can be connected to the user's computing device via any type of network, including a local area network (LAN) or a wide area network (WAN), or it can be connected to an external computing device (e.g., via the Internet using an Internet service provider).

[0102] One or more instructions stored in a computer-readable storage medium can be loaded and executed by a processor to implement the corresponding steps of the plasma discharge start-up method for the tokamak device in the above embodiments; one or more instructions in the computer-readable storage medium are loaded and executed by the processor to perform the following steps: An initial plasma is generated through a plasma pre-ionization system. Neutral particles are injected into the initial plasma through a neutral beam injection system, the energy of which is dynamically adjusted based on real-time monitoring of the plasma density. Microwave energy is injected into the plasma through an electron cyclotron wave heating system to drive electrons to move along the magnetic field direction and generate a plasma current. The plasma parameters and neutral beam penetration depth are monitored in real time through a diagnostic system, and the monitoring data is fed back to the neutral beam injection system and the electron cyclotron wave heating system. The neutral beam injection system adjusts the injection energy based on the feedback data, and the electron cyclotron wave heating system adjusts the heating parameters based on the feedback data. When the plasma current reaches a preset value and the plasma parameters stabilize, the neutral beam injection system and the electron cyclotron wave heating system optimize and adjust the parameters according to operational requirements to maintain continuous and stable plasma operation.

[0103] The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0104] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. The components of the embodiments of the present invention described and shown in the accompanying drawings can generally be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without inventive effort are within the scope of protection of the present invention.

[0105] In a medium-sized tokamak device, the combined start-up method provided by this invention is used for startup. The plasma volume of this device is 20 m³. 3 The magnetic field strength is 2T and the target plasma current is 1MA.

[0106] Implementation steps Plasma pre-ionization: An initial plasma was generated using a radio frequency pre-ionization system, with a plasma density of ~10. 18 m -3 The temperature is ~0.5keV.

[0107] Neutral beam injection and dynamic modulation: Initial stage: The plasma density is low, and the system automatically sets the neutral beam energy to 20 keV, the injection angle to 30°, and the injection power to 0.5MW.

[0108] Dynamic adjustment: As the plasma density increases, the system gradually increases the neutral beam energy. When the plasma density reaches 2×10⁻⁶... 19 m -3 At that time, the neutral beam energy was adjusted to 40keV and the injection power was 1MW.

[0109] Electron cyclotron wave heating: When the plasma density reaches 2×10 19 m -3At that time, the electron cyclotron wave heating system started working, with a microwave frequency of 105 GHz and a power of 1 MW.

[0110] As plasma density further increases, the electron cyclotron wave heating power is gradually increased to 2MW.

[0111] Feedback control mechanism: The system monitors plasma density, temperature, and neutral beam penetration in real time through a diagnostic system, and feeds the data back to the neutral beam injection system and the electron cyclotron heating system.

[0112] When the plasma density is detected to be too low, the system automatically reduces the neutral beam energy to avoid penetration; when the plasma density reaches the preset target value, the system gradually increases the power of the electron cyclotron wave heating.

[0113] Steady-state operation: Once the plasma current reaches 1 mA and the plasma density and temperature stabilize, the system enters steady-state operation mode. At this point, the power of neutral beam injection and electron cyclotron wave heating is optimized and adjusted according to operational requirements.

[0114] Experimental data (validation of a medium-sized tokamak device) Experimental setup: plasma volume 20m 3 The magnetic field strength is 2T and the target plasma current is 1MA.

[0115] Comparison of volt-second consumption: Traditional ohmic heating requires 80Vs to start, while this invention consumes only 45Vs, a reduction of 43.75%. Startup efficiency comparison: Traditional methods require 60 seconds to achieve a current of 1mA, while this invention only requires 35 seconds, resulting in a 41.67% increase in efficiency. Plasma stability: During the startup process of this invention, the current fluctuation amplitude is ≤±3%, while that of the traditional method is ±8%. Device damage status: After 100 consecutive starts, the first wall of the device of the present invention showed no obvious damage, while the conventional method showed 3 wear marks. Energy efficiency: The energy transfer efficiency of this invention reaches 65%, compared to 42% for the traditional method, representing an improvement of 54.76%.

[0116] Example 5: Rapid Startup Process of Medium-Sized Tokamak Based on NBI-ECRH Collaborative Feedback This embodiment takes a medium-sized tokamak device with a plasma volume of 20 m³ and a longitudinal field strength of 2.5 T as an example (e.g.) Figure 1As shown in the figure, the goal is to safely and stably establish a plasma current of 1 MA within 150 milliseconds (ms).

[0117] 1. System initialization and pre-ionization First, an initial plasma was generated in the vacuum chamber using a radio frequency pre-ionization system. The initial plasma line average density was 5 × 10⁻⁶. 17 m -3 The electronic temperature is approximately 0.3 keV. The central control unit sets the initial parameters of NBI and ECRH according to the preset startup trajectory.

[0118] 2. Dynamic adjustment of neutral beam energy during the initiation phase t=0~50ms (low density phase): plasma density is less than 1×10 18 m -3 To prevent NBI beam penetration, the control unit sets the NBI energy to 30~keV, the injection power to 0.5~MW, and the injection angle to 35°.

[0119] t=50~100ms (density ramp-up phase): Real-time diagnostics show a gradual increase in plasma density. The control unit dynamically adjusts the NBI energy at 10ms intervals. When the density reaches 1×10⁻⁶... 18 m -3 At that time, the NBI energy was increased to 50~keV and the power increased to 1~MW.

[0120] t>100ms (high-density stage): when the density exceeds 1×10 19 m -3 Subsequently, the NBI energy was further increased to 80~keV, and the injection power was maintained at 2.5~MW to achieve efficient current drive.

[0121] 3. Synergistic intervention of electron cyclotron resonance heating When the plasma density reaches 1×10 18 m -3 At approximately t~80ms, the central control unit automatically starts the ECRH system.

[0122] The initial ECRH power was set to 0.5 MW and the frequency to 110 GHz (matching the longitudinal field strength).

[0123] As the plasma current increases, the ECRH power is gradually increased to 1 MW during the t~100ms interval to assist in current profile optimization and plasma heating.

[0124] 4. Real-time feedback and security protection Throughout the startup process, the diagnostic unit continuously monitors plasma density, electron temperature, and NBI beam penetration depth. The central control unit adjusts the NBI and ECRH parameters in real time based on this data. For example, when a sudden 20% drop in density is detected, the system temporarily reduces the NBI energy by 10 keV within 5 ms, while simultaneously slightly increasing the ECRH power by 0.2 MW to maintain heating and prevent discharge breakup.

[0125] 5. Steady-state switching and current maintenance When the plasma current reaches 1 ~ MA (target value), the system determines that the startup phase is complete and automatically switches to steady-state operation mode. At this time, the NBI energy is maintained at 80~120 keV, and the power is 3~MW; the ECRH power is adjusted to 1.5~MW, together maintaining the stability of the plasma current.

[0126] Implementation: 6: Extended applications for large-scale installations The aforementioned collaborative feedback mechanism also applies to larger-scale tokamak devices. For example, in a plasma volume of 200 m³... 3 In a device with a longitudinal field of 5~T, a safe start-up of a 2~MA plasma current can be achieved by proportionally increasing the NBI power (to 6~MW) and ECRH power (to 4~MW) and employing the same density sensing and energy dynamic adjustment logic. This demonstrates that the present invention has good scalability and engineering applicability.

[0127] This invention is not only applicable to the startup of tokamak devices, but can also be extended to other devices that require plasma startup and heating, such as: Stellarator: Similar to tokamak, stellarators also require external heating and electric current to start and maintain the plasma. The combined start-up method and dynamically adjusted neutral beam energy technique of this invention can be applied to the start-up process of stellarators.

[0128] Other magnetic confinement fusion devices: The technical solution of this invention can be extended to other types of magnetic confinement fusion devices to optimize the start-up process and reduce construction costs.

[0129] This invention, through a combination of neutral beam injection (NBI) and electron cyclotron wave heating (ECRH), along with a feedback control mechanism for dynamically adjusting the neutral beam injection energy, can significantly optimize the tokamak startup process and achieve the following technical effects: Reduced volt-second consumption: Through the synergistic effect of neutral beam injection and electron cyclotron wave heating, this invention can rapidly establish and maintain plasma current, reducing dependence on changes in the magnetic flux of the central solenoid (CS coil). Traditional ohmic heating start-up methods require large magnetic flux changes, resulting in high volt-second consumption. This invention, however, significantly reduces volt-second consumption through the combination of neutral beam injection and electron cyclotron wave heating. Specifically, neutral beam injection provides additional current drive and heating in the initial start-up phase, while electron cyclotron wave heating further stabilizes the current as plasma density increases, thereby reducing dependence on the CS coil and lowering volt-second consumption.

[0130] Improved startup efficiency: This invention dynamically adjusts the neutral beam injection energy to ensure that the neutral beam energy is not excessively high and penetrates the plasma under low-density conditions, while providing sufficient energy to effectively heat the plasma under high-density conditions. This dynamic adjustment mechanism significantly improves energy transfer efficiency, enabling the plasma current to establish and stabilize rapidly. Compared with traditional ohmic heating or single electron cyclotron heating, the combined startup method of this invention can achieve stable plasma operation in a shorter time, thus improving startup efficiency.

[0131] Enhanced Plasma Stability: This invention effectively enhances plasma stability through the synergistic effect of neutral beam injection and electron cyclotron wave heating. In the initial startup phase, neutral beam injection provides additional heating and current drive, helping to rapidly establish the plasma current. As plasma density increases, electron cyclotron wave heating gradually becomes dominant, further stabilizing the plasma. Furthermore, a feedback control mechanism monitors plasma density and temperature in real time, dynamically adjusting the power of neutral beam injection and electron cyclotron wave heating to ensure plasma stability throughout the startup process.

[0132] To prevent device damage, this invention uses a real-time feedback control mechanism to dynamically adjust the neutral beam injection energy, ensuring that the energy does not become too high and penetrate the plasma under low-density conditions, thus avoiding damage to the tokamak's first wall. Traditional neutral beam injection systems are prone to penetrating low-density plasma due to excessive energy during initial startup, leading to device wall damage. This invention, by dynamically adjusting the neutral beam energy, ensures it operates within a safe range, effectively extending the device's lifespan and reducing fusion reactor maintenance costs.

[0133] Reducing the construction cost of future fusion reactors: The start-up method of this invention reduces the volt-second consumption, thereby decreasing the demand for magnetic flux changes in the CS coil and significantly reducing its size. Since the CS coil is one of the largest and heaviest components in a tokamak device, its reduction directly reduces the overall size and weight of the fusion reactor. This not only simplifies the structural design of the fusion reactor but also reduces material usage and manufacturing complexity, thus significantly lowering the construction cost of future fusion reactors. Furthermore, a smaller CS coil also means lower operating and maintenance costs, further improving the economics of the fusion reactor.

[0134] Applicable to various tokamak devices: The technical solution of this invention is not only applicable to existing tokamak devices, but also to future large-scale fusion reactor designs. By dynamically adjusting the neutral beam injection energy and electron cyclotron wave heating power, this invention can adapt to the start-up requirements of different tokamak devices, and has broad application prospects.

[0135] In summary, the plasma discharge start-up method and system for a tokamak device of the present invention, through a combination of neutral beam injection and electron cyclotron wave heating, combined with dynamic energy regulation and real-time feedback control, achieves significant technical effects: 1) Startup efficiency is significantly improved, startup time is reduced by more than 30%, and volt-second consumption is reduced by 25%; 2) Energy utilization efficiency was optimized, with neutral beam energy deposition efficiency improved by 35% and electron cyclotron resonance heating efficiency reaching 85%; 3) Enhanced plasma stability, increased current build-up rate by 30%, and reduced parameter fluctuations by 25%; 4) The device provides significant protection, completely preventing damage to the first wall caused by neutral beam penetration; 5) The system has a high degree of automation, achieving intelligent control throughout the entire process and reducing manual intervention by 80%. The promotion and application of this invention will effectively advance the fusion energy research and development process and provide reliable technical support for the construction and operation of future fusion reactors.

[0136] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above system can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.

[0137] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.

[0138] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed in this invention can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for each specific application, but such implementations should not be considered beyond the scope of this invention.

[0139] In the embodiments provided by this invention, it should be understood that the disclosed devices / terminals and methods can be implemented in other ways. For example, the device / terminal embodiments described above are merely illustrative. For instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between devices or units may be electrical, mechanical, or other forms.

[0140] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0141] Furthermore, the functional units in the various embodiments of the present invention can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0142] If the integrated module / unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, all or part of the processes in the methods of the above embodiments can also be implemented by a computer program instructing related hardware. The computer program can be stored in a computer-readable storage medium, and when executed by a processor, it can implement the steps of the various method embodiments described above. The computer program includes computer program code, which can be in the form of source code, object code, executable files, or certain intermediate forms. The computer-readable medium can include: any entity or device capable of carrying the computer program code, recording media, USB flash drives, portable hard drives, magnetic disks, optical disks, computer memory, read-only memory (ROM), random-access memory (RAM), electrical carrier signals, telecommunication signals, and software distribution media, etc. It should be noted that the content included in the computer-readable medium can be appropriately added or removed according to the requirements of legislation and patent practice in the jurisdiction. For example, in some jurisdictions, according to legislation and patent practice, computer-readable media do not include electrical carrier signals and telecommunication signals.

[0143] This application is described with reference to flowchart illustrations and / or block diagrams of methods, apparatus, and computer program products according to embodiments of this application. It will be understood that each block of the flowchart illustrations and / or block diagrams, and combinations of blocks in the flowchart illustrations and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, special-purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, generate instructions for implementing the flowchart... Figure 1 One or more processes and / or boxes Figure 1 A device that provides the functions specified in one or more boxes.

[0144] These computer program instructions may also be stored in a computer-readable storage medium that can direct a computer or other programmable data processing device to function in a particular manner, such that the instructions stored in the computer-readable storage medium produce an article of manufacture including instruction means, which are implemented in a process Figure 1One or more processes and / or boxes Figure 1 The function specified in one or more boxes.

[0145] These computer program instructions may also be loaded onto a computer or other programmable data processing equipment to cause a series of operational steps to be performed on the computer or other programmable equipment to produce a computer-implemented process, thereby providing instructions that execute on the computer or other programmable equipment for implementing the process. Figure 1 One or more processes and / or boxes Figure 1 The steps of the function specified in one or more boxes.

[0146] The above content is only for illustrating the technical concept of the present invention and should not be construed as limiting the scope of protection of the present invention. Any modifications made to the technical solution based on the technical concept proposed in this invention shall fall within the scope of protection of the claims of this invention.

Claims

1. A method for starting up plasma discharge in a tokamak device, characterized in that, Includes the following steps: Initial plasma is generated using a plasma pre-ionization system; Neutral particles are injected into the initial plasma using a neutral beam injection system, and the energy of the neutral beam injection is dynamically adjusted based on the real-time monitored plasma density. Microwave energy is injected into the plasma through an electron cyclotron wave heating system, driving electrons to move along the direction of the magnetic field to generate plasma current, thereby initiating plasma discharge.

2. The plasma discharge start-up method for a tokamak device according to claim 1, characterized in that, The plasma pre-ionization system generates initial plasma using radio frequency pre-ionization or laser pre-ionization.

3. The plasma discharge start-up method for a tokamak device according to claim 1, characterized in that, The energy of the neutral beam injection is dynamically adjustable within the range of 20~40keV.

4. The plasma discharge start-up method for a tokamak device according to claim 1, characterized in that, The injection angle of the neutral beam injection is 30°~45°.

5. The plasma discharge start-up method for a tokamak device according to claim 1, characterized in that, The injection power of the neutral beam injection is 0.5~2MW.

6. The plasma discharge start-up method for a tokamak device according to claim 1, characterized in that, The microwave frequencies for the electron cyclotron wave heating are 105 GHz and 140 GHz, which are adjusted according to the plasma density and magnetic field strength.

7. The plasma discharge start-up method for a tokamak device according to claim 1, characterized in that, The microwave power of the electron cyclotron wave heating is 1~3MW.

8. The plasma discharge start-up method for a tokamak device according to claim 1, characterized in that, After plasma discharge is initiated, the plasma parameters and neutral beam penetration depth are monitored in real time by the diagnostic system. The monitoring data is fed back to the neutral beam injection system and the electron cyclotron heating system. The neutral beam injection system adjusts the injection energy according to the feedback data, and the electron cyclotron heating system adjusts the heating parameters according to the feedback data.

9. The plasma discharge start-up method for a tokamak device according to claim 8, characterized in that, The plasma parameters include plasma density, and the plasma density is monitored within a range of 10. 18 m -3 ~10 20 m -3 .

10. The plasma discharge start-up method for a tokamak device according to claim 8, characterized in that, In step S4, the plasma parameters include plasma temperature, and the plasma temperature monitoring range is 1~10keV.

11. The plasma discharge start-up method for a tokamak device according to claim 8, characterized in that, Once the plasma current reaches the preset value and the plasma parameters stabilize, the neutral beam injection system and the electron cyclotron wave heating system optimize and adjust the parameters according to operational requirements to maintain continuous and stable plasma operation.

12. A plasma discharge start-up system for a tokamak device, characterized in that, include: The pre-ionization module is used to generate initial plasma through the plasma pre-ionization system; An injection module is used to inject neutral particles into the initial plasma via a neutral beam injection system, wherein the energy of the neutral beam injection is dynamically adjusted according to the plasma density monitored in real time. The heating module is used to inject microwave energy into the plasma through an electron cyclotron wave heating system, driving electrons to move along the magnetic field direction to generate plasma current.

13. The plasma discharge start-up system for a tokamak device according to claim 12, characterized in that, The plasma pre-ionization system is either a radio frequency pre-ionization system or a laser pre-ionization system, and the diagnostic system includes a density sensor, a temperature sensor, and a penetration depth detector.

14. The plasma discharge start-up system for a tokamak device according to claim 12, characterized in that, The neutral beam injection system has an injection energy adjustment range of 20~40keV, an injection angle of 30°~45°, and an injection power adjustment range of 0.5~2MW.

15. The plasma discharge start-up system for a tokamak device according to claim 12, characterized in that, The microwave frequency of the electron cyclotron wave heating system is 105 GHz or 140 GHz, and the injection power adjustment range is 1~3 MW.

16. The plasma discharge start-up system for a tokamak device according to claim 12, characterized in that, The system also includes: The diagnostic module is used to monitor plasma parameters and neutral beam penetration depth in real time through the diagnostic system, and to feed the monitoring data back to the neutral beam injection system and the electron cyclotron heating system. The control module is used to enable the neutral beam injection system to adjust the injection energy based on feedback data, and to enable the electron cyclotron wave heating system to adjust the heating parameters based on feedback data.

17. The plasma discharge start-up system for a tokamak device according to claim 16, characterized in that, The control module has built-in preset low-density threshold, preset high-density threshold and preset target value, and can generate adjustment instructions based on the comparison results of the monitoring data of the diagnostic system and each preset value.

18. The plasma discharge start-up system for a tokamak device according to claim 16, characterized in that, Once the plasma current reaches the preset value and the plasma parameters stabilize, the neutral beam injection system and the electron cyclotron wave heating system optimize and adjust the parameters according to operational requirements to maintain continuous and stable plasma operation.

19. A computer-readable storage medium for storing one or more programs, characterized in that, The one or more programs include instructions that, when executed by a computing device, cause the computing device to perform the method of any one of claims 1 to 11.

20. A computing device, characterized in that, include: One or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, the one or more programs including steps for performing the method of any one of claims 1 to 11.

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