Photomask defect pattern correction method and corresponding device
By constructing multiple correction patterns of different sizes in the optical proximity effect correction model, the exposure process of photomask is simulated, which solves the problems of long processing time and low efficiency in photomask defect pattern correction and achieves more efficient defect pattern correction.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-09
- Publication Date
- 2026-03-10
AI Technical Summary
In existing technologies, the methods for correcting photomask defect patterns through OPC processing can easily lead to the emergence of new defect patterns, resulting in long processing times and low efficiency.
By constructing multiple correction patterns of different sizes in the optical proximity effect correction model, the exposure process of photomask is simulated. Multiple correction patterns are used to correct the simulated defect pattern, reducing the number of corrections and improving efficiency.
This reduces the number of photomask corrections, improving the efficiency and time of defect pattern processing.
Smart Images
Figure CN121634683A_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of semiconductor technology, and more specifically, to a method and apparatus for correcting defect patterns in photomasks. Background Technology
[0002] Photomasks are pattern masters primarily used in the photolithography process of microelectronics manufacturing. They transfer designed circuit patterns onto substrates or wafers in downstream industries. After exposure, defect patterns may be generated on the photomask, requiring correction. Related technologies use OPC (Optical Proximity Correction) to correct these defects. However, this method is prone to generating new defect patterns, necessitating multiple processing steps, resulting in longer processing times and lower efficiency. Summary of the Invention
[0003] The purpose of this disclosure is to provide a method and apparatus for correcting defect patterns in photomasks, so as to solve the technical problems existing in the related art.
[0004] To achieve the above objectives, in a first aspect, this disclosure provides a method for correcting photomask defect patterns, comprising: Obtain the layout data of the defect pattern, wherein the defect pattern is a pattern obtained by exposing a photomask; Based on the layout data, multiple correction patterns corresponding to the defect pattern are constructed in the optical proximity effect correction model, wherein each correction pattern has a different size, and the optical proximity effect correction model is determined by the exposure parameters of the photomask. The process of exposing the photomask and generating the defect pattern is simulated using the optical proximity effect correction model to obtain a simulated defect pattern. The simulated defect pattern is corrected using the multiple correction patterns to obtain multiple correction results.
[0005] Optionally, the simulated defect pattern is multiple, and the process of simulating the exposure of the photomask and generating the defect pattern through the optical proximity effect correction model to obtain the simulated defect pattern includes: The process of exposing the photomask and generating the defect pattern is simulated by the optical proximity effect correction model to obtain a simulated defect sub-pattern, and the position information of the simulated defect sub-pattern relative to the optical proximity effect correction model is determined. Centered on the location information, within a first preset range in the horizontal direction and a second preset range in the vertical direction perpendicular to the horizontal plane, a plurality of simulated defect patterns corresponding to the defect pattern are determined, wherein the number of simulated defect patterns is less than the number of correction patterns.
[0006] Optionally, determining the plurality of simulated defect patterns corresponding to the defect pattern includes: Extract multiple initial simulated defect patterns corresponding to the aforementioned defect pattern; The multiple simulated defect patterns are obtained by processing multiple initial simulated defect patterns in at least one of the following ways: Remove the wire diameter defect pattern from the initial simulated defect pattern; When the area of the initial simulated defect pattern is smaller than the preset area, the area of the initial simulated defect pattern is increased.
[0007] Optionally, the optical proximity effect correction model includes a photomask model, and the step of constructing multiple correction patterns corresponding to the defect pattern in the optical proximity effect correction model based on the layout data includes: Based on the layout data and the preset size threshold, multiple correction patterns corresponding to the defect pattern are constructed on a preset area of the cutting channel region of the photomask model. The preset area is obtained by dividing the cutting channel region and is different from the verification pattern region in the photomask model.
[0008] Optionally, the plurality of correction patterns are evenly arranged on the preset area, and the sum of the side lengths of each column of correction patterns and the sum of the gap lengths between two adjacent correction patterns is less than the width of the cutting channel area.
[0009] Optionally, the simulated defect pattern is multiple, and the step of correcting the simulated defect pattern using the multiple correction patterns includes: The plurality of simulated defect patterns are placed into the preset regions corresponding to the plurality of correction patterns in the optical proximity effect correction model; The optical proximity effect correction model simulates the exposure process of the plurality of correction patterns in the photomask to correct the simulated defect patterns on the preset area.
[0010] Optionally, the method further includes: Among the multiple correction results, the target correction pattern corresponding to the target correction result that meets the preset conditions is determined; The target correction pattern is verified, and when the verification result meets the pattern quality requirements, the target correction pattern is determined as the correction pattern of the photomask.
[0011] In a second aspect, this disclosure provides a device for correcting photomask defect patterns, including a data acquisition module, a pattern construction module, a simulation module, and a correction module; The data acquisition module is used to acquire the layout data of the defect pattern, wherein the defect pattern is a pattern obtained by exposing a photomask; The pattern construction module is used to construct multiple correction patterns corresponding to the defect pattern in an optical proximity effect correction model based on the layout data. Each correction pattern has a different size. The optical proximity effect correction model is determined based on the photolithography data corresponding to the defect pattern generated by exposing the photomask. The simulation module is used to simulate the process of generating the defect pattern by exposing the photomask using the optical proximity effect correction model, thereby obtaining a simulated defect pattern. The correction module is used to correct the simulated defect pattern using the plurality of correction patterns.
[0012] Optionally, the simulated defect pattern is multiple, and the simulation module includes: The simulated exposure processing module is used to simulate the exposure processing of the photomask and the generation of the defect pattern through the optical proximity effect correction model, to obtain a simulated defect sub-pattern, and to determine the position information of the simulated defect sub-pattern relative to the optical proximity effect correction model. The first determining module is used to determine, with the location information as the center, a plurality of simulated defect patterns corresponding to the defect pattern within a first preset range in the horizontal direction and a second preset range in the vertical direction perpendicular to the horizontal plane, wherein the number of simulated defect patterns is less than the number of corrective patterns.
[0013] Optionally, the first determining module includes: A pattern capture module is used to capture multiple initial simulated defect patterns corresponding to the defect pattern; The processing module is configured to process multiple initial simulated defect patterns in at least one of the following ways to obtain the multiple simulated defect patterns: removing wire diameter defect patterns from the initial simulated defect patterns; and increasing the area of the initial simulated defect patterns when the area of the initial simulated defect patterns is less than a preset area.
[0014] Optionally, the optical proximity effect correction model includes a photomask model, and the pattern building module is used for: Based on the layout data and the preset size threshold, multiple correction patterns corresponding to the defect pattern are constructed on a preset area of the cutting channel region of the photomask model. The preset area is obtained by dividing the cutting channel region and is different from the verification pattern region in the photomask model.
[0015] Optionally, the plurality of correction patterns are evenly arranged on the preset area, and the sum of the side lengths of each column of correction patterns and the sum of the gap lengths between two adjacent correction patterns is less than the width of the cutting channel area.
[0016] Optionally, the simulated defect patterns are multiple, and the correction module includes: An insertion module is used to insert the plurality of simulated defect patterns into a preset region in the optical proximity effect correction model that corresponds to the plurality of correction patterns. The correction submodule is used to simulate exposure processing of the plurality of correction patterns in the photomask in the optical proximity effect correction model to correct the simulated defect pattern on the preset area.
[0017] Optionally, the device further includes: The second determining module is used to determine, among the plurality of correction results, the target correction pattern corresponding to the target correction result that meets the preset conditions; The verification module is used to verify the target correction pattern, and when the verification result meets the pattern quality requirements, the target correction pattern is determined as the correction pattern of the photomask.
[0018] Thirdly, this disclosure provides a computer-readable storage medium having a computer program stored thereon that, when executed by a processor, implements the steps of any of the methods provided in the first aspect of this disclosure.
[0019] Fourthly, this disclosure provides an electronic device, comprising: A memory on which computer programs are stored; A processor for executing the computer program in the memory to implement the steps of any of the methods provided in the first aspect of this disclosure.
[0020] Fifthly, this disclosure provides a computer program product, including a computer program that, when executed by a processor, implements the steps of any of the methods provided in the first aspect of this disclosure.
[0021] The above technical solution constructs multiple correction patterns corresponding to the defect pattern within an optical proximity effect correction model based on the layout data of the defect pattern. This model simulates the exposure process of the photomask and the generation of the defect pattern, resulting in a simulated defect pattern. These simulated defect patterns are then corrected using these multiple correction patterns, yielding multiple correction results. Each correction pattern has a different size, and the optical proximity effect correction model is determined by the exposure parameters used for photomask exposure. By constructing multiple correction patterns within the optical proximity effect correction model and simultaneously correcting the simulated defect pattern using these patterns, the number of photomask corrections can be reduced, thereby increasing the time required for defect pattern correction and improving processing efficiency.
[0022] Other features and advantages of this disclosure will be described in detail in the following detailed description section. Attached Figure Description
[0023] The accompanying drawings are provided to further illustrate the present disclosure and form part of the specification. They are used together with the following detailed description to explain the present disclosure, but do not constitute a limitation thereof. In the drawings: Figure 1 This is a schematic diagram of a photomask in related technologies.
[0024] Figure 2 This is a schematic diagram of the defect pattern after the photomask has been exposed in related technologies.
[0025] Figure 3 This is a schematic diagram of the defect pattern that appears after the photomask is corrected in related technologies.
[0026] Figure 4 This is a schematic diagram illustrating a method for correcting a photomask defect pattern according to an exemplary embodiment of the present disclosure.
[0027] Figure 5 This is a schematic diagram illustrating a plurality of modified patterns uniformly arranged according to an exemplary embodiment of the present disclosure.
[0028] Figure 6 This is a schematic diagram illustrating multiple corrected patterns after a simulated defect pattern has been inserted, according to an exemplary embodiment of the present disclosure.
[0029] Figure 7 This is a schematic diagram illustrating the determination of a simulated defect sub-pattern according to an exemplary embodiment of the present disclosure.
[0030] Figure 8 This is a schematic diagram illustrating the determination of relative positional information of defect patterns according to an exemplary embodiment of the present disclosure.
[0031] Figure 9 This is a schematic diagram illustrating a defect present in an initial simulated defect pattern according to an exemplary embodiment of the present disclosure.
[0032] Figure 10 This is a schematic diagram illustrating a defect pattern after multiple correction patterns have been corrected according to an exemplary embodiment of the present disclosure.
[0033] Figure 11 This is a schematic diagram illustrating an apparatus for correcting photomask defect patterns according to an exemplary embodiment of the present disclosure.
[0034] Figure 12 This is a block diagram illustrating an electronic device according to an exemplary embodiment. Detailed Implementation
[0035] The specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit this disclosure.
[0036] In a photomask, such as Figure 1 As shown, the image includes a cutting track area 1 and a pattern library 2 disposed in the cutting track area 1. The pattern library 2 can be used to monitor and verify the pattern obtained after the photomask is exposed. Furthermore, measurements or image acquisition can be performed at the photomask manufacturing plant based on the pattern library 2. The same photomask can be used for photolithography processes of different products and different layers, thereby shortening the cycle time for photomask Run OPC (Execution of OPC) and JDV (Job Data Verification), while also saving on photomask manufacturing costs.
[0037] like Figure 2 As shown, the inventors discovered that after the related technology exposes the photomask and obtains the defect pattern 3, it manufactures a second version of the photomask using the OPC method and corrects the defect pattern 3 using the second version of the photomask. However, when the second version of the photomask is exposed again, a new defect pattern 4 may appear, requiring the OPC method to be used again to adjust the new defect pattern 4.
[0038] Therefore, when debugging defect patterns using the OPC method, it is necessary to expose a new photomask, which may result in new defect patterns, leading to longer processing time and lower efficiency in defect pattern processing.
[0039] In view of this, the present disclosure provides a method and apparatus for correcting photomask defect patterns to solve the technical problems existing in the above-mentioned related technologies.
[0040] like Figure 4 As shown, Figure 4 This is a schematic diagram illustrating a method for correcting photomask defect patterns according to an exemplary embodiment of the present disclosure, with reference to... Figure 4 ,include: S401: Obtain the layout data of the defect pattern, wherein the defect pattern is a pattern obtained by exposing a photomask; S402: Based on the layout data, construct multiple correction patterns corresponding to the defect pattern in the optical proximity effect correction model, wherein each correction pattern has a different size, and the optical proximity effect correction model is determined by the exposure parameters of the photomask. S403: Simulate the process of exposing the photomask and generating the defect pattern using the optical proximity effect correction model to obtain a simulated defect pattern; S404: The simulated defect pattern is corrected using the multiple correction patterns to obtain multiple correction results.
[0041] The above technical solution constructs multiple correction patterns corresponding to the defect pattern within an optical proximity effect correction model based on the layout data of the defect pattern. This model simulates the exposure process of the photomask and the generation of the defect pattern, resulting in a simulated defect pattern. These simulated defect patterns are then corrected using these multiple correction patterns, yielding multiple correction results. Each correction pattern has a different size, and the optical proximity effect correction model is determined by the exposure parameters used for photomask exposure. By constructing multiple correction patterns within the optical proximity effect correction model and simultaneously correcting the simulated defect pattern using these patterns, the number of photomask corrections can be reduced, the time required for defect pattern correction can be increased, and the processing efficiency of the defect pattern can be improved.
[0042] To enable those skilled in the art to better understand the method for correcting photomask defect patterns provided in this disclosure, the above steps are illustrated in detail below.
[0043] For example, a defect pattern can be a pattern obtained after exposing a photomask. Exposure involves transferring a designed pattern onto a photomask substrate coated with photoresist using a photolithography machine. During photomask exposure, the pattern structure on the photomask can transmit light from the photomask to the photoresist through a specific optical system, thus achieving image transfer. However, if a defect pattern appears after photomask exposure, it needs to be corrected to ensure the yield of the lithographically processed product and the efficiency of its electrical features. Layout data (GDS, Graphic Data System) can be a standard format file in the field of automation and can be used to characterize the layout and circuit connections on the chip corresponding to the photomask.
[0044] For example, an optical proximity correction model can be used to improve the resolution of photolithography processes in semiconductor device manufacturing. It can be determined based on the exposure parameters used to expose the photomask. In other words, this optical proximity correction model can simulate the exposure process of a photomask.
[0045] Furthermore, in the optical proximity effect correction model, multiple correction patterns corresponding to the defect pattern can be constructed based on the pattern data. These multiple correction patterns can be used to correct the defect pattern, thereby reducing the time required to correct the defect pattern and improving the efficiency of the correction.
[0046] In one possible manner, the optical proximity effect correction model includes a photomask model, wherein constructing multiple correction patterns corresponding to the defect pattern in the optical proximity effect correction model based on the layout data includes: Based on the layout data and the preset size threshold, multiple correction patterns corresponding to the defect pattern are constructed on a preset area of the cutting channel region of the photomask model. The preset area is obtained by dividing the cutting channel region and is different from the verification pattern region in the photomask model.
[0047] It should be understood that in the optical proximity effect correction model, including the simulated photomask model, when determining multiple correction patterns based on layout data, multiple correction patterns corresponding to the defect pattern can be constructed in a preset region on the cut area of the photomask model using the relationship between the layout data and a preset size threshold. The preset size threshold can be a threshold of different sizes set according to user needs, and the preset size threshold corresponding to each correction pattern can be different. The preset region can be the area where the correction pattern is set, and this preset region is not duplicated with the verification pattern area. Each correction pattern can then be obtained by multiplying the layout data by its corresponding preset size threshold. That is to say, in the optical proximity effect correction model, when the defect pattern is exposed using multiple correction patterns, the correction effect of each correction pattern is different.
[0048] Therefore, when a defect pattern is corrected using multiple correction patterns, the time required to correct the defect pattern using OPC can be reduced, thereby improving the efficiency of defect pattern correction.
[0049] In one possible manner, the plurality of correction patterns are evenly arranged on the preset area, and the sum of the side lengths of each column of correction patterns and the sum of the gap lengths between two adjacent correction patterns is less than the width of the cutting channel area.
[0050] It should be understood that when the preset area includes multiple correction patterns, these multiple correction patterns can be referenced as follows: Figure 5 The arrangement is uniform as shown. Figure 5 Figure a shows a diagram with three rows and nine columns. Each row contains nine correction patterns 5, and the nine correction patterns 5 in the first row can be used to place multiple simulated defect patterns. Each column contains three correction patterns 5. In each column, the correction patterns 5 in the second and third rows can be used to place correction patterns 5 of different sizes, which can be used to correct the simulated defect patterns in the first row. The side length of each correction pattern 5 can be the same or different. For example, the side length of each correction pattern 5 can be 8 μm, the gap between two adjacent correction patterns 5 in the same column can be 1 μm, and the gap between two adjacent correction patterns 5 in the same row can be 2 μm. This embodiment of the present disclosure does not specifically limit the specific gaps. Figure b can be an enlarged schematic diagram of two correction patterns 5 in Figure a.
[0051] Furthermore, in the multiple correction patterns, the sum of the side lengths of each column of correction patterns and the sum of the gaps between two adjacent correction patterns are less than the width of the cutting area. Moreover, these multiple correction patterns are set away from the verification pattern area in the photomask model, thereby reducing the correction time for defect patterns and improving the efficiency of defect pattern correction.
[0052] For example, the process of exposing the photomask and generating defect patterns can then be simulated using an optical proximity effect correction model to obtain simulated defect patterns.
[0053] In some possible embodiments, the simulated defect patterns are multiple, and the process of simulating the exposure of the photomask and generating the defect patterns using the optical proximity effect correction model to obtain the simulated defect patterns includes: The process of exposing the photomask and generating the defect pattern is simulated by the optical proximity effect correction model to obtain a simulated defect sub-pattern, and the position information of the simulated defect sub-pattern relative to the optical proximity effect correction model is determined. Centered on the location information, within a first preset range in the horizontal direction and a second preset range in the vertical direction perpendicular to the horizontal plane, a plurality of simulated defect patterns corresponding to the defect pattern are determined, wherein the number of simulated defect patterns is less than the number of correction patterns.
[0054] It should be understood that the exposure process of a photomask and the generation of defect patterns can be simulated in the optical proximity effect correction model, thereby obtaining simulated defect sub-patterns. Then, the positional information of this simulated defect sub-pattern relative to the optical proximity effect correction model can be determined. Based on this positional information, multiple simulated defect patterns corresponding to this defect pattern can be determined within a first preset numerical range in the horizontal direction and a second preset data range in the vertical direction perpendicular to the horizontal plane. The first and second preset numerical ranges can be the same or different; for example, the first preset numerical range can be 0-3.5µm, and the second preset numerical range can also be 0-3.5µm. Furthermore, the number of simulated defect patterns is less than the number of correction patterns. Figure 6 As shown, when multiple correction patterns are arranged evenly in three rows, for each column of correction patterns, a simulated defect sub-pattern can be placed in the first row, and correction patterns of different sizes can be placed in the corresponding photomask models in the second and third rows. Then, by exposing the correction pattern, the defect pattern can be corrected.
[0055] For example, such as Figure 6-8 As shown, when a photomask is exposed using an optical proximity effect correction model to generate a defect pattern, as... Figure 7 As shown, simulated defect sub-patterns can be found on the chip simulated in the optical proximity effect correction model. Among them, Figure 7 The elliptical pattern 6 can be a magnified version of the simulated defect sub-pattern. Then, the positional information of this simulated defect sub-pattern relative to the optical proximity effect correction model can be determined, resulting in... Figure 8 The pattern shown is then used as the center. Multiple simulated defect patterns are then extracted within a 3.5µm range horizontally and vertically (3.5µm) from this location information, and these simulated defect patterns are then placed into... Figure 6 In the first row of multiple correction patterns, the correction patterns in the second and third rows of the optical proximity effect correction model can then be used to correct the correction patterns in the first row, thereby reducing the processing time for defect patterns and improving the processing efficiency of defect patterns.
[0056] In possible ways, determining the plurality of simulated defect patterns corresponding to the defect patterns includes: Extract multiple initial simulated defect patterns corresponding to the aforementioned defect pattern; The multiple simulated defect patterns are obtained by processing multiple initial simulated defect patterns in at least one of the following ways: Remove the wire diameter defect pattern from the initial simulated defect pattern; When the area of the initial simulated defect pattern is smaller than the preset area, the area of the initial simulated defect pattern is increased.
[0057] It should be understood that when determining multiple simulated defect patterns, an initial simulated defect pattern corresponding to the location information of the defect pattern can be extracted first. In the initial simulated defect pattern, the defect line diameter may be caused by the extracted edge, or the area of the extracted region may be smaller than the preset area defect. Furthermore, this defect may cause new defects during future photolithography processes due to insufficient process windows. For example, such as... Figure 9 As shown, defect line diameters appear on the edges within the ellipse in the figure, or the area captured is 0.5µm smaller than the originally set area at the edge. This preset area can be the user-desired capture area. Therefore, defect line diameters in the initial simulated defect pattern can be removed, or if the area of the initial simulated defect pattern is smaller than the preset area, the area of the initial simulated defect pattern can be enlarged, thereby preventing the formation of new defects during the photolithography process. Furthermore, it can prevent the formation of new defect patterns when correcting the defect pattern.
[0058] For example, multiple correction patterns can then be exposed separately in the optical proximity effect correction model to correct the simulated defect pattern and obtain multiple correction results.
[0059] In one possible manner, the simulated defect pattern is multiple, and the step of correcting the simulated defect pattern using the multiple correction patterns includes: The plurality of simulated defect patterns are placed into the preset regions corresponding to the plurality of correction patterns in the optical proximity effect correction model; The optical proximity effect correction model simulates the exposure process of the plurality of correction patterns in the photomask to correct the simulated defect patterns on the preset area.
[0060] It should be understood that when correcting a simulated defect pattern using multiple correction patterns, multiple simulated defect patterns can be placed at the positions corresponding to the correction patterns in a preset area. Then, the defect pattern can be corrected by exposing the correction patterns.
[0061] For example, such as Figure 6 and Figure 10 As shown, Figure 6 The first row can contain multiple simulated defect patterns, while the second and third rows can contain multiple correction patterns. Figure 10 The patterns appearing in the second and third rows can be the patterns obtained after modification.
[0062] By using multiple correction patterns to correct defective patterns, the correction time for defective patterns can be reduced, and the correction efficiency can be improved.
[0063] In some possible ways, the method further includes: Among the multiple correction results, the target correction pattern corresponding to the target correction result that meets the preset conditions is determined; The target correction pattern is verified, and when the verification result meets the pattern quality requirements, the target correction pattern is determined as the correction pattern of the photomask.
[0064] It should be understood that the correction result can be the pattern quality obtained by correcting the defective pattern. After obtaining multiple correction results, these results can be compared, and the correction result that meets the preset conditions can be determined as the target correction pattern. The preset conditions can be that the correction of the defective pattern reaches a threshold or is within a threshold range; however, this embodiment does not specifically limit this. After determining the target correction pattern, the correction pattern can be set on a photomask, and the photomask can be re-exposed to obtain the verification result of the defective pattern. When the verification result meets the pattern quality requirements, the target correction pattern is determined as the correction pattern of the photomask.
[0065] By setting multiple correction patterns in an optical proximity effect correction model to correct defect patterns, and comparing multiple correction results, the correction results that meet preset conditions are verified. The verified target correction pattern is then determined as the correction pattern for the photomask. This reduces the number of photomask corrections, improves the time required for defect pattern correction, and increases the processing efficiency of defect patterns. This method can also be applied to design for manufacturability or immersion lithography.
[0066] Based on the same concept, this embodiment also provides a device for correcting photomask defect patterns, referring to... Figure 11 , Figure 11 This is a schematic diagram illustrating a photomask defect pattern correction device 1100 according to an exemplary embodiment of the present disclosure, as shown below. Figure 11 As shown, it includes a data acquisition module 1101, a pattern construction module 1102, a simulation module 1103, and a correction module 1104; The data acquisition module 1101 is used to acquire the layout data of the defect pattern, wherein the defect pattern is a pattern obtained by exposing a photomask. The pattern construction module 1102 is used to construct multiple correction patterns corresponding to the defect pattern in an optical proximity effect correction model based on the layout data. Each correction pattern has a different size. The optical proximity effect correction model is determined based on the photolithography data corresponding to the defect pattern generated by exposing the photomask. The simulation module 1103 is used to simulate the process of generating the defect pattern by exposing the photomask through the optical proximity effect correction model, so as to obtain a simulated defect pattern. The correction module 1104 is used to correct the simulated defect pattern using the plurality of correction patterns.
[0067] Optionally, the simulated defect patterns are multiple, and the simulation module 1103 includes: The simulated exposure processing module is used to simulate the exposure processing of the photomask and the generation of the defect pattern through the optical proximity effect correction model, to obtain a simulated defect sub-pattern, and to determine the position information of the simulated defect sub-pattern relative to the optical proximity effect correction model. The first determining module is used to determine, with the location information as the center, a plurality of simulated defect patterns corresponding to the defect pattern within a first preset range in the horizontal direction and a second preset range in the vertical direction perpendicular to the horizontal plane, wherein the number of simulated defect patterns is less than the number of corrective patterns.
[0068] Optionally, the first determining module includes: A pattern capture module is used to capture multiple initial simulated defect patterns corresponding to the defect pattern; The processing module is configured to process multiple initial simulated defect patterns in at least one of the following ways to obtain the multiple simulated defect patterns: removing wire diameter defect patterns from the initial simulated defect patterns; and increasing the area of the initial simulated defect patterns when the area of the initial simulated defect patterns is less than a preset area.
[0069] Optionally, the optical proximity effect correction model includes a photomask model, and the pattern building module 1102 is used for: Based on the layout data and the preset size threshold, multiple correction patterns corresponding to the defect pattern are constructed on a preset area of the cutting channel region of the photomask model. The preset area is obtained by dividing the cutting channel region and is different from the verification pattern region in the photomask model.
[0070] Optionally, the plurality of correction patterns are evenly arranged on the preset area, and the sum of the side lengths of each column of correction patterns and the sum of the gap lengths between two adjacent correction patterns is less than the width of the cutting channel area.
[0071] Optionally, the simulated defect patterns are multiple, and the correction module 1104 includes: An insertion module is used to insert the plurality of simulated defect patterns into a preset region in the optical proximity effect correction model that corresponds to the plurality of correction patterns. The correction submodule is used to simulate exposure processing of the plurality of correction patterns in the photomask in the optical proximity effect correction model to correct the simulated defect pattern on the preset area.
[0072] Optionally, the device further includes: The second determining module is used to determine, among the plurality of correction results, the target correction pattern corresponding to the target correction result that meets the preset conditions; The verification module is used to verify the target correction pattern, and when the verification result meets the pattern quality requirements, the target correction pattern is determined as the correction pattern of the photomask.
[0073] Regarding the apparatus in the above embodiments, the specific manner in which each module performs its operation has been described in detail in the embodiments related to the method, and will not be elaborated upon here.
[0074] Based on the same concept, this embodiment also provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the steps of the photomask defect pattern correction method disclosed in this embodiment.
[0075] Based on the same concept, this embodiment also provides an electronic device, including: A memory on which computer programs are stored; A processor is configured to execute the computer program in the memory to implement the steps of the photomask defect pattern correction method disclosed in this embodiment.
[0076] Based on the same concept, this embodiment also provides a computer program product, including a computer program that, when executed by a processor, implements the steps of the photomask defect pattern correction method disclosed in this embodiment.
[0077] Figure 12 This is a block diagram illustrating an electronic device 1200 according to an exemplary embodiment. For example... Figure 12 As shown, the electronic device 1200 may include: a processor 1201 and a memory 1202. The electronic device 1200 may also include one or more of a multimedia component 1203, an input / output (I / O) interface 1204, and a communication component 1205.
[0078] The processor 1201 controls the overall operation of the electronic device 1200 to complete all or part of the steps in the aforementioned method for correcting photomask defect patterns. The memory 1202 stores various types of data to support the operation of the electronic device 1200. This data may include, for example, instructions for any application or method operating on the electronic device 1200, and application-related data such as contact data, sent and received messages, images, audio, video, etc. The memory 1202 can be implemented by any type of volatile or non-volatile storage device or a combination thereof, such as Static Random Access Memory (SRAM), Electrically Erasable Programmable Read-Only Memory (EEPROM), Erasable Programmable Read-Only Memory (EPROM), Programmable Read-Only Memory (PROM), Read-Only Memory (ROM), magnetic storage, flash memory, magnetic disk, or optical disk. Multimedia component 1203 may include a screen and an audio component. The screen may be, for example, a touchscreen, and the audio component is used to output and / or input audio signals. For example, the audio component may include a microphone for receiving external audio signals. The received audio signals may be further stored in memory 1202 or transmitted via communication component 1205. The audio component also includes at least one speaker for outputting audio signals. I / O interface 1204 provides an interface between processor 1201 and other interface modules, such as a keyboard, mouse, buttons, etc. These buttons may be virtual or physical buttons. Communication component 1205 is used for wired or wireless communication between the electronic device 1200 and other devices. Wireless communication may include Wi-Fi, Bluetooth, Near Field Communication (NFC), 2G, 3G, or 4G, or a combination of these. Therefore, the corresponding communication component 1205 may include a Wi-Fi module, a Bluetooth module, or an NFC module.
[0079] In an exemplary embodiment, the electronic device 1200 may be implemented by one or more application-specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field-programmable gate arrays (FPGAs), controllers, microcontrollers, microprocessors, or other electronic components to perform the above-described method for correcting photomask defect patterns.
[0080] In another exemplary embodiment, a computer-readable storage medium including program instructions is also provided, which, when executed by a processor, implement the steps of the photomask defect pattern correction method described above. For example, the computer-readable storage medium may be the memory 1202 including program instructions, which may be executed by the processor 1201 of the electronic device 1200 to complete the photomask defect pattern correction method described above.
[0081] In another exemplary embodiment, a computer program product is also provided, which includes a computer program executable by a processor, which, when executed by the processor, implements the steps of the above-described method for correcting photomask defect patterns.
[0082] The preferred embodiments of this disclosure have been described in detail above with reference to the accompanying drawings. However, this disclosure is not limited to the specific details of the above embodiments. Within the scope of the technical concept of this disclosure, various simple modifications can be made to the technical solutions of this disclosure, and these simple modifications all fall within the protection scope of this disclosure.
[0083] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, this disclosure will not describe the various possible combinations separately.
[0084] Furthermore, various different embodiments of this disclosure can be combined in any way, as long as they do not violate the spirit of this disclosure, they should also be regarded as the content disclosed in this disclosure.
Claims
1. A method of modifying a defect pattern of a photomask, characterized by, The method comprises the following steps: obtaining layout data of a defect pattern, the defect pattern being a pattern obtained by exposing a photomask; constructing a plurality of correction patterns corresponding to the defect pattern in an optical proximity effect correction model according to the layout data, wherein each correction pattern has a different size, and the optical proximity effect correction model is determined by exposure parameters of the exposure process of the photomask; simulating the process of exposing the photomask and generating the defect pattern by the optical proximity effect correction model to obtain a simulated defect pattern; correcting the simulated defect pattern by the plurality of correction patterns respectively to obtain a plurality of correction results.
2. The method of claim 1, wherein the method further comprises: The simulated defect pattern is multiple, and the step of simulating the process of exposing the photomask and generating the defect pattern by the optical proximity effect correction model to obtain a simulated defect pattern comprises the following steps: simulating the process of exposing the photomask and generating the defect pattern by the optical proximity effect correction model to obtain a simulated defect sub-pattern, and determining position information of the simulated defect sub-pattern relative to the optical proximity effect correction model; determining a plurality of simulated defect patterns corresponding to the defect pattern in a first numerical preset range in the horizontal direction and a second numerical preset range in the vertical direction perpendicular to the horizontal plane with the position information as the center, wherein the number of the simulated defect patterns is less than the number of the correction patterns.
3. The method for correcting photomask defect patterns according to claim 2, characterized in that, The step of determining the plurality of simulated defect patterns corresponding to the defect pattern comprises the following steps: cutting a plurality of initial simulated defect patterns corresponding to the defect pattern; processing the plurality of initial simulated defect patterns by at least one of the following ways to obtain the plurality of simulated defect patterns: eliminating line diameter defect patterns in the initial simulated defect patterns; when the area of the initial simulated defect pattern is less than a preset area, enlarging the area of the initial simulated defect pattern.
4. The method of claim 1, wherein the mask defect pattern is a pattern of a mask defect. The optical proximity effect correction model comprises a photomask model, and the step of constructing a plurality of correction patterns corresponding to the defect pattern in the optical proximity effect correction model according to the layout data comprises the following steps: constructing a plurality of correction patterns corresponding to the defect pattern on a preset area of a cutting path region of the photomask model according to the layout data and a preset size threshold, wherein the preset area is obtained by dividing the cutting path region, and the preset area is different from a verification pattern region in the photomask model.
5. The method of claim 4, wherein the step of modifying the defect pattern of the photomask is performed by a process selected from the group consisting of: laser ablation, ion beam etching, and reactive ion etching. The plurality of correction patterns are uniformly arranged on the preset area, and the sum of the side length of each column of correction patterns and the sum of the gap length between adjacent two correction patterns are less than the width of the cutting path region.
6. The method of claim 4, wherein the step of modifying the defect pattern of the photomask is performed by a process selected from the group consisting of: laser ablation, ion beam etching, and reactive ion etching. The simulated defect pattern is multiple, and the step of correcting the simulated defect pattern by the plurality of correction patterns comprises the following steps: placing the plurality of simulated defect patterns on the preset area corresponding to the plurality of correction patterns in the optical proximity effect correction model; simulate exposure processing on the plurality of correction patterns in the photomask in the optical proximity effect correction model to correct the simulated defect pattern on the preset region.
7. The method of claim 1, wherein the method further comprises: forming a photoresist layer on the photo mask; and exposing the photoresist layer to light through the photo mask. The method further comprises: In the plurality of correction results, a target correction result corresponding to a target correction pattern that meets a preset condition is determined. The target correction pattern is verified, and when a verification result meets a pattern quality requirement, the target correction pattern is determined as a correction pattern of the photomask.
8. A device for correcting defect patterns in a photomask, characterized in that, comprise a data acquisition module, a pattern construction module, a simulation module, and a correction module; The data acquisition module is configured to acquire layout data of a defect pattern, the defect pattern being a pattern obtained by exposing a photomask; The pattern construction module is configured to construct a plurality of correction patterns corresponding to the defect pattern in an optical proximity effect correction model according to the layout data, wherein each correction pattern has a different size, and the optical proximity effect correction model is determined according to lithography data corresponding to the defect pattern generated by exposing the photomask; The simulation module is configured to simulate a process of generating the defect pattern by exposing the photomask through the optical proximity effect correction model to obtain a simulated defect pattern; The correction module is configured to correct the simulated defect pattern through the plurality of correction patterns.
9. A computer readable storage medium having stored thereon a computer program, characterized in that, The program is executed by a processor to implement the steps of the method of any one of claims 1-7.
10. An electronic device, comprising: comprise: a memory having a computer program stored thereon; a processor configured to execute the computer program in the memory to implement the steps of the method of any one of claims 1-7.
11. A computer program product comprising a computer program, characterized in that, The computer program is executed by a processor to implement the steps of the method of any one of claims 1-7. The computer program is executed by a processor to implement the steps of the method of any one of claims 1-7.