Method, device and equipment for realizing miniaturization of electronic optical system of klystron

Abstract

The invention provides a method, a device and equipment for realizing miniaturization of an electronic optical system of a klystron, which can be applied to the technical field of vacuum electronic devices. The method for realizing miniaturization of the electron optical system of the klystron comprises the following steps: acquiring a first target parameter of an electron gun and an initial permanent magnet focusing system; according to the first magnetic induction intensity, the magnetic induction intensity area range of the initial permanent magnet focusing system is adjusted, and a first magnetic induction intensity curve is obtained; adjusting the initial structure parameters by simulating a working state of embedding an electron gun corresponding to the initial structure parameters into the middle permanent magnet focusing system to obtain a second magnetic induction intensity curve; and embedding the electron gun corresponding to the target structure parameter corresponding to the second magnetic induction intensity curve into the target permanent magnet focusing system to obtain the electron optical system of the target speed regulation tube.

Description

Technical Field

[0001] This disclosure relates to the field of vacuum electronic device technology, and more specifically to a method, apparatus and device for miniaturizing an electron optical system for a klystron. Background Technology

[0002] Due to its advantages such as high output power and high reliability, the klystron has gradually developed into an important microwave power source and is widely used in important fields such as scientific research and industrial production. The electron-optical system is one of the core components of the klystron, and it plays a decisive role in the performance of the klystron, such as its size, weight, power, and gain.

[0003] In realizing the above-mentioned inventive concept, the inventors discovered that in related technologies, the electron gun assembly in the klystron is located outside the permanent magnet focusing system, resulting in a large axial dimension of the klystron and thus a large volume of the klystron. Summary of the Invention

[0004] In view of the above problems, this disclosure provides a method, apparatus and device for miniaturizing an electron optical system for a klystron.

[0005] According to a first aspect of this disclosure, a method is provided for miniaturizing an electron-optical system for a klystron, the klystron including a permanent magnet focusing system, wherein an electron gun is embedded within the permanent magnet focusing system; the method includes: acquiring first target parameters of the electron gun and an initial permanent magnet focusing system, wherein the first target parameters include electrode parameters, operating parameters, and a first electrical boundary of the electron gun, the electrode parameters and operating parameters of the electron gun corresponding to preset conditions for the electron beam of the klystron, and the initial permanent magnet focusing system being a cylindrical permanent magnet focusing system, which, according to the scaling principle, does not contain an electron gun; and adjusting the magnetic induction intensity region of the initial permanent magnet focusing system according to a first magnetic induction intensity to obtain a first magnetic induction intensity curve, wherein the first magnetic induction intensity is obtained when the electron beam is a Brillouin current. The working parameters of the electron gun are obtained under the following conditions: The working state of the electron gun corresponding to the initial structural parameters is simulated by embedding it into the intermediate permanent magnet focusing system. The initial structural parameters are adjusted to obtain the second magnetic induction intensity curve. The intermediate permanent magnet focusing system is characterized as the permanent magnet focusing system corresponding to the first magnetic induction intensity curve. The initial structural parameters are parameters that match the first electric boundary and the first magnetic induction intensity curve. The electron gun corresponding to the target structural parameters corresponding to the second magnetic induction intensity curve is embedded into the target permanent magnet focusing system to obtain the electron optical system of the target speed-regulating tube. The target structural parameters include the structural parameters of the electron gun obtained after adjusting the initial structural parameters and the structural parameters of the target permanent magnet focusing system. The target permanent magnet focusing system is characterized as the permanent magnet focusing system corresponding to the second magnetic induction intensity curve.

[0006] According to embodiments of this disclosure, by simulating the working state of embedding an electron gun corresponding to the initial structural parameters into an intermediate permanent magnet focusing system, adjusting the initial structural parameters, and obtaining a second magnetic induction intensity curve, the following steps are taken: obtaining the initial structural parameters of the electron gun corresponding to the first electric boundary based on the first electric boundary, wherein the initial structural parameters include the boundary parameters of the magnetic material of the electron gun; simulating the working state of embedding the boundary parameters of the magnetic material of the electron gun into the intermediate permanent magnet focusing system to obtain a third magnetic induction intensity curve; and obtaining a second magnetic induction intensity curve that satisfies a first preset condition by adjusting the initial structural parameters based on the first magnetic induction intensity curve.

[0007] According to an embodiment of this disclosure, the first preset condition is characterized as follows: the magnetic induction intensity of the second magnetic induction intensity curve on the cathode surface is equal to the magnetic induction intensity of the first magnetic induction intensity curve on the cathode surface, and the magnetic induction intensity threshold of the second magnetic induction intensity curve in the transition region is equal to the magnetic induction intensity threshold of the first magnetic induction intensity curve in the transition region.

[0008] According to embodiments of this disclosure, an electron gun corresponding to the target structural parameters corresponding to the second magnetic induction intensity curve is embedded into a target permanent magnet focusing system to obtain an electron optical system for a target klystron. This includes: determining the adjusted initial structural parameters corresponding to the second magnetic induction intensity curve as the target structural parameters based on the second magnetic induction intensity curve; embedding the electron gun corresponding to the target structural parameters into the target permanent magnet focusing system to obtain an electron optical system for an intermediate klystron; performing a magnetic field test on the intermediate klystron's electron optical system to obtain a magnetic induction intensity curve corresponding to the intermediate klystron's electron optical system; and determining the intermediate klystron's electron optical system as the target klystron's electron optical system if the magnetic induction intensity curve corresponding to the intermediate klystron's electron optical system is the same as the second magnetic induction intensity curve.

[0009] According to embodiments of this disclosure, the method further includes: obtaining a second magnetic induction intensity based on a first magnetic induction intensity when the electron beam is a partially shielded current; calculating a shielding coefficient based on the first and second magnetic induction intensities; and obtaining a third magnetic induction intensity based on the shielding coefficient, the second magnetic induction intensity, and the electrode parameters of the electron gun, wherein the third magnetic induction intensity is characterized as the magnetic induction intensity of the electron beam on the cathode surface when the electron beam is a partially shielded current and the magnetic induction intensity of the electron beam in the interaction region is equal to the second magnetic induction intensity.

[0010] According to an embodiment of this disclosure, adjusting the magnetic induction region of the initial permanent magnet focusing system based on the first magnetic induction intensity to obtain a first magnetic induction intensity curve includes: adjusting the magnetic induction region of the initial permanent magnet focusing system to obtain an intermediate permanent magnet focusing system; obtaining an intermediate magnetic induction intensity curve by simulating the magnetic field of the intermediate permanent magnet focusing system based on the intermediate permanent magnet focusing system; and determining the intermediate magnetic induction intensity curve as the first magnetic induction intensity curve when the intermediate magnetic induction intensity curve meets a second preset condition.

[0011] According to embodiments of this disclosure, when the intermediate magnetic induction intensity curve meets a second preset condition, determining the intermediate magnetic induction intensity curve as the first magnetic induction intensity curve includes: performing a combined processing of the intermediate magnetic induction intensity curve and the electrostatic trajectory of the electron beam to obtain the motion trajectory of the electron beam, wherein the motion trajectory of the electron beam is characterized as the motion trajectory of the electron beam emitted by the electron gun in the intermediate magnetic induction intensity curve; when the intermediate magnetic induction intensity curve meets the second preset condition, determining the intermediate magnetic induction intensity curve as the first magnetic induction intensity curve, wherein the second preset condition is characterized as the magnetic induction intensity of the intermediate magnetic induction intensity curve on the cathode surface being equal to the third magnetic induction intensity, the motion trajectory of the electron beam meeting the third preset condition, the magnetic induction intensity of the intermediate magnetic induction intensity curve in the interaction region being equal to the second magnetic induction intensity, and the change of the magnetic induction intensity of the intermediate magnetic induction intensity curve in the collecting electrode region within a predetermined axial distance threshold to a first predetermined intensity threshold. According to embodiments of this disclosure, the method further includes: determining the operating parameters of the electron gun based on preset conditions for the electron beam from the klystron, wherein the operating parameters include the operating voltage of the electron gun, the operating current of the electron gun, the cathode current emission density of the electron gun, and the beam waist radius of the electron beam emitted by the electron gun; determining the electrode parameters of the electron gun based on the operating parameters of the electron gun using the Pierce gun synthesis calculation method, wherein the electrode parameters include the cathode curvature radius of the electron gun, the cathode cross-sectional radius of the electron gun, the anode radius of the electron gun, the anode axial coordinate of the electron gun, the anode hole radius of the electron gun, and the anode-cathode distance of the electron gun; performing particle simulation based on the electrode parameters of the electron gun to obtain the first electrical boundary of the electron gun; and determining the initial permanent magnet focusing system based on the cylindrical permanent magnet focusing system using the scaling principle.

[0012] The second aspect of this disclosure provides an apparatus for miniaturizing an electron optical system for a klystron, the klystron including a permanent magnet focusing system, wherein an electron gun is embedded within the permanent magnet focusing system; comprising: an acquisition module for acquiring first target parameters of the electron gun and an initial permanent magnet focusing system, wherein the first target parameters include electrode parameters, operating parameters, and a first electrical boundary of the electron gun, the electrode parameters and operating parameters of the electron gun corresponding to preset conditions for the electron beam of the klystron, and the initial permanent magnet focusing system being a cylindrical permanent magnet focusing system, which, according to the scaling principle, does not contain an electron gun; and a first adjustment module for adjusting the magnetic induction intensity region of the initial permanent magnet focusing system according to a first magnetic induction intensity to obtain a first magnetic induction intensity curve, wherein the first magnetic induction intensity is under the condition that the electron beam is a Brillouin current. The second adjustment module is obtained based on the working parameters of the electron gun; it is used to adjust the initial structural parameters by simulating the working state of the electron gun corresponding to the initial structural parameters embedded in the intermediate permanent magnet focusing system, and to obtain the second magnetic induction intensity curve. The intermediate permanent magnet focusing system is characterized as the permanent magnet focusing system corresponding to the first magnetic induction intensity curve, and the initial structural parameters are parameters that match the first electric boundary and the first magnetic induction intensity curve. The first obtaining module is used to embed the electron gun corresponding to the target structural parameters corresponding to the second magnetic induction intensity curve into the target permanent magnet focusing system to obtain the electron optical system of the target speed regulating tube. The target structural parameters include the structural parameters of the electron gun obtained after adjusting the initial structural parameters and the structural parameters of the target permanent magnet focusing system. The target permanent magnet focusing system is characterized as the permanent magnet focusing system corresponding to the second magnetic induction intensity curve.

[0013] A third aspect of this disclosure provides an electronic device comprising: one or more processors; and a memory for storing one or more programs, wherein when the one or more programs are executed by the one or more processors, the one or more processors perform the methods described above.

[0014] A fourth aspect of this disclosure also provides a computer-readable storage medium having executable instructions stored thereon, which, when executed by a processor, cause the processor to perform the methods described above.

[0015] The fifth aspect of this disclosure also provides a computer program product, including a computer program that, when executed by a processor, implements the above-described method.

[0016] According to the method, apparatus, and electronic device for miniaturizing a klystron disclosed herein, by acquiring the electrode parameters, operating parameters, first electrical boundary, and initial permanent magnet focusing system of the electron gun, and based on the operating parameters of the electron gun when the electron beam is a Brillouin current, a first magnetic flux density is obtained. The magnetic flux density region of the initial permanent magnet focusing system is adjusted based on the first magnetic flux density, and a first magnetic flux density curve corresponding to the adjusted initial permanent magnet focusing system is obtained. Then, the initial structural parameters of the electron gun are determined based on the first electrical boundary. The electron gun corresponding to the initial structural parameters is then embedded into the intermediate permanent magnet focusing system through simulation. The system adjusts the structural parameters of the electron gun and the intermediate permanent magnet focusing system, and then simulates the working state of embedding the electron gun corresponding to the adjusted initial structural parameters into the intermediate permanent magnet focusing system to obtain the second magnetic induction intensity curve. The electron gun corresponding to the target structural parameters corresponding to the second magnetic induction intensity curve is then embedded into the target permanent magnet focusing system to obtain the electron optical system of the target klystron. This realizes the embedding of the electron gun component into the permanent magnet focusing system, thereby shortening the axial dimension of the target klystron and miniaturizing the target klystron, so as to facilitate the application of miniaturized target klystrons in Ka and above bands in airborne and spaceborne environments. Attached Figure Description

[0017] The foregoing contents, as well as other objects, features, and advantages of this disclosure, will become clearer from the following description of embodiments with reference to the accompanying drawings, in which:

[0018] Figure 1 This illustration schematically depicts an application scenario of a method for miniaturizing an electron optical system for a klystron according to an embodiment of the present disclosure.

[0019] Figure 2 A flowchart illustrating a method for miniaturizing an electron optical system for a klystron according to an embodiment of the present disclosure is shown schematically.

[0020] Figure 3 A schematic diagram illustrating the electrical boundary and electrostatic trajectory of an electron gun according to an embodiment of the present disclosure is shown.

[0021] Figure 4 The illustration schematically shows a cross-sectional view of a uniform permanent magnet focusing system for a klystron according to an embodiment of the present disclosure;

[0022] Figure 5 The schematic diagram illustrates the magnetic field distribution under a uniform permanent magnet focusing system in which the electron gun according to an embodiment of the present disclosure is not embedded;

[0023] Figure 6 The schematic diagram illustrates the trajectory of an electron beam according to an embodiment of the present disclosure under the action of an electron gun not embedded in a uniform permanent magnet focusing system;

[0024] Figure 7 The schematic diagram illustrates the magnetic field distribution of an electron gun embedded in a uniform permanent magnet focusing system according to an embodiment of the present disclosure;

[0025] Figure 8 The diagram illustrates the magnetic flux density distribution along the z-axis of the electron beam according to embodiments of the present disclosure in cases where it is not embedded in a permanent magnet focusing system and when it is embedded in a focusing system.

[0026] Figure 9 The schematic diagram illustrates the trajectory of an electron beam according to an embodiment of the present disclosure as an electron gun is embedded in a uniform permanent magnet focusing system;

[0027] Figure 10 This schematically illustrates a structural block diagram of an apparatus for miniaturizing an electro-optical system for realizing a klystron according to an embodiment of the present disclosure;

[0028] Figure 11 A block diagram of an electronic device for miniaturizing an electro-optical system for a klystron, according to an embodiment of the present disclosure, is shown schematically. Detailed Implementation

[0029] The embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the present disclosure for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.

[0030] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.

[0031] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.

[0032] When using expressions such as "at least one of A, B and C", they should generally be interpreted in accordance with the meaning that is commonly understood by those skilled in the art (e.g., "a system having at least one of A, B and C" should include, but is not limited to, a system having A alone, a system having B alone, a system having C alone, a system having A and B, a system having A and C, a system having B and C, and / or a system having A, B and C, etc.).

[0033] In the technical solution disclosed herein, the user information (including but not limited to user personal information, user image information, user device information, such as location information) and data (including but not limited to data used for analysis, stored data, and displayed data) involved are all information and data authorized by the user or fully authorized by all parties. Furthermore, the collection, storage, use, processing, transmission, provision, disclosure, and application of related data all comply with relevant laws, regulations, and standards, necessary confidentiality measures have been taken, and they do not violate public order and good morals. Corresponding operation entry points are provided for users to choose to authorize or refuse.

[0034] Due to its significant advantages such as high output power and high reliability, the klystron has become an important microwave power source and is widely used in various technological fields. In recent years, scientists have been committed to developing millimeter-wave-based electronic systems and devices; therefore, developing high-power, miniaturized millimeter-wave klystrons is a current research focus. The electron-optical system is one of the core components of the klystron, playing a decisive role in its performance indicators.

[0035] However, due to the structural design of existing electro-optical systems, the electron gun assembly is located outside the permanent magnet focusing system, which prevents further miniaturization of the klystron and limits its application scenarios. During the research and development process, researchers discovered that the location of the electron gun assembly outside the permanent magnet focusing system in related technologies results in a large axial dimension of the klystron, leading to a large overall size.

[0036] In view of this, embodiments of the present disclosure provide a method for miniaturizing an electron optical system for a klystron, characterized by comprising:

[0037] Figure 1 The illustration schematically depicts an application scenario of a method for miniaturizing an electron optical system for a klystron according to an embodiment of the present disclosure.

[0038] like Figure 1As shown, the application scenario according to this embodiment may include a first terminal device 101, an object to be operated on 102, and a testing device 103. The first terminal device 101 is used to process the target object 102 according to its performance requirements. The target object 102 may be an electro-optical system of a klystron.

[0039] Users can use the first terminal device 101 to interact with the object to be operated 102 and the test device 103 to obtain structural parameters and other parameters corresponding to the object to be operated.

[0040] The testing device 103 can be a device for testing the magnetic field of the object to be operated 102, such as processing the object to be operated 102 (for example only). The testing device 103 can analyze and process the test results and other data, and compare the processed results with the simulation results obtained by the first terminal device 101 and provide feedback.

[0041] It should be noted that the method for miniaturizing a klystron provided in this embodiment can generally be executed by the first terminal device 101. Correspondingly, the apparatus for miniaturizing a klystron provided in this embodiment can generally be housed in the first terminal device 101. The method for miniaturizing a klystron provided in this embodiment can also be executed by a terminal device or a cluster of terminal devices that is different from the first terminal device 101 and capable of communicating with the test device 103 and / or the object to be operated 102. Correspondingly, the apparatus for miniaturizing a klystron provided in this embodiment can also be housed in a terminal device or a cluster of terminal devices that is different from the first terminal device 101 and capable of communicating with the test device 103 and / or the object to be operated 102.

[0042] It should be understood that Figure 1 The number of radar devices, objects to be observed, and receivers shown is merely illustrative. Depending on the implementation requirements, any number of radar devices, objects to be observed, and receivers can be included.

[0043] The following will be based on Figure 1 The described scene, through Figures 2-9 A method for miniaturizing an electron optical system for a klystron, according to a disclosed embodiment, will be described in detail.

[0044] Figure 2 A flowchart illustrating a method for miniaturizing an electron optical system for a klystron according to an embodiment of the present disclosure is shown schematically.

[0045] like Figure 2 As shown, the method for miniaturizing the electron optical system of the klystron in this embodiment includes operations S210 to S240.

[0046] In operation S210, the first target parameters of the electron gun and the initial permanent magnet focusing system are acquired.

[0047] According to embodiments of this disclosure, the first target parameters include the electrode parameters, operating parameters, and first electrical boundary of the electron gun, and the electrode parameters and operating parameters of the electron gun correspond to the preset conditions of the klystron for electron injection.

[0048] According to embodiments of this disclosure, the preset conditions for electronic injection can be determined in advance based on the design requirements of electronic injection during research and development, and different design requirements can be applied in different scenarios.

[0049] According to embodiments of this disclosure, the initial permanent magnet focusing system is based on a cylindrical permanent magnet focusing system, which, based on the scaling principle, does not contain an electron gun structure.

[0050] According to embodiments of this disclosure, a cylindrical permanent magnet focusing system may include a uniform permanent magnet focusing system, a periodic permanent magnet focusing system, and a single-guide permanent magnet focusing system, but is not limited to the above-mentioned permanent magnet focusing systems. The initial permanent magnet focusing system may be determined from a plurality of alternative cylindrical permanent magnet focusing systems.

[0051] In operation S220, the range of the magnetic induction intensity region of the initial permanent magnet focusing system is adjusted according to the first magnetic induction intensity to obtain the first magnetic induction intensity curve.

[0052] According to embodiments of this disclosure, the first magnetic flux density is obtained based on the operating parameters of the electron gun when the electron injection is a Brillouin flow.

[0053] According to an embodiment of the present disclosure, the first magnetic induction intensity can be calculated according to formula (1), which is shown below.

[0054] (1)

[0055] Among them, B b This can be characterized as the first magnetic induction intensity. It can be characterized as the dielectric constant in a vacuum. It can be characterized as the electron-to-mass ratio, I t The operating current of the electron gun can be represented by U0, and the operating voltage of the electron gun can be represented by r. b It can be characterized as the equilibrium radius of the electron beam emitted by the electron gun within the interaction region.

[0056] According to embodiments of this disclosure, the magnetic induction intensity range of the initial permanent magnet focusing system is adjusted based on the first magnetic induction intensity, that is, the sensitive size of the initial permanent magnet focusing system is adjusted. The effect of adjusting the sensitive size of the initial permanent magnet focusing system can be achieved by adjusting structural parameters that affect the magnetic induction intensity of the initial permanent magnet focusing system, such as the size and spacing of the permanent magnet and the pure iron.

[0057] According to an embodiment of this disclosure, after adjusting the range of magnetic induction intensity region of the initial permanent magnet focusing system, the adjusted initial permanent magnet focusing system is simulated to obtain a first magnetic induction intensity curve corresponding to the adjusted initial permanent magnet focusing system. The first magnetic induction intensity curve is characterized as a magnetic induction intensity curve distributed along the z-axis.

[0058] In operation S230, the working state of embedding the electron gun corresponding to the initial structural parameters into the intermediate permanent magnet focusing system is simulated, and the initial structural parameters are adjusted to obtain the second magnetic induction intensity curve.

[0059] According to embodiments of this disclosure, the intermediate permanent magnet focusing system is characterized as a permanent magnet focusing system corresponding to the first magnetic induction intensity curve, and the initial structural parameters are parameters that match the first electric boundary and the first magnetic induction intensity curve.

[0060] According to embodiments of this disclosure, parameters of each initial structure of the electron gun to be embedded in the permanent magnet focusing system are designed based on the first electrical boundary. For example, the focusing electrode of the electron gun is made of pure iron, the metal ring material sealed and welded to the ceramic in the electron gun is Kovar alloy, and the cathode material used to emit electrons in the electron gun is porous tungsten sponge, etc., are the component system parameters of the electron gun.

[0061] According to the embodiments of this disclosure, the parameters of each initial structure of the electron gun to be embedded in the permanent magnet focusing system need to ensure that no arcing occurs between the electrodes of the electron gun and between the electron gun assembly and the permanent magnet focusing system. That is, the distance and shape between the electrodes in the electron gun need to be designed so that the electric field between the electrodes is within a predetermined electric field strength threshold range, thereby avoiding high voltage breakdown and arcing between the electrodes.

[0062] According to an embodiment of this disclosure, after adjusting the initial structural parameters of the electron gun, the working state of embedding the electron gun corresponding to the adjusted initial structural parameters into the target permanent magnet focusing system is simulated to obtain a second magnetic induction intensity curve.

[0063] In operation S240, an electron gun corresponding to the target structural parameters corresponding to the second magnetic induction intensity curve is embedded into the target permanent magnet focusing system to obtain the electron optical system of the target speed control tube.

[0064] According to embodiments of this disclosure, the target structural parameters include the structural parameters of the electron gun obtained after adjusting the initial structural parameters and the structural parameters of the target permanent magnet focusing system, wherein the target permanent magnet focusing system is characterized as a permanent magnet focusing system corresponding to the second magnetic induction intensity curve.

[0065] According to an embodiment of this disclosure, based on the obtained target structural parameters, an electron gun assembly corresponding to the target structural parameters is embedded into the target permanent magnet system by welding, and then processing and assembly operations are performed to obtain an electron optical system containing the electron gun assembly located in the permanent magnet focusing system, thereby obtaining a target klystron containing the above-mentioned electron optical system.

[0066] According to embodiments of this disclosure, by acquiring the electrode parameters, operating parameters, first electrical boundary, and initial permanent magnet focusing system of the electron gun, and based on the operating parameters of the electron gun when the electron beam is a Brillouin current, a first magnetic flux density is obtained. The magnetic flux density region of the initial permanent magnet focusing system is adjusted based on the first magnetic flux density, and a first magnetic flux density curve corresponding to the adjusted initial permanent magnet focusing system is obtained. Then, the initial structural parameters of the electron gun are determined based on the first electrical boundary. By simulating the working state of embedding the electron gun corresponding to the initial structural parameters into the intermediate permanent magnet focusing system, the structural parameters of the electron gun and the intermediate permanent magnet focusing system are adjusted. Again, the working state of embedding the electron gun corresponding to the adjusted initial structural parameters into the intermediate permanent magnet focusing system is simulated, resulting in a second magnetic flux density curve. The electron gun corresponding to the target structural parameters corresponding to the second magnetic flux density curve is embedded into the target permanent magnet focusing system, thus obtaining the electron optical system of the target klystron. This achieves the embedding of the electron gun assembly into the permanent magnet focusing system, thereby shortening the axial dimension of the target klystron and miniaturizing it. This facilitates the application of miniaturized target klystrons in Ka and higher bands to airborne and spaceborne environments.

[0067] According to embodiments of this disclosure, the above method further includes:

[0068] According to embodiments of this disclosure, the operating parameters of the electron gun are determined based on preset conditions for the electron beam from the klystron.

[0069] According to embodiments of this disclosure, the operating parameters include the operating voltage of the electron gun, the operating current of the electron gun, the cathode current emission density of the electron gun, and the injection waist radius of the electron beam emitted by the electron gun.

[0070] According to embodiments of this disclosure, since the klystron includes an electron gun assembly and a permanent magnet focusing system, the operating parameters of the klystron obtained from the predetermined power of the klystron are the operating parameters of the electron gun assembly, and the environmental characteristics of the klystron are the environmental characteristics of the permanent magnet focusing system.

[0071] According to embodiments of this disclosure, the electrode parameters of the electron gun are determined based on the operating parameters of the electron gun using the Pierce gun synthesis calculation method.

[0072] According to embodiments of this disclosure, electrode parameters may include parameters such as the cathode curvature radius, cathode cross-sectional radius, anode radius, anode axial coordinate, anode hole radius, and anode-cathode distance of the electron gun.

[0073] According to embodiments of this disclosure, particle simulation is performed based on the electrode parameters of the electron gun to obtain the first electric boundary of the electron gun.

[0074] According to an embodiment of this disclosure, particle simulation software is used to perform simulation optimization based on the electrode parameters of the electron gun to obtain the first electric boundary of the electron gun. The obtained first electric boundary satisfies the following conditions: the electrode withstand voltage of the electron gun corresponding to the first electric boundary is good, the laminar flow of the electron beam trajectory emitted from the cathode is good, and the beam waist radius of the electron beam is approximately equal to the equilibrium radius of the electron beam.

[0075] According to embodiments of this disclosure, an initial permanent magnet focusing system is determined based on a cylindrical permanent magnet focusing system using the principle of scaling.

[0076] According to embodiments of this disclosure, a suitable permanent magnet focusing system is selected from the alternative cylindrical permanent magnet focusing systems based on the high-frequency interaction length and the overall volume requirements of the klystron, and an initial permanent magnet focusing system is obtained using the scaling principle.

[0077] According to embodiments of this disclosure, the working parameters of the electron gun are determined based on the preset conditions of the klystron for the electron beam. Then, the electrode parameters of the electron gun are obtained based on the working parameters using the Pierce gun synthesis calculation method. Particle simulation is performed based on the electrode parameters of the electron gun to obtain the first electric boundary of the electron gun. Based on the cylindrical permanent magnet focusing system, the initial permanent magnet focusing system is determined using the scaling principle. This achieves the acquisition of relevant parameters of the electron gun components and the determination of the permanent magnet focusing system, so as to simulate the electron optical system of the target klystron based on the relevant parameters of the electron gun components and the initial permanent magnet focusing system.

[0078] According to an embodiment of this disclosure, a second magnetic induction intensity is obtained based on a first magnetic induction intensity when the electron beam is a partially shielded flow.

[0079] According to embodiments of this disclosure, the first magnetic flux density is the optimal magnetic flux density of the interaction region when the electron beam is a Brillouin current. However, in this case, the electron beam has no magnetic flux at the cathode surface and its stiffness is low. Since it is necessary to consider both the stiffness of the electron beam and the volume and weight of the permanent magnet focusing system, a second magnetic flux density of the interaction region is calculated based on the first magnetic flux density when the electron beam is a partially shielded current. The second magnetic flux density is the optimal magnetic flux density of the interaction region when the electron beam is a partially shielded current, in which case the electron beam has magnetic flux at the cathode surface and its stiffness is high. The second magnetic flux density can be 2 to 2.5 times the first magnetic flux density.

[0080] According to embodiments of this disclosure, the shielding coefficient is calculated based on a first magnetic induction intensity and a second magnetic induction intensity.

[0081] According to an embodiment of this disclosure, the shielding coefficient can be calculated according to formula (2), which is shown below.

[0082] (2)

[0083] Where K can be represented as the shielding coefficient, B b B0 can be characterized as the first magnetic flux density, and B0 can be characterized as the second magnetic flux density.

[0084] According to embodiments of this disclosure, a third magnetic induction intensity is obtained based on the shielding coefficient, the second magnetic induction intensity, and the electrode parameters of the electron gun.

[0085] According to embodiments of this disclosure, the third magnetic flux density is characterized as the magnetic flux density of the electron beam on the cathode surface when the electron beam is a partially shielded current and the magnetic flux density of the electron beam in the interaction region is equal to the second magnetic flux density.

[0086] According to an embodiment of this disclosure, the third magnetic induction intensity can be calculated according to formula (3), which is shown below.

[0087] (3)

[0088] Among them, B K It can be characterized as the third magnetic flux density. It can be characterized as the cathode cross-sectional radius.

[0089] According to embodiments of this disclosure, a second magnetic induction intensity is obtained by using a first magnetic induction intensity when the electron beam is a partially shielded flow. Then, a shielding coefficient is calculated based on the first and second magnetic induction intensities. Finally, a third magnetic induction intensity is obtained based on the shielding coefficient, the second magnetic induction intensity, and the operating parameters of the electron gun. This achieves the calculation of the third magnetic induction intensity while considering the stiffness and throughput of the electron beam, so as to determine whether the intermediate magnetic induction intensity curve meets the second preset condition based on the third magnetic induction intensity, thereby obtaining the first magnetic induction intensity curve.

[0090] According to embodiments of this disclosure, the magnetic induction region of the initial permanent magnet focusing system is adjusted based on a first magnetic induction intensity to obtain a first magnetic induction intensity curve, including:

[0091] According to embodiments of this disclosure, the range of magnetic induction intensity of the initial permanent magnet focusing system is adjusted to obtain an intermediate permanent magnet focusing system.

[0092] According to embodiments of this disclosure, the size and position of materials that can affect the magnetic field, such as the size and position of the permanent magnet in the initial permanent magnet focusing system, are adjusted to obtain an intermediate permanent magnet focusing system.

[0093] According to embodiments of this disclosure, an intermediate magnetic induction intensity curve is obtained by simulating the magnetic field of the intermediate permanent magnet focusing system.

[0094] According to embodiments of this disclosure, an intermediate permanent magnet focusing system is simulated to obtain an intermediate magnetic induction intensity curve corresponding to the intermediate permanent magnet focusing system.

[0095] According to an embodiment of this disclosure, if the intermediate magnetic induction intensity curve meets the second preset condition, the intermediate magnetic induction intensity curve is determined to be the first magnetic induction intensity curve.

[0096] According to an embodiment of this disclosure, if the intermediate magnetic induction intensity curve does not meet the second preset condition, the range of the magnetic induction region of the initial permanent magnet focusing system is adjusted until the intermediate magnetic induction intensity curve corresponding to the intermediate permanent magnet focusing system meets the second preset condition.

[0097] According to embodiments of this disclosure, an intermediate permanent magnet focusing system is obtained by adjusting the magnetic induction intensity range of the initial permanent magnet focusing system. Based on the intermediate permanent magnet focusing system, an intermediate magnetic induction intensity curve is obtained by simulating the magnetic field of the intermediate permanent magnet focusing system. When the intermediate magnetic induction intensity curve meets a second preset condition, the intermediate magnetic induction intensity curve is determined as the first magnetic induction intensity curve. This achieves optimization of the initial permanent magnet focusing system, so as to obtain the optimized first magnetic induction intensity curve and the target permanent magnet focusing system that is ultimately used to form the electron optical system.

[0098] According to embodiments of this disclosure, when the intermediate magnetic induction intensity curve meets a second preset condition, determining the intermediate magnetic induction intensity curve as the first magnetic induction intensity curve includes:

[0099] According to an embodiment of this disclosure, the intermediate magnetic induction intensity curve and the electrostatic trajectory of the electron beam are processed together to obtain the motion trajectory of the electron beam.

[0100] According to embodiments of this disclosure, the trajectory of the electron beam is characterized as the trajectory of the electron beam emitted by the electron gun in the intermediate magnetic induction intensity curve.

[0101] According to embodiments of this disclosure, the electrostatic trajectory of the electron beam can be obtained based on the first electric boundary, and the electrostatic trajectory of the electron beam can be characterized as the motion trajectory of the electron beam in the absence of a magnetic field.

[0102] According to embodiments of this disclosure, the motion trajectory of the electron beam obtained by simultaneously processing the intermediate magnetic induction intensity curve and the electrostatic trajectory of the electron beam can be characterized as the motion trajectory of the electron beam under the action of the magnetic field of the intermediate permanent magnet focusing system.

[0103] According to an embodiment of this disclosure, if the intermediate magnetic induction intensity curve meets the second preset condition, the intermediate magnetic induction intensity curve is determined to be the first magnetic induction intensity curve.

[0104] According to an embodiment of this disclosure, the second preset condition is characterized by the magnetic induction intensity of the intermediate magnetic induction intensity curve on the cathode surface being equal to the third magnetic induction intensity, the trajectory of the electron beam satisfying the third preset condition, the magnetic induction intensity of the intermediate magnetic induction intensity curve in the interaction region being equal to the second magnetic induction intensity, and the magnetic induction intensity of the intermediate magnetic induction intensity curve in the collecting electrode region changing to the first predetermined intensity threshold within a predetermined axial distance threshold.

[0105] According to embodiments of this disclosure, the second preset condition may include four preset sub-conditions. The first preset sub-condition may be characterized as the magnetic induction intensity of the intermediate magnetic induction intensity curve on the cathode surface being equal to the third magnetic induction intensity. The determination that the magnetic induction intensity of the intermediate magnetic induction intensity curve on the cathode surface is equal to the third magnetic induction intensity may have an error range of ±2%. The second preset sub-condition may be characterized as the trajectory of the electron beam satisfying the third preset condition. The third preset sub-condition may be characterized as the magnetic induction intensity of the intermediate magnetic induction intensity curve in the interaction region being equal to the second magnetic induction intensity. The determination that the magnetic induction intensity of the intermediate magnetic induction intensity curve in the interaction region is equal to the second magnetic induction intensity may have an error range of ±2%. The fourth preset sub-condition may be characterized as the magnetic induction intensity of the intermediate magnetic induction intensity curve in the collecting electrode region changing to a first predetermined intensity threshold within a predetermined axial distance threshold. The first predetermined intensity threshold may be characterized as the magnetic induction intensity being zero, that is, the magnetic induction intensity of the intermediate magnetic induction intensity curve in the collecting electrode region rapidly decreasing to zero, causing the electron beam to diverge rapidly.

[0106] According to embodiments of this disclosure, the third preset condition can be characterized as follows: in the trajectory of the electron beam, the radius of the electron beam when it enters the interaction zone from the transition zone is equal to the equilibrium radius, and the incident slope of the electron beam is zero. That is, the electron beam satisfies the optimal incident condition when it enters the interaction zone.

[0107] According to an embodiment of this disclosure, if the intermediate magnetic induction intensity curve meets the second preset condition, the intermediate magnetic induction intensity curve is determined to be the first magnetic induction intensity curve; otherwise, the initial permanent magnet focusing system is adjusted and optimized until the intermediate magnetic induction intensity curve meets the second preset condition.

[0108] According to embodiments of this disclosure, the first magnetic induction intensity curve shows a monotonically increasing trend in the cathode region and the transition region.

[0109] According to the embodiments of this disclosure, by performing a combined processing of the intermediate magnetic induction intensity curve and the electrostatic trajectory of the electron beam, the motion trajectory of the electron beam is obtained. According to the second preset condition, if the intermediate magnetic induction intensity curve satisfies all the sub-conditions in the second preset condition, the intermediate magnetic induction intensity curve is determined as the first magnetic induction intensity curve. This realizes the optimization and adjustment of the initial permanent magnet focusing system, and obtains the motion trajectory of the electron beam and the first magnetic induction intensity curve with small fluctuations, good laminar flow, high throughput and suitable filling ratio.

[0110] According to embodiments of this disclosure, by simulating the working state of embedding an electron gun corresponding to the initial structural parameters into an intermediate permanent magnet focusing system, adjusting the initial structural parameters, and obtaining a second magnetic induction intensity curve, including:

[0111] According to an embodiment of this disclosure, the initial structural parameters of the electron gun corresponding to the first electrical boundary are obtained based on the first electrical boundary.

[0112] According to embodiments of this disclosure, the initial structural parameters include the boundary parameters of the magnetic material of the electron gun.

[0113] According to embodiments of this disclosure, the initial structural parameters may further include the structural parameters of the initial permanent magnet focusing system.

[0114] According to embodiments of this disclosure, the structural parameters of the electron gun are designed and optimized based on the first electrical boundary to obtain the parameters of each initial structure of the electron gun to be embedded in the permanent magnet focusing system. The parameters of each initial structure of the electron gun satisfy that no arcing occurs between the electrodes of the electron gun or between the electron gun assembly and the permanent magnet focusing system.

[0115] According to an embodiment of this disclosure, the working state of embedding the boundary parameters of the magnetic material of the electron gun into the intermediate permanent magnet focusing system is simulated to obtain a third magnetic induction intensity curve.

[0116] According to embodiments of this disclosure, since the magnetic material of the electron gun embedded inside the permanent magnet focusing system can change the magnetic field distribution in the cathode region and the transition region, the boundary parameters of the magnetic material of the electron gun are written into the simulation software to simulate the working state of the electron gun containing magnetic material in the intermediate permanent magnet focusing system, and a third magnetic induction intensity curve corresponding to the electron gun containing magnetic material in the intermediate permanent magnet focusing system is obtained.

[0117] According to the embodiments of this disclosure, when the third magnetic induction intensity curve is compared with the first magnetic induction intensity curve, it can be seen that the two magnetic induction intensity curves completely overlap in the latter part of the transition region, the interaction region and the collecting pole region. However, the trend of the change of the third magnetic induction intensity curve in the first part of the transition region is not monotonically increasing, but rather decreasing first and then increasing. In addition, the magnetic induction intensity of the third magnetic induction intensity curve in the cathode region is not equal to the second magnetic induction intensity.

[0118] According to an embodiment of this disclosure, based on a first magnetic induction intensity curve, a second magnetic induction intensity curve that satisfies a first preset condition is obtained by adjusting the initial structural parameters.

[0119] According to an embodiment of this disclosure, based on the first magnetic induction intensity curve, the axial dimension of the Kovar ring welded to the focusing electrode and the radial dimension of the inner hole of the pole shoe at the end of the electron gun are adjusted in the initial structural parameters of the electron gun. Based on the adjusted initial structural parameters, a second magnetic induction intensity curve is obtained. It is determined whether the second magnetic induction intensity curve meets the first preset condition. If the second magnetic induction intensity curve does not meet the first preset condition, the initial structural parameters are further adjusted and optimized until a second magnetic induction intensity curve that meets the first preset condition is obtained.

[0120] According to embodiments of this disclosure, when adjusting the axial dimension of the Kovar ring welded to the focusing electrode and the radial dimension of the inner hole of the electron gun pole shoe in the initial structural parameters, it is necessary to keep other parameters in the initial structural parameters unchanged in order to adjust the distribution of the magnetic induction intensity curve in the cathode region and the transition region without changing the first electric boundary.

[0121] According to an embodiment of this disclosure, the first preset condition is characterized as follows: the magnetic induction intensity of the second magnetic induction intensity curve on the cathode surface is equal to the magnetic induction intensity of the first magnetic induction intensity curve on the cathode surface, and the magnetic induction intensity threshold of the second magnetic induction intensity curve in the transition region is equal to the magnetic induction intensity threshold of the first magnetic induction intensity curve in the transition region.

[0122] According to embodiments of this disclosure, the first preset condition may include two preset sub-conditions. The fifth preset sub-condition may be characterized as the magnetic induction intensity of the second magnetic induction intensity curve on the cathode surface being equal to the magnetic induction intensity of the first magnetic induction intensity curve on the cathode surface. The sixth preset sub-condition may be characterized as the magnetic induction intensity threshold of the second magnetic induction intensity curve in the transition region being equal to the magnetic induction intensity threshold of the first magnetic induction intensity curve in the transition region. The magnetic induction intensity threshold may be characterized as the definite integral of the square of the magnetic induction intensity along the axis of symmetry in the transition region, that is, the definite integrals of the squares of the magnetic induction intensity of the first and second magnetic induction intensity curves along the axis of symmetry in the transition region are equal. The equality of the definite integrals may have an error, with an error range of ±0.5%.

[0123] According to an embodiment of this disclosure, the definite integrals of the squares of the magnetic induction intensity of the first magnetic induction intensity curve and the second magnetic induction intensity curve along the axis of symmetry in the transition region are approximately equal within the error range and can be expressed by formula (4).

[0124] (4)

[0125] in, It can be characterized as the axial coordinate at the beginning of the transition zone. It can be characterized as the axial coordinate at the end of the transition zone.

[0126] According to the embodiments of this disclosure, the trend of the adjusted and optimized second magnetic induction intensity curve in the transition region is still that it first decreases and then increases. However, according to the principle of magnetic field equivalence, it can be considered that the second magnetic induction intensity curve and the first magnetic induction intensity curve have the same overall effect on the electron beam in the transition region.

[0127] According to embodiments of this disclosure, by obtaining the initial structural parameters of the electron gun corresponding to the first electric boundary based on the first electric boundary, simulating the working state of embedding the boundary parameters of the magnetic material of the electron gun into the intermediate permanent magnet focusing system, a third magnetic induction intensity curve is obtained. Based on the first magnetic induction intensity curve, by adjusting the initial structural parameters, a second magnetic induction intensity curve that meets the first preset condition is obtained, as well as the target permanent magnet focusing system corresponding to the second magnetic induction intensity curve. This achieves the specific parameters of the electron gun located in the target permanent magnet focusing system. Even if the electron gun with magnetic material is embedded into the target permanent magnet focusing system, an electron beam motion trajectory with small trajectory fluctuations, good laminar flow, high throughput, and suitable filling ratio can be obtained. Furthermore, the electron beam can meet the optimal incident conditions when entering the interaction region, so that the electron gun can be embedded into the target permanent magnet focusing system according to the specific parameters, thereby miniaturizing the klystron.

[0128] According to embodiments of this disclosure, an electron gun corresponding to the target structural parameters corresponding to the second magnetic induction intensity curve is embedded in the target permanent magnet focusing system to obtain the electron optical system of the target speed control tube, including:

[0129] According to an embodiment of this disclosure, the adjusted initial structural parameters corresponding to the second magnetic induction intensity curve are determined as the target structural parameters based on the second magnetic induction intensity curve.

[0130] According to embodiments of this disclosure, an electron gun corresponding to the target structural parameters is embedded into the target permanent magnet focusing system to obtain an electron optical system of an intermediate klystron.

[0131] According to embodiments of this disclosure, the welding of the electron gun into the target permanent magnet focusing system is completed according to the target structural parameters, and the processing and assembly of the remaining components of the klystron's electron optical system are performed.

[0132] According to an embodiment of this disclosure, a magnetic field test is performed on the electro-optical system of the intermediate klystron to obtain a magnetic induction intensity curve corresponding to the electro-optical system of the intermediate klystron.

[0133] According to an embodiment of this disclosure, a magnetic field test device is used to test the electro-optical system of the intermediate klystron, and the magnetic induction intensity curve corresponding to the electro-optical system of the intermediate klystron in the experimental results is obtained.

[0134] According to an embodiment of this disclosure, if the magnetic flux density curve corresponding to the electron-optical system of the intermediate klystron is the same as the second magnetic flux density curve, the electron-optical system of the intermediate klystron is determined to be the electron-optical system of the target klystron.

[0135] According to embodiments of this disclosure, by comparing the magnetic flux density curve corresponding to the electron optical system of the intermediate klystron with the second magnetic flux density curve, if the two magnetic flux density curves are consistent, the electron optical system of the intermediate klystron is determined to be the electron optical system of the target klystron. If the two magnetic flux density curves are inconsistent, the simulation can be recalculated by modifying the relevant settings in the simulation software, such as the number of grids, boundary size, and structural details, in order to obtain more accurate structural parameters and the second magnetic flux density curve.

[0136] According to embodiments of this disclosure, by determining the adjusted initial structural parameters corresponding to the second magnetic induction intensity curve as the target structural parameters based on the second magnetic induction intensity curve, an electron gun corresponding to the target structural parameters is embedded into the target permanent magnet focusing system to obtain the electron optical system of the intermediate klystron. A magnetic field test is performed on the electron optical system of the intermediate klystron to obtain the magnetic induction intensity curve corresponding to the electron optical system of the intermediate klystron. If the magnetic induction intensity curve corresponding to the electron optical system of the intermediate klystron is the same as the second magnetic induction intensity curve, the electron optical system of the intermediate klystron is determined to be the electron optical system of the target klystron. This realizes the obtaining of a concrete physical object of the electron optical system of the target klystron. Furthermore, a magnetic field test is performed before obtaining the electron optical system of the target klystron to facilitate adjustments to the results of the simulation test, resulting in a miniaturized electron optical system of the target klystron with optimal parameters.

[0137] For example, the design of miniaturized electron optics for a Ka-band klystron is used as an example. Table 1 shows the design requirements of the klystron for the electron beam. Based on the design requirements of the klystron for the electron beam, the working parameters of the electron gun are obtained. Based on the working parameters of the electron gun, the electrode parameters of the electron gun are obtained using the Pierce gun fast calculation method. Based on the electrode parameters of the electron gun, the first electric boundary and the electrostatic trajectory of the electron beam are simulated. The waist radius of the electrostatic trajectory is equal to the equilibrium radius of the electron beam under the action of the magnetic field. Using the calculation formula (1) for the first magnetic induction intensity, the first magnetic induction intensity of the interaction region when the electron beam is a Brillouin current is calculated to be 3687 Gauss. When the electron beam is a partially shielded current, the second magnetic induction intensity is selected as 7820 Gauss (approximately 2.12 times the first magnetic induction intensity). According to formulas (2) and (3), the shielding coefficient and the third magnetic induction intensity are -0.88 and -47 Gauss, respectively. The permanent magnet focusing system of the klystron is a uniform permanent magnet focusing system. Based on the uniform permanent magnet focusing system of the klystron, the initial structural parameters of the uniform permanent magnet focusing system are determined using the scaling principle. According to the second preset condition, the sensitive dimensions of the initial permanent magnet focusing system are repeatedly optimized to obtain the first magnetic induction intensity curve and the structural parameters of the intermediate permanent magnet focusing system corresponding to the first magnetic induction intensity curve. The initial structural parameters of the embedded electron gun are obtained according to the first electric boundary. The boundary information of the magnetic material is written into the calculation software to simulate the magnetic induction intensity curve under the influence of the magnetic material containing the electron gun. Table 2 shows the relevant structural parameters when the boundary information of the magnetic material of the electron gun is not embedded in the intermediate permanent magnet focusing system and when the boundary information of the magnetic material of the electron gun is embedded in the target permanent magnet focusing system. According to the first preset condition, the initial structural parameters are adjusted and optimized to obtain the second magnetic induction intensity curve and the target structural parameters corresponding to the second magnetic induction intensity curve. According to the target structural parameters, the target permanent magnet focusing system and the electron gun assembly are welded and processed to obtain the electron optical system of the target klystron.

[0138] According to embodiments of this disclosure, the preset conditions for the klystron to the electron beam can be as shown in Table 1.

[0139]

[0140] As shown in Table 1, the anode voltage U of the electron gun a The electron gun operates at a current I of 17kV. t The current is 700mA, the electron channel radius r is 0.3mm, and the electron beam balance radius is 0.165mm.

[0141] According to embodiments of this disclosure, further, the relevant structural parameters of the boundary information of the magnetic material of the electron gun not being embedded in the intermediate permanent magnet focusing system and the boundary information of the magnetic material of the electron gun being embedded in the intermediate permanent magnet focusing system are shown in Table 2.

[0142]

[0143] As shown in Table 2, B0 can be represented by the second magnetic induction intensity, B K It can be characterized as the third magnetic induction intensity, r can be characterized as the radial dimension of the inner hole of the electron gun pole shoe, and z can be characterized as the axial dimension of the Kovar ring welded to the focusing electrode.

[0144] According to the embodiments of this disclosure, when the focusing electrode material of the electron gun is high-temperature molybdenum and the electron gun assembly is located outside the permanent magnet focusing system, if the axial dimension of the klystron can meet the miniaturization requirements, the magnetic field distribution inside the permanent magnet focusing system can be unaffected by the magnetic material. In the above case, the design steps of the electron optical system of the klystron can be simplified to six steps: First, according to the design requirements of the klystron for the electron beam, the electrode parameters of the electron gun are obtained using the Pierce gun synthesis calculation method. Second, using particle simulation software, the size and relative position between each electrode of the electron gun are optimized to obtain the first electric field boundary and electrostatic trajectory of the electron beam with good withstand voltage between each electrode, good laminar flow of the beam trajectory, suitable conductivity coefficient, and suitable beam waist radius. Third, the first magnetic induction intensity of the interaction region under the condition that the electron beam is a Brillouin current is calculated, and the second magnetic induction intensity of the interaction region under the condition that the electron beam is a partially shielded current is determined by comprehensively considering the volume, shape and other index parameters of the klystron. The shielding coefficient and the third magnetic induction intensity of the cathode surface are calculated according to the corresponding calculation formulas (2) and (3). Fourth, based on the parameters of the existing klystron permanent magnet focusing system, an initial permanent magnet focusing system is obtained using the scaling principle. Fifth, using particle simulation software, the magnetic flux density curve is optimized according to the first preset condition, and the electrostatic trajectory of the electron beam is solved simultaneously until an electron beam trajectory with small beam fluctuations, good laminar flow, high throughput, and suitable beam filling ratio is obtained, ultimately yielding the target permanent magnet focusing system corresponding to the first magnetic flux density curve. Sixth, based on the target permanent magnet focusing system, the processing, welding, assembly, and testing of the electron optical system are completed, and the magnetic flux density curve obtained from the experimental test is recorded. The first magnetic flux density curve and the tested magnetic flux density curve are compared. If the first magnetic flux density curve and the tested magnetic flux density curve are inconsistent, the parameters related to the first magnetic flux density curve are adjusted and the simulation is recalculated. If the first magnetic flux density curve and the tested magnetic flux density curve are consistent, the electron optical system of the target klystron is obtained.

[0145] Figure 3 The diagram illustrates the electrical boundary of the electron gun and the electrostatic trajectory of the electron injection according to an embodiment of the present disclosure.

[0146] like Figure 3 As shown, Figure 3 The first electrical boundary of the electron gun and the electrostatic trajectory of the electron beam are shown. The anode voltage of the electron beam is 17 kV, the cathode voltage is 0 V, the focusing electrode voltage is 0 V, the laminar flow of the electron beam is good, and the beam waist radius is suitable.

[0147] Figure 4 The diagram schematically illustrates a cross-sectional view of a uniform permanent magnet focusing system for a klystron according to an embodiment of the present disclosure.

[0148] like Figure 4 As shown, Figure 4 The diagram illustrates a cylindrical permanent magnet focusing system based on an existing klystron. A uniform permanent magnet focusing system was selected, and an initial permanent magnet focusing system was obtained using the scaling principle. The horizontal axis can be represented as the axial direction, and the vertical axis can be represented as the radial direction. The initial permanent magnet focusing system may include an outer magnetic screen, two permanent magnets, an electron gun pole piece, and a collecting pole piece.

[0149] Figure 5 The schematic diagram illustrates the magnetic field distribution of an electron gun not embedded in a uniform permanent magnet focusing system according to an embodiment of the present disclosure.

[0150] like Figure 5 As shown, Figure 5 The magnetic field distribution is shown when the electron gun is not embedded in a uniform permanent magnet focusing system.

[0151] Figure 6 The diagram illustrates the trajectory of an electron beam according to an embodiment of the present disclosure under the action of an electron gun not embedded in a uniform permanent magnet focusing system.

[0152] like Figure 6 As shown, Figure 6 The electron beam trajectory is shown as an electrostatic trajectory obtained by combining the first electric boundary when the electron gun is not embedded in a uniform permanent magnet focusing system. The magnetic flux density at the cathode surface is -47.4 Gauss. The magnetic flux density curve in the transition region matches the electron beam trajectory well. The magnetic flux density in the interaction region is 7820 Gauss. The electron beam trajectory in the interaction region exhibits small fluctuations, good laminar flow, and an equilibrium radius of approximately 0.165 mm. The beam current throughput is 100%. The magnetic flux density in the collecting electrode region decreases rapidly, and the electron beam diverges and strikes the inner surface of the collecting electrode.

[0153] Figure 7 The schematic diagram illustrates the magnetic field distribution of an electron gun embedded in a uniform permanent magnet focusing system according to an embodiment of the present disclosure.

[0154] like Figure 7 As shown, Figure 7The diagram shows the magnetic induction intensity curves corresponding to the permanent magnet focusing system when the boundary information of the magnetic material of the electron gun is embedded in the permanent magnet focusing system. The horizontal axis can be represented as the axial direction, the vertical axis as the radial direction, r as the radial dimension of the inner hole of the electron gun pole shoe, and z as the axial dimension of the Kovar ring welded to the focusing pole. By magnifying the position of the electron gun, it can be seen that the boundary information of the magnetic material includes the pure iron focusing pole of the electron gun and the Kovar alloy welded to the ceramic seal.

[0155] Figure 8 The diagram illustrates the magnetic flux density distribution along the z-axis of the electron beam according to embodiments of the present disclosure in cases where it is not embedded in a permanent magnet focusing system and when it is embedded in a focusing system.

[0156] like Figure 8 As shown, Figure 8 The first magnetic flux density curves B, distributed along the z-axis, are shown, obtained using an electron gun embedded uniform permanent magnet focusing system and an electron gun non-embedded uniform permanent magnet focusing system, respectively. z1 Second magnetic induction intensity curve B z2 The trajectories of the first and second magnetic induction intensity curves completely overlap in the interaction region and the collecting electrode region. In the cathode region and the transition region, the curve trend of the first magnetic induction intensity curve is monotonically increasing, while the curve trend of the second magnetic induction intensity curve is first decreasing and then increasing. Moreover, the magnetic induction intensity of both the first and second magnetic induction intensity curves at the cathode surface is approximately equal to the third magnetic induction intensity B. K .

[0157] Figure 9 The diagram illustrates the trajectory of an electron beam according to an embodiment of the present disclosure as the electron gun is embedded in a uniform permanent magnet focusing system.

[0158] like Figure 9 As shown, Figure 9 The electron beam trajectory, obtained by combining the second magnetic flux density curve and the electrostatic trajectory of the electron beam when the electron gun is embedded in a uniform permanent magnet focusing system, is shown. The magnetic flux density at the cathode surface is -47.8 Gauss. The magnetic flux density curve in the transition region matches the electron beam trajectory well. The magnetic flux density in the interaction region is 7820 Gauss. The electron beam trajectory in the interaction region exhibits small fluctuations, good laminar flow, and an equilibrium radius of approximately 0.165 mm. The beam current throughput is 100%. The magnetic flux density in the collecting electrode region decreases rapidly, and the electron beam diverges and strikes the inner surface of the collecting electrode.

[0159] According to embodiments of this disclosure, in comparison Figure 6 and Figure 9It can be seen that, under the action of the two permanent magnet focusing systems, the electron beam has very small fluctuations in its trajectory, good laminar flow, and equal equilibrium radii of approximately 0.165 mm.

[0160] Figure 10 A schematic block diagram of an apparatus for miniaturizing an electro-optical system for a klystron, according to an embodiment of the present disclosure, is shown.

[0161] like Figure 10 As shown, the device for miniaturizing the electron optical system of the klystron applied to the first terminal device in this embodiment includes: an acquisition module 1010, a first adjustment module 1020, a second adjustment module 1030, and a first obtaining module 1040.

[0162] The acquisition module 1010 is used to acquire the first target parameters of the electron gun and the initial permanent magnet focusing system. The first target parameters include the electrode parameters, operating parameters, and first electrical boundary of the electron gun. The electrode parameters and operating parameters of the electron gun correspond to the preset conditions for the electron beam from the klystron. The initial permanent magnet focusing system is based on a cylindrical permanent magnet focusing system, which, according to the scaling principle, does not contain an electron gun structure. The acquisition module 1010 can be used to execute the operation S210 described above, which will not be repeated here.

[0163] The first adjustment module 1020 is used to adjust the range of the magnetic induction intensity region of the initial permanent magnet focusing system according to the first magnetic induction intensity, thereby obtaining the first magnetic induction intensity curve. The first magnetic induction intensity is obtained based on the operating parameters of the electron gun when the electron beam is a Brillouin current. The first adjustment module 1020 can be used to execute the operation S220 described above, which will not be repeated here.

[0164] The second adjustment module 1030 is used to adjust the initial structural parameters by simulating the working state of the electron gun corresponding to the initial structural parameters embedded in the intermediate permanent magnet focusing system, thereby obtaining a second magnetic induction intensity curve. The intermediate permanent magnet focusing system is characterized as the permanent magnet focusing system corresponding to the first magnetic induction intensity curve, and the initial structural parameters are parameters that match the first electric boundary and the first magnetic induction intensity curve. The second adjustment module 1030 can be used to execute the operation S230 described above, which will not be repeated here.

[0165] The first obtaining module 1040 is used to embed the electron gun corresponding to the target structural parameters corresponding to the second magnetic induction intensity curve into the target permanent magnet focusing system to obtain the electron optical system of the target speed regulating tube. The target structural parameters include the structural parameters of the electron gun obtained after adjusting the initial structural parameters and the structural parameters of the target permanent magnet focusing system. The target permanent magnet focusing system is characterized as the permanent magnet focusing system corresponding to the second magnetic induction intensity curve. The first obtaining module 1040 can be used to execute the operation S240 described above, which will not be repeated here.

[0166] According to embodiments of this disclosure, the second adjustment module 1030 includes: a first obtaining submodule, a first simulation submodule, and a first adjustment submodule.

[0167] The first submodule is used to obtain the initial structural parameters of the electron gun corresponding to the first electric boundary, wherein the initial structural parameters include the boundary parameters of the magnetic material of the electron gun.

[0168] The first simulation submodule is used to simulate the working state of embedding the boundary parameters of the magnetic material of the electron gun into the intermediate permanent magnet focusing system, and to obtain the third magnetic induction intensity curve.

[0169] The first adjustment submodule is used to obtain a second magnetic induction intensity curve that meets the first preset condition by adjusting the initial structural parameters based on the first magnetic induction intensity curve.

[0170] According to an embodiment of this disclosure, the first adjustment submodule includes: a first preset condition unit.

[0171] The first preset condition unit is used to characterize the first preset condition as follows: the magnetic induction intensity of the second magnetic induction intensity curve on the cathode surface is equal to the magnetic induction intensity of the first magnetic induction intensity curve on the cathode surface, and the magnetic induction intensity threshold of the second magnetic induction intensity curve in the transition region is equal to the magnetic induction intensity threshold of the first magnetic induction intensity curve in the transition region.

[0172] According to embodiments of this disclosure, module 1040 includes: a first determining submodule, a first embedding submodule, a first testing submodule, and a second determining submodule.

[0173] The first determining submodule is used to determine the adjusted initial structural parameters corresponding to the second magnetic induction intensity curve as the target structural parameters based on the second magnetic induction intensity curve.

[0174] The first embedding submodule is used to embed the electron gun corresponding to the target structural parameters into the target permanent magnet focusing system to obtain the electron optical system of the intermediate klystron.

[0175] The first test submodule is used to perform magnetic field testing on the electron optical system of the intermediate klystron to obtain the magnetic induction intensity curve corresponding to the electron optical system of the intermediate klystron.

[0176] The second determining submodule is used to determine the electron optical system of the intermediate klystron as the electron optical system of the target klystron when the magnetic induction intensity curve corresponding to the electron optical system of the intermediate klystron is the same as the second magnetic induction intensity curve.

[0177] According to embodiments of this disclosure, the apparatus for miniaturizing a klystron further includes: a second obtaining module, a first calculation module, and a third obtaining module.

[0178] The second obtaining module is used to obtain the second magnetic induction intensity when the electron beam is a partially shielded current, based on the first magnetic induction intensity.

[0179] The first calculation module is used to calculate the shielding coefficient based on the first magnetic induction intensity and the second magnetic induction intensity.

[0180] The third obtaining module is used to obtain the third magnetic induction intensity based on the shielding coefficient, the second magnetic induction intensity and the electrode parameters of the electron gun. The third magnetic induction intensity is characterized as the magnetic induction intensity of the electron beam on the cathode surface when the electron beam is a partially shielded current and the magnetic induction intensity of the electron beam in the interaction region is equal to the second magnetic induction intensity.

[0181] According to embodiments of this disclosure, the first adjustment module 1020 includes: a second adjustment submodule, a second simulation submodule, and a third determination submodule.

[0182] The second adjustment submodule is used to adjust the range of magnetic induction intensity of the initial permanent magnet focusing system to obtain the intermediate permanent magnet focusing system.

[0183] The second simulation submodule is used to obtain the intermediate magnetic induction intensity curve by simulating the magnetic field of the intermediate permanent magnet focusing system.

[0184] The third determining submodule is used to determine the intermediate magnetic induction intensity curve as the first magnetic induction intensity curve when the intermediate magnetic induction intensity curve meets the second preset condition.

[0185] According to embodiments of this disclosure, the third determining submodule includes: a first joint unit and a second preset condition unit.

[0186] The first unit is used to process the intermediate magnetic induction intensity curve and the electrostatic trajectory of the electron beam to obtain the motion trajectory of the electron beam. The motion trajectory of the electron beam is characterized as the motion trajectory of the electron beam emitted by the electron gun in the intermediate magnetic induction intensity curve.

[0187] The second preset condition unit is used to determine the intermediate magnetic induction intensity curve as the first magnetic induction intensity curve when the intermediate magnetic induction intensity curve meets the second preset condition. The second preset condition is characterized by the magnetic induction intensity of the intermediate magnetic induction intensity curve on the cathode surface being equal to the third magnetic induction intensity, the trajectory of the electron beam meeting the third preset condition, the magnetic induction intensity of the intermediate magnetic induction intensity curve in the interaction region being equal to the second magnetic induction intensity, and the change of the magnetic induction intensity of the intermediate magnetic induction intensity curve in the collecting electrode region within a predetermined axial distance threshold to the first predetermined intensity threshold.

[0188] According to embodiments of this disclosure, the apparatus for miniaturizing a klystron further includes: a first determining module, a second determining module, a first simulation module, and a third determining module.

[0189] The first determining module is used to determine the operating parameters of the electron gun based on the preset conditions of the klystron for the electron beam. The operating parameters include the operating voltage of the electron gun, the operating current of the electron gun, the cathode current emission density of the electron gun, and the beam waist radius of the electron beam emitted by the electron gun.

[0190] The second determining module is used to determine the electrode parameters of the electron gun based on the working parameters of the electron gun using the Pierce gun synthesis calculation method. The electrode parameters include the cathode curvature radius, cathode cross-sectional radius, anode radius, anode axial coordinate, anode hole radius, and anode-cathode distance.

[0191] The first simulation module is used to perform particle simulation based on the electrode parameters of the electron gun to obtain the first electric boundary of the electron gun.

[0192] The third determining module is used to determine the initial permanent magnet focusing system based on the cylindrical permanent magnet focusing system and by utilizing the scaling principle.

[0193] According to embodiments of this disclosure, any plurality of modules among the acquisition module 1010, the first adjustment module 1020, the second adjustment module 1030, and the first obtaining module 1040 can be combined into one module, or any one of these modules can be split into multiple modules. Alternatively, at least part of the functionality of one or more of these modules can be combined with at least part of the functionality of other modules and implemented in one module. According to embodiments of this disclosure, at least one of the acquisition module 1010, the first adjustment module 1020, the second adjustment module 1030, and the first obtaining module 1040 can be at least partially implemented as hardware circuitry, such as a field-programmable gate array (FPGA), a programmable logic array (PLA), a system-on-a-chip, a system-on-a-substrate, a system-on-package, an application-specific integrated circuit (ASIC), or implemented in hardware or firmware by any other reasonable means of integrating or packaging the circuitry, or implemented in any one of the three implementation methods of software, hardware, and firmware, or in a suitable combination of any of these. Alternatively, at least one of the acquisition module 1010, the first adjustment module 1020, the second adjustment module 1030, and the first obtaining module 1040 may be implemented at least partially as a computer program module, which can perform corresponding functions when the computer program module is run.

[0194] Figure 11 A block diagram of an electronic device for miniaturizing an electro-optical system for a klystron, according to an embodiment of the present disclosure, is shown schematically.

[0195] like Figure 11 As shown, an electronic device according to an embodiment of this disclosure includes a processor 1101, which can perform various appropriate actions and processes according to a program stored in a read-only memory (ROM) 1102 or a program loaded from a storage portion 1108 into a random access memory (RAM) 1103. The processor 1101 may include, for example, a general-purpose microprocessor (e.g., a CPU), an instruction set processor and / or an associated chipset and / or a special-purpose microprocessor (e.g., an application-specific integrated circuit (ASIC)), etc. The processor 1101 may also include onboard memory for caching purposes. The processor 1101 may include a single processing unit or multiple processing units for performing different actions of the method flow according to an embodiment of this disclosure.

[0196] RAM 1103 stores various programs and data required for the operation of the electronic device. Processor 1101, ROM 1102, and RAM 1103 are interconnected via bus 1104. Processor 1101 performs various operations of the method flow according to embodiments of the present disclosure by executing programs in ROM 1102 and / or RAM 1103. It should be noted that the programs may also be stored in one or more memories other than ROM 1102 and RAM 1103. Processor 1101 may also perform various operations of the method flow according to embodiments of the present disclosure by executing programs stored in said one or more memories.

[0197] According to embodiments of this disclosure, the electronic device may further include an input / output (I / O) interface 1105, which is also connected to a bus 1104. The electronic device 1100 may also include one or more of the following components connected to the I / O interface 1105: an input section 1106 including a keyboard, mouse, etc.; an output section 1107 including a cathode ray tube (CRT), liquid crystal display (LCD), etc., and a speaker, etc.; a storage section 1108 including a hard disk, etc.; and a communication section 1109 including a network interface card such as a LAN card, modem, etc. The communication section 1109 performs communication processing via a network such as the Internet. A drive 1110 is also connected to the I / O interface 1105 as needed. A removable medium 1111, such as a disk, optical disk, magneto-optical disk, semiconductor memory, etc., is installed on the drive 1110 as needed so that computer programs read from it can be installed into the storage section 1108 as needed.

[0198] This disclosure also provides a computer-readable storage medium, which may be included in the device / apparatus / system described in the above embodiments; or it may exist independently and not assembled into the device / apparatus / system. The computer-readable storage medium carries one or more programs that, when executed, implement the method according to the embodiments of this disclosure.

[0199] According to embodiments of this disclosure, the computer-readable storage medium may be a non-volatile computer-readable storage medium, such as including, but not limited to: portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination thereof. In this disclosure, the computer-readable storage medium may be any tangible medium that contains or stores a program that can be used by or in conjunction with an instruction execution system, apparatus, or device. For example, according to embodiments of this disclosure, the computer-readable storage medium may include ROM 1102 and / or RAM 1103 and / or one or more memories other than ROM 1102 and RAM 1103 described above.

[0200] Embodiments of this disclosure also include a computer program product comprising a computer program containing program code for performing the methods shown in the flowchart. When the computer program product is run on a computer system, the program code is used to enable the computer system to implement the method provided in embodiments of this disclosure for miniaturizing an electro-optical system for a klystron.

[0201] When the computer program is executed by the processor 1101, it performs the functions defined in the system / apparatus of this disclosure embodiments. According to embodiments of this disclosure, the systems, apparatuses, modules, units, etc., described above can be implemented by computer program modules.

[0202] In one embodiment, the computer program may rely on a tangible storage medium such as an optical storage device or a magnetic storage device. In another embodiment, the computer program may also be transmitted and distributed in the form of signals over a network medium, and may be downloaded and installed via the communication section 1109, and / or installed from the removable medium 1111. The program code contained in the computer program can be transmitted using any suitable network medium, including but not limited to: wireless, wired, etc., or any suitable combination thereof.

[0203] In such an embodiment, the computer program can be downloaded and installed from a network via communication section 1109, and / or installed from removable medium 1111. When the computer program is executed by processor 1101, it performs the functions defined in the system of this disclosure embodiment. According to embodiments of this disclosure, the systems, devices, apparatuses, modules, units, etc., described above can be implemented by computer program modules.

[0204] Those skilled in the art will understand that the features described in the various embodiments and / or claims of this disclosure can be combined or combined in various ways, even if such combinations or combinations are not explicitly described in this disclosure. In particular, the features described in the various embodiments and / or claims of this disclosure can be combined or combined in various ways without departing from the spirit and teachings of this disclosure. All such combinations and / or combinations fall within the scope of this disclosure.

Claims

1. A method for realizing miniaturization of an electron optical system of a klystron, said klystron including a permanent magnet focusing system therein, wherein, The permanent magnet focusing system is embedded with an electron gun; comprising: obtaining a first target parameter of an electron gun and an initial permanent magnet focusing system, wherein the first target parameter comprises electrode parameters, working parameters and a first electric boundary of the electron gun, the electrode parameters of the electron gun and the working parameters of the electron gun correspond to a preset condition of the klystron on the electron beam, and the initial permanent magnet focusing system is a cylindrical permanent magnet focusing system obtained based on a scale principle and without the structure of the electron gun inside the cylindrical permanent magnet focusing system; adjusting a magnetic induction intensity area range of the initial permanent magnet focusing system according to a first magnetic induction intensity to obtain a first magnetic induction intensity curve, wherein the first magnetic induction intensity is obtained according to the working parameters of the electron gun in the case that the electron beam is a Brillouin flow; adjusting initial structure parameters by simulating a working state of the electron gun corresponding to the initial structure parameters embedded in an intermediate permanent magnet focusing system to obtain a second magnetic induction intensity curve, wherein the intermediate permanent magnet focusing system is represented by a permanent magnet focusing system corresponding to the first magnetic induction intensity curve, and the initial structure parameters are parameters matched with the first electric boundary and the first magnetic induction intensity curve; embedding an electron gun corresponding to target structure parameters corresponding to the second magnetic induction intensity curve into a target permanent magnet focusing system to obtain an electron optical system of a target klystron, wherein the target structure parameters comprise structure parameters of the electron gun obtained after adjusting the initial structure parameters and structure parameters of the target permanent magnet focusing system, and the target permanent magnet focusing system is represented by a permanent magnet focusing system corresponding to the second magnetic induction intensity curve.

2. The method of claim 1, wherein, The adjusting initial structure parameters by simulating a working state of the electron gun corresponding to the initial structure parameters embedded in the intermediate permanent magnet focusing system to obtain a second magnetic induction intensity curve comprises: obtaining initial structure parameters of the electron gun corresponding to the first electric boundary according to the first electric boundary, wherein the initial structure parameters comprise boundary parameters of a magnetic material of the electron gun; simulating a working state of embedding the boundary parameters of the magnetic material of the electron gun into the intermediate permanent magnet focusing system to obtain a third magnetic induction intensity curve; obtaining the second magnetic induction intensity curve satisfying a first preset condition by adjusting the initial structure parameters based on the first magnetic induction intensity curve.

3. The method of claim 2, wherein, The first preset condition is that a magnetic induction intensity at a cathode surface of the second magnetic induction intensity curve is equal to a magnetic induction intensity at the cathode surface of the first magnetic induction intensity curve, and a magnetic induction intensity threshold at a transition region of the second magnetic induction intensity curve is equal to a magnetic induction intensity threshold at the transition region of the first magnetic induction intensity curve.

4. The method of claim 1, wherein, The embedding an electron gun corresponding to target structure parameters corresponding to the second magnetic induction intensity curve into a target permanent magnet focusing system to obtain an electron optical system of a target klystron comprises: determining that the adjusted initial structure parameters corresponding to the second magnetic induction intensity curve are the target structure parameters according to the second magnetic induction intensity curve; Embed the electron gun corresponding to the target structure parameter into the target permanent magnet focusing system to obtain an intermediate klystron electron optical system; Perform a magnetic field test on the intermediate klystron electron optical system to obtain a magnetic induction intensity curve corresponding to the intermediate klystron electron optical system; In a case where the magnetic induction intensity curve corresponding to the intermediate klystron electron optical system is the same as the second magnetic induction intensity curve, it is determined that the intermediate klystron electron optical system is the target klystron electron optical system.

5. The method of claim 1, further comprising: obtaining a second magnetic induction intensity according to the first magnetic induction intensity in a case where the electron beam is a partially shielded stream; calculating a shielding coefficient according to the first magnetic induction intensity and the second magnetic induction intensity; obtaining a third magnetic induction intensity according to the shielding coefficient, the second magnetic induction intensity, and electrode parameters of the electron gun, wherein the third magnetic induction intensity represents a magnetic induction intensity of the electron beam at a cathode surface in a case where the electron beam is a partially shielded stream, the magnetic induction intensity of the electron beam in an interaction region is equal to the second magnetic induction intensity.

6. The method of claim 1, wherein, The adjusting the magnetic induction region range of the initial permanent magnet focusing system to obtain a first magnetic induction intensity curve according to the first magnetic induction intensity comprises: adjusting the magnetic induction region range of the initial permanent magnet focusing system to obtain an intermediate permanent magnet focusing system; obtaining an intermediate magnetic induction intensity curve by simulating a magnetic field of the intermediate permanent magnet focusing system according to the intermediate permanent magnet focusing system; In a case where the intermediate magnetic induction intensity curve satisfies a second preset condition, it is determined that the intermediate magnetic induction intensity curve is the first magnetic induction intensity curve.

7. The method of claim 6, wherein, The determining the intermediate magnetic induction intensity curve as the first magnetic induction intensity curve in a case where the intermediate magnetic induction intensity curve satisfies a second preset condition comprises: performing a simultaneous treatment on the intermediate magnetic induction intensity curve and an electrostatic trajectory of the electron beam to obtain a motion trajectory of the electron beam, wherein the motion trajectory of the electron beam represents a motion trajectory of the electron beam emitted by the electron gun in the intermediate magnetic induction intensity curve; In a case where the intermediate magnetic induction intensity curve satisfies a second preset condition, it is determined that the intermediate magnetic induction intensity curve is the first magnetic induction intensity curve, wherein the second preset condition represents that a magnetic induction intensity of the intermediate magnetic induction intensity curve at a cathode surface is equal to the third magnetic induction intensity, the motion trajectory of the electron beam satisfies a third preset condition, a magnetic induction intensity of the intermediate magnetic induction intensity curve in an interaction region is equal to the second magnetic induction intensity, and a magnetic induction intensity of the intermediate magnetic induction intensity curve in a collector region varies within a predetermined axial distance threshold to a first predetermined intensity threshold.

8. The method of claim 1, wherein, The method further comprises: determine working parameters of the electron gun according to preset conditions of the electron beam of the klystron, wherein the working parameters include a working voltage of the electron gun, a working current of the electron gun, a cathode current emission density of the electron gun, and a beam waist radius of the electron beam emitted by the electron gun; determine electrode parameters of the electron gun according to the working parameters of the electron gun by using a Pierce gun synthesis calculation method, wherein the electrode parameters include a cathode curvature radius of the electron gun, a cathode cross-sectional radius of the electron gun, an anode radius of the electron gun, an anode axial coordinate of the electron gun, an anode hole radius of the electron gun, and an anode-cathode spacing of the electron gun; perform particle simulation according to the electrode parameters of the electron gun to obtain first electric boundaries of the electron gun; determine the initial permanent magnet focusing system by using a scale reduction principle based on the cylindrical permanent magnet focusing system.

9. An apparatus for implementing miniaturization of an electron optical system of a velocity- modulated tube, said velocity-modulated tube comprising a permanent magnetic focusing system inside, wherein, The permanent magnet focusing system is embedded with the electron gun, and includes: an acquisition module configured to acquire first target parameters of the electron gun and an initial permanent magnet focusing system, wherein the first target parameters include electrode parameters of the electron gun, working parameters of the electron gun, and first electric boundaries of the electron gun, the electrode parameters of the electron gun and the working parameters of the electron gun correspond to preset conditions of the electron beam of the klystron, and the initial permanent magnet focusing system is a structure obtained by using a scale reduction principle based on the cylindrical permanent magnet focusing system and without containing the electron gun inside the cylindrical permanent magnet focusing system; a first adjustment module configured to adjust a magnetic induction intensity range of the initial permanent magnet focusing system according to a first magnetic induction intensity to obtain a first magnetic induction intensity curve, wherein the first magnetic induction intensity is obtained according to the working parameters of the electron gun in a case that the electron beam is a Brillouin flow; a second adjustment module configured to adjust initial structure parameters by simulating a working state of an electron gun corresponding to the initial structure parameters embedded in an intermediate permanent magnet focusing system, to obtain a second magnetic induction intensity curve, wherein the intermediate permanent magnet focusing system represents a permanent magnet focusing system corresponding to the first magnetic induction intensity curve, and the initial structure parameters are parameters matched with the first electric boundaries and the first magnetic induction intensity curve; a first obtaining module configured to embed an electron gun corresponding to target structure parameters corresponding to the second magnetic induction intensity curve into a target permanent magnet focusing system to obtain an electron optical system of a target klystron, wherein the target structure parameters include structure parameters of the electron gun obtained after the initial structure parameters are adjusted and structure parameters of the target permanent magnet focusing system, and the target permanent magnet focusing system represents a permanent magnet focusing system corresponding to the second magnetic induction intensity curve. 10.An electronic device, comprising: one or more processors; a storage device for storing one or more programs, wherein the one or more programs, when executed by the one or more processors, cause the one or more processors to perform the method according to any one of claims 1-8.

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