Double-sided cooling power module with built-in decoupling capacitor

Abstract

The invention discloses a double-sided cooling power module with a built-in decoupling capacitor in the technical field of power electronic packaging. The double-sided cooling power module is characterized in that the top of a first DBC substrate is provided with two independent metal islands respectively corresponding to the direct current positive electrode potential and the direct current negative electrode potential of a half-bridge circuit; the top copper layer of the second DBC substrate corresponds to the alternating current output potential of the half-bridge circuit; the power device comprises a power device serving as a lower switch and a power device serving as an upper switch; one end of the connecting block is electrically connected to the direct-current positive potential metal island of the first DBC substrate, and the other end of the connecting block is electrically connected to the alternating-current output potential copper layer of the second DBC substrate, so that a vertical commutation loop is formed; and the decoupling capacitor is connected to the direct current bus end of the high-frequency commutation loop of the half-bridge circuit in an embedded manner and is positioned in the vertical commutation loop limited by the connecting block. By adopting the module, a compact three-dimensional packaging structure can be realized in a limited module space, and the parasitic inductance of a direct-current bus loop is effectively reduced.

Description

Technical Field

[0001] This invention relates to the field of power electronics packaging technology, and in particular to a double-sided cooled power module with built-in decoupling capacitors. Background Technology

[0002] In recent years, research in the field of power electronics packaging technology has continued to deepen, with a significant amount of research focusing on packaging structures that eliminate bonding wires as a top interconnect method to improve the reliability, power density, and overall performance of power modules. To achieve this goal, various alternative interconnect technologies have been proposed, including copper clip bonding, multilayer planar interconnects, planar structure interconnects, and solder ball connections. These interconnect methods directly connect semiconductor devices to electrical conductors through processes such as sintering or soldering, allowing heat to be effectively dissipated from both sides of the device, thus constructing double-sided cooled (DSC) power modules with two cooling paths.

[0003] In related technologies, various structural improvement schemes have been proposed to further reduce the parasitic inductance of the power circuit. For example, some schemes use low-temperature co-fired ceramic as the chip carrier to form a three-dimensional structure, while others shorten the current path by directly brazing a copper heat sink to the upper and lower DBC structures, or utilize a quasi-double-sided cooling structure integrating capacitors and drivers to improve the characteristics of the commutation circuit. However, these schemes generally face problems such as complex manufacturing processes, multiple reflow steps, difficulty in precisely controlling the internal structure, difficulty in reliability assessment, and high manufacturing costs. Some structures also have shortcomings such as limited application scenarios and the need to improve safety.

[0004] Therefore, achieving low parasitic inductance, low thermal resistance, high reliability, and high manufacturability within a limited packaging space is a pressing technical challenge that needs to be addressed. Summary of the Invention

[0005] This invention aims to at least partially solve one of the technical problems in related technologies. Therefore, the object of this invention is to propose a bifacially cooled power module with a built-in decoupling capacitor, so as to achieve a more compact current loop layout and improve the module's parasitic parameter performance while meeting the requirements of a bifacial heat dissipation structure.

[0006] To achieve the above objectives, a first aspect of the present invention provides a double-sided cooling power module with a built-in decoupling capacitor, comprising: A first direct-bonded copper (DBC) substrate and a second DBC substrate; the second DBC substrate is disposed above the first DBC substrate; the top of the first DBC substrate has two independent metal islands corresponding to the DC positive and DC negative potentials of the half-bridge circuit respectively; the top copper layer of the second DBC substrate corresponds to the AC output potential of the half-bridge circuit. The power device includes a power device serving as a lower switch, mounted on a DC negative potential metal island of the first DBC substrate, and a power device serving as an upper switch, mounted on an AC output potential copper layer of the second DBC substrate. A connecting block, one end of which is electrically connected to the DC positive potential metal island of the first DBC substrate, and the other end of which is electrically connected to the AC output potential copper layer of the second DBC substrate, forming a vertical commutation circuit. The decoupling capacitor is embedded in the DC bus terminal of the high-frequency commutation circuit of the half-bridge circuit and is located inside the vertical commutation circuit defined by the connecting block.

[0007] In addition, the double-sided cooling power module with built-in decoupling capacitor in the above embodiments of the present invention may also have the following additional technical features: According to one embodiment of the present invention, the decoupling capacitor is embedded between the DC positive metal island and the DC negative metal island of the first DBC substrate.

[0008] According to one embodiment of the present invention, the decoupling capacitor is arranged between the AC output potential copper layer of the second DBC substrate and the DC positive potential extending through the connection block.

[0009] According to one embodiment of the present invention, the connecting block is made of copper and its surface is subjected to electroless nickel-plating immersion gold treatment.

[0010] According to one embodiment of the present invention, the connecting block has a 45° square structure.

[0011] According to one embodiment of the present invention, the dual-sided cooling power module with built-in decoupling capacitor further includes a low-temperature co-fired ceramic (LTCC) interlayer disposed between the first DBC substrate and the second DBC substrate to provide electrical isolation and mechanical support.

[0012] According to one embodiment of the present invention, the LTCC interposer also serves as an alignment fixture for aligning the first DBC substrate, the second DBC substrate, the power device, and the connector block during the manufacturing process.

[0013] According to one embodiment of the present invention, the top copper layer edges of the first DBC substrate and the second DBC substrate have bonding pads for connection to the gate driver board via aluminum wire bonding.

[0014] According to one embodiment of the present invention, the double-sided cooling power module with built-in decoupling capacitor further includes a DC positive potential power terminal, a DC negative potential power terminal and an AC output potential power terminal; wherein, the power terminals are respectively fixed on the top copper layer of the corresponding DBC substrate for power connection between the module and external circuits.

[0015] According to one embodiment of the present invention, the power device of the upper switch and the power device of the lower switch are each composed of two silicon carbide metal oxide semiconductor field-effect transistors (SiC MOSFETs) connected in parallel through a silver sintering process.

[0016] The double-sided cooled power module with built-in decoupling capacitors in this embodiment of the invention utilizes a vertical arrangement of a first DBC substrate and a second DBC substrate. Power devices are mounted on the DC negative metal island and the AC output copper layer, respectively. A connecting block forms a vertical conductive path between the DC positive metal island and the AC output potential, enabling the high-frequency commutation current of the half-bridge circuit to complete loop closure within a very short spatial range. The decoupling capacitor is embedded and arranged inside this vertical commutation loop, tightly coupled to the DC bus terminal, thereby significantly reducing the parasitic inductance of the commutation loop and effectively suppressing voltage overshoot during switching. The LTCC interlayer between the upper and lower DBCs not only provides necessary electrical isolation but also reliable mechanical support, ensuring the overall module structure remains stable under thermal cycling and mechanical loads. Through these synergistic effects, the module achieves comprehensive improvements in electrical performance, thermal management capabilities, and structural reliability, and can achieve higher power density and operational stability while maintaining manufacturability. Attached Figure Description

[0017] Figure 1 This is a partial planar structural diagram of a double-sided cooled power module with built-in decoupling capacitors in one embodiment; Figure 2 This is a partial cross-sectional schematic diagram of a double-sided cooled power module with built-in decoupling capacitors in one embodiment. Figure 3 This is a schematic diagram of the current commutation path of a half-bridge topology without an embedded decoupling capacitor in one embodiment. Figure 4 This is a schematic diagram of the current commutation path using an embedded capacitor rear half-bridge topology in one embodiment; Figure 5 This is a schematic diagram of the cross-sectional structure of the power module in one embodiment.

[0018] Reference numerals: 1. First DBC substrate; 2. Second DBC substrate; 3. Lower switching power device; 4. Upper switching power device; 5. Connector block; 6. Decoupling capacitor; 7. Kelvin source; 8. Gate; 9. Temperature sensor. Detailed Implementation

[0019] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0020] The implementation details of the technical solutions in the embodiments of this application are described in detail below.

[0021] Figure 1 A partial planar structural diagram of a double-sided cooled power module with built-in decoupling capacitors is shown. The double-sided cooled power module includes two stacked DBC substrates 1 and 2, power devices 3 and 4, a connecting block 5, and a decoupling capacitor 6. The first DBC substrate 1 and the second DBC substrate 2 are arranged vertically in sequence, forming the basic support structure of the module. The following section combines... Figure 1 The structure of the double-sided cooling power module is described in detail, along with different embodiments.

[0022] In one embodiment, the first DBC substrate 1 is the lower DBC substrate, and its top copper layer is etched to form two independent metal islands that are electrically isolated from each other. The shape and spacing of the two metal islands are designed to optimize the current path. These two metal islands respectively serve as the DC positive potential (DC+) and DC negative potential (DC-) in the half-bridge circuit. By strictly isolating the two metal islands, a stable distribution of the positive and negative potentials of the DC bus can be ensured, and a clear potential reference can be provided for the lower switching power device 3 and the commutation path.

[0023] The second DBC substrate 2 is the upper DBC substrate, located above the first DBC substrate 1. The top copper layer of the second DBC substrate 2 serves as the AC output potential (AC) conductor layer of the half-bridge circuit, supporting the upper switching power device 4 and acting as a key node in the commutation path.

[0024] In practical applications, the first DBC substrate 1 and the second DBC substrate 2 are composed of a ceramic substrate and a copper layer. They can be aluminum nitride (AlN) ceramic copper-clad substrates to have both good thermal conductivity and mechanical reliability.

[0025] The power devices include power devices that act as lower switches and power devices that act as upper switches, forming a switching unit for a half-bridge topology.

[0026] The lower switching power device 3 is mounted on a metal island at the DC negative potential of the first DBC substrate 1. This metal island provides a defined DC negative potential, enabling the lower switching power device 3 to have a stable potential reference during both turn-on and turn-off processes. This helps to reduce the influence of parasitic inductance on the device and improve the commutation speed.

[0027] The upper switching power device 4 is mounted on the AC output potential copper layer of the second DBC substrate 2. This AC output copper layer serves as the commutation node of the half-bridge circuit, forming a complete power loop with the DC positive and negative metal islands on the first DBC substrate 1. By arranging the upper switching power device 4 at this AC output potential position, the conduction path of the upper switch can be directly connected to the connecting block 5 and the vertical commutation loop, thereby shortening the current commutation path and reducing the parasitic inductance of the loop.

[0028] In practical applications, to improve the connection reliability between the top surface of the device and the external welding structure, the top surface of the power device can be remetallized, for example, by plating nickel on an aluminum layer to improve welding wettability and ensure reliable electrical interconnection, and the power device can be mounted by silver sintering.

[0029] The connecting block 5 is used to establish an electrical path between the DC positive potential and the AC output potential between the first DBC substrate 1 and the second DBC substrate 2, and at the same time form a vertical commutation path. Figure 2 A partial cross-sectional schematic diagram of a bifacially cooled power module with built-in decoupling capacitors is shown. Figure 2 In the middle, one end of the connecting block 5 is fixed and electrically connected to the metal island on the first DBC substrate 1 that carries the DC positive potential, and the other end is electrically connected to the AC output potential copper layer of the second DBC substrate 2.

[0030] In this structure, the connecting block 5 is positioned vertically across the gap between the upper and lower substrates, thereby completing the electrical connection of the half-bridge circuit. This allows the DC positive potential to be directly injected into the AC output node via the shortest path, forming a compact, low-impedance vertical commutation loop. By shortening the current commutation path and reducing the parasitic inductance in that path, the transient current response characteristics of the half-bridge unit during high-frequency commutation are improved.

[0031] In practical applications, the connecting block 5 can be made of highly conductive metal and can be reliably connected to the upper and lower substrates through silver sintering and other methods. At the same time, the size can be designed according to the spacing between the upper and lower substrates to ensure the reliability of the electrical connection and the mechanical strength.

[0032] like Figure 1 and Figure 2As shown, the decoupling capacitor 6 is embedded within the vertical commutation loop defined by the connecting block 5 and electrically coupled to the DC bus terminal of the high-frequency commutation loop of the half-bridge circuit. This allows it to provide an effective bypass path for the DC side during high-frequency commutation, thereby achieving low-impedance bypassing of high-frequency components and suppressing voltage spikes and oscillations during commutation. The DC bus terminal refers to the DC-side endpoint in the high-frequency commutation loop, and its specific physical arrangement will be described in detail through two subsequent embodiments.

[0033] In practical applications, the decoupling capacitor 6 uses two multilayer ceramic capacitors (MLCCs) as core components. MLCCs have the characteristics of low equivalent series inductance and wide frequency response. By directly embedding them inside the vertical commutation circuit, high-frequency current can complete a closed path in a very short distance, further enhancing the bypass capability for high-frequency components and improving the dynamic stability of the module under high-speed switching conditions.

[0034] The embedded decoupling capacitor 6, together with the vertically arranged connecting block 5 and the stacked first DBC substrate 1 and second DBC substrate 2, constitute a compact three-dimensional vertical commutation loop structure. This structure can minimize the high-frequency current loop area and optimize the commutation path. Specifically, Figure 3 The current commutation path of the half-bridge topology without embedded decoupling capacitors is shown. The commutation current needs to pass through the external bus capacitor to form a large current loop. Figure 4 The diagram illustrates the commutation path after the adoption of embedded capacitors. The high-frequency commutation loop is reduced from a large loop including external bus capacitors to a tiny vertical loop inside the module consisting of devices and decoupling capacitors.

[0035] By directly embedding the decoupling capacitor 6 inside the vertical commutation loop, current commutation can be completed within an extremely short path, significantly compressing the commutation loop size, effectively reducing the parasitic inductance of the DC bus loop, and improving the voltage and current commutation quality. In this structure, the embedded decoupling capacitor 6 can reduce the parasitic inductance of the power loop to 2-3nH, thereby bringing a beneficial effect of 70%-80% voltage overcharging.

[0036] In one embodiment, such as Figure 1As shown, the decoupling capacitor 6 adopts an embedded structure and is installed between the DC positive and DC negative metal islands of the first DBC substrate 1 using a silver sintering process. Specifically, an embedded mounting window for accommodating the decoupling capacitor 6 is reserved between the metal islands with DC positive and DC negative potentials led out from the first DBC substrate 1, so that the electrodes of the decoupling capacitor 6 directly correspond to the lead-out positions of the DC positive and DC negative potentials. During assembly, the decoupling capacitor 6 is reliably soldered to the corresponding metal islands through a solder layer, allowing the decoupling capacitor 6 to directly bridge the DC positive and negative potentials with the shortest current path. Through this embedded arrangement, the decoupling capacitor 6 can be more compactly coupled inside the high-frequency commutation circuit without increasing the overall module size, thereby significantly reducing the parasitic inductance of the circuit and improving the voltage stress suppression effect during high-speed switching.

[0037] In another embodiment, a connection method for the decoupling capacitor 6 in the module is provided. Specifically, the decoupling capacitor 6 is arranged between the AC output potential copper layer of the second DBC substrate 2 and the DC positive potential extending from the connecting block 5 to the substrate using a silver sintering process. Specifically, one end of the connecting block 5 extends to the surface of the second DBC substrate 2 to form a DC positive potential lead-out terminal, so that the DC positive potential can form a mounting area on the second DBC substrate 2 that can be directly soldered to the decoupling capacitor 6. One electrode of the decoupling capacitor 6 is mounted on the AC output potential copper layer, and the other electrode is mounted on the DC positive potential soldering area formed by the connecting block 5. The two are fixed and electrically connected by brazing material. This arrangement allows the decoupling capacitor 6 to bridge the AC output node and the DC positive node, forming a local high-frequency decoupling path for the AC output branch, and further weakening the parasitic voltage oscillation in the half-bridge high-frequency commutation circuit, improving voltage stability during switching transients.

[0038] In one embodiment, connector 5 is made of copper with high thermal and electrical conductivity to meet the requirements of high current conduction and thermal management in the half-bridge high-frequency converter circuit. To further improve the oxidation resistance and welding reliability of connector 5, its outer surface is treated with electroless nickel immersion gold (ENIG). The electroless nickel plating layer provides enhanced hardness and corrosion resistance, while the immersion gold layer ensures a stable low-impedance contact interface with the DBC substrate pads and the electrodes of the decoupling capacitor 6. Connector 5 treated with ENIG not only has excellent interface stability under high temperature and high humidity conditions, but also effectively suppresses contact degradation caused by surface migration and corrosion, thereby improving the long-term reliability of the entire module.

[0039] In one embodiment, the connecting block 5 has a 45° square structure. This structure enables the connecting block 5 to form a stable load-bearing and positioning interface in both the vertical and lateral directions, achieving higher structural registration accuracy during module assembly and improving the consistency and reliability of the welding interface.

[0040] The 45° square-shaped connecting block 5 serves not only for electrical connection but also as an important thermal path for the switching devices. Heat generated by the lower switch is efficiently conducted to the first DBC substrate 1 via the connecting block 5, while heat generated by the upper switch is conducted to the second DBC substrate 2 via the connecting block 5. This creates a bidirectional heat conduction path between the two DBC substrates, contributing to temperature balance in the double-sided cooling structure. The 45° angled geometry of the connecting block 5 allows for a more efficient expansion angle of heat flow towards the DBC substrate, reducing localized heat accumulation and thus improving heat dissipation efficiency and the module's thermal stability under high power density conditions.

[0041] In one embodiment, an LTCC interposer is disposed between the first DBC substrate 1 and the second DBC substrate 2 to construct a stable electrical isolation and mechanical support structure between the upper and lower substrates. LTCC material possesses excellent dielectric strength, low loss characteristics, and good dimensional stability, and can maintain reliable performance under harsh operating conditions such as high voltage, high temperature, and rapid temperature cycling. By mounting the LTCC interposer between the upper and lower DBC substrates, the structural strength of the LTCC interposer itself can maintain a fixed spacing between the substrates, thereby ensuring that the module forms a stable stacked structure and reducing the risk of deformation caused by thermal stress.

[0042] At the same time, the high insulation properties of LTCC enable the LTCC interlayer to provide high-strength electrical isolation between upper and lower potentials. For example... Figure 5 In the cross-sectional structure of the power module shown, when the DC positive potential on the first DBC substrate 1 is coupled to the region near the interlayer via the decoupling capacitor, the 0.6mm thick LTCC interlayer can maintain sufficient insulation margin between the region and the AC output potential carried by the second DBC substrate 2, avoiding the risk of breakdown or creepage between different potentials.

[0043] In practical applications, to meet the requirements of three-dimensional packaging structures, the internal structure of the LTCC interposer can be designed with through-holes, grooves, or windows to reserve mounting space for the connector block 5, power devices, and decoupling capacitor 6. These structures enable vertical electrical connections and commutation paths to be implemented within a limited space, thereby further reducing the overall thickness of the module and lowering parasitic inductance.

[0044] In addition, the excellent geometric accuracy and flatness of the LTCC interposer can maintain the consistency of the relative positions of the upper and lower DBC substrates during assembly, which helps to stabilize the welding height of the connector block 5 and the geometric parameters of the vertical commutation path, thereby improving the mechanical reliability and thermal stability of the module.

[0045] In one embodiment, the LTCC interposer not only provides electrical isolation and mechanical support but also functions as an alignment fixture. During module manufacturing, precise alignment holes, positioning slots, or geometric reference structures are pre-set on the LTCC interposer, enabling automatic positional alignment of the first DBC substrate 1, the second DBC substrate 2, power devices, and connector block 5 during assembly. Due to the excellent dimensional stability of LTCC material, alignment using the LTCC interposer maintains reliable geometric accuracy during multiple heating, pressing, and welding processes, thereby significantly improving the assembly consistency of the entire three-dimensional stacked structure.

[0046] This alignment method ensures that the relative positions of key components in the module are precisely maintained in three dimensions, effectively reducing the adverse effects of assembly deviations on the high-frequency commutation loop, electrical parasitic parameters, and heat dissipation paths. For example, when the connector 5 passes between the interposer and the two DBC substrates, the alignment reference in the LTCC interposer ensures that the connector 5 corresponds to the preset welding area in the vertical direction, avoiding stress concentration or increased parasitic inductance caused by welding position misalignment. By using the LTCC interposer as an alignment fixture, the process difficulty in manufacturing can be further reduced, assembly repeatability can be improved, and the half-bridge power module can have more stable electromagnetic and thermal performance under high-frequency operating conditions.

[0047] In one embodiment, to achieve electrical signal connection between the module and the external gate driver board, bonding pad areas can be reserved on the top copper layers of the first DBC substrate 1 and the second DBC substrate 2. These bonding pads, by forming locally thickened areas or defining metallization windows on the copper layer surface, enable the aluminum wire to achieve a reliable thermomechanical connection interface during the bonding process. After the module is assembled, the bonding pads can be connected to the corresponding pads on the gate driver board using aluminum wire bonding technology, thereby reliably transmitting the switching signals of the AC output node to the drive circuit and realizing gate control of the power device.

[0048] refer to Figure 1 As shown, a pad is provided on the DBC substrate for the gate 8 of the power device, which is electrically connected to an external gate driver circuit board via bonding wires. Simultaneously, a Kelvin source pad 7 is also provided on the DBC substrate. This pad is separate from the main source conductive path of the power device and is used to provide an independent low-inductance signal reference for the gate driver.

[0049] This bonding method can reduce lead length while ensuring electrical connection quality, which helps to reduce parasitic inductance in the control circuit and improve the response speed and anti-interference capability of the gate drive signal.

[0050] In one embodiment, the module is provided with DC positive potential power terminals, DC negative potential power terminals, and AC output potential power terminals. Each power terminal is made of a highly conductive metal material and is fixed to the copper layer on the top of the corresponding DBC substrate using a silver sintering process. The silver sintering layer can form a high-strength, low-resistance metal connection interface between the power terminals and the DBC copper layer, enabling the module to maintain reliable conductivity and structural stability under high current and high-temperature cycling conditions.

[0051] After module assembly, each power terminal serves as a connection interface for external circuits, enabling the transmission of DC input power and AC output power to the external power system. The geometry and installation position of the terminals can be optimized based on busbar layout, heat dissipation structure, and electromagnetic compatibility design to reduce parasitic parameters of the power path and improve the overall current carrying capacity of the power module.

[0052] In one embodiment, the upper switching power device 4 and the lower switching power device 3 in the module are each composed of two SiC MOSFETs connected in parallel. The parallel SiC MOSFETs can be mounted in a compact layout on the same DBC substrate and fixed to the copper layer surface by a silver sintering process to form a highly reliable, low thermal resistance interface. To ensure current sharing among the parallel devices, the source loop and drain connection positions of each device can be optimized in the wiring design to maintain good consistency between their parasitic inductance and parasitic resistance.

[0053] By using two MOSFETs in parallel, the current carrying capacity and heat dissipation capacity of a single switch can be effectively improved, enabling the module to operate at higher power densities. Simultaneously, the high thermal conductivity metal interconnect layer formed by the silver sintering process helps reduce the junction temperature, improving the overall reliability and long-term stability of the parallel devices in high-frequency, high-voltage applications.

[0054] In practical applications, the double-sided cooled power module with built-in decoupling capacitors can also be equipped with a temperature sensor 9 to monitor the temperature of the power devices or critical areas inside the module. The sensor is connected to the control or protection circuitry via an electrical interface to provide early warning or trigger protective measures in case of abnormal temperatures, thereby enhancing the safety and reliability of the module.

[0055] In one application embodiment, a manufacturing process for the bifacially cooled power module with a built-in decoupling capacitor is provided, which may specifically include: First, the mounting surface of the lower switching power device 3 undergoes a sintering pretreatment. The lower switching power device 3, the decoupling capacitor 6, and one end of the connecting block 5 are sequentially placed on the corresponding copper layer area of ​​the first DBC substrate 1, and a silver sintering process is used to form a reliable metal interface between the devices and the copper layer. After sintering and solidification, the first DBC substrate 1 containing the lower switching power device 3, the decoupling capacitor 6, and the connecting block 5 is obtained, providing a foundation for subsequent stacking and assembly of the upper and lower structures.

[0056] Subsequently, the LTCC interposer is fitted onto the outside of the aforementioned lower-layer component as an alignment fixture. The pre-set alignment holes, positioning slots, or geometric reference structures in the LTCC interposer spatially limit the upper switching power device 4, connector block 5, and related soldering areas in the second DBC substrate 2, ensuring their accurate positioning during subsequent assembly. Next, the second DBC substrate 2, with the upper switching power device 4 pre-mounted, is placed on top of the LTCC interposer, and the alignment reference provided by the interposer is used to achieve overall registration between the upper and lower DBC substrates and the interposer. Through a one-time co-sintering process, a high-strength sintered connection is formed between the other end of the upper switching power device 4 and connector block 5 and the corresponding copper layer, resulting in a structurally complete and precisely positioned three-dimensional package stack. This alignment and co-sintering step is a key process step in achieving a low parasitic inductance path and a stable mechanical structure.

[0057] After completing the power stacking structure, the modules can be integrated and packaged. Specifically, the module housing integrating the gate drive circuit is mounted on the periphery of the stacking structure, so that the drive board inside the housing and the bonding pads on the second DBC substrate 2 are pre-aligned. Subsequently, aluminum wire bonding technology is used to wire bond the gate 8 signal terminals of the upper switching power device 4 and the lower switching power device 3 to the pads of the drive board to establish a stable gate drive link. At the same time, the Kelvin source terminal 7 of the power device is wire bonded to the signal reference terminal of the drive board to ensure the low inductance independence of the drive circuit; in addition, the signal terminal of the temperature sensor 9 is connected to establish a thermal monitoring link.

[0058] For critical areas where the internal potential difference of the module is large or may be subject to mechanical stress, silicone gel can be selectively used for local potting to improve the long-term reliability of the module under thermal cycling, vibration and high voltage electrical stress.

[0059] Through the above manufacturing process, the decoupling capacitor, connecting block and upper and lower power devices can maintain a high-precision positional relationship in three-dimensional space, thereby realizing a double-sided cooling power module with low parasitic inductance, high heat dissipation performance and high electrical isolation capability.

[0060] In the above embodiments, the double-sided cooled power module with built-in decoupling capacitors enables a compact three-dimensional packaging structure within a limited space. The upper and lower DBC substrates, connector blocks, and embedded decoupling capacitors work together to form a low-parasitic-inductance vertical commutation loop, resulting in an extremely short high-frequency commutation current path. This significantly reduces the parasitic inductance of the DC bus loop and effectively suppresses voltage spikes and oscillations during commutation. Furthermore, the LTCC interposer provides high-strength electrical isolation and mechanical support while also serving as an alignment fixture, enabling precise three-dimensional positioning of key module components and improving assembly accuracy and repeatability. Combined with the high conductivity of the copper connector blocks and optimized geometric design, the module exhibits excellent current and voltage waveform quality and stable heat dissipation performance under high-frequency switching conditions. The overall electrical, thermal, and mechanical reliability of the power circuit are significantly improved, thus meeting the requirements of high power density and high reliability applications.

[0061] In the description of this specification, references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0062] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this invention, "a plurality of" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0063] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. A double-sided cooling power module with built-in decoupling capacitors, characterized in that The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module.

2. The double-sided cooling power module with built-in decoupling capacitor of claim 1, wherein, The application relates to a built-in decoupling capacitor double-sided cooling power module.

3. The double-sided cooling power module with built-in decoupling capacitor of claim 1, wherein, The application relates to a built-in decoupling capacitor double-sided cooling power module.

4. The double-sided cooling power module with built-in decoupling capacitor of claim 1, wherein, The application relates to a built-in decoupling capacitor double-sided cooling power module.

5. The double-sided cooling power module with built-in decoupling capacitor of claim 4, wherein, The application relates to a built-in decoupling capacitor double-sided cooling power module.

6. The double-sided cooling power module with built-in decoupling capacitor of claim 1, wherein, The application relates to a built-in decoupling capacitor double-sided cooling power module.

7. The double-sided cooling power module with built-in decoupling capacitor of claim 6, wherein, The application relates to a built-in decoupling capacitor double-sided cooling power module.

8. The power module of claim 1, wherein, The application relates to a built-in decoupling capacitor double-sided cooling power module.

9. The power module of claim 1, wherein, The application relates to a built-in decoupling capacitor double-sided cooling power module.

10. The power module of claim 1, wherein, The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in decoupling capacitor double-sided cooling power module. The application relates to a built-in dec

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