Miniature laser alarm photoelectric detection module with large photosensitive surface 2.5 D chip stack and manufacturing method of miniature laser alarm photoelectric detection module

Abstract

The invention provides a large photosensitive surface 2.5 D chip stacked miniature laser alarm photoelectric detection module and a manufacturing method thereof, the detection module comprises a tube socket, a ceramic circuit, an amplifier chip, a silicon substrate, a photoelectric detector chip and a tube cap, the photoelectric detection module is packaged through the tube socket and the tube cap, the silicon substrate is electrically connected with the tube socket through the ceramic circuit, and the amplifier chip is electrically connected with the photoelectric detector chip. The ceramic circuit is provided with a plurality of guide pins for signal transmission, the amplifier chip and the photoelectric detector chip are integrated on the front side and the back side of the silicon substrate, the photoelectric detector chip receives optical signals through an optical window on the tube cap, converts the optical signals into current signals and transmits the current signals to the amplifier chip for amplification, and thus target signals are obtained. According to the photoelectric detection module provided by the invention, the silicon substrate, the photoelectric detector chip and the amplifier chip are vertically stacked and assembled, the size and weight of the photoelectric detection module are reduced, the amplifier is internally integrated, the parasitic capacitance is reduced, the power consumption is reduced, the sensitivity is also improved, and the application range is wide.

Description

Technical Field

[0001] This invention relates to the field of laser alarm photoelectric detection technology, specifically to a miniature laser alarm photoelectric detection module with a large photosensitive surface 2.5D chip stack and its manufacturing method. Background Technology

[0002] With the development of optoelectronic information technology, optoelectronic detection technology is increasingly moving towards miniaturization and integration. Optoelectronic detection technology can efficiently convert optical signals into electrical signals, and its applications are very wide-ranging, playing an important role in many fields such as communication, industrial production, and security defense. Currently, existing laser alarm optoelectronic detection technologies mainly use separate optoelectronic detector chips and amplifier circuit modules combined together. The resulting optoelectronic detectors are large, power-consuming, heavy, and costly, making direct miniaturization and integrated design impossible, and thus unusable in some highly integrated fields.

[0003] Therefore, how to design a photoelectric detection module with high integration, low power consumption and low cost is an urgent problem to be solved. Summary of the Invention

[0004] In view of the shortcomings of the prior art described above, the present invention provides a miniature laser alarm photoelectric detection module with a large photosensitive surface 2.5D chip stack and its manufacturing method, so as to solve at least one of the above-mentioned technical problems.

[0005] To achieve the above and other related objectives, the technical solution provided in this application is as follows.

[0006] In a first aspect, this application provides a miniature laser alarm photoelectric detection module based on a large-area 2.5D chip stack, comprising: A tube seat includes a front side and a back side arranged opposite to each other, and a sealing ring is provided on the front side of the tube seat; A ceramic circuit is disposed on the front side of the tube socket. A groove is provided inside the ceramic circuit. Multiple pins are provided at the bottom of the ceramic circuit to provide power and transmit signals through the pins. A silicon substrate is electrically connected to an amplifier chip and a photodetector chip, respectively, and the amplifier chip and the photodetector chip are respectively disposed on the front and back sides of the silicon substrate. When the silicon substrate is electrically connected to the socket through the ceramic circuit, the amplifier chip is disposed in the groove. A cap covers the photodetector chip, the silicon substrate, and the ceramic circuit, and works in conjunction with the sealing ring for energy storage welding and sealing. A light window is provided on the top of the cap. The photodetector chip receives optical signals through the optical window and converts the optical signals into current signals, which are then sent to the amplifier chip. The amplifier chip amplifies the current signals to obtain the target signal.

[0007] In one embodiment of the present invention, the photodetector module further includes an AC coupling circuit, which includes a plurality of resistors and capacitors. The resistors and capacitors disposed in the groove are electrically connected to the amplifier chip, and the photodetector chip is electrically connected to the silicon substrate through a resistor and / or capacitor disposed on the same side as the photodetector chip.

[0008] In one embodiment of the present invention, five pins are provided at the bottom of the ceramic circuit. The first pin is the power supply terminal of the photoelectric detection module, the second pin is the bias voltage input terminal of the amplifier chip, the third pin is the power supply terminal of the amplifier chip, the fourth pin is the ground terminal, and the fifth pin is the output terminal of the photoelectric detection module, which outputs the target signal to the outside.

[0009] In one embodiment of the present invention, a plurality of first pads are provided on the side of the amplifier chip away from the ceramic circuit, and a second pad is provided on the side of the silicon substrate close to the amplifier chip, wherein the second pads are electrically connected to the first pads in a one-to-one correspondence.

[0010] In one embodiment of the present invention, a plurality of second pads are provided on the front and back sides of the silicon substrate, and the second pads on the front side of the silicon substrate are electrically connected to the second pads on the back side of the silicon substrate through through-silicon vias, and the gain of the amplifier chip is set according to the gold wire.

[0011] In one embodiment of the present invention, a first adhesive layer is disposed in the groove of the ceramic circuit. The first adhesive layer is U-shaped and encapsulates the amplifier chip.

[0012] In one embodiment of the present invention, a plurality of gold wires are disposed within the ceramic circuit, and the five pins and the silicon substrate are electrically connected through the gold wires.

[0013] In one embodiment of the present invention, the amplifier chip includes two amplification units, wherein the first amplification unit and the second amplification unit are AC coupled.

[0014] In one embodiment of the present invention, the silicon substrate and the photodetector chip are connected by a second adhesive layer, and the electrodes on the photodetector chip are electrically connected to the second pad on the side of the silicon substrate opposite to the socket via the gold wire.

[0015] Secondly, this application also provides a method for manufacturing a miniature laser alarm photoelectric detection module with a large photosensitive surface 2.5D chip stack, comprising: A tube seat is provided, the tube seat having a front side and a back side disposed opposite to each other, and a sealing ring is provided on the front side of the tube seat; A ceramic circuit is provided on the front side of the tube socket, and a groove is formed in the ceramic circuit and multiple pins are provided at its bottom; An amplifier chip and a photodetector chip are respectively disposed on the front and back sides of a silicon substrate, and the amplifier chip and the photodetector chip are electrically connected to the silicon substrate respectively. When the silicon substrate is electrically connected to the pins in the socket via the ceramic circuit, the amplifier chip is disposed in the groove; A cap is provided on the side of the photodetector chip away from the socket, and an energy storage welding is performed between the cap and the sealing ring of the socket to seal the photodetector chip, the silicon substrate, and the ceramic circuit.

[0016] This application provides a miniature laser alarm photoelectric detection module with a large photosensitive surface and 2.5D chip stack, and its manufacturing method. The photoelectric detection module includes a socket, a ceramic circuit, an amplifier chip, a silicon substrate, a photodetector chip, and a cap. The photoelectric detection module is packaged by the socket and the cap. The socket is provided with multiple pins for signal transmission. The silicon substrate is electrically connected to the socket through the ceramic circuit. The amplifier chip and the photodetector chip are integrated on the front and back sides of the silicon substrate, achieving a high degree of integration of the photoelectric detection module. The photodetector chip receives the light signal through the light window on the cap, converts the light signal into a current signal, and transmits it to the amplifier chip for amplification, thereby obtaining the target signal. The miniature photoelectric detection module provided by this application vertically stacks and assembles the photodetector chip and amplifier chip on the silicon substrate, which greatly reduces the size and weight of the photoelectric detection module. The amplifier is internally integrated, reducing parasitic capacitance, lowering power consumption, and improving the sensitivity of the photoelectric detection module. It can be widely used in laser alarm devices on various platforms, and can also be used for laser signal detection on handheld devices, light weapons, miniature UAVs, various airborne platforms, miniature laser guidance systems, and other carriers.

[0017] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit the invention. Attached Figure Description

[0018] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with the invention and, together with the description, serve to explain the principles of the invention. It is obvious that the drawings described below are merely some embodiments of the invention, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort. In the drawings: Figure 1 A three-dimensional schematic diagram of a miniature laser alarm photoelectric detection module with a large photosensitive surface 2.5D chip stack, as an exemplary embodiment of the present invention; Figure 2 An exploded three-dimensional view of a miniature laser alarm photoelectric detection module with a large photosensitive surface 2.5D chip stack, as shown in an exemplary embodiment of the present invention; Figure 3 A circuit diagram of a 2.5D chip stacked miniature laser alarm photoelectric detection module is shown as an exemplary embodiment of the present invention. Figure 4 A disassembled diagram of a 2.5D chip stacked micro laser alarm photoelectric detection module base, as shown in an exemplary embodiment of the present invention; Figure 5 A three-dimensional structural diagram of an amplifier chip and a silicon substrate is shown as an exemplary embodiment of the present invention. Figure 6 A cross-sectional view of a miniature laser alarm photoelectric detection module with a large photosensitive surface 2.5D chip stack without the cap, as shown in an exemplary embodiment of the present invention; Figure 7 A flowchart illustrating a method for fabricating a miniature laser alarm photoelectric detection module with a large photosensitive surface 2.5D chip stack, as an exemplary embodiment of the present invention; Explanation of reference numerals in the attached diagram: 110-tube socket; 112-sealing ring; 120-ceramic circuit; 121-lead; 121-first adhesive layer; 130-amplifier chip; 131-gold ball; 140-silicon substrate; 150-photodetector chip; 160-tube cap; 161-light window; 170-AC coupling circuit; 180-gold wire. Detailed Implementation

[0019] The embodiments of the present invention will be described below with reference to the accompanying drawings and preferred embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be understood that the preferred embodiments are only for illustrating the present invention and not for limiting the scope of protection of the present invention.

[0020] It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the present invention. Therefore, the illustrations only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0021] In the following description, numerous details are explored to provide a more thorough explanation of embodiments of the invention. However, it will be apparent to those skilled in the art that embodiments of the invention may be practiced without these specific details. In other embodiments, well-known structures and devices are shown in block diagram form rather than in detail to avoid obscuring embodiments of the invention.

[0022] 2.5D integrated chip stacking technology is an advanced packaging technology that vertically stacks multiple chips and achieves high-density wiring and electrical connections through a silicon substrate, ultimately integrating them into a single unit.

[0023] As mentioned in the background section, the inventors have discovered that with the development of optoelectronic information technology, optoelectronic detection technology is increasingly moving towards miniaturization and integration. Optoelectronic detection technology can efficiently convert light signals into current signals, and its applications are very wide-ranging, playing an important role in multiple fields such as communication, industrial production, and security defense. Currently, existing laser alarm optoelectronic detection technologies mainly use separate optoelectronic detector chips and amplifier circuit modules combined to construct a large, power-consuming, heavy, and costly optoelectronic detection module. This makes direct miniaturization and integrated design impossible, hindering its proper application in some highly integrated fields.

[0024] Based on this, the present invention provides a technical solution for a miniature laser alarm photodetector module with a large photosensitive surface 2.5D chip stack. It is packaged by a tube shell and a tube cap. The ceramic circuit is provided with multiple pins for signal transmission. The ceramic circuit, silicon substrate and photodetector chip are arranged sequentially on the front side of the tube socket. The amplifier chip and photodetector chip are integrated on the front and back sides of the silicon substrate, respectively. When the silicon substrate is electrically connected to the tube socket through the ceramic circuit, the amplifier chip is set in the groove of the ceramic circuit. The provided photodetector module is highly integrated, has low power consumption, small size and high sensitivity.

[0025] Firstly, such as Figure 1-2 As shown, this application provides a miniature laser alarm photoelectric detection module with a large photosensitive surface 2.5D chip stack, including: The tube seat 110 includes a front and a back side arranged opposite to each other, and a sealing ring is provided on the front side of the tube seat 110; A ceramic circuit 120 is disposed on the front side of the tube socket 110. A groove is provided inside the ceramic circuit 120. Multiple pins are provided at the bottom of the ceramic circuit 120 to provide power and transmit signals through pins 121. The silicon substrate 140 is electrically connected to the amplifier chip 130 and the photodetector chip 150 respectively, and the amplifier chip 130 and the photodetector chip 150 are respectively disposed on the front and back sides of the silicon substrate 140. When the silicon substrate 140 is electrically connected to the socket 110 through the ceramic circuit 120, the amplifier chip 130 is disposed in the groove. The cap 160 covers the photodetector chip 150, silicon substrate 140, and ceramic circuit 120, and is sealed with the sealing ring by energy storage welding. The top of the cap 160 is provided with a light window 161. The photodetector chip 150 receives the optical signal through the optical window 161 and converts the optical signal into a current signal, which is then sent to the amplifier chip 130. The amplifier chip 130 amplifies the current signal to obtain the target signal.

[0026] It should be noted that the amplifier chip 130 and the photodetector chip 150 can be integrated on the silicon substrate 140 using 2.5D integrated chip stacking technology.

[0027] In detail, the miniature laser alarm photodetector module with a large photosensitive surface 2.5D chip stack also includes an AC coupling circuit 170, which includes multiple resistors and capacitors. The resistors and capacitors disposed in the recess are electrically connected to the amplifier chip 130, and the photodetector chip 150 is electrically connected to the silicon substrate 140 through resistors and / or capacitors disposed on the same side as the photodetector chip 150. Specifically, as... Figure 2 As shown, the photoelectric detection module also includes an AC coupling circuit 170. The AC coupling circuit 170 includes resistors and capacitors for AC coupling between the photodetector chip 150 and the amplifier chip 130, as well as resistors and capacitors for AC coupling between the two amplification units in the amplifier chip 130. Resistors and capacitors disposed in the groove of the ceramic circuit 120 are electrically connected to the amplifier chip 130. The photodetector chip 150 is electrically connected to the silicon substrate 140 via a resistor disposed on the front side of the silicon substrate 140, or via a resistor and capacitor disposed on the front side of the silicon substrate 140, or via a capacitor disposed on the front side of the silicon substrate 140. The resistors and capacitors disposed on the front side of the silicon substrate 140 are set according to the actual situation.

[0028] It should be noted that, as Figure 3 As shown, the working principle of the photoelectric detection module includes a photodetector chip 150, an AC coupling circuit 170, and an amplifier chip 130. The photodetector chip 150 is... Figure 3The photodetector chip (PD) shown employs a large photosensitive surface InGaAs (indium gallium arsenide) design; the AC coupling circuit 170 includes a first resistor R1, a second resistor R2, a first capacitor C1, and a second capacitor C2; the amplifier chip 130 includes a two-stage amplification unit. For example... Figure 3 As shown, the cathode of the photodetector chip (PD) is connected to the first power supply VCC1 of the photodetector module, which is 24V. The anode of the photodetector chip (PD) is grounded through the first resistor R1. The first terminal of the first capacitor C1 is connected to the anode of the photodetector chip (PD). The second terminal of the first capacitor C1 is connected to the inverting input terminal of the first stage amplification unit. The output terminal of the first stage amplification unit is connected to the inverting input terminal of the second stage amplification unit through the second capacitor C2 and the second resistor R2. The first-stage amplification unit includes a feedback capacitor Cf1, a feedback resistor Rf1, and an operational amplifier U1. The inverting input of operational amplifier U1 is connected to its output via the feedback capacitor Cf1. The feedback resistor Rf1 is connected in parallel with the feedback capacitor Cf1. The power supply of operational amplifier U1 is connected to a second power supply VCC2, which is 2V. The non-inverting input of operational amplifier U1 is connected to a bias voltage V1. The second-stage amplification unit includes a feedback capacitor Cf2, a feedback resistor Rf2, and an operational amplifier U2. The inverting input of operational amplifier U2 is connected to its output via the feedback capacitor Cf2. The feedback resistor Rf2 is connected in parallel with the feedback capacitor Cf2. The power supply of operational amplifier U2 is connected to a second power supply VCC2. The non-inverting input of operational amplifier U2 is connected to a bias voltage V1, which is 1V. The operating current of the amplification unit is 0.017A.

[0029] The photodetector chip (PD) has a photosensitive surface diameter > Φ1000μm, providing a large photosensitive area for laser detection and improving the detection light power. The PD chip is fabricated using a complex multilayer epitaxial material structure, with a spectral response range of 0.9~1.7μm and a laser responsivity ≥0.8A / W at a wavelength of 1.06μm. It has the advantages of low parasitic capacitance and high sensitivity.

[0030] Specifically, the bottom of the ceramic circuit 120 is equipped with five pins 121. The first pin 121 is the power supply terminal of the photoelectric detection module, the second pin 121 is the bias voltage input terminal of the amplifier chip 130, the third pin 121 is the power supply terminal of the amplifier chip 130, the fourth pin 121 is the ground terminal, and the fifth pin 121 is the output terminal of the photoelectric detection module, which outputs the target signal. Specifically, as shown... Figure 4As shown, five pins 121 are provided on the back of the socket 110. The first pin 121 is the power supply terminal of the photodetector chip (PD) and is connected to the first power supply VCC1. The second pin 121 is the bias voltage input terminal of each amplification unit in the amplifier chip 130 and is connected to the bias voltage V1. The third pin 121 is the power supply terminal of each amplification unit in the amplifier chip 130 and is connected to the second power supply VCC2. The fourth pin is the ground terminal. The fifth pin 121 is the output terminal V0 of the second stage amplification unit, that is, the output terminal of the photodetector module, to output the target signal to the outside.

[0031] In detail, the amplifier chip 130 has multiple first pads on the side opposite to the socket 110, and the silicon substrate 140 has second pads on the side closer to the amplifier chip 130. The second pads are electrically connected to the first pads in a one-to-one correspondence. Figure 5 As shown, the amplifier chip 130 has 20 first pads on the side near the silicon substrate 140, and gold balls 131 with a diameter of 80μm are disposed on the 20 pads. The silicon substrate 140 has 20 second pads on the side near the amplifier chip 130, and the second pads are connected to the first pads one by one to achieve electrical connection.

[0032] More specifically, the silicon substrate 140 has multiple second pads on its front and back sides, and the second pads on the front side of the silicon substrate 140 are electrically connected to the second pads on the back side of the silicon substrate 140 through through-silicon vias, corresponding one-to-one, and the gain of the amplifier chip 130 is set according to the gold wire 180. Specifically, as shown... Figure 1 As shown, the silicon substrate 140 has multiple second pads on both the front and back sides. The silicon substrate 140 uses TSV (Through Silicon Via) technology to connect the second pads on the back side and the second pads on the front side. The configuration signal of the amplifier chip 130 on the back side is led to the second pad on the front side of the silicon substrate 140 through TSV and set to a high level or low level by gold wire bonding, so as to flexibly configure the first-stage gain, feedback capacitor, second-stage gain and bandwidth in the amplifier chip 130. The size of the silicon substrate 140 can be 3mm*3mm.

[0033] Specifically, a first adhesive layer 121 is disposed within the recess of the ceramic circuit 120. The first adhesive layer 121 is U-shaped and encapsulates the amplifier chip 130. For example... Figure 6As shown, a groove is provided in the ceramic circuit 120, and a first adhesive layer 121 is filled in the groove. An amplifier chip 130 is disposed in the first adhesive layer 121. The sides and bottom of the amplifier chip 130 are in contact with the first adhesive layer 121, and the top of the amplifier chip 130 is in contact with the silicon substrate 140. The first adhesive layer 121 conducts heat and reinforces the amplifier chip 130. The first adhesive layer 121 can be DU986 filler adhesive.

[0034] More specifically, the top of the ceramic circuit 120 has multiple pads, and five pins 121 and the silicon substrate 140 are electrically connected via multiple bonding wires 180 disposed within the ceramic circuit 120. Specifically, as... Figure 6 As shown, five gold wires 180 are provided inside the ceramic circuit 120, and the five pins 121 on the ceramic circuit 120 are electrically connected to the solder pads on the top of the ceramic circuit 120 through the five gold wires 180.

[0035] More specifically, the amplifier chip 130 includes two amplification stages, with resistors and capacitors in an AC coupling circuit 170 connected in series between the first and second amplification stages. For example... Figure 3 As shown, the amplifier chip 130 includes a first-stage amplification unit and a second-stage amplification unit. A second resistor R2 and a second capacitor C2 from the AC coupling circuit 170 are connected in series between the first-stage and second-stage amplification units. Each pin in the amplification unit is led out to a first pad of the amplifier chip 130. External configuration of these first pads to high or low levels adjusts the parameters of the amplifier chip 130, such as gain and bandwidth. The gain of the first-stage amplification unit can be configured from 6K to 43K ohms (8 levels), and the feedback capacitor from 0.05pF to 0.5pF (8 levels). The gain of the second-stage amplification unit can be configured from 1x to 4x (4 levels), and the bandwidth can be configured from 20MHz to 120MHz. At 25MHz, the integral noise is as low as 25nW.

[0036] It should be noted that the silicon substrate 140 and the photodetector chip 150 are connected by a second adhesive layer, and the electrodes on the photodetector module are electrically connected to the second pad on the top layer of the silicon substrate 140 via gold wires 180. Figure 6 As shown, a second adhesive layer is disposed between the silicon substrate 140 and the photodetector chip 150. The second adhesive layer is used to fix the silicon substrate 140 and the photodetector chip 150, and the electrodes of the photodetector chip 150 are electrically connected to the second pad on the front side of the silicon substrate 140 through the gold wire 180. The second adhesive layer is a conductive adhesive.

[0037] Secondly, such as Figure 7 As shown, this application provides a method for manufacturing a miniature laser alarm photoelectric detection module with a large photosensitive surface 2.5D chip stack. S710, a tube seat 110 is provided, the tube seat 110 includes a front side and a back side disposed opposite to each other, and a sealing ring 112 is provided on the front side of the tube seat 110; S720, A ceramic circuit 120 is provided on the front side of the tube socket 110, and a groove is formed in the ceramic circuit 120 and a plurality of pins 121 are provided at its bottom; S730. An amplifier chip 130 and a photodetector chip 150 are respectively disposed on the front and back sides of the silicon substrate 140, and the amplifier chip 130 and the photodetector chip 150 are electrically connected to the silicon substrate 140 respectively. S740. When the silicon substrate 140 is electrically connected to the pin in the socket 110 via the ceramic circuit 120, the amplifier chip 130 is disposed in the recess. S750, a cap 160 is provided on the side of the photodetector chip 150 away from the socket 110, and an energy storage soldering is performed between the cap 160 and the sealing ring of the socket 110 to seal the photodetector chip 150, the silicon substrate 140 and the ceramic circuit 120.

[0038] Specifically, in S710, a tube socket 110 is provided, which includes a front and a back side arranged opposite to each other. A sealing ring is provided on the front side of the tube socket 110. The design incorporates a metal-ceramic hybrid tube socket and a metal cap with an optical window. The tube socket 110 is made of HTCC (high-temperature ceramic), and five metal pins are sintered at the bottom of the tube socket 110. A Φ3mm optical window is designed on the top of the cap, with an anti-reflection film on the window to ensure a transmittance of >99% for 1.06µm wavelength light and >99% for 1.55µm wavelength light.

[0039] In step S720, a ceramic circuit 120 is disposed on the front side of the tube socket 110. A groove is formed in the ceramic circuit 120, and five pins are disposed at the bottom of the ceramic circuit 120. Specifically, the ceramic circuit 120 is disposed on the front side of the tube socket 110, and the ceramic circuit 120 is electrically connected to the pins 121 disposed on the back side of the tube socket 110. A groove is formed in the ceramic circuit 120 by etching or other processes, and five pins are disposed at the bottom of the ceramic circuit 120.

[0040] In step S730, an amplifier chip 130 and a photodetector chip 150 are respectively disposed on the front and back sides of the silicon substrate 140, and the amplifier chip 130 and the photodetector chip 150 are electrically connected to the silicon substrate 140. Specifically, the layout of the silicon substrate 140 is obtained, and the layout adopts two layers of high-density wiring on the front side and a single layer of wiring on the back side. TSV (Through Silicon Via) is used to realize signal interconnection between the front and back sides. An amplifier chip 130 is arranged on the back side of the silicon substrate 140. A corresponding number of first pads are arranged on the side of the amplifier chip 130 closest to the silicon substrate 140. The power supply pad, bias voltage pad, signal conditioning pad, input signal pad, and output signal pad of the amplifier chip 130 are led to the front side of the silicon substrate 140 through TSV. The central area of ​​the front side of the silicon substrate 140 is provided with a photodetector chip 150 mounting pad, a photodetector chip 150 power supply voltage pad, a photodetector chip 150 output pad, and the power supply pad, bias voltage pad, signal conditioning pad, input signal pad, output signal pad, high level pad, and ground pad of the amplifier chip 130.

[0041] When mounting the amplifier chip 130 on the back side of the silicon substrate 140, the amplifier chip 130 with gold balls attached is soldered to the back side of the silicon substrate 140 using a soldering device. Temperature, pressure, and other parameters are carefully controlled to ensure good and reliable bonding of the gold balls. Resistors and capacitors are then mounted on the back side of the silicon substrate 140. Thermally and electrically conductive adhesive is used to mount the AC coupling resistors and capacitors between the primary and secondary stages of the amplifier chip 130, followed by baking and curing.

[0042] In step S740, when the silicon substrate 140 is electrically connected to the pins in the socket 110 via the ceramic circuit 120, the amplifier chip 130 is disposed in the groove. Specifically, when the silicon substrate 140 is electrically connected to the ceramic circuit 120, an appropriate amount of DU986 filler adhesive is filled into the ceramic circuit 120. The silicon substrate 140 is mounted on the side of the ceramic circuit 120 away from the socket 110. On the side of the ceramic circuit 120 away from the socket 110, the back of the silicon substrate 140 is placed on the top of the ceramic circuit 120. The amplifier chip 130 is immersed in the filler adhesive, and the filler adhesive fills the gap between the gold ball and the silicon substrate. Precise alignment is performed to ensure that the silicon substrate 140 is centered in the socket 110. Then, curing is performed. The filler adhesive can mechanically reinforce the amplifier chip 130 and the silicon substrate 140, while also providing good thermal conductivity.

[0043] Specifically, a first resistor R1, a first capacitor C1, and a photodetector chip 150 are mounted on the front side of the silicon substrate 140. Thermally and electrically conductive adhesive is used to mount the resistor, capacitor, and photodetector chip 150 onto the front side of the silicon substrate 140. During mounting, the center of the photosensitive surface of the photodetector chip 150 is aligned with the center of the housing base, with an error of less than 20μm, and then baked and cured. Gold wire bonding is used to bond the corresponding configuration pads, photodetector chip 150 bias voltage pads, output pads, silicon substrate pads, and ceramic circuit pads according to the first-stage gain, first-stage feedback capacitor, and second-stage gain parameters of the amplifier chip 130.

[0044] In step S750, a cap 160 is placed on the side of the photodetector chip 150 away from the socket 110. Energy storage welding is performed between the cap 160 and the sealing ring of the socket 110 to seal the photodetector chip 150, silicon substrate 140, and ceramic circuit 120. The cap 160 with the light window 161 is placed on the side of the photodetector module 150 away from the socket 110 and sealed by welding. The cap 160 seals the photodetector chip 150, silicon substrate 140, and ceramic circuit 120, so that the socket 110 and the cap 160 are sealed by the sealing ring 112 on the front of the socket 110, achieving coaxial hermetic assembly.

[0045] This application provides a miniature laser alarm photodetector module with a large photosensitive surface and 2.5D chip stack and its manufacturing method. The photodetector module includes a socket, a ceramic circuit, an amplifier chip, a silicon substrate, a photodetector chip, and a cap. The photodetector module is hermetically sealed by the socket and the cap. The silicon substrate is electrically connected to the socket through the ceramic circuit. The ceramic circuit is provided with multiple pins for signal transmission. The amplifier chip and the photodetector chip are integrated on the front and back sides of the silicon substrate, achieving a high degree of integration of the photodetector module. The photodetector chip receives the light signal through the light window on the cap, converts the light signal into a current signal, and transmits it to the amplifier chip for amplification, thereby obtaining the target signal. The miniature laser alarm photodetector module with a large photosensitive surface and 2.5D chip stack provided in this application vertically stacks and assembles the photodetector chip and amplifier chip on a silicon substrate, which greatly reduces the size and weight of the photodetector module. The amplifier is internally integrated, reducing parasitic capacitance, lowering power consumption, and improving the sensitivity of the photodetector module. The bandwidth and gain can be flexibly configured through different bonding points, and it can be widely used in laser alarm devices on various platforms. It can also be used for laser signal detection on handheld devices, light weapons, micro-UAVs, various airborne platforms, micro-laser guidance systems, and other carriers.

[0046] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A miniature laser alarm photoelectric detection module with a large photosensitive surface and 2.5D chip stacking, characterized in that, include: A tube seat includes a front side and a back side arranged opposite to each other, and a sealing ring is provided on the front side of the tube seat; A ceramic circuit is disposed on the front side of the tube socket. A groove is provided inside the ceramic circuit. Multiple pins are provided at the bottom of the ceramic circuit to provide power and transmit signals through the pins. A silicon substrate is electrically connected to an amplifier chip and a photodetector chip, respectively, and the amplifier chip and the photodetector chip are respectively disposed on the front and back sides of the silicon substrate. When the silicon substrate is electrically connected to the socket through the ceramic circuit, the amplifier chip is disposed in the groove. A cap covers the photodetector chip, the silicon substrate, and the ceramic circuit, and works in conjunction with the sealing ring for energy storage welding and sealing. A light window is provided on the top of the cap. The photodetector chip receives optical signals through the optical window and converts the optical signals into current signals, which are then sent to the amplifier chip. The amplifier chip amplifies the current signals to obtain the target signal.

2. The miniature laser alarm photoelectric detection module with a large photosensitive surface 2.5D chip stack as described in claim 1, characterized in that, The photoelectric detection module also includes an AC coupling circuit, which includes multiple resistors and capacitors. The resistors and capacitors disposed in the groove are electrically connected to the amplifier chip. The photoelectric detector chip is electrically connected to the silicon substrate through a resistor and / or capacitor disposed on the same side as the photoelectric detector chip.

3. The miniature laser alarm photoelectric detection module with large photosensitive surface 2.5D chip stacking according to claim 1, characterized in that, The bottom of the ceramic circuit has five pins. The first pin is the power supply terminal of the photoelectric detection module, the second pin is the bias voltage input terminal of the amplifier chip, the third pin is the power supply terminal of the amplifier chip, the fourth pin is the ground terminal, and the fifth pin is the output terminal of the photoelectric detection module, which outputs the target signal to the outside.

4. The miniature laser alarm photoelectric detection module with large photosensitive surface 2.5D chip stacking according to claim 1, characterized in that, The amplifier chip has multiple first pads on the side away from the ceramic circuit, and the silicon substrate has second pads on the side closer to the amplifier chip. The second pads are electrically connected to the first pads in a one-to-one correspondence.

5. The miniature laser alarm photoelectric detection module with large photosensitive surface 2.5D chip stacking according to claim 4, characterized in that, The silicon substrate has multiple second pads on its front and back sides, and the second pads on the front side of the silicon substrate are electrically connected to the second pads on the back side of the silicon substrate through through-silicon vias, and the gain of the amplifier chip is set according to the gold wire.

6. The miniature laser alarm photoelectric detection module with large photosensitive surface 2.5D chip stacking according to claim 1, characterized in that, A first adhesive layer is disposed in the groove of the ceramic circuit. The first adhesive layer is U-shaped and encapsulates the amplifier chip.

7. The miniature laser alarm photoelectric detection module with large photosensitive surface 2.5D chip stacking according to claim 5, characterized in that, The ceramic circuit contains multiple gold wires, which electrically connect five pins and the silicon substrate.

8. The miniature laser alarm photoelectric detection module with large photosensitive surface 2.5D chip stacking according to claim 2, characterized in that, The amplifier chip includes two amplification units, with the first and second amplification units being AC-coupled.

9. The miniature laser alarm photoelectric detection module with large photosensitive surface 2.5D chip stacking according to claim 5, characterized in that, The silicon substrate and the photodetector chip are connected by a second adhesive layer, and the electrodes on the photodetector chip are electrically connected to the second pad on the side of the silicon substrate opposite to the socket via the gold wire.

10. A method for manufacturing a miniature laser alarm photoelectric detection module with a large photosensitive surface and 2.5D chip stacking, characterized in that, include: A tube seat is provided, the tube seat having a front side and a back side disposed opposite to each other, and a sealing ring is provided on the front side of the tube seat; A ceramic circuit is provided on the front side of the tube socket, and a groove is formed in the ceramic circuit and multiple pins are provided at its bottom; An amplifier chip and a photodetector chip are respectively disposed on the front and back sides of a silicon substrate, and the amplifier chip and the photodetector chip are electrically connected to the silicon substrate respectively. When the silicon substrate is electrically connected to the pins in the socket via the ceramic circuit, the amplifier chip is disposed in the groove; A cap is provided on the side of the photodetector chip away from the socket, and an energy storage welding is performed between the cap and the sealing ring of the socket to seal the photodetector chip, the silicon substrate, and the ceramic circuit.

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