Differential matching structure

Abstract

This invention relates to the field of wireless communication technology and provides a differential matching structure. The differential matching structure includes a first metal layer, a second metal layer, and a third metal layer stacked sequentially and insulated from each other, as well as a capacitor. A first coupling coil is integrated on the second metal layer, and a second coupling coil and a third coupling coil are integrated on the first metal layer, located on the same side of the first metal layer. The third metal layer is used for grounding. A first end of the first coupling coil is used to receive a radio frequency (RF) signal, and a second end of the first coupling coil is connected to ground via a capacitor connected in series. The first ends of the second and third coupling coils are connected and jointly connected to the third metal layer. The second ends of the second and third coupling coils are used to output RF signals. The first coupling coil is coupled to both the second and third coupling coils. This invention results in low return loss and good wideband matching performance.

Description

Technical Field

[0001] This invention relates to the field of wireless communication technology, and in particular to a differential matching structure. Background Technology

[0002] With the continuous development of Wi-Fi (Wireless Fidelity) technology, the demand for throughput in Wi-Fi communication is increasing. Increasing signal bandwidth can effectively improve data throughput. Wi-Fi 7 technology has expanded its frequency band from 5.1GHz to 7.125GHz, thus presenting a matching challenge for the ultra-wide bandwidth of 2GHz. For example, the impedance difference between 5.1GHz and 7.125GHz is significant, making it difficult for conventional structures to achieve 50Ω matching across the entire frequency band, resulting in band edge mismatch; and the increased influence of distributed parameters within the ultra-wide frequency band leads to deterioration in the performance of the matching network.

[0003] Related technologies often employ multi-stage segmented matching or adjustable component compensation, typically including a first inductor, a second inductor, and a third inductor. The first inductor is connected to the RF input, and the first inductor is coupled to the second and third inductors to output a differential matching signal. The first metal layer of the first inductor is spaced apart from the metal layers of the second and third inductors, and all three inductors have rectangular winding structures. However, this inductor structure provides poor differential matching performance across the entire 5.1GHz-7.125GHz frequency band. Summary of the Invention

[0004] To address the shortcomings of the existing technologies, this invention proposes a differential matching structure to solve the problem of poor differential matching performance in existing differential matching structures.

[0005] To solve the above-mentioned technical problems, the present invention adopts the following technical solution:

[0006] This invention provides a differential matching structure, comprising a first metal layer, a second metal layer, and a third metal layer stacked sequentially and insulated from each other, and a capacitor. A first coupling coil is integrated on the second metal layer, and a second coupling coil and a third coupling coil are integrated on the first metal layer. The second and third coupling coils are located on the same side of the first metal layer, facing each other and spaced apart. The third metal layer is used for grounding. A first end of the first coupling coil is used to receive a radio frequency (RF) signal, and a second end of the first coupling coil is connected to the capacitor and then grounded. The first ends of the second and third coupling coils are connected and jointly connected to the third metal layer. The second end of the second and third coupling coils is used to output an RF signal. The first coupling coil is coupled to both the second and third coupling coils.

[0007] The first coupling coil includes a first coil, a second coil, and a third coil respectively disposed on the same surface of the second metal layer; the first coil and the third coil are disposed opposite each other, and the second coil is disposed between the first coil and the third coil and spaced apart from each other; the first end of the first coil serves as the first end of the first coupling coil, the second end of the first coil is connected to the first end of the second coil, the second end of the second coil is connected to the first end of the third coil, and the second end of the third coil serves as the second end of the first coupling coil;

[0008] The second coupling coil includes a fourth coil, a fifth coil, and a sixth coil, respectively disposed on the same surface of the first metal layer; the fourth coil, the fifth coil, and the sixth coil are spaced apart from each other, the fourth coil and the fifth coil are respectively wrapped around opposite sides of the first coil and spaced apart from each other, and the sixth coil is wrapped around the inner side of the second coil and spaced apart from each other; the first end of the fourth coil serves as the first end of the second coupling coil, and the second end of the fourth coil serves as the second end of the second coupling coil; the fourth coil, the fifth coil, and the sixth coil are connected in parallel through the first metal layer;

[0009] The third coupling coil includes a seventh coil, an eighth coil, and a ninth coil, respectively disposed on the same surface of the first metal layer; the seventh coil, the eighth coil, and the ninth coil are spaced apart from each other, the seventh coil and the eighth coil are respectively wrapped around opposite sides of the third coil and spaced apart from each other, and the ninth coil is wrapped around the inner side of the third coil and spaced apart from each other; the first end of the seventh coil serves as the first end of the third coupling coil, and the second end of the seventh coil serves as the second end of the third coupling coil; the seventh coil, the eighth coil, and the ninth coil are connected in parallel through the first metal layer; the seventh coil, the eighth coil, and the ninth coil are respectively positioned opposite the fourth coil, the fifth coil, and the sixth coil.

[0010] Preferably, the first coil, the second coil, and the third coil are connected in series through a first metal via; the fourth coil, the fifth coil, and the sixth coil are connected in parallel through a second metal via; and the seventh coil, the eighth coil, and the ninth coil are connected in parallel through a third metal via; the first metal via is formed in the second metal layer, and the second metal via and the third metal via are formed in the first metal layer.

[0011] Preferably, the second coupling coil and the third coupling coil are arranged in an alternating pattern.

[0012] Preferably, the spacing between the second coupling coil and the third coupling coil is 1.5um-4.5um.

[0013] Preferably, the first metal layer, the second metal layer, and the third metal layer are all made of nickel-gold alloy.

[0014] Preferably, the thickness of the first metal layer is 0.5um-1.5um, the thickness of the second metal layer is 2um-3um, and the thickness of the third metal layer is 2um-3um.

[0015] Preferably, the differential matching structure further includes a wafer layer and a first isolation layer, wherein the wafer layer is located on the side of the first metal layer away from the second metal layer, and the first isolation layer is disposed between the wafer layer and the first metal layer.

[0016] Preferably, the differential matching structure further includes a first intermediate dielectric layer and a second intermediate dielectric layer, wherein the first intermediate dielectric layer is disposed between the first metal layer and the second metal layer, and the second intermediate dielectric layer is disposed between the second metal layer and the third metal layer.

[0017] Preferably, the first intermediate dielectric layer includes a second isolation layer, a first dielectric layer, and a second dielectric layer stacked sequentially; the side of the second isolation layer away from the second metal layer is fixed to the first metal layer, and the side of the second dielectric layer close to the second metal layer is fixed to the second metal layer.

[0018] Preferably, the differential matching structure further includes a fourth metal via, which is formed through the second dielectric layer, and the second metal layer and the first dielectric layer are connected through the fourth metal via.

[0019] Compared with related technologies, in the embodiments of the present invention, a first metal layer, a second metal layer, a third metal layer, and a capacitor are sequentially stacked. A first coupling coil is integrated on the second metal layer, and a second coupling coil and a third coupling coil are integrated on the first metal layer. The third metal layer is used for grounding. The first coupling coil includes a first coil, a second coil, and a third coil respectively disposed on the same surface of the second metal layer. The second coupling coil includes a fourth coil, a fifth coil, and a sixth coil respectively disposed on the same surface of the first metal layer. The fourth, fifth, and sixth coils are connected in parallel through the first metal layer. The third coupling coil includes a seventh coil, an eighth coil, and a third coil respectively disposed on the same surface of the first metal layer. The ninth coil; the seventh and eighth coils are located on both sides of the third coil and are spaced apart from the third coil respectively, and the eighth and ninth coils are located on opposite sides of the second coil; the first end of the seventh coil serves as the first end of the third coupling coil, and the second end of the seventh coil serves as the second end of the third coupling coil; the seventh, eighth, and ninth coils are connected in parallel through the first metal layer; the seventh, eighth, and ninth coils are respectively positioned opposite the fourth, fifth, and sixth coils; the first coupling coil is coupled to the second and third coupling coils respectively. By utilizing the relative positions of the first to ninth coils, the differential matching of WiFi 7 ultra-wideband can be improved, resulting in low return loss and good wideband matching effect. Attached Figure Description

[0020] The present invention will now be described in detail with reference to the accompanying drawings. The above and other aspects of the present invention will become clearer and more readily understood through the detailed description following the accompanying drawings. In the drawings:

[0021] Figure 1 This is a top view of the differential matching structure provided in an embodiment of the present invention;

[0022] Figure 2 The circuit diagram corresponding to the differential matching structure provided in the embodiments of the present invention;

[0023] Figure 3 This is a top view of the metal layer of the differential matching structure provided in an embodiment of the present invention;

[0024] Figure 4 This is a schematic diagram of the coupling coil of the differential matching structure provided in an embodiment of the present invention;

[0025] Figure 5 This is a schematic diagram of the differential matching structure provided in an embodiment of the present invention;

[0026] Figure 6 This is a schematic diagram of the capacitor structure of the differential matching structure provided in an embodiment of the present invention;

[0027] Figure 7 A simulation diagram of the matching interpolation of the differential matching structure provided in an embodiment of the present invention;

[0028] Figure 8 A simulation diagram of the input return loss of the differential matching structure provided in an embodiment of the present invention;

[0029] Figure 9 A simulation diagram of the output return loss of the differential matching structure provided in the embodiment of the present invention;

[0030] Figure 10 This is a three-dimensional structural diagram of the differential matching structure provided in an embodiment of the present invention;

[0031] Figure 11 for Figure 10 Top view;

[0032] Figure 12 for Figure 10 A bottom view;

[0033] Figure 13 for Figure 10 The left view.

[0034] Among them, 100 is a differential matching structure, 1 is a first metal layer, 2 is a second metal layer, 3 is a third metal layer, 4 is a first coupling coil, 41 is a first coil, 42 is a second coil, 43 is a third coil, 5 is a second coupling coil, 51 is a fourth coil, 52 is a fifth coil, 53 is a sixth coil, 6 is a third coupling coil, 61 is a seventh coil, 62 is an eighth coil, 63 is a ninth coil, 7 is a wafer layer, 8 is a first isolation layer, 9 is a first intermediate dielectric layer, 91 is a second isolation layer, 92 is a first dielectric layer, 93 is a second dielectric layer, 10 is a second intermediate dielectric layer, 11 is a first metal via, 12 is a second metal via, 13 is a third metal via, and 14 is a fourth metal via. Detailed Implementation

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein in the specification of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "comprising" and "having," and any variations thereof, in the specification, claims, and foregoing drawings of this application, are intended to cover non-exclusive inclusion. The terms "first," "second," etc., in the specification, claims, or foregoing drawings of this application are used to distinguish different objects, not to describe a particular order.

[0036] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0037] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0038] Please see Figures 1-13 As shown, this embodiment of the invention provides a differential matching structure 100, which includes a first metal layer 1, a second metal layer 2, and a third metal layer 3 stacked sequentially and insulated from each other, and a capacitor C1. A first coupling coil 4 is integrated on the second metal layer 2, and a second coupling coil 5 and a third coupling coil 6 are integrated on the first metal layer 1. The second coupling coil 5 and the third coupling coil 6 are located on the same side of the first metal layer 1, facing each other and spaced apart. The third metal layer 3 is used for grounding. The first end of the first coupling coil 4 is used to receive a radio frequency signal, and the second end of the first coupling coil 4 is connected in series with the capacitor C1 and then grounded. The first end of the second coupling coil 5 and the first end of the third coupling coil 6 are connected and jointly connected to the third metal layer 3. The second end of the second coupling coil 5 is used to output a radio frequency signal, and the second end of the third coupling coil 6 is used to output a radio frequency signal. The first coupling coil 4 is coupled to both the second coupling coil 5 and the third coupling coil 6.

[0039] The first coupling coil 4 includes a first coil 41, a second coil 42, and a third coil 43 respectively disposed on the same surface of the second metal layer 2; the first coil 41 and the third coil 43 are arranged opposite each other, and the second coil 42 is disposed between the first coil 41 and the third coil 43 and spaced apart from each other; the first end of the first coil 41 serves as the first end of the first coupling coil 4, the second end of the first coil 41 is connected to the first end of the second coil 42, the second end of the second coil 42 is connected to the first end of the third coil 43, and the second end of the third coil 43 serves as the second end of the first coupling coil 4. The first coil 41, the second coil 42, and the third coil 43 are connected in series. The first coil 41 and the third coil 43 are opposite each other and have the same structure, and the second coil 42 is used to connect the first coil 41 and the third coil 43. The second coil 42 has a ring structure and an opening, and the opening of the second coil 42 is used to connect the first coil 41 and the third coil 43 respectively. The first coil 41 and the third coil 43 have a semi-ring structure and are respectively spaced apart outside the second coil 42. Where d is the first coil 41, e is the second coil 42, and f is the third coil 43.

[0040] The second coupling coil 5 includes a fourth coil 51, a fifth coil 52, and a sixth coil 53 respectively disposed on the same surface of the first metal layer 1; the fourth coil 51, the fifth coil 52, and the sixth coil 53 are spaced apart from each other, the fourth coil 51 and the fifth coil 52 are respectively wrapped around opposite sides of the first coil 41 and are spaced apart from the first coil 41, and the sixth coil 53 is wrapped around the inner side of the second coil 42 and is spaced apart from the second coil 42; the first end of the fourth coil 51 serves as the first end of the second coupling coil 5, and the second end of the fourth coil 51 serves as the second end of the second coupling coil 5; the fourth coil 51, the fifth coil 52, and the sixth coil 53 are connected in parallel through the first metal layer 1. The fourth coil 51, the fifth coil 52, and the sixth coil 53 are all semi-circular ring structures, the first coil 41 is disposed between the fourth coil 51 and the fifth coil 52, and the second coil 42, which is half of the first coil 41, is disposed between the fifth coil 52 and the sixth coil 53. The fourth coil 51 is wrapped around the outside of the first coil 41, and the fifth coil 52 is wrapped around the inside of the first coil 41.

[0041] The third coupling coil 6 includes a seventh coil 61, an eighth coil 62, and a ninth coil 63 respectively disposed on the same surface of the first metal layer 1; the seventh coil 61, the eighth coil 62, and the ninth coil 63 are spaced apart from each other, the seventh coil 61 and the eighth coil 62 are respectively wrapped around opposite sides of the third coil 43 and are spaced apart from each other, and the ninth coil 63 is wrapped around the inner side of the third coil 43 and is spaced apart from each other; the first end of the seventh coil 61 serves as the first end of the third coupling coil 6, and the second end of the seventh coil 61 serves as the second end of the third coupling coil 6; the seventh coil 61, the eighth coil 62, and the ninth coil 63 are connected in parallel through the first metal layer 1; the seventh coil 61, the eighth coil 62, and the ninth coil 63 are respectively arranged opposite to the fourth coil 51, the fifth coil 52, and the sixth coil 53. The seventh coil 61, eighth coil 62, and ninth coil 63 are all semi-circular ring structures. The third coil 43 is positioned between the seventh coil 61 and the eighth coil 62. The second coil 42, which is parallel to the third coil 43, is positioned between the eighth coil 62 and the ninth coil 63. The first coupling coil 4 is coupled to the second coupling coil 5 and the third coupling coil 6 respectively. The relative positions of the first coil 41 to the ninth coil 63 improve the differential matching of Wi-Fi 7 ultra-wideband, resulting in low return loss and good wideband matching performance. The seventh coil 61 is wrapped around the outside of the third coil 43, and the eighth coil 62 is wrapped around the inside of the third coil 43. A1 is the fourth coil 51, b1 is the fifth coil 52, and c1 is the sixth coil 53. A2 is the seventh coil 61, b2 is the eighth coil 62, and c2 is the ninth coil 63. An X-axis and a Y-axis are provided on the horizontal plane, and the X-axis and Y-axis are perpendicular to each other. 42um is the metal spacing of the ninth coil 63 along the X-axis, and 256um is the maximum distance from the metal edges of the fourth coil 51 and the seventh coil 61 to the metal edge of the first coupling coil 4 along the X-axis. 110um is the maximum metal spacing between the sixth coil 53 and the ninth coil 63 along the Y-axis, and 294um is the maximum metal spacing between the fourth coil 51 and the seventh coil 61 along the Y-axis.

[0042] Specifically, the first coil 41 to the third coil 43 are formed with metal wires of uniform width of 10um, and the fourth coil 51 to the ninth coil 63 are all formed with metal wires of width of 20um.

[0043] In this embodiment, the first coil 41, the second coil 42, and the third coil 43 are connected in series through a first metal via 11; the fourth coil 51, the fifth coil 52, and the sixth coil 53 are connected in parallel through a second metal via 12; and the seventh coil 61, the eighth coil 62, and the ninth coil 63 are connected in parallel through a third metal via 13. The first metal via 11 is formed on the second metal layer 2, and the second metal via 12 and the third metal via 13 are formed on the first metal layer 1. The first metal via 11, the second metal via 12, and the third metal via 13 are used to achieve electrical connection between the coils.

[0044] In this embodiment, the second coupling coil 5 and the third coupling coil 6 are arranged in an alternating pattern. For example, the fourth coil 51, the fifth coil 52, and the sixth coil 53 of the second coupling coil 5 are arranged in an alternating pattern, and the seventh coil 61, the eighth coil 62, and the ninth coil 63 of the third coupling coil 6 are arranged in an alternating pattern. This makes it convenient to install and arrange the second coupling coil 5 and the third coupling coil 6, and ensures good matching effect of the differential matching structure 100.

[0045] In this embodiment, the spacing between the second coupling coil 5 and the third coupling coil 6 is 1.5µm-4.5µm. Optionally, the spacing between the second coupling coil 5 and the third coupling coil 6 is 3µm, which provides a suitable arrangement and good matching effect.

[0046] In this embodiment, the first metal layer 1, the second metal layer 2, and the third metal layer 3 are all made of nickel-gold alloy. The application of nickel-gold alloy in inductor metal layers mainly relies on its excellent conductivity, corrosion resistance, and solderability, especially in high-frequency inductors, miniaturized inductors, and high-reliability applications.

[0047] In this embodiment, the thickness of the first metal layer 1 is 0.5um-1.5um, the thickness of the second metal layer 2 is 2um-3um, and the thickness of the third metal layer 3 is 2um-3um. Optionally, the thickness of the first metal layer 1 is 1um, the thickness of the second metal layer 2 is 2um, and the thickness of the third metal layer 3 is 2um.

[0048] In this embodiment, the differential matching structure 100 further includes a wafer layer 7 and a first isolation layer 8. The wafer layer 7 is located on the side of the first metal layer 1 away from the second metal layer 2, and the first isolation layer 8 is disposed between the wafer layer 7 and the first metal layer 1. The wafer layer 7 serves as a substrate support, and the first isolation layer 8 isolates the wafer layer 7 from the first metal layer 1, preventing contact and conduction between them, thus providing good protection. The wafer layer 7 is made of GaAs (gallium arsenide) material and has a thickness of 75 μm. The first isolation layer 8 is made of SiN (silicon nitride) material and has a thickness of 0.155 μm.

[0049] In this embodiment, the differential matching structure 100 further includes a first intermediate dielectric layer 9 and a second intermediate dielectric layer 10. The first intermediate dielectric layer 9 is disposed between the first metal layer 1 and the second metal layer 2, and the second intermediate dielectric layer 10 is disposed between the second metal layer 2 and the third metal layer 3. The second intermediate dielectric layer 10 is made of polyimide material and has a thickness of 2.73 μm.

[0050] In this embodiment, the first intermediate dielectric layer 9 includes a second isolation layer 91, a first dielectric layer 92, and a second dielectric layer 93 stacked sequentially. The side of the second isolation layer 91 away from the second metal layer 2 is fixed to the first metal layer 1, and the side of the second dielectric layer 93 close to the second metal layer 2 is fixed to the second metal layer 2. The second isolation layer 91 is made of SiN material, the first dielectric layer 92 is made of SiN material, and the second dielectric layer 93 is made of polyimide material. The thicknesses of the second isolation layer 91, the first dielectric layer 92, and the second dielectric layer 93 are 0.065 μm, 0.13 μm, and 1.53 μm, respectively.

[0051] In this embodiment, the differential matching structure 100 further includes a fourth metal via 14, which penetrates the second dielectric layer 93. The second metal layer 2 and the first dielectric layer 92 are connected through the fourth metal via 14. Connecting the second metal layer 2 and the first dielectric layer 92 through the fourth metal via 14, the first dielectric layer 92 serves as the upper electrode metal of capacitor C1, the first metal layer 1 serves as the lower electrode metal of capacitor C1, and the first dielectric layer 92 surrounding the fourth metal via 14 serves as the intermediate dielectric of capacitor C1.

[0052] In this embodiment, the differential matching structure 100 is shown in the simulation diagram. For example... Figures 7-9 As shown, the S21 insertion loss in the 5.1GHz-7.12GHz band is 2.4dB~3.1dB, the input return loss is -11dB~-30dB and the output return loss is less than -9.9dB~-30dB, indicating good bandwidth matching.

[0053] It should be noted that the various embodiments described above with reference to the accompanying drawings are merely illustrative of the present invention and not intended to limit its scope. Those skilled in the art should understand that modifications or equivalent substitutions made to the present invention without departing from its spirit and scope should be included within the scope of the present invention. Furthermore, unless the context otherwise requires, words appearing in the singular include those in the plural, and vice versa. Additionally, unless specifically stated otherwise, all or part of any embodiment may be used in conjunction with all or part of any other embodiment.

Claims

1. A differential matching structure, characterized in that, The differential matching structure includes a first metal layer, a second metal layer, and a third metal layer stacked sequentially and insulated from each other, and a capacitor. A first coupling coil is integrated on the second metal layer, and a second coupling coil and a third coupling coil are integrated on the first metal layer. The second coupling coil and the third coupling coil are located on the same side of the first metal layer, facing each other and spaced apart. The third metal layer is used for grounding. A first end of the first coupling coil is used to receive a radio frequency signal, and a second end of the first coupling coil is connected to the capacitor and then grounded. The first end of the second coupling coil is connected to the first end of the third coupling coil and is connected to the third metal layer together. The second end of the second coupling coil is used to output a radio frequency signal, and the second end of the third coupling coil is used to output a radio frequency signal. The first coupling coil is coupled to the second coupling coil and the third coupling coil, respectively; The first coupling coil includes a first coil, a second coil, and a third coil respectively disposed on the same surface of the second metal layer; the first coil and the third coil are disposed opposite each other, and the second coil is disposed between the first coil and the third coil and spaced apart from each other; the first end of the first coil serves as the first end of the first coupling coil, the second end of the first coil is connected to the first end of the second coil, the second end of the second coil is connected to the first end of the third coil, and the second end of the third coil serves as the second end of the first coupling coil; The second coupling coil includes a fourth coil, a fifth coil, and a sixth coil, respectively disposed on the same surface of the first metal layer; the fourth coil, the fifth coil, and the sixth coil are spaced apart from each other, the fourth coil and the fifth coil are respectively wrapped around opposite sides of the first coil and spaced apart from each other, and the sixth coil is wrapped around the inner side of the second coil and spaced apart from each other; the first end of the fourth coil serves as the first end of the second coupling coil, and the second end of the fourth coil serves as the second end of the second coupling coil; the fourth coil, the fifth coil, and the sixth coil are connected in parallel through the first metal layer; The third coupling coil includes a seventh coil, an eighth coil, and a ninth coil, respectively disposed on the same surface of the first metal layer; the seventh coil, the eighth coil, and the ninth coil are spaced apart from each other, the seventh coil and the eighth coil are respectively wrapped around opposite sides of the third coil and spaced apart from each other, and the ninth coil is wrapped around the inner side of the third coil and spaced apart from each other; the first end of the seventh coil serves as the first end of the third coupling coil, and the second end of the seventh coil serves as the second end of the third coupling coil; the seventh coil, the eighth coil, and the ninth coil are connected in parallel through the first metal layer; the seventh coil, the eighth coil, and the ninth coil are respectively positioned opposite the fourth coil, the fifth coil, and the sixth coil.

2. The differential matching structure according to claim 1, characterized in that, The first coil, the second coil, and the third coil are connected in series through a first metal via; the fourth coil, the fifth coil, and the sixth coil are connected in parallel through a second metal via; the seventh coil, the eighth coil, and the ninth coil are connected in parallel through a third metal via; the first metal via is formed in the second metal layer, and the second metal via and the third metal via are formed in the first metal layer.

3. The differential matching structure according to claim 1, characterized in that, The second coupling coil and the third coupling coil are arranged in an alternating pattern.

4. The differential matching structure according to claim 3, characterized in that, The distance between the second coupling coil and the third coupling coil is 1.5um-4.5um.

5. The differential matching structure according to claim 1, characterized in that, The first metal layer, the second metal layer, and the third metal layer are all made of nickel-gold alloy.

6. The differential matching structure according to claim 5, characterized in that, The thickness of the first metal layer is 0.5um-1.5um, the thickness of the second metal layer is 2um-3um, and the thickness of the third metal layer is 2um-3um.

7. The differential matching structure according to claim 1, characterized in that, The differential matching structure further includes a wafer layer and a first isolation layer. The wafer layer is located on the side of the first metal layer away from the second metal layer, and the first isolation layer is disposed between the wafer layer and the first metal layer.

8. The differential matching structure according to claim 1, characterized in that, The differential matching structure further includes a first intermediate dielectric layer and a second intermediate dielectric layer, wherein the first intermediate dielectric layer is disposed between the first metal layer and the second metal layer, and the second intermediate dielectric layer is disposed between the second metal layer and the third metal layer.

9. The differential matching structure according to claim 8, characterized in that, The first intermediate dielectric layer includes a second isolation layer, a first dielectric layer, and a second dielectric layer stacked sequentially; the side of the second isolation layer away from the second metal layer is fixed to the first metal layer, and the side of the second dielectric layer close to the second metal layer is fixed to the second metal layer.

10. The differential matching structure according to claim 9, characterized in that, The differential matching structure further includes a fourth metal via, which is formed through the second dielectric layer, and the second metal layer and the first dielectric layer are connected through the fourth metal via.

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