Method, system for processing cross-layer holes on ceramic substrate and ceramic circuit board
By combining laser processing and mechanical drilling on ceramic substrates, the problems of drill bit breakage and excessive taper in cross-layer hole processing of ceramic substrates have been solved, achieving high-quality cross-layer hole structure processing and good conductivity.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHENZHEN DAZU MICROELECTRONICS TECHNOLOGY CO LTD
- Filing Date
- 2026-02-11
- Publication Date
- 2026-06-26
AI Technical Summary
In traditional methods, the machining of cross-layer holes in ceramic substrates suffers from drill bit breakage and excessive taper, resulting in poor conductivity.
A combined approach of laser processing and mechanical drilling is adopted on ceramic substrates. The processing area and sequence are divided in the depth direction according to the structural information. Laser processing is performed first, followed by mechanical drilling, which avoids drill bit breakage and reduces taper.
It improves the machining quality and conductivity of cross-layer holes, avoids drill bit breakage, reduces taper, and improves machining efficiency and accuracy.
Smart Images
Figure CN121728685B_ABST
Abstract
Description
Technical Field
[0001] This application belongs to the field of industrial technology, and in particular relates to a method, system and ceramic circuit board for processing interlayer holes on a ceramic substrate. Background Technology
[0002] A circuit board (PCB) is a packaging substrate used to carry and interconnect different chips and / or electronic components. A PCB consists of a core board and stacked layers on top and bottom surfaces. The copper foil layers in the stacked layers are used to create the signal transmission lines of the PCB, while the insulating layers provide insulation between the upper and lower signal transmission lines. Ceramic substrates, on the other hand, are PCBs containing ceramic material layers within their material layers. They possess excellent heat dissipation performance, high insulation, and good mechanical strength, making them a crucial foundation for supporting high-performance computing hardware, efficient heat dissipation systems, and high-end electronic devices. Through-hole structures are microporous structures that penetrate multiple copper foil layers, used to form interconnected conductive structures across multiple copper foil layers.
[0003] In traditional circuit board manufacturing methods, mechanical drilling is used to process interlayer hole structures. However, due to the high hardness, thickness, and brittleness of the ceramic material layer itself, the drill bit is prone to breakage during mechanical drilling, making it impossible to complete the processing normally. To address this, existing technologies use laser processing to process interlayer hole structures. However, the resulting interlayer holes have excessive taper, resulting in poor actual conductivity. Summary of the Invention
[0004] This application provides a method for processing interlayer holes on a ceramic substrate, a system for processing interlayer holes on a ceramic substrate, and a ceramic circuit board, which can improve the processing quality of interlayer holes and thus improve the conductivity.
[0005] The first aspect of this application provides a method for processing a cross-layer hole on a ceramic substrate, comprising: acquiring structural information of the ceramic substrate; planning a processing sequence and area for laser processing and mechanical drilling in the depth direction based on the structural information; wherein the processing depth range of the ceramic substrate is divided into a laser processing area and a mechanical drilling area, the laser processing area including a ceramic material layer on the ceramic substrate and a copper layer stacked on either side of the ceramic material layer; and performing laser processing operations on the laser processing area and mechanical drilling operations on the mechanical drilling area according to the processing sequence and area, so as to form at least one cross-layer hole structure on the ceramic substrate.
[0006] In some embodiments of the first aspect, the cross-layer hole structure is a through hole penetrating the ceramic substrate; according to the processing sequence and region, performing laser processing operation on the laser processing region and mechanical drilling operation on the mechanical drilling region includes: according to the processing sequence and region, processing at least one set of first blind holes and second blind holes on the first surface and the second surface of the ceramic substrate respectively, and using the first blind hole or the second blind hole in each set as the target blind hole, processing is performed from the bottom of the target blind hole to remove the material layer between the first blind hole and the second blind hole in the same set to form a through hole, wherein the first blind hole and the second blind hole in the same set are aligned in the depth direction.
[0007] In some embodiments of the first aspect, at least one set of first blind holes and second blind holes are respectively processed on a first surface and a second surface of a ceramic substrate, including: after forming a first blind hole on the first surface of the ceramic substrate, flipping the ceramic substrate; determining a processing position aligned with the first blind hole on the second surface of the ceramic substrate according to the position information of the first blind hole, and forming a second blind hole according to the processing position aligned with the first blind hole.
[0008] In some embodiments of the first aspect, at least one set of first blind holes and second blind holes are respectively processed on a first surface and a second surface of a ceramic substrate, with the first blind hole or the second blind hole in each set as a target blind hole. Processing is performed from the bottom of the target blind hole to remove the material layer between the first blind hole and the second blind hole in the same set, including: after forming the first blind hole on the first surface, processing is performed from the bottom of the first blind hole to remove the material layer between the first blind hole and the second blind hole in the same set; after removing the material layer between the first blind hole and the second blind hole in the same set, the second blind hole is formed on the second surface.
[0009] In some embodiments of the first aspect, processing is performed from the bottom of the target blind hole to remove the material layer between the two blind holes to form a through hole, including: locating the target blind hole and obtaining the coordinates of the bottom of the target blind hole; and processing is performed from the bottom of the target blind hole according to the coordinates to remove the material layer between the first blind hole and the second blind hole in the same group.
[0010] In some embodiments of the first aspect, the processing sequence of laser processing and mechanical drilling in the depth direction is planned according to structural information, including: identifying the position of the ceramic material layer in the ceramic substrate according to the structural information; if the ceramic material layer is located in the internal core region of the ceramic substrate, the processing sequence is: mechanically drilling the first blind hole and the second blind hole, and using laser processing to process from the bottom of the target blind hole to penetrate the ceramic material layer; if the ceramic material layer is located in the surface region of the ceramic substrate, the processing sequence is: laser processing the first blind hole and the second blind hole, and using mechanical drilling to process from the bottom of the target blind hole to penetrate the non-ceramic material layer between the first blind hole and the second blind hole.
[0011] In some embodiments of the first aspect, mechanical drilling is used to process the first blind hole and the second blind hole, including: controlling the depth of mechanical drilling so that a material layer of a predetermined thickness is retained between the bottom of the first blind hole and the surface of the ceramic material layer in the internal core region as a transition zone, the transition zone being the laser processing area.
[0012] In some embodiments of the first aspect, the pore diameter of the translayer pore structure is from 100 μm to 400 μm.
[0013] In some embodiments of the first aspect, the laser beam used in the laser processing operation is an ultrashort pulse laser.
[0014] In some embodiments of the first aspect, after forming at least one of the trans-layer hole structures, the method further includes: performing at least one post-treatment on the trans-layer hole structure, such as cleaning, hole metallization, or filling with a conductive material, to form a conductive path in the trans-layer hole structure.
[0015] A second aspect of this application provides a controller, including a memory, a processor, and a computer program stored in the memory and executable on the processor; when the processor executes the computer program, it implements the steps of the above-described method for processing interlayer holes on a ceramic substrate.
[0016] A third aspect of this application provides a computer-readable storage medium storing a computer program that, when executed by a processor, implements the steps of the above-described method for processing interlayer holes on a ceramic substrate.
[0017] The fourth aspect of this application provides a computer program product that, when run, causes the above-described method for processing interlayer holes on a ceramic substrate to be executed.
[0018] A fifth aspect of this application provides a system for processing interlayer holes on a ceramic substrate, comprising: an optical processing head for guiding and focusing a laser beam generated by a laser onto a laser processing area of the ceramic substrate; a mechanical drilling unit including a spindle and a drill bit disposed on the spindle for mechanically drilling the mechanical drilling area of the ceramic substrate; and a controller for acquiring structural information of the ceramic substrate and, based on the structural information, planning the processing sequence and area of laser processing and mechanical drilling in the depth direction; wherein the processing depth range of the ceramic substrate is divided into a laser processing area and a mechanical drilling area, the laser processing area including a ceramic material layer on the ceramic substrate and a copper layer stacked on either side of the ceramic material layer; the controller is further configured to: control the optical processing head to perform laser processing operations on the laser processing area according to the processing sequence and area, and control the mechanical drilling unit to perform mechanical drilling operations on the mechanical drilling area, so as to form at least one interlayer hole structure on the ceramic substrate.
[0019] The sixth aspect of this application provides a ceramic circuit board, comprising: a ceramic substrate formed by stacking ceramic material layers and non-ceramic material layers; and a cross-layer hole structure obtained by processing the ceramic substrate according to the method described in any one of the first aspects or the cross-layer hole processing system based on any one of the fifth aspects.
[0020] In the embodiments of this application, by obtaining the structural information of the ceramic substrate, the processing sequence and area of laser processing and mechanical drilling in the depth direction are planned according to the structural information. According to the processing sequence and area, laser processing operation is performed on the laser processing area and mechanical drilling operation is performed on the mechanical drilling area to form at least one cross-layer hole structure on the ceramic substrate. The processing depth range of the ceramic substrate is divided into a laser processing area and a mechanical drilling area. The laser processing area includes a ceramic material layer on the ceramic substrate and a copper layer stacked on either side of the ceramic material layer. Laser processing on the ceramic material layer can avoid the drill bit breakage problem of mechanical drilling. At the same time, mechanical drilling is introduced in at least part of the non-ceramic material layer. Compared with using laser processing throughout the process, the taper of the cross-layer hole structure can be reduced, the processing quality of the cross-layer hole can be improved, and the conductivity effect can be improved. Attached Figure Description
[0021] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0022] Figure 1This is a schematic diagram illustrating the implementation process of a method for processing interlayer holes on a ceramic substrate according to an embodiment of this application.
[0023] Figure 2 This is a schematic diagram of the processing of blind holes provided in an embodiment of this application.
[0024] Figure 3 This is a schematic diagram illustrating the specific implementation process of determining the processing order provided in the embodiments of this application.
[0025] Figure 4 This is a first schematic diagram of the machining of through holes provided in an embodiment of this application.
[0026] Figure 5 This is a second schematic diagram of the machining of through holes provided in an embodiment of this application.
[0027] Figure 6 This is a schematic diagram of multi-layered laser processing provided in the embodiments of this application.
[0028] Figure 7 This is a schematic diagram of the laser scanning path provided in an embodiment of this application.
[0029] Figure 8 This is a schematic diagram of the structure of a controller provided in an embodiment of this application.
[0030] Figure 9 This is a schematic diagram of the specific structure of the processing system for interlayer holes on a ceramic substrate provided in the embodiments of this application. Detailed Implementation
[0031] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are protected by this application.
[0032] It should be understood that, when used in this application specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or a collection thereof.
[0033] It should also be understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.
[0034] References to "one embodiment" or "some embodiments" in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized.
[0035] In traditional circuit board manufacturing methods, mechanical drilling is used to process interlayer hole structures. However, due to the high hardness, thickness, and brittleness of the ceramic material layer itself, the drill bit is prone to breakage during mechanical drilling, making it impossible to complete the processing normally. To address this, existing technologies use laser processing to process interlayer hole structures. However, the resulting interlayer holes have excessive taper, resulting in poor actual conductivity.
[0036] In view of this, this application avoids the problem of drill bit breakage in mechanical drilling by performing laser processing on the ceramic material layer. At the same time, mechanical drilling is introduced in some non-ceramic material layers. Compared with using laser processing throughout the process, the taper of the cross-layer hole structure can be reduced, the processing quality of the cross-layer hole can be improved, and thus the conductivity can be improved.
[0037] To illustrate the technical solution of this application, specific embodiments are described below.
[0038] Figure 1 This illustration shows a schematic flowchart of a method for processing interlayer holes on a ceramic substrate according to an embodiment of this application. This method can be applied to a controller. The controller can be installed on a system for processing interlayer holes on a ceramic substrate.
[0039] Specifically, the method for processing the interlayer hole on the ceramic substrate may include the following steps S101 to S103.
[0040] Step S101: Obtain the structural information of the ceramic substrate.
[0041] The structural information of the ceramic substrate can be used to describe the properties and distribution of each material layer inside the ceramic substrate, and may include the material type, thickness and location of each material layer.
[0042] Step S102: Based on the structural information, plan the processing sequence and area of laser processing and mechanical drilling in the depth direction.
[0043] In the embodiments of this application, based on the structural information of the ceramic substrate, the distribution position of the ceramic material layer in the depth direction can be determined, and then based on the distribution position of the ceramic material layer, the processing sequence and area of laser processing and mechanical drilling in the depth direction can be planned.
[0044] The processing depth range of the ceramic substrate can be determined based on the morphology of the trans-layer hole structure. For example, when the trans-layer hole structure is a through hole, the processing depth range is the entire depth range of the ceramic substrate; when the trans-layer hole structure is a blind hole, the processing depth range is a portion of the entire depth range of the ceramic substrate.
[0045] The processing depth range of the ceramic substrate is divided into a laser processing area and a mechanical drilling area. The laser processing area includes the ceramic material layer on the ceramic substrate and a copper layer stacked on either side of the ceramic material layer. The mechanical drilling area does not include the ceramic material layer; for example, the portion other than the ceramic material layer and the copper layer stacked on either side of the ceramic material layer can be considered the mechanical drilling area. In other words, laser processing can be used to process the ceramic material layer and the copper foil layer stacked on either side, while mechanical drilling can be used to process at least a portion of the non-ceramic material layers. Based on the positions of the laser processing area and the mechanical drilling area on the ceramic substrate, a processing sequence in the depth direction can be formed.
[0046] It should be noted that the ceramic substrate may include a core board and add-on structures. The core board may specifically include an insulating layer at the center of the ceramic circuit board (this insulating layer may be the aforementioned ceramic material layer or an insulating layer made of a non-ceramic material) and copper foil layers stacked on both sides of the insulating layer. In some embodiments, a polymer material layer may also be disposed between the copper foil layer and the insulating layer of the core board to improve ductility. Add-on structures may be stacked on both sides of the core board, each side of the add-on structure including a signal layer and an insulating layer. This application does not limit the number, thickness, position, or order of the layers within the ceramic substrate. For example, the thickness of the ceramic material layer serving as the core board is 800 μm, or greater than or equal to 1000 μm; the thickness of the ceramic material layer near the surface of the ceramic substrate is 400 μm; and the thickness of the ceramic material layer near the core board is 200 μm. When the ceramic material layer is the core board, the laser processing area may specifically include a ceramic material layer, a copper layer connected to the ceramic material layer, and a polymer material layer.
[0047] Step S103: According to the processing sequence and area, perform laser processing operation on the laser processing area and mechanical drilling operation on the mechanical drilling area to form at least one cross-layer hole structure on the ceramic substrate.
[0048] Specifically, depending on the processing sequence and area, laser processing is performed on the laser-processed area and mechanical drilling is performed on the mechanically drilled area. This allows the ceramic material layer within the processing depth range to be removed by laser processing, while the remaining portion outside the laser-processed area within the processing depth range is removed by mechanical drilling, forming a cross-layer hole structure spanning multiple material layers. This cross-layer hole structure can be a through hole or a blind hole, and this application does not impose any restrictions on it.
[0049] In the embodiments of this application, by obtaining the structural information of the ceramic substrate, the processing sequence and area of laser processing and mechanical drilling in the depth direction are planned according to the structural information. According to the processing sequence and area, laser processing operation is performed on the laser processing area and mechanical drilling operation is performed on the mechanical drilling area to form at least one cross-layer hole structure on the ceramic substrate. The processing depth range of the ceramic substrate is divided into a laser processing area and a mechanical drilling area. The laser processing area includes a ceramic material layer on the ceramic substrate and a copper layer stacked on either side of the ceramic material layer. Laser processing on the ceramic material layer can avoid the drill bit breakage problem of mechanical drilling. At the same time, mechanical drilling is introduced in some non-ceramic material layers. Compared with using laser processing throughout the process, the taper of the cross-layer hole structure can be reduced, the processing quality of the cross-layer hole can be improved, and the conductivity effect can be improved.
[0050] In some embodiments of this application, if the cross-layer hole structure is a blind hole, the processing sequence and area of laser processing and mechanical drilling are planned in the depth direction based on the structural information, including: determining the distribution position of the ceramic material layer based on the structural information, and determining the laser processing area and the mechanical drilling area based on the distribution position of the ceramic material layer. The processing sequence is determined according to the arrangement of the laser processing area and the mechanical drilling area from the plane where the blind hole opening is located to the bottom of the blind hole.
[0051] For example, please refer to Figure 2 The ceramic material layer is located on the insulating layer near the plane where the blind hole opening is located. Based on the distribution of the ceramic material layer, the laser processing area and the mechanical drilling area shown in the figure are determined. Since the laser processing area and the mechanical drilling area are sequentially located from the plane where the blind hole opening is located to the bottom of the hole, the processing sequence can be determined as follows: laser processing is performed first, followed by mechanical drilling.
[0052] Understandably, if the cross-layer hole structure is a blind hole, it needs to be machined using a single-sided machining method. If the cross-layer hole structure is a through hole, it can be machined using either single-sided or double-sided machining.
[0053] When machining through holes on one side, similar to blind holes, the distribution of the ceramic material layer can be determined based on structural information. The laser machining area and the mechanical drilling area are then determined based on the distribution of the ceramic material layer. The machining sequence is determined according to the arrangement of the laser machining area and the mechanical drilling area from the machining start face to the machining end face.
[0054] However, both laser processing and mechanical drilling have limited effective processing capabilities (such as the laser's depth of focus and the drill bit's chip removal ability) in the depth direction. When the total thickness to be penetrated is large, laser processing from one side to the bottom in one pass will cause the beam to diverge at depth, resulting in a decrease in energy density and a sharp reduction in the exit diameter, forming a tapered hole. On the other hand, mechanical drilling from one side to the bottom in one pass will result in a drill bit with an excessively large length-to-diameter ratio, which is prone to vibration and deviation, leading to rough hole walls, poor positional accuracy, and easy tool breakage.
[0055] To address the aforementioned issues, when the cross-layer hole structure is a through-hole penetrating the ceramic substrate, laser processing operations are performed on the laser processing area and mechanical drilling operations are performed on the mechanical drilling area according to the processing sequence and region. This can include: processing at least one set of first blind holes and second blind holes on the first and second surfaces of the ceramic substrate, respectively, according to the processing sequence and region, and using the first or second blind hole in each set as the target blind hole, processing is performed from the bottom of the target blind hole to penetrate the material layer between the first and second blind holes in the same set, thereby forming a through-hole.
[0056] The first and second surfaces are the upper and lower surfaces of the ceramic substrate along the depth direction. Specifically, based on the structural information, the distribution position of the ceramic material layers can be determined, and the laser processing area and mechanical drilling area can be determined based on the distribution position of the ceramic material layers, thereby determining the processing sequence.
[0057] For example, if both the area closest to the first surface and the area closest to the second surface are mechanically drilled areas, the processing sequence can be: first perform mechanical drilling (processing the first blind hole and the second blind hole respectively), and then perform laser processing (the material layer between the two blind holes).
[0058] For example, if the area closest to the first surface is the laser processing area and the remaining areas are the mechanical drilling areas, the processing sequence can be: first perform laser processing (process the first blind hole), then perform mechanical drilling (process the second blind hole and the material layer between the two blind holes).
[0059] When there are multiple first blind holes and multiple second blind holes, each first blind hole corresponds one-to-one with each second blind hole, forming multiple sets of first blind holes and second blind holes. Among them, the first blind holes and second blind holes in the same set are aligned in the depth direction so that the material layer between the first blind holes and the second blind holes in the same set can be penetrated, so that the direction of the formed through hole is in the depth direction.
[0060] It should be noted that, in some embodiments of this application, after the processing of the first blind hole and the second blind hole is completed, one of the blind holes can be used as the target blind hole, and the material layer between the first blind hole and the second blind hole in the same group can be removed.
[0061] In other embodiments of this application, at least one set of first blind holes and second blind holes are respectively processed on the first and second surfaces of a ceramic substrate, with the first or second blind hole in each set serving as the target blind hole. Processing is performed from the bottom of the target blind hole to remove the material layer between the first and second blind holes in the same set. This may include: after forming the first blind hole on the first surface, processing is performed from the bottom of the first blind hole to remove the material layer between the first and second blind holes in the same set; after removing the material layer between the first and second blind holes in the same set, the second blind hole is formed on the second surface. That is, the first blind hole is processed first and the material layer between the first and second blind holes is removed, and then the second blind hole is processed.
[0062] For details, please refer to Figure 3 Based on the structural information, the processing sequence of laser processing and mechanical drilling in the depth direction can be planned, which may include steps S301 to S303.
[0063] Step S301: Identify the position of the ceramic material layer in the ceramic substrate based on the structural information.
[0064] Specifically, by utilizing the material type, thickness, and location of each material layer, it can be determined whether the ceramic material layer is located in the internal core region or the surface region of the ceramic substrate. The internal core region can refer to the core board, which is the substrate that constitutes the main structure of the circuit board and provides the primary mechanical support. The surface region can refer to the added insulating layers, which are insulating dielectric materials added layer by layer on top of the existing core board or inner layer circuitry through methods such as lamination or coating to stack more circuit layers vertically.
[0065] Step S302: If the ceramic material layer is located in the core area inside the ceramic substrate, the processing sequence is as follows: mechanical drilling is used to process the first blind hole and the second blind hole, and laser processing is used to process from the bottom of the target blind hole to penetrate the ceramic material layer.
[0066] The target blind hole can be either the first blind hole or the second blind hole.
[0067] Please refer to Figure 4 If the ceramic material layer is located in the core area inside the ceramic substrate (such as the core board), then the ceramic material layer is located at the center of the ceramic substrate. In this case, mechanical drilling can be used to process the first and second blind holes, retaining the ceramic material layer located at the center. Then, laser processing can be used to process from the bottom of the target blind hole to penetrate the ceramic material layer, thus obtaining a through hole.
[0068] In some embodiments of this application, the diameter of the first blind hole and the second blind hole can be greater than a preset threshold, for example, the diameter of the first blind hole and the second blind hole is 100μm to 400μm.
[0069] In some embodiments of this application, please refer to Figure 4 The machining of the first and second blind holes using mechanical drilling may include: controlling the depth of the mechanical drilling to maintain a material layer of predetermined thickness between the bottom of the first and second blind holes and the surface of the ceramic material layer in the internal core region as a transition zone. This transition zone is a material layer of predetermined thickness maintained on the surface of the ceramic material layer along the depth direction; this transition zone is the laser processing area.
[0070] In other words, the bottom of both the first and second blind holes must have a certain depth relative to the surface of the ceramic material layer to prevent the mechanical drill bit from contacting the ceramic material layer and reduce the risk of tool breakage.
[0071] Step S303: If the ceramic material layer is located in the surface area of the ceramic substrate, the processing sequence is as follows: use laser processing to process the first blind hole and the second blind hole, and use mechanical drilling to process from the bottom of the target blind hole to penetrate the non-ceramic material layer between the first blind hole and the second blind hole.
[0072] Please refer to Figure 5 If the ceramic material layer is located in the surface area of the ceramic substrate, it means that the ceramic material layer is located near the first or second surface of the ceramic substrate. In this case, laser processing can be used to process the first and second blind holes, remove the ceramic material layers located on both sides of the center, and then mechanical drilling can be used to process from the bottom of the target blind hole to penetrate the non-ceramic material layer located in the center to obtain a through hole.
[0073] The processing methods in steps S302 and S303 can avoid using laser processing throughout the entire process, reduce the energy accumulation of the ceramic substrate during laser processing, and reduce the problem of uneven hole walls caused by the large difference in thermal stress of each material. Using mechanical drilling to process non-ceramic material layers can also improve processing efficiency and avoid the taper defects that exist in laser processing.
[0074] In some embodiments of this application, a first blind hole and a second blind hole are respectively processed on a first surface and a second surface of a ceramic substrate. This may include: performing multiple layered laser processing based on the processing depth of the first blind hole and the second blind hole until the first blind hole and the second blind hole reach the processing depth of the first blind hole and the second blind hole are formed.
[0075] Specifically, such as Figure 6 As shown, laser processing can be performed layer by layer from either the first or second surface, allowing the bottom of the blind hole to gradually deepen with each laser pass until the target depth is reached. This transforms the original method of laterally expanding the opening to form the hole structure into a method of longitudinally removing layers to increase the opening depth, significantly reducing the thermal impact on the material layer beneath the ceramic layer. It should be noted that... Figure 6The diagram uses exaggerated illustrations to show the taper of the layered processing, without limiting the actual processing effect.
[0076] In some embodiments of this application, please refer to Figure 7 The processing of each layer includes: processing according to a laser scanning path, which can be a parallel line scanning path or a grid line scanning path. The parallel line scanning path or grid line scanning path ensures coverage of each layer.
[0077] In some embodiments of this application, at least one set of first blind holes and second blind holes are processed on the first surface and the second surface of the ceramic substrate, respectively. This may include: after forming the first blind hole on the first surface of the ceramic substrate, flipping the ceramic substrate; determining a processing position aligned with the first blind hole on the second surface of the ceramic substrate according to the position information of the first blind hole, and forming the second blind hole according to the processing position aligned with the first blind hole.
[0078] Specifically, the position information of the first blind hole on the first surface can be located by visual scanning or mechanical positioning, thereby calculating the processing position on the second surface that is aligned with the first blind hole. The second blind hole is then processed based on the processing position aligned with the first blind hole, so that the first blind hole and the second blind hole in the same group are aligned.
[0079] In some embodiments of this application, processing is performed from the bottom of the target blind hole to remove the material layer between the first and second blind holes in the same group, forming a through hole. This may include: locating the target blind hole and obtaining the coordinates of the bottom of the target blind hole; and processing is performed from the bottom of the target blind hole according to the coordinates to remove the material layer between the first and second blind holes in the same group.
[0080] Similarly, the target blind hole can be located using visual scanning or mechanical positioning to obtain the coordinates of its bottom. With the first and second blind holes in the same group aligned, machining can begin precisely from the bottom of the blind hole, connecting it to another blind hole to form a through hole, based on the coordinates of its bottom.
[0081] In some embodiments of this application, after forming at least one interlayer via structure, the process may further include: performing at least one post-treatment on the interlayer via structure, such as cleaning, via metallization, or filling with a conductive material, to form a conductive path in the interlayer via structure. Via metallization may refer to electroplating. The conductive path may connect to a multilayer circuit structure within the ceramic substrate.
[0082] In some embodiments of this application, the laser beam used in the laser processing operation is an ultrashort pulse laser.
[0083] It should be noted that, for the sake of simplicity, the aforementioned method embodiments are described as a series of actions. However, those skilled in the art should understand that this application is not limited to the described order of actions, because based on this application, some steps can be performed in other orders.
[0084] like Figure 8 The diagram shown is a schematic of a controller provided in an embodiment of this application. Specifically, the controller 40 may include: a processor 400, a memory 401, and a computer program 402 stored in the memory 401 and executable on the processor 400, such as a process for fabricating multi-layer holes on a ceramic substrate. When the processor 400 executes the computer program 402, it implements the steps in the above-described embodiments of the methods for fabricating multi-layer holes on ceramic substrates, for example... Figure 1 Steps S101 to S103 are shown.
[0085] The computer program can be divided into one or more modules / units, which are stored in the memory 401 and executed by the processor 400 to complete this application. The one or more modules / units can be a series of computer program instruction segments capable of performing a specific function, which describe the execution process of the computer program in the controller.
[0086] The controller may include, but is not limited to, a processor 400 and a memory 401. Those skilled in the art will understand that... Figure 8 This is merely an example of a controller and does not constitute a limitation on the controller. It may include more or fewer components than illustrated, or combine certain components, or different components. For example, the controller may also include input / output devices, network access devices, buses, etc.
[0087] The processor 400 may be a Central Processing Unit (CPU), or other general-purpose processors, digital signal processors (DSPs), application-specific integrated circuits (ASICs), off-the-shelf programmable gate arrays or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or any conventional processor.
[0088] The memory 401 can be an internal storage unit of the controller, such as the controller's hard drive or memory. The memory 401 can also be an external storage device of the controller, such as a plug-in hard drive, Smart Media Card (SMC), Secure Digital (SD) card, or FlashCard. Furthermore, the memory 401 can include both internal and external storage units of the controller. The memory 401 is used to store the computer program and other programs and data required by the controller. The memory 401 can also be used to temporarily store data that has been output or will be output.
[0089] It should be noted that, for the sake of convenience and brevity, the structure of the controller described above can also be referred to the specific description of the structure in the method embodiment, which will not be repeated here.
[0090] In the embodiments of this application, the controller may be a loading / unloading robot or a control device connected to the loading / unloading robot.
[0091] Specifically, Figure 9 This application illustrates a system for processing interlayer holes on a ceramic substrate, comprising:
[0092] Laser 10 is used to emit a laser beam;
[0093] Optical processing head 20 is used to guide and focus the laser beam generated by the laser onto the laser processing area of the ceramic substrate;
[0094] The mechanical drilling unit 30 includes a spindle and a drill bit mounted on the spindle, and is used to mechanically drill the mechanical drilling area of the ceramic substrate.
[0095] The controller 40 is used to acquire structural information of the ceramic substrate; and to plan the processing sequence and area of laser processing and mechanical drilling in the depth direction according to the structural information; wherein the processing depth range of the ceramic substrate is divided into a laser processing area and a mechanical drilling area, the laser processing area including a ceramic material layer on the ceramic substrate and a copper layer stacked on either side of the ceramic material layer; the controller is also used to: control the optical processing head to perform laser processing operation on the laser processing area according to the processing sequence and area, and control the mechanical drilling unit to perform mechanical drilling operation on the mechanical drilling area, so as to form at least one cross-layer hole structure on the ceramic substrate.
[0096] In some embodiments of this application, the laser 10 can be an ultrashort pulse laser (e.g., including nanosecond lasers, picosecond lasers, femtosecond lasers, etc.), which emits an ultrashort pulse laser beam to realize the above-mentioned multi-layer hole structure processing method. The aforementioned first laser and second laser can be emitted by the same laser 10. The laser 10 that can provide suitable laser pulse wavelength and pulse frequency parameters can be selected according to processing requirements. The power, spot size, pulse number, and other parameters of the laser beam emitted by the laser 10 can all be set according to processing requirements. Preferably, the laser 10 is an ultrafast laser that generates ultrafast lasers (including picosecond lasers, femtosecond lasers, etc.).
[0097] It is understandable that lasers emitting ultrashort pulse laser beams include ultrafast lasers and nanosecond lasers. Ultrafast lasers emit laser beams with pulse widths on the order of picoseconds, while nanosecond lasers emit laser beams with pulse widths on the order of nanoseconds. For ceramic material layers, the extremely short pulse durations of ultrafast and nanosecond lasers enable them to possess high peak power and wide spectral bandwidth, concentrating laser energy within a very small temporal and spatial range. This induces multiphoton absorption and / or avalanche ionization at the processing location of the translayer hole structure, breaking the molecular chains of the material, causing it to vaporize, and forming smaller particles, thus achieving rapid material removal. Furthermore, the interaction between ultrashort pulse lasers and the substrate is primarily a cold working process, which can further reduce the thermal impact on the surrounding structure during processing, facilitating the acquisition of better processed cross-sectional morphology. Furthermore, the cross-layer hole structure needs to penetrate both a multi-layered ceramic material layer and a copper foil layer. The ultrashort pulse laser can directly act on the copper foil layer without the need for additional browning or blackening pretreatment of the copper, thus enabling the processing of cross-layer hole structures that continuously penetrate multiple layers of continuously stacked ceramic material.
[0098] A beam control system may be provided between the laser 10 and the optical processing head 20. The beam control system can be used to control and transmit the laser beam, and may include, but is not limited to, a galvanometer and an acousto-optic polarizer.
[0099] In some embodiments of this application, the processing system for cross-layer holes on a ceramic substrate may further include a vision system for locating the first blind hole and the second blind hole.
[0100] In some embodiments of this application, the processing system for cross-layer holes on a ceramic substrate further includes a processing platform for supporting the ceramic substrate.
[0101] This application embodiment also provides a ceramic circuit board, the ceramic substrate of which may include:
[0102] A ceramic substrate is formed by stacking layers of ceramic material and non-ceramic material.
[0103] Trans-layer hole structure, the trans-layer hole structure is based on Figure 1 The described method for fabricating cross-layer holes on ceramic substrates or as follows Figure 9 The aforementioned system for processing cross-layer holes on ceramic substrates is used to process ceramic substrates.
[0104] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the above-described division of functional units and modules is merely an example. In practical applications, the above functions can be assigned to different functional units and modules as needed, that is, the internal structure of the device can be divided into different functional units or modules to complete all or part of the functions described above. The functional units and modules in the embodiments can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit. Furthermore, the specific names of the functional units and modules are only for easy differentiation and are not intended to limit the scope of protection of this application. The specific working process of the units and modules in the above system can be referred to the corresponding process in the foregoing method embodiments, and will not be repeated here.
[0105] In the above embodiments, the descriptions of each embodiment have different focuses. For parts that are not described in detail or recorded in a certain embodiment, please refer to the relevant descriptions of other embodiments.
[0106] Those skilled in the art will recognize that the units and algorithm steps of the various examples described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are implemented in hardware or software depends on the specific application and design constraints of the technical solution. Those skilled in the art can use different methods to implement the described functions for various specific applications, but such implementations should not be considered beyond the scope of this application.
[0107] In the embodiments provided in this application, it should be understood that the disclosed devices / controllers / systems and methods can be implemented in other ways. For example, the device / controller / system embodiments described above are merely illustrative. For instance, the division of modules or units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some interfaces; the indirect coupling or communication connection between devices or units may be electrical, mechanical, or other forms.
[0108] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected based on actual needs to achieve the purpose of this embodiment.
[0109] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.
[0110] If the integrated module / unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, all or part of the processes in the methods of the above embodiments can also be implemented by a computer program instructing related hardware. The computer program can be stored in a computer-readable storage medium, and when executed by a processor, it can implement the steps of the various method embodiments described above. The computer program includes computer program code, which can be in the form of source code, object code, executable files, or certain intermediate forms. The computer-readable medium can include: any entity or device capable of carrying the computer program code, recording media, USB flash drives, portable hard drives, magnetic disks, optical disks, computer memory, read-only memory (ROM), random access memory (RAM), electrical carrier signals, telecommunication signals, and software distribution media, etc. It should be noted that the content included in the computer-readable medium can be appropriately added or removed based on the requirements of legislation and patent practice in the jurisdiction. For example, in some jurisdictions, based on legislation and patent practice, computer-readable media do not include electrical carrier signals and telecommunication signals.
[0111] The above-described embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.
Claims
1. A method for processing interlayer holes on a ceramic substrate, characterized in that, include: Obtain structural information of the ceramic substrate; Based on the structural information, the processing sequence and area of laser processing and mechanical drilling are planned in the depth direction; wherein, the processing depth range of the ceramic substrate is divided into a laser processing area and a mechanical drilling area, and the laser processing area includes a ceramic material layer on the ceramic substrate and a copper layer stacked on either side of the ceramic material layer. According to the processing sequence and area, laser processing operations are performed on the laser processing area and mechanical drilling operations are performed on the mechanical drilling area to form at least one cross-layer hole structure on the ceramic substrate; the laser beam used in the laser processing operation is an ultrashort pulse laser; Wherein, when the cross-layer hole structure is a through hole penetrating the ceramic substrate, according to the processing sequence and region, laser processing operation is performed on the laser processing area and mechanical drilling operation is performed on the mechanical drilling area, including: according to the processing sequence and region, at least one set of first blind holes and second blind holes are respectively processed on the first surface and the second surface of the ceramic substrate, wherein the processing position of the second blind hole is obtained by positioning the first blind hole; taking the first blind hole or the second blind hole in each set as the target blind hole, processing is performed from the bottom of the target blind hole to remove the material layer between the first blind hole and the second blind hole in the same set, forming the through hole, wherein the first blind hole and the second blind hole in the same set are aligned in the depth direction.
2. The method for processing interlayer holes on a ceramic substrate as described in claim 1, characterized in that, The process of machining at least one set of first blind holes and second blind holes on the first and second surfaces of the ceramic substrate includes: After forming a first blind hole on the first surface of the ceramic substrate, the ceramic substrate is flipped over. Based on the position information of the first blind hole, a processing position aligned with the first blind hole is determined on the second surface of the ceramic substrate, and a second blind hole is formed based on the processing position aligned with the first blind hole.
3. The method for processing interlayer holes on a ceramic substrate as described in claim 1, characterized in that, The process involves machining at least one set of first blind holes and second blind holes on the first and second surfaces of the ceramic substrate, respectively, and using either the first or second blind hole in each set as a target blind hole. Machining is then performed from the bottom of the target blind hole to remove the material layer between the first and second blind holes in the same set, including: After forming the first blind hole on the first surface, the material layer between the first blind hole and the second blind hole in the same group is removed by processing from the bottom of the first blind hole. After removing the material layer between the first and second blind holes in the same group, a second blind hole is formed on the second surface.
4. The method for processing interlayer holes on a ceramic substrate as described in claim 1, characterized in that, Processing is performed from the bottom of the target blind hole to remove the material layer between the first and second blind holes in the same group, forming the through hole, including: The target blind hole is located, and the coordinates of the bottom of the target blind hole are obtained; Based on the coordinates, machining begins from the bottom of the target blind hole to remove the material layer between the first and second blind holes in the same group.
5. The method for processing interlayer holes on a ceramic substrate as described in claim 1, characterized in that, The step of planning the processing sequence of laser processing and mechanical drilling in the depth direction based on the structural information includes: The position of the ceramic material layer in the ceramic substrate is identified based on the structural information; If the ceramic material layer is located in the internal core region of the ceramic substrate, the processing sequence is as follows: mechanical drilling is used to process the first blind hole and the second blind hole, and laser processing is used to process from the bottom of the target blind hole to penetrate the ceramic material layer; If the ceramic material layer is located in the surface area of the ceramic substrate, the processing sequence is as follows: the first blind hole and the second blind hole are processed by laser processing, and the non-ceramic material layer between the first blind hole and the second blind hole is processed by mechanical drilling from the bottom of the blind hole of the target blind hole.
6. The method for processing interlayer holes on a ceramic substrate as described in claim 5, characterized in that, The machining of the first blind hole and the second blind hole by mechanical drilling includes: The depth of mechanical drilling is controlled so that a material layer of a predetermined thickness is retained between the bottom of the first and second blind holes and the surface of the ceramic material layer in the internal core region as a transition zone, which is the laser processing area.
7. The method for processing interlayer holes on a ceramic substrate as described in any one of claims 1-6, characterized in that, The diameter of the pores in the multilayer pore structure is between 100 μm and 400 μm.
8. The method for processing interlayer holes on a ceramic substrate as described in any one of claims 1-6, characterized in that, After forming at least one of the said interlayer hole structures, the method further includes: The trans-layer hole structure is subjected to at least one of the following post-treatments: cleaning, hole metallization, or filling with a conductive material, to form a conductive path in the trans-layer hole structure.
9. A processing system for interlayer holes on a ceramic substrate, characterized in that, include: A laser for emitting a laser beam, wherein the laser beam is an ultrashort pulse laser; An optical processing head is used to guide and focus the laser beam generated by the laser onto the laser processing area of the ceramic substrate; A mechanical drilling unit includes a spindle and a drill bit mounted on the spindle, used for mechanically drilling the mechanical drilling area of the ceramic substrate; A controller is used to acquire structural information of a ceramic substrate; based on the structural information, to plan the processing sequence and area of laser processing and mechanical drilling in the depth direction; wherein, the processing depth range of the ceramic substrate is divided into a laser processing area and a mechanical drilling area, and the laser processing area includes a ceramic material layer on the ceramic substrate and a copper layer stacked on either side of the ceramic material layer. The controller is also configured to: control the optical processing head to perform laser processing operations on the laser processing area according to the processing sequence and area, and control the mechanical drilling unit to perform mechanical drilling operations on the mechanical drilling area to form at least one cross-layer hole structure on the ceramic substrate; Wherein, when the cross-layer hole structure is a through hole penetrating the ceramic substrate, according to the processing sequence and region, laser processing operation is performed on the laser processing area and mechanical drilling operation is performed on the mechanical drilling area, including: according to the processing sequence and region, at least one set of first blind holes and second blind holes are respectively processed on the first surface and the second surface of the ceramic substrate, wherein the processing position of the second blind hole is obtained by positioning the first blind hole; taking the first blind hole or the second blind hole in each set as the target blind hole, processing is performed from the bottom of the target blind hole to remove the material layer between the first blind hole and the second blind hole in the same set, forming the through hole, wherein the first blind hole and the second blind hole in the same set are aligned in the depth direction.
10. A ceramic circuit board, characterized in that, include: A ceramic substrate is formed by stacking layers of ceramic material and non-ceramic material. A cross-layer hole structure, wherein the cross-layer hole structure is obtained by processing the ceramic substrate according to the cross-layer hole processing method on the ceramic substrate according to any one of claims 1 to 8 or the cross-layer hole processing system on the ceramic substrate according to claim 9.