Sealing system for low-temperature reaction chamber

Abstract

A reaction chamber may include a susceptor configured to support a substrate disposed in a reaction chamber volume, an upper chamber space above the susceptor, a lower chamber space below the susceptor, and / or a sealing system. The sealing system may at least partially fluidly separate the upper chamber space and the lower chamber space. The sealing system may include a spacer plate surrounding the base and / or a sealing member attached to the base. The sealing system may be configured to form an at least partial vacuum seal between the spacer plate and the sealing member and cause at least partial fluid separation between the upper chamber space and the lower chamber space.

Description

TECHNICAL FIELD

[0001] The present disclosure relates generally to semiconductor processing or reactor systems. In particular, the present disclosure relates to reactor systems and components included therein that allow for sealing between an upper volume and a lower volume within a reaction chamber. BACKGROUND

[0002] Reaction chambers can be used for various processes during the formation of electronic devices on semiconductor substrates. For example, reaction chambers can be used to deposit various material layers onto semiconductor substrates, etch materials, and / or clean surfaces.

[0003] Reaction chambers can include two spaces or volumes separated, for example, by a pedestal. The two spaces can include an upper chamber space above the pedestal and / or a lower chamber space below the pedestal. The lower chamber space can be disposed vertically below the upper chamber space, and the upper chamber space can be disposed vertically above the pedestal. Processing operations of one or more substrates can occur in the upper reaction space, and during the operations, contaminants can undesirably transfer from one chamber space to the other. For example, contaminants can undesirably transfer from the upper chamber space to the lower chamber space. Further, if the lower chamber space is sealed off from the upper chamber space, the total volume of the space in which processing operations of substrates occur can be reduced, and thus, a lesser amount of materials can be used during the formation of electronic devices on substrates. Accordingly, systems and methods for providing a seal between the two spaces within a reaction chamber, for example, to at least partially fluidly separate the two chambers, can be desirable. SUMMARY

[0004] This Summary is provided to introduce a selection of concepts in a simplified form. These concepts are further described in detail in the following detailed description of example embodiments of the disclosure. This Summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0005] The reactor systems disclosed herein can facilitate at least partial sealing between two spaces, chambers, or volumes within a reaction chamber of the reactor system. In various embodiments, the reactor system can include a reaction chamber, where one of the two spaces within the reaction chamber can be in fluid communication with the other space. The reaction chamber can include a pedestal configured to: support a substrate disposed in the reaction chamber; and translate upwardly and downwardly within the reaction chamber; an upper chamber space within the reaction chamber and above the pedestal; a lower chamber space within the reaction chamber and below the pedestal; and a sealing system. The sealing system can include: a sealing member attached to the pedestal; and a spacer plate surrounding the pedestal. The sealing system can be configured to form an at least partial vacuum seal between the spacer plate and the sealing member, and to cause at least partial fluid separation between the upper chamber space and the lower chamber space.

[0006] In some embodiments, the sealing system may be configured to form a partial vacuum seal between the upper-facing surface of the sealing member and the lower-facing surface of the spacer plate.

[0007] In some embodiments, the sealing member may include an elastic material and may be configured to expand when a partial vacuum seal is formed between the spacer plate and the sealing member.

[0008] In some embodiments, the spacer plate may include a first raised portion, a second raised portion, and a recessed portion between the first and second raised portions. The sealing system may be configured to create a partial vacuum seal between the spacer plate and the sealing member by forming a vacuum process in the space formed by the sidewalls of the first and second raised portions, the recessed portion, and the upper-facing surface of the sealing member. In some embodiments, one of the first or second raised portions may include a width of 5 to 30 mm. In some embodiments, the recessed portion of the spacer plate may include a width of 5 to 30 mm.

[0009] In some embodiments, the sealing system may further include one or more bits disposed on a first surface of the recessed portion. The bits may be configured to prevent the upper-facing surface of the sealing member from contacting the first surface of the recessed portion.

[0010] In some embodiments, the reaction chamber may be configured to process the substrate at a temperature of less than 200°C.

[0011] In some embodiments, the sealing system may further include a vacuum source coupled to the spacer plate. The sealing system may be configured to form a partial vacuum seal between the spacer plate and the sealing member by translating the base upward within the reaction chamber, causing the upper-facing surface of the sealing member to contact the lower-facing surface of the spacer plate, and activating the vacuum source to form a partial vacuum seal between the spacer plate and the sealing member.

[0012] In some embodiments, the sealing system may also be configured to create a partial vacuum seal between the spacer plate and the sealing member by increasing the pressure in the lower chamber space.

[0013] In some embodiments, the sealing system can also be configured to release a partial vacuum seal between the spacer plate and the sealing member by disabling the vacuum source and translating the base downward within the reaction chamber.

[0014] In some embodiments, the spacer plate may comprise metal or a metal alloy (e.g., aluminum). In some embodiments, the sealing member may comprise an elastic material (e.g., a Kalrez® brand product or a Viton™ brand product).

[0015] In various embodiments, a method may include: translating a base in a reaction chamber upward from a first position to a second position; based on the translation, contacting an upper-facing surface of a sealing member with a lower-facing surface of a spacer plate in the reaction chamber, wherein the sealing member is coupled to the base and the spacer plate surrounds the base; activating a vacuum source coupled to the spacer plate to form at least a partial vacuum seal between the lower-facing surface of the spacer plate and the upper-facing surface of the sealing member, and inducing at least a partial fluid separation between an upper chamber space and a lower chamber space in the reaction chamber, wherein the upper chamber space is above the base and the lower chamber space is below the base; and maintaining the partial vacuum seal between the spacer plate and the sealing member during substrate processing in the upper chamber space.

[0016] In some embodiments, the method may further include increasing the pressure in the lower chamber space.

[0017] In some embodiments, the method may further include the following steps: after processing the substrate, deactivating the vacuum source to release a portion of the vacuum seal, and translating the base downward from the second position to the third position.

[0018] For the purpose of outlining this disclosure and its advantages relative to prior art implementations, certain objects and advantages of this disclosure have been described above. It should be understood, of course, that not all such objects or advantages may be achieved according to any particular embodiment of this disclosure. Therefore, for example, those skilled in the art will recognize that the embodiments disclosed herein may be performed in a manner that achieves or optimizes one or more advantages taught or suggested herein, without necessarily achieving other objects or advantages that may be taught or suggested herein.

[0019] All these embodiments are intended to fall within the scope of this disclosure. These and other embodiments will become apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, and this disclosure is not limited to any particular embodiment discussed. Attached Figure Description

[0020] Although this specification concludes with claims that are specifically pointed out and clearly claimed as embodiments of this disclosure, the advantages of embodiments of this disclosure can be more readily determined from the description of certain examples of embodiments when read in conjunction with the accompanying drawings. Elements having the same element numbers in all the drawings are intended to be identical.

[0021] Figure 1 This is a schematic diagram of an exemplary reactor system according to various embodiments.

[0022] Figure 2A This is a schematic diagram of an exemplary reaction chamber having a base positioned at a lower location, according to various embodiments.

[0023] Figure 2B This is a schematic diagram of an exemplary reaction chamber having a base positioned in an elevated position, according to various embodiments.

[0024] Figure 3A and Figure 3B Exemplary spacer plates for providing a seal in a reaction chamber are shown according to various embodiments.

[0025] Figure 4 Methods for maintaining a seal within a reaction chamber are illustrated according to various embodiments.

[0026] Figure 5 , Figure 6 , Figure 7 , Figure 8 and Figure 9 A schematic diagram of a portion of a reaction chamber according to various embodiments is shown.

[0027] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the embodiments illustrated in this disclosure. Detailed Implementation

[0028] Although certain embodiments and examples are disclosed below, those skilled in the art will understand that the invention extends beyond the specific disclosed embodiments and / or uses of the invention and their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited to the specific disclosed embodiments described below.

[0029] The illustrations presented herein are not intended to be actual views of any particular material, device, structure, or equipment, but are merely representations for illustrating embodiments of this disclosure.

[0030] As used herein, the term “substrate” can refer to any one or more underlying materials, including any one or more underlying materials that can be modified or on which devices, circuits or films can be formed.

[0031] As used herein, the term "atomic layer deposition" (ALD) can refer to a vapor-phase deposition process in which deposition cycles, preferably multiple consecutive cycles, are performed in a processing chamber. Typically, during each cycle, a precursor is chemisorbed onto the deposition surface (e.g., a substrate surface or a previously deposited lower layer surface, such as material from a previous ALD cycle), forming a monolayer or sub-monolayer that is not readily reactive with other precursors (e.g., a self-limiting reaction). Subsequently, if desired, a reactant (e.g., another precursor or a reactive gas) can be introduced into the processing chamber to convert the chemisorbed precursor into the desired material on the deposition surface. Typically, this reactant is capable of further reacting with the precursor. Furthermore, a purging step can be utilized during each cycle to remove excess precursor from the processing chamber and / or excess reactant and / or reaction byproducts after the conversion of the chemisorbed precursor. Furthermore, as used herein, the term “atomic layer deposition” also means processes specified by related terms such as “chemical vapor deposition,” “atomic layer epitaxy” (ALE), molecular beam epitaxy (MBE), gas source MBE or organometallic MBE, and chemical beam epitaxy when performed with alternating pulses of precursor composition, reactive gas, and purge gas (e.g., inert carrier gas).

[0032] As used herein, the term “chemical vapor deposition” can refer to any process in which a substrate is exposed to one or more volatile precursors that react and / or decompose on the substrate surface to produce the desired deposition.

[0033] As used herein, the terms “membrane” and “thin film” can refer to any continuous or discontinuous structure and material deposited by the methods disclosed herein. For example, “membrane” and “thin film” can include 2D materials, nanorods, nanotubes, or nanoparticles, or even partial or complete molecular layers, partial or complete atomic layers, or atomic and / or molecular clusters. “Membrane” and “thin film” can include materials or layers with pinholes, but still at least partially continuous.

[0034] As used herein, the term "contaminant" can refer to any unwanted material disposed within the reaction chamber that can affect the purity of the substrate disposed within the reaction chamber. The term "contaminant" can refer to, but is not limited to, unwanted deposits, metallic and non-metallic particles, impurities, and waste disposed within the reactor system or reaction chamber or any part thereof.

[0035] Reactor systems for ALD, CVD, etc., can be used in a variety of applications, including depositing and etching materials on substrate surfaces. In various embodiments, references are made to... Figure 1The reactor system 50 may include a reaction chamber 4, a base 6 for holding a substrate 30 during processing, a fluid distribution system 8 (e.g., a spray nozzle) for dispensing one or more reactants onto the surface of the substrate 30, and one or more reactant sources 10, 12 and / or carrier gas and / or purge gas sources 14, which are fluidly coupled to the reaction chamber 4 via lines 16, 18 and 20 and / or valves or controllers 22, 24 and 26. The reactor system 50 may also include a vacuum source / pump 28 fluidly coupled to the reaction chamber 4. One or more sealing systems 29 may separate (e.g., at least partially fluidly separate) portions of the volume within the reaction chamber 4.

[0036] at the same time Figure 1 The sealing system 29 is illustrated in a vertical furnace (e.g., reactor system 50) housing a single substrate (e.g., substrate 30) that is substantially horizontally oriented. The sealing system described herein can also be implemented in vertical batch furnaces housing multiple substrates, diffusion furnaces, horizontal furnaces with wafers vertically oriented, and / or other furnaces for processing semiconductor substrates.

[0037] Go to Figure 2A and Figure 2B Embodiments of this disclosure may include reactor systems and methods that can be used to process substrates within reactor 100. In various embodiments, reactor 100 may include a reaction chamber 110 for processing substrates. In various embodiments, reaction chamber 110 may include an upper chamber space 112 (which may be configured to process one or more substrates) and / or a lower chamber space 114. Lower chamber space 114 may be configured to load and unload substrates from and / or to provide a pressure differential between lower chamber space 114 and upper chamber space 112.

[0038] In various embodiments, substrate 150 and base 130 may be movable relative to each other. For example, in various embodiments, lifting pin 139 may be configured to allow substrate 150 to separate from base 130 and / or allow substrate 150 to be positioned in contact with (i.e. supported by) base 130. In various embodiments, base 130 may be moved up or down, for example via base lift 104, such that substrate 150 moves together with base 130. In various embodiments, lifting pin 139 may be moved up or down, for example via lifting pin lift / platform 202. In various embodiments, one of base 130 and lifting pin 139 may be stationary while the other is movable.

[0039] In various embodiments, the base 130 can be moved from the loading position 103 to the processing position 106, such as... Figure 2BAs shown, the substrate 150 is thus moved into the upper chamber space 112. The substrate 150 can then be processed within the upper chamber space 112. Fluids (e.g., precursors, reactant gases, carrier gases, etc.) can flow into the upper chamber space 112 through a fluid distribution system 180 (e.g., a spray nozzle) to contact the substrate 150. The volume of the upper chamber space 112 within the reaction chamber 110 can be surrounded at least by the fluid distribution system 180, the base 130, the spacer plate 160, and / or the sealing member 170.

[0040] A sealing member 170 may be disposed around the base 130. The sealing member 170 may be annular and / or attached to the base 130. The sealing member 170 may have an inner periphery whose diameter is larger than the diameter of the substrate support region on the base 130. The base 130 may have an annular lip on its top surface outside the substrate support region, and the sealing member 170 may be disposed on the top surface outside the lip. Alternatively, the base 130 may not have an annular lip on its top surface outside the substrate support region, and the sealing member 170 may be disposed on the top surface outside the substrate support region.

[0041] The base 130 may include a top plate (not shown) and a heating block (not shown), with the top plate resting on the heating block. A sealing member 170 may be annular and located between the top plate and the heating block. The sealing member 170 may be attached to a side of the heating block. The sealing member 170 may have an annular portion and an annular peripheral portion extending from the base 130. The annular portion may be attached to a side of the heating block. The annular peripheral portion may include a surface facing upwards 171 and a surface facing downwards 172.

[0042] When the base 130 is raised or lowered within the reaction chamber, the sealing member 170 can move together with the base. When the base 130 is raised to the processing position 106, the upward-facing surface of the sealing member 170 can contact the spacer plate 160.

[0043] The sealing member 170 may be made of an elastic material, such as a heat-resistant elastic material, like silicone; a perfluoroelastomer (e.g., perfluorinated rubber (FFKM)), such as a Kalrez® brand product; or a fluoropolymer (e.g., fluororubber), such as a Viton™ brand product. For example, the maximum operating temperature of a Viton™ brand product may be 230°C, while the maximum operating temperature of a Kalrez® brand product may be 330°C. In various embodiments, the reactor 100 may be configured to process the substrate below 200°C, therefore the sealing member 170 may include a Viton™ brand product or a Kalrez® brand product. In other embodiments, the reactor 100 may be configured to process the substrate below 300°C, therefore the sealing member 170 may include a Kalrez® brand product.

[0044] In various embodiments, reactor 100 may include a spacer plate 160, at least a portion of which may project from a chamber sidewall into the reaction chamber. The spacer plate 160 may be positioned below the fluid distribution system 180. In various embodiments, the spacer plate 160 may surround a base in the reaction chamber 110. The spacer plate 160 may engage with a sealing member 170 when the base 130 is moved into or positioned in a processing position (e.g., an elevated position). For example, the downward-facing surface of the spacer plate 160 may engage and / or contact the upward-facing surface of the sealing member 170.

[0045] Figure 3A A top view of the lower surface of an example spacer plate 300 (e.g., spacer plate 160) is shown, while Figure 3B A cross-sectional view of the spacer plate 300 is shown. The spacer plate 300 may include an opening 302 that allows fluid from the fluid distribution system 180 to enter the upper chamber space 112. The spacer plate 300 may also include an outer protrusion 304, an inner protrusion 306, and / or a recess 308. In various embodiments, the outer protrusion 304 may have a first perimeter C1, the recess 308 may have a second perimeter C2, and the inner protrusion 306 may have a third perimeter C3. The second perimeter C2 may be less than the first perimeter C1 and greater than the third perimeter C3. The first perimeter C1 may be greater than both the second and third perimeters C2 and C3. The height of the outer protrusion 304 and / or the inner protrusion 306 may be greater than the height of the recess 308. The width “a” of the outer protrusion 304 and / or the inner protrusion 306 may be in the range of 10 to 30 nanometers. The outer protrusion 304 and / or the inner protrusion may include a smooth surface 320 that can contact the sealing member 170. Furthermore, the width "b" of the recessed portion may be in the range of 10-20 nanometers. The spacer plate 300 may include materials such as quartz, ceramic, or metals (e.g., titanium, aluminum, stainless steel, or Hastelloy).

[0046] In various embodiments, the surface 310 of the recessed portion 308 may include one or more drill bits 312. The drill bits 312 may have a cylindrical shape, a cuboid shape, a hexagonal prism shape, a triangular prism shape, etc. The width of the drill bit 312 may be 1-2 nm, and the height of the drill bit may be 2-10 nm. The drill bits 312 may be configured to prevent the upper-facing surface 171 of the sealing member 170 from contacting the lower-facing surface 172 of the recessed portion 308. Additionally, the drill bits 312 may be configured to generate a uniform vacuum between the upper-facing surface 171 of the sealing member 170 and the spacer plate 300. The recessed portion 308 may also include an inlet 322 connected to a vacuum source (e.g., vacuum source 190) and / or an inert gas source (e.g., inert gas source 196).

[0047] Return to reference Figure 2A andFigure 2B In various embodiments, the spacer plate 160 and the sealing member 170 can be configured to control fluid flow within the reaction chamber. The upper chamber space 112 and the lower chamber space 114 can be separated or isolated (fluidly and / or physically) by the sealing member 170 and / or the spacer plate 160. For example, when the base 130 is in the processing position 106, the sealing member 170 attached to the base 130 can be coupled to, contact, and / or engage protrusions of the spacer plate 160 (e.g., outer protrusion 304 and inner protrusion 306). In various configurations, the pressure within the lower chamber space 114 can be increased such that the increased pressure pushes the sealing member 170 upward, causing the upper-facing surface 171 of the sealing member 170 to contact the protrusions of the spacer plate 160. The lower chamber space 114 can be coupled to a vacuum source 198 (e.g., a vacuum pump). When vacuum source 198 is activated, it can provide vacuum pressure, causing gas to flow from vacuum source 198 to lower chamber space 114, thereby increasing the internal pressure within lower chamber space 114. When vacuum source 198 is deactivated, it can cause gas to flow from lower chamber space 114 to vacuum source 198.

[0048] Sealing member 170 and / or spacer plate 160 can fluidly separate upper chamber space 112 and lower chamber space 114 by creating at least a partial vacuum seal between a portion of sealing member 170 and a portion of spacer plate 160. For example, a partial vacuum seal can be formed in space 195, which is surrounded by the sidewalls of a protruding portion of spacer plate 160, a recessed portion of spacer plate (e.g., recessed portion 308), and a portion of sealing member 170 between the protruding portions of spacer plate 160. The portion of sealing member 170 between the protruding portions of spacer plate 160 is deformable and extends toward the recessed portion of spacer plate 160. Spacer plate 160 can be coupled (e.g., via inlet 322) to vacuum source 190 (e.g., a vacuum pump) and / or inert gas source 196. Vacuum source 190, when activated, can provide vacuum pressure, causing gas to flow from space 195 to vacuum source 190, thereby creating a vacuum seal in space 195. When vacuum source 190 is deactivated, gas can flow from space 195 to vacuum source 190, thereby releasing the vacuum seal formed in space 195. Furthermore, after vacuum source 190 is deactivated, inert gas source 196 can be activated to allow one or more inert gases (e.g., N2, Ar, He, etc.) to flow from inert gas source 196 to space 195, releasing the vacuum seal formed in space 195. The inlet 322 of the recessed region 308 of the spacer plate can provide a channel for gas flow between space 195 and vacuum source 196. Controller 192 can control the formation and / or release of the vacuum seal within space 195 by controlling the activation and / or deactivation of vacuum source 190 and inert gas source 196.

[0049] A partial vacuum seal between the upper chamber space 112 and the lower chamber space 114 may be desirable to prevent or reduce the entry and / or contact of precursor gases and / or other fluids used in the processing of the substrate 150 into and / or with the lower chamber space 114 of the reaction chamber 110. For example, precursor gases used to process the substrate in the reaction space may include corrosive deposition precursors that can contact the lower chamber space 114, generating unwanted deposits / contaminants / particles that can then be reintroduced into the upper chamber space 112, thereby providing a source of contamination to the substrate disposed in the reaction space. A partial vacuum seal between the upper chamber space 112 and the lower chamber space 114 may also limit the area where plasma is generated. Various other embodiments, including those described herein, may also prevent plasma from contacting the sides of the pedestal (e.g., heating blocks), the inner walls of the reactor 100, and other locations where conductive components are exposed, thus resulting in a lower floating potential applied to the processing target. As a result, charging damage and pick-up problems caused by plasma can be reduced.

[0050] In various embodiments, to create a vacuum seal between the upper chamber space 112 and the lower chamber space 114, the reaction chamber 110 may include a sealing system disposed between the base 130, the chamber sidewalls of the reaction chamber, and / or the fluid distribution system 180. For example, the sealing system in the reaction chamber 110 may include a sealing member 170 attached to the base 130, a spacer plate 160, a vacuum source 190 for creating at least a partial vacuum seal between the upper chamber space 112 and the lower chamber space 114, an inert gas source 196 for releasing the partial vacuum seal, and / or a controller 192.

[0051] During operation, refer to Figure 4 In the method 400 shown, in step 402, a substrate (e.g., substrate 150) may be provided in a reaction chamber (e.g., reaction chamber 110 of reactor 100). When providing the substrate, a base supporting the substrate may be in a first position (e.g., a lower position or a loading position). For example, Figure 5A base 504 (e.g., base 130) is shown, wherein the upper surface of the base 504 may be in a first position 508 (e.g., a lower position or a loaded position). A sealing member 506 (e.g., sealing member 170) may be attached to the base 504, and when the base 504 is in the first position 508, the upper surface 514 of the sealing member 506 does not contact the protrusions 516 and 518 (e.g., outer protrusion 304 and inner protrusion 306) of the spacer plate 502. The spacer plate 502 may also include a recessed portion 520 (e.g., recessed portion 308) between the protrusions 516 and 518, and the recessed portion 520 may be coupled to a vacuum source 522 (e.g., vacuum source 190) and / or an inert gas source 530. When the upper surface of the base 504 is in the first position 508, fluid can flow freely between the upper chamber space 510 (e.g., upper chamber space 112) and the lower chamber space 512 (e.g., lower chamber space 114). Therefore, the sealing member 506 can be in a relaxed state (e.g., without deformation or expansion).

[0052] Return to reference Figure 4 In step 404, the base can be translated upward from a first position (e.g., a lower position or a loading position) to a second position (e.g., a raised position or a processing position) such that in step 406, the sealing member attached to the base can contact the portions of the spacer plate. For example, as Figure 6 As shown, the base 504 can be translated upwards, such that the upper-facing surface of the base 504 is in an elevated or processed position 602. The processed position of the base 504 can be the position where the base 504 is positioned during substrate processing (e.g., at a desired distance from the top of the reaction chamber or the fluid distribution system). During translation, the upper-facing surface 514 of the sealing member 506 can engage, contact, and / or connect with the protrusions 516 and 518 of the spacer plate 502. The contact between the upper-facing surface 514 of the sealing member 506 and the protrusions 516 and 518 of the spacer plate 502 creates a space 604. The space 604 can be surrounded or enclosed by the sidewalls of the protrusions 516 and 518, the upper-facing surface 514 of the sealing member 506, and / or the lower-facing surface of the recess 520. The vacuum source 522 can be deactivated, and therefore, the sealing member 506 can remain in a relaxed position (e.g., without deformation or expansion).

[0053] exist Figure 4 Step 408 can increase the pressure in the lower chamber of the reactor chamber. For example, as... Figure 7As shown, the increased pressure 702 can push the annular peripheral portion of the sealing member 506 upward, allowing the upper-facing surface 514 of the sealing member 506 to contact the protrusions 516 and 518 of the spacer plate 502. The lower chamber space 512 can be connected to a vacuum source (e.g., vacuum source 198), which, when activated, can provide vacuum pressure, causing gas to flow from the vacuum source into the lower chamber space 512, thereby increasing the internal pressure within the lower chamber space 512.

[0054] exist Figure 4 Step 410, by activating a vacuum source connected to the reaction chamber, can create a vacuum seal between the upper and lower chamber spaces of the reaction chamber. For example, as... Figure 8 As shown, vacuum source 522 can be activated, and a vacuum process can be performed in space 604. The vacuum process may include flowing gas from space 604 to vacuum source 522, thereby forming a vacuum seal in space 604. Sealing member 506 may include an elastic material, and the formation of a vacuum within space 604 may cause the elastic material of a portion 802 of sealing member 170 to deform and extend toward a recessed portion 520 of spacer plate 502. The extended portion 802 may contact one or two drill bits disposed on the downward-facing surface of the recessed portion 520. The drill bits may prevent direct contact between the extended portion 802 and the downward-facing surface of the recessed portion 520. Vacuum source 522 can be activated when it receives an activation signal from a controller (e.g., controller 192).

[0055] In response to a vacuum seal formed in space 604, at least a partial vacuum seal can be formed between spacer plate 502 and sealing member 506, and upper chamber space 510 can be isolated from lower chamber space 512. Therefore, upper chamber space 510 can be at least partially fluidly isolated from lower chamber space 512.

[0056] exist Figure 4 In step 412, when the substrate of step 402 is processed within the upper chamber space 510, a vacuum seal can be maintained (e.g., a vacuum seal formed in space 604). The vacuum seal can be maintained by keeping the vacuum source open.

[0057] exist Figure 4 In step 414, the vacuum source can be deactivated to release the vacuum seal. Alternatively, an inert gas source can be activated. For example, such as... Figure 9As shown, vacuum source 522 can be deactivated and inert gas source 530 can be activated. Inert gas source 530 allows gas to flow from inert gas source 530 to space 604, thereby releasing the vacuum seal in space 604. For example, one or more inert gases (such as molecular nitrogen, helium, argon, or other inert gases) can be pumped into space 604. The elastic material of extension 802 can return to its relaxed state. Gas recently pumped into space 604 helps extension 802 return to its relaxed state. Vacuum source 522 can be deactivated when a deactivation signal is received from a controller (e.g., controller 192).

[0058] exist Figure 4 In step 416, the base 504 may be translated downward from the raised position (e.g., raised position 602) to a lower position (e.g., first position 508 or another lower position). The downward translation of the base allows fluid to flow freely again between the upper chamber space 510 and the lower chamber space 512.

[0059] While exemplary embodiments of this disclosure are set forth herein, it should be understood that this disclosure is not limited thereto. For example, although reactor systems are described in conjunction with various specific configurations, this disclosure is not necessarily limited to these examples. Various modifications, variations, and enhancements may be made to the systems and methods set forth herein without departing from the spirit and scope of this disclosure.

[0060] The illustrations presented herein are not intended to be actual views of any particular material, structure, or device, but are merely idealized representations used to describe embodiments of this disclosure.

[0061] The specific embodiments shown and described are illustrative of the invention and its best mode, and are not intended to limit the scope of aspects and embodiments in any way. In fact, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the system may not be described in detail. Furthermore, the connecting lines shown in the figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in the actual system, and / or may not exist in some embodiments.

[0062] It should be understood that the configurations and / or methods described herein are exemplary in nature, and these specific embodiments or examples should not be considered limiting, as many variations are possible. The particular routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various actions shown may be performed in the order shown, in a different order, or in some cases omitted.

[0063] The subject matter of this disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes, systems and configurations disclosed herein, as well as any and all equivalents thereof.

Claims

1. A reaction chamber, comprising: The base is configured as follows: A substrate is supported within the reaction chamber; and It moves upward and downward within the reaction chamber; The upper chamber space is located within the reaction chamber and above the base; The lower chamber space is located within the reaction chamber and below the base; as well as A sealing system, comprising: Sealing components attached to the base; and Spacer plates surrounding the base, The sealing system is configured to form at least a partial vacuum seal between the spacer plate and the sealing member, and to cause at least a partial fluid separation between the upper chamber space and the lower chamber space.

2. The reaction chamber according to claim 1, wherein, The sealing system is configured to form a partial vacuum seal between the spacer plate and the sealing member by forming the partial vacuum seal between the upper-facing surface of the sealing member and the lower-facing surface of the spacer plate.

3. The reaction chamber according to claim 1, wherein, The sealing member comprises an elastic material; and The sealing member is configured to expand when a partial vacuum seal is formed between the spacer plate and the sealing member.

4. The reaction chamber according to claim 1, wherein, The spacer plate includes: The first protruding part; The second protrusion; and The recessed portion between the first protruding portion and the second protruding portion, The sealing system is configured to form a partial vacuum seal between the spacer plate and the sealing member by performing a vacuum process in the space formed by the sidewalls of the first and second protrusions, the recessed portion, and the upper-facing surface of the sealing member.

5. The reaction chamber according to claim 4, wherein, One of the first protrusion or the second protrusion includes a width of 5 to 30 millimeters.

6. The reaction chamber according to claim 4, wherein, The recessed portion has a width of 5 to 30 millimeters.

7. The reaction chamber according to claim 4, wherein, The sealing system also includes: One or more drill bits are disposed on the recessed portion and configured to prevent the upper-facing surface of the sealing member from contacting the surface of the recessed portion.

8. The reaction chamber according to claim 1, wherein, The reaction chamber is configured to process the substrate at a temperature of less than 200°C.

9. The reaction chamber according to claim 1, wherein, The sealing system also includes a vacuum source connected to the spacer plate; and The sealing system is configured to form a partial vacuum seal between the spacer plate and the sealing member in the following manner: The base is moved upward within the reaction chamber; The sealing member's upper surface contacts the spacer plate's lower surface; and A vacuum source is activated to create a partial vacuum seal between the spacer plate and the sealing member.

10. The reaction chamber according to claim 9, wherein, The sealing system is also configured to form the partial vacuum seal between the spacer plate and the sealing member in such a way that: Increase the pressure in the lower chamber space.

11. The reaction chamber according to claim 9, wherein, The sealing system is also configured to release the partial vacuum seal between the spacer plate and the sealing member in the following manner: Disconnect the vacuum source; and The base is moved downward within the reaction chamber.

12. The reaction chamber according to claim 1, wherein, The spacer plate comprises metal or metal alloy.

13. A sealing system, comprising: A sealing component, which is attached to a base in the reaction chamber; Spacer plate surrounding the base; A vacuum source, which is connected to a spacer plate; as well as A controller configured to turn on a vacuum source to cause at least a partial vacuum seal to be formed between a spacer plate and a sealing member, and to cause at least a partial fluid separation between an upper chamber space and a lower chamber space of a reaction chamber, wherein the upper chamber space is above the base and the lower chamber space is below the base.

14. The sealing system according to claim 13, wherein, The sealing member comprises an elastic material and is configured to expand when the partial vacuum seal is formed between the spacer plate and the sealing member.

15. The sealing system according to claim 13, wherein, The spacer plate includes: The first protruding part; The second protrusion; and The recessed portion between the first protruding portion and the second protruding portion, The controller is configured to form a partial vacuum seal between the spacer plate and the sealing member by performing a vacuum process in the space formed by the sidewalls of the first and second protrusions, the recessed portion, and the upper-facing surface of the sealing member.

16. The sealing system of claim 15, further comprising: One or more drill bits are disposed on the first surface of the recessed portion and configured to prevent the upper-facing surface of the sealing member from contacting the first surface of the recessed portion.

17. The sealing system according to claim 13, wherein, The controller is further configured to shut off the vacuum source to cause the partial vacuum seal between the spacer plate and the sealing member to be released.

18. A method comprising: The base in the reaction chamber is moved upwards from the first position to the second position; Based on translation, the upper-facing surface of the sealing member is brought into contact with the lower-facing surface of the spacer plate in the reaction chamber, wherein the sealing member is coupled to the base and wherein the spacer plate surrounds the base; A vacuum source coupled to the spacer plate is activated to form at least a partial vacuum seal between the lower-facing surface of the spacer plate and the upper-facing surface of the sealing member, and to induce at least a partial fluid separation between the upper chamber space and the lower chamber space in the reaction chamber, wherein the upper chamber space is above the base and the lower chamber space is below the base. as well as During substrate processing within the upper chamber, a partial vacuum seal is maintained between the spacer plate and the sealing member.

19. The method of claim 18, further comprising: Increase the pressure in the lower chamber space.

20. The method of claim 18, further comprising: After substrate processing: Deactivate the vacuum source to release the partial vacuum seal; and The base is moved downward from the second position to the third position.

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