Sealing system for cryogenic reaction chambers

Abstract

A reaction chamber is provided. [Solution] The reaction chamber may comprise a susceptor configured to support a substrate placed within the reaction chamber volume, an upper chamber space above the susceptor, a lower chamber space below the susceptor, and / or a sealing system. The sealing system may at least partially fluidly separate the upper chamber space and the lower chamber space. The sealing system may comprise a spacer plate surrounding the susceptor and / or a sealing member attached to the susceptor. The sealing system may be configured to form at least a partial vacuum seal between the spacer plate and the sealing member and to cause at least partial fluid separation between the upper chamber space and the lower chamber space.

Description

Technical Field

[0001] The present disclosure generally relates to semiconductor processing or reactor systems. Specifically, the present disclosure relates to a reactor system and components included therein, the components enabling a seal between an upper volume and a lower volume within a reaction chamber.

Background Art

[0002] Reaction chambers can be used in various processes during the formation of electronic devices on semiconductor substrates. For example, reaction chambers can be used to deposit various material layers on semiconductor substrates, etching materials, and / or cleaning surfaces.

[0003] A reaction chamber can include, for example, two spaces or volumes separated by a susceptor. The two spaces can include an upper chamber space above the susceptor and / or a lower chamber space below the susceptor. The lower chamber space can be vertically disposed below the upper chamber space, while the upper chamber space can be vertically disposed above the susceptor. Processing operations of one or more substrates can occur within the upper reaction space, and during operation, contaminants can undesirably be transferred from one chamber space to another. For example, contaminants can undesirably be transferred from the upper chamber space to the lower chamber space. Further, if the lower chamber space is sealed from the upper chamber space, the overall volume of the space in which the substrate processing operations occur can be reduced, and thus, a lesser amount of material can be used during the formation of electronic devices on the substrate. Accordingly, a system and method for providing a seal between two spaces within a reaction chamber (e.g., for at least partially fluidly separating two chambers) may be desirable.

Summary of the Invention

[0004] This summary is provided to introduce some concepts in a simplified form. These concepts are described in more detail below in the detailed description of exemplary embodiments of the present disclosure. This summary is not intended to identify any major or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. [Means for solving the problem]

[0005] The reactor systems disclosed herein can facilitate at least partial sealing between two spaces, between chambers, or between volumes within the reaction chamber of the reactor system. In various embodiments, the reactor system may comprise a reaction chamber, one of which has fluid communication with the other space. The reaction chamber may comprise a susceptor supporting a substrate placed within the reaction chamber and configured to translate upward and downward within the reaction chamber; an upper chamber space within the reaction chamber and above the susceptor; a lower chamber space within the reaction chamber and below the susceptor; and a sealing system. The sealing system may comprise a sealing member attached to the susceptor and a spacer plate surrounding the susceptor. The sealing system may be configured to form at least a partial vacuum seal between the spacer plate and the sealing member and to cause at least partial fluid separation between the upper chamber space and the lower chamber space.

[0006] In some embodiments, the sealing system may be configured to form a partial vacuum seal between the upper surface of the sealing member and the lower surface of the spacer plate.

[0007] In some embodiments, the sealing member may include an elastic material and may be configured to expand when a partial vacuum seal is formed between the spacer plate and the sealing member.

[0008] In some embodiments, the spacer plate may comprise a first raised portion, a second raised portion, and a recessed portion between the first and second raised portions. The sealing system may be configured to form a partial vacuum seal between the spacer plate and the sealing member by forming a vacuum process in the space formed by the side walls of the first and second raised portions, the recessed portion, and the upward surface of the sealing member. In some embodiments, the first or one of the second raised portions may have a width of 5 to 30 millimeters. In some embodiments, the recessed portion of the spacer place may have a width of 5 to 30 millimeters.

[0009] In some embodiments, the sealing system may further include one or more bits positioned on the first surface of the recessed portion. The bits may be configured to prevent the upward surface of the sealing member from contacting the first surface of the recessed portion.

[0010] In some embodiments, the reaction chamber may be configured to process the substrate at a temperature below 200°C.

[0011] In some embodiments, the sealing system may further include a vacuum source connected to the spacer plate. The sealing system may be configured to form a partial vacuum seal between the spacer plate and the sealing member by translating the susceptor upward within the reaction chamber, bringing the upward surface of the sealing member into contact with the downward surface of the spacer plate, and activating the vacuum source to form a partial vacuum seal between the spacer plate and the sealing member.

[0012] In some embodiments, the sealing system may be further configured to form a partial vacuum seal between the spacer plate and the sealing member by increasing the pressure in the lower chamber space.

[0013] In some embodiments, the sealing system may be further configured to release the partial vacuum seal between the spacer plate and the sealing member by stopping the vacuum source and translating the susceptor downward within the reaction chamber.

[0014] In some embodiments, the spacer plate may include a metal or metal alloy (e.g., aluminum). In some embodiments, the sealing member may include an elastic material (e.g., a Kalrez® brand product or a Viton® brand product).

[0015] In various embodiments, the method may include: translating upward a susceptor in a reaction chamber from a first position to a second position; bringing the upward surface of a sealing member into contact with the downward surface of a spacer plate in the reaction chamber based on the translational movement, wherein the sealing member is connected to the susceptor and the spacer plate surrounds the susceptor; activating a vacuum source connected to the spacer plate to form at least a partial vacuum seal between the downward surface of the spacer plate and the upward surface of the sealing member, causing at least partial fluid separation between the upper chamber space and the lower chamber space of the reaction chamber, wherein the upper chamber space is above the susceptor and the lower chamber space is below the susceptor; and maintaining the partial vacuum seal between the spacer plate and the sealing member during processing of the substrate in the upper chamber space.

[0016] In some embodiments, the method may further include increasing the pressure in the lower chamber space.

[0017] In some embodiments, the method may further include stopping the vacuum source to release a partial vacuum seal after processing the substrate, and translating the susceptor downward from a second position to a third position.

[0018] For the purpose of outlining the benefits achieved beyond this disclosure and the prior art, specific purposes and benefits of this disclosure are described above. Naturally, it should be understood that not all of these purposes or benefits are necessarily achieved by any particular embodiment of this disclosure. Therefore, a person skilled in the art will recognize that embodiments disclosed herein may be performed in a manner that achieves or optimizes one or more benefits taught or suggested herein, without necessarily achieving other purposes or benefits that may be taught or suggested herein.

[0019] All of these embodiments are intended to be within the scope of this disclosure. These embodiments and other embodiments will be readily apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, and this disclosure is not limited to any specific embodiment(s) considered.

[0020] This specification specifically identifies and concludes in the claims that are to be embodiments of the present disclosure, although the merits of the embodiments of the present disclosure may be more readily apparent from the descriptions of certain embodiments of the present disclosure when read in conjunction with the accompanying drawings. Elements that are given the same reference numerals throughout the drawings are intended to be the same. [Brief explanation of the drawing]

[0021] [Figure 1] This is a schematic diagram of an exemplary reactor system according to various embodiments. [Figure 2A] This is a schematic diagram of an exemplary reaction chamber in which a susceptor is positioned at the bottom, according to various embodiments. [Figure 2B] This is a schematic diagram of an exemplary reaction chamber in which the susceptor is positioned in a raised position, according to various embodiments. [Figure 3A] Exemplary spacer plates for providing a seal within a reaction chamber, according to various embodiments, are shown. [Figure 3B] Exemplary spacer plates for providing a seal within a reaction chamber, according to various embodiments, are shown. [Figure 4] A method for maintaining a seal within a reaction chamber, according to various embodiments, is shown. [Figure 5] A schematic view of a portion of a reaction chamber, according to various embodiments, is shown. [Figure 6] A schematic view of a portion of a reaction chamber, according to various embodiments, is shown. [Figure 7] A schematic view of a portion of a reaction chamber, according to various embodiments, is shown. [Figure 8] A schematic view of a portion of a reaction chamber, according to various embodiments, is shown. [Figure 9] A schematic view of a portion of a reaction chamber, according to various embodiments, is shown. **DETAILED DESCRIPTION**

[0022] It will be understood that the elements in the figures are illustrated for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to assist in improving the understanding of the illustrated embodiments of the present disclosure.

[0023] Certain embodiments and examples are disclosed below, but it will be understood by those skilled in the art that the scope of the present invention extends beyond the specifically disclosed embodiments and / or uses of the present invention, as well as its obvious variations and equivalents. Therefore, it is intended that the scope of the disclosed present invention should not be limited by the specific disclosed embodiments described hereinafter.

[0024] The examples presented herein are not meant to be a representation of the actual form of any particular material, apparatus, structure, or device, but are merely expressions used to illustrate embodiments of the present disclosure.

[0025] As used herein, the term “substrate” may mean one or more of any substrate materials, for example, one or more of any substrate materials that can be modified or on which a device, circuit, or film can be formed.

[0026] As used herein, the term “Atomic Layer Deposition” (ALD) may refer to a deposition process in which deposition cycles, preferably multiple consecutive deposition cycles, are carried out in a process chamber. Typically, during each cycle, a precursor is chemisorbed onto the deposition surface (e.g., the surface of a substrate or a previously deposited underlayment, e.g., a material deposited using a previous ALD cycle) to form a monolayer or sub-monolayer that does not readily react with additional precursors (e.g., a self-controlled reaction). Subsequently, a reactant (e.g., another precursor or reaction gas) may be introduced into the process chamber for use in converting the chemisorbed precursor into a desired material on the deposition surface, as needed. Typically, this reactant can further react with the precursor. Furthermore, a purging step may also be utilized during each cycle to remove excess precursor from the process chamber and / or excess reactant and / or reaction byproducts after the conversion of the chemisorbed precursor. Furthermore, as used herein, the term “atomic layer deposition” also means to include related terms, such as “chemical vapor atomic layer deposition,” “atomic layer epitaxy” (ALE), “molecular beam epitaxy” (MBE), gas source MBE, or organometallic MBE, as well as processes specified by chemical beam epitaxy when performed with alternating pulses of precursor composition(s), reactive gas, and purge (e.g., inert carrier) gas.

[0027] As used herein, the term "chemical vapor deposition" (CVD) may refer to any process in which a substrate is exposed to one or more volatile precursors, which react and / or decompose on the substrate surface to produce a desired deposit.

[0028] As used herein, the terms “film” and “thin film” may refer to any continuous or discontinuous structure and material deposited by the methods disclosed herein. For example, “film” and “thin film” may include 2D (Two Dimensions) materials, nanorods, nanotubes or nanoparticles, or even partial or complete molecular layers, partial or complete atomic layers, or clusters of atoms and / or molecules. “Film” and “thin film” may include materials or layers having pinholes, but may still be at least partially continuous.

[0029] As used herein, the term “contaminant” may refer to any unwanted material placed in a reaction chamber that may affect the purity of the substrate placed in the reaction chamber. The term “contaminant” may refer to, but is not limited to, unwanted deposits, metallic and nonmetallic particles, impurities, and waste placed in the reactor system or reaction chamber or any part thereof.

[0030] Reactor systems used in ALD, CVD, and / or similar processes can be used for a variety of applications, including the deposition and etching of materials onto a substrate surface. In various embodiments, referring to Figure 1, the reactor system 50 may comprise a reaction chamber 4, a susceptor 6 for holding a substrate 30 during processing, a fluid distribution system 8 (e.g., a showerhead) for distributing one or more reactants onto the surface of the substrate 30, and one or more reactant sources 10, 12 and / or carrier and / or purge gas sources 14, which are fluid-connected to the reaction chamber 4 via lines 16, 18, 20 and / or valves or controllers 22, 24, 26. The reactor system 50 may also comprise a vacuum source / pump 28 fluid-connected to the reaction chamber 4. One or more sealing systems 29 may isolate (e.g., fluidly at least partially isolate) portions of the volume within the reaction chamber 4.

[0031] Figure 1 shows a sealing system 29 implemented in a vertical furnace (e.g., reactor system 50) housing a single substrate (e.g., substrate 30) oriented substantially horizontally. The sealing systems described herein may also be implemented in vertical batch furnaces housing multiple substrates, diffusion ovens, horizontal furnaces in which wafers are oriented vertically, and / or other furnaces used for processing semiconductor substrates.

[0032] Referring to Figures 2A and 2B, embodiments of the present disclosure may include reactor systems and methods that can be used to process substrates in a reactor 100. In various embodiments, the reactor 100 may comprise a reaction chamber 110 for processing substrates. In various embodiments, the reaction chamber 110 may comprise an upper chamber space 112 and / or a lower chamber space 114, which may be configured to process one or more substrates. The lower chamber space 114 may be configured for loading and unloading substrates from the reaction chamber and / or to provide a pressure difference between the lower chamber space 114 and the upper chamber space 112.

[0033] In various embodiments, the substrate 150 and the susceptor 130 may be movable relative to each other. For example, in various embodiments, the lift pin 139 may be configured to allow the substrate 150 to separate from the susceptor 130 and / or to be positioned in contact with the susceptor 130 (i.e., supported by the susceptor 130). In various embodiments, the susceptor 130 may move up or down, for example via a susceptor elevator 104, so that the substrate 150 moves with the susceptor 130. In various embodiments, the lift pin 139 may move up or down, for example via a lift pin elevator / platform 202. In various embodiments, one of the susceptor 130 and the lift pin 139 may remain stationary while the other moves.

[0034] In various embodiments, the susceptor 130 may move from a loading position 103 to a processing position 106, as shown in Figure 2B, thereby moving the substrate 150 into the upper chamber space 112. The substrate 150 may then be processed within the upper chamber space 112. Fluids (e.g., precursors, reactant gases, carrier gases, etc.) may flow into the upper chamber space 112 through a fluid distribution system 180 (e.g., a showerhead) and come into contact with the substrate 150. The volume of the upper chamber space 112 within the reaction chamber 110 may be surrounded by at least the fluid distribution system 180, the susceptor 130, the spacer plate 160, and / or the sealing member 170.

[0035] The sealing member 170 may be set around the susceptor 130. The sealing member 170 may be ring-shaped and / or attached to the susceptor 130. The sealing member 170 may have an inner circumference with a diameter larger than the diameter of the substrate support area on the susceptor 130. The susceptor 130 may have an annular lip portion on its top surface outside the substrate support area, and the sealing member 170 may be positioned on the top surface outside the lip portion. Alternatively, the susceptor 130 may not have an annular lip portion on the top surface outside the substrate support area, and the sealing member 170 may be positioned on the top surface outside the substrate support area.

[0036] The susceptor 130 may comprise a top plate (not shown) and a heating block (not shown) on which the top plate is placed. The sealing member 170 may be ring-shaped and may be interposed between the top plate and the heating block. The sealing member 170 may be attached to the side of the heating block. The sealing member 170 may have a ring portion and an annular peripheral portion extending from the susceptor 130. The ring portion may be attached to the side of the heating block. The annular peripheral portion may comprise an upward surface 171 and a downward surface 172.

[0037] The sealing member 170 may move with the susceptor 130 as the susceptor rises or falls within the reaction chamber. When the susceptor 130 rises to the processing position 106, the upward surface of the sealing member 170 may come into contact with the spacer plate 160.

[0038] The sealing member 170 may be formed from an elastic material such as a heat-resistant elastic material like silicone, a perfluoroelastomer (e.g., perfluororubber (FFKM), Perfluoroelastomer) such as a Kalrez® brand product, or a fluoropolymer (e.g., fluororubber) such as a Viton® brand product. For example, the maximum operating temperature of a Viton® brand product may be 230°C, while the maximum operating temperature of a Kalrez® brand product may be 330°C. In various embodiments, the reactor 100 may be configured to process the substrate at a temperature below 200°C, and consequently, the sealing member 170 may include either a Viton® brand product or a Kalrez® brand product. In other embodiments, the reactor 100 may be configured to process the substrate at a temperature below 300°C, and consequently, the sealing member 170 may include a Kalrez® brand product.

[0039] In various embodiments, the reactor 100 may include a spacer plate 160, at least a portion of which may protrude from the chamber sidewall into the reaction chamber. The spacer plate 160 may be positioned below the fluid distribution system 180. In various embodiments, the spacer plate 160 may surround a susceptor in the reaction chamber 110. The spacer plate 160 may connect with the sealing member 170 when the susceptor 130 is moved or positioned in a processing position (e.g., a raised position). For example, the downward surface of the spacer plate 160 may connect with and / or contact the upward surface of the sealing member 170.

[0040] Figure 3A shows a top view of the downward-facing surface of an exemplary spacer plate 300 (e.g., spacer plate 160), while Figure 3B shows a cross-sectional view of the spacer plate 300. The spacer plate 300 may have an opening 302 that allows fluid from the fluid distribution system 180 to enter the upper chamber space 112. The spacer plate 300 may further comprise an outer raised portion 304, an inner raised portion 306, and / or a recessed portion 308. In various embodiments, the outer raised portion 304 may have a first circumference C1, the recessed portion 308 may have a second circumference C2, and the inner raised portion 306 may have a third circumference C3. The second circumference C2 may be smaller than the first circumference C1 and larger than the third circumference C3. The first circumference C1 may be larger than the second circumference C2 and the third circumference C3. The height of the outer ridge 304 and / or the inner ridge 306 may be greater than the height of the recessed portion 308. The width "a" of the outer ridge 304 and / or the inner ridge 306 may be in the range of 10 to 30 nanometers. The outer ridge 304 and / or the inner ridge may include a smooth surface 320 that can contact the sealing member 170. Furthermore, the width "b" of the recessed portion may be in the range of 10 to 20 nanometers. The spacer plate 300 may include materials such as quartz, ceramic, or metal, for example, titanium, aluminum, stainless steel, or Hastelloy.

[0041] In various embodiments, the surface 310 of the recessed portion 308 may comprise one or more bits 312. The bits 312 may have cylindrical, cubic, hexagonal prism, triangular prism shapes, and the like. The width of the bits 312 may be 1 to 2 nm, while the height of the bits may be 2 to 10 nm. The bits 312 may be configured to prevent the upward surface 171 of the sealing member 170 from contacting the downward surface 172 of the recessed portion 308. Furthermore, the bits 312 may be configured to generate a uniform vacuum between the upward surface 171 of the sealing member 170 and the spacer plate 300. The recessed portion 308 may further comprise an inlet 322 connected to a vacuum source (e.g., vacuum source 190) and / or an inert gas source (e.g., inert gas source 196).

[0042] Referring again to Figures 2A and 2B, in various embodiments, the spacer plate 160 and the sealing member 170 may be configured to control the flow of fluid within the reaction chamber. The upper chamber space 112 and the lower chamber space 114 may be separated or isolated (fluidically and / or physically) by the sealing member 170 and / or the spacer plate 160. For example, a sealing member 170 attached to a susceptor 130 may connect, contact, and / or engage with the raised portions of the spacer plate 160 (e.g., the outer raised portion 304 and the inner raised portion 306) when the susceptor 130 is in the processing position 106. In various configurations, the pressure in the lower chamber space 114 may be increased so that the increased pressure pushes the sealing member 170 upward, causing the upward surface 171 of the sealing member 170 to contact the raised portion of the spacer plate 160. The lower chamber space 114 may be connected to a vacuum source 198 (e.g., a vacuum pump). When the vacuum source 198 is activated, it can provide vacuum pressure and cause gas to flow from the vacuum source 198 into the lower chamber space 114, thereby increasing the internal pressure in the lower chamber space 114. When the vacuum source 198 is stopped, it can cause gas to flow from the lower chamber space 114 back to the vacuum source 198.

[0043] The sealing member 170 and / or the spacer plate 160 can fluidly separate the upper chamber space 112 and the lower chamber space 114 by forming at least a partial vacuum seal between the portion of the sealing member 170 and the portion of the spacer plate 160. For example, the partial vacuum seal may be formed in the space 195 surrounded by the side walls of the raised portion of the spacer plate 160, the recessed portion of the spacer plate (e.g., recessed portion 308), and the portion of the sealing member 170 between the raised portions of the spacer plate 160. The portion of the sealing member 170 between the raised portions of the spacer plate 160 may deform and extend toward the recessed portion of the spacer plate 160. The spacer plate 160 may be connected to a vacuum source 190 (e.g., a vacuum pump) and / or an inert gas source 196 (e.g., via an inlet 322). When activated, the vacuum source 190 provides vacuum pressure, causing gas to flow from the space 195 to the vacuum source 190, thereby forming a vacuum seal within the space 195. When the vacuum source 190 is stopped, it can allow gas to flow from the space 195 to the vacuum source 190, thereby releasing the vacuum seal formed within the space 195. Furthermore, after the vacuum source 190 is stopped, the inert gas source 196 can be activated to allow one or more inert gases (e.g., N2, Ar, He, etc.) to flow from the inert gas source 196 to the space 195, thereby releasing the vacuum seal formed within the space 195. The inlet 322 of the recessed region 308 of the spacer plate can provide a passage for gas flow between the space 195 and the vacuum source 196. The controller 192 can control the formation and / or release of the vacuum seal in the space 195 by controlling the activation and / or deactivation of the vacuum source 190, as well as the activation and / or deactivation of the inert gas source 196.

[0044] At least partial vacuum sealing of the upper chamber space 112 from the lower chamber space 114 may be desirable to prevent or reduce the entry and / or contact of precursor gases and / or other fluids used in the processing of the substrate 150 into and / or with the lower chamber space 114 of the reaction chamber 110. For example, precursor gases used to process the substrate in the reaction space may include corrosive deposition precursors, which may come into contact with the lower chamber space 114 to generate undesirable deposits / contaminants / particles, which may then be reintroduced into the upper chamber space 112, thereby providing a source of contaminants to the substrate placed in the reaction space. At least partial vacuum sealing of the upper chamber space 112 from the lower chamber space 114 may also limit the area where plasma is generated. In various other embodiments described herein, embodiments may also prevent plasma from coming into contact with the sides of the susceptor (e.g., the heating block), the inner walls of the reactor 100, and other places where conductive members are exposed, resulting in a lower stray potential applied to the processing target. As a result, the occurrence of charging damage caused by plasma and pickup problems can be reduced.

[0045] In various embodiments, to form a vacuum seal between the upper chamber space 112 and the lower chamber space 114, the reaction chamber 110 may include a sealing system positioned between the susceptor 130, the chamber sidewalls of the reaction chamber, and / or the fluid distribution system 180. For example, the sealing system within the reaction chamber 110 may include a sealing member 170 attached to the susceptor 130, a spacer plate 160, a vacuum source 190 for forming at least a partial vacuum seal between the upper chamber space 112 and the lower chamber space 114, an inert gas source 196 for releasing the partial vacuum seal, and / or a controller 192.

[0046] During operation, referring to method 400 shown in Figure 4, in step 402, a substrate (e.g., substrate 150) may be provided into a reaction chamber (e.g., reaction chamber 110 of reactor 100). At the time the substrate is provided, the susceptor supporting the substrate may be in a first position (e.g., lower position or load position). For example, Figure 5 shows a susceptor 504 (e.g., susceptor 130) in which the upward surface of the susceptor 504 may be in a first position 508 (e.g., lower position or load position). A sealing member 506 (e.g., sealing member 170) may be attached to the susceptor 504, and when the susceptor 504 is in the first position 508, the upward surface 514 of the sealing member 506 is not in contact with the raised portions 516 and 518 of the spacer plate 502 (e.g., outer raised portion 304 and inner raised portion 306). The spacer plate 502 may also have a recessed portion 520 (e.g., recessed portion 308) between the raised portions 516 and 518, and the recessed portion 520 may be connected to a vacuum source 522 (e.g., vacuum source 190) and / or an inert gas source 530. When the upward surface of the susceptor 504 is in the first position 508, the fluid can flow freely between the upper chamber space 510 (e.g., upper chamber space 112) and the lower chamber space 512 (e.g., lower chamber space 114). Thus, the sealing member 506 may be in a relaxed state (e.g., without deformation or expansion).

[0047] Referring again to Figure 4, in step 404, the susceptor may be translated upward from a first position (e.g., lower position or load position) to a second position (e.g., raised position or processing position) so that the sealing member attached to the susceptor can contact the portion of the spacer plate in step 406. For example, as shown in Figure 6, the susceptor 504 may be translated upward so that the upward surface of the susceptor 504 is in the raised position or processing position 602. The processing position of the susceptor 504 may be a position where the susceptor 504 is positioned (e.g., at the top of the reaction chamber or at a desired distance from the fluid distribution system) during processing of the substrate. During translation, the upward surface 514 of the sealing member 506 may engage, contact, and / or connect with the raised portions 516 and 518 of the spacer plate 502. Contact between the upward surface 514 of the sealing member 506 and the raised portions 516 and 518 of the spacer plate 502 may form a space 604. The space 604 may be surrounded or may be surrounded by the side walls of the raised portions 516 and 518, the upward surface 514 of the sealing member 506, and / or the downward surface of the recessed portion 520. The vacuum source 522 may not be activated, and consequently the sealing member 506 may still be in a relaxed position (e.g., without deformation or expansion).

[0048] In step 408 of Figure 4, the pressure in the lower chamber space of the reactor chamber can be increased. For example, as shown in Figure 7, the increased pressure 702 can push upward the annular peripheral portion of the sealing member 506 so that the upward surface 514 of the sealing member 506 can contact the raised portions 516 and 518 of the spacer plate 502. The lower chamber space 512 can be connected to a vacuum source (e.g., vacuum source 198), which, when activated, provides vacuum pressure and can cause gas to flow from the vacuum source into the lower chamber space 512, thereby increasing the internal pressure in the lower chamber space 512.

[0049] In step 410 of Figure 4, a vacuum seal may be formed between the upper and lower chamber spaces of the reaction chamber by activating a vacuum source connected to the reaction chamber. For example, as shown in Figure 8, a vacuum source 522 may be activated and a vacuum process may be carried out in space 604. The vacuum process may include allowing gas to flow from space 604 to the vacuum source 522, thereby forming a vacuum seal within space 604. The sealing member 506 may include an elastic material, and by forming a vacuum in space 604, the elastic material of portion 802 of the sealing member 170 may be deformed, extending toward the recessed portion 520 of the spacer plate 502. The extended portion 802 may contact one or two bits positioned on the downward surface of the recessed portion 520. The bits may present the extended portion 802 from direct contact with the downward surface of the recessed portion 520. The vacuum source 522 may be activated when it receives an activation signal from a controller (e.g., controller 192).

[0050] In response to the vacuum seal formed within space 604, at least a partial vacuum seal may be formed between the spacer plate 502 and the sealing member 506, and the upper chamber space 510 may be isolated from the lower chamber space 512. Thus, the upper chamber space 510 may be at least partially fluidically isolated from the lower chamber space 512.

[0051] In step 412 of Figure 4, the vacuum seal (e.g., a vacuum seal formed in space 604) may be maintained while the substrate of step 402 is processed in the upper chamber space 510. The vacuum seal may be maintained by keeping the vacuum source on.

[0052] In step 414 of Figure 4, the vacuum source may be stopped to release the vacuum seal. In addition, an inert gas source may be started. For example, as shown in Figure 9, the vacuum source 522 may be stopped and the inert gas source 530 may be started. The inert gas source 530 may cause gas to flow from the inert gas source 530 into the space 604, thereby releasing the vacuum seal in the space 604. For example, one or more inert gases (e.g., molecular nitrogen, helium, argon, or other inert gases) may be pumped into the space 604. The elastic material of the extended portion 802 may return to its relaxed state. The gas recently pumped into the space 604 may help the extended portion 802 return to its relaxed state. The vacuum source 522 may be stopped when it receives a stop signal from the controller (e.g., controller 192).

[0053] In step 416 of Figure 4, the susceptor 504 may be translated downward from a raised position (e.g., raised position 602) to a lower position (e.g., a first position 508 or another lower position). Translating the susceptor downward may allow the fluid to flow freely again between the upper chamber space 510 and the lower chamber space 512.

[0054] While exemplary embodiments of this disclosure are described herein, it should be understood that this disclosure is not limited thereto. For example, reactor systems are described in relation to various specific configurations, but this disclosure is not necessarily limited to these embodiments. Various modifications, variations, and enhancements of the systems and methods described herein can be made without departing from the spirit and scope of this disclosure.

[0055] The examples presented herein are not intended to represent the actual appearance of any particular material, structure, or device, but are merely idealized representations used to illustrate embodiments of the disclosure.

[0056] The specific embodiments illustrated and described are illustrative of the present invention and its best mode, and are not intended to limit the embodiments or scope of the invention in any way. Furthermore, for the sake of brevity, other functional aspects of conventional manufacturing, association, preparation, and systems may not be described in detail. Additionally, the connecting lines shown in various figures are intended to represent illustrative functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in actual systems and / or may not exist in some embodiments.

[0057] It will be understood that the configurations and / or approaches described herein are essentially illustrative, and these particular embodiments or examples should not be considered limiting, as numerous variations are possible. The specific routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various operations illustrated may be performed in the order illustrated, or in other orders, or, in some cases, omitted.

[0058] The subject matter of this disclosure includes all novel and non-obvious combinations and partial combinations thereof of the various processes, systems, and configurations disclosed herein, as well as all their equivalents.

Claims

1. A reaction chamber, It is a susceptor, It supports the substrate placed in the reaction chamber, and A susceptor configured to translate upward and downward within the reaction chamber, The upper chamber space within the reaction chamber and above the susceptor, The lower chamber space within the reaction chamber and below the susceptor, A sealing system, The sealing member attached to the susceptor, The susceptor is surrounded by a spacer plate, A reaction chamber comprising a sealing system configured to form at least a partial vacuum seal between the spacer plate and the sealing member, thereby causing at least partial fluid separation between the upper chamber space and the lower chamber space.

2. The reaction chamber according to claim 1, wherein the sealing system is configured to form the partial vacuum seal between the spacer plate and the sealing member by forming the partial vacuum seal between the upper surface of the sealing member and the lower surface of the spacer plate.

3. The sealing member includes an elastic material, The reaction chamber according to claim 1, wherein the sealing member is configured to expand when the partial vacuum seal is formed between the spacer plate and the sealing member.

4. The aforementioned spacer plate, The first raised section and, The second raised section, It comprises a recessed portion between the first raised portion and the second raised portion, The reaction chamber according to claim 1, wherein the sealing system is configured to form the partial vacuum seal between the spacer plate and the sealing member by performing a vacuum process in the space formed by the side walls of the first and second raised portions, the recessed portion, and the upward surface of the sealing member.

5. The reaction chamber according to claim 4, wherein one of the first or second raised portion includes a width of 5 to 30 millimeters.

6. The reaction chamber according to claim 4, wherein the recessed portion has a width of 5 to 30 millimeters.

7. The reaction chamber according to claim 4, further comprising one or more bits, the sealing system, which are positioned on the recess and configured to prevent the upward surface of the sealing member from contacting the surface of the recess.

8. The reaction chamber according to claim 1, wherein the reaction chamber is configured to process the substrate at a temperature of less than 200°C.

9. The sealing system further comprises a vacuum source connected to the spacer plate, The aforementioned sealing system The susceptor is translated upward within the reaction chamber, The upper surface of the sealing member is brought into contact with the lower surface of the spacer plate, The reaction chamber according to claim 1, configured to form the partial vacuum seal between the spacer plate and the sealing member by activating the vacuum source in order to form the partial vacuum seal between the spacer plate and the sealing member.

10. The reaction chamber according to claim 9, wherein the sealing system is further configured to form the partial vacuum seal between the spacer plate and the sealing member by increasing the pressure in the lower chamber space.

11. The aforementioned sealing system The vacuum source is stopped, The reaction chamber according to claim 9, further configured to release the partial vacuum seal between the spacer plate and the sealing member by translating the susceptor downward within the reaction chamber.

12. The reaction chamber according to claim 1, wherein the spacer plate comprises a metal or a metal alloy.

13. A sealing system, A sealing member attached to the susceptor inside the reaction chamber, The spacer plate surrounding the susceptor, The vacuum source connected to the spacer plate, A sealing system comprising: a controller configured to turn on the vacuum source to cause the formation of at least a partial vacuum seal between the spacer plate and the sealing member, and to cause at least a partial fluid separation between the upper chamber space and the lower chamber space of the reaction chamber, wherein the upper chamber space is above the susceptor and the lower chamber space is below the susceptor.

14. The sealing system according to claim 13, wherein the sealing member includes an elastic material and is configured to expand when the partial vacuum seal is formed between the spacer plate and the sealing member.

15. The aforementioned spacer plate, The first raised section and, The second raised section, It comprises a recessed portion between the first raised portion and the second raised portion, The sealing system according to claim 13, wherein the controller is configured to cause the vacuum source to perform a vacuum process in the space formed by the side walls of the first and second raised portions, the recessed portion, and the upward surface of the sealing member, thereby causing the formation of the partial vacuum seal between the spacer plate and the sealing member.

16. The sealing system according to claim 15, further comprising one or more bits, which are positioned on the first surface of the recessed portion and configured to prevent the upward surface of the sealing member from contacting the first surface of the recessed portion.

17. The sealing system according to claim 13, wherein the controller is further configured to turn off the vacuum source, causing the partial vacuum seal between the spacer plate and the sealing member to be released.

18. It is a method, The susceptor inside the reaction chamber is translated upward from the first position to the second position, Based on the aforementioned translational movement, the upper surface of the sealing member is brought into contact with the lower surface of the spacer plate in the reaction chamber, wherein the sealing member is connected to the susceptor, and the spacer plate surrounds the susceptor, and the contact is made. Activating a vacuum source connected to the spacer plate to form at least a partial vacuum seal between the downward surface of the spacer plate and the upward surface of the sealing member, and to cause at least partial fluid separation between the upper chamber space of the reaction chamber and the lower chamber space within the reaction chamber, wherein the upper chamber space is above the susceptor and the lower chamber space is below the susceptor. A method comprising maintaining the partial vacuum seal between the spacer plate and the sealing member during processing of the substrate in the upper chamber space.

19. The method according to claim 18, further comprising increasing the pressure in the lower chamber space.

20. After the above treatment of the substrate, To release the aforementioned partial vacuum seal, the vacuum source is stopped, The method according to claim 18, further comprising translating the susceptor downward from the second position to the third position.

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