Susceptor and method for manufacturing the same

Abstract

This invention provides a method for manufacturing a ceramic susceptor that prevents leakage due to poor bonding of the base body made of MMC material. [Solution] The base body includes a lower plate 210 and an upper plate 220 made of MMC (Metal Matric Composite) material, and a joint between them. The process includes the steps of sequentially laminating a first activated metal layer 321 and a first aluminum layer onto the joint surface of the upper plate, sequentially laminating a second activated metal layer 311 and a second aluminum layer onto the joint surface of the lower plate, and interposing a brazing filler layer between the first aluminum layer of the upper plate and the second aluminum layer of the lower plate, and converting the brazing filler layer, the first aluminum layer and the second aluminum layer into a brazing joint layer 325 by heat treatment, thereby brazing the lower plate and the upper plate. The base body includes a cooling channel 215 formed in the groove by the brazing joint.

Description

Technical Field

[0001] The present invention relates to a ceramic susceptor, and particularly to brazing joining for improving the bonding strength between the upper and lower plates of a base body made of MMC (Metal Matric Composite) material.

Background Art

[0002] Generally, a semiconductor device or a display device is manufactured by a semiconductor process in which a plurality of thin film layers including a dielectric layer and a metal layer are sequentially laminated on a glass substrate, a flexible substrate, or a semiconductor wafer substrate and then patterned. Such a semiconductor process apparatus includes a susceptor such as an electrostatic chuck or a ceramic heater for holding a glass substrate, a flexible substrate, a semiconductor wafer substrate, etc. and processing a semiconductor process. In the process of dry etching (etching) the thin film layer formed on the substrate, an electrostatic chuck is mainly used.

[0003] FIGS. 1A and 1B are diagrams for explaining the problems of a conventional ceramic susceptor. FIG. 1A shows the joining of the upper and lower plates by a brazing filler of an Al-based base body, and FIG. 1B shows the joining of the upper and lower plates by a brazing filler of an MMC (Metal Matric Composite) material base body.

[0004] As shown in FIG. 1A, the joining of the upper and lower plates of the Al-based base body of a conventional ceramic susceptor can be achieved by a general aluminum brazing joining method. At this time, since the materials of the base body and the brazing filler are of the same series of materials, the brazing joining can be performed well.

[0005] In recent years, with the introduction of extreme processes, Metal Matrice Composite (MMC) materials, which are composites of metal and ceramic powder, have been applied to the base body of ceramic susceptors, particularly to compensate for low-temperature deformation. However, as shown in Figure 1B, in the case of conventional ceramic susceptor base bodies made of MMC material, when the upper and lower plates are joined using a general aluminum brazing method, the material of the brazing filler located between the MMC materials is from a different series of materials than the MMC material. As a result, poor joining can cause leakage of process gases such as He gas during the process within the semiconductor equipment, leading to problems such as refrigerant leakage and poor vacuum in the cooling channel, which can cause defects in the process itself or a decrease in yield. [Overview of the project] [Problems that the invention aims to solve]

[0006] Therefore, the present invention was devised to solve the above-mentioned problems, and the object of the present invention is to provide a method for manufacturing a ceramic susceptor base body and a ceramic susceptor to which the base body is applied, by applying a multilayer (active metal layer and aluminum layer) surface treatment between the base body plate and the brazing filler in order to improve the bonding strength between the upper and lower plates of the MMC (Metal Matric Composite) base body. [Means for solving the problem]

[0007] First, to summarize the features of the present invention, a method for manufacturing a susceptor base body relating to one aspect of the present invention for achieving the above objectives, wherein the base body includes a lower plate and an upper plate made of a material, and a joint between them, and may include the steps of sequentially laminating a first activated metal layer and a first aluminum layer on the joint surface of the upper plate, sequentially laminating a second activated metal layer and a second aluminum layer on the joint surface of the lower plate, and interposing a brazing filler layer between the first aluminum layer of the upper plate and the second aluminum layer of the lower plate, and converting the brazing filler layer, the first aluminum layer, and the second aluminum layer into a brazing joint layer by heat treatment to braze-join the lower plate and the upper plate.

[0008] A groove may be included between the joining surfaces of the lower plate.

[0009] The first active metal layer and the second active metal layer may contain one or more of Ti, Zr, Nb, Hf, or Ta.

[0010] The thickness of the first active metal layer and the second active metal layer may be 1 μm to 5 μm.

[0011] The thickness of the first aluminum layer and the second aluminum layer may be 5 μm to 10 μm.

[0012] Preferably, the proportion of Al crystal grains in the brazing bonding layer with a diameter size greater than 0 μm and less than 6 μm is greater than the proportion of Al crystal grains with a diameter size of 6 μm or more and less than 60 μm.

[0013] Al crystal particles in the brazing bond layer with a diameter size greater than 0 μm and less than 6 μm are more abundantly distributed in the boundary region between the first active metal layer and the second active metal layer compared to the central region of the brazing bond layer.

[0014] Preferably, the diameter size of the Al crystal grains in the central region of the brazing bonded layer is 6 μm or more and less than 60 μm, and the diameter size of the Al crystal grains in the boundary region with the first aluminum layer of the upper plate or the second aluminum layer of the lower plate is greater than 0.0 μm and less than 6 μm.

[0015] Furthermore, a susceptor comprising a base body and an insulating plate according to another aspect of the present invention, wherein the base body comprises a lower plate and an upper plate made of the same material, and a joint between them, the joint comprising a first activated metal layer on the upper plate side, a second activated metal layer on the lower plate side, and a brazing joint layer between the first activated metal layer and the second activated metal layer, the brazing joint layer may be formed by inserting a brazing filler layer between the first aluminum layer and the second aluminum layer, which are formed before brazing, and then converting the brazing filler layer, the first aluminum layer and the second aluminum layer by heat treatment. [Effects of the Invention]

[0016] According to the susceptor and its manufacturing method according to the present invention, by applying a multilayer (active metal layer and aluminum layer) surface treatment between each plate of the upper and lower plates of the base body and the brazing filler, the bonding strength between the upper and lower plates of the MMC base body can be improved. This reduces leakage of He gas and other gases in the electrostatic chuck body within the semiconductor equipment, improves the vacuum level, reduces leakage of the coolant in the cooling channel, and as a result, contributes to maintaining a stable process and improving yield. In the example, it was confirmed that the He gas leak rate was reduced from the conventional level of 1.0E-03 (mbar*l / s) to the improved level of 2.0E-08 (mbar*l / s). [Brief explanation of the drawing]

[0017] The accompanying drawings, included as part of the detailed description to aid in understanding the present invention, provide examples relating to the present invention and illustrate the technical idea of ​​the invention together with the detailed description.

[0018] [Figure 1A-1B] This diagram illustrates the problems with conventional susceptors. [Figure 2A-2C] This is a cross-sectional view of the lower plate and upper plate constituting the base body, illustrating a method for manufacturing a susceptor according to one embodiment of the present invention. [Figure 3] This figure illustrates the structure of joining an insulating plate to the base body of a susceptor according to one embodiment of the present invention. [Figure 4] This is an example of a photograph showing the actual fabrication of the lower plate of the base body of a susceptor according to one embodiment of the present invention. [Figure 5] This is an example of a photograph taken from above of the actual fabricated upper plate of the base body of a susceptor according to one embodiment of the present invention. [Figure 6] This is an example of an SEM image of a cross-section of a joint formed on the base body of a susceptor according to one embodiment of the present invention. [Figures 7A-7F] Table 3 shows SEM images of Al crystal particles in the brazing bond layer and graphs of the size distribution of Al crystal particles for each of Examples 1 to 6. [Modes for carrying out the invention]

[0019] The present invention will be described in detail below with reference to the accompanying drawings. At this time, in each figure, the same components are denoted by the same reference numerals as much as possible. In addition, detailed descriptions of functions and / or configurations that are already known will be omitted. The content disclosed below focuses on the parts necessary for understanding the operations according to various embodiments, and descriptions of elements that may obscure the gist of the description are omitted. Also, some components in the figures may be exaggerated, omitted, or shown schematically. The sizes of the components do not fully reflect the actual sizes, and thus the content described herein is not limited by the relative sizes or intervals of the components depicted in each figure.

[0020] In describing embodiments of the present invention, if it is determined that specific descriptions of publicly known technologies related to the present invention may obscure the gist of the present invention, the detailed descriptions thereof shall be omitted. And the terms described below are terms defined in consideration of the functions in the present invention, and these may be changed depending on the intention or convention of the user, operator, etc. Therefore, the definition should be made based on the content throughout this specification. The terms used in the detailed description are merely for explaining the embodiments of the present invention and should never be limiting. Unless otherwise specified, the singular form includes the meaning of the plural form. In this specification, expressions such as "including" or "comprising" are for indicating a certain characteristic, number, step, operation, element, part thereof, or combination, and should not be construed as excluding the existence or possibility of one or more other characteristics, numbers, steps, operations, elements, part thereof, or combination other than those described.

[0021] Also, terms such as first, second, etc. may be used to describe various components, but these components are not limited by the above terms, and the above terms are used only for the purpose of distinguishing one component from another.

[0022] First, in the present invention, a (ceramic) susceptor is a semiconductor device for processing various target substrates for processing purposes, such as semiconductor wafers, glass substrates, flexible substrates, etc., and can include electrodes (or conductors) such as an electrostatic chuck electrode used as an electrostatic chuck for holding the target substrate to be processed. In some cases, the susceptor can further include a heating element (or heating wire) pattern for heating the target substrate to a predetermined temperature, or electrodes (or conductors) such as a high-frequency electrode for performing process treatments such as plasma-enhanced chemical vapor deposition on the target substrate to be processed. Therefore, although the electrodes (or conductors) mentioned below will be described as electrostatic chuck electrodes, it is not limited thereto, and in some cases, the electrostatic chuck electrode may be used as a heating element (or heating wire) pattern.

[0023] For example, the electrostatic chuck electrode or the high-frequency electrode may be composed of a conductive metal material such as silver (Ag), gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo), and titanium (Ti), or an alloy thereof. The electrostatic chuck electrode receives a bias of a power source in a semiconductor manufacturing process to generate an electrostatic force so that the substrate located on the upper surface of the susceptor can be chucked. When unloading the substrate, a reverse bias is received to cause discharge and de-chucking. The high-frequency electrode can receive a power source in a semiconductor manufacturing process and enable process treatments such as plasma-enhanced chemical vapor deposition and dry etching on the substrate located on the upper surface of the susceptor. Also, for example, the heating element (or heating wire) that can be provided in the susceptor may be formed in the form of a plate coil by a resistance wire having a predetermined resistance or in the form of a flat plate. Also, the heating element (or heating wire) may be formed in a multilayer structure for precise temperature control. Such a heating element (or heating wire) receives a power supply and can function to heat the substrate located on the upper surface of the susceptor to a constant temperature for performing a predetermined semiconductor manufacturing process.

[0024] The susceptor 1000 of the present invention includes a base body (1100 in Figure 3) which includes the joining of a lower plate (210 in Figure 3) and an upper plate (220 in Figure 3), and an insulating plate (1200 in Figure 3) which is joined thereon, and the conductors (or electrodes) 1210 and 1220 described above are arranged / embedded within the insulating plate (1200 in Figure 3).

[0025] The method for manufacturing a susceptor 1000 according to one embodiment of the present invention and the structure of the susceptor 1000 manufactured thereby will be described in detail below with reference to Figures 2A to 2C.

[0026] Figures 2A to 2C are cross-sectional views of the lower and upper plates constituting the base body, illustrating a manufacturing method for a susceptor 1000 according to one embodiment of the present invention.

[0027] First, referring to Figure 2A, in order to manufacture a susceptor 1000 according to one embodiment of the present invention, first, a first activated metal layer 321 and a first aluminum layer 322 are sequentially laminated on the joining surface of the upper plate 220, that is, on one side surface of the upper plate 220. As described below, the brazing filler layer 323 is interposed between the first aluminum layer 322 and the second aluminum layer 312.

[0028] Furthermore, referring to Figure 2B, the second activated metal layer 311 and the second aluminum layer 312 are sequentially laminated on the upper surface of the substrate, excluding the joint surface of the lower plate 210, i.e., the groove 211 (see Figure 4) which serves as the cooling channel (215 in Figure 3) of the lower plate 210.

[0029] Furthermore, referring to Figure 2C, the brazing filler layer 323 is interposed between the first aluminum layer 322 and the second aluminum layer 312, and the lower plate 210 and the upper plate 220 are brazed together to produce the base body 1100 of the susceptor 1000 of the present invention, which is made up of the joined lower plate 210 and the upper plate 220.

[0030] For the brazing joint, the brazing filler layer 323 is interposed between the first aluminum layer 322 and the second aluminum layer 312, the lower plate 210 and the upper plate 220 are brought into close contact, and then heated to a high temperature for heat treatment followed by cooling. In this method, the conductive filler of the brazing filler layer 323 can join the lower plate 210 and the upper plate 220. For example, Al-Si metal filler, Au-Ni metal filler, Al-based metal filler, etc., may be used as the conductive filler of the brazing filler layer 323. One side of the upper plate 220 is joined to the lower plate 210, and as shown in Figure 5, the other side of the upper plate 220 is provided with a hole 225 corresponding to a hole in an insulating plate (1200 in Figure 3). The hole 225 is connected to a flow path for providing cooling gas, etc., and may be configured to provide cooling gas onto the insulating plate (1200 in Figure 3) as needed.

[0031] Here, the lower plate 210 and the upper plate 220 are made of a material that complements the process environment to prevent deformation, especially in response to low-temperature deformation, namely an MMC (Metal Matric Composite) material of Al-ceramic composite powder. For example, they may be manufactured from a powder in which Al is compounded with SiC, Si, B (Boron), Al2O3 (alumina), graphite, etc.

[0032] Furthermore, the first active metal layer 321 of the upper plate 220 and the second active metal layer 311 of the lower plate 210 may contain one of Ti, Zr, Nb, Hf, or Ta, or an alloy thereof, and their thickness may be formed to 1 μm to 5 μm.

[0033] Furthermore, the first aluminum layer 322 of the upper plate 220 and the second aluminum layer 312 of the lower plate 210 may be formed to a thickness of 5 μm to 10 μm.

[0034] The first activated metal layer 321 of the upper plate 220 and the second activated metal layer 311 of the lower plate 210 can work to improve the bondability by melting together with the conductive filler and the first aluminum layer 322 and the second aluminum layer 312 during the brazing bonding process. That is, the first activated metal layer 321 of the upper plate 220 and the second activated metal layer 311 of the lower plate 210 can undergo oxidation-reduction reactions at the interface with different physical and chemical properties to improve the bondability on both sides and form interfacial products (see "Bonding Ceramics and Metals Using Activated Metal Brazing," Journal of the Microelectronics & Packaging Society, Vol.18, No.3, pp.1-7, 2011). Therefore, in the brazing bonding process, the brazing filler layer 323, the first aluminum layer 322, and the second aluminum layer 312 are converted into a brazing bonding layer 325 by heat treatment, resulting in a firm and stable brazing bond between the lower plate 210 and the upper plate 220.

[0035] Once the base body 1100 is obtained by the manufacturing method of the susceptor 1000 according to one embodiment of the present invention as described above, the susceptor 1000 according to one embodiment of the present invention may be manufactured by joining it with the insulating plate 1200.

[0036] Figure 3 is a diagram illustrating the structure of joining the insulating plate 1200 to the base body 1100 of the susceptor 1000 according to one embodiment of the present invention.

[0037] Referring to Figure 3, a susceptor 1000 according to one embodiment of the present invention includes a base body 1100 including the joining of a lower plate 210 and an upper plate 220, and an insulating plate 1200 joined thereon.

[0038] Conductors (or electrodes) 1210 and 1220 are arranged / embedded within such insulating plate 1200. As described above, the susceptor 1000 is a semiconductor device for processing substrates for various purposes, such as semiconductor wafers, glass substrates, and flexible substrates. The conductors (or electrodes) 1210 and 1220 include electrostatic chuck electrodes used as electrostatic chucks to hold the substrate, and may further include a heating element (or heating wire) for heating the substrate to a predetermined temperature, and / or high-frequency electrodes for process processing such as plasma-enhanced chemical vapor deposition and dry etching of the substrate.

[0039] The base body 1100 includes a cooling channel 215 formed in the groove 211 by brazing bonding between the lower plate 210 and the upper plate 220 by a brazing filler layer 323. The cooling channel 215 is a channel for the circulation of a coolant, such as cooling water or cooling oil, and the coolant may circulate through the cooling channel 215 in order to maintain the temperature of the susceptor 1000 at a constant level during the semiconductor process.

[0040] On the other hand, a joint portion 350 between the lower plate 210 and the upper plate 220 is formed between the cooling channels 215. The joint portion 350 between the lower plate 210 and the upper plate 220, that is, the joint portion 350 on the upper end surface of the base material of the lower plate 210 excluding the groove portion 211, includes a first activated metal layer 321 laminated on the upper plate 220, a second activated metal layer 311 laminated on the lower plate 210, and a brazing joint layer 325 between the first activated metal layer 321 and the second activated metal layer 311. As described above, the brazing bond layer 325 is formed by inserting a brazing filler layer 323 between the first aluminum layer 322 on the first active metal layer 321 of the upper plate 220 and the second aluminum layer 312 on the second active metal layer 311 of the lower plate 210, which were formed before brazing (Figures 2A and 2B), and then transforming the brazing filler layer 323, the first aluminum layer 322, and the second aluminum layer 312 by heat treatment.

[0041] <Example 1>

[0042] Table 1 below shows the results of fabricating the base body 1100 with respect to the presence or absence of He gas and cooling water leakage, depending on the surface treatment conditions of the joint 350, i.e., whether or not the active metal layers 311, 321 and aluminum (Al) layers 312, 322 were applied (applied: O, not applied: X), when using an MMC material lower plate 210 and upper plate 220 and applying an Al-based metal filler to the brazing filler layer 323.

[0043] [Table 1]

[0044] As shown in [Table 1] above, when neither the activated metal layers 311, 321 nor the aluminum (Al) layers 312, 322 were applied, and when the activated metal layers 311, 321 were applied but the aluminum (Al) layers 312, 322 were not applied, defects such as cooling water leakage and He gas leakage at the joint exceeding the He gas leakage standard of 1.0E-04 (mbar*l / s) were confirmed. However, when the lower plate 210 and upper plate 220 of MMC material were used as in the present invention, and both the activated metal layers 311, 321 and the aluminum (Al) layers 312, 322 were applied as surface treatment conditions for the joint 350 and brazing was performed, it was confirmed that the joint 350 was excellent, there was no cooling water leakage, and gas leakage was improved to a slight level below the He gas leakage standard of 1.0E-04 (mbar*l / s).

[0045] Table 2 below shows the results of a comparison of defect rates of base bodies 1100 manufactured using MMC material bottom plate 210 and top plate 220, with Al-based metal filler applied to the brazing filler layer 323, depending on the surface treatment conditions of the joint 350, i.e., whether or not the active metal layers 311, 321 and aluminum (Al) layers 312, 322 were applied (applied: O, not applied: X).

[0046] [Table 2]

[0047] As shown in [Table 2] above, when neither the activated metal layers 311, 321 nor the aluminum (Al) layers 312, 322 were applied, and when the activated metal layers 311, 321 were applied but the aluminum (Al) layers 312, 322 were not applied, the defect rate for cooling water leakage and He gas leakage at joints exceeding the He gas leakage standard of 1.0E-04 (mbar*l / s) averaged 77%.

[0048] However, as in the present invention, when a lower plate 210 and an upper plate 220 made of MMC material are used, and both the activated metal layer 311, 321 and the aluminum (Al) layer 312, 322 are applied as surface treatment conditions for the joint 350 and brazing is performed, the joint 350 is well bonded and the defect rate is zero.

[0049] <Example 2>

[0050] Figure 6 is an example of an SEM image of a cross-section of a joint 350 formed on the base body 1100 of a susceptor 1000 according to one embodiment of the present invention.

[0051] Referring to Figure 6, the SEM (Scanning Electron Microscope) image (magnified X2000) of the cross-section of the joint 350 confirms that the joint 350, including the first active metal layer 321, the second active metal layer 311, and the brazing joint layer 325, firmly and stably braze-bonds the lower plate 210 and the upper plate 220 of the MMC material.

[0052] Here, an Al-Si metal filler was formed as a brazing filler layer 323 to a thickness of 48 μm to 51 μm, and the brazing joint was performed. The diameter size of the Al crystal grains observed from the cross-section of the joint 350, particularly the brazing joint layer 325, was approximately 0 μm to 60 μm. In particular, the proportion of Al crystal grains with a diameter size of 0 μm to 6 μm was high at 51 to 92%, while the proportion of Al crystal grains with a diameter size of 6 to 60 μm was lower at 8 to 42%. This indicates that the brazing joint layer 325 of the joint 350 firmly and stably brazed the lower plate 210 and the upper plate 220.

[0053] <Further Examples and Comparative Examples>

[0054] Table 3 below shows examples (2 μm to 8 μm) and comparative examples (0.5 μm to 5 μm) of aluminum (Al) layers 312 and 322, as well as the thickness of the brazing filler layer 323 applied thereto (5 μm to 35 μm), when the base body 1100 of the susceptor 1000 is fabricated using the lower plate 210 and upper plate 220 of MMC material. In particular, for each of Examples 1 to 6 in Table 3, Figures 7A to 7F show SEM images (upper images) of Al crystal particles in the brazing bonding layer 325 of the joint 350 of the base body 1100 and size distribution graphs of Al crystal particles (lower bar graphs). In Figures 7A to 7F, the SEM image (upper image) shows Al crystal particles between the upper plate 220 on the left and the lower plate 210 on the right, and the size distribution graphs of Al crystal particles (lower bar graphs) show the number of Al crystal particles for each Al crystal particle size. In the same figure, the particle sizes of Al crystal particles by class can be found in [Table 4].

[0055] [Table 3]

[0056] [Table 4]

[0057] The manufacturing results, including the Al crystal grain size in the brazing bonding layer 325 of the joint 350 of the base body 1100 manufactured under these manufacturing conditions, the degree of adhesion between the lower plate 210 and the upper plate 220, and the presence or absence of defects, are summarized in [Table 5] below.

[0058] [Table 5]

[0059] As shown in [Table 3] and [Table 5] above, Comparative Examples 1 and 2 showed no significant difference in the ratio of Al crystal grains with diameter sizes of 0 μm to 6 μm and those with diameter sizes of 6 μm to 60 μm, and were found to have similar values. It was also confirmed that in such cases where the thickness of the Al layer is small, bonding occurs to some extent, but defects (e.g., cracks, voids, open pores, unbonded sections, etc.) are detected. Furthermore, Comparative Examples 3 and 4 showed that the ratio of Al crystal grains with diameter sizes of 6 μm to 60 μm was significantly lower than the ratio of those with diameters of 0 to 6 μm, and it was confirmed that bonding does not occur in such cases where the brazing filler layer 323 is 5% or less. On the other hand, in Examples 1 to 6 of the present invention, excellent adhesion was observed, no defects were detected, the proportion of Al crystal particles with a diameter size of 0 μm to 6 μm was high at 51% to 92%, and the proportion of Al crystal particles with a diameter size of 6 μm to 60 μm was lower at 8% to 42%. This confirmed that the present invention can provide the optimal base body 1100.

[0060] In particular, in the brazing bonding layer 325 of the joint portion 350 of the base body 1100 of the present invention, excellent bonding performance was observed when the proportion of Al crystal particles with a diameter size greater than 0 μm and less than 6 μm was greater than the proportion of Al crystal particles with a diameter size of 6 μm or more and less than 60 μm. Furthermore, it was observed that in the central region of the brazing bonding layer 325 (the central region between the upper plate and the lower plate), the diameter size of the Al crystal particles in the brazing bonding layer 325 was 6 μm or more and less than 35 μm, and in the boundary region between the first active metal layer 321 of the upper plate 220 and the second active metal layer 311 of the lower plate 210, the diameter size of the Al crystal particles in the brazing bonding layer 325 was greater than 0.0 μm and less than 6 μm. In addition, Al crystal particles with a diameter size of 0 μm to 6 μm are distributed more abundantly in the boundary region than in the central region.

[0061] According to the susceptor 1000 and its manufacturing method according to the present invention, by applying a multilayer (active metal layer and aluminum layer) surface treatment between each plate of the upper plate 220 and lower plate 210 of the base body and the brazing filler, the bonding strength between the upper plate 220 and lower plate 210 of the MMC material base body 1100 can be improved. This reduces the leak rate of He gas and other gases during the process in the semiconductor equipment, improves the vacuum level, reduces leakage of the coolant in the cooling channel, and thereby contributes to maintaining a stable process and improving yield. In the example, it was confirmed that the He gas leak rate was reduced from the conventional 1.0E-03 (mbar*l / s) to the improved level of 2.0E-08 (mbar*l / s).

[0062] Although the present invention has been described above using specific details such as concrete components, and limited embodiments and drawings, these are provided only to aid in a more general understanding of the invention. The present invention is not limited to the embodiments described above, and various modifications and variations are possible for those with ordinary skill in the art to which the invention pertains, as long as they do not deviate from the essential characteristics of the invention. Therefore, the idea of ​​the present invention should not be limited to the embodiments described above, and any technical idea that is equivalent to or comparable to the claims described below should be interpreted as being included within the scope of the rights of the present invention. [Explanation of symbols]

[0063] 220 Top plate 321 1st active metal layer 322 First Aluminum Layer 323 Brazing filler layer 210 Lower plate 215 Cooling channel 211 Groove 311 Second active metal layer 312 Second Aluminum Layer 325 Brazing bond layer 350 Joint 1100 Base Body 1200 Insulation Plate

Claims

1. A method for manufacturing the base body of a susceptor, The base body includes a lower plate and an upper plate, each made of MMC material, and a joint between them. The steps include sequentially laminating a first activated metal layer and a first aluminum layer onto the joint surface of the upper plate, The steps include sequentially laminating a second activated metal layer and a second aluminum layer onto the joint surface of the lower plate, The steps include interposing a brazing filler layer between the first aluminum layer of the upper plate and the second aluminum layer of the lower plate, and converting the brazing filler layer, the first aluminum layer, and the second aluminum layer into a brazing bond layer by heat treatment to braze-bond the lower plate and the upper plate, A method for manufacturing a susceptor base body that includes [a specific component].

2. A method for manufacturing a susceptor base body according to claim 1, comprising a groove between the joint surfaces of the lower plate.

3. A method for manufacturing a susceptor base body according to claim 1, wherein the first active metal layer and the second active metal layer contain one or more of Ti, Zr, Nb, Hf, or Ta.

4. The method for manufacturing a susceptor base body according to claim 1, wherein the thickness of the first active metal layer and the second active metal layer is 1 μm to 5 μm.

5. The method for manufacturing a susceptor base body according to claim 1, wherein the thickness of the first aluminum layer and the second aluminum layer is 5 μm to 10 μm.

6. The method for manufacturing a susceptor base body according to claim 1, wherein the ratio of Al crystal particles in the brazing bonding layer having a diameter size greater than 0 μm and less than 6 μm is greater than the ratio of Al crystal particles having a diameter size of 6 μm or more and less than 60 μm.

7. The method for manufacturing a susceptor base body according to claim 1, wherein the Al crystal particles of the brazing bonding layer, having a diameter size greater than 0 μm and less than 6 μm, are more abundantly distributed in the boundary region between the first active metal layer and the second active metal layer compared to the central region of the brazing bonding layer.

8. The diameter size of the Al crystal grains in the central region of the brazing bonded layer is 6 μm or more and less than 60 μm. A method for manufacturing a susceptor base body according to claim 1, wherein the diameter size of the Al crystal grains in the brazing bonding layer in the boundary region with the first aluminum layer of the upper plate or the second aluminum layer of the lower plate is greater than 0.0 μm and less than 6 μm.

9. A susceptor including a base body and an insulating plate, The base body includes a lower plate and an upper plate, each made of MMC material, and a joint between them. The aforementioned joint is The first activated metal layer on the upper plate side, the second activated metal layer on the lower plate side, The brazing bond layer between the first active metal layer and the second active metal layer is included, The brazing bonding layer is The bonding layer is formed by the transformation of the first aluminum layer on the first active metal layer, the second aluminum layer on the second active metal layer, and the brazing filler layer interposed between the first aluminum layer and the second aluminum layer through heat treatment. A susceptor in which the proportion of Al crystal grains in the brazing bonding layer with a diameter size greater than 0 μm and less than 6 μm is greater than the proportion of Al crystal grains with a diameter size of 6 μm or more and less than 60 μm.

10. The susceptor according to claim 9, wherein the joint is formed between the cooling channels of the base body.

11. The susceptor according to claim 9, wherein the first active metal layer and the second active metal layer contain one or more of Ti, Zr, Nb, Hf, or Ta.

12. The susceptor according to claim 9, wherein the thickness of the first active metal layer and the second active metal layer is 1 μm to 5 μm.

13. The susceptor according to claim 9, wherein the thickness of the first aluminum layer and the second aluminum layer is 5 μm to 10 μm.

14. The susceptor according to claim 9, wherein the Al crystal particles of the brazing bonding layer, whose diameter size is greater than 0 μm and less than 6 μm, are more abundantly distributed in the boundary region between the first active metal layer and the second active metal layer than in the central region of the brazing bonding layer.

15. The diameter size of the Al crystal grains in the central region of the brazing bonded layer is 6 μm or more and less than 60 μm. The susceptor according to claim 9, wherein the diameter size of the Al crystal grains in the brazing bonding layer in the boundary region with the first aluminum layer of the upper plate or the second aluminum layer of the lower plate is greater than 0.0 μm and less than 6 μm.

Images