Sealing system for high-temperature reaction chamber

Abstract

A reaction chamber may include a susceptor configured to support a substrate disposed in a reaction chamber volume, an upper chamber space above the susceptor, a lower chamber space below the susceptor, and / or a sealing system. The sealing system may at least partially fluidly separate the upper chamber space and the lower chamber space. The sealing system may include a spacer plate surrounding the base and / or a flexible diaphragm coupled to the base. The sealing system may be configured to form an at least partial seal between the spacer plate and the extension plate, and to cause at least partial fluid separation between the upper chamber space and the lower chamber space by causing bending of the flexible diaphragm such that the bent portion of the flexible diaphragm is at least partially in contact with the spacer plate.

Description

Technical Field

[0001] This disclosure generally relates to semiconductor processing or reactor systems. In particular, this disclosure relates to reactor systems and components included therein that allow for sealing between an upper and lower volume within a reaction chamber. Background Technology

[0002] Reaction chambers can be used for a variety of processes during the formation of electronic devices on semiconductor substrates. For example, reaction chambers can be used to deposit various material layers onto semiconductor substrates, etch materials, and / or clean surfaces.

[0003] The reaction chamber may include, for example, two spaces or volumes separated by a base. The two spaces may include an upper chamber space above the base and / or a lower chamber space below the base. The lower chamber space may be vertically disposed below the upper chamber space, while the upper chamber space may be vertically disposed above the base. Processing operations on one or more substrates may occur in the upper reaction space, and during operation, contaminants may undesirably transfer from one chamber space to the other. For example, contaminants may undesirably transfer from the upper chamber space to the lower chamber space. Furthermore, if the lower chamber space is sealed and isolated from the upper chamber space, the overall volume of the space where substrate processing operations occur can be reduced, thus allowing the use of less material during the formation of electronic devices on the substrate. Therefore, systems and methods may be needed to provide a seal between the two spaces within the reaction chamber (e.g., to at least partially fluidly separate the two chambers). Summary of the Invention

[0004] This summary is provided to present the chosen concepts in a simplified form. These concepts are further described in detail in the following detailed description of exemplary embodiments of this disclosure. This summary is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0005] The reactor system disclosed herein can facilitate at least partial sealing between two spaces, chambers, or volumes within a reactor system's reaction chamber. In various embodiments, the reactor system may include a reaction chamber, wherein one of the two spaces within the reaction chamber is in fluid communication with the other space. The reaction chamber may include: a base configured to support a substrate disposed within the reaction chamber and to translate upward and downward within the reaction chamber; an upper chamber space located within the reaction chamber and above the base; a lower chamber space located within the reaction chamber and below the base; and a sealing system comprising: a spacer plate surrounding the base; and a flexible diaphragm coupled to the base. The sealing system may be configured to cause at least partial fluid separation between the upper and lower chamber spaces by bending a portion of the flexible diaphragm, and the bent portion of the flexible diaphragm may at least partially contact the spacer plate.

[0006] In various embodiments, the sealing system may also include an electromagnetic source coupled to the spacer plate. The sealing system may be configured to induce bending of the flexible diaphragm by moving the base upward within the reaction chamber, bringing the upper-facing surface of the flexible diaphragm close to the lower-facing surface of the spacer plate, and activating the electromagnetic source to expose the flexible diaphragm to an electromagnetic or magnetic field.

[0007] In various embodiments, the sealing system may further include a stop ring attached to the lower surface of the spacer plate. The stop ring may be configured to prevent particle deposition on the flexible diaphragm when a curved portion of the flexible diaphragm contacts the spacer plate.

[0008] In various embodiments, the sealing system may further include an extension plate attached to the base, and a flexible diaphragm may be attached to the upper-facing surface of the extension plate. In various embodiments, the sealing system may be configured to move the base upward within the reaction chamber until the upper-facing surface of the extension plate contacts the stop ring.

[0009] In various embodiments, the downward-facing surface of the spacer plate may include a recessed portion, and the curved portion of the flexible diaphragm may contact the recessed portion of the spacer plate.

[0010] In various embodiments, the sealing system can also be configured to induce fluid communication between the upper and lower chamber spaces by disabling the electromagnetic source and moving the base downward within the reaction chamber.

[0011] In various embodiments, the extension plate may comprise a non-magnetic metal or a non-magnetic metal alloy. In various embodiments, the flexible diaphragm may comprise a magnetic metal or a magnetic metal alloy. In various embodiments, the spacer plate may comprise a ceramic material. In various embodiments, the reaction chamber may be configured to process the substrate at a temperature below 600°C.

[0012] In various embodiments, a method may include: translating a base in a reaction chamber upward from a first position to a second position, wherein the reaction chamber may include an upper chamber space above the base and a lower chamber space below the base; inducing at least partial fluid separation between the upper and lower chamber spaces by: activating an electromagnetic source to expose a flexible diaphragm coupled to the base to an electromagnetic field; and inducing bending of the flexible diaphragm based on the electromagnetic field such that the bent portion of the flexible diaphragm at least partially contacts a spacer plate surrounding the base; and maintaining partial fluid separation between the upper and lower chamber spaces during substrate processing within the upper chamber space.

[0013] In various embodiments, the flexible diaphragm may be attached to the upper surface of the extension plate. Translating the base to the second position may include bringing the upper surface of the extension plate attached to the base into contact with a stop ring coupled to the lower surface of the spacer plate.

[0014] In various embodiments, the downward-facing surface of the spacer plate may include a recessed portion, and the curved portion of the flexible diaphragm may contact the recessed portion of the spacer plate.

[0015] In various embodiments, the method may further include, after processing the substrate, disabling the electromagnetic source and translating the base downward from the second position to the third position.

[0016] For the purpose of outlining this disclosure and its advantages relative to prior art implementations, certain objects and advantages of this disclosure have been described above. It should be understood, of course, that not all such objects or advantages may be achieved according to any particular embodiment of this disclosure. Therefore, for example, those skilled in the art will recognize that the embodiments disclosed herein may be performed in a manner that achieves or optimizes one or more advantages taught or suggested herein, without necessarily achieving other objects or advantages that may be taught or suggested herein.

[0017] All these embodiments are intended to fall within the scope of this disclosure. These and other embodiments will become apparent to those skilled in the art from the following detailed description of certain embodiments with reference to the accompanying drawings, and this disclosure is not limited to any particular embodiment discussed. Attached Figure Description

[0018] Although this specification concludes with claims that are specifically pointed out and clearly claimed as embodiments of this disclosure, the advantages of embodiments of this disclosure can be more readily determined from the description of certain examples of embodiments when read in conjunction with the accompanying drawings. Elements having the same element numbers in all the drawings are intended to be identical.

[0019] Figure 1 This is a schematic diagram of an exemplary reactor system according to various embodiments.

[0020] Figure 2A This is a schematic diagram of an exemplary reaction chamber having a base positioned at a lower location, according to various embodiments.

[0021] Figure 2B This is a schematic diagram of an exemplary reaction chamber having a base positioned in an elevated position, according to various embodiments.

[0022] Figure 3A , Figure 3B and Figure 3C Exemplary bases according to various embodiments are shown.

[0023] Figure 4A and Figure 4B Exemplary spacer plates for providing a seal in a reaction chamber are shown according to various embodiments.

[0024] Figure 5Methods for maintaining a seal within a reaction chamber are illustrated according to various embodiments.

[0025] Figure 6 , Figure 7 , Figure 8 and Figure 9 A schematic diagram of a portion of a reaction chamber according to various embodiments is shown.

[0026] It should be understood that the elements in the accompanying drawings are shown for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some elements in the drawings may be exaggerated relative to other elements to help improve the understanding of the embodiments illustrated in this disclosure. Detailed Implementation

[0027] Although certain embodiments and examples are disclosed below, those skilled in the art will understand that the invention extends beyond the specific disclosed embodiments and / or uses of the invention and their obvious modifications and equivalents. Therefore, it is intended that the scope of the disclosed invention should not be limited to the specific disclosed embodiments described below.

[0028] The illustrations presented herein are not intended to be actual views of any particular material, device, structure, or equipment, but are merely representations for illustrating embodiments of this disclosure.

[0029] As used herein, the term “substrate” can refer to any one or more underlying materials, including any one or more underlying materials that can be modified or on which devices, circuits or films can be formed.

[0030] As used herein, the term "atomic layer deposition" (ALD) can refer to a vapor-phase deposition process in which deposition cycles, preferably multiple consecutive cycles, are performed in a processing chamber. Typically, during each cycle, a precursor is chemisorbed onto the deposition surface (e.g., a substrate surface or a previously deposited lower layer surface, such as material from a previous ALD cycle), forming a monolayer or sub-monolayer that is not readily reactive with other precursors (e.g., a self-limiting reaction). Subsequently, if desired, a reactant (e.g., another precursor or a reactive gas) can be introduced into the processing chamber to convert the chemisorbed precursor into the desired material on the deposition surface. Typically, this reactant is capable of further reacting with the precursor. Furthermore, a purging step can be utilized during each cycle to remove excess precursor from the processing chamber and / or excess reactant and / or reaction byproducts after the conversion of the chemisorbed precursor. Furthermore, as used herein, the term “atomic layer deposition” also means processes specified by related terms such as “chemical vapor deposition,” “atomic layer epitaxy” (ALE), molecular beam epitaxy (MBE), gas source MBE or organometallic MBE, and chemical beam epitaxy when performed with alternating pulses of precursor composition, reactive gas, and purge gas (e.g., inert carrier gas).

[0031] As used herein, the term “chemical vapor deposition” can refer to any process in which a substrate is exposed to one or more volatile precursors that react and / or decompose on the substrate surface to produce the desired deposition.

[0032] As used herein, the terms “membrane” and “thin film” can refer to any continuous or discontinuous structure and material deposited by the methods disclosed herein. For example, “membrane” and “thin film” can include 2D materials, nanorods, nanotubes, or nanoparticles, or even partial or complete molecular layers, partial or complete atomic layers, or atomic and / or molecular clusters. “Membrane” and “thin film” can include materials or layers with pinholes, but still at least partially continuous.

[0033] As used herein, the term "contaminant" can refer to any unwanted material disposed within the reaction chamber that can affect the purity of the substrate disposed within the reaction chamber. The term "contaminant" can refer to, but is not limited to, unwanted deposits, metallic and non-metallic particles, impurities, and waste disposed within the reactor system or reaction chamber or any part thereof.

[0034] Reactor systems for ALD, CVD, etc., can be used in a variety of applications, including depositing and etching materials on substrate surfaces. In various embodiments, references are made to... Figure 1 The reactor system 50 may include a reaction chamber 4, a base 6 for holding a substrate 30 during processing, a fluid distribution system 8 (e.g., a spray nozzle) for dispensing one or more reactants onto the surface of the substrate 30, and one or more reactant sources 10, 12 and / or carrier gas and / or purge gas sources 14, which are fluidly coupled to the reaction chamber 4 via lines 16, 18 and 20 and / or valves or controllers 22, 24 and 26. The reactor system 50 may also include a vacuum source / pump 28 fluidly coupled to the reaction chamber 4. One or more sealing systems 29 may separate (e.g., at least partially fluidly separate) portions of the volume within the reaction chamber 4.

[0035] at the same time Figure 1 The sealing system 29 is illustrated in a vertical furnace (e.g., reactor system 50) housing a single substrate (e.g., substrate 30) that is substantially horizontally oriented. The sealing system described herein can also be implemented in vertical batch furnaces housing multiple substrates, diffusion furnaces, horizontal furnaces with wafers vertically oriented, and / or other furnaces for processing semiconductor substrates.

[0036] Go to Figure 2A and Figure 2BEmbodiments of this disclosure may include reactor systems and methods that can be used to process substrates within reactor 100. In various embodiments, reactor 100 may include a reaction chamber 110 for processing substrates. In various embodiments, reaction chamber 110 may include an upper chamber space 112 (which may be configured to process one or more substrates) and / or a lower chamber space 114. Lower chamber space 114 may be configured to load and unload substrates from and / or to provide a pressure differential between lower chamber space 114 and upper chamber space 112.

[0037] The lower chamber 114 can be connected to a vacuum source 198 (e.g., a vacuum pump). When the vacuum source 198 is activated, it can provide a vacuum pressure, causing gas to flow from the vacuum source 198 to the lower chamber 114. When the vacuum source 198 is deactivated, gas can flow from the lower chamber 114 to the vacuum source 198.

[0038] In various embodiments, reactor 100 may be configured to process the substrate at temperatures below 800°C. In various embodiments, reactor 100 may be configured to process the substrate at temperatures below 600°C. In various embodiments, reactor 100 may be configured to process the substrate at temperatures below 550°C.

[0039] In various embodiments, substrate 150 and base 130 may be movable relative to each other. For example, in various embodiments, lifting pin 139 may be configured to allow substrate 150 to separate from base 130 and / or allow substrate 150 to be positioned in contact with (i.e. supported by) base 130. In various embodiments, base 130 may be moved up or down, for example via base lift 104, such that substrate 150 moves together with base 130. In various embodiments, lifting pin 139 may be moved up or down, for example via lifting pin lift / platform 202. In various embodiments, one of base 130 and lifting pin 139 may be stationary while the other is movable.

[0040] In various embodiments, the base 130 can be moved from the loading position 103 to the processing position 106, such as... Figure 2B As shown, the substrate 150 is thus moved into the upper chamber space 112. The substrate 150 can then be processed within the upper chamber space 112. Fluids (e.g., precursors, reactant gases, carrier gases, etc.) can flow into the upper chamber space 112 through a fluid distribution system 190 (e.g., a spray nozzle) to contact the substrate 150. The volume of the upper chamber space 112 within the reaction chamber 110 can be surrounded at least by the fluid distribution system 190, the base 130, the spacer plate 160, the extension plate 170, and / or the flexible diaphragm 180.

[0041] An extension plate 170 may be disposed around the base 130. The extension plate 170 may be annular and / or attached to the base 130. The extension plate 170 may have an inner periphery whose diameter is larger than the diameter of the substrate support region on the base 130. The base 130 may have an annular lip on its top surface outside the substrate support region, and the extension plate 170 may be disposed on the top surface outside the lip. Alternatively, the base 130 may not have an annular lip on its top surface outside the substrate support region, and the extension plate 170 may be disposed on the top surface outside the substrate support region.

[0042] The base 130 may include a top plate (not shown) and a heating block (not shown), the top plate being placed on the heating block. An extension plate 170 may be annular and located between the top plate and the heating block. The extension plate 170 may be attached to a side of the heating block. The extension plate 170 may have an annular portion and an annular peripheral portion extending from the base 130. The annular portion may be attached to a side of the heating block. The annular peripheral portion may include an upper surface 171 and a lower surface 172. A flexible diaphragm 180 may be partially attached to the upper surface 171 of the extension plate 170. The flexible diaphragm 180 may be annular.

[0043] Figure 3A A top view of the example base 302 (e.g., base 130) facing the upper surface is shown, while Figure 3B and 3C An example cross-sectional view of extension plate 304 is shown. Base 302 may support substrate 308 (e.g., substrate 150). An annular extension plate 304 (e.g., extension plate 170) may surround, contact and / or attach to the periphery of base 302.

[0044] A flexible diaphragm 306 (e.g., flexible diaphragm 180) may be disposed on the upper-facing surface of the extension plate 304. The flexible diaphragm 306 may be annular and / or may include an inner peripheral edge 312A and an outer peripheral edge 312B. In various embodiments, the extension plate 304 may have a first perimeter C1, the outer peripheral edge 312B of the flexible diaphragm 306 may have a second perimeter C2, the inner peripheral edge 312A of the flexible diaphragm 306 may have a third perimeter C3, and the base 302 may have a fourth perimeter C4. The second perimeter C2 may be less than the first perimeter C1 and greater than the third perimeter C3. The third perimeter C3 may be less than the second perimeter C2 and greater than the fourth perimeter C4. The first perimeter C1 may be greater than the second perimeter C2, the third perimeter C3, and the fourth perimeter C4. The width “a” of the flexible diaphragm 306 may be in the range of 10 to 30 nanometers.

[0045] The inner peripheral edge 312A and outer peripheral edge 312B of the flexible diaphragm 306 can be attached to the extension plate 304. Although the portion of the flexible diaphragm 306 between the inner peripheral edge 312A and the outer peripheral edge 312B can separate from the extension plate 304 when the flexible diaphragm 306 is exposed to an electromagnetic field, the inner peripheral edge 312A and the outer peripheral edge 312B can remain attached to the extension plate 304.

[0046] The extension plate 304 may comprise materials such as quartz, ceramic, or metals (e.g., titanium, aluminum, or Hastelloy). The flexible diaphragm 306 may comprise a soft magnetic metal or a soft magnetic metal alloy. The soft magnetic metal or metal alloy may be a material that can be easily magnetized when exposed to an electromagnetic or magnetic field. Additionally, the soft magnetic metal or metal alloy may be easily demagnetized when the electromagnetic or magnetic field is removed. Examples of soft magnetic metals or metal alloys may include steel, nickel-iron alloys, silicon-iron alloys, iron, iron-cobalt alloys, ferritic stainless steel, iron-nickel, soft ferrite, etc. Alternatively, the flexible diaphragm 306 may comprise a hard magnetic metal or a hard magnetic metal alloy. The hard magnetic metal or metal alloy may be a material that can remain magnetized even in the absence of an electromagnetic or magnetic field.

[0047] In various embodiments, when the flexible diaphragm 306 is not exposed to an electromagnetic or magnetic field, and as... Figure 3B As shown, the intermediate portion of the flexible diaphragm 306 between its inner peripheral edge 312A and outer peripheral edge 312B can contact the upward-facing surface of the extension plate 304. Alternatively, in the absence of an electromagnetic or magnetic field and as... Figure 3C As shown, the middle portion of the flexible diaphragm 306 can be raised relative to the inner peripheral edge 312A and the outer peripheral edge 312B.

[0048] Return to reference Figure 2A and Figure 2B When the base 130 is raised or lowered within the reaction chamber, the extension plate 170 can move together with the base. When the base 130 is raised to the processing position 106, a portion of the upward surface of the extension plate 170 and / or a portion of the flexible diaphragm 180 can contact the spacer plate 160 of the reactor 100.

[0049] In various embodiments, at least a portion of the spacer plate 160 may project from the chamber sidewall into the reaction chamber. The spacer plate 160 may be positioned below the fluid distribution system 190. In various embodiments, the spacer plate 160 may surround a base in the reaction chamber 110. The spacer plate 160 may be coupled to the extension plate 170 when the base 130 is moved into or positioned in a processing position (e.g., an elevated position). For example, the lower-facing surface of the spacer plate 160 may be coupled to and / or contact the upper-facing surface of the flexible diaphragm 180 or the extension plate 170. The spacer plate 160 may be coupled to an electromagnetic source 165 (e.g., an electromagnetic coil). The electromagnetic source 165 may generate an electromagnetic or magnetic field when activated, and the flexible diaphragm 180 may be exposed to the electromagnetic or magnetic field generated by the electromagnetic source 165.

[0050] Figure 4A A top view of the lower surface of an example spacer plate 400 (e.g., spacer plate 160) is shown, while Figure 4B A cross-sectional view of spacer plate 400 is shown. Spacer plate 400 may include an opening 402 that allows fluid from fluid distribution system 190 to enter upper chamber space 112. Spacer plate 400 may also include a stop ring 406 and / or a recess 404. Stop ring 406 may be configured to prevent particle deposition on flexible diaphragm 180 when the substrate is processed in upper chamber space 112. Electromagnetic source 408 (e.g., electromagnetic source 165) may be disposed above recess 404.

[0051] The width "a" of the recessed portion 404 can range from 10 to 30 nanometers. Although Figure 4B A recessed portion 404 with a semi-elliptical shape is shown, but the recessed portion 404 can also be semi-circular, bell-shaped, rectangular, triangular, trapezoidal, etc. Similarly, although Figure 4B A stop ring 406 with a circular cross-section is shown, but the stop ring 406 may also have a square cross-section, a triangular cross-section, an elliptical cross-section, a rectangular cross-section, a trapezoidal cross-section, etc. In various embodiments, the perimeter of the recess 404 may be greater than the perimeter of the stop ring 406 and / or the perimeter of the opening 402. In various embodiments, the perimeter of the stop ring 406 may be greater than the perimeter of the opening 402 and / or may be smaller than the perimeter of the recess 404. The spacer plate 400 and / or the stop ring 406 may comprise materials such as quartz, ceramic, or metal (e.g., titanium, aluminum, stainless steel, or Hastelloy).

[0052] Return to reference Figure 2A and 2BIn various embodiments, to create separation between the upper chamber space 112 and the lower chamber space 114, the reaction chamber 110 may include a sealing system disposed between the base 130, the chamber sidewalls of the reaction chamber, and / or the fluid distribution system 190. For example, the sealing system in the reaction chamber 110 may include an extension plate 170 attached to the base 130, a flexible diaphragm 180 attached to the extension plate 170, a spacer plate 160, a stop ring 406, an electromagnetic source 165, and / or a controller 192 to separate or isolate the upper chamber space 112 and the lower chamber space 114.

[0053] The sealing system in reaction chamber 110 can be configured to control fluid flow within the reaction chamber. Upper chamber space 112 and lower chamber space 114 can be fluidly separated by creating at least a partial seal between a portion of flexible diaphragm 180 and a portion of spacer plate 160. When base 130 is in the raised position 103, a partial seal is created such that the upper-facing surface 171 of extension plate 170 contacts the stop ring 406 of spacer plate 160. When base 130 is in the raised position, electromagnetic source 165 can be activated to generate an electromagnetic or magnetic field. The electromagnetic or magnetic field can cause a portion (e.g., the intermediate portion between inner peripheral edge 312A and outer peripheral edge 312B) to bend, deform, and / or expand, such that the bent, deformed, and / or expanded portion of flexible diaphragm 180 contacts a recessed portion of spacer plate 160 disposed below electromagnetic source 165. Bending, deformation, and / or expansion of the flexible diaphragm 180 can be caused by the attraction of soft or hard magnetic materials in the flexible diaphragm 180 to an electromagnetic or magnetic field generated by the electromagnetic source 165. When the electromagnetic source 165 is deactivated, it can relax the bent, deformed, and / or expanded portions of the flexible diaphragm 180 back to its original shape, thereby releasing the seal. If the flexible diaphragm 180 comprises a soft magnetic metal or metal alloy, the magnetic field generated by the electromagnetic source 165 can magnetize the flexible diaphragm 180. Once the magnetic field is turned off when the electromagnetic source is deactivated, the flexible diaphragm 180, including the soft magnetic metal or metal alloy, can be demagnetized. The controller 192 can control the separation and / or fluid communication between the upper chamber space 112 and the lower chamber space 114 by controlling the activation and / or deactivation of the electromagnetic source 165.

[0054] Separation and / or isolation between the upper chamber space 112 and the lower chamber space 114 may be desirable to prevent or reduce the entry and / or contact of precursor gases and / or other fluids used in the processing of the substrate 150 into and / or with the lower chamber space 114 of the reaction chamber 110. For example, precursor gases used to process the substrate in the reaction space may include corrosive deposition precursors that can contact the lower chamber space 114, generating unwanted deposits / contaminants / particles that can then be reintroduced into the upper chamber space 112, thereby providing a source of contamination to the substrate disposed in the reaction space. Isolation of the upper chamber space 112 from the lower chamber space 114 can also limit the area where plasma is generated. Various other embodiments described herein can also prevent plasma from contacting the sides of the pedestal (e.g., heating blocks), the inner walls of the reactor 100, and other locations where conductive components are exposed, thus resulting in a lower floating potential applied to the processing target. As a result, charging damage and pick-up problems caused by plasma can be reduced.

[0055] During operation, refer to Figure 5 In the method 500 shown, in step 502, a substrate (e.g., substrate 150) may be provided in a reaction chamber (e.g., reaction chamber 110 of reactor 100). When providing the substrate, a base supporting the substrate may be in a first position (e.g., a lower position or a loading position). For example, Figure 6 A base 604 (e.g., base 130) is shown, wherein the upper surface of the base 604 may be in a first position 608 (e.g., a lower position or a loading position). An extension plate 606 (e.g., extension plate 170) may be attached to the base 604, and when the base 604 is in the first position 608, the upper surface 620 of the extension plate 606 is not in contact with the stop ring 616 (e.g., stop ring 406) of the spacer plate 602 (e.g., spacer plates 160, 400). Additionally, a flexible diaphragm 624 (e.g., flexible diaphragm 180) may not be near the recess 614 (e.g., recess 404) of the spacer plate 602. The spacer plate 602 may also include an electromagnetic source 622 (e.g., electromagnetic source 165). When the upper surface of the base 604 is in the first position 608, fluid can flow freely between the upper chamber space 610 (e.g., upper chamber space 112) and the lower chamber space 612 (e.g., lower chamber space 114). Therefore, the flexible diaphragm 624 can be in a relaxed state (e.g., without deformation, bending, or expansion).

[0056] Return to reference Figure 5 In step 504, the base 604 can be translated upward from a first position 608 (e.g., a lower position or a loading position) to a second position (e.g., a raised position or a processing position) such that in step 506, the extension plate attached to the base can contact the stop ring of the spacer plate. For example, as Figure 7As shown, the base 604 can be translated upwards, such that the upper-facing surface of the base 604 is in an elevated or processed position 702. Furthermore, the flexible diaphragm 624 can be brought close to the recessed portion 614 of the spacer plate 602. The processed position 702 of the base 604 can be the position where the base 604 is positioned during substrate processing (e.g., at a desired distance from the top of the reaction chamber or the fluid distribution system). During translation, the upper-facing surface 620 of the extension plate 606 can engage, contact, and / or connect to the stop ring 616 of the spacer plate 602. In step 506, the electromagnetic source 622 is not activated, and therefore, the flexible diaphragm 624 can remain in a relaxed position (e.g., without deformation or expansion).

[0057] exist Figure 5 Step 508 can isolate the upper and lower chamber spaces of the reaction chamber by activating an electromagnetic source connected to the reaction chamber. For example, as Figure 8 As shown, electromagnetic source 622 can be activated to generate an electromagnetic or magnetic field 804. Flexible diaphragm 624 may comprise a soft or hard magnetic material, and exposing the electromagnetic or magnetic field 804 to flexible diaphragm 624 can cause the central portion of flexible diaphragm 624 to bend, deform, and / or extend toward the recessed portion 614 of spacer plate 602. The bent, deformed, and / or expanded portion 802 of flexible diaphragm 624 may contact the downward-facing surface of recessed portion 614 to form a seal between the bent, deformed, and / or expanded portion 802 of flexible diaphragm 624 and the recessed portion 614 of spacer plate 602. Electromagnetic source 622 can be activated when it receives an activation signal from a controller (e.g., controller 192).

[0058] In response to the seal formed between the flexible diaphragm 624 and the spacer plate 602, the upper chamber space 610 can be isolated from the lower chamber space 612. Therefore, the upper chamber space 610 can be at least partially fluidly isolated from the lower chamber space 612.

[0059] exist Figure 6 Step 510 maintains isolation between the upper chamber space 610 and the lower chamber space 612, while processing the substrate from step 502 within the upper chamber space 610. Isolation can be maintained by keeping the electromagnetic source 622 on.

[0060] exist Figure 5 Step 512 can deactivate the electromagnetic source to release the seal between the flexible diaphragm 624 and the spacer plate 602. For example, as Figure 9 As shown, the electromagnetic source 622 can be deactivated, which can cause the flexible diaphragm 624 to bend, deform, and / or expand the portion 802 (e.g., Figure 8 (As shown) it returns to its relaxed state 902 in the absence of an electromagnetic or magnetic field. When a deactivation signal is received from a controller (e.g., controller 192), the electromagnetic source 622 can be deactivated.

[0061] exist Figure 5 In step 514, the base 604 may be translated downward from an elevated position (e.g., elevated position 702) to a lower position (e.g., first position 608 or another lower position). The downward translation of the base allows fluid to flow freely again between the upper chamber space 610 and the lower chamber space 612.

[0062] While exemplary embodiments of this disclosure are set forth herein, it should be understood that this disclosure is not limited thereto. For example, although reactor systems are described in conjunction with various specific configurations, this disclosure is not necessarily limited to these examples. Various modifications, variations, and enhancements may be made to the systems and methods set forth herein without departing from the spirit and scope of this disclosure.

[0063] The illustrations presented herein are not intended to be actual views of any particular material, structure, or device, but are merely idealized representations used to describe embodiments of this disclosure.

[0064] The specific embodiments shown and described are illustrative of the invention and its best mode, and are not intended to limit the scope of aspects and embodiments in any way. In fact, for the sake of brevity, conventional manufacturing, connection, preparation, and other functional aspects of the system may not be described in detail. Furthermore, the connecting lines shown in the figures are intended to represent exemplary functional relationships and / or physical connections between various elements. Many alternative or additional functional relationships or physical connections may exist in the actual system, and / or may not exist in some embodiments.

[0065] It should be understood that the configurations and / or methods described herein are exemplary in nature, and these specific embodiments or examples should not be considered limiting, as many variations are possible. The particular routines or methods described herein may represent one or more of any number of processing strategies. Therefore, the various actions shown may be performed in the order shown, in a different order, or in some cases omitted.

[0066] The subject matter of this disclosure includes all novel and non-obvious combinations and sub-combinations of the various processes, systems and configurations disclosed herein, as well as any and all equivalents thereof.

Claims

1. A reaction chamber, comprising: The base is configured as follows: A substrate is supported within the reaction chamber; and It moves upward and downward within the reaction chamber; The upper chamber space is located within the reaction chamber and above the base; The lower chamber space is located within the reaction chamber and below the base; as well as A sealing system, comprising: Spacer plates surrounding the base; and The flexible diaphragm is connected to the base. The sealing system is configured to cause at least partial fluid separation between the upper chamber space and the lower chamber space by causing the flexible diaphragm to bend so that the bent portion of the flexible diaphragm at least partially contacts the spacer plate.

2. The reaction chamber according to claim 1, wherein, The sealing system also includes an electromagnetic source connected to the spacer plate, and The sealing system is configured to cause the flexible diaphragm to bend in the following manner: The base is moved upward within the reaction chamber; The upper surface of the flexible diaphragm is brought close to the lower surface of the spacer plate; and An electromagnetic source is activated to expose the flexible diaphragm to an electromagnetic field.

3. The reaction chamber according to claim 2, wherein, The sealing system also includes: A stop ring is attached to the downward-facing surface of the spacer plate, wherein the stop ring is configured to prevent particles from depositing on the flexible diaphragm when the curved portion of the flexible diaphragm contacts the spacer plate.

4. The reaction chamber according to claim 3, wherein, The sealing system also includes an extension plate attached to the base; and The flexible diaphragm is attached to the upper surface of the extension plate.

5. The reaction chamber according to claim 4, wherein, The extension plate comprises a non-magnetic metal or a non-magnetic metal alloy.

6. The reaction chamber according to claim 4, wherein, The sealing system is configured to move the base upward within the reaction chamber until the upward-facing surface of the extension plate contacts the stop ring.

7. The reaction chamber according to claim 2, wherein, The sealing system is also configured to induce fluid communication between the upper chamber and the lower chamber in such a way as: Disconnect the electromagnetic source; and The base is moved downward within the reaction chamber.

8. The reaction chamber according to claim 1, wherein, The downward-facing surface of the spacer plate includes a recessed portion; and The curved portion of the flexible diaphragm contacts the recessed portion of the spacer plate.

9. The reaction chamber according to claim 1, wherein, The flexible diaphragm comprises a magnetic metal or a magnetic metal alloy.

10. The reaction chamber according to claim 1, wherein, The spacer plate comprises a ceramic material.

11. The reaction chamber according to claim 1, wherein, The reaction chamber is configured to process the substrate at a temperature below 600°C.

12. A sealing system, comprising: Spacer plates that surround the base in the reaction chamber; A flexible diaphragm is connected to the base; An electromagnetic source, which is connected to the spacer plate; as well as A controller configured to cause at least partial fluid separation between the upper chamber space and the lower chamber space of the reaction chamber in such a way as: An electromagnetic source is activated to expose the flexible diaphragm to an electromagnetic field; and The flexible diaphragm is bent such that the bent portion of the flexible diaphragm is at least partially in contact with the spacer plate.

13. The sealing system according to claim 12, wherein, The sealing system also includes an extension plate attached to the base; and The flexible diaphragm is attached to the upper surface of the extension plate.

14. The sealing system according to claim 13, wherein, The sealing system further includes a stop ring attached to the downward-facing surface of the spacer plate; and The controller is further configured to: Before activating the electromagnetic source, the base is moved upward within the reaction chamber until the upward-facing surface of the extension plate contacts the stop ring.

15. The sealing system according to claim 12, wherein, The downward-facing surface of the spacer plate includes a recessed portion; and The curved portion of the flexible diaphragm contacts the recessed portion of the spacer plate.

16. The sealing system according to claim 12, wherein, The controller is further configured to induce fluid communication between the upper chamber and the lower chamber by disabling the electromagnetic source.

17. A method comprising: The base in the reaction chamber is moved upward from the first position to the second position, wherein the reaction chamber includes an upper chamber space above the base and a lower chamber space below the base; At least partial fluid separation is caused between the upper and lower chambers in the following manner: An electromagnetic source is activated to expose the flexible diaphragm connected to the base to an electromagnetic field; and The flexible diaphragm is bent by an electromagnetic field, such that the bent portion of the flexible diaphragm is at least partially in contact with the spacer plate surrounding the base. as well as During substrate processing in the upper chamber, partial fluid separation between the upper and lower chambers is maintained.

18. The method according to claim 17, wherein, Moving the base to the second position includes bringing the upper surface of the extension plate attached to the base into contact with a stop ring connected to the lower surface of the spacer plate, wherein the flexible diaphragm is attached to the upper surface of the extension plate.

19. The method of claim 17, wherein, The downward-facing surface of the spacer plate includes a recessed portion; and The curved portion of the flexible diaphragm contacts the recessed portion of the spacer plate.

20. The method of claim 17, further comprising: After substrate processing: Disconnect the electromagnetic source; and The base is moved downward from the second position to the third position.

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