Light ray photoelectron spectrometer
By integrating an X-ray source, an ultraviolet light source, and a hemispherical electron energy analyzer, combined with a cryogenic cooling and heating device and a data analysis module, the problems of existing photoelectron spectrometers, such as limited functionality, narrow temperature range, and insufficient sample processing, have been solved. This has enabled multi-mode measurement and wide-temperature sample environment control, improved detection accuracy and automated data processing, and significantly increased experimental efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-11-27
- Publication Date
- 2026-03-27
AI Technical Summary
Existing photoelectron spectrometers have limited functionality, cannot achieve joint measurements of XPS, UPS, and ARPES in the same device, have a narrow temperature range, insufficient sample environment control, limited detection accuracy, and low degree of automation in data processing.
It integrates an X-ray source, an ultraviolet light source, and a hemispherical electron energy analyzer, and is equipped with a cryogenic cooling and heating device to achieve wide temperature range sample environment control from 4K to 1300K. It adopts Jost aberration correction technology to improve energy resolution, and combines an argon ion etching gun and a dual detector assembly with a built-in data analysis module for automated processing.
It achieves multi-mode measurement integration of XPS, UPS, and ARPES, covering a wide temperature range of sample environments, improving detection accuracy and data processing automation, and significantly enhancing experimental efficiency and data consistency.
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Figure CN121740934A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of photoelectron spectroscopy equipment technology, and in particular to a photoelectron spectrometer, specifically a multifunctional photoelectron spectrometer that integrates X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and angle-resolved photoelectron spectroscopy (ARPES) measurement functions, and has the capabilities of wide-temperature range sample environment control, high-resolution detection and sample surface optimization treatment. Background Technology
[0002] Photoelectron spectroscopy is a core method for characterizing the electronic structure of materials, and existing technologies are mainly divided into two categories: X-ray photoelectron spectroscopy (XPS) equipment: It adopts a configuration of "monochromatic X-ray source + hemispherical electron energy analyzer" (refer to Siegfried Hofmann, Auger-and X-Ray Photoelectron Spectroscopy in Materials Science), which can only perform XPS measurements and analyze core state energy level electronic information, and is usually limited to room temperature or liquid nitrogen temperature environment.
[0003] Angle-resolved photoelectron spectroscopy (ARPES) equipment: It adopts a configuration of "monochromatic ultraviolet light source + hemispherical electron energy analyzer" (refer to Rev. Sci. Instrum. 79, 023105 (2008)), which can only perform ARPES measurements and analyze the angle-resolved information of valence electrons, and must be operated at low temperature of liquid nitrogen or liquid helium.
[0004] Existing technological shortcomings: Limited functionality: XPS relies on an X-ray source (high energy, wide excitation range), while ARPES relies on an ultraviolet source (low energy, high monochromaticity). Existing equipment has fixed optical paths for the light source and analyzer, making it impossible to achieve confocal irradiation of both sources within the same vacuum chamber. Combined measurements of XPS, UPS, and ARPES cannot be performed in the same device, requiring equipment or sample replacement, resulting in low experimental efficiency and poor data consistency.
[0005] Narrow temperature range: XPS equipment is mostly at room temperature or liquid nitrogen low temperature, while ARPES equipment requires extremely low temperature. Neither can achieve wide temperature range measurement from extremely low temperature to high temperature.
[0006] Insufficient sample environment control: The lack of an integrated high and low temperature sample manipulation system makes it difficult to study temperature-induced electronic structure evolution.
[0007] Limited energy resolution and detection efficiency: Existing hemispherical electron energy analyzers do not employ targeted aberration correction techniques, and the linear range and spatial resolution of the detection components are insufficient, making it difficult to meet the requirements for high-precision characterization.
[0008] Low level of automation in data processing: The lack of an integrated data analysis module that works in conjunction with hardware makes it impossible to achieve automatic spectral analysis, multi-dimensional data integration, and standardized analysis report output. Summary of the Invention
[0009] In view of this, to address the technical problems of existing technologies such as limited functionality, narrow temperature range, insufficient sample processing capacity, and low measurement accuracy and automation, this invention provides a photoelectron spectrometer that integrates an X-ray source, an ultraviolet light source, and a hemispherical electron energy analyzer. The same device simultaneously supports XPS, UPS, and ARPES measurements, achieving multi-mode measurement integration. Equipped with a cryogenic cooling and heating device, it achieves precise control within the 4K to 1300K range, meeting the environmental requirements for samples over a wide temperature range. In a single experiment, it comprehensively characterizes the sample's core-state energy level electron information, conduction band electron information near the Fermi surface, and electron angular resolution information, significantly improving experimental efficiency.
[0010] To achieve the above objectives, the present invention provides the following technical solution: A photoelectron spectrometer, comprising: A vacuum magnetic shielding cavity is used to provide the required vacuum and magnetic shielding environment for a vacuum sample inside. A hemispherical electron energy analyzer is installed inside the vacuum magnetic shielding cavity. It has a transmission mode and an angle-resolved mode, with the focus aligned with the measurement point of the vacuum sample. A dual-light source system, located within the vacuum magnetic shielding cavity, is equipped with an X-ray source and an ultraviolet light source, which are confocalized at the measurement points of the vacuum sample. A high-low temperature sample manipulation stage, located inside the vacuum magnetic shielding cavity, is used to load the vacuum sample and has a low-temperature refrigeration device and a heating device to meet the requirements of low-temperature and high-temperature measurements; An argon ion etching gun, located inside the vacuum magnetic shielding cavity, is used to clean and deeply analyze the surface of vacuum samples. Its energy range is 200–3000 eV and its beam current can reach 8 μA. A dual-detector assembly, connected to the hemispherical electron energy analyzer, includes a two-dimensional position detector and an electron multiplier detector; The data analysis module is connected to the hemispherical electron energy analyzer and the dual-light source system. It has a built-in XPS spectrum database and functions for automatic peak finding, multi-peak fitting, background subtraction, and elemental valence state and content analysis. It can also export standardized analysis reports.
[0011] Preferably, it further includes: The sample introduction vacuum chamber is separated from the vacuum magnetic shielding chamber by a gate valve; A sample transfer tool is used to deliver the vacuum sample into the vacuum magnetic shielding cavity and fix it on the high and low temperature sample control platform.
[0012] Preferably, the X-ray source and the ultraviolet light source work independently or in combination to excite the core-state electrons and valence band electrons of the vacuum sample, respectively, enabling XPS, UPS, and ARPES measurements to be performed on any sample in a single experiment to obtain the sample's core-state energy level electron information, conduction band electron information near the Fermi surface, and electron angle-resolved information.
[0013] Preferably, the hemispherical electron energy analyzer integrates a Jost aberration correction structure, has an energy resolution ≤0.05eV, and an energy scanning range of 0.1eV to 3500eV.
[0014] Preferably, the vacuum magnetic shielding cavity comprises a stainless steel outer shell and a μ metal liner built into the stainless steel outer shell, and is optimized by magnetic field simulation software to achieve an ultimate vacuum degree ≤ 5 × 10⁻⁶. -10 mbar, the central residual magnetic field of the vacuum magnetic shielding cavity is ≤30mGs.
[0015] Preferably, the excitation energy source of the X-ray source is selected from at least one of the following: (1) Metal target X-ray tube; (2) Synchrotron radiation source; The excitation source of the ultraviolet light source is selected from at least one of the following: (1) Gas plasma light source; (2) Laser source.
[0016] Preferably, the X-ray source is an Al / Ag dual-anode monochromatic X-ray source with a maximum tube voltage of 30kV, a maximum tube current of 10mA, a power of ≥155W, and a beam spot adjustment range of 50~400μm.
[0017] Preferably, the high and low temperature sample manipulation stage has at least 4-axis motion, the cryogenic refrigeration device uses liquid nitrogen or liquid helium to cool to 4K, and the heating device includes a laser and a coupler. The laser has an optimized red light wavelength, which is introduced into the vacuum magnetic shielding cavity through the coupler and irradiates the back of the vacuum sample to achieve non-contact heating to 1300K.
[0018] Preferably, the two-dimensional position detector has ≥1000×1000 channels and a pixel size ≤10μm; the electron multiplier detector has a linear range ≥1×10 9 cps.
[0019] Preferably, the XPS spectral database contains peak positions and RSF sensitivity factor data for multiple elements, and can export standardized analysis reports including spectra, data tables and conclusions. It can also be linked with the dual-light source system and the high-low temperature sample manipulation stage to achieve real-time matching of measurement parameters and analysis results.
[0020] Compared with the prior art, the present invention has the following beneficial effects: Multi-mode measurement and sample processing integration: The hemispherical electron energy analyzer has both transmission mode (XPS / UPS measurement, analyzing electron energy distribution) and angle-resolved mode (ARPES measurement, analyzing electron momentum distribution). The argon ion etching gun performs surface cleaning and deep profiling. The function can be switched without mechanical replacement of parts, which solves the problems of traditional equipment with single function and reliance on external devices for sample pretreatment. It realizes the integration of the whole process of "sample processing-multi-mode measurement-data analysis".
[0021] Dual-light source system: The X-ray source and the ultraviolet light source are confocal to irradiate the vacuum sample measurement point, realizing the in-situ use of XPS (core state electrons), UPS (valence band electrons), and ARPES (angle-resolved band structure). The same device supports XPS, UPS, and ARPES measurements simultaneously, realizing multi-mode measurement integration and avoiding surface contamination or data deviation caused by sample transfer.
[0022] High-resolution and high-stability detection: The hemispherical electron energy analyzer employs Jost aberration correction technology, combined with a dual-detector assembly (a large-channel-count two-dimensional detector + a high-linear-range electron multiplication detector), achieving an energy resolution ≤0.05 eV and a linear range ≥1×10⁻⁶ eV. 9 The detection accuracy is significantly better than that of existing equipment; the stainless steel + μ metal composite structure and magnetic field optimization design of the vacuum magnetic shielding cavity ensure that the residual magnetic field is ≤30mGs, avoiding interference of the magnetic field on the photoelectron trajectory.
[0023] (2) Wide temperature range sample environment: The high and low temperature sample stage supports at least 4-axis motion. The low temperature is cooled to 4K (liquid nitrogen temperature) by liquid nitrogen or liquid helium. The high temperature is achieved by irradiating the back of the vacuum sample with a laser and coupler to achieve non-contact heating to 1300K (about 1000℃), covering an ultra-wide temperature range of 4K to 1300K, which meets the needs of temperature-variable electronic structure research from ultra-low temperature superconductivity to high temperature catalysis. The red light emitted by the laser is introduced through the vacuum coupler to avoid photo-induced damage to the sample surface and ensure measurement stability at high temperatures.
[0024] (3) High-efficiency vacuum and sample handling: The vacuum magnetic shielding cavity and the sample introduction vacuum cavity are isolated by a gate valve. Vacuum samples are transferred in a vacuum environment through a sample transfer tool, avoiding the low measurement efficiency and sample contamination caused by frequent vacuum breaking. The vacuum magnetic shielding cavity integrates magnetic shielding function, reducing the interference of external magnetic fields on photoelectron trajectories and improving the signal-to-noise ratio of ARPES angular resolution data.
[0025] (4) Multifunctional compatibility: The X-ray source supports monochromatic or non-monochromatic switching, and the ultraviolet light source is compatible with gas plasma or laser excitation, adapting to the electronic structure characterization needs of different material systems (such as metals, semiconductors, and insulators). The high and low temperature sample manipulation stage is compatible with 4 or more degrees of freedom of motion (such as θ and φ rotation, X, Y, and Z translation, etc.), enabling three-dimensional scanning of electron momentum space and meeting the fine measurement of complex band structures.
[0026] Automated data analysis and standardized output: Built-in multi-element spectral database and automated analysis algorithms enable automatic peak finding, multi-peak fitting, valence state analysis and report export, solving the problems of cumbersome data processing and poor result consistency of traditional equipment, and improving experimental efficiency.
[0027] In summary, this invention, through the integrated design of a "hemispherical electron energy analyzer + dual light source system + wide temperature range sample stage + graded vacuum system," overcomes the bottlenecks of traditional X-ray photoelectron spectrometers, such as limited functionality, narrow temperature range, and complex sample transfer. It achieves comprehensive characterization of the sample's core-state energy level electronic information, conduction band electronic information near the Fermi surface, and electron angle-resolved information in a single experiment, significantly improving experimental efficiency and providing an integrated solution for the study of material electronic structure. Attached Figure Description
[0028] Figure 1 This is an overall layout diagram of the present invention; In the figure, 1. Vacuum magnetic shielding cavity; 2. Hemispherical electron energy analyzer; 3. X-ray source; 4. Ultraviolet light source; 5. High and low temperature sample handling stage; 6. Vacuum sample; 7. Laser; 8. Coupler; 9. Laser beamline; 10. Sample introduction vacuum cavity; 11. Insertion valve; 12. Sample transfer tool; 13. Argon ion etching gun. Detailed Implementation
[0029] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present invention without creative effort are within the scope of protection of the present invention.
[0030] In the description of this invention, it should be noted that the terms "upper", "lower", "inner", "outer", "top / bottom", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.
[0031] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installed," "equipped with," "sleeved / connected," "connected," etc., should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be a connection within two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.
[0032] like Figure 1 As shown, the present invention provides a photoelectron spectrometer, comprising: The vacuum magnetic shielding cavity 1 provides the necessary vacuum environment (to prevent electron loss due to collisions with gas molecules) and magnetic shielding environment (to reduce interference from external magnetic fields on electron trajectories) for the vacuum sample 6 within it, ensuring the accuracy of photoelectron detection. It provides a stable environmental foundation for multi-source excitation and high-sensitivity analysis. In this invention, the vacuum magnetic shielding cavity includes a stainless steel outer shell (preferably a 316L stainless steel outer shell) and a μ-metal liner built into the stainless steel outer shell. Optimized by magnetic field simulation software, the ultimate vacuum level is ≤5×10⁻⁶. -10 The residual magnetic field at the center of the vacuum magnetic shielding cavity is ≤30 mGs. Through composite structure and magnetic field simulation optimization, an "ultra-high vacuum + low magnetic field" environment is simultaneously achieved, avoiding magnetic field interference with photoelectron trajectories and improving the signal-to-noise ratio of ARPES data.
[0033] A hemispherical electron energy analyzer 2, housed within the vacuum magnetically shielded cavity 1, features both transmission mode (XPS / UPS measurement) and angular resolution mode (ARPES measurement), with the focal point precisely aligned with the measurement point of the vacuum sample 6. In this invention, the hemispherical electron energy analyzer 2 preferably integrates a Jost aberration correction structure, achieving an energy resolution ≤0.05 eV and an energy scanning range of 0.1 eV to 3500 eV. By employing Jost aberration correction technology, the energy resolution is improved from the existing 0.4 eV level to the 0.05 eV level, meeting the requirements for high-precision valence state analysis. Specifically: Transmission modes: Used for XPS measurements to analyze core-state electron binding energy (valence state, composition, content) and for UPS measurements to analyze valence band electronic structure, such as conduction band electron information near the Fermi level.
[0034] Angle-resolved mode: Used for ARPES measurements to obtain electronic angle-resolved information.
[0035] This hemispherical electronic energy analyzer integrates two modes, solving the problem of needing to replace the analyzer or system in traditional equipment. It realizes integrated measurement of "XPS+UPS+ARPES", achieving multi-mode measurement integration and overcoming the functional limitations of traditional single-mode analyzers.
[0036] A dual-light source system, located within the vacuum magnetically shielded cavity 1, comprises an X-ray source 3 and an ultraviolet light source 4. Both sources converge to irradiate the measurement point of the vacuum sample 6, independently or collaboratively exciting core-state electrons and valence band electrons. Both the X-ray source 3 and the ultraviolet light source 4 can be selected to be monochromatic or non-monochromatic.
[0037] In this invention, the excitation energy source of the X-ray source 3 is selected from at least one of the following: (1) Metal target X-ray tube, including Al target and / or Ag target, and may also include other commonly used targets in the art.
[0038] (2) A synchrotron radiation source is electromagnetic radiation generated when high-energy electrons are accelerated in a magnetic field. It has the characteristics of high brightness, high collimation, and wide spectrum (covering the X-ray band). It can be used as an X-ray source 3 for the excitation of photoelectrons in samples. A synchrotron radiation source can provide X-rays with higher energy resolution or a wider energy range, which expands the instrument's ability to analyze complex samples (such as high-energy core state electron excitation). It can be used in conjunction with an ultraviolet light source 4 to achieve multi-functional measurement of "XPS+UPS+ARPES".
[0039] More preferably, X-ray source 3 is an Al / Ag dual-anode monochromatic X-ray source with a maximum tube voltage of 30kV, a maximum tube current of 10mA, a power ≥155W, and a beam spot adjustment range of 50–400μm. The dual-anode design supports multi-element excitation, and the high power (155W) and high stability parameters (intensity fluctuation ≤1%) ensure the repeatability of micro-area measurements, which is superior to existing 72W-level X-ray sources.
[0040] The excitation source of the ultraviolet light source 4 is selected from at least one of the following: (1) A gas plasma source, preferably a helium, argon or krypton gas plasma source.
[0041] (2) Laser source.
[0042] Specifically: X-ray source 3 is used to excite core-state electrons, supporting XPS measurements (analysis of valence state, composition, content, etc.); ultraviolet source 4 is used to excite valence band electrons, supporting UPS (ultraviolet photoelectron spectroscopy) and ARPES (angle-resolved photoelectron spectroscopy) measurements (obtaining conduction band electrons near the Fermi level and angle-resolved information). In a single experiment, by switching between the two light sources, multi-dimensional measurements such as XPS, UPS, and ARPES can be completed sequentially without changing the sample or system, achieving a complete characterization of the sample's electronic structure from core state to valence state to energy band. In summary, the synergistic mechanism of X-ray source 3 and ultraviolet source 4 is as follows: focusing on the same sample site, complementary functions, and switching between them to achieve complete measurements of XPS, UPS, and ARPES.
[0043] X-ray source 3 and ultraviolet light source 4 irradiate the vacuum sample 6 measurement point with a common focal point, realizing the in-situ combined use of XPS (core state electrons), UPS (valence band electrons), and ARPES (angle-resolved band structure). The same device supports XPS, UPS, and ARPES measurements simultaneously, realizing multi-mode measurement integration and avoiding surface contamination or data deviation caused by sample transfer.
[0044] A high-low temperature sample manipulation stage 5, located within the vacuum magnetic shielding cavity 1, is used to load the vacuum sample 6 and enable multi-dimensional movement. It includes a cryogenic cooling device and a heating device to meet both low-temperature and high-temperature measurement requirements. The high-low temperature sample manipulation stage 5 has at least four-axis motion, such as five-axis or six-axis motion, supporting multi-dimensional position adjustment of the vacuum sample 6 and ensuring alignment of the light source and analyzer focus. The cryogenic cooling device preferably uses liquid nitrogen or liquid helium. The heating device includes a laser 7 and a coupler 8. The laser 7 has an optimized red light wavelength, and the laser beam 9 is introduced into the vacuum magnetic shielding cavity 1 through the coupler 8 and irradiates the back of the vacuum sample 6 to achieve heating, avoiding photo-induced damage to the sample surface and ensuring measurement stability at high temperatures.
[0045] The high and low temperature sample stage achieves low-temperature cooling to 4K (liquid nitrogen temperature) via liquid nitrogen or liquid helium, and high-temperature heating to 1300K (approximately 1000℃) by irradiating the back of the vacuum sample 6 with laser 7 and coupler 8. This covers an ultra-wide temperature range of 4K to 1300K, meeting the needs of temperature-variable electronic structure research from ultra-low temperature superconductivity to high temperature catalysis. It breaks through the temperature limitations of traditional equipment (e.g., room temperature, liquid nitrogen cryogenics), supports the study of material electronic properties under extreme temperatures, and is suitable for extreme temperature scenarios such as superconductivity and catalysis.
[0046] Argon ion etching gun 13 is set inside the vacuum magnetic shielding cavity 1. It is used to clean or deeply analyze the surface of vacuum sample 6 by focusing through multi-level lenses and deflecting electrodes, removing the surface contamination layer. The energy range is 200-3000 eV and the beam current can reach 8 μA.
[0047] The dual-detector assembly, connected to the hemispherical electron energy analyzer 2, includes a two-dimensional position detector and an electron multiplier detector. The two-dimensional position detector has 1000×1000 channels and a pixel size ≤10μm to improve spatial resolution detection. The electron multiplier detector has a linear range of 1×10⁻⁶. 9 CPS is used for high count rate signal acquisition, and the two work together to improve detection efficiency and accuracy.
[0048] The data analysis module is linked with the hemispherical electron energy analyzer 2 and the dual-light source system. It has a built-in XPS spectrum database and features automatic peak finding, multi-peak fitting (including Gaussian-Lorentzian / Asymmetric peak types), background subtraction (including Linear / Shirley / Tougaard / Smart modes), and elemental valence state and content analysis functions. It can export standardized analysis reports.
[0049] In this invention, the data analysis module's built-in XPS spectrum database contains peak positions and RSF sensitivity factor data for various elements. It can export standardized analysis reports including spectra, data tables, and conclusions, and works in conjunction with the dual-light source system and the high-low temperature sample manipulation stage 5 to achieve real-time matching of measurement parameters and analysis results. The rich database and algorithms support multi-scenario analysis, the hardware and software integration ensures data consistency, and the standardized reports improve experimental efficiency. This invention also includes: The sample introduction vacuum chamber 10 is separated from the vacuum magnetic shielding chamber 1 by a gate valve 11. The vacuum magnetic shielding chamber 1 and the sample introduction vacuum chamber 10 are isolated by the gate valve 11. The vacuum sample 6 is transferred in a vacuum environment by the sample transfer tool 12, avoiding the low measurement efficiency and sample contamination caused by frequent vacuum breaking.
[0050] The sample transfer tool 12 is used to deliver the vacuum sample 6 into the vacuum magnetic shielding cavity 1 and fix it on the high and low temperature sample handling stage 5. The sample transfer tool 12 transfers samples in a vacuum environment, avoiding atmospheric contamination. Efficient sample replacement and vacuum protection reduce the frequency of vacuum disruption in the analytical cavity and improve experimental efficiency.
[0051] In this invention, the X-ray source 3 and the ultraviolet light source 4 operate independently or collaboratively to excite the core-state electrons and valence band electrons of the vacuum sample, respectively. Combined with the transmission mode (XPS / UPS measurement) and angle-resolved mode (ARPES measurement) of the hemispherical electron energy analyzer, the measurement of core-state energy level electron information, conduction band electron information near the Fermi surface, and electron angle-resolved information of the sample can be completed in a single experiment. Furthermore, the depth profiling function of the argon ion etching gun 13 further yields elemental depth distribution data from the sample surface to its interior. This achieves integrated "multi-mode measurement + depth profiling," avoiding contamination and data deviation caused by sample transfer, and providing comprehensive information for material characterization.
[0052] In summary, the X-ray photoelectron spectrometer provided by this invention can perform integrated XPS, UPS, and ARPES measurements on any sample in a single experiment to obtain core-state energy level electronic information, conduction band electron information near the Fermi surface, and electron angle-resolved information. This avoids the measurement errors and inefficiencies caused by the need to change equipment or break down experimental procedures in traditional technologies. Furthermore, it can acquire complete photoelectron excitation data for the sample, including valence state, composition, content, conduction band electrons near the Fermi surface, and electron angle resolution, in a single experiment. This provides a continuous and systematic detection solution for multi-dimensional material characterization, becoming the core technological support for achieving "full-dimensional photoelectron measurement in a single experiment."
[0053] The above description is merely a preferred embodiment of the present invention. However, the scope of protection of the present invention is not limited thereto. Any equivalent substitutions or modifications made by those skilled in the art within the scope of the technology disclosed in the present invention should be covered within the scope of protection of the present invention.
Claims
1. A photoelectron spectrometer, characterized in that, include: A vacuum magnetic shielding cavity is used to provide the required vacuum and magnetic shielding environment for a vacuum sample inside. A hemispherical electron energy analyzer is installed inside the vacuum magnetic shielding cavity. It has a transmission mode and an angle-resolved mode, with the focus aligned with the measurement point of the vacuum sample. A dual-light source system, located within the vacuum magnetic shielding cavity, is equipped with an X-ray source and an ultraviolet light source, which are confocalized at the measurement points of the vacuum sample. A high-low temperature sample manipulation stage, located inside the vacuum magnetic shielding cavity, is used to load the vacuum sample and has a low-temperature refrigeration device and a heating device to meet the requirements of low-temperature and high-temperature measurements; An argon ion etching gun, located inside the vacuum magnetic shielding cavity, is used to clean and deeply analyze the surface of vacuum samples. Its energy range is 200–3000 eV and its beam current can reach 8 μA. A dual-detector assembly, connected to the hemispherical electron energy analyzer, includes a two-dimensional position detector and an electron multiplier detector; The data analysis module is connected to the hemispherical electron energy analyzer and the dual-light source system. It has a built-in XPS spectrum database and functions for automatic peak finding, multi-peak fitting, background subtraction, and elemental valence state and content analysis. It can also export standardized analysis reports.
2. The photoelectron spectrometer according to claim 1, characterized in that, Also includes: The sample introduction vacuum chamber is separated from the vacuum magnetic shielding chamber by a gate valve; A sample transfer tool is used to deliver the vacuum sample into the vacuum magnetic shielding cavity and fix it on the high and low temperature sample control platform.
3. A photoelectron spectrometer according to claim 1, characterized in that, The X-ray source and ultraviolet light source work independently or in combination to excite the core-state electrons and valence band electrons of the vacuum sample, respectively. This enables XPS, UPS, and ARPES measurements to be performed on any sample in a single experiment to obtain the sample's core-state energy level electron information, conduction band electron information near the Fermi surface, and electron angle-resolved information.
4. A photoelectron spectrometer according to claim 1, characterized in that, The hemispherical electron energy analyzer integrates a Jost aberration correction structure, with an energy resolution ≤0.05eV and an energy scanning range of 0.1eV to 3500eV.
5. A photoelectron spectrometer according to claim 1, characterized in that, The vacuum magnetic shielding cavity comprises a stainless steel outer shell and a μ metal liner built into the stainless steel outer shell. Optimized using magnetic field simulation software, its ultimate vacuum level is ≤5×10⁻⁶. -10 mbar, the central residual magnetic field of the vacuum magnetic shielding cavity is ≤30mGs.
6. A photoelectron spectrometer according to claim 1, characterized in that, The excitation energy source of the X-ray source is selected from at least one of the following: (1) Metal target X-ray tube; (2) Synchrotron radiation source; The excitation source of the ultraviolet light source is selected from at least one of the following: (1) Gas plasma light source; (2) Laser source.
7. A photoelectron spectrometer according to claim 6, characterized in that, The X-ray source is an Al / Ag dual-anode monochromatic X-ray source with a maximum tube voltage of 30kV, a maximum tube current of 10mA, a power of ≥155W, and a beam spot adjustment range of 50~400μm.
8. A photoelectron spectrometer according to claim 1, characterized in that, The high and low temperature sample manipulation stage has at least 4-axis motion. The cryogenic refrigeration device uses liquid nitrogen or liquid helium to cool to 4K. The heating device includes a laser and a coupler. The laser has an optimized red light wavelength and is introduced into the vacuum magnetic shielding cavity through the coupler and irradiates the back of the vacuum sample to achieve non-contact heating to 1300K.
9. A photoelectron spectrometer according to claim 1, characterized in that, The two-dimensional position detector has ≥1000×1000 channels and a pixel size ≤10μm; the electron multiplier detector has a linear range ≥1×10 9 cps.
10. A photoelectron spectrometer according to any one of claims 1-9, characterized in that, The XPS spectral database contains peak positions and RSF sensitivity factor data for various elements, and can export standardized analysis reports including spectra, data tables, and conclusions. It can also work in conjunction with the dual-light source system and the high- and low-temperature sample manipulation stage to achieve real-time matching of measurement parameters and analysis results.