Optoelectronic synergistic control system and method for solid-state microwave power device
By using a photoelectric coordinated control system, the ultraviolet light source and electric field are synchronously controlled to excite carriers and suppress defect states, thus solving the problem of limited output power density of GaN HEMT devices and achieving higher output power and efficiency.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- QIANYUAN NATIONAL LABORATORY
- Filing Date
- 2026-03-02
- Publication Date
- 2026-05-12
AI Technical Summary
In the existing technology, GaN HEMT devices rely on a single electric field for modulation, which limits the output power density and lacks effective means to suppress defect states, making it difficult to meet the future microwave system's demand for higher output power.
By introducing an ultraviolet light source as a second control dimension, and coordinating the emission of ultraviolet light with an electric field to emit specific photons, charge carriers are excited and current collapse effect is suppressed, thereby increasing the concentration of two-dimensional electron gas, neutralizing defect state charges, and improving the output power density of the device.
This achievement represents a significant breakthrough in the output power density of solid-state microwave power devices, enhancing their dynamic current capability and operating current, and overcoming the limitations of traditional single-field control.
Smart Images
Figure CN121751776B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of microelectronics technology, and in particular to a photoelectric coordinated control system and method for solid-state microwave power devices. Background Technology
[0002] Solid-state microwave devices are the core power conversion units of microwave systems such as wireless communication and deep space exploration. Their output power directly determines the effective operating distance and signal quality of the entire system. Solid-state microwave devices, represented by gallium nitride-based high electron mobility transistors (GaNHEMTs), have become the mainstream technology for achieving high power density and high efficiency microwave amplification due to their high breakdown field strength, high saturation electron velocity and good thermal stability.
[0003] However, traditional GaN HEMT devices rely entirely on the gate electric field to control the two-dimensional electron gas channel to generate microwave current, and their output power density is theoretically limited by the operating voltage and the maximum saturation current. In practical applications, the inherent high-density defect states in the GaN material system (such as surface states, buffer layer traps, etc.) will trap electrons under high field stress, causing a severe current collapse effect, which results in the dynamic maximum output current of the device being significantly lower than the static value, thus restricting further improvement of its power density.
[0004] Furthermore, existing technologies rely solely on a single electric field modulation paradigm, lacking effective means to actively suppress defect states and maintain high carrier concentration during device operation, making it difficult to meet the urgent demand of future microwave systems for higher output power. Summary of the Invention
[0005] To address the shortcomings of the existing technologies, this invention provides a photoelectric coordinated control system and method for solid-state microwave power devices, which solves the technical problem that the power density of solid-state microwave devices is difficult to further improve due to the use of a single electric field control method in the prior art.
[0006] This invention provides an optoelectronic coordinated control system for solid-state microwave power devices, comprising:
[0007] Gallium nitride high electron mobility transistor chips are used to generate microwave signals under gate electric field modulation.
[0008] An ultraviolet light source is used to emit ultraviolet light onto the gallium nitride high electron mobility transistor chip, wherein the photon energy emitted by the ultraviolet light source is less than the bandgap width of the barrier layer of the gallium nitride high electron mobility transistor chip, and is greater than or equal to the bandgap width of the channel layer and buffer layer of the gallium nitride high electron mobility transistor chip.
[0009] The control unit is used to synchronously control the operating timing of the ultraviolet light source and the gallium nitride high electron mobility transistor chip, wherein the operating pulse width of the ultraviolet light source is greater than the operating pulse width of the gallium nitride high electron mobility transistor chip.
[0010] Optionally, the electrode structure of the gallium nitride high electron mobility transistor chip includes an air bridge metal, wherein the percentage of the area of the air bridge metal that blocks the working area of the gallium nitride high electron mobility transistor chip is 0% to 60%.
[0011] Optionally, it further includes: an impedance matching network, the impedance matching network being connected to the input and output electrodes of the gallium nitride high electron mobility transistor chip; the impedance matching parameters of the impedance matching network are determined based on the output impedance of the gallium nitride high electron mobility transistor chip under the ultraviolet light source irradiation.
[0012] Optionally, the ultraviolet light source is a laser or a light-emitting diode.
[0013] Optionally, the ultraviolet light source includes a light source chip; the light source chip is mounted on the inner sidewall of the package of the gallium nitride high electron mobility transistor chip; or, the light source chip is mounted on the inner top cover of the package of the gallium nitride high electron mobility transistor chip; or, the light source chip is mounted on or adjacent to the gallium nitride high electron mobility transistor chip; or, the light source chip is integrated on the same chip adjacent to the gallium nitride high electron mobility transistor chip.
[0014] Optionally, the ultraviolet light emitted by the ultraviolet light source irradiates the working area of the gallium nitride high electron mobility transistor chip from at least one of the upper surface, side surface, or bottom surface of the chip.
[0015] Optionally, it also includes: a heat dissipation component, which is connected to the gallium nitride high electron mobility transistor chip and the ultraviolet light source, for dissipating heat through at least one of microchannel cooling, air cooling or thermoelectric cooling.
[0016] Another aspect of the present invention provides a method for optoelectronic coordinated control of a solid-state microwave power device, comprising:
[0017] An ultraviolet light source is used to irradiate a gallium nitride high electron mobility transistor chip to excite carriers and suppress current collapse effect. At the same time, a gate modulation voltage is applied to the gallium nitride high electron mobility transistor chip to generate a microwave signal. The irradiation pulse width of the ultraviolet light is greater than the working pulse width of the gate modulation voltage.
[0018] The photon energy emitted by the ultraviolet light source is less than the bandgap of the barrier layer of the gallium nitride high electron mobility transistor chip, and is greater than or equal to the bandgap of the channel layer and buffer layer of the gallium nitride high electron mobility transistor chip.
[0019] Optionally, the method further includes: adjusting the impedance matching network of the gallium nitride high electron mobility transistor chip based on the output impedance of the gallium nitride high electron mobility transistor chip under the irradiation of the ultraviolet light source.
[0020] Optionally, the method further includes: when the ultraviolet light source irradiates the gallium nitride high electron mobility transistor chip with ultraviolet light, the ultraviolet light penetrates the passivation layer of the gallium nitride high electron mobility transistor chip and is absorbed by the channel layer and the buffer layer, wherein the excited photogenerated electrons enter the conductive channel to increase the two-dimensional electron gas concentration, and the excited photogenerated holes recombine with charged defects in the gallium nitride high electron mobility transistor chip to suppress the current collapse effect.
[0021] The optoelectronic synergistic control system and method for solid-state microwave power devices provided by this invention introduces an ultraviolet light source as a second control dimension, in addition to the single dimension of electric field control. By emitting ultraviolet light with specific photon energies into the chip through the ultraviolet light source, the light field is used to excite charge carriers and interact with defect states simultaneously with electric field control, thereby directly addressing the current collapse effect and achieving optoelectronic synergistic control. The photon energy generated by the ultraviolet light source is limited to being less than the bandgap of the barrier layer and greater than or equal to the bandgap of the channel layer and buffer layer, ensuring that the ultraviolet light can effectively penetrate the barrier layer and is mainly absorbed by the channel layer and buffer layer. The system precisely excites electron-hole pairs, allowing electrons to enter the channel layer and increase the concentration of the two-dimensional electron gas. Holes recombine with negatively charged defect states, neutralizing their charge and directly suppressing current collapse, thereby increasing the device's operating current. Simultaneously, an electric field is applied to the device gate to regulate the operating current, increasing the device's output power density. The control unit synchronously controls these two regulation dimensions and limits the operating pulse width of the ultraviolet light source to be greater than that of the chip, ensuring that the suppression of defect states and the replenishment of charge carriers by the light field are both present and stable. This guarantees the effectiveness and reliability of the photoelectric synergy during dynamic operation. By actively suppressing defect states and increasing channel charge carriers through the light field, the system enhances the device's dynamic current capability. Combined with the electric field regulation of the device's dynamic current, this ultimately achieves a significant breakthrough in the output power density of solid-state microwave power devices.
[0022] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures particularly pointed out in the written description, claims, and drawings.
[0023] The technical solution of the present invention will be further described in detail below with reference to the accompanying drawings and embodiments. Attached Figure Description
[0024] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used in conjunction with embodiments of the invention to explain the invention and do not constitute a limitation thereof. In the drawings:
[0025] Figure 1 A schematic diagram of the overall structure of the optoelectronic coordinated control system of a solid-state microwave power device in one embodiment of this application;
[0026] Figure 2 A schematic flowchart of an optoelectronic coordinated control method for a solid-state microwave power device in one embodiment of this application;
[0027] Figure 3 A schematic diagram comparing the output power density of the device under different operating voltages with and without illumination;
[0028] Figure 4 This is a schematic diagram comparing the power-added efficiency curves of the device under and without illumination.
[0029] In the picture:
[0030] 101. Light source chip; 102. Package casing; 103. Heat sink; 104. Gallium nitride high electron mobility transistor chip; 105. Carrier; 106. Impedance matching network. Detailed Implementation
[0031] In the description of this invention, it should be understood that the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," and "counterclockwise," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this invention.
[0032] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.
[0033] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.
[0034] This invention provides, in one aspect, a photoelectric coordinated control system for solid-state microwave power devices, such as... Figure 1 As shown, it includes: a gallium nitride high electron mobility transistor chip 104 for generating microwave signals under gate electric field modulation; an ultraviolet light source for emitting ultraviolet light onto the gallium nitride high electron mobility transistor chip 104, wherein the photon energy emitted by the ultraviolet light source is less than the bandgap of the barrier layer of the gallium nitride high electron mobility transistor chip 104, and greater than or equal to the bandgap of the channel layer and buffer layer of the gallium nitride high electron mobility transistor chip 104; and a control unit for synchronously controlling the operating timing of the ultraviolet light source and the gallium nitride high electron mobility transistor chip 104, wherein the operating pulse width of the ultraviolet light source is greater than the operating pulse width of the gallium nitride high electron mobility transistor chip 104.
[0035] The optoelectronic synergistic control system for solid-state microwave power devices provided by this invention introduces an ultraviolet light source as a second control dimension, in addition to the single dimension of electric field control. By emitting ultraviolet light with specific photon energies into the chip through the ultraviolet light source, the light field is used to excite charge carriers and interact with defect states simultaneously with electric field control, thereby directly addressing the current collapse effect and achieving optoelectronic synergistic control. The photon energy generated by the ultraviolet light source is limited to being less than the bandgap of the barrier layer and greater than or equal to the bandgap of the channel layer and buffer layer, ensuring that the ultraviolet light can effectively penetrate the barrier layer and is mainly absorbed by the channel layer and buffer layer. This precisely excites electron-hole pairs, allowing electrons to enter the channel layer and increase the concentration of the two-dimensional electron gas. Holes recombine with negatively charged defect states, neutralizing their charge and directly suppressing current collapse, thereby increasing the device's operating current. Simultaneously, an electric field is applied to the device gate to regulate the operating current, increasing the device's output power density. The control unit synchronously controls these two regulation dimensions and limits the operating pulse width of the ultraviolet light source to be greater than that of the chip, ensuring that the suppression of defect states and the replenishment of charge carriers by the light field are both present and stable. This guarantees the effectiveness and reliability of the photoelectric synergy during dynamic operation. The above system actively suppresses defect states and increases channel charge carriers through the light field, enhancing the device's dynamic current capability. Combined with the electric field regulating the device's dynamic current, this ultimately achieves a significant breakthrough in the output power density of solid-state microwave power devices.
[0036] Specifically, in the above embodiments, the electrode structure of the gallium nitride high electron mobility transistor chip 104 includes an air bridge metal, and the percentage of the area of the air bridge metal that blocks the working area of the gallium nitride high electron mobility transistor chip 104 is 0% to 60%.
[0037] In this embodiment, in a conventional high-power gallium nitride high electron mobility transistor chip 104, an air bridge metal is an essential component used to achieve low-inductance interconnection between sources and to lead out drain signals. These metal traces typically cover the upper limit of the chip's working area. By setting the upper limit of the shading rate to 60% in this application, at least 40% of the working area can be directly exposed to ultraviolet light irradiation, allowing light energy to penetrate the passivation layer without obstruction and reach the interior of the semiconductor material. Here, 0% shading is the critical lower limit, while 60% shading is the critical upper limit to ensure the effectiveness of light injection.
[0038] Based on this, the occlusion rate is controlled below 60%, providing the necessary structural conditions for the physical realization of optical field excitation. A balance is achieved between optical and electrical performance. On the one hand, an air bridge metal is needed to ensure a low-resistance, low-inductance current path to maintain excellent electrical performance and reliability under high frequency and high power. On the other hand, as many open windows as possible are needed to allow light injection. The optimized occlusion rate ensures that the photons emitted by the light source can be efficiently utilized, ensuring that the light energy can not only reach the channel layer or buffer layer, but also has sufficient flux to excite sufficient electron-hole pairs in the region, thereby suppressing current collapse and increasing carrier concentration, ultimately improving the output power density of the device.
[0039] Specifically, in the above embodiments, such as Figure 1 As shown, the system also includes an impedance matching network 106, which is connected to the input and output electrodes of the gallium nitride high electron mobility transistor chip 104; the impedance matching parameters of the impedance matching network 106 are determined based on the output impedance of the gallium nitride high electron mobility transistor chip 104 under ultraviolet light irradiation.
[0040] In this embodiment, the impedance matching network 106 is physically connected to the input and output electrodes of the gallium nitride high electron mobility transistor chip 104, forming part of the radio frequency output path. Furthermore, the impedance matching parameters of the impedance matching network 106 are not determined based on the impedance of the device under conventional no-light conditions, but are designed and determined based on the output impedance of the chip under ultraviolet light irradiation. It can be seen that this application utilizes the physical fact that ultraviolet light irradiation will change the internal carrier distribution and defect state charge of the gallium nitride high electron mobility transistor chip 104. Considering that this change will cause the microwave output impedance of the chip to shift, the impedance matching network 106 must be optimized for the optoelectronic co-operation state.
[0041] Based on this, by matching the impedance matching network 106 with the chip impedance under illumination, the reflection of RF signals at the output end can be minimized, ensuring that the chip-level performance improvement brought about by photoexcitation can be efficiently converted into a system-level output power improvement. By forming a complete optoelectronic synergistic optimization closed loop, the system adaptation problem caused by this effect is further solved, reflecting the end-to-end innovation from device physics to circuit system. Optimized impedance matching can reduce unnecessary losses, so that while photoexcitation increases DC power consumption, the RF output power can be increased by a larger proportion, thereby ultimately achieving an overall efficiency improvement.
[0042] Specifically, in the above embodiments, the ultraviolet light source is a laser or a light-emitting diode.
[0043] In this embodiment, lasers typically possess characteristics of good directionality, high brightness, and good monochromaticity, which facilitates the efficient and precise coupling of ultraviolet light energy into the working area of the chip, achieving stronger light excitation. Light-emitting diodes (LEDs) typically have advantages such as low cost, ease of integration, long lifespan, and simple driving, making them particularly suitable for being packaged together with microwave devices in an array to achieve a compact and reliable optoelectronic integrated system. Furthermore, any device capable of emitting ultraviolet light that meets the photon energy conditions of this application is within the scope of this invention, including but not limited to other types of solid-state ultraviolet light sources, gas discharge ultraviolet lamps, etc., and is not limited to a specific light source implementation.
[0044] Specifically, in the above embodiments, such as Figure 1 As shown, the ultraviolet light source includes a light source chip 101; the light source chip 101 is mounted on the inner sidewall of the package 102 of the gallium nitride high electron mobility transistor chip 104; or, the light source chip 101 is mounted on the inner top cover of the package 102 of the gallium nitride high electron mobility transistor chip 104; or, the light source chip 101 is mounted on or adjacent to the gallium nitride high electron mobility transistor chip 104; or, the light source chip 101 is integrated on-chip at an adjacent position to the gallium nitride high electron mobility transistor chip 104.
[0045] In this process, the gallium nitride high electron mobility transistor chip 104 is first fixed onto the carrier 105 by welding or bonding. The carrier 105 is usually made of a material with high thermal conductivity, and its function is to provide stable mechanical support, good electrical grounding and efficient heat diffusion path for the chip. Subsequently, the carrier 105 is mounted on the surface of the heat sink 103. The heat sink 103 can integrate active heat dissipation structures such as microchannels. Thus, the heat generated by the gallium nitride high electron mobility transistor chip 104 during operation is rapidly conducted to the heat sink 103 through the carrier 105 and is finally carried away by the cooling medium.
[0046] In this embodiment, the specific mounting positions are given. One type is mounted on the inner sidewall of the package housing 102, where light illuminates the working area horizontally or obliquely from the side, which is beneficial for achieving large-area or array-style illumination and is suitable for scenarios requiring uniform illumination of large-size chips or multiple sub-units. Another type is mounted on the inner top cover of the package housing 102, such as... Figure 1As shown, light shines vertically downwards onto the working area from above, providing a direct optical path that facilitates large-area uniform illumination with minimal alteration to the internal layout of the housing. Another method involves mounting the light source chip 101 directly onto or adjacent to the chip, stacking or placing it side-by-side on the same substrate of the microwave chip. This achieves the shortest possible micron-level optical coupling, resulting in the shortest optical path and highest coupling efficiency, minimal light energy loss, and precise local excitation. Furthermore, for more compact integration, the light source chip 101 can be integrated on-chip into an adjacent position of the gallium nitride high electron mobility transistor chip 104, mounted together on the same sub-substrate or heat sink 103 within the package. This enables the shortest physical distance and thermal path between optoelectronic chips at the packaging level, optimizing optical coupling efficiency and thermal management performance.
[0047] Based on this, the light source chips are all integrated inside the package, so that they are in the same protected hermetically sealed environment as the gallium nitride high electron mobility transistor chip 104, avoiding the reliability risks that may be caused by external fiber optic connections and ensuring the long-term working stability of the system in harsh environments.
[0048] Specifically, in the above embodiments, the ultraviolet light emitted by the ultraviolet light source irradiates the channel region of the gallium nitride high electron mobility transistor chip 104 from at least one of the upper surface, side surface, or bottom surface.
[0049] In this embodiment, there are three possible spatial paths for ultraviolet light to reach the working area of the chip. One is illumination from the top surface, where the ultraviolet light penetrates the passivation layer and electrode gap on the front side of the chip vertically or nearly vertically to enter the working area of the device. This is the most intuitive illumination method, and the energy is mainly absorbed by the barrier layer and channel layer near the surface. Another is illumination from the side, where the ultraviolet light enters from the side of the chip and propagates laterally inside the chip to the working area. This usually requires special treatment at the chip edge, and the light energy can penetrate deeper into the buffer layer, which is more effective for exciting and neutralizing deep level defects located deep in the buffer layer. The third is illumination from the bottom surface, where the ultraviolet light enters from the back side of the chip substrate (usually SiC or Si), penetrates upward through the substrate and buffer layer, and reaches the working area. This requires the substrate material to have sufficient transparency in the ultraviolet band.
[0050] As can be seen, this application provides side and bottom illumination paths, offering a key solution to avoid front optical obstacles, enabling efficient light injection even without adjusting the front electrode layout, and significantly improving compatibility and versatility for different chip layout designs.
[0051] Specifically, in the above embodiments, the system further includes a heat dissipation component, which is connected to the gallium nitride high electron mobility transistor chip 104 and the ultraviolet light source, and is used to dissipate heat through at least one of microchannel cooling, air cooling or thermoelectric cooling.
[0052] Among them, microchannel cooling is suitable for high performance and compact integration, air cooling is suitable for cost-sensitive and space-allowed scenarios, and thermoelectric cooling is suitable for scenarios requiring precise temperature control. These methods provide options for applications with different performance levels, packaging forms, and cost requirements, enhancing the practicality and coverage of the system.
[0053] In this embodiment, photoexcitation, while increasing carrier concentration, introduces additional photogenerated heat and self-heating of the light source. Without thermal management, the significant increase in device junction temperature will lead to a decrease in carrier mobility, deterioration of reliability, and may even completely negate the performance gain brought by photoexcitation. However, by using a heat dissipation component for active and efficient heat dissipation, the device can still operate within a safe and stable temperature range in the optoelectronic synergy mode, thereby ensuring the sustainability of performance improvement and the long lifespan of the device. Furthermore, this application integrates two closely adjacent heat sources, namely the gallium nitride high electron mobility transistor chip 104 and the ultraviolet light source, which are thermally coupled to each other. Therefore, effective heat dissipation is a prerequisite for the device to operate at higher power densities, enabling both the microwave chip and the ultraviolet light source to operate at higher currents and higher optical power, thereby fully exploiting the performance potential of optoelectronic synergy and maintaining stable device parameters.
[0054] Another aspect of the present invention provides a method for optoelectronic coordinated control of solid-state microwave power devices, such as... Figure 2 As shown, the method includes: irradiating a gallium nitride high electron mobility transistor (GaN high electron mobility transistor) chip 104 with ultraviolet light to excite carriers and suppress current collapse effect; simultaneously applying a gate modulation voltage to the GaN high electron mobility transistor chip 104 to generate a microwave signal; the irradiation pulse width of the ultraviolet light is greater than the working pulse width of the gate modulation voltage; wherein, the photon energy emitted by the ultraviolet light source is less than the bandgap width of the barrier layer of the GaN high electron mobility transistor chip 104, and greater than or equal to the bandgap width of the channel layer and buffer layer of the GaN high electron mobility transistor chip 104.
[0055] This invention provides a photoelectric synergistic control method for solid-state microwave power devices. By synchronously applying an electric field and ultraviolet light of a specific spectrum, and combining precise timing control with an optical pulse width greater than the electrical pulse, a complete and operable photoelectric synergistic control instruction set is formed. This provides a new means to break through traditional power limitations from a physical mechanism perspective. Through precise spectral and timing control, the efficiency and stability of the method are ensured. Ultimately, this provides a practical method for achieving higher output power density in solid-state microwave power devices.
[0056] Specifically, in the above embodiments, the method further includes: adjusting the impedance matching network 106 of the gallium nitride high electron mobility transistor chip 104 based on the output impedance of the gallium nitride high electron mobility transistor chip 104 under ultraviolet light irradiation.
[0057] In this embodiment, the mismatch problem introduced by optoelectronic synergy is resolved, ensuring that the performance improvement can be effectively transferred to the system output. This is a necessary technical means to achieve power-added efficiency improvement, completing a closed loop from device control to system optimization, and enhancing the integrity and practicality of the solution. In summary, by dynamically adapting to the changes in device characteristics under optoelectronic synergy, the impedance matching network 106 is specifically adjusted, thereby solving the system-level impedance mismatch problem introduced by light. This ensures that the performance gain at the device level can be losslessly converted into the system output, which is a key technical guarantee for achieving high-efficiency, high-power output.
[0058] Specifically, in the above embodiments, the method further includes: when an ultraviolet light source irradiates the gallium nitride high electron mobility transistor chip 104 with ultraviolet light, the ultraviolet light penetrates the passivation layer of the gallium nitride high electron mobility transistor chip 104 and is absorbed by the channel layer and the buffer layer. In this process, the excited photogenerated electrons enter the conductive channel to increase the concentration of two-dimensional electron gas, while the excited photogenerated holes recombine with charged defects in the gallium nitride high electron mobility transistor chip 104 to suppress the current collapse effect.
[0059] In this embodiment, two parallel microscopic processes of light energy conversion into electrical performance enhancement are clearly defined: photogenerated electrons increase the channel carrier concentration, enhance current capability, and neutralize defect charges with photogenerated holes, suppressing current collapse; and the light must act on a specific functional layer to generate two types of carriers with specific purposes. Based on this, by clarifying the core physical mechanism, the technical contribution of this invention is extended from the purpose and result level to the specific action path level, thereby enhancing the feasibility of the solution.
[0060] This application provides an embodiment of an optoelectronic synergistic control method for solid-state microwave power devices:
[0061] In the experimental device fabrication and integration stage, firstly, a conventional S-band gallium nitride high electron mobility transistor chip 104 was fabricated. During device packaging, an optoelectronic integrated packaging process was employed. During the fabrication of the microwave housing, metal leads for powering the ultraviolet LED chip array were pre-embedded and insulated within the housing sidewall. Subsequently, an ultraviolet LED chip array with a peak emission wavelength of approximately 365nm was precisely mounted onto the inner side of the top cover inside the housing using a eutectic bonding process, ensuring its emitting surface faces the chip's working area inside the housing. The LED array's mounting position was optimized through optical simulation to ensure efficient and uniform ultraviolet light irradiation of the chip surface. Figure 1 As shown, a heat sink 103 is integrated at the bottom of the package to handle the heat generated by the gallium nitride high electron mobility transistor chip 104 and the ultraviolet LED chip during operation.
[0062] In the operation and testing phase, the packaged optoelectronic integrated device is installed in a test fixture and connected to a pulsed microwave test system. A synchronous drive pulse signal is generated through an external synchronization control unit. One path serves as the gate modulation voltage of the gallium nitride high electron mobility transistor chip 104, and the other path drives the ultraviolet LED array. The control unit precisely sets the timing so that the light pulse width of the LED is slightly wider than the gate electrical pulse width of the gallium nitride high electron mobility transistor chip 104, ensuring that the device is in a stable photoexcitation state before and after the microwave signal is generated. In the test, the output power density and power-added efficiency (PAE) of the device were compared under the same bias and input power conditions, with and without ultraviolet light irradiation.
[0063] like Figure 3 As shown, the output power density of the device is compared under different drain operating voltages. The horizontal axis of the figure represents the drain voltage V. DS The vertical axis represents the output power density P. out At each test voltage point, the output power density corresponding to the curve with ultraviolet light irradiation was significantly higher than that of the curve without irradiation. Experimental data show that under typical operating conditions, the introduction of ultraviolet light enabled the device to achieve a stable increase of about 15% in microwave output power, verifying the effect of photoexcitation to supplement channel electrons, suppress current collapse, and thus improve saturated output current and power.
[0064] like Figure 4 As shown, the curve illustrates the power-added efficiency of the device as a function of input power. The horizontal axis in the figure represents the input power P. in The vertical axis represents the power-added efficiency (PAE), which shows that at the drain voltage V... DSAt 100V, in the low input power region, the device's PAE is slightly lower than in the no-light state due to the additional DC power consumption introduced by turning on the LED. However, as the input power increases, the PAE curve under illumination rises rapidly and surpasses the PAE curve under no-light state after a certain input power point, and its maximum PAE value is improved. This result proves that the optoelectronic synergistic control mechanism of this application not only improves the output power but also optimizes the efficiency in the high-power operating region, overcoming the inherent contradiction that simply increasing the drive current usually leads to a decrease in efficiency, and demonstrating the synergistic advantages of the system.
[0065] Obviously, those skilled in the art can make various modifications and variations to this invention without departing from its spirit and scope. Therefore, if these modifications and variations fall within the scope of the claims of this invention and their equivalents, this invention also intends to include these modifications and variations.
Claims
1. A photoelectric coordinated control system for a solid-state microwave power device, characterized in that, include: Gallium nitride high electron mobility transistor chip (104) for generating microwave signals under gate electric field modulation; An ultraviolet light source is used to emit ultraviolet light to the gallium nitride high electron mobility transistor chip (104), wherein the energy of the photons emitted by the ultraviolet light source is less than the bandgap of the barrier layer of the gallium nitride high electron mobility transistor chip (104), and greater than or equal to the bandgap of the channel layer and the buffer layer of the gallium nitride high electron mobility transistor chip (104); The control unit is used to synchronously control the working timing of the ultraviolet light source and the gallium nitride high electron mobility transistor chip (104), and the working pulse width of the ultraviolet light source is greater than the working pulse width of the gallium nitride high electron mobility transistor chip (104). The electrode structure of the gallium nitride high electron mobility transistor chip (104) includes an air bridge metal, the percentage of the area of the air bridge metal that blocks the working area of the gallium nitride high electron mobility transistor chip (104) is 0% to 60%.
2. The system according to claim 1, characterized in that, Also includes: An impedance matching network (106) is connected to the input and output electrodes of the gallium nitride high electron mobility transistor chip (104); The impedance matching parameters of the impedance matching network (106) are determined based on the output impedance of the gallium nitride high electron mobility transistor chip (104) under the ultraviolet light source irradiation.
3. The system according to claim 1, characterized in that, The ultraviolet light source is a laser or a light-emitting diode.
4. The system according to claim 1, characterized in that, The ultraviolet light source includes a light source chip (101); The light source chip (101) is mounted on the inner sidewall of the package (102) of the gallium nitride high electron mobility transistor chip (104); or, The light source chip (101) is mounted inside the upper cover of the package (102) of the gallium nitride high electron mobility transistor chip (104); or, The light source chip (101) is mounted on or adjacent to the gallium nitride high electron mobility transistor chip (104); or, The light source chip (101) is integrated on-chip at a position adjacent to the gallium nitride high electron mobility transistor chip (104).
5. The system according to claim 1, characterized in that, The ultraviolet light emitted by the ultraviolet light source irradiates the channel region of the gallium nitride high electron mobility transistor chip (104) from at least one of the upper surface, side surface, or bottom surface.
6. The system according to claim 1, characterized in that, Also includes: A heat dissipation component, which is connected to the gallium nitride high electron mobility transistor chip (104) and the ultraviolet light source, is used to dissipate heat through at least one of microchannel cooling, air cooling or thermoelectric cooling.
7. A method for optoelectronic coordinated control of a solid-state microwave power device, characterized in that, The method is applied to the optoelectronic coordinated control system of the solid-state microwave power device according to any one of claims 1 to 6, and the method includes: Ultraviolet light is used to irradiate the gallium nitride high electron mobility transistor chip (104) to excite carriers and suppress current collapse effect. At the same time, a gate modulation voltage is applied to the gallium nitride high electron mobility transistor chip (104) to generate a microwave signal. The irradiation pulse width of the ultraviolet light is greater than the working pulse width of the gate modulation voltage. The photon energy emitted by the ultraviolet light source is less than the bandgap of the barrier layer of the gallium nitride high electron mobility transistor chip (104), and greater than or equal to the bandgap of the channel layer and buffer layer of the gallium nitride high electron mobility transistor chip (104).
8. The method according to claim 7, characterized in that, The method further includes: Based on the output impedance of the gallium nitride high electron mobility transistor chip (104) under the irradiation of the ultraviolet light source, the impedance matching network (106) of the gallium nitride high electron mobility transistor chip is adjusted.
9. The method according to claim 7 or 8, characterized in that, The method further includes: When the ultraviolet light source irradiates the gallium nitride high electron mobility transistor chip (104), the ultraviolet light penetrates the passivation layer of the gallium nitride high electron mobility transistor chip (104) and is absorbed by the channel layer and the buffer layer. The excited photogenerated electrons enter the conductive channel to increase the two-dimensional electron gas concentration, while the excited photogenerated holes recombine with the charged defects in the gallium nitride high electron mobility transistor chip (104) to suppress the current collapse effect.