Perovskite solar cell internal packaging method and solar cell

Abstract

The invention belongs to the technical field of solar cells, and discloses a perovskite solar cell internal packaging method and a solar cell. The packaging method comprises the following steps: S1, preparing a perovskite solar cell device; s2, preparing that the packaging environment temperature is lower than 80 DEG C, and sequentially depositing an aluminum oxide layer and a silicon dioxide layer on the outer surface of a counter electrode layer of the perovskite solar cell device; and S3, repeating the step S2 at least once. Through the method, contact between the perovskite solar cell and water vapor can be isolated, so that the cell has good water and oxygen blocking performance, the water and oxygen stability is remarkably improved while high photoelectric conversion efficiency is maintained, and the service life and the stability of the perovskite solar cell are greatly improved. Besides, according to the packaging method, a low-temperature environment can be maintained in the packaging process, so that the performance of the perovskite light absorption layer is not influenced, the packaged perovskite solar cell is enabled to maintain a relatively high yield, the service life of the solar cell is further prolonged, and the safety and the stability of the solar cell are further improved.

Description

Technical Field

[0001] This invention relates to the field of solar cell technology, and in particular to a method for internal encapsulation of a perovskite solar cell and the solar cell itself. Background Technology

[0002] Currently, perovskite solar cells are inherently susceptible to damage, performance degradation, and even failure due to environmental factors such as moisture, oxygen, dust, corrosive chemicals, external impacts, or ion migration within the perovskite cell itself, making them unable to operate stably in natural environments for extended periods. Therefore, to ensure long-term, efficient, and stable operation, the cell structure must be rationally designed and encapsulated to completely isolate it from moisture and oxygen. Under air-isolated conditions, the stability of perovskite solar cells is significantly improved.

[0003] Traditional perovskite solar cell encapsulation technology may not meet the requirements for waterproofing or oxygen barrier properties; in addition, the encapsulation process often requires high-temperature operation, and the heat generated by the high temperature can affect the performance of perovskite solar cells.

[0004] Therefore, there is an urgent need to design a new internal encapsulation method for perovskite solar cells and a new type of solar cell to solve the problems existing in the current technology. Summary of the Invention

[0005] One objective of this invention is to provide an internal encapsulation method for perovskite solar cells, which can further improve the water and oxygen barrier properties of perovskite solar cells, ensure the safety of perovskite solar cells during the encapsulation process, and improve production yield.

[0006] To achieve this objective, the present invention adopts the following technical solution:

[0007] Methods for internal encapsulation of perovskite solar cells include:

[0008] S1. Prepare perovskite solar cell devices;

[0009] S2. Prepare for an encapsulation environment temperature < 80℃, and sequentially deposit an aluminum oxide layer and a silicon dioxide layer on the outer surface of the counter electrode layer of the perovskite solar cell device.

[0010] S3. Repeat step S2 at least once.

[0011] Preferably, step S0 is included before S1, and step S0 includes:

[0012] S01, a conductive substrate layer and a hole transport layer are sequentially deposited;

[0013] S02. Prepare an encapsulation environment temperature < 80℃, and deposit a barrier encapsulation layer on the side of the hole transport layer away from the conductive substrate layer.

[0014] S03. A perovskite light absorption layer, an electron transport layer, and a counter electrode layer are sequentially deposited on the side of the barrier encapsulation layer opposite to the hole transport layer to obtain the perovskite solar cell device.

[0015] Preferably, the material of the barrier encapsulation layer is silicon dioxide.

[0016] Preferably, the silicon dioxide layer and the barrier encapsulation layer are prepared using inductively coupled plasma-enhanced chemical vapor deposition (ICP-CCVD); and / or, the alumina layer is prepared using atomic deposition (ALD) equipment.

[0017] Preferably, the source power of the inductively coupled plasma is 300-3000W;

[0018] And / or, the bias power is 0-50W;

[0019] And / or, the packaging environment temperature is room temperature - 80°C;

[0020] And / or, the pressure inside the vacuum deposition chamber is 0.1-30 Pa.

[0021] Preferably, in step S3, the repetition period is 2-5 times.

[0022] Another objective of this invention is to provide a solar cell that can further improve water and oxygen barrier properties, ensure safety during the encapsulation process, improve production quality, and extend service life.

[0023] To achieve this objective, the present invention adopts the following technical solution:

[0024] The solar cell, fabricated using the aforementioned internal encapsulation method for perovskite solar cells, includes:

[0025] Perovskite solar cell devices;

[0026] N composite encapsulation layers are stacked on top of each other on the perovskite solar cell device. Each composite encapsulation layer includes an alumina layer and a silicon dioxide layer. The alumina layer and the silicon dioxide layer are arranged sequentially in a direction away from the perovskite solar cell device and are located in the composite encapsulation layer closest to the perovskite solar cell device. The alumina layer is sandwiched between the silicon dioxide layer and the counter electrode layer of the perovskite solar cell device. Wherein, N is a positive integer not less than 2.

[0027] Preferably, the perovskite solar cell device includes:

[0028] Conductive substrate layer;

[0029] A hole transport layer, wherein the hole transport layer is deposited on the conductive substrate layer;

[0030] A barrier encapsulation layer is disposed on the hole transport layer, and the hole transport layer is sandwiched between the conductive substrate layer and the barrier encapsulation layer.

[0031] A perovskite light-absorbing layer is deposited on the barrier encapsulation layer, and the barrier encapsulation layer is sandwiched between the hole transport layer and the perovskite light-absorbing layer.

[0032] An electron transport layer is deposited on the perovskite light absorption layer, and the perovskite light absorption layer is sandwiched between the barrier encapsulation layer and the electron transport layer.

[0033] The counter electrode layer is deposited on the electron transport layer and sandwiched between the electron transport layer and the N-layer composite encapsulation layer.

[0034] Preferably, the hole transport layer uses an organic hole transport material or an inorganic hole transport material. The organic hole transport material includes one or more of Spiro-OMeTAD, PTAA, and P3HT, and the inorganic hole transport material includes NiO. x One or more of Cu2O and CuSCN;

[0035] The perovskite light-absorbing layer uses a compound with the structural formula "ABX3", wherein: A is one or more of H, N=CHNH3, CH3NH3 and Cs, B is one or more of Pb and Sn, and X is one or more of I, Br and Cl;

[0036] The electron transport layer comprises at least one of organic and inorganic electron transport materials, wherein the organic electron transport material comprises one or more of C60, PCBM, and BCP, and the inorganic electron transport material comprises SnO. x and at least one of TiO2;

[0037] The counter electrode layer includes a composite film, which is composed of a transparent conductive film and a metal film. The transparent conductive film is made of one or more of ITO, IZO, and IGZO, and the metal film is made of any one of copper, gold, and silver.

[0038] The barrier encapsulation layer is made of silicon dioxide or aluminum oxide.

[0039] Preferably, N is 2-5.

[0040] The beneficial effects of this invention are:

[0041] This embodiment provides a method for internal encapsulation of perovskite solar cells. This method involves alternately depositing aluminum oxide and silicon dioxide layers on the outer surface of the counter electrode layer, forming an "inorganic-inorganic" nanolayered encapsulation structure. By depositing N consecutive cycles, the method significantly isolates the perovskite solar cell from moisture, giving the encapsulation structure excellent water and oxygen barrier properties. While maintaining the high photoelectric conversion efficiency of the perovskite solar cell, it significantly improves water and oxygen stability, greatly enhancing the lifespan and stability of the perovskite solar cell. Furthermore, the encapsulation environment temperature of this method is below 80°C, lower than that of typical encapsulation processes. This low-temperature environment ensures that the performance of the perovskite light-absorbing layer is not affected, resulting in a high yield rate for the encapsulated perovskite solar cell.

[0042] This embodiment also provides a solar cell, which is obtained by the above-mentioned internal encapsulation method of perovskite solar cells. This not only further improves the water and oxygen barrier properties of the solar cell, but also allows the entire production process of the solar cell to be carried out at a temperature of <80°C, avoiding the impact of high temperature on the perovskite light absorption layer. This further improves the production quality and safety of the solar cell, thereby extending the service life of the solar cell. Attached Figure Description

[0043] Figure 1 This is a schematic diagram of the structural composition of existing perovskite solar cells;

[0044] Figure 2 This is a schematic flowchart of the internal encapsulation method for perovskite solar cells provided in an embodiment of the present invention;

[0045] Figure 3 This is a schematic diagram illustrating the water-blocking and oxygen-blocking effect of the control group;

[0046] Figure 4 This is a schematic diagram illustrating the water and oxygen barrier effect of a solar cell prepared using the invention.

[0047] Figure 5 This is a comparison chart of the PCE performance indicators between the control group and the solar cells prepared using the present invention.

[0048] Figure 6 This is a comparison chart of the PCE stability tracking performance between the control group and the solar cells prepared using the invention of this technology;

[0049] Figure 7This is a schematic diagram of the structural composition of a solar cell provided in an embodiment of the present invention.

[0050] In the picture:

[0051] 1. Conductive substrate layer; 11. Substrate; 12. Transparent conductive electrode layer; 2. Hole transport layer; 3. Perovskite light absorption layer; 4. Electron transport layer; 5. Counter electrode layer; 100. Perovskite solar cell device; 110. Barrier encapsulation layer; 200. Alumina layer; 300. Silicon dioxide layer. Detailed Implementation

[0052] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, and not all of the structures.

[0053] In the description of this invention, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0054] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0055] In the description of this embodiment, the terms "upper," "lower," "right," and "left," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention. In addition, the terms "first" and "second" are used only for distinction in description and have no special meaning.

[0056] The technical solution provided by the present invention will be described below with reference to the accompanying drawings and specific embodiments.

[0057] It should be noted in advance that the reference Figure 1 As shown, the core basic structure of a perovskite solar cell generally includes, from bottom to top, a conductive substrate layer 1, a hole transport layer 2, a perovskite light-absorbing layer 3, an electron transport layer 4, and a counter electrode layer 5. The conductive substrate layer 1 supports the entire cell structure, provides mechanical support, and is transparent, allowing sunlight to enter the perovskite light-absorbing layer 3. The hole transport layer 2 extracts holes from the perovskite light-absorbing layer 3 and transports them to the conductive substrate layer 1, while blocking electrons. The core function of the perovskite light-absorbing layer 3 is to absorb sunlight and convert photon energy into electron-hole pairs. The electron transport layer 4 extracts electrons from the perovskite light-absorbing layer 3 and transports them to the counter electrode layer 5, while blocking holes. The counter electrode layer 5 collects holes transported from the hole transport layer 2, thus forming a complete current loop, and does not require light transmission. Current perovskite solar cell module encapsulation technology cannot meet the requirements for waterproofing or oxygen barrier properties; furthermore, the encapsulation process often requires high-temperature operation, and the heat generated by the high temperature can affect the performance of the perovskite cell.

[0058] To address the technical problems existing in the aforementioned component encapsulation technologies, this application provides a method for internal encapsulation of perovskite solar cells. This method isolates the encapsulated perovskite solar cells from corrosive chemicals such as moisture, oxygen, and dust in the external air environment, preventing moisture penetration into the encapsulated cell and causing decomposition of the perovskite material in humid environments, thereby preventing performance degradation. Furthermore, compared to existing component encapsulation technologies, the encapsulation method provided in this application offers higher water resistance and oxygen barrier properties; moreover, it reduces the impact on the performance of the perovskite material during the encapsulation process, thus significantly improving the stability of perovskite solar cells and making them more suitable for industrialization.

[0059] Specifically, refer to Figure 2 As shown, the encapsulation method specifically includes: S1, preparing a perovskite solar cell device 100; S2, preparing an encapsulation environment temperature <80℃, and sequentially depositing an aluminum oxide layer 200 and a silicon dioxide layer 300 on the outer surface of the counter electrode layer 5 of the perovskite solar cell device 100; S3, repeating step S2 at least once.

[0060] In this embodiment, the perovskite solar cell device 100 mainly refers to a perovskite solar cell device with completed electrode deposition. By alternately depositing an alumina layer 200 and a silicon dioxide layer 300 on the outer surface of the counter electrode layer 5, an "inorganic-inorganic" nano-stacked encapsulation structure can be formed on the outer surface of the counter electrode layer 5. Because the alumina layer 200 has the characteristics of being pinhole-free, highly dense, and highly adhesive, and the lattice defects of the alumina layer 200 and the silicon dioxide layer 300 can compensate for each other, the permeation path of water and oxygen molecules is significantly reduced. Furthermore, by continuously depositing N cycles, the contact between the perovskite solar cell and water vapor can be significantly isolated, giving the encapsulation structure excellent water and oxygen barrier properties. While maintaining the high photoelectric conversion efficiency of the perovskite solar cell, the stability of water and oxygen is significantly improved, greatly increasing the lifespan and stability of the perovskite solar cell. This allows for temporary storage time of the battery substrate 11 before lamination and encapsulation of large-size perovskite modules. In addition, the encapsulation environment temperature of this encapsulation method is below 80°C, which is lower than the temperature of general encapsulation processes. This allows the encapsulation process to maintain a low-temperature environment, thus not affecting the performance of the perovskite light-absorbing layer 3, and ensuring that the perovskite solar cells obtained after encapsulation maintain a high yield.

[0061] For example, refer to Figure 3 , Figure 4 As shown, the solar cell prepared using the present invention is labeled "Example 1". In this example, the water- and oxygen-blocking principle of the "inorganic-inorganic" nanolayer encapsulation structure is as follows: the surface of the encapsulation structure has a contact angle greater than 120°, exhibiting good hydrophobicity. It can be understood that the contact angle (or droplet angle) refers to the angle θ formed at the solid-liquid-gas three-phase interface point on a solid horizontal plane, where the liquid phase is sandwiched between the two tangents of the gas-liquid interface and the solid-liquid interface. If θ < 90°, the solid surface is hydrophilic, meaning the liquid easily wets the solid; the smaller the angle, the better the wettability. If θ > 90°, the solid surface is hydrophobic, meaning the liquid does not easily wet the solid and easily moves on the surface.

[0062] Depend on Figure 3 It can be seen that the surface of the control group has a large contact area with the water droplets, and the surface of the perovskite solar cell is easily wetted; while in Example 1 using this solution, the contact area with the water droplets is small, and the surface of the perovskite solar cell is not easily wetted.

[0063] Depend on Figure 4 As can be seen, the horizontal reference dot line is the solid-liquid interface line, and the water droplet contact angle is the angle between the tangent of the gas-liquid interface and the solid-liquid interface line. In Example 1 using this technical solution, the water droplet contact angle on the surface is 124°, thus exhibiting good hydrophobicity and improving the overall moisture resistance of the perovskite solar cell. In contrast, in the control group, the water droplet contact angle on the surface of the perovskite solar cell is 89°, indicating poor moisture resistance.

[0064] Specifically, in step S2, the alumina layer 200 is prepared using an atomic deposition (ALD) device. The ALD device can be either time-dependent or space-dependent. The precursor material is TMA (trimethylaluminum) reacted with process water (H2O). The deposition temperature can be 90–150°C, and in this embodiment, 90°C is preferred. The alumina film thickness can be 5–10 nm, and in this embodiment, 5 nm is preferred. The alumina layer 200 formed by the above configuration is fully compatible with the perovskite solar absorption layer, avoiding thermal stress damage.

[0065] Specifically, in step S2, the silicon dioxide layer 300 is prepared using inductively coupled plasma-enhanced chemical vapor deposition (ICP-PECVD). In other parallel embodiments, the silicon dioxide layer 300 can also be prepared using an ultrathin low-temperature atomic layer apparatus. In one specific embodiment, the process parameters involved in preparing the silicon dioxide layer 300 using ICP-PECVD technology include: ICP source power, bias power, packaging ambient temperature, and intracavitary pressure in the vacuum deposition chamber.

[0066] The source power of the ICP is 300-3000W, and the silicon dioxide layer 300 can generate high-density plasma. In this embodiment, the source power of the ICP is preferably 800W.

[0067] The bias power is 0-50W, which is used for slight ion bombardment, thereby increasing the density of the silicon dioxide film. By precisely controlling the bias power, not only can the deposition quality of the silicon dioxide layer 300 be effectively improved, but damage to the aluminum oxide layer 200 can also be reduced. In this embodiment, the bias power is preferably 0W.

[0068] The packaging environment temperature is room temperature to 80°C; in this embodiment, the packaging environment temperature is room temperature.

[0069] The pressure inside the vacuum deposition chamber is 0.1 to 30 Pa. In this embodiment, the pressure inside the vacuum deposition chamber is preferably 10 Pa, as lower pressure is more conducive to uniform deposition.

[0070] More specifically, in this embodiment, when depositing the silicon dioxide layer 300 using ICP-PECVD technology, the reaction gases used in the deposition process include a silicon source, an oxidant, and an inert carrier gas. The silicon source is preferably SiH4. In other parallel embodiments, the silicon source may also be TEOS (tetraethyl orthosilicate) to suit lower deposition temperatures. The oxidant is N2O or O2; the inert gas is Ar or N2. By precisely controlling the N2O / SiH4 ratio, the stoichiometry and stress of the silicon dioxide layer 300 can be adjusted, thereby achieving film quality that typically requires high temperatures to obtain at low temperatures.

[0071] The silica layer 300 deposited using the above technique has a thickness of 20–100 nm, and the water-oxygen permeability (WVTR) is expected to be <10. -5 g / m 2 The density is on the order of / day, or even lower; the refractive index is approximately 1.46, which is closer to the quality of thermally oxidized silica. The silica layer 300 produced by ICP-PECVD technology is extremely dense, providing excellent water and oxygen barrier protection. Moreover, the silica layer 300 is transparent and does not absorb sunlight, ensuring that sunlight passes through the alumina layer 200 and the silica layer 300 and is absorbed by the perovskite light-absorbing layer 3.

[0072] Specifically, in this embodiment, in step S3, the deposition cycle of the alumina layer 200 and the silicon dioxide layer 300 is repeated 2 to 5 times, so that the composite barrier layer can form a denser stacked structure, thereby achieving a better barrier effect against water and oxygen. In addition, limiting N to between 2 and 5 avoids the problem of insufficient barrier layer density and easy water and oxygen penetration caused by too few alternating deposition cycles (N<2), while avoiding the risk of film cracking caused by excessive composite layer thickness and interface stress accumulation due to too many cycles (N>5).

[0073] Optionally, in this embodiment, step S0 is included before step S1, and step S0 includes:

[0074] S01, a conductive substrate layer 1 and a hole transport layer 2 are sequentially deposited;

[0075] S02. Prepare an encapsulation environment with a temperature of <80℃, and deposit a barrier encapsulation layer 110 on the side of the hole transport layer 2 away from the conductive substrate layer 1.

[0076] S03. A perovskite layer, an electron transport layer 4, and a counter electrode layer 5 are sequentially deposited on the side of the barrier encapsulation layer 110 away from the hole transport layer 2 to obtain a perovskite solar cell device 100.

[0077] With the above configuration, after completing the conductive substrate layer 1 and the hole transport layer 2, the perovskite solar cell device 100 first deposits a barrier encapsulation layer 110 on the surface of the hole transport layer 2, and then sequentially deposits a perovskite light absorption layer 3, an electron transport layer 4, a counter electrode layer 5, and a composite barrier layer composed of an alumina layer 200 and a silicon dioxide layer 300 on the surface of the barrier encapsulation layer 110, thereby achieving a "sandwich" all-round encapsulation, and thus providing the ultimate water and oxygen barrier protection for the perovskite light absorption layer 3.

[0078] Specifically, in this embodiment, the barrier encapsulation layer 110 is made of silicon dioxide, and its thickness is 5–20 nm. The barrier encapsulation layer 110 formed from silicon dioxide has high density, which can physically block the bidirectional migration of halide ions in the perovskite and metal electrode atoms, thereby significantly improving the operational stability of the battery device. Furthermore, the barrier encapsulation layer 110 formed from silicon dioxide is transparent and does not absorb sunlight, thus having a very low impact on the battery's short-circuit current. In addition, the barrier encapsulation layer 110 formed from silicon dioxide has some shortcomings in toughness. Although the barrier encapsulation layer 110 is relatively brittle, its ultra-thin design allows it to withstand a certain degree of bending.

[0079] Optionally, in this embodiment, the barrier encapsulation layer 110 is deposited using ICP-PECVD. The process and principle of depositing the barrier encapsulation layer 110 are similar to those of depositing the silicon dioxide layer 300. The specific differences lie in the source power, bias power, substrate temperature, chamber pressure, and reactant gas ratio of the ICP. By precisely controlling the above process parameters, a barrier encapsulation layer 110 with different thickness, water and oxygen permeability, and refractive index than the silicon dioxide layer 300 can be obtained.

[0080] In summary, combining Figure 5 and Figure 6 As shown, the perovskite solar cell composed of a barrier encapsulation layer 110 and a composite encapsulation layer formed by combining an alumina layer 200 and a silicon dioxide layer 300 exhibits a key performance indicator, PCE, that far exceeds the nearly 3% cell efficiency of the control group. Furthermore, the PCE tracking test data of the comparative group and Example 1 show that the perovskite solar cell prepared using this encapsulation method shows almost no decrease in photoelectric degradation efficiency after 400 hours, thereby greatly improving the stability of the perovskite solar cell.

[0081] This embodiment also provides a solar cell, fabricated using the above-described perovskite solar cell internal encapsulation method, referencing... Figure 7 As shown, the battery includes a perovskite solar cell device 100 and an N-layer composite encapsulation layer. Each composite encapsulation layer in the N-layer composite encapsulation layer is stacked on top of the perovskite solar cell device 100. Each composite encapsulation layer includes an alumina layer 200 and a silicon dioxide layer 300, arranged sequentially away from the perovskite solar cell device 100 and located in the composite encapsulation layer closest to the perovskite solar cell device 100. The alumina layer 200 is sandwiched between the silicon dioxide layer 300 and the counter electrode layer 5 of the perovskite solar cell device 100; where N is a positive integer not less than 2.

[0082] Through the above configuration, the composite encapsulation layer closest to the counter electrode layer 5 of the solar cell can form a stable connection with the interface between the alumina layer 200 and the counter electrode layer 5, thereby preventing the composite encapsulation layer from peeling off from the device. The outermost silicon dioxide layer 300 of the composite encapsulation layer possesses excellent weather resistance and hydrophobicity, further blocking the intrusion of water and oxygen from the environment. Moreover, the alumina layer 200 and the silicon dioxide layer 300 have small differences in lattice parameters; their alternating stacking can fill lattice defects and eliminate permeation channels for water and oxygen molecules. Compared to a single composite encapsulation layer, the water and oxygen barrier efficiency is higher, effectively improving the water and oxygen barrier performance of the solar cell. Furthermore, the entire production process of this solar cell can be carried out at temperatures below 80°C, avoiding the impact of high temperatures on the perovskite light-absorbing layer 3, thereby further improving the production quality and safety of the solar cell and extending its lifespan.

[0083] Optionally, N is 2 to 5. Preferably, in this embodiment, N=3.

[0084] Specifically, in this embodiment, the perovskite solar cell device 100 includes a conductive substrate layer 1, a hole transport layer 2, a barrier encapsulation layer 110, a perovskite light absorption layer 3, an electron transport layer 4, and a counter electrode layer 5. Specifically, the conductive substrate layer 1 includes a substrate 11 and a transparent conductive electrode layer 12. The substrate 11 serves to support the entire battery structure and provides mechanical support and light transmission. It is preferably made of glass. The transparent conductive electrode layer 12 collects the charge carriers generated by the battery and allows sunlight to enter the perovskite light-absorbing layer 3. The hole transport layer 2 is deposited on the conductive substrate layer 1. The barrier encapsulation layer 110 is deposited on the hole transport layer 2 and sandwiched between the conductive substrate layer 1 and the barrier encapsulation layer 110. The perovskite light-absorbing layer 3 is deposited on the barrier encapsulation layer 110 and sandwiched between the hole transport layer 2 and the perovskite light-absorbing layer 3. The electron transport layer 4 is deposited on the perovskite light-absorbing layer 3 and sandwiched between the barrier encapsulation layer 110 and the electron transport layer 4. The counter electrode layer 5 is deposited on the electron transport layer 4 and sandwiched between the electron transport layer 4 and the N-layer composite encapsulation layer.

[0085] With the above configuration, in this embodiment, a composite encapsulation layer and a barrier encapsulation layer 110 are respectively provided on the upper and lower sides of the perovskite light absorption layer 3. The composite encapsulation layer is composed of an alumina layer 200 and a silicon dioxide layer 300 stacked together, which can prevent water and oxygen from penetrating into the perovskite light absorption layer 3 from the side of the counter electrode layer 5. The barrier encapsulation layer 110 is disposed opposite to the composite encapsulation layer on both sides of the perovskite light absorption layer 3, and can prevent water and oxygen from penetrating into the perovskite light absorption layer 3 from the side of the transparent conductive electrode layer 12. This greatly reduces or even eliminates the influence of water and oxygen on the perovskite material, ensures the stability of the crystal structure of the perovskite light absorption layer 3, avoids phenomena such as ion migration caused by water and oxygen erosion, and thus ensures the stability and good photoelectric conversion efficiency of the solar cell during long-term operation.

[0086] Optionally, in the solar cell provided by this application, the material of the barrier encapsulation layer 110 is silicon dioxide or aluminum oxide. Preferably, in this embodiment, the material of the barrier encapsulation layer 110 is silicon dioxide, which has better hydrophobicity than aluminum oxide and stronger barrier ability against environmental moisture. It will not only avoid side reactions with the hole transport layer 2 or the perovskite light absorption layer 3, but also effectively isolate corrosive substances such as water vapor, oxygen and dust in high humidity environments, thereby effectively ensuring the sealing of the perovskite light absorption layer 3 towards the transparent conductive electrode layer 12.

[0087] Optionally, in the solar cell provided in this application, the hole transport layer 2 is made of organic hole transport material or inorganic hole transport material, wherein the organic hole transport material includes one or more of Spiro-OMeTAD, PTAA (polytriarylamine), and P3HT (poly-3-hexylthiophene), and the inorganic hole transport material includes NiO. x One or more of nickel oxide, cuprous oxide (Cu₂O), and cuprous thiocyanate (CuSCN). Preferably, in this embodiment, the hole transport layer 2 is NiO. x NiO was prepared using a magnetron sputtering PVD device. x Thin film, NiO x The thickness of the thin film can be 5–25 nm, for example, 10 nm.

[0088] Optionally, in the solar cell provided in this application, the perovskite light-absorbing layer 3 is a compound with the structural formula "ABX3", wherein: A is one or more of H, N=CHNH3, CH3NH3, and Cs; B is one or more of Pb and Sn; and X is one or more of I, Br, and Cl. Preferably, in this embodiment, the perovskite light-absorbing layer 3 is prepared by slot coating or spin coating, and a perovskite light-absorbing layer 3 film with a thickness of 300-600 mm can be obtained after preparation. The thickness of the film is 300 mm.

[0089] Optionally, in the solar cell provided in this application, the electron transport layer 4 includes at least one of an organic electron transport material and a non-polar electron transport material. The organic electron transport material includes C... 60 One or more of PCBM and BCP, and inorganic electron transport materials including SnO. x At least one of TiO2 and C. Preferably, in this embodiment, the electron transport layer 4 is made of C. 60 +SnO x The thickness of electron transport layer 4 is preferably 10 ± 10 nm, and C is prepared using an evaporation deposition apparatus. 60 Thin film, SnO preparation using atomic deposition equipment x Thin film, C 60 &SnO x The film thickness can be 10–30 nm, for example 15 nm.

[0090] Optionally, in the solar cell provided in this application, the counter electrode layer 5 includes a composite thin film, which is composed of a transparent conductive film and a metal thin film. The transparent conductive film is made of one or more of ITO, IZO, and IGZO; the metal thin film is made of any one of copper, gold, and silver. Preferably, in this embodiment, the counter electrode layer 5 is made of an ITO+Cu thin film combination with a thickness of 30+80 nm. The ITO&Cu thin film is prepared using a magnetron sputtering PVD device, and the thickness of the ITO&Cu thin film can be 10-200 nm. In this case, the thickness of the ITO&Cu thin film is preferably 100 nm.

[0091] In the description of this specification, references to terms such as "some embodiments," "other embodiments," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0092] Obviously, the above embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the implementation of the present invention. Those skilled in the art will be able to make various obvious changes, readjustments, and substitutions without departing from the scope of protection of the present invention. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the scope of protection of the claims of the present invention.

Claims

1. A method for internal encapsulation of perovskite solar cells, characterized in that, include: S1. Prepare perovskite solar cell devices (100). S2. Prepare for an encapsulation environment temperature of <80℃. Sequentially deposit an aluminum oxide layer (200) and a silicon dioxide layer (300) on the outer surface of the counter electrode layer (5) of the perovskite solar cell device (100). S3. Repeat step S2 at least once.

2. The method for internal encapsulation of a perovskite solar cell according to claim 1, characterized in that, The process begins with step S0 before S1, which includes: S01, a conductive substrate layer (1) and a hole transport layer (2) are deposited sequentially. S02. Prepare an encapsulation environment temperature < 80°C, and deposit a barrier encapsulation layer (110) on the side of the hole transport layer (2) away from the conductive substrate layer (1). S03. On the side of the barrier encapsulation layer (110) away from the hole transport layer (2), a perovskite light absorption layer (3), an electron transport layer (4) and a counter electrode layer (5) are deposited in sequence to obtain the perovskite solar cell device (100).

3. The method for internal encapsulation of a perovskite solar cell according to claim 2, characterized in that, The barrier encapsulation layer (110) is made of silicon dioxide.

4. The method for internal encapsulation of a perovskite solar cell according to claim 3, characterized in that, The silicon dioxide layer (300) and the barrier encapsulation layer (110) are prepared using inductively coupled plasma-enhanced chemical vapor deposition (ICP-CCVD); and / or, the aluminum oxide layer (200) is prepared using atomic deposition (ALD) equipment.

5. The method for internal encapsulation of a perovskite solar cell according to claim 4, characterized in that, The source power of inductively coupled plasma is 300-3000W; And / or, the bias power is 0-50W; And / or, the packaging environment temperature is room temperature - 80°C; And / or, the pressure inside the vacuum deposition chamber is 0.1-30 Pa.

6. The method for internal encapsulation of a perovskite solar cell according to claim 1, characterized in that, In step S3, the repetition cycle is 2-5 times.

7. A solar cell, manufactured using the internal encapsulation method for perovskite solar cells according to any one of claims 1-6, characterized in that, include: Perovskite solar cell device (100). N composite encapsulation layers are stacked on the perovskite solar cell device (100). Each composite encapsulation layer includes an alumina layer (200) and a silicon dioxide layer (300). The alumina layer (200) and the silicon dioxide layer (300) are arranged sequentially in a direction away from the perovskite solar cell device (100) and are located in the composite encapsulation layer closest to the perovskite solar cell device (100). The alumina layer (200) is sandwiched between the silicon dioxide layer (300) and the counter electrode layer (5) of the perovskite solar cell device (100). Wherein, N is a positive integer not less than 2.

8. The solar cell according to claim 7, characterized in that, The perovskite solar cell device (100) includes: Conductive substrate layer (1); Hole transport layer (2), wherein the hole transport layer (2) is deposited on the conductive substrate layer (1); A barrier encapsulation layer (110) is deposited on the hole transport layer (2), and the hole transport layer (2) is sandwiched between the conductive substrate layer (1) and the barrier encapsulation layer (110). A perovskite light absorption layer (3) is deposited on the barrier encapsulation layer (110), and the barrier encapsulation layer (110) is sandwiched between the hole transport layer (2) and the perovskite light absorption layer (3). An electron transport layer (4) is deposited on the perovskite light absorption layer (3), and the perovskite light absorption layer (3) is sandwiched between the barrier encapsulation layer (110) and the electron transport layer (4). Counter electrode layer (5) is deposited on the electron transport layer (4) and sandwiched between the electron transport layer (4) and the N-layer composite encapsulation layer.

9. The solar cell according to claim 8, characterized in that, The hole transport layer (2) is made of organic or inorganic hole transport materials. The organic hole transport materials include one or more of Spiro-OMeTAD, PTAA, and P3HT, and the inorganic hole transport materials include NiO. x One or more of Cu2O and CuSCN; The perovskite light-absorbing layer (3) adopts a compound with the structural formula "ABX3", wherein: A adopts one or more of H, N=CHNH3, CH3NH3 and Cs, B adopts one or more of Pb and Sn, and X adopts one or more of I, Br and Cl; The electron transport layer (4) comprises at least one of organic electron transport materials and inorganic electron transport materials, wherein the organic electron transport material comprises C 60 One or more of PCBM and BCP, wherein the inorganic electron transport material includes SnO. x and at least one of TiO2; The counter electrode layer (5) includes a composite film, which is composed of a transparent conductive film and a metal film. The transparent conductive film is made of one or more of ITO, IZO, and IGZO, and the metal film is made of any one of copper, gold, and silver. The barrier encapsulation layer (110) is made of silicon dioxide or aluminum oxide.

10. The solar cell according to claim 7, characterized in that, The value of N is 2-5.

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