Exposure device

Abstract

The exposure device exposes a pattern onto a substrate, and is provided with: a holding unit that holds a mask or the substrate on which the pattern is formed; an X-ray ion generator that emits X-rays to eliminate static electricity on the mask or the substrate; a shutter that shields the irradiation of the X-rays to the mask or the substrate; and a first control unit that controls the opening and closing of the shutter. The first control unit controls the opening of the shutter at a timing at which the mask or the substrate moves relative to the holding unit.

Description

Technical Field

[0001] This invention relates to an exposure apparatus. Background Technology

[0002] In the photolithography process for manufacturing semiconductor components and liquid crystal display components, in order to transfer the pattern formed on the mask or reticle onto the glass substrate or wafer via a projection optical system, for example, step-repeat projection exposure equipment (so-called step lithography machine) or step-scan projection exposure equipment (so-called step-scan lithography machine (also known as scanner)) are mainly used.

[0003] In such exposure apparatus, various electrostatic countermeasures are employed to eliminate static electricity on the substrate (e.g., Patent Document 1).

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2000-21726 Summary of the Invention

[0007] According to the first disclosure, an exposure apparatus exposes a pattern onto a substrate. The exposure apparatus includes: a holding portion for holding a mask or substrate on which the pattern is formed; an X-ray ion generator for emitting X-rays to eliminate static electricity on the mask or substrate; a shield for shielding the mask or substrate from X-ray irradiation; and a first control unit for controlling the opening and closing of the shield, the first control unit controlling the opening of the shield at a timing when the mask or substrate moves relative to the holding portion.

[0008] It should be noted that the structure of the embodiments described below can be appropriately modified, and at least a portion can be replaced with other structures. Furthermore, the constituent elements whose configuration is not particularly limited are not limited to the configuration disclosed in the embodiments, but can be configured in positions that enable their functions. Attached Figure Description

[0009] Figure 1 This is a schematic diagram showing the structure of the exposure apparatus according to the embodiment.

[0010] Figure 2 This is a schematic diagram showing the structure of the static eliminator unit.

[0011] Figure 3 (A) and Figure 3 (B) is a graph showing the time variation of the output of the soft X-ray ion generator during the destatic discharge period.

[0012] Figure 4 This is a timeline used to illustrate the control of a soft X-ray ion generator that is not housed in a housing.

[0013] Figure 5 (A) and Figure 5 (B) is a time diagram illustrating another example of control for a soft X-ray ion generator not housed in a housing.

[0014] Figure 6 This is a timeline used to illustrate the control in this embodiment.

[0015] Figure 7 This is a schematic diagram showing the structure of the housing of the static elimination unit in a modified example. Detailed Implementation

[0016] based on Figures 1-6 An exposure apparatus EX according to one embodiment will be described. Figure 1 This is a diagram that schematically illustrates the structure of an exposure apparatus EX according to one embodiment.

[0017] Exposure apparatus EX is used, for example, in the manufacture of organic EL displays to form TP (Touch Panel) circuits or CF (Color Filter) circuits on the upper surface of substrate P. Substrate P is obtained, for example, by forming TFTs (Thin Film Transistors) on a glass substrate through evaporation and then performing a sealing process, but is not limited to this.

[0018] The exposure apparatus EX includes an exposure main body 100 and a box-shaped, highly airtight chamber CMB mounted on the floor F. The chamber CMB has an opening OPN, and an opening / closing part SH is provided to cover the opening OPN. The opening / closing part SH is, for example, a shutter or a door, and moves, for example, in the direction of arrow AR3 to open / close the opening OPN.

[0019] The exposure body 100 includes an illumination system 112, a mask stage 114 for holding a mask M on which circuit patterns are formed, a projection optical system 116, an optical platform 118, a substrate stage device 120 for holding a substrate P, an anti-static unit 200, and a control device CNT.

[0020] Hereinafter, the direction in which the mask M and the substrate P are scanned relative to the projection optical system 116 during exposure will be defined as the X-axis direction, the direction orthogonal to the X-axis in the horizontal plane will be defined as the Y-axis direction, and the direction orthogonal to both the X-axis and the Y-axis will be defined as the Z-axis direction. Furthermore, the directions of rotation (tilt) around the X-axis, Y-axis, and Z-axis will be defined as the θx, θy, and θz directions, respectively.

[0021] The lighting system 112 is configured, for example, to be the same as the lighting system disclosed in U.S. Patent No. 5,729,331. The lighting system 112 illuminates the mask M with light emitted from a light source (e.g., a mercury lamp) that is not shown, through a reflector (not shown), a dichroic mirror, a shutter, a wavelength selective filter, various lenses, etc., as exposure illumination light (illumination light) IL.

[0022] The mask stage 114 holds the transparent mask M. The mask stage 114 drives the mask M with a predetermined stroke in the X-axis direction (scanning direction) relative to the illumination system 112 (illumination light IL), for example, via a drive system (not shown) including a linear motor, and performs minute drives on the mask M in the Y-axis and θz directions. The position information of the mask M in the horizontal plane is obtained, for example, by a mask stage position measurement system (not shown) including a laser interferometer or an encoder.

[0023] The projection optical system 116 is disposed below the mask stage 114. The projection optical system 116 is, for example, a so-called multi-lens projection optical system with the same structure as the projection optical system disclosed in U.S. Patent No. 6,552,775, etc., and includes multiple optical systems that form an upright image using a dual-telecentric equal magnification system.

[0024] In the exposure body 100, when the illumination area on the mask M is illuminated by the illumination light IL from the illumination system 112, a projected image (partially upright image) of the circuit pattern of the mask M within the illumination area is formed on the substrate P on the illumination area (exposure area) of the illumination light conjugate to the illumination area by the illumination light passing through the mask M via the projection optical system 116. Then, the mask M is moved relative to the illumination area (illumination light IL) in the scanning direction, and the substrate P is moved relative to the exposure area (illumination light IL) in the scanning direction, thereby performing scanning exposure on an exposure area on the substrate P, and transferring the pattern formed on the mask M to the exposure area.

[0025] The optical platform 118 supports the aforementioned mask stage 114 and projection optical system 116.

[0026] The substrate stage device 120 is used to position the substrate P with high precision relative to the projection optical system 116 (illumination light IL), and includes a substrate holding part 121 for holding the substrate P and a substrate stage 122.

[0027] The substrate stage 122 is driven by a drive device (not shown) along a horizontal plane (X-axis and Y-axis directions) for a predetermined stroke, and performs minute actuation in six degrees of freedom directions. The structure of the substrate stage device 120 is not particularly limited. For example, it is preferable to use a stage device with a so-called coarse-fine motion structure disclosed in Japanese Patent Application Publication No. 2004-14915 or U.S. Patent Application Publication No. 2012 / 0057140, which includes a gantry-type two-dimensional coarse motion stage and a minute motion stage that is minutely driven relative to the two-dimensional coarse motion stage.

[0028] An X-moving mirror (bar mirror) 124X with a reflective surface orthogonal to the X-axis is fixed on the -X side of the substrate stage 122, and a Y-moving mirror (not shown) with a reflective surface orthogonal to the Y-axis is fixed on the +Y side.

[0029] A first and a second laser interferometer (not shown) are mounted on an optical platform 118. The first and second laser interferometers measure the position of the substrate holding portion 121 of the substrate P in the X-axis direction and the position in the Y-axis direction, respectively.

[0030] The first laser interferometer illuminates a measurement beam onto the X-axis moving mirror 124X and an X-axis fixed mirror (not shown) fixed near the projection optical system 116. The first laser interferometer measures the position information of the substrate holding part 121 in the X-axis direction with the position of the X-axis fixed mirror as a reference.

[0031] Additionally, the second laser interferometer illuminates a measurement beam onto a Y-moving mirror (not shown) and a Y-fixed mirror (not shown) fixed near the projection optical system 116. The second laser interferometer measures the position information of the substrate holding section 121 in the Y-axis direction based on the position of the Y-fixed mirror.

[0032] The control device CNT drives the substrate stage 122 based on the position information (including rotation information (rotation amount (rotation amount θz in the θz direction), pitch amount (rotation amount θy in the θy direction), and roll amount (rotation amount θx in the θx direction)) of the substrate stage 122 in the XY plane measured by the first laser interferometer and the second laser interferometer.

[0033] In the exposure unit 100, alignment measurements (e.g., EGA) are performed before exposure, and the substrate P is exposed according to the following steps based on the results. First, the mask stage 114 and the substrate stage 122 are driven synchronously in the X-axis direction according to the instructions of a control device (not shown). This results in scanning exposure of the first exposure area on the substrate P. When the scanning exposure of the first exposure area is completed, the control device (not shown) moves the substrate stage 122 to a position corresponding to the second exposure area (stepping). Then, the second exposure area is scanned and exposed. The control device (not shown) similarly repeats the stepping of the substrate P between exposure areas and the scanning exposure of the exposure areas, thereby transferring the pattern of the mask M to all exposure areas on the substrate P.

[0034] After the exposure process is completed, when the exposed substrate P, which is placed on the substrate holding section 121, is removed (separated, peeled off) from the substrate holding section 121, the substrate P is prone to static electricity. If the static electricity on the substrate P discharges, there is a risk that devices such as TFTs formed on the substrate P may be damaged due to the discharge phenomenon. Therefore, in order to eliminate the static electricity on the substrate P, an antistatic unit 200 is provided in the exposure body section 100. It should be noted that in this embodiment, when the substrate P before exposure is placed on the substrate holding section 121, the static electricity on the substrate P is also eliminated by the antistatic unit 200.

[0035] Figure 2 This is a schematic diagram showing the structure of the static eliminator unit 200. The static eliminator unit 200 includes a soft X-ray ion generator 201 that emits soft X-rays and a housing 210 that houses the soft X-ray ion generator 201.

[0036] The soft X-ray ion generator 201 uses a wavelength of 1.3 × 10⁻⁶, different from the illumination light IL. -4 ~4.1×10 -4 The μm light, or soft X-ray, electrostatic eliminator generates a high concentration of ions within the irradiation range through the ionizing effect of soft X-rays, instantly eliminating static electricity from charged objects. When soft X-rays are emitted from the soft X-ray ion generator 201, electrons are ejected from stable atoms and molecules located in and around the soft X-ray beam path, generating positive ions. Then, the ejected electrons attach to stable atoms and molecules, generating negative ions. Because positive and negative ions are generated in such a uniform and balanced manner in all areas irradiated by the soft X-rays or around the beam path, positive or negative ions generated near the substrate P absorb the charge of the substrate P, thus eliminating static electricity from the substrate P. On the other hand, other generated ions return to their original stable state.

[0037] The housing 210 has an opening 210a through which soft X-rays emitted by the soft X-ray ion generator 201 pass, and a shield 210b covering the opening 210a. The housing 210 is formed of a material that does not transmit soft X-rays.

[0038] The shield 210b, like the housing 210, is made of a material that does not transmit soft X-rays. In this embodiment, the shield 210b moves in the direction of arrow AR1 to open / close the opening 210a. When the shield 210b covers (closes) the opening 210a, it blocks the irradiation of soft X-rays onto the substrate P. That is, the shield 210b functions as a shielding component to block the irradiation of soft X-rays onto the substrate P.

[0039] The opening / closing of the shield 210b is controlled by the control device CNT. During the period of eliminating static electricity on the substrate P, the control device CNT opens the opening 210a of the housing 210 to irradiate the substrate P with soft X-rays. Specifically, the control device CNT opens the opening 210a by controlling the opening of the shield 210b at the timing of the substrate P being peeled off from the substrate holding portion 121 (the timing of the relative movement of the substrate P relative to the substrate holding portion 121). Thus, soft X-rays are irradiated onto the substrate P. When the period of eliminating static electricity on the substrate P ends, the control device CNT closes the opening 210a using the shield 210b.

[0040] Furthermore, the on / off state of the soft X-ray ion generator 201 is controlled by the control device CNT. The control device CNT turns on the soft X-ray ion generator 201 before the timing for initiating electrostatic discharge. More specifically, the control device CNT turns on the soft X-ray ion generator 201 a predetermined time before the timing for initiating electrostatic discharge, so that the output of the soft X-ray ion generator 201 becomes a predetermined output at the timing for initiating electrostatic discharge. The predetermined output is, for example, the maximum output (100%) or the output obtained stably by turning on the soft X-ray ion generator 201. Generally, the control of the soft X-ray ion generator is only on / off, and the output level cannot be adjusted. However, if the output level of the soft X-ray ion generator 201 can be adjusted, the output of the soft X-ray ion generator 201 does not necessarily have to be the maximum output (100%). For example, the predetermined output could also be 98% of the output. The predetermined output is simply the output that eliminates the electrostatic charge on the substrate P to below a predetermined value during the time the substrate P is irradiated with soft X-rays (during the electrostatic discharge period). The static elimination period can be adjusted in relation to the tap time or plate processing time. If the output of the soft X-ray ion generator 201 is insufficient, a longer static elimination period can be ensured by extending the tap time or plate processing time, thereby eliminating static electricity from the substrate P to an appropriate level. Therefore, the soft X-ray ion generator 201 only needs to have an output capable of eliminating static electricity from the substrate P to an acceptable level within an acceptable tap time or plate processing time. Furthermore, the following explanation addresses the case where the output is at its maximum.

[0041] Figure 3 (A) and Figure 3 (B) is a graph showing the time variation of the output of the soft X-ray ion generator 201 and P1 during the destatic discharge period. Figure 3 In (A), when the soft X-ray ion generator 201 is turned on at time T1, the output of the soft X-ray ion generator 201 gradually increases over time and reaches its maximum output at time T2.

[0042] Here, the period for eliminating static electricity on substrate P is set as P1, such as... Figure 3 As shown in (A), if the soft X-ray ion generator 201 is turned on at the beginning of period P1, there is a period when the output is not at its maximum (between time T1 and time T2). Therefore, there is a risk that the static electricity on the substrate P will not be sufficiently eliminated.

[0043] Therefore, as Figure 3As shown in (B), in order to make the output of the soft X-ray ion generator 201 reach its maximum output from the start of period P1, for example, it is possible to turn on the soft X-ray ion generator 201 at a time T3 that is a predetermined time earlier than period P1, and to perform electrostatic elimination from the time T4 when the output reaches its maximum output.

[0044] Figure 4 This is a timeline showing an example of control performed by the exposure apparatus EX when the soft X-ray ion generator 201 is not housed in the housing 210.

[0045] Figure 4 The diagram illustrates the situation where the soft X-ray ion generator 201 is switched off while the opening / closing section SH of the chamber CMB is open. (As shown...) Figure 4 As shown, the opening and closing part SH is opened during the period (t10~t11) when the exposed substrate P is moved out of the chamber CMB and the unexposed substrate P is moved into the chamber CMB. At this time, if the soft X-ray ion generator 201 is in the open state, there is a risk of soft X-rays leaking out of the chamber CMB. Therefore, the soft X-ray ion generator 201 is turned off.

[0046] Then, at time t11, when the loading of the substrate P into the chamber CMB before exposure is completed, the opening / closing part SH is closed and the soft X-ray ion generator 201 is turned on. Then, when the substrate P is mounted on the substrate holding part 121, static electricity removal is performed on the substrate P (t11~t12). During this time, the output of the soft X-ray ion generator 201 gradually increases from time t11 and reaches its maximum output, but there are periods during the static electricity removal period (t11~t12) during which the output is not at its maximum. Therefore, there is a risk that the static electricity removal from the substrate P may be insufficient.

[0047] After the exposure process, when the substrate P is removed from the substrate holding section 121, a static electricity removal process is also performed on the substrate P (t13~t14). During the exposure period, since the soft X-ray ion generator 201 remains on, soft X-rays can be irradiated onto the substrate P at the start of static electricity removal with maximum output.

[0048] After being removed from the substrate holding section 121, the exposed substrate P is moved out of the chamber CMB. In order to move the exposed substrate P out of the chamber CMB and move the unexposed substrate P into the chamber CMB, the opening / closing section SH of the chamber CMB is opened at time t14. At this time, if the soft X-ray ion generator 201 is in the on state, there is a risk of soft X-rays leaking out of the chamber CMB. Therefore, the soft X-ray ion generator 201 is turned off.

[0049] Thus, if the soft X-ray ion generator 201 is turned off during the period when the opening and closing part SH of the chamber CMB is open, there will be a period during the static elimination period after the substrate P is moved out / in that the output of the soft X-ray ion generator 201 is not at its maximum output. Therefore, there is a risk of insufficient static elimination.

[0050] Figure 5 (A) and Figure 5 (B) is a time diagram showing another example of control performed by the exposure apparatus EX when the soft X-ray ion generator 201 is not housed in the housing 210. Figure 5 (A) and Figure 5 (B) shows the case where the soft X-ray ion generator 201 is turned on in advance so that the output of the soft X-ray ion generator 201 is at its maximum output at the start of the electrostatic elimination process.

[0051] First of all, Figure 5 Please explain the situation in (A). Figure 5 In the control shown in (A), in order to make the output of the soft X-ray ion generator 201 reach its maximum output at the start of the electrostatic discharge process of the substrate P mounted on the substrate holding part 121 (time t22), the soft X-ray ion generator 201 is turned on at time t21 during the period when the opening and closing part SH of the chamber CMB is open (time t20 to time t22). As a result, since the output of the soft X-ray ion generator 201 reaches its maximum output at the start of the electrostatic discharge process of the substrate P (time t22), the static electricity carried on the substrate P can be sufficiently eliminated.

[0052] However, in Figure 5 In (A), since the soft X-ray ion generator 201 is turned on while the opening and closing part SH of the chamber CMB is open, there is a risk of soft X-rays leaking out of the chamber CMB. In this case, an area larger than the chamber CMB must be designated as the X-ray management area, and the management of personnel entering the X-ray management area becomes complicated.

[0053] exist Figure 5 In (B), to prevent soft X-rays from leaking out of the chamber CMB, the soft X-ray ion generator 201 is turned on at time t31 when the opening / closing part SH of the chamber CMB is closed, and electrostatic elimination processing begins at time t32 when the output of the soft X-ray ion generator 201 reaches its maximum output. However, in this case, the overall processing capacity of the exposure apparatus EX is reduced because of the standby time that occurs until the output of the soft X-ray ion generator 201 reaches its maximum output.

[0054] Therefore, in this embodiment, the soft X-ray ion generator 201 is housed in the housing 210 to prevent a decrease in productivity and an expansion of the X-ray management area, and to effectively eliminate static electricity on the substrate P.

[0055] In this embodiment, the soft X-ray ion generator 201 is turned on in advance or always turned on so that its output is at its maximum at the start of the static elimination period P1.

[0056] Figure 6 This is a time diagram illustrating an example of the control in the exposure apparatus EX of this embodiment.

[0057] exist Figure 6 During the process of moving the exposed substrate P out of the chamber CMB and moving the unexposed substrate P into the chamber CMB (time t0 to time t2), the opening and closing section SH is opened. The control device CNT activates the soft X-ray ion generator 201 at time t1 during the time the substrate P is moved in and out (time t0 to time t2). The control device CNT activates the soft X-ray ion generator 201 before a predetermined time for starting electrostatic discharge, so that the output of the soft X-ray ion generator 201 is at its maximum output at the time when the electrostatic discharge of the substrate P mounted on the substrate holding section 121 begins. Here, the predetermined time refers, for example, the time required from when the soft X-ray ion generator 201 is activated until it reaches its maximum output.

[0058] In addition, during the period of moving the substrate P in and out (time t0 to time t2), the control device CNT uses a shield 210b to cover the opening 210a of the housing 210.

[0059] Then, when the electrostatic discharge process of the substrate P mounted on the substrate holding section 121 begins (time t2), the control device CNT controls the opening of the shield 210b to open the opening 210a of the housing 210. As a result, since soft X-rays are irradiated onto the substrate P at maximum output, the static electricity carried on the substrate P can be sufficiently eliminated.

[0060] When the exposure process is started, the control device CNT closes the mask 210b, covering the opening 210a of the housing 210 (time t3). It should be noted that the control device CNT can also keep the opening 210a of the housing 210 open while keeping the mask 210b open.

[0061] After the exposure process is completed, when the substrate P is peeled (separated) from the substrate holding section 121 (at time t4), the control device CNT controls the opening of the mask 210b to open the opening 210a of the housing 210. As a result, since soft X-rays are irradiated onto the substrate P when the output is at its maximum, the static electricity carried by the substrate P can be sufficiently eliminated.

[0062] When the electrostatic discharge treatment of substrate P is completed (time t5), the control device CNT closes the shield 210b, covering the opening 210a of the housing 210. This confines the soft X-rays within the housing 210. Afterwards, the opening and closing section SH of the open chamber CMB is used to remove the exposed substrate P and insert the unexposed substrate P.

[0063] In the exposure apparatus EX of this embodiment, while the opening OPN of the chamber CMB is open, the opening 210a of the housing 210 is closed, confining the soft X-rays within the housing 210. Therefore, the soft X-rays do not leak out of the chamber CMB. Furthermore, while the opening 210a of the housing 210 is open, the opening OPN of the chamber CMB is closed. Therefore, the X-ray control area can be set within the chamber CMB.

[0064] Furthermore, the output of the soft X-ray ion generator 201 reaches its maximum output at the start of electrostatic discharge (times t2 and t4). Since the substrate P can be irradiated with soft X-rays at its maximum output (e.g., 100% output), the electrostatic discharge on the substrate P can be sufficiently eliminated.

[0065] Furthermore, in the exposure apparatus EX, during the period when the opening 210a of the housing 210 is closed, the soft X-rays are confined within the housing 210, and the opening / closing part SH of the chamber CMB can be freely opened / closed, thus suppressing the reduction in productivity.

[0066] Thus, in the exposure apparatus EX, since the soft X-ray ion generator 201 is housed in the housing 210 having an opening 210a and a shield 210b that opens / closes the opening 210a, it is possible to prevent the X-ray management area from expanding and productivity from decreasing, and to fully eliminate static electricity from the substrate P.

[0067] It should be noted that, in Figure 6 Alternatively, the soft X-ray ion generator 201 can be turned off at the start of the exposure process (time t5), and then turned on again before a predetermined time before the start of the electrostatic elimination process (time t4). In this way, [the process can be combined with...] Figure 6 Compared to other situations, this can reduce electricity consumption even more.

[0068] As detailed above, according to this embodiment, the exposure apparatus EX includes: a substrate holding portion 121 for holding a substrate P; a soft X-ray ion generator 201 for emitting soft X-rays to eliminate static electricity on the substrate P; a shield 210b for shielding the substrate P from soft X-ray irradiation; and a control device CNT for controlling the opening and closing of the shield 210b. The control device CNT controls the opening of the shield 210b at a timing when the substrate P is peeled (separated) from the substrate holding portion 121. Therefore, compared to the case where the shield 210b is always opened, the soft X-ray irradiation time can be shortened, and thus, the time required to manage soft X-rays in the X-ray management area can be reduced.

[0069] Furthermore, in this embodiment, the control device CNT controls the on / off state of the soft X-ray ion generator 201, and turns on the soft X-ray ion generator 201 before the timing for controlling the opening of the shield 210b. Therefore, compared to the case where the soft X-ray ion generator 201 is turned on at the timing for controlling the opening of the shield 210b, a higher output of soft X-rays can be irradiated onto the substrate P. Thus, compared to the case where the soft X-ray ion generator 201 is turned on at the timing for controlling the opening of the shield 210b, the static electricity carried on the substrate P can be eliminated more efficiently.

[0070] Furthermore, in this embodiment, the control device CNT turns on the soft X-ray ion generator 201 before a predetermined time before the timing of opening the shield 210b, so that the soft X-ray ion generator 201 reaches its maximum output at the timing of opening the shield 210b. Therefore, soft X-rays can be irradiated onto the substrate P at its maximum output, and thus, compared to the case where soft X-rays are irradiated at an output lower than the maximum output, static electricity on the substrate P can be eliminated in a shorter time.

[0071] Furthermore, in this embodiment, the exposure apparatus EX includes a housing 210 that houses the soft X-ray ion generator 201 and has an opening 210a for transmitting soft X-rays, and a shield 210b is provided in the housing 210 to open and close the opening 210a for transmitting soft X-rays. Thus, when the shield 210b is closed, the soft X-rays can be confined within the housing 210.

[0072] In this embodiment, the exposure apparatus EX includes a chamber CMB housing the exposure body 100 for exposing the substrate P, and an opening / closing section SH for opening and closing an opening OPN provided on the chamber CMB. The control device CNT closes the opening 210a of the housing 210 using a baffle 210b while the opening OPN of the chamber CMB is open, to prevent soft X-rays from leaking out of the housing 210. While the opening / closing section SH of the chamber CMB is open, the opening 210a of the housing 210 is closed, confining the soft X-rays within the housing 210; therefore, the soft X-rays do not leak out of the chamber CMB. Thus, the X-ray management area can be set within the chamber CMB.

[0073] It should be noted that, in the above embodiments, in Figure 2 The cover 210b can be moved in the direction of arrow AR1 to open / close the opening 210a, but is not limited to this. Figure 7 This is a diagram showing a modified example of the housing 210 of the static elimination unit 200. (See diagram for example.) Figure 7 As shown, the baffle 210b can also be, for example, as... Figure 7 The opening 210a is opened / closed by rotating about the rotation axis 210c in the direction of arrow AR2.

[0074] Furthermore, in the above embodiment, an example of the static elimination unit 200 eliminating static electricity carried on the substrate P when peeling the substrate P from the substrate holding portion 121 was described. However, the static elimination unit 200 can also eliminate static electricity carried on the mask M when peeling the mask M mounted on the mask stage 114 from the mask stage 114. In this case, it is sufficient to provide the static elimination unit 200 near the mask stage 114.

[0075] Furthermore, in the above embodiment, the soft X-ray ion generator 201 is housed in the housing 210. However, it may not be housed in the housing 210 as long as it can prevent soft X-rays from leaking to the outside during the shielding period. For example, a shield 210b may be installed at the emission outlet of the soft X-ray ion generator 201, completely sealing the emission outlet when the shield 210b is closed. Additionally, in the above embodiment, the soft X-ray ion generator 201 is entirely housed in the housing 210, but the housing 210 may also house a portion of the soft X-ray ion generator.

[0076] Furthermore, in the above embodiments and their variations, the exposure device EX was described as an exposure device using a mask M, but the exposure device EX could also be, for example, a so-called maskless exposure device in which a spatial light modulator is used instead of a mask M to form a pattern.

[0077] In the above embodiments and their variations, the exposure apparatus is described for manufacturing liquid crystal display devices (flat panel displays), but the exposure apparatus can also be used to expose silicon wafers to manufacture semiconductors.

[0078] The above embodiments are preferred embodiments of the present invention, but are not limited thereto. Various modifications can be made without departing from the spirit of the present invention.

[0079] Explanation of reference numerals in the attached figures

[0080] 100 Exposure Main Body

[0081] 114 Mask stage

[0082] 121 Substrate holding section

[0083] 201 Soft X-ray Ion Generator

[0084] 210 Housing

[0085] 210a Opening

[0086] 210b baffle

[0087] EX Exposure Device

[0088] CNT control device

[0089] CMB Chamber

[0090] M mask

[0091] OPN opening

[0092] P substrate

[0093] SH Opening and closing section.

Claims

1. An exposure apparatus for exposing a pattern onto a substrate, The exposure apparatus includes: A holding portion for holding the mask or substrate on which the pattern is formed; An X-ray ion generator that emits X-rays to eliminate static electricity on the mask or the substrate; A shielding plate that blocks the X-rays from irradiating the mask or the substrate; and A first control unit that controls the opening and closing of the baffle. The first control unit controls the opening of the mask at a time when the mask or the substrate moves relative to the holding part.

2. The exposure apparatus according to claim 1, wherein, The first control unit controls the opening of the mask at a time when the mask or the substrate separates from the holding part.

3. The exposure apparatus according to claim 1 or 2, wherein, It includes a second control unit for controlling the on / off state of the X-ray ion generator. The second control unit activates the X-ray ion generator before the first control unit controls the opening of the shield.

4. The exposure apparatus according to claim 3, wherein, The second control unit turns on the X-ray ion generator before the predetermined time when the first control unit controls the opening of the shield, so that the X-ray ion generator has reached the predetermined output at the time when the first control unit controls the opening of the shield.

5. The exposure apparatus according to claim 4, wherein, The specified time is the time required from when the X-ray ion generator is turned on until it reaches the specified output.

6. The exposure apparatus according to claim 4 or 5, wherein, The specified output is the maximum output of the X-ray ion generator.

7. The exposure apparatus according to claim 4 or 5, wherein, The specified output is the output that eliminates the static electricity on the substrate to below a specified value within the time the substrate is irradiated by the X-rays.

8. The exposure apparatus according to any one of claims 1 to 7, wherein, It includes a housing that accommodates the X-ray ion generator and has an opening for transmitting X-rays. The shield is disposed on the housing in such a way that it opens and closes the opening through which the X-rays are transmitted.

9. The exposure apparatus according to claim 8, comprising: A chamber that houses the exposure body for exposing the substrate; and An opening and closing mechanism that opens and closes the opening located in the chamber. The first control unit closes the opening of the housing with the shield while the opening of the chamber is open to prevent the X-rays from leaking out of the housing.

Images