Transparent electrode, solar cell, multi-junction solar cell, solar cell module, and solar power generation system

Abstract

A transparent electrode according to an embodiment of the present invention is mainly composed of a compound containing elements represented by Zn, O, and M0, wherein the elements represented by M0 are dispersed in the compound containing elements represented by Zn, O, and M0 so as to have a dense distribution in the thickness direction.

Description

Technical Field

[0001] This invention relates to transparent electrodes, solar cells, multi-junction solar cells, solar cell modules, and solar power generation systems. Background Technology

[0002] One type of new solar cell uses cuprous oxide (Cu2O) in its light-absorbing layer. Cu2O is a wide-bandgap semiconductor. Because Cu2O is a safe and inexpensive material composed of copper and oxygen, which are abundant on Earth, it is expected to enable high-efficiency and low-cost solar cells.

[0003] Existing technical documents Non-patent literature Non-patent literature 1: YS Lee et al., Adv. Mater. 26 (2014) 4704. Summary of the Invention

[0004] The problem that the invention aims to solve The problem to be solved by the present invention is to provide a transparent electrode with low resistance.

[0005] Methods for solving problems The transparent electrode of the embodiment uses a compound containing elements represented by Zn, O and Mo as the main body, and the elements represented by Mo are dispersed in a sparse-dense distribution in the thickness direction of the compound containing elements represented by Zn, O and Mo. Attached Figure Description

[0006] Figure 1 This is a schematic cross-sectional view of the transparent electrode in the embodiment.

[0007] Figure 2 This is a diagram illustrating the analysis points of the transparent electrode in the implementation method.

[0008] Figure 3 This is a graph showing the concentration of the element represented by M0 in the thickness direction of the transparent electrode at the analysis point of the embodiment.

[0009] Figure 4 This is a schematic cross-sectional view of the solar cell according to the embodiment.

[0010] Figure 5 This is a cross-sectional view of a multi-junction solar cell according to an embodiment.

[0011] Figure 6 This is a perspective view of the solar cell module according to the implementation method.

[0012] Figure 7 This is a cross-sectional view of the solar cell module according to the implementation method.

[0013] Figure 8 This is a schematic diagram of the solar power generation system according to the implementation method.

[0014] Figure 9 This is a schematic diagram of the vehicle used in the implementation method.

[0015] Figure 10 This is a schematic diagram of the flying body in the implementation method.

[0016] Figure 11 This is a schematic diagram of the display device according to the embodiment.

[0017] Figure 12 This is a table relating to the embodiments.

[0018] Figure 13 This is a table relating to the embodiments.

[0019] Figure 14 This is a table relating to the embodiments.

[0020] Figure 15 This is a table relating to the embodiments. Detailed Implementation

[0021] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that, unless otherwise specified, the values ​​represent physical properties at 25°C and 1 atmosphere (atmosphere). Furthermore, "average" refers to the arithmetic mean. Unless otherwise specified, each concentration is the average concentration of the target region or layer. Each layer contains specific elements, such as elements confirmed by SIMS (Secondary Ion Mass Spectrometry), and does not contain specific elements, such as elements that cannot be confirmed by SIMS (elements below the detection limit).

[0022] In the instruction manual, " / " represents the division symbol. However, the " / " in "and / or" means "or". The "·" in the instruction manual represents the multiplication symbol. The "." in the numerical values ​​in the instruction manual represents the decimal point.

[0023] (First Embodiment) The first embodiment relates to a transparent electrode. Figure 1 The diagram shows a schematic cross-sectional view of the transparent electrode. Figure 1 The transparent electrode 10 shown in the schematic cross-sectional view is based on a compound containing elements represented by Zn, O and Mo. Figure 1 This is a cross-sectional view of the transparent electrode 10 along its thickness direction. The transparent electrode 10 is a conductive film that allows infrared and visible light to pass through. The Z-direction is the thickness direction of the transparent electrode 10, and the direction formed by the XY plane is set as the surface direction of the transparent electrode 10.

[0024] The thickness of the transparent electrode 10 is preferably 30 nm or more and 150 nm or less, more preferably 30 nm or more and 100 nm or less, and even more preferably 30 nm or more and 50 nm or less. The thickness of the transparent electrode 10 is determined by cross-sectional observation using an electron microscope or by a height difference measuring instrument.

[0025] The compound containing elements represented by Zn, O, and Mo has Zn, O, and Mo as its main components. Preferably, 95% to 100% of the transparent electrode 10 is a compound containing elements represented by Zn, O, and Mo; more preferably, 98% to 100% of the transparent electrode 10 is a compound containing elements represented by Zn, O, and Mo; and even more preferably, 99% to 100% of the transparent electrode 10 is a compound containing elements represented by Zn, O, and Mo. 100% of the transparent electrode 10 can be composed of compounds containing elements represented by Zn, O, and Mo.

[0026] In compounds containing Zn, O, and elements represented by M0, the element represented by M0 is preferably one or more elements selected from the group consisting of Al, B, and Ga. The element represented by M0 is preferably one element selected from the group consisting of Al, B, and Ga. The element represented by M0 is more preferably Al. The element represented by M0 is preferably B. The element represented by M0 is preferably Ga.

[0027] When the total amount of all elements contained in a compound containing elements represented by Zn, O, and M0 is set to 100 [atomic %], the ratio of the total amount of elements represented by Zn, O, and M0 in the compound containing elements represented by Zn, O, and M0 is preferably 95 [atomic %] or more and 100 [atomic %] or less, more preferably 98 [atomic %] or more and 100 [atomic %] or less, and even more preferably 99 [atomic %] or more and 100 [atomic %] or less. It should be noted that the ratio of the elements contained in the compound containing elements represented by Zn, O, and M0 is determined by analysis using SIMS (Secondary Ion Mass Spectrometry).

[0028] The element represented by M0 is preferably dispersed in a sparse-dense distribution in the thickness direction of the transparent electrode 10 within a compound containing Zn, O, and the element represented by M0. The element represented by M0 is preferably dispersed in a sparse-dense distribution in the thickness direction and / or planar direction of the transparent electrode 10 within a compound containing Zn, O, and the element represented by M0. That is, the element represented by M0 in the transparent electrode 10 is not uniformly dispersed in the compound containing Zn, O, and the element represented by M0, and the concentration is not tilted in one direction. It is preferable that the element represented by M0 is dispersed in a sparse-dense distribution, thereby improving the transmittance of the transparent electrode 10. By analyzing the cross-section of the transparent electrode 10 using SEM-EDX (Scanning Electron Microscope-Energy Dispersive X-ray Spectrometry) or STEM-EDX (Scanning Transmission Electron Microscope-Energy Dispersive X-ray Spectrometry), it was confirmed that the element represented by M0 is dispersed in a sparse-dense distribution in the compound containing Zn, O, and the element represented by M0.

[0029] The element represented by M0 is preferably anisotropically dispersed in the thickness direction of the transparent electrode 10 in a compound containing Zn, O, and the element represented by M0. The element represented by M0 is preferably anisotropically dispersed in the thickness direction and / or planar direction of the transparent electrode 10 in a compound containing Zn, O, and the element represented by M0. That is, the element represented by M0 in the transparent electrode 10 is not uniformly dispersed in the compound containing Zn, O, and the element represented by M0, and the concentration in one direction is not tilted. It is preferable that the anisotropic dispersion of the element represented by M0 improves the transmittance of the transparent electrode 10. Linear analysis of the cross-section of the transparent electrode 10 using SEM-EDX or STEM-EDX confirms that the element represented by M0 is anisotropically dispersed in the compound containing Zn, O, and the element represented by M0.

[0030] The transparent electrode 10 preferably has a first region R1 with a high proportion of the element represented by M0 and a second region P1 with a low proportion of the element represented by M0, which are alternately and repeatedly present at least twice in the thickness direction. Preferably, in a compound containing Zn, O, and the element represented by M0, the transparent electrode 10 has the first region R1 with a high proportion of the element represented by M0 and the second region P1 with a low proportion of the element represented by M0, which are alternately and repeatedly present at least twice in the thickness direction. That is, the element represented by M0 in the transparent electrode 10 is not uniformly dispersed in the compound containing Zn, O, and the element represented by M0, and the concentration is not tilted in one direction. The thickness direction of the transparent electrode 10 is the distance between the surface of the transparent electrode 10 with the largest area (i.e., the main surface) and the surface located on the opposite side of the main surface.

[0031] The compound containing elements represented by Zn, O, and Mo preferably contains N in addition to the elements represented by Zn, O, and Mo. The compound containing elements represented by Zn, O, and Mo preferably contains one or more elements selected from the group consisting of N, C, and H in addition to the elements represented by Zn, O, and Mo. Preferably, in addition to the elements represented by Zn, O, and Mo, it also contains N, C, and H.

[0032] By including the element represented by M0, light transmittance is improved. Furthermore, the resistance of the transparent electrode 10 tends to increase when there are many elements represented by M0. Therefore, it is preferable that the transparent electrode 10 contains 1% or more and 10% or less of the element represented by M0, more preferably 2% or more and 8% or less, and even more preferably 3% or more and 6% or less.

[0033] When the total of all elements contained in a compound containing elements represented by Zn, O, and M0 is set to 100 [atomic %], the ratio of the total of Zn, O, N, C, H, and M0 contained in the compound containing elements represented by Zn, O, and M0 is preferably 95 [atomic %] or more and 100 [atomic %] or less, more preferably 98 [atomic %] or more and 100 [atomic %] or less, and even more preferably 99 [atomic %] or more and 100 [atomic %] or less.

[0034] The result is obtained by using SIMS analysis.

[0035] In compounds containing elements represented by Zn, O and M0, it is preferable to have the relationship Zn:M0:O:N:H:C=u1:v1:w1:x1:y1:z1, satisfying u1+v1+w1+x1+y1+z1=2, 0.95≤(u1+v1)≤1.15, u1>0 and v1>0.

[0036] In compounds containing elements represented by Zn, O, and M0, it is preferable to have the relationship Zn:M0:O:N:H:C=u1:v1:w1:x1:y1:z1, satisfying 0.91≤u1≤1.09, 0.009≤v1≤0.11, 0.86≤w1≤1.04, 0.00015≤x1≤0.0002, 0.0015≤y1≤0.002, 0.00015≤z1≤0.0002, 0.95≤(u1+v1)≤1.15 and 0.0019≤(x1+y1+z1)≤0.0022.

[0037] In compounds containing elements represented by Zn, O, and M0, it is more preferable to have a relationship of Zn:M0:O:N:H:C=u1:v1:w1:x1:y1:z1, satisfying 0.92≤u1≤1.08, 0.018≤v1≤0.085, 0.87≤w1≤1.04, 0.00016≤x1≤0.00018, 0.0016≤y1≤0.0018, 0.00016≤z1≤0.00018, 0.97≤(u1+v1)≤1.13 and 0.002≤(x1+y1+z1)≤0.00215.

[0038] In compounds containing elements represented by Zn, O, and M0, it is even more preferable to have a relationship of Zn:M0:O:N:H:C=u1:v1:w1:x1:y1:z1, satisfying 0.93≤u1≤1.08, 0.025≤v1≤0.065, 0.88≤w1≤1.03, 0.00016≤x1≤0.00018, 0.0016≤y1≤0.0018, 0.00016≤z1≤0.00018, 0.99≤(u1+v1)≤1.1 and 0.002≤(x1+y1+z1)≤0.0021.

[0039] Compounds containing elements represented by Zn, O, and Mo are preferably Zn. u2 M0 v2 O w2 N x2 H y2 C z2 The compound represented is Zn. u2 M0 v2 O w2 N x2 H y2 C z2 The u2, v2, w2, x2, y2, and z2 values ​​of the compound represent Zn. u2 M0 v2 O w2 N x2 H y2 C z2The ratio of elements in the compound represented. u2, v2, w2, x2, y2, and z2 preferably satisfy u2+v2+w2+x2+y2+z2=2, 0.95≤(u2+v2)≤1.15, u2>0, and v2>0.

[0040] In Zn u2 M0 v2 O w2 N x2 H y2 C z2 The compounds represented preferably satisfy the following conditions: 0.91≤u2≤1.09, 0.009≤v2≤0.11, 0.86≤w2≤1.04, 0.00015≤x2≤0.0002, 0.0015≤y2≤0.002, 0.00015≤z2≤0.0002, 0.95≤(u2+v2)≤1.15 and 0.0019≤(x2+y2+z2)≤0.0022.

[0041] In Zn u2 M0 v2 O w2 N x2 H y2 C z2 The compounds represented more preferably satisfy 0.92≤u2≤1.08, 0.018≤v2≤0.085, 0.87≤w2≤1.04, 0.00016≤x2≤0.00018, 0.0016≤y2≤0.0018, 0.00016≤z2≤0.00018, 0.97≤(u2+v2)≤1.13 and 0.002≤(x2+y2+z2)≤0.00215.

[0042] In Zn u2 M0 v2 O w2 N x2 H y2 C z2 The compounds represented further preferably satisfy 0.93≤u2≤1.08, 0.025≤v2≤0.065, 0.88≤w2≤1.03, 0.00016≤x2≤0.00018, 0.0016≤y2≤0.0018, 0.00016≤z2≤0.00018, 0.99≤(u2+v2)≤1.1 and 0.002≤(x2+y2+z2)≤0.0021.

[0043] ZnO doped with the element represented by M0 is used as a transparent electrode with conductivity. The element represented by M0 is preferably anisotropically distributed in the thickness direction of the transparent electrode 10. From the viewpoint of obtaining a transparent electrode 10 with low resistance, it is preferable that a first region R1 with a high ratio of the element represented by M0 and a second region P1 with a low ratio of the element represented by M0 alternately and repeatedly exist.

[0044] It is believed that the element represented by M0 bonds more strongly to O than Zn, generating charge carriers by inducing oxygen defects. From the viewpoint of improving the conductivity of the transparent electrode 10, it is preferable to have an anisotropic distribution in the thickness direction of the transparent electrode 10, rather than a uniform dispersion of the element represented by M0 in the thickness direction of the transparent electrode 10 or a simple oblique variation of the concentration of the element represented by M0 in the thickness direction of the transparent electrode 10.

[0045] Preferably, the first region R1, with a high ratio of the element represented by M0, and the second region P1, with a low ratio of the element represented by M0, alternately and repeatedly exist at least twice in the thickness direction of the transparent electrode 10. The range in which the first region R1, with a high ratio of the element represented by M0, and the second region P1, with a low ratio of the element represented by M0, alternately and repeatedly exist at least twice in the thickness direction of the transparent electrode 10 is preferably 80% to 100% of the thickness of the transparent electrode 10. Preferably, the first region R1, with a high ratio of the element represented by M0, and the second region P1, with a low ratio of the element represented by M0, alternately and repeatedly exist throughout the thickness direction of the transparent electrode 10.

[0046] Preferably, the element represented by M0 is 3 or more and 10 or less in the first region R1, more preferably the element represented by M0 is 4 or more and 8 or less, and even more preferably the element represented by M0 is 5 or more and 7 or less.

[0047] Preferably, the element represented by M0 is 1% or more and 8% or less in the second region P1; more preferably, the element represented by M0 is 2% or more and 6% or less; and even more preferably, the element represented by M0 is 3% or more and 5% or less.

[0048] In the first region R1, where the ratio of elements represented by M0 is high, there is a relationship Zn:M0:O:N:H:C=u3:v3:w3:x3:y3:z3. In the second region P1, where the ratio of elements represented by M0 is low, there is a relationship Zn:M0:O:N:H:C=u4:v4:w4:x4:y4:z4.

[0049] In the first region R1, where the ratio of the element represented by M0 is high, there is a relationship of Zn:M0:O:N:H:C=u3:v3:w3:x3:y3:z3, satisfying u3+v3+w3+x3+y3+z3=2. In the second region P1, where the ratio of the element represented by M0 is low, there is a relationship of Zn:M0:O:N:H:C=u4:v4:w4:x4:y4:z4, satisfying u4+v4+w4+x4+y4+z4=2. U3 is preferably more than 0.971 times and less than 0.995 times u4, more preferably more than 0.981 times and less than 0.995 times u4, and even more preferably more than 0.985 times and less than 0.990 times u4. Furthermore, v3 is preferably 1.194 times or more and 3.885 times or less of v4, more preferably 1.244 times or more and 2.942 times or less of v4, and even more preferably 1.485 times or more and 1.971 times or less of v4. Furthermore, w3 is preferably 0.971 times or more and 0.995 times or less of w4. Furthermore, x3 is preferably 0.971 times or more and 0.995 times or less of x4. Furthermore, y3 is preferably 0.971 times or more and 0.995 times or less of y4. Furthermore, z3 is preferably 0.971 times or more and 0.995 times or less of z4. Furthermore, u3 is preferably 0.986 times or more and 0.995 times or less of u1. Furthermore, v3 is preferably 1.194 times or more and 1.577 times or less of v1. Furthermore, w3 is preferably 0.986 times or more and 0.995 times or less of w1. Furthermore, x3 is preferably 0.986 times or more and 0.995 times or less than x1. Furthermore, y3 is preferably 0.986 times or more and 0.995 times or less than y1. Furthermore, z3 is preferably 0.986 times or more and 0.995 times or less than z1. Furthermore, u4 is preferably 1.000 times or more and 1.015 times or less than u1. Furthermore, v4 is preferably 0.406 times or more and 1.000 times or less than v1. Furthermore, w4 is preferably 1.000 times or more and 1.015 times or less than w1. Furthermore, x4 is preferably 1.000 times or more and 1.015 times or less than x1. Furthermore, y4 is preferably 1.000 times or more and 1.015 times or less than y1. Furthermore, z4 is preferably 1.000 times or more and 1.015 times or less than z1.

[0050] In region R1, where the ratio of the element represented by M0 is high, the compound containing Zn, O, and the element represented by M0 is Zn. u5 M0 v5 C w5 N x5 H y5 O w5The compound represented has the relationship Zn:M0:O:N:H:C=u5:v5:w5:x5:y5:z5, satisfying u5+v5+w5+x5+y5+z5=2. In the second region P1, where the ratio of the element represented by M0 is low, the compound containing Zn, O, and the element represented by M0 is Zn. u6 M0 v6 C w6 N x6 H y6 O w6 The compound represents a Zn:Mo:O:N:H:C ratio of u6:v6:w6:x6:y6:z6, satisfying u6+v6+w6+x6+y6+z6=2. U5 is preferably 0.971 times or more and 0.995 times or less than u6, more preferably 0.981 times or more and 0.995 times or less than u6, and even more preferably 0.985 times or more and 0.990 times or less than u6. Furthermore, v5 is preferably 1.194 times or more and 3.885 times or less than v6, more preferably 1.244 times or more and 2.942 times or less than v6, and even more preferably 1.485 times or more and 1.971 times or less than v6. Furthermore, w5 is preferably 0.971 times or more and 0.995 times or less than w6. Furthermore, x5 is preferably 0.971 times or more and 0.995 times or less than x6. Furthermore, y5 is preferably 0.971 times or more and 0.995 times or less than y6. Furthermore, z5 is preferably 0.971 times or more and 0.995 times or less than z6. Furthermore, u5 is preferably 0.986 times or more and 0.995 times or less than u2. Furthermore, v5 is preferably 1.194 times or more and 1.577 times or less than v2. Furthermore, w5 is preferably 0.986 times or more and 0.995 times or less than w2. Furthermore, x5 is preferably 0.986 times or more and 0.995 times or less than x2. Furthermore, y5 is preferably 0.986 times or more and 0.995 times or less than y2. Furthermore, z5 is preferably 0.986 times or more and 0.995 times or less than z2. Furthermore, u6 is preferably 1 times or more and 1.015 times or less than u2. Furthermore, v6 is preferably 0.406 times or more and 1 times or less than v2. Furthermore, w6 is preferably more than 1 and less than 1.015 times w2. Furthermore, x6 is preferably more than 1 and less than 1.015 times x2. Furthermore, y6 is preferably more than 1 and less than 1.015 times y2. Furthermore, z6 is preferably more than 1 and less than 1.015 times z2.

[0051] From the viewpoint of reducing the resistance of the transparent electrode 10, it is preferable that the thickness of the first region R1 is 0.4 nm or more and 1 nm or less, and the thickness of the second region P1 is 0.4 nm or more and 1 nm or less. From this viewpoint, it is more preferable that the thickness of the first region R1 is 0.5 nm or more and 0.9 nm or less, and the thickness of the second region P1 is 0.5 nm or more and 0.9 nm or less. From this viewpoint, it is even more preferable that the thickness of the first region R1 is 0.5 nm or more and 0.8 nm or less, and the thickness of the second region P1 is 0.5 nm or more and 0.8 nm or less.

[0052] The relationship between region 1 R1 and region 2 P1 is, for example, through... Figure 2 The analysis points A1 to A9 shown are analyzed to confirm this. D1 is the length of the transparent electrode 10 in the width direction (X direction). D2 is the length of the transparent electrode 10 in the depth direction (Y direction). It should be noted that at a specific depth from the surface of the transparent electrode 10, there are two possible configurations: A1 to A9 are all either the first region R1 or the second region P1, and A1 to A9 are individually either the first region R1 or the second region P1. For example, if the first region R1 is located at a specific depth from the center A5 of the transparent electrode 10, the first region R1 at that specific depth from the center A5 of the transparent electrode 10 is sandwiched by the second region P1 in the thickness direction of the transparent electrode 10. That is, when analyzing the transparent electrode 10 along the depth direction from any point on the surface of the transparent electrode 10, it is preferable that the first region R1 and the second region P1 alternately exist more than twice in the thickness direction of the transparent electrode 10. When analyzing the transparent electrode 10 along its depth direction from any point on its surface, the cross-section of the transparent electrode 10 is analyzed using HAADF-STEM (High-Angle Annular DarkField Scanning TEM). Based on the pattern of brightness difference in the image, it can be confirmed that the first region R1 and the second region P1 alternately and repeatedly exist more than twice in the thickness direction of the transparent electrode 10. Furthermore, by analyzing the cross-section of the transparent electrode 10 using SEM-EDX or TEM-EDX, it can be confirmed that the first region R1 and the second region P1 alternately and repeatedly exist more than twice in the thickness direction of the transparent electrode 10. When using EDX analysis, the beam diameter is preferably 0.1 nm or more and 5 nm or less, and the analysis depth is preferably the thickness of the sample sheet.

[0053] Figure 3The diagram illustrates the concentration of the element represented by M0 along the thickness direction of the transparent electrode 10 at analysis points A1 to A3 (A1 to A9). The vertical axis represents the depth direction. The horizontal axis represents the concentration of the element represented by M0 (high concentration is indicated by the arrowhead). The concentration of the element represented by M0 at the intersection of the vertical and horizontal axes is represented by v1.

[0054] The concentration of the element represented by M0 preferably changes periodically in the thickness direction. Depending on the position of the transparent electrode 10, the phase of the periodic change in the concentration of the element represented by M0 may also deviate. One period of the concentration change of the element represented by M0 in the thickness direction of the transparent electrode 10 (the sum of the average thickness of the first region R1 and the average thickness of the second region P1) is preferably 0.8 nm or more and 2 nm or less. If one period is 0.8 nm or more and 2 nm or less, it contributes to the reduction of the resistance of the transparent electrode 10. From this viewpoint, one period of the concentration change of the element represented by M0 in the thickness direction of the transparent electrode 10 is more preferably 1 nm or more and 1.8 nm or less, and even more preferably 1 nm or more and 1.6 nm or less.

[0055] The boundary between region R1 (first region) and region P1 (second region) is the position where the concentration of the element represented by M0 satisfies v1.

[0056] The transparent electrode 10 preferably has a third region R2 with a high ratio of the element represented by M0 and a fourth region P2 with a low ratio of the element represented by M0 along the surface direction. Multiple third regions R2 and multiple fourth regions P4 preferably exist along the surface direction of the transparent electrode 10. Preferably, within a range where the first region R1 and the second region P1 alternately and repeatedly exist more than twice in the thickness direction of the transparent electrode 10, the third region R2 with a high ratio of the element represented by M0 and the fourth region P2 with a low ratio of the element represented by M0 are present along the surface direction.

[0057] The area (area of ​​the transparent electrode 10 in the face direction) in which the third region R2 and the fourth region P2 alternately exist in the face direction of the transparent electrode 10 is preferably 5% or more and 30% or less of the area (cross-sectional area of ​​the transparent electrode 10 in the face direction) in which the first region R1 and the second region P1 alternately exist more than twice in the thickness direction of the transparent electrode 10.

[0058] Preferably, the element represented by M0 is 3 or more [atomic percentage] and less than 10 [atomic percentage] in the third region R2, more preferably, the element represented by M0 is 4 or more [atomic percentage] and less than 8 [atomic percentage], and even more preferably, the element represented by M0 is 5 or more [atomic percentage] and less than 7 [atomic percentage].

[0059] Preferably, the element represented by M0 is 1 or more and 8 or less in region P2 of the fourth region; more preferably, the element represented by M0 is 2 or more and 6 or less; and even more preferably, the element represented by M0 is 3 or more and 5 or less.

[0060] In the third region R2, where the ratio of elements represented by M0 is high, there is a relationship Zn:M0:O:N:H:C=u7:v7:w7:x7:y7:z7. In the fourth region P2, where the ratio of elements represented by M0 is low, there is a relationship Zn:M0:O:N:H:C=u8:v8:w8:x8:y8:z8.

[0061] In the third region R2, where the ratio of the element represented by M0 is high, there is a relationship of Zn:M0:O:N:H:C=u7:v7:w7:x7:y7:z7, satisfying u7+v7+w7+x7+y7+z7=2. In the fourth region P2, where the ratio of the element represented by M0 is low, there is a relationship of Zn:M0:O:N:H:C=u8:v8:w8:x8:y8:z8, satisfying u8+v8+w8+x8+y8+z8=2. U7 is preferably more than 0.971 times and less than 0.995 times u8, more preferably more than 0.981 times and less than 0.995 times u8, and even more preferably more than 0.985 times and less than 0.990 times u8. Furthermore, v7 is preferably 1.194 times or more and 3.885 times or less of v8, more preferably 1.244 times or more and 2.942 times or less of v8, and even more preferably 1.485 times or more and 1.971 times or less of v8. Furthermore, w7 is preferably 0.971 times or more and 0.995 times or less of w8. Furthermore, x7 is preferably 0.971 times or more and 0.995 times or less of x8. Furthermore, y7 is preferably 0.971 times or more and 0.995 times or less of y8. Furthermore, z7 is preferably 0.971 times or more and 0.995 times or less of z8. Furthermore, u7 is preferably 0.986 times or more and 0.995 times or less of u1. Furthermore, v7 is preferably 1.194 times or more and 1.577 times or less of v1. Furthermore, w7 is preferably 0.986 times or more and 0.995 times or less of w1. Furthermore, x7 is preferably 0.986 times or more and 0.995 times or less than x1. Furthermore, y7 is preferably 0.986 times or more and 0.995 times or less than y1. Furthermore, z7 is preferably 0.986 times or more and 0.995 times or less than z1. Furthermore, u8 is preferably 1 time or more and 1.015 times or less than u1. Furthermore, v8 is preferably 0.406 times or more and 1 time or less than v1. Furthermore, w8 is preferably 1 time or more and 1.015 times or less than w1. Furthermore, x8 is preferably 1 time or more and 1.015 times or less than x1. Furthermore, y8 is preferably 1 time or more and 1.015 times or less than y1. Furthermore, z8 is preferably 1 time or more and 1.015 times or less than z1.

[0062] In region R2, where the proportion of the element represented by M0 is high, the compound containing Zn, O, and the element represented by M0 is Zn. u9 M0 v9 O w9 N x9 H y9 C z9The compound represented has the relationship Zn:M0:O:N:H:C=u9:v9:w9:x9:y9:z9, satisfying u9+v9+w9+x9+y9+z9=2. In region P2, the fourth region with a low proportion of the element represented by M0, the compound containing Zn, O, and the element represented by M0 is Zn. u10 M0 v10 O w10 N x10 H y10 C z10 The compound represents a Zn:Mo:O:N:H:C relationship of u10:v10:w10:x10:y10:z10, satisfying u10+v10+w10+x10+y10+z10=2. U9 is preferably 0.971 times or more and 0.995 times or less of u10, more preferably 0.981 times or more and 0.995 times or less of u10, and even more preferably 0.985 times or more and 0.990 times or less of u10. Furthermore, v9 is preferably 1.194 times or more and 3.885 times or less of v10, more preferably 1.244 times or more and 2.942 times or less of v10, and even more preferably 1.485 times or more and 1.971 times or less of v10. Furthermore, w9 is preferably 0.971 times or more and 0.995 times or less of w10. Furthermore, x9 is preferably 0.971 times or more and 0.995 times or less than x10. Furthermore, y9 is preferably 0.971 times or more and 0.995 times or less than y10. Furthermore, z9 is preferably 0.971 times or more and 0.995 times or less than z10. Furthermore, u9 is preferably 0.986 times or more and 0.995 times or less than u2. Furthermore, v9 is preferably 1.194 times or more and 1.577 times or less than v2. Furthermore, w9 is preferably 0.986 times or more and 0.995 times or less than w2. Furthermore, x9 is preferably 0.986 times or more and 0.995 times or less than x2. Furthermore, y9 is preferably 0.986 times or more and 0.995 times or less than y2. Furthermore, z9 is preferably 0.986 times or more and 0.995 times or less than z2. Furthermore, u10 is preferably more than 1 and less than 1.015 times u2. Furthermore, v10 is preferably more than 0.406 and less than 1 times v2. Furthermore, w10 is preferably more than 1 and less than 1.015 times w2. Furthermore, x10 is preferably more than 1 and less than 1.015 times x2. Furthermore, y10 is preferably more than 1 and less than 1.015 times y2. Furthermore, z10 is preferably more than 1 and less than 1.015 times z2.

[0063] From the viewpoint of reducing the resistance of the transparent electrode 10, it is preferable that the length of the third region R2 (the width of the third region R2 in the planar direction) is 0.4 nm or more and 1 nm or less, and the length of the fourth region P2 (the width of the fourth region P2 in the planar direction) is 0.4 nm or more and 1 nm or less. From this viewpoint, it is more preferable that the length of the third region R2 is 0.5 nm or more and 0.9 nm or less, and the length of the fourth region P2 is 0.5 nm or more and 0.9 nm or less. From this viewpoint, it is even more preferable that the length of the third region R2 is 0.5 nm or more and 0.8 nm or less, and the length of the fourth region P2 is 0.5 nm or more and 0.8 nm or less.

[0064] The relationship between region 3 R2 and region 4 P2 was confirmed by analyzing the cross-section of the transparent electrode 10 in the planar direction using SEM-EDX or TEM-EDX. Figure 2 The analysis points A1 to A9 shown are analyzed, and the third region R2 and the fourth region P2 can be identified based on the different concentrations of the elements represented by M0 at each point. The analysis method for the third region R2 and the fourth region P2 is, for example, to evaluate the unevenness of the concentrations of the elements represented by M0 at the same depth of analysis points A1 to A9 in the analysis of the first region R1 and the second region P1.

[0065] Next, the manufacturing method of the transparent electrode 10 will be described. The transparent electrode 10 is formed on a substrate. The substrate is, for example, a solar cell without any electrodes. More specifically, the transparent electrode is formed on the n-type layer of the solar cell. In addition to solar cells, the transparent electrode 10 can also be used as an electrode for display panels, etc.

[0066] The transparent electrode 10 is preferably manufactured by ALD (Alternating Current Deposition). An organozinc compound and an organic compound containing the element represented by Mo are supplied as precursors to a chamber, and the transparent electrode 10 is formed on a substrate. The transparent electrode 10 of the embodiment can be obtained by reducing the amount of the element represented by Mo per pulse without repeatedly increasing or decreasing the amount of Mo per pulse. By reducing the amount of Mo per pulse, a transparent electrode 10 in which the element represented by Mo is distributed at a preferred distance can be obtained without increasing the concentration of the element represented by Mo in the transparent electrode 10. This transparent electrode 10 achieves both low resistance and high transparency. The transparent electrode 10 of the embodiment can be obtained by reducing the amount of Mo per pulse.

[0067] As an organozinc compound, it is preferably selected from one or more compounds in the group consisting of dimethyl zinc, diethyl zinc, etc.

[0068] The organic compound containing the element represented by M0 is preferably one or more selected from the group consisting of trimethylaluminum, triethylaluminum, tris(dimethylamide)aluminum, trimethylgallium, tris(dimethylamide)gallium, trimethylborane, triethylborane, and tris(dimethylamide)borane. From the viewpoint of obtaining the transparent electrode 10 of the embodiment, the organic compound containing the element represented by M0 is preferably a nitrogen-containing compound.

[0069] From the viewpoint of fabricating a transparent electrode 10 that alternates between the first region R1 and the second region P1, the ratio of the element represented by M0 in the organic compound to nitrogen atoms (the number of moles of the element represented by M0 in the organic compound) / (the number of moles of nitrogen atoms in the organic compound) is preferably 0.3 or more and 1 or less, more preferably 0.5 or more and 1 or less.

[0070] From the viewpoint of fabricating a transparent electrode 10 in which the first region R1 and the second region P1 alternate repeatedly, it is preferable to fabricate it by ALD. If the transparent electrode 10 is fabricated by sputtering, a highly uniform transparent electrode is obtained in which the first region R1 and the second region P1 do not alternate repeatedly.

[0071] The transparent electrode 10, in which the first region R1 and the second region P1 are alternately repeated more than twice, has a high transmittance of 80% or more for light with a wavelength of 400 nm or more and 1300 nm or less. The transmittance of light with a wavelength of approximately 300 nm or more and approximately 1100 nm or less is also improved. The transparent electrode 10 of this embodiment is a conductive film that balances low resistance and high transmittance. Therefore, the transparent electrode 10 of this embodiment is suitable for use as a transparent electrode in devices requiring high transmittance of visible light, such as solar cells or displays.

[0072] (Second Implementation) The second embodiment relates to a solar cell. Figure 4 A schematic cross-sectional view of the solar cell 100 according to the second embodiment is shown. (As shown...) Figure 4 As shown, the solar cell 100 according to this embodiment has a substrate 1, a p-electrode 2 as a first electrode, a p-type light-absorbing layer 3, an n-type layer 4, and an n-electrode 5 as a second electrode. An intermediate layer (not shown) may also be included between the n-type layer 4 and the n-electrode 5. Sunlight can be incident from either the n-electrode 5 side or the p-electrode 2 side, but incident from the n-electrode 5 side is more preferred. Since the solar cell 100 of this embodiment is a transmission-type solar cell, it is preferably used on the top unit side (light incident side) of a multi-junction solar cell. Figure 4In this case, substrate 1 is disposed on the side opposite to the p-type light-absorbing layer 3 of the p-electrode 2, but substrate 1 can also be disposed on the side opposite to the n-type layer 4 of the n-electrode 5. The following will describe... Figure 6 The configuration shown is described, but the configuration in which the substrate 1 is disposed on the n-electrode 5 side is the same, except that the position of the substrate 1 is different. In the embodiment, the solar cell 100 receives incident light from the n-electrode 5 side toward the p-electrode 2 side.

[0073] If the solar cell 100 of the embodiment uses transmission-type electrodes for the p electrode 2 and the n electrode 5, it is a transmission-type solar cell with high transmittance of light in the wavelength band of 700 [nm] and above and 1200 [nm] and a color of red (reddish-brown), yellow or orange.

[0074] Substrate 1 is a transparent substrate. Substrate 1 can be made of light-transmitting acrylic resin, polyimide, polycarbonate, polyethylene terephthalate (PET), polypropylene (PP), fluorine-based resins (polytetrafluoroethylene (PTFE), perfluoroethylene propylene copolymer (FEP), ethylene tetrafluoroethylene copolymer (ETFE), polychlorotrifluoroethylene (PCTFE), perfluoroalkoxyalkane (PFA), etc.), polyarylate, polysulfone, polyethersulfone, or polyetherimide, or inorganic substrates such as soda-lime glass, white glass, chemically strengthened glass, or quartz. Substrate 1 can also be made by stacking the substrates listed above.

[0075] The p-electrode 2 is disposed on the substrate 1, between the substrate 1 and the p-type light-absorbing layer 3. The p-electrode 2 is preferably ohmically bonded to the p-type light-absorbing layer 3. The p-electrode 2 is a transparent conductive layer disposed on the side of the p-type light-absorbing layer 3. The thickness of the p-electrode 2 is typically 100 nm or more and 2000 nm or less. Figure 4In this configuration, the p-electrode 2 is in direct contact with the p-type light-absorbing layer 3. The p-electrode 2 preferably comprises one or more layers of a transparent conductive oxide film. As the transparent conductive oxide film, semiconductor conductive films such as indium tin oxide (ITO), aluminum-doped zinc oxide (AZO), boron-doped zinc oxide (BZO), gallium-doped zinc oxide (GZO), doped tin oxide, titanium-doped indium oxide (ITiO), indium zinc oxide (IZO), indium gallium zinc oxide (IGZO), and hydrogen-doped indium oxide (IOH) can be used; there are no particular limitations. The transparent conductive oxide film can also be a stacked film comprising multiple layers. As a dopant in films such as tin oxide, there are no particular limitations as long as it is selected from one or more elements chosen from the group consisting of In, Si, Ge, Ti, Cu, Sb, Nb, Ta, W, Mo, F, and Cl. The p-electrode 2 preferably comprises a tin oxide film doped with one or more elements selected from the group consisting of In, Si, Ge, Ti, Cu, Sb, Nb, Ta, W, Mo, F, and Cl. In the doped tin oxide film, the element selected from the group consisting of In, Si, Ge, Ti, Cu, Sb, Nb, Ta, W, Mo, F, and Cl preferably comprises 10 atomic% or less relative to the tin contained in the tin oxide film. The p-electrode 2 can be a laminated film formed by stacking an oxide transparent conductive film and a metal film. The thickness of the metal film is preferably 1 nm or more and 2 μm or less, and the metal (including alloys) contained in the metal film is not particularly limited to Mo, Au, Cu, Ag, Al, Ta, W, etc. Furthermore, the p-electrode 2 preferably comprises a dot-shaped, line-shaped, or mesh-shaped electrode (selected from one or more of the group consisting of metals, alloys, graphene, conductive nitrides, and conductive oxides) between the oxide transparent conductive film and the substrate 1, or between the oxide transparent conductive film and the p-type light-absorbing layer 3. The dot-shaped, line-shaped, or mesh-shaped metal preferably has an aperture ratio of 50% or more relative to the oxide transparent conductive film. The dot-shaped, line-shaped, or mesh-shaped metal is Mo, Au, Cu, Ag, Al, Ta, or W, etc., and is not particularly limited. When a metal film is used in the p-electrode 2, from the viewpoint of transmittance, a film thickness of approximately 5 nm or less is preferably set. When a line-shaped or mesh-shaped metal film is used, since transmittance is ensured by the openings, the film thickness of the metal film is not limited thereto.

[0076] Preferably, a doped tin oxide film that ohmically bonds with the p-type light-absorbing layer 3 is disposed on the outermost surface of the oxide transparent conductive film on the p-type light-absorbing layer 3 side. Preferably, at least a portion of the doped tin oxide film disposed on the outermost surface of the oxide transparent conductive film on the p-type light-absorbing layer 3 side is in direct contact with the p-type light-absorbing layer 3.

[0077] The p-type light-absorbing layer 3 is a p-type semiconductor layer. The p-type light-absorbing layer 3 is disposed on the p-electrode 2. The p-type light-absorbing layer 3 can also be in direct contact with the p-electrode 2; other layers may also exist as long as electrical contact with the p-electrode 2 can be ensured. The p-type light-absorbing layer 3 is disposed between the p-electrode 2 and the n-type layer 4. It is not the entire surface of the p-type light-absorbing layer 3 facing the n-type layer 4, but only a portion of its surface is in direct contact with the n-type layer 4. The p-type light-absorbing layer 3 is primarily composed of a cuprous oxide compound. The cuprous oxide compound preferably has a cuprite-type structure.

[0078] The p-type light-absorbing layer 3 is preferably a semiconductor layer containing a cuprous oxide compound. The p-type light-absorbing layer 3 is preferably a polycrystalline cuprous oxide compound. In the p-type light-absorbing layer 3, as part of the impurities, one or more cuprous oxide impurities selected from the group consisting of copper (Cu), copper oxide (CuO) and copper hydroxide (Cu(OH)2) may also be included in trace amounts.

[0079] When all elements except oxygen contained in the p-type light absorption layer 3 are set to 100%, the copper content in the p-type light absorption layer 3 is preferably 90% or more and 100% or less, preferably 95% or more and 100% or less, more preferably 98% or more and 100% or less, and even more preferably 99% or more and 100% or less.

[0080] When the cuprous oxide compound contains elements other than copper and oxygen, and when all elements other than oxygen in the p-type light-absorbing layer 3 are set to 100%, the copper content in the p-type light-absorbing layer 3 is preferably 90.0% or more and 99.9% or less, preferably 95.0% or more and 99.9% or less, more preferably 98% or less and 99.9% or less, and even more preferably 99.0% or more and 99.9% or less.

[0081] The cuprous oxide compound preferably contains copper and oxygen, and more preferably contains the element represented by M1. The element represented by M1 is preferably one or more elements selected from the group consisting of Cl, F, Br, I, Sn, Sb, Ag, Li, Na, K, Cs, Rb, Al, In, Zn, Mg, Ga, Si, Ge, N, P, B, Ti, Hf, Zr and Ca.

[0082] When all elements except oxygen contained in the p-type light absorption layer 3 are set to 100%, the total amount of copper and the elements represented by M1 contained in the p-type light absorption layer 3 is preferably 95% or more and 100% or less, more preferably 98% or more and 100% or less, and even more preferably 99% or more and 100% or less.

[0083] If the number of copper atoms is set to 1, the number of oxygen atoms in the cuprous oxide compound is preferably 0.48 or more and 0.56 or less. If there is more oxygen relative to copper, the proportion of copper oxide in the cuprous oxide compound becomes higher, resulting in a narrower band gap and reduced light transmittance of the p-type light absorption layer 3, which is not preferred. If there is less oxygen relative to copper, the proportion of copper in the cuprous oxide compound becomes higher, resulting in reduced light transmittance, which is also not preferred. Furthermore, if the oxygen-to-copper ratio does not meet the above range, the cuprous oxide compound becomes less likely to have a cuprite-type structure.

[0084] Preferably, 95% to 100% of the p-type light-absorbing layer 3 is a cuprous oxide compound, more preferably 98% to 100% of the p-type light-absorbing layer 3 is a cuprous oxide compound, and even more preferably 99% to 100% of the p-type light-absorbing layer 3 is a cuprous oxide compound. 100% of the p-type light-absorbing layer 3 can be composed of a cuprous oxide compound.

[0085] If the p-type light-absorbing layer 3 contains few heterogeneous phases and has good crystallinity, the light transmittance of the p-type light-absorbing layer 3 will be higher, which is therefore preferable. The band gap of the p-type light-absorbing layer 3 can be adjusted by including elements other than Cu and O in the p-type light-absorbing layer 3. The band gap of the p-type light-absorbing layer 3 is preferably 2.0 eV or higher and 2.2 eV or lower. If the band gap is within this range, in a multi-junction solar cell where Si is used in the light-absorbing layer for the bottom unit and the solar cell of the embodiment is used in the top unit, sunlight can be efficiently utilized in both the top and bottom units. The p-type light-absorbing layer 3 preferably contains Sn and / or Sb. The Sn or Sb in the p-type light-absorbing layer 3 can be Sn or Sb added to the p-type light-absorbing layer 3, or Sn or Sb derived from the p electrode 2. The Ga contained in the p-type light-absorbing layer 3 is not included in the raw material for forming the p-type light-absorbing layer 3, but rather is Ga diffused from the n-type layer 4 into the p-type light-absorbing layer 3. When other elements are used during the formation of the n-type layer 4, these elements sometimes diffuse into the p-type light-absorbing layer 3.

[0086] The composition ratio of the p-type light-absorbing layer 3 described above is the overall composition ratio of the p-type light-absorbing layer 3. Furthermore, the compound composition ratio of the p-type light-absorbing layer 3 is preferably satisfied overall within the p-type light-absorbing layer 3.

[0087] The p-type light absorption layer 3 preferably has a p+ type (p positive type) region on the p electrode 2 side.

[0088] The p-type light-absorbing layer 3 preferably has a p-type (p-negative) region on the n-type layer side. The p-type light-absorbing layer 3 preferably has a p-type (p-negative) region on the n-type layer side and a p+ type (p-positive) region on the p electrode 2 side.

[0089] If elements from the n-type layer 4 diffuse into the p-type light-absorbing layer 3, and / or elements from the p-type light-absorbing layer 3 diffuse into the n-type layer 4, then sometimes a mixed region with a thickness of less than 20 nm exists between the p-type light-absorbing layer 3 and the n-type layer 4 due to mutual element diffusion. Less than 90% of the metal elements in the mixed region are metals contained in the p-type light-absorbing layer 3, and more than 10% of the metal elements in the mixed region are metals contained in the n-type layer 4.

[0090] The thickness of the p-type light-absorbing layer 3 is determined by cross-sectional observation using an electron microscope or a height difference measuring instrument, and is preferably 2000 nm or more and 15000 nm or less (2 μm or more and 15 μm or less), more preferably 2500 nm or more and 10000 nm or less, even more preferably 4000 nm or more and 10000 nm or less, and most preferably 4000 nm or more and 8000 nm or less. The p-type light-absorbing layer 3 has minimal surface unevenness, and the difference between the minimum and maximum thickness of the p-type light-absorbing layer 3 is preferably 0 nm or more and 100 nm or less, more preferably 0 nm or more and 50 nm or less. The p-type light-absorbing layer 3 has a cuboid shape.

[0091] The p-type light-absorbing layer 3 is preferably formed by sputtering or similar methods. Specifically, it is preferable to heat the component on which the p-electrode 2 is formed on the substrate 1 to 300°C or higher and 600°C or lower, within an oxygen partial pressure range of 0.01 Pa or higher and 4.8 Pa or lower, and within a range of 0.02 μm / min or higher and 20 μm / min or lower. From the viewpoint of forming a polycrystalline film with high transmittance and large particle size, when the deposition rate is set to d, the oxygen partial pressure is more preferably 0.55 × d (a value obtained by multiplying "0.55" by "d") Pa or higher and 1.00 × d (a value obtained by multiplying "1.00" by "d") Pa or lower. Furthermore, the heating temperature is more preferably 350°C or higher and 500°C or lower. Element M1 can be added during film formation. After the p-type light-absorbing layer 3 is formed, the side on which the n-type layer 4 is formed can be oxidized before the n-type layer 4 is formed.

[0092] The n-type layer 4 is an n-type semiconductor layer. The n-type layer 4 is disposed between the p-type light-absorbing layer 3 and the n-electrode 5. The n-type layer 4 is preferably disposed on the p-type light-absorbing layer 3. The n-type layer 4 is formed, for example, by the ALD method.

[0093] The n-type layer 4 located on the p-type light-absorbing layer 3 side preferably contains a compound (oxide) with Ga as the main component. The n-type layer 4 can be a mixture of other oxides with Ga as the main component, or it can be doped with other elements, or a Ga-doped oxide can be mixed with other oxides. The n-type layer 4 can be a single layer or multiple layers. Of the metal elements contained in the n-type layer 4 located on the p-type light-absorbing layer 3 side, Ga is preferably 40 atomic% or more, more preferably 50 atomic% or more. The Ga-containing metal elements contained in the n-type layer 4 can be tilted from the p-type light-absorbing layer 3 side towards the n-electrode 5 side. In the case where the n-type layer 4 is a multilayer semiconductor layer (e.g., 2 layers), it is designated as the 1st n-type layer and the 2nd n-type layer from the p-type light-absorbing layer 3 side. The element represented by M2 contained in the 1st n-type layer is preferably less than the element represented by M2 contained in the 2nd n-type layer. When the first n-type layer is a compound (oxide) with Ga as the main component, the second n-type layer is preferably a compound (oxide) with Zn as the main component, including Sn, etc.

[0094] The n-type layer 4 located on the p-type light-absorbing layer 3 preferably contains an oxide containing an element represented by M2 and Ga. The oxide with Ga as the main component is, for example, an oxide containing an element represented by M2 and Ga. The n-type layer 4 located on the p-type light-absorbing layer 3 preferably contains an oxide containing one or more elements selected from the group consisting of H, Sn, Sb, Cu, Ag, Li, Na, K, Cs, Rb, Al, In, Zn, Mg, Si, Ge, N, B, Ti, Hf, Zr, Ca, Ce, La, Pr, and Nd, i.e., an oxide containing M2 and Ga. The n-type layer 4 located on the p-type light-absorbing layer 3 preferably contains 90 wt% to 100 wt% of an oxide containing one or more elements selected from the group consisting of H, Sn, Sb, Cu, Ag, Li, Na, K, Cs, Rb, Al, In, Zn, Mg, Si, Ge, N, B, Ti, Hf, Zr, Ca, Ce, La, Pr, and Nd, i.e., M2 and Ga. The compound with Ga as its main component in the n-type layer 4 located on the p-type light-absorbing layer 3 is preferably composed of an average Ga content. h1 M2 i1 O j1 The oxides containing M2 and Ga are represented. h1, i1 and j2 preferably satisfy 1.8≤h1≤2.1, 0.0≤i1≤0.2 and 2.9≤j1≤3.1.

[0095] The n-type layer 4 located on the p-type light-absorbing layer 3 side preferably contains 90% to 100% of an oxide comprising M2 and Ga. More preferably, the n-type layer 4 located on the p-type light-absorbing layer 3 side contains 95% to 100% of an oxide comprising M2 and Ga. Even more preferably, the n-type layer 4 located on the p-type light-absorbing layer 3 side contains 98% to 100% of a compound represented by an oxide comprising M2 and Ga. The Cu contained in the n-type layer 4 located on the p-type light-absorbing layer 3 side is not included in the raw material for forming the n-type layer 4, but rather is Cu diffused from the p-type light-absorbing layer 3 into the n-type layer 4. When other elements are also used during the formation of the p-type light-absorbing layer 3, these elements sometimes also diffuse into the n-type layer 4.

[0096] The thickness of the n-type layer 4 is typically 3 nm or more and 100 nm or less. If the thickness of the n-type layer 4 is less than 3 nm, leakage current will occur due to poor coverage of the n-type layer 4, which may sometimes degrade the performance. The thickness is not limited to the above when the coverage is good. If the thickness of the n-type layer 4 exceeds 50 nm, the performance may be degraded due to excessively high resistivity of the n-type layer 4, or the short-circuit current may be reduced due to reduced transmittance. Therefore, the thickness of the n-type layer 4 is more preferably 3 nm or more and 20 nm or less, and even more preferably 5 nm or more and 20 nm or less.

[0097] The n-electrode 5 is an electrode on the side of the n-type layer 4 that is transparent to visible light. The n-electrode 5 is the transparent electrode 10 of the first embodiment. The n-electrode 5 is preferably in direct contact with the n-type layer 4. The first region R1 or the second region P1 of the n-electrode 5 is preferably in direct contact with the n-type layer 4. The first region R1 or the second region P1 that is in direct contact with the n-type layer 4 is preferably located on the side closest to the n-type layer 4 among the first region R1 and the second region P1 that alternately and repeatedly exist more than twice in the thickness direction of the n-electrode 5.

[0098] When the second region P1 is in direct contact with the n-type layer 4, it is preferable that the surfaces of the n-type layer 4 and the n-electrode 5 on the n-type layer 4 side are arranged in the order of the second region P1, the first region R1, the second region P1 and the first region R1 in direct contact with the n-type layer 4, from the n-type layer 4 and the n-electrode 5 on the opposite side to the n-type layer 4 side, with each opposing surface in direct contact.

[0099] (Third implementation) The third embodiment relates to a multijunction solar cell. Figure 5 The diagram shows a cross-sectional concept diagram of a multi-junction solar cell according to the third embodiment. Figure 5 The multi-junction solar cell 200 has a solar cell (first solar cell) 100 and a second solar cell 201 of the second embodiment on the light incident side. The band gap of the light-absorbing layer of the second solar cell 201 is smaller than the band gap of the p-type light-absorbing layer 3 of the solar cell 100 of the second embodiment. It should be noted that the multi-junction solar cell 200 of the embodiment also includes a solar cell obtained by joining three or more solar cells.

[0100] Since the band gap of the p-type light-absorbing layer (cuprous oxide) 3 of the first solar cell 100 in the second embodiment is approximately 2.0 eV or more and 2.2 eV or less, the band gap of the light-absorbing layer of the second solar cell 201 is preferably 1.0 eV or more and 1.6 eV or less. As the light-absorbing layer of the second solar cell 201, it is preferably selected from one of the following groups: compound semiconductor layers composed of CIGS and CdTe compounds with high In content, crystalline silicon, and perovskite compounds.

[0101] (Fourth implementation) The fourth embodiment relates to a solar cell module. Figure 6 A perspective view of the solar cell module 300 according to the fourth embodiment is shown. Figure 6The solar cell module 300 is a solar cell module obtained by stacking a first solar cell module 301 and a second solar cell module 302. The first solar cell module 301 is the light incident side and uses the solar cell 100 of the second embodiment. For the second solar cell module 302, it is preferable to use the second solar cell 201.

[0102] Figure 7 The figure shows a cross-sectional view of the solar cell module 300. Figure 7 The structure of the first solar cell module 301 is shown in detail, but the structure of the second solar cell module 302 is not shown. In the second solar cell module 302, the structure of the solar cell module is appropriately selected according to the light-absorbing layer and other components of the solar cell used. Figure 7 The solar cell module 300 includes multiple sub-modules 303 enclosed by dashed lines. Each sub-module 303 is formed by multiple solar cells 100 (solar cell units) arranged horizontally and electrically connected in series via wiring 304. The multiple sub-modules 303 can also be electrically connected in parallel or in series. Adjacent sub-modules 303 are electrically connected via busbars 305.

[0103] For adjacent solar cells 100, the upper n-electrode 5 and the lower p-electrode 2 are connected by wiring 304. The solar cell 100 of the fourth embodiment also has a substrate 1, p-electrode 2, p-type light-absorbing layer 3, n-type layer 4, and n-electrode 5, similar to the solar cell 100 of the second embodiment. Preferably, the two ends of the solar cells 100 in the sub-module 303 are connected to the busbar 305, and the busbar 305 electrically connects multiple sub-modules 303 in parallel or series, adjusting the output voltage of the second solar cell module 302. It should be noted that the connection configuration of the solar cell 100 shown in the fourth embodiment is an example; other connection configurations can be used to construct the solar cell module.

[0104] (Fifth implementation) The fifth embodiment relates to a solar power generation system. The solar cell module of the fifth embodiment can be used as a generator in the solar power generation system of the fifth embodiment. The solar power generation system of the embodiment is a system that uses a solar cell module to generate electricity; specifically, it includes a solar cell module for generating electricity, a mechanism for converting the generated electricity into power, and an energy storage mechanism for storing the generated electricity or a load for consuming the generated electricity. Figure 8 The diagram shows the configuration of a solar power generation system 400 according to an embodiment. Figure 8The solar power generation system includes a solar cell module 401 (300), a converter 402, a battery 403, and a load 404. Either the battery 403 or the load 404 may be omitted. The load 404 may also be configured to utilize the electrical energy stored in the battery 403. The converter 402 is a device containing circuits or components that perform power conversion, such as voltage transformation or DC-AC conversion, including DC-DC converters, DC-AC converters, and AC-AC converters. The configuration of the converter 402 can be optimized based on the generated voltage, the configuration of the battery 403, or the load 404.

[0105] The solar cell units in the solar cell module 401, which are located in the sub-module 303 after receiving sunlight, generate electricity. This electrical energy is converted by the converter 402 and stored in the battery 403 or consumed by the load 404. Preferably, the solar cell module 401 is equipped with a solar tracking drive device to ensure that the solar cell module 401 always faces the sun, a concentrator to focus sunlight, or additional devices to improve power generation efficiency.

[0106] The solar power generation system 400 is preferably used in immovable properties such as residences, commercial facilities, or factories, or in movable properties such as vehicles, aircraft, or electronic equipment. By using solar cells with excellent conversion efficiency in the implementation method in solar cell modules, an increase in power generation can be expected.

[0107] As an example of the use of the solar power generation system 400, a vehicle is shown. Figure 9 The diagram shows a conceptual design of vehicle 500. Figure 9 The vehicle 500 includes a body 501, a solar cell module 502, a power conversion device 503, a battery 504, a motor 505, and tires (wheels) 506. The electricity generated by the solar cell module 502, located on the upper part of the body 501, is converted by the power conversion device 503, and either charged by the battery 504 or consumed by loads such as the motor 505. Using the electricity supplied by the solar cell module 502 or the battery 504, the motor 505 rotates the tires (wheels) 506, thereby enabling the vehicle 500 to operate. The solar cell module 502 may not be multi-junction type, but may consist only of a first solar cell module, such as the solar cell 100 of the first embodiment. When using a transmissive solar cell module 502, it is preferable to use the solar cell module 502 as a power generation window on the side of the body 501, in addition to the upper part of the body 501.

[0108] As an example of the use of the solar power generation system 400, a flying vehicle (drone) is shown. The flying vehicle uses a solar cell module 401. The configuration of the flying vehicle involved in this embodiment is described below. Figure 10A simplified explanation is provided by a schematic diagram of the flying body 600. The flying body 600 includes a solar cell module 401, a frame 601, a motor 602, a rotor 603, and a control unit 604. The solar cell module 401, motor 602, rotor 603, and control unit 604 are disposed within the frame 601. The control unit 604 converts or adjusts the power output from the solar cell module 401. The motor 602 uses the power output from the solar cell module 401 to rotate the rotor 603. By manufacturing the flying body 600 of this configuration with the solar cell module 401 as described in this embodiment, a flying body capable of using more electricity for flight can be provided.

[0109] (Sixth implementation) The sixth embodiment relates to a display device. The display device has transparent electrodes that hold a liquid crystal layer or a light-emitting layer. Figure 11 This is a schematic diagram of a display device 700 using a transparent electrode 10. The display device 700 has a first electrode 701, a second electrode 702, and an intermediate layer 703 including a liquid crystal layer or a light-emitting layer. The transparent electrode 10 of the embodiment is used in the first electrode 701 and / or the second electrode 702. As the transparent electrode of the display device 700, the transparent electrode 10 having low resistance and high light transmittance is preferably used.

[0110] The present invention will now be described in more detail based on embodiments, but the present invention is not limited to the following embodiments.

[0111] (Example A) (Example A1) On a glass substrate 1, as the p-electrode 2 on the back side, ITO (In:Sn=80:20, film thickness 150 nm) and ATO (Sn:Sb=98:2, film thickness 100 nm) are deposited on the upper surface of the side in contact with the glass phase. A Cu2O layer with a thickness of 6 μm is formed on the ATO by sputtering in an oxygen and argon atmosphere as a p-type light-absorbing layer 3. After the formation of the p-type light-absorbing layer 3, a Ga2O3 film with a thickness of 10 nm is formed as an n-type layer 4. Then, a transparent electrode as an n-electrode 5 is formed by ALD with a thickness of 50 nm and an Al content of 5% relative to Zn. The ratio of u1(Zn):v1(Al):w1(O):x1(N):y1(H):z1(C) for the transparent electrode is 0.97466:0.04873:0.97466:0.00016:0.00162:0.00016. When forming the transparent electrode film, the amount of Al adhering per pulse is adjusted to a moderate level (based on the example). The film formation conditions are adjusted to maintain the same level of Al adhering per pulse as in Example A1.

[0112] A solar simulator simulating an AM1.5G light source was used. Under this light source, Si cells were used as a reference, and the light intensity was adjusted to 1 sun. Measurements were performed at atmospheric pressure, with the indoor temperature set to 25°C. Voltage was scanned, and the short-circuit current density Jsc (the value obtained by dividing the current by the cell area) was measured. With the horizontal axis set to voltage and the vertical axis to current density, the point where the horizontal axis intersects the short-circuit voltage Voc is defined. On the measurement curve, the point where the voltage multiplied by the short-circuit current density reaches its maximum is set as Vmpp and Jmpp (maximum power point), respectively. The formula FF = (Vmpp) / (Jmpp) is used to calculate the maximum power. Jmpp) / (Voc) The fill factor is calculated using Jsc. Additionally, Eff. = Voc. Jsc FF calculates the conversion efficiency.

[0113] Regarding light transmittance, a transmittance of 75% or more for light in the wavelength band of 700 nm to 1000 nm is evaluated as A; a transmittance of 70% or more but less than 75% for light in the wavelength band of 700 nm to 1000 nm is evaluated as B; and a transmittance of less than 70% for light in the wavelength band of 700 nm to 1000 nm is evaluated as C. The evaluation of light transmittance is common in Example A and in examples other than Example A.

[0114] Regarding Jsc, 11[mA / cm 2 The above situation is rated as A, and 8 [mA / cm 2 Above and below 11 [mA / cm] 2 The condition is rated B, and will be below 8 [mA / cm]. 2 The evaluation for [case name] is C. The evaluation for FF is common in both Example A and other examples.

[0115] Regarding Voc, cases with 1.2 [V] or higher are evaluated as A, cases with 1.1 [V] or higher and 1.2 [V] or lower are evaluated as B, and cases with 1.1 [V] are evaluated as C. The evaluation of Voc is common in both Example A and other examples.

[0116] Regarding FF, cases with a value of 0.65 or higher are rated A, cases with a value of 0.6 or higher but lower than 0.65 are rated B, and cases with a value of 0.6 or lower are rated C. The evaluation of FF is common in both Example A and other examples.

[0117] Regarding conversion efficiency, cases with a conversion efficiency of 8.5% or higher are rated A, cases with a conversion efficiency of 6% or higher but less than 8.5% are rated B, and cases with a conversion efficiency of less than 6% are rated C. The evaluation of conversion efficiency is common in Example A and in examples other than Example A.

[0118] Regarding the dispersion of the element represented by M0, in the n-electrode 5, the case where the first region R1 and the second region P1 are repeated more than twice in the thickness direction of the n-electrode 5 is evaluated as A, and the case where the first region R1 and the second region P1 are not repeatedly included in the thickness direction of the n-electrode 5 is evaluated as B. That is, when the dispersion of the element represented by M0 is evaluated as A, the element represented by M0 is dispersed in a sparse-dense distribution in the compound containing Zn, O and the element represented by M0 in the thickness direction of the transparent electrode 10. Furthermore, when the dispersion of the element represented by M0 is evaluated as A, the element represented by M0 is dispersed anisotropically in the compound containing Zn, O and the element represented by M0 in the thickness direction of the transparent electrode 10.

[0119] (Comparative Example A1-1) On a glass substrate 1, as the p-electrode 2 on the back side, ITO (In:Sn=80:20, film thickness 150 nm) and ATO (Sn:Sb=98:2, film thickness 100 nm) are deposited on the upper surface of the side in contact with the glass phase. A Cu2O layer with a thickness of 6 μm is formed on the ATO by sputtering in an oxygen and argon atmosphere as a p-type light-absorbing layer 3. After the formation of the p-type light-absorbing layer 3, a Ga2O3 film with a thickness of 10 nm is formed as an n-type layer 4. Then, an AZO (ZnO containing approximately 5% Al) transparent electrode with a thickness of 50 nm is formed by ALD as an n-electrode 5, resulting in a solar cell 100. u1(Zn):v1(Al):w1(O):x1(N):y1(H):z1(C) = 0.97466:0.04873:0.97466:0.00016:0.00162:0.00016. When forming a transparent electrode, film formation was performed such that the amount of Al attached per pulse in Comparative Example A1 was approximately twice the amount of Al attached per pulse of the element represented by Al in the example. The film formation conditions were adjusted to maintain the same level of Al attachment per pulse as in Comparative Example A1. To adjust the composition, the concentration variation of the element represented by M0 for one period (the sum of the average thickness of the first region R1 and the average thickness of the second region P1) was set to approximately twice. Then, the solar cell was evaluated in the same manner as in Example A1.

[0120] (Comparative Example A1-2) On a glass substrate 1, as the p-electrode 2 on the back side, ITO (In:Sn=80:20, film thickness 150 nm) and ATO (Sn:Sb=98:2, film thickness 100 nm) are deposited on the upper surface of the side in contact with the glass phase. A Cu2O layer with a thickness of 6 μm is formed on the ATO by sputtering in an oxygen and argon atmosphere as a p-type light-absorbing layer 3. After the formation of the p-type light-absorbing layer 3, a Ga2O3 film with a thickness of 10 nm is formed as an n-type layer 4. Then, an AZO (ZnO containing approximately 5% Al) transparent electrode with a thickness of 50 nm is formed by ALD as an n-electrode 5, resulting in a solar cell 100. u1(Zn):v1(Al):w1(O):x1(N):y1(H):z1(C) = 0.97466:0.04873:0.97466:0.00016:0.00162:0.00016. When forming a transparent electrode, film formation was performed such that the amount of Al attached per pulse in Comparative Example A1 was approximately half the amount of Al attached per pulse of the element represented by Al in the example. The film formation conditions were adjusted to maintain the same level of Al attachment per pulse as in Comparative Example A1. To adjust the composition, the concentration variation of the element represented by M0 for one period (the sum of the average thickness of the first region R1 and the average thickness of the second region P1) was set to approximately half. Then, the solar cell was evaluated in the same manner as in Example A1.

[0121] (Examples A2-A5, Comparative Examples A2-1-6-1, Comparative Examples A2-2-6-2) Solar cells 100 of Examples A2-A6, Comparative Examples A2-1-A6-1, and Comparative Examples A2-2-A6-2 were fabricated by changing the formation conditions of the n-electrode 5, which serves as the transparent electrode 10. The film formation conditions of the n-electrode 5 of the solar cell of Example A are shown below. Figure 12 The evaluation results of the solar cell of Example A are shown in the table. Figure 13 The film deposition conditions were adjusted such that the amount of element represented by M0 per pulse when forming a transparent electrode in the comparative example was approximately twice or approximately half the amount of element represented by M0 per pulse when forming a transparent electrode in the embodiment. The film deposition conditions were adjusted such that the amount of Al per pulse in both the embodiment and the comparative example was generally the same.

[0122] When forming the AZO transparent electrode of Example A, if the amount of Mo attached per pulse is greater than that of a medium level (example baseline), the R1+P1 period needs to be extended to make the Mo concentration uniform. If the amount of Mo attached per pulse increases, the layer becomes a resistive component, the insulation increases, and the Jsc and conversion efficiency decrease. Furthermore, since the R1+P1 period is longer, the ZnO layer with less Mo becomes thicker, thereby reducing the transmittance. On the other hand, if the amount of Mo attached per pulse is less than that of a medium level (example baseline), the R1+P1 period needs to be shortened to make the Mo concentration uniform. If the R1+P1 period is shorter, the layers containing Mo with high insulation become closer together, thus increasing the resistance of AZO, and reducing the Jsc and conversion efficiency. Since the layer of wide-bandgap oxide containing Mo increases, the transmittance increases.

[0123] (Example B) (Example B1) On a glass substrate 1, as the p-electrode 2 on the back side, ITO (In:Sn=80:20, film thickness 150 nm) and ATO (Sn:Sb=98:2, film thickness 100 nm) are deposited on the upper surface of the side in contact with the glass phase. A Cu2O layer with a thickness of 6 μm is formed on the ATO by sputtering in an oxygen and argon atmosphere as a p-type light-absorbing layer 3. After the formation of the p-type light-absorbing layer 3, a Ga2O3 film with a thickness of 10 nm is formed as an n-type layer 4 (the 1n layer). A ZnSnO (Zn:Sn=80:20) film with a thickness of 14 nm is formed on the Ga2O3 as the 2n layer. Then, an AZO (ZnO containing approximately 5% Al) transparent electrode with a thickness of 50 nm is formed by ALD as the n-electrode 5, resulting in a solar cell 100. u1(Zn):v1(Al):w1(O):x1(N):y1(H):z1(C) = 0.97466:0.04873:0.97466:0.00016:0.00162:0.00016. When forming a transparent electrode film, the Al deposition amount per pulse was adjusted to a generally moderate level. The film formation conditions were adjusted to the same level as in Example B1. Then, the solar cell was evaluated in the same manner as in Example A1.

[0124] (Comparative Example B1-1) On a glass substrate 1, as the p-electrode 2 on the back side, ITO (In:Sn=80:20, film thickness 150 nm) and ATO (Sn:Sb=98:2, film thickness 100 nm) are deposited on the upper surface of the side in contact with the glass phase. A Cu2O layer with a thickness of 6 μm is formed on the ATO by sputtering in an oxygen and argon atmosphere as a p-type light-absorbing layer 3. After the formation of the p-type light-absorbing layer 3, a Ga2O3 film with a thickness of 10 nm is formed as an n-type layer 4. A ZnSnO (Zn:Sn=80:20) film with a thickness of 14 nm is formed on the Ga2O3 as the second n layer. Then, an AZO (ZnO containing approximately 5% Al) transparent electrode with a thickness of 50 nm is formed by ALD as the n-electrode 5, resulting in a solar cell 100. u1(Zn):v1(Al):w1(O):x1(N):y1(H):z1(C) = 0.97466:0.04873:0.97466:0.00016:0.00162:0.00016. When forming a transparent electrode, film formation was performed such that the overall Al deposition per pulse was approximately twice the deposition per pulse of the element represented by Al in the example. The film formation conditions were adjusted to be approximately the same as those in Comparative Example B1. To adjust the composition, the concentration variation of the element represented by M0 for one period (the sum of the average thickness of the first region R1 and the average thickness of the second region P1) was set to approximately twice. Then, the solar cell was evaluated in the same manner as in Example A1.

[0125] (Comparative Example B1-2) On a glass substrate 1, as the p-electrode 2 on the back side, ITO (In:Sn=80:20, film thickness 150 nm) and ATO (Sn:Sb=98:2, film thickness 100 nm) are deposited on the upper surface of the side in contact with the glass phase. A Cu2O layer with a thickness of 6 μm is formed on the ATO by sputtering in an oxygen and argon atmosphere as a p-type light-absorbing layer 3. After the formation of the p-type light-absorbing layer 3, a Ga2O3 film with a thickness of 10 nm is formed as an n-type layer 4. A ZnSnO (Zn:Sn=80:20) film with a thickness of 14 nm is formed on the Ga2O3 as the second n layer. Then, an AZO (ZnO containing approximately 5% Al) transparent electrode with a thickness of 50 nm is formed by ALD as the n-electrode 5, resulting in a solar cell 100. u1(Zn):v1(Al):w1(O):x1(N):y1(H):z1(C) = 0.97466:0.04873:0.97466:0.00016:0.00162:0.00016. When forming a transparent electrode, film formation was performed such that the amount of Al attached per pulse was approximately half the amount of Al representing the element attached per pulse during the formation of the transparent electrode in Example A1. The film formation conditions were adjusted to be approximately the same as those in Comparative Example B1. To adjust the composition, the concentration variation of the element represented by M0 for one period (the sum of the average thickness of the first region R1 and the average thickness of the second region P1) was set to approximately half. Then, the solar cell was evaluated in the same manner as in Example A1.

[0126] (Examples B2-B5, Comparative Examples B2-1-B6-1, Comparative Examples B2-2-B6-2) Solar cells of Examples B2-B6, Comparative Examples B2-1-B6-1, and Comparative Examples B2-2-B6-2 were fabricated by changing the formation conditions of the n-electrode 5, which serves as the transparent electrode 10. The film formation conditions of the n-electrode 5 of the solar cell of Example B are shown below. Figure 14 The evaluation results of the solar cell of Example B are shown in the table. Figure 15 The film deposition conditions were adjusted such that the amount of element represented by M0 per pulse when forming a transparent electrode in the comparative example was approximately twice or approximately half the amount of element represented by M0 per pulse when forming a transparent electrode in the embodiment. The film deposition conditions were adjusted such that the amount of Al per pulse in both the embodiment and the comparative example was generally the same.

[0127] In Example A, the AZO transparent electrode was deposited on a Ga2O3 film, while in Example B, it was deposited on a ZnSnO film. Regardless of the substrate, the solar cell performance and transmittance exhibited the same characteristics through the AZO transparent electrode.

[0128] The embodiments of the present invention have been described above, but the present invention is not limited to the above embodiments. During implementation, the constituent elements can be modified and embodied without departing from its spirit. Furthermore, various inventions can be formed through suitable combinations of the multiple constituent elements disclosed in the above embodiments. For example, constituent elements from different embodiments can be appropriately combined as in the variations.

[0129] Some elements in the instruction manual are represented only by element symbols.

[0130] The technical solutions for the implementation methods are described below.

[0131] Technical Solution 1 A transparent electrode, wherein a compound comprising elements represented by Zn, O, and Mo is used as the main component. The element represented by M0 is dispersed in a sparse-dense distribution in the thickness direction of the compound containing Zn, O and the element represented by M0.

[0132] Technical Solution 2 According to the transparent electrode described in technical solution 1, the first region with a high ratio of the element represented by M0 and the second region with a low ratio of the element represented by M0 alternately and repeatedly exist more than twice in the thickness direction.

[0133] Technical Solution 3 The transparent electrode according to either technical solution 1 or 2, wherein the compound further comprises N.

[0134] Technical Solution 4 According to any one of the technical solutions 1 to 4, the transparent electrode in the transparent electrode is an element represented by M0, which is 1 [atomic%] or more and 10 [atomic%] or less.

[0135] Technical Solution 5 According to the transparent electrode described in technical solution 2, the element represented by M0 is 3 [atomic%] or more and 10 [atomic%] or less in the first region. The elements in region 2 above that have 1 or more atoms and less than 8 atoms are those represented by M0.

[0136] Technical Solution 6 According to the transparent electrode described in technical solution 2 or 5, in the first region, there is a relationship of Zn:M0:O:N:H:C=u3:v3:w3:x3:y3:z3, satisfying u3+v3+w3+x3+y3+z3=2; in the second region, there is a relationship of Zn:M0:O:N:H:C=u4:v4:w4:x4:y4:z4, satisfying u4+v4+w4+x4+y4+z4=2, where v3 is more than 1.194 times and less than 3.885 times v4.

[0137] Technical Solution 7 According to any one of technical solutions 2, 5, and 6, the transparent electrode, in the above-mentioned compound containing elements represented by Zn, O, and Mo, has the relationship Zn:Mo:O:N:H:C=u1:v1:w1:x1:y1:z1, satisfying u1+v1+w1+x1+y1+z1=2, 0.95≤(u1+v1)≤1.15, u1>0, and v1>0. In the first region mentioned above, the relationship Zn:M0:O:N:H:C=u3:v3:w3:x3:y3:z3 exists, satisfying u3+v3+w3+x3+y3+z3=2. In the second region mentioned above, the relationship Zn:M0:O:N:H:C=u4:v4:w4:x4:y4:z4 exists, satisfying u4+v4+w4+x4+y4+z4=2. v3 is more than 1.194 times and less than 3.885 times v4, u3 is more than 0.971 times and less than 0.995 times u4, w3 is more than 0.971 times and less than 0.995 times w4, y3 is more than 0.971 times and less than 0.995 times y4, z3 is more than 0.971 times and less than 0.995 times z4, and u3 is more than 0.986 times and less than 0.995 times u1. Below 0.995 times, v3 is more than 1.194 times and less than 1.577 times v1, w3 is more than 0.986 times and less than 0.995 times w1, x3 is more than 0.986 times and less than 0.995 times x1, y3 is more than 0.986 times and less than 0.995 times y1, z3 is more than 0.986 times and less than 0.995 times z1, and u4 is 1 times u1. 0.000 times or more and less than 1.015 times, v4 is more than 0.406 times or more than 1.000 times v1, w4 is more than 1.000 times or more than 1.015 times w1, x4 is more than 1.000 times or more than 1.015 times x1, y4 is more than 1.000 times or more than 1.015 times y1, and z4 is more than 1.000 times or more than 1.015 times z1.

[0138] Technical Solution 8 According to any one of the technical solutions 1 to 7, the transparent electrode is composed of a compound containing the elements represented by Zn, O and Mo, comprising 95% to 100% of the transparent electrode.

[0139] Technical Solution 9 According to any one of the technical solutions 1 to 8, the transparent electrode, wherein the period of the concentration change of the element represented by M0 in the thickness direction of the transparent electrode is 0.8 [nm] or more and 2 [nm] or less.

[0140] Technical Solution 10 According to any one of technical solutions 2, 5 to 7, the transparent electrode in which the first and second regions alternately and repeatedly exist more than twice in the thickness direction of the transparent electrode is 80% or more and 100% or less of the thickness of the transparent electrode.

[0141] Technical Solution 11 A solar cell having: p electrode, n-electrode, A p-type light-absorbing layer, mainly composed of cuprous oxide compounds, is disposed on the aforementioned p-electrode. The n-type layer disposed between the p-type light-absorbing layer and the n-electrode, and The transparent electrode is provided in any of the technical solutions 1 to 10 on the aforementioned n-type layer.

[0142] Technical Solution 12 A multi-junction solar cell uses the solar cell described in technical solution 11.

[0143] Technical Solution 13 A solar cell module that uses the solar cell described in technical solution 11.

[0144] Technical Solution 14 A solar power generation system that uses the solar cell module described in technical solution 13 to generate electricity.

[0145] Explanation of symbols 10: Transparent Electrode 1: Substrate 2: p electrode 3: p-type light absorption layer 4: n-type layer 5: n electrode 100: Solar cells 200: Multijunction Solar Cell 201: Second solar cell 300: Solar cell module 301: First Solar Cell Module 302: Second solar cell module 303: Submodule 304: Wiring 305: Busbar 400: Solar power generation system 401: Solar cell module 402: Converter 403: Storage battery 404: Overload 500: Vehicles 501: Vehicle body 502: Solar cell module 503: Power conversion device 504: Storage battery 505: Motor 600: Flying Body 601: Body Skeleton 602: Motor 603: Rotary Wing 604: Control Unit

Claims

1. A transparent electrode, wherein, The main body consists of compounds containing elements represented by Zn, O, and Mo. The element represented by M0 is dispersed in a sparse-dense distribution in the thickness direction of the compound containing Zn, O and the element represented by M0.

2. The transparent electrode according to claim 1, wherein, The first region, where the element represented by M0 has a high ratio, and the second region, where the element represented by M0 has a low ratio, alternately and repeatedly exist more than twice in the thickness direction.

3. The transparent electrode according to claim 1 or 2, wherein, The compound further contains N.

4. The transparent electrode according to any one of claims 1 to 3, wherein, The transparent electrode contains 1% to 10% of the element represented by M0.

5. The transparent electrode according to claim 2, wherein, The elements in the first region that are 3% or more and 10% or less are those represented by M0. In the second region, elements representing M0 are 1 atom% or more and 8 atom% or less.

6. The transparent electrode according to claim 2 or 5, wherein, In the first region, there is a relationship Zn:M0:O:N:H:C=u3:v3:w3:x3:y3:z3, satisfying u3+v3+w3+x3+y3+z3=2. In the second region, there is a relationship Zn:M0:O:N:H:C=u4:v4:w4:x4:y4:z4, satisfying u4+v4+w4+x4+y4+z4=2, where v3 is more than 1.194 times and less than 3.885 times v4.

7. The transparent electrode according to any one of claims 2, 5, and 6, wherein, In the compounds containing elements represented by Zn, O, and M0, the relationship Zn:M0:O:N:H:C = u1:v1:w1:x1:y1:z1 is satisfied, with u1+v1+w1+x1+y1+z1=2, 0.95≤(u1+v1)≤1.15, u1>0, and v1>0. In the first region, the relationship Zn:M0:O:N:H:C=u3:v3:w3:x3:y3:z3 exists, satisfying u3+v3+w3+x3+y3+z3=2. In the second region, the relationship Zn:M0:O:N:H:C=u4:v4:w4:x4:y4:z4 exists, satisfying u4+v4+w4+x4+y4+z4=2. v3 is greater than 1.194 times and less than 3.885 times v4; u3 is greater than 0.971 times and less than 0.995 times u4; w3 is greater than 0.971 times and less than 0.995 times w4; y3 is greater than 0.971 times and less than 0.995 times y4; z3 is greater than 0.971 times and less than 0.995 times z4; and u3 is greater than 0.986 times and less than 0.995 times u1. Below 0.995 times, v3 is more than 1.194 times and less than 1.577 times v1, w3 is more than 0.986 times and less than 0.995 times w1, x3 is more than 0.986 times and less than 0.995 times x1, y3 is more than 0.986 times and less than 0.995 times y1, z3 is more than 0.986 times and less than 0.995 times z1, and u4 is 1 times u1. =000 times or more and less than 1.015 times, v4 is more than 1.000 times or more and less than 1.015 times of v1, w4 is more than 1.000 times or more and less than 1.015 times of w1, x4 is more than 1.000 times or more and less than 1.015 times of x1, y4 is more than 1.000 times or more and less than 1.015 times of y1, z4 is more than 1.000 times or more and less than 1.015 times of z1.

8. The transparent electrode according to any one of claims 1 to 7, wherein, The transparent electrode comprises 95 wt% to 100 wt% of a compound containing the elements represented by Zn, O and Mo.

9. The transparent electrode according to any one of claims 1 to 8, wherein, The period of the concentration change of the element represented by M0 in the thickness direction of the transparent electrode is greater than 0.8 nm and less than 2 nm.

10. The transparent electrode according to any one of claims 2, 5 to 7, wherein, The range in which the first and second regions alternately and repeatedly exist more than twice in the thickness direction of the transparent electrode is more than 80% and less than 100% of the thickness of the transparent electrode.

11. A solar cell having: p electrode, n-electrode, A p-type light-absorbing layer, mainly composed of cuprous oxide compounds, is disposed on the p-electrode. The n-type layer disposed between the p-type light-absorbing layer and the n-electrode, and The transparent electrode according to any one of claims 1 to 10 is disposed on the n-type layer.

12. A multijunction solar cell using the solar cell of claim 11.

13. A solar cell module that uses the solar cell of claim 11.

14. A solar power generation system that uses the solar cell module of claim 13 to generate electricity.

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