Assembly system for component of substrate processing apparatus and assembly method for component of substrate processing apparatus

Abstract

In the disclosed component assembly system for a substrate processing apparatus, a robot transports a component to a designated position in the substrate processing apparatus. The image sensor acquires an image of an upper surface of a substrate support portion and a component of a semiconductor manufacturing apparatus. The measuring unit obtains at least four distances by obtaining the distance between each of at least two measuring points in the component and each of at least two reference points in the upper surface of the substrate support unit from the image. The control unit controls the robot to convey the component to a designated position on the basis of a result of comparison between the at least four distances and the at least four reference distances. The at least four reference distances are the at least four distances when the component is conveyed to the designated position and are set in advance.

Description

Technical Field

[0001] The exemplary embodiments of the present invention relate to an assembly system for components of a substrate processing apparatus and a method for assembling components of a substrate processing apparatus. Background Technology

[0002] In semiconductor manufacturing, substrate processing apparatuses are used. Patent Document 1 below discloses a plasma processing apparatus, which is one type of substrate processing apparatus. The substrate processing apparatus consists of multiple parts. Typically, each of the multiple parts is assembled into the substrate processing apparatus using locating pins and / or fixtures.

[0003] Previous technical documents Patent documents Patent Document 1: Japanese Patent Application Publication No. 2020-191351 Summary of the Invention

[0004] The technical problem to be solved by the invention This invention provides a technique for assembling components of a substrate processing device with high precision and high reproducibility.

[0005] means for solving technical problems In one exemplary embodiment, an assembly system for parts of a substrate processing apparatus is provided. The assembly system includes a robot, an image sensor, a measuring unit, and a control unit. The robot is configured to move the parts to a designated position within the substrate processing apparatus. The image sensor is configured to acquire images of the upper surface of a substrate support portion of the substrate processing apparatus and the parts. The measuring unit is configured to acquire at least four distances by determining the distances between at least two measuring points within the parts and at least two reference points within the upper surface of the substrate support portion based on the images acquired by the image sensor. The control unit is configured to control the robot to move the parts to the designated position based on comparisons between the at least four distances acquired by the measuring unit and the at least four reference distances. The at least four reference distances are the aforementioned at least four distances when the parts are moved to the designated position, and are preset.

[0006] Invention Effects According to one exemplary embodiment, a technique is provided for assembling components of a substrate processing apparatus with high precision and high reproducibility. Attached Figure Description

[0007] Figure 1 This is a diagram showing an assembly system of parts of a substrate processing apparatus according to an exemplary embodiment.

[0008] Figure 2 This is a diagram that schematically illustrates a substrate processing apparatus according to an exemplary embodiment.

[0009] Figure 3This is a perspective view of an assembly system according to an exemplary embodiment.

[0010] Figure 4 It is a diagram showing multiple distances determined in an assembly system according to an exemplary embodiment.

[0011] Figure 5 This is a flowchart of a method for assembling parts of a substrate processing apparatus according to an exemplary embodiment. Detailed Implementation

[0012] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. Furthermore, in each drawing, the same or equivalent parts are labeled with the same symbols.

[0013] Figure 1 This is a diagram showing an assembly system of parts of a substrate processing apparatus according to an exemplary embodiment. Figure 1 The assembly system shown (hereinafter referred to as "system 100") includes a robot 102, an image sensor 104, a measuring unit 106, and a control unit 108. System 100 may also include a robot 105. System 100 is configured to assemble the components of a substrate processing apparatus within a substrate processing apparatus using the robot 102.

[0014] Figure 2 This is a schematic diagram illustrating a substrate processing apparatus according to an exemplary embodiment. In one embodiment, system 100 can be used as a substrate processing apparatus... Figure 2 The assembly of components of the plasma processing apparatus 1 shown is illustrated. Alternatively, the system 100 can also be used for assembling components of a substrate processing apparatus different from the plasma processing apparatus 1.

[0015] like Figure 2 As shown, the plasma processing apparatus 1 includes a chamber 10. The chamber 10 provides an internal space 10s inside it. The internal space 10s can be depressurized. Plasma is generated in the internal space 10s.

[0016] In one embodiment, the chamber 10 may include a chamber body 12 and a top 14. The chamber body 12 forms the sidewalls and bottom of the chamber 10. The chamber body 12 has a generally cylindrical shape. The central axis of the chamber body 12 is substantially aligned with an axis AX extending in the vertical direction. The chamber body 12 is electrically grounded. The chamber body 12 is formed, for example, of aluminum. A corrosion-resistant film is formed on the surface of the chamber body 12. The corrosion-resistant film is formed, for example, of a material such as alumina or yttrium oxide.

[0017] An opening 12p is formed on the side wall of the chamber 10. The opening 12p is provided by the chamber body 12. The opening 12p can be opened and closed by a gate valve 12g. When the substrate W is transported between the internal space 10s and the outside of the chamber 10, it passes through the opening 12p.

[0018] In one embodiment, the chamber body 12 includes a first component 12a and a second component 12b. The first component 12a has a generally cylindrical shape. The first component 12a forms part of the bottom and sidewall of the chamber 10. The second component 12b has a generally cylindrical shape. The second component 12b is disposed on the first component 12a. The second component 12b forms another part of the sidewall of the chamber 10. The second component 12b provides an opening 12p.

[0019] The plasma processing apparatus 1 also includes a substrate support 16. The substrate support 16 is disposed in the internal space 10s. The substrate support 16 is configured to support a substrate W placed on its upper surface. A base plate 17 is provided below the substrate support 16. The base plate 17 is supported by the bottom of the chamber 10, for example, the first component 12a. A support body 18 extends upward from the base plate 17. The support body 18 has a generally cylindrical shape. The support body 18 is formed, for example, by an insulator such as quartz. The substrate support 16 is mounted on the support body 18 and supported by the support body 18.

[0020] The substrate support portion 16 includes a base 20 and an electrostatic chuck 22. The substrate support portion 16 may also include an electrode plate 24. The electrode plate 24 has a generally disc-shaped form. The central axis of the electrode plate 24 is approximately aligned with axis AX. The electrode plate 24 is formed of a conductor such as aluminum.

[0021] A base 20 is disposed on an electrode plate 24. The base 20 is electrically connected to the electrode plate 24. The base 20 has a generally disc-shaped form. The central axis of the base 20 is approximately aligned with axis AX. The base 20 is formed of a conductor such as aluminum. A flow path 20f is formed in the base 20. The flow path 20f extends, for example, in a vortex-like shape. Refrigerant is supplied from a cooling unit 26 to the flow path 20f. The cooling unit 26 is disposed outside the chamber 10. The cooling unit 26, for example, supplies liquid refrigerant to the flow path 20f. The refrigerant supplied to the flow path 20f returns to the cooling unit 26.

[0022] An electrostatic chuck 22 is disposed on a base 20. The electrostatic chuck 22 includes a body and an electrode 22a. The body of the electrostatic chuck 22 has a generally disc-shaped form. The central axis of the electrostatic chuck 22 and its body is axis AX. The body of the electrostatic chuck 22 is formed of ceramic. The electrode 22a is a film formed of a conductor. The electrode 22a is disposed within the body of the electrostatic chuck 22. A DC power supply 22d is connected to the electrode 22a via a switch 22s. When the substrate W is held by the electrostatic chuck 22, a voltage from the DC power supply 22d is applied to the electrode 22a. When a voltage is applied to the electrode 22a, an electrostatic attraction is generated between the electrostatic chuck 22 and the substrate W. By the generated electrostatic attraction, the substrate W is attracted by the electrostatic chuck 22 and held by the electrostatic chuck 22. The plasma processing apparatus 1 can provide a gas conduit for supplying a heat transfer gas (e.g., helium) to the gap between the electrostatic chuck 22 and the back surface of the substrate W.

[0023] A focusing ring FR is disposed on the periphery of the electrostatic chuck 22, surrounding the substrate W. The focusing ring FR is used to improve the in-plane uniformity of plasma processing of the substrate W. The focusing ring FR is formed, for example, of silicon, quartz, or silicon carbide. A ring 27 is disposed between the focusing ring FR and the base 20. The ring 27 is formed of an insulator.

[0024] In one embodiment, the plasma processing apparatus 1 may further include a cylindrical portion 28 and a cylindrical portion 29. The cylindrical portion 28 extends along the outer periphery of the substrate support portion 16 and the support body 18. The cylindrical portion 28 is disposed on the cylindrical portion 29. The cylindrical portion 28 is formed of a corrosion-resistant insulator. The cylindrical portion 28 is formed, for example, of quartz. The cylindrical portion 29 extends along the outer periphery of the support body 18. The cylindrical portion 29 is formed of a corrosion-resistant insulator. The cylindrical portion 29 is formed, for example, of quartz.

[0025] The top 14 is configured to close the upper opening of the chamber 10. The top 14 includes an upper electrode 30. The top 14 may also include components 32 and 34. Component 32 is a generally annular plate formed of a metal such as aluminum. Component 32 is disposed on the side wall of the chamber 10 via a wall component 58 described later. Component 34 is disposed between the upper electrode 30 and component 32. Component 34 extends circumferentially relative to the axis AX. Component 34 is formed of an insulator such as quartz. Additionally, a sealing component such as an O-ring is inserted between the upper electrode 30 and component 34. A sealing component such as an O-ring is inserted between component 34 and component 32.

[0026] The upper electrode 30 includes a top plate 36 and a support 38. The top plate 36 has a generally disk-shaped form. The top plate 36 is connected to the internal space 10s. A plurality of gas injection holes 36h are formed on the top plate 36. The plurality of gas injection holes 36h penetrate the top plate 36 in the thickness direction (vertical direction). The top plate 36 is formed of silicon, alumina, or quartz. Alternatively, the top plate 36 may also be constructed by forming a corrosion-resistant film on the surface of a component made of a conductor such as aluminum. The corrosion-resistant film is formed, for example, of materials such as alumina or yttrium oxide.

[0027] A support body 38 is disposed on a top plate 36. The support body 38 detachably supports the top plate 36. The support body 38 is formed, for example, of aluminum. A flow path 38f is formed in the support body 38. The flow path 38f extends in a vortex shape within the support body 38, for example. Refrigerant is supplied from a cooling unit 40 to the flow path 38f. The cooling unit 40 is disposed outside the chamber 10. The cooling unit 40 supplies liquid refrigerant (e.g., cooling water) to the flow path 38f. The refrigerant supplied to the flow path 38f returns to the cooling unit 40. The cooling unit 40 is capable of supplying refrigerant to the flow path 38f at a flow rate of, for example, 4 L / min or more.

[0028] A gas diffusion chamber 38d is formed inside the support body 38. Multiple holes 38h are formed on the support body 38. These holes 38h extend downwards from the gas diffusion chamber 38d and are connected to multiple gas injection holes 36h. A port 38p is provided on the support body 38. The port 38p is connected to the gas diffusion chamber 38d. A gas source group 41 is connected to the port 38p via a valve group 42, a flow controller group 43, and a valve group 44.

[0029] Gas source group 41 includes multiple gas sources. Valve groups 42 and 44 each include multiple valves. Flow controller group 43 includes multiple flow controllers. These multiple flow controllers are either mass flow controllers or pressure-controlled flow controllers. Each of the multiple gas sources in gas source group 41 is connected to port 38p via a corresponding valve in valve group 42, a corresponding flow controller in flow controller group 43, and a corresponding valve in valve group 44. In plasma processing apparatus 1, gas from one or more gas sources selected from the multiple gas sources in gas source group 41 is supplied to gas diffusion chamber 38d. The gas supplied to gas diffusion chamber 38d is supplied to the internal space 10s through multiple gas injection holes 36h.

[0030] The plasma processing apparatus 1 also includes a high-frequency power supply 51 and a bias power supply 52. ​​The high-frequency power supply 51 is a source of high-frequency power for generating plasma from gas within the chamber 10. The frequency of the source high-frequency power is, for example, 27 MHz or higher. The high-frequency power supply 51 is connected to a high-frequency electrode via a matching device 53. The high-frequency electrode is an electrode within the substrate support 16 (e.g., base 20) or an upper electrode 30. The matching device 53 has a matching circuit for matching the load impedance of the high-frequency power supply 51 with the output impedance of the high-frequency power supply 51.

[0031] The bias power supply 52 is a power supply that generates an electrical bias for introducing ions into the substrate W. The electrical bias has a bias frequency. The bias frequency is, for example, 13.56 MHz or less. The electrical bias can be a high-frequency bias power supply with a bias frequency. In this case, the bias power supply 52 is electrically connected to a bias electrode (e.g., base 20) within the substrate support 16 via a matching unit 54. The matching unit 54 has a matching circuit for matching the load impedance of the bias power supply 52 with the output impedance of the bias power supply 52. ​​Alternatively, the electrical bias can be voltage pulses generated periodically at time intervals that are the reciprocal of the bias frequency. In this case, the bias power supply 52 is connected to the bias electrode without passing through the matching unit 54.

[0032] The plasma processing apparatus 1 also includes a wall component 58. The wall component 58 is partially disposed within the interior space 10s. That is, a portion of the wall component 58 is exposed to plasma within the interior space 10s. The wall component 58 extends from the interior space 10s toward the outside of the chamber 10 and is exposed to the space outside the chamber 10.

[0033] In one embodiment, the wall member 58 extends along the inner wall surface of the chamber 10 to suppress the accumulation of byproducts generated by plasma treatment on the inner wall surface of the chamber 10. Specifically, the wall member 58 extends along the inner wall surface of the chamber body 12 or the inner wall surface of the second component 12b. The wall member 58 has a generally cylindrical shape. The wall member 58 can be constructed by forming a corrosion-resistant film on the surface of a conductive component such as aluminum. The corrosion-resistant film is formed, for example, from materials such as alumina or yttrium oxide. In addition, the wall member 58 is connected to a ground wire, and its potential is set to the ground potential.

[0034] In one embodiment, the wall component 58 is clamped between the chamber body 12 and the top 14. For example, the wall component 58 is clamped between the second component 12b of the chamber body 12 and the component 32 of the top 14.

[0035] In one embodiment, the plasma processing apparatus 1 may further include a spacer 59. The spacer 59 is plate-shaped and extends circumferentially around axis AX. The spacer 59 is disposed between the wall member 58 and the chamber 10. The spacer 59 is formed, for example, of a conductor. The spacer 59 may be formed of a material having a lower thermal conductivity than aluminum. The spacer 59 may be formed, for example, of stainless steel. The spacer 59 may be formed of any material other than stainless steel, as long as it is a material having a lower thermal conductivity than aluminum. Alternatively, the spacer 59 may be formed of aluminum.

[0036] In one embodiment, a spacer 59 is disposed between the wall member 58 and the second member 12b. In another embodiment, the spacer 59 and the second member 12b are fixed to the first member 12a using bolts 60a. The bolts 60a thread through the spacer 59 and the second member 12b and screw into the threaded hole of the first member 12a. The wall member 58 is fixed to the spacer 59 using bolts 60b. The bolts 60b thread through the wall member 58 and screw into the threaded hole of the spacer 59. According to this embodiment, even if the wall member 58 is removed from the chamber 10 for maintenance, the spacer 59 and the second member 12b remain fixed to the first member 12a by the bolts 60a. Therefore, the wall member 58 can be removed from the chamber 10 while the spacer 59 and the second member 12b are fixed.

[0037] In one embodiment, the plasma processing apparatus 1 further includes a heater unit 62. The heater unit 62 includes a main body 62m and a heater 62h. The heater 62h is configured to heat a wall component 58. The heater 62h may be a resistance heating element. The heater 62h is disposed within the main body 62m. The main body 62m is in thermal contact with the wall component 58. In one embodiment, the main body 62m is in physical contact with the wall component 58. The main body 62m is formed of a conductor such as aluminum. The heater 62h is configured to heat the wall component 58 through the main body 62m. In one embodiment, the main body 62m is a generally annular plate and extends circumferentially to surround the upper electrode 30.

[0038] The plasma processing apparatus 1 also includes a grounding component 56. The grounding component 56 can form part of the top 14. The grounding component 56 is formed of silicon (e.g., polycrystalline silicon). The grounding component 56 is disposed in the internal space 10s, that is, in the space where plasma is formed. The grounding component 56 is connected to a ground wire. Both the grounding component 56 and the wall component 58 are set to ground potential.

[0039] In one embodiment, the grounding member 56 is a generally annular plate. The grounding member 56 extends circumferentially in the region radially outer of the top plate 36. Radial is the radial direction relative to the axis AX. The heater unit 62 is disposed between the grounding member 56 and member 32 and between member 34 and wall member 58.

[0040] A sealing component, such as an O-ring, is provided between the main body 62m and its surrounding components to separate the depressurized environment, including the internal space 10s, from the atmospheric pressure environment. Specifically, a sealing component is provided between the main body 62m and component 32. Furthermore, a sealing component is provided between the main body 62m and wall component 58.

[0041] In one embodiment, a baffle member 72 with multiple through holes is provided between the wall member 58 and the support 18. In one embodiment, the baffle member 72 has a generally cylindrical shape. The upper end of the baffle member 72 is formed as a flange. The lower end of the baffle member 72 is formed as a generally annular shape, extending radially inward. The outer edge of the upper end of the baffle member 72 is joined to the lower end of the wall member 58. The inner edge of the lower end of the baffle member 72 is clamped between the cylindrical portion 29 and the base plate 17. The baffle member 72 is formed of a conductive plate such as aluminum. A corrosion-resistant film is formed on the surface of the baffle member 72. The corrosion-resistant film is formed, for example, of alumina or yttrium oxide. Multiple through holes are formed on the baffle member 72.

[0042] The interior space 10s includes an exhaust region extending below the baffle member 72. An exhaust device 74 is connected to the exhaust region. The exhaust device 74 includes a pressure regulator such as an automatic pressure control valve and a pressure reducing pump such as a turbomolecular pump.

[0043] An opening 58p is formed on the wall member 58. The opening 58p is formed on the wall member 58 in a manner opposite to the opening 12p. When the substrate W is transported between the internal space 10s and the outside of the chamber 10, it passes through the opening 12p and the opening 58p.

[0044] In one embodiment, the plasma processing apparatus 1 may further include a baffle mechanism 76. The baffle mechanism 76 is configured to open and close the opening 58p. The baffle mechanism 76 has a valve body 76v and a shaft 76s. The baffle mechanism 76 may also have a cylinder 76a and a drive unit 76d.

[0045] The valve body 76v closes the opening 58p when positioned within it. The valve body 76v is supported by a shaft 76s; that is, the shaft 76s is connected to the valve body 76v. The shaft 76s extends downward from the valve body 76v. The shaft 76s is generally cylindrical. A heater may be provided in the upper end of the shaft 76s. The valve body 76v is heated by this heater.

[0046] The cylindrical body 76a is cylindrical in shape. The cylindrical body 76a is directly or indirectly fixed to the chamber body 12. The shaft 76s can move vertically through the interior of the cylindrical body 76a. A drive unit 76d generates power to move the shaft 76s vertically. The drive unit 76d may include, for example, a motor. A sealing portion is provided inside the cylindrical body 76a between the cylindrical body 76a and the shaft 76s. This sealing portion is not limited and may be an O-ring or a magnetic fluid seal. Furthermore, the gap between the cylindrical body 76a and the chamber body 12 is sealed by a wall seal to ensure the airtightness of the internal space 10s.

[0047] In one embodiment, the plasma processing apparatus 1 may further include a supply unit 78. The supply unit 78 is configured to supply refrigerant to the cavity inside the shaft 76s. The refrigerant may be, for example, air, cooling air, or an inert gas. By supplying refrigerant to the interior of the shaft 76s of the baffle mechanism 76, the valve body 76v is indirectly cooled. Therefore, it is not necessary to directly supply refrigerant to the valve body 76v, but it is possible to indirectly cool the valve body 76v.

[0048] In one embodiment, the plasma processing apparatus 1 may further include a control unit 80. The control unit 80 is configured to control various parts of the plasma processing apparatus 1. The control unit 80 is, for example, a computer device. The control unit 80 has a processor, a storage unit, an input device such as a keyboard, a display device, and a signal input / output interface. The storage unit stores control programs and recipe data. The processor executes the control program and, according to the recipe data, sends control signals to various parts of the plasma processing apparatus 1 via the input / output interface.

[0049] The following, with Figure 1 and Figure 2 For reference Figure 3 The system 100 will be described in detail. Figure 3 This is a perspective view of an assembly system according to an exemplary embodiment. In system 100, robot 102 is configured to transport a part 200 of the substrate processing apparatus to a designated position within the substrate processing apparatus. Robot 102 may, for example, have a robotic arm as a multi-joint arm. Robot 102 is controlled by control unit 108. Robot 102 has a manipulator at the end of its arm. Part 200 is transported while being supported or held by the manipulator. In addition, the part 200 transported by robot 102 may, for example, be the valve body 76v described above. Furthermore, the part 200 transported by robot 102 may be a baffle member 72, a grounding member 56, and / or a wall member 58.

[0050] Image sensor 104 is configured to acquire images of the upper surface of substrate support 16 (the upper surface of electrostatic chuck 22) and part 200. Image sensor 104 can be disposed above substrate processing apparatus. The position of image sensor 104 can be fixed. Alternatively, image sensor 104 can be movable. For example, image sensor 104 can be held and moved by robot 105. Robot 105 can be controlled by control unit 108.

[0051] Image sensor 104 can acquire images of the upper surface of the substrate support 16 (the upper surface of the electrostatic chuck 22) and the part 200 as a single image. Alternatively, image sensor 104 can acquire images of the upper surface of the substrate support 16 and the part 200 separately. In this case, the image sensor 104 can be moved by robot 105, thereby acquiring images of the upper surface of the substrate support 16 and the part 200 separately. The image acquired by image sensor 104 is input to measurement unit 106.

[0052] The following, except for reference Figures 1-3 In addition, also refer to Figure 4 . Figure 4 This is a diagram showing multiple distances determined in an assembly system according to an exemplary embodiment. The measuring unit 106 is configured to obtain at least four distances by determining the distances between at least two measuring points within the part 200 and at least two reference points on the upper surface of the substrate support 16 based on images acquired by the image sensor 104. The measuring unit 106 may be configured as a computing device such as a computer. The measuring unit 106 may be configured as a single computing device together with the control unit 108. Alternatively, the measuring unit 106 may be separate from the control unit 108 and configured as a separate computing device. Furthermore, the measuring unit 106 may be configured as a dedicated circuit.

[0053] Regarding at least two reference points within the upper surface of the substrate support portion 16, the measuring unit 106 can determine them based on an image of the upper surface of the substrate support portion 16 acquired by the image sensor 104. Several of the at least two reference points within the upper surface of the substrate support portion 16 may be points within markings on the upper surface of the substrate support portion 16 (e.g., center points). The markings within the upper surface of the substrate support portion 16 are not limited, and may be, for example, patterns capable of image recognition, such as screw holes constituting the upper surface of the substrate support portion 16.

[0054] exist Figure 4In the example shown, at least two reference points include reference points 161 to 163 (reference points 1 to 3). Reference points 161 and 162 can be determined in the measuring unit 106 by image recognition of marks within the upper surface of the substrate support portion 16. Reference points 161 and 162 can be positioned on a circle centered on the intersection of the center point of the upper surface of the substrate support portion 16 (i.e., the axis AX, which serves as the central axis of the substrate support portion 16) and the upper surface of the substrate support portion 16. In this case, in the measuring unit 106, reference point 163 can be determined as the center point of the circle determined based on reference points 161 and 162. Alternatively, all reference points 161 to 163 can be determined by image recognition of marks within the upper surface of the substrate support portion 16.

[0055] At least two measurement points within part 200 can also be determined in measurement unit 106 based on an image of part 200 acquired by image sensor 104. Each of the at least two measurement points within part 200 can be a point within a mark on part 200 (e.g., a center point). Additionally, in Figure 4 In the example shown, at least two measurement points include measurement points 201 and 202.

[0056] The measuring unit 106 calculates at least two distances from each of at least two measuring points to each of at least two reference points within the upper surface of the substrate support portion 16. Thus, the measuring unit 106 obtains the aforementioned at least four distances.

[0057] In one embodiment, the measuring unit 106 can calculate the distance L1 (first distance) between the measuring point 201 (first measuring point) and the reference point 161 (first reference point). The measuring unit 106 can further calculate the distance L2 (second distance) between the measuring point 202 (second measuring point) and the reference point 162 (second reference point). The measuring unit 106 can further calculate the distance L3 (third distance) between the measuring point 201 (first measuring point) and the reference point 163 (third reference point). Furthermore, the measuring unit 106 can further calculate the distance L4 (fourth distance) between the measuring point 202 (second measuring point) and the reference point 163 (third reference point). Alternatively, the measuring unit 106 can calculate the distance between the measuring point 201 and the reference point 162 as distance L3, or it can calculate the distance between the measuring point 202 and the reference point 161 as distance L4. In this case, it is not necessary to determine the reference point 163. Additionally, reference points 161, 162, 163, measuring point 201, and measuring point 202 can be set such that, when part 200 is moved to a designated position, distances L1 and L2 are equal to each other, and distances L3 and L4 are equal to each other.

[0058] The control unit 108 is configured to control the robot 102 to move the part 200 to a designated location. Furthermore, as described above, the control unit 108 can be configured to control the robot 105 to move the image sensor 104 to acquire images of the upper surface of the substrate support 16 and the part 200. The control unit 108 can be configured as a computing device such as a computer or a dedicated circuit.

[0059] The control unit 108 controls the robot 102 to move the part 200 to a designated location based on the comparison results between the at least four distances (e.g., distances L1 to L4) obtained by the measurement unit 106 and at least four reference distances. The at least four reference distances are the distances compared in the control unit 108 with the at least four distances obtained by the measurement unit 106. The at least four reference distances are the at least four distances at which the part 200 is moved to the designated location, and are preset. The at least four reference distances are associated with the identification information of the part 200 and stored in a corresponding external storage device 110 accessible to the control unit 108.

[0060] The control unit 108 controls the transport position of the part 200 to ensure that the comparison result meets the evaluation criteria. If the comparison result meets the evaluation criteria, the control unit 108 controls the robot 102 to fix the position of the part 200 and secure it within the substrate processing apparatus. In one embodiment, regarding the evaluation criteria, it can be considered satisfied if at least four distances are each consistent with their corresponding reference distances, or if the difference between at least four distances and their corresponding reference distances is within a specified error range.

[0061] In this system 100, at least two reference points located on the upper surface of the substrate support portion 16 of the substrate processing apparatus are used as absolute references to adjust the position of the component 200. Therefore, according to the system 100, the component 200 can be assembled into the substrate processing apparatus with high precision and high reproducibility. Furthermore, the upper surface of the substrate support portion 16 is the surface on which the substrate is placed during substrate processing within the substrate processing apparatus. Therefore, the positioning accuracy of the component 200 relative to the upper surface of the substrate support portion 16 is important from the viewpoint of substrate processing accuracy and reproducibility. According to the system 100, by using at least two reference points on the upper surface of the substrate support portion 16 of the substrate processing apparatus as absolute references to assemble the component 200 into the substrate processing apparatus, the precision of substrate processing can be improved with high reproducibility.

[0062] The following is for reference. Figure 5 A method for assembling components of a substrate processing apparatus according to an exemplary embodiment will be described. Figure 5 This is a flowchart of a method for assembling parts of a substrate processing apparatus according to an exemplary embodiment. Figure 5The assembly method shown (hereinafter referred to as "method MT") includes steps STa to STc.

[0063] In process STa, the robot 102 transports the part 200 to a designated location within the substrate processing apparatus. For details regarding the transport of the part 200 based on the robot 102, please refer to the description of system 100 described above.

[0064] In process STb, images of the upper surface of the substrate support 16 and the component 200 of the substrate processing apparatus are acquired by the image sensor 104. For information on image acquisition based on the image sensor 104, please refer to the description of the system 100 described above.

[0065] In process STc, at least four distances are obtained by determining the distances between at least two measurement points within the part 200 and at least two reference points on the upper surface of the substrate support 16 based on images acquired by the image sensor 104 in the measurement unit 106. For details on obtaining the at least four distances in the measurement unit 106, please refer to the description of the system 100 described above.

[0066] In process STJ, the control unit 108 determines whether the comparison results of at least four distances obtained by the measurement unit 106 with the aforementioned at least four reference distances meet the evaluation criteria. If the comparison results do not meet the evaluation criteria, the process is repeated from process STa, and the robot 102 is controlled by the control unit 108 to move the part 200 to a designated position. The moving position of the part 200 is adjusted until the comparison results meet the evaluation criteria. For details regarding the control of the robot 102 based on the control unit 108, please refer to the description of the system 100 described above.

[0067] The above descriptions have illustrated various exemplary embodiments, but the embodiments are not limited to these exemplary embodiments. Various additions, omissions, substitutions, and modifications can be made. Furthermore, elements from different embodiments can be combined to form other embodiments.

[0068] For example, the number of reference points within the substrate support portion 16 can be any number of two or more. Furthermore, the number of measurement points within the component 200 can be any number of two or more. Also, the multiple reference points provided for each of the multiple components of the substrate processing apparatus can be different from the multiple reference points provided for other components among the multiple components. Therefore, the at least four reference distances provided for each of the multiple components can be different from the at least four reference distances provided for other components among the multiple components. The at least four reference distances for each of the multiple components can be associated with the identification information of that component and stored in the storage device 110.

[0069] Hereinafter, various exemplary embodiments included in the present invention will be described in [E1] to [E9].

[0070] [E1] An assembly system for components of a substrate processing apparatus, comprising: A robot configured to move the parts to a designated location within the substrate processing apparatus; An image sensor configured to acquire images of the upper surface of the substrate support portion of the substrate processing apparatus and the component; The measuring unit is configured to obtain at least four distances by determining the distances between at least two measuring points within the component and at least two reference points within the upper surface of the substrate support based on images acquired by the image sensor; and The control unit is configured to control the robot to move the part to the designated position based on comparison results between the at least four distances obtained by the measuring unit and at least four preset reference distances that are the at least four distances when the part is moved to the designated position.

[0071] [E2] According to the component assembly system of the substrate processing apparatus described in E1, wherein, The substrate support portion includes a first reference point, a second reference point, and a third reference point as the at least two reference points. The measuring unit is configured to acquire the first distance between the first measuring point and the first reference point, the second distance between the second measuring point and the second reference point, the third distance between the first measuring point and the third reference point, and the fourth distance between the second measuring point and the third reference point as the at least four distances.

[0072] [E3] According to the component assembly system of the substrate processing apparatus described in E2, wherein, The first reference point and the second reference point are located on a circle centered on the center point of the upper surface of the substrate support portion, and are marks that can be identified within the image. The measuring unit is configured to determine the center point of the circle determined based on the first reference point and the second reference point as the third reference point.

[0073] [E4] According to the component assembly system of the substrate processing apparatus described in E3, wherein... The first reference point, the second reference point, the third reference point, the first measuring point, and the second measuring point are set such that, when the part is moved to the designated position, the first distance and the second distance are equal to each other, and the third distance and the fourth distance are equal to each other.

[0074] [E5] According to the component assembly system of the substrate processing apparatus described in E1, wherein, The substrate support portion includes a first reference point and a second reference point as the at least two reference points. The measuring unit is configured to acquire the distance between the first measuring point and the first reference point, the distance between the first measuring point and the second reference point, the distance between the second measuring point and the first reference point, and the distance between the second measuring point and the second reference point as the at least four distances.

[0075] [E6] An assembly system for components of a substrate processing apparatus according to any one of E1 to E5, wherein... The substrate support includes an electrostatic chuck. The upper surface of the substrate support portion is the upper surface of the electrostatic chuck.

[0076] [E7] According to the component assembly system of the substrate processing apparatus described in E6, wherein, The substrate processing apparatus is a plasma processing apparatus having a chamber in which the substrate support portion is disposed.

[0077] [E8] The assembly system for the components of the substrate processing apparatus according to any one of E1 to E7 further comprises another robot configured to move the image sensor. The control unit is configured to control the other robot to move the image sensor to acquire images of the upper surface of the substrate support and the component.

[0078] [E9] A method for assembling components of a substrate processing apparatus includes the following steps: (a) The component is moved to a designated location within the substrate processing apparatus by a robot; (b) Acquire images of the upper surface of the substrate support portion of the substrate processing apparatus and the component using an image sensor; and (c) In the measuring unit, at least four distances are obtained by determining the distances between at least two measuring points within the part and at least two reference points within the upper surface of the substrate support based on the images acquired by the image sensor. The robot is controlled by the control unit to move the part to the designated position in (a) based on the comparison results of the at least four distances obtained by the measuring unit with the at least four preset reference distances that are the at least four distances when the part is moved to the designated position.

[0079] As can be understood from the above description, various embodiments of the present invention have been described in this specification for illustrative purposes, and various modifications can be made without departing from the scope and spirit of the invention. Therefore, the various embodiments disclosed in this specification are not intended to be limiting, and the true scope and spirit are indicated by the appended claims.

[0080] Symbol Explanation 1-Plasma processing device, 10-Cavity, 16-Substrate support, 22-Electrostatic chuck, 100-System, 102-Robot, 104-Image sensor, 106-Measurement unit, 108-Control unit.

Claims

1. An assembly system of a component of a substrate processing apparatus, comprising: a robot configured to carry the component to a specified position in the substrate processing apparatus; an image sensor configured to acquire an image of an upper surface of a substrate support portion of the substrate processing apparatus and the component; a measurement portion configured to acquire at least four distances by calculating a distance between each of at least two measurement points in the component and each of at least two reference points on the upper surface of the substrate support portion from the image acquired by the image sensor; and a control portion configured to control the robot to carry the component to the specified position based on a comparison result of each of the at least four distances acquired by the measurement portion and at least four reference distances each of which is set as the at least four distances when the component is carried to the specified position.

2. The assembly system of a component of a substrate processing apparatus according to claim 1, wherein the substrate support portion includes a first reference point, a second reference point, and a third reference point as the at least two reference points, and the measurement portion is configured to acquire a first distance between a first measurement point of the at least two measurement points and the first reference point, a second distance between a second measurement point of the at least two measurement points and the second reference point, a third distance between the first measurement point and the third reference point, and a fourth distance between the second measurement point and the third reference point as the at least four distances.

3. The assembly system of a component of a substrate processing apparatus according to claim 2, wherein the first reference point and the second reference point are located on a circle having a center point of the upper surface of the substrate support portion as a center, and are marks recognizable in the image, and the measurement portion is configured to determine a center point of the circle determined based on the first reference point and the second reference point as the third reference point.

4. The assembly system of a component of a substrate processing apparatus according to claim 3, wherein the first reference point, the second reference point, the third reference point, the first measurement point, and the second measurement point are set such that the first distance and the second distance are equal to each other and the third distance and the fourth distance are equal to each other when the component is carried to the specified position.

5. The assembly system of a component of a substrate processing apparatus according to claim 1, wherein the substrate support portion includes a first reference point and a second reference point as the at least two reference points, and the measurement portion is configured to acquire a distance between a first measurement point of the at least two measurement points and the first reference point, a distance between the first measurement point and the second reference point, a distance between a second measurement point of the at least two measurement points and the first reference point, and a distance between the second measurement point and the second reference point as the at least four distances.

6. The assembly system of a component of a substrate processing apparatus according to any one of claims 1 to 5, wherein the substrate support portion includes an electrostatic chuck, and the upper surface of the substrate support portion is an upper surface of the electrostatic chuck. ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ ​ 7. The assembly system of parts of a substrate processing apparatus according to claim 6, wherein the substrate processing apparatus is a plasma processing apparatus having a chamber in which the substrate support section is disposed.

8. The assembly system of parts of a substrate processing apparatus according to any one of claims 1 to 5, further comprising another robot configured to move the image sensor, the control section is configured to control the other robot to move the image sensor to acquire the image of the upper surface of the substrate support section and the part.

9. A method of assembling parts of a substrate processing apparatus, comprising the steps of: (a) transporting the part to a designated position in the substrate processing apparatus by a robot; (b) acquiring an image of an upper surface of a substrate support section of the substrate processing apparatus and an image of the part by an image sensor; and (c) acquiring at least four distances in a measurement section by calculating a distance between each of at least two measurement points in the part and each of at least two reference points on the upper surface of the substrate support section from the image acquired by the image sensor, controlling the robot by a control section to transport the part to the designated position in the (a) according to a comparison result of the at least four distances acquired by the measurement section and each of at least four reference distances which are set in advance as the at least four distances when the part is transported to the designated position.

Images