An immersion lithography pattern water immersion type defect improvement method

By forming and removing the sacrificial photoresist layer during the photolithography process, the problem of immersion lithography pattern defects is solved, the process yield and photolithography etching stability are improved, and the precision of the lithography pattern is achieved.

CN121785058BActive Publication Date: 2026-07-21NEXCHIP SEMICON CO LTD
View PDF 1 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
NEXCHIP SEMICON CO LTD
Filing Date
2026-03-09
Publication Date
2026-07-21

AI Technical Summary

Technical Problem

Immersion lithography technology suffers from lithographic pattern defects. Existing methods, such as reducing scanning speed and using overlay material layers, have limited effectiveness in improving these defects and may lead to reduced production capacity or delamination issues.

Method used

During the photolithography process, a target photoresist layer and a sacrificial photoresist layer are formed. The sacrificial photoresist layer is removed after immersion exposure. The hydrophobicity and thickness control of the sacrificial photoresist layer are used to prevent defects from forming in the target photoresist layer. Multiple baking and drying steps are used to optimize the exposure process.

Benefits of technology

It effectively reduces defects in immersion lithography, improves process yield and the stability of lithography and etching linewidth, and prevents defects from affecting the accuracy of the developed pattern.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN121785058B_ABST
    Figure CN121785058B_ABST
Patent Text Reader

Abstract

The application discloses an immersion lithography pattern water immersion type defect improvement method, comprising the following steps: sequentially forming a target photoresist layer and a sacrificial photoresist layer on a substrate; performing immersion exposure processing on the target photoresist layer and the sacrificial photoresist layer; removing the sacrificial photoresist layer; and performing developing processing on the remaining target photoresist layer. The immersion lithography pattern water immersion type defect improvement method provided by the embodiment of the application forms a sacrificial photoresist layer on the surface of the target photoresist layer, and the immersion type defect is formed in the sacrificial photoresist layer, so that the immersion type defect is avoided to be formed in the target photoresist layer, the process yield is improved, and meanwhile, the reduction of the immersion water defect is favorable for improving the lithography and etching line width stability.
Need to check novelty before this filing date? Find Prior Art