Semiconductor laser module

Abstract

This semiconductor laser module is provided with: a first semiconductor laser element that is hermetically sealed and a second semiconductor laser element that is hermetically sealed; a package including a plate-shaped bottom and a frame having a first opening in the center; and a cover member, the frame body is made of ceramic, the first semiconductor laser element and the second semiconductor laser element are arranged in the first opening part, the cover member covers the upper part of the first opening part, and the first semiconductor laser element and the second semiconductor laser element are hermetically sealed by the package body and the cover member. The first semiconductor laser element and the second semiconductor laser element are electrically connected in series through a metal wire.

Description

[0001] This application is a divisional application of Chinese Patent Application No. 202180033867.5 (International Application No. PCT / JP2021 / 018078), filed on May 12, 2021, entitled "Light Source Module". Technical Field

[0002] This disclosure relates to semiconductor laser modules. Background Technology

[0003] Patent document 1 discloses a light source module having a semiconductor laser element, which combines the laser beam emitted from the semiconductor laser element.

[0004] Figure 49 This is a perspective view showing the configuration of a conventional light source module 1z.

[0005] The conventional light source module 1z includes a semiconductor laser element 11z mounted on top of each of a plurality of bases 50z. Furthermore, each of the plurality of bases 50z is disposed on each of a multi-level substrate 5z, which is arranged in a stepped manner in a multi-level housing 2z.

[0006] A semiconductor laser element 11z, a lens 320z, a lens 350z, and a reflector 370z are fixed on each of the multiple stages of the multi-stage substrate 5z. The laser emitted from each of the multiple semiconductor laser elements 11z is calibrated in the vertical direction by the lens 320z and in the horizontal direction by the lens 350z.

[0007] The laser beam emitted from each of the multiple semiconductor laser elements 11z is combined by mirrors 370z disposed on each stage of the multi-stage substrate 5z, and focused by lens 380z onto the end face of the optical fiber 4z.

[0008] In conventional technology, since the beam width of the laser beam in the longitudinal direction narrows and becomes parallel light, the light emission point 60z of the lens 320z, which is the first collimating optical element, and the semiconductor laser element 11z need to be positioned correctly and close to each other.

[0009] However, it is difficult to completely fix the position of the light-emitting point 60z of the semiconductor laser element 11z at a predetermined position with an error of less than a few micrometers or submicrometers.

[0010] Therefore, the position of optical components such as lenses 320z or 350z is adjusted with high precision relative to the light emission point 60z of semiconductor laser element 11z, and fixed with resin-based adhesives such as UV-curable adhesives.

[0011] Furthermore, in conventional light source modules 1z, multiple semiconductor laser elements 11z are hermetically sealed within the housing 2z. However, in conventional light source modules 1z, optical components such as lenses 320z, 350z, and 380z, as well as reflector 370z, are also sealed. That is, within the housing 2z, multiple semiconductor laser elements 11z are exposed relative to multiple optical components of the focusing optical system.

[0012] Existing technical documents Patent documents Patent Document 1: Japanese Patent Application Publication No. 2013-235943 Summary of the Invention

[0013] The problem that the invention aims to solve In this situation, due to the increased surface area of ​​multiple optical components, dirt and other contaminants on the surfaces of these components easily become foreign objects within the housing 2z. Furthermore, if resin-based adhesives are used to secure the multiple optical components, impurities in the resin can leach into the air within the housing 2z. The aforementioned dirt on the surfaces of the multiple optical components and impurities in the resin can adhere to the semiconductor laser element 11z as foreign objects. When foreign objects adhere to the semiconductor laser element 11z, there is a possibility of performance degradation. Therefore, in conventional technologies, it is difficult to achieve a small and compact light source module that suppresses semiconductor laser element degradation, achieves high laser integration efficiency in the target object, and minimizes its degradation.

[0014] Therefore, the purpose of this disclosure is to provide a light source module that can suppress the degradation of semiconductor laser elements, achieve high laser integration efficiency in an object, and is small and compact.

[0015] Methods for solving problems To achieve the above objectives, one embodiment of the present disclosure includes a light source module comprising: a first semiconductor laser module having a hermetically sealed first semiconductor laser element and a first optical element incident on a first laser beam emitted from the first semiconductor laser element; a second optical element incident on the first laser beam transmitted through the first optical element; and a second semiconductor laser module having a hermetically sealed second semiconductor laser element and a third optical element incident on a second laser beam emitted from the second semiconductor laser element.And a fourth optical element, incident by the second laser beam passing through the third optical element, the first laser beam passing through the second optical element and the second laser beam passing through the fourth optical element are combined, and on the optical axis from the first semiconductor laser element to the second optical element, i.e., the first optical axis, the travel direction of the first laser beam is set as a first direction, the first laser beam has a second optical axis perpendicular to the first direction, and a third optical axis perpendicular to the first direction and the second optical axis, the optical power of the first optical element on the second optical axis is greater than the optical power on the third optical axis. The first laser beam, reaching the first optical element, has a first divergence angle θfd1 and a second divergence angle θsd1. The first divergence angle θfd1 is the divergence angle along the second optical axis, and the second divergence angle θsd1 is the divergence angle along the third optical axis. The first divergence angle θfd1 and the second divergence angle θsd1 satisfy 90°>θfd1>θsd1>0. The third divergence angle θfd12 of the first laser beam emitted from the first optical element along the second optical axis decreases starting from the first divergence angle θfd1. The component along the second optical axis of the first laser beam emitted from the second optical element is calibrated. On the optical axis from the second semiconductor laser element to the fourth optical element (i.e., the fourth optical axis), the travel direction of the second laser beam is defined as the second direction. The second laser beam has a fifth optical axis perpendicular to the second direction and a sixth optical axis perpendicular to both the second direction and the fifth optical axis. The optical power of the third optical element on the fifth optical axis is greater than its optical power on the sixth optical axis. The second laser beam reaching the third optical element has a fourth divergence angle θfd2 and a... The fifth divergence angle θsd2 is the divergence angle along the fifth optical axis, and the sixth divergence angle θsd2 is the divergence angle along the sixth optical axis. The fourth and fifth divergence angles θfd2 and θsd2 satisfy 90° > θfd2 > θsd2 > 0. The sixth divergence angle θfd22 of the second laser beam emitted from the third optical element along the fifth optical axis decreases starting from the fourth divergence angle θfd2. The component of the second laser beam emitted from the fourth optical element along the fifth optical axis is calibrated.

[0016] Furthermore, one embodiment of the light source module disclosed herein includes: a semiconductor laser module comprising: a hermetically sealed first semiconductor laser element, a hermetically sealed second semiconductor laser element, a first optical element incident on a first laser beam emitted from the first semiconductor laser element, and a third optical element incident on a second laser beam emitted from the second semiconductor laser element; the second optical element being incident on the first laser beam transmitted through the first optical element; And a fourth optical element, incident by the second laser beam passing through the third optical element, the first laser beam passing through the second optical element and the second laser beam passing through the fourth optical element are combined, and on the optical axis from the first semiconductor laser element to the second optical element, i.e., the first optical axis, the travel direction of the first laser beam is set as a first direction, the first laser beam has a second optical axis perpendicular to the first direction, and a third optical axis perpendicular to the first direction and the second optical axis, the optical power of the first optical element on the second optical axis is greater than the optical power on the third optical axis. The first laser beam, reaching the first optical element, has a first divergence angle θfd1 and a second divergence angle θsd1. The first divergence angle θfd1 is the divergence angle along the second optical axis, and the second divergence angle θsd1 is the divergence angle along the third optical axis. The first divergence angle θfd1 and the second divergence angle θsd1 satisfy 90°>θfd1>θsd1>0. The third divergence angle θfd12 of the first laser beam emitted from the first optical element along the second optical axis decreases starting from the first divergence angle θfd1. The component along the second optical axis of the first laser beam emitted from the second optical element is calibrated. On the optical axis from the second semiconductor laser element to the fourth optical element (i.e., the fourth optical axis), the travel direction of the second laser beam is defined as the second direction. The second laser beam has a fifth optical axis perpendicular to the second direction and a sixth optical axis perpendicular to both the second direction and the fifth optical axis. The optical power of the third optical element on the fifth optical axis is greater than its optical power on the sixth optical axis. The second laser beam reaching the third optical element has a fourth divergence angle θfd2 and a... The fifth divergence angle θsd2 is the divergence angle along the fifth optical axis, and the sixth divergence angle θsd2 is the divergence angle along the sixth optical axis. The fourth divergence angle θfd2 and the fifth divergence angle θsd2 satisfy 90°>θfd2>θsd2>0. The sixth divergence angle θfd22 of the second laser beam emitted from the third optical element along the fifth optical axis decreases starting from the fourth divergence angle θfd2. The component of the second laser beam emitted from the fourth optical element along the fifth optical axis is calibrated.

[0017] A semiconductor laser module according to a technical solution of this disclosure includes: a first semiconductor laser element that is hermetically sealed; a package having a plate-shaped bottom and a frame having a first opening in the center; and a cover member, the frame being made of ceramic, the first semiconductor laser element being disposed within the first opening, the cover member covering the top of the first opening, the first semiconductor laser element being hermetically sealed by the package and the cover member, the frame having an anode electrode and a cathode electrode electrically connected to the outside of the semiconductor laser module within the first opening, at least a portion of the frame being made of an insulator, the anode electrode, the cathode electrode, and the bottom being electrically insulated from each other, and the frame having a connection between the anode electrode and the bottom... An anode extraction electrode externally connected to a semiconductor laser module and a cathode extraction electrode externally connected to the semiconductor laser module are disposed on the upper surface of a frame. The frame is composed of a first frame portion and a second frame portion. On the upper surface of the first frame portion, a metal film constituting the anode electrode and the anode extraction electrode, and another metal film constituting the cathode electrode and the cathode extraction electrode are formed. The second frame portion is mounted on the metal film side and the other metal film side of the first frame portion, such that the anode electrode and the cathode electrode are disposed inside the second frame portion, and the anode extraction electrode and the cathode extraction electrode are disposed outside the second frame portion.

[0018] Alternatively, the semiconductor laser module may also have a light-transmitting window through which a first laser beam emitted from the first semiconductor laser element passes and is extracted to the outside of the semiconductor laser module. The first semiconductor laser element is hermetically sealed by the light-transmitting window, the package, and the cover component.

[0019] Alternatively, the anode extraction electrode and the cathode extraction electrode may be positioned opposite the light-transmitting window, separated by the first opening.

[0020] Alternatively, the first semiconductor laser element may be an external resonant laser element.

[0021] According to another technical solution of this disclosure, a semiconductor laser module includes: a first semiconductor laser element and a second semiconductor laser element that are hermetically sealed; a package having a plate-shaped bottom and a frame having a first opening in the center; and a cover member, the frame being made of ceramic, the first semiconductor laser element and the second semiconductor laser element being disposed within the first opening, the cover member covering the top of the first opening, the first semiconductor laser element and the second semiconductor laser element being hermetically sealed by the package and the cover member, and the first semiconductor laser element and the second semiconductor laser element being electrically connected in series via metal wires.

[0022] Alternatively, the frame may have an anode electrode and a cathode electrode that electrically connect the first opening to the outside of the semiconductor laser module. At least a portion of the frame is made of an insulator. The anode electrode, the cathode electrode, and the bottom are electrically insulated from each other. The first semiconductor laser element is electrically connected to the anode electrode by a first metal wire, and the second semiconductor laser element is electrically connected to the cathode electrode by a second metal wire.

[0023] Alternatively, the frame may have an anode extraction electrode that connects the anode electrode to the outside of the semiconductor laser module, and a cathode extraction electrode that connects the cathode electrode to the outside of the semiconductor laser module, with the anode extraction electrode and the cathode extraction electrode disposed on the upper surface of the frame.

[0024] Alternatively, the first semiconductor laser element and the second semiconductor laser element may be external resonant laser elements.

[0025] Alternatively, the semiconductor laser module may have a first optical element into which a first laser beam emitted from the first semiconductor laser element is incident, and the first optical element is hermetically sealed.

[0026] The effects of the invention This disclosure enables the suppression of semiconductor laser element degradation and the realization of a small, compact light source module with high laser integration efficiency in the object. Attached Figure Description

[0027] Figure 1 This is a perspective view showing the configuration of the light source module according to the first embodiment.

[0028] Figure 2 This is a perspective view showing the configuration of the first semiconductor laser module according to the first embodiment.

[0029] Figure 3This is a cross-sectional view showing the configuration of the first semiconductor laser module according to the first embodiment.

[0030] Figure 4A This is a schematic diagram showing the optical system of the first semiconductor laser module according to the first embodiment.

[0031] Figure 4B This is an enlarged view showing the optical system near the first semiconductor laser module according to the first embodiment.

[0032] Figure 4C This is an enlarged view showing the optical system near the second semiconductor laser module according to the first embodiment.

[0033] Figure 5 This is a schematic diagram illustrating the process of manufacturing a first semiconductor laser module according to the first embodiment.

[0034] Figure 6 This is an exploded view showing the constituent components of the first semiconductor laser module according to the first embodiment.

[0035] Figure 7 This is a perspective view used to illustrate the method for adjusting the position of the second and fifth optical elements according to the first embodiment.

[0036] Figure 8A This is a cross-sectional view showing the surrounding area of ​​the first semiconductor laser module according to the first embodiment.

[0037] Figure 8B This is a cross-sectional view showing the surrounding area of ​​the first semiconductor laser module involved in another first example of the first embodiment.

[0038] Figure 8C This is a cross-sectional view showing the surrounding area of ​​the first semiconductor laser module involved in another second example of the first embodiment.

[0039] Figure 9A This is a cross-sectional view showing the surroundings of the first semiconductor laser module involved in the first comparative example.

[0040] Figure 9B This is a cross-sectional view showing the surroundings of the first semiconductor laser module involved in the second comparative example.

[0041] Figure 10A This is a schematic diagram showing the surroundings of the optical fiber involved in the first embodiment.

[0042] Figure 10B This is a schematic diagram showing the surroundings of the optical fiber involved in the first comparative example.

[0043] Figure 11This is a perspective view showing the configuration of the light source module according to the second embodiment.

[0044] Figure 12A This is a schematic diagram showing the optical system of the first semiconductor laser module according to the second embodiment.

[0045] Figure 12B This is a schematic diagram used to illustrate the convergence angle involved in the second embodiment.

[0046] Figure 13 This is an exploded perspective view used to illustrate the configuration of the first semiconductor laser module in the light source module according to the second embodiment.

[0047] Figure 14 This is a perspective view used to illustrate the method for adjusting the position of the second optical element and the fifth optical element according to the second embodiment.

[0048] Figure 15 The incident light distribution of the laser emitted from the 7th optical element according to the first and second embodiments and before reaching the 12th optical element is shown.

[0049] Figure 16 A cross-sectional view is shown showing the configuration of the first semiconductor laser module in the light source module according to the first variation of the second embodiment.

[0050] Figure 17 This is a schematic diagram showing the configuration and manufacturing method of the first semiconductor laser module according to the first variation of the second embodiment.

[0051] Figure 18 This is a cross-sectional view showing the configuration of the first semiconductor laser module in the light source module according to the second variation of the second embodiment.

[0052] Figure 19 This is a schematic diagram illustrating a method for manufacturing a first semiconductor laser module according to a second variation of the second embodiment.

[0053] Figure 20 This is a schematic diagram showing the optical system of the first semiconductor laser module included in the light source module of the third variation of the second embodiment.

[0054] Figure 21A This is a schematic diagram illustrating an example of a method for manufacturing a first semiconductor laser module according to a third variation of the second embodiment.

[0055] Figure 21B This is a schematic diagram illustrating another example of a method for manufacturing a first semiconductor laser module according to a third variation of the second embodiment.

[0056] Figure 22 This is a schematic diagram showing the optical system of the first semiconductor laser module included in the light source module according to the fourth variation of the second embodiment.

[0057] Figure 23 This is a cross-sectional view showing the optical system of the first semiconductor laser module included in the light source module of the fifth variation of the second embodiment.

[0058] Figure 24 This is a schematic diagram showing the optical system of the first semiconductor laser module included in the light source module of the sixth variation of the second embodiment.

[0059] Figure 25 This is a schematic diagram showing the optical system of the first semiconductor laser module included in the light source module of the seventh variation of the second embodiment.

[0060] Figure 26 This is a schematic diagram showing the optical system of the first semiconductor laser module included in the light source module of the eighth variation of the second embodiment.

[0061] Figure 27 This is a schematic diagram showing the optical system of the first semiconductor laser module included in the light source module according to the 9th variation of the second embodiment.

[0062] Figure 28 This is a schematic diagram showing the optical system of the first semiconductor laser module included in the light source module according to the 10th variation of the second embodiment.

[0063] Figure 29 This is a perspective view showing the optical system of the light source module according to the third embodiment.

[0064] Figure 30 It is shown Figure 29 A cross-sectional view of the optical system of the light source module according to the third embodiment on the XXX-XXX line.

[0065] Figure 31 This is a perspective view showing the configuration of a semiconductor laser module in the light source module according to the third embodiment.

[0066] Figure 32A This is a perspective view showing the configuration of a semiconductor laser module in the light source module according to the first variation of the third embodiment.

[0067] Figure 32B This is a cross-sectional view showing the configuration of the periphery of a semiconductor laser element in a semiconductor laser module according to the first variation of the third embodiment.

[0068] Figure 33 The configuration of a semiconductor laser module in the light source module according to the second variation of the third embodiment is shown.

[0069] Figure 34 This is a perspective view showing the configuration of the light source module according to the fourth embodiment.

[0070] Figure 35A This is a perspective view showing an example of the optical system of the light source module according to the fourth embodiment.

[0071] Figure 35B This is a perspective view showing the configuration surrounding the first semiconductor laser module according to the fourth embodiment.

[0072] Figure 36 This is a schematic diagram showing the optical system of the light source module according to the fourth embodiment.

[0073] Figure 37A This is a perspective view showing the configuration of the first semiconductor laser module according to the fourth embodiment.

[0074] Figure 37B This is a perspective view showing how the semiconductor laser module unit according to the fourth embodiment is fixed.

[0075] Figure 37C This is a perspective view used to illustrate the method for adjusting the position of the second and fifth optical elements according to the fourth embodiment.

[0076] Figure 38 This is a perspective view showing the configuration surrounding the first semiconductor laser module according to the first variation of the fourth embodiment.

[0077] Figure 39 This is a schematic diagram showing the optical system of the light source module according to the second variation of the fourth embodiment.

[0078] Figure 40 This is a perspective view showing the configuration surrounding the first semiconductor laser module according to the second variation of the fourth embodiment.

[0079] Figure 41 This is a perspective view showing the configuration of the light source module according to the fifth embodiment.

[0080] Figure 42 This is a perspective view showing the configuration of the light source module according to the first variation of the fifth embodiment.

[0081] Figure 43This is a perspective view showing the configuration of the first semiconductor laser module according to the sixth embodiment.

[0082] Figure 44 This is a schematic diagram illustrating a method for manufacturing the first semiconductor laser module according to the sixth embodiment.

[0083] Figure 45 This is a perspective view showing the configuration of the first semiconductor laser module according to the seventh embodiment.

[0084] Figure 46 This is a perspective view showing the configuration of the first semiconductor laser module according to the eighth embodiment.

[0085] Figure 47 This is a schematic diagram showing the optical system of the light source module according to the eighth embodiment.

[0086] Figure 48 This is a perspective view showing the configuration of the first semiconductor laser module 101x according to the ninth embodiment.

[0087] Figure 49 This is a perspective view showing the configuration of a conventional light source module. Detailed Implementation

[0088] The light source module involved in the embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. Furthermore, the embodiments described below are all specific examples of this disclosure. Therefore, the values, shapes, materials, constituent elements, configurations of constituent elements, connection methods, steps, and order of steps shown in the following embodiments are all examples and are not intended to limit this disclosure.

[0089] Furthermore, these figures are schematic diagrams, not rigorous illustrations. Therefore, elements such as the scale of each figure do not necessarily need to be consistent. Also, substantially identical components are given the same symbols across all figures, and repetitive descriptions are omitted or simplified.

[0090] Furthermore, in this specification, the descriptions of relationships between equivalent elements, the descriptions of shapes such as plate shapes or curved surfaces, and the numerical ranges are not merely rigorous representations, but also include substantially equivalent ranges, such as those including a difference of approximately a few percent.

[0091] Furthermore, the terms "above" and "below" in this specification do not refer to the absolute spatial direction (vertical above) and downward direction (vertical below), but rather to the relative positional relationship defined by the stacking order in a layered composition. Moreover, the terms "above" and "below" apply not only to situations where two constituent elements are arranged with gaps between them and other constituent elements exist between them, but also to situations where two constituent elements are arranged in close contact.

[0092] Furthermore, in this specification and accompanying drawings, the first laser beam emitted from the first semiconductor laser element and reaching the object is described below. The optical axis from the first semiconductor laser element to the first optical element, the second optical element, the fifth optical element, and the seventh optical element is defined as the first optical axis. The direction in which the first laser beam travels along the first optical axis is defined as the first direction. The fast axis of the first laser beam is defined as the second optical axis, and the slow axis of the first laser beam is defined as the third optical axis. The first direction is perpendicular to the second optical axis, and the third optical axis is perpendicular to both the first direction and the second optical axis.

[0093] Furthermore, regarding the second laser beam emitted from the second semiconductor laser element and reaching the object, it is as follows: The optical axis from the second semiconductor laser element to the third, fourth, sixth, and seventh optical elements is designated as the fourth optical axis; the direction of travel of the second laser beam on the fourth optical axis is designated as the second direction; the fast axis of the second laser beam is designated as the fifth optical axis; and the slow axis of the second laser beam is designated as the sixth optical axis. Furthermore, the second direction is perpendicular to the fifth optical axis, and the sixth optical axis is perpendicular to both the second direction and the fifth optical axis.

[0094] Furthermore, the x-axis, y-axis, and z-axis represent three axes of a three-dimensional orthogonal coordinate system about the first semiconductor laser element, and the x-direction, y-direction, and z-direction represent the positive directions along the aforementioned x-axis, y-axis, and z-axis.

[0095] Furthermore, the ξ-axis, η-axis, and ζ-axis represent three axes of the three-dimensional orthogonal coordinate system about the first semiconductor laser module, and the ξ-direction, η-direction, and ζ-direction represent the positive directions along the aforementioned ξ-axis, η-axis, and ζ-axis.

[0096] In various embodiments and variations, the direction of travel along the optical axis of the first laser beam just emitted from the first semiconductor laser element is defined as the z-direction, the direction parallel to the second optical axis of the first laser beam just emitted from the first semiconductor laser element is defined as the x-direction, and the direction parallel to the third optical axis is defined as the y-direction.

[0097] Furthermore, the following conditions are specified: the direction of travel along the optical axis of the first laser beam emitted from the first semiconductor laser module is defined as the ζ direction; the direction parallel to the second optical axis of the first laser beam emitted from the first semiconductor laser module is defined as the ξ direction; and the direction parallel to the third optical axis is defined as the η direction. (Additionally, if the ξ, η, and ζ directions are not specified, they are aligned with the x, y, and z directions, respectively.) Therefore, regarding directions 1 to 6, as the laser travels through optical elements or is reflected, causing the direction of travel, fast axis, and slow axis to deflect, the correspondence between directions 1 to 6 and the directions in space (x-direction, etc. and ξ-direction, etc.) changes.

[0098] In the embodiments described below, there are cases where the x and ξ directions are described as "upper" and the opposite directions are described as "lower". Furthermore, there are cases where the upper side is described as the upper surface and the lower side as the lower surface. In this specification, "top view" refers to the view of the light source module from the x and ξ directions, and this view is referred to as a plan view.

[0099] (First Embodiment) [constitute] First, using Figure 1 , Figure 2 , Figure 3 as well as Figure 6 The configuration of the light source module according to the first embodiment will be described.

[0100] Figure 1 This is a perspective view showing the configuration of the light source module 1 according to the first embodiment. More specifically, Figure 1 (a) is a perspective view showing the overall configuration of the light source module 1. Figure 1 (b) is an enlarged perspective view of multiple semiconductor laser modules 100. Figure 2 This is a perspective view showing the configuration of the first semiconductor laser module 101. Figure 3 This is a cross-sectional view showing the configuration of the first semiconductor laser module 101. Figure 6 This is an exploded view showing the constituent components of the first semiconductor laser module 101. Figure 1 For ease of explanation, a portion of the sidewall 3 and a portion of the first package 21 are not shown in the illustration.

[0101] In addition, the first laser beam and the second laser beam will be described in the following way in this specification and the accompanying drawings.

[0102] Specifically, the first laser beam is described as follows: the laser beam emitted from the first semiconductor laser element and reaching the first optical element is denoted as the first laser beam L11; the laser beam reaching the light transmission window is denoted as the first laser beam L12; the laser beam reaching the second optical element is denoted as the first laser beam L13; the laser beam reaching the fifth optical element is denoted as the first laser beam L14; the laser beam reaching the seventh optical element is denoted as the first laser beam L15; the laser beam reaching the twelfth optical element is denoted as the first laser beam L16; and the laser beam emitted from the seventh optical element and passing through the twelfth optical element is denoted as the first laser beam L17.

[0103] Regarding the second laser beam, specifically, it is described as follows: the laser beam emitted from the second semiconductor laser element and reaching the third optical element is designated as the second laser beam L21; the laser beam reaching the light transmission window is designated as the second laser beam L22; the laser beam reaching the fourth optical element is designated as the second laser beam L23; the laser beam reaching the sixth optical element is designated as the second laser beam L24; the laser beam reaching the seventh optical element is designated as the second laser beam L25; the laser beam reaching the twelfth optical element is designated as the second laser beam L26; and the laser beam emitted from the seventh optical element and passing through the twelfth optical element is designated as the second laser beam L27.

[0104] In addition, the first laser beam is sometimes referred to as optical axis A1, first direction D1, second optical axis F1, and third optical axis S1, and the second laser beam is sometimes referred to as optical axis A2, second direction D2, fifth optical axis F2, and sixth optical axis S2.

[0105] like Figure 1 As shown, the light source module 1 includes: a housing 2, a seventh optical element 370 composed of multiple fast-axis collimating lenses (FAC lenses), multiple slow-axis collimating lenses (SAC lenses), and multiple mirrors, a twelfth optical element 380 serving as a condenser lens, an optical fiber 4, and multiple semiconductor laser modules 100. Furthermore, in this embodiment, the FAC lenses are the second optical element 320 and the fourth optical element 340, and the SAC lenses are the fifth optical element 350 and the sixth optical element 360.

[0106] The light source module 1 is a module that enables the lasers emitted from each of the multiple semiconductor laser modules 100 to be combined in space and emitted through an optical system.

[0107] The outer casing 2 has a base 6, a sidewall 3, and a cover (not shown).

[0108] The sidewall 3 is arranged perpendicularly to the base 6 of the housing 2. Furthermore, the sidewall 3 is configured to surround multiple semiconductor laser modules 100, etc. Multiple terminals (not shown) are formed on the sidewall 3 for electrical connection to the outside and inside of the housing 2. The sidewall 3 is made of, for example, Cu, Cu alloy, Fe-Ni-Co alloy, or Al. The base 6 is made of, for example, Cu, Cu alloy, Al, or a ceramic with high thermal conductivity (e.g., AlN or BeO). The cover is a component that covers the top of the housing 2.

[0109] A multi-level substrate 5 is disposed within the housing 2, and the multiple levels of the multi-level substrate 5 are configured in a stepped shape. Each of the multiple semiconductor laser modules 100 is respectively disposed on each level of the multi-level substrate 5.

[0110] Each of the plurality of semiconductor laser modules 100 is a module that converts the input power and emits laser light. In this embodiment, six semiconductor laser modules 100 are provided. For ease of identification, they may be referred to as semiconductor laser modules 1 to 6. Each of the plurality of semiconductor laser modules 100 is arranged in the direction of the third optical axis S1. Here, as an example of the plurality of semiconductor laser modules 100, the first semiconductor laser module 101 will be described.

[0111] The first semiconductor laser module 101 is composed of at least a first package 21, a cover component 110, a first semiconductor laser element 11, a light-transmitting window 317, and a first optical element 310. The components of the first semiconductor laser module 101 will be described in detail below.

[0112] <First Package> like Figure 1 , Figure 2 , Figure 3 as well as Figure 6 As shown, the first package 21 includes a frame 120, a bottom 130, and a power supply component formed on the frame 120. In the first package 21, the frame 120 is stacked on the bottom 130 and fixed thereon. In the first package 21, the direction from the bottom 130 toward the frame 120 is defined as upward, and the surface of the first package 21 when viewed from above is the top surface.

[0113] The bottom 130 is a plate-shaped component made of an inorganic material with high thermal conductivity. The bottom 130 can be made of metals such as Cu or Cu alloys, or ceramics or polycrystalline materials such as AlN, SiC, or diamond. The frame 120 is mainly located only around the periphery of the bottom 130, and in plan view, it is a frame-shaped component with a central opening 1201 (first opening). The opening 1201 is rectangular in shape in the plan view. The frame 120 is a component primarily made of inorganic insulating materials such as alumina ceramic or AlN ceramic. The upper surface of the portion of the bottom 130 not covered by the frame 120 near the central portion is the semiconductor laser element mounting surface 130a.

[0114] The frame 120 has a power supply component located inside and on the surface of the frame 120. The power supply component consists of an anode extraction electrode 131, a cathode extraction electrode 134, an anode electrode 132, and a cathode electrode 135, which are made of patterned metal wiring.

[0115] like Figure 6 As shown, an opening 170 (second opening) connected to the opening 1201 is formed on one side of the first package 21, and a second bonding preparation film 152, made of a metal multilayer film such as Ni, Pt, or Au, is formed around its periphery. That is, the opening 170 is an opening that spatially connects the opening 1201 to the outside of the first semiconductor laser module 101. Furthermore, a first bonding preparation film 151, made of an inorganic material (such as Ni, Pt, or Au), is formed on the upper surface of the frame 120, surrounding the periphery of the opening 1201.

[0116] The anode extraction electrode 131 is the electrode that connects the anode electrode 132 to the outside of the first semiconductor laser module 101, and the cathode extraction electrode 134 is the electrode that connects the cathode electrode 135 to the outside of the first semiconductor laser module 101. The anode extraction electrode 131 and the cathode extraction electrode 134 are formed on the upper surface of the housing 120 and are opposite to the light-transmitting window 317 (described later) across the opening 1201. That is, the anode extraction electrode 131 and the cathode extraction electrode 134 are positioned opposite to the position of the light-transmitting window 317 on the first package 21, across the opening 1201. The anode extraction electrode 131 and the cathode extraction electrode 134 are formed on the upper surface of the first package 21 (i.e., the upper surface of the housing 120) that is closer to the upper surface of the semiconductor laser element mounting surface 130a.

[0117] The anode electrode 132 and cathode electrode 135 are electrodes electrically connected to the outside of the first semiconductor laser module 101 within the opening 1201. A platform portion for the anode electrode 132 and a platform portion for the cathode electrode 135 are provided within the opening 1201. The two platform portions are located on opposite sides of the rectangular opening 1201, and neither platform portion is located on the side where the opening 170 is located. In other words, inside the opening 1201, the platform portions are respectively arranged in a direction orthogonal to the direction from the opening 170 toward the anode extraction electrode 131, with the anode electrode 132 formed on one platform portion and the cathode electrode 135 formed on the other platform portion. Thus, the anode extraction electrode 131 and the cathode extraction electrode 134 are configured to be electrically connected to the anode electrode 132 and the cathode electrode 135 respectively via metal wiring and through-hole electrodes. Furthermore, the anode electrode 132, the cathode electrode 135, and the bottom 130 are electrically insulated from each other.

[0118] <Cover Components> The cover member 110 is made of an inorganic material such as metal or ceramic, and a bonding preparation film (not shown) such as Au is formed on part or all of its surface. Furthermore, the cover member 110 covers the opening 1201.

[0119] <First Semiconductor Laser Component> The first semiconductor laser element 11 is a laser element on a semiconductor substrate in which a semiconductor laminate and an optical waveguide are formed. The first semiconductor laser element 11 converts externally input power into stimulated emission light, such as laser light, and emits it from one end of the optical waveguide, i.e., the emission point. At this time, the second optical axis F1, which is the fast axis of the laser, is an axis along the stacking direction of the semiconductor laminate of the first semiconductor laser element 11, and the third optical axis S1, which is orthogonal to the fast axis, is an axis parallel to the stacking plane of the semiconductor laminate. The wavelength of the emitted first laser beam can be changed by the semiconductor material used in the first semiconductor laser element 11. For example, by using a nitride-based semiconductor laser element with nitrides such as Al, Ga, and In as the main components, the first semiconductor laser element 11 can emit a first laser beam with a peak wavelength, for example, between 350 nm and 550 nm. Furthermore, for example, by employing a semiconductor laser element 11 with semiconductors primarily composed of Al, Ga, In, As, and P, the first semiconductor laser element 11 can emit a first laser beam with a peak wavelength, for example, between 600 nm and 1600 nm. Additionally, the first semiconductor laser element 11 is not limited to semiconductor laser elements made of the aforementioned semiconductor materials, and the wavelength of the first laser beam emitted from the first semiconductor laser element 11 is also not limited to the aforementioned wavelengths.

[0120] The first semiconductor laser element 11 has an elongated rectangular shape in the waveguide direction of the optical waveguide. Furthermore, the width of the optical waveguide is, for example, 5 μm to 300 μm, and the length is, for example, 500 μm to 5 mm. The first semiconductor laser element 11 is a multimode laser with a first laser beam that is multimode on the slow axis.

[0121] Furthermore, while the first semiconductor laser element 11 is a laser element with Fabry-Pérot mirrors formed at both ends of the optical waveguide, it is not limited to this. For example, the first semiconductor laser element 11 may not have a mirror formed on the light-emitting side of the optical waveguide, and may be a so-called superluminescent diode. Additionally, the first semiconductor laser element 11 may not have a mirror formed on the light-emitting side of the optical waveguide, but instead has a mirror for resonance, which is a different component from the first semiconductor laser element 11, arranged on the side of the emitted light direction, to perform laser oscillation, thus forming a so-called external cavity semiconductor laser element.

[0122] In this embodiment, the first semiconductor laser element 11 is disposed together with the base 50 within the opening 1201.

[0123] <Submount> In this embodiment, the first semiconductor laser element 11 is fixed on a base 50. The base 50 is, for example, a platform shape made of an insulating material such as AlN or SiC (crystalline or ceramic), and a patterned, mutually insulating first metal film 137 and second metal film 138 are disposed on the upper surface of this platform shape. A second bonding member 142 is disposed on the first metal film 137. The first metal film 137 and the second metal film 138 are, for example, made of one or more metal films selected from Ni, Cu, Pt, and Au. The second bonding member 142 is, for example, made of an inorganic material such as a welding material like AuSn or SnAgCu. In this embodiment, although the base 50 is a different component from the first package 21, it can also be formed as an integral part of the first package 21.

[0124] <First Optical Element> The first optical element 310 is an optical component in which the first laser beam emitted from the first semiconductor laser element 11 is incident, and is composed of one or more optical elements. In this embodiment, the first optical element 310 is composed of a single optical component.

[0125] The first optical element 310 is an optical component whose focal power on the second optical axis F1 is greater than that on the third optical axis S1. As an example, the first optical element 310 is a cylindrical lens having both a power axis and a non-power axis. It is configured such that the power axis and the non-power axis are perpendicular, and the power axis is parallel to the second optical axis F1. The first optical element 310 has a convex cylindrical surface along the power axis, i.e., a convex cylindrical surface.

[0126] The first optical element 310 is made of an inorganic transparent material such as glass, and an anti-reflective coating film matching the wavelength of the laser is formed on the incident and exit surfaces of the first laser beam. In this embodiment, as an example, the first optical element 310 is a plano-convex cylindrical lens with a planar incident surface and a convex exit surface. This first optical element 310 can narrow the divergence angle on the second optical axis F1.

[0127] <Light-transmitting window> The light-transmitting window 317 is fixed to the first package 21 and is an optical component through which the first laser beam emitted from the first optical element 310 passes. The light-transmitting window 317 may also be integrally formed with a portion of the first optical element 310. Furthermore, the light-transmitting window 317 may also be composed of a composite component, such as a frame, to which the optical element is fixed. In this embodiment, the light-transmitting window 317 is a rectangular inorganic glass plate, and is an optical component with anti-reflective coating films formed on both the incident and exit surfaces.

[0128] <Semiconductor Laser Module> Next, the configuration of the first semiconductor laser module 101 will be described. Figure 2 This is a perspective view used to illustrate the configuration of the first semiconductor laser module 101, showing the cover member 110 being removed from the top of the first package 21.

[0129] The first semiconductor laser element 11 is disposed on the upper surface of the base 50. At this time, the optical waveguide of the first semiconductor laser element 11 is disposed on one side of the base 50. That is, the first semiconductor laser element 11 is mounted and fixed in a so-called junction-down manner. Figure 2 As shown, the first laser beam L11 is emitted from a light-emitting point (not shown) of the first semiconductor laser element 11 toward the first optical element 310 and the light-transmitting window 317 and proceeds in parallel, and the first laser beam L13 is emitted from the light-transmitting window 317.

[0130] The first laser beam is also the light emitted from the first semiconductor laser module 101. That is, in this embodiment, the direction of travel of the light emitted from the first semiconductor laser module 101 is the same as the direction of the first laser beam L11 just emitted from the first semiconductor laser element 11. Therefore, the second optical axis F1 is parallel to the stacking direction of the bottom 130 of the first package 21 and the frame 120. The third optical axis S1 is parallel to the semiconductor laser element mounting surface 130a of the bottom 130.

[0131] like Figure 3 As shown, a first metal film 137 and a second bonding member 142 are sequentially disposed between the base 50 and the first semiconductor laser element 11. At this time, the first metal film 137 of the base 50 is exposed on the base 50, extending from between the base 50 and the first semiconductor laser element 11 in a direction toward the anode electrode 132. A second metal film 138 is disposed on the side of the cathode electrode 135 of the first semiconductor laser element 11.

[0132] The base 50 is disposed above the bottom 130 and fixed via the fifth joining member 145. The fifth joining member 145 is made of, for example, an inorganic material with a thickness of more than 1 μm and less than 50 μm (as an example, a welding material such as AuSn or a metal such as Au).

[0133] The first optical element 310 is a plano-convex cylindrical lens with a convex cylindrical surface, configured such that its optical functional axis is parallel to the second optical axis F1 of the first laser beam, and its non-optical functional axis is parallel to the third optical axis S1. Therefore, the first optical element 310 becomes a lens with optical power only for the fast axis of the incident light, functioning as a FA lens. The FA lens can control the divergence angle of the laser along its fast axis.

[0134] The first optical element 310 is positioned above the first support member 161.

[0135] The first support member 161 is a component for supporting the first optical element 310 and is made of a glass block or the like. More specifically, the first support member 161 is disposed on the side of the base 50 in the z-direction via a metal film 50F and a third bonding member 143. The third bonding member 143 is made of, for example, an inorganic material (such as SnSb, for example).

[0136] The light-transmitting window 317 is fixed to the first package 21 by a bonding member (hereinafter referred to as the fourth bonding member 144) made of inorganic material. More specifically, the light-transmitting window 317 is fixed to the side of the frame 120 in the z-direction direction via the fourth bonding member 144 and the second bonding preparation film 152. In other words, the light-transmitting window 317 constitutes a window portion of the first package 21. The light-transmitting window 317 is a window portion that provides an airtight seal to the first package 21 and is a window through which the first laser beam passes, and the first laser beam emitted from the first semiconductor laser element 11 is extracted to the outside of the first semiconductor laser module 101. The light-transmitting window 317 is provided on the outside of the frame 120 in a manner that covers the opening 170. Furthermore, the fourth bonding member 144 is made of, for example, an inorganic material (such as a welding material like AuSn). Furthermore, the second bonding preparation film 152 is made of, for example, an inorganic material (such as metals like Ni, Pt, or Au).

[0137] The cover member 110 covers the opening 1201 via the first bonding member 141 and the first bonding preparation film 151, and is connected to the upper surface (the surface in the ξ direction) of the frame 120. The first bonding member 141 is made of an inorganic material such as a welding material like SnAu, SnAgCu, or In. At this time, the cover member 110 covers the anode extraction electrode 131 and the cathode extraction electrode 134 formed on the upper surface of the frame 120.

[0138] The first semiconductor laser module 101 further includes metal wires 190, 191 and 192, and the first semiconductor laser element 11 is electrically connected to the power supply component of the housing 120.

[0139] Specifically, the metal wire 190 connects the surface of the first semiconductor laser element 11 on the semiconductor substrate side to the second metal film 138 of the base 50. The surface of the first semiconductor laser element 11 on the optical waveguide side is electrically connected to the first metal film 137 through the second bonding member 142.

[0140] Metal wire 191 electrically connects the first metal film 137 of the base 50 to the anode electrode 132 of the first package 21. Therefore, the anode electrode 132 is electrically connected to the first semiconductor laser element 11 via metal wire 191, the first metal film 137, and the second bonding member 142.

[0141] Metal wire 192 electrically connects the second metal film 138 of the base 50 to the cathode electrode 135 of the first package 21. Therefore, the cathode electrode 135 is electrically connected to the first semiconductor laser element 11 via metal wire 192, the second metal film 138, and metal wire 190.

[0142] With the above configuration, the first semiconductor laser element 11 can be connected to the outside of the first package 21 through a power supply component consisting of an anode extraction electrode 131 and a cathode extraction electrode 134.

[0143] With the above configuration, in the first semiconductor laser module 101 of this embodiment, as shown... Figure 3 As shown, the first optical element 310 and the first semiconductor laser element 11 are hermetically sealed within a structure consisting of a first package 21, a cover component 110, and a light-transmitting window 317.

[0144] Accordingly, the first semiconductor laser element 11 can receive power from outside the first package 21 while avoiding the influence of impurities such as organic matter from the outside of the first package 21. Therefore, during operation of the first semiconductor laser element 11, the deterioration of the first semiconductor laser element 11 caused by impurities such as organic matter adhering to the light-emitting point of the first semiconductor laser element 11 can be suppressed.

[0145] Furthermore, within the first package 21, each component is fixed by a bonding member made of an inorganic material such as metal. Therefore, impurities such as organic matter are less likely to precipitate onto the periphery of the first semiconductor laser element 11. Accordingly, degradation of the first semiconductor laser element 11 caused by the adhesion of impurities such as organic matter can be suppressed.

[0146] Furthermore, with the above-described configuration, in this embodiment, a light-transmitting window 317 is provided on the side of the frame 120 in the first direction D1, and a first optical element 310 and a first semiconductor laser element 11 are disposed facing the light-transmitting window 317. With this configuration, the first laser beam emitted from the first semiconductor laser element 11 can be output to the outside. Moreover, the first laser beam emitted from the first semiconductor laser element 11 is emitted at a predetermined height, and through the first optical element 310, which serves as a FA lens, the divergence angle of the first laser beam on the second optical axis F1 (fast axis) is reduced, thus enabling the emission of the first laser beam.

[0147] In the above configuration, the anode electrode 132 and the cathode electrode 135 are elongated in the emission direction of the first laser beam, i.e., the first direction D1, allowing them to be arranged adjacent to the base 50 in a position orthogonal to the first direction D1. With this configuration, as... Figure 2 As shown, multiple metal wires 190, 191, and 192 can be easily formed. Therefore, more power can be supplied to the first semiconductor laser element 11 from outside the first package 21. Therefore, the first semiconductor laser module 101 can emit a larger laser output.

[0148] In the above configuration, the first package 21 can be a rectangular shape that extends along the emission direction of the first laser beam, i.e., the first direction D1. Therefore, the anode extraction electrode 131 and the cathode extraction electrode 134 can be positioned on the opposite side of the first package 21, sandwiching the opening 1201, from the position where the light-transmitting window 317 is located. With this configuration, the light-transmitting window 317 and the first optical element 310 can be positioned near the emission portion of the first laser beam of the first semiconductor laser module 101. Therefore, the first semiconductor laser module 101 can be easily constructed, and its optical design can be more freely implemented.

[0149] Furthermore, the second to sixth semiconductor laser modules among the plurality of semiconductor laser modules 100 have the same configuration as the first semiconductor laser module 101, and therefore can achieve the same effect.

[0150] For example, in the second semiconductor laser module 102, the second semiconductor laser element 12 is fixed within the opening of the second package 22 via the base 50. The second semiconductor laser element 12 is hermetically sealed by the second package 22, the light-transmitting window 337, and the cover member 110. A third optical element 330 is also fixed inside the second package 22. Therefore, when the second laser beam emitted from the second semiconductor laser element 12 is incident on the third optical element 330, it can become a second laser beam with a reduced divergence angle on the second optical axis F1 (fast axis), and exit to the outside through the light-transmitting window 337.

[0151] Furthermore, the second package 22 includes a frame 120, a bottom 130, and a power supply component formed in the frame 120. The power supply component is a wiring that electrically connects the interior and exterior of the second package 22. An anode extraction electrode 1312 and a cathode extraction electrode 1342 are formed on the upper surface of the second package 22 (i.e., the upper surface of the frame 120). The anode extraction electrode 1312 and the cathode extraction electrode 1342 are formed on the side of the second package 22 opposite to the mounting position of the light-transmitting window 317 relative to the semiconductor laser element mounting position.

[0152] like Figure 1 As shown, in the light source module 1, the cathode extraction electrode 134 of the first semiconductor laser module 101 is electrically connected to the anode extraction electrode 1312 of the adjacent second semiconductor laser module 102 via a metal wire 193. The cathode extraction electrode 1342 of the second semiconductor laser module 102 is electrically connected to the anode extraction electrode 1313 of the adjacent third semiconductor laser module 103 via a metal wire 1931. In this way, adjacent semiconductor laser modules 100 can be easily connected in series within the light source module 1.

[0153] In this embodiment, the first semiconductor laser module 101 and the second semiconductor laser module 102 are arranged on the multi-level substrate 5.

[0154] Therefore, the first laser beam L11 and the second laser beam L21 are emitted from the first semiconductor laser element 11 and the second semiconductor laser element 12 in the same direction. At this time, the first semiconductor laser module 101 and the second semiconductor laser module 102 are rectangular shapes that are longer in the direction of the first laser beam L11 and the direction of the second laser beam L21. Therefore, the first semiconductor laser module and the second semiconductor laser module can be arranged adjacent to each other, thereby enabling miniaturization of the light source module.

[0155] Similarly, since the first to sixth semiconductor laser modules can be compactly arranged within the light source module 1, miniaturization of the light source module 1 is possible. Furthermore, in the first to sixth semiconductor laser modules, an anode extraction electrode and a cathode extraction electrode are formed on the side opposite to the emission direction of the first to sixth laser beams, and these anode and cathode extraction electrodes are formed on the upper surface of the first to sixth packages, above the position where the semiconductor laser element is mounted. Therefore, the first to sixth semiconductor laser modules can be easily connected in series via metal wires or the like. Thus, electrical wiring within the light source module 1 can be easily constructed.

[0156] Then use Figure 1 The optical structure and function of the light source module 1, including multiple FAC lenses, are explained.

[0157] In each of the plurality of semiconductor laser modules 100, an FAC lens and a SAC lens are respectively arranged in the laser emission direction (first direction D1, etc.), and arranged in the order of FAC lens and SAC lens. That is, the number of FAC lenses and SAC lenses arranged in the light source module 1 corresponds to the number of semiconductor laser modules 100.

[0158] An example of an FAC lens is a second optical element 320 disposed in the laser emission direction of the first semiconductor laser module 101, and a fourth optical element 340 disposed in the laser emission direction of the second semiconductor laser module 102. A first laser beam passing through the first optical element 310 is incident on the second optical element 320, and a second laser beam passing through the third optical element 330 is incident on the fourth optical element 340.

[0159] A plano-convex cylindrical lens is a lens with a convex cylindrical surface. As an example of an FAC lens, it is made of glass with an anti-reflective coating formed on its surface. The incident side of the laser is flat, and the exit side is convex, making it a plano-convex cylindrical lens.

[0160] The second optical element 320 has a cylindrical surface with a convex curvature on the optical functional axis, i.e., a convex cylindrical surface. The second optical element 320 also has a non-optical functional axis in a direction orthogonal to the optical functional axis. The fourth optical element 340 has a cylindrical surface with a convex curvature on the optical functional axis, i.e., a convex cylindrical surface. The fourth optical element 340 also has a non-optical functional axis in a direction orthogonal to the optical functional axis.

[0161] The second optical element 320 is configured such that its optical functional axis is parallel to the second optical axis F1 of the first laser, and its non-optical functional axis is parallel to the third optical axis S1. The fourth optical element 340 is similarly configured such that its optical functional axis is parallel to the fifth optical axis F2 of the second laser, and its non-optical functional axis is parallel to the sixth optical axis S2.

[0162] In other words, the second optical element 320 and the fourth optical element 340 are configured as lenses with optical power on the fast axis of the laser. Multiple FAC lenses calibrate the components of the separately incident laser along the fast axis.

[0163] An example of a SAC lens is a fifth optical element 350 positioned in the laser emission direction of the first semiconductor laser module 101, and a sixth optical element 360 positioned in the laser emission direction of the second semiconductor laser module 102. Specifically, in this embodiment, a second optical element 320 is positioned between the first optical element 310 and the fifth optical element 350, and a fourth optical element 340 is positioned between the third optical element 330 and the sixth optical element 360.

[0164] SAC lenses are lenses with a convex cylindrical surface. An example of an SAC lens is a plano-convex cylindrical lens made of glass with an anti-reflective coating formed on its surface.

[0165] The fifth optical element 350 has a cylindrical surface with a convex curvature on the optical functional axis, i.e., a convex cylindrical surface. The fifth optical element 350 also has a non-optical functional axis in a direction orthogonal to the optical functional axis. The sixth optical element 360 has a cylindrical surface with a convex curvature on the optical functional axis, i.e., a convex cylindrical surface. The sixth optical element 360 also has a non-optical functional axis in a direction orthogonal to the optical functional axis.

[0166] The fifth optical element 350 is configured such that its optical functional axis is parallel to the third optical axis S1 of the first laser, and its non-optical functional axis is parallel to the second optical axis F1. Similarly, the sixth optical element 360 is configured such that its optical functional axis is parallel to the sixth optical axis S2 of the second laser, and its non-optical functional axis is parallel to the fifth optical axis F2. In other words, the fifth and sixth optical elements 350 are lenses with optical power along the slow axis of the laser. Multiple SAC lenses calibrate the slow-axis components of the separately incident lasers.

[0167] With the above configuration, the laser emitted from multiple semiconductor laser modules 100 and passing through multiple SAC lenses becomes an outgoing light whose fast and slow axes are both calibrated.

[0168] Furthermore, in the laser emission direction of each of the plurality of semiconductor laser modules 100 (for example, in the first direction D1 of the first semiconductor laser module 101), a seventh optical element 370 is configured as a plurality of reflectors.

[0169] The seventh optical element 370 is an optical component that receives the first laser beam passing through the fifth optical element 350 and the second laser beam passing through the sixth optical element 360. Multiple mirrors of the seventh optical element 370 reflect the laser beams calibrated by the aforementioned multiple FAC lenses and multiple SAC lenses, respectively, and deflect the laser beams by 90°. The laser beams reflected by the seventh optical element 370 are combined in space with their fast axes aligned, and reach the twelfth optical element 380, which is fixed to the substrate 6.

[0170] The 12th optical element 380 is an optical component that receives the first laser beam transmitted through the second optical element 320 and the fifth optical element 350, and the second laser beam transmitted through the fourth optical element 340 and the sixth optical element 360. Furthermore, the 12th optical element 380 also receives the first and second laser beams reflected by the seventh optical element 370. In this embodiment, the 12th optical element 380 is a focusing lens that focuses the arriving first and second laser beams (i.e., the lasers of each of the plurality of semiconductor laser modules 100). Parallel laser beams with their fast axes aligned with the same optical axis are incident on the 12th optical element 380 via the seventh optical element 370. Further, the first and second laser beams focused by the 12th optical element 380 are incident on the end face of the optical fiber 4, which is an example of the target object. With the 12th optical element 380 configured in this way, the first and second laser beams can be efficiently focused onto the end face of the optical fiber 4, which is the target object.

[0171] Optical fiber 4 is configured to penetrate sidewall 3. The laser beams from each of the multiple semiconductor laser modules 100, which are focused by the 7th optical element 370, are converged onto optical fiber 4.

[0172] Furthermore, the multiple FAC lenses, multiple SAC lenses, and multiple seventh optical elements 370 for each of the multiple semiconductor laser modules 100 can all adopt the same shape.

[0173] [The action of the laser] The laser emitted from the plurality of semiconductor laser modules 100 will be further described. As an example, although the first semiconductor laser module 101 will be described here, the other semiconductor laser modules 100 operate in the same manner.

[0174] Figure 4A This is a schematic diagram showing the optical system of the first semiconductor laser module 101. Specifically, Figure 4A (a) is a plan view. Figure 4A (b) is shown Figure 4A A sectional view of the section plane along line bb in (a). Here, in Figure 4A The first package 21 and the cover member 110 are schematically described as the first package 21, and the first semiconductor laser element 11 is hermetically sealed by the first package 21 and the light-transmitting window 317. Furthermore, for the convenience of explaining the first semiconductor laser module 101, it is described with the optical waveguide 61 as the so-called junction facing upward.

[0175] Figure 4B It is shown Figure 4A An enlarged view of the optical system near the first semiconductor laser module 101. Figure 4B (a) is a Figure 4A (a) is an enlarged image. Figure 4B (b) is for Figure 4A (b) is an enlarged image.

[0176] in addition, Figure 4A (b) and Figure 4B Although (b) is a sectional view, no additional shading lines are added to the first optical element 310, the light-transmitting window 317, the fifth optical element 350, and the seventh optical element 370 for the purpose of understanding the operation of the first laser beam. The same omission of shading lines is also found in subsequent figures.

[0177] like Figure 4A As shown, the first laser beam L11 emitted from the emitting point 60 of the optical waveguide 61 of the first semiconductor laser element 11 is light with a predetermined divergence angle. At this time, the intensity of the first laser beam L11 depends on the emission angle, with the strongest intensity near an emission angle of 0 degrees, exhibiting an approximately unimodal distribution. Furthermore... Figure 4A In the first laser beam, the intensity becomes 1 / (e) of the peak value. 2The position of the value is shown by a dashed line, which indicates the divergence of the first laser beam.

[0178] In this embodiment, the divergence angle of the laser is 1 / (e^(-1 / 2)) of the peak intensity. 2 The value of θ is the angle between the ray and the optical axis A1. Here, the divergence angle on the fast axis of the laser is denoted as θfd, and the divergence angle on the slow axis is denoted as θsd.

[0179] In this embodiment, the first laser beam L11 reaching the first optical element 310 has a first divergence angle θfd1 on the second optical axis F1 and a second divergence angle θsd1 on the third optical axis S1. Furthermore, the first laser beams L12 and L13 passing through the first optical element 310 and the light-transmitting window 317 have a third divergence angle θfd12 on the second optical axis F1.

[0180] Furthermore, utilizing Figure 4B The divergence angle will be explained in further detail. Figure 4B (a) is a Figure 4A (a) is a magnified view of the area near the light-emitting point 60 of the first semiconductor laser element 11. Figure 4B (b) is for Figure 4A (b) is a magnified view of the area near the light-emitting point 60 of the first semiconductor laser element 11.

[0181] The operation of the first laser beam is shown first.

[0182] The first divergence angle θfd1 and the second divergence angle θsd1 satisfy 90° > θfd1 > θsd1 > 0. Specifically, the first divergence angle θfd1 is between 18° and 27°, and the second divergence angle θsd1 is between 3° and 10°. Therefore, the divergence angle, i.e., the third divergence angle θfd12, of the first laser beam L12 and L13 transmitted through the first optical element 310 in the direction of the second optical axis F1 decreases from the first divergence angle θfd1. Specifically, the third divergence angle θfd12 is between 9° and 20°.

[0183] The second laser beam has the same effect. Here, using... Figure 4C This illustrates the second laser beam emitted by the second semiconductor laser element in the second semiconductor laser module 102. Figure 4C This is an enlarged view showing the optical system near the second semiconductor laser module 102. More specifically, Figure 4C (a) is equivalent to Figure 4B of (a), Figure 4C (b) is equivalent to Figure 4B (b)

[0184] That is, the fourth divergence angle θfd2 on the fifth optical axis F2 of the second laser beam L21 emitted from the second semiconductor laser element, and the fifth divergence angle θsd2 on the sixth optical axis S2, satisfy 90°>θfd2>θsd2>0. Specifically, the fourth divergence angle θfd2 is between 18° and 27°, and the fifth divergence angle θsd2 is between 3° and 10°. Therefore, the sixth divergence angle θfd22 in the direction of the fifth optical axis F2 of the second laser beams L22 and L23 transmitted through the third optical element 330 decreases from the fourth divergence angle θfd2. Specifically, the sixth divergence angle θfd22 is between 9° and 20°.

[0185] Further explanation of the first laser beam.

[0186] Next, the first laser beam L13, passing through the first optical element 310, is incident on the second optical element 320. Thus, the composition of the second optical axis F1 of the first laser beam L14, passing through the second optical element 320, is calibrated. The composition of the third optical axis S1 of the first laser beam L15, passing through the fifth optical element 350, is calibrated.

[0187] Similarly, the second laser beam L23, passing through the third optical element 330, is incident on the fourth optical element 340. Therefore, the composition of the fifth optical axis F2 of the second laser beam L24, passing through the fourth optical element 340, is calibrated. The composition of the sixth optical axis S2 of the second laser beam, passing through the sixth optical element 360, is calibrated.

[0188] At this time, regarding the intensity distribution of the first laser beam L15 emitted and propagating from the fifth optical element 350, at 1 / (e) of the peak intensity... 2 When the width of the distribution of the value is set as the beam width, the optical design is carried out in such a way that the beam width BFw on the second optical axis F1 is narrower than the beam width BSw on the third optical axis S1.

[0189] Therefore, the first laser beam L17, which is calibrated on both the second optical axis F1 and the third optical axis S1, reaches the 12th optical element 380 and is focused, and then reaches the end face of the optical fiber 4.

[0190] As described above, the first optical element 310 is disposed near the first semiconductor laser element 11 within the first package 21. Therefore, before the beam width of the first laser beam significantly expands along the second optical axis F1, the divergence angle of the first laser beam decreases from the first divergence angle θfd1 to the third divergence angle θfd12. This narrows the beam width of the first laser beam L14 along the second optical axis F1 when incident on the second optical element 320. Consequently, the size of the second optical element 320 can be reduced. Furthermore, since the beam width BFw of the first laser beam L15 transmitted through the fifth optical element 350 along the second optical axis F1 can be narrowed, the laser beams from other semiconductor laser modules 100 can be aligned in the direction of the second optical axis F1. Therefore, the size of the 12th optical element 380 can be reduced. In other words, the size of the optical system of the light source module 1 can be reduced.

[0191] Furthermore, when multiple semiconductor laser modules 100 are arranged within the light source module 1, if the position and orientation of the semiconductor laser element installed in the semiconductor laser module 100 deviates, the position and orientation of the semiconductor laser module 100 installed in the light source module 1 will also deviate. Therefore, the positions and orientations of the lasers emitted from the multiple semiconductor laser modules 100 will vary within the installation accuracy range. For this reason, in order to focus each laser beam to a specified position, the focusing position of each laser needs to be individually adjusted. Since the multiple FAC lenses, such as the second optical element 320, are located outside the first package 21, their positions can be easily adjusted individually. Therefore, the first laser beam L17 can be efficiently focused to a specified position on the end face of the optical fiber 4, which is the target.

[0192] Furthermore, multiple SAC lenses, including the fifth optical element 350, are also located externally on the first package 21. Therefore, the positions of the multiple SAC lenses can be easily adjusted. Accordingly, the first laser beam L17 can be more efficiently focused onto a predetermined position at the end face of the optical fiber 4, which is the target object.

[0193] Furthermore, the second to sixth semiconductor laser modules among the multiple semiconductor laser modules 100 are also configured the same as the first semiconductor laser module 101 and can achieve the same effect.

[0194] [Manufacturing Method of Semiconductor Laser Modules] Further utilization Figure 2 , Figure 5 as well as Figure 6 An example of a method for manufacturing multiple semiconductor laser modules 100 will be described. Although a first semiconductor laser module 101 has been used as an example here, the other semiconductor laser modules 100 are manufactured in the same way.

[0195] Figure 5 as well as Figure 6 This is a schematic diagram of the manufacturing process of the first semiconductor laser module 101. Additionally, in the accompanying drawings showing the manufacturing method below, there are instances where the orientation, etc., is indicated by dashed arrows.

[0196] The first semiconductor laser module 101, as shown Figure 5 as well as Figure 6 As shown, they are manufactured in the following order.

[0197] like Figure 5 As shown, the bottom 130 and the frame 120 are first stacked, and then the bottom 130 and the frame 120 are fixed to manufacture the first package 21. More specifically, the frame 120 is formed by stacking a first frame portion 121, a second frame portion 122, and a third frame portion 123.

[0198] In addition, the first frame portion 121 is a ceramic plate with a rectangular opening 1211 formed on the inside.

[0199] Furthermore, the second frame portion 122 is a ceramic plate with an outwardly opening portion 1221 formed in the direction toward the first direction D1. The opening portion 1221 is configured to have an opening with the same shape as the opening portion 1211, and a notch is formed in the direction toward the first direction D1. In addition, the notch becomes the opening portion 170 of the first package 21. An anode electrode 132 and a cathode electrode 135 are disposed in the second frame portion 122. More specifically, the anode electrode 132, which is formed by forming a patterned metal wiring through film deposition, is disposed at one end of the opening portion 1221 in the n direction, and the cathode electrode 135 is disposed at the other end of the opening portion 1221 in the n direction.

[0200] Furthermore, in the third frame portion 123, through film formation, the anode extraction electrode 131 and cathode extraction electrode 134, constructed with patterned metal wiring, are arranged separately from each other in the η direction. The third frame portion 123 is a ceramic plate with a rectangular opening 1231 formed on its inner side. The width of the opening 1231 in the η direction is larger than the width of the opening 1221 in the η direction, and the width of the opening 1231 in the ζ direction is equal to the width of the opening 1221 in the ζ direction. During lamination, the second frame portion 122 is laminated onto the first frame portion 121 in such a way that the openings 1211 and 1221 can be correctly overlapped. And during lamination, the third frame portion 123 is laminated onto the second frame portion 122 in such a way that the anode electrode 132 and the cathode electrode 135 are exposed within the opening 1231. Furthermore, the bottom 130 and the frame 120 are stacked in such a manner that the sides of the bottom 130, the first frame portion 121, the second frame portion 122, and the third frame portion 123 in their respective first direction D1 are aligned with each other. With this configuration, an opening 1201 consisting of openings 1211, 1221, and 1231 is formed in the frame 120. In the opening 1201, the top surface of the first package 21 extends to the bottom 130, and the surface of the bottom 130 is exposed.

[0201] Furthermore, in the third frame portion 123, through-hole electrodes 133 and 136 are formed in such a way that they extend from the upper surface to the lower surface of the third frame portion 123. Through the through-hole electrodes 133 and 136, the anode extraction electrode 131 and the cathode extraction electrode 134 are electrically connected to the anode electrode 132 and the cathode electrode 135.

[0202] The bottom 130, the first frame portion 121, the second frame portion 122, and the third frame portion 123 are, for example, formed from a ceramic green sheet and then laminated onto the bottom 130, and fixed to the bottom 130 by heating and sintering. Then, an Au film is formed on the bottom 130 and the exposed surfaces of each electrode by chemical plating or the like. Furthermore, a second bonding preparation film 152 is formed around the opening 170 by vacuum plating or the like.

[0203] The first package 21, which has openings 170 and 1201 and a semiconductor laser element mounting surface 130a formed inside, is manufactured by the method described above.

[0204] Next, as Figure 6 As shown, components such as the first semiconductor laser element 11 are mounted on the first package 21.

[0205] First, the first semiconductor laser element 11 is installed above the base 50. At this time, the first semiconductor laser element 11 is placed on the second engagement member 142 of the base 50 and fixed by pressing while heating.

[0206] Next, wiring is performed on the metal wires 190 for electrically connecting the first semiconductor laser element 11 and the second metal film 138 of the base 50.

[0207] Additionally, a light-transmitting window 317 is fixed at the opening 170 of the first package 21. At this time, a second bonding preparation film 152 and a fourth bonding member 144 are formed on the periphery of the light-transmitting window 317, and the light-transmitting window 317 is fixed by pressing the light-transmitting window 317 while heating the first package 21.

[0208] Next, the base 50 on which the first semiconductor laser element 11 is mounted is mounted on the semiconductor laser element mounting surface 130a exposed in the opening 1201 via the fifth engagement member 145.

[0209] Next, the first optical element 310 is fixed at a predetermined height and distance relative to the first semiconductor laser element 11 using the first support member 161. Furthermore, in this embodiment, the optical axis A1 of the light source module 1 is adjusted using the FAC lens and SAC lens disposed outside the first semiconductor laser module 101. Therefore, high-precision position adjustment and fixing techniques such as active calibration of the first optical element 310 are not required in this process. Specifically, the first optical element 310 is fixed to the predetermined position of the first support member 161 using optical contact, laser welding, or solder fixing. At this time, a metal film (not shown) and a third bonding member 143 are formed on the semiconductor laser element side of the first support member 161. Then, while heating the first package 21 on which the base 50 is mounted, the first support member 161 is positioned to be mounted onto the metal film 50F of the base 50, and by cooling, the first support member 161 is fixed to the base 50. With this configuration, it is possible to easily manufacture a first semiconductor laser module 101 in which the first optical element 310 is internally configured.

[0210] Further as Figure 2 As shown, the base 50 and the anode electrode 132 and cathode electrode 135 disposed in the frame 120 are electrically connected by metal wires 191 and 192, respectively.

[0211] Therefore, a cover member 110 is disposed above the first semiconductor laser element 11. A first bonding member 141 is formed on the periphery of the cover member 110, and the first bonding member 141 is formed along a first bonding preparation film 151 formed around the opening 1201 of the first package 21. The first package 21 is heated to a predetermined temperature, the cover member 110 is disposed at a predetermined position, and further, by pressing, the opening 1201 above the first package 21 is covered by the cover member 110. With this configuration and manufacturing method, the first semiconductor laser element 11 is hermetically sealed within the first package 21.

[0212] At this time, as Figure 3 As shown, the first semiconductor laser element 11, the first optical element 310, and the light-transmitting window 317, etc., are all fixed by bonding components made of inorganic materials.

[0213] At this point, the second bonding component 142, the fourth bonding component 144, and the fifth bonding component 145 used in the first half of the manufacturing process employ, for example, AuSn solder with a high melting point between 270°C and 300°C. In the next process, the third bonding component 143 used to fix the first optical element 310 employs, for example, SnSb solder with a lower melting point between 220°C and 250°C, and the first bonding component 141 used to seal the first package 21 with the cover component 110 employs, for example, SnAgCu solder with an even lower melting point between 210°C and 220°C. With this configuration, it is possible to prevent the position of the components fixed in the previous process from changing during the heating and fixing in the next process.

[0214] [Methods for adjusting the position of FAC and SAC lenses] Next, using the manufacturing method of light source module 1, the method for adjusting the positions of multiple FAC lenses and multiple SAC lenses will be explained.

[0215] First, the manufacturing method of installing the first semiconductor laser module 101, etc., in the outer casing 2 will be described. For example... Figure 1 As shown, the first semiconductor laser module 101 is fixed to one stage of the multi-stage substrate 5 by solder or the like. Next, in the housing 2, the optical fiber 4 is fixed at a predetermined position on the sidewall 3, the 12th optical element 380 is fixed to the substrate 6, and the 7th optical element 370, which serves as a reflector, is fixed to one stage of the multi-stage substrate 5.

[0216] Next, the positions of the second optical element 320 and the fifth optical element 350 relative to the first semiconductor laser module 101 are adjusted and fixed.

[0217] At this time, using Figure 7The method for adjusting the position of the second optical element 320 and the fifth optical element 350 is described.

[0218] Figure 7 This is a perspective view illustrating the method of adjusting the position of the second optical element 320 and the fifth optical element 350.

[0219] A UV-curable resin (not shown) is coated at a designated position in one stage of the multi-level substrate 5, and a second optical element 320 and a fifth optical element 350 are disposed on the UV-curable resin. Next, the first semiconductor laser module 101 is activated, emitting a first laser beam of a predetermined amount. At this time, a portion of the first laser beam passes through the second optical element 320 and the fifth optical element 350, and is focused onto the end face of the optical fiber 4 by the seventh optical element 370 and the twelfth optical element 380, which act as mirrors.

[0220] At this time, while monitoring the intensity of the first laser beam emitted from the other end of the fiber 4, the positions of the second optical element 320 and the fifth optical element 350 are adjusted. Specifically, the position of the second optical element 320 is slightly moved in a direction parallel to the optical axis A1 (direction +A or direction -A) or in a direction parallel to the second optical axis F1 (direction +F or direction -F), and the position of the fifth optical element 350 is slightly moved in a direction parallel to the optical axis A1 (direction +A or -A) or in a direction parallel to the third optical axis S1 (direction +S or -S). At this time, the positions of the second optical element 320 and the fifth optical element 350 are adjusted in a way that maximizes the intensity of the first laser beam emitted from the other end of the fiber 4, i.e., so-called active calibration is performed. After this, by irradiating the UV-cured resin with ultraviolet light, the second optical element 320 and the fifth optical element 350 are fixed to one stage of the multi-stage substrate 5. And, in Figure 7 The shape of the first laser beam at this time is shown in the figure.

[0221] Furthermore, although the first semiconductor laser module 101 has been described here, it can also be understood as follows: Figure 1 As shown below, when multiple semiconductor laser modules 100 are set up.

[0222] First, multiple semiconductor laser modules 100 are arranged and fixed on each level of the multi-level substrate 5 using solder or the like. Then, the multiple semiconductor laser modules 100 are electrically connected in series by connecting the anode extraction electrode (e.g., anode extraction electrode 1312) and cathode extraction electrode (e.g., cathode extraction electrode 134) of each of the multiple semiconductor laser modules 100 with metal wires (e.g., metal wires 193).

[0223] Next, the positions of the 7th optical element 370, the 12th optical element 380, and the optical fiber 4, which are multiple reflectors, are adjusted and fixed by ultraviolet-cured resin or solder.

[0224] At this time, the emission position and emission direction of each laser emitted from the multiple semiconductor laser modules 100 are inconsistent with the specified emission position and emission direction in the slow axis direction and fast axis direction.

[0225] Next, for each of the plurality of semiconductor laser modules 100, a plurality of FAC lenses (e.g., the second optical element 320 and the fourth optical element 340) and a plurality of SAC lenses (e.g., the fifth optical element 350 and the sixth optical element 360) are provided. The intensity of the laser emitted from the other side of the optical fiber 4 is monitored, and simultaneously, the positions of these plurality of FAC lenses and plurality of SAC lenses are adjusted and then fixed. Accordingly, the lasers of the plurality of semiconductor laser modules 100 are efficiently focused to a predetermined position on the end face of the optical fiber 4.

[0226] [Design examples of FA lenses and FAC lenses] Here, utilizing Figures 8A to 8C Examples of a better FA lens and multiple FAC lenses in this embodiment will be described. Furthermore, the description will utilize a first optical element 310 as an example of an FA lens and a second optical element 320 as an example of multiple FAC lenses.

[0227] Figure 8A This is a cross-sectional view showing the surroundings of the first semiconductor laser module 101. Figure 8B This is a cross-sectional view showing the surrounding area of ​​the first semiconductor laser module 1011, which is another first example of the first embodiment. Figure 8C This is a cross-sectional view showing the surrounding area of ​​the first semiconductor laser module 1012, which is another second example of the first embodiment.

[0228] Figure 8A The diagram shows a first semiconductor laser module 101 as a better design. Specifically, the third divergence angle θfd12 is a value within an appropriate range (above 9 degrees and below 20 degrees).

[0229] exist Figure 8B The first semiconductor laser module 1011 shown has a first optical element 3101 with a greater optical power than the first optical element 310, which is located on the second optical axis F1. Accordingly, the beam width BFw in the direction of the second optical axis F1 of the first laser beam calibrated by the second optical element 3201 can be reduced.

[0230] However, the third divergence angle θfd121 is much smaller than the third divergence angle θfd12 of the first semiconductor laser module 101. In this case, a lens with a very long focal length is required as the second optical element 3201. Therefore, the range of motion of the second optical element 3201, which is used to adjust the calibration of the first laser beam with the third divergence angle θfd121 and the direction of travel, is very large, making adjustment difficult.

[0231] exist Figure 8C In the first semiconductor laser module 1012 shown, a first optical element 3102 with a smaller optical power than the first optical element 310 is disposed on the second optical axis F1. Accordingly, the third divergence angle θfd122 is larger than the third divergence angle θfd12 of the first semiconductor laser module 101. In this case, since the focal length of the second optical element 3202 is short, the range of movement of the position of the second optical element 3202 can be reduced.

[0232] However, even when the second optical element 3202 is brought close to the first semiconductor laser module 101, the beam width BFw in the direction of the second optical axis F1 of the first laser beam calibrated by the second optical element 3202 increases because the third divergence angle θfd122 of the first laser beam is large. Thus, the size of the optical system of the light source module involved in the second example increases.

[0233] Furthermore, regarding the focal length f2 of the plurality of FAC lenses serving as the second optical element 320 and the focal length f3 of the plurality of SAC lenses serving as the fifth optical element 350, it is sufficient that f2 < f3. The shorter f2 is, the smaller the beam width BFw in the direction of the second optical axis F1 can be, thus suppressing the increase in the size of the optical system in the light source module 1.

[0234] [Comparative Example] Here, utilizing Figures 9A to 10B The advantages of light source module 1 will be explained.

[0235] Figure 9A This is a cross-sectional view showing the periphery of the first semiconductor laser module 1013 according to the first comparative example. In the first semiconductor laser module 1013 according to the first comparative example, the first optical element 3103 is a lens with calibrable optical power on the second optical axis F1 of the first laser beam emitted from the first semiconductor laser element 11. Therefore, it is not necessary to arrange an optical element with optical power on the second optical axis F1 outside the first semiconductor laser module 1013.

[0236] Figure 9BThis is a cross-sectional view showing the surrounding area of ​​the first semiconductor laser module 1014 according to the second comparative example. In the first semiconductor laser module 1014 according to the second comparative example, the lens with calibrated optical power on the second optical axis F1 of the first laser beam emitted from the first semiconductor laser element 11 is not disposed inside the first package. Therefore, a second optical element 3204 with optical power on the second optical axis F1 is disposed near the light-transmitting window 317 on the outside of the first semiconductor laser module 1013.

[0237] Figure 10A This is a schematic diagram showing the area around the optical fiber 4 of the light source module 1 according to the first embodiment. Figure 10B This is a schematic diagram showing the area around the optical fiber 43 of the light source module involved in the first comparative example.

[0238] The following uses Figure 10A and Figure 10B The operation of the laser near the 12th optical elements 380 and 3803, and the laser binding efficiency at the end faces of the optical fibers 4 and 43, which are the objects, are explained. Figure 10A (a) and Figure 10B (a) is a schematic diagram showing the surrounding area of ​​optical fibers 4 and 43. Figure 10A (b) and Figure 10B (b) is a diagram showing the distribution of light intensity in the second optical axis F1 of the lasers incident on optical fibers 4 and 43, respectively.

[0239] In addition, Figure 10A and Figure 10B For ease of explanation, the explanation will be based on lasers emitted from the first semiconductor laser module 101, the second semiconductor laser module 102, and the third semiconductor laser module, respectively, from multiple semiconductor laser modules 100.

[0240] Here, in Figure 10A In this process, laser beams emitted from the first semiconductor laser module 101, the second semiconductor laser module 102, and the third semiconductor laser module and reaching the 12th optical element 380 are designated as the first laser beam L16, the second laser beam L26, and the third laser beam L36, respectively. Therefore, each laser beam passing through the 12th optical element 380 is designated as the first laser beam L17, the second laser beam L27, and the third laser beam L37. Furthermore, in... Figure 10B In this design, the laser beams emitted from the first semiconductor laser module 1013, the second semiconductor laser module, and the third semiconductor laser module, respectively, and arriving at the 12th optical element 3803, are designated as the first laser beam L16, the second laser beam L26, and the third laser beam L36. Therefore, each laser beam passing through the 12th optical element 3803 is designated as the first laser beam L17, the second laser beam L27, and the third laser beam L37. Furthermore, in... Figure 10A as well as Figure 10B In the process, dotted shadows are added to the first laser beams L16 and L17, the second laser beams L26 and L27, and the third laser beams L36 and L37.

[0241] like Figure 10A As shown, in this embodiment, the laser emitted from each of the plurality of semiconductor laser modules 100 is calibrated by a plurality of FAC lenses (e.g., the second optical element 320 and the fourth optical element 340) and a plurality of SAC lenses (the fifth optical element 350 and the sixth optical element 360) and incident on the twelfth optical element 380. Furthermore, in the first laser beam and the second laser beam, the first direction D1 and the second direction D2 are aligned.

[0242] As described above, the positions of the multiple FAC lenses and the multiple SAC lenses can be easily adjusted.

[0243] Therefore, the laser beams emitted from each of the multiple semiconductor laser modules 100, namely the first laser beam L17, the second laser beam L27, and the third laser beam L37, become spatially combined laser beams whose fast axes coincide on the same optical axis and are parallel to each other, and are incident on the 12th optical element 380. Meanwhile, the slow axes of the first laser beam L16, the second laser beam L26, and the third laser beam L36 do not coincide on the same optical axis. The laser beam incident on the 12th optical element 380 is effectively focused to a predetermined position on the end face of the optical fiber 4. Figure 10A As shown in the light intensity distribution diagram of fiber 4 in (b), a single-peaked light distribution with high peak intensity and narrow beam width is obtained after beam combining. That is, the laser emitted from each of the multiple semiconductor laser modules 100 is incident on the end face of fiber 4 with high combining efficiency.

[0244] In addition, the light source module involved in the first comparative example is the same as the light source module 1 except that it does not have the second optical element 320 and the first optical element 3103 is not used to calibrate the first laser beam in the fast axis direction.

[0245] exist Figure 10BIn the light source module of the first comparative example shown, the laser emitted from multiple semiconductor laser modules is calibrated in the fast axis direction by multiple FAC lenses (e.g., the first optical element 3103) near the semiconductor laser elements. In this case, the beam width of the first laser beam along the fast axis can be narrowed. However, the first optical element 3103, which can adjust the travel direction of each laser emitted from the multiple semiconductor laser modules, is hermetically sealed in the first package. Therefore, it is difficult to adjust the position of the first optical element 3103 and the travel direction of the laser. Furthermore, the optical element corresponding to the second optical element 320 is not disposed outside the first semiconductor laser module 1013. Therefore, when the light source module according to the first comparative example is manufactured, it is difficult to adjust the travel direction of the first laser beam in the fast axis direction after the optical system of the light source module is constructed. In this case, the position of the multiple FAC lenses, such as the first optical element 3103, is not precisely adjusted relative to the optical axis A1 from the semiconductor laser element to the object. Therefore, in the first comparative example, it is difficult to focus the laser beams emitted from the multiple semiconductor laser modules to a specified position. Consequently, it is difficult to efficiently incident the first laser beam L17, the second laser beam L27, and the third laser beam L37 involved in the first comparative example onto the end face of the optical fiber 43.

[0246] For example, at the incident point Figure 10B Before the 12th optical element 3803, the travel direction of the first laser beam L17 and the travel direction of the second laser beam L27, which were previously parallel, become slightly tilted. Therefore, the position reached by the first laser beam L17 deviates from the predetermined position of the end face of the optical fiber 43. Furthermore, the alignment of the third laser beam L37 deviates slightly from the alignment of the second laser beam L27. Therefore, as... Figure 10B As shown in the light intensity distribution diagram in (b), a light distribution with multiple dispersed peaks is obtained. Therefore, in the first comparative example, it becomes a light source module with low bonding efficiency to the end face of the optical fiber 43.

[0247] Furthermore, the light source module involved in the second comparative example differs from the light source module 1 in that the first optical element 310 is not disposed inside the semiconductor laser module, and the second optical element 3204 is disposed near the light-transmitting window 317.

[0248] In this case, the position of the second optical element 3204 can be adjusted. However, as... Figure 9BAs shown, because the divergence angle of the first laser beam in the fast axis direction is large, the beam width in the fast axis direction has already increased when it is incident on the second optical element 3204. Therefore, the beam width BFw in the fast axis direction increases. When combining lasers with such large beam widths in space, an optical element larger than the size of the 12th optical element 380 involved in this embodiment is required, or the number of laser beams needs to be reduced when combining them. For example, when using the 12th optical element 380 of the same size as in the first embodiment, fewer laser beams can be combined.

[0249] [Effects, etc.] As described above, the light source module 1 according to this embodiment includes: a first semiconductor laser module 101, a second optical element 320, a second semiconductor laser module 102, and a fourth optical element 340. The first semiconductor laser module 101 has a hermetically sealed first semiconductor laser element 11 and a first optical element 310. The second semiconductor laser module 102 has a hermetically sealed second semiconductor laser element 12 and a third optical element 330. The first laser beam passing through the second optical element 320 and the second laser beam passing through the fourth optical element 340 are combined. On the optical axis A1, i.e., the first optical axis, from the first semiconductor laser element 11 to the second optical element 320, the travel direction of the first laser beam is set as a first direction D1. The first laser beam has a second optical axis F1 perpendicular to the first direction D1 and a third optical axis S1 perpendicular to both the first direction D1 and the second optical axis F1. The optical power of the first optical element 310 along the second optical axis F1 is greater than that along the third optical axis S1. The first laser beam L11 reaching the first optical element 310 has a first divergence angle θfd1 and a second divergence angle θsd1, where θfd1 is the divergence angle along the second optical axis F1 and θsd1 is the divergence angle along the third optical axis S1. The first and second divergence angles θfd1 and θsd1 satisfy 90° > θfd1 > θsd1 > 0. The divergence angle along the second optical axis F1 of the first laser beam L12 emitted from the first optical element 310, i.e., the third divergence angle θfd12, decreases starting from the first divergence angle θfd1. The component along the second optical axis F1 of the first laser beam L14 emitted from the second optical element 320 is calibrated. Along the optical axis A2 (the fourth optical axis) from the second semiconductor laser element 12 to the fourth optical element 340, the travel direction of the second laser beam is defined as the second direction D2. The second laser beam has a fifth optical axis F2 perpendicular to the second direction D2, and a sixth optical axis S2 perpendicular to both the second direction D2 and the fifth optical axis F2. The optical power of the third optical element 330 on the fifth optical axis F2 is greater than that on the sixth optical axis S2. The second laser beam L21 reaching the third optical element 330 has a fourth divergence angle θfd2 and a fifth divergence angle θsd2, where the fourth divergence angle θfd2 is the divergence angle in the direction of the fifth optical axis F1, and the fifth divergence angle θsd2 is the divergence angle in the direction of the sixth optical axis S2. The fourth divergence angle θfd2 and the fifth divergence angle θsd2 satisfy 90°>θfd2>θsd2>0. The divergence angle, i.e. the sixth divergence angle θfd22, of the second laser beam L22 emitted from the third optical element 330 along the fifth optical axis F2 decreases starting from the fourth divergence angle θfd2. The component along the fifth optical axis F2 of the second laser beam L24 emitted from the fourth optical element 340 is calibrated.

[0250] Accordingly, the first semiconductor laser element 11 can be protected from the influence of impurities such as organic matter. Therefore, during the operation of the first semiconductor laser element 11, the adhesion of impurities such as organic matter to the light-emitting point of the first semiconductor laser element 11 can be suppressed, thereby preventing the degradation of the first semiconductor laser element 11. The same applies to the second semiconductor laser element 12.

[0251] Furthermore, for example, before the beam width of the first laser beam increases significantly along the second optical axis F1, the divergence angle of the first laser beam decreases from the first divergence angle θfd1 to the third divergence angle θfd12. Therefore, the beam width of the first laser beam L14 on the second optical axis F1 when incident on the second optical element 320 can be narrowed. Therefore, the size of the second optical element 320 can be reduced. That is, the size of the optical system of the light source module 1 can be reduced. The same applies to the second semiconductor laser element 12.

[0252] Furthermore, as described above, the positions of the multiple FAC lenses can be easily adjusted. Therefore, the first and second lasers emitted through the multiple FAC lenses, for example, through the 12th optical element 380, are efficiently focused onto a predetermined position at the end face of the optical fiber 4. In other words, the lasers emitted from each of the multiple semiconductor laser modules 100 can be incident on the object (the end face of the optical fiber 4) with higher combining efficiency.

[0253] In summary, this approach not only suppresses the degradation of the first semiconductor laser element 11 and the second semiconductor laser element 12, but also achieves a highly efficient and compact light source module 1 for laser bonding on the object.

[0254] Furthermore, for example, in the light source module 1 of this embodiment, in the first laser beam and the second laser beam that are combined, the first direction D1 is consistent with the second direction D2, and the second optical axis F1 is consistent with the fifth optical axis F2.

[0255] Accordingly, the laser beams emitted from each of the multiple semiconductor laser modules 100, namely the first laser beam and the second laser beam, travel as parallel laser beams whose fast axes coincide on the same optical axis and are spatially combined. Therefore, the first laser beam and the second laser beam can be incident on the target object (the end face of the optical fiber 4) with higher combining efficiency.

[0256] Furthermore, for example, in the light source module 1 according to this embodiment, the first semiconductor laser module 101 has a light-transmitting window 317, a first package 21, and a cover member 110. The light-transmitting window 317 is used to allow the first laser beam to pass through and to extract the first laser beam to the outside of the first semiconductor laser module 101. The first package 21 has a plate-shaped bottom 130 and a frame 120 with an opening 1201 (first opening) in the center. The first semiconductor laser element 11 is disposed in the opening 1201, and the cover member 110 covers the top of the opening 1201. The first semiconductor laser element 11 is hermetically sealed by the light-transmitting window 317, the first package 21, and the cover member 110.

[0257] Accordingly, the first semiconductor laser element 11 can receive power from outside the first package 21 without being affected by impurities such as organic matter from the outside of the first package 21. Therefore, during operation of the first semiconductor laser element 11, degradation of the first semiconductor laser element 11 caused by impurities such as organic matter adhering to the light-emitting point of the first semiconductor laser element 11 can be suppressed. The same applies to the second semiconductor laser element 12.

[0258] Furthermore, for example, in the light source module 1 according to this embodiment, an opening 170 (second opening) is provided in the frame 120 to spatially connect the opening 1201 with the outside of the first semiconductor laser module 101, and the light-transmitting window 317 covers the opening 170.

[0259] Accordingly, the first semiconductor laser element 11 can emit a first laser beam into the light-transmitting window 317 covering the opening 170 (the second opening).

[0260] Furthermore, for example, in the light source module 1 according to this embodiment, the frame 120 has an anode electrode 132 and a cathode electrode 135 that are electrically connected to the interior of the opening 1201 and the exterior of the first semiconductor laser module 101. At least a portion of the frame 120 is made of an insulator. The anode electrode 132, the cathode electrode 135, and the bottom 130 are electrically insulated from each other.

[0261] By providing an anode electrode 132 and a cathode electrode 135 within the housing 120, the design freedom of the first semiconductor laser module 101 can be increased.

[0262] Furthermore, for example, in the light source module 1 according to this embodiment, the frame 120 has an anode extraction electrode 131 that connects the anode electrode 132 to the outside of the first semiconductor laser module 101, and a cathode extraction electrode 134 that connects the cathode electrode 135 to the outside of the first semiconductor laser module 101. The anode extraction electrode 131 and the cathode extraction electrode 134 are disposed on the upper surface of the frame 120.

[0263] Accordingly, since the anode extraction electrode 131 and the cathode extraction electrode 134 are provided at the above-mentioned positions, the design freedom of the first semiconductor laser module 101 can be improved.

[0264] Furthermore, for example, in the light source module 1 according to this embodiment, the anode extraction electrode 131 and the cathode extraction electrode 134 are arranged in a position opposite to the light-transmitting window 317, separated by the opening 1201.

[0265] Accordingly, since the anode extraction electrode 131 and the cathode extraction electrode 134 are provided at the above-mentioned positions, the design freedom of the first semiconductor laser module 101 can be improved.

[0266] Furthermore, for example, in the light source module 1 according to this embodiment, the first semiconductor laser module 101 and the second semiconductor laser module 102 are arranged in the direction of the third optical axis S1.

[0267] Accordingly, the design freedom of the configuration of the first semiconductor laser module 101 and the second semiconductor laser module 102 can be increased.

[0268] Furthermore, for example, in the light source module 1 according to this embodiment, the cathode extraction electrode 134 of the first semiconductor laser module 101 and the anode extraction electrode 1312 of the second semiconductor laser module 102 are electrically connected by a metal wire 193.

[0269] Accordingly, adjacent semiconductor laser modules 100 can be easily connected in series within the light source module 1.

[0270] Furthermore, for example, in the light source module 1 of this embodiment, at least a portion of the first optical element 310 and at least a portion of the third optical element 330 are respectively fixed by a bonding member made of inorganic material.

[0271] Therefore, impurities such as organic matter are less likely to precipitate around the first semiconductor laser element 11. Thus, the degradation of the first semiconductor laser element 11 caused by the adhesion of impurities such as organic matter can be suppressed. The same applies to the second semiconductor laser element 12.

[0272] Furthermore, for example, in the light source module 1 according to this embodiment, the second optical element 320 is a lens having an optical functional axis and a non-optical functional axis perpendicular to the optical functional axis, and has a convex cylindrical surface on the optical functional axis, which is configured to be parallel to the second optical axis F1. The fourth optical element is a lens having an optical functional axis and a non-optical functional axis perpendicular to the optical functional axis, and has a convex cylindrical surface on the optical functional axis, which is configured to be parallel to the fifth optical axis F2.

[0273] Accordingly, the second optical element 320 and the fourth optical element 340 (multiple FAC lenses) can easily calibrate the fast axis component of the separately incident laser.

[0274] Furthermore, the light source module 1 according to this embodiment, for example, has a fifth optical element 350 and a sixth optical element 360. The component of the first laser beam L15 transmitted through the fifth optical element 350 in the direction of the third optical axis S1 is calibrated. The component of the second laser beam L25 transmitted through the sixth optical element 360 in the direction of the sixth optical axis S2 is calibrated. The first laser beam L15 transmitted through the fifth optical element 350 and the second laser beam L25 transmitted through the sixth optical element 360 are incident on the object (the end face of the optical fiber 4).

[0275] Accordingly, since the fifth optical element 350 is located outside the first package 21, its position can be easily adjusted. Therefore, the first laser beam can be focused onto a predetermined position on the end face of the optical fiber 4, which is the target, with higher efficiency. Similarly, the second laser beam can also be focused, thus enabling both the first and second laser beams to be incident on the target (the end face of the optical fiber 4) with higher combining efficiency.

[0276] Furthermore, for example, in the light source module 1 according to this embodiment, the beam width on the second optical axis F1 of the first laser beam L14 transmitted through the second optical element 320 is narrower than the beam width on the third optical axis S1 of the first laser beam L15 transmitted through the fifth optical element 350. The beam width on the fifth optical axis F2 of the second laser beam L24 transmitted through the fourth optical element 340 is narrower than the beam width on the sixth optical axis S2 of the second laser beam L25 transmitted through the sixth optical element 360.

[0277] Accordingly, the beam width BFw of the first laser beam L15 transmitted through the fifth optical element 350 on the second optical axis F1 can be narrowed, thus enabling the laser beams from other semiconductor laser modules 100 to be aligned in the direction of the second optical axis F1. Therefore, the size of the optical component (e.g., the 12th optical element 380) incident by the first laser beam L15 transmitted through the fifth optical element 350 can be reduced. The same applies to the second laser beam. In other words, the size of the optical system of the light source module 1 can be reduced.

[0278] Furthermore, for example, in the light source module 1 according to this embodiment, the first optical element 310 includes a lens having an optical functional axis and a non-optical functional axis in a direction perpendicular to the optical functional axis, and having a convex or concave cylindrical surface on the optical functional axis. This optical functional axis is configured to be parallel to the second optical axis F1. The third optical element 330 includes a lens having an optical functional axis and a non-optical functional axis in a direction perpendicular to the optical functional axis, and having a convex or concave cylindrical surface on the optical functional axis. This optical functional axis is configured to be parallel to the fifth optical axis F2.

[0279] Accordingly, the first optical element 310 can narrow the divergence angle on the second optical axis F1. The third optical element 330 is the same.

[0280] Furthermore, for example, the light source module 1 involved in this embodiment has a seventh optical element 370, which is incident by a first laser beam L15 passing through a fifth optical element 350 and a second laser beam L25 passing through a sixth optical element 360.

[0281] Therefore, the first and second laser beams can be controlled together. Consequently, the first and second laser beams can be easily combined, and they can be incident on the target object (the end face of fiber 4) with higher combining efficiency.

[0282] Furthermore, for example, in the light source module 1 according to this embodiment, the fifth optical element 350 is a lens having an optical functional axis and a non-optical functional axis in a direction perpendicular to the optical functional axis, and has a convex cylindrical surface on the optical functional axis. This optical functional axis is configured to be parallel to the third optical axis S1. The sixth optical element 360 is a lens having an optical functional axis and a non-optical functional axis in a direction perpendicular to the optical functional axis, and has a convex cylindrical surface on the optical functional axis. This optical functional axis is configured to be parallel to the sixth optical axis S2.

[0283] Accordingly, the fifth optical element 350 and the sixth optical element 360 (multiple SAC lenses) can easily calibrate the slow-axis component of the separately incident laser.

[0284] Furthermore, for example, in the light source module 1 according to this embodiment, a second optical element 320 is disposed between the first optical element 310 and the fifth optical element 350, and a fourth optical element 340 is disposed between the third optical element 330 and the sixth optical element 360.

[0285] Accordingly, since the beam width on the fast axis of the first and second laser beams can be narrowed, the optical system of the light source module 1 can be made smaller. Therefore, a small and compact light source module 1 can be realized.

[0286] Furthermore, for example, in the light source module 1 according to this embodiment, the seventh optical element 370 is composed of a plurality of mirrors.

[0287] Therefore, it is possible to reflect lasers calibrated by multiple FAC lenses and multiple SAC lenses respectively, and to deflect the direction of the laser by 90°.

[0288] Furthermore, for example, in the light source module 1 of this embodiment, the first laser beam and the second laser beam become parallel light after being emitted through the seventh optical element 370, the second optical axis F1 coincides with the fifth optical axis F2, and the third optical axis S1 coincides with the sixth optical axis S2.

[0289] Since the first laser beam and the second laser beam are parallel, and the second optical axis F1 coincides with the fifth optical axis F2, the first laser beam and the second laser beam can be incident on the object (the end face of the optical fiber 4) with a higher combining efficiency.

[0290] Furthermore, for example, the light source module 1 according to this embodiment has a 12th optical element 380, which is incident by a first laser beam L17 and a second laser beam L27 reflected by the 7th optical element 370. The first laser beam and the second laser beam transmitted through the 12th optical element 380 are focused onto the object (the end face of the optical fiber 4).

[0291] By setting up such a 12th optical element 380, the 1st laser beam and the 2nd laser beam can be incident on the object (the end face of the optical fiber 4) with a higher combining efficiency.

[0292] Furthermore, for example, in the light source module 1 according to this embodiment, the object is the end face of the optical fiber 4.

[0293] Accordingly, a small and compact light source module 1 can be realized by reducing the size of the object.

[0294] Furthermore, for example, in the light source module 1 involved in this embodiment, the first semiconductor laser element 11 is a nitride semiconductor laser element, and the second semiconductor laser element 12 is a nitride semiconductor laser element.

[0295] Generally, nitride semiconductor laser elements are prone to degradation due to the adhesion of impurities such as organic matter. However, with the above configuration, in the light source module 1 that uses nitride semiconductor laser elements as the first semiconductor laser element 11 and the second semiconductor laser element 12, the degradation of the first semiconductor laser element 11 and the second semiconductor laser element 12 can be suppressed.

[0296] (Second Implementation) Next, the second embodiment will be described. The description will focus on the differences from the first embodiment, and the description of the commonalities will be omitted or simplified.

[0297] [constitute] First use Figure 11 as well as Figure 13 The configuration of the light source module and the semiconductor laser module involved in the second embodiment will be described.

[0298] Figure 11 This is a perspective view showing the configuration of the light source module 1a according to the second embodiment. More specifically, Figure 11 (a) is a perspective view showing the overall configuration of the light source module 1a. Figure 11 (b) is an enlarged perspective view of the semiconductor laser module 100a. Figure 11 For ease of explanation, a portion of the sidewall 3 has been omitted from the illustration. Figure 13 This is an exploded perspective view used to illustrate the configuration of the first semiconductor laser module 101a in the light source module 1a.

[0299] The light source module 1a has the same configuration as the light source module 1 according to the first embodiment, except for the following two points. Specifically, the two points are: the configuration of the semiconductor laser module 100a mounted on the light source module 1a; and the configuration of the FAC lens for calibrating the fast axis composition of the laser emitted from the semiconductor laser module 100a.

[0300] In this embodiment, similar to the first embodiment, six semiconductor laser modules 100a are provided. For ease of identification, if they are referred to as semiconductor laser modules 1 to 6, then the first semiconductor laser module and the second semiconductor laser module are further referred to as 101a and 102a, respectively. Furthermore, among the plurality of semiconductor laser modules 100a, the second to sixth semiconductor laser modules have the same configuration as the first semiconductor laser module 101a. Here, the description will focus on the first semiconductor laser module 101a.

[0301] Specifically, the first optical element 310a of the first semiconductor laser module 101a is composed of an eighth optical element 318a and a ninth optical element 319a. The third optical element 330a of the second semiconductor laser module 102a is composed of a tenth optical element 338a and an eleventh optical element 339a. In this embodiment, the ninth optical element 319a is integrally formed with the light-transmitting window 317 of the first semiconductor laser module 101a. In other words, the ninth optical element 319a has the function of a light-transmitting window for extracting the first laser beam to the outside of the first semiconductor laser module 101a. Furthermore, the eleventh optical element 339a is integrally formed with the light-transmitting window 337 of the second semiconductor laser module 102a. In other words, the eleventh optical element 339a has the function of a light-transmitting window for extracting the second laser beam to the outside of the second semiconductor laser module 102a. Furthermore, the outgoing light with a negative divergence angle in the fast axis direction of the laser emitted from the first semiconductor laser module 101a and the second semiconductor laser module 102a is emitted, that is, a converged laser beam is emitted.

[0302] Therefore, the second optical element 320a and the fourth optical element 340a calibrate the fast axis direction of the laser beam that converges in the fast axis direction.

[0303] The following is a more detailed explanation.

[0304] Although the first package 21a of the semiconductor laser module 100a is composed of a bottom 130 and a frame 120a, the frame 120a differs from that in the first embodiment. The frame 120a is composed of a first frame portion 121a and a second frame portion 122a. The first frame portion 121a has an opening made of insulating material that spatially connects the exterior and interior of the first semiconductor laser module 101a. Furthermore, this opening is formed by a notch in the first direction D1. Thus, a metal film is formed on the upper surface of the first frame portion 121a, namely, a metal film constituting the anode electrode 132 and the anode extraction electrode 131, and a metal film constituting the cathode electrode 135 and the cathode extraction electrode 134, respectively. Therefore, the second frame portion 122a is mounted on one side of the metal film of the first frame portion 121a in such a way that the anode electrode 132 and the cathode electrode 135 are disposed inside itself, and the anode extraction electrode 131 and the cathode extraction electrode 134 are disposed outside itself. With this configuration, the first package 21a does not require electrodes such as through-hole electrodes to connect different frame portions (e.g., the second frame portion 122 and the third frame portion 123 in the first embodiment). Furthermore, the notch in the first frame portion 121a is formed by the bottom 130 and the second frame portion 122a clamping the first frame portion 121a, thereby creating the side opening 170. With this configuration, the first package 21a can be constructed more simply than the first package 21.

[0305] Therefore, the eighth optical element 318a and the ninth optical element 319a, which constitute the first optical element 310a as the FA lens, are both lenses with convex cylindrical surfaces. As an example, they are plano-convex cylindrical lenses made of inorganic glass, with one side being flat and the other side being convex, and anti-reflective coatings are formed on the incident and exit surfaces. In this case, within the first semiconductor laser module 101a, the convex surface of the eighth optical element 318a is the laser emission side, and the convex surface of the ninth optical element 319a is the laser incident side. Thus, the optical functional axes of the eighth optical element 318a and the ninth optical element 319a are parallel to the second optical axis F1 of the first laser beam, and their non-optical functional axes are parallel to the third optical axis S1. The eighth optical element 318a and the ninth optical element 319a have cylindrical surfaces that are convex curved along their optical functional axes, i.e., they have convex cylindrical surfaces. The third optical element 330a is also composed of lenses with convex cylindrical surfaces, namely the tenth optical element 338a and the eleventh optical element 339a, and is arranged in the second semiconductor laser module 102a.

[0306] The 9th optical element 319a and the 11th optical element 339a are integrally formed with the light-transmitting windows of the 1st semiconductor laser module 101a and the 2nd semiconductor laser module 102a, respectively. Furthermore, after a low-melting-point glass or similar material is mounted on the frame 171, the 9th optical element 319a covers the opening 170 of the first package 21a of the 1st semiconductor laser module 101a. The cover member 110 is mounted to cover the opening of the second frame portion 122a of the 1st package 21a. At this time, the frame 171 and the cover member 110 can be made of opaque materials such as ceramic or metal. Therefore, the 1st semiconductor laser element 11 can be easily hermetically sealed by the 9th optical element 319a, the frame 171, and the cover member 110. The 2nd optical element 320a and the 4th optical element 340a, which are multiple FAC lenses, are lenses with concave cylindrical surfaces. As an example, a plano-concave cylindrical lens made of inorganic glass, with one side being flat and the other side being concave, has anti-reflective coatings formed on its incident and exit surfaces. The second optical element 320a is configured such that its optical functional axis is parallel to the second optical axis F1 of the first laser beam, and its non-optical functional axis is parallel to the third optical axis S1. Both the second optical element 320a and the fourth optical element 340a have cylindrical surfaces with concave curved surfaces along their optical functional axes, i.e., concave cylindrical surfaces. Furthermore, the 12th optical element 380a, like in the first embodiment, is a condenser lens.

[0307] [The action of the laser] Next, the laser emitted from the multiple semiconductor laser modules 100a will be described. Here, the first semiconductor laser module 101a will be used as an example, and the other semiconductor laser modules 100a will also perform the same laser operation.

[0308] In this embodiment, the divergence angle θfd in the fast axis direction of the laser transmitted through the FA lens (e.g., the first optical element 310a) is negative, meaning it becomes a converging laser. Therefore, the fast axis direction of the laser shows a convergence angle θfc, expressed as θfc = -θfd, for converging.

[0309] Figure 12A This is a schematic diagram showing the optical system of the first semiconductor laser module 101a. Specifically, Figure 12A (a) is a plan view. Figure 12A (b) is shown Figure 12A A sectional view of the section plane on line bb in (a).

[0310] Figure 12B This is a schematic diagram illustrating the convergence angle involved in the second embodiment. The convergence angle of the first laser beam is the same as the divergence angle, which is 1 / (e^(-1 / 2)) of the peak intensity. 2The angle between the dashed line representing the value of ) and the optical axis A1. Figure 12B (a) shows the first semiconductor laser element 11, Figure 12B (b) shows the second semiconductor laser element 12.

[0311] The first laser beam L11, arriving at the first optical element 310a, is emitted from the light-emitting point of the first semiconductor laser element 11 as a laser beam having a first divergence angle θfd1 in the second optical axis F1 direction and a second divergence angle θsd1 in the third optical axis S1 direction. At this time, the values ​​of the first divergence angle θfd1 and the second divergence angle θsd1 are the same as in the first embodiment. Therefore, as the first laser beam L11 passes through the first optical element 310a, the third divergence angle θfd12 in the second optical axis F1 direction decreases to a negative value, resulting in a laser beam that converges at a first convergence angle θfc1, expressed as θfc1 = -θfd12 > 0. Regarding the third optical axis S1 direction of the first laser beam L11, since the first optical element 310a does not have optical power, it diverges and travels at the same second divergence angle θsd1 as before incidence.

[0312] At this point, the first optical element 310a is composed of two lenses, the eighth optical element 318a and the ninth optical element 319a, each with a specific optical power. Therefore, by using two lenses with low optical power, the third divergence angle θfd12 can be easily and significantly reduced. More preferably, to facilitate lens design, the divergence angle in the second optical axis F1 direction of the first laser beam L11 is made such that it is parallel to the eighth optical element 318a and converges to the ninth optical element 319a.

[0313] Next, the first laser beam L13 passes through the second optical element 320a, and the first laser beam is calibrated. Therefore, the first laser beam L14 passing through the second optical element 320a can become a laser with a narrow beam width BFwa in the fast axis direction. Specifically, for example, the first laser beam according to this embodiment becomes a laser with a narrow beam width in the fast axis direction compared to the first embodiment.

[0314] Furthermore, in this embodiment, it is designed to satisfy θfd1>θfc1>0. That is, it is designed such that the absolute value of the convergence angle (divergence angle) of the laser beam after passing through the first optical element 310a is smaller than the absolute value of the divergence angle of the first laser beam emitted from the first semiconductor laser element 11.

[0315] Therefore, by reducing the absolute value of the first convergence angle θfc1, the focusing position of the first laser beam will not change too sensitively even if the positions of the second optical element 320a and the fifth optical element 350 are adjusted. In other words, the sensitivity of adjusting the positions of the second optical element 320a and the fifth optical element 350 can be reduced. That is, the positions of the second optical element 320a and the fifth optical element 350 can be easily adjusted.

[0316] As described above, the second optical element 320a is a lens with a concave cylindrical surface. Therefore, the first laser beam emitted from the ninth optical element 319a is incident on the second optical element 320a in a convergent state along the second optical axis F1, thereby making the components of the first laser beam transmitted through the second optical element 320a parallel along the second optical axis F1. Therefore, when the first laser beam emitted from the ninth optical element 319a becomes light converged along the second optical axis F1, the first optical element 310a (the eighth optical element 318a and the ninth optical element 319a) can be a lens with a long focal length, or the distance between the second optical element 320a and the first package 21a can be short. Therefore, a small and compact light source module 1a can be realized.

[0317] Furthermore, the first laser beam is incident on the seventh optical element 370.

[0318] [Manufacturing methods for semiconductor laser modules and light source modules] Furthermore, utilizing Figure 11 , Figure 13 as well as Figure 14 The manufacturing methods of the semiconductor laser module 100a and the light source module 1a are described. Figure 14 This is a perspective view illustrating the method for adjusting the positions of the second optical element 320a and the fifth optical element 350. Here, the first semiconductor laser module 101a is used as an example for explanation; the manufacturing method for the other semiconductor laser modules 100a is the same. Furthermore, descriptions that overlap with the manufacturing method of the first semiconductor laser module 101 according to the first embodiment will be omitted. Similarly, descriptions of the metal wires within the first semiconductor laser module 101a will also be omitted.

[0319] First, a base 50 for the first semiconductor laser element 11 is fixedly mounted at a predetermined position on the semiconductor laser element mounting surface within the opening of the first package 21a. Similarly, the eighth optical element 318a is also fixed. Then, a ninth optical element 319a is fixed to a frame 171, which is made of metal or ceramic and has a frame-like shape, using low-melting-point inorganic glass or the like. The frame 171 of the ninth optical element 319a is then fixedly mounted to the opening 170 of the first package 21a. After wiring the wiring between the first semiconductor laser element 11 and the first package 21a using metal wires (not shown), the cover member 110 is fixed to the second frame portion 122a to achieve an airtight seal, thereby manufacturing the first semiconductor laser module 101a. At this time, the frame 171 and the cover member 110 are sealed by a bonding preparation film and a bonding member formed on the first package 21a, as in the first embodiment.

[0320] Therefore, as Figure 11 As shown, the first semiconductor laser module 101a is mounted on the light source module 1a, and is electrically connected to the anode extraction electrode 131 and the cathode extraction electrode 134 via metal wires (not shown), thereby enabling power supply to the semiconductor laser element. Thus, as... Figure 14 As shown, similar to the first embodiment, the positions of the second optical element 320a and the fifth optical element 350 are adjusted and fixed. Although the second optical element 320a is a lens with a concave cylindrical surface, the position adjustment method is the same as in the first embodiment.

[0321] [Advantages over the first embodiment] Here, utilizing Figure 7 , Figure 14 as well as Figure 15 The advantages of the light source module 1a involved in this embodiment will be explained.

[0322] Figure 15 The diagram illustrates the incident light distribution of laser light emitted from the seventh optical elements 370 and 370a according to the first and second embodiments, before reaching the twelfth optical elements 380 and 380a. More specifically, Figure 15 (a) shows Figure 7 The incident light distribution in the first embodiment of the optical system is shown. Figure 15 (b) shows Figure 14 The incident light distribution involved in the second embodiment.

[0323] Here as Figure 15As shown in (a), the laser beams emitted from each of the first to sixth semiconductor laser modules, which are incident on the 12th optical element 380 according to the first embodiment, are respectively designated as the first to sixth laser beams, namely L16, L26, L36, L46, L56, and L66. Similarly, as Figure 15 As shown in (b), the laser beams emitted from each of the first to sixth semiconductor laser modules, which are incident on the 12th optical element 380a according to the second embodiment, are respectively designated as the first to sixth laser beams, namely L16a, L26a, L36a, L46a, L56a, and L66a. The same design is also applied to the optical system in the slow axis direction of the laser.

[0324] As described above, compared to the first embodiment, the first laser beam emitted from the first semiconductor laser module 101a according to this embodiment is a laser with a beam width BFwa in the fast axis direction that is narrower than the beam width BFw in the first embodiment, and is directed toward the 12th optical element 380a. Therefore, the same applies to the lasers emitted from each of the plurality of semiconductor laser modules 100a.

[0325] Therefore, as Figure 15 As shown in (b), by reducing the height of each stage of the multi-stage substrate 5 used to assemble multiple semiconductor laser modules 100a, the first to sixth laser beams L16a, L26a, L36a, L46a, L56a, and L66a can be combined at a higher density in the fast axis direction. Therefore, as Figure 15 As shown in the comparison between (a) and (b), in this embodiment, compared to the first embodiment, a smaller 12th optical element 380a can be used. Furthermore, even with this 12th optical element 380a, multiple lasers can be efficiently combined. Therefore, a light source module 1a with a small size, especially in the height direction (the direction of the second optical axis F1), is achieved.

[0326] [Effects, etc.] As described above, in the light source module 1a of this embodiment, at least a portion of the first optical element 310a (here, the ninth optical element 319a) is integrally formed with the light-transmitting window 317.

[0327] Accordingly, the number of components constituting the first semiconductor laser module 101b can be reduced.

[0328] Furthermore, for example, in the light source module 1a according to this embodiment, in the first laser beam transmitted through the first optical element 310a, the component of the second optical axis F1 converges towards the second optical element 320a. In the second laser beam transmitted through the third optical element 330a, the component of the fifth optical axis F2 converges towards the fourth optical element 340a.

[0329] Thus, because the first laser beam passing through the first optical element 310a is focused, the focusing position of the first laser beam is not easily affected by changes in the positions of the second optical element 320a and the fifth optical element 350, even if the positions of these two optical elements are adjusted. That is, the positions of the second optical element 320a and the fifth optical element 350 can be easily adjusted. The same applies to the second laser beam. Therefore, the laser beams emitted from each of the multiple semiconductor laser modules 100a can be incident on the target object (the end face of the optical fiber 4) with higher combining efficiency.

[0330] Furthermore, for example, in the light source module 1a according to this embodiment, in the first laser beam transmitted through the first optical element 310a, the divergence angle in the direction of the second optical axis F1, i.e., the third divergence angle θfd12, serves as the first convergence angle θfc1, satisfying θfc1 = -θfd12 > 0. In the second laser beam transmitted through the third optical element 330a, the divergence angle in the direction of the fifth optical axis F2, i.e., the sixth divergence angle θfd22, serves as the second convergence angle θfc2, satisfying θfc2 = -θfd22 > 0. The first divergence angle θfd1, the first convergence angle θfc1, the fourth divergence angle θfd2, and the second convergence angle θfc2 satisfy θfd1 > θfc1 > 0 and θfd2 > θfc2 > 0.

[0331] In this way, by sufficiently reducing the first convergence angle θfc1, the focusing position of the first laser beam is not easily affected by changes in sensitivity, even if the positions of the second optical element 320a and the fifth optical element 350 are adjusted. That is, the positions of the second optical element 320a and the fifth optical element 350 can be easily adjusted. The same applies to the second laser beam. Therefore, the laser emitted from each of the multiple semiconductor laser modules 100a can be incident on the target object (the end face of the optical fiber 4) with higher combining efficiency.

[0332] Furthermore, for example, in the light source module 1a according to this embodiment, the second optical element 320a is a lens having an optical functional axis and a non-optical functional axis in a direction perpendicular to the optical functional axis, and has a concave cylindrical surface on the optical functional axis. This optical functional axis is configured to be parallel to the second optical axis F1. The fourth optical element 340a is a lens having an optical functional axis and a non-optical functional axis in a direction perpendicular to the optical functional axis, and has a concave cylindrical surface on the optical functional axis. This optical functional axis is configured to be parallel to the fifth optical axis F2.

[0333] Accordingly, since the first laser beam emitted from the first optical element 310a (here, the ninth optical element 319a) is incident on the second optical element 320a in a state of convergence along the second optical axis F1, the component of the first laser beam passing through the second optical element 320a along the second optical axis F1 can be made parallel. The same applies to the second laser beam. Therefore, a small and compact light source module 1a can be realized.

[0334] Furthermore, for example, in the light source module 1a according to this embodiment, the first optical element 310a is composed of the eighth optical element 318a and the ninth optical element 319a. The third optical element 330a is composed of the tenth optical element 338a and the eleventh optical element 339a.

[0335] Accordingly, for example, by combining the 8th optical element 318a and the 9th optical element 319a, which are lenses with small curvature, it is possible to achieve the same effect as using a convex lens with large curvature.

[0336] Furthermore, for example, in the light source module 1a according to this embodiment, the eighth optical element 318a is a lens having an optical functional axis and a non-optical functional axis in a direction perpendicular to the optical functional axis, and has a convex cylindrical surface on the optical functional axis. This optical functional axis is configured to be parallel to the second optical axis F1. The ninth optical element 319a is a lens having an optical functional axis and a non-optical functional axis in a direction perpendicular to the optical functional axis, and has a convex cylindrical surface on the optical functional axis. This optical functional axis is configured to be parallel to the second optical axis F1. The tenth optical element 338a is a lens having an optical functional axis and a non-optical functional axis in a direction perpendicular to the optical functional axis, and has a convex cylindrical surface on the optical functional axis. This optical functional axis is configured to be parallel to the third optical axis S1. The eleventh optical element 339a is a lens having an optical functional axis and a non-optical functional axis in a direction perpendicular to the optical functional axis, and has a convex cylindrical surface on the optical functional axis. The optical functional axis is configured to be parallel to the third optical axis S1.

[0337] Accordingly, the first optical element 310a is composed of two lenses, the eighth optical element 318a and the ninth optical element 319a, each with optical power. Therefore, by using two lenses with low optical power, the third divergence angle θfd12 can be significantly reduced. The same applies to the third optical element 330a.

[0338] The following describes the first to tenth variations of the second embodiment. The description will focus on the differences from the second embodiment and other embodiments, and the description of the commonalities will be omitted or simplified.

[0339] (First variation of the second embodiment) Figure 16 This is a cross-sectional view showing the configuration of the first semiconductor laser module 101b of the light source module according to the first variation of the second embodiment.

[0340] In the light source module according to the first variation of the second embodiment, the configuration is the same as that of the light source module 1a according to the second embodiment, except for the following point. Specifically, the difference is that the ninth optical element 319b, which is part of the first optical element 310b, is integral with the frame 171 shown in the second embodiment.

[0341] Accordingly, the number of components constituting the first semiconductor laser module 101b can be reduced.

[0342] Figure 17 This is a schematic diagram illustrating the configuration and manufacturing method of the first semiconductor laser module 101b according to the first variation of the second embodiment.

[0343] In this modified example, the first package 21 is the same as in the first embodiment. Furthermore, although the ninth optical element 319b is a plano-convex cylindrical lens, the protrusion of the ninth optical element 319b can be formed only in the central portion, while the peripheral portion can be formed as a flat area. Thus, a base metal film (not shown) and a fourth bonding member 144, such as AuSn, as solder are formed in the peripheral portion of the ninth optical element 319b. Therefore, the ninth optical element 319b is pressed against the opening 170 of the frame 120 and can be easily fixed by heating.

[0344] (Second variation of the second embodiment) Figure 18 This is a cross-sectional view showing the configuration of the first semiconductor laser module 101c in the light source module according to the second variation of the second embodiment.

[0345] In the light source module of the second variation of the second embodiment, the main configuration is the same as that of the light source module 1a of the second embodiment, except for the following two points. Specifically, the two points mentioned above are that the ninth optical element 319c, which is part of the first optical element 310c, is hermetically sealed in the first package 21c, and a light-transmitting window 317 is provided to block the opening 170.

[0346] The ninth optical element 319c is disposed above the second support member 162. The ninth optical element 319c is the same as the ninth optical element 319a according to the second embodiment, and is a lens with a convex cylindrical surface, configured such that its optical functional axis is parallel to the second optical axis F1. The second support member 162 is disposed above the bottom 130 and is used to adjust the position of the ninth optical element 319c relative to the first laser beam. The light-transmitting window 317 is configured the same as the light-transmitting window 317 in the first embodiment.

[0347] Accordingly, the design freedom of the optical system constituting the first semiconductor laser module 101c can be increased.

[0348] Figure 19 This is a schematic diagram illustrating a method for manufacturing the first semiconductor laser module 101c according to a second variation of the second embodiment.

[0349] In this modified example, after the eighth optical element 318a is fixed, the ninth optical element 319c is fixed by the second support member 162 at a predetermined height and distance relative to the first semiconductor laser element 11. Then, the light-transmitting window 317 is fixed at the opening 170 of the frame 120.

[0350] (Third variation of the second embodiment) Figure 20 This is a schematic diagram illustrating the optical system of the first semiconductor laser module 101d included in the light source module 1d according to the third modification of the second embodiment. Specifically, Figure 20 (a) is a plan view. Figure 20 (b) is shown Figure 20 A sectional view of the section plane on line bb in (a).

[0351] In the light source module 1d of the third variation of the second embodiment, the main configuration is the same as that of the light source module of the second variation of the second embodiment, except for the following point. Specifically, the difference is that a first optical element 310d is provided, which integrates the eighth optical element 318a and the ninth optical element 319c of the second variation of the second embodiment.

[0352] Accordingly, the number of components constituting the first semiconductor laser module 101d can be reduced.

[0353] Figure 21A This is a schematic diagram illustrating an example of a method for manufacturing the first semiconductor laser module 101d according to a third variation of the second embodiment. Figure 21BThis is a schematic diagram illustrating another example of a method for manufacturing the first semiconductor laser module 101d according to a third variation of the second embodiment. More specifically, Figure 21B (a) is the manufacturing process of the frame 120 and the bottom 130. Figure 21B (b) is the process in which the first semiconductor laser module 101d is manufactured.

[0354] A first metal film 137 and a second bonding member 142 are formed on the surface of the base 50, but no second metal film is formed. Instead, a metal wire 190d connected to the substrate side of the first semiconductor laser element 11 is directly connected to the cathode electrode 135 of the first package 21d.

[0355] The first package 21d differs in construction from the first package 21. Specifically, the first package 21d is configured such that the first frame portion 121a and the bottom portion 130 in the first package 21 are integrated. In the first package 21d, an opening 170 is formed in the portion surrounded by the bottom portion 130, the second frame portion 122b, and the third frame portion 123c.

[0356] (Fourth variation of the second embodiment) Figure 22 This is a schematic diagram illustrating the optical system of the first semiconductor laser module 101e included in the light source module 1e according to the fourth modification of the second embodiment. Specifically, Figure 22 (a) is a plan view. Figure 22 (b) is shown Figure 22 A sectional view of the section plane on line bb in (a).

[0357] The light source module 1e is identical to the light source module 1a in the second embodiment, except for the following point. Specifically, the difference lies in the first optical element 310e, which integrates the eighth optical element 318a and the ninth optical element 319a in the second embodiment.

[0358] like Figure 22 As shown, the first optical element 310e is a lens with a convex cylindrical surface, configured such that its optical functional axis is parallel to the second optical axis F1. Furthermore, the first optical element 310e and the light-transmitting window 317 are integrally formed. A portion of the first optical element 310e is hermetically sealed within the first package 21. More specifically, a portion of the first optical element 310e is the incident surface of the first laser beam on the first optical element 310e.

[0359] (Fifth variation of the second embodiment) Figure 23This is a cross-sectional view showing the optical system of the first semiconductor laser module 101f included in the light source module 1f according to the fifth variation of the second embodiment.

[0360] In the light source module 1f, except for the following two points, the remaining configuration is the same as that of the light source module 1a according to the second embodiment. Specifically, the two differences are that the eighth optical element 318f, which is part of the first optical element 310f, has a concave mirror surface, and the convex surface of the ninth optical element 319f, which is part of the first optical element 310f, faces the outside of the first package 21.

[0361] In this modified example, the eighth optical element 318f has a reflective, concave mirror surface. Furthermore, the concave mirror surface is, for example, a parabolic surface. The eighth optical element 318f is configured to face the light-emitting point 60 of the first semiconductor laser element 11. While the eighth optical element 318f deflects the direction of the laser emitted from the light-emitting point 60 at a first divergence angle θfd1 along the fast axis direction by 90°, it also reduces the divergence angle along the fast axis direction of the laser reflected from the eighth optical element 318f. The laser reflected from the eighth optical element 318f is incident on the ninth optical element 319f.

[0362] Accordingly, the relationship between the orientation of the bottom 130 of the first semiconductor laser module 101f and the orientation of the laser emitted from the first semiconductor laser module 101f is, for example, different from the relationship between the orientation of the bottom 130 of the first semiconductor laser module 101 and the orientation of the laser emitted from the first semiconductor laser module 101 in the first embodiment. That is, the design freedom for arranging multiple semiconductor laser modules, such as the first semiconductor laser module 101f, is increased.

[0363] (Sixth variation of the second embodiment) Figure 24 This is a schematic diagram illustrating the optical system of the first semiconductor laser module 101g included in the light source module 1g according to the sixth modification of the second embodiment. Specifically, Figure 24 (a) is a plan view. Figure 24 (b) is shown Figure 24 A sectional view of the section plane on line bb in (a).

[0364] In the light source module 1g, except for the following point, the remaining configuration is the same as that of the light source module 1a according to the second embodiment. Specifically, the ninth optical element 319g, which is part of the first optical element 310g, is a rotationally symmetric convex lens.

[0365] like Figure 24As shown, the first laser beam passing through the 9th optical element 319g converges at a first convergence angle θfc1 in the direction of the 2nd optical axis F1. Furthermore, the first laser beam passing through the 9th optical element 319g, after converging and focusing at a convergence angle θsc1 in the direction of the 3rd optical axis S1, diverges at a divergence angle θsc1 and is incident on the 5th optical element 350.

[0366] In this case, since the 9th optical element 319g is a convex lens that also has optical power in the direction of the 3rd optical axis S1, the distance between the 9th optical element 319g and the 5th optical element 350 constituting the window of the 1st package 21 is increased. Therefore, the position of the 5th optical element 350 can be easily designed.

[0367] (Seventh variation of the second embodiment) Figure 25 This is a schematic diagram illustrating the optical system of the first semiconductor laser module 101h included in the seventh modification of the second embodiment. Specifically, Figure 25 (a) is a plan view. Figure 25 (b) is shown Figure 25 A sectional view of the section plane on line bb in (a).

[0368] In the light source module 1h, the main difference is that the configuration is the same as that of the light source module 1a in the second embodiment, except for the following point. Specifically, the second optical element 320h is a lens with optical power in the direction of the second optical axis F1 and a convex cylindrical surface.

[0369] like Figure 25 As shown, the first laser beam passing through the 9th optical element 319h converges and focuses at a first convergence angle θfc1 along the second optical axis F1, and then diverges at a divergence angle θfc1 before incident on the second optical element 320h. In this case, since the second optical element 320h is a lens with optical power and a convex cylindrical surface in the direction of the second optical axis F1, the distance between the 9th optical element 319h and the second optical element 320h constituting the window of the first package 21 can be increased. Therefore, the design of the position of the second optical element 320h becomes easier.

[0370] Furthermore, since the second optical element 320h is positioned near the convergence point of the first laser beam, the beam width BFw in the fast axis direction of the first laser beam can be narrowed.

[0371] (Eighth variation of the second embodiment) Figure 26This is a schematic diagram illustrating the optical system of the first semiconductor laser module 101i included in the light source module 1i according to the eighth modification of the second embodiment. Specifically, Figure 26 (a) is a plan view. Figure 26 (b) is shown Figure 26 A sectional view of the section plane on line bb in (a).

[0372] The light source module 1i has a configuration in which the second optical element 320a of the light source module 1d according to the third modification of the second embodiment is replaced with the second optical element 320h of the seventh modification of the second embodiment.

[0373] (Ninth variation of the second embodiment) Figure 27 This is a schematic diagram illustrating the optical system of the first semiconductor laser module 101j included in the light source module 1j according to the ninth modification of the second embodiment. Specifically, Figure 27 (a) is a plan view. Figure 27 (b) is shown Figure 27 A sectional view of the section plane on line bb in (a).

[0374] The light source module 1j has a configuration in which the second optical element 320a of the light source module 1e according to the fourth modification of the second embodiment is replaced with the second optical element 320h of the seventh modification of the second embodiment.

[0375] (10th variation of the second embodiment) Figure 28 This is a schematic diagram illustrating the optical system of the first semiconductor laser module 101k included in the light source module 1k according to the 10th variation of the second embodiment. Specifically, Figure 28 (a) is a plan view. Figure 28 (b) is shown Figure 28 A sectional view of the section plane on line bb in (a).

[0376] The light source module 1k has a configuration in which the second optical element 320a of the light source module 1g according to the sixth modification of the second embodiment is replaced with the second optical element 320h of the seventh modification of the second embodiment.

[0377] (Third Implementation) Next, the third embodiment will be described. In the third embodiment, unlike the first and second embodiments, a plurality of semiconductor laser elements are arranged in a two-dimensional semiconductor laser module. The following description focuses on the differences from the second embodiment, omitting or simplifying descriptions of commonalities.

[0378] Figure 29 This is a perspective view showing the optical system of the light source module 1m according to the third embodiment. Figure 30 It is shown Figure 29 A cross-sectional view of the optical system of the light source module 1m on the XXX-XXX line. Figure 31 This is a perspective view showing the configuration of the semiconductor laser module 100m of the light source module 1m.

[0379] like Figures 29 to 31 As shown, the light source module 1m includes a semiconductor laser module 100m, multiple FAC lenses, multiple SAC lenses, a 7th optical element 370m, a 12th optical element 380m, and a 4m optical fiber. The multiple FAC lenses are composed of a 2nd optical element 320m and a 4th optical element 340m, etc. The multiple SAC lenses are composed of a 5th optical element 350m and a 6th optical element 360m, etc. The 7th optical element 370m is composed of multiple 1st reflectors 371 and multiple 2nd reflectors 372.

[0380] The semiconductor laser module 100m has a first package 21m, a plurality of semiconductor laser elements (e.g., a first semiconductor laser element 11 and a second semiconductor laser element 12), a plurality of bases 50, and a lens array optical element 400. The lens array optical element 400 is an optical element in which the first optical element 310m and the third optical element 330m are integrated.

[0381] The first package 21m has a bottom 130m, a frame 120m, and multiple supports 180. The bottom 130m is, for example, a flat plate-shaped component made of a material with high thermal conductivity such as Cu. The frame 120 is frame-shaped with an opening in the center, and is made of Kovar iron-nickel-cobalt alloy or the like, and is fixed to the bottom 130m by silver solder or the like. Furthermore, an anode extraction electrode 131m, serving as multiple lead pins, is formed on one side wall of the frame 120m. On the side wall of the frame 120m opposite to the side wall of the frame 120m where the anode extraction electrode 131m is formed, a cathode extraction electrode 134m, serving as multiple lead pins, is formed. The anode extraction electrode 131m and the cathode extraction electrode 134m are arranged to penetrate the frame 120m and are fixed to the frame 120m by an insulating ring made of insulating inorganic glass or the like.

[0382] The multiple supports 180 are cuboid components made of a material with high thermal conductivity, such as Cu. Furthermore, the multiple supports 180 are arranged at predetermined intervals along the minor axis (x-direction) on the surface of the bottom 130m (positive z-axis side). The multiple supports 180 are fixed to the bottom 130m with silver solder or the like.

[0383] The frame 120m is arranged perpendicular to the bottom 130m. Furthermore, the frame 120m is configured to surround a plurality of pillars 180. A plurality of semiconductor laser elements are mounted via bases 50, arranged along the long axis (y-direction) on the sides of each of the pillars 180. That is, the plurality of semiconductor laser elements are arranged in a two-dimensional configuration at the opening of the frame 120m. More specifically, the plurality of semiconductor laser elements are arranged in a matrix at the opening of the frame 120m. While this embodiment shows a configuration of 16 semiconductor laser elements in 4 rows and 4 columns, it is not a limitation. In this case, each of the plurality of semiconductor laser elements and each of the bases 50 is fixed using an inorganic material such as AuSn solder. Furthermore, the plurality of semiconductor laser elements mounted on one pillar 180 are electrically connected in series by metal wires (not shown), and the anode extraction electrode 131m is connected to the cathode extraction electrode 134m. In addition, for ease of identification, examples of multiple semiconductor laser elements are described as a first semiconductor laser element 11, a second semiconductor laser element 12, and a third semiconductor laser element 13.

[0384] The first semiconductor laser element 11, the second semiconductor laser element 12, and the third semiconductor laser element 13, as examples, are nitride-based semiconductor laser elements that irradiate the first, second, and third laser beams. The first, second, and third laser beams are emitted from the bottom 130m towards the frame 120m in a direction (positive z-axis direction, z-direction). The slow axes (third optical axis S1, sixth optical axis S2, etc.) of the first, second, and third laser beams are along the major axis (y-direction) of the support column 180, and the fast axes (second optical axis F1, fifth optical axis F2, etc.) are along the direction in which the multiple supports 180 are arranged (x-direction). The second semiconductor laser element 12, although positioned on a different side of the support column 180 relative to the first semiconductor laser element 11, is arranged along the second optical axis F1. The third semiconductor laser element 13, relative to the first semiconductor laser element 11, is positioned on the same side of the support column 180 and arranged along the third optical axis S1.

[0385] The lens array optical element 400 is an optical component into which a first laser beam, a second laser beam, and a third laser beam emitted from a first semiconductor laser element 11, a second semiconductor laser element 12, and a third semiconductor laser element 13 are incident. The lens array optical element 400 has a plurality of biconvex cylindrical lens structures that function as FA lenses. In this embodiment, as... Figures 29 to 31As shown, the multiple biconvex cylindrical lens structures are lens structures that extend in the same shape along the long axis direction of the pillar 180, i.e., the direction of the third optical axis S1. The multiple biconvex cylindrical lens structures have a first optical element 310m, which is a biconvex cylindrical lens structure and is incident on the first laser beam and the third laser beam, and a third optical element 330m, which is a biconvex cylindrical lens and is incident on the second laser beam, arranged in the x-direction.

[0386] Furthermore, the lens array optical element 400 is a component that covers the opening of the frame 120m, which is disposed on the z-axis positive direction side of the frame 120m. That is, in this embodiment, the lens array optical element 400 is an optical component that integrates the cover component and the light-transmitting window. The peripheral portion of the lens array optical element 400 has a flat edge portion that does not form a biconvex cylindrical lens structure, and the flat stepped portion 121m on the inner side of the frame 120m is fixed by welding material or the like. Therefore, multiple semiconductor laser elements are hermetically sealed within the first package 21m by the frame 120m, the lens array optical element 400, and the bottom 130m. With the above configuration, the first semiconductor laser element 11 can be hermetically sealed using the lens array optical element 400. That is, the number of components constituting the light source module 1m can be reduced.

[0387] In the laser emission direction of the semiconductor laser module 100m, multiple FAC lenses incident by lasers (such as the first laser beam L13) are arranged in a 4x4 matrix along the second optical axis F1 direction (ξ direction, x direction) and the third optical axis S1 direction (η direction, y direction), corresponding to the multiple lasers. The configuration of each of the multiple FAC lenses is the same as that of the second optical element 320a according to the second embodiment. That is, the first laser beam L13 is incident on the second optical element 320m. The second laser beam L23 is incident on the fourth optical element 340m.

[0388] Furthermore, the SAC lenses into which the laser beams emitted through the multiple FAC lenses (such as the first laser beam L14) are incident are also arranged in a 4x4 matrix along the second optical axis F1 direction (ξ direction) and the third optical axis S1 direction (η direction). The configuration of each of the multiple SAC lenses is the same as that of the fifth optical element 350 according to the second embodiment. That is, the first laser beam L14 is incident on the fifth optical element 350m, and the second laser beam L24 is incident on the sixth optical element 360m.

[0389] Multiple FAC lenses and multiple SAC lenses are respectively adjusted to optimal positions relative to multiple lasers emitted from the semiconductor laser module 100m and fixed by UV-curable adhesives, etc. Due to the action of multiple FAC lenses and multiple SAC lenses, the beam width of multiple lasers emitted from multiple laser elements (e.g., the first laser beam L15 and the second laser beam L25) in the second optical axis F1 direction is narrowed, and they become parallel calibration beams that travel towards the seventh optical element 370m.

[0390] exist Figure 30 In this diagram, the beam width along the second optical axis F1 (fast axis) of the first laser beam L15, which passes through the fifth optical element 350m (serving as a SAC lens), is represented by BFw1. Similarly, the beam width along the second optical axis F1 (fast axis) of all lasers passing through multiple SAC lenses is represented by BFw2. The overall beam width BFw2 of the multiple lasers passing through multiple SAC lenses corresponds to the spacing between the multiple semiconductor laser elements, and is therefore wider.

[0391] Multiple laser beams passing through multiple SAC lenses are reflected by multiple first reflectors 371 and further reflected by multiple second reflectors 372. The multiple first reflectors 371 correspond to the multiple laser beams and are arranged in 4 rows and 4 columns, totaling 16. Furthermore, the multiple first reflectors 371 are arranged with their reflecting surfaces tilted at 45° relative to the first direction D1 of the first laser beam.

[0392] Therefore, in the direction from the first semiconductor laser element 11 toward the second semiconductor laser element 12, the reflecting surfaces of the plurality of first reflectors 371 are arranged sequentially close to the semiconductor laser module 100m at intervals of about beam width BFw1. Accordingly, the fast axes of the lasers (first laser beam L15 and second laser beam L25, etc.) emitted from the first semiconductor laser element 11 and the semiconductor laser elements (second semiconductor laser element 12, etc.) arranged in the direction of the second optical axis F1 of the first semiconductor laser element 11 coincide, and they are combined into a laser beam with a beam interval of about one laser beam width, which travels in the direction (negative x-axis direction) of the plurality of second reflectors 372.

[0393] And in Figure 30 The document also describes multiple first reflectors 371 corresponding to the laser emitted from the third semiconductor laser element 13 and the laser emitted from semiconductor laser elements arranged in the second optical axis F1 direction starting from the third semiconductor laser element 13.

[0394] The first reflector 371 corresponding to the third semiconductor laser element 13 and the semiconductor laser elements arranged in the direction of the second optical axis F1 starting from the third semiconductor laser element 13 is positioned 100m away from the semiconductor laser module compared to the first reflector 371 corresponding to the first semiconductor laser element 11.

[0395] The first reflector 371, which corresponds to the semiconductor laser elements arranged in the direction of the second optical axis F1 starting from the third semiconductor laser element 13, is also arranged in the same way, with each reflector arranged sequentially close to the semiconductor laser module 100m at intervals of about the beam width BFw1.

[0396] Therefore, the first reflector 371 corresponding to the semiconductor laser element farthest from the third semiconductor laser element 13, and the reflector corresponding to the first semiconductor laser element 11, are arranged at an interval of about the beam width BFw1 in the first direction D1. With this configuration, the fast axes of the lasers emitted from the third semiconductor laser element 13 and the semiconductor laser elements arranged in the second optical axis F1 direction of the third semiconductor laser element 13 coincide, and they are combined into a laser beam with an interval of about the beam width of one laser beam, which travels in the direction (negative x-axis direction) of the plurality of second reflectors 372.

[0397] Here, we will first describe eight of the sixteen semiconductor laser elements. Figure 30 In the diagram, the third semiconductor laser element 13, the semiconductor laser elements arranged along the second optical axis F1 starting from the third semiconductor laser element 13, and the laser emitted from these semiconductor laser elements appear to coincide with the first semiconductor laser element 11, the second semiconductor laser element 12, and the first and second laser beams, respectively. However, their positions along the third optical axis S1 are offset. Thus, the laser emitted from the first semiconductor laser element 11 and the semiconductor laser elements arranged along the second optical axis F1 starting from the first semiconductor laser element 11, and the laser emitted from the third semiconductor laser element 13 and the semiconductor laser elements arranged along the second optical axis F1 starting from the third semiconductor laser element 13, after being reflected by multiple first reflectors 371, are arranged at intervals of approximately beam width BFw1 along the second optical axis F1 (z direction) when viewed from the third optical axis S1 (y direction). In this way, by being reflected by multiple first reflectors 371, the total beam width BFw3 of the entirety of the multiple lasers (eight lasers in this embodiment) emitted from multiple semiconductor laser elements in the direction of the second optical axis F1 (fast axis) can be sufficiently narrowed compared with the beam width BFw2 before incident.

[0398] Furthermore, the laser emitted from the remaining 8 semiconductor laser elements out of the 16 semiconductor laser elements has the same configuration as the aforementioned 8 semiconductor laser elements, which are arranged in 2 columns.

[0399] Further as Figure 29 As shown, multiple laser beams reflected by multiple first reflectors 371 are reflected by multiple second reflectors 372. At this time, laser beams emitted from semiconductor laser elements arranged in the second optical axis F1 direction are reflected by the same second reflector 372. Thus, the reflecting surface of the second reflector 372 that reflects laser beams emitted from the first semiconductor laser element 11 and from semiconductor laser elements arranged in the second optical axis F1 direction starting from the first semiconductor laser element 11, and the reflecting surface of the second reflector 372 that reflects laser beams emitted from the third semiconductor laser element 13 and from semiconductor laser elements arranged in the second optical axis F1 direction starting from the third semiconductor laser element 13, are aligned in the third optical axis S1 direction. Therefore, the laser emitted from the first semiconductor laser element 11, the laser emitted from semiconductor laser elements arranged along the second optical axis F1 starting from the first semiconductor laser element 11, and the laser emitted from the third semiconductor laser element 13, as well as the laser emitted from semiconductor laser elements arranged along the second optical axis F1 starting from the third semiconductor laser element 13, become lasers aligned along the second optical axis F1 (fast axis). Thus, the multiple lasers emitted from the semiconductor laser module 100m, after exiting from the multiple second reflectors 372, form a 2x8 laser group that travels towards the 12th optical element 380m. Consequently, the beam width along the third optical axis S1 (slow axis) of the multiple lasers as a whole becomes narrower.

[0400] Multiple laser beams reflected by multiple second reflectors 372 reach the 12th optical element 380m. The multiple laser beams focused by the 12th optical element 380m are incident on the optical fiber 4m. Furthermore, the 12th optical element 380m is an optical component corresponding to the 12th optical element 380a in the second embodiment.

[0401] The light source module 1m involved in this embodiment is a module that enables the laser emitted from each of the multiple semiconductor laser elements in a semiconductor laser module 100m to be combined in space and emitted through an optical system.

[0402] Specifically, in the semiconductor laser module 100m, the position of an optical element integrating multiple FA lenses (i.e., lens array optical element 400) relative to the 16 semiconductor laser elements is adjusted and fixed. Therefore, due to the different positions of the individual semiconductor laser elements, the position of the corresponding FA lens is not adjusted to the optimal position. However, in the light source module 1m, in addition to the optical element integrating multiple FA lenses (i.e., lens array optical element 400), multiple FAC lenses and multiple SAC lenses corresponding to each semiconductor laser element are prepared. Therefore, the positions of the multiple FAC lenses and multiple SAC lenses are adjusted separately relative to the multiple lasers from the semiconductor laser module 100m, thereby enabling the emission of calibrated lasers that are parallel to each other. Therefore, using the 7th optical element 370m, spatial beam combining of multiple lasers can be easily achieved. Furthermore, the divergence angle of the fast axis component of the multiple lasers emitted from the semiconductor laser module 100m is smaller than the divergence angle of the lasers emitted from the semiconductor laser elements. Therefore, the position of the multiple FAC lenses can be easily adjusted.

[0403] Furthermore, with the configuration of this embodiment, the beam width of the multiple laser beams can be reduced in both the second optical axis F1 direction and the third optical axis S1 direction. Therefore, the multiple laser beams can be incident on the target object (the end face of the 4m optical fiber) with high combining efficiency.

[0404] Furthermore, the semiconductor laser module 100m involved in this embodiment can also be described as a module in which the first semiconductor laser module and the second semiconductor laser module are integrated.

[0405] The first and second modifications of the third embodiment will be described below. The description will focus on the differences from the third embodiment and other embodiments, and the description of the commonalities will be omitted or simplified.

[0406] (First variation of the third embodiment) Figure 32A This is a perspective view showing the configuration of a semiconductor laser module 100n in the light source module 1n according to the first variation of the third embodiment. Figure 32B It is a cross-sectional view showing the configuration of the periphery of the first semiconductor laser element 11 of a semiconductor laser module 100n in a schematic manner.

[0407] In the semiconductor laser module 100n, except for the following three points, the rest of the configuration is the same as that of the light source module 1m according to the third embodiment. Specifically, the three differences are: multiple pillars 180 are provided, multiple semiconductor laser elements are directly disposed on the bottom 130m via multiple bases 50, and a 13th optical element 390 is provided corresponding to the laser emission side of each semiconductor laser element.

[0408] Multiple 13th optical elements 390 are located at positions corresponding to multiple semiconductor laser elements. As an example, the 13th optical element 390 is an optical component located between the first semiconductor laser element 11 and the first optical element 310m. The 13th optical element 390 is a vertical mirror element with a reflective surface having a 45° angle relative to the laser emission direction of the semiconductor laser element. In this embodiment, although the reflective surface is a plane mirror, it could also be a concave mirror surface with a reflective type, like the 8th optical element 318f involved in the 5th variation of the 2nd embodiment. The concave mirror surface is, for example, a parabolic surface.

[0409] The plurality of 13th optical elements are optical elements that deflect the laser emitted by each of the plurality of semiconductor laser elements in a direction parallel to the surface of the bottom 130m (z direction) by 90° from the bottom 130m towards the frame 120m (ζ direction, x direction). Therefore, the first direction D1 of the first laser beam is deflected by 90°.

[0410] In this modified example, due to the provision of the 13th optical element 390, multiple semiconductor laser elements can be arranged on the bottom 130m via multiple bases 50. Therefore, the Joule heat generated by the multiple semiconductor laser elements is efficiently transferred to the bottom 130m, thereby enabling efficient heat dissipation.

[0411] Furthermore, the semiconductor laser module 100m of the light source module 1m according to the third embodiment can be replaced with a semiconductor laser module 100n. By configuring the first laser beam emitted from the semiconductor laser module 100n in a manner that aligns with the first direction D1 (ζ direction), second optical axis F1 direction (ξ direction), and third optical axis S1 direction (η direction) of the first laser beam emitted from the semiconductor laser module 100n, the operation of the plurality of lasers emitted from the semiconductor laser module 100n in the direction (ζ direction) from the bottom 130m toward the frame 120m is the same as that of the light source module 1m. In other words, even in this modified example, the same effect as in the third embodiment can be expected. Specifically, when manufacturing the semiconductor laser module 100n, the positions of the emitting points of the multiple semiconductor laser elements that determine the optical axis of the laser, the reflecting surfaces of the multiple 13th optical elements 390, and the positions of the multiple biconvex cylindrical lens structures in the lens array optical element 400 can be adjusted with high precision, even if they are not simultaneously fixed by high-precision adjustment. The travel and calibration of the multiple lasers can be adjusted with high precision by adjusting the positions of the multiple FAC lenses and SAC lenses. Therefore, the multiple lasers can be incident on the object (the end face of the optical fiber) with high combining efficiency.

[0412] (Second variation of the third embodiment) Figure 33 The diagram illustrates the configuration of a semiconductor laser module 100p within the light source module of the second variation of the third embodiment. More specifically, Figure 33 (a) is a view from the lens array optical element 400p side of the semiconductor laser module 100p. Figure 33 (b) is shown Figure 33 A cross-sectional view of the section plane on line bb in (a) shows the optical system.

[0413] In the semiconductor laser module 100p, except for the following two points, the remaining configuration is the same as that of the light source module 1n involved in the first modification of the third embodiment. Specifically, the two differences are: the plurality of semiconductor laser elements and the lens array optical element 400p are arranged in a triangular lattice shape, and the shapes of the reflective surfaces of the plurality of lenses provided in the lens array optical element 400p and the 13th optical element are different.

[0414] In this modified example, multiple semiconductor laser elements are arranged in a triangular lattice pattern. More specifically, the multiple semiconductor laser elements are arranged such that the positions of the vertices of the triangles in the triangular lattice pattern correspond to the positions of the triangles. Furthermore, the 8th optical element 318p and the 10th optical element 338p, respectively arranged on the emission side of the semiconductor laser elements, are reflectors, for example, concave reflector surfaces with the same parabolic surface as the 8th optical element 318f in the 5th modified example of the 2nd embodiment. Furthermore, the 9th optical element 319p and the 11th optical element 339p formed in the lens array optical element 400p are the same as the 9th optical element 319f in the 5th modified example of the 2nd embodiment, having a plano-convex lens structure. Therefore, the combination of the 8th optical element 318p and the 9th optical element 319p constitutes the 1st optical element 310p. The 1st optical element 310p is disposed at a position corresponding to each of the multiple semiconductor laser elements.

[0415] The optical axis A1 of the 8th optical element 318p and the 9th optical element 319p is configured to correspond to the position of the vertices of the triangular lattice. Thus, as... Figure 33 As shown in (a), the interfaces of the 9th optical element 319p and the 11th optical element 339p in their respective planar diagrams are formed as hexagons.

[0416] The first package 21p of the semiconductor laser module 100p has a bottom 130p and a frame 120p fixed to the bottom 130p. An anode extraction electrode 131p, serving as a plurality of lead pins, is formed on one sidewall of the frame 120p. A cathode extraction electrode 134p, also serving as a plurality of lead pins, is formed on the sidewall opposite to one sidewall of the frame 120p. The lead pins of the anode extraction electrode 131p and the cathode extraction electrode 134p are configured differently from each other. A first semiconductor laser element 11 and a second semiconductor laser element 12 are located on the anode extraction electrode 131p side of the first package 21p and are arranged in the direction in which the plurality of lead pins of the anode extraction electrode 131p are arranged.

[0417] The first laser beam emitted from the first semiconductor laser element 11 and the second laser beam emitted from the second semiconductor laser element 12 are emitted in alignment with the fast axis (the second optical axis F1 and the fifth optical axis F2) when they exit from the semiconductor laser module 100p. The third semiconductor laser element 13 is arranged relative to the first semiconductor laser element 11 in the direction of the third optical axis S1. A fourth semiconductor laser element 14 is disposed between the electrical connection between the first semiconductor laser element 11 and the third semiconductor laser element 13. Thus, in this modified example, since the multiple semiconductor laser elements are arranged in a triangular lattice shape, the mounting density of the semiconductor laser elements can be increased.

[0418] Furthermore, multiple semiconductor laser elements are electrically connected in series by multiple metal wires 190p. A first metal film and a second bonding member are provided on the semiconductor laser element side of the base 50. The multiple metal wires 190p are connected to the anode extraction electrode 131p, the first metal film of the base 50 holding the first semiconductor laser element 11, the substrate side surface of the first semiconductor laser element 11, the first metal film of the base 50 holding the fourth semiconductor laser element 14, the substrate side surface of the fourth semiconductor laser element 14, the first metal film of the base 50 holding the third semiconductor laser element 13, and the cathode extraction electrode 134p.

[0419] Furthermore, a semiconductor laser module 100p can be used instead of the semiconductor laser module 100m of the light source module 1m in the third embodiment.

[0420] (Fourth implementation) The fourth embodiment will be described below. In the fourth embodiment, the multiple semiconductor laser modules are configured in a two-dimensional manner, and the seventh optical element is composed of a diffraction grating and combines the multiple lasers in a wavelength-combining manner, which differs from the second embodiment. The following description focuses on the differences from the second embodiment, and the commonalities are omitted or simplified.

[0421] [constitute] First use Figure 34 as well as Figure 35A The configuration of the light source module according to the fourth embodiment will be described.

[0422] Figure 34 This is a perspective view showing the configuration of the light source module 1q. More specifically, Figure 34 (a) is a perspective view showing the entire composition of 1q. Figure 34 (b) is an enlarged perspective view of the plurality of semiconductor laser modules 100a and the like as described in the fourth embodiment.

[0423] Figure 35A This is a perspective view showing an example of the optical system of the light source module 1q. Additionally, in Figure 35A The dashed arrows in the image represent the action of a typical laser.

[0424] like Figure 34 as well as Figure 35A As shown, the light source module 1q includes: a housing 2q, multiple semiconductor laser modules 100a, multiple FAC lenses (e.g., a second optical element 320a and a fourth optical element 340a), multiple SAC lenses (e.g., a fifth optical element 350 and a sixth optical element 360), a first reflector 375q, a second reflector 376q, a third reflector 377q, a seventh optical element 370q serving as a diffraction grating, a fourteenth optical element 391 serving as an external resonator reflector, a twelfth optical element 380a serving as a condenser lens, and an optical fiber 4. Additionally... Figure 34 The second reflector 376q, the third reflector 377q, the seventh optical element 370q, the fourteenth optical element 391, and the twelfth optical element 380a, which serves as a condenser lens, are omitted.

[0425] In this embodiment, the plurality of FAC lenses (e.g., the second optical element 320a and the fourth optical element 340a), the plurality of SAC lenses (e.g., the fifth optical element 350 and the sixth optical element 360), the 12th optical element 380a serving as a condenser lens, and the optical fiber 4 have the same configuration as in the second embodiment. The plurality of semiconductor laser modules 100a, in addition to having semiconductor laser elements, also have the same configuration as in the second embodiment. The difference between this embodiment and the semiconductor laser element of the second embodiment is that the end-face coating film of the emission surface of the semiconductor laser element (e.g., the first semiconductor laser element 11) is formed with a non-reflective coating film. Therefore, in the semiconductor laser element of this embodiment, no optical resonant cavity is formed between the emission surface and the rear end surface.

[0426] Similarly, in this embodiment, for ease of identification, as an example of multiple semiconductor laser modules 100a, it is described as a first semiconductor laser module 101a and a second semiconductor laser module 102a.

[0427] Furthermore, in this embodiment, the wavelength of the laser emitted by each of the plurality of semiconductor laser modules 100a is different. In other words, the wavelength of the first laser beam emitted by the first semiconductor laser module 101a is different from the wavelength of the second laser beam emitted by the second semiconductor laser module 102a; for example, the wavelength of the first laser beam is shorter than the wavelength of the second laser beam.

[0428] Unlike the first and second embodiments, each of the plurality of semiconductor laser modules 100a is arranged along an arc. Furthermore, the plurality of semiconductor laser modules 100a are not substrates with varying heights as in the multi-level substrate 5 of the first embodiment, but are configured to be on the same plane on the substrate. Therefore, in this embodiment, the directions in which the first laser beam and the second laser beam are emitted from the first semiconductor laser module 101a and the second semiconductor laser module 102a are not the same. That is, the first direction D1 is not the same as the second direction D2, and the third optical axis S1 is not the same as the sixth optical axis S2. Moreover, the first direction D1 and the second direction D2 exist in the same plane parallel to the third optical axis S1 and the sixth optical axis S2.

[0429] The outer casing 2q corresponds to the outer casing 2 according to the first embodiment. Multiple semiconductor laser modules 100a, etc., are disposed within the outer casing 2q and sealed by covers (not shown). The outer casing 2q has a base 6q, sidewalls 3q, and two covers (not shown). The base 6q has a first surface 61q and a second surface 62q. The first surface 61q is a flat plane in the shape of a plate, and the second surface 62q is a plane on the opposite side of the first surface 61q. The sidewalls 3q are arranged to be perpendicular to both the first surface 61q and the second surface 62q, surrounding the center of the base 6q. The two covers (not shown) are respectively disposed above and below the sidewalls 3q formed by sandwiching the base 6q. That is, two spaces are formed in the outer casing 2q by the base 6q, the sidewalls 3q, and the two covers (not shown). Furthermore, the base 6q has an opening 8q near its central portion. The two spaces of the outer casing 2q are spatially connected through the opening 8q.

[0430] Furthermore, multiple electrical terminals, such as anode lead pin 931 and cathode lead pin 934, are formed on the sidewall 3q of the first surface 61q of the substrate 6q to provide electrical connections to the outside and inside. Additionally, an optical fiber mounting terminal for holding the optical fiber 4 is formed on the sidewall 3q of the second surface 62q of the substrate 6q, enabling the laser to be extracted from the inside of the housing 2q to the outside.

[0431] The components formed in the light source module 1q are respectively allocated to the two spaces mentioned above. Specifically, multiple semiconductor laser modules 100a, multiple FAC lenses, multiple SAC lenses, a first reflector 375q, and multiple electrical terminals are arranged in the space on one side of the first surface 61q of the substrate 6q.

[0432] Furthermore, the second reflector 376q, the third reflector 377q, the seventh optical element 370q (which serves as a diffraction grating), the fourteenth optical element 391, the twelfth optical element 380a, and the optical fiber 4 are disposed in the space on one side of the second surface 62q of the substrate 6q. Thus, the multiple electrical terminals fixed to the sidewall 3q and the components other than the optical fiber 4 are fixed to the substrate 6q in their respective spaces.

[0433] Furthermore, near the plurality of semiconductor laser modules 100a, an anode wiring block 291 and a cathode wiring block 294 for supplying power to the semiconductor laser modules 100a are fixed to the substrate 6q. The anode wiring block 291 and the cathode wiring block 294 are constructed by forming metal films such as Ni and Au on the surface of an insulating block such as alumina ceramic. Regarding the anode extraction electrodes and cathode extraction electrodes of the 18 semiconductor laser modules 100a arranged in an arc, adjacent cathode extraction electrodes and anode extraction electrodes are connected in series by metal wires or the like. Thus, the anode extraction electrodes and cathode extraction electrodes of the semiconductor laser modules 100a at both ends are electrically connected to the anode wiring block 291 and the cathode wiring block 294. The anode wiring block 291 and the cathode wiring block 294 are electrically connected to the anode lead pin 931 and the cathode lead pin 934 of the housing 2q, respectively, by metal wires. For example, the anode extraction electrode 131 of the first semiconductor laser module 101a is electrically connected to the anode wiring block 291 by a metal wire 194 such as an aluminum wire. The cathode extraction electrode 134 of the first semiconductor laser module 101a is electrically connected to the anode extraction electrode 1312 of the adjacent second semiconductor laser module 102a via a metal wire 193. The cathode extraction electrode 1342 of the second semiconductor laser module 102a is electrically connected to the anode extraction electrode of the adjacent third semiconductor laser module via a metal wire 1931. In this way, multiple internal semiconductor laser modules can be powered in the light source module 1q using the anode lead pin 931 and the cathode lead pin 934.

[0434] Each of the first to third reflectors 375q, 376q, and 377q reflects the laser emitted from each of the multiple semiconductor laser modules 100a using multiple reflecting surfaces. The first to third reflectors 375q, 376q, and 377q combine the multiple laser beams as a function for emitting the laser from the optical fiber 4; this is not a necessary component. However, because the first to third reflectors 375q, 376q, and 377q reflect or return the optical paths of the multiple lasers, or change their direction of travel, they are configured to minimize and thin the light source module 1q.

[0435] In this embodiment, the seventh optical element 370q is a diffraction grating, which is incident on lasers emitted from each of the plurality of semiconductor laser modules 100a, and the lasers are combined by wavelength combining so that they are emitted as lasers traveling along the same optical axis.

[0436] The 14th optical element 391 is a half-mirror that reflects a portion of the laser light emitted from each of the plurality of semiconductor laser modules 100a, while allowing the remainder to pass through. The laser light reflected by the 14th optical element 391 is fed back to the light-emitting point of the semiconductor laser element of the semiconductor laser module 100a from which the laser light was emitted. For example, a portion of the first laser beam incident on the 14th optical element 391 exits through the 14th optical element 391, passes through the 5th optical element 350 and the 2nd optical element 320a, and enters the 1st semiconductor laser element 11. Therefore, the 14th optical element 391 functions as a mirror for resonance on the emission side of each of the plurality of semiconductor laser elements. In this embodiment, the 14th optical element 391 is disposed on the optical axis between the 7th optical element 370q and the 12th optical element 380a.

[0437] The 12th optical element 380a is a focusing lens that focuses the laser emitted from the 14th optical element 391 onto the optical fiber 4.

[0438] Use here Figure 35B The configuration of a first semiconductor laser module 101a, which is an example of a plurality of semiconductor laser modules 100a, will be described. Furthermore, the configurations of the semiconductor laser modules other than the first semiconductor laser module 101a among the plurality of semiconductor laser modules 100a are the same as those of the first semiconductor laser module 101a. In this embodiment, the semiconductor laser module 100a fixed to the module support member 163 is also used as a semiconductor laser module unit 1000.

[0439] Figure 35BThis is a perspective view showing the configuration surrounding the first semiconductor laser module 101a. The module support member 163 is in the shape of a rectangular plate. Furthermore, the module support member 163 can be made of a component with high thermal conductivity to efficiently dissipate the heat generated by the first semiconductor laser module 101a to the housing 2q. The module support member 163 is, for example, made of a Cu plate with Ni or Au plated on its surface. Two openings for fixing screws are formed along the long axis of the rectangular plate shape of the module support member 163. The first semiconductor laser module 101a is fixed to a predetermined position on the module support member 163 by a bonding member such as solder. By using a semiconductor laser module unit 1000 composed of a semiconductor laser module 100a fixed to the module support member 163, the semiconductor laser module unit 1000 can be easily fixed to a holding member such as a housing using screws.

[0440] Furthermore, the second optical element 320a and the fifth optical element 350 are disposed at a predetermined position on one side of the module support member 163, and are located on the laser emission side of the semiconductor laser module 100a. At this time, the second optical element 320a is supported by the optical support member 164, and the position of the second optical element 320a is fixed.

[0441] [The action of the laser] Further utilization Figure 36 The laser emitted from each of the multiple semiconductor laser modules 100a is described.

[0442] Figure 36 This is a schematic diagram showing the optical system of the light source module 1q. Additionally, in... Figure 36 In the diagram, the optical axes (optical axis A1 and optical axis A2, etc.) of each of the multiple lasers are represented by dashed arrows.

[0443] like Figure 36 As shown, lasers with predetermined wavelengths are emitted from multiple semiconductor laser modules 100a arranged in an arc shape and travel towards a first reflector 375q. The first reflector 375q reflects the multiple lasers calibrated by multiple FAC lenses and multiple SAC lenses. The second reflector 376q reflects the multiple lasers reflected by the first reflector 375q.

[0444] The seventh optical element 370q combines the multiple laser beams reflected by the second reflector 376q and emits them towards the third reflector 377q. The third reflector 377q reflects the multiple laser beams emitted from the seventh optical element 370q. The fourteenth optical element 391 reflects a portion of the multiple laser beams reflected by the third reflector 377q, allowing the remainder to pass through. The twelfth optical element 380a focuses the multiple laser beams emitted from the fourteenth optical element 391 onto the incident end face of the optical fiber 4. That is, the twelfth optical element 380a focuses the remaining portion of the laser beams that have passed through the fourteenth optical element 391 onto the incident end face of the optical fiber 4. The optical fiber 4 guides the laser beams incident on the incident end face to the outside of the light source module 1q.

[0445] The operation of the 7th optical element 370q, which serves as a diffraction grating, and the 14th optical element 391, which serves as a semi-reflective mirror, will be explained in more detail here.

[0446] First, the 14th optical element 391 will be described. A portion of each of the multiple lasers reflected by the 14th optical element 391 returns to the multiple semiconductor laser modules 100a via the 3rd reflector 377q, the 7th optical element 370q, the 2nd reflector 376q, and the 1st reflector 375q, respectively.

[0447] At this time, an optical resonant cavity is formed between the rear end face of each of the multiple semiconductor laser elements in the multiple semiconductor laser modules 100a and the 14th optical element 391. That is, in this embodiment, the multiple semiconductor laser elements in the multiple semiconductor laser modules 100a are external cavity lasers (ECLDs).

[0448] At this time, the lasers emitted from each of the multiple semiconductor laser modules 100a are incident on the seventh optical element 370q at different incident angles. Therefore, the incident angle α relative to the laser incident on the seventh optical element 370q is... i (For example, in the first semiconductor laser module 101a, the incident angle α) i (1) If the diffracted light emitted from the 7th optical element 370q and directed toward the 14th optical element 391, i.e. the laser beam, has an emission angle α... o If not set to a specified angle, it cannot be used as an external resonant laser to oscillate.

[0449] Additionally, the exit angle α o The incident angle α of multiple lasers i The wavelength of the diffraction grating of the 7th optical element 370q is determined by the diffraction grating spacing and the wavelength of the incident laser.

[0450] Therefore, after determining the laser oscillation wavelength of the semiconductor laser element constituting the external resonant laser, the position of the semiconductor laser module 100a, the laser emission direction, the position and orientation of the 7th optical element 370q, the diffraction grating spacing, and the position and orientation of the 14th optical element 391 are set to predetermined values, thus enabling it to oscillate as an external resonant laser.

[0451] Specifically, for example, the above settings are made for the first semiconductor laser module 101a, thereby adjusting the incident angle α of the laser from the first semiconductor laser module 101a. i (1) and the angle of departure α o The corresponding oscillation wavelength is determined, and the laser light is emitted through the 14th optical element 391 and travels toward the 12th optical element 380a. In addition, in the diffraction grating of the 7th optical element 370q, the diffraction grating depth and shape are optimized in such a way that the proportion of the diffracted light, i.e., the laser light, emitted through the 7th optical element 370q and traveling toward the 14th optical element 391 is much larger than the proportion of diffracted light emitted in other directions.

[0452] In the light source module 1q, by determining the configuration and oscillation wavelength range for all of the multiple semiconductor laser modules 100a to meet the aforementioned conditions, each of the multiple semiconductor laser modules 100a can function as an ECLD with a determined oscillation wavelength, exiting from the 7th optical element 370q at the same exit angle α. o Lasers are emitted from the same optical axis.

[0453] In summary, the light source module 1q involved in this embodiment is a module that can combine the wavelengths of lasers emitted from each of the multiple semiconductor laser modules 100a and emit them through an optical system.

[0454] [Methods for adjusting the position of FAC and SAC lenses] Next, regarding the manufacturing method of the light source module 1q in this embodiment, focusing on the method for adjusting the positions of the FAC lens and the SAC lens, using... Figure 34 , Figures 37A-37C The following description will be provided. Here, the second optical element 320a, which is an example of a plurality of FAC lenses, and the fifth optical element 350, which is an example of a plurality of SAC lenses, will be described.

[0455] Figure 37A This is a perspective view showing the configuration of the first semiconductor laser module 101a according to the fourth embodiment. Figure 37B This is a perspective view showing the semiconductor laser module unit 1000 according to the fourth embodiment being fixed. Figure 37CThis is a perspective view used to illustrate the method for adjusting the position of the second optical element 320a and the fifth optical element 350 according to the fourth embodiment.

[0456] Firstly, as Figure 37A As shown, a first semiconductor laser module 101a is fixed at a predetermined position on one surface of the module support member 163 to manufacture a semiconductor laser module unit 1000. At this time, a solder film such as SnAgCu is sandwiched between the module support member 163 and the first semiconductor laser module 101a, and is fixed by applying pressure and heating.

[0457] Next, the anode wiring block 291 and the cathode wiring block 294 are fixed to the substrate 6q. Then, multiple semiconductor laser module units 1000 are fixed to predetermined positions on the housing 2q. At this time, multiple screw holes are formed at predetermined positions on the first surface 61q of the substrate 6q, such as... Figure 37B As shown, the semiconductor laser module unit 1000 can be fixed to the substrate 6q by screws 166. Therefore, multiple first semiconductor laser modules 101a can be easily fixed to the housing 2q. Next, the multiple semiconductor laser modules 100a, the anode wiring block 291, the cathode wiring block 294, the anode extraction electrode 131, and the cathode extraction electrode 134 are electrically connected using metal wires.

[0458] Next, the 12th optical element 380a, the 14th optical element 391, the 3rd reflector 377q, the 7th optical element 370q, and the 2nd reflector 376q are fixed to the second surface 62q of the substrate 6q using an ultraviolet-cured adhesive or the like. Furthermore, the 1st reflector 375q is fixed to the first surface 61q of the substrate 6q using an ultraviolet-cured adhesive or the like. Next, the optical fiber 4 is installed in a manner that allows monitoring of the amount of laser light combined with the optical fiber 4 when laser light is emitted from the multiple semiconductor laser modules 100a.

[0459] Next, multiple FAC lenses and multiple SAC lenses are positioned at predetermined locations on the module support component 163, and fixed while adjusting their positions relative to the multiple semiconductor laser modules 100a.

[0460] Specifically, such as Figure 37CAs shown, the optical support member 164 is first fixed at a predetermined position on one surface of the module support member 163. Next, the second optical element 320a and the fifth optical element 350 are arranged on one surface of the module support member 163. At this time, a UV-curable adhesive is applied between the second optical element 320a and the optical support member 164, and between the fifth optical element 350 and the module support member 163. Power is then supplied to the semiconductor laser element to emit laser light. While monitoring the amount of light emitted from the optical fiber 4, the position of the second optical element 320a is slightly moved in a direction parallel to the optical axis A1 (direction +A or direction -A) or in a direction parallel to the second optical axis F1 (direction +F or direction -F), and the position of the fifth optical element 350 is slightly moved in a direction parallel to the optical axis A1 (direction +A or direction -A) or in a direction parallel to the third optical axis S1 (direction +S, -S). Therefore, ultraviolet light is irradiated at the optimal position to fix the second optical element 320a, the optical support member 164, and the fifth optical element 350 in the optimal position. That is, active calibration is performed in the same way as in the first embodiment.

[0461] Furthermore, in this embodiment, in the semiconductor laser module 100a, the anode extraction electrode 131 and the cathode extraction electrode 134 are formed on the upper surface side (i.e., the side where the cover is provided). Therefore, the semiconductor laser module 100a can be operated separately using probes or the like, thereby enabling efficient active calibration.

[0462] [Effects, etc.] Furthermore, for example, in the light source module 1q involved in this embodiment, the seventh optical element 370q is a diffraction grating.

[0463] Accordingly, a light source module 1q was realized that can combine the laser beams emitted from each of the multiple semiconductor laser modules 100a with higher efficiency.

[0464] As described above, in the light source module 1q of this embodiment, the wavelength of the first laser beam is different from the wavelength of the second laser beam.

[0465] Accordingly, the light source module 1q of this embodiment can combine lasers of different wavelengths emitted from each of the plurality of semiconductor laser modules 100a through an optical system and emit the combined laser beam. That is, a light source module 1q capable of wavelength combining is realized.

[0466] Furthermore, for example, the light source module 1q according to this embodiment has a 14th optical element 391, which is incident on a first laser beam that passes through the 2nd optical element 320a and the 5th optical element 350. A portion of the first laser beam incident on the 14th optical element 391 exits from the 14th optical element 391, passes through the 5th optical element 350 and the 2nd optical element 320a, and is incident on the 1st semiconductor laser element 11.

[0467] Accordingly, the 14th optical element 391 functions as a mirror for resonance on the emission side of each of the plurality of semiconductor laser elements. Therefore, an optical resonant cavity can be formed between the rear end face of each of the plurality of semiconductor laser elements in the plurality of semiconductor laser modules 100a and the 14th optical element 391.

[0468] Furthermore, for example, in the light source module 1q according to this embodiment, the 14th optical element 391 is disposed on the optical axis between the 7th optical element 370q and the 12th optical element 380a.

[0469] Accordingly, resonance can be generated more efficiently between the rear end facet of each of the plurality of semiconductor laser elements and the 14th optical element 391. Furthermore, by arranging the 7th optical element 370q between the rear end facet of each of the plurality of semiconductor laser elements and the 14th optical element 391, the oscillation wavelength of each semiconductor laser element can be made to an appropriate wavelength, allowing wavelength combining of the incident and emitted beams from the 7th optical element 370q. Therefore, wavelength combining can be performed more effectively at the 7th optical element 370q.

[0470] The first and second variations of the fourth embodiment will be described below. The description will focus on the differences from the fourth embodiment, and the description of the commonalities will be omitted or simplified.

[0471] (First variation of the fourth embodiment) Figure 38 This is a perspective view showing the configuration around the first semiconductor laser module 101a according to the first variation of the fourth embodiment.

[0472] In the light source module according to the first variation of the fourth embodiment, the main configuration is the same as that of the light source module 1q according to the fourth embodiment, except for the following point. Specifically, the difference is that the fifth optical element 350 is disposed between the second optical element 320a and the ninth optical element 319a.

[0473] Furthermore, the second optical element 320a is fixed to two optical element holding portions 165 protruding from the module support member 163 by adhesive 167. The two optical element holding portions 165 are configured to clamp the second optical element 320a in the direction of the third optical axis S1. With this configuration, the second optical element 320a can move slightly in the direction of the optical axis A1 (+A, -A) and the direction of the second optical axis F1 (+F, -F) before the adhesive 167 cures. That is, it is easy to adjust the position of the second optical element 320a in the direction of the optical axis A1 and the direction of the second optical axis F1.

[0474] Furthermore, with this configuration, even in this modified example, a light source module capable of wavelength beam combining can be realized in the same way as in the fourth embodiment.

[0475] In addition, similar to the fourth embodiment, the second optical element 320a is disposed between the fifth optical element 350 and the ninth optical element 319a, and the optical element holding part 165 may also be disposed corresponding to the second optical element 320a.

[0476] (Second variation of the fourth embodiment) Figure 39 This is a schematic diagram showing the optical system of the light source module 1r according to the second variation of the fourth embodiment. Figure 40 This is a perspective view showing the configuration around the first semiconductor laser module 101a according to the second variation of the fourth embodiment.

[0477] Except for the following three points, the configuration of the light source module 1r is the same as that of the light source module 1q in the fourth embodiment. Specifically, the three differences are: the laser beam splitter 210, which serves as a wavelength selection diffraction grating between the fifth optical element 350 and the first reflector 375q, is configured correspondingly to each semiconductor laser module 100a; the 14th optical element 391 is configured correspondingly to the laser beam splitter 210; and the 7th optical element 370r is a reflective diffraction grating.

[0478] In this modified example, each of the plurality of laser beam-splitting elements 210 is disposed between each of the plurality of SAC lenses and the first reflecting mirror 375q. Thus, the 14th optical element 391, which functions as a mirror for resonance on the emission side of the semiconductor laser element, is disposed near the laser beam-splitting element 210 in a manner opposite to the laser beam-splitting element 210. Further as... Figure 40As shown, the laser beam splitter 210 and the 14th optical element 391 are fixed to the module support member 163 on which the semiconductor laser module 100a is mounted, forming the semiconductor laser module unit 1000. At this time, the actuator 211, which serves as a rotary motor, is fixed to the module support member 163, and the laser beam splitter 210 is fixed to the rotation axis of the actuator 211.

[0479] Multiple laser beam splitters 210 are optical components that split the first laser beam along the first optical axis (optical axis A1). For example, the multiple laser beam splitters 210 are diffraction gratings having a predetermined diffraction grating spacing. Figure 40 As shown, a portion of the first laser beam L15 incident on a laser beam splitter 210, according to the diffraction grating spacing and the incident angle of the first laser beam L15, travels as diffracted light L151 towards the 14th optical element 391. That is, the first laser beam split by the laser beam splitter 210 is incident on the 14th optical element 391. The laser reflected by the 14th optical element 391 is fed back to the light-emitting point of the semiconductor laser element of the semiconductor laser module 100a from which the laser beam is emitted.

[0480] In this modified example, multiple semiconductor laser elements form an optical resonant cavity between the rear end face of each of the multiple 14th optical elements 391. In this modified example, the multiple semiconductor laser elements and the multiple 14th optical elements 391 constitute an ECLD.

[0481] The wavelength of the laser emitted from the aforementioned semiconductor laser element is determined by the diffraction grating spacing of the laser beam splitter 210 and the incident angle of the laser. Furthermore, the laser beam splitter 210 is fixed to the rotation axis of the actuator 211 that rotates the laser beam splitter 210. Therefore, by rotating the multiple actuators 211 at predetermined angles, the incident angles of the multiple laser beams change, allowing adjustment of the oscillation wavelength of the laser emitted from the multiple semiconductor laser modules 100a.

[0482] As described above, most of the laser emitted from the semiconductor laser module 100a, whose oscillation wavelength is determined, passes through the laser beam splitter 210 and is emitted towards the first reflector 375q. It is then reflected by the second reflector 376q and focused at a predetermined position on the seventh optical element 370r.

[0483] The seventh optical element 370r is an optical element that reflects and combines the laser beams emitted from each of the plurality of semiconductor laser modules 100a. Even with a reflective diffraction grating, as described in the fourth embodiment, the incident angle β of the laser incident on the seventh optical element 370r can be... i (For example, in the first semiconductor laser module 101a, the incident angle β)i (1)), the emission angle β of the laser as the emitted diffracted light o The wavelength of the incident laser is determined by the incident angle of the laser, the spacing of the diffraction grating, and the wavelength. Therefore, in order to combine the laser beam emitted from the 7th optical element 370r according to the position of the semiconductor laser module 100a and the direction of the emitted laser, that is, to make the emission direction of each of the multiple lasers consistent, it is necessary to determine the wavelength of the incident laser.

[0484] In this modified example, the wavelength of the emitted laser can be predetermined in the semiconductor laser module 100a or semiconductor laser module unit 1000. Specifically, for example, by driving multiple actuators 211 to rotate, the wavelengths of the multiple lasers passing through the multiple laser beam splitting elements 210 can be controlled. Therefore, the incident angle βi toward the seventh optical element 370r is determined based on the configuration of each of the multiple semiconductor laser modules 100a, and by controlling the wavelength of each of the multiple lasers, the emission directions of each of the multiple lasers can be made consistent.

[0485] Furthermore, in the above configuration, the multiple FAC lenses and multiple SAC lenses are located outside the multiple semiconductor laser modules 100a. Therefore, the wavelength can be adjusted simultaneously with the direction of travel of the multiple lasers emitted from the multiple semiconductor laser modules 100a. Thus, even if the multiple FAC lenses, multiple SAC lenses, multiple laser beam splitting elements 210, and the 14th optical element 391, which adjust the direction of travel and wavelength of the emitted lasers, are fixed using, for example, a resin such as an ultraviolet-curable adhesive, the semiconductor laser elements are hermetically sealed inside the semiconductor laser module 100a, thereby suppressing deterioration caused by the adhesion of foreign matter.

[0486] In summary, with this configuration, even in this modified example, a light source module 1r capable of wavelength beam combining can be realized in the same way as in the fourth embodiment.

[0487] (Fifth Embodiment) The fifth embodiment will be described below. The description will focus on the differences from the second embodiment, and the description of the commonalities will be omitted or simplified.

[0488] Figure 41 This is a perspective view showing the configuration of the light source module 1s according to the fifth embodiment.

[0489] In addition Figure 41 For the sake of simplicity, the border 171 and other details described in the second embodiment are not included in this description. Figure 41 The semiconductor laser module 21s is represented by a dashed line.

[0490] The light source module 1s is identical to the light source module 1a in the second embodiment, except for the following point. Specifically, the difference is that the multiple semiconductor laser elements are hermetically sealed by the semiconductor laser module 21s.

[0491] Furthermore, in this embodiment, a multi-level substrate 5b is provided on the substrate 6.

[0492] The multi-level substrate 5b includes a seventh optical element 370 serving as multiple mirrors, multiple FAC lenses (e.g., the second optical element 320a and the fourth optical element 340a) having concave cylindrical surfaces, and multiple SAC lenses (e.g., the fifth optical element 350 and the sixth optical element 360) having convex cylindrical surfaces.

[0493] The multi-level substrate 5a is hermetically sealed within the semiconductor laser module 21s. On each level of the multi-level substrate 5a, a plurality of semiconductor laser elements (e.g., the first semiconductor laser element 11 and the second semiconductor laser element 12) and an eighth optical element 318a and a tenth optical element 338a are disposed.

[0494] Furthermore, the 9th optical element 319a, which is part of the 1st optical element 310a, and the 11th optical element 339a, which is part of the 3rd optical element 330a, constitute the light-transmitting window of the semiconductor laser module 21s.

[0495] In this embodiment, the first semiconductor laser element 11, the second semiconductor laser element 12, the ninth optical element 319a (which is part of the first optical element 310a), and the eleventh optical element 339a (which is part of the third optical element 330a) are hermetically sealed by the semiconductor laser module 21s, the ninth optical element 319a (which is part of the first optical element 310a), and the eleventh optical element 339a (which is part of the third optical element 330a).

[0496] Furthermore, with this configuration, similar to the first embodiment, the degradation of the first semiconductor laser element 11 and the second semiconductor laser element 12 can be suppressed, and a small and compact light source module 1s with high laser binding efficiency in the seventh optical element 370 can be realized.

[0497] (First variation of the fifth embodiment) Next, a first variation of the fifth embodiment will be described. Figure 42 This is a perspective view showing the configuration of the light source module 1t.

[0498] In the light source module 1t, its configuration is the same as that of the light source module 1s according to the fifth embodiment, except for the following point. Specifically, the difference is that the second optical element 320 and the fourth optical element 340, which are multiple FAC lenses, are lenses with convex cylindrical surfaces.

[0499] Even in this configuration, the degradation of the first semiconductor laser element 11 and the second semiconductor laser element 12 can be suppressed, just like in the fifth embodiment, and a small and compact light source module 1t with high laser integration efficiency for the target object can be realized.

[0500] (Sixth Embodiment) Next, the sixth embodiment will be described.

[0501] [constitute] use Figure 43 The configuration of the first semiconductor laser module in the light source module according to the sixth embodiment will be described.

[0502] Figure 43 This is a perspective view showing the configuration of the first semiconductor laser module 101u according to the sixth embodiment. Additionally, in Figure 43 The laser's optical axis is represented by a dashed line.

[0503] In the light source module according to the sixth embodiment, its structure is the same as that of the light source module according to the first modification of the second embodiment, except for the following point. Specifically, the difference is that the plurality of semiconductor laser elements are hermetically sealed by the first package 21u of the first semiconductor laser module 101u.

[0504] like Figure 43 As shown, as an example of multiple semiconductor laser elements, the first semiconductor laser element 11, the second semiconductor laser element 12, and the third semiconductor laser element 13 are hermetically sealed by a first package 21u, a light-transmitting window 317 formed integrally, a ninth optical element 319b and an eleventh optical element 339b, and a cover member (not shown). The multiple semiconductor laser elements are arranged at predetermined intervals in a direction perpendicular to the direction of laser emission.

[0505] In the direction in which the first, second, and third laser beams irradiate from the first, second, and third semiconductor laser elements 11, 12, and 13, an eighth optical element 318a and a ninth optical element 319b, which are part of the first optical element 310b, are provided. Furthermore, in this embodiment, the light-transmitting window 317, the ninth optical element 319b, and the eleventh optical element 339b are formed as a single unit, and the eighth optical element 318a and the tenth optical element 338a are formed as a single unit.

[0506] For example, in the fifth embodiment described above, the first optical element 310a is an optical component corresponding to the first semiconductor laser element 11, and the third optical element 330a is an optical component corresponding to the second semiconductor laser element 12. However, in this embodiment, the first optical element 310b and the third optical element 330b, which are formed as a single unit, are optical components corresponding to the first semiconductor laser element 11 and the second semiconductor laser element 12. Furthermore, the first optical element 310b and the third optical element 330b, which are formed as a single unit, are optical components whose optical power on the second optical axis F1 is greater than that on the third optical axis S1. As an example, the eighth optical element 318b and the tenth optical element 338b, which constitute the first optical element 310b and are formed as a single unit, are cylindrical lenses having optical functional axes and non-optical functional axes. More specifically, the 8th optical element 318b and the 10th optical element 338b, which are formed as a single unit, are cylindrical lenses in which the length of the 8th optical element 318a in the first modification of the second embodiment along its non-optical functional axis is longer than the spacing between the plurality of semiconductor laser elements. Furthermore, the 9th optical element 319b and the 11th optical element 339b, which are also formed as a single unit, are cylindrical lenses having both optical and non-optical functional axes. More specifically, the 9th optical element 319b and the 11th optical element 339b, which are formed as a single unit, are cylindrical lenses in which the length of the 9th optical element 319a in the first modification of the second embodiment along its non-optical functional axis is longer than the spacing between the plurality of semiconductor laser elements. With this configuration, the first semiconductor laser module 101u having a plurality of semiconductor laser elements can be easily realized.

[0507] In this embodiment, the first semiconductor laser element 11, the second semiconductor laser element 12, and the third semiconductor laser element 13 are formed separately, and these semiconductor laser elements are individually mounted on a base 50, forming a so-called hybrid laser array element. Thus, the second optical axis F1 of the first laser beam L11 emitted from the first semiconductor laser element 11 and the fifth optical axis F2 of the second laser beam L21 emitted from the second semiconductor laser element 12 are configured to be parallel to the optical functional axes of the eighth optical element 318b and the tenth optical element 338b. Furthermore, the first divergence angle of the first laser beam L11 decreases in the direction of the second optical axis F1 via the first optical element 310b. Similarly, the fourth divergence angle of the second laser beam L21 decreases in the direction of the fifth optical axis F2. However, in this case, the position of the emitting point of the semiconductor laser element and the emission direction of the laser depend on the mounting accuracy on the base 50. For example, if the mounting accuracy on the base 50 is inconsistent, the position of the emitting point of the semiconductor laser element will also be different. Therefore, it is difficult to ensure that the emission direction of the laser emitted from each of multiple semiconductor laser elements is completely aligned with a predetermined direction. Thus, to ensure that the emission direction of the laser emitted from each of the multiple semiconductor laser elements is consistent, the lasers need to be adjusted individually.

[0508] In the light source module employing the first semiconductor laser module 101u, multiple FAC lenses (e.g., the second optical element 320a and the fourth optical element 340a) and multiple SAC lenses (e.g., the fifth optical element 350 and the sixth optical element 360) are positioned externally to the first semiconductor laser module 101u, and in the direction in which the laser beam is emitted from the first semiconductor laser module 101u. Even in this case, the positions of the multiple FAC lenses and the multiple SAC lenses can be easily adjusted. Therefore, since the divergence angle and travel direction of the first, second, and third laser beams can be adjusted separately, the laser beams can be incident on the target object with high combining efficiency.

[0509] In this embodiment, even when the hybrid laser array elements are configured in the first package 21u, electrical wiring can be easily performed. Specifically, a first metal film 137, a second metal film 138, a third metal film 1381, and a fourth metal film 1382, which are insulated from each other, are formed on the base 50. The first semiconductor laser element 11 is mounted on the first metal film 137 via a bonding member, the second semiconductor laser element 12 is mounted on the second metal film 138 via a bonding member, and the third semiconductor laser element 13 is mounted on the third metal film 1381 via a bonding member. Multiple semiconductor laser elements are then connected in series to each other via metal wires 190, 1901, 1902, 191, and 192, and multiple metal wires 190p connect the anode electrode 132 and the cathode electrode 135. With this configuration, power can be supplied to the hermetically sealed multiple semiconductor laser elements using the externally located anode extraction electrode 131 and cathode extraction electrode 134.

[0510] [Manufacturing Method of Semiconductor Laser Modules] Here, utilizing Figure 44 The manufacturing method of the first semiconductor laser module 101u is described.

[0511] Figure 44 This is a schematic diagram illustrating a method for manufacturing the first semiconductor laser module 101u according to the sixth embodiment.

[0512] First, a first semiconductor laser element 11, a second semiconductor laser element 12, and a third semiconductor laser element 13 are mounted on top of the base 50 and wired using metal wires. Next, the base 50, on which the first semiconductor laser element 11, the second semiconductor laser element 12, and the third semiconductor laser element 13 are mounted, is placed inside a first package 21u.

[0513] Next, the eighth optical element 318a is fixed at a predetermined height and distance relative to the first semiconductor laser element 11, the second semiconductor laser element 12, and the third semiconductor laser element 13 using the first support member 161. Then, the ninth optical element 319b is fixed to cover the opening 170 of a first package 21u. The base 50, the anode electrode 132, and the cathode electrode 135 are then connected via metal wires (not shown) and sealed with a cover member (not shown).

[0514] With this configuration and manufacturing method, the first semiconductor laser element 11, the second semiconductor laser element 12, and the third semiconductor laser element 13 are hermetically sealed within a first package 21u.

[0515] [Effects, etc.] As described above, in the light source module of this embodiment, the first optical element 310b and the third optical element 330b are formed as a single unit.

[0516] Accordingly, the number of components constituting the first semiconductor laser module 101u can be reduced.

[0517] Furthermore, for example, in the light source module according to this embodiment, the first semiconductor laser element 11 and the second semiconductor laser element 12 are formed separately.

[0518] This embodiment achieves a hybrid laser array element. Even in this case, the positions of multiple FAC lenses (e.g., the second optical element 320a and the fourth optical element 340a) and multiple SAC lenses (e.g., the fifth optical element 350 and the sixth optical element 360) can be easily adjusted. Therefore, the first, second, and third laser beams are incident on the target object with high combining efficiency.

[0519] (Seventh Embodiment) Next, the seventh embodiment will be described.

[0520] Figure 45 This is a perspective view showing the configuration of the first semiconductor laser module 101v according to the seventh embodiment.

[0521] The first semiconductor laser module 101v is identical in configuration to the light source module described in the second variation of the second embodiment, except for the following two points. Specifically, the two differences are: the 9th optical element 319v and the 11th optical element 339v, which are formed as a single unit, employ lens array optical elements, and the semiconductor laser array element 10v, which constitutes the first semiconductor laser element 11 and the second semiconductor laser element 12, is formed on the same semiconductor substrate.

[0522] The semiconductor laser array element 10v has multiple optical waveguides 61 formed on a common semiconductor substrate. Each optical waveguide 61 corresponds to a separate semiconductor laser element. For example... Figure 45As shown, the semiconductor laser array element 10v, for example, has three optical waveguides 61 arranged in a strip shape. The three optical waveguides 61 correspond to a first semiconductor laser element 11, a second semiconductor laser element 12, and a third semiconductor laser element 13, respectively emitting laser light. Since multiple optical waveguides 61 are formed on a common semiconductor substrate, the spacing between the optical waveguides 61 can be narrowed (e.g., from 100 μm to 1000 μm), thereby increasing the laser beam density. Furthermore, since multiple optical waveguides 61 are formed on a common semiconductor substrate by photolithography or the like, the spacing between the multiple optical waveguides 61 formed on the common semiconductor substrate can be correctly kept consistent, and the emission directions of the multiple lasers formed on the common semiconductor substrate can be correctly kept consistent.

[0523] In this embodiment, the 9th optical element 319v and the 11th optical element 339v are formed as one unit, and the 8th optical element 318a and the 10th optical element 338a are formed as one unit. Similarly, the 2nd optical element 320a and the 4th optical element 340a are formed as one unit, and the 5th optical element 350v and the 6th optical element 360v are formed as one unit.

[0524] Therefore, the first optical element 310v and the third optical element 330v are configured to correspond to the plurality of lasers emitted from the first semiconductor laser element 11, the second semiconductor laser element 12, and the third semiconductor laser element 13. In other words, the first optical element 310v and the third optical element 330v are integrally formed to correspond to the first semiconductor laser element 11 and the second semiconductor laser element 12. Similarly, the second optical element 320a and the fourth optical element 340a, and the fifth optical element 350v and the sixth optical element 360v, which are integrally formed, are used in the first semiconductor laser element 11 and the second semiconductor laser element 12.

[0525] The second optical element 320a and the fourth optical element 340a, which are formed as a single unit, have the same configuration as the second optical element 320a in the second embodiment.

[0526] The first optical element 310v and the third optical element 330v are optical components whose optical power on the second optical axis F1 is greater than that on the third optical axis S1. As an example, the first optical element 310v and the third optical element 330v, which are formed as a single unit, are cylindrical lenses having optical functional axes and non-optical functional axes.

[0527] The 9th optical element 319v and the 11th optical element 339v, which are formed as a single unit, are lens array optical elements. The 9th optical element 319v and the 11th optical element 339v, which are formed as a single unit, are the same as the lens array element involved in the second variation of the third embodiment, and have multiple lenses, which are lenses with convex surfaces. Furthermore, the convex surface is provided on one side of the light transmission window 317 of these multiple lenses. These multiple lenses function as FA lenses. Therefore, for a semiconductor laser array element having multiple optical waveguides formed on a common semiconductor substrate, by employing the aforementioned 1st optical element 310v and 3rd optical element 330v, it is possible to reduce the divergence angle of the first laser beam L11 in the second optical axis F1 direction and the divergence angle of the second laser beam L12 in the fifth optical axis F2 direction.

[0528] Furthermore, the fifth optical element 350v and the sixth optical element 360v, which are formed as a single unit, are lens arrays with multiple (in this case, three) convex surfaces to correspond to multiple lasers emitted from multiple semiconductor laser elements.

[0529] exist Figure 45 In this light source module, a second optical element 320a and a fourth optical element 340a, and a fifth optical element 350v and a sixth optical element 360v, which are integrally formed, are configured in the emission direction of the laser emitted from the first semiconductor laser module 101v. Multiple first semiconductor laser modules 101v can be used in one light source module. In this case, corresponding to each direction in which multiple lasers are emitted from the multiple first semiconductor laser modules 101v, the second optical element 320a and the fourth optical element 340a, and the fifth optical element 350v and the sixth optical element 360v, which are integrally formed, are configured. In this light source module, the position of the light-emitting point and the emission direction of the laser between the semiconductor laser elements mounted on the different first semiconductor laser modules 101v depend on the mounting accuracy of the first semiconductor laser modules 101v to the light source module. For example, when the mounting precision of multiple first semiconductor laser modules 101v varies, the positions of the light-emitting points of the semiconductor laser elements and the emission directions of the lasers will also differ. Therefore, it is difficult to ensure that the emission directions of multiple lasers emitted from multiple semiconductor laser elements are completely consistent with a predetermined direction. Therefore, by adjusting the second optical element 320a and the fourth optical element 340a, and the fifth optical element 350v and the sixth optical element 360v, which are formed integrally, for each first semiconductor laser module 101v, it is possible to ensure that the emission directions of the lasers emitted from the multiple first semiconductor laser modules 101v are consistent.

[0530] (Eighth Embodiment) Next, the eighth embodiment will be described. Utilizing... Figure 46 as well as Figure 47 The configuration of the first semiconductor laser module in the light source module according to the eighth embodiment will be described.

[0531] Figure 46 This is a perspective view showing the configuration of the first semiconductor laser module 101w according to the eighth embodiment. Figure 47 This is a schematic diagram showing the optical system of the light source module 1w according to the eighth embodiment.

[0532] The first semiconductor laser module 101w is identical in configuration to the first semiconductor laser module 101v in the seventh embodiment, except for the following point. Specifically, the difference lies in the placement of the 15th optical element 392, which serves as a beam twister element, between the first optical element 310w and the light-transmitting window 317.

[0533] Furthermore, the light source module 1w is identical in configuration to the light source module 1q of the fourth embodiment, except for the following point. Specifically, the first semiconductor laser element 11w differs in that it emits a plurality of first laser beams.

[0534] Furthermore, the light source module 1w according to this embodiment has multiple semiconductor laser modules 100w. Among the multiple semiconductor laser modules 100w according to this embodiment, the multiple semiconductor laser modules 100w other than the first semiconductor laser module 101w also have the same configuration as the first semiconductor laser module 101w. Moreover, in this embodiment, the wavelength of the laser emitted from each of the multiple semiconductor laser modules 100w is different.

[0535] The first semiconductor laser element 11w involved in this embodiment is the same as that in the seventh embodiment, having a plurality of optical waveguides 61, from which a first laser beam is emitted.

[0536] A first optical element 310w, a 15th optical element 392, and a light-transmitting window 317 are sequentially arranged in the emission direction of the first semiconductor laser element 11w.

[0537] The 15th optical element 392 constitutes a beam rotation element. More specifically, the 15th optical element 392 is a cylindrical lens array element. The 15th optical element 392 is a cylindrical lens array element with a configuration in which the optical functional axis of the cylindrical lens is tilted at 45 degrees relative to the fast axis.

[0538] Accordingly, the first laser beam emitted from the first semiconductor laser element 11w rotates 90 degrees around the first optical axis (optical axis A1). That is, the 15th optical element 392 has the function of rotating the fast axis and slow axis of the plurality of first laser beams emitted from the first semiconductor laser element 11w by 90 degrees. Therefore, the fast axis of the plurality of first laser beams just emitted from the first semiconductor laser element 11w is parallel to the x-direction and the slow axis is parallel to the y-direction, but after passing through the beam rotation element, the fast axis of the plurality of first laser beams is parallel to the ξ-direction and the slow axis is parallel to the η-direction.

[0539] In this embodiment, a fifth optical element 350 and a second optical element 320w are employed. As described above, since the directions of the fast axis and the slow axis alternate, the fifth optical element 350 functions as a SAC lens, and the second optical element 320w functions as a FAC lens. The second optical element 320w is a lens array having multiple (3) cylindrical convex surfaces. The fifth optical element 350 is a lens having cylindrical convex surfaces.

[0540] like Figure 47 As shown, similar to the fourth embodiment, in the light source module 1w, a plurality of semiconductor laser modules 100w, including a first semiconductor laser module 101w and a second semiconductor laser module 102w, are arranged along an arc shape.

[0541] With the above configuration, the same effect as the fourth embodiment can be expected.

[0542] Furthermore, since the first semiconductor laser element 11w of this embodiment emits multiple lasers, the optical density of the multiple lasers can be increased in the light source module of this embodiment.

[0543] (9th embodiment) Next, the ninth embodiment will be described. Utilizing Figure 48 The configuration of the first semiconductor laser module in the light source module according to the ninth embodiment will be described.

[0544] Figure 48 This is a perspective view showing the configuration of the first semiconductor laser module 101x according to the ninth embodiment.

[0545] In the first semiconductor laser module 101x according to the ninth embodiment, the main configuration is the same as that of the first semiconductor laser module 101w according to the eighth embodiment, except for the following four points. Specifically, the four differences are: the semiconductor laser array element 10x having the first, second and third semiconductor laser elements, the first optical element 310x and the third optical element 330x are formed as one unit, the second optical element 320x and the fourth optical element 340x are formed as one unit, and the fifth optical element 350x and the sixth optical element 360x are formed as one unit.

[0546] Furthermore, the configurations of the first optical element 310x and the third optical element 330x, which are formed as a single unit, are the same as those of the first optical element 310w according to the eighth embodiment. The configurations of the second optical element 320x and the fourth optical element 340x, which are formed as a single unit, are the same as those of the second optical element 320w according to the eighth embodiment. The configurations of the fifth optical element 350x and the sixth optical element 360x, which are formed as a single unit, are the same as those of the fifth optical element 350 according to the eighth embodiment.

[0547] With the above configuration, the same effect as the fourth embodiment can be expected.

[0548] (Other implementation methods) The light source module involved in this disclosure has been described above based on various embodiments and modifications, but this disclosure is not limited to these embodiments and modifications. Within the scope of this disclosure, various modifications conceivable to those skilled in the art, and other forms constructed by combining some of the constituent elements of various embodiments and modifications, are all included within the scope of this disclosure.

[0549] Furthermore, the above-described embodiments can be modified, replaced, added to, or omitted in various ways within the scope of the claims or their equivalents.

[0550] Furthermore, regarding the lens with a convex or concave cylindrical surface in the above embodiments, the convex or concave surface can be a perfectly circular cylindrical surface, or it can be a shape different from a perfect circle. By adopting a shape different from a perfect circle, aberrations can be reduced.

[0551] This disclosure provides a small, compact light source module that can both suppress the degradation of semiconductor laser elements and improve the laser's bonding efficiency on an object.

[0552] Symbol Explanation 1. 1a, 1d, 1e, 1f, 1h, 1i, 1j, 1k, 1n, 1q, 1r, 1s, 1t, 1w, 1z Light source modules; 2. 2q, 2z Housings; 3. 3q Sidewalls; 4. 4z, 43 Optical fibers; 5. 5a, 5b, 5z Multilevel substrates; 6. 6q Substrates; 8q, 1201, 1211, 1221, 1231 Openings; 10V, 10X Semiconductor laser array elements; 11, 11W First semiconductor laser element; 11z Semiconductor laser element; 12 Second semiconductor laser element; 13 Third semiconductor laser element; 14 Fourth semiconductor laser element; 21, 21a, 21c, 21d, 21p, 21u First package; 22 Second package; 50, 50z Base; 50F Metal film; 60, 60z Emitting points; 61 Optical waveguide; 61q first face; 62q second face; 100, 100a, 100m, 100n, 100p, 21s, 100w semiconductor laser modules; 1000 semiconductor laser module unit; 101, 101a, 101b, 101c, 101d, 101e, 101f, 101h, 101i, 101j, 101k, 101u, 101v, 101w, 101x, 1011, 1012, 1013, 1014 first semiconductor laser modules; 102, 102a, 102w second semiconductor laser modules; 103 third semiconductor laser modules; 110 cover component; 120, 120a, 120p frame; 121, 121a first frame section; 122, 122a, 122b Frame 2; 123, 123c Frame 3; 130, 130m, 130p Bottom; 130a Semiconductor laser element mounting surface; 131, 131p, 1312, 1313 Anode extraction electrode; 132 Anode electrode; 133 Through-hole electrode; 134, 134p, 1342 Cathode extraction electrode; 135 Cathode electrode; 136 Through-hole electrode; 137 First metal film; 138 Second metal film; 1381 Third metal film; 1382 Fourth metal film; 141 First bonding component; 142 Second bonding component; 143 Third bonding component; 144 Fourth bonding component; 145 Fifth bonding component; 151 First bonding preparation film; 152 Second bonding preparation film; 161 First support component; 162 Second support component; 163 Module support component; 164 Optical support component; 165 Optical element holding part; 166 Screw; 167 Adhesive; 170 Opening; 171 Frame; 180 Support; 190, 190d, 190p, 191, 192, 193, 194, 1901, 1902, 1931 Metal wire; 210 Laser beam splitter; 211 Actuator; 291 Anode wiring block; 294 Cathode wiring block;Optical elements 1: 310, 310a, 310b, 310c, 310d, 310e, 310f, 310p, 310v, 310w, 310x, 3101, 3102, 3103; 317, 337: Light transmission windows; 8: Optical elements 8: 318a, 318b, 318f, 318p; 9: Optical elements 9: 319a, 319b, 319c, 319f, 319h, 319p, 319v; 2: Optical elements 2: 320, 320a, 320h, 320m, 320w, 320x, 3201, 3202, 3204; 320z, 350z, 380z: Lenses; 330, 330a, 330b, 330v, 330x Optical element 3; 338a, 338b, 338p Optical element 10; 339a, 339b, 339p, 339v Optical element 11; 340, 340a, 340m, 340x Optical element 4; 350, 350m, 350v, 350x Optical element 5; 360, 360m, 360v, 360x Optical element 6; 370, 370q, 370r Optical element 7; 370z Reflector; 371, 375q Reflector 1; 372, 376q Reflector 2; 377q Reflector 3; 380, 380a, 380m, 3803 Optical element 12; 390 Optical element 13; 391 Optical element 14; 392 Optical element 15; 400, 400p Lens array optical elements; 931 anode lead connector; 934 cathode lead connector; L11, L12, L13, L14, L15, L16, L16a, L17 first laser beam; L21, L22, L23, L24, L25, L26, L26a, L27 second laser beam; L36, L36a, L37 third laser beam; L46, L46a fourth laser beam; L56, L56a fifth laser beam; L66, L66a sixth laser beam.

Claims

1. A semiconductor laser module, have: The first semiconductor laser element is hermetically sealed; The package includes a plate-shaped bottom and a frame with a first opening in the center; and Cover components, The frame is made of ceramic. The first semiconductor laser element is disposed within the first opening. The cover component covers the top of the first opening. The first semiconductor laser element is hermetically sealed by the package and the cover component. The frame has an anode electrode and a cathode electrode that electrically connect the first opening to the outside of the semiconductor laser module. At least a portion of the frame is made of an insulator. The anode electrode, the cathode electrode, and the bottom are electrically insulated from each other. The frame has an anode extraction electrode that connects the anode electrode to the outside of the semiconductor laser module, and a cathode extraction electrode that connects the cathode electrode to the outside of the semiconductor laser module. The anode extraction electrode and the cathode extraction electrode are disposed on the upper surface of the frame. The frame is composed of a first frame portion and a second frame portion. On the upper surface of the first frame portion, a metal film constituting the anode electrode and the anode extraction electrode, and another metal film constituting the cathode electrode and the cathode extraction electrode are formed. The second frame is mounted on the metal film side and the other metal film side of the first frame, such that the anode electrode and the cathode electrode are disposed inside the second frame, and the anode extraction electrode and the cathode extraction electrode are disposed outside the second frame.

2. The semiconductor laser module as described in claim 1, It has a light-transmitting window that allows a first laser beam emitted from the first semiconductor laser element to pass through and to extract the first laser beam to the outside of the semiconductor laser module. The first semiconductor laser element is hermetically sealed by the light-transmitting window, the package, and the cover component.

3. The semiconductor laser module as described in claim 2, The anode extraction electrode and the cathode extraction electrode are positioned opposite the light-transmitting window, separated by the first opening.

4. The semiconductor laser module as described in any one of claims 1 to 3, The first semiconductor laser element is an external resonant laser element.

5. A semiconductor laser module, have: A first semiconductor laser element and a second semiconductor laser element that are hermetically sealed; The package includes a plate-shaped bottom and a frame with a first opening in the center; and Cover components, The frame is made of ceramic. The first semiconductor laser element and the second semiconductor laser element are disposed within the first opening. The cover component covers the top of the first opening. The first semiconductor laser element and the second semiconductor laser element are hermetically sealed by the package and the cover component. The first semiconductor laser element and the second semiconductor laser element are electrically connected in series via a metal wire.

6. The semiconductor laser module as described in claim 5, The frame has an anode electrode and a cathode electrode that electrically connect the first opening to the outside of the semiconductor laser module. At least a portion of the frame is made of an insulator. The anode electrode, the cathode electrode, and the bottom are electrically insulated from each other. The first semiconductor laser element is electrically connected to the anode electrode by a first metal wire. The second semiconductor laser element is electrically connected to the cathode electrode by a second metal wire.

7. The semiconductor laser module as described in claim 6, The frame has an anode extraction electrode that connects the anode electrode to the outside of the semiconductor laser module, and a cathode extraction electrode that connects the cathode electrode to the outside of the semiconductor laser module. The anode extraction electrode and the cathode extraction electrode are disposed on the upper surface of the frame.

8. The semiconductor laser module as described in any one of claims 5 to 7, The first semiconductor laser element and the second semiconductor laser element are external resonant laser elements.

9. The semiconductor laser module as described in claim 5, The semiconductor laser module has a first optical element into which a first laser beam emitted from the first semiconductor laser element is incident. The first optical element is hermetically sealed.

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