Photoelectric detection device and electronic equipment
By optimizing the layout design of the photoelectric conversion region and the isolation region in the photoelectric detection device, an effective transmission path between the transmission transistor and the charge holding section is ensured, thus solving the problem of image quality degradation caused by pixel miniaturization and improving signal charge transmission characteristics.
CN121844730APending Publication Date: 2026-04-10SONY SEMICON SOLUTIONS CORP
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Patent Information
- Application Number
- CN202480058878.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-10-17
- Filing Date
- 2024-10-17
- Publication Date
- 2026-04-10
AI Technical Summary
Technical Problem
As pixels become smaller, the distance between the transmission transistor and the charge holding part becomes too close, which affects the signal charge transfer characteristics and degrades image quality performance.
Method used
In the photoelectric detection device, the layout of the photoelectric conversion area and the isolation area is designed to be square. The transmission transistor is located in the photoelectric conversion area, and the charge holding part is located in the isolation area across the center line to ensure the effectiveness of the transmission path.
Benefits of technology
It improves image quality performance, enhances signal charge transmission characteristics, and solves the problem of image quality degradation caused by close proximity.
✦ Generated by Eureka AI based on patent content.
Abstract
According to the invention, the image quality performance is improved. The photodetection device includes: a semiconductor layer having a first surface portion and a second surface portion on opposite sides to each other in one direction; a photoelectric conversion region provided in the semiconductor layer adjacent to the isolation region in plan view, the photoelectric conversion region having a rectangular planar shape; a photoelectric conversion unit provided in the photoelectric conversion region; and a transfer transistor that is provided in the photoelectric conversion region and transfers the signal charge obtained by photoelectric conversion by the photoelectric conversion unit to a charge holding unit. The charge holding portion is provided in the isolation region so as to span a center line that is orthogonal to an outer peripheral edge portion connecting both corner portions of the photoelectric conversion region in a plan view and passes through a center portion of the photoelectric conversion region.
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