Semiconductor device

Abstract

The semiconductor device includes a plurality of upper and lower arm circuit bodies. Each of the plurality of upper and lower arm circuit bodies includes: a first circuit body configured by sandwiching a first semiconductor element with a first conductor and a second conductor; and a second circuit body configured by sandwiching a second semiconductor element with a third conductor and a fourth conductor, the arrangement direction of the first circuit body and the second circuit body being a first direction, the upper and lower arm circuits being adjacent to each other in a second direction orthogonal to the first direction, the semiconductor device including: a plurality of first DC terminals connected to the second circuit body, extending in the first direction, and extending in the second direction; the second circuit body is disposed on both side surfaces of the first circuit body in the second direction. And a plurality of second DC terminals connected to the first circuit bodies and disposed between the first DC terminals, at least one of the first DC terminals having an adjacent connection portion connecting adjacent second circuit bodies.

Description

Technical Field

[0001] This invention relates to semiconductor devices. Background Technology

[0002] As one of the general requirements for power conversion devices, low inductance is required. Patent Document 1 discloses a semiconductor device in which semiconductor elements are arranged along the Y direction, an arm connection is located therebetween, P terminals and N terminals are arranged on the same side of the Y direction, a substrate sandwiching the semiconductor elements is provided, and the device includes a substrate, an insulating substrate, a surface metal body, a back metal body, and a sealing body that seals the surface metal body together with the semiconductor elements. The surface metal body has N wiring and relay wiring. The N wiring has a base arranged with the relay wiring in the Y direction, and a pair of extension portions extending from the base along the Y direction in such a way as to sandwich the relay wiring in the X direction and respectively connected to the N terminals. In the X direction, the length L1 of the end of the relay wiring, the length L2 of the opposite side of the base, and the length L3 of the element arrangement area of ​​the base satisfy the relationship L1 < L2 < L3.

[0003] Existing technical documents

[0004] Patent documents

[0005] Patent Document 1: Japanese Patent Application Publication No. 2022-181823 Summary of the Invention

[0006] The problem that the invention aims to solve

[0007] In the invention described in Patent Document 1, there is room for improvement in reducing inductance.

[0008] Methods for solving problems

[0009] The semiconductor device according to a first aspect of the present invention includes a plurality of upper and lower arm circuits, each of the plurality of upper and lower arm circuits including: a first circuit formed by a first semiconductor element sandwiched between a first conductor and a second conductor; and a second circuit formed by a second semiconductor element sandwiched between a third conductor and a fourth conductor. The arrangement direction of the first circuit and the second circuit is set as a first direction, and the plurality of upper and lower arm circuits are adjacent along a second direction orthogonal to the first direction. The semiconductor device includes: a plurality of first DC terminals connected to the second circuits, extending in the first direction and disposed on both sides of the first circuit in the second direction; and a plurality of second DC terminals connected to the first circuits and disposed between the first DC terminals. At least one of the first DC terminals has an adjacent connection portion that connects adjacent second circuits.

[0010] Invention Effects

[0011] According to the present invention, the inductance of a semiconductor device can be reduced. Attached Figure Description

[0012] Figure 1 It is a circuit diagram of a semiconductor device.

[0013] Figure 2 It is a three-dimensional view of the semiconductor device.

[0014] Figure 3 This is a diagram showing the semiconductor device viewed from the negative Z-axis side.

[0015] Figure 4 This is an exploded perspective view of the semiconductor device after the sealing resin has been removed.

[0016] Figure 5 This is an exploded 3D view of the first and second circuit components.

[0017] Figure 6 This is an external view of a semiconductor device after the sealing resin and signal terminals have been removed.

[0018] Figure 7 This is a sectional view of section VII-VII of the first positive terminal connector.

[0019] Figure 8 This is an explanatory diagram showing the connection of the negative end.

[0020] Figure 9 This is an explanatory diagram showing the connection of the positive terminal.

[0021] Figure 10 It is section VII-VII of the first positive terminal connector in the second embodiment.

[0022] Figure 11 This is an exploded perspective view of the semiconductor device in the third embodiment.

[0023] Figure 12 This is an external view of the semiconductor device after removing the sealing resin and signal terminals from the fourth embodiment. Detailed Implementation

[0024] -First Embodiment-

[0025] The following is for reference Figures 1-9 The first embodiment of the semiconductor device is described.

[0026] Figure 1 This is a circuit diagram of semiconductor device 300. Semiconductor device 300 includes a first semiconductor element 201, a second semiconductor element 202, a third semiconductor element 211, a fourth semiconductor element 212, a fifth semiconductor element 221, and a sixth semiconductor element 222.

[0027] Each of the first semiconductor element 201, the second semiconductor element 202, the third semiconductor element 211, the fourth semiconductor element 212, the fifth semiconductor element 221, and the sixth semiconductor element 222 is a FET (Field Effect Transistor). However, the first semiconductor element 201, the second semiconductor element 202, the third semiconductor element 211, the fourth semiconductor element 212, the fifth semiconductor element 221, and the sixth semiconductor element 222 can also be implemented instead of a FET by a combination of an IGBT (Insulated Gate Bipolar Transistor) and a diode.

[0028] Semiconductor device 300 includes an upper arm 301 shown in the upper part of the figure and a lower arm 302 shown in the lower part of the figure. The upper arm 301 is composed of a first semiconductor element 201, a third semiconductor element 211, and a fifth semiconductor element 221. The lower arm 302 is composed of a second semiconductor element 202, a fourth semiconductor element 212, and a sixth semiconductor element 222. The upper arm 301 has a first positive terminal 101, a second positive terminal 111, and a third positive terminal 121. The upper arm 301 includes a first signal terminal 104, a third signal terminal 114, and a fifth signal terminal 124.

[0029] The lower arm 302 includes a first negative terminal 102, a second negative terminal 112, a third negative terminal 122, and a fourth negative terminal 132. The lower arm 302 includes a second signal terminal 105, a fourth signal terminal 115, and a sixth signal terminal 125. The first positive terminal 101, the second positive terminal 111, the third positive terminal 121, the first negative terminal 102, the second negative terminal 112, the third negative terminal 122, and the fourth negative terminal 132 are connected to capacitors, etc., to supply power from outside the semiconductor device 300.

[0030] Signal terminals 104, 105, 114, 115, 124, and 125 are connected to a control board to control the switching operation of the semiconductor element. The semiconductor device 300 includes a first AC terminal 103, a second AC terminal 113, and a third AC terminal 123. The semiconductor device 300 includes a first intermediate connection portion 106, a second intermediate connection portion 116, and a third intermediate connection portion 126. Hereinafter, the first intermediate connection portion 106, the second intermediate connection portion 116, and the third intermediate connection portion 126 are collectively referred to as the "intermediate connection portion assembly" 106G. The intermediate connection portion assembly 106G electrically connects the upper arm 301 and the lower arm 302.

[0031] The first intermediate connection 106 electrically connects the first semiconductor element 201, the second semiconductor element 202, and the first AC terminal 103. The second intermediate connection 116 electrically connects the third semiconductor element 211, the fourth semiconductor element 212, and the second AC terminal 113. The third intermediate connection 126 electrically connects the fifth semiconductor element 221, the sixth semiconductor element 222, and the third AC terminal 123. The first AC terminal 103, the second AC terminal 113, and the third AC terminal 123 output current from the semiconductor device 300 to the outside, supplying power to AC motors and the like.

[0032] The semiconductor device 300, as shown in the upper part of the figure, includes a first positive terminal connection portion 107 and a second positive terminal connection portion 117. The first positive terminal connection portion 107 electrically connects the first positive terminal 101 to the second positive terminal 111. The second positive terminal connection portion 117 electrically connects the second positive terminal 111 to the third positive terminal 121. The first positive terminal 101, the second positive terminal 111, and the third positive terminal 121 are electrically connected through the first positive terminal connection portion 107 and the second positive terminal connection portion 117.

[0033] The semiconductor device 300, shown in the lower part of the figure, includes a first negative terminal connection 108, a second negative terminal connection 118, and a third negative terminal connection 128. The first negative terminal connection 108 electrically connects the first negative terminal 102 to the second negative terminal 112. The second negative terminal connection 118 electrically connects the second negative terminal 112 to the third negative terminal 122. The third negative terminal connection 128 electrically connects the third negative terminal 122 to the fourth negative terminal 132. The first negative terminal 102, the second negative terminal 112, the third negative terminal 122, and the fourth negative terminal 132 are electrically connected through the first negative terminal connection 108, the second negative terminal connection 118, and the third negative terminal connection 128.

[0034] The first positive terminal 101, the second positive terminal 111, and the third positive terminal 121 have parasitic inductances L1, L2, and L3, respectively. The first negative terminal 102, the second negative terminal 112, the third negative terminal 122, and the fourth negative terminal 132 have parasitic inductances L4, L5, L6, and L7, respectively. Each parasitic inductance generates a surge voltage as the semiconductor element switches. The surge voltage is proportional to the parasitic inductance and the switching speed of the semiconductor element. If the parasitic inductance increases, the surge voltage increases, which may damage the semiconductor element. However, if the switching speed is slowed down to suppress the surge voltage, the losses increase and the output decreases. Parasitic inductances L1, L2, and L3 are connected in parallel, thus reducing the inductance. Parasitic inductances L4, L5, L6, and L7 are connected in parallel, thus reducing the inductance.

[0035] Figure 2 This is a perspective view of the semiconductor device 300. Most of the semiconductor device 300 is sealed with sealing resin 600. Figure 2 In this figure, three mutually orthogonal axes, namely the X, Y, and Z axes, are shown for reference to their relationship with other figures. Furthermore, the X-axis direction is sometimes referred to as the "second direction," and the Y-axis direction as the "first direction." The sealing resin 600 is a generally flat plate that is relatively wide in the XY plane and has thickness in the Z-axis direction. In this figure, the negative Z-axis side of the semiconductor device 300 is hidden and not visually discernible.

[0036] A portion of the first positive terminal 101, the second positive terminal 111, the third positive terminal 121, the first negative terminal 102, the second negative terminal 112, the third negative terminal 122, the fourth negative terminal 132, the first AC terminal 103, the second AC terminal 113, and the third AC terminal 123 are exposed from the sealing resin 600. A portion of the first signal terminal 104, the second signal terminal 105, the third signal terminal 114, the fourth signal terminal 115, the fifth signal terminal 124, and the sixth signal terminal 125 are exposed from the sealing resin 600. Furthermore, hereinafter, the first positive terminal 101, the second positive terminal 111, and the third positive terminal 121 are sometimes collectively referred to as the "second DC terminal." Additionally, the first negative terminal 102, the second negative terminal 112, the third negative terminal 122, and the fourth negative terminal 132 are sometimes collectively referred to as the "first DC terminal."

[0037] The semiconductor device 300 has a first heat dissipation surface 303, a second heat dissipation surface 304, a third heat dissipation surface 305, a fourth heat dissipation surface 306, a fifth heat dissipation surface 307, and a sixth heat dissipation surface 308 on its Z-axis positive side. The semiconductor device 300 dissipates heat generated by the semiconductor element to the outside through the first heat dissipation surface 303, the second heat dissipation surface 304, the third heat dissipation surface 305, the fourth heat dissipation surface 306, the fifth heat dissipation surface 307, and the sixth heat dissipation surface 308.

[0038] Figure 3 From and Figure 2 This is a view of the semiconductor device 300 from the opposite side, i.e., the negative Z-axis side. That is, the negative Z-axis side is shown in this figure, but the positive Z-axis side is hidden and not visually discernible. The semiconductor device 300 includes a 7th heat dissipation surface 309, an 8th heat dissipation surface 310, a 9th heat dissipation surface 311, a 10th heat dissipation surface 312, an 11th heat dissipation surface 313, and a 12th heat dissipation surface 314. The semiconductor device 300 dissipates heat from the semiconductor element to the outside through the 7th heat dissipation surface 309, the 8th heat dissipation surface 310, the 9th heat dissipation surface 311, the 10th heat dissipation surface 312, the 11th heat dissipation surface 313, and the 12th heat dissipation surface 314.

[0039] Figure 4This is an exploded perspective view of the semiconductor device 300 with the sealing resin 600 removed. Figure 4 viewpoint and Figure 2 The semiconductor device 300 includes a first circuit body 320, a second circuit body 321, a third circuit body 322, a fourth circuit body 323, a fifth circuit body 324, and a sixth circuit body 325. Each circuit body internally includes a first semiconductor element 201 to a sixth semiconductor element 222. Specifically: The first circuit body 320 internally includes a first semiconductor element 201. The second circuit body 321 internally includes a second semiconductor element 202. The third circuit body 322 internally includes a third semiconductor element 211. The fourth circuit body 323 internally includes a fourth semiconductor element 212. The fifth circuit body 324 internally includes a fifth semiconductor element 221. The sixth circuit body 325 internally includes a sixth semiconductor element 222.

[0040] The first circuit body 320, the third circuit body 322, and the fifth circuit body 324 form the upper arm 301. The second circuit body 321, the fourth circuit body 323, and the sixth circuit body 325 form the lower arm 302. The first circuit body 320 and the second circuit body 321 form a pair of upper and lower arms. The third circuit body 322 and the fourth circuit body 323 form a pair of upper and lower arms. The fifth circuit body 324 and the sixth circuit body 325 form a pair of upper and lower arms.

[0041] The first circuit body 320 has a first positive terminal connection 326. The first positive terminal connection 326 is connected to the first positive terminal 101 via a first positive terminal bonding material 500. The second circuit body 321 has a first AC terminal connection 327. The first AC terminal connection 327 is connected to the first AC terminal 103 via a first AC terminal bonding material 509. The second circuit body 321 has a first negative terminal connection 360 and a second negative terminal connection 361. The first negative terminal connection 360 is connected to the first negative terminal connection 340 via a first negative terminal bonding material 503. The second negative terminal connection 361 is connected to the second negative terminal connection 341 via a second negative terminal bonding material 504.

[0042] The third circuit body 322 has a second positive terminal connection 328. The second positive terminal connection 328 is connected to the second positive terminal 111 via a second positive terminal bonding material 501. The fourth circuit body 323 has a second AC terminal connection 329. The second AC terminal connection 329 is connected to the second AC terminal 113 via a second AC terminal bonding material 510. The fourth circuit body 323 has a third negative terminal connection 362 and a fourth negative terminal connection 363. The third negative terminal connection 362 is connected to the third negative terminal connection 342 via a third negative terminal bonding material 505. The fourth negative terminal connection 363 is connected to the fourth negative terminal connection 343 via a fourth negative terminal bonding material 506.

[0043] The fifth circuit body 324 has a third positive terminal connection 330. The third positive terminal connection 330 is connected to the third positive terminal 121 via a third positive terminal bonding material 502. The sixth circuit body 325 has a third AC terminal connection 331. The third AC terminal connection 331 is connected to the third AC terminal 123 via a third AC terminal bonding material 511. The sixth circuit body 325 has a fifth negative terminal connection 364 and a sixth negative terminal connection 365. The fifth negative terminal connection 364 is connected to the fifth negative terminal connection 344 via a fifth negative terminal bonding material 507. The sixth negative terminal connection 365 is connected to the sixth negative terminal connection 345 via a sixth negative terminal bonding material 508.

[0044] The first negative terminal connector 340 is electrically connected to the first negative plate 346. The first negative plate 346 is electrically connected to the first negative terminal 102. The first negative terminal connector 340, the first negative plate 346, and the first negative terminal 102 are formed as a single unit. The second negative terminal connector 341 and the third negative terminal connector 342 are electrically connected to the second negative plate 347. The second negative plate 347 is electrically connected to the second negative terminal 112. The second negative terminal connector 341, the third negative terminal connector 342, the second negative plate 347, and the second negative terminal 112 are formed as a single unit. The fourth negative terminal connector 343 and the fifth negative terminal connector 344 are electrically connected to the third negative plate 348.

[0045] The third negative electrode plate 348 is electrically connected to the third negative terminal 122. The fourth negative terminal connection portion 343, the fifth negative terminal connection portion 344, the third negative electrode plate 348, and the third negative terminal 122 are formed as a single component. The sixth negative terminal connection portion 345 is electrically connected to the fourth negative electrode plate 349. The fourth negative electrode plate 349 is electrically connected to the fourth negative terminal 132. The sixth negative terminal connection portion 345, the fourth negative electrode plate 349, and the fourth negative terminal 132 are formed as a single component. The bonding material described above, such as the first positive electrode bonding material 500, is, for example, solder. However, the bonding material is not limited to solder; conductive adhesives or sintering materials may also be used. As explained above, by constructing the positive terminal, negative terminal, AC terminal, and circuit body from different components, the individual components are made smaller, making it easier to improve the dimensional accuracy of the components.

[0046] Figure 5 This is an exploded perspective view of the first circuit body 320 and the second circuit body 321. Figure 5 Also with Figure 2 , Figure 4From the same viewpoint, the negative Z-axis side of the first semiconductor element 201, shown approximately in the center of the diagram, is bonded to the first conductor plate 350 via a first semiconductor element bonding material 512. The other side of the first semiconductor element 201, i.e., the positive Z-axis side, is bonded to the second conductor plate 351 via a second semiconductor element bonding material 513. The first semiconductor element 201 is cooled from both sides via the first conductor plate 350 and the second conductor plate 351. The first semiconductor element 201 has a first signal pad 230. The first signal pad 230 is connected to the first signal terminal 104 via a first signal bonding material 517.

[0047] The positive Z-axis side of the second semiconductor element 202 is bonded to the third conductor plate 352 via the third semiconductor element bonding material 514. The other side of the second semiconductor element 202, i.e., the negative Z-axis side, is bonded to the fourth conductor plate 353 via the fourth semiconductor element bonding material 515. The second semiconductor element 202 is cooled from both sides via the third conductor plate 352 and the fourth conductor plate 353. The second semiconductor element 202 has a second signal pad 231. The second signal pad 231 is connected to the second signal terminal 105 via the second signal bonding material 518.

[0048] The second conductor plate 351 has an intermediate connection terminal 354. The intermediate connection terminal 354 is joined to the third conductor plate 352 via an intermediate bonding material 516. The first conductor plate 350 has a positive connection terminal 355. The positive connection terminal 355 is present on the right and left sides of the diagram, and therefore, for ease of distinction, they are referred to as the left positive connection terminal 355L and the right positive connection terminal 355R. The intermediate connection terminal 354 is the first intermediate connection portion 106. The third circuit body 322 and the fifth circuit body 324 have the same structure as the first circuit body 320. The fourth circuit body 323 and the sixth circuit body 325 have the same structure as the second circuit body 321.

[0049] Figure 6 This is an external view of the semiconductor device 300 after the sealing resin 600 and signal terminals have been removed. Figure 6 In the diagram, the right side is the positive side of the X-axis, the top of the diagram is the positive side of the Y-axis, and the front of the diagram is the positive side of the Z-axis. Figure 6 The upward and downward arrows near the center indicate the direction of current flow. The first circuit body 320 is arranged such that it is sandwiched between the first negative plate 346 and the second negative plate 347 on both sides from the X-axis direction. The current flowing through the first circuit body 320 is configured to be opposite to the direction of the current flowing through the first negative plate 346 and the second negative plate 347, thereby reducing the inductance.

[0050] The third circuit element 322 is configured such that it is sandwiched between the second negative plate 347 and the third negative plate 348 on both sides from the X-axis direction. The current flowing through the third circuit element 322 is configured to be opposite in direction to the current flowing through the second negative plate 347 and the third negative plate 348, thus reducing the inductance. The fifth circuit element 324 is configured such that it is sandwiched between the third negative plate 348 and the fourth negative plate 349 on both sides from the X-axis direction. The current flowing through the fifth circuit element 324 is configured to be opposite in direction to the current flowing through the third negative plate 348 and the fourth negative plate 349, thus reducing the inductance.

[0051] The first intermediate connection portion 106 is arranged such that it is sandwiched between the first negative terminal connection portion 360 and the second negative terminal connection portion 361 on both sides in the X-axis direction. The current flowing through the first intermediate connection portion 106 is configured to be opposite to the direction of the current flowing through the first negative terminal connection portion 360 and the second negative terminal connection portion 361, thereby reducing the inductance.

[0052] The second intermediate connection portion 116 is arranged such that it is sandwiched between the third negative connection portion 362 and the fourth negative connection portion 363 on both sides in the X-axis direction. The current flowing through the second intermediate connection portion 116 is configured to be opposite in direction to the current flowing through the third negative connection portion 362 and the fourth negative connection portion 363, thereby reducing the inductance.

[0053] The third intermediate connection portion 126 is arranged such that it is sandwiched between the fifth negative connection portion 364 and the sixth negative connection portion 365 on both sides in the X-axis direction. The current flowing through the third intermediate connection portion 126 is configured to be opposite to the direction of the current flowing through the fifth negative connection portion 364 and the sixth negative connection portion 365, thereby reducing the inductance.

[0054] The first negative terminal connector 108 is formed by the first negative terminal connector 360, the second negative terminal connector 361, and the second circuit body 321. The second negative terminal connector 118 is formed by the third negative terminal connector 362, the fourth negative terminal connector 363, and the fourth circuit body 323. The third negative terminal connector 128 is formed by the fifth negative terminal connector 364, the sixth negative terminal connector 365, and the sixth circuit body 325.

[0055] The right positive terminal 355R of the first circuit body 320 and the left positive terminal 355L of the third circuit body 322 are electrically connected. The right positive terminal 355R of the first circuit body 320 and the left positive terminal 355L of the third circuit body 322 form a first positive terminal connection 107. The right positive terminal 355R of the third circuit body 322 and the left positive terminal 355L of the fifth circuit body 324 are electrically connected. The right positive terminal 355R of the third circuit body 322 and the left positive terminal 355L of the fifth circuit body 324 form a second positive terminal connection 117.

[0056] Figure 7 This is a sectional view VII-VII of the first positive terminal connection portion 107. In this figure, the right side of the illustration is the positive side of the X-axis, the inside of the illustration is the positive side of the Y-axis, and the top of the illustration is the positive side of the Z-axis. The positive terminal 355 of the first circuit body 320 and the positive terminal 355 of the third circuit body 322 are arranged such that their sides abut against each other. The right positive terminal 355R of the first circuit body 320 and the left positive terminal 355L of the third circuit body 322 are joined at the positive connection portion 520.

[0057] The left positive terminal 355L and the right positive terminal 355R each have a recess 370. The recesses 370 are engaged by the positive terminal connection portion 520. By abutting the right positive terminal 355R and the left positive terminal 355L, each with a recess 370, the height of the positive terminal connection portion 520 can be suppressed, allowing for space-saving engagement. Furthermore, the second positive terminal connection portion 117 also has the same structure as the first positive terminal connection portion 107. Additionally, in Figure 7 A predetermined spatial distance is ensured between the second negative electrode plate 347 shown at the top and the first circuit body 320 and the third circuit body 322 for insulation purposes.

[0058] Reference Figure 8 and Figure 9 This will again illustrate the connection between the positive and negative terminals in the first embodiment. However, Figure 8 as well as Figure 9 The primary purpose is to illustrate the connections between structures, resulting in inaccurate positional relationships. Therefore, in Figure 8 as well as Figure 9 The XYZ axes are not intentionally recorded.

[0059] Figure 8 This is an explanatory diagram showing the connection of the negative end. In Figure 8 The upper part shows four negative terminals: the first negative terminal 102, the second negative terminal 112, the third negative terminal 122, and the fourth negative terminal 132. The first negative terminal 102 to the fourth negative terminal 132 are connected to the first negative electrode plate 346 to the fourth negative electrode plate 349, respectively. The second negative electrode plate 347 and the third negative electrode plate 348 have a roughly T-shaped design and each has two negative terminal connection portions. Specifically, the second negative electrode plate 347 has a second negative terminal connection portion 341 and a third negative terminal connection portion 342, and the third negative electrode plate 348 has a fourth negative terminal connection portion 343 and a fifth negative terminal connection portion 344.

[0060] Figure 8The three dashed circles shown at the bottom represent the second circuit body 321, the fourth circuit body 323, and the sixth circuit body 325. As described above, all three circuit bodies have a lower arm 302. The second circuit body 321 has a first negative terminal connection portion 360 and a second negative terminal connection portion 361. The fourth circuit body 323 has a third negative terminal connection portion 362 and a fourth negative terminal connection portion 363. The sixth circuit body 325 has a fifth negative terminal connection portion 364 and a sixth negative terminal connection portion 365.

[0061] The second negative terminal connection portion 361 of the second circuit body 321 and the third negative terminal connection portion 362 of the fourth circuit body 323 are both connected to the second negative terminal plate 347. The third negative terminal connection portion 362 of the fourth circuit body 323 and the fourth negative terminal connection portion 363 of the sixth circuit body 325 are both connected to the third negative terminal plate 348. Hereinafter, the second negative terminal plate 347 and the third negative terminal plate 348 are each connected to two adjacent circuit bodies, and are therefore also referred to as "adjacent connection portions" 347G. In addition, the first negative terminal plate 346 to the fourth negative terminal plate 349 are collectively referred to as "negative current path" 346G. The negative terminal connection portion includes the adjacent connection portion 347G.

[0062] Figure 9 This is an explanatory diagram showing the connection of the positive terminal. In Figure 9 The upper part shows three positive extremes: the first positive extreme 101, the second positive extreme 111, and the third positive extreme 121. Figure 9 The lower part shows the first conductor plate 350 of the first circuit body 320, the third circuit body 322, and the fifth circuit body 324. The right positive terminal 355R of adjacent first conductor plates 350 is in contact with the left positive terminal 355L of each other.

[0063] According to the first embodiment described above, the following effects can be obtained.

[0064] (1) The semiconductor device 300 includes multiple upper and lower arm circuits. The upper and lower arm circuits each include: a first circuit 320 formed by sandwiching a first semiconductor element 201 in the Z direction through a first conductor plate 350 and a second conductor plate 351; and a second circuit 321 formed by sandwiching a second semiconductor element 202 in the Z direction through a third conductor plate 352 and a fourth conductor plate 353. The arrangement direction of the first circuit 320 and the second circuit 321 is the Y-axis direction. The upper and lower arm circuits are adjacent to each other along the X-axis direction, which is orthogonal to the Y-axis direction. The semiconductor device 300 includes: multiple negative terminals connected to the second circuit 321, extending along the Y-axis direction, and arranged on both sides of the first circuit 320 in a second direction; and multiple positive DC terminals connected to the first circuit 320 and arranged between the negative terminals. The second negative terminal 112 and the third negative terminal 122 have adjacent connection portions 347G, namely the second negative plate 347 and the third negative plate 348, that connect adjacent second circuit bodies. Therefore, the inductance of the current path flowing to the negative terminal can be reduced. In addition, by arranging the first circuit body 320 and the second circuit body 321 in the Y direction, miniaturization in the X-axis direction can be achieved.

[0065] (2) The semiconductor device 300 includes a first intermediate connection portion 106, a second intermediate connection portion 116, and a third intermediate connection portion 126 connecting the second conductor plate 351 and the third conductor plate 352, and a negative terminal connection portion connecting the fourth conductor plate 353 to the negative terminal, namely, the first negative terminal plate 346 to the fourth negative terminal plate 349. Each intermediate connection portion is sandwiched between two negative current paths 346G from both sides in the X-axis direction. Therefore, as Figure 6 As shown by the middle arrow, the current flowing through the intermediate connection group 106G is in the opposite direction to the current flowing through the negative current path 346G, and the inductance is further reduced by clamping.

[0066] (3) The negative and positive terminals are made of different components than those in the upper and lower arm circuits. The negative and positive terminals are bonded to the upper and lower arm circuits respectively via bonding materials. Therefore, by making them of different components, each component is smaller, making it easier to improve the dimensional accuracy of the components.

[0067] (4) such as Figure 7 As shown, the positive terminals are interconnected. Therefore, by connecting the positive terminals in parallel, more current paths flow through the positive terminals, thus reducing inductance.

[0068] (5) such as Figure 7As shown, the first conductor plate 350 has a right positive terminal 355R and a left positive terminal 355L. The positive terminals are interconnected via the right positive terminal 355R and the left positive terminal 355L. Therefore, by connecting the first conductor plates 350, which are in contact with the circuit body, to each other, the inductance is further reduced.

[0069] (Variation Example 1)

[0070] In the structure of the first embodiment, the positions of the positive and negative terminals can also be interchanged. However, when the positions of the positive and negative terminals are interchanged, the space for the signal terminals is limited, and the terminal width needs to be reduced. In contrast, in the structure of this embodiment, it is possible to ensure that the space for the terminals is increased.

[0071] (Variation Example 2)

[0072] In the first embodiment, the negative and positive terminals are made of components different from those in the upper and lower arm circuit bodies. However, the negative and positive terminals may also be integrally formed with the upper and lower arm circuit bodies.

[0073] (Variation Example 3)

[0074] In the first embodiment, the positive terminals are interconnected. However, the positive terminals may not be interconnected. Furthermore, even when the positive terminals are interconnected, in addition to the first conductor plate 350, a connecting clamp or similar device additionally provided outside the sealing resin 600 may be used.

[0075] (Variation Example 4)

[0076] In the first embodiment, the semiconductor device 300 has three sets of upper and lower arms. However, it is sufficient for the semiconductor device 300 to have at least two sets of upper and lower arms. The more sets there are, the more current paths can be increased, thus improving the inductance reduction effect. Furthermore, if the number of sets of upper and lower arms provided by the semiconductor device 300 is not a multiple of 3, the semiconductor device 300 can also be used in groups of three.

[0077] -Second Implementation Method-

[0078] Reference Figure 10 A second embodiment of the semiconductor device will be described below. In the following description, the same reference numerals are used for the same components as in the first embodiment, and the main differences are explained. Points not specifically described are the same as in the first embodiment. In this embodiment, the shape of the positive terminal connector differs primarily from that in the first embodiment.

[0079] Figure 10This is a sectional view along line VII-VII of the first positive terminal connection portion 107 in the second embodiment. In the first embodiment, the right positive terminal 355R and the left positive terminal 355L are joined by the positive terminal connection portion 520. However, in this modified example, a positive terminal connection plate 371A and a positive terminal connection joining material 520A are used instead of the positive terminal connection portion 520. In this modified example, the right positive terminal 355R and the left positive terminal 355L do not have a recess 370.

[0080] The positive electrode connecting plate 371A and the positive electrode connecting part bonding material 520A are disposed on the positive Z-axis side of the right positive electrode connecting terminal 355R and the left positive electrode connecting terminal 355L, spanning both sides. By bonding with the positive electrode connecting plate 371A, the bonding area can be increased compared with the first embodiment, the inductance and the resistance of the bonding part can be reduced, and the loss caused by terminal heat generation can be reduced.

[0081] -Third Embodiment-

[0082] Reference Figure 11 A third embodiment of the semiconductor device will be described below. In the following description, the same reference numerals are used for the same components as in the first embodiment, and the main differences are explained. Points not specifically described are the same as in the first embodiment. The main difference in this embodiment compared to the first embodiment lies in the pre-molding of a plurality of conductor plates as a single unit.

[0083] Figure 11 This is an exploded perspective view of the semiconductor device 300B in the third embodiment. The viewpoint of this view is the same as that in the first embodiment. Figure 4 The same applies. The first conductor plate 350B, shown in the lower right of the figure, is bonded to the first semiconductor element 201, the third semiconductor element 211, and the fifth semiconductor element 221 via a bonding material. The first conductor plate 350B is formed from a single component. The fourth conductor plate 353B, shown in the upper left of the figure, is bonded to the second semiconductor element 202, the fourth semiconductor element 212, and the sixth semiconductor element 222 via a bonding material. This fourth conductor plate 353B is formed from a single component.

[0084] According to the third embodiment described above, since no connecting components are required, productivity can be improved. Furthermore, since the heat dissipation area can be increased, heat dissipation performance is improved. Moreover, since the current path is increased, the inductance reduction effect is enhanced.

[0085] -Fourth Implementation Method-

[0086] Reference Figure 12A fourth embodiment of the semiconductor device will be described. In the following description, the same reference numerals are used for the same components as in the first embodiment, and the main differences are explained. Points not specifically described are the same as in the first embodiment. The main difference from the first embodiment is that the positions of the positive and negative terminals are interchanged.

[0087] Figure 12 This is an external view of the semiconductor device 300C of the fourth embodiment, with the sealing resin 600 and signal terminals removed. This view corresponds to the first embodiment. Figure 6 Semiconductor device 300C includes a first positive terminal 101C, a second positive terminal 111C, a third positive terminal 121C, a fourth positive terminal 131C, a first negative terminal 102C, a second negative terminal 112C, and a third negative terminal 122C. The first positive terminal 101C is connected to a first circuit body 320C. The second positive terminal 111C is connected to both the first circuit body 320C and the third circuit body 322C. The third positive terminal 121C is connected to both the third circuit body 322C and the fifth circuit body 324C. The fourth positive terminal 131C is connected to the fifth circuit body 324C.

[0088] The first negative terminal 102C is connected to the second circuit body 321C. The second negative terminal 112C is connected to the fourth circuit body 323C. The third negative terminal 122C is connected to the sixth circuit body 325C. The second circuit body 321C is configured such that it is sandwiched between the first positive terminal 101C and the second positive terminal 111C. The third circuit body 332C is configured such that it is sandwiched between the second positive terminal 111C and the third positive terminal 121C. The fifth circuit body 324C is configured such that it is sandwiched between the third positive terminal 121C and the fourth positive terminal 131C. Other structures are the same as in the first embodiment.

[0089] The various embodiments and modifications described above can also be combined. While various embodiments and modifications have been described above, the present invention is not limited to these. Other methods considered within the scope of the technical concept of the present invention are also included within the scope of the present invention.

[0090] Explanation of reference numerals in the attached figures

[0091] 101: The First Positive Extreme

[0092] 102: The first negative extreme

[0093] 106: First intermediate connecting part

[0094] 106G: Intermediate Connector Assembly

[0095] 107: First positive terminal connector

[0096] 108: First negative extreme sub-connector

[0097] 111: The second positive extreme

[0098] 112: The second negative extreme

[0099] 116: Second intermediate connecting part

[0100] 117: Second positive end connector

[0101] 118: Second negative extreme sub-connector

[0102] 121: The 3rd Positive Extreme

[0103] 122: The 3rd Negative Extreme Subunit

[0104] 126: Third intermediate connecting part

[0105] 128: Third negative extreme sub-connector

[0106] 131: The 4th Positive Extreme

[0107] 132: The 4th Negative Extreme Subunit

[0108] 300: Semiconductor Devices

[0109] 301: Upper Arm

[0110] 302: Lower arm

[0111] 320: Circuit 1

[0112] 321: Second circuit body

[0113] 322: Third circuit body

[0114] 323: Fourth circuit body

[0115] 324: Circuit 5

[0116] 325: Circuit 6

[0117] 340: First negative end connector

[0118] 341: Second negative end connector

[0119] 342: Third negative end connector

[0120] 343: Fourth negative end connector

[0121] 344: Fifth negative end connector

[0122] 345: 6th Negative End Connector

[0123] 346: First negative electrode plate

[0124] 346G: Negative end connector

[0125] 347: Second negative electrode plate

[0126] 347G: Adjacent connection part

[0127] 348: Third negative electrode plate

[0128] 349: Fourth negative electrode plate

[0129] 350: First Conductor Plate

[0130] 351: Second Conductor Plate

[0131] 352: Third Conductor Plate

[0132] 353: Fourth Conductor Plate

[0133] 354: Intermediate connection terminal

[0134] 355: Positive terminal

[0135] 355L: Left positive terminal

[0136] 355R: Right positive terminal.

Claims

1. A semiconductor device, characterized in that, The semiconductor device has multiple upper and lower arm circuit elements. Each of the plurality of upper and lower arm circuits has: A first circuit body formed by sandwiching a first semiconductor element between a first conductor and a second conductor; and The second circuit body is formed by sandwiching the second semiconductor element between the third and fourth conductors. The arrangement direction of the first circuit body and the second circuit body is designated as the first direction, and the plurality of upper and lower arm circuits are respectively adjacent along a second direction orthogonal to the first direction. The semiconductor device includes: A plurality of first DC terminals, connected to the second circuit body, extending in the first direction, and disposed on both sides of the first circuit body in the second direction; and A plurality of second DC terminals, which are connected to the first circuit body, are arranged between the first DC terminals. At least one of the first DC terminals has an adjacent connection portion that connects adjacent second circuit bodies.

2. The semiconductor device according to claim 1, characterized in that, The second circuit body is the lower arm circuit. The first DC terminal is the negative terminal.

3. The semiconductor device according to claim 2, characterized in that, The semiconductor device also includes: An intermediate connecting portion that connects the second conductor and the third conductor; and The negative current path connecting the fourth conductor to the first DC terminal. The intermediate connecting portion is sandwiched between the negative end connecting portions from both sides of the second direction.

4. The semiconductor device according to claim 1, characterized in that, The first DC terminal and the second DC terminal are composed of components different from those in the upper and lower arm circuit bodies. The first DC terminal is connected to the upper and lower arm circuit bodies, and the second DC terminal is connected to the upper and lower arm circuit bodies respectively via bonding materials.

5. The semiconductor device according to claim 2, characterized in that, The second DC terminals are interconnected.

6. The semiconductor device according to claim 1, characterized in that, The first conductor has a positive terminal connection. The second DC terminal is interconnected with the positive terminal.

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