Electrode structure, light emitting diode chip and preparation method of electrode structure
By employing a multilayer electrode structure with Cr, Al, Ti, Pt, Ni, and Au layers in the light-emitting diode chip, the problem of electrode structure affecting the fabrication yield in the prior art has been solved, and a higher chip yield has been achieved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- HC SEMITEK ZHEJIANG CO LTD
- Filing Date
- 2025-11-19
- Publication Date
- 2026-04-14
AI Technical Summary
The stacking configuration of existing electrode structures affects the fabrication yield of LED chips, and there is room for improvement.
A multilayer electrode structure with specific thickness and materials, including the stacking of Cr, Al, Ti, Pt, Ni and Au layers, is used to improve the strength and stability of the electrode structure by adjusting the thickness of each layer and the vapor deposition process.
The yield of LED chip fabrication was improved, with the average yield increasing from 97.43% to 98.38%.
Smart Images
Figure CN121865769A_ABST
Abstract
Description
Technical Field
[0001] This disclosure belongs to the field of semiconductor technology, and specifically relates to an electrode structure, a light-emitting diode chip, and a method for fabricating the electrode structure. Background Technology
[0002] Electrode structure is an important component of light-emitting diode (LED) chips, and it is mainly used in N-type and P-type electrodes.
[0003] In related technologies, the electrode structure is a stacked structure formed by stacking multiple metals together.
[0004] The stacking configuration of the electrode structure is crucial to the fabrication yield of the light-emitting diode chip. Summary of the Invention
[0005] This disclosure provides an electrode structure, a light-emitting diode (LED) chip, and a method for fabricating the electrode structure, which can improve the fabrication yield of LED chips. The technical solution is as follows: In a first aspect, embodiments of this disclosure provide an electrode structure comprising a first sublayer, a second sublayer, a third sublayer, a fourth sublayer, a fifth sublayer, a sixth sublayer, a seventh sublayer, an eighth sublayer, and a ninth sublayer stacked sequentially. The first sublayer is a Cr layer, the second sublayer is an Al layer, the third sublayer is a Ti layer, the fourth, sixth and eighth sublayers are Pt layers, the fifth and seventh sublayers are Ni layers, and the ninth sublayer is an Au layer.
[0006] In another implementation of this disclosure, the thickness of the first sublayer is 15~25 Å; The thickness of the second sublayer is 800~1200 Å; The thickness of the third sublayer is 1000~1400 Å; The thickness of the fourth sublayer is 800~1200 Å; The thickness of the fifth sublayer is 1300~1700 Å; The thickness of the sixth sublayer is 800~1200 Å; The thickness of the seventh sublayer is 1300~1700 Å; The thickness of the eighth sublayer is 800~1200 Å; The thickness of the ninth sublayer is 15000~19000 Å.
[0007] Secondly, embodiments of this disclosure provide a light-emitting diode chip, including: an epitaxial layer, and a first electrode and a second electrode located on one side of the epitaxial layer; The first electrode is electrically connected to the N-type semiconductor layer of the epitaxial layer, and the second electrode is electrically connected to the P-type semiconductor layer of the epitaxial layer. At least one of the first electrode and the second electrode is the electrode structure described in the first aspect.
[0008] Thirdly, this disclosure provides a method for preparing an electrode structure, the method comprising: The first sublayer, second sublayer, third sublayer, fourth sublayer, fifth sublayer, sixth sublayer, seventh sublayer, eighth sublayer, and ninth sublayer are prepared sequentially. Wherein, the first sub-layer is a Cr layer, the second sub-layer is an Al layer, the third sub-layer is a Ti layer, the fourth, sixth and eighth sub-layers are Pt layers, the fifth and seventh sub-layers are Ni layers, and the ninth sub-layer is an Au layer.
[0009] In another implementation of this disclosure, the preparation of the first sub-layer includes: Start the electron gun and bring it to 1-2% of its rated power in 20-40 seconds; The electron gun is maintained at 1-2% of its rated power for 100-140 seconds. Turn on the evaporation source and deposit a Cr layer at a rate of 0.2~0.4 Å / s.
[0010] In yet another implementation of this disclosure, the preparation of the second sub-layer includes: Start the electron gun and bring it to 10-20% of its rated power in 20-40 seconds; The electron gun is maintained at 10-20% of its rated power for 20-40 seconds. The electron gun reaches 20-40% of its rated power in 5-15 seconds; The electron gun is maintained at 20-40% of its rated power for 20-40 seconds. The electron gun reaches 13-19% of its rated power in 5-15 seconds; Turn on the evaporation source and deposit an Al layer at a rate of 0.8~1.2 Å / s.
[0011] In another implementation of this disclosure, the preparation of the third sublayer includes: Start the electron gun and bring it to 5-15% of its rated power in 20-40 seconds; The electron gun is maintained at 5-15% of its rated power for 20-40 seconds. The electron gun reaches 10-20% of its rated power in 5-15 seconds; The electron gun is maintained at 10-20% of its rated power for 70-110 seconds. Turn on the evaporation source and deposit a Ti layer at a rate of 0.8~1.2 Å / s.
[0012] In another implementation of this disclosure, the preparation of the fourth sublayer and the sixth sublayer includes: Start the electron gun and bring it to 10-20% of its rated power in 20-40 seconds; The electron gun is maintained at 10-20% of its rated power for 20-40 seconds. The electron gun reaches 20-30% of its rated power in 5-15 seconds; The electron gun is maintained at 20-30% of its rated power for 10-30 seconds. The electron gun reaches 15-25% of its rated power in 5-15 seconds; Turn on the evaporation source and deposit a Pt layer at a rate of 0.8~1.2 Å / s.
[0013] In another implementation of this disclosure, the preparation of the fifth sublayer and the seventh sublayer includes: Start the electron gun and bring it to 10-20% of its rated power in 20-40 seconds; The electron gun is maintained at 10-20% of its rated power for 20-40 seconds. The electron gun reaches 20-30% of its rated power in 5-15 seconds; The electron gun is maintained at 20-30% of its rated power for 10-30 seconds. The electron gun reaches 5-15% of its rated power in 5-15 seconds; Turn on the evaporation source and deposit a Ni layer at a rate of 0.8~1.2 Å / s.
[0014] In yet another implementation of this disclosure, the preparation of the eighth sublayer includes: Start the electron gun and bring it to 10-20% of its rated power in 20-40 seconds; The electron gun is maintained at 10-20% of its rated power for 20-40 seconds. The electron gun reaches 20-30% of its rated power in 5-15 seconds; The electron gun is maintained at 20-30% of its rated power for 10-30 seconds. The electron gun reaches 15-25% of its rated power in 5-15 seconds; Turn on the evaporation source and deposit a Pt layer at a rate of 0.8~1.2 Å / s.
[0015] The beneficial effects of the technical solutions provided in this disclosure are: The electrode structure provided in this embodiment includes a first sublayer, a second sublayer, a third sublayer, a fourth sublayer, a fifth sublayer, a sixth sublayer, a seventh sublayer, an eighth sublayer, and a ninth sublayer stacked sequentially. Among these sublayers, the first sublayer is a Cr layer, which has good metal adhesion and serves as an adhesion layer between the Cr and Al layers in subsequent processes. The second sublayer is an Al layer, which has good metal reflectivity and conductivity and serves as a reflective and conductive layer. The third sublayer is a Ti layer, which has high metal strength and can serve as a protective layer for the Cr and Al layers. The fourth, sixth, and eighth sublayers are Pt layers, and the fifth and seventh sublayers are Ni layers. Ni metal has high strength and can serve as a protective layer for the Cr and Al layers. However, due to its high stress characteristics, it should not be too thick. A Pt layer is used for encapsulation, utilizing the stability of Pt metal in air and humid environments, as well as its good electrical and thermal conductivity, to protect the Ti and Ni layers. The ninth sub-layer is an Au layer, which has superior properties and is corrosion resistant. Therefore, as the final metal layer, it requires a thicker metal film to completely cover the remaining metal layers below.
[0016] In other words, the electrode structure provided in this embodiment of the present disclosure, through the superposition of Pt and Ni layers, can effectively improve the strength of the electrode structure, thereby improving the fabrication yield of the light-emitting diode chip. Attached Figure Description
[0017] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0018] Figure 1 This is a schematic diagram of an electrode structure provided in an embodiment of this disclosure; Figure 2 This is a yield distribution diagram provided in the embodiments of this disclosure; Figure 3 This is a schematic diagram of the structure of a light-emitting diode chip provided in an embodiment of this disclosure; Figure 4 This is a flowchart of a method for preparing an electrode structure according to an embodiment of this disclosure.
[0019] The symbols in the diagram represent the following meanings: 10. First sub-layer; 20. Second sub-layer; 30. Third sub-layer; 40. Fourth sub-layer; 50. Fifth sub-layer; 60. Sixth sub-layer; 70. Seventh sub-layer; 80. Eighth sub-layer; 90. Ninth sub-layer; 100, Epitaxial layer; 200, First electrode; 300, Second electrode. Detailed Implementation
[0020] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.
[0021] This disclosure provides an electrode structure, such as... Figure 1 As shown, the electrode structure includes: a first sublayer 10, a second sublayer 20, a third sublayer 30, a fourth sublayer 40, a fifth sublayer 50, a sixth sublayer 60, a seventh sublayer 70, an eighth sublayer 80, and a ninth sublayer 90 stacked sequentially.
[0022] Among them, the first sublayer 10 is a Cr layer, the second sublayer 20 is an Al layer, the third sublayer 30 is a Ti layer, the fourth sublayer 40, the sixth sublayer 60 and the eighth sublayer 80 are Pt layers, the fifth sublayer 50 and the seventh sublayer 70 are Ni layers, and the ninth sublayer 90 is an Au layer.
[0023] The electrode structure provided in this embodiment includes a first sublayer 10, a second sublayer 20, a third sublayer 30, a fourth sublayer 40, a fifth sublayer 50, a sixth sublayer 60, a seventh sublayer 70, an eighth sublayer 80, and a ninth sublayer 90 stacked sequentially. Among these sublayers, the first sublayer 10 is a Cr layer, which has good metal adhesion and serves as an adhesion layer between the metal layers in subsequent processes. The second sublayer 20 is an Al layer, which has good metal reflectivity and conductivity and serves as a reflective and conductive layer. The third sublayer 30 is a Ti layer, which has high metal strength and can serve as a protective layer for the Cr and Al layers. The fourth, sixth, and eighth sublayers are Pt layers, and the fifth, fifth, and seventh sublayers are Ni layers. Ni has high metal strength and can serve as a protective layer for the Cr and Al layers. However, due to its high stress characteristics, its thickness should not be too thick. It is encapsulated with a Pt layer, utilizing the stability of Pt metal in air and humid environments, as well as its good electrical and thermal conductivity, to protect the Ti and Ni layers. The ninth sub-layer 90 is an Au layer, which has superior properties and is corrosion-resistant. Therefore, as the final metal layer, it requires a thicker metal film to completely encapsulate the remaining metal layers below.
[0024] In other words, the electrode structure provided in this embodiment, through the superposition of Pt and Ni layers, can effectively improve the strength of the electrode structure, thereby improving the fabrication yield of the light-emitting diode chip. In this embodiment, the thickness of the first sublayer 10 is 15~25 Å, the thickness of the second sublayer 20 is 800~1200 Å, the thickness of the third sublayer 30 is 1000~1400 Å, the thickness of the fourth sublayer 40 is 800~1200 Å, the thickness of the fifth sublayer 50 is 1300~1700 Å, the thickness of the sixth sublayer 60 is 800~1200 Å, the thickness of the seventh sublayer 70 is 1300~1700 Å, the thickness of the eighth sublayer 80 is 800~1200 Å, and the thickness of the ninth sublayer 90 is 15000~19000 Å.
[0025] In this embodiment, since the thickness of the Au layer is relatively redundant, the thickness of each sub-layer is designed in this way. By reducing the thickness of the Au layer to a certain extent, the thickness of the Pt and Ni layers is increased, thereby effectively improving the strength of the electrode structure.
[0026] A comparative experiment was conducted between the electrode structure provided in the embodiments of this disclosure and the electrode structure in related technologies, and the following results were obtained: Figure 2 The yield distribution chart is shown.
[0027] In this yield distribution graph, the vertical axis represents the yield, and the horizontal axis represents the epitaxial wafer number. In this control experiment, 25 epitaxial wafers with the same wavelength, voltage, and epitaxial photoluminescence value were selected, and their electrical parameters were measured at 60mA for comparison. The yield distribution graph shows that the average yield of the electrode structure provided in this embodiment is 98.38%, while the average yield of electrode structures in related technologies is 97.43%.
[0028] Figure 3 This is a schematic diagram of the structure of a light-emitting diode chip provided in an embodiment of this disclosure, combined with... Figure 3 In this embodiment, the light-emitting diode chip includes an epitaxial layer 100, and a first electrode 200 and a second electrode 300 located on one side of the epitaxial layer 100. The first electrode 200 is electrically connected to the N-type semiconductor layer of the epitaxial layer 100, and the second electrode 300 is electrically connected to the P-type semiconductor layer of the epitaxial layer 100. At least one of the first electrode 200 and the second electrode 300 is... Figure 1 The electrode structure shown.
[0029] In the above implementation, both the first electrode 200 and the second electrode 300 can be... Figure 1 The electrode structure shown can also be either the first electrode 200 or the second electrode 300. Figure 1 The electrode structure is shown. Because this LED chip includes... Figure 1 The electrode structure shown indicates that the light-emitting diode chip possesses... Figure 1 The full benefits of the electrode structure shown will not be elaborated here.
[0030] Figure 4 This is a flowchart illustrating a method for fabricating an electrode structure according to an embodiment of the present disclosure, in conjunction with... Figure 4 In this embodiment, the preparation method includes: Step 401: Prepare the first sublayer 10, such that the thickness of the first sublayer 10 is 15~25 Å.
[0031] For example, the thickness of the first sublayer 10 is 20 Å.
[0032] In this embodiment, step 401 includes the following steps: Step 4011: Start the electron gun and bring it to 1-2% of its rated power in 20-40 seconds.
[0033] For example, 1.5% of the rated power is achieved in 30 seconds.
[0034] Step 4012: Maintain the electron gun at 1-2% of its rated power for 100-140 seconds.
[0035] For example, it is maintained for 120 seconds at 1.5% of the rated power.
[0036] Step 4013: Turn on the evaporation source and deposit the Cr layer at a rate of 0.2~0.4 Å / s.
[0037] For example, a Cr layer is deposited at a rate of 0.3 Å / s.
[0038] Step 402: Prepare the second sublayer 20, the thickness of which is 800~1200 Å.
[0039] For example, the thickness of the second sublayer 20 is 1000 Å.
[0040] In this embodiment, step 402 includes the following steps: Step 4021: Start the electron gun and bring it to 10-20% of its rated power in 20-40 seconds.
[0041] For example, 15% of the rated power is reached in 30 seconds.
[0042] Step 4022: Maintain the electron gun at 10-20% of its rated power for 20-40 seconds.
[0043] For example, it is maintained at 15% of the rated power for 30 seconds.
[0044] Step 4023: Bring the electron gun to 20-40% of its rated power in 5-15 seconds.
[0045] For example, 30% of the rated power is reached in 10 seconds.
[0046] Step 4024: Maintain the electron gun at 20-40% of its rated power for 20-40 seconds.
[0047] For example, maintain at 20-40% of rated power for 30 seconds.
[0048] Step 4025: Bring the electron gun to 13-19% of its rated power in 5-15 seconds.
[0049] For example, 16% of the rated power is achieved in 10 seconds.
[0050] Step 4026: Turn on the evaporation source and deposit the Al layer at a rate of 0.8~1.2 Å / s.
[0051] For example, an Al layer is deposited at a rate of 1 Å / s.
[0052] Step 403: Prepare the third sublayer 30, the thickness of which is 1000~1400 Å.
[0053] For example, the thickness of the third sublayer 30 is 1200 Å.
[0054] In this embodiment, step 403 includes the following steps: Step 4031: Start the electron gun and bring it to 5-15% of its rated power within 20-40 seconds.
[0055] For example, 10% of the rated power is reached in 30 seconds.
[0056] Step 4032: Maintain the electron gun at 5-15% of its rated power for 20-40 seconds.
[0057] For example, it is maintained at 10% of the rated power for 30 seconds.
[0058] Step 4033: Bring the electron gun to 10-20% of its rated power in 5-15 seconds.
[0059] For example, 15% of the rated power is reached in 10 seconds.
[0060] Step 4034: Maintain the electron gun at 10-20% of its rated power for 70-110 seconds.
[0061] For example, it is maintained at 15% of the rated power for 90 seconds.
[0062] Step 4035: Turn on the evaporation source and deposit the Ti layer at a rate of 0.8~1.2 Å / s.
[0063] For example, a Ti layer is deposited at a rate of 1 Å / s.
[0064] Step 404: Prepare the fourth sublayer 40, the thickness of which is 800~1200 Å.
[0065] For example, the thickness of the fourth sublayer 40 is 1000 Å.
[0066] In this embodiment, step 404 includes the following steps: Step 4041: Start the electron gun and bring it to 10-20% of its rated power in 20-40 seconds.
[0067] For example, 15% of the rated power is reached in 30 seconds.
[0068] Step 4042: Maintain the electron gun at 10-20% of its rated power for 20-40 seconds.
[0069] For example, it is maintained at 15% of the rated power for 30 seconds.
[0070] Step 4043: Bring the electron gun to 20-30% of its rated power in 5-15 seconds.
[0071] For example, 25% of the rated power is reached in 10 seconds.
[0072] Step 4044: Maintain the electron gun at 20-30% of its rated power for 10-30 seconds.
[0073] For example, it is maintained at 25% of the rated power for 20 seconds.
[0074] Step 4045: Bring the electron gun to 15-25% of its rated power in 5-15 seconds.
[0075] For example, 20% of the rated power is reached in 10 seconds.
[0076] Step 4046: Turn on the evaporation source and deposit a Pt layer at a rate of 0.8~1.2 Å / s.
[0077] For example, a Pt layer is deposited at a rate of 1 Å / s.
[0078] Step 405: Prepare the fifth sublayer 50, the thickness of which is 1300~1700 Å.
[0079] For example, the thickness of the fifth sublayer 50 is 1500 Å.
[0080] In this embodiment, step 405 includes the following steps: Step 4051: Start the electron gun and bring it to 10-20% of its rated power in 20-40 seconds.
[0081] For example, 15% of the rated power is reached in 30 seconds.
[0082] Step 4052: Maintain the electron gun at 10-20% of its rated power for 20-40 seconds.
[0083] For example, it is maintained at 15% of the rated power for 30 seconds.
[0084] Step 4053: Bring the electron gun to 20-30% of its rated power in 5-15 seconds.
[0085] For example, 25% of the rated power is reached in 10 seconds.
[0086] Step 4054: Maintain the electron gun at 20-30% of its rated power for 10-30 seconds.
[0087] For example, it is maintained at 25% of the rated power for 20 seconds.
[0088] Step 4055: Bring the electron gun to 5-15% of its rated power in 5-15 seconds.
[0089] For example, 10% of the rated power is reached in 10 seconds.
[0090] Step 4056: Turn on the evaporation source and deposit the Ni layer at a rate of 0.8~1.2 Å / s.
[0091] For example, a Ni layer is deposited at a rate of 1 Å / s.
[0092] Step 406: Prepare the sixth sublayer 60, the thickness of which is 800~1200 Å.
[0093] For example, the thickness of the sixth sublayer 60 is 1000 Å.
[0094] In this embodiment, step 406 includes the following steps: Step 4061: Start the electron gun and bring it to 10-20% of its rated power in 20-40 seconds.
[0095] For example, 15% of the rated power is reached in 30 seconds.
[0096] Step 4062: Maintain the electron gun at 10-20% of its rated power for 20-40 seconds.
[0097] For example, it is maintained at 15% of the rated power for 30 seconds.
[0098] Step 4063: Bring the electron gun to 20-30% of its rated power in 5-15 seconds.
[0099] For example, 25% of the rated power is reached in 10 seconds.
[0100] Step 4064: Maintain the electron gun at 20-30% of its rated power for 10-30 seconds.
[0101] For example, it is maintained at 25% of the rated power for 20 seconds.
[0102] Step 4065: Bring the electron gun to 15-25% of its rated power in 5-15 seconds.
[0103] For example, 20% of the rated power is reached in 10 seconds.
[0104] Step 4066: Turn on the evaporation source and deposit the Pt layer at a rate of 0.8~1.2 Å / s.
[0105] For example, a Pt layer is deposited at a rate of 1 Å / s.
[0106] Step 407: Prepare the seventh sublayer 70, the thickness of which is 1300~1700 Å.
[0107] For example, the thickness of the seventh sublayer 70 is 1500 Å.
[0108] In this embodiment, step 407 includes the following steps: Step 4071: Start the electron gun and bring it to 10-20% of its rated power in 20-40 seconds.
[0109] For example, 15% of the rated power is reached in 30 seconds.
[0110] Step 4072: Maintain the electron gun at 10-20% of its rated power for 20-40 seconds.
[0111] For example, it is maintained at 15% of the rated power for 30 seconds.
[0112] Step 4073: Bring the electron gun to 20-30% of its rated power in 5-15 seconds.
[0113] For example, 25% of the rated power is reached in 10 seconds.
[0114] Step 4074: Maintain the electron gun at 20-30% of its rated power for 10-30 seconds.
[0115] For example, it is maintained at 25% of the rated power for 20 seconds.
[0116] Step 4075: Bring the electron gun to 5-15% of its rated power in 5-15 seconds.
[0117] For example, 10% of the rated power is reached in 10 seconds.
[0118] Step 4076: Turn on the evaporation source and deposit the Ni layer at a rate of 0.8~1.2 Å / s.
[0119] For example, a Ni layer is deposited at a rate of 1 Å / s.
[0120] Step 408: Prepare the eighth sublayer 80, with a thickness of 800~1200 Å.
[0121] For example, the thickness of the eighth sublayer 80 is 1000 Å.
[0122] In this embodiment, step 408 includes the following steps: Step 4081: Start the electron gun and bring it to 10-20% of its rated power in 20-40 seconds; For example, 15% of the rated power is reached in 30 seconds.
[0123] Step 4082: Maintain the electron gun at 10-20% of its rated power for 20-40 seconds.
[0124] For example, it is maintained at 15% of the rated power for 30 seconds.
[0125] Step 4083: Bring the electron gun to 20-30% of its rated power in 5-15 seconds.
[0126] For example, 25% of the rated power is reached in 10 seconds.
[0127] Step 4084: Maintain the electron gun at 20-30% of its rated power for 10-30 seconds.
[0128] For example, it is maintained at 25% of the rated power for 20 seconds.
[0129] Step 4085: Bring the electron gun to 15-25% of its rated power in 5-15 seconds.
[0130] For example, 20% of the rated power is reached in 10 seconds.
[0131] Step 4086: Turn on the evaporation source and deposit the Pt layer at a rate of 0.8~1.2 Å / s.
[0132] For example, a Pt layer is deposited at a rate of 1 Å / s.
[0133] Step 409: Prepare the ninth sublayer 90, with a thickness of 15000~19000 Å.
[0134] For example, the thickness of the ninth sublayer 90 is 17000 Å.
[0135] In this embodiment, step 409 includes the following steps: Step 4091: Start the electron gun and bring it to 3-7% of its rated power in 20-40 seconds.
[0136] For example, 5% of the rated power is reached in 30 seconds.
[0137] Step 4092: Maintain the electron gun at 3-7% of its rated power for 20-40 seconds.
[0138] For example, it is maintained at 5% of the rated power for 30 seconds.
[0139] Step 4093: Bring the electron gun to 6-10% of its rated power in 5-15 seconds.
[0140] For example, 8% of the rated power is achieved in 10 seconds.
[0141] Step 4094: Maintain the electron gun at 6-10% of its rated power for 100-140 seconds.
[0142] For example, it is maintained for 120 seconds at 8% of the rated power.
[0143] Step 4095: Bring the electron gun to 5-15% of its rated power in 5-15 seconds.
[0144] For example, 10% of the rated power is reached in 10 seconds.
[0145] Step 4096: Turn on the evaporation source and deposit an Au layer at a rate of 3~7 Å / s.
[0146] For example, an Au layer is deposited at a rate of 5 Å / s.
[0147] Step 4010: Anneal the electrode structure.
[0148] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” “third,” and similar terms used in this patent application specification and claims do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an” or “a” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “comprising” or “including” and similar terms mean that the elements or objects preceding “comprising” or “including” encompass the elements or objects listed following “comprising” or “including” and their equivalents, and do not exclude other elements or objects. The terms “connected” or “linked” and similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” “right,” etc., are used only to indicate relative positional relationships; when the absolute position of the described objects changes, the relative positional relationship may also change accordingly.
[0149] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.
Claims
1. An electrode structure, characterized in that, Including the first sub-layer (10), the second sub-layer (20), the third sub-layer (30), the fourth sub-layer (40), the fifth sub-layer (50), the sixth sub-layer (60), the seventh sub-layer (70), the eighth sub-layer (80), and the ninth sub-layer (90) stacked in sequence; The first sublayer (10) is a Cr layer, the second sublayer (20) is an Al layer, the third sublayer (30) is a Ti layer, the fourth sublayer (40), the sixth sublayer (60) and the eighth sublayer (80) are Pt layers, the fifth sublayer (50) and the seventh sublayer (70) are Ni layers, and the ninth sublayer (90) is an Au layer.
2. The electrode structure according to claim 1, characterized in that, The thickness of the first sublayer (10) is 15~25 Å; The thickness of the second sublayer (20) is 800~1200 Å; The thickness of the third sublayer (30) is 1000~1400 Å; The thickness of the fourth sublayer (40) is 800~1200 Å; The thickness of the fifth sublayer (50) is 1300~1700 Å; The thickness of the sixth sublayer (60) is 800~1200 Å; The thickness of the seventh sublayer (70) is 1300~1700 Å; The thickness of the eighth sublayer (80) is 800~1200 Å; The thickness of the ninth sublayer (90) is 15000~19000 Å.
3. A light-emitting diode chip, characterized in that, include: An epitaxial layer, and a first electrode and a second electrode located on one side of the epitaxial layer; The first electrode is electrically connected to the N-type semiconductor layer of the epitaxial layer, and the second electrode is electrically connected to the P-type semiconductor layer of the epitaxial layer. At least one of the first electrode and the second electrode is the electrode structure described in claim 1 or 2.
4. A method for preparing an electrode structure, characterized in that, The preparation method includes: The first sublayer (10), the second sublayer (20), the third sublayer (30), the fourth sublayer (40), the fifth sublayer (50), the sixth sublayer (60), the seventh sublayer (70), the eighth sublayer (80), and the ninth sublayer (90) were prepared sequentially. The first sublayer (10) is a Cr layer, the second sublayer (20) is an Al layer, the third sublayer (30) is a Ti layer, the fourth sublayer (40), the sixth sublayer (60) and the eighth sublayer (80) are Pt layers, the fifth sublayer (50) and the seventh sublayer (70) are Ni layers, and the ninth sublayer (90) is an Au layer.
5. The preparation method according to claim 4, characterized in that, The preparation of the first sublayer (10) includes: Start the electron gun and bring it to 1-2% of its rated power in 20-40 seconds; The electron gun is maintained at 1-2% of its rated power for 100-140 seconds. Turn on the evaporation source and deposit a Cr layer at a rate of 0.2~0.4 Å / s.
6. The preparation method according to claim 4, characterized in that, The preparation of the second sublayer (20) includes: Start the electron gun and bring it to 10-20% of its rated power in 20-40 seconds; The electron gun is maintained at 10-20% of its rated power for 20-40 seconds. The electron gun reaches 20-40% of its rated power in 5-15 seconds; The electron gun is maintained at 20-40% of its rated power for 20-40 seconds. The electron gun reaches 13-19% of its rated power in 5-15 seconds; Turn on the evaporation source and deposit an Al layer at a rate of 0.8~1.2 Å / s.
7. The preparation method according to claim 4, characterized in that, The preparation of the third sublayer (30) includes: Start the electron gun and bring it to 5-15% of its rated power in 20-40 seconds; The electron gun is maintained at 5-15% of its rated power for 20-40 seconds. The electron gun reaches 10-20% of its rated power in 5-15 seconds; The electron gun is maintained at 10-20% of its rated power for 70-110 seconds. Turn on the evaporation source and deposit a Ti layer at a rate of 0.8~1.2 Å / s.
8. The preparation method according to claim 4, characterized in that, The preparation of the fourth sublayer (40) and the sixth sublayer (60) includes: Start the electron gun and bring it to 10-20% of its rated power in 20-40 seconds; The electron gun is maintained at 10-20% of its rated power for 20-40 seconds. The electron gun reaches 20-30% of its rated power in 5-15 seconds; The electron gun is maintained at 20-30% of its rated power for 10-30 seconds. The electron gun reaches 15-25% of its rated power in 5-15 seconds; Turn on the evaporation source and deposit a Pt layer at a rate of 0.8~1.2 Å / s.
9. The preparation method according to claim 4, characterized in that, The preparation of the fifth sublayer (50) and the seventh sublayer (70) includes: Start the electron gun and bring it to 10-20% of its rated power in 20-40 seconds; The electron gun is maintained at 10-20% of its rated power for 20-40 seconds. The electron gun reaches 20-30% of its rated power in 5-15 seconds; The electron gun is maintained at 20-30% of its rated power for 10-30 seconds. The electron gun reaches 5-15% of its rated power in 5-15 seconds; Turn on the evaporation source and deposit a Ni layer at a rate of 0.8~1.2 Å / s.
10. The preparation method according to claim 4, characterized in that, The preparation of the eighth sublayer (80) includes: Start the electron gun and bring it to 10-20% of its rated power in 20-40 seconds; The electron gun is maintained at 10-20% of its rated power for 20-40 seconds. The electron gun reaches 20-30% of its rated power in 5-15 seconds; The electron gun is maintained at 20-30% of its rated power for 10-30 seconds. The electron gun reaches 15-25% of its rated power in 5-15 seconds; Turn on the evaporation source and deposit a Pt layer at a rate of 0.8~1.2 Å / s.