Method for measuring dislocation density of diamond single crystal using cathodoluminescence spectroscopy

By constructing the integrated intensity ratio of the A-band and the free exciton emission peak using cathodoluminescence spectroscopy, the destructive and quantitative problems of existing methods for measuring dislocation density in diamond single crystals are solved, achieving non-destructive, rapid, and accurate dislocation density detection, applicable to a variety of semiconductor materials.

CN121877637BActive Publication Date: 2026-07-03INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI +1
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Filing Date
2026-03-23
Publication Date
2026-07-03

AI Technical Summary

Technical Problem

Existing methods for determining the dislocation density of diamond single crystals suffer from destructive testing, low throughput, limited efficiency, and large subjective errors. Cathodoluminescence spectroscopy lacks a standardized quantitative calibration process and is easily affected by test conditions, making it difficult to achieve accurate quantitative detection.

Method used

Using cathodoluminescence spectroscopy, drawing on the idea of ​​colorimetry, and utilizing the intrinsic free exciton luminescence of diamond as an intrinsic reference signal, a linear quantitative model is established by constructing the integral intensity ratio of the A-band luminescence peak and the free exciton luminescence peak, thus achieving non-destructive and rapid dislocation density determination.

Benefits of technology

It enables non-destructive and precise quantitative detection of dislocation density in diamond single crystals, improving detection efficiency, reducing costs, and is suitable for high-value samples. It also has good test reproducibility and applicability, and is applicable to a variety of semiconductor materials.

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Abstract

This invention provides a method for determining the dislocation density of diamond single crystals using cathodoluminescence spectroscopy, which can be applied to the field of semiconductor material characterization and defect detection. This method draws upon and develops upon colorimetric methods based on ultraviolet light intensity, utilizing the idea of ​​single measurement and quantitative analysis based on different peak ratios. It also incorporates a decoupled architecture of "destructive calibration + non-destructive measurement." First, at least five diamond single crystal calibration samples with gradient dislocation densities are selected. Cathodoluminescence spectra are acquired under low temperature and high vacuum conditions. The integrated intensity I of the A-band emission peak related to dislocations is extracted through multi-peak fitting. A and the integral intensity I of the free exciton emission peak FE Calculate the ratio R=I A / I FE Subsequently, the calibration sample was subjected to hydrogen-oxygen dry etching, and the surface dislocation density N was obtained by statistically analyzing the etching pits. The proportionality coefficient k was obtained by linear fitting with N as the ordinate and R as the abscissa. For the sample to be tested, the spectrum was collected under the same conditions and the ratio R was calculated. Substituting this value into the model N=k·R, the surface dislocation density can be quantitatively obtained.
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