Superconducting quantum computing room temperature amplifier
By designing an isolation cavity and a multi-stage amplification module within the Kovar metal cavity, and combining it with a double-sided power supply device, the problems of large size and high noise in existing room-temperature quantum amplifiers are solved, achieving low-noise, high-gain quantum bit signal amplification, which is suitable for quantum computing systems with high integration and stability requirements.
CN121907170BActive Publication Date: 2026-06-26HEFEI NATIONAL LABORATORY +1
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- HEFEI NATIONAL LABORATORY
- Filing Date
- 2026-03-26
- Publication Date
- 2026-06-26
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Figure CN121907170B_ABST
Abstract
The application provides a superconducting quantum computing room temperature amplifier applied to the technical field of quantum bit amplification reading. The amplifier comprises: a Kovar metal cavity comprising a plurality of radio frequency isolation cavities which are isolated from each other by a partition wall, are electrically connected via radio frequency transmission beads sintered in the partition wall, and are electrically connected to the plurality of radio frequency isolation cavities in the vertical direction by a plurality of power supply transmission beads sintered in the vertical direction; a multi-stage radio frequency amplification circuit which performs multi-stage amplification processing on a radio frequency signal and outputs a target radio frequency signal; and a double-layer power supply device and circuit which comprises a four-layer PCB and a double-sided power supply device, the four-layer PCB is gold-plated and suspendedly fixed on the inner side wall of the power supply isolation cavity, the double-sided power supply device is distributed on the upper and lower sides thereof, and the multi-stage radio frequency amplification circuit is powered by a plurality of power supply transmission beads which are sintered through the four-layer PCB and the bottom of the plurality of radio frequency isolation cavities.
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