Display device

Abstract

A display device includes: a substrate including a light emitting area and a non-light emitting area; a driving element formed over the substrate; a first connection electrode connected to the driving element; a light emitting element connected to the first connection electrode; and a second connection electrode formed over the light emitting element, where the second connection electrode includes an anti-reflection region corresponding to the non-emission region, and where a first portion of the second connection electrode includes a plurality of layers in the anti-reflection region to distinguish the emission region and the non-emission region, therefore, a low-cost and high-quality display device is provided.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0145945, filed in Korea on October 23, 2024, the entire contents of which are expressly incorporated herein by reference. Technical Field

[0003] This invention relates to a display device. Background Technology

[0004] The display device may include a light-emitting area and a non-light-emitting area, and may also include multiple pixels, each pixel including a light-emitting element and various circuit elements for driving the light-emitting element. In this case, when external light is reflected by the various material layers constituting the light-emitting element and the circuit elements, the user of the display device may have difficulty recognizing the information displayed on the display device due to external light.

[0005] To reduce the reflectivity of external light, display devices using related technologies can effectively reduce the reflectivity of external light by using polarizing plates or forming a separate black anti-reflective layer. However, using expensive polarizing plates and forming a separate anti-reflective layer increases the manufacturing cost of the display device. Summary of the Invention

[0006] The problem with related display devices is that, in order to prevent quality degradation in the non-powered state due to rainbow mura caused by reflected light, and image quality degradation due to reflected light, additional optical layers must be formed, thus increasing cost and complicating the structure. Furthermore, in response to higher resolutions, display technology requires techniques that can be implemented even in small pixels, and lower reflectivity is required to prevent reflection of external light. Therefore, this invention provides a display device that can operate at lower cost and lower power by achieving low reflectivity without using polarizing plates and separate anti-reflection layers.

[0007] Embodiments of the present invention can provide a display device having an electrode structure that reduces the reflectivity of reflected external light.

[0008] Therefore, one or more embodiments of the present invention relate to a display device that substantially eliminates one or more problems caused by the limitations and disadvantages of related technologies.

[0009] An embodiment of the present invention provides a display device, comprising: a substrate including a light-emitting region and a non-light-emitting region; a driving element formed on the substrate; a first connection electrode connected to the driving element; a light-emitting element connected to the first connection electrode; and a second connection electrode formed on the light-emitting element, wherein the second connection electrode may include an anti-reflective region corresponding to the non-light-emitting region, and wherein a first portion of the second connection electrode may include multiple layers in the anti-reflective region to distinguish the light-emitting region and the non-light-emitting region.

[0010] An embodiment of the present invention provides a display device, comprising: a substrate including a display area; a driving element formed on the substrate; a first connecting electrode connected to the driving element; a light-emitting element connected to the first connecting electrode; and a second connecting electrode connected to the light-emitting element and distinguishing between a light-emitting area and a non-light-emitting area.

[0011] The second connecting electrode may be formed above the light-emitting element and connected to the light-emitting element.

[0012] The second connecting electrode may include a black anti-reflective region in the non-light-emitting region, and may include multiple layers in the anti-reflective region.

[0013] The second connecting electrode may include a transparent conductive material, and the second connecting electrode may be configured as a single layer of the transparent conductive material in the light-emitting region.

[0014] In the non-light-emitting area, the second connection electrode may include an anti-reflective layer composed of multiple conductive layers, and the transparent conductive material in the light-emitting area may extend and be disposed below the anti-reflective layer composed of the multiple layers.

[0015] The anti-reflective layer minimizes the reflection of external light and appears black by canceling out light due to the difference in refractive index between the multiple layers. The anti-reflective layer may comprise a double layer of translucent film-reflective film or a triple layer of translucent film-transparent film-reflective film in the direction from the outside of the display device toward the substrate.

[0016] The translucent film of the antireflective layer may be an oxide of chromium, molybdenum, titanium and aluminum, and the reflective film may include one of copper, aluminum, silver and gold.

[0017] In other embodiments of the invention, the transparent conductive material may be disposed in the light-emitting region, and the anti-reflective layer may be disposed in the non-light-emitting region and on the transparent conductive material extending from the light-emitting region. The anti-reflective layer may be positioned below the top of the light-emitting element and disposed around the light-emitting element.

[0018] The light-emitting layer of the light-emitting element can be positioned above the anti-reflective layer. The top of the planarization layer surrounding the light-emitting element can be positioned below the top of the light-emitting element.

[0019] Other embodiments of the present invention provide a display device in which an inorganic insulating layer is disposed on and in contact with the second connecting electrode in the light-emitting region, and no inorganic insulating layer is disposed in the non-light-emitting region.

[0020] In the non-light-emitting region where there is no inorganic insulating layer, the second connection electrode may include an anti-reflective layer on the transparent conductive material extending from the light-emitting region.

[0021] The transparent conductive material in the light-emitting region, where the inorganic insulating layer is disposed, and the anti-reflective layer in the non-light-emitting region can have the same composition. The anti-reflective layer in the non-light-emitting region can be a fading layer that is made black by a process according to a different composition ratio than that of the transparent conductive material in the light-emitting region. The different composition ratio can be the ratio of indium to oxygen.

[0022] The antireflective layer, with different component ratios in the non-luminescent areas, can appear black.

[0023] The distinction between the light-emitting region and the non-light-emitting region by the second connecting electrode can be formed through the following steps.

[0024] A driving element can be formed on top of the substrate. A first connection electrode can be formed on top of the driving element and connected to it. A light-emitting element can be formed on top of the first connection electrode. A second connection electrode formed of a transparent conductive material containing indium can be deposited on top of the light-emitting element, and an inorganic insulating layer is formed only in the light-emitting region on the deposited second connection electrode. The inorganic insulating layer can be used as a mask to perform an etching process, such as a hydrogen-containing plasma process, on the second connection electrode in the non-light-emitting region, so that the second connection electrode in the non-light-emitting region can change from transparent to black.

[0025] The upper surface of the inorganic insulating layer in the light-emitting region may have a flat shape.

[0026] In other embodiments, the upper surface of the inorganic insulating layer in the light-emitting region may include a lens shape. The lens shape may include a first lens and a second lens having a smaller size than the first lens. The first lens may be disposed at the center of the light-emitting region, and the second lens may surround the first lens.

[0027] The lens shape can be configured to be symmetrical about the center of the light-emitting area.

[0028] It should be understood that the foregoing general description and the following detailed description are illustrative and intended to provide further explanation of the claimed inventive concept. Attached Figure Description

[0029] The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and form a part of this application, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention. In the drawings:

[0030] Figure 1 This is a view illustrating a schematic configuration of a display device according to an embodiment of the present invention;

[0031] Figure 2 This is a cross-sectional view showing each sub-pixel of the display panel of the display device according to a first embodiment of the present invention;

[0032] Figure 3A and Figure 3B This is a view illustrating the effect of reflected light based on the second connecting electrode in the light-emitting and non-light-emitting regions according to an embodiment of the present invention;

[0033] Figure 4 This is a cross-sectional view showing each sub-pixel of the display panel of the display device according to a second embodiment of the present invention;

[0034] Figure 5 This is a cross-sectional view showing each sub-pixel of the display panel of the display device according to a third embodiment of the present invention;

[0035] Figure 6 This is a cross-sectional view showing each sub-pixel of the display panel of the display device according to a fourth embodiment of the present invention. Detailed Implementation

[0036] In the following, some embodiments of the invention will be described in detail with reference to the exemplary accompanying drawings. When adding reference numerals to components in each drawing, the same components may have as many identical reference numerals as possible, even if they are shown in different drawings. Furthermore, in describing the invention, detailed descriptions may be omitted if it is determined that a specific description of a related known configuration or function may obscure the essential points of the invention. When terms such as "comprising," "having," or "consisting of" are used in this application, additional parts may be added unless "only" is used. When a component is referred to as a singular, a plural case may be included unless specifically and explicitly described.

[0037] Furthermore, when describing components of the present invention, terms such as first, second, A, B, (a), (b), etc., may be used. These terms are intended only to distinguish components from other components, and the nature, order, sequence, or number of components is not limited by these terms.

[0038] In the description of the positional relationship of components, when describing two or more components as "connected" or "joined," it should be understood that two or more components may be directly "connected" or "joined," but two or more components may be "connected" or "joined" by further "inserting" another component. Here, the other component may include one or more of the two or more components that are "connected" or "joined" to each other.

[0039] In descriptions of time-series relationships related to components, operating methods, or manufacturing methods, for example, when time sequence relationships or process sequence relationships are described as “after,” “following,” “after,” or “before,” discontinuous cases may also be included, unless “immediately” or “directly” is used.

[0040] On the other hand, when referring to the numerical values ​​or corresponding information of a component (e.g., level, etc.), even without a separate explicit description, the numerical values ​​or corresponding information can be interpreted as including the range of errors that may occur due to various factors (e.g., process factors, internal or external influences, noise, etc.).

[0041] In the following, various embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0042] Figure 1 This is a view illustrating a schematic configuration of a display device according to an embodiment of the present invention. The display device may be a micro LED (light-emitting diode) display device or a mini LED display device. However, embodiments of the present invention are not limited thereto; in other embodiments, for example, the display device may be an organic light-emitting diode (OLED) display device.

[0043] exist Figure 1In this invention, the display device 100 may include a timing controller TC, a data driver DD, a gate driver GD, and a display panel PN.

[0044] The timing controller TC can generate image data RGB, data control signal DCS, and gate control signal GCS using multiple timing signals (e.g., image signal, data enable signal, horizontal sync signal, vertical sync signal, and clock) transmitted from an external system (e.g., graphics card or TV system). The timing controller TC can then send the generated image data RGB and the generated data control signal DCS to the data driver DD, and can send the generated gate control signal GCS to the gate driver GD.

[0045] The data driver DD can use the image data RGB and data control signal DCS sent from the timing controller TC to generate a data signal (data voltage), and can apply the generated data signal to the data line DL of the display panel PN.

[0046] The gate driver GD can use the gate control signal GCS sent from the timing controller TC to generate a gate signal, and can apply the generated gate signal to the gate line GL of the display panel PN.

[0047] Here, the gate driver GD can be an in-panel gate (GIP) type formed together on a substrate on which gate lines GL, data lines DL and pixels P are formed, and can be set in the non-display area NDA.

[0048] exist Figure 1 In one embodiment, the gate driver GD can be disposed on one side of the display panel PN, but in other embodiments, the two gate drivers can be disposed on opposite sides of the display panel PN.

[0049] The display panel PN may include a display area DA located at its center and a non-display area NDA surrounding the display area DA. The display panel PN can display images using gate signals and data signals. The display panel PN may include multiple pixels P, multiple gate lines GL, and multiple data lines DL disposed in the display area DA.

[0050] Each of the plurality of pixels P may include a sub-pixel SP, which includes a first sub-pixel SP1, a second sub-pixel SP2, and a third sub-pixel SP3. Gate lines GL and data lines DL may intersect each other to define the sub-pixel SP, and each sub-pixel SP may be connected to its corresponding gate line GL and data line DL. For example, the first sub-pixel SP1, the second sub-pixel SP2, and the third sub-pixel SP3 may correspond to a first color, a second color, and a third color, respectively, which may be red, green, and blue, respectively.

[0051] Each sub-pixel SP can include multiple transistors (such as switching transistors, ...). Figure 2 The driving transistor (DT), and the sensing transistor), storage capacitor and Figure 2 Light-emitting diodes (LEDs).

[0052] Figure 2 This is a cross-sectional view showing each sub-pixel of the display panel of the display device according to a first embodiment of the present invention, and will be referred to together with the above. Figure 1 Describe it.

[0053] exist Figure 2 In this process, the light-shielding pattern LS can be disposed in each sub-pixel SP on the substrate 110, and the buffer layer 111 can be disposed on the light-shielding pattern LS substantially throughout the entire substrate 110. The substrate 110 may include a light-emitting area EA and a non-light-emitting area NEA.

[0054] The light-shielding pattern LS can be used to block light incident from the bottom of the substrate 110. For example, the light-shielding pattern LS can be a single layer or multiple layers of a metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or an alloy thereof.

[0055] The buffer layer 111 can be used to prevent moisture or oxygen from penetrating from the outside. For example, the buffer layer 111 can be such as silicon oxide (SiO2) or silicon nitride (SiN). x Single or multiple layers of inorganic insulating materials such as )

[0056] The semiconductor layer ACT can be disposed on the buffer layer 111 corresponding to the light-shielding pattern LS, and the gate insulating layer 112 can be disposed on the semiconductor layer ACT, which can cover the entire substrate 110.

[0057] The semiconductor layer ACT may include an undoped channel region at the center and doped source and drain regions on either side of the channel region. For example, the semiconductor layer ACT may be formed of a polycrystalline semiconductor material such as polycrystalline silicon, or of an oxide semiconductor material such as indium gallium zinc oxide (IGZO), zinc oxide (ZnO), tin oxide (SnO2), copper oxide (Cu2O), nickel oxide (NiO), indium tin zinc oxide (ITZO), and indium aluminum zinc oxide (IAZO).

[0058] For example, the gate insulating layer 112 can be such as silicon oxide (SiO2) or silicon nitride (SiN). x Single or multiple layers of inorganic insulating materials such as )

[0059] The gate electrode GE can be disposed on the gate insulating layer 112 corresponding to the channel region, the first capacitor electrode CST1 can be disposed on the gate insulating layer 112 and spaced apart from the gate electrode GE, and the first interlayer insulating layer 113 can be disposed on the gate electrode GE and the first capacitor electrode CST1, substantially covering the entire substrate 110.

[0060] The gate electrode GE and the first capacitor electrode CST1 can be formed on the same layer from the same material. For example, the gate electrode GE and the first capacitor electrode CST1 can be a single layer or multiple layers of a metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or an alloy thereof.

[0061] For example, the first interlayer insulating layer 113 can be such as silicon oxide (SiO2) or silicon nitride (SiN). x Single or multiple layers of inorganic insulating materials such as )

[0062] The second capacitor electrode CST2 can be disposed on the first interlayer insulating layer 113 corresponding to the first capacitor electrode CST1, and the second interlayer insulating layer 114 can be disposed on the second capacitor electrode CST2 substantially covering the entire substrate 110.

[0063] For example, the second capacitor electrode CST2 can be a single layer or multiple layers of a metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or their alloys.

[0064] For example, the second interlayer insulating layer 114 can be such as silicon oxide (SiO2) or silicon nitride (SiN). x Single or multiple layers of inorganic insulating materials such as )

[0065] The first capacitor electrode CST1, the first interlayer insulating layer 113, and the second capacitor electrode CST2 can constitute a storage capacitor.

[0066] The source electrode SE and the drain electrode DE can be disposed on the second interlayer insulating layer 114 and can be spaced apart from each other.

[0067] The source electrode SE and drain electrode DE can be connected to the source region and drain region of the semiconductor layer ACT, respectively, through contact holes in the second interlayer insulating layer 114, the first interlayer insulating layer 113, and the gate insulating layer 112. The drain electrode DE can be connected to the light-shielding pattern LS through contact holes in the second interlayer insulating layer 114, the first interlayer insulating layer 113, the gate insulating layer 112, and the buffer layer 111.

[0068] The source electrode SE and drain electrode DE can be formed on the same layer from the same material. For example, the source electrode SE and drain electrode DE can be a single layer or multiple layers of a metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or an alloy thereof.

[0069] The semiconductor layer ACT, gate electrode GE, source electrode SE, and drain electrode DE can form a driving element, namely, a driving transistor DT.

[0070] The power line VDD can be disposed on the second interlayer insulating layer 114. The power line VDD can be electrically connected to the first light-emitting element LED together with the driving transistor DT to cause the first light-emitting element LED to emit light. The power line VDD can be formed on the same layer as the source electrode SE and the drain electrode DE, using the same material. For example, the power line VDD can be a single layer or multiple layers of a metallic material such as molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or an alloy thereof, but embodiments of the present invention are not limited thereto.

[0071] An overcoat layer 115 can be disposed on the driving transistor DT and the power line VDD. The overcoat layer 115 can flatten the upper surface of the substrate 110 on which the driving transistor DT is disposed. The overcoat layer 115 can be a single layer or multiple layers, and can be formed, for example, by photoresist or acrylic-based organic materials, but is not limited thereto.

[0072] Multiple reflective electrodes RE can be disposed on the cladding 115 and can be spaced apart from each other. The multiple reflective electrodes RE can electrically connect the first light-emitting element (LED) to the power line VDD and the driving transistor DT, and can also serve as reflectors that reflect light emitted from the first light-emitting element (LED) toward the upper part of the first light-emitting element (LED). The multiple reflective electrodes RE can be formed of a conductive material with relatively high reflectivity and can reflect light emitted from the first light-emitting element (LED) toward the upper part of the first light-emitting element (LED).

[0073] The plurality of reflective electrodes RE may include a first reflective electrode RE1 and a second reflective electrode RE2. The first reflective electrode RE1 can electrically connect the driving transistor DT and the first light-emitting element LED. The first reflective electrode RE1 can be connected to the source electrode SE or drain electrode DE of the driving transistor DT through a contact hole formed in the cover layer 115. In addition, the first reflective electrode RE1 can be electrically connected to the first electrode 124 of the first light-emitting element LED through the first connection electrode CE1.

[0074] The second reflective electrode RE2 can electrically connect the power line VDD and the first light-emitting element LED. The second reflective electrode RE2 can be connected to the power line VDD through a contact hole formed in the cover layer 115, and can be electrically connected to the second electrode 125 of the first light-emitting element LED through the second connection electrode CE2, which will be described later.

[0075] The adhesive layer 116 may be disposed substantially throughout the entire substrate 110 on the plurality of reflective electrodes RE to fix the first light-emitting element LED disposed on the adhesive layer 116. The adhesive layer 116 may be formed of a photocurable adhesive material capable of photocuring. For example, the adhesive layer 116 may be formed of an acrylic-based material including a photosensitizer, but embodiments of the present invention are not limited thereto.

[0076] Multiple first light-emitting elements (LEDs) can be respectively disposed on the adhesive layer 116 in multiple sub-pixels SP. The multiple first light-emitting elements (LEDs) are elements that emit light through current, and may include first light-emitting elements emitting red light, green light, blue light, etc., and their combination can realize various colors of light, including white. For example, the multiple first light-emitting elements (LEDs) can be light-emitting diodes (LEDs) or micro LEDs, but embodiments of the present invention are not limited thereto.

[0077] The first light-emitting element LED may include a first semiconductor layer 121, a first light-emitting layer 122, a second semiconductor layer 123, a first electrode 124, a second electrode 125, and a passivation layer (not shown).

[0078] A first semiconductor layer 121 may be disposed on the adhesive layer 116, and a second semiconductor layer 123 may be disposed on the first semiconductor layer 121. The first semiconductor layer 121 and the second semiconductor layer 123 may be layers formed by doping n-type and p-type impurities into specific materials, respectively. For example, the first semiconductor layer 121 and the second semiconductor layer 123 may be layers in which n-type or p-type impurities are doped into materials such as gallium nitride (GaN), indium aluminum phosphide (InAlP), gallium arsenide (GaAs), etc. Furthermore, p-type impurities may be magnesium, zinc (Zn), or beryllium (Be), and n-type impurities may be silicon (Si), germanium (Ge), or tin (Sn), etc., but are not limited to these.

[0079] A portion of the first semiconductor layer 121 may be configured to protrude beyond the outer side of the second semiconductor layer 123. The first light-emitting element LED may be a lateral light-emitting element, wherein the upper surface of the first semiconductor layer 121 includes a portion overlapping the lower surface of the second semiconductor layer 123 and a portion disposed outside the lower surface of the second semiconductor layer 123. However, the dimensions and shapes of the first semiconductor layer 121 and the second semiconductor layer 123 may be modified in various ways, and are not limited thereto.

[0080] The first light-emitting layer 122 can be disposed between the first semiconductor layer 121 and the second semiconductor layer 123. The first light-emitting layer 122 can receive electrons and holes from the first semiconductor layer 121 and the second semiconductor layer 123 respectively to emit light.

[0081] The first light-emitting layer 122 may be formed of a single quantum well (SQW) or multiple quantum well (MQW) structure, and may be formed, for example, of indium gallium nitride (InGaN) or gallium nitride (GaN), but the embodiments of the present invention are not limited thereto.

[0082] The first electrode 124 may be disposed on the first semiconductor layer 121. The first electrode 124 may be an electrode for electrically connecting the driving transistor DT and the first semiconductor layer 121. In this case, the first semiconductor layer 121 may be a semiconductor layer doped with n-type impurities, and the first electrode 124 may be a cathode. The first electrode 124 may be disposed on the upper surface of the first semiconductor layer 121 exposed from the first light-emitting layer 122 and the second semiconductor layer 123. The first electrode 124 may be formed of a conductive material, such as a transparent conductive material like ITO (indium tin oxide) or IZO (indium zinc oxide) or an opaque conductive material like titanium (Ti), gold (Au), silver (Ag), copper (Cu), or alloys thereof, but embodiments of the present invention are not limited thereto.

[0083] The second electrode 125 can be disposed on the second semiconductor layer 123. The second electrode 125 can be disposed on the upper surface of the second semiconductor layer 123. In this case, since the second semiconductor layer 123 is disposed on the first semiconductor layer 121, the second electrode 125 disposed on the upper surface of the second semiconductor layer 123 can be located at a higher position than the first electrode 124 disposed on the upper surface of the first semiconductor layer 121. The second electrode 125 can be an electrode for electrically connecting the power line VDD and the second semiconductor layer 123. In this case, the second semiconductor layer 123 can be a semiconductor layer doped with p-type impurities, and the second electrode 125 can be an anode. The second electrode 125 can be formed of a conductive material, for example, a transparent conductive material such as ITO (indium tin oxide) or IZO (indium zinc oxide), or an opaque conductive material such as titanium (Ti), gold (Au), silver (Ag), copper (Cu), or alloys thereof, but embodiments of the present invention are not limited thereto.

[0084] Next, a passivation layer (not shown) can be formed to partially surround the first semiconductor layer 121, the first light-emitting layer 122, the second semiconductor layer 123, the first electrode 124, and the second electrode 125. The passivation layer can be formed of an insulating material and can protect the first semiconductor layer 121, the first light-emitting layer 122, the second semiconductor layer 123, the first electrode 124, and the second electrode 125. Furthermore, contact holes exposing the first electrode 124 and the second electrode 125 can be formed in the passivation layer, allowing the first connection electrode CE1 and the second connection electrode CE2, which will be formed subsequently, to be electrically connected to the first electrode 124 and the second electrode 125 through the contact holes.

[0085] The first planarization layer 117a may be disposed on the adhesive layer 116. The first planarization layer 117a may be disposed around a portion of the side surface of the plurality of first light-emitting elements LEDs, thereby fixing and protecting the plurality of first light-emitting elements LEDs.

[0086] The first planarization layer 117a may be a single layer or multiple layers, and may be formed, for example, by photoresist or acrylic organic materials, but the embodiments of the present invention are not limited thereto.

[0087] Furthermore, the height of the first planarization layer 117a can be lower than the height of the first electrode 124. For example, the thickness of the first planarization layer 117a can be adjusted by performing an ashing process. For example, after applying the material layer of the first planarization layer 117a to cover the first light-emitting element LED, an ashing process can be performed to reduce the overall thickness of the material layer of the first planarization layer 117a, so that the height of the first planarization layer 117a can be formed to be lower than the height of the first electrode 124. Therefore, the first planarization layer 117a can expose the first electrode 124. Therefore, the first connection electrode CE1 disposed on the first planarization layer 117a can be easily connected to the first electrode 124 without the need for a separate contact hole.

[0088] The first connecting electrode CE1 can be disposed on the first planarization layer 117a. The first connecting electrode CE1 can be an electrode disposed in each of the plurality of sub-pixels SP to electrically connect the first light-emitting element LED and the driving transistor DT. The first connecting electrode CE1 can be connected to the first reflective electrode RE1 through contact holes formed in the first planarization layer 117a and the adhesive layer 116. Therefore, the first connecting electrode CE1 can be electrically connected to one of the source electrode SE and drain electrode DE of the driving transistor DT through the first reflective electrode RE1. For example, the first connecting electrode CE1 can connect the first electrode 124 of the first light-emitting element LED to the source electrode SE of the driving transistor DT, but embodiments of the present invention are not limited thereto.

[0089] Alternatively, the first connecting electrode CE1 can be formed by providing a material layer for the first light-emitting element LED, and then removing portions of the material layer of the first connecting electrode CE1 disposed on the upper surface and part of the side surface of the second semiconductor layer 123 and the second electrode 125. For example, after applying photoresist to the first light-emitting element LED, the second electrode 125 can be exposed by removing the photoresist disposed on the upper surface of the second electrode 125 and the upper surface and part of the side surface of the second semiconductor layer 123 through an ashing process. Therefore, only portions of the material layer of the first connecting electrode CE1 disposed on the upper surface of the second electrode 125 and the upper surface and part of the side surface of the second semiconductor layer 123 can be exposed. Furthermore, the first connecting electrode CE1 can be formed by removing the exposed material layer of the first connecting electrode CE1 through an ashing process, but embodiments of the present invention are not limited thereto.

[0090] The second planarization layer 117b can be disposed on the first planarization layer 117a and the plurality of first connecting electrodes CE1. The second planarization layer 117b, together with the first planarization layer 117a, can flatten the upper surface of the substrate 110 on which the first light-emitting element LED is disposed, and together with the adhesive layer 116, can fix the first light-emitting element LED on the substrate 110.

[0091] Furthermore, the second planarization layer 117b can be configured to cover the first connection electrode CE1, thereby separating the first connection electrode CE1 and the second connection electrode CE2 from each other. Therefore, short circuits between the first connection electrode CE1 and the second connection electrode CE2 can be prevented.

[0092] For example, a second planarization layer 117b may be provided only between the first connecting electrode CE1 and the second connecting electrode CE2. The second planarization layer 117b may be a single layer and may be formed, for example, by photoresist or acrylic-based organic materials, but is not limited thereto.

[0093] The second connecting electrode CE2 can be disposed on the second planarization layer 117b. The second connecting electrode CE2 can be an electrode for electrically connecting the first light-emitting element LED and the power line VDD. The second connecting electrode CE2 can be connected to the second reflective electrode RE2 through contact holes formed in the second planarization layer 117b, the first planarization layer 117a, and the adhesive layer 116. Therefore, the second connecting electrode CE2 can be electrically connected to the power line VDD through the second reflective electrode RE2. For example, the second connecting electrode CE2 can connect the second electrode 125 of the first light-emitting element LED to the power line VDD, but embodiments of the present invention are not limited thereto.

[0094] The second connecting electrode CE2 disposed on the second planarization layer 117b can be formed on the first light-emitting element LED and can be arranged to distinguish the light-emitting region EA and the non-light-emitting region NEA. That is, the second connecting electrode CE2 can include a first portion corresponding to the non-light-emitting region NEA and a second portion corresponding to the light-emitting region EA. The first portion can include multiple layers in the non-light-emitting region NEA, and the second portion can be disposed above the first light-emitting element LED and connected to the first light-emitting element LED. The light-emitting region EA can be the area where light emitted from the first light-emitting layer 122 of the first light-emitting element LED is output to the outside of the display device 100, and the non-light-emitting region NEA can be the area where light emitted from the first light-emitting layer 122 of the first light-emitting element LED is blocked by the second connecting electrode CE2 and is not output to the outside.

[0095] The second connecting electrode CE2 may include a transparent electrode TC in the light-emitting region EA. The transparent electrode TC may be formed of a transparent conductive material, or it may be a single layer of a transparent conductive material. Light emitted from the first light-emitting layer 122 of the first light-emitting element LED can be output to the outside of the display device 100 through the transparent electrode TC in the light-emitting region EA. The transparent electrode TC may be formed of a transparent conductive material composed of indium (In) oxide materials such as indium tin oxide (ITO) or indium zinc oxide (IZO), but embodiments of the present invention are not limited thereto.

[0096] The second connecting electrode CE may include a transparent electrode TC and an anti-reflective layer on the transparent electrode TC in the non-light-emitting region NEA.

[0097] The non-emitting region NEA can be a region where light emitted from the first light-emitting layer 122 of the first light-emitting element LED is not emitted to the outside. Typically, a method exists where the emitted light is prevented from being emitted to the outside by using a reflective layer with relatively high reflectivity to reflect the emitted light inwards. When a reflective layer with high reflectivity is applied to the non-emitting region NEA, light emitted from the interior of the display device 100 can be blocked, but at the same time, light from the exterior of the display device 100 can also be reflected, leading to a degraded quality of the display device 100. In this case, the second connection electrode CE2 can be an electrode used to electrically connect the first light-emitting element LED and the power line VDD. Since it is necessary to electrically connect the power line VDD disposed in the non-emitting region NEA and the first light-emitting element LED disposed in the light-emitting region EA, the transparent electrode TC of the second connection electrode CE2 disposed in the light-emitting region EA can extend into the non-emitting region NEA, and the second connection electrode CE2 can further include multiple layers AR1, AR2 on the transparent electrode TC in the non-emitting region NEA.

[0098] In the non-luminescent region NEA, an anti-reflective layer disposed on the transparent electrode TC may comprise multiple layers. The anti-reflective layer may comprise a first anti-reflective layer AR1 and a second anti-reflective layer AR2. As described later, the anti-reflective layer may be black in various ways in the region corresponding to the non-luminescent region NEA, and the region forming such an anti-reflective layer may form an anti-reflective region. The first anti-reflective layer AR1 may be a reflective layer formed of a conductive material with relatively high light reflectivity and high conductivity, and the second anti-reflective layer AR2 may be a translucent film formed of oxides or nitrides. The first anti-reflective layer AR1 may be formed of a metallic material such as copper (Cu), aluminum (Al), silver (Ag), or gold (Au), and the second anti-reflective layer AR2 may be formed of an oxide or nitride of a metallic material such as molybdenum (Mo), titanium (Ti), or chromium (Cr). For example, the transmittance of the second anti-reflective layer AR2 may be higher than that of the first anti-reflective layer AR1 and lower than that of the transparent electrode TC.

[0099] Figure 3A and Figure 3B This is a view showing the case where the external incident light EXL and the internal incident light INL are reflected by the second connection electrode CE2. In this case, the external incident light EXL can be light such as sunlight or fluorescence that is incident on the display device 100 from the outside of the display device 100, and the internal incident light INL can be light emitted from the first light-emitting layer 122 of the first light-emitting element LED.

[0100] exist Figure 3A In the display device 100, the internal incident light INL (i.e., the light emitted from the first light-emitting element LED) can pass through the transparent electrode TC in the light-emitting region EA, allowing the light to be output to the outside of the display device 100. However, in the non-light-emitting region NEA, the internal incident light INL can be reflected back into the display device 100 by the first anti-reflective layer AR1, which is a reflective layer with relatively high light reflectivity. In this case, a partition wall (not shown) and a reflector (not shown) can be provided around the first light-emitting element LED to emit light to the outside of the display device 100, thereby improving the light extraction efficiency of the first light-emitting element LED.

[0101] Externally incident light EXL can travel from the outside to the display device 100 and can be reflected at the second connecting electrode CE2. Because light is reflected at the interface of two objects with different refractive indices, therefore... Figure 3AIn the two layers, some light from the externally incident light EXL can be reflected first at the surface of the second antireflective layer AR2 to generate the first reflected light RL1, and the remaining light from the externally incident light EXL that passes through the second antireflective layer AR2 without being reflected can be totally internally reflected at the interface between the first and second antireflective layers AR1 and AR2 to generate the second reflected light RL2, thus producing two types of reflected light RL1 and RL2. At this time, due to the difference in the optical path, the phases of the first reflected light RL1 and the second reflected light RL2 may be different, and these two reflected light RL1 and RL2 can combine to cause destructive interference. In the case of destructive interference, the amplitude of the reflected light can be reduced compared to the first reflected light RL1 and the second reflected light RL2, thereby reducing the amount of reflected light. In such cases... Figure 3A When the anti-reflective layer is configured as a double layer, the second connecting electrode CE2 can be configured in the non-light-emitting region NEA as a three-layer structure of a translucent film, a reflective film, and a transparent film in the direction from the outside of the display device 100 to the substrate 110, thereby effectively reducing reflected light. In the above configuration, the transparent film below the reflective film can be configured as a transparent electrode TC. This is achieved through... Figure 3A The second connecting electrode CE2 is configured as shown, and the internal incident light INL can be confined to the light-emitting region EA, thereby preventing color mixing between sub-pixels SP of different colors. For the external incident light EXL, the quality of the display device 100 can be improved by reducing the reflected light through the destructive interference of the first reflected light RL1 and the second reflected light RL2.

[0102] This multi-layered reflection can be a phenomenon that typically occurs in two or more layers. Figure 3B The diagram above shows that the second connecting electrode CE2 is a three-layer structure, in which... Figure 3A The reflections described occur in a two-layer configuration. Figure 3BThe following diagram compares the reflections occurring in two-layer and three-layer configurations. For the external incident light EXL, in the case where a third reflection RL3 is generated due to the additional layers in addition to the first reflected light RL1 and the second reflected light RL2, if the phase difference of the reflected light is adjusted, the reflected light can be reduced more significantly than the reduction caused by reflections in two layers due to the destructive interference of multiple reflections. To achieve a high-quality display device 100 for the external incident light EXL, it is advantageous that the reflective layers be configured as a combination of transparent-semi-transparent films or semi-transparent films with different refractive indices at the boundaries, which is more effective than multiple reflective layers. Since the internal incident light INL must be completely reflected at the lowest layer in the layers to achieve total internal reflection, the reflective layer of the second connecting electrode CE2 can include a combination of transparent-semi-transparent films-reflective films or semi-transparent films-transparent films-reflective films. Since the second connecting electrode CE2 is formed as a transparent electrode TC extending from the light-emitting region EA to the non-light-emitting region NEA, the second connecting electrode CE2 can be configured in the non-light-emitting region NEA in the direction from the outside of the display device 100 to the substrate 110 as a four-layer configuration, including either a transparent film-semi-transparent film-reflective film or a semi-transparent film-transparent film-reflective film. In the above configuration, the transparent film below the reflective film can be composed of the transparent electrode TC. In this case, the second anti-reflective layer AR2 can be configured as a multilayer, and can include transparent film-semi-transparent film or semi-transparent film-transparent film with different refractive indices. The second anti-reflective layer AR2 can include, but is not limited to, metallic materials such as molybdenum, titanium, or chromium, and can further include inorganic oxides or nitrides such as silicon oxide or silicon nitride.

[0103] Figure 4 This is a cross-sectional view showing each sub-pixel of the display panel of the display device according to the second embodiment of the present invention, and descriptions of the same parts as in the first embodiment will be omitted.

[0104] The third connecting electrode CE3 can be disposed on the second planarization layer 117b and can electrically connect the first light-emitting element LED and the power line VDD. The third connecting electrode CE3 disposed on the second planarization layer 117b can be formed on the first light-emitting element LED and can be arranged to distinguish the light-emitting region EA and the non-light-emitting region NEA. The third connecting electrode CE can include a transparent electrode TC in the light-emitting region EA, and a first transparent film 118 can be disposed on the transparent electrode TC. The first transparent film 118 can be an inorganic insulating layer formed of a transparent inorganic material. Light emitted from the first light-emitting layer 122 of the first light-emitting element LED can pass through the transparent electrode TC and the first transparent film 118 in the light-emitting region EA and be output to the outside of the display device 100. The first transparent film 118 can be an inorganic insulating layer formed of an inorganic oxide or nitride with inorganic components, such as silicon oxide or silicon nitride, but is not limited thereto.

[0105] To prevent light emitted from the first light-emitting element LED from being emitted to the outside in the non-light-emitting area NEA and to prevent reflection of light from outside the display device 100, the third connecting electrode CE may include a third anti-reflective layer AR3 on the transparent electrode TC in the non-light-emitting area NEA. The third anti-reflective layer AR3 may be formed of a black film and absorbs light emitted from the first light-emitting element LED to prevent light from being emitted to the outside and effectively reduce light reflection from the outside. In the non-light-emitting area NEA, the first transparent film 118 provided in the light-emitting area EA may not be provided on the third anti-reflective layer AR3 of the third connecting electrode CE3.

[0106] The transparent electrode TC and the third antireflective layer AR3 of the third connecting electrode CE3 formed in the non-light-emitting region NEA can include the same composition. Since the transparent electrode TC is arranged to extend from the light-emitting region EA, the transparent electrode TC of the third connecting electrode CE3 in the light-emitting region EA and the third antireflective layer AR3 in the non-light-emitting region NEA can include the same composition. As described below, the third antireflective layer AR3 can be arranged together with the transparent electrode TC, and the composition ratio can be changed through the process to become a black discoloration layer. This change in composition ratio can occur when the transparent electrode TC is reduced during the etching process, such that the transparent electrode TC and the third antireflective layer AR3 can include the same composition but with different composition ratios. In this case, the components whose ratios change in the transparent electrode TC and the third antireflective layer AR3 can be indium and oxygen. That is, the ratio of indium to oxygen in the transparent electrode TC and the third antireflective layer AR3 can be different.

[0107] For example, after forming a transparent electrode TC on the second planarization layer 117b in the light-emitting region EA and the non-light-emitting region NEA, a first transparent film 118 can be formed only in the light-emitting region EA. After forming the first transparent film 118, the transparent electrode TC and the first transparent film 118 can be disposed in the light-emitting region EA, and the transparent electrode TC can be disposed in the non-light-emitting region NEA. Subsequently, when an etching process is performed, the surface portion of the transparent electrode TC exposed in the non-light-emitting region NEA can react with the gas used in the etching process to cause an oxidation or reduction reaction. At this time, the indium component of the transparent electrode TC will precipitate, and the surface portion of the transparent electrode whose composition has changed will become a third anti-reflective layer AR3, which is a black fading layer. In the non-light-emitting region NEA, a portion of the transparent electrode TC can be changed to the third anti-reflective layer AR3, and the third anti-reflective layer AR3 can be formed to contact the unchanged remaining portion of the transparent electrode TC. At this time, the etching process can be a dry etching process, and the gas used in the etching process can include hydrogen. In the etching process using hydrogen plasma, the indium oxide on the surface of the third antireflective layer AR3 can react with hydrogen to induce a reduction reaction, causing the surface portion of the transparent electrode TC to become the black third antireflective layer TC, and the surface roughness of the third antireflective layer AR3 to deteriorate. At this time, since a first transparent film 118 is formed on the transparent electrode TC of the third connecting electrode CE3 in the light-emitting region EA, the transparent electrode TC of the light-emitting region EA can be protected by the first transparent film 118 during the etching process, thereby preventing the etching reaction. In this case, the transparent electrode TC of the light-emitting region EA and the third antireflective layer AR3 of the non-light-emitting region NEA can contain the same composition, but the composition ratio can be different. The different ratios could be the ratio of indium to oxygen. Furthermore, the surface portion of the transparent electrode TC below the first transparent film 118 in the light-emitting region EA can have different surface roughnesses than the third antireflective layer AR3 in the non-light-emitting region NEA. For example, the surface roughness value of the third antireflective layer AR3 in the non-light-emitting region NEA can be greater than the surface roughness value of the surface portion of the transparent electrode TC below the first transparent film 118 in the light-emitting region EA.

[0108] Figure 5 This is a cross-sectional view showing each sub-pixel of the display panel of the display device according to the third embodiment of the present invention, and descriptions of the same parts as in the second embodiment will be omitted.

[0109] exist Figure 4 In the second embodiment, the first transparent film 118 on the transparent electrode TC of the light-emitting region EA can be configured as a planar film. However, in Figure 5In a third embodiment, a second transparent film 119 may be disposed on the transparent electrode TC of the light-emitting region EA, and the second transparent film 119 may be configured in multiple lens shapes. The second transparent film 119 may be an inorganic insulating layer formed of a transparent inorganic material, and light emitted from the first light-emitting layer 122 of the first light-emitting element LED can pass through the transparent electrode TC and the second transparent film 119 in the light-emitting region EA and be output to the outside of the display device 100. The second transparent film 119 may be formed of an inorganic oxide or nitride such as silicon oxide or silicon nitride, but is not limited thereto.

[0110] The surface portion of the second transparent film 119 may have multiple lens shapes disposed on the transparent electrode TC in the light-emitting region EA, such that the light emitted from the first light-emitting layer 122 of the first light-emitting element LED can be configured to be emitted more uniformly with reference to the center of the light-emitting region EA. The second transparent film 119 may be symmetrically disposed with reference to the center of the light-emitting region EA, and the first lens 131 disposed in the center of the light-emitting region EA may have a convex shape and may be used to focus the light emitted from the first light-emitting layer 122 of the first light-emitting element LED toward the center of the light-emitting region EA. The second lens 132 disposed around the first lens 131 may be configured to have a convex shape and may be configured to have a smaller size than the first lens 131. Multiple second lenses 132 may be disposed on the surface portion of the second transparent film 119. The second transparent film 119 may include a first lens 131 with a relatively large lens shape in the center of the light-emitting region EA, and a second lens 132 in the light-emitting region EA surrounding the first lens 131 and having a smaller size than the first lens 131. Therefore, when the first light-emitting layer 122 of the first light-emitting element LED emits light unevenly, or when the first light-emitting element LED is not arranged in the center of the light-emitting area EA and the light emitted from the first light-emitting layer 122 is more abundant at the periphery of the light-emitting area EA than at the center, the first lens 131 and the second lens 132 can be configured to compensate for this and make the light emitted more evenly with reference to the center of the light-emitting area EA.

[0111] exist Figure 2 , Figure 4 and Figure 5 In the first, second, and third embodiments, as examples, the first light-emitting element LED can be a lateral type light-emitting diode, but is not limited thereto; the first light-emitting element LED can also be configured to use a vertical type light-emitting diode. Furthermore, the first light-emitting element LED can be configured to use an organic light-emitting diode.

[0112] Figure 6 This is a cross-sectional view showing each sub-pixel of the display panel of the display device according to the fourth embodiment of the present invention, and will omit the sub-pixels of the display panel. Figure 2 The description of the same parts as the first embodiment.

[0113] exist Figure 2 In the first embodiment, a lateral light-emitting diode can be used as a light-emitting element, but... Figure 6 In the fourth embodiment, a vertical light-emitting diode can be used as a light-emitting element, but is not limited thereto.

[0114] Reference Figure 6 The light-shielding pattern LS, driving transistor DT, buffer layer 111, gate insulating layer 112, first interlayer insulating layer 113, second interlayer insulating layer 114, cladding layer 115, first capacitor electrode CST1, second capacitor electrode CST2, power line VDD, first reflective electrode RE1, and second reflective electrode RE2 can be disposed in each sub-pixel SP on substrate 110, and can be coupled with... Figure 2 Connect in the same way.

[0115] An electrode connection layer 120 can be formed on a plurality of reflective electrodes RE to fix a second light-emitting element LED' disposed on the electrode connection layer 120. The electrode connection layer 120 can be electrically connected to a first reflective electrode RE1 and can be electrically connected to a third electrode 134 of the second light-emitting element LED'. Thus, the electrode connection layer 120 can be disposed in each of a plurality of sub-pixels SP and can electrically connect the second light-emitting element LED' and the driving transistor DT. The electrode connection layer 120 may include a thermosetting adhesive material capable of thermal curing and may also include a metal material such as indium for electrical connection with the first reflective electrode RE1 and the third electrode 134.

[0116] Multiple second light-emitting elements (LEDs) can be respectively disposed on the electrode connection layer 120 in multiple sub-pixels (SPs). The multiple second light-emitting elements (LEDs) are elements that emit light through current, and may include second light-emitting elements (LEDs) emitting red light, green light, blue light, etc., and their combination can achieve light of various colors including white. For example, the multiple second light-emitting elements (LEDs) can be light-emitting diodes (LEDs) or micro LEDs, but embodiments of the present invention are not limited thereto.

[0117] The second light-emitting element LED' may include a third semiconductor layer 131, a second light-emitting layer 132, a fourth semiconductor layer 133, a third electrode 134, a fourth electrode 135, and a passivation layer (not shown). The composition and function of the third semiconductor layer 131, the second light-emitting layer 132, the fourth semiconductor layer 133, the third electrode 134, and the fourth electrode 135 can be respectively related to... Figure 2The first semiconductor layer 121, the first light-emitting layer 122, the second semiconductor layer 123, the first electrode 124, and the second electrode 125 have roughly the same composition and function, so the description of the same parts can be omitted.

[0118] The first planarization layer 117a may be disposed on the cladding layer 115 and the reflective electrode RE. The first planarization layer 117a may be disposed around a portion of the side surface of the plurality of second light-emitting elements LEDs ', thereby fixing and protecting the plurality of second light-emitting elements LEDs '. The upper surface of the first planarization layer 117a may be positioned below the second light-emitting layer 132 and may not surround the second light-emitting layer 132. However, embodiments of the present invention are not limited thereto.

[0119] The second connecting electrode CE2 can be disposed on the first planarization layer 117a. The second connecting electrode CE2 can be an electrode for electrically connecting the second light-emitting element LED' and the power line VDD. The second connecting electrode CE2 can be connected to the second reflective electrode RE2 through a contact hole formed in the first planarization layer 117a. Therefore, the second connecting electrode CE2 can be electrically connected to the power line VDD through the second reflective electrode RE2.

[0120] The second connecting electrode CE2 disposed on the first planarization layer 117a can be formed on the second light-emitting element LED' and can be arranged to distinguish the light-emitting region EA and the non-light-emitting region NEA. That is, the second connecting electrode CE2 can include a first part corresponding to the non-light-emitting region NEA and a second part corresponding to the light-emitting region EA. The first part can include multiple layers in the non-light-emitting region NEA, and the second part can be disposed above the second light-emitting element LED' and connected to the second light-emitting element LED'. The light-emitting region EA can be the area where light emitted from the second light-emitting layer 132 of the second light-emitting element LED' is output to the outside of the display device 100, and the non-light-emitting region NEA can be the area where some light emitted from the second light-emitting layer 132 of the second light-emitting element LED' toward the reflective electrode RE is reflected by the reflective electrode RE and blocked by the second connecting electrode CE2 and is not output to the outside.

[0121] The second connecting electrode CE2 may include a transparent electrode TC in the light-emitting region EA. The transparent electrode TC may include a transparent conductive material. In the non-light-emitting region NEA, the second connecting electrode CE2 may include the transparent electrode TC, and an anti-reflective layer composed of multiple layers may be disposed on the transparent electrode TC. The anti-reflective layer may include a first anti-reflective layer AR1 and a second anti-reflective layer AR2. The first anti-reflective layer AR1 may be a reflective layer formed of a conductive material with relatively high light reflectivity and high conductivity, and the second anti-reflective layer AR2 may be a translucent film formed of oxide or nitride.

[0122] By including a first anti-reflective layer AR1 with relatively high light reflectivity, the anti-reflective layer disposed on the transparent electrode TC in the non-emitting region NEA can prevent some light emitted from the second light-emitting layer 132 of the second light-emitting element LED' toward the reflective electrode RE from being reflected by the reflective electrode RE and then output to the outside in the non-emitting region NEA. By preventing light reflection caused by the reflective electrode RE, the brightness difference according to the viewing angle caused by the positional deviation of the second light-emitting element LED' on the reflective electrode RE can be reduced or improved.

[0123] In the non-light-emitting region NEA, the anti-reflective layer can be configured to be below the top of the second light-emitting element LED' and in contact with it, and configured to surround the side surface of the second light-emitting element LED'. The top of the first planarization layer 117a can be positioned below the second light-emitting layer 132, and the anti-reflective layer can be positioned below the second light-emitting layer 132, that is, the second light-emitting layer 132 can be positioned above the anti-reflective layer. With this arrangement, light from the second light-emitting layer 132 in the opposite direction to the reflective electrode is not restricted. Light from the second light-emitting layer 132 along the direction of the reflective electrode can be reflected by the reflective electrode and emitted into the light-emitting region EA, thereby improving light extraction efficiency, and some light reflected by the reflective electrode toward the non-light-emitting region NEA can be blocked. However, embodiments of the present invention are not limited thereto.

[0124] The anti-reflective layer may include a first anti-reflective layer AR1 and a second anti-reflective layer AR2, and as follows: Figure 3A and Figure 3B The quality of the display device 100 can be improved by utilizing the destructive interference of external light pointing from the outside of the display device to the substrate to reduce reflected light.

[0125] According to an embodiment of the present invention, by configuring a light-emitting element and a second connecting electrode connected to the light-emitting element and distinguishing the light-emitting area from the non-light-emitting area, a low-cost, high-quality display device can be provided.

[0126] The display device according to various embodiments of the present invention can be described as follows.

[0127] A display device according to various embodiments of the present invention includes: a substrate including a display area; a driving element formed on the substrate; a first connecting electrode connected to the driving element; a light-emitting element connected to the first connecting electrode; and a second connecting electrode connected to the light-emitting element and distinguishing between the light-emitting area and the non-light-emitting area. The second connecting electrode may include a black anti-reflective area in the non-light-emitting area, and may include multiple layers in the anti-reflective area.

[0128] In a display device according to various embodiments of the present invention, the second connecting electrode may be formed above the light-emitting element and connected to the light-emitting element.

[0129] In a display device according to various embodiments of the present invention, the second connecting electrode may include a transparent conductive material, and the second connecting electrode may be configured as a single layer of the transparent conductive material in the light-emitting region.

[0130] In a display device according to various embodiments of the present invention, the second connection electrode in the non-light-emitting area may include an anti-reflective layer composed of multiple conductive layers, and the transparent conductive material in the light-emitting area may extend into the non-light-emitting area and be disposed below the anti-reflective layer composed of the multiple layers.

[0131] In the display device according to various embodiments of the present invention, the anti-reflective layer in the non-light-emitting area can minimize the reflection of external light by light cancellation due to the difference in refractive index between the multiple layers.

[0132] In the display device according to various embodiments of the present invention, the anti-reflective layer of the second connecting electrode may include a double layer of semi-transparent film-reflective film or a triple layer of semi-transparent film-transparent film-reflective film in the direction from the outside of the display device toward the substrate.

[0133] In the display device according to various embodiments of the present invention, the translucent film of the antireflective layer of the second connecting electrode may be an oxide of chromium, molybdenum, titanium and aluminum, and the reflective film may include one of copper, aluminum, silver and gold.

[0134] In a display device according to various embodiments of the present invention, the top of the light-emitting element may be positioned above the anti-reflective layer of the second connecting electrode.

[0135] In a display device according to various embodiments of the present invention, a planarization layer may be disposed above the driving element and surrounding the light-emitting element, and the top of the planarization layer may be positioned as a light-emitting layer lower than the light-emitting element.

[0136] In the display device according to various embodiments of the present invention, an inorganic insulating layer may be provided on and in contact with the second connecting electrode in the light-emitting region, while no inorganic insulating layer may be provided on the second connecting electrode in the non-light-emitting region.

[0137] In the display device according to various embodiments of the present invention, the transparent conductive material of the light-emitting region where the inorganic insulating layer is provided and the anti-reflective layer of the non-light-emitting region may have the same composition, but the composition ratio may be different, and the different composition ratio may be the composition ratio of indium and oxygen.

[0138] In the display device according to various embodiments of the present invention, the anti-reflective layer of the second connecting electrode may be black.

[0139] In a display device according to various embodiments of the present invention, the distinction between the light-emitting region and the non-light-emitting region by the second connection electrode can be formed by the following steps: A driving element can be formed on top of a substrate. A first connection electrode can be formed on top of the driving element and connected to the driving element. A light-emitting element can be formed on top of the first connection electrode. A second connection electrode formed of a transparent conductive material containing indium can be deposited on top of the light-emitting element, and an inorganic insulating layer is formed only on the deposited second connection electrode in the light-emitting region. The inorganic insulating layer can be used as a mask to perform an etching process, such as a hydrogen-containing plasma process, on the second connection electrode in the non-light-emitting region, such that a portion of the second connection electrode in the non-light-emitting region can change from transparent to black and become a fading layer.

[0140] In the display device according to various embodiments of the present invention, the upper surface of the inorganic insulating layer on the second connecting electrode of the light-emitting region may have a flat shape or include a lens shape.

[0141] In a display device according to various embodiments of the present invention, when the upper surface of the inorganic insulating layer on the second connecting electrode of the light-emitting region comprises a lens shape, the lens shape may include a first lens and a second lens having a size smaller than the first lens. The first lens may be disposed at the center of the light-emitting region, and the second lens may surround the first lens. The lens shape may be configured to be symmetrical about the center of the light-emitting region.

[0142] According to an embodiment of the present invention, since the light-emitting area and the non-light-emitting area can be distinguished solely by the second connecting electrode on the light-emitting element, a separate film for preventing external light reflection is not required, thus providing a low-cost, high-quality display device with low reflectivity.

[0143] The above description is merely an illustrative illustration of the technical concept of the present invention. Those skilled in the art can make various modifications and variations without departing from the essential characteristics of the invention. Furthermore, the embodiments disclosed in this invention are not intended to limit the technical concept of the invention, but rather to explain it; therefore, the scope of the technical concept of the invention is not limited by these embodiments. The scope of protection of this invention should be interpreted by the following claims, and all technical concepts within their equivalent scope should be interpreted as being included within the scope of the claims of this invention.

Claims

1. A display device, comprising: The substrate includes both light-emitting and non-light-emitting areas; A driving element formed above the substrate; A first connection electrode connected to the driving element; A light-emitting element connected to the first connecting electrode; as well as A second connection electrode is formed above the light-emitting element. The second connecting electrode includes an anti-reflective region corresponding to the non-light-emitting region, and The first part of the second connecting electrode includes multiple layers in the anti-reflection region to distinguish the luminescent region from the non-luminescent region.

2. The display device according to claim 1, wherein the second portion of the second connecting electrode is disposed above the light-emitting element and connected to the light-emitting element.

3. The display device according to claim 1, wherein the second connecting electrode comprises a transparent conductive material.

4. The display device according to claim 3, wherein the second connecting electrode is configured as a single layer of the transparent conductive material in the light-emitting region.

5. The display device according to claim 4, wherein in the second connecting electrode, a portion of the monolayer in the light-emitting region extends into the anti-reflective region, and an anti-reflective layer is disposed on the monolayer in the anti-reflective region.

6. The display device according to claim 5, wherein the anti-reflective layer of the second connecting electrode is black.

7. The display device according to claim 5, wherein the antireflective layer comprises multiple conductive layers.

8. The display device of claim 7, wherein the antireflective layer minimizes the reflection of external light by means of light cancellation due to the difference in refractive index between the multiple layers.

9. The display device according to claim 7, wherein the anti-reflective layer of the second connecting electrode comprises a double layer of semi-transparent film-reflective film, or a triple layer of semi-transparent film-transparent film-reflective film.

10. The display device according to claim 9, wherein the translucent film is an oxide of one of chromium, molybdenum, titanium and aluminum, and the reflective film comprises one of copper, aluminum, silver and gold.

11. The display device according to claim 3, wherein an inorganic insulating layer is provided on and in contact with the second connecting electrode in the light-emitting region, and no inorganic insulating layer is provided on the second connecting electrode in the non-light-emitting region.

12. The display device according to claim 5, wherein the antireflective layer is composed of a fading layer, and The monolayer of the second connecting electrode and the decolorized layer of the second connecting electrode have the same composition, but the composition ratios of the monolayer and the decolorized layer are different from each other.

13. The display device according to claim 12, wherein the different component ratios of the monolayer and the fading layer of the second connecting electrode are indium and oxygen component ratios.

14. The display device according to claim 11, wherein the upper surface of the inorganic insulating layer has a flat shape.

15. The display device according to claim 11, wherein the upper surface of the inorganic insulating layer comprises a lens shape.

16. The display device according to claim 15, wherein the lens shape of the inorganic insulating layer comprises a first lens and a second lens having a size smaller than the first lens. The first lens is disposed in the center of the light-emitting area, and the second lens surrounds the first lens.

17. The display device of claim 16, wherein the lens shape is configured to be symmetrical about the center of the light-emitting region.

18. The display device of claim 5, wherein the antireflective layer is positioned below the top of the light-emitting element and surrounds the light-emitting element.

19. The display device according to claim 5, wherein the light-emitting element comprises a light-emitting layer, and The light-emitting layer is positioned above the anti-reflective layer.

20. The display device according to claim 1, further comprising a planarization layer above the driving element. The light-emitting element includes a light-emitting layer. The planarization layer surrounds the light-emitting element, and The top of the planarization layer is positioned below the light-emitting layer of the light-emitting element.

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