Indium phosphide wafer substrate cleaning control method based on fluid pressure

By monitoring the correlation between fluid impact pressure and lattice strain value in real time, the damage risk area of ​​indium phosphide wafers is identified and a differentiated pressure control benchmark is output, solving the problem of balancing cleaning efficiency and safety in the existing technology and realizing a highly efficient and safe cleaning process.

CN121925053BActive Publication Date: 2026-05-26QINGDAO HUAXIN JINGDIAN TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
QINGDAO HUAXIN JINGDIAN TECH CO LTD
Filing Date
2026-03-25
Publication Date
2026-05-26

AI Technical Summary

Technical Problem

Existing cleaning methods struggle to balance cleaning efficiency and safety for indium phosphide wafers, and are unable to identify high-risk areas, leading to a high risk of irreversible damage.

Method used

By monitoring the correspondence between fluid impact pressure and lattice strain value in real time, lattice response rate data for each region is generated. Combined with benchmark data, damage risk areas are identified, and differentiated critical pressure control benchmarks are output.

Benefits of technology

It enables real-time mechanical state sensing of the surface of indium phosphide wafers, distinguishes between elastic deformation and plastic damage, improves the accuracy and specificity of damage risk identification, and ensures that lattice damage is avoided to the greatest extent during the cleaning process.

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Abstract

This invention discloses a method and system for controlling the cleaning of indium phosphide wafer substrates based on fluid pressure, relating to the field of semiconductor material processing technology. The method includes: acquiring a reference lattice response rate, recovery rate, and distortion reversible range threshold for different crystal orientations; measuring the fluid impact pressure and lattice strain values ​​in each region in real time during the cleaning process to generate a real-time lattice response rate; intermittently reducing the pressure to measure the real-time lattice recovery rate; comparing the real-time rate with the reference rate to generate response deviation and recovery deviation, thereby identifying lattice damage risk areas; comparing the lattice strain values ​​of the risk areas with the threshold after deviation correction, and directly comparing the values ​​of non-risk areas to generate the critical reversible pressure for each region; and outputting a dynamic pressure control reference for different crystal orientations based on the critical pressure of each region. This invention achieves real-time monitoring of the lattice state and identification of damage risks during wafer cleaning, providing a precise reference for differentiated pressure control.
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Citation Information

Patent Citations

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