Integrated power module and automobile control system
By integrating the inverter unit and PTC control unit, optimizing the current path and temperature monitoring, the problems of complex power module packaging structure and parasitic parameter influence are solved, realizing an integrated power module with high power density and safety redundancy.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANGHAI RUJING ELECTRONIC CONTROL TECH CO LTD
- Filing Date
- 2026-02-11
- Publication Date
- 2026-04-28
AI Technical Summary
Existing power modules have complex packaging structures, and parasitic parameters affect the switching process, leading to increased switching losses and electromagnetic interference, as well as insufficient integration and safety redundancy.
The module adopts an integrated design of inverter unit and PTC control unit, optimizes the current path through low-inductance bonding wire and symmetrical parallel DC positive terminal, eliminates Kelvin terminal redundancy, and sets up a thermistor to monitor temperature, so as to realize independent control within the module.
Simplify the packaging structure, reduce the impact of parasitic parameters, improve power density and integration, suppress voltage spikes and oscillations during switching, and enhance system safety redundancy and functional integration.
Smart Images
Figure CN121939831A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of semiconductor power device technology, and in particular to an integrated power module and an automotive control system. Background Technology
[0002] In power module packaging, Kelvin terminals are often used to bring out the source of the MOS chip, providing an independent current path for gate drive and decoupling the drive circuit from the power circuit. However, this also introduces problems such as structural complexity, increased packaging costs, and increased manufacturing difficulty. In addition, current packaging structures generally suffer from excessively long commutation loops between the positive and negative terminals of the bus power supply. The large parasitic inductance introduced by the commutation loop can cause voltage spikes and oscillations during switching, thereby increasing switching losses, electromagnetic interference, and device voltage stress.
[0003] In the process of realizing the multi-functional integration of power modules, the key technical challenges faced by all-in-one integrated power modules are how to simplify the packaging structure, reduce the impact of parasitic parameters on the switching process, coordinate and optimize the spatial layout and electrical performance, and improve the functional integration and system safety redundancy.
[0004] It should be noted that the above description of the technical background is only for the purpose of providing a clear and complete explanation of the technical solutions of the present invention and facilitating understanding by those skilled in the art. It should not be assumed that the above technical solutions are known to those skilled in the art simply because they have been described in the background section of this invention. Summary of the Invention
[0005] In view of the shortcomings of the prior art described above, the purpose of this invention is to provide an integrated power module and automotive control system, which aims to simplify the packaging structure, suppress parasitic parameters during switching, and synergistically improve system integration and safety, thereby effectively solving the problems of complex structure, significant switching interference, insufficient integration and safety redundancy in the prior art.
[0006] To achieve the above and other related objectives, the present invention provides an integrated power module, the integrated power module comprising at least:
[0007] An inverter unit and a PTC control unit are disposed on a substrate inside the encapsulation housing; wherein...
[0008] In the inverter unit, the upper bridge power transistor of each phase is disposed on the first conductive structure of the substrate, and the lower bridge power transistor of each phase is disposed on the corresponding conductive structure of the substrate.
[0009] The first end of each upper-bridge power transistor is electrically connected to the first conductive structure through the bottom electrode and then led out to the DC positive terminal. The control terminal is led out to the corresponding drive terminal through the top electrode. The second end is led out to the corresponding phase power output terminal through the top electrode and electrically connected to the conductive structure where the corresponding lower-bridge power transistor is located through the bonding wire. The first end of each lower-bridge power transistor is electrically connected to the corresponding conductive structure through the bottom electrode. The control terminal is led out to the corresponding drive terminal through the top electrode. The second end is led out to the corresponding DC negative terminal and Kelvin terminal through the top electrode, respectively.
[0010] Optionally, the upper and lower bridge power transistors of each phase in the inverter unit are arranged side by side in the width direction of the package housing.
[0011] Alternatively, the first conductive structure has a first lead and a second lead that are electrically connected to the corresponding DC positive terminal, and the first lead and the second lead are symmetrically arranged on both sides of the region where the power transistor is located in the inverter unit along the length of the package housing.
[0012] Optionally, the PTC control unit includes a first power transistor, a second power transistor, and a third power transistor;
[0013] The first power transistor is disposed on the second conductive structure. The first end is electrically connected to the second conductive structure through the bottom electrode and led out to the corresponding heating resistor pin. The control end is led out to the corresponding control pin through the top electrode. The second end is led out to the corresponding DC output pin through the top electrode.
[0014] The second power transistor is disposed on the third conductive structure. Its first end is electrically connected to the third conductive structure through the bottom electrode and led out to the corresponding heating resistor pin. Its control end is led out to the corresponding control pin through the top electrode. Its second end is led out to the corresponding DC output pin through the top electrode.
[0015] The third power transistor is disposed on the first conductive structure. Its first end is electrically connected to the first conductive structure through the bottom electrode, its control end is led out to the corresponding control pin through the top electrode, and its second end is led out to the common pin of the heating resistor through the top electrode.
[0016] Alternatively, the first power transistor and the second power transistor are arranged side by side in the width direction of the package housing, and the corresponding pins of the first power transistor and the second power transistor are respectively arranged on both sides of the package housing.
[0017] Optionally, a first thermistor and a second thermistor are further disposed on the substrate;
[0018] The first temperature-sensitive resistor is located in the heat-sensitive area of the inverter unit, and its two ends are respectively led out to the corresponding pins;
[0019] The second temperature-sensitive resistor is located in the heat-sensitive area of the PTC control unit, with its two ends led out to the corresponding pins.
[0020] Alternatively, the first and / or the second thermistor may be thermistors with a negative temperature coefficient.
[0021] Optionally, the substrate is a copper-clad ceramic substrate.
[0022] Optionally, the dimensions of the integrated power module meet the following requirements: length ≤ 50.2 mm, width ≤ 37.8 mm, and height ≤ 16 mm.
[0023] To achieve the above and other related objectives, the present invention also provides an automotive control system, which includes at least the aforementioned integrated power module.
[0024] As described above, the integrated power module and automotive control system of the present invention have the following beneficial effects:
[0025] 1. The integrated power module of this invention integrates the inverter unit and the PTC control unit, achieving a single-module package. This effectively improves the power density and integration of the power module, thereby constructing a more compact and higher power density electronic control unit. This module is suitable for scenarios with stringent space and performance requirements, such as thermal management systems for new energy vehicles and integrated electric compressors.
[0026] 2. The integrated power module of the present invention adds a low-inductance bonding line between the source of the upper bridge power transistor and the conductive structure where the bottom electrode of the lower bridge power transistor is located, so as to reduce the influence of package parasitic parameters on the power switching process. Based on this optimized structure, multiple Kelvin terminals (and pins) corresponding to the signal terminals of each phase upper bridge power transistor can be omitted, simplifying the structure, reducing packaging costs and process difficulty, thereby achieving synergistic optimization of the power module in terms of spatial structure and electrical performance.
[0027] 3. The integrated power module of this invention forms a multi-path parallel commutation structure through symmetrically connected parallel DC positive terminals, realizing spatial current shunting. Simultaneously, this layout effectively reduces parasitic inductance in the commutation circuit by shortening the furthest current flow distance, thereby suppressing voltage overshoot and oscillation during the switching process.
[0028] 4. The integrated power module of the present invention achieves independent control of two PTC heating circuits within a single module through optimized layout of the PTC control circuit signal terminals, thereby improving the functional integration and system safety redundancy of the integrated power module.
[0029] 5. The integrated power module of the present invention is also equipped with two thermistors to monitor the operating temperature of the inverter unit and the PTC control unit respectively, thereby further improving safety. Attached Figure Description
[0030] Figure 1 The diagram shown is an electrical structure schematic of the integrated power module of the present invention.
[0031] Figure 2 The diagram shown is a schematic diagram of the circuit principle of the inverter unit and the PTC control unit in the integrated power module of the present invention.
[0032] Figure 3 The diagram shown is a structural schematic of the U-phase bridge arm in the integrated power module of this invention.
[0033] Figure 4 The diagram shows a power circuit diagram of a single DC positive terminal in the integrated power module of the present invention.
[0034] Figure 5 The diagram shows a power circuit with dual DC positive terminals in the integrated power module of this invention.
[0035] Figure 6 The diagram shows a pinout of the integrated power module of this invention.
[0036] Component designation explanation
[0037] 1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30 - Pin number; 50 - Package housing; 51 - Substrate; 52 - Inverter unit; 53 - PTC control unit; 6a - First conductive structure; 6b - Second conductive structure; 6c - Third conductive structure; 6d - Fourth conductive structure; 6e - Fifth conductive structure; 6f - Sixth conductive structure; 61 - First lead; 62 - Second lead; 63 - Third lead. Detailed Implementation
[0038] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.
[0039] Please see Figures 1-6It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.
[0040] like Figure 1 As shown, the present invention provides an integrated power module 1, which includes:
[0041] Encapsulation housing 50 ( Figure 1 (not shown in the image), and a substrate 51, an inverter unit 52, and a PTC control unit 53 disposed within the package housing 50.
[0042] like Figure 1 As shown, the substrate 51 is used to provide mechanical support and circuit connection, and serves as a heat dissipation body. The upper surface (the side where the device is mounted) is provided with multiple electrically isolated conductive structures.
[0043] Specifically, as an example, substrate 51 is implemented using a copper-clad ceramic substrate, which includes a surface conductive copper layer, a ceramic insulating layer, and a bottom metal layer stacked sequentially from top to bottom; wherein the surface conductive copper layer is composed of multiple electrically isolated copper layer units (i.e., conductive structures) arranged sequentially. In practical use, the structure and material of the substrate can be set as needed, and any method that can provide mechanical support and electrical connection for surface devices is applicable to the present invention and is not limited to this embodiment.
[0044] like Figure 1 As shown, the inverter unit 52 and the PTC control unit 53 are mounted on the substrate 51.
[0045] Specifically, in this embodiment, the substrate 51 is divided into a first region and a second region, wherein the first region is used to house the inverter unit 52 and the second region is used to house the PTC control unit 53. In one example, the first region and the second region are arranged along the length of the package housing 50. In actual use, the devices in the inverter unit 52 and the devices in the PTC control unit 53 can also be interleaved, which will not be elaborated here.
[0046] like Figure 1As shown, the upper-bridge power transistors of each phase in the inverter unit 52 are disposed on the first conductive structure of the substrate 51, and the lower-bridge power transistors of each phase are disposed on the corresponding conductive structures of the substrate 51. The first end of each upper-bridge power transistor is electrically connected to the first conductive structure 6a through the bottom electrode and then led out to the DC positive terminal DC+. The control terminal is led out to the corresponding drive terminal through the top electrode, and the second end is led out to the corresponding phase power output terminal through the top electrode and electrically connected to the conductive structure where the corresponding lower-bridge power transistor is located through bonding wires. The first end of each lower-bridge power transistor is electrically connected to the corresponding conductive structure through the bottom electrode, the control terminal is led out to the corresponding drive terminal through the top electrode, and the second end is led out to the corresponding DC negative terminal and Kelvin terminal through the top electrode.
[0047] Specifically, such as Figure 2 As shown, in this embodiment, the inverter unit 52 is a three-phase full-bridge structure. Each phase includes an upper-bridge power transistor (UH, VH, WH) and a lower-bridge power transistor (UL, VL, WL). Each power transistor is implemented using SiC MOS transistors. The first terminal of each power transistor is the drain, the control terminal is the gate, and the second terminal is the source. The drains of each upper-bridge power transistor are connected together as the DC positive terminal DC+, and the sources are connected to the drains of the corresponding lower-bridge power transistors and serve as the output terminals (U, V, W) of the corresponding phase. The sources of each lower-bridge power transistor serve as the corresponding DC negative terminals (UDC-, VDC-, WDC-). Figure 1 As shown, in this example, the upper surface of the substrate 51 includes a first conductive structure 6a, a fourth conductive structure 6d, a fifth conductive structure 6e, and a sixth conductive structure 6f. The first conductive structure 6a is disposed on a first side of the upper surface of the substrate 51, and the fourth conductive structures 6d, 6e, and 6f are disposed on a second side of the upper surface of the substrate 51. The first and second sides are arranged relative to the width direction of the packaging housing 50. Figure 1 In the middle, the width direction is the vertical direction, the first side is the top side, and the second side is the bottom side); the fourth conductive structure 6d, the fifth conductive structure 6e, and the sixth conductive structure 6f are arranged sequentially along the length direction of the packaging shell 50 (in Figure 1In the case of the inverter unit 52, the upper bridge power transistors UH, VH, and WH of the U-phase, V-phase, and W-phase are arranged sequentially on the first conductive structure 6a along the length of the package housing 50. The lower bridge power transistors UL, VL, and WL of the U-phase, V-phase, and W-phase are respectively arranged on the fourth conductive structure 6d, the fifth conductive structure 6e, and the sixth conductive structure 6f, and their arrangement order corresponds to the corresponding upper bridge power transistors (i.e., the upper and lower bridge power transistors of each phase in the inverter unit 52 are arranged side by side in the width direction of the package housing 50; in this example, the upper bridge power transistors UH, VH, and WH of the U-phase, V-phase, and W-phase are arranged sequentially from left to right, and correspondingly, the lower bridge power transistors UL, VL, and WL of the U-phase, V-phase, and W-phase are also arranged sequentially from left to right). The drain of each power transistor is led out through the bottom electrode and electrically connected to the conductive structure thereon (e.g., by conductive glue or soldering); the source and gate are led out through the corresponding top electrode and bonding wire, respectively.
[0048] More specifically, such as Figure 1 As shown, in this example, the gates of each upper-bridge power transistor are led out one-to-one to the corresponding auxiliary conductive structures (etched from the conductive material on the upper surface of substrate 51) via bonding wires, and then led out one-to-one to the corresponding driving pins (UGH, VGH, WGH) via bonding wires. The sources of each upper-bridge power transistor are led out one-to-one to the corresponding auxiliary conductive structures via bonding wires, and then electrically connected to the corresponding phase power output pins (U, V, W) via electrical lead-out structures; the sources of each upper-bridge power transistor are also connected to the conductive structures at the bottom of the corresponding lower-bridge power transistors (6d, 6e, 6f) via bonding wires. The drains of each upper-bridge power transistor are led out through the first conductive structure 6a, which is connected to the DC positive pin DC+ via electrical lead-out structures. The gates of each lower-bridge power transistor are led out one-to-one to the corresponding auxiliary conductive structures via bonding wires, and then led out one-to-one to the corresponding driving pins (UGL, VGL, WGL) via bonding wires. The source of each lower-bridge power transistor is led out to the corresponding auxiliary conductive structure through bonding wires, and then electrically connected to the corresponding DC negative terminal pin (UDC-, VDC-, WDC-) through electrical lead-out structures; the source of each lower-bridge power transistor is also led out to the corresponding auxiliary conductive structure through bonding wires, and then led out to the corresponding Kelvin pin (UKL, VKL, WKL) through bonding wires.
[0049] It should be noted that this embodiment provides a compact and efficient three-phase six-bridge-arm inverter circuit structure. In actual use, the number of phases, power transistor type (including but not limited to IGBTs and any other device that can be used as a power switch transistor) and circuit structure of the inverter unit 52 can be set as needed to achieve the inverter function based on the power transistors of the upper and lower bridges. In addition, the lead-out method (including but not limited to bonding wires, auxiliary conductive structures, and electrical lead-out structures) can also be set as needed to lead out the external ports of the power transistors, which will not be elaborated here.
[0050] like Figure 3 As shown, taking the U-phase bridge arm as an example, in this invention, the source of the U-phase upper bridge power transistor UH is not only led out to the U-phase power output pin U, but also connected to the fourth conductive structure 6d where the U-phase lower bridge power transistor UL is located via a low-inductance bonding wire BW (that is, the drain of the U-phase lower bridge power transistor UL is led out to the U-phase power output pin U sequentially via the fourth conductive structure 6d, the low-inductance bonding wire BW, and the source of the U-phase upper bridge power transistor UH). At this time, the parasitic inductance L between the first conductive structure 6a and the fourth conductive structure 6d is connected in parallel with the low-inductance bonding wire BW. This parallel path can suppress the adverse effects of the parasitic inductance of the MOS source package on the switching process in terms of electrical structure. Each lower bridge power transistor uses Kelvin terminals to decouple the drive circuit from the power circuit. The connection methods for other phases are the same and will not be described in detail here. Based on the optimized design of the low-inductance bonding wire (BW), during the switching process of the upper-bridge power transistor, the rate of change of its loop current is dominated by the external motor phase inductance, which is much larger than the parasitic inductance inside the power module, thus constraining the rate of change of current and optimizing the switching process. Simultaneously, during the turn-off process of the upper-bridge power transistor, the parallel loop formed by the low-inductance bonding wire and the parasitic inductance effectively avoids the influence of parasitic inductance in the traditional path, reducing turn-off voltage stress and oscillation risk. This invention optimizes the bonding wire electrical circuit structure by setting the low-inductance bonding wire (BW), eliminating the Kelvin terminals of each upper-bridge power transistor in the inverter unit 52 (reducing wiring, packaging complexity, and module space size) while maintaining gate drive stability (decoupling of the drive circuit and power circuit) and switching efficiency, thereby improving the power density of the inverter unit 52.
[0051] like Figure 4As shown, in one implementation of the present invention, a power supply circuit is constructed using a single DC positive terminal. The first conductive structure 6a is L-shaped (extending in both the length and width directions of the package housing 50), and the lead closest to the pin (denoted as the third lead 63) is electrically connected to the DC positive pin DC+. In the single DC positive power supply circuit, the commutation circuit path lengths of phases U, V, and W exhibit an asymmetrical distribution. In this example, the U-phase commutation circuit path is the shortest, followed by the V-phase path, and the W-phase path is the longest. The length of each phase circuit shifts with its physical distance from the DC positive lead (third lead 63), resulting in a significant mismatch in the parasitic inductance of the commutation circuit. The difference in parasitic inductance values between phases in this structure can reach approximately three times, causing current dynamic characteristic imbalance during the commutation process and negatively impacting the device's commutation performance.
[0052] To reduce the adverse effects of parasitic inductance introduced by the long commutation loop between the positive and negative power supplies of each phase bridge arm on the commutation process, such as... Figure 1 and Figure 5 As shown, this invention proposes another implementation method, employing a dual DC positive terminal configuration to form the power supply circuit. Through a parallel symmetrical DC positive terminal design, a parallel dual-circuit structure is formed in the power supply circuit of the inverter unit, reducing parasitic inductance and further suppressing the influence of package parasitic parameters on the power switching process. Specifically, the first conductive structure 6a has a first lead 61 and a second lead 62 electrically connected to the corresponding DC positive pin DC+ (two DC+ pins). The first lead 61 and the second lead 62 are respectively located on both sides of the region where the power transistor is located in the inverter unit 52 along the length of the package housing 50 (i.e., on the left and right sides of the region where the power transistor is located in the inverter unit 52). Figure 1 and Figure 5 As shown, in this example, the first conductive structure 6a includes a first part, a second part, and a third part connected in sequence. The first and third parts are arranged along the width direction of the package housing 50, and the second part is arranged along the length direction of the package housing 50, forming a concave structure that surrounds each lower bridge power transistor on three sides and has its opening facing the second side. The first lead-out terminal 61 is located at the end of the first part away from the second part, and the second lead-out terminal 62 is located at the end of the third part away from the second part. Preferably, each phase bridge arm is evenly distributed along the length direction of the package housing 50; as shown... Figure 5As shown, the physical distances of phases U and W to the nearest DC positive terminal are equal, thus ensuring the consistency of the parasitic inductance parameters of the two phases (U and W). The V-phase commutation circuit is structured in parallel with the two DC positive terminal circuits. This parallel electrical characteristic makes the equivalent commutation length of phase V nearly identical to that of phases U and W, and its parasitic inductance parameters are thus matched, ultimately achieving balanced optimization of the electrical performance of the three-phase commutation circuit. This example achieves symmetrical matching of the commutation path lengths and corresponding parasitic inductance parameters of each phase from an electrical structural perspective through the symmetrical arrangement of the two DC positive terminals. It should be noted that in actual use, the phase arms may be unevenly distributed along the length of the package housing 50. In this case, the electrical performance balance of each phase commutation circuit may not be optimal, but it still has a certain optimization effect, which will not be elaborated here.
[0053] like Figure 1 As shown, the PTC control unit 53 is used to control heating devices with a positive temperature coefficient (e.g., PTC resistors) to achieve thermal management.
[0054] Specifically, such as Figure 2 As shown, in this embodiment, the PTC control unit 53 includes a first power transistor Q1, a second power transistor Q2, and a third power transistor Q3. Each power transistor is implemented using a SiC MOS transistor, with its first terminal being the drain, its control terminal being the gate, and its second terminal being the source. The sources of the first power transistor Q1 and the second power transistor Q2 serve as DC output terminals (S1, S2), and their drains serve as heating resistor connection terminals (D1, D2), respectively. The gate-based control signal controls one PTC heating loop. The source of the third power transistor Q3 is connected to the common terminal S3 of the heating resistor, and its drain is connected to the DC positive terminal DC+. The gate-based selection signal selects the PTC control function. The external heating resistors PTC R1 and PTC R2 are external devices. Figure 1 As shown, the upper surface of the substrate 51 includes a second conductive structure 6b and a third conductive structure 6c. As an example, the second conductive structure 6b is disposed on the first side of the upper surface of the substrate 51, and the third conductive structure 6c is disposed on the second side of the upper surface of the substrate 51. A first power transistor Q1 is disposed on the second conductive structure 6b, and a second power transistor Q2 is disposed on the third conductive structure 6c. In this example, the first power transistor Q1 and the second power transistor Q2 are arranged side by side in the width direction of the package housing 50 (side by side is relative, not absolutely aligned), and the corresponding pins of the first power transistor Q1 and the second power transistor Q2 are respectively disposed on both sides of the package housing 50; the drain of each power transistor is led out through the bottom electrode and electrically connected to the conductive structure (e.g., by conductive glue or soldering); the source and gate are led out through the corresponding top electrode and bonding wire, respectively.
[0055] More specifically, such as Figure 1As shown, in this example, the drain of the first power transistor Q1 is electrically connected to the second conductive structure 6b via its bottom electrode, and then connected to the heating resistor pin D1 via an electrical lead-out structure; the gate is led out to the corresponding auxiliary conductive structure via a bonding wire, and then electrically connected to the corresponding control pin G1 via a bonding wire; the source is led out to the corresponding auxiliary conductive structure via a bonding wire, and then electrically connected to the corresponding DC output pin S1 via an electrical lead-out structure. The drain of the second power transistor Q2 is electrically connected to the third conductive structure 6c via its bottom electrode, and then connected to the heating resistor pin D2 via an electrical lead-out structure; the gate is led out to the corresponding auxiliary conductive structure via a bonding wire, and then electrically connected to the corresponding control pin G2 via a bonding wire; the source is led out to the corresponding auxiliary conductive structure via a bonding wire, and then electrically connected to the corresponding DC output pin S2 via an electrical lead-out structure. The third power transistor Q3 is disposed on the first conductive structure 6a. The drain is electrically connected to the first conductive structure 6a through the bottom electrode. The gate is led out to the corresponding auxiliary conductive structure through the bonding wire, and then led out to the corresponding control pin G3 through the bonding wire. The source is led out to the corresponding auxiliary conductive structure through the bonding wire, and then led out to the common pin S3 of the heating resistor through the electrical lead-out structure.
[0056] It should be noted that any circuit structure capable of PTC control is applicable to this invention. In practical applications, the first power transistor S1, the second power transistor S2, and the third power transistor S3 can be of any power transistor type, including but not limited to power switching devices such as IGBTs, and are not limited to this embodiment. Furthermore, lead-out methods (including but not limited to bonding wires, auxiliary conductive structures, and electrical lead-out structures) can be configured as needed to bring out the external ports of the power transistors; these will not be elaborated upon here.
[0057] like Figure 1 , Figure 2 As shown, in this invention, the DC output terminals (S1, S2) of the power transistors (Q1, Q2) in each heating circuit are led out to two pins respectively. The two heating circuits can be controlled independently. If one circuit has a problem, it will not affect the use of the other circuit, thereby improving the functional integration and system redundancy of the integrated power module of this invention.
[0058] like Figure 1As shown, in another implementation of the present invention, a first thermistor T1 and a second thermistor T2 are also provided on the substrate 51. The first thermistor T1 is disposed in the heat-sensitive area of the inverter unit 52 and is used to monitor the operating temperature of the inverter unit 52. As an example, the first thermistor T1 is disposed between the fifth conductive structure 6e and the sixth conductive structure 6f, and its position can be set as needed in actual use. The two ends of the first thermistor T1 are respectively led out to the corresponding pins T1_1 and T1_2. The second thermistor T2 is disposed in the heat-sensitive area of the PTC control unit 53 and is used to monitor the operating temperature of the PTC control unit 53. As an example, the second thermistor T2 is disposed between the first conductive structure 6a and the third conductive structure 6c, and its position can be set as needed in actual use. The two ends of the second thermistor T2 are respectively led out to the corresponding pins T2_1 and T2_2. In this example, the first thermistor T1 and the second thermistor T2 are thermistors with negative temperature coefficients. In actual use, any device that can monitor temperature is applicable, and will not be described in detail here.
[0059] like Figure 6 As shown, this invention integrates inverter, PTC control, and temperature monitoring functions into a single power module, offering advantages such as low influence from packaging parasitic parameters, high power density, and high integration level. In this embodiment, the integrated power module's dimensions meet the following requirements: length ≤ 50.2 mm, width ≤ 37.8 mm, and height ≤ 16 mm. The pin definitions of the integrated power module of this invention are shown in the table below:
[0060] Pin number name Pin number name 1 D2 16 S1 2 S2 17 G1 3 G2 18 DC+ 4 T2_1 19 UDC- 5 T2_2 20 UKL 6 G3 21 UGL 7 S3 22 VDC- 8 UGH 23 VKL 9 U 24 VGL 10 VGH 25 T1_1 11 V 26 T1_2 12 WGH 27 WGL 13 W 28 WKL 14 DNP 29 WDC- 15 D1 30 DC+
[0061] This invention also provides an automotive control system, which includes the integrated power module of this invention; the integrated power module is used to implement functions including but not limited to thermal management and motor drive. Other modules in the automotive control system are configured as needed, and will not be described in detail here.
[0062] In summary, this invention provides an all-in-one integrated power module and an automotive control system with low package parasitic parameter influence. The integrated power module includes: a package housing, an inverter unit and a PTC control unit disposed on a substrate within the package housing; wherein, the upper-bridge power transistors of each phase in the inverter unit are disposed on a first conductive structure of the substrate, and the lower-bridge power transistors of each phase are respectively disposed on corresponding conductive structures of the substrate; the first end of each upper-bridge power transistor is electrically connected to the first conductive structure through a bottom electrode and led out to a DC positive terminal pin, the control end is led out to a corresponding drive pin through a top electrode, and the second end is led out to the corresponding phase power output pin through a top electrode and electrically connected to the conductive structure where the corresponding lower-bridge power transistor is located through a bonding wire; the first end of each lower-bridge power transistor is electrically connected to the corresponding conductive structure through a bottom electrode, the control end is led out to the corresponding drive pin through a top electrode, and the second end is led out to the corresponding DC negative terminal pin and Kelvin pin through a top electrode, respectively. This invention omits Kelvin terminal redundancy while maintaining gate drive stability, simplifying module structure, reducing manufacturing costs, and driving power modules towards higher integration. By optimizing the power circuit layout with a dual DC positive scheme, it achieves low-inductance integration of power commutation, suppressing voltage spikes and oscillations during switching, reducing parasitic inductance in the commutation circuit, significantly suppressing voltage overshoot, and improving system efficiency and reliability. Through optimized arrangement of PTC control circuit signal terminals, independent control of two PTC heating circuits is achieved within a single module, enhancing system functional integration and operational safety redundancy. Ultimately, it achieves synergistic optimization of the module's structure, electrical system, and thermal management, as well as a comprehensive design goal of high power density, high reliability, and low-cost manufacturing. Therefore, this invention effectively overcomes the various shortcomings of existing technologies and has high industrial applicability.
[0063] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.
Claims
1. An integrated power module, characterized in that, The integrated power module includes at least: An inverter unit and a PTC control unit are disposed on a substrate inside the encapsulation housing; wherein... In the inverter unit, the upper bridge power transistor of each phase is disposed on the first conductive structure of the substrate, and the lower bridge power transistor of each phase is disposed on the corresponding conductive structure of the substrate. The first end of each upper-bridge power transistor is electrically connected to the first conductive structure through the bottom electrode and then led out to the DC positive terminal. The control terminal is led out to the corresponding drive terminal through the top electrode. The second end is led out to the corresponding phase power output terminal through the top electrode and electrically connected to the conductive structure where the corresponding lower-bridge power transistor is located through the bonding wire. The first end of each lower-bridge power transistor is electrically connected to the corresponding conductive structure through the bottom electrode. The control terminal is led out to the corresponding drive terminal through the top electrode. The second end is led out to the corresponding DC negative terminal and Kelvin terminal through the top electrode, respectively.
2. The integrated power module according to claim 1, characterized in that: The upper and lower bridge power transistors of each phase in the inverter unit are arranged side by side in the width direction of the package housing.
3. The integrated power module according to claim 1 or 2, characterized in that: The first conductive structure has a first lead and a second lead that are electrically connected to the corresponding DC positive terminal. The first lead and the second lead are symmetrically arranged on both sides of the region where the power transistor is located in the inverter unit along the length of the package housing.
4. The integrated power module according to claim 1, characterized in that: The PTC control unit includes a first power transistor, a second power transistor, and a third power transistor; The first power transistor is disposed on the second conductive structure. The first end is electrically connected to the second conductive structure through the bottom electrode and led out to the corresponding heating resistor pin. The control end is led out to the corresponding control pin through the top electrode. The second end is led out to the corresponding DC output pin through the top electrode. The second power transistor is disposed on the third conductive structure. Its first end is electrically connected to the third conductive structure through the bottom electrode and led out to the corresponding heating resistor pin. Its control end is led out to the corresponding control pin through the top electrode. Its second end is led out to the corresponding DC output pin through the top electrode. The third power transistor is disposed on the first conductive structure. Its first end is electrically connected to the first conductive structure through the bottom electrode, its control end is led out to the corresponding control pin through the top electrode, and its second end is led out to the common pin of the heating resistor through the top electrode.
5. The integrated power module according to claim 4, characterized in that: The first power transistor and the second power transistor are arranged side by side in the width direction of the package housing, and the corresponding pins of the first power transistor and the second power transistor are respectively arranged on both sides of the package housing.
6. The integrated power module according to claim 1, characterized in that: The substrate is also provided with a first temperature-sensitive resistor and a second temperature-sensitive resistor; The first temperature-sensitive resistor is located in the heat-sensitive area of the inverter unit, and its two ends are respectively led out to the corresponding pins; The second temperature-sensitive resistor is located in the heat-sensitive area of the PTC control unit, with its two ends led out to the corresponding pins.
7. The integrated power module according to claim 6, characterized in that: The first and / or the second thermistor are thermistors with a negative temperature coefficient.
8. The integrated power module according to claim 1, characterized in that: The substrate is a copper-clad ceramic substrate.
9. The integrated power module according to claim 1, characterized in that: The dimensions of the integrated power module meet the following requirements: length ≤ 50.2 mm, width ≤ 37.8 mm, and height ≤ 16 mm.
10. A vehicle control system, characterized in that, The vehicle control system includes at least the integrated power module as described in any one of claims 1-9.