A samarium-doped halide scintillation thin film for X-ray-near-infrared co-imaging and its preparation process

Abstract

This application relates to the field of X-ray detector scintillator materials technology, and particularly to a samarium-doped halide scintillator thin film for X-ray-near-infrared co-imaging and its preparation process. The preparation process includes the following steps: S1, applying CsEu... 1‑x Sm x I3 (0 < x ≤ 0.1) crystal powder is added to PMMA, and after adding an interface modifier, the mixture is stirred thoroughly to obtain mixture A; S2, acetone is added to mixture A, magnetically stirred, and then tannic acid and auxiliary modifier are added. The mixture is then ultrasonically treated to obtain solution B; S3, solution B is drop-coated onto a pretreated substrate and dried at 25-30°C. After the solution evaporates, a samarium-doped halide scintillation film for X-ray-near-infrared synergistic imaging is obtained. The halide scintillation film preparation process provided in this application uses PMMA as the core film-forming carrier resin, combined with the efficient dissolution and dispersion effect of acetone solvent, and employs a simple and controllable drop-coating film-forming process. No high-temperature reaction is required, and the preparation method is simple, green, low in toxicity, and low in cost.

Description

Technical Field

[0001] This application relates to the field of X-ray excitation scintillator materials technology, and in particular to a samarium-doped halide scintillator thin film for X-ray-near-infrared co-imaging and its preparation process. Background Technology

[0002] X-ray and near-infrared (NIR) imaging are two recognized non-invasive imaging techniques. Traditional X-ray imaging directly detects X-rays after they have penetrated the object, but its spatial resolution is limited and its contrast for soft tissues such as biological tissues is low. Near-infrared light (especially NIR-I: 750-900 nm, NIR-II: 1000-1700 nm) has advantages such as weak scattering, deep penetration, and low autofluorescence in biological tissues, making it very suitable for optical imaging. Traditional methods require two separate devices for X-ray imaging and near-infrared imaging. This is not only expensive and complex, but also results in information loss due to the inability to perform real-time in-situ imaging, leading to reduced imaging quality and accuracy. With the advancement of imaging technology, the requirements for the sensitivity and resolution of imaging detectors are increasing, as are the performance requirements for scintillators, and the ability to image different tissues simultaneously in a single detection is also required. Therefore, X-ray and near-infrared co-imaging has gradually attracted widespread attention. In the co-imaging process, X-rays are responsible for creating contrast for dense tissues such as bone. Near-infrared photons penetrate the skin and utilize the optical absorption properties of hemoglobin to provide imaging contrast for blood vessels. The different excitation mechanisms of X-rays and near-infrared photons make them complementary in the field of non-invasive imaging, providing more comprehensive diagnostic and examination insights.

[0003] Meanwhile, optoelectronic devices are composed of scintillators and photodetectors. In recent years, silicon photodetector technology, represented by avalanche photodiodes (APDs) and silicon photomultiplier tubes (Si-PMs), has developed rapidly, extending the photosensitive region to the red-near-infrared range (600-1100 nm) and significantly improving the detection quantum efficiency (QE). Taking APDs as an example, the QE can reach 80-90% in the red-near-infrared spectral range, and can reach 98% after optimization, far exceeding that of traditional photodetectors (approximately 35%). Developing novel imaging devices based on near-infrared scintillating crystals and silicon-based photodetectors has become a hot topic in X-ray-near-infrared synergistic imaging technology. This not only integrates the two technologies but also reduces the size of the imaging device, lowers costs, and simultaneously improves detection efficiency and imaging effects.

[0004] In recent years, europium-based rare-earth halide crystals have become highly sought-after radiation detection materials due to their high atomic numbers and high-mass elements, such as Br and I atoms, exhibiting strong X-ray absorption and gamma detection capabilities. Samarium doping, on the other hand, can achieve efficient near-infrared luminescence through Eu-Sm energy transfer. However, the fabrication of large-size samarium-doped europium-based halide materials is difficult, expensive, and prone to deliquescence, hindering their practical application in imaging technology. Therefore, developing a simple, controllable, reproducible, and low-cost process for fabricating samarium-doped halide scintillation films for X-ray near-infrared co-imaging is of great significance. Summary of the Invention

[0005] This application provides a samarium-doped halide scintillation thin film for X-ray-near-infrared co-imaging and its preparation process, in order to solve the problems mentioned in the background art.

[0006] In a first aspect, a process for preparing samarium-doped halide scintillation films for X-ray-near-infrared co-imaging is provided, comprising the following steps:

[0007] S1, CsEu 1-x Sm x I3 (0 < x ≤ 0.1) crystal powder was added to PMMA, and after adding an interface modifier, the mixture was stirred thoroughly to obtain mixture A;

[0008] S2. Add acetone to mixture A, stir magnetically, then add tannic acid and auxiliary modifier, and sonicate to obtain solution B. The mass of the tannic acid is 2-5% of the mass of PMMA.

[0009] S3. Solution B is dropped onto the pretreated substrate and dried at 25~30℃. After the solution evaporates, the film is peeled off to obtain a samarium-doped halide scintillation film for X-ray-near-infrared co-imaging.

[0010] Preferably, in S1, CsEu 1-x Sm x I3 crystals were prepared using the crucible lowering method and passed through a 300-mesh sieve to obtain CsEu. 1- x Sm x I3 crystal powder.

[0011] Preferably, in S1, CsEu 1-x Sm x The mass ratio of I3 crystal powder to PMMA is 1:1 to 1:5.

[0012] Preferably, in S1, the interface modifier comprises polyethyleneimine and triethylenetetramine in a mass ratio of 3:1~2;

[0013] The amount of the interface modifier added is CsEu1-x Sm x I3 mass is 2-8%.

[0014] Preferably, in S2, CsEu 1-x Sm x The mass-to-volume ratio of I3 crystal powder to acetone is (0.6~1) g: 10 mL.

[0015] Preferably, in step S2, the conditions for magnetic stirring are: the diameter of the magnetic rotor is 0.8~1cm, the stirring speed of the magnetic rotor is 550~700rpm, and the time is 8~10h.

[0016] Preferably, in step S2, the amount of auxiliary modifier added is 1-2% of the mass of PMMA, and the method for preparing the auxiliary modifier includes:

[0017] At 60~65℃, sodium gellan gum was dissolved in deionized water, sodium tridecyl sulfosuccinate was added, and the mixture was stirred until completely dissolved to obtain the auxiliary modifier.

[0018] The mass ratio of sodium gellan gum to sodium didecyl sulfosuccinate is 4:2~3.

[0019] Preferably, in step S3, the substrate is selected from a glass plate;

[0020] The pretreatment includes the following steps: washing the glass plate sequentially with water and anhydrous ethanol, and then drying it to complete the pretreatment.

[0021] Preferably, both steps S1 and S2 are performed in a protective atmosphere.

[0022] Secondly, a samarium-doped halide scintillation film for X-ray-near-infrared co-imaging is provided, wherein the halide scintillation film is prepared using any of the above-described samarium-doped halide scintillation film preparation processes for X-ray-near-infrared co-imaging.

[0023] The beneficial effects of the technical solution provided in this application include:

[0024] This application provides a samarium-doped halide scintillation thin film for X-ray-near-infrared co-imaging and its preparation process, CsEu 1-x Sm x The Sm doping in I3 is 0~10%, and Sm is present. 2+ When doped, Eu 2+ As an intermediate in energy absorption and transfer, Sm 2+ As near-infrared emission centers, the energy transfer efficiency of both directly determines the synergistic imaging effect. Tannic acid in the auxiliary modifier can react with Eu... 2+ Formation of stable complexes, specifically inhibiting Eu2+ Nonradiative transitions reduce energy loss, enabling Eu to... 2+ The absorbed X-ray energy is transferred to Sm more efficiently. 2+ Interface modifiers reduce CsEu by forming stable coordination bonds between amino groups and hydroxyl groups on the surface of halides. 1-x Sm x The surface energy of I3, combined with the surface activity of sodium ditridecyl sulfosuccinate in the auxiliary modifier, improves the problem of easy agglomeration of samarium-doped halide powder and makes the powder uniformly distributed;

[0025] On the other hand, addressing the weakness of halide materials being prone to hydrolysis and failure due to their susceptibility to moisture, the coordination bonds formed by the interface modifier PEI and TETA can seal the active sites on the halide surface. The three-dimensional network structure formed by the auxiliary modifier sodium gellanquin can physically block moisture penetration. Combined with the dense encapsulation of PMMA, this extends the service life of the halide scintillation film in humid environments. The halide scintillation film preparation process provided in this application uses PMMA as the core film-forming carrier resin, combined with the efficient dissolution and dispersion effect of acetone solvent, employing a simple and controllable drop-coating film-forming process. This eliminates the need for high-temperature reactions, making the preparation method simple, green, low-toxicity, and low-cost. Attached Figure Description

[0026] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0027] Figure 1 A process flow diagram for the fabrication of samarium-doped halide scintillation films for X-ray-near-infrared co-imaging provided in this application;

[0028] Figure 2 This is a photograph of the samarium-doped halide scintillation thin film for X-ray-near-infrared synergistic imaging prepared in Example 2 of this application.

[0029] Figure 3 The curves showing the comparison of the deliquescence resistance of the samarium-doped halide scintillation film for X-ray-near-infrared synergistic imaging prepared in Example 2 of this application with that of CsEuI3 powder are shown.

[0030] Figure 4 This is an image of the samarium-doped halide scintillation film for X-ray-near-infrared synergistic imaging prepared in Example 2 of this application under X-ray irradiation.

[0031] Figure 5X-ray imaging images of biological tissue samples obtained by samarium-doped halide scintillation films for X-ray-near-infrared synergistic imaging prepared in Example 2 of this application;

[0032] Figure 6 This is a near-infrared luminescence imaging image of a biological tissue sample obtained by a samarium-doped halide scintillation film for X-ray-near-infrared synergistic imaging prepared in Example 2 of this application.

[0033] Figure 7 This image shows the spatial resolution imaging results of the samarium-doped halide scintillation film for X-ray-near-infrared co-imaging prepared in Example 2 of this application during line card (resolution board) testing.

[0034] Figure 8 The samarium-doped halide scintillation film for X-ray-near-infrared co-imaging prepared in Example 2 of this application was tested at 3755.1 nGy s. -1 up to 4929.2 nGy s -1 The intensity of radiation emission at X-ray dose rates within the specified range. Detailed Implementation

[0035] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0036] See Figures 1-8 As shown, this application provides a samarium-doped halide scintillation film for X-ray-near-infrared co-imaging and its preparation process.

[0037] The acetone used in the examples and comparative examples had a purity of 99.9%; PMMA had a molecular weight of 120,000 Da, a purity of ≥99%, and a mesh size of 300 mesh; polyethyleneimine (PEI) had a molecular weight of 10,000 Da and a purity of ≥98%; triethylenetetramine (TETA) had a purity of ≥99%; tannic acid had a purity of ≥98%; sodium gellan gum was low-acyl sodium gellan gum, food grade, with a purity of ≥95% and a particle size of 100 mesh; and sodium ditridecyl sulfosuccinate had a purity of ≥95%.

[0038] And, CsEu 1-x Sm x I3 crystals were prepared using the crucible lowering method and passed through a 300-mesh sieve to obtain CsEu. 1-x Sm x I3 crystal powder, with Sm doping concentration ranging from 0 to 10%.

[0039] Example 1

[0040] The fabrication process of the samarium-doped halide scintillation thin film for X-ray-near-infrared co-imaging provided in this embodiment is as follows:

[0041] S101, add 0.2g CsEu 0.99 Sm 0.01 I3 crystal powder was added to 0.5g of polymethyl methacrylate (PMMA), and 0.01g of interface modifier was added. The mixture was stirred thoroughly to obtain mixture A.

[0042] S102. Under nitrogen protection, 2 mL of acetone was added to mixture A. First, a magnetic rotor with a diameter of 1 cm was placed on a magnetic stirring table and stirred at 700 rpm for 8 hours. Then, 0.01 g of tannic acid and 0.02 g of auxiliary modifier were added, and the mixture was sonicated for 10 minutes at a frequency of 20 kHz. The magnetic rotor was then removed to obtain solution B.

[0043] S103. Wash the glass plate twice with water and then twice with ethanol, then dry it to complete the pretreatment and place it on a horizontal experimental table.

[0044] Under nitrogen protection, solution B was drop-coated onto a pretreated glass plate and dried at 25°C. After the solution evaporated, the film was peeled off to obtain a samarium-doped halide scintillation film for X-ray-near-infrared co-imaging.

[0045] In step S101, the interface modifier is polyethyleneimine (PEI) and triethylenetetramine (TETA) in a mass ratio of 3:1.

[0046] The auxiliary modifier in S102 is prepared by dissolving 0.1g of sodium gellan gum in 2g of deionized water at 60℃, adding 0.05g of sodium ditridecyl sulfosuccinate, and stirring until completely dissolved to obtain the auxiliary modifier.

[0047] Example 2

[0048] The fabrication process of the samarium-doped halide scintillation thin film for X-ray-near-infrared co-imaging provided in this embodiment is as follows:

[0049] S201, 0.06g CsEu 0.92 Sm 0.08 I3 crystal powder was added to 0.2g of polymethyl methacrylate (PMMA), and 0.004g of interface modifier was added. The mixture was stirred thoroughly to obtain mixture A.

[0050] S202. Under nitrogen protection, 1 mL of acetone was added to mixture A. First, a magnetic rotor with a diameter of 1 cm was placed on a magnetic stirring table and stirred at 550 rpm for 10 h. Then, 0.01 g of tannic acid and 0.012 g of auxiliary modifier were added, and the mixture was sonicated for 30 min at a frequency of 30 kHz. The magnetic rotor was then removed to obtain solution B.

[0051] S203. Wash the glass plate twice with water and then twice with ethanol, then dry it to complete the pretreatment and place it on a horizontal experimental table.

[0052] Under nitrogen protection, solution B was drop-coated onto a pretreated glass plate and dried at 25°C. After the solution evaporated, the film was peeled off to obtain a samarium-doped halide scintillation film for X-ray-near-infrared co-imaging.

[0053] The interface modifier in step S201 is the same as that in step S101.

[0054] The auxiliary modifier in S202 is prepared by dissolving 0.1g of sodium gellan gum in 2g of deionized water at 65℃, adding 0.075g of sodium tridecyl sulfosuccinate, and stirring until completely dissolved to obtain the auxiliary modifier.

[0055] Example 3

[0056] The fabrication process of the samarium-doped halide scintillation thin film for X-ray-near-infrared co-imaging provided in this embodiment is as follows:

[0057] S301, add 0.1g CsEu 0.9 Sm 0.1 I3 crystal powder was added to 0.2g of polymethyl methacrylate (PMMA), and 0.002g of interface modifier was added. The mixture was stirred thoroughly to obtain mixture A.

[0058] S302. Under nitrogen protection, 1 mL of acetone was added to mixture A. First, a magnetic rotor with a diameter of 0.8 cm was placed on a magnetic stirring table and stirred at 650 rpm for 8 hours. Then, 0.008 g of tannic acid and 0.01 g of auxiliary modifier were added, and the mixture was sonicated for 10 minutes at a frequency of 40 kHz. The magnetic rotor was then removed to obtain solution B.

[0059] S303. Wash the glass plate twice with water and then twice with ethanol, then dry it to complete the pretreatment and place it on a horizontal experimental table.

[0060] Under nitrogen protection, solution B was drop-coated onto a pretreated glass plate and dried at 28°C. After the solution evaporated, the film was peeled off to obtain a samarium-doped halide scintillation film for X-ray-near-infrared co-imaging.

[0061] In step S301, the interface modifier is polyethyleneimine (PEI) and triethylenetetramine (TETA) in a mass ratio of 3:2.

[0062] The auxiliary modifier in S302 is the same as the auxiliary modifier in S102.

[0063] Example 4

[0064] The fabrication process of the samarium-doped halide scintillation thin film for X-ray-near-infrared co-imaging provided in this embodiment is as follows:

[0065] S401, add 0.2g CsEu 0.92 Sm 0.08 I3 crystal powder was added to 1g of polymethyl methacrylate (PMMA), and 0.016g of interface modifier was added. The mixture was stirred thoroughly to obtain mixture A.

[0066] S402. Under nitrogen protection, 2.5 mL of acetone was added to mixture A. First, a magnetic rotor with a diameter of 1 cm was placed on a magnetic stirring table and stirred at 550 rpm for 9 hours. Then, 0.006 g of tannic acid and 0.01 g of auxiliary modifier were added, and the mixture was sonicated for 20 minutes at a frequency of 20 kHz. The magnetic rotor was then removed to obtain solution B.

[0067] S403. Wash the glass plate twice with water and then twice with ethanol, then dry it to complete the pretreatment and place it on a horizontal experimental table.

[0068] Under nitrogen protection, solution B was drop-coated onto a pretreated glass plate and dried at 30°C. After the solution evaporated, the film was peeled off to obtain a samarium-doped halide scintillation film for X-ray-near-infrared co-imaging.

[0069] In step S401, the interface modifier is polyethyleneimine (PEI) and triethylenetetramine (TETA) in a mass ratio of 3:2.

[0070] The auxiliary modifier in S402 is prepared by dissolving 0.1g of sodium gellan gum in 2g of deionized water at 65℃, adding 0.075g of sodium ditridecyl sulfosuccinate, and stirring until completely dissolved to obtain the auxiliary modifier.

[0071] Comparative Example 1

[0072] The difference from Example 2 is that no interface modifier is added in step S201 of this comparative example.

[0073] Comparative Example 2

[0074] The difference from Example 2 is that tannic acid and auxiliary modifiers are not added in step S202 of this comparative example.

[0075] Comparative Example 3

[0076] The difference from Example 2 is that in this comparative example, acetone is replaced with 1,2-dichloroethane in step S202, and tannic acid is not added.

[0077] The samarium-doped halide scintillation films for X-ray-near-infrared co-imaging (hereinafter referred to as "halide scintillation films") prepared by the preparation processes of the examples and comparative examples were tested.

[0078] Halides readily react with moisture in the air to form hydroxides, leading to material failure. Therefore, the deliquescence resistance was tested according to GB / T 1034-2008, "Test Method for Water Absorption of Plastics". 1g of a halide scintillation film was placed in a constant temperature and humidity chamber to simulate a deliquescence environment (temperature 25℃, relative humidity 85%, simulating the actual humid environment of use) for 72 hours. After removal, residual moisture was quickly wiped off with anhydrous ethanol, and the film was dried to constant weight. The final mass (m1) was measured, and the deliquescence weight gain rate was calculated.

[0079]

[0080] Table 1. Deliquescence weight gain of the examples and comparative examples

[0081]

[0082] In the auxiliary modifier, sodium gellan gum and sodium didecyl sulfosuccinate form a dense three-dimensional network, which effectively blocks moisture penetration and inhibits halide hydrolysis. In Example 3, the Sm content was slightly high, and powder agglomeration resulted in tiny voids in the protective layer, allowing moisture to easily penetrate through the voids, increasing the deliquescence weight gain rate and causing slight corrosion. Comparative Example 1 relied on PMMA as a protective agent, which was slightly insufficient in density. In Comparative Example 2, no auxiliary modifier or interface modifier was added, and the halide came into direct contact with moisture, resulting in the most severe deliquescence.

[0083] See Figure 2 As shown, this is the halide scintillation film prepared in Example 2. The film surface is smooth and dense, without powder particle agglomeration, and exhibits good film-forming properties. The interface modifier can reduce CsEu. 0.92 Sm 0.08 I3 has high surface energy, which improves its compatibility with PMMA; Figure 3 The curves show the comparison of the deliquescence resistance of the halide scintillation film prepared in Example 2 and the CsEuI3 powder under the same environmental conditions. It can be seen that the mass change of the film in air over time is significantly slower than that of the powder, and its stability is significantly better than that of the powder sample.

[0084] Depend on Figure 4It can be seen that the halide scintillation film prepared in Example 2 can generate a uniform and continuous luminescence signal under X-ray excitation, and the outline of the measured object is clear and the contrast is good, indicating that it has excellent X-ray imaging capability; from Figure 5 It can be seen that the halide scintillation film prepared in Example 2 can clearly present the internal structure and density differences of biological tissues, and can meet the requirements of X-ray imaging of biological tissues.

[0085] Figure 6 Near-infrared emission imaging results show that the halide scintillation film prepared in Example 2 maintains a high signal-to-noise ratio and clear outline in the near-infrared band, proving that the film can effectively convert X-rays into near-infrared emission and matches well with the spectral response of the silicon-based photodetector; combined with Figure 7 The spatial resolution test results of the line card show that the halide scintillation film of Example 2 still has good resolution for high spatial frequency line pairs, and the spatial resolution reaches the point where the line boundaries are clear and there is no obvious trailing. This shows that the halide scintillation film of this example has excellent environmental stability, as well as excellent X-ray imaging quality and high spatial resolution.

[0086] The addition of tannic acid effectively inhibits Eu 2+ Non-radiative transition, after X-ray excitation, Eu 2+ Quickly transfer energy to Sm 2 + This produces strong and stable near-infrared emission, reaching the threshold even at extremely low dose rates, enhancing the response to weak X-rays; further from Figure 8 It can be seen that the sample in Example 2 has a strength of 3755.1 nGy s. -1 up to 4929.2 nGy s -1 At all X-ray dose rates within the range, it exhibits strong radiative emission intensity and excellent linear response, with an X-ray detection limit of only 3498.3 nGy / s. -1 This is lower than the detection limit (5.5 µGy s) of commercially available scintillators (CsI(Tl)). -1 ).

[0087] The above description is merely a specific embodiment of this application, enabling those skilled in the art to understand or implement this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features claimed herein.

Claims

1. A process for preparing a samarium-doped halide scintillation thin film for X-ray-near-infrared co-imaging, characterized in that, It includes the following steps: S1, CsEu 1-x Sm x I3 crystal powder was added to PMMA, and after adding an interface modifier, the mixture was stirred thoroughly to obtain mixture A, where 0 < x ≤ 0.

1. The CsEu... 1-x Sm x The mass ratio of I3 crystal powder to PMMA is 1:1 to 1:5; S2. Add acetone to mixture A, stir magnetically, then add tannic acid and an auxiliary modifier, and sonicate to obtain solution B. The CsEu... 1-x Sm x The mass-to-volume ratio of I3 crystal powder to acetone is (0.6~1) g:10 mL, the mass of tannic acid is 2~5% of the mass of PMMA, and the amount of auxiliary modifier added is 1~2% of the mass of PMMA; S3. Solution B is dropped onto the pretreated substrate and dried at 25~30℃. After the solution evaporates, the film is peeled off to obtain a samarium-doped halide scintillation film for X-ray-near-infrared co-imaging. In S1, the interface modifier includes polyethyleneimine and triethylenetetramine in a mass ratio of 3:1~2; The amount of the interface modifier added is CsEu 1-x Sm x 2-8% of I3 mass; In step S2, the method for preparing the auxiliary modifier includes: At 60~65℃, sodium gellan gum was dissolved in deionized water, sodium tridecyl sulfosuccinate was added, and the mixture was stirred until completely dissolved to obtain the auxiliary modifier. The mass ratio of sodium gellan gum to sodium didecyl sulfosuccinate is 4:2~3.

2. The preparation process of samarium-doped halide scintillation thin films for X-ray-near-infrared co-imaging as described in claim 1, characterized in that: In S1, CsEu 1-x Sm x I3 crystals were prepared using the crucible lowering method and passed through a 300-mesh sieve to obtain CsEu. 1-x Sm x I3 crystal powder.

3. The preparation process of samarium-doped halide scintillation thin films for X-ray-near-infrared co-imaging as described in claim 1, characterized in that: In S2, the conditions for magnetic stirring are: the diameter of the magnetic rotor is 0.8~1cm, the stirring speed of the magnetic rotor is 550~700rpm, and the time is 8~10h.

4. The preparation process of samarium-doped halide scintillation thin films for X-ray-near-infrared co-imaging as described in claim 1, characterized in that: In step S3, the substrate is selected from a glass plate; The pretreatment includes the following steps: washing the glass plate sequentially with water and anhydrous ethanol, and then drying it to complete the pretreatment.

5. The preparation process of samarium-doped halide scintillation thin films for X-ray-near-infrared co-imaging as described in claim 1, characterized in that: Both steps S1 and S2 are performed in a protective atmosphere.

6. A samarium-doped halide scintillation thin film for X-ray-near-infrared co-imaging, characterized in that, The halide scintillation film is prepared using the samarium-doped halide scintillation film preparation process for X-ray-near-infrared co-imaging as described in any one of claims 1 to 5.

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