A low angle aluminum etching solution composition
By precisely controlling the etching of the Mo/Al/Mo film layer using a low-angle aluminum etching solution composition, the problem of excessively high etching angles in aluminum etching solutions was solved, improving the precision and yield of panel manufacturing.
CN121951537BActive Publication Date: 2026-07-07RUNJING (HEFEI) OPTOELECTRONIC MATERIALS CO LTD
Patent Information
- Application Number
- CN202610433676.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2026-04-03
- Publication Date
- 2026-07-07
- Estimated Expiration
- 2046-04-03
AI Technical Summary
Technical Problem
Existing aluminum etching solutions have difficulty in precisely controlling the etching angle in high-acid environments, resulting in excessively large sidewall angles of the aluminum film layer, which affects the performance of subsequent processes and product yield.
Method used
A low-angle aluminum etching solution composition is used, which includes components such as phosphoric acid, nitric acid, acetic acid, 6-azouridine and 3-amino-1,2,4-triazole. By controlling the etching speed and angle, precise etching of Mo/Al/Mo films can be achieved.
Benefits of technology
It effectively reduces the aluminum etching angle, improves the precision of panel manufacturing processes and product yield, and meets the requirements of high-precision processes.
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Figure CN121951537B_ABST
Abstract
The present application relates to the technical field of etching solution, in particular to a low-angle aluminum etching solution composition, which comprises the following components in mass percentage: phosphoric acid, nitric acid, acetic acid, 6-nitrourea, 3-amino-1,2,4-triazole, and the balance is deionized water. The present application uses nitric acid for oxidation, phosphoric acid for etching, acetic acid for adjusting the pH of the etching solution, and 6-nitrourea and 3-amino-1,2,4-triazole cooperate to reduce the etching of aluminum. Through the combination with Al, the etching speed of Al is reduced, while the etching of Mo layer is slightly faster. The etching speed of Mo and Al is controlled to control the angle. While effectively etching Al, the Al angle is reduced as much as possible, which is of great significance to improve the fineness of panel manufacturing process and product yield.
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Citation Information
Patent Citations
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