Semiconductor processing device and upper electrode assembly thereof

Abstract

The invention discloses a semiconductor processing device and an upper electrode assembly thereof. The upper electrode assembly comprises a mounting substrate and a gas spray head arranged below the mounting substrate. The mounting substrate comprises a mounting main body, the thickness of a central area of the mounting main body is smaller than that of an edge area of the mounting main body, the thermal expansion size difference of the heated mounting main body in the vertical direction from the central area to the edge area can be reduced, and a mounting gap is reserved between the mounting substrate and a cavity top cover for containing the mounting substrate. A gap fixing mode is adopted between the mounting base plate and the cavity top cover, so that thermal stress generated when the mounting base plate is heated to expand can be fully released, the mounting main body is directly connected with the mounting connecting part, the force lines of thermal expansion of the mounting base plate in the horizontal direction are the same, extrusion of the side wall of the mounting base plate is avoided, and the mounting effect is improved. The thermal stress borne by the mounting substrate is reduced, the heat conduction distance is shortened, the temperature difference of different areas of the mounting substrate is further reduced, and protruding deformation of the mounting substrate is reduced.

Description

Technical Field

[0001] This invention relates to the field of semiconductors, and more particularly to a semiconductor processing apparatus and its electrode assembly. Background Technology

[0002] In a semiconductor processing device, a gas spray head is mounted on a chamber cover located at the top of the chamber via a mounting substrate. The gas spray head serves as the upper electrode, which introduces reactive gas into the semiconductor processing device. A base is provided inside the chamber to support the substrate to be processed. The base is located below the upper electrode. Radio frequency power is applied to the upper or lower electrode to generate a radio frequency electric field between the upper and lower electrodes, which dissociates the reactive gas into plasma to process the substrate.

[0003] During high-power processes in semiconductor processing devices, the intense thermal effect of plasma causes the gas spray head to heat up rapidly. The heat from the gas spray head needs to be cooled by coolant in cooling pipes within the mounting substrate. Since these cooling pipes must avoid the gas channels inside the mounting substrate, they must be placed on the periphery. This results in a temperature difference on the mounting substrate during heat conduction from the gas spray head to the cooling pipes, with the temperature in the center of the mounting substrate being higher than the outer periphery. Because the mounting substrate is made of metal with a high coefficient of thermal expansion, it deforms under heat. This temperature difference causes inconsistent radial deformation. Furthermore, because the mounting substrate is mounted on the chamber cover, its outer surface is constrained by the mounting dimensions and cannot deform outwards. Ultimately, this causes the mounting substrate to bulge downwards, lifting the gas spray head located below it. This results in an uneven gap between the gas spray head and the mounting substrate, increasing the risk of plasma ignition and arcing at this point. It also causes changes in capacitance at the gap, altering the radio frequency circuit within the semiconductor processing device and causing deviations in process results.

[0004] The statements herein provide only background information in relation to this invention and do not necessarily constitute prior art. Summary of the Invention

[0005] The purpose of this invention is to provide a semiconductor processing apparatus and its electrode assembly to reduce protrusion deformation of the mounting substrate, reduce the uneven gap between the gas spray head and the mounting substrate, prevent plasma ignition and arc discharge, and ensure process safety and product yield.

[0006] To achieve the above objectives, the present invention provides an upper electrode assembly for a semiconductor processing apparatus, the semiconductor processing apparatus including a chamber body, the upper electrode assembly comprising:

[0007] The mounting substrate includes a mounting body, which includes a central region and an edge region surrounding the central region. The thickness of the central region is less than the thickness of the edge region. The mounting substrate also includes a mounting connection portion extending outward from the edge region.

[0008] A gas spray head, located below the mounting body, is used to introduce reactive gas into the chamber body, the reactive gas being used to form plasma.

[0009] Optionally, the upper surface of the mounting body is arc-shaped, and the arc protrudes towards the gas spray head.

[0010] Optionally, the upper surface of the mounting body is stepped, and the thickness of the mounting body gradually decreases from the edge region to the center region.

[0011] Optionally, a cooling pipe is provided in the mounting connection part, and coolant is introduced into the cooling pipe to cool the mounting base plate and the gas spray head.

[0012] Optionally, a heater is also provided on the upper surface of the mounting body, the heater making surface contact with the mounting body, and the shape of the lower surface of the heater matching the shape of the upper surface of the mounting body.

[0013] Optionally, a gas baffle is provided above the mounting base plate. The gas baffle is connected to a gas source and is used to transport the reaction gas from the gas source through the mounting base plate to the gas spray head. The gas baffle is disposed on the upper surface of the mounting body, and the shape of the gas baffle matches the shape of the upper surface of the mounting body.

[0014] Optionally, the mounting substrate may be made of aluminum alloy; the gas spray head may be made of silicon, silicon carbide, aluminum alloy, alumina ceramic, aluminum nitride ceramic, or quartz.

[0015] Optionally, the lower surface of the mounting body protrudes towards the gas spray head relative to the lower surface of the mounting connection.

[0016] The present invention also provides a semiconductor processing apparatus, comprising:

[0017] The main body of the chamber, including the chamber sidewalls;

[0018] A chamber cover is disposed on top of the sidewall of the chamber, and the chamber cover has an opening extending through its thickness;

[0019] The upper electrode assembly extends into the chamber body through the opening, and there is a gap between the side wall of the mounting body and the side wall of the opening.

[0020] The base is disposed within the main body of the chamber, below the upper electrode assembly, and opposite to the gas spray head, and is used to support the substrate to be processed.

[0021] Optionally, a gasket is also provided between the mounting connection and the chamber cover. By replacing the gasket with one of different thicknesses, the distance between the gas spray head and the base can be changed.

[0022] Optionally, the mounting connection is connected to the upper part of the edge region of the mounting body, and the lower surface of the gas spray head is lower than the lower surface of the chamber cover.

[0023] Optionally, the distance between the gas spray head and the base can be changed by replacing the mounting base with one of different thicknesses.

[0024] Optionally, the semiconductor processing device has a drive mechanism connected to the base for driving the base to move up and down to adjust the distance between the gas spray head and the base.

[0025] Optionally, the width of the gap is in the range of 2mm-10mm.

[0026] Optionally, the mounting connection portion has a first mounting through hole, and a first connector passes through the first mounting through hole for fixing the mounting connection portion to the chamber cover; the mounting body has a second mounting through hole, and a second connector passes through the second mounting through hole for fixing the mounting body to the gas spray head.

[0027] Optionally, the first mounting through hole and / or the second mounting through hole are oblong or elliptical holes.

[0028] Compared with the prior art, the technical solution of the present invention has at least the following beneficial effects:

[0029] This invention reduces the difference in vertical thermal expansion between the center and edge regions of the mounting body after heating by making the thickness of the central region less than that of the edge regions, thus minimizing downward bulging deformation of the mounting body. The chamber top cover has an opening extending through its thickness to accommodate the mounting substrate. A pre-existing installation gap between the sidewall of the mounting substrate and the sidewall of the opening in the chamber top cover allows for sufficient release of thermal stress generated during the thermal expansion of the mounting substrate, further reducing bulging deformation. The mounting substrate eliminates its sidewalls, directly connecting the mounting body to the mounting connection, ensuring that the force lines of horizontal thermal expansion of the mounting substrate are aligned, reducing thermal stress on the mounting substrate, shortening the heat conduction distance, and further reducing temperature differences between different regions of the mounting substrate, thus minimizing bulging deformation. This invention reduces bulging deformation of the mounting substrate, thereby reducing uneven gaps between the gas spray head and the mounting substrate, reducing the risk of plasma ignition and arc discharge, and ensuring process safety and product yield. Attached Figure Description

[0030] Figure 1 This is a schematic diagram of the structure of a semiconductor processing device.

[0031] Figure 2 This is a schematic diagram of the structure of a semiconductor processing device according to the present invention.

[0032] Figure 3 This is a schematic diagram of the structure of an upper electrode assembly according to the present invention.

[0033] Figure 4 This is a schematic diagram of another upper electrode assembly of the present invention. Detailed Implementation

[0034] The following is based on Figures 1-4 The preferred embodiments of the present invention will be described in detail below.

[0035] like Figure 1As shown, a semiconductor processing apparatus includes a chamber body 1, which includes a chamber sidewall 101. A chamber cover 2 is disposed on the top of the chamber sidewall 101, and the chamber cover 2 has an opening 201. An upper electrode assembly 3 is installed in the opening 201. The upper electrode assembly 3 is connected to a gas source (not shown in the figure), and a reaction gas from the gas source is introduced into the chamber body 1 through the upper electrode assembly 3. A base 4 is disposed in the chamber body 1, located below the upper electrode assembly 3, and the base 4 is used to support a substrate 5 to be processed. The base 4 serves as a lower electrode, and a reaction region 6 is formed between the lower electrode and the upper electrode assembly 3. An radio frequency power supply (not shown in the figure) is applied to one of the upper electrode assembly 3 or the lower electrode, generating a radio frequency electric field in the reaction region 6 between the upper electrode assembly 3 and the lower electrode to dissociate the reaction gas into plasma. The plasma contains a large number of active particles such as electrons, ions, excited-state atoms, molecules and free radicals. These active particles can undergo various physical and chemical reactions with the surface of the substrate 5 to be treated, thereby changing the morphology of the surface of the substrate 5.

[0036] The upper electrode assembly 3 includes a mounting base 301 disposed on the chamber cover 2 and a gas spray head 302 disposed below the mounting base 301. The mounting base 301 includes a mounting body 303, a mounting base sidewall 304, and a mounting connection portion 305. The mounting body 303 extends into the chamber body 1 through the opening 201 on the chamber cover 2. The mounting body 303 has multiple gas channels (not shown in the figure). A gas baffle 306 is disposed above the mounting body 303 and is connected to a gas source. The gas baffle 306 is used to transport the reaction gas from the gas source through the gas channels on the mounting body 303 to the gas spray head 302, which then introduces the reaction gas into the interior of the chamber body 1. The mounting connection portion 305 is connected to the edge region of the mounting body 303 through the mounting base sidewall 304 and is fixedly connected to the chamber cover 2.

[0037] The mounting base plate 301 is configured as a downwardly recessed bowl-shaped structure. The mounting connection part 305 is used to hang the mounting base plate 301 on the chamber cover 2, and the mounting body 303 is used to fix the gas spray head 302. This achieves separate installation of the gas spray head 302 and the chamber cover 2. If it is necessary to replace or repair the gas spray head 302, it is only necessary to remove the mounting base plate 301 and the gas spray head 302 from the chamber cover 2, without having to completely disassemble the chamber body 1 and the chamber cover 2. This simplifies the maintenance process and saves costs.

[0038] In some semiconductor manufacturing processes, it is necessary to strictly limit the distance between the gas spray head 302 and the substrate 5. The mounting substrate 301 includes a mounting substrate sidewall 304, so that the gas spray head 302 can extend from the opening 201 into the chamber body 1 to achieve the required distance from the base 4.

[0039] Since the mounting body 303 has multiple gas channels, it is not possible to install a cooling device on the mounting body 303. Instead, a cooling pipe 307 is installed in the mounting connection part 305. Coolant is introduced into the cooling pipe 307 to cool the mounting base plate 301 and the gas spray head 302.

[0040] A heater 308 is also provided above the mounting body 303. The heater 308 avoids the gas passage on the mounting body 303 so as not to block the gas passage. The heater 308 is used to heat the mounting base plate 301 and the gas spray head 302.

[0041] When high-power processes are performed in a semiconductor processing device, the heat effect of plasma is very strong, causing the gas spray head 302 to heat up rapidly. The heat on the gas spray head 302 needs to be cooled by the coolant in the mounting substrate 301. At this time, the heat conduction direction is: gas spray head 302 (vertically upward) → mounting body 303 (horizontal direction) → mounting substrate sidewall 304 (vertically upward) → mounting connection part 305. The mounting connection part 305 is provided with a cooling pipe 307 for cooling. Because the heat conduction path is long, there will be a temperature difference along the heat conduction direction of the mounting substrate 301. The temperature gradient is: the temperature of the central area of ​​the mounting body 303 is higher than the temperature of the edge area of ​​the mounting body 303, the temperature of the edge area of ​​the mounting body 303 is higher than the temperature of the mounting substrate sidewall 304, and the temperature of the mounting substrate sidewall 304 is higher than the temperature of the mounting connection part 305.

[0042] The mounting substrate 301 is made of aluminum alloy, and the gas spray head 302 is made of materials including silicon, silicon carbide, aluminum alloy, alumina ceramic, aluminum nitride ceramic, or quartz. Due to the significant difference in their coefficients of thermal expansion, at higher temperatures, the thermal expansion of the mounting body 303 is greater than that of the gas spray head 302. This causes the gas spray head 302, mounted below the mounting body 303, to be lifted up, resulting in an uneven gap between the gas spray head 302 and the mounting body 303. This can easily trigger plasma ignition and arc discharge at this location, and also causes a change in the capacitance between the gas spray head 302 and the mounting body 303, thereby altering the radio frequency circuit in the reaction chamber 1 and causing deviations in the process results.

[0043] like Figure 1As shown, the thermal expansion of the mounting substrate 301 mainly occurs in the horizontal and vertical directions. In the horizontal direction, because the overall temperature of the mounting substrate 301 is 100°C to 200°C higher than room temperature, the thermal expansion of the mounting body 303 in the horizontal direction is restricted by the side wall 304 of the mounting substrate, preventing normal expansion. Simultaneously, the side wall 304 is also limited by the size of the opening 201 on the chamber cover 2. The thermal stress accumulated inside the mounting body 303 causes it to deform downwards. Furthermore, because the gas baffle 306 and heater 308 are located above the mounting body 303, the gravity of these devices causes the mounting body 303 to bulge downwards even further.

[0044] On the other hand, in the vertical direction, due to the temperature difference between the central and edge areas of the mounting body 303, the thermal expansion dimensions of the mounting body 303 at different diameter positions are different in the vertical direction. The closer to the center, the higher the temperature, and the greater the thermal expansion in the vertical direction, which makes the central area of ​​the mounting body 303 bulge downward more severely than the edge area.

[0045] In view of this, the present invention improves the structure of the mounting substrate 301, such as... Figure 2 As shown, it should be noted that, apart from the mounting substrate 301, the other features are the same as those shown. Figure 1 The corresponding features are the same, so they will not be elaborated upon here. The following is a detailed explanation of... Figure 1 The differences in the embodiments are as follows: First, the thickness of the central region 3033 of the mounting body 303 is less than the thickness of the edge region 3034 of the mounting body 303; the closer to the center, the smaller the thickness. The linear thermal expansion of materials follows the law: ΔL = α × L × ΔT, where ΔL is the amount of expansion, α is the coefficient of linear thermal expansion, L is the original size of the material, and ΔT is the temperature difference before and after the expansion. Therefore, under the same temperature difference, the smaller the original size L of the material, the smaller the amount of linear thermal expansion. Although the temperature of the central region of the mounting body 303 is higher than that of the edge region of the mounting body 303, by reducing the thickness of the central region 3033 of the mounting body 303 where the temperature is higher, the linear thermal expansion of the central region 3033 and the edge region 3034 of the mounting body 303 in the vertical direction after heating is similar, thereby minimizing the downward protrusion of the mounting body 303, reducing the uneven gap between the gas spray head 302 and the mounting body 303, preventing plasma ignition and arc discharge, and ensuring process safety and product yield.

[0046] In one embodiment of the present invention, such as Figure 3As shown, the upper surface 3032 of the mounting body 303 is stepped, and the thickness of the mounting body 303 gradually decreases in a stepped manner from the edge region 3034 to the center region 3033. Correspondingly, to adapt to the shape of the upper surface 3032 of the mounting body 303, the gas baffle 306 and heater 308 disposed on the mounting body 303 are also adaptively adjusted. The gas baffle 306 is disposed on the upper surface 3032 of the mounting body 303. A gas channel is formed between the partition 3061 in the gas baffle 306 and the stepped upper surface 3032, and the length and spacing of the partition 3061 match the height and spacing of each step of the upper surface 3032 to ensure gas sealing. The heater 308 is disposed on the stepped surface of the upper surface 3032 of the mounting body 303. The width of the heater 308 matches the width of the step of the upper surface 3032, allowing the heater 308 to have sufficient surface contact with the mounting body 303 to improve heating efficiency. Setting the upper surface 3032 of the mounting body 303 as stepped not only reduces the thickness of the central region 3033 of the mounting body 303, solving the problem of bulging deformation of the mounting body 303 due to thermal expansion differences, but also provides a more stable fixation for the gas baffle 306 and the heater 308, ensuring the stability of the device connection.

[0047] In another embodiment of the invention, such as Figure 2 and 4 As shown, the upper surface 3032 of the mounting body 303 is set in an arc shape, and the arc shape extends towards the base 4 (see...). Figure 2The upper surface 3032 of the mounting body 303 protrudes in the direction of the arc. A specific arc curve obtained through computer simulation is used to finely machine the upper surface 3032 of the mounting body 303. This ensures that, under fixed plasma heating power, a fixed upper electrode assembly connection method, and a fixed cooling power of the cooling pipe 307, the thermal expansion of the mounting body 303 from its center to any point on its edge is equal in the vertical direction. This completely solves the problem of the mounting body 303 bulging downwards due to uneven heating. Correspondingly, to adapt to the arc shape of the upper surface 3032 of the mounting body 303, the gas baffle 306 and heater 308 on the mounting body 303 are also adaptively adjusted. A gas channel is formed between the partition 3061 in the gas baffle 306 and the arc-shaped upper surface 3032. The bottom surface of the partition 3061 matches the curvature of the upper surface 3032 to ensure gas sealing. The heater 308 is disposed on the upper surface 3032 of the mounting body 303. The lower surface of the heater 308 is also arc-shaped, and the arc of the lower surface of the heater 308 matches the arc of the upper surface 3032, ensuring sufficient surface contact between the heater 308 and the mounting body 303 to improve heating efficiency. The heater 308 is arranged around the gas baffle 306.

[0048] Secondly, such as Figure 2 As shown, the size of the opening 201 on the chamber cover 2 is larger than the size of the mounting body 303, creating a gap 309 between the sidewall of the mounting body 303 and the sidewall of the opening 201. The width of the gap 309 ranges from 2mm to 10mm. When the mounting body 303 expands due to heat, the gap 309 allows the mounting body 303 to deform to a certain extent in the horizontal direction, releasing the thermal stress on the mounting body 303 and reducing the downward protrusion of the mounting body 303. This reduces the uneven gap between the gas spray head 302 and the mounting body 303, preventing plasma ignition and arc discharge, and ensuring process safety and product yield.

[0049] Furthermore, the fastening structure between the mounting base plate 301 and the chamber cover 2, and the fastening structure between the mounting base plate 301 and the gas spray head 302 are improved. The mounting connection portion 305 has a first mounting through hole (not shown in the figure), and a first connector (not shown in the figure) passes through the first mounting through hole to fix the mounting connection portion 305 to the chamber cover 2. The mounting body 303 has a second mounting through hole (not shown in the figure), and a second connector (not shown in the figure) passes through the second mounting through hole to fix the mounting body 303 to the gas spray head 302. In this embodiment, the first mounting through hole and / or the second mounting through hole are set as oblong holes or elliptical holes. The first and / or second mounting through holes are oblong or elliptical holes, providing a certain amount of movement space for the first and second connectors. When the mounting substrate 301 deforms due to thermal expansion, the first and / or second connectors are displaced in the horizontal direction along with the deformation of the mounting substrate 301. This gap fixing method allows the first and second connectors to be displaced to a certain extent without affecting the tightness of the connection, thereby releasing the thermal stress of the mounting substrate 301 in the horizontal direction, reducing the downward protrusion of the mounting body 303, reducing the uneven gap between the gas spray head 302 and the mounting body 303, preventing plasma ignition and arc discharge, and ensuring process safety and product yield.

[0050] In addition, such as Figure 2 As shown, the upper part of the edge region 3034 of the mounting body 303 is connected to the mounting connection part 305. The lower surface 3031 of the mounting body 303 protrudes towards the gas spray head 302 relative to the lower surface 3051 of the mounting connection part 305. The lower surface of the gas spray head 302 is lower than the lower surface 21 of the chamber cover 2.

[0051] In this embodiment, the mounting substrate 301 does not have mounting substrate sidewalls. The mounting body 303 is connected to the mounting connection portion 305, changing the original bowl-shaped structure of the mounting substrate 301 into a disc-shaped structure. By omitting the mounting substrate sidewalls, the mounting body 303 and the mounting connection portion 305 are integrated into one unit, and their horizontal expansion forces are aligned. Removing the compression from the mounting substrate sidewalls reduces thermal stress on the mounting body 303, making it less susceptible to compression and less prone to localized bulging. By omitting the sidewall of the mounting substrate, the heat transfer distance from the center of the mounting body 303 to the cooling pipe 307 in the mounting connection 305 is shorter and smoother, resulting in higher thermal conductivity. The temperature difference between the center and the edge of the mounting body 303 is also reduced, thereby reducing the difference in thermal expansion between the center and the edge of the mounting body 303. This reduces the downward protrusion of the mounting body 303, thereby reducing the uneven gap between the gas spray head 302 and the mounting body 303, preventing plasma ignition and arc discharge, and ensuring process safety and product yield.

[0052] After omitting the sidewall of the mounting substrate, the distance between the gas spray head 302 and the base 4 can be adjusted in the following ways: one way is to change the distance between the gas spray head 302 and the base 4 by replacing the mounting substrate 301 with one of different thicknesses; another way is to change the distance between the gas spray head 302 and the base 4 by driving the base 4 to move up and down. The semiconductor processing device has a drive mechanism (not shown in the figure) connected to the base 4 for driving the base 4 to move up and down to adjust the distance between the gas spray head 302 and the base 4. Another method is to provide a gasket (not shown in the figure) between the mounting connection 305 and the chamber cover 2, and change the distance between the gas spray head 302 and the base 4 by replacing the gasket with one of different thicknesses.

[0053] This invention reduces the difference in vertical thermal expansion dimensions of the mounting body from the center to the edge regions after heating by making the thickness of the central region of the mounting body smaller than the thickness of the edge regions, thus reducing bulging deformation of the mounting body. By leaving a mounting gap between the mounting substrate and the top cover of the chamber accommodating the mounting substrate, and using a gap-fixing method between the mounting substrate and the top cover, the thermal stress generated during the thermal expansion of the mounting substrate can be fully released, further reducing bulging deformation. The connection between the mounting body and the mounting connection portion ensures that the force lines of thermal expansion of the mounting substrate in the horizontal direction are the same, eliminating the compression from the sidewalls of the mounting substrate, reducing the thermal stress on the mounting substrate, and shortening the heat conduction distance, further reducing the temperature difference between different regions of the mounting substrate, and minimizing bulging deformation. This invention minimizes bulging deformation of the mounting substrate to reduce uneven gaps between the gas spray head and the mounting substrate, preventing plasma ignition and arc discharge, ensuring process safety and product yield.

[0054] It should be noted that, in the embodiments of the present invention, the terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "longitudinal," and "circumferential," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing the embodiments. They do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0055] In this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0056] It should be understood that, when used in this specification and the appended claims, the term "comprising" indicates the presence of the described features, integrals, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.

[0057] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the scope of the application. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.

[0058] It should also be further understood that the term “and / or” as used in this application specification and the appended claims means any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0059] As used in this specification and the appended claims, the term "if" may be interpreted, depending on the context, as "when," "once," "in response to determination," or "in response to detection." Similarly, the phrases "if determined" or "if [described condition or event] is detected" may be interpreted, depending on the context, as "once determined," "in response to determination," "once [described condition or event] is detected," or "in response to detection of [described condition or event]."

[0060] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without inventive effort are within the scope of protection of the present invention. After reading the above content, various modifications and substitutions to the present invention will be obvious to those skilled in the art. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. An upper electrode assembly for a semiconductor processing apparatus, the semiconductor processing apparatus comprising a chamber body, characterized in that, include: The mounting substrate includes a mounting body, which includes a central region and an edge region surrounding the central region. The thickness of the central region is less than the thickness of the edge region. The mounting substrate also includes a mounting connection portion extending outward from the edge region. A gas spray head, located below the mounting body, is used to introduce reactive gas into the chamber body, the reactive gas being used to form plasma.

2. The upper electrode assembly as described in claim 1, characterized in that, The upper surface of the mounting body is arc-shaped, and the arc protrudes towards the gas spray head.

3. The upper electrode assembly as described in claim 1, characterized in that, The upper surface of the mounting body is stepped, and the thickness of the mounting body gradually decreases from the edge area to the center area.

4. The upper electrode assembly as described in claim 2 or 3, characterized in that, A cooling pipe is provided in the mounting connection part, and coolant is introduced into the cooling pipe to cool the mounting base plate and the gas spray head.

5. The upper electrode assembly as described in claim 4, characterized in that, The upper surface of the mounting body is also provided with a heater, which makes surface contact with the mounting body, and the shape of the lower surface of the heater matches the shape of the upper surface of the mounting body.

6. The upper electrode assembly as described in claim 5, characterized in that, A gas baffle is provided above the mounting base plate. The gas baffle is connected to a gas source and is used to transport the reaction gas from the gas source through the mounting base plate to the gas spray head. The gas baffle is disposed on the upper surface of the mounting body, and the shape of the gas baffle matches the shape of the upper surface of the mounting body.

7. The upper electrode assembly as claimed in claim 1, characterized in that, The mounting substrate is made of aluminum alloy; the gas spray head is made of silicon, silicon carbide, aluminum alloy, alumina ceramic, aluminum nitride ceramic, or quartz.

8. The upper electrode assembly as claimed in claim 1, characterized in that, The lower surface of the mounting body protrudes towards the gas spray head relative to the lower surface of the mounting connection.

9. A semiconductor processing apparatus, characterized in that, include: The main body of the chamber, including the chamber sidewalls; A chamber cover is disposed on top of the sidewall of the chamber, and the chamber cover has an opening extending through its thickness; The upper electrode assembly as described in any one of claims 1-8, wherein the upper electrode assembly extends into the chamber body through the opening, and there is a gap between the sidewall of the mounting body and the sidewall of the opening; The base is disposed within the main body of the chamber, below the upper electrode assembly, and opposite to the gas spray head, and is used to support the substrate to be processed.

10. The semiconductor processing apparatus as claimed in claim 9, characterized in that, A gasket is also provided between the mounting connection and the chamber cover. By replacing the gasket with one of different thicknesses, the distance between the gas spray head and the base can be changed.

11. The semiconductor processing apparatus as claimed in claim 9, characterized in that, The mounting connection is connected to the upper part of the edge area of ​​the mounting body, and the lower surface of the gas spray head is lower than the lower surface of the chamber cover.

12. The semiconductor processing apparatus as claimed in claim 9, characterized in that, The distance between the gas spray head and the base can be changed by replacing the mounting base with one of different thicknesses.

13. The semiconductor processing apparatus as claimed in claim 9, characterized in that, The semiconductor processing device also includes a drive mechanism connected to the base for driving the base to move up and down to adjust the distance between the gas spray head and the base.

14. The semiconductor processing apparatus as claimed in claim 9, characterized in that, The width of the gap ranges from 2mm to 10mm.

15. The semiconductor processing apparatus as claimed in claim 9, characterized in that, The mounting connection part has a first mounting through hole, and a first connector passes through the first mounting through hole for fixing the mounting connection part to the chamber cover. The mounting body has a second mounting through hole, and a second connector passes through the second mounting through hole for fixing the mounting body to the gas spray head. The first mounting through hole and / or the second mounting through hole are oblong or elliptical holes.

Images