Display device, method of manufacturing display device, and electronic device

Abstract

A display device, a method of manufacturing the display device, and an electronic device are provided. The display device includes: a light emitting element layer disposed on a substrate; a thin film encapsulation layer disposed on the light emitting element layer; a counter substrate facing the substrate; a color filter layer disposed on a surface of the counter substrate and defining a light blocking region and a light transmitting region; a wavelength conversion layer disposed on the color filter layer; and a filling layer disposed between the wavelength conversion layer and the thin film encapsulation layer, in which the wavelength conversion layer includes: a bank overlapping the light blocking region; light-transmitting members disposed between portions of the bank and spaced apart from each other; and organic layers spaced apart from each other and covering the light-transmitting member, in which the bank is interposed between the organic layers, and lower surfaces of the organic layers and lower surfaces of the bank are disposed on the same layer.

Description

Technical Field

[0001] This disclosure relates to display devices, methods of manufacturing display devices, and electronic devices. Background Technology

[0002] As the information society becomes more complex and developed, the demand for display devices for displaying images is increasing in various forms. For example, display devices are used in a variety of electronic devices such as smartphones, digital cameras, laptops, navigation devices, and smart TVs.

[0003] Display devices can be flat panel displays such as liquid crystal displays, field emission displays, and light-emitting displays. Light-emitting displays can include organic light-emitting displays that include organic light-emitting elements, inorganic light-emitting displays that include inorganic light-emitting elements such as inorganic semiconductors, and ultra-miniature light-emitting displays that include ultra-miniature light-emitting elements.

[0004] An organic light-emitting element may include two electrodes facing each other and a light-emitting layer between them. The light-emitting layer can receive electrons and holes from the two electrodes, recombine them to generate excitons, and emit light when the generated excitons transition from an excited state to a ground state.

[0005] Because organic light-emitting display devices, which include organic light-emitting elements, do not require light sources such as backlight units, they consume little power, can be manufactured to be lightweight and thin, and can offer wide viewing angles, high brightness and contrast, as well as fast response times. Due to these high-quality characteristics, organic light-emitting display devices are gaining attention as the next generation of display devices. Summary of the Invention

[0006] This disclosure provides a display device, a method for manufacturing the display device, and an electronic device that can solve the problem of residual perfluorinated compounds and improve display quality.

[0007] However, the aspects of this disclosure are not limited to those set forth herein. These and other aspects of the disclosure will become more apparent to those skilled in the art upon reference to the detailed description of the disclosure given below.

[0008] According to an aspect of this disclosure, a display device includes: a light-emitting element layer disposed on a substrate; a thin-film encapsulation layer disposed on the light-emitting element layer; a substrate facing the substrate; a color filter layer disposed on the surface of the substrate and defining a light-blocking region and a plurality of light-transmitting regions; a wavelength conversion layer disposed on the color filter layer; and a filler layer disposed between the wavelength conversion layer and the thin-film encapsulation layer, wherein the wavelength conversion layer includes: a dam overlapping the light-blocking region; a plurality of light-transmitting members disposed between portions of the dam and spaced apart from each other; and organic layers spaced apart from each other and covering the light-transmitting members, wherein the dam is located between the organic layers, and the lower surface of the organic layer and the lower surface of the dam are disposed in the same layer.

[0009] In one embodiment, the embankment and the organic layer may contact the filling layer.

[0010] In this embodiment, the organic layer may overlap with the light-transmitting area and may not overlap with the light-blocking area.

[0011] In an embodiment, the refractive index of each organic layer in the organic layer may be less than approximately 1.7.

[0012] In this embodiment, the dike may be non-hydrophobic.

[0013] In one embodiment, the display device may further include a first cover layer overlapping the organic layer and the embankment.

[0014] In this embodiment, the upper surface of the organic layer can contact the light-transmitting member, and the lower surface of the organic layer can contact the first capping layer.

[0015] In an embodiment, the first capping layer may be formed flat.

[0016] In an embodiment, the display device may further include a second cover layer disposed between the light-transmitting member and the organic layer and covering the light-transmitting member.

[0017] In an embodiment, the display device may further include third cover layers spaced apart from each other and extending along the side surface of the dikes, wherein the dikes are disposed between the third cover layers.

[0018] In an embodiment, the organic layer may be surrounded by a first capping layer and a third capping layer.

[0019] In an embodiment, the display device may further include a first cover layer disposed between the light-transmitting member and the organic layer and covering the light-transmitting member.

[0020] In one embodiment, the first capping layer may be provided as a plurality of first capping layers spaced apart from each other and extending along the side surface of the dike, wherein the dike is situated between the plurality of first capping layers.

[0021] According to an aspect of this disclosure, a method for manufacturing a display device includes: forming a dam on a first substrate; forming a hydrophobic layer on an upper surface of the dam by performing an ashing process and a plasma process on the dam; forming a plurality of light-transmitting members between portions of the dam; forming an organic material layer on the dam, the hydrophobic layer, and the light-transmitting members; forming an organic layer by removing a portion of the organic material layer and the hydrophobic layer; forming a filler layer on the dam and the organic layer; and bonding the first substrate to a second substrate facing the first substrate.

[0022] In an embodiment, the ashing process may be a plasma treatment process that uses Ar, N2, He, or O2 gas or a mixture thereof as the reaction gas.

[0023] In this embodiment, the plasma process may use CF4 gas.

[0024] In an embodiment, the method may further include forming a first capping layer on the dike, the hydrophobic layer, and the light-transmitting member prior to the formation of the organic material layer, wherein a portion of the first capping layer may be removed while removing a portion of the organic material layer and the hydrophobic layer.

[0025] In an embodiment, the method may further include forming a second capping layer on the dike, the first capping layer, and the organic layer prior to the formation of the filling layer.

[0026] In an embodiment, the method may further include forming a color filter layer on a first substrate prior to the formation of the dam, wherein the second substrate may include a light-emitting element layer comprising a plurality of light-emitting elements and a thin film encapsulation layer formed on the light-emitting element layer, and the dam may be formed on the color filter layer.

[0027] In an embodiment, the method may further include forming a color filter layer on a second substrate prior to the formation of the dam, wherein the first substrate may include a light-emitting element layer comprising a plurality of light-emitting elements and a thin-film encapsulation layer formed on the light-emitting element layer, and the dam may be formed on the thin-film encapsulation layer.

[0028] According to an aspect of this disclosure, an electronic device includes: a display device for providing an image; a processor for providing image data signals to the display device; a memory for storing data information for operation; and a power module for generating power, wherein the display device includes: a light-emitting element layer disposed on a substrate; a thin-film encapsulation layer disposed on the light-emitting element layer; a substrate facing the substrate; a color filter layer disposed on the surface of the substrate and defining a light-blocking region and a plurality of light-transmitting regions; a wavelength conversion layer disposed on the color filter layer; and a filler layer disposed between the wavelength conversion layer and the thin-film encapsulation layer, wherein the wavelength conversion layer includes: a dam overlapping the light-blocking region; a plurality of light-transmitting members disposed between portions of the dam and spaced apart from each other; and organic layers spaced apart from each other and covering the light-transmitting members, wherein the dam is between the organic layers, and the lower surface of the organic layer and the lower surface of the dam are disposed in the same layer. Attached Figure Description

[0029] The above and / or other aspects will become apparent and more readily understood from the following description of embodiments taken in conjunction with the accompanying drawings, in which:

[0030] Figure 1 This is a schematic plan view of a display device according to an embodiment;

[0031] Figure 2 This is a schematic layout diagram showing lines included in a display device according to an embodiment;

[0032] Figure 3 This is a schematic diagram of the equivalent circuit of a sub-pixel according to an embodiment;

[0033] Figure 4 This is a schematic cross-sectional view of a display device according to an embodiment;

[0034] Figure 5 This is a schematic cross-sectional view of a display device according to an embodiment;

[0035] Figures 6 to 12 This is a schematic cross-sectional view illustrating each process in the method of manufacturing a display device according to an embodiment;

[0036] Figure 13 This is a schematic cross-sectional view of a display device according to an embodiment;

[0037] Figures 14 to 17 This is a schematic cross-sectional view illustrating each process in the method of manufacturing a display device according to an embodiment;

[0038] Figure 18 This is a schematic cross-sectional view of a display device according to an embodiment;

[0039] Figure 19 This is a schematic cross-sectional view of a display device according to an embodiment;

[0040] Figures 20 to 25 This is a schematic cross-sectional view illustrating each process in the method of manufacturing a display device according to an embodiment;

[0041] Figure 26 This is a schematic cross-sectional view of a display device according to an embodiment;

[0042] Figures 27 to 30 This is a schematic cross-sectional view illustrating each process in the method of manufacturing a display device according to an embodiment;

[0043] Figure 31 This is a schematic cross-sectional view of a display device according to an embodiment;

[0044] Figure 32 This is a schematic diagram showing an image of the ink formed according to Experimental Example 1;

[0045] Figure 33 This is a schematic diagram showing an image of the ink formed according to Experimental Example 2;

[0046] Figure 34 and Figure 35 This is a schematic diagram showing the image and size of the ink droplets on the sample according to Experimental Example 3, and the surface energy of the embankment surface;

[0047] Figure 36 This is a schematic block diagram of an electronic device according to an embodiment of the present disclosure; and

[0048] Figure 37 This is a schematic diagram of an electronic device according to various embodiments of the present disclosure. Detailed Implementation

[0049] In the following description, numerous specific details are set forth for purposes of explanation in order to provide a thorough understanding of various embodiments or implementations of this disclosure. As used herein, “embodiment” and “implementation” are interchangeable terms as non-limiting examples of the apparatus or methods disclosed herein. However, it will be apparent that various embodiments may be practiced without these specific details or with one or more equivalent arrangements. The various embodiments are not necessarily exclusive nor do they limit this disclosure. For example, particular shapes, configurations, and characteristics of embodiments may be used or implemented in another embodiment.

[0050] Unless otherwise specified, the embodiments shown should be understood as providing features of this disclosure. Therefore, unless otherwise specified, features, components, modules, layers, films, panels, areas and / or aspects of various embodiments (hereinafter individually or collectively referred to as “elements”) may be combined, separated, interchanged and / or rearranged in other ways without departing from the scope of this disclosure.

[0051] In the accompanying drawings, the use of crosshairs and / or shading is generally provided to clarify the boundaries between adjacent elements. Therefore, unless otherwise specified, the presence or absence of crosshairs or shading does not express or indicate any preference or requirement for particular materials, material properties, dimensions, proportions, commonalities between illustrated elements, and / or any other characteristics, properties, or characteristics of the elements. Furthermore, in the drawings, the size and relative size of elements may be exaggerated for clarity and / or descriptive purposes. When embodiments can be implemented differently, a particular sequence of processes may be performed differently than the sequence described. For example, two consecutively described processes may be performed substantially simultaneously, or may be performed in the reverse order of the described process. Moreover, the same reference numerals and / or reference characters denote the same elements.

[0052] When an element or layer is referred to as being "on" another element or layer, "connected to," or "attached to" another element or layer, the element or layer may be directly on, directly connected to, or attached to the other element or layer, or an intermediary element or layer may be present. However, when an element or layer is referred to as being "directly on" another element or layer, "directly connected to," or "directly attached to" another element or layer, an intermediary element or layer is not present. Therefore, the term "connection" can refer to a physical connection, electrical connection, and / or fluid connection with or without an intermediary element. Furthermore, the first-direction axis, the second-direction axis, and the third-direction axis are not limited to the three axes of a Cartesian coordinate system such as the X-axis, Y-axis, and Z-axis, and can be interpreted in a broader sense. For example, the first-direction axis, the second-direction axis, and the third-direction axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purposes of this disclosure, "at least one of A and B" can be interpreted as only A, only B, or any combination of A and B. Furthermore, "at least one of X, Y, and Z" and "at least one of the groups consisting of X, Y, and Z" can be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z. As used herein, the term "and / or" includes any and all combinations of one or more of the relevant listed items.

[0053] Although the terms “first,” “second,” etc., may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Therefore, the first element discussed below may be referred to as the second element without departing from the teachings of this disclosure.

[0054] Spatially relative terms such as “below,” “under,” “below,” “down,” “above,” “above,” “higher,” and “side” (e.g., as in “sidewall”) may be used herein for descriptive purposes and thus to describe the relationship of one element to another(s) as shown in the accompanying drawings. In addition to the orientations depicted in the drawings, spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture. For example, if the device in the drawings is flipped, then an element described as “below” or “under” other elements or features will be oriented “above” other elements or features. Thus, the term “below” can include both above and below orientations. Furthermore, the device may be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and therefore, the spatially relative descriptive terms used herein should be interpreted accordingly.

[0055] The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, the singular forms “a” and “the” are intended to include the plural forms as well, unless the context explicitly indicates otherwise. Furthermore, when used in this specification, the terms “comprising,” “including,” “containing,” and / or “having” indicate the presence of stated features, integrals, steps, operations, elements, components, and / or groups thereof, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components, and / or groups thereof. It should also be noted that, as used herein, the terms “substantially,” “about,” and other similar terms are used as approximate terms rather than terms of degree, and are therefore used to account for the inherent deviations of measured, calculated, and / or provided values ​​that will be recognized by those skilled in the art. For example, “about” may mean within one or more standard deviations of the value, or within ±20%, ±10%, or ±5% of the value.

[0056] Various embodiments are described herein with reference to schematic cross-sectional and / or exploded views that are schematic illustrations of the embodiments and / or intermediate structures. Therefore, variations in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances should be expected. Consequently, the embodiments disclosed herein should not necessarily be construed as limited to specific illustrated shapes of areas, but should include, for example, shape deviations due to manufacturing processes. Thus, the areas shown in the drawings may be schematic in nature, and the shapes of these areas may not reflect the actual shapes of the areas of the device and are therefore not necessarily intended to be limiting.

[0057] As is customary in the art, functional blocks, units, and / or modules are described and some embodiments are illustrated in the accompanying drawings. Those skilled in the art will understand that these blocks, units, and / or modules are physically implemented by electronic (or optical) circuits (e.g., logic circuits, discrete components, microprocessors, hardwired circuits, memory elements, and wiring connections, etc.) that can be formed using semiconductor-based manufacturing techniques or other manufacturing techniques. Where blocks, units, and / or modules are implemented by microprocessors or other similar hardware, these blocks, units, and / or modules can be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and may optionally be driven by firmware and / or software. It is also contemplated that each block, unit, and / or module can be implemented by dedicated hardware, or can be implemented as a combination of dedicated hardware performing some functions and processors performing other functions (e.g., one or more programmed microprocessors and associated circuitry). Furthermore, each block, unit, and / or module of some embodiments may be physically separated into two or more interactive and discrete blocks, units, and / or modules without departing from the scope of this disclosure. Furthermore, blocks, units, and / or modules of some embodiments may be physically combined into more complex blocks, units, and / or modules without departing from the scope of this disclosure.

[0058] Figure 1 This is a schematic plan view of the display device 10 according to an embodiment.

[0059] refer to Figure 1 The display device 10 according to the embodiments can be applied to various electronic devices such as smartphones, mobile phones, tablet PCs, personal digital assistants (PDAs), portable multimedia players (PMPs), televisions, game consoles, watch-type electronic devices, head-mounted displays, PC monitors, laptop computers, car navigation systems, car dashboards, digital cameras, camcorders, outdoor billboards, electronic display panels, medical devices, examination devices, refrigerators, and washing machines. The display device 10 disclosed in this specification can be included among the aforementioned electronic devices, and a television will be described as an example of the display device 10. Televisions can have high or ultra-high resolution such as HD, UHD, 4K, or 8K.

[0060] The display device 10 according to the embodiments can be classified differently depending on the display method. For example, the display device 10 can be classified as an organic light-emitting display device, an inorganic electroluminescent (EL) display device, a quantum dot light-emitting display device (QED), a micron-sized light-emitting diode display device, a nano-sized light-emitting diode display device, a plasma display panel (PDP), a field emission display (FED) device, a cathode ray tube (CRT) display device, a liquid crystal display (LCD) device, or an electrophoretic display (EPD) device. Organic light-emitting display devices and inorganic EL display devices will be described below as examples of display device 10. Unless a special distinction is required, the display device applied to the embodiments will be simply referred to as a display device. However, the embodiments are not limited to organic light-emitting display devices or inorganic EL display devices, and other display devices listed above or known in the art can also be applied within the scope of the shared technical spirit.

[0061] The display device 10 according to the embodiment may have a square shape (e.g., a rectangular shape) in a plan view. In the case that the display device 10 is a television, its long side is located in the horizontal direction. However, the present disclosure is not limited to this, and the long side may also be located in the vertical direction, or the display device 10 may be rotatably mounted such that the long side may be variably located in the horizontal or vertical direction.

[0062] The display device 10 may include a display area DPA and a non-display area NDA. The display area DPA may be an effective area in which an image is displayed. The display area DPA may have a rectangular shape similar to the overall shape of the display device 10 in a plan view, but this disclosure is not limited thereto.

[0063] The display area DPA may include multiple pixels PX. Each pixel PX may include multiple sub-pixels and may be arranged in a matrix. In a planar view, each sub-pixel may have a rectangular or square shape. However, this disclosure is not limited to this, and each sub-pixel may also have a rhombus shape (the rhombus shape having each of its edges inclined relative to the sides of the display device 10). Sub-pixels may emit light of various colors. For example, sub-pixels may include, but are not limited to, sub-pixels emitting red light, sub-pixels emitting green light, and sub-pixels emitting blue light. Sub-pixels may be arranged in a bar or... The shapes are arranged alternately.

[0064] The non-display area NDA may be located around the display area DPA. The non-display area NDA may completely or partially surround the display area DPA. The display area DPA may have a rectangular shape, and the non-display area NDA may be adjacent to the four sides of the display area DPA. The non-display area NDA may form the bezel of the display device 10.

[0065] The driving circuitry or driving element used to drive the display area DPA can be located in the non-display area NDA. The pad unit can be located adjacent to the first long side of the display device 10 (e.g., ...). Figure 1 The first non-display area NDA1, located adjacent to the lower edge of the display device 10, and the second long edge of the display device 10 (e.g., the lower edge of the display device 10) Figure 1 A second non-display area NDA2, located adjacent to the upper edge of the display device 10, is provided on the substrate of the display device 10, and an external device EXD can be mounted on the pad electrodes of the pad unit. Examples of external devices EXD may include a connection film, a printed circuit board, a driver chip DIC, a connector, and a wiring connection film. A scan driver SDR, formed directly on the substrate of the display device 10, can be located adjacent to the first short edge of the display device 10 (e.g., the upper edge of the display device 10). Figure 1 The third non-display area NDA3 is located adjacent to the left side of the display device 10. However, this disclosure is not limited to this, and the scan driver SDR may be located opposite the third non-display area NDA3 and adjacent to the second short side of the display device 10 (e.g., the left side of the display device 10). Figure 1 In the fourth non-display area NDA4, which is located adjacent to the right side of the image.

[0066] Figure 2 This is a schematic layout diagram showing the lines included in the display device 10 according to an embodiment.

[0067] refer to Figure 2 The display device 10 may include multiple lines. These lines may include a scan line SCL, a sensing signal line SSL, a data line DTL, an initialization voltage line VIL, a first voltage line VDL, and a second voltage line VSL. Although not shown in the figures, other lines may be further included in the display device 10.

[0068] The scan line SCL and the sensing signal line SSL can extend along the first direction DR1. The scan line SCL and the sensing signal line SSL can be electrically connected to the scan driver SDR. The scan driver SDR can include driving circuitry. The scan driver SDR can be disposed on one side of the display area DPA along the first direction DR1, but this disclosure is not limited thereto. The scan driver SDR can be electrically connected to the signal connection line CWL, and at least one end of the signal connection line CWL can form a pad WPD_CW in the pad area PDA of the non-display area NDA and can be electrically connected to an external device EXD.

[0069] As used herein, the term "connection" may mean that any component and another component are connected to each other by physical contact or by an intermediary component. It can be understood that any part and another part are connected to each other as a single, integrated component. Furthermore, the connection between any component and another component can be interpreted as including, in addition to a connection by direct contact, an electrical connection by an intermediary component.

[0070] The data line DTL and the initialization voltage line VIL may extend in a second direction DR2 intersecting the first direction DR1. Each of the initialization voltage lines VIL may include a portion extending in the second direction DR2, and may further include a portion branching off from the aforementioned portion in the first direction DR1. Each of the first voltage line VDL and the second voltage line VSL may also include a portion extending in the second direction DR2 and a portion electrically connected to the aforementioned portion and extending in the first direction DR1. The first voltage line VDL and the second voltage line VSL may have a mesh structure, but this disclosure is not limited thereto. Although not shown in the figures, each pixel PX of the display device 10 may be electrically connected to the scan line SCL, the sensing signal line SSL, the initialization voltage line VIL, the first voltage line VDL, the second voltage line VSL, and at least one data line DTL.

[0071] The data line DTL, initialization voltage line VIL, first voltage line VDL, and second voltage line VSL can be electrically connected to one or more wiring pads WPD. Each wiring pad WPD can be located in a pad area PDA. In an embodiment, the wiring pad WPD_DT (hereinafter referred to as the "data pad") of the data line DTL can be located in a pad area PDA on one side of the display area DPA in the second direction DR2, and the wiring pad WPD_Vint (hereinafter referred to as the "initialization voltage pad") of the initialization voltage line VIL, the wiring pad WPD_VDD (hereinafter referred to as the "first power pad") of the first voltage line VDL, and the wiring pad WPD_VSS (hereinafter referred to as the "second power pad") of the second voltage line VSL can be located in a pad area PDA on the other side of the display area DPA in the second direction DR2. For example, the data pad WPD_DT, the initialization voltage pad WPD_Vint, the first power pad WPD_VDD, and the second power pad WPD_VSS can all be located in the same area (e.g., in the non-display area NDA located above the display area DPA). External devices EXD can be mounted on the wiring pads WPD. External devices EXD can be mounted on the wiring pads WPD using anisotropic conductive films or ultrasonic bonding, etc.

[0072] Includes multiple sub-pixels SPX in each pixel PX of the display device 10 (see...) Figure 3 The display device 10 may include pixel driving circuitry. The aforementioned circuitry can transmit driving signals to each pixel driving circuitry while passing through or around each sub-pixel SPX. Pixel driving circuitry may include transistors and capacitors. The number of transistors and capacitors in each pixel driving circuitry can be varied. According to an embodiment, the pixel driving circuitry for each sub-pixel SPX of the display device 10 may have a 3T1C structure comprising three transistors and a storage capacitor. Although the 3T1C structure is used below as an example to describe the pixel driving circuitry, this disclosure is not limited thereto, and various other modified pixel structures such as 2T1C, 7T1C, and 6T1C structures are also applicable.

[0073] Figure 3 This is a schematic diagram of the equivalent circuit of the sub-pixel SPX according to an embodiment.

[0074] refer to Figure 3 In addition to the light-emitting element ED, each sub-pixel SPX of the display device 10 according to the embodiment may also include three transistors DTR, STR1 and STR2 and a storage capacitor CST.

[0075] An LED (Emitting Diode) emits light based on the current supplied through a driving transistor (DTR). LEDs can be implemented as inorganic LEDs, organic LEDs, micron-sized LEDs, or nano-sized LEDs.

[0076] The first electrode (i.e., anode) of the light-emitting element ED can be electrically connected to the source electrode of the driving transistor DTR, and the second electrode (i.e., cathode) of the light-emitting element ED can be electrically connected to the first power line ELVDL (which is connected to the first power line ELVDL). Figure 2 The high potential voltage (or first power supply voltage) corresponding to the first voltage line VDL in the middle is the high potential voltage (or second power supply voltage) and the low potential voltage (or second power supply voltage) corresponding to the second power supply line ELVSL (which is related to the first voltage line VDL). Figure 2 (Corresponding to the second voltage line VSL in the text).

[0077] The driving transistor DTR can adjust the current flowing from the first power line ELVDL, which is supplied with a first power supply voltage, to the light-emitting element ED based on the voltage difference between the gate electrode and the source electrode of the driving transistor DTR. The driving transistor DTR may have a gate electrode connected to the first electrode of the first transistor STR1, a source electrode connected to the first electrode of the light-emitting element ED, and a drain electrode connected to the first power line ELVDL, which is supplied with a first power supply voltage.

[0078] The first transistor STR1 can be turned on by the scan signal of the scan line SCL to connect the data line DTL to the gate electrode of the driving transistor DTR. The first transistor STR1 may have a gate electrode connected to the scan line SCL, a first electrode connected to the gate electrode of the driving transistor DTR, and a second electrode connected to the data line DTL.

[0079] The second transistor STR2 can be turned on by the sensing signal of the sensing signal line SSL to connect the initialization voltage line VIL to the source electrode of the driving transistor DTR. The second transistor STR2 may have a gate electrode connected to the sensing signal line SSL, a first electrode connected to the initialization voltage line VIL, and a second electrode connected to the source electrode of the driving transistor DTR.

[0080] The first electrode of each of the first transistor STR1 and the second transistor STR2 may be the source electrode, and the second electrode of each of the first transistor STR1 and the second transistor STR2 may be the drain electrode. However, this disclosure is not limited thereto, and the situation may also be reversed.

[0081] A storage capacitor CST can be formed between the gate and source electrodes of the driving transistor DTR. The storage capacitor CST can store the difference between the gate voltage and the source voltage of the driving transistor DTR.

[0082] The driving transistor DTR, as well as the first transistor STR1 and the second transistor STR2, can be formed as thin-film transistors. Although in Figure 3 The present disclosure has primarily described the case where the driving transistor DTR, the first transistor STR1, and the second transistor STR2 are N-type metal-oxide-semiconductor field-effect transistors (MOSFETs), but this disclosure is not limited thereto. For example, the driving transistor DTR, the first transistor STR1, and the second transistor STR2 may also be formed as P-type MOSFETs, or some of them may be formed as N-type MOSFETs and the others may be formed as P-type MOSFETs.

[0083] Figure 4 This is a schematic cross-sectional view of the display device 10 according to an embodiment.

[0084] refer to Figure 4 The display device 10 according to the embodiment may include a substrate SUB, a light-emitting element layer EML, a thin film encapsulation layer TFEL, a fill layer FIL, a wavelength conversion layer WCL, a color filter layer CFL, and a substrate TSUB.

[0085] The substrate SUB can be an insulating substrate. The substrate SUB can include a transparent material. For example, the substrate SUB can include a transparent insulating material such as glass or quartz. The substrate SUB can be a rigid substrate. However, this disclosure is not limited thereto, and the substrate SUB can also include a plastic such as polyimide, or can have flexible properties such that it can be bent, folded, rolled up.

[0086] The light-emitting element layer (EML) can be disposed on the substrate (SUB). The EML can include light-emitting elements (EDs) located in each sub-pixel (SPX) and multiple switching elements. The switching elements can drive the light-emitting elements (EDs) to emit light.

[0087] A thin-film encapsulation layer (TFEL) can be disposed on the light-emitting element layer (EML). The TFEL may include an organic layer disposed between multiple inorganic layers to protect the EML from external moisture and oxygen.

[0088] The filler layer (FIL) can be disposed on the thin-film encapsulation layer (TFEL). The filler layer (FIL) can fill the space between the substrate (SUB) and the counter substrate (TSUB), and can improve optical efficiency by reflecting (or totally reflecting) the light emitted from the wavelength conversion layer (WCL) at the interface with the wavelength conversion layer (WCL).

[0089] The wavelength conversion layer (WCL) can be placed on the filler layer (FIL). The WCL can convert the wavelength of light emitted from the light-emitting element layer (EML) to output red, green, and blue light.

[0090] A color filter layer (CFL) can be placed on the wavelength conversion layer (WCL). The CFL can filter light incident from the outside to reduce the reflection of external light and can improve the color characteristics of light emitted through the wavelength conversion layer (WCL).

[0091] The substrate TSUB can be disposed on the color filter layer CFL. The substrate TSUB can encapsulate the light-emitting element layer EML together with the substrate SUB. The substrate TSUB can include transparent materials. For example, the substrate TSUB can include transparent insulating materials such as glass or quartz.

[0092] Figure 5 This is a schematic cross-sectional view of the display device 10 according to an embodiment.

[0093] Combination Figure 4 refer to Figure 5The light-emitting element layer (EML) can be disposed on the substrate (SUB). The light-emitting element layer (EML) may include a buffer layer 120, a bottom metal layer (BML), a first insulating layer 130, a semiconductor layer (ACT), a gate electrode (GE), a gate insulating layer 140, a second insulating layer 150, a source electrode (SE), a drain electrode (DE), a third insulating layer 155, a fourth insulating layer 160, a light-emitting element (ED), and a pixel defining layer 170.

[0094] A buffer layer 120 may be disposed on a substrate SUB. The buffer layer 120 can be used to prevent foreign matter, moisture, or oxygen introduced through the substrate SUB from entering the components disposed on the buffer layer 120. The buffer layer 120 may include materials such as SiO2 and SiN. x or SiO x N y Inorganic materials can be formed in single or multiple layers, but this disclosure is not limited thereto.

[0095] A bottom metal layer (BML) can be disposed on the buffer layer 120. The bottom metal layer (BML) can block external light or light emitted from the light-emitting element (ED), which will be described later, from entering the semiconductor layer (ACT). Accordingly, leakage current generated by light in the thin-film transistor, which will be described later, can be prevented or the generation of leakage current can be reduced.

[0096] The bottom metal layer (BML) can be made of a light-blocking and conductive material. In some embodiments, the bottom metal layer (BML) may comprise a single material selected from metals such as silver (Ag), nickel (Ni), gold (Au), platinum (Pt), aluminum (Al), copper (Cu), molybdenum (Mo), titanium (Ti), and neodymium (Nd), or may comprise an alloy of these metals. In some embodiments, the bottom metal layer (BML) may have a single-layer structure or a multi-layer structure. For example, when the bottom metal layer (BML) has a multi-layer structure, each of the bottom metal layers (BML) may be, but is not limited to, a stacked structure of titanium (Ti) / copper (Cu) / indium tin oxide (ITO) or a stacked structure of titanium (Ti) / copper (Cu) / aluminum oxide (Al2O3).

[0097] In some embodiments, the bottom metal layer BML may correspond to the semiconductor layer ACT and may overlap with the semiconductor layer ACT on the third-direction DR3 respectively. In some embodiments, the bottom metal layer BML may be wider than the semiconductor layer ACT.

[0098] In some embodiments, the bottom metal layer BML can be a data line, a power line, and a thin-film transistor (not shown in the figures) electrically connected to the thin-film transistor shown in the figures (which includes...). Figure 5It is part of the circuitry consisting of the gate electrode GE, semiconductor layer ACT, drain electrode DE, and source electrode SE. In some embodiments, the bottom metal layer BML may be made of a material with a resistance lower than that of the source electrode SE and the drain electrode DE.

[0099] The first insulating layer 130 can be disposed on the bottom metal layer BML and the buffer layer 120. The first insulating layer 130 can electrically insulate the bottom metal layer BML from the semiconductor layer ACT. The first insulating layer 130 can cover the bottom metal layer BML.

[0100] The first insulating layer 130 may include, but is not limited to, materials such as SiO2 and SiN. x SiO x N y Inorganic materials such as Al2O3, TiO2, Ta2O, HfO2, or ZrO2.

[0101] A semiconductor layer ACT can be disposed on the first insulating layer 130. The semiconductor layer ACT can correspond to the first light-emitting region ELA1, the second light-emitting region ELA2, and the third light-emitting region ELA3 in the display region DPA, respectively. The semiconductor layer ACT can overlap with the bottom metal layer BML on the third-direction DR3, respectively. Accordingly, the generation of photocurrent in the semiconductor layer ACT can be suppressed.

[0102] The semiconductor layer ACT may include an oxide semiconductor. In some embodiments, each of the semiconductor layers ACT may be made of a zinc oxide-based material such as zinc oxide, indium zinc oxide, or gallium indium zinc oxide, or may be an In-Ga-Zn-O (IGZO) semiconductor containing metals such as indium (In) and gallium (Ga) in ZnO. However, this disclosure is not limited thereto. For example, the semiconductor layer ACT may also include amorphous silicon or polycrystalline silicon.

[0103] The gate electrode GE can be disposed on the semiconductor layer ACT. The gate electrode GE can overlap with the semiconductor layer ACT in the display area DPA. In some embodiments, the gate electrode GE can be narrower than the semiconductor layer ACT, but this disclosure is not limited thereto.

[0104] Considering the adhesion to adjacent layers, the surface flatness of the layers stacked thereon, and the processability, each of the gate electrodes GE may include one or more of aluminum (Al), platinum (Pt), palladium (Pd), silver (Ag), magnesium (Mg), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and copper (Cu) and may be formed as a single layer or multiple layers, but this disclosure is not limited thereto.

[0105] A gate insulating layer 140 may be disposed between the semiconductor layer ACT and the gate electrode GE. The gate insulating layer 140 may insulate the semiconductor layer ACT from the gate electrode GE. In some embodiments, the gate insulating layer 140 may have a partially patterned shape, rather than being formed as a layer covering one side of the substrate SUB (i.e., the first substrate) on the third-direction DR3. The gate insulating layer 140 may be narrower than the semiconductor layer ACT and wider than the gate electrode GE, but this disclosure is not limited thereto.

[0106] The gate insulating layer 140 may include an inorganic material. For example, the gate insulating layer 140 may include the inorganic material illustrated in the description of the first insulating layer 130.

[0107] The second insulating layer 150 may be disposed on the first insulating layer 130 and the gate insulating layer 140 to cover the semiconductor layer ACT and the gate electrode GE. In some embodiments, the second insulating layer 150 may be used as a planarization layer to provide a flat surface.

[0108] The second insulating layer 150 may include organic materials. In some embodiments, the second insulating layer 150 may include, but is not limited to, at least any one of acrylic acid (PAC), polystyrene, polymethyl methacrylate (PMMA), polyacrylonitrile (PAN), polyamide, polyimide, polyaryl ether, heterocyclic polymer, parylene, fluoropolymer, epoxy resin, benzocyclobutene series resin, siloxane series resin, and silane resin.

[0109] In some embodiments, the second insulating layer 150 may include an inorganic material. For example, the second insulating layer 150 may include the inorganic material illustrated in the description of the first insulating layer 130.

[0110] The source electrode SE and drain electrode DE can be spaced apart from each other on the second insulating layer 150. The source electrode SE and drain electrode DE can be electrically connected to the semiconductor layer ACT through contact holes passing through the second insulating layer 150, respectively. The source electrode SE can be further electrically connected to the bottom metal layer BML through contact holes passing through the first insulating layer 130 and the second insulating layer 150. When the bottom metal layer BML is part of a line for transmitting signals or voltages, the source electrode SE can be electrically connected and coupled to the bottom metal layer BML to receive signals or voltages supplied to that line.

[0111] Each of the source electrode SE and the drain electrode DE may include aluminum (Al), copper (Cu), or titanium (Ti), and may be formed as a multilayer or a single layer. In some embodiments, the source electrode SE and the drain electrode DE may have a multilayer structure, but not limited to Ti / Al / Ti.

[0112] The aforementioned semiconductor layer ACT, gate electrode GE, source electrode SE, and drain electrode DE can form a thin-film transistor (TFT) that is a switching element. In some embodiments, the TFT can be located in a first light-emitting region ELA1, a second light-emitting region ELA2, and a third light-emitting region ELA3, respectively. In some embodiments, a portion of each of the TFTs can be located in a non-light-emitting region NELA.

[0113] A third insulating layer 155 may be disposed on the second insulating layer 150 to cover the thin-film transistor. In some embodiments, the third insulating layer 155 may be a passivation layer.

[0114] In some embodiments, the third insulating layer 155 may include an inorganic material. For example, the third insulating layer 155 may include the inorganic material illustrated in the description of the first insulating layer 130.

[0115] A fourth insulating layer 160 may be disposed on the third insulating layer 155 to cover the third insulating layer 155. In some embodiments, the fourth insulating layer 160 may be a planarization layer.

[0116] The fourth insulating layer 160 may be made of an organic material. In some embodiments, the fourth insulating layer 160 may include an acrylic resin, an epoxy resin, an imide resin, or an ester resin, or may include a photosensitive organic material, but this disclosure is not limited thereto.

[0117] The anode ANO can be disposed on the fourth insulating layer 160 in the display area DPA.

[0118] The anode ANO can overlap with the first light-emitting region ELA1, the second light-emitting region ELA2, and the third light-emitting region ELA3 respectively on the third-direction DR3, and at least a portion of each of the anodes ANO can extend into the non-light-emitting region NELA. The anode ANO can be electrically connected to the drain electrode DE of the thin-film transistor.

[0119] In some embodiments, the anode ANO can be a reflective electrode. For example, each of the anode ANOs can be a metal layer comprising a metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, or Cr. In embodiments, each of the anode ANOs can further comprise a metal oxide layer stacked on the metal layer. The anode ANO can have a multilayer structure (e.g., a two-layer structure of ITO / Ag, Ag / ITO, ITO / Mg, or ITO / MgF2, or a three-layer structure of ITO / Ag / ITO).

[0120] The pixel defining layer 170 can be disposed on the anode ANO and the fourth insulating layer 160. The pixel defining layer 170 can define the first light-emitting region ELA1, the second light-emitting region ELA2, and the third light-emitting region ELA3 as openings exposing the anode ANO.

[0121] The pixel-limiting layer 170 may overlap with the light-blocking region BA of the color filter layer CFL, which will be described later, on the third-direction DR3. The pixel-limiting layer 170 may overlap with the embankment BK, which will be described later, on the third-direction DR3.

[0122] The pixel-defining layer 170 may include, but is not limited to, organic insulating materials such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, or benzocyclobutene (BCB).

[0123] The light-emitting layer OL can be disposed on the anode ANO and the pixel defining layer 170. In some embodiments, the light-emitting layer OL can be in the shape of a continuous layer formed over the light-emitting regions ELA1 to ELA3 and the non-light-emitting regions NEA. In some embodiments, the light-emitting layer OL can be disposed only in the display region DPA. However, this disclosure is not limited thereto. For example, a portion of the light-emitting layer OL can be further located in the non-display region NDA.

[0124] In some embodiments, the light-emitting layer OL may include an organic layer comprising organic materials. The organic layer may include an organic light-emitting layer, and in some cases, the organic layer may further include a hole injection / transport layer and / or an electron injection / transport layer as an auxiliary layer for assisting light emission. In some embodiments, the light-emitting layer OL may have a tandem structure. The tandem structure may include a plurality of organic light-emitting layers stacked in the thickness direction (e.g., third-direction DR3) and a charge-generating layer disposed between the organic light-emitting layers. The tandem structure may include a plurality of blue organic light-emitting layers and a plurality of green organic light-emitting layers stacked in the thickness direction. However, this disclosure is not limited thereto.

[0125] In some embodiments, when the display device 10 is a micron-sized light-emitting diode display device or a nano-sized light-emitting diode display device, the light-emitting layer OL may include an inorganic material such as an inorganic semiconductor.

[0126] The cathode CE can be disposed on the light-emitting layer OL. In some embodiments, the cathode CE can be disposed on the light-emitting layer OL and can be in the shape of a continuous layer extending over the light-emitting regions ELA1 to ELA3 and the non-light-emitting regions NELA. For example, the cathode CE can cover (or completely cover) the light-emitting layer OL.

[0127] The cathode (CE) can be translucent or transparent. The thickness of the cathode CE ranges from tens to hundreds of angstroms. In some cases, the cathode CE can be translucent. In some embodiments, when the cathode CE is translucent, it may comprise Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, Mo, Ti, or compounds or mixtures thereof (e.g., LiF or a mixture of Ag and Mg) or a material having a multilayer structure such as LiF / Ca or LiF / Al. The cathode CE can also be transparent by comprising a transparent conductive oxide. In some embodiments, when the cathode CE is transparent, it may comprise tungsten oxide (W... x O x Titanium oxide (TiO2), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), or magnesium oxide (MgO).

[0128] An anode (ANO), an emissive layer (OL), and a cathode (CE) can form a light-emitting element (ED). For example, an anode (ANO), an emissive layer (OL), and a cathode (CE) overlapping a first light-emitting region (ELA1) can form a first light-emitting element; an anode (ANO), an emissive layer (OL), and a cathode (CE) overlapping a second light-emitting region (ELA2) can form a second light-emitting element; and an anode (ANO), an emissive layer (OL), and a cathode (CE) overlapping a third light-emitting region (ELA3) can form a third light-emitting element. Each of the first, second, and third light-emitting elements can emit output light (LE). The output light (LE) emitted from each light-emitting element (ED) can have a peak wavelength of 440 nm to 480 nm. For example, the output light (LE) can be blue light. In some embodiments, in addition to blue light, the output light (LE) can further include green light.

[0129] The thin-film encapsulation layer TFEL can be disposed on the light-emitting element layer EML. The thin-film encapsulation layer TFEL can also be disposed on the cathode CE. The thin-film encapsulation layer TFEL protects the component located beneath it from external foreign matter, moisture, or oxygen. The thin-film encapsulation layer TFEL is typically located within the first light-emitting region ELA1, the second light-emitting region ELA2, the third light-emitting region ELA3, and the non-light-emitting region NELA.

[0130] The thin-film encapsulation layer TFEL may include a first encapsulation layer TFE1, a second encapsulation layer TFE2, and a third encapsulation layer TFE3, which are sequentially stacked on the cathode CE.

[0131] The first encapsulation layer TFE1 can cover (or completely cover) the cathode CE in the display area DPA to cover the first light-emitting element, the second light-emitting element, and the third light-emitting element. The second encapsulation layer TFE2 can be disposed on the first encapsulation layer TFE1 to cover the first light-emitting element, the second light-emitting element, and the third light-emitting element. The third encapsulation layer TFE3 can be disposed on the second encapsulation layer TFE2 to cover (or completely cover) the second encapsulation layer TFE2.

[0132] In some embodiments, each of the first encapsulation layer TFE1 and the third encapsulation layer TFE3 may include an inorganic material. For example, each of the first encapsulation layer TFE1 and the third encapsulation layer TFE3 may be made of, but is not limited to, silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, and silicon oxynitride (SiO2). x N y It is made of lithium or lithium fluoride.

[0133] In some embodiments, the second encapsulation layer TFE2 may include organic materials, for example, the second encapsulation layer TFE2 may be made of, but not limited to, acrylic resin, methacrylic resin, polyisoprene resin, vinyl resin, epoxy resin, urethane resin, cellulose resin or perylene resin.

[0134] The substrate TSUB can be disposed on a substrate SUB on which the light-emitting element layer EML and the thin-film encapsulation layer TFEL are positioned. The color filter layer CFL, the low refractive index layer LR, the first capping layer CPL1, and the wavelength conversion layer WCL can be sequentially disposed on the surface of the substrate TSUB.

[0135] The color filter layer CFL can be disposed on the opposite side of the substrate TSUB in the third direction DR3. For example, the color filter layer CFL can be disposed between the substrate TSUB and the substrate SUB. The color filter layer CFL may include a light-filtering pattern portion and a light-blocking pattern portion BM. The light-blocking pattern portion BM may surround the light-filtering pattern portion. The light-filtering pattern portion of the color filter layer CFL may define light-transmitting regions TA1 to TA3, and the light-blocking pattern portion BM may define a light-blocking region BA.

[0136] like Figure 5As shown, the color filter layer CFL may include a first color filter 321, a second color filter 322, and a third color filter 323. The first color filter 321 absorbs all of the second light (or light of the second color) and the third light (or light of the third color) except for the first light (or light of the first color). The second color filter 322 absorbs all of the first light and the third light except for the second light, and the third color filter 323 absorbs all of the first light and the second light except for the third light. For example, the first color filter 321 may transmit the first light, the second color filter 322 may transmit the second light, and the third color filter 323 may transmit the third light.

[0137] In some embodiments, the first color filter 321 may be a blue color filter and may include a blue colorant. As used herein, the term "colorant" is a concept that includes both dyes and pigments. The first color filter 321 may include a base resin, and the blue colorant may be dispersed in the base resin. In some embodiments, the second color filter 322 may be a green color filter and may include a green colorant. The second color filter 322 may include a base resin, and the green colorant may be dispersed in the base resin. In some embodiments, the third color filter 323 may be a red color filter and may include a red colorant. The third color filter 323 may include a base resin, and the red colorant may be dispersed in the base resin.

[0138] The first color filter 321 may include a first light-filtering pattern portion 321a and a first light-blocking pattern portion 321b surrounding the first light-filtering pattern portion 321a. The second color filter 322 may include a second light-filtering pattern portion 322a and a second light-blocking pattern portion 322b surrounding the second light-filtering pattern portion 322a. The third color filter 323 may include a third light-filtering pattern portion 323a and a third light-blocking pattern portion 323b surrounding the third light-filtering pattern portion 323a.

[0139] For example, the first filtering pattern portion 321a of the first color filter 321 overlaps with the first light-transmitting region TA1. The first light-blocking pattern portion 321b of the first color filter 321 surrounds the first filtering pattern portion 321a that overlaps with the first light-transmitting region TA1, but may not overlap with the second light-transmitting regions TA2 and TA3, and may overlap with the light-blocking region BA. The second filtering pattern portion 322a of the second color filter 322 overlaps with the second light-transmitting region TA2. The second light-blocking pattern portion 322b of the second color filter 322 surrounds the second filtering pattern portion 322a that overlaps with the second light-transmitting region TA2, but may not overlap with the first light-transmitting region TA1 and TA3, and may overlap with the light-blocking region BA. The third filtering pattern portion 323a of the third color filter 323 overlaps with the third light-transmitting region TA3. The third light-blocking pattern portion 323b of the third color filter 323 surrounds the third light-filtering pattern portion 323a that overlaps with the third light-transmitting region TA3, but may not overlap with the first light-transmitting region TA1 and the second light-transmitting region TA2 and may overlap with the light-blocking region BA. For example, the light-filtering pattern portion of the color filter layer CFL may include the first light-filtering pattern portion 321a of the first color filter 321, the second light-filtering pattern portion 322a of the second color filter 322, and the third light-filtering pattern portion 323a of the third color filter 323, and the light-blocking pattern portion BM may have a structure in which the first light-blocking pattern portion 321b of the first color filter 321, the second light-blocking pattern portion 322b of the second color filter 322, and the third light-blocking pattern portion 323b of the third color filter 323 are stacked.

[0140] The first filter pattern portion 321a of the first color filter 321 can be used as a blocking filter to block red and green light. For example, the first filter pattern portion 321a can selectively transmit first light (e.g., blue light) and can block or absorb second light (e.g., green light) and third light (e.g., red light).

[0141] The second filter pattern portion 322a of the second color filter 322 can be used as a blocking filter to block blue and red light. For example, the second filter pattern portion 322a can selectively transmit a second light (e.g., green light) and can block or absorb a first light (e.g., blue light) and a third light (e.g., red light).

[0142] The third filter pattern portion 323a of the third color filter 323 can be used as a blocking filter to block blue and green light. For example, the third filter pattern portion 323a can selectively transmit a third light (e.g., red light) and can block or absorb a first light (e.g., blue light) and a second light (e.g., green light).

[0143] In some embodiments, the light-blocking pattern portion BM may have a structure in which the first light-blocking pattern portion 321b, the third light-blocking pattern portion 323b, and the second light-blocking pattern portion 322b are sequentially stacked from the surface of the substrate TSUB. However, this disclosure is not limited thereto. In some embodiments, the light-blocking pattern portion BM may have a structure in which the first light-blocking pattern portion 321b, the second light-blocking pattern portion 322b, and the third light-blocking pattern portion 323b are sequentially stacked from the surface of the substrate TSUB. In another embodiment, the light-blocking pattern portion BM may not consist of the aforementioned color filters 321, 322, and 323, but may be formed from a single organic light-blocking material. For example, the light-blocking pattern portion BM may be formed by coating and exposing an organic light-blocking material. For ease of description, the case where the light-blocking pattern portion BM has a structure in which the first light-blocking pattern portion 321b, the third light-blocking pattern portion 323b, and the second light-blocking pattern portion 322b are sequentially stacked on a third-direction DR3 will be primarily described. The light-blocking pattern portion BM configured as described above can absorb all of the first light, the second light, and the third light.

[0144] The low-refractive-index layer LR can be disposed on the surface of the color filter layer CFL on the opposite side of the third-direction DR3. For example, the low-refractive-index layer LR can be disposed between the color filter layer CFL and the substrate SUB. The low-refractive-index layer LR has a lower refractive index than the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2, which will be described later. Therefore, the low-refractive-index layer LR can cause total internal reflection of light propagating from the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2 to the low-refractive-index layer LR, thereby reusing the light.

[0145] The low-refractive-index layer LR may comprise organic or inorganic materials. In some embodiments, the refractive index of the low-refractive-index layer LR may be less than 1.3. When the refractive index of the low-refractive-index layer LR is less than approximately 1.3, the difference in refractive index between the low-refractive-index layer LR and the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2 is sufficiently large to cause total internal reflection.

[0146] The first capping layer CPL1 can be disposed on the surface of the low-refractive layer LR to cover the low-refractive layer LR. The first capping layer CPL1 can prevent damage or contamination to the low-refractive layer LR and the color filter layer CFL by preventing impurities such as moisture or air from penetrating from the outside into the low-refractive layer LR or the color filter layer CFL.

[0147] The first capping layer CPL1 may include an inorganic material. In some embodiments, the first capping layer CPL1 may include materials such as SiO2 and SiN. x or SiO x Ny Inorganic materials can be formed in single or multiple layers, but this disclosure is not limited thereto.

[0148] The wavelength conversion layer WCL can be disposed on the surface of the first capping layer CPL1. The wavelength conversion layer WCL may include a dam BK, a first light-transmitting member TPL, a second light-transmitting member WCL1, a third light-transmitting member WCL2, an organic layer OML, and a second capping layer CPL2.

[0149] based on Figure 5 The dam BK can be disposed on the surface of the first capping layer CPL1 on the other side of the third-direction DR3 (e.g., between the first capping layer CPL1 and the substrate SUB), and can be positioned in a grid shape to form a space for accommodating light-transmitting members TPL, WCL1, and WCL2. For example, the dam BK can be used to define a space in which light-transmitting members TPL, WCL1, and WCL2 are positioned. The dam BK can contact (or directly contact) the surface of the first capping layer CPL1 on the other side of the third-direction DR3. In a plan view, the dam BK can surround the light-transmitting members TPL, WCL1, and WCL2. The dam BK can overlap with the non-light-emitting region NELA and the light-blocking region BA. The dam BK can not overlap with the light-emitting regions ELA1, ELA2, and ELA3 and the light-transmitting regions TA1, TA2, and TA3.

[0150] In some embodiments, the dam BK may include, but is not limited to, photocurable organic materials (e.g., photocurable organic materials including light-blocking materials). In some embodiments, the dam BK may not be hydrophobic and may be, for example, non-hydrophobic.

[0151] The first light-transmitting component TPL can overlap with the first light-transmitting region TA1, the second light-transmitting component WCL1 can overlap with the second light-transmitting region TA2, and the third light-transmitting component WCL2 can overlap with the third light-transmitting region TA3. The first light-transmitting component TPL, the second light-transmitting component WCL1, and the third light-transmitting component WCL2 can be referred to as wavelength conversion layers or wavelength conversion material layers.

[0152] The first light-transmitting member TPL may be located in the space defined by the embankment BK, and may overlap with the first light-emitting region ELA1 and the first light-transmitting region TA1 on the third-direction DR3. The first light-transmitting member TPL may contact (or directly contact) the first capping layer CPL1 and the embankment BK.

[0153] The first light-transmitting member TPL can be a light-transmitting pattern that transmits incident light. The first light-transmitting member TPL can transmit light of the first color emitted from the light-emitting element layer EML as is. For example, the output light LE provided by the first light-emitting element can be blue light as described above, and can pass through the first light-transmitting member TPL and the first filter pattern portion 321a of the first color filter 321 to exit the display device 10. For example, the first output light L1 emitted from the first light-emitting area ELA1 through the first light-transmitting area TA1 to the outside can be blue light.

[0154] The first light-transmitting component TPL may include a base resin 330 and a light scatterer 331.

[0155] The base resin 330 may be made of an organic material with high light transmittance. In some embodiments, the base resin 330 may be an organic material including, but not limited to, epoxy resin, acrylic resin, carbole resin, or imide resin.

[0156] The light scatterer 331 may have a refractive index different from that of the base resin 330 and may form an optical interface with the base resin 330. The light scatterer 331 may be a light scattering particle. The light scatterer 331 may scatter incident light in random directions regardless of the incident direction of the light without substantially changing the wavelength of the incident light passing through the first light-transmitting region TA1.

[0157] The light scatterer 331 may be a material that scatters at least a portion of the transmitted light, and may comprise metal oxide particles or organic particles. In some embodiments, the light scatterer 331 may comprise titanium oxide (TiO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), indium oxide (In2O3), zinc oxide (ZnO), or tin oxide (SnO2) as metal oxides, or may comprise acrylic resin or urethane resin as organic particles, but this disclosure is not limited thereto.

[0158] The second light-transmitting member WCL1 may be located in the space defined by the embankment BK, and may overlap with the second light-emitting region ELA2 and the second light-transmitting region TA2 on the third-direction DR3. The second light-transmitting member WCL1 may contact (or directly contact) the first capping layer CPL1 and the embankment BK.

[0159] The second light-transmitting member WCL1 can be a wavelength conversion pattern that converts or transforms the peak wavelength of the incident light to another specific peak wavelength and outputs light with a specific peak wavelength. The second light-transmitting member WCL1 can convert light of a first color emitted from the light-emitting element layer EML into light of a second color and can output light of the second color. For example, the output light LE provided by the second light-emitting element can be blue light as described above, and when it passes through the second light-transmitting member WCL1 and the second filter pattern portion 322a of the second color filter 322, the output light LE provided by the second light-emitting element can be converted into green light with a peak wavelength in the range of approximately 510 nm to approximately 550 nm. Accordingly, the green light can be emitted to the outside of the display device 10. For example, the second output light L2 emitted to the outside from the second light-emitting region ELA2 through the second light-transmitting region TA2 can be green light.

[0160] The second light-transmitting component WCL1 may include a base resin 330, a light scatterer 331 dispersed in the base resin 330, and a first wavelength converter 332 dispersed in the base resin 330.

[0161] The first wavelength converter 332 can convert or transform the peak wavelength of the incident light to another specific peak wavelength. The first wavelength converter 332 can convert the output light LE of blue light provided by the second light-emitting element into green light with a single peak wavelength in the range of about 510 nm to about 550 nm, and can output green light.

[0162] In some embodiments, the first wavelength converter 332 may be, but is not limited to, a quantum dot, a quantum rod, or a phosphor. For ease of description, the following will primarily describe the case where the first wavelength converter 332 is a quantum dot. A quantum dot can be a particulate material that emits light of a specific color when an electron transitions from the conduction band to the valence band. A quantum dot can be a semiconductor nanocrystal material. A quantum dot can have a specific band gap depending on its composition and size. Therefore, a quantum dot can absorb light and then can emit light with a unique wavelength.

[0163] Quantum dots can include group III-VI semiconductor compounds, group II-VI semiconductor compounds, group III-V semiconductor compounds, group II-III-V semiconductor compounds, group I-III-VI semiconductor compounds, group IV-VI semiconductor compounds, group IV elements or compounds, or any combination thereof.

[0164] Examples of group II-VI semiconductor compounds include binary compounds (e.g., CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, or MgS) and ternary compounds (e.g., CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZn). Se, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe or MgZnS), quaternary compounds (e.g., CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe or HgZnSTe), and any combination thereof.

[0165] Examples of group III-V semiconductor compounds may include binary compounds (e.g., GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, or InSb), ternary compounds (e.g., GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, or InPSb), quaternary compounds (e.g., GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb), and any combination thereof. Group III-V semiconductor compounds may further include group II elements. Examples of III-V semiconductor compounds that further include group II elements may include InZnP, InGaZnP, and InAlZnP.

[0166] Examples of III-VI semiconductor compounds may include binary compounds (e.g., GaS, Ga2S3, GaSe, Ga2Se3, GaTe, InS, InSe, In2Se3, or InTe), ternary compounds (e.g., InGaS3 or InGaSe3), and any combination thereof.

[0167] Examples of group I-III-VI semiconductor compounds may include ternary compounds (e.g., AgInS, AgInS2, AgInSe2, AgGaS, AgGaS2, AgGaSe2, CuInS, CuInS2, CuInSe2, CuGaS2, CuGaSe2, CuGaO2, AgGaO2, or AgAlO2), quaternary compounds (e.g., AgInGaS2 or AgInGaSe2), and any combination thereof.

[0168] Examples of IV-VI semiconductor compounds may include binary compounds (e.g., SnS, SnSe, SnTe, PbS, PbSe, or PbTe), ternary compounds (e.g., SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, or SnPbTe), quaternary compounds (e.g., SnPbSSe, SnPbSTe, or SnPbSTe), and any combination thereof.

[0169] Group IV elements or compounds may include elements (e.g., Si or Ge), binary compounds (e.g., SiC or SiGe), or any combination thereof.

[0170] Each element included in a multi-component compound, such as a binary, ternary, or quaternary compound, can exist in the particles at a uniform or non-uniform concentration. For example, each of the above chemical formulas represents the type of element included in the compound, and the ratio of elements in the compound can vary. For example, AgInGaS2 can represent AgIn. x Ga 1- x S2 (where x is a real number between 0 and 1).

[0171] Quantum dots can have a single structure or a core-shell dual structure comprising a uniform concentration of each element contained in the quantum dot. For example, the materials contained in the core and the materials contained in the shell can be different from each other.

[0172] Each quantum dot's shell can serve as a protective layer to maintain semiconductor properties by preventing chemical modification of the core and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell can be single-layered or multi-layered. The interface between the core and the shell can have a concentration gradient in which the concentration of elements present in the shell decreases towards the center.

[0173] The shell of each quantum dot may comprise, for example, a metal or non-metal oxide, a semiconductor compound, or a combination thereof. Examples of metal or non-metal oxides may include binary compounds such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, or NiO; ternary compounds such as MgAl2O4, CoFe2O4, NiFe2O4, or CoMn2O4; and any combination thereof. Examples of semiconductor compounds may include group III-VI, group II-VI, group III-V, group II-III-V, group I-III-VI, group IV-VI semiconductor compounds, and any combination thereof, as described herein. For example, semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaS, GaSe, AgGaS, AgGaS2, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, or any combination thereof.

[0174] Each element included in a multi-component compound, such as a binary or ternary compound, may exist in the particles in a uniform or non-uniform concentration. For example, each of the above chemical formulas may represent the type of element included in the compound, and the element ratios in the compound may vary.

[0175] Quantum dots can have a full width at half maximum (FWHM) of emission wavelengths below approximately 45 nm (e.g., below approximately 40 nm, more specifically below approximately 30 nm). Within this range, color purity or color reproducibility can be improved. Since light emitted through quantum dots is radiated in all directions, the viewing angle of light can be improved.

[0176] Quantum dots can take the form of spherical, conical, multi-armed, or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplates, etc.

[0177] Since the band gap can be controlled by adjusting the size of the quantum dots or the element ratios in the quantum dot compound, light of various wavelengths can be obtained from the quantum dot emitting layer. Therefore, the aforementioned quantum dots (quantum dots with different sizes or different element ratios in the quantum dot compound) can be used to realize light-emitting elements that emit light of various wavelengths. For example, the size of the quantum dots or the element ratios in the quantum dot compound can be adjusted to emit red, green, and / or blue light. Quantum dots can also emit white light by combining various colors of light.

[0178] A portion of the output light LE provided by the second light-emitting element can pass through the second light-transmitting member WCL1 without being converted into green light by the first wavelength converter 332. In the output light LE, the component of the output light LE that is incident on the second filter pattern portion 322a of the second color filter 322 without being wavelength-converted by the second light-transmitting member WCL1 can be blocked by the second filter pattern portion 322a. On the other hand, the green light LE that has been converted by the second light-transmitting member WCL1 passes through the second filter pattern portion 322a and is then emitted to the outside. For example, the second output light L2 emitted to the outside of the display device 10 through the second light-transmitting region TA2 can be green light.

[0179] The third light-transmitting member WCL2 may be located in the space defined by the embankment BK, and may overlap with the third light-emitting region ELA3 and the third light-transmitting region TA3 on the third-direction DR3. The third light-transmitting member WCL2 may contact (or directly contact) the first capping layer CPL1 and the embankment BK.

[0180] The third light-transmitting member WCL2 can be a wavelength conversion pattern that converts or transforms the peak wavelength of the incident light into another specific peak wavelength and outputs light with a specific peak wavelength. For example, the output light LE provided by the third light-emitting element can be blue light as described above, and when it passes through the third light-transmitting member WCL2 and the third filter pattern portion 323a of the third color filter 323, the output light LE provided by the third light-emitting element can be converted into red light with a peak wavelength in the range of approximately 610 nm to approximately 650 nm. Accordingly, the red light can be emitted to the outside of the display device 10. For example, the third output light L3 emitted to the outside from the third light-emitting region ELA3 through the third light-transmitting region TA3 can be red light.

[0181] The third light-transmitting component WCL2 may include a base resin 330, a light scatterer 331 dispersed in the base resin 330, and a second wavelength converter 333 dispersed in the base resin 330.

[0182] The second wavelength converter 333 can convert or transform the peak wavelength of the incident light to another specific peak wavelength. The second wavelength converter 333 can convert the output blue light LE provided by the third light-emitting element into red light having a single peak wavelength in the range of approximately 610 to approximately 650 nm, and can output red light. In some embodiments, the second wavelength converter 333 can be, but is not limited to, a quantum dot, a quantum rod, or a phosphor. In the case where the second wavelength converter 333 is a quantum dot, it can have substantially the same composition as the first wavelength converter 332 described above in the case where the first wavelength converter 332 is a quantum dot. Therefore, the description of the second wavelength converter 333 will be omitted.

[0183] A portion of the output light LE provided by the third light-emitting element can pass through the third light-transmitting member WCL2 without being converted into red light by the second wavelength converter 333. In the output light LE, the component of the output light LE that is incident on the third filter pattern portion 323a of the third color filter 323 without being wavelength-converted by the third light-transmitting member WCL2 can be blocked by the third filter pattern portion 323a. On the other hand, the red light LE that has been converted by the third light-transmitting member WCL2 passes through the third filter pattern portion 323a and is then emitted to the outside. For example, the third output light L3 emitted to the outside of the display device 10 through the third light-transmitting region TA3 can be red light.

[0184] Organic layers OML can be spaced apart from each other between the dams BK. Organic layers OML can be located in the light-transmitting regions TA1, TA2, and TA3 separated by the dams BK. For example, organic layers OML can overlap with the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3. Organic layers OML can be positioned in a patterned shape and can be disposed (or directly disposed) on the light-transmitting members TPL, WCL1, and WCL2 respectively on the third direction DR3. For example, organic layers OML can contact the surfaces of the first light-transmitting member TPL, the second light-transmitting member WCL1, and the third light-transmitting member WCL2. Accordingly, organic layers OML can protect the light-transmitting members TPL, WCL1, and WCL2 from etching during the manufacturing process described later. Organic layers OML can be spaced apart from the lower surface of the dams BK and can not cover (or overlap with) the dams BK. For example, the surface of the organic layer OML (e.g., the lower surface of the organic layer OML) may be aligned (or coplanar) with the lower surface of the embankment BK. As used herein, the term "aligned" may mean located in the same plane (coplanar). For example, the surface of the organic layer OML that contacts the second capping layer CPL2 may be located in the same plane (or in the same layer) as the surface of the embankment BK that contacts the second capping layer CPL2.

[0185] The organic layer OML can include a transparent organic material that can transmit light. For example, the organic layer OML can be made of, but is not limited to, acrylic resin, methacrylic resin, polyisoprene resin, vinyl resin, epoxy resin, urethane resin, cellulose resin, or perylene resin.

[0186] In some embodiments, the refractive index of the organic layer OML may be less than 1.7. Since the refractive index of each light-transmitting element TPL, WCL1, or WCL2 is approximately 1.7 to approximately 1.8, the organic layer OML may be formed to have a lower refractive index than that of the light-transmitting elements TPL, WCL1, and WCL2 to reduce light loss.

[0187] A second capping layer CPL2 can be disposed on the surfaces of the embankment BK and the organic layer OML to cover the embankment BK and the organic layer OML. The second capping layer CPL2 prevents damage or contamination to each light-transmitting component TPL, WCL1, or WLC2 and the organic layer OML by preventing impurities such as moisture or air from penetrating from the outside into each light-transmitting component TPL, WCL1, or WLC2 and the organic layer OML. The second capping layer CPL2 can be formed flat without steps. Since the lower surfaces of the embankment BK and the organic layer OML are aligned (or coplanar) with each other as described above, the second capping layer CPL2 formed on the lower surfaces of the embankment BK and the organic layer OML can be flat. In some embodiments, the second capping layer CPL2 can contact (or directly contact) the lower surfaces of the embankment BK and the organic layer OML.

[0188] The second capping layer CPL2 may include inorganic materials. In some embodiments, the second capping layer CPL2 may include materials such as SiO2 and SiN. x or SiO x N y Inorganic materials can be formed in single or multiple layers, but this disclosure is not limited thereto.

[0189] A filler layer (FIL) can be disposed between the substrate TSUB and the substrate SUB. The filler layer (FIL) can be located between the wavelength conversion layer (WCL) and the thin-film encapsulation layer (TFEL) to fill the space between them. In some embodiments, the filler layer (FIL) can contact (or directly contact) the third encapsulation layer (TFE3) of the thin-film encapsulation layer (TFEL) and the second capping layer (CPL2) of the wavelength conversion layer (WCL), but this disclosure is not limited thereto.

[0190] In some embodiments, the filler layer FIL may be made of a material whose extinction coefficient is substantially zero. The refractive index and extinction coefficient can be correlated, and the extinction coefficient can decrease as the refractive index decreases. When the refractive index is below approximately 1.7, the extinction coefficient can converge to substantially zero. In some embodiments, the filler layer FIL may be made of a material having a refractive index below approximately 1.7. Accordingly, it is possible to prevent light provided by the aforementioned self-emissive element from being absorbed by the filler layer FIL as it passes through it, or it is possible to minimize the absorption of light by the filler layer FIL. In some embodiments, the filler layer FIL may be made of an organic material having a refractive index of approximately 1.4 to approximately 1.6.

[0191] Now refer to Figures 6 to 12 To describe the manufacturing of the above-mentioned materials Figure 5 The method of display device 10.

[0192] Figures 6 to 12This is a schematic cross-sectional view illustrating each process in the method of manufacturing the display device 10 according to an embodiment. Figures 6 to 12 The method is to manufacture the above Figure 5 The corresponding display device 10 method.

[0193] A method for manufacturing a display device 10 according to an embodiment may include: forming a color filter layer CFL on a substrate TSUB; sequentially forming a low refractive layer LR and a first capping layer CPL1 on the color filter layer CFL; forming a dam BK on the first capping layer CPL1; forming a hydrophobic layer HPL on the dam BK; forming each light-transmitting member TPL, WCL1, or WCL2 between portions of the dam BK; forming an organic material layer OMLL on the dam BK, the hydrophobic layer HPL, and each light-transmitting member TPL, WCL1, or WCL2; forming an organic layer OML by removing a portion of the organic material layer OMLL and the hydrophobic layer HPL; and forming a second capping layer CPL2 on the dam BK and the organic layer OML.

[0194] First, refer to Figure 6 The color filter layer (CFL) can be formed on the substrate TSUB. The color filter layer (CFL) can be formed using a photolithography process.

[0195] For example, a first color material layer can be applied to a substrate TSUB and patterned using photolithography to form a first color filter 321 including a first light-filtering pattern portion 321a and a first light-blocking pattern portion 321b surrounding the first light-filtering pattern portion 321a. Next, a second color material layer can be applied and then patterned using photolithography to form a third color filter 323 including a third light-filtering pattern portion 323a and a third light-blocking pattern portion 323b surrounding the third light-filtering pattern portion 323a. A third color material layer can be applied and then patterned using photolithography to form a second color filter 322 including a second light-filtering pattern portion 322a and a second light-blocking pattern portion 322b surrounding the second light-filtering pattern portion 322a.

[0196] The formation of the color filter layer CFL can cause the substrate TSUB to be divided into light-transmitting regions TA1 to TA3 and light-blocking regions BA. For example, the first light-transmitting region TA1 overlapping with the first light-filtering pattern portion 321a, the second light-transmitting region TA2 overlapping with the second light-filtering pattern portion 322a, the third light-transmitting region TA3 overlapping with the third light-filtering pattern portion 323a, and the light-blocking region BA overlapping with the first light-blocking pattern portion 321b, the second light-blocking pattern portion 322b, and / or the third light-blocking pattern portion 323b can be defined.

[0197] Next, a low-refractive-index layer LR can be formed on the color filter layer CFL, and a first capping layer CPL1 can be formed on the low-refractive-index layer LR. If the low-refractive-index layer LR comprises an inorganic material, it can be formed using a chemical vapor deposition (CVD) process or a plasma vapor deposition (PVD) process. If the low-refractive-index layer LR comprises an organic material, it can be formed using a solution process such as spin coating or inkjet printing. The first capping layer CPL1 can be formed using either a CVD process or a PVD process.

[0198] Next, refer to Figure 7 The dam BK can be formed on the first capping layer CPL1. The dam BK can be formed by a photolithography process. For example, the dam BK can be formed by coating a dam material layer and then patterning the dam material layer by a photolithography process. The dam BK can be formed on the first capping layer CPL1 to overlap with the light-blocking region BA and not overlap with each of the light-transmitting regions TA1, TA2 or TA3.

[0199] Next, refer to Figure 7 and Figure 8 The hydrophobic layer HPL can be formed on the dam BK. For example, the hydrophobic layer HPL can be formed by performing an ashing and plasma process on the substrate TSUB on which the dam BK is formed.

[0200] The ashing process can be a process for removing residual layers that may be present on the embankment BK and the first capping layer CPL1 on which the embankment BK is formed. The ashing process can be a plasma treatment process using gases such as Ar, N2, He, or O2, or mixtures thereof, as the reactant gas. The ashing process can be performed from a few seconds to a few minutes, but this disclosure is not limited thereto. The ashing process can remove residual layers remaining in the areas between the various portions of the embankment BK (e.g., remaining on the surface of the first capping layer CPL1 on which the light-transmitting element described later is to be formed). If the ashing process is not performed, the diffusivity of the light-transmitting element material falling onto the first capping layer CPL1 may be reduced. Therefore, in embodiments, the ashing process can be performed to remove residual layers, thereby improving the diffusivity of the light-transmitting element material.

[0201] Plasma processing can be used to form a hydrophobic layer (HPL) on a dam BK. Plasma processing can use CF4 gas. When performing a plasma process using CF4 gas on the dam BK (hereinafter also referred to as the CF4 plasma process), the CF4 plasma can combine with the carbon (C) of the dam BK to form CF3 chains on the surface of the dam BK. The CF3 chains formed on the surface of the dam BK exhibit hydrophobicity by lowering the surface energy. Figure 8In the diagram, CF3 chains formed on the surface of embankment BK are shown and described as a hydrophobic layer HPL. However, in reality, CF3 chains may not be viewed as a layer.

[0202] Plasma processes can be performed at pressures ranging from approximately 30 mTorr to approximately 120 mTorr. Plasma processes can be performed at pressures of approximately 100 mTorr. Plasma processes can be performed at power ranges from approximately 400 W to 600 W. Plasma processes can be performed at power levels of approximately 500 W.

[0203] The plasma process can be performed for approximately 20 to 40 seconds. The plasma process can be performed for approximately 30 seconds.

[0204] In some embodiments, after the formation of the dam BK, an ashing process using O2 gas can be performed for approximately 60 seconds to remove the residual layer, and a plasma process using CF4 gas can be performed for approximately 30 seconds at a pressure of approximately 100 mTorr and a power of approximately 500 W to form the hydrophobic layer HPL.

[0205] If an antistatic process (e.g., a process for removing static electricity) is performed after the plasma process, the hydrophobicity of the dam BK surface may be lost. For example, if an antistatic process using O2, Ar, or N2 gas is performed, the CF3 chains bound to the surface of the dam BK may be lost, resulting in a loss of hydrophobicity. Therefore, in this embodiment, the antistatic process using O2, Ar, or N2 gas can be omitted.

[0206] If a baking process is performed after the plasma process, the hydrophobicity of the surface of the dam BK may be reduced. For example, the CF3 chains bonded to the surface of the dam BK may be lost due to the high-temperature heat treatment of the baking process, resulting in a loss of hydrophobicity. Therefore, in this embodiment, the baking process can be omitted.

[0207] The hydrophobic layer HPL can be formed with approximately 1000 The following thickness ranges for single layers (e.g., fluorine layers). Figure 8 The hydrophobic layer HPL shown can be formed only on the upper surface of the dam BK. Alternatively, by performing a CF4 plasma process within the aforementioned high-power range, the hydrophobic layer HPL can be formed on the upper surface of the dam BK in addition to its side surfaces. If the hydrophobic layer HPL is also formed on the side surfaces of the dam BK, then defects may occur where each of the light-transmitting elements TPL, WCL1, or WCL2, described later, rises from the side surfaces of the dam BK.

[0208] Next, refer to Figure 9The first light-transmitting member TPL, the second light-transmitting member WCL1, or the third light-transmitting member WCL2 can be formed in the corresponding light-transmitting areas TA1, TA2, or TA3 formed between the various parts of the embankment BK.

[0209] Each of the first light-transmitting component TPL, the second light-transmitting component WCL1, and the third light-transmitting component WCL2 can be formed by an inkjet printing process. The first light-transmitting component TPL, the second light-transmitting component WCL1, and the third light-transmitting component WCL2 can be formed sequentially, or they can be formed out of order.

[0210] In some embodiments, ink comprising a first light-transmitting component material (e.g., base resin 330 and light diffuser 331) can be applied to a first light-transmitting region TA1 using an inkjet printing process, and then dried to form a first light-transmitting component TPL. Ink comprising a second light-transmitting component material (e.g., base resin 330, light diffuser 331, and first wavelength converter 332) can be applied to a second light-transmitting region TA2 using an inkjet printing process, and then dried to form a second light-transmitting component WCL1. Ink comprising a third light-transmitting component material (e.g., base resin 330, light diffuser 331, and second wavelength converter 333) can be applied to a third light-transmitting region TA3 using an inkjet printing process, and then dried to form a third light-transmitting component WCL2.

[0211] Because the hydrophobic layer HPL is disposed on the upper surface of the embankment BK, when each type of light-transmitting material is applied to the corresponding light-transmitting area, it can prevent the light-transmitting material from overflowing from the light-transmitting area across the surface of the embankment BK into other adjacent light-transmitting areas. For example, when the second light-transmitting material is applied to the second light-transmitting area TA2, it can prevent the second light-transmitting material from overflowing into the adjacent first light-transmitting area TA1 or the adjacent third light-transmitting area TA3.

[0212] Next, refer to Figure 10 The organic material layer OMLL can be formed on the embankment BK, the hydrophobic layer HPL, and each light-transmitting component TPL, WCL1, or WCL2. The organic material layer OMLL can be used to form... Figure 5 The organic layer OML shown is a layer that can be formed using solution processes such as spin coating or inkjet printing. The organic material layer OMLL can be formed to completely cover the dam BK, the hydrophobic layer HPL, and each light-transmitting element TPL, WCL1, or WCL2.

[0213] Next, refer to Figure 10 and Figure 11A portion of the organic material layer OMLL and the hydrophobic layer HPL are removed by an etching process. The etching process can be dry etching. Depending on the etching process, the organic material layer OMLL can be etched from its surface toward the substrate TSUB, and the hydrophobic layer HPL can also be etched and removed. In the etching process, the surface of the dam BK can also be partially etched to completely remove the hydrophobic layer HPL. Accordingly, a portion of the organic material layer OMLL and the hydrophobic layer HPL can be removed, and the organic material layer OMLL can be formed as an organic layer OML. The upper surface of the organic layer OML can be aligned (or coplanar) with the upper surface of the dam BK. The aforementioned organic material layer OMLL prevents each light-transmitting component TPL, WCL1, or WCL2 from being damaged during the etching process of the hydrophobic layer HPL.

[0214] Although the hydrophobic layer HPL includes perfluorinated compounds (e.g., CF3 chains), because the hydrophobic layer HPL is removed by the above-described etching process, perfluorinated compounds can be prevented from remaining in the display device 10. Therefore, the need for the removal of perfluorinated compounds in the art to which this disclosure pertains can be met.

[0215] Next, refer to Figure 12 The second capping layer CPL2 can be formed on the embankment BK and the organic layer OML. Like the first capping layer CPL1 described above, the second capping layer CPL2 can be formed by CVD or PVD processes.

[0216] Next, as Figure 5 As shown, the filler layer FIL can be formed on the second capping layer CPL2, and the substrate SUB on which the light-emitting element layer EML and the thin film encapsulation layer TFEL are formed can be bonded to the substrate TSUB to produce the display device 10 according to the embodiment.

[0217] According to the above embodiment, since the process of forming a hydrophobic layer HPL on the dam BK and then removing the hydrophobic layer HPL is performed, perfluorinated compounds can be prevented from remaining in the display device 10, and the display quality of the display device 10 can be improved. Since the organic material layer OMLL is formed on each light-transmitting member TPL, WCL1, or WCL2, each light-transmitting member TPL, WCL1, or WCL2 can be prevented from being damaged during the process of removing the hydrophobic layer HPL. Since the hydrophobic layer HPL is formed by performing a CF4 plasma process under the above process conditions, the surface of the dam BK can exhibit hydrophobicity, and the surface of the first capping layer CPL1 between the various parts of the dam BK can exhibit hydrophilicity. Therefore, the diffusion of each light-transmitting member material on the surface of the first capping layer CPL1 can be improved when each light-transmitting member material is coated, and each light-transmitting member material can be prevented from overflowing from the light-transmitting area across the surface of the dam BK into the adjacent light-transmitting area.

[0218] In the following description, other embodiments of the display device 10 will be described with reference to other accompanying drawings.

[0219] Figure 13 This is a schematic cross-sectional view of the display device 10 according to an embodiment.

[0220] refer to Figure 13 This embodiment is similar to the one described above. Figure 5 The difference in the embodiments is that a third capping layer CPL3 is further disposed between each light-transmitting member TPL, WCL1 or WCL2 and the organic layer OML. Therefore, descriptions of elements and features identical to those in the above embodiments will be omitted, and the differences will be described below.

[0221] The third capping layer CPL3 can be disposed between each light-transmitting component TPL, WCL1, or WCL2 and the organic layer OML, and between different parts of the embankment BK. The third capping layer CPL3 can contact (or directly contact) the surface of each light-transmitting component TPL, WCL1, or WCL2 and the surface of the organic layer OML. The third capping layer CPL3 can extend to the side surface of the embankment BK while simultaneously covering each light-transmitting component TPL, WCL1, or WCL2. For example, the third capping layer CPL3 can cover each light-transmitting component TPL, WCL1, or WCL2 to prevent damage to each light-transmitting component TPL, WCL1, or WCL2 during the aforementioned processes.

[0222] In some embodiments, the lower surface of the third capping layer CPL3 (e.g., the surface of the third capping layer CPL3 closest to the substrate SUB) may be aligned (or coplanar) with the lower surface of the embankment BK. The lower surface of the third capping layer CPL3 may contact (or directly contact) the upper surface of the second capping layer CPL2. In some embodiments, the third capping layer CPL3 may be surrounded by each light-transmitting member TPL, WCL1 or WCL2, the organic layer OML, the embankment BK, and the second capping layer CPL2. In some embodiments, the organic layer OML may be surrounded by the second capping layer CPL2 and the third capping layer CPL3.

[0223] The third capping layer CPL3 may include inorganic materials. In some embodiments, the third capping layer CPL3 may include materials such as SiO2 and SiN. x or SiO x N y Inorganic materials can be formed in single or multiple layers, but this disclosure is not limited thereto.

[0224] Because it includes a third cover layer CPL3 covering each light-transmitting component TPL, WCL1, or WCL2, it can prevent each light-transmitting component TPL, WCL1, or WCL2 from being damaged during the above-described process.

[0225] Figures 14 to 17 This is a schematic cross-sectional view illustrating each process in the method of manufacturing the display device 10 according to an embodiment. Figures 14 to 17 It shows in Figure 13 The process of forming a color filter layer (CFL) and a wavelength conversion layer (WCL) on a substrate TSUB.

[0226] The method for manufacturing the display device 10 according to the embodiment can be referred to above. Figures 6 to 12 The described method further includes a process for forming a third capping layer CPL3. For example, the method may include: forming a capping material layer CPLL on the embankment BK, the hydrophobic layer HPL, and each light-transmitting member TPL, WCL1, or WCL2; forming an organic material layer OMLL on the capping material layer CPLL; forming an organic layer OML and the third capping layer CPL3 by removing a portion of the organic material layer OMLL, a portion of the capping material layer CPLL, and the hydrophobic layer HPL; and forming a second capping layer CPL2 on the embankment BK, the organic layer OML, and the third capping layer CPL3.

[0227] refer to Figure 14 The cover material layer CPLL can be formed on the embankment BK, the hydrophobic layer HPL, and each light-transmitting component TPL, WCL1, or WCL2. (See above reference.) Figures 6 to 9 As described, prior to the formation of the capping material layer CPLL, the embankment BK, the hydrophobic layer HPL, and each light-transmitting element TPL, WCL1, or WCL2 can be formed on the first capping layer CPL1. Because these processes are similar to those described above... Figures 6 to 9 Since the processes described are the same, their redundant descriptions will be omitted.

[0228] Similar to the first capping layer CPL1 described above, the capping material layer CPLL can be formed using CVD or PVD processes. The capping material layer CPLL can be formed as a capping embankment BK, a hydrophobic layer HPL, and each light-transmitting component TPL, WCL1, or WCL2.

[0229] Next, refer to Figure 15 An organic material layer (OMLL) can be formed on a capping material layer (CPLL). The organic material layer (OMLL) can be used to form... Figure 13 The organic layer OML shown is a layer that can be formed using solution processes such as spin coating or inkjet printing. The organic material layer OMLL can be formed to a thickness sufficient to flatten the steps of the capping material layer CPLL.

[0230] Next, refer to Figure 15 and Figure 16A portion of the capping material layer CPLL, a portion of the organic material layer OMLL, and the hydrophobic layer HPL can be removed by an etching process. According to the etching process, the organic material layer OMLL can be etched from its surface toward the substrate TSUB, and a portion of the capping material layer CPLL and the hydrophobic layer HPL can also be etched and removed. Accordingly, a portion of the capping material layer CPLL, a portion of the organic material layer OMLL, and the hydrophobic layer HPL can be removed to form the organic material layer OMLL as the organic layer OML and the capping material layer CPLL as the third capping layer CPL3. The upper surface of the organic layer OML can be aligned (or coplanar) with the upper surface of the substrate TSUB and the third capping layer CPL3. The aforementioned organic material layer OMLL and capping material layer CPLL prevent each light-transmitting component TPL, WCL1, or WCL2 from being damaged during the etching process of the hydrophobic layer HPL.

[0231] Although the hydrophobic layer HPL includes perfluorinated compounds (e.g., CF3 chains), because the hydrophobic layer HPL is removed by the above-described etching process, perfluorinated compounds can be prevented from remaining in the display device 10. Therefore, the need for the removal of perfluorinated compounds in the art to which this disclosure pertains can be met.

[0232] Next, refer to Figure 17 The second capping layer CPL2 can be formed on the base plate BK, the third capping layer CPL3, and the organic layer OML. As described above, the filler layer FIL can be formed on the second capping layer CPL2, and the substrate SUB on which the light-emitting element layer EML and the thin-film encapsulation layer TFEL are formed can be bonded to the substrate TSUB for production. Figure 13 The display device 10 according to an embodiment is shown in the figure.

[0233] According to the above embodiments, since the cover material layer CPLL is formed on each light-transmitting component TPL, WCL1 or WCL2, it is possible to prevent each light-transmitting component TPL, WCL1 or WCL2 from being damaged during the process of removing the hydrophobic layer HPL.

[0234] Figure 18 This is a schematic cross-sectional view of the display device 10 according to an embodiment.

[0235] refer to Figure 18 This embodiment is similar to the one described above. Figure 13 The difference in this embodiment is that the second capping layer CPL2 is omitted. Because the second capping layer CPL2 is omitted, the embankment BK, the third capping layer CPL3, and the organic layer OML can contact (or directly contact) the filler layer FIL. Since each light-transmitting element TPL, WCL1, or WCL2 is covered and protected by the third capping layer CPL3, the second capping layer CPL2 can be omitted.

[0236] Figure 18 The display device 10 shown can be modified by omitting the above description. Figure 17 It is manufactured using the process of forming the second capping layer CPL2.

[0237] Omitting the second capping layer CPL2 can simplify the manufacturing process and reduce manufacturing costs.

[0238] Figure 19 This is a schematic cross-sectional view of the display device 10 according to an embodiment.

[0239] refer to Figure 19 The display device 10 according to this embodiment is the same as that described above. Figures 5 to 18 The difference in the display device 10 of the embodiment is that the wavelength conversion layer WCL is disposed (or directly disposed) on the thin-film encapsulation layer TFEL. Therefore, the description of elements and features that are the same as those in the above embodiments will be omitted, and the differences will be described below.

[0240] The wavelength conversion layer (WCL) can be disposed on the thin-film encapsulation layer (TFEL). The wavelength conversion layer (WCL) may include a base plate (BK), a first light-transmitting member (TPL), a second light-transmitting member (WCL1), a third light-transmitting member (WCL2), an organic layer (OML), and a second capping layer (CPL2).

[0241] The dam BK can be disposed on the third encapsulation layer TFE3 of the thin-film encapsulation layer TFEL to form a space for accommodating the light-transmitting components TPL, WCL1, and WCL2. In a plan view, the dam BK can surround each light-transmitting component TPL, WCL1, or WCL2. The dam BK can overlap with the non-light-emitting region NELA and the light-blocking region BA. The dam BK may not overlap with the light-emitting regions ELA1 to ELA3 and the light-transmitting regions TA1 to TA3.

[0242] The first light-transmitting component TPL can be disposed in the space defined by the embankment BK, on ​​the third encapsulation layer TFE3, and can overlap with the first light-emitting region ELA1 and the first light-transmitting region TA1 on the third-direction DR3. The first light-transmitting component TPL can contact (or directly contact) the third encapsulation layer TFE3 and the embankment BK. The first light-transmitting component TPL may include a base resin 330 and a light diffuser 331.

[0243] The second light-transmitting component WCL1 can be disposed in the space defined by the embankment BK and on the third encapsulation layer TFE3, and can overlap with the second light-emitting region ELA2 and the second light-transmitting region TA2 on the third-direction DR3. The second light-transmitting component WCL1 can contact (or directly contact) the third encapsulation layer TFE3 and the embankment BK. The second light-transmitting component WCL1 may include a base resin 330, a light scatterer 331 dispersed in the base resin 330, and a first wavelength converter 332 dispersed in the base resin 330.

[0244] The third light-transmitting component WCL2 can be disposed in the space defined by the embankment BK, on ​​the third encapsulation layer TFE3, and can overlap with the third light-emitting region ELA3 and the third light-transmitting region TA3 on the third-direction DR3. The third light-transmitting component WCL2 can contact (or directly contact) the third encapsulation layer TFE3 and the embankment BK. The third light-transmitting component WCL2 may include a base resin 330, a light scatterer 331 dispersed in the base resin 330, and a second wavelength converter 333 dispersed in the base resin 330.

[0245] The organic layer OML can be located in the light-transmitting regions TA1, TA2, and TA3 defined by the embankment BK, respectively. For example, the organic layer OML can overlap with the first light-transmitting region TA1, the second light-transmitting region TA2, and the third light-transmitting region TA3. The organic layer OML can be positioned in a patterned shape and can be disposed (or directly disposed) on the light-transmitting components TPL, WCL1, and WCL2 respectively on the third direction DR3. The organic layer OML can protect the light-transmitting components TPL, WCL1, and WCL2 from etching during the manufacturing process described later. The organic layer OML can be spaced apart from the upper surface of the embankment BK and can not cover the embankment BK (or not overlap with the embankment BK). For example, the upper surface of the organic layer OML can be aligned (or coplanar) with the upper surface of the embankment BK.

[0246] In some embodiments, the height of the upper surface of the dam BK, measured from the thin-film encapsulation layer TFEL, can be equal to the height of the upper surface of the organic layer OML, measured from the thin-film encapsulation layer TFEL. For example, the upper surface of the dam BK and the upper surface of the organic layer OML can be aligned with each other (or coplanar), for example, the upper surface of the dam BK and the upper surface of the organic layer OML can be disposed in the same plane (or in the same layer).

[0247] A second capping layer CPL2 can be disposed on the embankment BK and the organic layer OML to cover them. The second capping layer CPL2 prevents damage or contamination to each light-transmitting element TPL, WCL1, or WLC2 and the organic layer OML by preventing impurities such as moisture or air from penetrating from the outside into each light-transmitting element TPL, WCL1, or WLC2 and the organic layer OML. The second capping layer CPL2 can be formed flat without steps. Since the upper surfaces of the embankment BK and the organic layer OML are aligned (or coplanar) with each other, the second capping layer CPL2 formed on the upper surfaces of the embankment BK and the organic layer OML can be flat. In some embodiments, the second capping layer CPL2 can contact (or directly contact) the upper surfaces of the embankment BK and the organic layer OML.

[0248] A color filter layer (CFL), a low-refractive-index layer (LR), and a first capping layer (CPL1) may be sequentially disposed on the surface of a substrate (TSUB). A filler layer (FIL) may be disposed between the substrate (TSUB) and the substrate (SUB). The filler layer (FIL) may be located between the first capping layer (CPL1) and the second capping layer (CPL2) of the wavelength conversion layer (WCL) to fill the space between the first capping layer (CPL1) and the second capping layer (CPL2) of the wavelength conversion layer (WCL). In some embodiments, the filler layer (FIL) may contact (or directly contact) the first capping layer (CPL1) and the second capping layer (CPL2) of the wavelength conversion layer (WCL), but this disclosure is not limited thereto.

[0249] Now refer to Figures 20 to 25 To describe the manufacturing of the above-mentioned materials Figure 19 The method of the display device 10. In the method described below, the reference above is consistent. Figures 6 to 12 The process described may be briefly described or may not be described.

[0250] Figures 20 to 25 This is a schematic cross-sectional view illustrating each process in the method of manufacturing the display device 10 according to an embodiment. Figures 20 to 25 The method is to manufacture the above and Figure 19 The corresponding display device 10 method.

[0251] A method of manufacturing a display device 10 according to an embodiment may include: forming a dam BK on a thin-film encapsulation layer TFEL; forming a hydrophobic layer HPL on the dam BK; forming each light-transmitting member TPL, WCL1, or WCL2 between portions of the dam BK; forming an organic material layer OMLL on the dam BK, the hydrophobic layer HPL, and each light-transmitting member TPL, WCL1, or WCL2; forming an organic layer OML by removing a portion of the organic material layer OMLL and the hydrophobic layer HPL; and forming a second capping layer CPL2 on the dam BK and the organic layer OML.

[0252] First, refer to Figure 20 A substrate SUB, on which a light-emitting element layer (EML) and a thin-film encapsulation layer (TFEL) are formed, can be fabricated. The EML and TFEL can be formed by stacking each layer on the substrate SUB or by patterning each layer using a photolithography process after stacking each layer.

[0253] Next, the dam BK can be formed on the thin-film encapsulation layer TFEL. The dam BK can be formed on the third encapsulation layer TFE3 to overlap with the non-luminescent region NELA and not with each luminescent region ELA1, ELA2 or ELA3.

[0254] Next, refer to Figure 20 and Figure 21The hydrophobic layer HPL can be formed on the dam BK. For example, the hydrophobic layer HPL can be formed by performing an ashing and plasma processing on a substrate SUB on which the dam BK is formed. Since the above has already been... Figures 6 to 12 The embodiments describe in detail the ashing process and plasma process for forming the hydrophobic HPL layer, therefore their descriptions will be omitted.

[0255] Next, refer to Figure 22 The first light-transmitting component TPL, the second light-transmitting component WCL1, and the third light-transmitting component WCL2 are respectively formed in the light-emitting regions ELA1 to ELA3 formed between the various parts of the embankment BK.

[0256] Since the hydrophobic layer HPL is disposed on the upper surface of the embankment BK, it can prevent the light-transmitting material from overflowing from the light-emitting area across the surface of the embankment BK into other adjacent light-emitting areas when each light-transmitting material is coated onto the corresponding light-emitting area.

[0257] Next, refer to Figure 23 The organic material layer OMLL can be formed on the embankment BK, the hydrophobic layer HPL, and each light-transmitting component TPL, WCL1, or WCL2. The organic material layer OMLL can be formed to completely cover the embankment BK, the hydrophobic layer HPL, and each light-transmitting component TPL, WCL1, or WCL2.

[0258] Next, refer to Figure 23 and Figure 24 A portion of the organic material layer OMLL and the hydrophobic layer HPL can be removed by an etching process. According to the etching process, the organic material layer OMLL can be etched from its surface toward the substrate SUB, and the hydrophobic layer HPL can also be etched and removed. Accordingly, a portion of the organic material layer OMLL and the hydrophobic layer HPL can be removed to form the organic material layer OMLL as the organic layer OML. The upper surface of the organic layer OML can be aligned (or coplanar) with the upper surface of the embankment BK. The aforementioned organic material layer OMLL can prevent each light-transmitting component TPL, WCL1, or WCL2 from being damaged during the etching process of the hydrophobic layer HPL.

[0259] Next, refer to Figure 25 The second capping layer, CPL2, can be formed on the embankment BK and the organic layer OML.

[0260] Next, as Figure 19 As shown, the filler layer FIL can be formed on a substrate TSUB on which a color filter layer CFL, a low refractive index layer LR and a first capping layer CPL1 are formed, and can be bonded to the substrate SUB to produce a display device 10 according to an embodiment.

[0261] Other embodiments of the display device 10 will now be described with reference to other accompanying drawings.

[0262] Figure 26 This is a schematic cross-sectional view of the display device 10 according to an embodiment.

[0263] refer to Figure 26 This embodiment is similar to the one described above. Figure 19 The difference in the embodiments is that a third capping layer CPL3 is further disposed between each light-transmitting member TPL, WCL1 or WCL2 and the organic layer OML. Therefore, descriptions of elements and features identical to those in the above embodiments will be omitted, and the differences will be described below.

[0264] The third capping layer CPL3 can be disposed between each light-transmitting component TPL, WCL1, or WCL2 and the organic layer OML, and between different parts of the embankment BK. The third capping layer CPL3 can contact (or directly contact) the surface of each light-transmitting component TPL, WCL1, or WCL2 and the surface of the organic layer OML. The third capping layer CPL3 can extend to the side surface of the embankment BK while simultaneously covering each light-transmitting component TPL, WCL1, or WCL2. For example, the third capping layer CPL3 can cover each light-transmitting component TPL, WCL1, or WCL2 to prevent damage to each light-transmitting component TPL, WCL1, or WCL2 during the aforementioned processes.

[0265] In some embodiments, the upper surface of the third capping layer CPL3 (e.g., the surface of the third capping layer CPL3 furthest from the substrate SUB) may be aligned (or coplanar) with the upper surface of the embankment BK. The upper surface of the third capping layer CPL3 may contact (or directly contact) the lower surface of the second capping layer CPL2. In some embodiments, the third capping layer CPL3 may be surrounded by each light-transmitting member TPL, WCL1 or WCL2, the organic layer OML, the embankment BK, and the second capping layer CPL2.

[0266] Because it includes a third cover layer CPL3 covering each light-transmitting component TPL, WCL1, or WCL2, it can prevent each light-transmitting component TPL, WCL1, or WCL2 from being damaged during the above-described process.

[0267] Figures 27 to 30 This is a schematic cross-sectional view illustrating each process in the method of manufacturing the display device 10 according to an embodiment. Figures 27 to 30 It shows in Figure 26 The process of forming a wavelength conversion layer (WCL) on a thin-film encapsulation layer (TFEL).

[0268] The method for manufacturing the display device 10 according to the embodiment can be referred to above. Figures 20 to 25The described method further includes a process for forming a third capping layer CPL3. For example, the method may include: forming a capping material layer CPLL on the embankment BK, the hydrophobic layer HPL, and each light-transmitting member TPL, WCL1, or WCL2; forming an organic material layer OMLL on the capping material layer CPLL; forming an organic layer OML and the third capping layer CPL3 by removing a portion of the organic material layer OMLL, a portion of the capping material layer CPLL, and the hydrophobic layer HPL; and forming a second capping layer CPL2 on the embankment BK, the organic layer OML, and the third capping layer CPL3.

[0269] refer to Figure 27 The cover material layer CPLL can be formed on the embankment BK, the hydrophobic layer HPL, and each light-transmitting component TPL, WCL1, or WCL2. (See above reference.) Figures 20 to 22 As described, prior to the formation of the capping material layer CPLL, the embankment BK, the hydrophobic layer HPL, and each light-transmitting element TPL, WCL1, or WCL2 are formed on the third encapsulation layer TFE3 of the thin-film encapsulation layer TFEL. Because these processes are similar to those described above... Figures 20 to 22 The processes described are identical, therefore redundant descriptions will be omitted. The cover material layer CPLL can be formed as a cover embankment BK, a hydrophobic layer HPL, and each light-transmitting element TPL, WCL1, or WCL2.

[0270] Next, refer to Figure 28 An organic material layer (OMLL) can be formed on a capping material layer (CPLL). The organic material layer (OMLL) can be used to form... Figure 26 The organic layer OML shown is a layer that can be formed using solution processes such as spin coating or inkjet printing. The organic material layer OMLL can be formed to a thickness sufficient to flatten the steps of the capping material layer CPLL.

[0271] Next, refer to Figure 28 and Figure 29 A portion of the capping material layer CPLL, a portion of the organic material layer OMLL, and the hydrophobic layer HPL can be removed by an etching process. According to the etching process, the organic material layer OMLL can be etched from its surface toward the substrate SUB, and a portion of the capping material layer CPLL and the hydrophobic layer HPL can also be etched and removed. Accordingly, a portion of the capping material layer CPLL, a portion of the organic material layer OMLL, and the hydrophobic layer HPL can be removed to form the organic material layer OMLL as the organic layer OML and the capping material layer CPLL as the third capping layer CPL3. The upper surface of the organic layer OML can be aligned (or coplanar) with the upper surface of the substrate SUB and the upper surface of the third capping layer CPL3. The aforementioned organic material layer OMLL and capping material layer CPLL prevent each light-transmitting component TPL, WCL1, or WCL2 from being damaged during the etching process of the hydrophobic layer HPL.

[0272] Next, refer to Figure 30 The second capping layer CPL2 can be formed on the embankment BK, the third capping layer CPL3, and the organic layer OML. As described above, the filler layer FIL can be formed on the substrate TSUB on which the color filter layer CFL, the low refractive index layer LR, and the first capping layer CPL1 are formed, and can be bonded to the substrate SUB to produce the display device 10 according to the embodiment.

[0273] According to the above embodiments, since the cover material layer CPLL is formed on each light-transmitting component TPL, WCL1 or WCL2, it is possible to prevent each light-transmitting component TPL, WCL1 or WCL2 from being damaged during the process of removing the hydrophobic layer HPL.

[0274] Figure 31 This is a schematic cross-sectional view of the display device 10 according to an embodiment.

[0275] refer to Figure 31 This embodiment is similar to the one described above. Figure 26 The difference in this embodiment is that the second capping layer CPL2 is omitted. Because the second capping layer CPL2 is omitted, the embankment BK, the third capping layer CPL3, and the organic layer OML can contact (or directly contact) the filler layer FIL. Since each light-transmitting element TPL, WCL1, or WCL2 is covered and protected by the third capping layer CPL3, the second capping layer CPL2 can be omitted.

[0276] Figure 31 The display device 10 shown can be modified by omitting the above description. Figure 30 It is manufactured using the process of forming the second capping layer CPL2.

[0277] Omitting the second capping layer CPL2 can simplify the manufacturing process and reduce manufacturing costs.

[0278] Experimental examples of this disclosure will be described below.

[0279] <Experiment Example 1>

[0280] In SiO x or SiO x N y After the thin layer is formed on the glass substrate, the embankment can be formed on SiO. x or SiO x N yOn a thin layer. Then, CF4 plasma processing and antistatic processing were performed under different conditions (gas and time). After the antistatic process, a baking process was performed optically. Then, different amounts of translucent component ink were dropped onto the patterned portions separated by the dike, the dike surface, and the dummy portions (the outermost area without the dike), and the image of the ink was measured and displayed. Figure 32 The CF4 plasma process and antistatic process were performed at 100 mTorr pressure and 500 W power.

[0281] Figure 32 This is a schematic diagram showing an image of the ink formed according to Experimental Example 1. Figure 32 In this context, CVD represents the material of the thin layer formed on the glass substrate, DoB represents the embankment surface, and 1D, 3D, and 5D represent the number of ink droplets. The degree of wettability and hydrophobicity is indicated in the order of X, Δ, O, and ◎.

[0282] refer to Figure 32 Compared to other examples, the dike formed in SiO x In the case of thin layers, both wettability and hydrophobicity are better when the CF4 plasma process is performed for 30 seconds or 10 seconds, the antistatic process is performed in CF4 gas, and the baking process is performed. When the antistatic process is performed in O2 gas, the hydrophobicity imparted by the CF4 plasma may be lost (or completely lost).

[0283] <Experimental Example 2>

[0284] Under the same conditions as in Experimental Example 1, the O2 ashing process can be performed immediately after dam formation for 60 seconds, and a deionized (DI) water rinsing process can be optionally performed. The O2 ashing process can be performed for approximately 60 seconds. The results are shown in... Figure 33 middle.

[0285] Figure 33 This is a schematic diagram showing an image of the ink formed according to Experimental Example 2. Figure 33 In this context, Ref. can indicate a situation where the CF4 plasma process, antistatic process, baking process, and DI water cleaning process are not performed after the dike is formed.

[0286] refer to Figure 33 Even with O2 ashing, the wettability of the patterned areas may not improve. It was found that when an antistatic process is performed in Ar or N2 gas after the CF4 plasma process, the hydrophobicity of the patterned areas of the embankment may be lost. Furthermore, it was found that when a baking process is performed after the CF4 plasma process, the hydrophobicity of the patterned areas is reduced.

[0287] <Experiment Example 3>

[0288] SiO x N y Thin layer or SiO x Thin layers can be formed on glass substrates. Barriers can be formed on SiO₂. x or SiO x N y On a thin layer, O2 ashing, CF4 plasma processing, CF4 antistatic processing, and baking processes can then be selectively performed to produce multiple samples. The light-transmitting component ink can then be dropped onto the pixel portions defined by the dike and onto the dike surface DoB.

[0289] Sample #127F can be produced by performing an O2 ashing process for 30 seconds, a CF4 plasma process for 30 seconds at a pressure of 100 mTorr and a power of 500 W, and a CF4 antistatic process for 30 seconds in CF4 gas at a pressure of 100 mTorr.

[0290] Sample #80F can be produced by performing a CF4 plasma process for 10 seconds under essentially the same conditions as sample #127F.

[0291] Sample #74F can be produced by performing an O2 ashing process for 60 seconds under essentially the same conditions as sample #127F, omitting the CF4 plasma process.

[0292] Sample #73F can be produced by performing an O2 ashing process for 60 seconds under essentially the same conditions as sample #127F, omitting the CF4 plasma process, and performing a CF4 antistatic process at a pressure of 70 mTorr.

[0293] Sample #72F can be produced by performing an O2 ashing process for 60 seconds under essentially the same conditions as sample #127F, omitting the CF4 plasma process, and performing a CF4 antistatic process at a pressure of 30 mTorr.

[0294] The image and size of the ink droplets on the above samples, as well as the surface energy (MCC) of the embankment surface, can be measured and displayed. Figure 34 and Figure 35 middle. Figure 34 and Figure 35 This is a schematic diagram showing the image and size of the ink droplets on the sample described above according to Experimental Example 3, as well as the surface energy of the embankment surface. Figure 34 This shows the formation of dikes in SiO2. x N y The situation on thin layers, and Figure 35 This shows the formation of dikes in SiO2. x The situation on thin layers. Figure 34 and Figure 35 In this context, PoB indicates after baking.

[0295] refer to Figure 34 It was found that, compared with samples #127F and #80F produced by performing the CF4 plasma process, samples #74F and #73F produced by omitting the CF4 plasma process could achieve SiO₂ in the pixel portion. x N y The thin layer showed good ink droplet diffusion. All samples were found to be hydrophobic on the dike surface.

[0296] refer to Figure 35 It was found that, compared with samples #127F and #80F produced by performing the CF4 plasma process, samples #74F and #73F produced by omitting the CF4 plasma process could achieve SiO₂ in the pixel portion. x The thin layer showed good ink droplet diffusion. All samples were found to be hydrophobic on the dike surface.

[0297] As is evident from the results of Experimental Example 3, by omitting the CF4 plasma process and baking process and performing the O2 ashing process and CF4 antistatic process, excellent hydrophobicity can be imparted to the dam surface, and excellent wettability can be imparted to the pixel portion (SiO2) defined by the dam. x or SiO x N y (The surface of a thin layer).

[0298] The above Figures 5 to 31 The embodiments disclose a process for forming a hydrophobic layer HPL on the surface of the embankment BK by performing an ashing process and a plasma process. The ashing process can correspond to the O2 ashing process of Experimental Example 3, and the plasma process can correspond to the CF4 plasma process of Experimental Example 3.

[0299] In this disclosure, an ashing process and a plasma process can be performed on the embankment BK to impart excellent hydrophobicity to the surface of the embankment BK, and excellent wettability can be imparted to the light-transmitting regions TA1 to TA3 separated by the embankment BK. Accordingly, when forming each light-transmitting component TPL, WCL1 or WCL2, it is possible to prevent the light-transmitting component material (ink) from overflowing into adjacent light-transmitting regions.

[0300] In the display device, the method of manufacturing the display device, and the electronic device according to the embodiments, a process of forming a hydrophobic layer on a dam and then removing the hydrophobic layer is performed. Therefore, it is possible to prevent perfluorinated compounds from remaining in the display device and to improve the display quality of the display device.

[0301] Because the organic material layer is formed on each light-transmitting component, it can prevent each light-transmitting component from being damaged during the process of removing the hydrophobic layer.

[0302] Because the hydrophobic layer is formed by performing a CF4 plasma process under specific process conditions, the surface of the dike can exhibit hydrophobicity, and the surface of the capping layer between the various parts of the dike can exhibit hydrophilicity. Therefore, the diffusion of each light-transmitting component material on the surface of the capping layer can be improved when coating each light-transmitting component material, and the overflow of each light-transmitting component material from the light-transmitting area across the surface of the dike into adjacent light-transmitting areas can be prevented.

[0303] However, the effects of this disclosure are not limited to those set forth herein. The above and other effects of this disclosure will become more apparent to those skilled in the art upon reference to the claims.

[0304] The display device according to embodiments of the present disclosure can be applied to various electronic devices. An electronic device according to an embodiment of the present disclosure may include the above-described display device, and in addition to the display device, an electronic device according to an embodiment of the present disclosure may further include modules or devices with additional functions.

[0305] Figure 36 This is a schematic block diagram of an electronic device 1 according to an embodiment of the present disclosure.

[0306] refer to Figure 36 An electronic device 1 according to an embodiment of the present disclosure may include a display module 11, a processor 12, a memory 13, and a power module 14.

[0307] The processor 12 may include at least one of a central processing unit (CPU), an application processor (AP), a graphics processing unit (GPU), a communication processor (CP), an image signal processor (ISP), and a controller.

[0308] The memory 13 can store the data information required for the operation of the processor 12 or the display module 11. When the processor 12 executes the application program stored in the memory 13, image data signals and / or input control signals are transmitted to the display module 11, which can process the received signals and output image information through the display screen.

[0309] The power module 14 may include a power supply module (e.g., such as a power adapter or battery) and a power conversion module that converts the power supplied by the power supply module to generate the power required for the operation of the electronic device 1.

[0310] At least one of the components of an electronic device 1 according to an embodiment of the present disclosure may be included in a display device 10 according to an embodiment of the present disclosure. Some modules of functionally independent modules included in a module may be included in the display device 10, and other modules may be provided separately from the display device 10. For example, the display device 10 may include a display module 11, and a processor 12, a memory 13, and a power module 14 may be provided in the form of other devices within the electronic device 1 besides the display device 10.

[0311] Figure 37 This is a schematic diagram of an electronic device according to various embodiments of the present disclosure.

[0312] refer to Figure 37 The various electronic devices that apply to the display device 10 according to the embodiments of the present disclosure may include not only image display electronic devices such as smartphones 10_1a, tablet PCs 10_1b, laptop computers 10_1c, TVs 10_1d, and desktop monitors 10_1e, but also wearable electronic devices including display modules such as smart glasses 10_2a, head-mounted displays 10_2b, and smartwatches 10_2c, as well as vehicle electronic devices 10_3 including display modules such as central information displays (CIDs) and interior mirror displays arranged on the dashboard, center console, and instrument panel of a car.

[0313] In concluding this detailed description, those skilled in the art will understand that many variations and modifications can be made to the preferred embodiments without substantially departing from the principles of this disclosure. Therefore, the preferred embodiments disclosed herein are used only in a general and descriptive sense and are not intended to be limiting.

Claims

1. A display device, comprising: A light-emitting element layer is disposed on the substrate; A thin-film encapsulation layer is disposed on the light-emitting element layer; Regarding the substrate, facing the substrate; A color filter layer is disposed on the surface of the substrate and defines a light-blocking area and a plurality of light-transmitting areas; A wavelength conversion layer is disposed on the color filter layer; as well as A filler layer is disposed between the wavelength conversion layer and the thin-film encapsulation layer. The wavelength conversion layer includes: The embankment overlaps with the light-blocking area; Multiple light-transmitting components are disposed between and spaced apart from each other in the various sections of the embankment; and Organic layers, spaced apart from each other and covering the light-transmitting member, wherein the embankment is located between the organic layers, and The lower surface of the organic layer and the lower surface of the embankment are disposed in the same layer.

2. The display device according to claim 1, wherein, The embankment and the organic layer are in contact with the filling layer.

3. The display device according to claim 1, wherein, The organic layer overlaps with the light-transmitting area but does not overlap with the light-blocking area.

4. The display device according to claim 1, wherein, The refractive index of each organic layer in the organic layer is below 1.

7.

5. The display device according to claim 1, wherein, The dike is non-drainable.

6. The display device according to claim 1, further comprising: The first capping layer overlaps with the organic layer and the dike.

7. The display device according to claim 6, wherein, The upper surface of the organic layer contacts the light-transmitting member, and the lower surface of the organic layer contacts the first cover layer.

8. The display device according to claim 6, wherein, The first capping layer is formed to be flat.

9. The display device according to claim 6, further comprising: A second cover layer is disposed between the light-transmitting member and the organic layer and covers the light-transmitting member.

10. The display device according to claim 6, further comprising: The third cover layers are spaced apart from each other and extend along the side surface of the dike, wherein the dike is disposed between the third cover layers.

11. The display device according to claim 10, wherein, The organic layer is surrounded by the first capping layer and the third capping layer.

12. The display device according to claim 1, further comprising: A first cover layer is disposed between the light-transmitting member and the organic layer and covers the light-transmitting member.

13. The display device according to claim 12, wherein, The first capping layer is provided as a plurality of first capping layers spaced apart from each other and extending along the side surface of the dike, wherein the dike is located between the plurality of first capping layers.

14. A method of manufacturing a display device, the method comprising: A dam is formed on the first substrate; A hydrophobic layer is formed on the upper surface of the dike by performing an ashing process and a plasma process on the dike. Multiple light-transmitting components are formed between the various parts of the embankment; An organic material layer is formed on the dike, the hydrophobic layer, and the light-transmitting component; An organic layer is formed by removing a portion of the organic material layer and the hydrophobic layer; A filling layer is formed on the embankment and the organic layer; as well as The first substrate is bonded to a second substrate facing the first substrate.

15. The method of claim 14, wherein The ashing process is a plasma treatment process that uses Ar, N2, He, or O2 gas, or a mixture thereof, as the reactant gas. The plasma process uses CF4 gas.

16. The method of claim 14, further comprising: Prior to the formation of the organic material layer, a first capping layer is formed on the dike, the hydrophobic layer, and the light-transmitting member, wherein a portion of the first capping layer is removed while a portion of the organic material layer and the hydrophobic layer are removed.

17. The method of claim 16, further comprising: Prior to the formation of the filling layer, a second capping layer is formed on the dike, the first capping layer, and the organic layer.

18. The method of claim 14, further comprising: Prior to the formation of the dam, a color filter layer is formed on the first substrate. The second substrate includes a light-emitting element layer containing multiple light-emitting elements and a thin-film encapsulation layer formed on the light-emitting element layer. The embankment is formed on the color filter layer.

19. The method of claim 14, further comprising: Prior to the formation of the dam, a color filter layer is formed on the second substrate. The first substrate includes a light-emitting element layer containing multiple light-emitting elements and a thin-film encapsulation layer formed on the light-emitting element layer. The dam is formed on the thin film encapsulation layer.

20. An electronic device comprising: The display device according to any one of claims 1 to 13 provides an image; The processor provides image data signals to the display device; Memory, which stores data information used for operations; as well as The power module generates electricity.

Images