Display panel and display device
By setting an optical enhancement structure in the OLED display panel to adjust the length of the optical microcavity and reflect the display light, the problem of low light emission efficiency of the light-emitting device is solved, the brightness and color deviation of the display panel are improved, and the display quality is enhanced.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- YUNGU GUAN TECH CO LTD
- Filing Date
- 2026-01-30
- Publication Date
- 2026-05-05
AI Technical Summary
The low light emission efficiency of the light-emitting devices in OLED display panels affects the display quality, including brightness and color deviation.
A first optical enhancement structure is set in the first electrode in the display panel to adjust the optical microcavity length of the light-emitting device, and a second optical enhancement structure is set on the side wall of the pixel opening to reflect or refract the display light propagating in the horizontal direction, so as to improve the light emission efficiency of the light-emitting device at the positive viewing angle.
It improves the light emission efficiency of the light-emitting device at the front viewing angle, improves the brightness and color deviation of the display panel, and enhances the display quality.
Smart Images

Figure CN121985686A_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of display technology, and in particular to a display panel and display device. Background Technology
[0002] OLED (Organic Light Emitting Diode) display panels are one of the hottest topics in the field of display panel research today. OLED display panels have advantages such as low energy consumption, low cost, self-emissiveness, wide viewing angle and fast response speed.
[0003] However, the light-emitting devices in OLED display panels have a problem with low light extraction efficiency in related technologies. Summary of the Invention
[0004] Therefore, it is necessary to provide a display panel and display device to address the problem of low light emission efficiency of the light-emitting devices in OLED display panels in related technologies.
[0005] According to a first aspect of this application, a display panel is provided, comprising:
[0006] Base;
[0007] Multiple first electrodes are disposed at intervals on one side of the substrate;
[0008] A pixel definition layer includes a pixel definition structure and a plurality of pixel openings surrounding the pixel definition structure, the pixel openings exposing the corresponding first electrode;
[0009] Multiple first optical enhancement structures and / or multiple second optical enhancement structures, wherein the first optical enhancement structures are disposed within the first electrode and the second optical enhancement structures are disposed on the sidewall of the pixel opening.
[0010] In some embodiments, both the first optical enhancement structure and the second optical enhancement structure are insulating structures, and both include alternating layers of a first optical film and a second optical film, wherein the refractive index of the first optical film is greater than the refractive index of the second optical film.
[0011] Optionally, the material of the first optical film layer includes silicon oxide, and the material of the second optical film layer includes at least one of silicon nitride, titanium oxide, zirconium oxide, and niobium oxide.
[0012] In some embodiments, the display panel includes a plurality of the first optical enhancement structures;
[0013] The first electrode includes a first sub-conductive layer and a second sub-conductive layer, the first optical enhancement structure is disposed between the first sub-conductive layer and the second sub-conductive layer, and the second sub-conductive layer is located on the side of the first sub-conductive layer away from the substrate;
[0014] Optionally, the first sub-conductive layer comprises a transparent material;
[0015] Optionally, the second sub-conductive layer comprises a transparent material;
[0016] Optionally, the first optical enhancement structure covers at least a portion of the sidewalls of the first sub-conductive layer and extends in a direction parallel to the plane of the substrate to between two adjacent first sub-conductive layers; the two adjacent first optical enhancement structures are spaced apart or connected.
[0017] In some embodiments, the first electrode includes a third sub-conductive layer disposed between the first sub-conductive layer and the second sub-conductive layer.
[0018] In some embodiments, the third sub-conductive layer is disposed between the first sub-conductive layer and the first optical enhancement structure;
[0019] Optionally, the material of the third sub-conductive layer includes a reflective metal.
[0020] In some embodiments, the second sub-conductive layer is electrically connected to the first sub-conductive layer;
[0021] Optionally, the second sub-conductive layer is electrically connected to the first sub-conductive layer through a via in the first optical enhancement structure;
[0022] Optionally, the second sub-conductive layer covers a portion of the sidewall of the first optical enhancement structure to electrically connect the first sub-conductive layer.
[0023] In some embodiments, a plurality of light-emitting devices are included, wherein the light-emitting devices include a first electrode, a light-emitting functional layer and a second electrode that are sequentially stacked in a direction perpendicular to the plane of the substrate;
[0024] The plurality of light-emitting devices include a first color light-emitting device and a second color light-emitting device, wherein the first color light-emitting device and the second color light-emitting device emit light of different colors;
[0025] The thickness of the first optical enhancement structure in the first electrode of the first color light-emitting device is different from the thickness in the first electrode of the second color light-emitting device.
[0026] Optionally, the plurality of light-emitting devices further include a third color light-emitting device, wherein the first color light-emitting device, the second color light-emitting device, and the third color light-emitting device all emit light of different colors;
[0027] The thickness of the first optical enhancement structure in the first electrode of the first color light-emitting device, the thickness in the first electrode of the second color light-emitting device, and the thickness in the first electrode of the third color light-emitting device are all different.
[0028] In some embodiments, the first color light-emitting device, the second color light-emitting device, and the third color light-emitting device are different from red light-emitting devices, green light-emitting devices, and blue light-emitting devices, respectively;
[0029] The thickness of the first optical enhancement structure in the first electrode of the red light-emitting device is greater than the thickness in the first electrode of the green light-emitting device.
[0030] Optionally, the thickness of the first optical enhancement structure in the first electrode of the green light-emitting device is greater than the thickness in the first electrode of the blue light-emitting device.
[0031] In some embodiments, the display panel includes a plurality of the second optical enhancement structures;
[0032] The orthographic projection of the second optical enhancement structure onto the substrate, and the orthographic projection of the bottom wall surrounding the corresponding pixel opening onto the substrate.
[0033] According to a second aspect of this application, a display device is provided, comprising the display panel described in any one of the above-described embodiments.
[0034] In the embodiments of this application, firstly, in some implementations, by setting a first optical enhancement structure within the first electrode, the first optical enhancement structure functions to adjust the optical microcavity length of the light-emitting device, thereby better matching the optical microcavity length of the light-emitting device with the wavelength of the light emitted by the corresponding light-emitting device. This improves the light emission efficiency of the light-emitting device at the forward viewing angle, reduces color shift in the display panel, and enhances display quality such as brightness and color shift. Secondly, in some implementations, by setting a second optical enhancement structure on the sidewall of the pixel opening, the second optical enhancement structure can reflect and / or refract horizontally propagating display light, causing more display light to tend to exit at the forward viewing angle. This improves the light emission efficiency of the light-emitting device at the forward viewing angle and enhances display quality such as brightness in the display panel. Attached Figure Description
[0035] To more clearly illustrate the technical solutions in the embodiments or exemplary embodiments of this application, the drawings used in the description of the embodiments or exemplary embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0036] Figure 1 This is a schematic diagram of a first partial cross-sectional structure of a display panel provided for some embodiments of this application.
[0037] Figure 2 This is a schematic diagram of a second partial cross-sectional structure of a display panel provided for some embodiments of this application.
[0038] Figure 3 This is a schematic diagram of a third partial cross-sectional structure of a display panel provided in some embodiments of this application.
[0039] Figure 4 This is a detailed cross-sectional structural diagram of a display panel with multiple light-emitting devices provided for some embodiments of this application.
[0040] Figure 5 This is a schematic diagram of a fourth partial cross-sectional structure of a display panel provided in some embodiments of this application.
[0041] Figure 6 This is a fifth partial cross-sectional structural diagram of a display panel provided for some embodiments of this application.
[0042] Figure 7 A schematic diagram of a first verification result for some specific embodiments provided in this application.
[0043] Figure 8 A schematic diagram illustrating a second verification result for some specific embodiments provided in this application.
[0044] Figure 9 This is a sixth partial cross-sectional structural diagram of a display panel provided for some embodiments of this application.
[0045] Figure 10 This is a schematic diagram of a seventh partial cross-sectional structure of a display panel provided for some embodiments of this application.
[0046] Figure 11 This is an eighth partial cross-sectional structural diagram of a display panel provided for some embodiments of this application.
[0047] Figure 12 This is a schematic diagram of a display device 200 provided for some embodiments of this application.
[0048] Reference numerals: Display panel 100; Display device 200; Substrate 11; First electrode 13; Pixel definition layer 14; First optical enhancement structure 51; Second optical enhancement structure 52; Pixel definition structure 141; Pixel aperture 142; Array composite layer 12; First optical film layer 511; Second optical film layer 512;
[0049] Light-emitting device 123; display light XG1; first sub-conductive layer 131; second sub-conductive layer 132; third sub-conductive layer 133; first via 51K; first edge 51B; light-emitting functional layer 21; second electrode 22; first color light-emitting device 13R; second color light-emitting device 13G; third color light-emitting device 13B. Detailed Implementation
[0050] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.
[0051] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0052] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0053] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0054] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0055] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.
[0056] In related technologies, the light-emitting devices of OLED display panels have the problem of low light extraction efficiency.
[0057] In order to solve the problem of low light extraction efficiency of light-emitting devices and improve the display quality such as brightness of display panels, this application provides a display panel and display device, which aims to improve the display quality of the display panel.
[0058] Please see Figures 1 to 11 , Figure 1 This is a schematic diagram of a first partial cross-sectional structure of a display panel provided for some embodiments of this application. Figure 2 This is a schematic diagram of a second partial cross-sectional structure of a display panel provided for some embodiments of this application. Figure 3 This is a schematic diagram of a third partial cross-sectional structure of a display panel provided in some embodiments of this application.
[0059] Figure 4This is a detailed cross-sectional structural diagram of a display panel with multiple light-emitting devices provided for some embodiments of this application.
[0060] Figure 5 This is a schematic diagram of a fourth partial cross-sectional structure of a display panel provided in some embodiments of this application. Figure 6 This is a fifth partial cross-sectional structural diagram of a display panel provided for some embodiments of this application. Figure 7 A schematic diagram of a first verification result for some specific embodiments provided in this application. Figure 8 A schematic diagram illustrating a second verification result for some specific embodiments provided in this application.
[0061] Figure 9 This is a sixth partial cross-sectional structural diagram of a display panel provided for some embodiments of this application. Figure 10 This is a schematic diagram of a seventh partial cross-sectional structure of a display panel provided for some embodiments of this application. Figure 11 This is an eighth partial cross-sectional structural diagram of a display panel provided for some embodiments of this application. Figure 9 and Figure 10 by Figure 1 The first optical enhancement structure 51 is illustrated by an example. Figure 11 by Figure 2 The first optical enhancement structure 51 is illustrated by an example.
[0062] Firstly, please refer to Figures 1 to 6 This application provides a display panel 100, which includes a substrate 11, a plurality of first electrodes 13, a pixel definition layer 14, and a plurality of first optical enhancement structures 51 and / or a plurality of second optical enhancement structures 52. The plurality of first electrodes 13 are spaced apart on one side of the substrate 11; the pixel definition layer 14 includes pixel definition structures 141 and a plurality of pixel openings 142 surrounded by the pixel definition structures 141, the pixel openings 142 exposing corresponding first electrodes 13; the first optical enhancement structures 51 are disposed within the first electrodes 13, and the second optical enhancement structures are disposed on the sidewalls of the pixel openings 142.
[0063] For example, in some embodiments, the display panel 100 includes a substrate 11 and an array composite layer 12 disposed on one side of the substrate 11. The film structure of the array composite layer 12 may include a film layer containing multiple transistors and multiple drive lines in multiple driving circuits. In some embodiments, multiple light-emitting devices 123 are disposed on the side of the array composite layer 12 away from the substrate 11. The light-emitting device 123 includes a first electrode 13.
[0064] For example, the pixel opening 142 exposes at least a portion of the corresponding first electrode 13.
[0065] For example, in some implementations, such as Figures 1 to 4 As shown, the first optical enhancement structure 51 is disposed within the corresponding first electrode 13. The first optical enhancement structure 51 serves to adjust the optical microcavity length of the light-emitting device 123 (the distance between the surface of the second electrode 22 away from the substrate 11 and the surface of the first electrode 13 close to the substrate 11), so that the optical microcavity length of the light-emitting device 123 is better matched with the wavelength of the light emitted by the corresponding light-emitting device 123, thereby improving the light extraction efficiency (or luminous efficiency) of the light-emitting device. The inventors have found that by setting the first optical enhancement structure 51, the color deviation can also be improved. Therefore, by setting the first optical enhancement structure 51 within the first electrode 13, the light extraction efficiency of the light-emitting device 123 is improved, and the display quality of the display panel 100, such as brightness and color deviation, is improved.
[0066] For example, in some other implementations, such as Figure 5 As shown, the second optical enhancement structure 52 is disposed on the sidewall of the corresponding pixel opening 142. The second optical enhancement structure 52 can reflect or / and refract the display light XG1 propagating in the horizontal direction, so that more display light XG1 tends to be emitted at the positive viewing angle, thereby improving the light emission efficiency (or luminous efficiency) of the light-emitting device. Therefore, by disposing the second optical enhancement structure 52 on the sidewall of the pixel opening 142, the light emission efficiency of the light-emitting device is improved, and the display quality such as the brightness of the display panel is improved.
[0067] For example, in some other implementations, such as Figure 6 As shown, the first optical enhancement structure 51 is disposed inside the first electrode 13, while the second optical enhancement structure 52 is disposed on the side wall of the pixel opening 142. The first optical enhancement structure 51 and the second optical enhancement structure 52 can better improve the light emission efficiency of the light-emitting device and improve the display quality such as brightness and color deviation of the display panel.
[0068] In the embodiments of this application, firstly, in some implementations, by setting a first optical enhancement structure 51 within the first electrode 13, the first optical enhancement structure 51 functions to adjust the optical microcavity length of the light-emitting device 123, so that the optical microcavity length of the light-emitting device 123 is better matched with the wavelength of the light emitted by the corresponding light-emitting device 123, thereby improving the light emission efficiency of the light-emitting device at the forward viewing angle, improving the color shift of the display panel, and improving the display quality such as brightness and color shift of the display panel. Secondly, in some implementations, by setting a second optical enhancement structure 52 on the sidewall of the pixel opening 142, the second optical enhancement structure 52 can reflect and / or refract the horizontally propagating display light XG1, so that more display light XG1 tends to be emitted at the forward viewing angle, thereby improving the light emission efficiency of the light-emitting device at the forward viewing angle and improving the display quality such as brightness of the display panel.
[0069] In some implementations, such as Figure 4 As shown, both the first optical enhancement structure 51 and the second optical enhancement structure 52 are insulating structures, and both include a first optical film layer 511 and a second optical film layer 512 that are stacked and alternately arranged. The refractive index of the first optical film layer 511 is greater than the refractive index of the second optical film layer 512.
[0070] For example, the refractive index of the first optical film layer 511 is greater than that of the second optical film layer 512. The first optical film layer 511 and the second optical film layer 512, arranged in alternating layers, form both the first optical enhancement structure 51 and the second optical enhancement structure 52, which are insulating structures. On one hand, since the first optical film layer 511 and the second optical film layer 512 are inorganic materials, the first optical enhancement structure 51 and the second optical enhancement structure 52 can be patterned using a dry etching process. Compared to wet etching, smaller sizes of the first optical enhancement structure 51 and the second optical enhancement structure 52 can be fabricated, which is beneficial for improving the resolution of the display panel and is suitable for silicon-based OLED display panels. On the other hand, by setting the number of alternating layers of the first optical film layer 511 and the second optical film layer 512, first optical enhancement structures 51 of different thicknesses can be fabricated in light-emitting devices of different colors, thereby improving the light extraction efficiency of light-emitting devices of different colors.
[0071] For example, in the first optical enhancement structure 51, the first optical film layer 511 and the second optical film layer 512 are stacked alternately in a direction perpendicular to the plane of the substrate 11. In the second optical enhancement structure 52, the first optical film layer 511 and the second optical film layer 512 are stacked alternately in a direction perpendicular to the sidewall of the pixel opening 142.
[0072] Optionally, in some embodiments, the material of the first optical film layer 511 includes silicon oxide, and the material of the second optical film layer 512 includes at least one of silicon nitride, titanium oxide, zirconium oxide, and niobium oxide.
[0073] In some embodiments, the display panel includes a plurality of first optical enhancement structures 51; the first electrode 13 includes a first sub-conductive layer 131 and a second sub-conductive layer 132, the first optical enhancement structure 51 is disposed between the first sub-conductive layer 131 and the second sub-conductive layer 132, and the second sub-conductive layer 132 is located on the side of the first sub-conductive layer 131 away from the substrate 11.
[0074] For example, the first optical enhancement structure 51 is disposed between the first sub-conductive layer 131 and the second sub-conductive layer 132. The second sub-conductive layer 132 can contact the light-emitting functional layer 21, so that the first optical enhancement structure 51 will not affect the impedance of the light-emitting device 123, and the first optical enhancement structure 51 will not have a negative impact on the light-emitting efficiency of the light-emitting device 123.
[0075] Optionally, in some embodiments, the first sub-conductive layer 131 comprises a transparent material.
[0076] Optionally, in some embodiments, the second sub-conductive layer 132 comprises a transparent material.
[0077] For example, the materials of the first sub-conductive layer 131 and the second sub-conductive layer 132 may both include indium tin oxide (ITO).
[0078] Alternatively, in some implementations, such as Figure 9 ,or Figure 10 ,or Figure 11 As shown, the first optical enhancement structure 51 covers at least a portion of the sidewalls of the first sub-conductive layer 131 and extends in a direction parallel to the plane of the substrate 11 to between two adjacent first sub-conductive layers 131; the two adjacent first optical enhancement structures 51 are spaced apart or connected.
[0079] For example, such as Figure 9 As shown, in some embodiments, the first optical enhancement structure 51 covers a portion of the sidewall of the first sub-conductive layer 131 and extends in a direction parallel to the plane of the substrate 11 to between two adjacent first sub-conductive layers 131; the two adjacent first optical enhancement structures 51 are spaced apart. In a direction parallel to the plane of the substrate 11, the first optical enhancement structure 51 extends to between two adjacent first sub-conductive layers 131 and is spaced apart between two adjacent first sub-conductive layers 131.
[0080] For example, such as Figure 10As shown, in some embodiments, the first optical enhancement structure 51 covers at least a portion of the sidewalls of the first sub-conductive layer 131 and extends in a direction parallel to the plane of the substrate 11 to between two adjacent first sub-conductive layers 131; two adjacent first optical enhancement structures 51 are connected. In a direction parallel to the plane of the substrate 11, the first optical enhancement structure 51 extends to between two adjacent first sub-conductive layers 131 and is connected between two adjacent first sub-conductive layers 131.
[0081] For example, such as Figure 11 As shown, in some embodiments, a first optical enhancement structure 51 covers a portion of the sidewall of a first sub-conductive layer 131 and extends in a direction parallel to the plane of the substrate 11 between two adjacent first sub-conductive layers 131; adjacent first optical enhancement structures 51 are spaced apart. A portion of the first optical enhancement structure 51 extends between two adjacent first sub-conductive layers 131. For example, a second sub-conductive layer 132 covers a portion of the sidewall of the first optical enhancement structure 51 to electrically connect the first sub-conductive layer 131; the first optical enhancement structure 51 covers at least a portion of the sidewall of other portions of the first sub-conductive layer 131 and extends in a direction parallel to the plane of the substrate 11 between two adjacent first sub-conductive layers 131.
[0082] For example, such as Figure 9 ,or Figure 10 ,or Figure 11 As shown, a portion of the first optical enhancement structure 51 between two adjacent first sub-conductive layers 131 can reflect ambient light, reducing the amount of ambient light entering the array composite layer 12 and preventing a decrease in the reliability of the driving circuit due to ambient light irradiation. Simultaneously, the first optical enhancement structure 51 covers a portion of the sidewall of the first sub-conductive layer 131, protecting the sidewall of the first sub-conductive layer 131 during the step-by-step fabrication (step-by-step etching) process of each sub-film layer in the first electrode 13, when etching to form the second sub-conductive layer 132. In some embodiments, such as... Figure 3 As shown, the first electrode 13 includes a third sub-conductive layer 133, which is disposed between the first sub-conductive layer 131 and the second sub-conductive layer 132.
[0083] For example, in some prior art, the first electrode 13 is composed of a first sub-conductive layer 131, a second sub-conductive layer 132 and a third sub-conductive layer 133. Adding a first optical enhancement structure 51 to the first electrode 13 to adjust the length of the optical microcavity can improve the light extraction efficiency (or luminous efficiency) of the light-emitting device 123 without negatively affecting other performance of the light-emitting device 123.
[0084] In some implementations, such as Figure 3As shown, the third sub-conductive layer 133 is disposed between the first sub-conductive layer 131 and the first optical enhancement structure 51.
[0085] Alternatively, in some implementations, such as Figure 3 As shown, the material of the third sub-conductive layer 133 includes a reflective metal.
[0086] For example, the material of the third sub-conductive layer 133 includes a reflective metal, such as silver or aluminum.
[0087] It should be noted that when the first electrode does not include the third sub-conductive layer 133, or when the third sub-conductive layer 133 includes a transparent material, the optical microcavity length of the light-emitting device 123 refers to the distance between the surface of the second electrode 22 away from the substrate 11 and the surface of the first electrode 13 close to the substrate 11.
[0088] It should be noted that when the first electrode includes a third sub-conductive layer 133 and the third sub-conductive layer 133 is a reflective metal, the optical microcavity length of the light-emitting device 123 refers to the distance between the surface of the second electrode 22 away from the substrate 11 and the surface of the third sub-conductive layer 133 away from the substrate 11.
[0089] For example, the material of the third sub-conductive layer 133 includes reflective metal. The third sub-conductive layer 133 is disposed between the first sub-conductive layer 131 and the first optical enhancement structure 51, so that the first optical enhancement structure 51 can participate in adjusting the length of the optical microcavity and prevent the display light XG1 from being completely reflected by the third sub-conductive layer 133 before entering the first optical enhancement structure 51.
[0090] For example, such as Figure 3 As shown, and in combination Figure 9 ,or Figure 10 ,or Figure 11 As shown, in some embodiments, the first optical enhancement structure 51 can cover part of the sidewalls of the first sub-conductive layer 131 and part of the sidewalls of the third sub-conductive layer 133. In the process of step-by-step manufacturing (step-by-step etching to form) each sub-film layer in the first electrode 13, the sidewalls of the first sub-conductive layer 131 and the third sub-conductive layer 133 can be protected when the second sub-conductive layer 132 is etched to form.
[0091] It should be noted that in some implementation methods, such as Figures 1 to 4As shown, the first electrode 13 includes only the first sub-conductive layer 131 and the second sub-conductive layer 132, excluding the third sub-conductive layer 133. The first optical enhancement structure 51 not only adjusts the optical microcavity length of the light-emitting device, but also reflects the display light XG1 to the second electrode 22, replacing the reflective metal. Firstly, reducing the size of the third sub-conductive layer 133 simplifies the manufacturing process. Secondly, wet etching of reflective metals such as Ag makes it difficult to achieve ultra-high PPI pixel electrodes. The first optical enhancement structure 51 replaces the reflective metal. The first optical film layer 511 and the second optical film layer 512 are inorganic materials, and the first optical enhancement structure 51 can be patterned using a dry etching process, improving the resolution of the display panel and making it suitable for silicon-based OLED display panels. Thirdly, reflective metals such as Ag cause significant pollution in semiconductor manufacturing processes; the first optical enhancement structure 51 replaces the reflective metal, reducing environmental pollution.
[0092] In some implementations, such as Figures 1 to 3 As shown, the second sub-conductive layer 132 is electrically connected to the first sub-conductive layer 131.
[0093] For example, such as Figures 1 to 3 As shown, the second sub-conductive layer 132 is electrically connected to the first sub-conductive layer 131. This does not change the original design of the second sub-conductive layer 132 being electrically connected to the first sub-conductive layer 131, thus avoiding an increase in the impedance of the light-emitting device 123 and avoiding negative effects from the first optical enhancement structure 51.
[0094] Alternatively, in some implementations, such as Figure 1 As shown, the second sub-conductive layer 132 is electrically connected to the first sub-conductive layer 131 through a via in the first optical enhancement structure 51.
[0095] For example, when the first optical enhancement structure 51 is patterned, vias in the first optical enhancement structure 51 are simultaneously patterned. Figure 1 The first via 51K is provided so that the second sub-conductive layer 132 is electrically connected to the first sub-conductive layer 131 through the via in the first optical enhancement structure 51.
[0096] It should be noted that, as Figure 3 As shown, when the light-emitting device 123 further includes a third sub-conductive layer 133, the second sub-conductive layer 132 is connected to the third sub-conductive layer 133 through a via in the first optical enhancement structure 51, and the third sub-conductive layer 133 directly contacts the first sub-conductive layer 131.
[0097] Alternatively, in some implementations, such as Figure 2As shown, the second sub-conductive layer 132 covers a portion of the sidewall of the first optical enhancement structure 51 to electrically connect the first sub-conductive layer 131.
[0098] For example, when patterning the first optical enhancement structure 51, the edges of a portion of the first optical enhancement structure 51 are simultaneously made ( Figure 2 The first edge 51B is recessed relative to the edge of the first sub-conductive layer 131. When forming the second sub-conductive layer 132, the second sub-conductive layer 132 directly covers the sidewall of the recessed portion of the first optical enhancement structure 51, and the second sub-conductive layer 132 directly overlaps the first sub-conductive layer 131.
[0099] It should be noted that when the light-emitting device 123 also includes a third sub-conductive layer 133, the second sub-conductive layer 132 covers part of the sidewall of the first optical enhancement structure 51 to connect the third sub-conductive layer 133, and the third sub-conductive layer 133 directly contacts the first sub-conductive layer 131.
[0100] In some implementations, such as Figure 4 As shown, the display panel 100 includes a plurality of light-emitting devices 123. Each light-emitting device 123 includes a first electrode 13, a light-emitting functional layer 21, and a second electrode 22, which are sequentially stacked in a direction perpendicular to the plane of the substrate 11. The plurality of light-emitting devices 123 include a first color light-emitting device 13R and a second color light-emitting device 13G, which emit light of different colors. The thickness of the first optical enhancement structure 51 in the first electrode 13 of the first color light-emitting device 13R is different from the thickness in the first electrode 13 of the second color light-emitting device 13G.
[0101] Optionally, the plurality of light-emitting devices 123 may also include a third color light-emitting device 13B, wherein the first color light-emitting device 13R, the second color light-emitting device 13G, and the third color light-emitting device 13B all emit light of different colors; the thickness of the first optical enhancement structure 51 in the first electrode 13 of the first color light-emitting device 13R, the first electrode 13 of the second color light-emitting device 13G, and the first electrode 13 of the third color light-emitting device 13B are all different.
[0102] For example, the plurality of light-emitting devices 123 include a first-color light-emitting device 13R, a second-color light-emitting device 13G, and a third-color light-emitting device 13B.
[0103] For example, the first electrode 13 can be one of the anode and the cathode, and the second electrode 22 can be the other of the anode and the cathode. Figures 1 to 6 The example uses the first electrode 13 as the anode and the second electrode 22 as the cathode.
[0104] For example, the light-emitting functional layer 21 may include an emission layer (EML), and the light-emitting functional layer 21 may also include other film layers besides the emission layer (EML), such as one or more of a hole injection layer (HIL), a hole transport layer (HTL), an electron injection layer (EIL), an electron transport layer (ETL), a hole block layer (HBL), and an electron block layer (EBL).
[0105] For example, the first color light-emitting device 13R, the second color light-emitting device 13G, and the third color light-emitting device 13B all emit light of different colors. The thickness of the first optical enhancement structure 51 in the first electrode 13 of the first color light-emitting device 13R, the first electrode 13 of the second color light-emitting device 13G, and the first electrode 13 of the third color light-emitting device 13B are all different. That is, the thickness of the first optical enhancement structure 51 is different in the different color light-emitting devices 123. This allows the length of the optical microcavity in the different color light-emitting devices 123 to match the color of the light emitted, thereby improving the light extraction efficiency (or luminous efficiency) of the different color light-emitting devices 123.
[0106] In some implementations, such as Figure 4 As shown, the first color light-emitting device 13R, the second color light-emitting device 13G, and the third color light-emitting device 13B are different from the red light-emitting device, the green light-emitting device, and the blue light-emitting device, respectively; the thickness of the first optical enhancement structure 51 in the first electrode 13 of the red light-emitting device is greater than the thickness in the first electrode 13 of the green light-emitting device.
[0107] Alternatively, in some implementations, such as Figure 4 As shown, the thickness of the first optical enhancement structure 51 in the first electrode 13 of the green light-emitting device is greater than the thickness in the first electrode 13 of the blue light-emitting device.
[0108] For example, the thickness of the first optical enhancement structure 51 in the red light-emitting device is greater than that in the green light-emitting device; the thickness of the first optical enhancement structure 51 in the green light-emitting device is greater than that in the blue light-emitting device, so that the length of the optical microcavity in the light-emitting devices 123 of different colors can be matched with the color of the light emitted, thereby improving the light extraction efficiency (or luminous efficiency) of the light-emitting devices 123 of different colors.
[0109] It should be noted that, in Figure 4 In this context, the thickness of the first optical enhancement structure 51 refers to the thickness of the first optical enhancement structure 51 in the direction perpendicular to the plane of the substrate 11.
[0110] It should be noted that, in Figure 4 The diagram illustrates that the thickness of the first optical enhancement structure 51 in the light-emitting devices 123 of different colors varies. Figure 4 Examples are given of first optical enhancement structures 51 with different thicknesses formed by different numbers of first optical film layers 511 and second optical film layers 512.
[0111] Please see Figure 5 and Figure 6 .
[0112] In some implementations, such as Figure 5 and Figure 6 As shown, the display panel includes a plurality of second optical enhancement structures 52; the orthographic projection of the second optical enhancement structure 52 on the substrate 11 and the orthographic projection of the bottom wall surrounding the corresponding pixel opening 142 on the substrate 11.
[0113] For example, the orthographic projection of the second optical enhancement structure 52 on the substrate 11 surrounds the orthographic projection of the bottom wall of the corresponding pixel opening 142 on the substrate 11. For example, the orthographic projection of the first optical enhancement structure 51 on the substrate 11 is ring-shaped, and the orthographic projection of the first optical enhancement structure 51 on the substrate 11 surrounds the orthographic projection of the bottom wall of the corresponding pixel opening 142 on the substrate 11. The horizontally emitted display light XG1 can be reflected or refracted from various side directions, thereby improving the light emission efficiency of the light-emitting device 123.
[0114] Please refer to Table 1. Figure 7 and Figure 8 Table 1 illustrates the verification conditions for some specific embodiments provided in this application. Figure 7 A schematic diagram of a first verification result for some specific embodiments provided in this application. Figure 8 A schematic diagram illustrating a second verification result for some specific embodiments provided in this application.
[0115] The inventors verified the comparative example Base. The structure of the first electrode 13 of the comparative example Base is that ITO / Ag / ITO are stacked sequentially on the substrate 11, and the thickness of Ag is 100 nanometers. In the verification results, the brightness at the normal viewing angle (0 degrees) is 100% (the brightness of other specific embodiments is compared with the brightness of the comparative example Base at the normal viewing angle). The brightness at the oblique viewing angle (40 degrees) is 37% (the brightness of the comparative example Base at the oblique viewing angle is 37% of the brightness of the comparative example Base at the normal viewing angle).
[0116] The inventors verified the specific embodiment DOE1. The structure of the first electrode 13 of the specific embodiment DOE1 is that ITO / SiOx / SiNx… / ITO are stacked sequentially on the substrate 11. The first electrode 13 does not include the third sub-conductive layer 133. In the verification results, the brightness at the normal viewing angle (0 degrees) is 110%, and the brightness at the oblique viewing angle (40 degrees) is 20% (the oblique viewing angle brightness of the specific embodiment DOE1 is 20% of the normal viewing angle brightness of the comparative example Base).
[0117] The inventors verified the specific embodiment DOE2. The structure of the first electrode 13 of the specific embodiment DOE2 is that ITO / Ag / SiOx / SiNx… / ITO are stacked sequentially on the substrate 11. The first electrode 13 includes a third sub-conductive layer 133 (Ag), the thickness of Ag is 100 nanometers. In the verification results, the brightness at a normal viewing angle (0 degrees) is 124%, and the brightness at an oblique viewing angle (40 degrees) is 22%.
[0118] The inventors verified the specific embodiment DOE3. The structure of the first electrode 13 of the specific embodiment DOE3 is that ITO / Ag / SiOx / SiNx… / ITO are stacked sequentially on the substrate 11. The first electrode 13 includes a third sub-conductive layer 133 (Ag), the thickness of Ag is 20 nanometers. In the verification results, the brightness at a normal viewing angle (0 degrees) is 119%, and the brightness at an oblique viewing angle (40 degrees) is 22%.
[0119] Please refer to Table 1 and Figure 7 , Figure 7 It illustrates the characteristic of brightness changing with viewing angle. Figure 7 The horizontal axis represents the viewpoint. Figure 7 The vertical axis represents the percentage of brightness. By comparing the comparative example Base with specific embodiments DOE1 to DOE3, it is verified that: in this application, by setting the first optical enhancement structure 51 in the first electrode 13, the first optical enhancement structure 51 adjusts the optical microcavity length of the light-emitting device 123, so that the optical microcavity length of the light-emitting device 123 is better matched with the wavelength of the light emitted by the corresponding light-emitting device 123, thereby improving the light emission efficiency and brightness of the light-emitting device at the forward viewing angle.
[0120] Please refer to Table 1 and Figure 8 , Figure 8 The reflection spectrum of the light-emitting device 123 is illustrated. Figure 8 The horizontal axis represents the wavelength. Figure 8The vertical axis represents reflectivity. By comparing the comparative example Base with specific embodiments DOE1 to DOE3, this application demonstrates that by setting the first optical enhancement structure 51 within the first electrode 13, the reflected spectrum exhibits better selectivity. For example, in specific embodiment DOE1, the reflectivity in the red light band is much lower than under other conditions, thus preventing the image in specific embodiment DOE1 from exhibiting a reddish color shift.
[0121] Table 1 shows the verification results of the comparative examples and each embodiment.
[0122]
[0123] Please see Figure 12 , Figure 12 This is a schematic diagram of a display device 200 provided for some embodiments of this application.
[0124] Secondly, please refer to Figure 12 This application provides a display device 200, which includes a display panel 100 of any one of the above features, or a display panel 100 that combines any of the above features.
[0125] For example, the display device 200 may be a mobile phone, a laptop, a television, etc., but is not limited to these.
[0126] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0127] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.
Claims
1. A display panel, characterized in that, include: Base; Multiple first electrodes are disposed at intervals on one side of the substrate; A pixel definition layer includes a pixel definition structure and a plurality of pixel openings surrounding the pixel definition structure, the pixel openings exposing the corresponding first electrode; Multiple first optical enhancement structures and / or multiple second optical enhancement structures, wherein the first optical enhancement structures are disposed within the first electrode and the second optical enhancement structures are disposed on the sidewall of the pixel opening.
2. The display panel according to claim 1, characterized in that, Both the first optical enhancement structure and the second optical enhancement structure are insulating structures, and both include a first optical film layer and a second optical film layer that are stacked and alternately arranged, wherein the refractive index of the first optical film layer is greater than the refractive index of the second optical film layer; Optionally, the material of the first optical film layer includes silicon oxide, and the material of the second optical film layer includes at least one of silicon nitride, titanium oxide, zirconium oxide, and niobium oxide.
3. The display panel according to claim 1, characterized in that, The display panel includes a plurality of the first optical enhancement structures; The first electrode includes a first sub-conductive layer and a second sub-conductive layer, the first optical enhancement structure is disposed between the first sub-conductive layer and the second sub-conductive layer, and the second sub-conductive layer is located on the side of the first sub-conductive layer away from the substrate; Optionally, the first sub-conductive layer comprises a transparent material; Optionally, the second sub-conductive layer comprises a transparent material; Optionally, the first optical enhancement structure covers at least a portion of the sidewalls of the first sub-conductive layer and extends in a direction parallel to the plane of the substrate to between two adjacent first sub-conductive layers; the two adjacent first optical enhancement structures are spaced apart or connected.
4. The display panel according to claim 3, characterized in that, The first electrode includes a third sub-conductive layer, which is disposed between the first sub-conductive layer and the second sub-conductive layer.
5. The display panel according to claim 4, characterized in that, The third sub-conductive layer is disposed between the first sub-conductive layer and the first optical enhancement structure; Optionally, the material of the third sub-conductive layer includes a reflective metal.
6. The display panel according to claim 3 or 4, characterized in that, The second sub-conductive layer is electrically connected to the first sub-conductive layer; Optionally, the second sub-conductive layer is electrically connected to the first sub-conductive layer through a via in the first optical enhancement structure; Optionally, the second sub-conductive layer covers a portion of the sidewall of the first optical enhancement structure to electrically connect the first sub-conductive layer.
7. The display panel according to claim 3 or 4, characterized in that, It includes multiple light-emitting devices, each of which includes a first electrode, a light-emitting functional layer, and a second electrode that are sequentially stacked in a direction perpendicular to the plane of the substrate. The plurality of light-emitting devices include a first color light-emitting device and a second color light-emitting device, wherein the first color light-emitting device and the second color light-emitting device emit light of different colors; The thickness of the first optical enhancement structure in the first electrode of the first color light-emitting device is different from the thickness in the first electrode of the second color light-emitting device. Optionally, the plurality of light-emitting devices further include a third color light-emitting device, wherein the first color light-emitting device, the second color light-emitting device, and the third color light-emitting device all emit light of different colors; The thickness of the first optical enhancement structure in the first electrode of the first color light-emitting device, the thickness in the first electrode of the second color light-emitting device, and the thickness in the first electrode of the third color light-emitting device are all different.
8. The display panel according to claim 7, characterized in that, The first color light-emitting device, the second color light-emitting device, and the third color light-emitting device are different from red light-emitting devices, green light-emitting devices, and blue light-emitting devices, respectively; The thickness of the first optical enhancement structure in the first electrode of the red light-emitting device is greater than the thickness in the first electrode of the green light-emitting device. Optionally, the thickness of the first optical enhancement structure in the first electrode of the green light-emitting device is greater than the thickness in the first electrode of the blue light-emitting device.
9. The display panel according to claim 1, characterized in that, The display panel includes a plurality of the second optical enhancement structures; The orthographic projection of the second optical enhancement structure onto the substrate, and the orthographic projection of the bottom wall surrounding the corresponding pixel opening onto the substrate.
10. A display device, characterized in that, Includes the display panel as described in any one of claims 1 to 9.