MEMS device high-voltage driving circuit for OCS all-optical switching
By designing a high-voltage drive circuit for MEMS devices used in OCS all-optical switching, the lack of high-precision high-voltage DAC drive circuits was solved, realizing low-cost and highly flexible high-voltage drive, meeting the application requirements of high precision and high stability, and maintaining stability in complex environments.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- WUHAN YUNZHI OPTICAL LINK TECHNOLOGY CO LTD
- Filing Date
- 2026-01-20
- Publication Date
- 2026-05-08
AI Technical Summary
The lack of high-precision, high-voltage DAC driver circuits in China makes it impossible to meet the requirements of high precision and high stability in high-voltage analog signal output scenarios, and makes it difficult to achieve product miniaturization and low-cost design.
A high-voltage drive circuit for MEMS devices in OCS all-optical switching is designed, including a microcontroller module, an error amplifier module, a high-voltage current amplifier module, and a feedback module. The microcontroller provides a programmable DC voltage, the error amplifier compares the voltage difference and generates a high-voltage drive signal, the high-voltage current amplifier module performs fine-tuning and amplification, and the feedback module performs voltage division processing to finally drive the MEMS device.
It achieves low-cost, high-flexibility, and scalable high-voltage drive, can operate stably in complex electromagnetic environments, provides reliable high-voltage drive, and meets the needs of different application scenarios.
Smart Images

Figure CN122001195A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of optical communication technology, specifically a high-voltage drive circuit for MEMS devices used in OCS all-optical switching. Background Technology
[0002] In the field of optical communication technology, all-optical switching technology, as a key technology for achieving high-speed, high-capacity optical information transmission and processing, is receiving widespread attention. The Optical Circuit Switch (OCS) all-optical switching system, as a crucial component, plays a vital role in the development of the entire optical communication network through performance optimization and improvement. The core of OCS all-optical switching technology is to eliminate the photoelectric conversion stage through direct routing within the optical domain. Currently, mainstream technologies include MEMS micromirror arrays, digital liquid crystal (DLC), and piezoelectric ceramic (DLBS) solutions. MEMS (Micro-Electro-Mechanical Systems) devices, as the core components of the OCS all-optical switching system, directly impact the overall system performance through improvements in their driving technology.
[0003] In the field of high-precision high-voltage signal output, the domestic technology and product portfolio for DAC (digital-to-analog converter) driver circuits capable of stably driving 150V high voltage remains largely undeveloped. Specifically, the domestic market currently lacks core high-voltage DAC components similar to Analog Devices' AD45335. This forces domestic companies, in scenarios requiring high-voltage analog signal output (such as high-voltage sensor calibration and precision high-voltage power supply debugging), to either adopt complex solutions combining multiple components or opt for lower-precision alternative circuits. These solutions fail to meet the requirements of high precision and high stability, and also hinder miniaturization and low-cost design. Therefore, there is an urgent need in this field for a high-voltage driver circuit for MEMS devices used in OCS all-optical switching. Summary of the Invention
[0004] This invention provides a high-voltage driving circuit for MEMS devices used in OCS all-optical switching to solve the problems mentioned in the background art.
[0005] According to an embodiment of the present invention, a high-voltage driving circuit for MEMS devices used in OCS all-optical switching is provided, comprising: a microcontroller module, an error amplification module, a high-voltage current amplification module, a feedback module, and a high-voltage output module; A microcontroller module is used to provide a programmable DC voltage; The error amplification module, connected to the microcontroller module and the feedback module, is used to compare the DC voltage with the feedback voltage provided by the feedback module, compare the voltage difference between the DC voltage and the feedback voltage, and output an error signal. The high-voltage current amplification module, connected to the error amplification module, is used to connect to an external high-voltage DC source and perform voltage fine-tuning and micro-current amplification on the error signal to generate a high-voltage drive signal. The feedback module, connected to the high-voltage current amplifier module, is used to perform voltage division processing on the high-voltage drive signal and provide feedback voltage. The high-voltage output module, connected to the high-voltage current amplification module, is used to receive and output high-voltage drive signals to drive MEMS devices.
[0006] As a further embodiment of the present invention: the microcontroller module includes a microcontroller VG1; the error amplification module includes a resistor R8, a capacitor C1, a resistor R7, an operational amplifier U1, a voltage regulator J2, and a resistor R13; Preferably, the operational amplifier U1 is an OPAx196 operational amplifier. The non-inverting input of the operational amplifier U1 is connected to the positive terminal of the microcontroller VG1, and the negative terminal of the microcontroller VG1 is grounded. The power supply terminal and the ground terminal of the operational amplifier VG1 are connected to the voltage regulator J2 and the ground terminal, respectively. The inverting input of the operational amplifier U1 is connected to the first terminal of the resistor R8 and is connected to the first terminal of the resistor R7 through the capacitor C1. The second terminal of the resistor R7 is connected to the output terminal of the operational amplifier U1 and the first terminal of the resistor R13.
[0007] As a further embodiment of the present invention: resistor R7 and capacitor C1 constitute a frequency compensation network.
[0008] As a further embodiment of the present invention: the error amplification module includes transistor T2, resistor R9, resistor R10, transistor T3, resistor R2, resistor R12, high voltage DC source J1, resistor R1 and transistor T1; Preferably, the base of transistor T2 is connected to the second end of resistor R13, the emitter of transistor T2 is connected to the voltage regulator J2 through resistor R9, the collector of transistor T2 is connected to the base of transistor T3 and grounded through resistor R10, the emitter of transistor T3 is grounded, the collector of transistor T3 is connected to one end of resistor R12 and connected to the high voltage DC source J1 and one end of resistor R1 through resistor R2, the other end of resistor R1 is connected to the collector of transistor T1, and the base of transistor T1 is connected to the other end of resistor R12.
[0009] As a further aspect of the present invention, transistors T2 and T3 form a complementary push-pull structure to fine-tune the voltage of the error signal.
[0010] As a further embodiment of the present invention: transistors T1 and T3 form a common-emitter or Darlington current amplification structure to amplify small currents.
[0011] As a further embodiment of the present invention: the feedback module includes resistors R5, R3, R6 and R4; the high voltage output module includes a drive port VF1; Preferably, one end of resistor R5 is connected to the emitter of transistor T1 and the drive port VF1, and the other end of resistor R5 is connected to the second end of resistor R8, one end of resistor R4 and one end of resistor R6 through resistor R3. The other ends of resistor R4 and resistor R6 are both grounded.
[0012] Compared with existing technologies, the advantages of this invention are: the high-voltage drive circuit for MEMS devices using OCS all-optical switching is not only lower in cost but also more flexible and scalable. By adjusting the MCU control program and replacing low-voltage DACs and error amplifiers of different specifications, the precision error amplifier accurately amplifies and calibrates the analog voltage signal output by the low-voltage DAC to ensure signal accuracy and stability. The high-voltage output stage, composed of two transistors, converts the low-voltage signal into a high-voltage output under the drive of the error amplifier, achieving the goal of driving high-voltage output with low current. Furthermore, the parameters of the high-voltage output can be easily changed to meet the needs of different application scenarios. Simultaneously, this solution also possesses good anti-interference capabilities, enabling stable operation in complex electromagnetic environments and providing reliable high-voltage drive for MEMS micromirrors. Attached Figure Description
[0013] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0014] Figure 1 This is a circuit diagram of a high-voltage drive circuit for a MEMS device used in OCS all-optical switching, provided as an embodiment of the present invention.
[0015] Figure 2 The graph showing the relationship between the voltage at the drive port VF1 and the output voltage of the operational amplifier U1 and the voltage provided by the high-voltage DC source J1 is provided for embodiments of the present invention.
[0016] Figure 3 The graph showing the relationship between the voltage at the drive port VF1 and the voltage at the output terminal of the operational amplifier U1 and the temperature is provided for an embodiment of the present invention. Detailed Implementation
[0017] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0018] In one embodiment, see Figure 1 A high-voltage drive circuit for MEMS devices used in OCS all-optical switching includes: a microcontroller module, an error amplifier module, a high-voltage current amplifier module, a feedback module, and a high-voltage output module. A microcontroller module is used to provide a programmable DC voltage; The error amplification module, connected to the microcontroller module and the feedback module, is used to compare the DC voltage with the feedback voltage provided by the feedback module, compare the voltage difference between the DC voltage and the feedback voltage, and output an error signal. The high-voltage current amplification module, connected to the error amplification module, is used to connect to an external high-voltage DC source and perform voltage fine-tuning and micro-current amplification on the error signal to generate a high-voltage drive signal. The feedback module, connected to the high-voltage current amplifier module, is used to perform voltage division processing on the high-voltage drive signal and provide feedback voltage. The high-voltage output module, connected to the high-voltage current amplification module, is used to receive and output high-voltage drive signals to drive MEMS devices.
[0019] In this embodiment, please refer to Figure 1 The microcontroller module includes a microcontroller VG1; the error amplifier module includes a resistor R8, a capacitor C1, a resistor R7, an operational amplifier U1, a voltage regulator J2, and a resistor R13. Specifically, the operational amplifier U1 is an OPAx196 operational amplifier. The non-inverting input of the operational amplifier U1 is connected to the positive terminal of the microcontroller VG1, and the negative terminal of the microcontroller VG1 is grounded. The power supply terminal and the ground terminal of the operational amplifier VG1 are connected to the voltage regulator J2 and the ground terminal, respectively. The inverting input of the operational amplifier U1 is connected to the first terminal of the resistor R8 and is connected to the first terminal of the resistor R7 through the capacitor C1. The second terminal of the resistor R7 is connected to the output terminal of the operational amplifier U1 and the first terminal of the resistor R13.
[0020] Furthermore, resistor R7 and capacitor C1 constitute a frequency compensation network.
[0021] In a specific embodiment, the microcontroller VG1 can be composed of an MCU and a DAC driver. The MCU configures the DAC via SPI to output a programmable DC voltage (e.g., 0–5V). The resistor R7 and capacitor C1 form a frequency compensation network to improve closed-loop stability, prevent self-oscillation, and ensure that the system maintains a linear response over a wide frequency range. The connection point between the output terminal of the operational amplifier U1 and the second terminal of the resistor R7 can serve as a monitoring port VF2. This monitoring port VF2 corresponds to the output terminal of the operational amplifier U1. In conjunction with the drive port VF1, it can monitor the voltage relationship curves between the voltage at the drive port VF1 and the output terminal of the operational amplifier U1 and the voltage provided by the high-voltage DC source J1, as well as the temperature relationship curves between the voltage at the drive port VF1 and the output terminal of the operational amplifier U1. For details, please refer to [reference needed]. Figure 2 and Figure 3 .
[0022] Furthermore, the error amplification module includes transistor T2, resistors R9 and R10, transistor T3, resistors R2 and R12, high-voltage DC source J1, resistor R1, and transistor T1; Specifically, the base of transistor T2 is connected to the second end of resistor R13, the emitter of transistor T2 is connected to the voltage regulator J2 through resistor R9, the collector of transistor T2 is connected to the base of transistor T3 and grounded through resistor R10, the emitter of transistor T3 is grounded, the collector of transistor T3 is connected to one end of resistor R12 and connected to the high voltage DC source J1 and one end of resistor R1 through resistor R2, the other end of resistor R1 is connected to the collector of transistor T1, and the base of transistor T1 is connected to the other end of resistor R12.
[0023] Furthermore, transistors T2 and T3 form a complementary push-pull structure to fine-tune the voltage of the error signal.
[0024] Furthermore, transistors T1 and T3 form a common-emitter or Darlington current amplification structure to amplify minute currents.
[0025] In a specific embodiment, the transistor T2 is an MMBT3906LT1, and transistors T3 and T1 are both MMBTA42LT1, whose high withstand voltage (≥30V–300V) ensures reliable operation under high voltage. Transistors T2 and T3 form a complementary push-pull structure to improve the linearity and response speed of the output stage. Resistors R9 and R13 form a voltage divider network to provide bias for transistor T2, enabling it to operate in the amplification region. At the same time, they work in conjunction with transistors T1 and T3 to regulate the output voltage, suppress fluctuations caused by load or input voltage changes, compensate for voltage fluctuations during high-voltage output, and maintain output linearity. The high-voltage DC source J1 requires attention to input filtering and transient protection.
[0026] Furthermore, the feedback module includes resistors R5, R3, R6, and R4; the high-voltage output module includes a drive port VF1. Specifically, one end of resistor R5 is connected to the emitter of transistor T1 and the drive port VF1, and the other end of resistor R5 is connected to the second end of resistor R8, one end of resistor R4 and one end of resistor R6 through resistor R3. The other ends of resistor R4 and resistor R6 are both grounded.
[0027] In a specific embodiment, the resistors R5, R3, and R4 form a high-resistance voltage divider network, which proportionally reduces the high-voltage output to a low voltage range that the operational amplifier U1 can handle. The resistors R2, R12, R10, R5, R3, R4, and R6 are located in the high-voltage path and must be of high-voltage type (such as 1206 or higher package) with sufficient power margin to prevent breakdown or overheating.
[0028] The working principle of a high-voltage drive circuit for MEMS devices in OCS all-optical switching is as follows: When the circuit is working normally, operational amplifier U1 compares the reference voltage at the non-inverting input with the feedback voltage at the inverting input. Microcontroller VG1 uses the MCU to configure the DAC via SPI, outputting a programmable DC voltage (e.g., 0–5V), which is sent to the non-inverting input of operational amplifier U1 as the setting reference for high-voltage output. Operational amplifier U1 acts as an error amplifier, and its inverting input receives the feedback voltage provided by the feedback module. The voltage difference between the feedback voltage and the DC voltage is compared, and the output error signal drives the subsequent transistors. The negative feedback network composed of resistor R7 and capacitor C1 forms a frequency compensation network, improving closed-loop stability, preventing self-oscillation, and ensuring that the system maintains linear response over a wide frequency range. In the subsequent transistors, transistors T1 and T3 form a common-emitter or Darlington current amplification structure, amplifying the small current output by operational amplifier U1 to a current sufficient to drive the high-voltage load. Transistors T2 and T3 form a complementary push-pull structure, improving the linearity and response speed of the output stage. Especially when bidirectional fine-tuning of the output is required, resistors R13 and R9 form a voltage divider network to provide bias for T2, allowing it to operate in the amplification region. Simultaneously, they work in conjunction with transistors T1 and T3 to regulate the output voltage, suppressing fluctuations caused by load or input voltage changes, compensating for voltage fluctuations during high-voltage output, and maintaining output linearity. This generates a high-voltage drive signal, which is received through the drive port VF1 and used to drive MEMS devices. Simultaneously, a high-resistance voltage divider network composed of resistors R5, R3, and R4 proportionally reduces the high-voltage drive signal (e.g., hundreds of volts) to a low voltage range (e.g., a few volts) that the op-amp can handle, i.e., the feedback signal. When the high-voltage drive signal received at the drive port VF1 deviates from the set value due to load or input changes, the feedback voltage changes accordingly. Op-amp U1 adjusts its output, changing the conduction level of the subsequent transistors, thereby adjusting the high-voltage drive signal and achieving dynamic voltage regulation. High-resistance resistors (e.g., R5 = 1MΩ) are used to reduce the feedback network current, adapting to high-voltage, low-current scenarios and avoiding power waste and temperature rise. In addition, by adjusting the MCU... The control program, namely adjusting the programmable DC voltage and replacing low-voltage DACs and error amplifiers of different specifications, can easily change the parameters of the high-voltage output to meet the needs of different application scenarios.
[0029] It will be apparent to those skilled in the art that the present invention is not limited to the details of the exemplary embodiments described above, and that the invention can be implemented in other specific forms without departing from its spirit or essential characteristics. Therefore, the embodiments should be considered in all respects as exemplary and non-limiting, and the scope of the invention is defined by the appended claims rather than the foregoing description. Thus, all variations falling within the meaning and scope of equivalents of the claims are intended to be included within the present invention. No reference numerals in the claims should be construed as limiting the scope of the claims.
[0030] Furthermore, it should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This narrative style is merely for clarity. Those skilled in the art should consider the specification as a whole, and the technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.
Claims
1. A high-voltage drive circuit for MEMS devices used in OCS all-optical switching, characterized in that, The circuit includes: a microcontroller module, an error amplifier module, a high-voltage current amplifier module, a feedback module, and a high-voltage output module; A microcontroller module is used to provide a programmable DC voltage; The error amplification module, connected to the microcontroller module and the feedback module, is used to compare the DC voltage with the feedback voltage provided by the feedback module, compare the voltage difference between the DC voltage and the feedback voltage, and output an error signal. The high-voltage current amplification module, connected to the error amplification module, is used to connect to an external high-voltage DC source and perform voltage fine-tuning and micro-current amplification on the error signal to generate a high-voltage drive signal. The feedback module, connected to the high-voltage current amplifier module, is used to perform voltage division processing on the high-voltage drive signal and provide feedback voltage. The high-voltage output module, connected to the high-voltage current amplification module, is used to receive and output high-voltage drive signals to drive MEMS devices.
2. The high-voltage driving circuit for MEMS devices used in OCS all-optical switching according to claim 1, characterized in that, The microcontroller module includes a microcontroller VG1; the error amplifier module includes a resistor R8, a capacitor C1, a resistor R7, an operational amplifier U1, a voltage regulator J2, and a resistor R13. The operational amplifier U1 is an OPAx196 operational amplifier. The non-inverting input of the operational amplifier U1 is connected to the positive terminal of the microcontroller VG1, and the negative terminal of the microcontroller VG1 is grounded. The power supply terminal and the ground terminal of the operational amplifier VG1 are connected to the voltage regulator J2 and the ground terminal, respectively. The inverting input of the operational amplifier U1 is connected to the first terminal of the resistor R8 and is connected to the first terminal of the resistor R7 through the capacitor C1. The second terminal of the resistor R7 is connected to the output terminal of the operational amplifier U1 and the first terminal of the resistor R13.
3. The high-voltage drive circuit for MEMS devices used in OCS all-optical switching according to claim 2, characterized in that, The resistor R7 and capacitor C1 form a frequency compensation network.
4. The high-voltage driving circuit for MEMS devices used in OCS all-optical switching according to claim 2, characterized in that, The error amplification module includes transistor T2, resistors R9 and R10, transistor T3, resistors R2 and R12, a high-voltage DC source J1, resistor R1, and transistor T1. The base of transistor T2 is connected to the second end of resistor R13. The emitter of transistor T2 is connected to voltage regulator J2 through resistor R9. The collector of transistor T2 is connected to the base of transistor T3 and grounded through resistor R10. The emitter of transistor T3 is grounded. The collector of transistor T3 is connected to one end of resistor R12 and connected to high voltage DC source J1 and one end of resistor R1 through resistor R2. The other end of resistor R1 is connected to the collector of transistor T1. The base of transistor T1 is connected to the other end of resistor R12.
5. The high-voltage driving circuit for MEMS devices used in OCS all-optical switching according to claim 4, characterized in that, The transistors T2 and T3 form a complementary push-pull structure to fine-tune the voltage of the error signal.
6. The high-voltage drive circuit for MEMS devices used in OCS all-optical switching according to claim 5, characterized in that, The transistors T1 and T3 form a common-emitter or Darlington current amplification structure to amplify small currents.
7. A high-voltage drive circuit for MEMS devices used in OCS all-optical switching according to claim 4, characterized in that, The feedback module includes resistors R5, R3, R6, and R4; the high-voltage output module includes a drive port VF1. One end of resistor R5 is connected to the emitter of transistor T1 and the drive port VF1. The other end of resistor R5 is connected to the second end of resistor R8, one end of resistor R4 and one end of resistor R6 through resistor R3. The other ends of resistor R4 and resistor R6 are both grounded.