Radio frequency front-end module and electronic equipment

Abstract

The invention discloses a radio frequency front-end module and electronic equipment. The radio frequency front end module comprises a power amplifier, a first power supply module, a second power supply module and a switch module. The first power supply module is connected between the power supply port and the power supply end of the power amplifier, and the second power supply module is connected between the power supply port and the power supply end of the power amplifier. The switch module comprises a first switch connected with the first power supply module and a second switch connected with the second power supply module; the first switch is switched on when the power amplifier is in a first working mode and switched off when the power amplifier is in a second working mode; and the second switch is switched on when the power amplifier is in the second working mode and switched off when the power amplifier is in the first working mode. Wherein the output power of the power amplifier in the first working mode is greater than the output power of the power amplifier in the second working mode. The switching efficiency of the working modes of the power amplifier can be improved.

Description

Technical Field

[0001] This application relates to the field of radio frequency technology, and more specifically, to a radio frequency front-end module and electronic device. Background Technology

[0002] Currently, radio frequency (RF) front-end modules are widely used in wireless communication, the Internet of Things (IoT), smart homes, and other fields. They can process RF signals (e.g., power amplification, filtering, impedance matching, etc.) to complete the tasks of receiving and transmitting RF signals.

[0003] As a core component of the radio frequency (RF) front-end module, the power amplifier amplifies the power of the RF signal so that it can be effectively radiated to the outside world through the antenna. In some applications, the electronic device containing the RF front-end module switches the power amplifier's operating mode between low power mode (LPM) and high power mode (HPM) depending on signal quality, communication environment, and communication mode.

[0004] However, existing power amplifiers suffer from low efficiency in switching operating modes. Summary of the Invention

[0005] This application provides a radio frequency front-end module and an electronic device.

[0006] According to a first aspect of this application, an RF front-end module is provided, which includes a power supply port for inputting a power supply voltage. The RF front-end module includes a power amplifier, a first power supply module, a second power supply module, and a switching module. The power amplifier has a power supply terminal. The first power supply module is connected between the power supply port and the power supply terminal of the power amplifier, and is used to convert the power supply voltage into a first supply voltage. The second power supply module is connected between the power supply port and the power supply terminal of the power amplifier, and is used to convert the power supply voltage into a second supply voltage, the amplitude of which is less than the amplitude of the first supply voltage. The switching module includes a first switch connected to the first power supply module and a second switch connected to the second power supply module; wherein the first switch is turned on when the power amplifier is in a first operating mode and turned off when the power amplifier is in a second operating mode; the second switch is turned on when the power amplifier is in the second operating mode and turned off when the power amplifier is in the first operating mode. The output power of the power amplifier in the first operating mode is greater than the output power in the second operating mode.

[0007] The RF front-end module provided in this application includes two independent power modules (i.e., a first power module and a second power module) and two switches (i.e., a first switch and a second switch). The two power modules output different supply voltages, and the two switches are connected to the two power modules in a one-to-one correspondence.

[0008] The first operating mode corresponds to the high-power mode of the power amplifier, and the second operating mode corresponds to the low-power mode. Specifically, the power amplifier requires different supply voltages in different operating modes. Therefore, when switching the power amplifier's operating mode is necessary, adjusting the operating states of the two switches allows for the supply of different voltage amplitudes to be output to the power amplifier's power supply terminal, achieving rapid switching of operating modes. Specifically, the time required to adjust the operating states of the two switches is typically less than or equal to 5 microseconds, which significantly improves the efficiency of switching the power amplifier's operating modes.

[0009] According to a second aspect of this application, this application also provides a radio frequency (RF) front-end module, which has a power supply port for inputting a power supply voltage. The RF front-end module includes a low-noise amplifier, a first power supply module, a second power supply module, and a switching module. The low-noise amplifier has a power supply terminal. The first power supply module is connected between the power supply port and the power supply terminal of the low-noise amplifier, and is used to convert the power supply voltage into a first supply voltage. The second power supply module is connected between the power supply port and the power supply terminal of the low-noise amplifier, and is used to convert the power supply voltage into a second supply voltage, the amplitude of which is less than the amplitude of the first supply voltage. The switching module includes a first switch connected to the first power supply module and a second switch connected to the second power supply module; wherein the first switch is turned on when the low-noise amplifier is in a first operating mode and turned off when the low-noise amplifier is in a second operating mode; the second switch is turned on when the low-noise amplifier is in the second operating mode and turned off when the low-noise amplifier is in the first operating mode. The operating current of the low-noise amplifier in the first operating mode is greater than the operating current in the second operating mode.

[0010] The RF front-end module provided in this application includes two independent power modules (i.e., a first power module and a second power module) and two switches (i.e., a first switch and a second switch). The two power modules output different supply voltages, and the two switches are connected to the two power modules in a one-to-one correspondence.

[0011] The first operating mode corresponds to either the high linearity mode or the high gain mode of the low-noise amplifier, while the second operating mode corresponds to its low-power mode. Specifically, the required supply voltage for the low-noise amplifier differs depending on the operating mode. Therefore, when switching the operating mode of the low-noise amplifier is required, adjusting the operating states of the two switches allows for the supply of different amplitude voltages to be output to the amplifier's power supply, achieving rapid mode switching. Specifically, the time required to adjust the operating states of the two switches is typically less than or equal to 5 microseconds, significantly improving the efficiency of switching the low-noise amplifier's operating modes.

[0012] According to a third aspect of this application, this application also provides an electronic device, which includes the radio frequency front-end module described above. Attached Figure Description

[0013] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0014] Figure 1 This is a schematic diagram of a radio frequency front-end module provided in an embodiment of this application.

[0015] Figure 2 yes Figure 1 The diagram shows a structural schematic of a power amplifier in a radio frequency front-end module.

[0016] Figure 3 yes Figure 1 The diagram shows another structural schematic of the power amplifier in the RF front-end module.

[0017] Figure 4 This is another structural schematic diagram of the radio frequency front-end module provided in the embodiments of this application.

[0018] Figure 5 yes Figure 1 The circuit structure diagram of the first power supply module in the RF front-end module shown is illustrated.

[0019] Figure 6 yes Figure 1 The circuit structure diagram of the second power supply module in the RF front-end module is shown.

[0020] Figure 7 yes Figure 4 The diagram shows a structural schematic of a current source module in a radio frequency front-end module.

[0021] Figure 8 yes Figure 4 The diagram shows another structural schematic of the current source module in the RF front-end module.

[0022] Figure 9 yes Figure 8 The diagram shows the structure of the comb-finger electrode of the first transistor in the current source module.

[0023] Figure 10 yes Figure 4 The diagram shows another structural schematic of the current source module in the RF front-end module.

[0024] Figure 11 yes Figure 4 The diagram shows another structural schematic of the current source module in the RF front-end module.

[0025] Figure 12 This is another structural schematic diagram of the radio frequency front-end module provided in the embodiments of this application.

[0026] Figure 13 This is a structural block diagram of the electronic device provided in the embodiments of this application. Detailed Implementation

[0027] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are merely some embodiments of the present application, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present application without creative effort are within the scope of protection of the present application.

[0028] This application provides a radio frequency front-end module 100, which is a component that integrates two or more discrete devices such as radio frequency switches, low noise amplifiers, filters, duplexers, and power amplifiers into an independent module, thereby improving integration and hardware performance, and miniaturizing the size of the radio frequency front-end module 100.

[0029] In this embodiment, the RF front-end module 100 is provided with a power supply port 102 and a ground port 104. The power supply port 102 is used to input the power supply voltage Vbatt. The power supply port 102 can be connected to an external power source to provide the power supply voltage. Exemplarily, the power supply voltage Vbatt can be provided by a battery or other power sources; this application does not limit this. Exemplarily, the power supply voltage Vbatt is provided by the battery in the electronic device (e.g., a mobile phone) where the RF front-end module 100 is located, and the voltage range of the power supply voltage Vbatt is 3.2V to 4.2V, but it is not limited to this range; this application does not impose any particular limitation on it.

[0030] Please see Figure 1 The RF front-end module 100 may include a power amplifier 20, a first power supply module 30, a second power supply module 40, and a switching module 50. The power amplifier 20 has a power supply terminal 205. The first power supply module 30 is connected between the power supply port 102 and the power supply terminal 205 of the power amplifier 20, and is used to convert the power supply voltage into a first supply voltage. The second power supply module 40 is connected between the power supply port 102 and the power supply terminal 205 of the power amplifier 20, and is used to convert the power supply voltage into a second supply voltage.

[0031] In other words, the first power supply module 30 and the second power supply module 40 respectively form two power supply branches. The first power supply branch K1, where the first power supply module 30 is located, outputs a first power supply voltage to the power amplifier 20, and the second power supply branch K2, where the second power supply module 40 is located, outputs a second power supply voltage to the power amplifier 20.

[0032] Specifically, the amplitude of the second supply voltage is less than the amplitude of the first supply voltage. As an example, the amplitude of the first supply voltage can be greater than or equal to 2V, such as 2V, 2.5V, 2.8V, 3.4V, 3.8V, etc. As another example, the amplitude of the second supply voltage can be less than or equal to 1.8V, such as 1.8V, 1.5V, 1.2V, 0.6V, 0.3V, etc.

[0033] In this embodiment, the switch module 50 may include a first switch S1 connected to the first power module 30 and a second switch S2 connected to the second power module 40. That is, the first switch S1 is connected in the first power supply branch K1 and is used to control the conduction or disconnection of the first power supply branch K1; the second switch S2 is connected in the second power supply branch K2 and is used to control the conduction or disconnection of the second power supply branch K2.

[0034] Specifically, the first switch S1 is turned on when the power amplifier 20 is in the first operating mode and turned off when the power amplifier 20 is in the second operating mode; the second switch S2 is turned on when the power amplifier 20 is in the second operating mode and turned off when the power amplifier 20 is in the first operating mode. The output power of the power amplifier 20 in the first operating mode is greater than the output power in the second operating mode.

[0035] In the RF front-end module 100 provided in this embodiment, two independent power modules (i.e., the first power module 30 and the second power module 40) and two switches (i.e., the first switch S1 and the second switch S2) are provided. The two power modules output different supply voltages, and the two switches and the two power modules are connected to each other in a one-to-one correspondence.

[0036] The first operating mode corresponds to the high-power mode of power amplifier 20, and the second operating mode corresponds to the low-power mode of power amplifier 20. Specifically, the power amplifier 20 requires different supply voltages in different operating modes. Therefore, when it is necessary to switch the operating mode of power amplifier 20, by adjusting the operating states of the two switches, supply voltages of different amplitudes can be output to the power supply terminal 205 of power amplifier 20, thereby achieving rapid switching of operating modes. Specifically, the time required to adjust the operating states of the two switches is usually less than or equal to 5 microseconds, which can significantly improve the switching efficiency of the power amplifier 20's operating modes.

[0037] In related technologies, a common approach is to adjust the operating parameters of a single power supply module (e.g., a DC-DC buck converter circuit) to adjust the output voltage of the power supply module (i.e., the supply voltage of the power amplifier 20). However, this approach results in a slow adjustment speed, typically requiring more than one second, leading to a slow switching speed of the power amplifier 20's operating mode and performance degradation during mode switching.

[0038] Specifically, during power supply voltage switching, the prolonged adjustment time in related technologies leads to instability in the bias signal of power amplifier 20, resulting in unstable performance of power amplifier 20. Furthermore, the longer the adjustment time, the greater the power loss of power amplifier 20. In addition, when adjusting the operating parameters of a single power module in related technologies, the significant load differences under different operating modes can easily cause voltage overshoot or undershoot during power supply voltage switching. Signal distortion or incompleteness may also occur during switching, further deteriorating the performance of power amplifier 20.

[0039] To improve the switching efficiency of the power amplifier 20's operating mode and enhance its performance during power mode switching, the inventors of this application have set up two independent power supply modules in the RF front-end module 100 to provide power amplifier 20 with different amplitude supply voltages. This allows different switches to be turned on or off in different operating modes, enabling rapid switching of the supply voltage, thus improving the switching efficiency of the power amplifier 20's operating mode and enhancing its performance during switching.

[0040] Furthermore, the power amplifier 20 in this embodiment can also be replaced with a low-noise amplifier. In this case, the first operating mode can correspond to the high linearity mode or high gain mode of the low-noise amplifier, and the second operating mode can correspond to the low-power mode of the low-noise amplifier. The operating current of the low-noise amplifier in the first operating mode is greater than that in the second operating mode. Specifically, the relevant technical solutions for "replacing the power amplifier 20 with a low-noise amplifier" are described below.

[0041] The specific implementation of the RF front-end module 100 is explained below.

[0042] In this embodiment, the power amplifier 20 is used to amplify the power of the input radio frequency signal so that the radio frequency signal can be successfully radiated to the outside through the antenna. The power amplifier 20 also includes a signal input terminal 201 and a signal output terminal 203.

[0043] Specifically, the signal output terminal 203 is connected to the power supply terminal 205 via an inductor L. On one hand, for DC signals (supply voltage), the inductor L presents very low impedance (approximately a short circuit), allowing the supply voltage to pass smoothly and power the power amplifier 20. On the other hand, for AC signals (RF signals), the inductor L presents very high impedance (approximately an open circuit), preventing the RF signal from flowing through the inductor L to the power supply terminal 205, thus ensuring normal transmission of the RF signal. Furthermore, the inductor L can also filter the power ripple carried in the supply voltage output by the power module, reducing the interference of power ripple on the RF signal. In this embodiment, the specific inductance value of the inductor L is not limited.

[0044] As an example, power amplifier 20 can employ a single-stage amplification architecture. See also... Figure 2 The power amplifier 20 may include a power amplification unit 210 connected between the signal input terminal 201 and the signal output terminal 203. The power amplification unit 210 may include multiple amplifying transistors 2120 and multiple capacitors (not shown in the figure). The input terminals of each of the multiple amplifying transistors 2120 are connected to the signal input terminal 201 through corresponding capacitors, the output terminals of each of the multiple amplifying transistors 2120 are connected to the signal output terminal 203, and the ground terminals of each of the multiple amplifying transistors 2120 are connected to the ground port 104. The capacitors serve to transmit radio frequency signals and block DC signals, ensuring that the DC bias signal applied to the input terminals of each amplifying transistor 2120 is not affected.

[0045] exist Figure 2In the illustrated embodiment, the amplifying transistor 2120 can be a bipolar transistor, such as a homojunction bipolar transistor (BJT) or a heterojunction bipolar transistor (HBT). In other possible embodiments, the amplifying transistor 2120 can be a unipolar transistor, such as any one of a field-effect transistor (FET), a high electron mobility transistor (HEMT), or a pseudo-high electron mobility transistor (PHEMT). Taking a field-effect transistor (FET) as an example, the amplifying transistor 2120 can be a metal-oxide-semiconductor field-effect transistor (MOSFET), or other types of FETs, such as a MESFET; this embodiment is not limited to this.

[0046] As another example, power amplifier 20 can employ a multi-stage amplification architecture. Power amplifier 20 may include M power amplification units 210, which are cascaded between signal input terminal 201 and signal output terminal 203 to achieve higher amplification gain. Here, M is a positive integer greater than 1. For example, M can be 2, 3, 4, etc.

[0047] Of course, in other possible examples, the power amplifier 20 may also adopt a differential architecture, a balanced architecture, a Doherty architecture, etc. This embodiment does not limit the specific implementation of the power amplifier 20.

[0048] In some possible embodiments, please refer to Figure 3 The power amplifier 20 may include a power amplification unit 210 and an adjustable resistor unit 230. The input terminal of the power amplification unit 210 is connected to the signal input terminal 201, and the output terminal of the power amplification unit 210 is connected to the signal output terminal 203. The adjustable resistor unit 230 is connected between the ground terminal and the ground port 104 of the power amplification unit 210. The implementation of the power amplification unit 210 can be found in the detailed description above in the specification, and will not be repeated here.

[0049] As an example, when the power amplifier unit 210 includes a plurality of parallel-connected amplifying transistors 2120, the ground terminals of the plurality of amplifying transistors 2120 are respectively connected to the ground terminal of the power amplifier unit 210, so that the plurality of amplifying transistors 2120 are connected to the ground port 104 through the same adjustable resistor unit 230.

[0050] exist Figure 3 In the illustrated embodiment, the adjustable resistor unit 230 may include a first grounding resistor R01, a second grounding resistor R02, and a switching switch S3. The first grounding resistor R01 is connected between the grounding terminal of the power amplifier unit 210 and the grounding port 104, and the second grounding resistor R02 and the switching switch S3 are connected in series between the grounding terminal of the power amplifier unit 210 and the grounding port 104.

[0051] Specifically, the first grounding resistor R01 can be a single resistor or a resistor network formed by multiple resistors connected in series or parallel; the second grounding resistor R02 can also be a single resistor or a resistor network formed by multiple resistors connected in series or parallel. The switching switch S3 can be a transistor switch, such as an HBT transistor, a MOSFET, etc. As an example, the switching switch S3 and the amplifying transistor 2120 can be implemented using the same type of transistor, for example, both being HBT transistors, so as to integrate the power amplification unit 210 and the adjustable resistor unit 230 into the same chip, thereby improving the overall integration of the RF front-end module 100.

[0052] In this embodiment, the switching switch S3 is turned on when the power amplifier 20 is in the first operating mode and turned off when the power amplifier 20 is in the second operating mode. When the switching switch S3 is in the off state, the second grounding resistor R02 is in the open circuit state, the equivalent resistance value of the adjustable resistor unit 230 is larger, and the gain and output power of the power amplifier unit 210 are reduced to meet the output power requirements of the second operating mode (low power mode).

[0053] Conversely, when the switching switch S3 is in the on state, the first grounding resistor R01 and the second grounding resistor R02 are connected in parallel, and the equivalent resistance value of the adjustable resistor unit 230 is reduced, so that the power amplifier 20 has higher output power to meet the output power requirements of the first working mode (high power mode).

[0054] In some possible embodiments, the resistance of the first grounding resistor R01 is greater than the resistance of the second grounding resistor R02. For example, the resistance of the first grounding resistor R01 can be greater than or equal to 5Ω, such as 5Ω, 8Ω, 10Ω, etc. The resistance of the second grounding resistor R02 can be less than or equal to 2Ω, such as 2Ω, 1Ω, 0.5Ω, etc.

[0055] Therefore, when the power amplifier 20 is in the first operating mode, the equivalent resistance value of the first grounding resistor R01 and the second grounding resistor R02 connected in parallel will be further smaller than the resistance value of the second grounding resistor R02. This allows the power amplifier 20 to have higher output power and gain to meet the output power requirements of the first operating mode (high power mode). Conversely, when the power amplifier 20 is in the second operating mode, the larger resistance value of the first grounding resistor R01 can better limit the gain and output power of the power amplifier unit 210 to meet the output power requirements of the second operating mode (low power mode).

[0056] It should be understood that the way to change the output power of the power amplifier 20 to achieve the switching of the operating mode is not limited to adjusting the resistance value of the adjustable resistor unit 230. The output power of the power amplifier 20 can also be changed to achieve the switching of the operating mode by increasing or decreasing the bias current of each amplifying transistor 2120, increasing or decreasing the number of connected amplifying transistors 2120, etc. This application does not limit this.

[0057] In this embodiment, the first switch S1 is connected to the first power module 30, and is used to turn on or off the first power supply branch K1 where the first power module 30 is located. As an example, such as Figure 1 As shown, the first switch S1 is connected between the output terminal of the first power module 30 and the power supply terminal 205 of the power amplifier 20. As another example, the first switch S1 is connected between the power supply port 102 and the input terminal of the first power module 30. This embodiment does not limit the connection position of the first switch S1.

[0058] In this embodiment, the second switch S2 is connected to the second power module 40, and is used to turn on or off the second power supply branch K2 where the second power module 40 is located. As an example, such as Figure 1 As shown, the second switch S2 is connected between the output terminal of the second power module 40 and the power supply terminal 205 of the power amplifier 20. As another example, the second switch S2 is connected between the power supply port 102 and the input terminal of the second power module 40. This embodiment does not limit the connection position of the second switch S2.

[0059] Specifically, both the first switch S1 and the second switch S2 can be transistor switches, such as MOSFETs, HBTs, etc. As an example, the first switch S1, the second switch S2, and the amplifying transistor 2120 can be implemented using the same type of transistor, such as MOSFETs. The first switch S1, the second switch S2, the first power module 30, and the second power module 40 can be integrated into the same chip, thereby improving the overall integration of the RF front-end module 100.

[0060] In some possible embodiments, the radio frequency front-end module 100 is applied to an electronic device (not shown in the figure), such as a smartphone, tablet, smartwatch, or other 4G or 5G communication device. The electronic device may include a control chip (not shown in the figure), such as a radio frequency transceiver and modem chip, which can control the communication of cellular networks (2G, 3G, 4G, 5G, etc.), mainly including signal encoding and decoding, transmit power control, frequency band switching, etc.

[0061] Specifically, the control terminal of the first switch S1 is used to connect to the control chip, and the control terminal of the second switch S2 is used to connect to the control chip. For example, when both the first switch S1 and the second switch S2 are MOSFETs, the control terminal is the gate; or, when both the first switch S1 and the second switch S2 are HBTs, the control terminal is the base.

[0062] As an example, the control chip can detect the router signal strength and, based on the detected signal strength, control the power amplifier 20 to switch its operating mode between low-power and high-power modes. Depending on the operating mode of the power amplifier 20, the control chip of the electronic device can directly send control signals to the control terminals of the first switch S1 and the second switch S2 to switch the power amplifier 20's supply voltage. In one implementation, the control chip can determine the distance between the electronic device and the router based on the strength of the received Wi-Fi signal. For example, when the Wi-Fi signal strength is less than a preset value, it indicates a greater distance between the electronic device and the router. In this case, the control chip can directly turn on the first switch S1 and turn off the second switch S2 to switch the power amplifier 20's supply voltage to the first supply voltage required for high-power mode. Conversely, when the Wi-Fi signal strength is greater than or equal to the preset value, the control chip can directly turn on the second switch S2 and turn off the first switch S1 to switch the power amplifier 20's supply voltage to the second supply voltage required for low-power mode.

[0063] In some other possible embodiments, please refer to Figure 4 The RF front-end module 100 may further include a control module 60, which is connected to the control terminals of the first switch S1 and the second switch S2, respectively. Specifically, the control module 60 is configured to adjust the operating state of the first switch S1 and the second switch S2 in response to a mode switching command. The mode switching command is used to indicate the switching operating mode of the power amplifier 20, which includes a first operating mode and a second operating mode.

[0064] Specifically, the RF front-end module 100 is applied to an electronic device, and the control module 60 is connected to the control chip in the electronic device. As an example, the control chip can determine the distance between the electronic device and the router based on the router signal strength and send a mode switching command to the control module 60 to switch the operating mode of the power amplifier 20. For example, when the control chip detects that the Wi-Fi signal strength is less than a preset value, it can send a mode switching command to the control module 60 to switch to a high-power mode. In response to this mode switching command, the control module 60 controls the first switch S1 to turn on and the second switch S2 to turn off. Conversely, when the control chip detects that the Wi-Fi signal strength is greater than or equal to a preset value, it can send a mode switching command to the control module 60 to switch to a low-power mode. In response to this mode switching command, the control module 60 controls the second switch S2 to turn on and the first switch S1 to turn off.

[0065] In this embodiment, the first power supply module 30 is connected between the power supply port 102 and the power supply terminal 205 of the power amplifier 20, and is used to convert the power supply voltage into a first supply voltage. Specifically, the first power supply module 30 may include any one of the following: a DC-DC buck converter circuit, a DC-DC boost converter circuit, a DC-DC buck-boost chopper circuit, an envelope tracking power supply circuit (ET), and a low-dropout linear regulator (LDO).

[0066] In this embodiment, the second power supply module 40 is connected between the power supply port 102 and the power supply terminal 205 of the power amplifier 20, and is used to convert the power supply voltage into a second power supply voltage. Specifically, the second power supply module 40 may include any one of the following: a DC-DC buck converter circuit (DC-DC BUCK), a DC-DC boost converter circuit (DC-DC BOOST), a DC-DC buck-boost chopper circuit (DC-DC BUCK-BOOST), an envelope tracking power supply circuit (ET), and a low-dropout linear regulator (LDO).

[0067] In some possible embodiments, the RF front-end module 100 may further include a bandgap voltage reference module and a clock module (neither shown in the figure). The bandgap voltage reference module is used to generate a bandgap reference voltage, and the clock module is used to generate a clock signal. Specifically, the clock module may include an oscillator.

[0068] As an example, the first power module 30 and the second power module 40 are respectively connected to the bandgap reference module, so that the same bandgap reference module provides the bandgap reference voltage to the first power module 30 and the second power module 40 respectively, thereby saving the layout space and hardware cost of the RF front-end module 100.

[0069] As another example, the first power module 30 and the second power module 40 are respectively connected to the clock module, so that the same clock module provides clock signals to the first power module 30 and the second power module 40 respectively, thereby saving layout space and hardware cost of the RF front-end module 100.

[0070] In some other possible embodiments, the RF front-end module 100 may further include multiple bandgap reference modules (not shown in the figure), which are used to generate bandgap reference voltages. The first power supply module 30 and the second power supply module 40 are respectively connected to different bandgap reference modules. Therefore, in the event of a failure of a single bandgap reference module, the power supply modules not connected to the failed bandgap reference module can still operate normally, ensuring the normal operation of the power amplifier 20.

[0071] In some other possible embodiments, the RF front-end module 100 may further include multiple clock modules (not shown in the figure) for generating clock signals. The first power module 30 and the second power module 40 are respectively connected to different clock modules. Therefore, in the event of a failure of a single clock module, the power modules not connected to the failed clock module can still operate normally, ensuring the normal operation of the power amplifier 20.

[0072] In some possible embodiments, the first power module 30, the second power module 40, the bandgap reference module, and the clock module can be integrated into the same chip to improve the overall integration of the RF front-end module 100.

[0073] In some possible embodiments, the first power module 30 and the second power module 40 may adopt the same circuit structure to reduce the design difficulty of the RF front-end module 100.

[0074] As an example, the first power module 30 and the second power module 40 may each include a pulse-width modulation (PWM) type DC-DC buck converter circuit. Further, the ramp signal Vramp used by the first power module 30 and the second power module 40 may be the same. Here, the ramp signal refers to a sawtooth or triangular wave voltage signal with a fixed frequency and slope, which can be used as a comparison reference for generating the pulse-width modulation signal. In addition, the reference voltage Vref used by the first power module 30 and the second power module 40 may be different to ensure that the first power module 30 and the second power module 40 output two supply voltages with different amplitudes. Exemplarily, the first power module 30 and the second power module 40 may be connected to the same ramp generator and the same clock module to save layout space and hardware cost in the RF front-end module 100. Optionally, the first power module 30 and the second power module 40 may be connected to different bandgap reference circuits or voltage regulator circuits to obtain different reference voltages. Alternatively, the first power module 30 and the second power module 40 can be connected to different nodes of the same bandgap reference circuit or voltage regulator circuit to obtain different reference voltages and reduce the hardware cost of the RF front-end module 100.

[0075] As another example, the first power module 30 and the second power module 40 may each include a pulse frequency modulation (PFM) type DC-DC buck converter circuit. Further, the reference voltages used by the first power module 30 and the second power module 40 may be different to ensure that the first power module 30 and the second power module 40 output two supply voltages with different amplitudes. Exemplarily, the first power module 30 and the second power module 40 may be connected to the same clock module to save layout space and hardware cost of the RF front-end module 100. Optionally, the first power module 30 and the second power module 40 may be connected to different bandgap reference circuits or voltage regulator circuits to obtain different reference voltages. Alternatively, the first power module 30 and the second power module 40 may also be connected to different nodes of the same bandgap reference circuit or voltage regulator circuit to obtain different reference voltages and reduce the hardware cost of the RF front-end module 100.

[0076] In some other possible embodiments, the first power module 30 and the second power module 40 may adopt different circuit structures so that the RF front-end module 100 can have better power utilization efficiency in both the first and second operating modes.

[0077] As an example, the first power module 30 may include a pulse width modulation (PWM) type DC-DC buck converter circuit, and the second power module 40 may include a pulse frequency modulation (PFM) type DC-DC buck converter circuit. In the first operating mode, i.e., the high-power mode of the power amplifier 20, the power amplifier 20 requires a higher supply voltage and a larger operating current, resulting in a heavier load on the power module (compared to the second operating mode). In other words, the first power module 30 needs to operate under heavy load conditions. The first power module 30 employs a PWM type BUCK circuit, which has higher power conversion efficiency under heavy load conditions compared to other types of BUCK circuits (such as PFM type BUCK circuits), thus reducing the power loss of the first power module itself. Conversely, in the second operating mode, i.e., the low-power mode of the power amplifier 20, the power amplifier 20 requires a smaller supply voltage and operating current, resulting in a lighter load on the power module (compared to the first operating mode). In other words, the second power module 40 needs to operate under light load conditions. The second power module 40 adopts a PFM-type BUCK circuit, which can reduce the number of switching cycles of the BUCK circuit compared to other types of BUCK circuits (such as PWM-type BUCK circuits) under light load conditions, thereby reducing the power loss of the second power module 40 itself.

[0078] The specific circuit structures of the first power module 30 and the second power module 40 will be introduced below, taking the first power module 30 using a PWM type BUCK circuit and / or the second power module 40 using a PFM type BUCK circuit as examples.

[0079] Please see Figure 5 The first power module 30 may include a first step-down unit 320, a first control unit 340, and a first feedback unit 360. The first step-down unit 320 is connected between the power supply port 102 and the power supply terminal 205 of the power amplifier 20, and is used to convert the power supply voltage into a first supply voltage that is lower than the power supply voltage.

[0080] The first feedback unit 360 is connected between the output terminal 323 of the first buck unit 320 and the first control unit 340, and is used to output a pulse width modulation signal to the first control unit 340. Furthermore, the first feedback unit 360 is also used to sample the output voltage of the first buck unit 320 to obtain a first sampling voltage, and adjust the duty cycle of the pulse width modulation signal according to the difference between the first reference voltage Vref1 and the first sampling voltage. The first reference voltage can be determined by the researchers based on the actual operating conditions of the first power module 30 and a large amount of operating condition test data. For example, the first reference voltage can be 1.2V, 1.5V, 1.8V, 2.5V, 3V, etc., and this embodiment does not impose a specific limitation.

[0081] The first control unit 340 is connected to the first buck unit 320. It adjusts the output voltage of the first buck unit 320 according to a pulse width modulation signal to reduce the difference between the output voltage of the first buck unit 320 and the target value of the first supply voltage. For example, the target value of the first supply voltage can be 2.5V, 3.4V, 3.8V, etc. Therefore, in this embodiment, the first power module 30 introduces a feedback loop on the basic BUCK circuit architecture, making the output voltage (i.e., the first supply voltage) of the first power module 30 more stable.

[0082] exist Figure 5 In the illustrated embodiment, the first buck unit 320 may include a first switch Q1, a second switch Q2, a first inductor L1, a second capacitor C2, and a second resistor R2. The first terminal of the first switch Q1 is connected to the input terminal 321 of the first buck unit 320, and the second terminal of the first switch Q1 is connected to the output terminal 323 of the first buck unit 320 through the first inductor L1. The first terminal of the second switch Q2 is connected to the second terminal of the first switch Q1, and the second terminal of the second switch Q2 is grounded. The first control unit 340 is connected to the control terminals of the first switch Q1 and the second switch Q2, respectively.

[0083] As an example, such as Figure 5 As shown, both the first switch Q1 and the second switch Q2 are MOSFETs, with the first terminal of the switch being the drain, the second terminal being the source, and the control terminal being the gate. In other possible examples, both the first switch Q1 and the second switch Q2 can be HBTs or both can be BJTs.

[0084] Specifically, one end of the second capacitor C2 is connected to the output terminal 323 of the first step-down unit 320, and the other end of the second capacitor C2 is grounded. The second resistor R2 and the second capacitor C2 are connected in parallel. The first control unit 340 can be a drive and logic controller, which is used to control the first switch Q1 to be turned on or off, and to control the second switch Q2 to be turned on or off.

[0085] The control process of the first control unit 340 is described below. In the first stage, the first control unit 340 controls the first switch Q1 to turn on and the second switch Q2 to turn off. The current flowing through the first inductor L1 increases linearly, and the first inductor L1 stores magnetic energy. At this time, part of the linearly increasing inductor current is supplied to the load (i.e., power amplifier 20), and the other part charges the second capacitor C2, causing the output voltage of the first power module 30 to rise. In the second stage, the first control unit 340 controls the first switch Q1 to turn off and the second switch Q2 to turn on, forming a current loop between the first inductor L1, the second capacitor C2, and the second switch Q2. At this time, the first inductor L1 releases the previously stored magnetic energy, converting it into electrical energy to continue supplying power to the load, and the second capacitor C2 also discharges to the load to maintain the stability of the output voltage. The first control unit 340 continuously alternates between the first and second stages, so that the output voltage of the first power module 30 is stabilized within a voltage range.

[0086] exist Figure 5 In the illustrated embodiment, the first feedback unit 360 may include a first voltage divider subunit 3610, a differential amplifier 3630, and a first comparator 3650. One end of the first voltage divider subunit 3610 is connected to the output terminal 323 of the first buck unit 320, and the other end is grounded. The first voltage divider subunit 3610 has a first voltage divider node J1, and the voltage of the first voltage divider node J1 is the first sampling voltage.

[0087] In this embodiment, the first voltage divider subunit 3610 is used to divide the output voltage of the first power module 30 so that the voltage of the first voltage divider node J1 is within the operating voltage range of the differential amplifier 3630, thereby ensuring that the differential amplifier 3630 can work normally and ensuring the smooth generation of the control voltage.

[0088] Specifically, the first voltage divider subunit 3610 may include a first voltage divider resistor 3612 and a second voltage divider resistor 3614 connected in series, and the connection node of the first voltage divider resistor 3612 and the second voltage divider resistor 3614 is the first voltage divider node J1. For example, the first voltage divider resistor 3612 may be a single resistor or a resistor network formed by multiple resistors connected in series or parallel. The second voltage divider resistor 3614 may be a single resistor or a resistor network formed by multiple resistors connected in series or parallel.

[0089] In some possible embodiments, the resistance values ​​of the first voltage divider resistor 3612 and the second voltage divider resistor 3614 can both be fixed values. In other possible embodiments, the resistance value of at least one of the first voltage divider resistor 3612 and the second voltage divider resistor 3614 can be adjusted. In this case, the voltage division ratio of the first voltage divider subunit 3610 to the output voltage of the first power supply module 30 can be flexibly adjusted, thereby changing the triggering condition corresponding to the same control voltage output by the differential amplifier 3630, and allowing for flexible adjustment of the target value of the first supply voltage.

[0090] In this embodiment, the first input terminal of the differential amplifier 3630 is connected to the first voltage divider node J1, the second input terminal of the differential amplifier 3630 is used to input the first reference voltage Vref1, and the output terminal of the differential amplifier 3630 is connected to the first input terminal of the first comparator 3650. The output terminal of the differential amplifier 3630 is also connected to the first input terminal of the differential amplifier 3630 through a compensation network 3670. The differential amplifier 3630 is used to convert the difference between the first reference voltage and the first sampled voltage into a control voltage.

[0091] Specifically, the compensation network 3670 serves as phase compensation, preventing self-oscillation in the differential amplifier 3630. As an example, such as... Figure 5 As shown, the compensation network 3670 may include a first resistor R1 and a first capacitor C1, which are connected in series between the output terminal and the first input terminal of the differential amplifier 3630. As another example, the compensation network 3670 may include a first resistor R1 and a first capacitor C1, which are connected in parallel between the output terminal and the first input terminal of the differential amplifier 3630. As yet another example, the compensation network 3670 may include a first capacitor C1, which is connected between the output terminal and the first input terminal of the differential amplifier 3630. The specific implementation of the compensation network 3670 can be flexibly adjusted by the developers based on the actual working conditions and requirements of the differential amplifier 3630; this embodiment does not limit this.

[0092] The second input terminal of the first comparator 3650 is used to input a ramp signal Vramp with a fixed frequency. The output terminal of the first comparator 3650 is connected to the first control unit 340, which is used to compare the control voltage with the ramp signal and output the comparison result, which is a pulse width modulation signal.

[0093] The feedback mechanism of the first feedback unit 360 is explained here. When the output voltage of the first power module 30 decreases, the amplitude of the first sampled voltage decreases, the difference between the first sampled voltage and the first reference voltage Vref1 increases, and the control voltage increases. Consequently, within each triangular wave cycle of the ramp signal Vramp, the time during which the control voltage is greater than the triangular wave amplitude increases, the duty cycle of the pulse width modulation signal increases, and the output voltage of the first power module 30 rises. Conversely, when the output voltage of the first power module 30 rises, the corresponding adjustment process is the reverse of the above process logic, which will not be elaborated here.

[0094] Please see Figure 6 The second power module 40 may include a second step-down unit 410, a second control unit 430, and a second feedback unit 450. The second step-down unit 410 is connected between the power supply port 102 and the power supply terminal 205 of the power amplifier 20, and is used to convert the power supply voltage into a second supply voltage that is lower than the power supply voltage.

[0095] The second feedback unit 450 is connected between the output terminal 414 of the second buck unit 410 and the second control unit 430, and is used to output a pulse frequency modulation signal to the second control unit 430. Furthermore, the second feedback unit 450 is also used to sample the output voltage of the second buck unit 410 to obtain a second sampling voltage, and adjust the duty cycle of the pulse frequency modulation signal according to the relationship between the second reference voltage Vref2 and the second sampling voltage. The second reference voltage can be determined by the researchers based on the actual operating conditions of the second power module 40 and a large amount of operating condition test data. For example, the second reference voltage can be 1.2V, 1.5V, 1.8V, 2.5V, 3V, etc., and this embodiment does not impose a specific limitation.

[0096] The second control unit 430 is connected to the second buck unit 410 and is used to adjust the output voltage of the second buck unit 410 according to the pulse frequency modulation signal to reduce the difference between the output voltage of the second buck unit 410 and the target value of the second supply voltage. For example, the target value of the second supply voltage can be 1.5V, 1.2V, 0.6V, etc. Therefore, in this embodiment, the second power module 40 introduces a feedback loop on the basic BUCK circuit architecture, making the output voltage (i.e., the second supply voltage) of the second power module 40 more stable.

[0097] exist Figure 6In the illustrated embodiment, the second buck unit 410 may include a third switch Q3, a fourth switch Q4, a second inductor L2, a third capacitor C3, and a third resistor R3. The first terminal of the third switch Q3 is connected to the input terminal 412 of the second buck unit 410, and the second terminal of the third switch Q3 is connected to the output terminal 414 of the second buck unit 410 through the second inductor L2. The first terminal of the fourth switch Q4 is connected to the second terminal of the third switch Q3, and the second terminal of the fourth switch Q4 is grounded. The second control unit 430 is connected to the control terminals of both the third switch Q3 and the fourth switch Q4.

[0098] As an example, such as Figure 6 As shown, both the third switch Q3 and the fourth switch Q4 are MOSFETs, with the first terminal of the switch being the drain, the second terminal being the source, and the control terminal being the gate. In other possible examples, both the third switch Q3 and the fourth switch Q4 can be HBTs or both can be BJTs.

[0099] Specifically, one end of the third capacitor C3 is connected to the output terminal 414 of the second step-down unit 410, and the other end of the third capacitor C3 is grounded. The third resistor R3 is connected in parallel with the third capacitor C3. The second control unit 430 can be a drive and logic controller, which is used to control the third switch Q3 to be turned on or off, and to control the fourth switch Q4 to be turned on or off.

[0100] The control process of the second control unit 430 is described below. In the first stage, the second control unit 430 controls the third switch Q3 to turn on and the fourth switch Q4 to turn off. The current flowing through the second inductor L2 increases linearly, storing magnetic energy. At this time, part of the linearly increasing inductor current is supplied to the load (i.e., power amplifier 20), and the other part charges the third capacitor C3, causing the output voltage of the second power module 40 to rise. In the second stage, the second control unit 430 controls the third switch Q3 to turn off and the fourth switch Q4 to turn on, forming a current loop between the second inductor L2, the third capacitor C3, and the fourth switch Q4. At this time, the second inductor L2 releases the previously stored magnetic energy, converting it into electrical energy to continue supplying power to the load, and the third capacitor C3 also discharges to the load to maintain a stable output voltage. The second control unit 430 continuously alternates between the first and second stages, ensuring that the output voltage of the second power module 40 remains stable within a certain voltage range.

[0101] exist Figure 6In the illustrated embodiment, the second feedback unit 450 may include a second voltage divider subunit 4520, a second comparator 4540, and a frequency modulation subunit 4560. One end of the second voltage divider subunit 4520 is connected to the output terminal 414 of the second buck unit 410, and the other end is grounded. The second voltage divider subunit 4520 has a second voltage divider node J2, and the voltage of the second voltage divider node J2 is the second sampling voltage.

[0102] In this embodiment, the second voltage divider subunit 4520 is used to divide the output voltage of the second power module 40 so that the voltage of the second voltage divider node J2 is within the operating voltage range of the second comparator 4540, thereby ensuring that the second comparator 4540 can work normally.

[0103] Specifically, the second voltage divider subunit 4520 may include a third voltage divider resistor 4521 and a fourth voltage divider resistor 4523 connected in series, and the connection node of the third voltage divider resistor 4521 and the fourth voltage divider resistor 4523 is the second voltage divider node J2. For example, the third voltage divider resistor 4521 may be a single resistor or a resistor network formed by multiple resistors connected in series or parallel. The fourth voltage divider resistor 4523 may be a single resistor or a resistor network formed by multiple resistors connected in series or parallel.

[0104] In some possible embodiments, the resistance values ​​of the third voltage divider resistor 4521 and the fourth voltage divider resistor 4523 can both be fixed. In other possible embodiments, the resistance value of at least one of the third voltage divider resistor 4521 and the fourth voltage divider resistor 4523 can be adjusted. In this case, the voltage division ratio of the second voltage divider subunit 4520 to the output voltage of the second power supply module 40 can be flexibly adjusted, thereby changing the trigger condition corresponding to the same comparison result output by the second comparator 4540, and allowing for flexible adjustment of the target value of the second supply voltage.

[0105] In this embodiment, the first input terminal of the second comparator 4540 is connected to the second voltage divider node J2, and the second input terminal of the second comparator 4540 is used to input the second reference voltage Vref2. The output terminal of the second comparator 4540 is connected to the input terminal of the frequency modulation subunit 4560. The second comparator 4540 is used to compare the second reference voltage with the second sampled voltage and output a comparison result characterizing the magnitude relationship between the second sampled voltage and the second reference voltage. The output terminal of the frequency modulation subunit 4560 is connected to the second buck unit 410 and is used to convert the comparison result output by the second comparator 4540 into a pulse frequency modulation signal. Specifically, the frequency modulation subunit 4560 can generate a pulse signal with a fixed width, and the comparison result output by the second comparator 4540 can adjust the generation frequency of the pulse signal, thereby forming a pulse frequency modulation signal.

[0106] The feedback mechanism of the second feedback unit 450 is explained here. When the output voltage of the second power module 40 decreases, the amplitude of the second sampling voltage decreases. When the amplitude of the second sampling voltage is less than the second reference voltage Vref2, the second comparator 4540 triggers the frequency modulation subunit 4560 to generate a single pulse signal, thereby triggering the third switch Q3 to turn on. This allows the power supply voltage to transfer energy to the third capacitor C3 and the load through the second inductor L2, causing the output voltage of the second power module 40 to rise. Conversely, when the output voltage of the second power module 40 rises, the amplitude of the second sampling voltage increases. When the amplitude of the second sampling voltage is greater than or equal to the second reference voltage Vref2, the second comparator 4540 does not trigger the frequency modulation subunit 4560 to operate, the third switch Q3 remains off, and the output voltage of the second power module 40 decreases.

[0107] Please refer to it again. Figure 4 The RF front-end module 100 may further include a current source module 70, a bias module 80, and a control module 60. The current source module 70 is used to output a reference current Iref. The bias module 80 is connected between the current source module 70 and the signal input terminal 201 of the power amplifier 20. It generates a bias current Ib based on the reference current and outputs the bias current to the signal input terminal 201 of the power amplifier 20. This bias current can establish a stable quiescent operating point (Q-point) for the amplifying transistor 2120 inside the power amplifier 20, enabling the power amplifier 20 to perform "linear amplification" of the input RF signal.

[0108] Specifically, the bias module 80 is used to convert the reference current into the bias current of the input power amplifier 20. When the bias transistor 810 in the bias module 80 is in the amplification state, the amplitude of the reference current and the amplitude of the bias current are positively correlated. That is, the smaller the amplitude of the reference current, the smaller the amplitude of the bias current.

[0109] The control module 60 is connected to the current source module 70 and is configured to output a control signal to the current source module 70 based on the operating mode of the power amplifier 20. The control signal is used to adjust the amplitude of the reference current. Specifically, the amplitude of the reference current in the first operating mode is greater than the amplitude of the reference current in the second operating mode.

[0110] Therefore, in this embodiment, after receiving a mode switching command to switch from the second operating mode to the first operating mode, the control module 60 increases the amplitude of the reference current, thereby increasing the amplitude of the bias current, to increase the output power of the power amplifier 20 and switch the power amplifier 20 to the first operating mode; conversely, after receiving a mode switching command to switch from the first operating mode to the second operating mode, it decreases the amplitude of the reference current, thereby decreasing the amplitude of the bias current, to decrease the output power of the power amplifier 20 and switch the power amplifier 20 to the second operating mode.

[0111] exist Figure 4 In the illustrated embodiment, the bias module 80 may include a bias transistor 810 and a plurality of clamping devices 830 connected in series. The bias transistor 810 is used to convert the reference current into a bias current for the input power amplifier 20. The control terminal of the bias transistor 810 is connected to the current source module 70, the first terminal of the bias transistor 810 is connected to the power supply port 102, and the second terminal of the bias transistor 810 is connected to the signal input terminal 201.

[0112] As an example, the bias transistor 810 can be a bipolar transistor. The control terminal of the bias transistor 810 is the base of the bipolar transistor, the first terminal of the bias transistor 810 is the collector of the bipolar transistor, and the second terminal of the bias transistor 810 is the emitter of the bipolar transistor. For example, the bias transistor 810 can be a BJT, HBT, etc.

[0113] As another example, the bias transistor 810 can be a unipolar transistor. In this case, the control terminal of the bias transistor 810 is the gate of the unipolar transistor, the first terminal of the bias transistor 810 is the source of the unipolar transistor, and the second terminal of the bias transistor 810 is the drain of the bipolar transistor. For example, the bias transistor 810 can be a MOSFET, a HEMT, a PHEMT, etc.

[0114] Therefore, when the amplitude of the reference current is adjusted, the input current at the control terminal of the bias transistor 810 changes. Taking the bias transistor 810 as a bipolar transistor as an example, when the amplitude of the reference current decreases, the current at the control terminal of the bias transistor 810 decreases, and the currents at the first and second terminals of the bias transistor 810 decrease accordingly. In this case, the operating state of the bias transistor 810 can be maintained in the amplification state. Compared with the method of adjusting the bias current by clamping the current at the first terminal of the bias transistor 810, the embodiments of this application can ensure the operating stability of the bias module 80.

[0115] exist Figure 4In the embodiment shown, the positive terminal of the clamping device 830 is connected to the control terminal of the bias transistor 810, and the negative terminal of the clamping device 830 is connected to the ground port 104.

[0116] As an example, the clamping device 830 can be a diode, such as a common silicon diode, a silicon carbide Schottky diode, etc.

[0117] As another example, the clamping device 830 can be a bipolar transistor with its base and collector connected, such as a BJT or HBT. With the base and collector connected, the bipolar transistor can also be equivalent to a diode, where the base is the anode and the emitter is the cathode. Therefore, when both the amplifying transistor 2120 and the bias transistor 810 in the power amplifier 20 are implemented using bipolar transistors, it is beneficial to integrate the bias module 80 and the power amplifier 20 into the same chip, thereby improving the overall integration of the RF front-end module 100.

[0118] Specifically, multiple clamping devices 830 connected in series can ensure that the control terminal of the bias transistor 810 is maintained at a certain clamping voltage value, thereby ensuring the smooth operation of the bias transistor 810 and the amplifying transistor 2120 in the power amplifier 20. For example, when there are two clamping devices 830 and the forward conduction voltage of a single clamping device 830 is 0.7V, the clamping voltage value at the control terminal of the bias transistor 810 is 1.4V.

[0119] Please see Figure 7 The current source module 70 may include an operational amplifier unit 720, a current mirror unit 740, and a resistor unit 760. The current mirror unit 740 may include a first current branch 741 and a second current branch 742. The first end of the first current branch 741 and the first end of the second current branch 742 are respectively connected to the power supply port 102.

[0120] The output terminal of the operational amplifier unit 720 is connected to the control terminal of the first current branch 741 and the control terminal of the second current branch 742, respectively. The first input terminal of the operational amplifier unit 720 is used to input the third reference voltage Vref3. The second input terminal of the operational amplifier unit 720 is connected to the second terminal of the first current branch 741, and the second terminal of the second current branch 742 is connected to the bias module 80. The resistor unit 760 is connected between the second terminal of the first current branch 741 and the ground port 104. The third reference voltage can be determined by the researchers based on the actual working conditions of the current source module 70 and a large amount of operating condition test data. For example, the third reference voltage can be 1.2V, 1.5V, 1.8V, 2.5V, 3V, etc., and this embodiment does not impose a specific limitation.

[0121] The operational amplifier unit 720 acts as a voltage clamp, ensuring that the voltage at the second terminal of the first current branch 741 changes in accordance with the input voltage (i.e., the third reference voltage) at the first input terminal of the operational amplifier unit 720. Specifically, the operational amplifier unit 720 can be an operational amplifier. The current mirroring unit 740 mirrors the branch current of the first current branch 741, and the mirrored current is output to the bias module 80 through the second current branch 742. In other words, the mirrored current is the reference current output by the current source module 70.

[0122] Specifically, the control signal output by the control module 60 is used to adjust the operating parameters of the current source module 70. The operating parameters of the current source module 70 may include at least one of the first size value of the transistor in the first current branch 741, the second size value of the transistor in the second current branch 742, and the equivalent resistance value of the resistor unit 760.

[0123] For ease of understanding, the first dimension value is denoted as Z1, and the second dimension value is denoted as Z2. The reference current output by the current source module 70 is A*Vref3 / R, where A is the ratio of the width-to-length ratio of the transistor in the second current branch 742 to that in the first current branch 741, i.e., Z2 / Z1. Therefore, the control module 60 can adjust the amplitude of the reference current by adjusting at least one of the above three operating parameters, thus improving the flexibility of reference current adjustment.

[0124] In some possible embodiments, the control signal output by the control module 60 is used to adjust a first dimension value of the transistor in the first current branch 741. See also... Figure 8 The current source module 70 may further include a switching unit 780, which may include a third switch S3. The first current branch 741 may include at least two first transistors M1, and the third switch S3 is connected to at least one first transistor M1. The first terminals of the at least two first transistors M1 are all connected to the first terminal of the first current branch 741, and the second terminal of the at least one first transistor M1 is connected to the second terminal of the first current branch 741 through the third switch S3. The control terminals of the at least two first transistors M1 are all connected to the control terminals of the first current branch 741.

[0125] As an example, such as Figure 8As shown, there are three first transistors M1. The second terminal of one of the first transistors M1 is connected to the second terminal of the first current branch 741 via the third switch S3, and the second terminals of the remaining two first transistors M1 are directly connected to the second terminal of the first current branch 741. Of course, in other possible examples, the second terminals of two of the first transistors M1 are connected to the second terminal of the first current branch 741 via the third switch S3, and the second terminal of the remaining first transistor M1 is directly connected to the second terminal of the first current branch 741. Furthermore, the number of first transistors M1 can also be 2, 4, 5, etc., and this embodiment does not limit this.

[0126] Specifically, the first transistor M1 is a field-effect transistor (FET). The first terminal, second terminal, and control terminal of the first transistor M1 are the source, drain, and gate of the FET, respectively. Figure 8 In this diagram, the first transistor M1 is a P-channel metal-oxide-semiconductor field-effect transistor (PMOS). The third switch S3 can be a transistor switch, such as a MOSFET.

[0127] In this embodiment, the control module 60 is connected to the switch unit 780. The control module 60 is specifically configured to: control the third switch S3 to be in the off state when the power amplifier 20 is in the first working mode; and control the third switch S3 to be in the on state when the power amplifier 20 is in the second working mode.

[0128] It is easy to understand that the first dimension value of the transistors in the first current branch 741 refers to the total width-to-length ratio of the first transistors M1 connected to the first current branch 741. In other words, the more first transistors M1 connected to the first current branch 741, the larger the first dimension value, the smaller the ratio A, and the smaller the amplitude of the reference current.

[0129] Therefore, when it is necessary to control the power amplifier 20 to be in the first operating mode, the control module 60 controls the third switch S3 to open, reducing the number of first transistors M1 connected to the first current branch 741, thereby reducing the first size value. The amplitudes of the reference current and the bias current increase accordingly, thereby increasing the output power of the power amplifier 20 and switching the power amplifier 20 to the first operating mode. Conversely, when it is necessary to control the power amplifier 20 to be in the second operating mode, the control module 60 controls the third switch S3 to open, increasing the number of first transistors M1 connected to the first current branch 741, thereby increasing the first size value. The amplitudes of the reference current and the bias current decrease accordingly, thereby reducing the output power of the power amplifier 20 and switching the power amplifier 20 to the second operating mode.

[0130] In some possible embodiments, the width-to-length ratio of each first transistor M1 is the same to reduce the fabrication cost of the current source module 70.

[0131] This section explains the "width-to-length ratio," using the first transistor M1 as an example of a field-effect transistor. Please refer to [link to relevant documentation]. Figure 9 Each designated electrode 7412 of the first transistor M1 may include a plurality of comb-finger electrodes 7414, one end of which is connected and arranged along a first direction X, and each comb-finger electrode 7414 extends along a second direction Y. The first direction X and the second direction Y intersect. For example, the angle between the first direction X and the second direction Y can be greater than or equal to 80 degrees and less than or equal to 90 degrees; exemplaryly, the angle can be 80 degrees, 85 degrees, 88 degrees, or 90 degrees. Ideally, the first direction X and the second direction Y are perpendicular.

[0132] The aspect ratio of the first transistor M1 is N*W / L. Where L is the dimension of a single comb-finger electrode 7414 in the first direction X, W is the dimension of a single comb-finger electrode 7414 in the second direction Y, and N is the number of comb-finger electrodes 7414. For example, in... Figure 9 In the above, N is 5, so the width-to-length ratio of the first transistor M1 is 5*W / L. When the third switch S3 is turned on, multiple first transistors M1 are connected in parallel, which is equivalent to increasing the number of comb-finger electrodes 3414. Therefore, the total width-to-length ratio of the first transistors M1 connected to the first current branch 741 increases.

[0133] Specifically, the specified electrode 7412 can be either the source or the drain. Figure 9 In this configuration, one designated electrode 7412a can be the source electrode, and the other designated electrode 7412b can be the drain electrode. The multiple comb-finger electrodes 7414 included in the source electrode and the multiple comb-finger electrodes 7414 included in the drain electrode can be arranged alternately in sequence.

[0134] In some other possible embodiments, at least two of the first transistors M1 have different aspect ratios. In this case, there can be multiple third switches S3, each connected to a corresponding first transistor M1. By controlling the on or off state of the multiple third switches S3, the first dimension value can be adjusted more flexibly, allowing for more flexible and reasonable adjustment of the reference current amplitude.

[0135] In some other possible embodiments, the control signal output by the control module 60 is not used to adjust the first size value, but rather to adjust other operating parameters (e.g., the second size value of the transistor in the second current branch 742). In this case, the first current branch 741 may include only one first transistor M1, and the switching unit 780 is not connected to the first current branch 741.

[0136] In some other possible embodiments, the control signal output by the control module 60 is used to adjust the second dimension value of the transistor in the second current branch 742. See also... Figure 10 The current source module 70 may further include a switching unit 780, which may include a fourth switch S4. The second current branch 742 may include at least two second transistors M2, and the fourth switch S4 is connected to at least one second transistor M2. The first terminals of the at least two second transistors M2 are all connected to the first terminal of the second current branch 742, and the second terminal of the at least one second transistor M2 is connected to the second terminal of the second current branch 742 through the fourth switch S4. The control terminals of the at least two second transistors M2 are all connected to the control terminals of the second current branch 742.

[0137] As an example, such as Figure 10 As shown, there are three second transistors M2. The second terminal of one second transistor M2 is connected to the second terminal of the second current branch 742 via the fourth switch S4, and the second terminals of the remaining two second transistors M2 are directly connected to the second terminal of the second current branch 742. Of course, in other possible examples, the second terminals of two second transistors M2 are connected to the second terminal of the second current branch 742 via the fourth switch S4, and the second terminal of the remaining second transistor M2 is directly connected to the second terminal of the second current branch 742. Furthermore, the number of second transistors M2 can also be 2, 4, 5, etc., and this embodiment does not limit this.

[0138] Specifically, the second transistor M2 is a field-effect transistor. The first terminal, second terminal, and control terminal of the second transistor M2 are the source, drain, and gate of the field-effect transistor, respectively. Figure 10 In this diagram, the second transistor M2 is a P-channel metal-oxide-semiconductor field-effect transistor (PMOS). The fourth switch S4 can be a transistor switch, such as a MOSFET.

[0139] In this embodiment, the control module 60 is connected to the switch unit 780. The control module 60 is specifically configured to: control the fourth switch S4 to be in the on state when the power amplifier 20 is in the first working mode; and control the fourth switch S4 to be in the off state when the power amplifier 20 is in the second working mode.

[0140] It is easy to understand that the second dimension value of the transistors in the second current branch 742 refers to the total width-to-length ratio of the second transistors M2 connected to the second current branch 742. In other words, the more second transistors M2 connected to the second current branch 742, the larger the second dimension value, the larger the ratio A, and the larger the amplitude of the reference current.

[0141] Therefore, when it is necessary to control the power amplifier 20 to be in the first operating mode, the control module 60 controls the fourth switch S4 to be turned on, increasing the number of second transistors M2 connected to the second current branch 742, thereby increasing the second size value. The amplitudes of the reference current and the bias current increase accordingly, thereby increasing the output power of the power amplifier 20 and causing the power amplifier 20 to switch to the first operating mode. Conversely, when it is necessary to control the power amplifier 20 to be in the second operating mode, the control module 60 controls the fourth switch S4 to be turned off, reducing the number of second transistors M2 connected to the second current branch 742, thereby decreasing the second size value. The amplitudes of the reference current and the bias current decrease accordingly, thereby decreasing the output power of the power amplifier 20 and causing the power amplifier 20 to switch to the second operating mode.

[0142] In some possible embodiments, the aspect ratios of each second transistor M2 are the same to reduce the fabrication cost of the current source module 70. For a description of the aspect ratio, please refer to the section on the aspect ratio of the first transistor M1 in the preceding specification; it will not be repeated here.

[0143] In some other possible embodiments, at least two of the second transistors M2 have different aspect ratios. In this case, there can be multiple fourth switches S4, each connected to a corresponding second transistor M2. By controlling the on or off state of the multiple fourth switches S4, the second dimension value can be adjusted more flexibly, allowing for more flexible and reasonable adjustment of the reference current amplitude.

[0144] In some other possible embodiments, the control signal output by the control module 60 is not used to adjust the second size value, but rather to adjust other operating parameters (e.g., the first size value of the transistor in the first current branch 741). In this case, the second current branch 742 may consist of only one second transistor M2, and the switching unit 780 is not connected to the second current branch 742.

[0145] In some other possible embodiments, the control signal output by the control module 60 is used to adjust the equivalent resistance value of the resistor unit 760. See also... Figure 11 The current source module 70 may also include a switching unit 780, which may include at least one fifth switch S5, and the resistor unit 760 may include multiple resistors R03.

[0146] As an example, such as Figure 11 As shown, there are multiple parallel resistor branches between the second end of the first current branch 741 and the ground port 104. Each resistor branch includes at least one resistor R03, and at least one fifth switch S5 is connected in series in at least one resistor branch. Specifically... Figure 3In the circuit, there are 3 resistor branches, each branch includes a resistor R03, and there is 1 fifth switch S5.

[0147] As another example, multiple resistors R03 are connected in series between the second end of the first current branch 741 and the ground port 104, and at least one fifth switch S5 is connected in parallel across at least one resistor R03.

[0148] Specifically, the fifth switch S5 can be a transistor switch, such as a MOSFET. The number of fifth switches S5 can be less than the number of resistors R03, or the number of fifth switches S5 can be equal to the number of resistors R03. The resistance values ​​of multiple resistors R03 can all be the same, or at least two resistors R03 can have different resistance values; this embodiment does not limit this.

[0149] In this embodiment, the control module 60 is connected to the switch unit 780. The control module 60 is specifically configured to: control at least one fifth switch S5 to be in the on state when the power amplifier 20 is in the first working mode; and control at least one fifth switch S5 to be in the off state when the power amplifier 20 is in the second working mode.

[0150] Therefore, when it is necessary to control the power amplifier 20 to be in the first operating mode, the control module 60 controls the fifth switch S5 to be turned on, reducing the equivalent resistance value of the resistor unit 760. The amplitudes of the reference current and the bias current increase accordingly, thereby increasing the output power of the power amplifier 20 and switching the power amplifier 20 to the first operating mode. Conversely, when it is necessary to control the power amplifier 20 to be in the second operating mode, the control module 60 controls the fifth switch S5 to be turned off, increasing the equivalent resistance value of the resistor unit 760. The amplitudes of the reference current and the bias current decrease accordingly, thereby reducing the output power of the power amplifier 20 and switching the power amplifier 20 to the second operating mode.

[0151] In some other possible embodiments, the control signal output by the control module 60 is not used to adjust the equivalent resistance value of the resistor unit 760, but rather to adjust other operating parameters (e.g., the second size value of the transistor in the second current branch 742). In this case, the resistor unit 760 may consist of only one resistor R03, and the switching unit 780 is not connected to the resistor unit 760.

[0152] In this embodiment, the control module 60 is connected to the switching unit 780 and is used to control the switches included in the switching unit 780 to be turned on or off. Specifically, the control module 60 may be a microcontroller unit (MCU); it may also be a chip integrating one or more digital control circuits or analog control circuits, which is not limited in this embodiment.

[0153] As an example, the switching unit 780 may include a switch. Here, "a switch" could be a third switch S3, a fourth switch S4, or a fifth switch S5. In this case, the control module 60 is connected to the control terminal of the switch.

[0154] As another example, the switching unit 780 may include multiple switches. Here, "multiple switches" may include at least two or all three of the third switch S3, the fourth switch S4, and the fifth switch S5. In this case, the control module 60 is connected to the control terminals of the multiple switches, thereby allowing adjustment of at least two operating parameters of the current source module 70 to more flexibly adjust the bias current of the power amplifier 20.

[0155] This application provides an RF front-end module 100, which may include a power amplifier 20, a first power module 30, a second power module 40, and a switching module 50. The power amplifier 20 has a power supply terminal 205. The first power module 30 is connected between the power supply port 102 and the power supply terminal 205 of the power amplifier 20, and is used to convert the power supply voltage into a first power supply voltage. The second power module 40 is connected between the power supply port 102 and the power supply terminal 205 of the power amplifier 20, and is used to convert the power supply voltage into a second power supply voltage. Specifically, the amplitude of the second power supply voltage is smaller than the amplitude of the first power supply voltage.

[0156] In this embodiment, the switch module 50 may include a first switch S1 connected to the first power module 30 and a second switch S2 connected to the second power module 40. Specifically, the first switch S1 is turned on when the power amplifier 20 is in a first operating mode and turned off when the power amplifier 20 is in a second operating mode; the second switch S2 is turned on when the power amplifier 20 is in the second operating mode and turned off when the power amplifier 20 is in the first operating mode. The output power of the power amplifier 20 in the first operating mode is greater than the output power in the second operating mode.

[0157] In the RF front-end module 100 provided in this embodiment, two independent power modules (i.e., the first power module 30 and the second power module 40) and two switches (i.e., the first switch S1 and the second switch S2) are provided. The two power modules output different supply voltages, and the two switches and the two power modules are connected to each other in a one-to-one correspondence.

[0158] The first operating mode corresponds to the high-power mode of power amplifier 20, and the second operating mode corresponds to the low-power mode of power amplifier 20. Specifically, the power amplifier 20 requires different supply voltages in different operating modes. Therefore, when it is necessary to switch the operating mode of power amplifier 20, by adjusting the operating states of the two switches, supply voltages of different amplitudes can be output to the power supply terminal 205 of power amplifier 20, thereby achieving rapid switching of operating modes. Specifically, the time required to adjust the operating states of the two switches is usually less than or equal to 5 microseconds, which can significantly improve the switching efficiency of the power amplifier 20's operating modes.

[0159] This application also provides an embodiment of a radio frequency front-end module 100, please refer to... Figure 12 The RF front-end module 100 is provided with a power supply port 102 for inputting power supply voltage. The RF front-end module 100 may include a low-noise amplifier 90, a first power supply module 30, a second power supply module 40, and a switching module 50. The low-noise amplifier 90 is provided with a power supply terminal 905. Specifically, the low-noise amplifier 90 may adopt a single-ended architecture, a differential architecture, a common-source architecture, a cascode architecture, etc., and this embodiment does not limit this.

[0160] In this embodiment, a first power supply module 30 is connected between power supply port 102 and power supply terminal 905 of low-noise amplifier 90, and is used to convert the power supply voltage into a first power supply voltage. A second power supply module 40 is connected between power supply port 102 and power supply terminal 905 of low-noise amplifier 90, and is used to convert the power supply voltage into a second power supply voltage. The amplitude of the second power supply voltage is smaller than the amplitude of the first power supply voltage.

[0161] In this embodiment, the switch module 50 may include a first switch S1 connected to the first power module 30 and a second switch S2 connected to the second power module 40; wherein, the first switch S1 is turned on when the low-noise amplifier 90 is in a first operating mode and turned off when the low-noise amplifier 90 is in a second operating mode; the second switch S2 is turned on when the low-noise amplifier 90 is in the second operating mode and turned off when the low-noise amplifier 90 is in the first operating mode. The operating current of the low-noise amplifier 90 in the first operating mode is greater than the operating current in the second operating mode.

[0162] In the RF front-end module 100 provided in this embodiment, two independent power modules (i.e., the first power module 30 and the second power module 40) and two switches (i.e., the first switch S1 and the second switch S2) are provided. The two power modules output different supply voltages, and the two switches and the two power modules are connected to each other in a one-to-one correspondence.

[0163] The first operating mode corresponds to either the high linearity mode or the high gain mode of the low-noise amplifier 90, while the second operating mode corresponds to the low-power mode of the low-noise amplifier 90. Specifically, the supply voltage required by the low-noise amplifier 90 differs depending on the operating mode. Therefore, when switching the operating mode of the low-noise amplifier 90 is required, adjusting the operating states of the two switches allows for the output of supply voltages with different amplitudes to the power supply terminal 905 of the low-noise amplifier 90, achieving rapid switching of operating modes. Specifically, the time required to adjust the operating states of the two switches is typically less than or equal to 5 microseconds, which significantly improves the switching efficiency of the low-noise amplifier 90's operating modes.

[0164] Specifically, the details and implementation methods of the features of the first power module 30, the second power module 40, and the switch module 50 can be found in the detailed descriptions in the embodiments above, and will not be repeated here. Where there is no conflict, other technical features and related technical solutions of the RF front-end module 100 in the embodiments above can be incorporated into this embodiment; however, to save space, they will not be elaborated upon here.

[0165] Please see Figure 13 This application also provides an electronic device 200, which can be a 4G or 5G communication device such as a smartphone, tablet, or smartwatch. Specifically, the electronic device 200 may include the radio frequency front-end module 100 in the above embodiments to realize the reception and transmission of radio frequency signals.

[0166] Furthermore, with the development of 5G technology, the requirements for the performance of radio frequency front-end modules are becoming increasingly stringent. The technical solution of this application can be applied to 5G radio frequency front-end modules to improve the communication performance of 5G communication equipment.

[0167] In this application specification, certain terms are used to refer to specific components. Those skilled in the art will understand that hardware manufacturers may use different names to refer to the same component. The specification and claims do not distinguish components based on differences in name, but rather on differences in function. The term "comprising" throughout the specification and claims is an open-ended term and should be interpreted as "including but not limited to"; "generally" means that those skilled in the art can solve the technical problem within a certain margin of error and basically achieve the technical effect.

[0168] In the description of this application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right", "inside", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the purpose of simplifying the description of this application and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application.

[0169] In this application, unless otherwise expressly specified or limited, the terms "installation," "connection," "linking," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or merely surface contact. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0170] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., refer to specific features, structures, materials, or characteristics described in connection with that embodiment or example, which are included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0171] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0172] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.

Claims

1. A radio frequency front-end module, characterized in that, It is equipped with a power supply port for inputting power supply voltage; The radio frequency front-end module includes: Power amplifier, equipped with a power supply terminal; A first power supply module is connected between the power supply port and the power supply terminal of the power amplifier, and is used to convert the power supply voltage into a first power supply voltage. A second power supply module, connected between the power supply port and the power supply terminal of the power amplifier, is used to convert the power supply voltage into a second power supply voltage, the amplitude of which is smaller than the amplitude of the first power supply voltage; and The switching module includes a first switch connected to the first power module and a second switch connected to the second power module; wherein the first switch is turned on when the power amplifier is in a first operating mode and turned off when the power amplifier is in a second operating mode; the second switch is turned on when the power amplifier is in the second operating mode and turned off when the power amplifier is in the first operating mode. The power amplifier has a higher output power in the first operating mode than in the second operating mode.

2. The radio frequency front-end module according to claim 1, characterized in that, The first switch is connected between the output terminal of the first power module and the power supply terminal of the power amplifier, or the first switch is connected between the power supply port and the input terminal of the first power module. The second switch is connected between the output terminal of the second power module and the power supply terminal of the power amplifier, or the second switch is connected between the power supply port and the input terminal of the second power module.

3. The radio frequency front-end module according to claim 1, characterized in that, The radio frequency front-end module also includes a bandgap reference module and a clock module. The bandgap reference module is used to generate a bandgap reference voltage, and the clock module is used to generate a clock signal. Wherein, the first power module and the second power module are respectively connected to the bandgap reference module; or / and, the first power module and the second power module are respectively connected to the clock module.

4. The radio frequency front-end module according to claim 1, characterized in that, The RF front-end module further includes multiple bandgap reference modules, which are used to generate bandgap reference voltages; wherein the first power module and the second power module are respectively connected to different bandgap reference modules; or / and, The radio frequency front-end module also includes multiple clock modules, which are used to generate clock signals; wherein the first power module and the second power module are respectively connected to different clock modules.

5. The radio frequency front-end module according to claim 1, characterized in that, The first power module includes any one of the following: a DC-DC buck converter circuit, a DC-DC boost converter circuit, a DC-DC buck-boost chopper circuit, an envelope tracking power supply circuit, and a low-dropout linear regulator; or / and, The second power module includes any one of the following: a DC-DC buck converter circuit, a DC-DC boost converter circuit, a DC-DC buck-boost chopper circuit, an envelope tracking power supply circuit, and a low dropout linear regulator.

6. The radio frequency front-end module according to claim 1, characterized in that, The first power supply module includes a pulse width modulation (PWM) DC-DC buck converter circuit, and the second power supply module includes a pulse frequency modulation (PWM) DC-DC buck converter circuit; or, The first power module and the second power module each include a pulse width modulation type DC-DC buck converter circuit; or, The first power module and the second power module each include a pulse frequency modulation type DC-DC buck converter circuit.

7. The radio frequency front-end module according to claim 1, characterized in that, The first power module and the second power module each include a pulse width modulation (PWM) DC-DC buck converter circuit; wherein the first power module and the second power module use the same ramp signal, but use different reference voltages; or, The first power module and the second power module each include a pulse frequency modulation type DC-DC buck converter circuit; wherein the reference voltages used by the first power module and the second power module are different.

8. The radio frequency front-end module according to claim 1, characterized in that, The first power module includes a first step-down unit, a first control unit, and a first feedback unit; wherein, the first step-down unit is connected between the power supply port and the power supply terminal of the power amplifier, and is used to convert the power supply voltage into a first power supply voltage that is lower than the power supply voltage; The first feedback unit is connected between the output terminal of the first buck unit and the first control unit, and is used to output a pulse width modulation signal to the first control unit; the first feedback unit is also used to sample the output voltage of the first buck unit to obtain a first sample voltage, and adjust the duty cycle of the pulse width modulation signal according to the difference between the first reference voltage and the first sample voltage; The first control unit is connected to the first buck unit and is used to adjust the output voltage of the first buck unit according to the pulse width modulation signal, so as to reduce the difference between the output voltage of the first buck unit and the target value of the first supply voltage.

9. The radio frequency front-end module according to claim 8, characterized in that, The first feedback unit includes a first voltage divider subunit, a differential amplifier, and a first comparator; One end of the first voltage divider subunit is connected to the output terminal of the first step-down unit, and the other end is grounded; the first voltage divider subunit is provided with a first voltage divider node, and the voltage of the first voltage divider node is the first sampling voltage; The first input terminal of the differential amplifier is connected to the first voltage divider node, the second input terminal of the differential amplifier is used to input the first reference voltage, the output terminal of the differential amplifier is connected to the first input terminal of the first comparator, and the output terminal of the differential amplifier is also connected to the first input terminal of the differential amplifier through a compensation network. The differential amplifier is used to convert the difference between the first reference voltage and the first sampling voltage into a control voltage. The second input terminal of the first comparator is used to input a ramp signal with a fixed frequency. The output terminal of the first comparator is connected to the first control unit and is used to compare the control voltage with the ramp signal and output the comparison result, which is the pulse width modulation signal.

10. The radio frequency front-end module according to claim 9, characterized in that, The first voltage divider subunit includes a first voltage divider resistor and a second voltage divider resistor connected in series, and the connection node between the first voltage divider resistor and the second voltage divider resistor is the first voltage divider node; The resistance value of at least one of the first voltage divider resistor and the second voltage divider resistor can be adjusted.

11. The radio frequency front-end module according to claim 9, characterized in that, The compensation network includes a first resistor and a first capacitor, which are connected in series between the output terminal and the first input terminal of the differential amplifier; or... The compensation network includes a first resistor and a first capacitor, which are connected in parallel between the output and the first input of the differential amplifier; or... The compensation network includes a first capacitor connected between the output and the first input of the differential amplifier.

12. The radio frequency front-end module according to claim 8, characterized in that, The first step-down unit includes a first switching transistor, a second switching transistor, a first inductor, a second capacitor, and a second resistor; The first terminal of the first switching transistor is connected to the input terminal of the first buck unit, and the second terminal of the first switching transistor is connected to the output terminal of the first buck unit through the first inductor. The first terminal of the second switching transistor is connected to the second terminal of the first switching transistor, and the second terminal of the second switching transistor is grounded; one terminal of the second capacitor is connected to the output terminal of the first step-down unit, and the other terminal of the second capacitor is grounded; the second resistor and the second capacitor are connected in parallel; The first control unit is connected to the control terminal of the first switch and the control terminal of the second switch, respectively.

13. The radio frequency front-end module according to claim 1, characterized in that, The second power module includes a second step-down unit, a second control unit, and a second feedback unit; wherein the second step-down unit is connected between the power supply port and the power supply terminal of the power amplifier, and is used to convert the power supply voltage into a second power supply voltage that is lower than the power supply voltage; The second feedback unit is connected between the output terminal of the second buck unit and the second control unit, and is used to output a pulse frequency modulation signal to the second control unit; the second feedback unit is also used to sample the output voltage of the second buck unit to obtain a second sampling voltage, and adjust the duty cycle of the pulse frequency modulation signal according to the relationship between the second reference voltage and the second sampling voltage; The second control unit is connected to the second buck unit and is used to adjust the output voltage of the second buck unit according to the pulse frequency modulation signal, so as to reduce the difference between the output voltage of the second buck unit and the target value of the second power supply voltage.

14. The radio frequency front-end module according to claim 13, characterized in that, The second feedback unit includes a second voltage divider subunit, a second comparator, and a frequency modulation subunit; One end of the second voltage divider subunit is connected to the output terminal of the second step-down unit, and the other end is grounded; the second voltage divider subunit is provided with a second voltage divider node, and the voltage of the second voltage divider node is the second sampling voltage; The first input terminal of the second comparator is connected to the second voltage divider node, the second input terminal of the second comparator is used to input the second reference voltage, the output terminal of the second comparator is connected to the input terminal of the frequency modulation subunit, the second comparator is used to compare the second reference voltage with the second sampled voltage, and output a comparison result to characterize the magnitude relationship between the second sampled voltage and the second reference voltage; The output of the frequency modulation subunit is connected to the second buck unit, and is used to convert the comparison result output by the second comparator into the pulse frequency modulation signal.

15. The radio frequency front-end module according to claim 14, characterized in that, The second voltage divider subunit includes a third voltage divider resistor and a fourth voltage divider resistor connected in series, and the connection node of the third voltage divider resistor and the fourth voltage divider resistor is the second voltage divider node; The resistance value of at least one of the third and fourth voltage divider resistors can be adjusted.

16. The radio frequency front-end module according to claim 13, characterized in that, The second step-down unit includes a third switch, a fourth switch, a second inductor, a third capacitor, and a third resistor; The first terminal of the third switching transistor is connected to the input terminal of the second step-down unit, and the second terminal of the third switching transistor is connected to the output terminal of the second step-down unit through the second inductor. The first terminal of the fourth switching transistor is connected to the second terminal of the third switching transistor, and the second terminal of the fourth switching transistor is grounded; one terminal of the third capacitor is connected to the output terminal of the second step-down unit, and the other terminal of the third capacitor is grounded; the third resistor and the third capacitor are connected in parallel. The second control unit is connected to the control terminals of the third and fourth switching transistors, respectively.

17. The radio frequency front-end module according to any one of claims 1 to 16, characterized in that, The radio frequency front-end module also includes a control module, which is connected to the control terminal of the first switch and the control terminal of the second switch respectively. The control module is configured to: adjust the operating state of the first switch and the operating state of the second switch in response to a mode switching command; wherein the mode switching command is used to indicate switching the operating mode of the power amplifier, the operating mode including the first operating mode and the second operating mode.

18. The radio frequency front-end module according to any one of claims 1 to 16, characterized in that, The radio frequency front-end module is used in an electronic device, which includes a control chip. The control terminal of the first switch is used to connect to the control chip, and the control terminal of the second switch is used to connect to the control chip.

19. The radio frequency front-end module according to any one of claims 1 to 16, characterized in that, The power amplifier is also provided with a signal input terminal, and the radio frequency front-end module also includes a current source module, a bias module and a control module. The current source module is used to output a reference current. The bias module is connected between the current source module and the signal input terminal of the power amplifier, and is used to generate a bias current according to the reference current; The control module is connected to the current source module and is configured to: output a control signal to the current source module based on the operating mode of the power amplifier, the control signal being used to adjust the amplitude of the reference current; wherein the amplitude of the reference current in the first operating mode is greater than the amplitude of the reference current in the second operating mode.

20. The radio frequency front-end module according to claim 19, characterized in that, The radio frequency front-end module is also provided with a ground port; the current source module includes an operational amplifier unit, a current mirror unit and a resistor unit, the current mirror unit includes a first current branch and a second current branch, the first end of the first current branch and the first end of the second current branch are respectively connected to the power supply port; The output terminal of the operational amplifier unit is connected to the control terminal of the first current branch and the control terminal of the second current branch, respectively. The first input terminal of the operational amplifier unit is used to input the third reference voltage. The second input terminal of the operational amplifier unit is connected to the second terminal of the first current branch. The second terminal of the second current branch is connected to the bias module. The resistor unit is connected between the second end of the first current branch and the ground port; wherein, the control signal output by the control module is used to adjust the operating parameters of the current source module, and the operating parameters of the current source module include at least one of the first size value of the transistor in the first current branch, the second size value of the transistor in the second current branch, and the equivalent resistance value of the resistor unit.

21. The radio frequency front-end module according to claim 20, characterized in that, The current source module further includes a switching unit, which includes a third switch. The first current branch includes at least two first transistors, and the third switch is connected to at least one of the first transistors. The first terminals of the at least two first transistors are all connected to the first terminal of the first current branch, the second terminal of the at least one first transistor is connected to the second terminal of the first current branch through the third switch, and the control terminals of the at least two first transistors are all connected to the control terminal of the first current branch. The control module is connected to the switching unit, and the control module is specifically configured to: control the third switch to be in the off state when the power amplifier is in the first operating mode; and control the third switch to be in the on state when the power amplifier is in the second operating mode.

22. The radio frequency front-end module according to claim 20, characterized in that, The current source module further includes a switching unit, which includes a fourth switch. The second current branch includes at least two second transistors, and the fourth switch is connected to at least one of the second transistors. The first terminals of the at least two second transistors are all connected to the first terminal of the second current branch, the second terminal of the at least one second transistor is connected to the second terminal of the second current branch through the fourth switch, and the control terminals of the at least two second transistors are all connected to the control terminal of the second current branch. The control module is connected to the switching unit, and the control module is specifically configured to: control the fourth switch to be in the on state when the power amplifier is in the first operating mode; and control the fourth switch to be in the off state when the power amplifier is in the second operating mode.

23. The radio frequency front-end module according to claim 20, characterized in that, The current source module further includes a switching unit, which includes at least one fifth switch, and the resistor unit includes multiple resistors. The second end of the first current branch has multiple parallel resistor branches between it and the grounding port. Each resistor branch includes at least one resistor. The at least one fifth switch is connected in series in at least one resistor branch. Alternatively, multiple resistors are connected in series between the second end of the first current branch and the grounding port. The at least one fifth switch is connected in parallel across the two ends of at least one resistor. The control module is connected to the switching unit, and the control module is specifically configured to: control the at least one fifth switch to be in the on state when the power amplifier is in the first operating mode; and control the at least one fifth switch to be in the off state when the power amplifier is in the second operating mode.

24. The radio frequency front-end module according to claim 19, characterized in that, The bias module includes a bias transistor and a plurality of clamping devices connected in series. The bias transistor is used to convert the reference current into a bias current input to the power amplifier. The control terminal of the bias transistor is connected to the current source module, the first terminal of the bias transistor is connected to the power supply port, and the second terminal of the bias transistor is connected to the signal input terminal. The positive terminal of the clamping device is connected to the control terminal of the bias transistor, and the negative terminal of the clamping device is connected to the ground port.

25. The radio frequency front-end module according to claim 24, characterized in that, The bias transistor is a bipolar transistor, with its control terminal being the base, its first terminal being the collector, and its second terminal being the emitter.

26. The radio frequency front-end module according to any one of claims 1 to 16, characterized in that, The radio frequency front-end module is provided with a grounding port; wherein, the power amplifier includes a power amplification unit, a first grounding resistor, a second grounding resistor and a switching switch, and the power amplification unit is connected to the power supply terminal of the power amplifier; The first grounding resistor is connected between the grounding terminal of the power amplifier unit and the grounding port, and the second grounding resistor is connected in series with the switching switch between the grounding terminal of the power amplifier unit and the grounding port. The switching switch is turned on when the power amplifier is in the first operating mode and turned off when the power amplifier is in the second operating mode.

27. The radio frequency front-end module according to claim 26, characterized in that, The resistance value of the first grounding resistor is greater than the resistance value of the second grounding resistor.

28. A radio frequency front-end module, characterized in that, It is equipped with a power supply port for inputting power supply voltage; The radio frequency front-end module includes: Low-noise amplifier with a power supply terminal; A first power supply module is connected between the power supply port and the power supply terminal of the low-noise amplifier, and is used to convert the power supply voltage into a first power supply voltage. A second power supply module, connected between the power supply port and the power supply terminal of the low-noise amplifier, is used to convert the power supply voltage into a second power supply voltage, the amplitude of which is smaller than the amplitude of the first power supply voltage; and A switching module includes a first switch connected to the first power module and a second switch connected to the second power module; wherein the first switch is turned on when the low noise amplifier is in a first operating mode and turned off when the low noise amplifier is in a second operating mode; the second switch is turned on when the low noise amplifier is in the second operating mode and turned off when the low noise amplifier is in the first operating mode. The low-noise amplifier operates at a higher current in the first operating mode than it operates in the second operating mode.

29. An electronic device, characterized in that, include: The radio frequency front-end module as described in any one of claims 1 to 28.

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