Image sensor package

Abstract

An image sensor package may include an optically transmissive cover including a first layer coupled to a largest planar surface of the optically transmissive cover, a second layer coupled to the largest planar surface of the optically transmissive cover, and a third layer coupled to the largest planar surface of the optically transmissive cover. And a plurality of nanostructures in the first layer positioned adjacent to the perimeter of the optically transmissive cover. The plurality of nanostructures may form a substantially solar-blind ultraviolet light filter.

Description

Technical Field

[0001] This document covers all aspects of image sensor packaging. Background Technology

[0002] Semiconductor packages have been developed to protect semiconductor dies from shocks and vibrations. Various semiconductor packages also help facilitate electrical connections between pads on the semiconductor die and various traces included in a circuit board or motherboard to which the semiconductor package is attached. Some semiconductor packages are also configured to provide moisture protection for the semiconductor die. Image sensor packages also protect the die surface from particles or other contaminants that could impair imaging performance. Summary of the Invention

[0003] An image sensor package may include an optical transmission cover comprising: a first layer coupled to a maximally flat surface of the optical transmission cover; and a plurality of nanostructures located within the first layer, positioned adjacent to the periphery of the optical transmission cover. The plurality of nanostructures may form a substantially solar-blind ultraviolet light filter.

[0004] Specific implementations of the image sensor package may include one, all, or any of the following:

[0005] The spacing between multiple nanostructures and the size of each nanostructure in the multiple nanostructures can be set to essentially prevent visible light from passing through the multiple nanostructures.

[0006] The spacing between multiple nanostructures and the size of each nanostructure in the multiple nanostructures can be set to essentially allow only ultraviolet light to pass through the multiple nanostructures.

[0007] Multiple nanostructures may include a mesh containing aluminum, wherein the pores in the mesh are filled with silicon dioxide.

[0008] The spacing of the aluminum mesh can be 180 nanometers.

[0009] The hole can be square, with each side measuring 67.5 nanometers in length.

[0010] The aluminum mesh can be 150 nanometers thick.

[0011] The width of the multiple nanostructures surrounding the optical transmission cover can range from 200 micrometers to 500 micrometers.

[0012] The package may include an image sensor semiconductor die coupled to an optical transmission cover, wherein the largest flat surface faces the image sensor semiconductor die.

[0013] Specific implementations of the image sensor package may include an optical transmission cover comprising: a recess extending around the periphery of the largest flat surface of the optical transmission cover; and a plurality of nanostructures disposed within the recess. The plurality of nanostructures may form a substantially solar-blind ultraviolet light filter.

[0014] The spacing between multiple nanostructures and the size of each nanostructure in the multiple nanostructures can be set to essentially prevent visible light from passing through the multiple nanostructures.

[0015] The spacing between multiple nanostructures and the size of each nanostructure in the multiple nanostructures can be set to essentially allow only ultraviolet light to pass through the multiple nanostructures.

[0016] The width of the multiple nanostructures in the recess can be between 200 micrometers and 500 micrometers.

[0017] The package may include an image sensor semiconductor die coupled to an optical transmission cover, wherein the largest flat surface faces the image sensor semiconductor die.

[0018] Specific implementations of the image sensor package may include an optical transmission cover comprising multiple nanostructures embedded in the material of the optical transmission cover. These multiple nanostructures can form a substantially solar-blind ultraviolet light filter.

[0019] The spacing between multiple nanostructures and the size of each nanostructure in the multiple nanostructures can be set to essentially prevent visible light from passing through the multiple nanostructures.

[0020] The spacing between multiple nanostructures and the size of each nanostructure in the multiple nanostructures can be set to essentially allow only ultraviolet light to pass through the multiple nanostructures.

[0021] The width of the multiple nanostructures in the material of the optical transmission cover can be between 200 micrometers and 500 micrometers.

[0022] The package may include an image sensor semiconductor die coupled to an optical transmission cover, wherein the largest flat surface faces the image sensor semiconductor die.

[0023] Each of the multiple nanostructures can extend into the thickness of the optical transmission cap.

[0024] The above and other aspects, features and advantages will become apparent to those skilled in the art from the specific embodiments, the accompanying drawings and the claims. Attached Figure Description

[0025] Specific embodiments will be described below in conjunction with the accompanying drawings, in which similar reference numerals denote similar elements, and:

[0026] Figure 1 This is a top view of a specific implementation of the image sensor package;

[0027] Figure 2 It was cut along section line AA. Figure 1 A detailed cross-sectional view of a specific implementation of an image sensor package;

[0028] Figure 3 This is a top view of another specific embodiment of the image sensor package;

[0029] Figure 4 It was cut along section line BB. Figure 3 A detailed cross-sectional view of a specific implementation of an image sensor package;

[0030] Figure 5 This is a cross-sectional view of a specific implementation of another image sensor package;

[0031] Figure 6 This is a top view of a specific implementation of the image sensor package;

[0032] Figure 7 This is a top view of a specific implementation of the image sensor package;

[0033] Figure 8 It is a cross-sectional view of a specific embodiment of an optical transmission cover on which a silicon dioxide layer is formed;

[0034] Figure 9 It occurs after patterning and etching operations. Figure 8 A cross-sectional view of the optical transmission cover;

[0035] Figure 10 This occurs after aluminum deposition and etching, as well as a simplification process. Figure 9 A cross-sectional view of the optical transmission cover;

[0036] Figure 11 It is a cross-sectional view of a specific embodiment of an optical transmission cover on which an aluminum layer is formed;

[0037] Figure 12 It occurs after patterning and etching operations. Figure 11 A cross-sectional view of the optical transmission cover;

[0038] Figure 13 It occurs after the silica deposition and simplification processes. Figure 12 A cross-sectional view of the optical transmission cover;

[0039] Figure 14This is a cross-sectional view of a specific implementation of the optical transmission cover after the recesses have been etched on it;

[0040] Figure 15 It is after aluminum is deposited on it. Figure 14 A cross-sectional view of the optical transmission cover;

[0041] Figure 16 It occurs after patterning, etching, and unification operations. Figure 15 A cross-sectional view of the optical transmission cover;

[0042] Figure 17 This is a cross-sectional view of the optical transmission cover after patterning and etching operations;

[0043] Figure 18 It is after aluminum is deposited on it. Figure 17 A cross-sectional view of the optical transmission cover; and

[0044] Figure 19 It occurs after etching and unification operations. Figure 18 A cross-sectional view of the optical transmission cover. Detailed Implementation

[0045] This disclosure, its aspects, and specific embodiments are not limited to the specific components, assembly steps, or method elements disclosed herein. Many other components, assembly steps, and / or method elements known in the art that conform to the intended image sensor package will be readily apparent and can be used with specific embodiments of this disclosure. Therefore, for example, although specific embodiments are disclosed herein, such embodiments and implementation components may include any shape, size, style, type, model, version, measure, concentration, material, quantity, method element, step, etc., known in the art for such image sensor packages and implementation components and methods that conform to the intended operation and methods.

[0046] refer to Figure 1 The figure illustrates a specific implementation of the image sensor package 2. As illustrated, the package 2 includes an image sensor die 4 to which an optical transmission cover 6 has been coupled using adhesive. The image sensor die 4 includes an active region 8 comprising multiple pixels and, in various embodiments, may include a color filter array and various microlenses formed thereon. To allow for the formation of an electrical connection between the image sensor die 4 and the image sensor package 2, a plurality of pads 10 are included at various locations along the periphery 12 of the image sensor die 4. Figure 2This is a detailed cross-sectional view of the image sensor package 2 along section line AA. The relationship between the image sensor die 4, the optical transmission cover 6, the adhesive 14, the pads 10, and the substrate 16 of the package is illustrated in this figure. Here, bonding wires 18 are used to form the electrical connection between the pads 10 and the corresponding pads 20 on the substrate 16. Molding compound has been applied to cover the wire bonding and the joint between the image sensor die 4 and the optical transmission cover 6.

[0047] like Figure 2 As illustrated, the active region 8 is exposed to various light sources reflected from the structure of the package, including light reflected from the vertical edge of the optical transmission cover 6, light reflected from the adhesive 14, light reflected from the edge of the adhesive 14, and light reflected from the pads 10 or wire bonds 18. Because the optical transmission cover 6 freely transmits reflected light from these various structures of the package during operation, this reflected light appears as glare in the image generated by the image sensor.

[0048] Figure 3 A top view of another specific embodiment 22 of an image sensor package is illustrated, which similarly includes an image sensor die 24 coupled to an optical transmission cover 26 via adhesive. Pads 28 surround the periphery of the image sensor die 24, which includes an active region 30. (See section BB for details.) Figure 4 As can be seen in the detailed cross-sectional view, the perimeter of the optical transmission cover 26 is greater than the perimeter of the image sensor die 24. Furthermore, the pads 28, together with one end of the bonding leads 34, are located within the material of the adhesive 32. Therefore, this type of image sensor package is referred to as a wire-in-dam image sensor package. Between the adhesive 32 and the image sensor die 24 is a black material layer 36, referred to as "black under the glass," which substantially absorbs all wavelengths of light encountering it. The width of the black material layer 36 is set to provide a consistent gap around the perimeter of the active region 30, while covering the remaining surface of the optical transmission cover 26 up to the edge of the cover.

[0049] This configuration essentially reduces the likelihood of light reflected from the adhesive 32, the vertical edge of the optical transmission cap 26, the pads 28, or the bonding leads 34 encountering the active region 30. The black material layer 36 is positioned to make such reflections unlikely to be sufficient to penetrate the active region 30, making glare unlikely to be observed during operation. A problem arises with the adhesive 32 in this particular image sensor package implementation 26. Because this design still employs a lead-in-dam structure, the adhesive 32 must be applied to the pads and bonding leads while still uncured and subsequently cured to form a bond of the desired strength between the optical transmission cap 26 and the image sensor die 24. If curing is performed using only thermal energy, the black material layer 36 does not interfere with the curing process. However, when using light with wavelengths in the ultraviolet portion of the electromagnetic spectrum to provide initial or complete curing of the adhesive material, the black material layer 36 makes it difficult to achieve the desired curing. This is because ultraviolet light has difficulty reaching the adhesive material and can achieve different amounts of curing at different bonding pad locations. As a result, corrosion of wire bonds and bonded leads has been observed due to ion migration in the uncured material. Similarly, in various image sensor package implementations, cracking / delamination of the bond between the image sensor die and the optical transmission cover 26 has been observed.

[0050] This document discloses the use of nanostructures instead of a black material layer in the design of a lead-in dam image sensor package. These nanostructures contain dimensions in the nanometer range (hence the name) and, due to their size, essentially block wavelengths of light except those wavelengths small enough to pass through. Therefore, the specific structure disclosed herein can act as a solar-blind ultraviolet filter, meaning that all wavelengths of sunlight from Earth (except those in the ultraviolet range) are absorbed by the nanostructure. Thus, only ultraviolet light is allowed to pass through the filter, and solar radiation is completely or substantially completely absorbed.

[0051] refer to Figure 5 An embodiment of an image sensor package 38 is illustrated, which includes nanostructures 40 formed in the material of its optical transmission cover 42. Similar to previous embodiments, the optical transmission cover 42 is attached to the image sensor die 44 using an adhesive 46, and the package is similar to... Figure 4The illustrated embodiment is a wire-in-dam system. A nanostructure 40 is disposed around the periphery 48 of an optical transmission cover 42, and in this embodiment, extends to the edge of the optical transmission cover 42. The nanostructure 40 is dimensionally configured to have a size and structural relationship that would produce a structure forming a solar-blind ultraviolet filter. The specific general shape of the nanostructure is a grid of intersecting lines with nanoscale features, forming a set of openings therethrough. The size of the openings in the grid is used to prevent wavelengths longer than ultraviolet light from passing through the openings, thus forming an ultraviolet-only filter. Examples of three-dimensional grid nanostructures that can be employed in various embodiments can be found in the paper by Li et al. entitled “Solar-blind deep-UV band-bass filter (250-350nm) consistent of a metal nano-grid fabricated by nanoimprint lithography,” OpticsExpress, Vol. 18, No. 2, pp. 931-937 (January 6, 2010), the entire contents of which are incorporated herein by reference.

[0052] like Figure 4 As illustrated, the size of the optical transmission cap 42 is set to be the same as the size of the image sensor die 44. However, in other embodiments, the optical transmission cap 42 may be larger or smaller than the image sensor die 44. Because ultraviolet light can pass freely through the nanostructure 40, the problem of sag of the black material layer is completely avoided, as a uniform amount of ultraviolet light can penetrate the adhesive 46 and induce the desired curing reaction. However, because in this embodiment, the nanostructure 40 prevents any light wavelength other than ultraviolet light and higher energy (or lower wavelengths) from being transmitted through it, the ability of the pixels in the active region 49 to detect visible light of other wavelengths reflected from the adhesive, the edges of the optical transmission cap, the pads, or the bonding wires is significantly reduced. Therefore, the optical effect of the nanostructure is similar to that of the black material layer in preventing glare in the image generated by the pixels. However, if the pixels are designed to detect ultraviolet light, this result will not apply, as the nanostructure will have little effect on reducing glare in this case. However, for other image sensor die types designed to detect infrared or visible light, the nanostructure will prevent light reflection into the pixel array of those wavelengths.

[0053] For illustrative purposes, Figure 5 The nanostructures shown are not illustrated to scale because they are in Figure 5 The structures illustrated would be indistinguishable at scale. Figure 6The image sensor package 50 is illustrated in a top view, showing the positions of nanostructures 52 arranged around the periphery of an optically conductive glass layer. Here, for illustrative purposes, the nanostructures are represented using a dotted pattern that reflects their actual structure, which is indistinguishable at this scale. In this embodiment, the nanostructures 52 have a grid pattern structure. However, in some embodiments, random or semi-random patterns (such as dotted patterns) can be used for the nanostructures to prevent substantially all visible and infrared wavelengths from passing through, provided the spacing between individual nanostructures can be controlled. In various image sensor package embodiments, it is not necessary to prevent 100% of all visible and infrared wavelengths from passing through the nanostructures to achieve the desired glare reduction. In some embodiments, 99% prevention is sufficient. In others, 95% prevention is sufficient. In still others, 90% prevention is sufficient. In still others, 85% prevention is sufficient. In still others, 80% prevention is sufficient. Because of this ability to achieve desired glare reduction without 100% prevention, the need to make the nanostructure perfectly or even substantially perfectly uniform can be reduced. Therefore, dotted patterns or structures with different numbers / levels of defects can achieve these desired levels of prevention. This can be helpful in various specific implementations due to the difficulty of forming nanostructures and / or the cost involved in forming nanostructures with very low defect densities. These difficulties and cost issues arise from processing conditions (such as microcontamination problems caused by processing in Class 10,000 or Class 1,000 facilities instead of Class 1 cleanroom facilities) or the processing capabilities of the nanostructure forming equipment and / or processes utilized (e.g., less suitable for cost reduction).

[0054] Figure 7 This is a top view of another semiconductor package embodiment 54, in which the optical transmission cover 56 is larger than the image sensor die 58. The location of the nanostructure 60 is also illustrated relative to the pixel array 62, which completely covers all the bonding pads 64, thus helping to prevent glare and other reflections by acting as a solar-blind ultraviolet filter. Various configurations of various nanostructures on the optical transmission cover can be constructed using the principles disclosed in this document.

[0055] Various specific embodiments of semiconductor packages and their various methods of formation will then be discussed in this document. In some of these embodiments, the resulting structures are the same or similar, but in others, the resulting structures are different. However, all the different image sensor package structures can function / produce a substantially solar-blind ultraviolet light filter. Various methods of forming image sensor packages will then be discussed in this document. While the use of silicon dioxide as the material for the first layer is disclosed, other material types that meet the refractive index requirements of a particular image sensor design can be used. Furthermore, while the use of aluminum as the material for the nanostructure is disclosed in the following examples, a variety of other materials can be employed as non-limiting examples, including aluminum alloys, copper, copper alloys, silver, silver alloys, gold, gold alloys, carbon, tungsten, titanium, any combination thereof, or any other material capable of absorbing light radiation.

[0056] refer to Figure 8 This illustrates a specific embodiment of an optically transmissive panel 66 after a silicon dioxide layer 68 has been formed thereon. The silicon dioxide layer can be formed using any of a variety of methods, including, as a non-limiting example, chemical vapor deposition, sputtering, atomic layer deposition, wet oxide growth, or any other method for forming a silicon dioxide layer on the material of the optically transmissive panel. While the use of silicon dioxide is disclosed in this specific embodiment, other materials may potentially be used that will meet the refractive index requirements of a particular image sensor and the wavelength of the light involved and / or match the refractive index of the specific material of the optically transmissive panel itself. Because the material of the optically transmissive panel 66 is typically a glass type comprising all or most of silicon dioxide, adding an additional silicon dioxide layer may have a negligible effect on the overall refractive index of the optically transmissive panel 66.

[0057] Figure 9 This is a cross-sectional view of the optically transmissive panel 66 after a set of openings 70 corresponding to the dimensions of the final nanostructure have been patterned and etched into the silicon dioxide layer 68. The size and position of these openings 70 are set to form a negative image of the nanostructure to be formed therein. Although in Figure 9 The set of openings 70 is illustrated as extending through the entire thickness of the silicon dioxide layer 68, but this may not be the case in various specific implementations, where the openings may only extend partially into the thickness.

[0058] refer to Figure 10An optically transmissive panel 66 is illustrated after an aluminum layer is applied to a silicon dioxide layer 68, which fills the opening 70 and creates aluminum nanostructures 72 within the silicon dioxide layer 68. The aluminum layer can be formed using various methods, including sputtering, chemical vapor deposition, atomic layer deposition, or any other method of applying aluminum to the silicon dioxide layer as a non-limiting example. After the aluminum layer is applied, patterned layers can be formed at locations between the regions of the nanostructures, exposing them to an etching / removal process that removes the aluminum layer from the locations where the pixel array will be positioned and from the nanostructures 72, allowing ultraviolet light to pass through the nanostructures 72. In some embodiments, patterned layers may not be used, but simple blanket etching, chemical mechanical planarization, or polishing operations can be used to remove the remaining aluminum, leaving the nanostructures 72. After the etching / removal process, a single-unit process is then performed to separate the optically transmissive panel 66 into an optically transmissive cover 74. Figures 8 to 10 In the disclosed method implementation, the processing is exemplified at the panel level, but in other implementations, the processing operation may be performed only at the optical transmission cover level in various method implementations.

[0059] exist Figure 10 In the optical transmission cover embodiment 74 illustrated herein, the various nanostructures 72 extending into the silicon dioxide layer are no longer connected by the remaining aluminum initially formed on the silicon dioxide layer.

[0060] refer to Figure 11 This illustrates another specific embodiment of an optically transmissive panel 76 after an aluminum layer 78 has been formed thereon. The aluminum layer 78 can be formed using any of the methods disclosed in this document. After forming the aluminum layer 78, a patterned layer is formed on the aluminum layer 78, and then an etching process is used to etch away all of the aluminum layer 78 except for the nanostructures 80 surrounding the periphery of the optically transmissive cap included in the optically transmissive panel 76 (see [document name]). Figure 12 As a non-limiting example, the patterning of the patterned layer can be formed using photolithography, nanoimprint lithography, a spraying process for generating dithering patterns, a resist-back lithography process, or any other patterning process capable of generating nanoscale features of nanostructures 80.

[0061] refer to Figure 13 An example is shown of an optically transmissive panel after a silicon dioxide layer 82 has been formed on a nanostructure 80. In some implementations, a planarization operation may be performed to flatten the silicon dioxide layer 82 on the nanostructure 80. However, in other implementations, planarization may not be used, particularly when the nanostructure is only a few hundred nanometers thick / high. Figure 13 This illustrates how a simplification operation can be performed to separate the optical transmission panel into the optical transmission cover 84. This specific method implementation produces... Figure 10The optical transmission cover illustrated in the figure is very similar to the structured optical transmission cover 84.

[0062] Figure 14 An example is illustrated of another optically transmissive panel embodiment 86, which can be made of any material disclosed herein, after an etching process in which a patterned layer is formed thereon and recesses 88 are formed into the material of the optically transmissive panel 86. The etching process used can be any etching process compatible with the material of the optically transmissive panel, including dry etching or wet etching. Reference Figure 15 This illustrates an optical transmission panel 86 after an aluminum layer 90 has been deposited on the surface of the optical transmission panel 86 and into the recess 88. The aluminum layer 90 can be deposited using any deposition method disclosed herein.

[0063] After forming the aluminum layer 90, a patterned layer is formed on the aluminum layer. This patterned layer contains spacers that allow openings to be etched in the aluminum layer 90 within the recess 88 to form nanostructures 92 (see...). Figure 16 In some implementations, etching openings to form nanostructure 92 can result in the removal of the remaining aluminum layer. However, in other implementations, a separate etching process can be used to remove the remaining aluminum layer on the region of the optically transmissive panel 86 where the pixel array will be positioned. In such implementations, a separate patterning layer can be formed on nanostructure 92 to protect the nanostructure during the aluminum etching process, followed by the removal of the patterned layer. In some implementations, a silicon dioxide layer can be formed on both the nanostructure and the optically transmissive panel 86 to provide a covering on nanostructure 92 and / or stabilize it during subsequent processing. Figure 16 As illustrated, a single-transmission process is then performed to separate the optical transmission panel into the optical transmission cover 94.

[0064] refer to Figure 17 An example is illustrated of an optically transmissive panel 96 after a patterned layer is formed thereon, the patterned layer then used during etching to create multiple sets of openings 98 in the material of the optically transmissive panel, these openings forming a negative pattern of a set of nanostructures. Figure 17 In the process, after etching multiple sets of openings 98, the patterning layer has been removed. The etching of the multiple sets of openings 98 can be performed using any etching method compatible with the material of the optical transmission panel 96. Figure 18 An optically transmissive panel 96 is illustrated after an aluminum layer 100 is deposited into multiple sets of openings 98 to form a nanostructure 102. The aluminum layer 100 can be formed using any of the aluminum deposition methods disclosed herein.

[0065] After depositing the aluminum layer 100, the material present in the area of ​​the optical transmission panel 96 that will eventually cover the pixel array of the image sensor die is then removed (see [link]). Figure 19In some embodiments, a blanket etching process (wet or dry) may be used. In other embodiments, a chemical mechanical planarization process may be used. In still other embodiments, a grinding and / or finishing and / or polishing process may be used. In yet other embodiments, to maintain the structure of the nanostructure 102, an initial patterning process may be performed, which forms a patterned layer on the nanostructure before bulk etching of the remaining aluminum film, followed by removal of the patterned layer and etching of the aluminum film connecting the various nanostructures 102 together. The specific method may be determined by the thickness of the aluminum layer 100 used.

[0066] Figure 19 The method of performing a homogenization process after etching the aluminum layer is also illustrated to form the optical transmission cover 104. Since the nanostructure 102 is formed directly into the material of the optical transmission cover 104 itself, the resulting structure of the optical transmission cover 104 does not include an additional silicon dioxide layer.

[0067] Various nanostructure types and sizes can be employed in various embodiments, including any nanostructure types and sizes disclosed in this document. In a particular embodiment, the nanostructure is structured in the form of a mesh. In a particular embodiment, the mesh has a spacing of approximately 180 nanometers and includes holes / openings passing through it. The holes are square with a side length of approximately 67.5 nanometers. The specific dimensions of the nanostructure are a function of the wavelength of light that the nanostructure is intended to pass through and exclude.

[0068] In certain embodiments, the width of the nanostructures surrounding the periphery of the optical transmission cover can be between about 200 micrometers and about 500 micrometers. In various embodiments, the nanostructures form a continuous band of this width around the periphery of the optical transmission cover. In some embodiments, where the nanostructures are not required, one or more gaps may be included in the band. In other embodiments, the width of the nanostructures may vary on one, two, three, or all four sides of the optical transmission cover.

[0069] Where specific embodiments of the image sensor package and implementation components, sub-components, methods and sub-methods are mentioned in the above description, it should be apparent that various modifications can be made without departing from the spirit of the invention, and that these embodiments, implementation components, sub-components, methods and sub-methods can be applied to other image sensor packages.

Claims

1. An image sensor package, characterized in that, The image sensor package includes: Optical transmission cover, the optical transmission cover comprising: A first layer, the first layer being coupled to the largest flat surface of the optical transmission cover; and Multiple nanostructures are located in the first layer, adjacent to the periphery of the optical transmission cover; The multiple nanostructures form a essentially sun-blind ultraviolet light filter.

2. The encapsulation according to claim 1, wherein the spacing between the plurality of nanostructures and the size of each of the plurality of nanostructures are configured to substantially prevent visible light from passing through the plurality of nanostructures.

3. The encapsulation according to claim 1, wherein the spacing between the plurality of nanostructures and the size of each of the plurality of nanostructures are configured to allow ultraviolet light to pass through the plurality of nanostructures substantially only.

4. The encapsulation of claim 1, wherein the plurality of nanostructures comprises a mesh, the mesh comprising aluminum, and wherein the pores in the mesh are filled with silicon dioxide.

5. The package according to claim 4, wherein the spacing of the aluminum mesh is 180 nanometers.

6. The package according to claim 4, wherein the hole is square and each side is 67.5 nanometers in length.

7. The package according to claim 4, wherein the aluminum mesh is 150 nanometers thick.

8. The package of claim 1, wherein the width of the plurality of nanostructures adjacent to the periphery of the optical transmission cover is between 200 micrometers and 500 micrometers.

9. The package according to claim 1, wherein, The package also includes an image sensor semiconductor die coupled to the optical transmission cover, wherein the largest flat surface faces the image sensor semiconductor die.

10. An image sensor package, characterized in that, The image sensor package includes: Optical transmission cover, the optical transmission cover comprising: A recess extending around the periphery of the largest flat surface of the optical transmission cover; and Multiple nanostructures are located within the recess; The multiple nanostructures form a essentially sun-blind ultraviolet light filter.

11. The encapsulation of claim 10, wherein the spacing between the plurality of nanostructures and the size of each of the plurality of nanostructures are configured to substantially prevent visible light from passing through the plurality of nanostructures.

12. The package of claim 10, wherein the spacing between the plurality of nanostructures and the size of each of the plurality of nanostructures are configured to allow ultraviolet light to pass through the plurality of nanostructures substantially only.

13. The package of claim 10, wherein the width of the plurality of nanostructures in the recess is between 200 micrometers and 500 micrometers.

14. The package of claim 10, further comprising an image sensor semiconductor die coupled to the optical transmission cap, wherein the largest flat surface faces the image sensor semiconductor die.

15. An image sensor package, characterized in that, The image sensor package includes: An optical transmission cover, the optical transmission cover comprising multiple nanostructures, the multiple nanostructures being disposed within the material of the optical transmission cover; The multiple nanostructures form a essentially sun-blind ultraviolet light filter.

16. The package of claim 15, wherein the spacing between the plurality of nanostructures and the size of each of the plurality of nanostructures are configured to substantially prevent visible light from passing through the plurality of nanostructures.

17. The package of claim 15, wherein the spacing between the plurality of nanostructures and the size of each of the plurality of nanostructures are configured to allow ultraviolet light to pass through the plurality of nanostructures substantially only.

18. The package of claim 15, wherein the width of the plurality of nanostructures in the material of the optical transmission cover is between 200 micrometers and 500 micrometers.

19. The package according to claim 15, wherein, The package also includes an image sensor semiconductor die coupled to the optical transmission cover, wherein the largest flat surface faces the image sensor semiconductor die.

20. The package of claim 15, wherein each of the plurality of nanostructures extends into the thickness of the optical transmission cap.

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